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KUZUHARA Masaaki  葛原 正明

Researcher Number 20377469
Other IDs
  • ORCIDhttps://orcid.org/0000-0001-6833-1111
External Links
Affiliation (Current) 2025: 関西学院大学, 工学部, 研究員
Affiliation (based on the past Project Information) *help 2024: 関西学院大学, 工学部, 研究員
2023: 関西学院大学, 工学部, 教授
2021: 関西学院大学, 工学部, 教授
2020 – 2021: 関西学院大学, 理工学部, 教授
2016 – 2019: 福井大学, 学術研究院工学系部門, 教授 … More
2012 – 2015: 福井大学, 工学(系)研究科(研究院), 教授
2014: 福井大学, 大学院工学研究科, 教授
2011 – 2012: 福井大学, 工学研究科, 教授
2009 – 2010: 福井大学, 大学院・工学研究科, 教授
2006 – 2008: University of Fukui, Department of Electrical and Electronics Engineering, Professor, 工学研究科, 教授
2007: University of Fukui, Graduate Schcol of Engineering, Professor
2006: 福井大学, 大学院工学研究科, 教授
2005: 福井大学, 工学部, 教授 Less
Review Section/Research Field
Principal Investigator
Electron device/Electronic equipment / Basic Section 21060:Electron device and electronic equipment-related / Medium-sized Section 21:Electrical and electronic engineering and related fields
Except Principal Investigator
Basic Section 21060:Electron device and electronic equipment-related / Electron device/Electronic equipment / Electronic materials/Electric materials
Keywords
Principal Investigator
窒化物半導体 / HEMT / GaN / 耐圧 / トランジスタ / 高電子移動度トランジスタ / 破壊電界 / パワーデバイス / モンテカルロシミュレーション / ドレイン電流密度 … More / 二次元電子ガス / 電力増幅 / 高出力 / 電力利得 / 無線電力伝送 / 電力増幅器 / AlGaN/GaN / 準ミリ波 / 電子デバイス・機器 / 基板 / 漏れ電流 / 半絶縁性 / 抵抗率 / バッファ層 / 半絶縁性基板 / リーク電流 / 絶縁破壊 / on resistance / breakdown voltage / p-type semiconductor / field effect transistor / diode / p-n junction / nitride semiconductor / アニール / 正孔濃度 / 高耐圧 / pnダイオード / オン抵抗 / p形半導体 / 電界効果トランジスタ / ダイオード / pn接合 / ヘテロ接合 / ゲート電流 / MIS / 表面保護膜 / 電流コラプス / パッシベーション / ゲート絶縁膜 / MOSFET / 絶縁膜 / FET / MIS / 電子デバイス・集積回路 / 電子デバイス・電子機器 / 集積回路 / 電子デバイス … More
Except Principal Investigator
GaN / MIS / HEMT / AlGaN/GaN / AlGaN / Hi-K dielectric / Normally-off / AlGaN/GaN HEMT / semiconductor / power device / Gallium nitride / Mg doping / MOVPE / Insulated-Gate / MIS-HEMT / リセスゲート / エンハンスメントモード / ノーマリーオフ / ドライエッチング / 再成長 / 窒化ガリウム / Insulated Gate / normally-off operation / 酸素プラズマ処理 / 多重台形チャネル / 自己発熱 / パワーデバイス / 電流コラプス / 窒化物半導体 / AlGaN-GaN / Stability / Breakdown Voltage / Current Collapse / current collapse / Si substrate / two-dimensional electron gas / indium nitride (InN) / III比 / V / 残留キャリア濃度 / N面劣化 / twist / tilt / 電子移動度 / 抵抗率 / キャリア濃度 / CP_2Mg / Mgドーピング / Si基板 / 二次元電子ガス / InN / Hall effect measurement / mobility / sheet electron density / barrier height / heterostructure / A1N単結晶薄膜 / 固相C60薄膜 / AlN単結晶薄膜 / 電界効果トランジスタ / SiC基板 / 炭素系デバイス / グラフェン / 固相C_<60>薄膜 / 電気・電子材料(半導体、誘電体、磁性体、超誘電体、有機物、絶縁体、超伝導体など) Less
  • Research Projects

    (12 results)
  • Research Products

    (168 results)
  • Co-Researchers

    (10 People)
  •  Study on drain current conduction mechanism in high-Al content AlGaN/GaN HEMTsPrincipal Investigator

    • Principal Investigator
      葛原 正明
    • Project Period (FY)
      2024 – 2026
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      Kwansei Gakuin University
  •  Study on high-K dielectric/regrown nitride semiconductor interfaces for high efficiency and highly-safe transistors

    • Principal Investigator
      ASUBAR JOEL
    • Project Period (FY)
      2023 – 2025
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      University of Fukui
  •  Highly Stable Normally-off GaN-based transistors via Structures and Process

    • Principal Investigator
      Asubar Joel
    • Project Period (FY)
      2019 – 2021
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      University of Fukui
  •  Study on high-voltage and high-power nitrided-based transistor amplifiers operated at quasi-millimeter wave frequenciesPrincipal Investigator

    • Principal Investigator
      Kuzuhara Masaaki
    • Project Period (FY)
      2019 – 2021
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Review Section
      Medium-sized Section 21:Electrical and electronic engineering and related fields
    • Research Institution
      Kwansei Gakuin University
      University of Fukui
  •  Study on lateral breakdown field in GaN-based transistorsPrincipal Investigator

    • Principal Investigator
      Kuzuhara Masaaki
    • Project Period (FY)
      2016 – 2018
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      University of Fukui
  •  Improving the reliability of GaN HEMTs using MMC structures and free-standing GaN substrates

    • Principal Investigator
      Asubar Joel
    • Project Period (FY)
      2015 – 2017
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      University of Fukui
  •  Study on III-Nitride Based MIS-Transistors with Low-loss and High-breakdown voltage CharacteristicsPrincipal Investigator

    • Principal Investigator
      Kuzuhara Masaaki
    • Project Period (FY)
      2013 – 2015
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      University of Fukui
  •  Study on surface barrier height in nitride-based semiconductors

    • Principal Investigator
      TOKUDA Hirokuni
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      University of Fukui
  •  Study on High-Temperature and High-Frequency Electronic DevicesPrincipal Investigator

    • Principal Investigator
      KUZUHARA Masaaki
    • Project Period (FY)
      2010 – 2012
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      University of Fukui
  •  Basic Research for Carbon Electronics Devices using Solid C_<60> and/or Graphene

    • Principal Investigator
      HASHIMOTO Akihiro
    • Project Period (FY)
      2007 – 2009
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      University of Fukui
  •  High quality InN grown by MOVPE and its electron transport properties

    • Principal Investigator
      YAMAMOTO Akio
    • Project Period (FY)
      2005 – 2007
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      University of Fukui
  •  High-Voltage GaN p-n Junction Diodes with Low Leakage CurrentPrincipal Investigator

    • Principal Investigator
      KUZUHARA Masaaki
    • Project Period (FY)
      2005 – 2006
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      University of Fukui

All 2024 2023 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2007 2006 Other

All Journal Article Presentation Book Patent

  • [Book] パワーデバイス2011

    • Author(s)
      大橋弘通・葛原正明
    • Total Pages
      248
    • Publisher
      丸善株式会社
    • Data Source
      KAKENHI-PROJECT-22560327
  • [Book] 高周波半導体材料・デバイスの新展開2006

    • Author(s)
      葛原正明
    • Total Pages
      11
    • Publisher
      シーエムシー出版
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17560307
  • [Book] 高周波半導体材料・デバイスの新展開2006

    • Author(s)
      葛原正明 他
    • Total Pages
      11
    • Publisher
      シーエムシー出版
    • Data Source
      KAKENHI-PROJECT-17560307
  • [Journal Article] Improved Performance of Normally-off GaN-based MIS-HEMTs with Recessed-gate and Ultrathin Regrown AlGaN Barrier2024

    • Author(s)
      Shogo Maeda, Shinsaku Kawabata, Itsuki Nagase, Ali Baratov, Masaki Ishiguro, Toi Nezu, Takahiro Igarashi, Kishi Sekiyama, Keito Shinohara, Melvin John F. Empizo, Nobuhiko Sarukura, Masaaki Kuzuhara, Akio Yamamoto, and Joel T. Asubar
    • Journal Title

      Journal of Semiconductor Technology and Science

      Volume: 24 Issue: 1 Pages: 25-32

    • DOI

      10.5573/jsts.2024.24.1.25

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K03971
  • [Journal Article] Effect of Ultra-Thin AlGaN Regrown Layer on the Electrical Properties of ZrO2/AlGaN/GaN Structures2024

    • Author(s)
      Toi Nezu, Shogo Maeda, Ali Baratov, Suguru Terai, Kishi Sekiyama, Itsuki Nagase, Masaaki Kuzuhara, Akio Yamamoto, and Joel T. Asubar
    • Journal Title

      Phys. Status Solidi A

      Volume: 2024 Issue: 21

    • DOI

      10.1002/pssa.202400073

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K03971
  • [Journal Article] High performance normally-off recessed-gate GaN-based MIS-HEMTs achieved by oxygen plasma treatment2023

    • Author(s)
      M Ishiguro, S Terai, K Sekiyama, S Urano, A Baratov, JT Asubar, M Kuzuhara
    • Journal Title

      2023 IEEE IMFEDK Tech. Dig.

      Volume: 2023 Pages: 1-2

    • DOI

      10.1109/imfedk60983.2023.10366337

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K03971
  • [Journal Article] MOVPE growth of AlGaN on RIE-treated GaN surfaces and its application to AlGaN/GaN electron devices (INVITED)2023

    • Author(s)
      Akio Yamamoto, Ali Baratov, Masaaki Kuzuhara, and Joel T Asubar
    • Journal Title

      2023 IEEE IMFEDK Tech. Dig.

      Volume: 2023 Pages: 1-5

    • DOI

      10.1109/imfedk60983.2023.10366345

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K03971
  • [Journal Article] Low thermal budget V/Al/Mo/Au ohmic contacts for improved performance of AlGaN/GaN MIS-HEMTs2023

    • Author(s)
      Ali Baratov, Takahiro Igarashi, Masaki Ishiguro, Shogo Maeda, Terai Suguru, Masaaki Kuzuhara, Joel T Asubar
    • Journal Title

      Japanese Journal of Applied Physic

      Volume: 62 Issue: 11 Pages: 110905-110905

    • DOI

      10.35848/1347-4065/ad057a

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K03971
  • [Journal Article] AlGaN/GaN Schottky-Gate HEMTs with low thermal budget V/Al/Mo/Au ohmic contacts2023

    • Author(s)
      T Igarashi, S Maeda, A Baratov, JT Asubar, M Kuzuhara
    • Journal Title

      2023 IEEE IMFEDK Tech. Dig.

      Volume: 2023 Pages: 1-2

    • DOI

      10.1109/imfedk60983.2023.10366331

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K03971
  • [Journal Article] Stoichiometric imbalances in Mg-implanted GaN2021

    • Author(s)
      Kai C Herbert, Kazuki Shibata, Joel T Asubar, Masaaki Kuzuhara
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 60 Issue: 6 Pages: 066504-066504

    • DOI

      10.35848/1347-4065/ac0248

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04528, KAKENHI-PROJECT-19H00761
  • [Journal Article] Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs2021

    • Author(s)
      Aakash Jadhav, Takashi Ozawa, Ali Baratov, Joel T. Asubar, Masaaki Kuzuhara, Akio Wakejima, Shunpei Yamashita, Manato Deki, Yoshio Honda, Sourajeet Roy, Hiroshi Amano, Biplab Sarkar
    • Journal Title

      IEEE Journal of Electron Devices

      Volume: 9 Pages: 570-581

    • DOI

      10.1109/jeds.2021.3081463

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04528, KAKENHI-PROJECT-19H00761
  • [Journal Article] 1. Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions2021

    • Author(s)
      Aakash Jadhav, Takashi Ozawa, Ali Baratov, Joel T Asubar, Masaaki Kuzuhara, Akio Wakejima, Shunpei Yamashita, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Sourajeet Roy, Biplab Sarkar
    • Journal Title

      EEE Transactions on Electron Devices

      Volume: 68 Issue: 12 Pages: 6059-6064

    • DOI

      10.1109/ted.2021.3119528

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04528, KAKENHI-PROJECT-19H00761
  • [Journal Article] Mist chemical vapor deposited-Al2O3/AlGaN interfacial characterization for GaN MIS-HEMTs2021

    • Author(s)
      Tomohiro Motoyama, Zenji Yatabe, Yusui Nakamura, Ali Baratov, Rui Shan Low, Shun Urano, Joel T Asubar, Masaaki Kuzuhara
    • Journal Title

      2021 IEEE IMFEDK Tech. Dig.

      Volume: 2021 Pages: 1-2

    • DOI

      10.1109/imfedk53601.2021.9637625

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04528
  • [Journal Article] GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique2021

    • Author(s)
      Rui Shan Low, Joel T. Asubar, Ali Baratov, Shunsuke Kamiya, Itsuki Nagase, Shun Urano, Shinsaku Kawabata, Hirokuni Tokuda, Masaaki Kuzuhara, Yusui Nakamura, Kenta Naito, Tomohiro Motoyama, Zenji Yatabe
    • Journal Title

      Applied Physics Express

      Volume: 14 Issue: 3 Pages: 031004-031004

    • DOI

      10.35848/1882-0786/abe19e

    • NAID

      120007160996

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-19K04473, KAKENHI-PROJECT-19K04528, KAKENHI-PROJECT-19H00761
  • [Journal Article] 5. Electrical properties of GaN-based MIS-HEMTs with Al2O3 gate insulator deposited by ALD and mist-CVD techniques2021

    • Author(s)
      S Urano, RS Low, M Faris, M Ishiguro, I Nagase, A Baratov, JT Asubar, T Motoyama, Y Nakamura, Z Yatabe, M Kuzuhara
    • Journal Title

      2021 IEEE IMFEDK Tech. Dig.

      Volume: 2021 Pages: 1-2

    • DOI

      10.1109/imfedk53601.2021.9637639

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04528
  • [Journal Article] Fabrication and Characterization of ZrO2/AlGaN/GaN MIS-HEMTs with regrown AlGaN Layer2021

    • Author(s)
      S Maeda, I Nagase, A Baratov, S Urano, JT Asubar, A Yamamoto, M Kuzuhara
    • Journal Title

      2021 IEEE IMFEDK Tech. Dig.

      Volume: 2021 Pages: 1-2

    • DOI

      10.1109/imfedk53601.2021.9637576

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04528
  • [Journal Article] Recessed gate GaN-based MIS-HEMTs with Al2O3 gate dielectric deposited by mist-CVD method2021

    • Author(s)
      M Ishiguro, S Urano, RS Low, M Faris, I Nagase, A Baratov, JT Asubar, T Motoyama, Y Nakamura, Z Yatabe, M Kuzuhara
    • Journal Title

      2021 IEEE IMFEDK Tech. Dig.

      Volume: 2021 Pages: 1-2

    • DOI

      10.1109/imfedk53601.2021.9637518

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04528
  • [Journal Article] Enhancement‐Mode AlGaN/GaN Vertical Trench Metal-Insulator-Semiconductor High‐Electron‐Mobility Transistors with a High Drain Current Fabricated Using the AlGaN Regrowth Technique2020

    • Author(s)
      Akio Yamamoto, Keito Kanatani, Norifumi Yoneda, Joel, T. Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
    • Journal Title

      Physica Status Solidi A

      Volume: 217 Issue: 7 Pages: 19006221-7

    • DOI

      10.1002/pssa.201900622

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K04528, KAKENHI-PROJECT-19H00761
  • [Journal Article] Enhancement-Mode AlGaN/GaN MIS-HEMTs With High VTH and High IDmax Using Recessed-Structure With Regrown AlGaN Barrier2020

    • Author(s)
      Joel T. Asubar, Shinsaku Kawabata, Hirokuni Tokuda, Akio Yamamoto, and Masaaki Kuzuhara
    • Journal Title

      IEEE Electron Device Letters

      Volume: 41 Issue: 5 Pages: 693-696

    • DOI

      10.1109/led.2020.2985091

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K04528, KAKENHI-PROJECT-19H00761
  • [Journal Article] Design considerations for normally-off operation in Schottky gate p-GaN/AlGaN/GaN HEMTs2020

    • Author(s)
      Hirokuni Tokuda, Joel T. Asubar, Masaaki Kuzuhara
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 59 Issue: 8 Pages: 084002-084002

    • DOI

      10.35848/1347-4065/aba329

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-19K04528, KAKENHI-PROJECT-19H00761
  • [Journal Article] Influence of reactive-ion-etching depth on interface properties in Al2O3/n-GaN MOS diodes2019

    • Author(s)
      Hirokuni Tokuda, Sayaka Harada, Joel T. Asubar, and Masaaki Kuzuhara
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: 10 Pages: 1065031-6

    • DOI

      10.7567/1347-4065/ab3d11

    • NAID

      210000156988

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K04528, KAKENHI-PROJECT-19H00761
  • [Journal Article] Impact of rounded electrode corners on breakdown characteristics of AlGaN/GaN high-electron mobility transistors2018

    • Author(s)
      Taisei Yamazaki, Joel T. Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
    • Journal Title

      Applied Physics Express

      Volume: 11 Issue: 5 Pages: 0541021-0541025

    • DOI

      10.7567/apex.11.054102

    • NAID

      210000136205

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15K06013, KAKENHI-PROJECT-16H04347
  • [Journal Article] Electron concentration in highly resistive GaN substrates co-doped with Si, C, and Fe2018

    • Author(s)
      H. Tokuda, K. Suzuki, J. T. Asubar, and M. Kuzuhara
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 57 Issue: 7 Pages: 071001-071001

    • DOI

      10.7567/jjap.57.071001

    • NAID

      210000149247

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04347
  • [Journal Article] Correlation of AlGaN/GaN HEMTs electroluminescence characteristics with current collapse2018

    • Author(s)
      S. Ohi, T. Yamazaki, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    • Journal Title

      Appl. Phys. Express

      Volume: 11 Issue: 2 Pages: 024101-024101

    • DOI

      10.7567/apex.11.024101

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04347, KAKENHI-PROJECT-15K06013
  • [Journal Article] AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm2/Vs)2018

    • Author(s)
      A. Yamamoto, S. Makino, K. Kanatani, and M. Kuzuhara
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 57 Issue: 4 Pages: 045502-045502

    • DOI

      10.7567/jjap.57.045502

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04347
  • [Journal Article] Analytical derivation of interface state density from sub-threshold swing in AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors2017

    • Author(s)
      H. Tokuda, J. T. Asubar, and M. Kuzuhara
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 56 Issue: 10 Pages: 104101-104101

    • DOI

      10.7567/jjap.56.104101

    • NAID

      210000148328

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-16H04347, KAKENHI-PROJECT-15K06013
  • [Journal Article] AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation2016

    • Author(s)
      M. Kuzuhara, J. T. Asubar, and H. Tokuda
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 7 Pages: 0701011-12

    • DOI

      10.7567/jjap.55.070101

    • NAID

      210000146739

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04347, KAKENHI-PROJECT-15K06013
  • [Journal Article] Highly Reduced Current Collapse in AlGaN/GaN HEMTs by Combined Application of Oxygen Plasma Treatment and Field-plate Structures2016

    • Author(s)
      J. T. Asubar, S. Yoshida, H. Tokuda, and M. Kuzuhara
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 4S Pages: 04EG07-04EG07

    • DOI

      10.7567/jjap.55.04eg07

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06013
  • [Journal Article] Pushing the GaN HEMT towards its theoretical limit2016

    • Author(s)
      J. T. Asubar, J. Ng, H. Tokuda, M, Kuzuhara
    • Journal Title

      Compound Semiconductor Magazine

      Volume: 22 Pages: 26-31

    • Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06013
  • [Journal Article] AlGaN/GaN MIS-HEMTs with high on/off current ratio of over 5 × 1010 achieved by ozone pretreatment and using ozone oxidant for Al2O3 gate insulator2016

    • Author(s)
      H. Tokuda, J. T. Asubar, and M. Kuzuhara
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 12 Pages: 120305-120305

    • DOI

      10.7567/jjap.55.120305

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06013
  • [Journal Article] ZrO2/Al2O3積層膜をゲート絶縁膜に用いたn-GaN MISダイオードの比誘電率と界面特性2015

    • Author(s)
      樹神 真太郎、徳田 博邦、葛原 正明
    • Journal Title

      電子情報通信学会 和文論文誌C

      Volume: Vol. J98-C Pages: 27-33

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Journal Article] Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications2015

    • Author(s)
      1.M. Kuzuhara, and H. Tokuda
    • Journal Title

      IEEE Trans. Electron Devices

      Volume: 62 Issue: 2 Pages: 405-413

    • DOI

      10.1109/ted.2014.2359055

    • NAID

      120005541053

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560399, KAKENHI-PROJECT-25420328
  • [Journal Article] Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility2015

    • Author(s)
      Joel T. Asubar, Yoshiki Sakaida, Satoshi Yoshidai, Zenji Yatabe, Hirokuni Tokuda, Tamotsu Hashizume, Masaaki Kuzuhara
    • Journal Title

      Applied Physics Express

      Volume: 8 Issue: 11 Pages: 1110011-4

    • DOI

      10.7567/apex.8.111001

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06013, KAKENHI-PROJECT-25420328
  • [Journal Article] Current Collapse Reduction in AlGaN/GaN HEMTs by High-Pressure Water Vapor Annealing2015

    • Author(s)
      Joel T. Asubar, Yohei Kobayashi, Koji Yoshitsugu, Zenji Yatabe, Hirokuni Tokuda, Masahiro Horita; Yukiharu Uraoka, Tamotsu Hashizume, Masaaki Kuzuhara
    • Journal Title

      IEEE Transactions on Electron Devices

      Volume: 62 Issue: 8 Pages: 2423-2428

    • DOI

      10.1109/ted.2015.2440442

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06013, KAKENHI-PROJECT-25420328
  • [Journal Article] Reduced gate leakage and high thermal stability of AlGaN/GaN MIS-HEMTs using ZrO2/Al2O3 gate dielectric stack2014

    • Author(s)
      2. M. Hatano, Y. Taniguchi, S. Kodama, H. Tokuda, and M. Kuzuhara
    • Journal Title

      Applied Physics Express

      Volume: 7 Issue: 4 Pages: 44101-44101

    • DOI

      10.7567/apex.7.044101

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Journal Article] Over 3000 cm2/Vs room temperature two-dimensional electron gas mobility by annealing Ni/Al deposited on AlGaN/GaN heterostructures2014

    • Author(s)
      H. Tokuda, T. Kojima, and M. Kuzuhara
    • Journal Title

      Applied Physics Express

      Volume: 7 Issue: 4 Pages: 41001-41001

    • DOI

      10.7567/apex.7.041001

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560399
  • [Journal Article] Comparison of 2DEG density and mobility increase by annealing AlGaN/ GaN heterostructures deposited with Ti/Al, Ti/Au, V/Au, and Ni/Au2013

    • Author(s)
      T. Kojima, H. Tokuda, and M. Kuzuhara
    • Journal Title

      Phys. Status Solidi C

      Volume: 10 Issue: 11 Pages: 14051408-14051408

    • DOI

      10.1002/pssc.201300221

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560399
  • [Journal Article] Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures2012

    • Author(s)
      M. Hatano, N. Yafune, H. Tokuda, Y. Yamamoto, S. Hashimoto, K. Akita, and M. Kuzuhara
    • Journal Title

      IEICE Trans. Electron.

      Volume: Vol.E95-C Pages: 1332-1336

    • NAID

      10031126695

    • Data Source
      KAKENHI-PROJECT-22560327
  • [Journal Article] Role of Al and Ti for ohmic contact formation in AlGaN/GaN heterostructures2012

    • Author(s)
      H. Tokuda, T. Kojima, and M. Kuzuhara
    • Journal Title

      Applied Physics Letters

      Volume: 101 Issue: 26

    • DOI

      10.1063/1.4773511

    • NAID

      120005254370

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560399
  • [Journal Article] A method to increase sheet electron density and mobility by vacuum annealing for Ti/Al depositede AlGaN/GaN heterostructures2012

    • Author(s)
      H. Tokuda, T. Kojima, and M. Kuzuhara
    • Journal Title

      Applied Physics Letters

      Volume: 101 Issue: 8 Pages: 082111-082111

    • DOI

      10.1063/1.4748169

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560399
  • [Journal Article] High Al composition AlGaN-channel high-electron-mobility transistor on AlN substrate2010

    • Author(s)
      H. Tokuda, M. Hatano, N. Yafune, S. Hashimoto, K. Akita, Y. Yamamoto, and M. Kuzuhara
    • Journal Title

      Appl. Phys. Express

      Volume: 3 Pages: 121003-121003

    • NAID

      10027618216

    • Data Source
      KAKENHI-PROJECT-22560327
  • [Journal Article] High temperature electron transport properties in AlGaN/GaN heterostructures2010

    • Author(s)
      H. Tokuda, J. Yamazaki, and M. Kuzuhara
    • Journal Title

      J. Appl. Phys.

      Volume: 108 Pages: 104509-104509

    • NAID

      120002772033

    • Data Source
      KAKENHI-PROJECT-22560327
  • [Journal Article] 窒化物半導体トランジスタの現状と課題2007

    • Author(s)
      葛原正明
    • Journal Title

      信学技報 Vol.106 No.544

      Pages: 49-54

    • NAID

      110006277612

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17560307
  • [Journal Article] III-Nitride Semiconductor Transistors2007

    • Author(s)
      M.Kuzuhara
    • Journal Title

      IEICE Technical Report vol.106, No.544

      Pages: 49-64

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17560307
  • [Journal Article] Direct Calculation of Source Parasitic Resistance in AlGaAs/GaAs HEMTs2006

    • Author(s)
      H.Saito, S.Ito, M.Kuzuhara
    • Journal Title

      2006 Int'l Conf. Solid State Devices and Materials Extended Abstracts

      Pages: 622-623

    • NAID

      10022546249

    • Data Source
      KAKENHI-PROJECT-17560307
  • [Journal Article] AlGaN/GaN HEMTのエンハンスメント動作の検討2006

    • Author(s)
      高桑陽一, 西田猛利, 葛原正明
    • Journal Title

      信学技報 Vol.106 No.93

      Pages: 23-26

    • NAID

      110004748941

    • Data Source
      KAKENHI-PROJECT-17560307
  • [Journal Article] GaAs系HEMTのソース抵抗解析2006

    • Author(s)
      齋藤弘志, 伊藤修一, 葛原正明
    • Journal Title

      信学技報 Vol.106 No.93

      Pages: 47-50

    • NAID

      110004748946

    • Data Source
      KAKENHI-PROJECT-17560307
  • [Journal Article] Theoretical Analysis of Enhancement-Mode AlGaN/GaN HEMTs2006

    • Author(s)
      T.Nishida, Y.Takakuwa, M.Kuzuhara
    • Journal Title

      2006 Int'l Meeting for Future of Electron Devices, Kansai Digest

      Pages: 77-78

    • NAID

      110004748941

    • Data Source
      KAKENHI-PROJECT-17560307
  • [Patent] 窒化物半導体を用いた電界効果型トランジスタ及びその製造方法2012

    • Inventor(s)
      葛原正明、徳田博邦、矢船憲成
    • Industrial Property Rights Holder
      国立大学法人福井大学
    • Industrial Property Number
      2012-084259
    • Filing Date
      2012-04-02
    • Data Source
      KAKENHI-PROJECT-22560327
  • [Presentation] Interface characterization of regrown-AlGaN/ZrO2 interfaces for Normally-off GaN-based MIS-HEMTs2024

    • Author(s)
      Joel T. Asubar, Itsuki Nagase, Ali Baratov, Masaki Ishiguro, Shogo Maeda, Toi Nezu, Takahiro Igarashi, Kishi Sekiyama, Suguru Terai, Masaaki Kuzuhara, and Akio Yamamoto
    • Organizer
      WOCSDICE-EXMATEC 2024, Crete, Greece
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K03971
  • [Presentation] Effect of ultra-thin AlGaN regrown layer on the electrical properties of ZrO2/AlGaN/GaN heterostructures2023

    • Author(s)
      T. Nezu, S. Maeda, A. Baratov, I. Nagase, K. Sekiyama, S. Terai, M. Kuzuhara, A. Yamamoto, and J. T. Asubar
    • Organizer
      14th international Conference on Nitride Semiconductors (ICNS 14)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K03971
  • [Presentation] Threshold voltage control in GaN-based MIS-HEMTs with recessed structure and regrown AlGaN barrier layers2023

    • Author(s)
      Joel T. Asubar, Shinsaku Kawabata, Shun Urano, Itsuki Nagase, Ali Baratov, Masaki Ishiguro, Shogo Maeda, Toi Nezu, Takahiro Igarashi, Kishi Sekiyama, Masaaki Kuzuhara, and Akio Yamamoto
    • Organizer
      WOCSDICE-EXMATEC 2023, Palermo (Italy)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K03971
  • [Presentation] High performance normally-off recessed gate GaN-based MIS-HEMTs with oxygen plasma treatment2023

    • Author(s)
      M. Ishiguro, K. Sekiyama, S. Urano, A. Baratov, J. T. Asubar and M. Kuzuhara
    • Organizer
      2023 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2023)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K03971
  • [Presentation] MOVPE growth of AlGaN on RIE-treated GaN surfaces and its application to AlGaN/GaN electron devices (INVITED)2023

    • Author(s)
      Akio Yamamoto, Ali Baratov, Masaaki Kuzuhara, and Joel T. Asubar
    • Organizer
      2023 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2023)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K03971
  • [Presentation] Effects of low thermal budget V/Al/Mo/Au ohmic contacts on the performance of AlGaN/GaN MIS-HEMTs2023

    • Author(s)
      Ali Baratov, Takahiro Igarashi, Masaki Ishiguro, Shogo Maeda, Masaaki Kuzuhara, and Joel T. Asubar
    • Organizer
      2023 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD 2023)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K03971
  • [Presentation] Comparative studies of electron state distribution in Al2O3/AlGaN/GaN and ZrO2/AlGaN/GaN structures2023

    • Author(s)
      Nur Syazwani B. A. T., S. Maeda, A. Baratov, J. T. Asubar and M. Kuzuhara
    • Organizer
      2023 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2023)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K03971
  • [Presentation] AlGaN/GaN Schottky-Gate HEMTs with low thermal budget V/Al/Mo/Au ohmic contacts2023

    • Author(s)
      T. Igarashi, S. Maeda, A. Baratov, J. T. Asubar and M. Kuzuhara
    • Organizer
      2023 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2023)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K03971
  • [Presentation] ZrO2/Al2O3多層nano‐laminate絶縁体を有するAlGaN/GaN MIS‐HEMTsと従来のAl2O3およびZrO2 AlGaN/GaN MIS‐HEMTsの電気的特性の比較2023

    • Author(s)
      Suguru Terai, Ali Baratov, Shogo Maeda, Masaki Ishiguro, Masaaki Kuzuhara, Joel T. Asubar
    • Organizer
      令和5年度応用物理学会 北陸・信越支部学術講演会
    • Data Source
      KAKENHI-PROJECT-23K03971
  • [Presentation] Improved Performance of Normally-off GaNbased MIS-HEMTs with recessed-gate and ultrathin regrown AlGaN barrier2023

    • Author(s)
      Shogo Maeda, Shinsaku Kawabata, Itsuki Nagase, Ali Baratov, Masaki Ishiguro, Toi Nezu, Takahiro Igarashi, Kishi Sekiyama, Keito Shinohara, Melvin John F. Empizo, Nobuhiko Sarukura, Masaaki Kuzuhara, Akio Yamamoto, and Joel T. Asubar
    • Organizer
      2023 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD 2023)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K03971
  • [Presentation] Cu/Al/Mo/Au電極を用いたGaN系デバイスにおけるRTA温度と電気的特性の関係2023

    • Author(s)
      Kensei Sumida, Ali Baratov, Shogo Maeda, Terai Suguru, Masaaki Kuzuhara, Joel T. Asubar
    • Organizer
      令和5年度応用物理学会 北陸・信越支部学術講演会
    • Data Source
      KAKENHI-PROJECT-23K03971
  • [Presentation] Characterization of mist-Al2O3 gate insulator and its applications in mist-Al2O3/AlGaN/GaN MOS-HEMTs2022

    • Author(s)
      T. Motoyama, S. Urano, A. Baratov, Y. Nakamura, M. Kuzuhara, J. T. Asubar, Z. Yatabe
    • Organizer
      第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H00761
  • [Presentation] AlGaN/GaN MIS-HEMTs with mist- and ALD Al2O3 gate dielectric2022

    • Author(s)
      Shun Urano, Joel T. Asubar, Rui Shan Low, Faris Muhammad, Masaki Ishiguro, Itsuki Nagase, Ali Baratov, Tomohiro Motoyama, Yusui Nakamura, Masaaki Kuzuhara, and Zenji Yatabe
    • Organizer
      The 69th Japan Society of Applied Physics Spring Meeting 2022
    • Data Source
      KAKENHI-PROJECT-19K04528
  • [Presentation] Characterization of mist-Al2O3 gate insulator and its applications in mist-Al2O3/AlGaN/GaN MOS-HEMTs2022

    • Author(s)
      Tomohiro Motoyama, Shun Urano, Ali Baratov, Yusui Nakamura, Masaaki Kuzuhara, Joel T. Asubar, and Zenji Yatabe
    • Organizer
      The 69th Japan Society of Applied Physics Spring Meeting 2022
    • Data Source
      KAKENHI-PROJECT-19K04528
  • [Presentation] AlGaN/GaN MIS-HEMTs with mist- and ALD Al2O3 gate dielectric2022

    • Author(s)
      S. Urano, J. T. Asubar, R. S. Low, F. Muhammad, M. Ishiguro, I. Nagase, A. Baratov, T. Motoyama, Y. Nakamura, M. Kuzuhara, Z. Yatabe
    • Organizer
      第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H00761
  • [Presentation] Electrical properties of GaN-based MIS-HEMTs with Al2O3 gate insulator deposited by ALD and mist-CVD techniques2021

    • Author(s)
      S. Urano, R. S. Low, M. Faris, M. Ishiguro, I. Nagase, A. Baratov, J. T. Asubar, T. Motoyama, Y. Nakamura, Z. Yatabe, M. Kuzuhara
    • Organizer
      2021 IEEE International Meeting for Future of Electron Devices, Kansai
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00761
  • [Presentation] Enhanced gain characteristics of AlGaN/GaN MOS-HEMTs with Al2O3 gate dielectric2021

    • Author(s)
      K. Shibata, K. C. Herbert, A. Baratov, J. T. Asubar, A. Wakejima, M. Kuzuhara
    • Organizer
      2021 IEEE International Meeting for Future of Electron Devices, Kansai
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00761
  • [Presentation] Electrical properties of GaN-based MIS-HEMTs with Al2O3 gate insulator deposited by ALD and mist-CVD techniques2021

    • Author(s)
      S. Urano, R. S. Low, M. Faris, M. Ishiguro, I. Nagase, A. Baratov, J. T. Asubar, T. Motoyama, Y. Nakamura, Z. Yatabe and M. Kuzuhara
    • Organizer
      2021 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2021)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04528
  • [Presentation] Fabrication and Characterization of ZrO2/AlGaN/GaN MIS-HEMTs with regrown AlGaN Layer2021

    • Author(s)
      S. Maeda, I. Nagase, A. Baratov, S. Urano,J. T. Asubar, A. Yamamoto, M. Kuzuhara
    • Organizer
      2021 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK 2021)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04528
  • [Presentation] GaNへのMgイオン注入におけるN原子の影響2021

    • Author(s)
      ハーバート 甲斐, 柴田 和樹, ジョエル・アスバル, 葛原 正明
    • Organizer
      応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H00761
  • [Presentation] Fabrication and Characterization of ZrO2/AlGaN/GaN MIS-HEMTs with regrown AlGaN Layer2021

    • Author(s)
      S. Maeda, I. Nagase, A. Baratov, S. Urano,J. T. Asubar, A. Yamamoto, M. Kuzuhara
    • Organizer
      2021 IEEE International Meeting for Future of Electron Devices, Kansai
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00761
  • [Presentation] Mist chemical vapor deposited-Al2O3/AlGaN interfacial characterization for GaN MIS-HEMTs2021

    • Author(s)
      T. Motoyama, Z. Yatabe, Y. Nakamura, A. Baratov, R. S. Low, S. Urano, J. T. Asubar, M. Kuzuhara
    • Organizer
      2021 IEEE International Meeting for Future of Electron Devices, Kansai
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00761
  • [Presentation] Mist chemical vapor deposited-Al2O3/AlGaN interfacial characterization for GaN MIS-HEMTs2021

    • Author(s)
      Tomohiro Motoyama, Zenji Yatabe, Yusui Nakamura, Ali Baratov, Rui Shan Low, Shun Urano, Joel T. Asubar, Masaaki Kuzuhara
    • Organizer
      2021 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2021)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04528
  • [Presentation] Recessed gate GaN-based MIS-HEMTs with Al2O3 gate dielectric deposited by mist-CVD method2021

    • Author(s)
      M. Ishiguro, S. Urano, R. S. Low, M. Faris, I. Nagase, A. Baratov, J. T. Asubar, T. Motoyama, Y. Nakamura, Z. Yatabe, M. Kuzuhara
    • Organizer
      2021 IEEE International Meeting for Future of Electron Devices, Kansai
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00761
  • [Presentation] Recessed gate GaN-based MIS-HEMTs with Al2O3 gate dielectric deposited by mist-CVD method2021

    • Author(s)
      M. Ishiguro, S. Urano, R. S. Low, M. Faris, I. Nagase, A. Baratov, J. T. Asubar, T. Motoyama, Y. Nakamura, Z. Yatabe, M. Kuzuhara
    • Organizer
      2021 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK 2021)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04528
  • [Presentation] GaN HEMT technology for low-loss and high-voltage applications2021

    • Author(s)
      Masaaki Kuzuhara
    • Organizer
      Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2021)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00761
  • [Presentation] GaN-based MIS-HEMTs with Mist Chemical Vapor Deposited Al2O32020

    • Author(s)
      Low Rui Shan, Itsuki Nagase, Ali Baratov, Joel Tacla Asubar, Hirokuni Tokuda, Masaaki Kuzuhara, Zenji Yatabe, Kenta Naito, Motoyama Tomohiro, Yusui Nakamura
    • Organizer
      IEICE Electron Device 2020
    • Data Source
      KAKENHI-PROJECT-19K04528
  • [Presentation] Improved interfaces of high-k ZrO2 and AlGaN via ex-situ MOVPE regrowth2020

    • Author(s)
      Itsuki Nagase, Joel T. Asubar, Rui Shan Low, Shun Urano, Shunsuke Kamiya, Ali Baratov, Hirokuni Tokuda, Akio Yamamoto, Masaaki Kuzuhara
    • Organizer
      IEEE IMFEDK 2020 Satellite event
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00761
  • [Presentation] Effect of Post-Metallization Annealing on Properties of ZrO2/regrown-AlGaN/GaN structures2020

    • Author(s)
      Shun Urano, Joel T. Asubar, Itsuki Nagase, Rui Shan Low, Shunsuke Kamiya, Ali Baratov, Hirokuni Tokuda, Akio Yamamoto, Masaaki Kuzuhara
    • Organizer
      The IEEE 2020 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04528
  • [Presentation] Effect of recoil-implanted N atoms on defect formation in Mg-implanted GaN2020

    • Author(s)
      Kai C. Herbert, Kazuki Shibata, Joel. T. Asubar, Masaaki Kuzuhara
    • Organizer
      IEEE IMFEDK 2020 Satellite event
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00761
  • [Presentation] Improved performance in GaN-based HEMTs with insulated gate structures2020

    • Author(s)
      Ali Baratov, Takashi Ozawa, Shunpei Yamashita, Joel T. Asubar, Hirokuni Tokuda, Masaaki Kuzuhara
    • Organizer
      IEICE Electron Device 2020
    • Data Source
      KAKENHI-PROJECT-19K04528
  • [Presentation] Normally-off recessed-gate ZrO2/AlGaN/GaN MIS-HEMTs with regrown AlGaN barrier2020

    • Author(s)
      Itsuki Nagase, Joel T. Asubar, Rui Shan Low, Shun Urano, Hirokuni Tokuda, Akio Yamamoto, Masaaki Kuzuhara
    • Organizer
      International Conference on Solid State Devices and Materials
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00761
  • [Presentation] Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment2020

    • Author(s)
      Shunsuke Kamiya, Takashi Nishitani, Yu Matsuda, Nozomu Takano, Joel T. Asubar, Hirokuni Tokuda, Masaaki Kuzuhara
    • Organizer
      IEICE Electron Device 2020
    • Data Source
      KAKENHI-PROJECT-19K04528
  • [Presentation] Characterization of mist-CVD deposited Al2O3 films on AlGaN/GaN heterostructures2020

    • Author(s)
      Tomohiro Motoyama, Kenta Naito, Yusui Nakamura, Zenji Yatabe, Rui Shan Low, Itsuki Nagase, Ali Baratov, Hirokuni Tokuda, Masaaki Kuzuhara, Joel T. Asubar
    • Organizer
      The IEEE 2020 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04528
  • [Presentation] AlGaN/GaN SG-HEMT と比べてMIS-HEMT の優れた高周波特性に関する研究2020

    • Author(s)
      バラトフ アリ, 小澤渉至, 山下隼平, Joel T. Asubar, 徳田 博邦, 葛原 正明
    • Organizer
      電子情報通信学会 電子部品・材料研究会
    • Data Source
      KAKENHI-PROJECT-19H00761
  • [Presentation] Effect of post-metallization annealing on properties of ZrO2/regrown-AlGaN/GaN structures2020

    • Author(s)
      Shun Urano, Joel T. Asubar, Itsuki Nagase, Rui Shan Low, Shunsuke Kamiya, Ali Baratov, Hirokuni Tokuda, Akio Yamamoto, Masaaki Kuzuhara
    • Organizer
      IEEE IMFEDK 2020 Satellite event
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00761
  • [Presentation] Normally-off Recessed-gate ZrO2/AlGaN/GaN MIS-HEMTs with Regrown AlGaN Barrier2020

    • Author(s)
      Itsuki Nagase, Joel T. Asubar, Rui Shan Low, Shun Urano, Hirokuni Tokuda, Akio Yamamoto, Masaaki Kuzuhara
    • Organizer
      Solid State Devices and Materials 2020 (SSDM 2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04528
  • [Presentation] Improved Interfaces of high-K ZrO2 and AlGaN via ex-situ MOVPE regrowth2020

    • Author(s)
      Itsuki Nagase, Joel T. Asubar, Rui Shan Low, Shun Urano, Shunsuke Kamiya, Ali Baratov, Hirokuni Tokuda, Akio Yamamoto, Masaaki Kuzuhara
    • Organizer
      The IEEE 2020 International Meeting for Future of Electron Devices, Kansai (IMFEDK 2020)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04528
  • [Presentation] Impact of regrown AlGaN layer on the properties of Al2O3/AlGaN/GaN metal-insulator-semiconductor structures2019

    • Author(s)
      J. T. Asubar, S. Kawabata, L. R. Shan, H. Tokuda, A. Yamamoto, and M. Kuzuhara
    • Organizer
      43rd Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00761
  • [Presentation] Recent progress in Normally-off GaN-based transistors2019

    • Author(s)
      Joel T. Asubar, Shinsaku Kawabata, Hirokuni Tokuda, Akio Yamamoto, and Masaaki Kuzuhara
    • Organizer
      日本表面真空学会 関西支部 合同セミナー2019
    • Invited
    • Data Source
      KAKENHI-PROJECT-19K04528
  • [Presentation] Threshold voltage control in normally-off Al2O3/AlGaN/GaN MOS-HEMTs through Al2O3 thickness variation2019

    • Author(s)
      Shinsaku Kawabata, Joel Asubar, Hirokuni Tokuda, Akio Yamamoto, Masaaki Kuzuhara
    • Organizer
      The 80th JSAP Autumn Meeting 2019
    • Data Source
      KAKENHI-PROJECT-19K04528
  • [Presentation] GaN-on-GaN HEMTs with high breakdown critical fields2019

    • Author(s)
      A. Aoai, K. Suzuki, A. Tamamoto, J. T. Asubar, H. Tokuda, N. Okada, K. Tadatomo, and M. Kuzuhara
    • Organizer
      Topical Workshop on Heterostructure Microelectronics 2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00761
  • [Presentation] Impact of SiN capping during ohmic annealing on performance of GaN-based MIS HEMTs2019

    • Author(s)
      L. S. Low, S. Kawabata, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    • Organizer
      IEEE IMFEDK 2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00761
  • [Presentation] Improved insulator/semiconductor interfaces in Al2O3/AlGaN/GaN structures by AlGaN layer regrowth2019

    • Author(s)
      Shinsaku Kawabata, Joel T. Asubar, Hirokuni Tokuda, Akio Yamamoto, and Masaaki Kuzuhara
    • Organizer
      Compound Semiconductor Week 2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04528
  • [Presentation] Improved insulator/semiconductor interfaces in Al2O3/AlGaN/GaN structures by AlGaN layer regrowth2019

    • Author(s)
      S. Kawabata, J. T. Asubar, H. Tokuda, A. Yamamoto, and M. Kuzuhara
    • Organizer
      Compound Semiconductor Week 2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00761
  • [Presentation] Sub-micron gate fabrication process for AlGaN/GaN HEMTs2019

    • Author(s)
      A. Baratov, T. Ozawa, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    • Organizer
      IEEE IMFEDK 2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00761
  • [Presentation] Study on luminescence and leakage current of AlGaN/GaN HEMTs biased near off-state breakdown2019

    • Author(s)
      S. Kamiya, T. Nishitani, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    • Organizer
      IEEE IMFEDK 2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H00761
  • [Presentation] GaN HEMTの特徴、開発経緯と将来展望2019

    • Author(s)
      葛原正明
    • Organizer
      学振ワイドバンドギャップ半導体光・電子デバイス第162委員会研究会、上智大
    • Invited
    • Data Source
      KAKENHI-PROJECT-16H04347
  • [Presentation] Vertical GaN MOSFETs with a regrown AlGaN barrier layers2019

    • Author(s)
      M. Kuzuhara and A. Yamamoto
    • Organizer
      EMN Epitaxy 2019, A39, Amsterdam, Netherland
    • Invited
    • Data Source
      KAKENHI-PROJECT-19H00761
  • [Presentation] High-breakdown voltage GaN HEMTs fabricated on semi-insulating GaN substrates2019

    • Author(s)
      M. Kuzuhara, J. T. Asubar, and H. Tokuda
    • Organizer
      Proc. SSLCHINA & IFWS 2019
    • Invited
    • Data Source
      KAKENHI-PROJECT-19H00761
  • [Presentation] Impact of regrown AlGaN layer on the properties of Al2O3/AlGaN/GaN metal-insulator-semiconductor structures2019

    • Author(s)
      Joel T. Asubar, Shinsaku Kawabata, Low Rui Shan, Hirokuni Tokuda, Akio Yamamoto, and Masaaki Kuzuhara
    • Organizer
      Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K04528
  • [Presentation] Fe添加した半絶縁性GaN基板の絶縁破壊電界評価2018

    • Author(s)
      青合充樹、鈴木孝介、J.T.Asubar、徳田博邦、岡田成仁、只友一行、葛原正明
    • Organizer
      第79回応用物理学会秋季講演会、21a-331-1、 名古屋
    • Data Source
      KAKENHI-PROJECT-16H04347
  • [Presentation] Characterization of resistivity and breakdown field in Fe-doped semi-insulating GaN substrates2018

    • Author(s)
      K. Suzuki, A. Aoai, J. T. Asubar, H. Tokuda, K. Nojima, N. Ishibashi, N. Okada, K. Tadatomo, and M. Kuzuhara
    • Organizer
      WOCSDICE 2018, Bucharest, Romania
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04347
  • [Presentation] Study on breakdown field in Fe-doped semi-insulating GaN substrates2018

    • Author(s)
      A. Aoai, K. Suzuki, J. T. Asubar, H. Tokuda, N. Okada, K. Tadatomo, and M. Kuzuhara
    • Organizer
      IWN-2018, ThP-ED-2
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04347
  • [Presentation] GaN-based HEMTs for high-voltage operation2018

    • Author(s)
      M. Kuzuhara
    • Organizer
      Int’l. Conf. on Materials and Systems for Sustainability (ICMaSS), 01-Nitride-1, Nagoya
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04347
  • [Presentation] Characterization of AlGaN/GaN recessed MIS-HEMTs using sputtered SiN as gate dielectric2018

    • Author(s)
      Wataru Gamachi, Joel Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
    • Organizer
      2018-nendo Shunki Dai-65-kai Ouyou Butsuri Gakku Kankei Rengou Koenkai (Japan Society of Applied Physics 65th Spring Meeting)
    • Data Source
      KAKENHI-PROJECT-15K06013
  • [Presentation] Characterization of resistivity and breakdown field in Fe-doped semi-insulating GaN substrates2018

    • Author(s)
      A. Aoai, K. Suzuki, J. T. Asubar, H. Tokuda, M. Kuzuhara, K. Nojima, N. Ishibashi, N. Okada, and K. Tadatomo
    • Organizer
      IMFEDK 2018, Kyoto
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04347
  • [Presentation] Investigation of dynamic on-resistance of multi-mesa-channel AlGaN/GaN HEMTs2017

    • Author(s)
      J. T. Asubar, H. Tokuda, T. Hashizume, and M. Kuzuhara
    • Organizer
      EM-NANO2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04347
  • [Presentation] Advanced breakdown characteristics of AlGaN/GaN HEMTs fabricated on free-standing GaN substrates2017

    • Author(s)
      M. Kuzuhara
    • Organizer
      8th Asia-Pacific Workshop on Widegap Semiconductors (APWS)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04347
  • [Presentation] Effect of Substrate Thermal Resistivity on Breakdown Voltage of AlGaN/GaN HEMTs2017

    • Author(s)
      Taisei Yamazaki, Joel T. Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
    • Organizer
      6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06013
  • [Presentation] High Breakdown Voltage AlGaN/GaN HEMTs Fabricated on Semi-ins2017

    • Author(s)
      M. Kuzuhara, J. T. Asubar, and H. Tokuda
    • Organizer
      Workshop on Frontier Photonic and Electronic Materials and Devices
    • Place of Presentation
      Mallorca, Spain
    • Year and Date
      2017-03-05
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04347
  • [Presentation] Effect of reverse bias annealing on the properties of AlGaN/GaN MIS-HEMTs with recessed-gate structure2017

    • Author(s)
      S. Gamachi, K. Ishii, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    • Organizer
      IMFEDK2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04347
  • [Presentation] Investigation of Dynamic On-Resistance of Multi-Mesa-Channel AlGaN/GaN HEMTs2017

    • Author(s)
      Joel T. Asubar, Hirokuni Tokuda, Tamotsu Hashizume, and Masaaki Kuzuhara
    • Organizer
      6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06013
  • [Presentation] GaN-based HEMTs for high-voltage operation2017

    • Author(s)
      M. Kuzuhara
    • Organizer
      Int’l. Conf. on Materials and Systems for Sustainability (ICMaSS)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04347
  • [Presentation] Enhancement mode AlGaN/GaN MISHEMTs with recessed-gate structures exhibiting high threshold voltage2017

    • Author(s)
      W. Gamachi, K. Ishii, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    • Organizer
      EM-NANO2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04347
  • [Presentation] Effective Suppression of Current Collapse in AlGaN/GaN HEMTs2017

    • Author(s)
      Joel T. Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
    • Organizer
      35th Samahang Pisika ng Pilipinas Physics Conference (SPP 2017)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06013
  • [Presentation] Effect of Reverse Bias Annealing on the Properties of AlGaN/GaN MIS-HEMTs with Recessed-gate Structure2017

    • Author(s)
      W. Gamachi, K. Ishii, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    • Organizer
      2017 International Meeting for Future of Electron Devices Kansai (IMFEDK 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06013
  • [Presentation] Enhancement-Mode AlGaN/GaN MOS-HEMTs with Recessed-Gate Structures Exhibiting High Threshold Voltage2017

    • Author(s)
      W. Gamachi, K. Ishii, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    • Organizer
      6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06013
  • [Presentation] Reduced current collapse in multi-fingered AlGaN/GaN MOS-HEMTs with dual field plate2017

    • Author(s)
      R. Yamaguchi, Y. Suzuki, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    • Organizer
      IMFEDK2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04347
  • [Presentation] Effect of substrate thermal resistivity on breakdown voltage of AlGaN/GaN HEMTs2017

    • Author(s)
      T. Yamazaki, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    • Organizer
      EM-NANO2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04347
  • [Presentation] GaN HEMTs on highly-resistive GaN substrates2017

    • Author(s)
      M. Kuzuhara, J. -H. Ng., T. Yamazaki, J. T. Asubar, and H. Tokuda
    • Organizer
      TWHM2017
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04347
  • [Presentation] Characterization of AlGaN/GaN HEMTs with directly regrown AlGaN barrier layer2017

    • Author(s)
      K. Kanatani, S. Yoshida, A. Yamamoto, and M. Kuzuhara
    • Organizer
      IMFEDK2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04347
  • [Presentation] Improved linearity, stability, and thermal performance of multi-mesa-channel AlGaN/GaN HEMTs2016

    • Author(s)
      J. T. Asubar, H. Tokuda, M, Kuzuhara, Z. Yatabe, K. Nishiguchi, and T. Hashizume
    • Organizer
      34th Samahang Pisika ng Pilipinas Physics Conference
    • Place of Presentation
      University of the Philippines Visayas, Iloilo, Philippines
    • Year and Date
      2016-08-18
    • Invited
    • Data Source
      KAKENHI-PROJECT-15K06013
  • [Presentation] High on/off ratio AlGaN/GaN MIS-HEMTs with ALD deposited Al2O3 gate dielectric using ozone as an oxidant2016

    • Author(s)
      H. Tokuda, J. T. Asubar, M. Kuzuhara
    • Organizer
      2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Place of Presentation
      Hakodate, Japan
    • Year and Date
      2016-07-04
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06013
  • [Presentation] Effect of Metal Electrode Shape Irregularities on AlGaN/GaN HEMTs Breakdown Voltage Revealed by Electroluminescence2016

    • Author(s)
      S. Makino, T. Yamazaki, S. Ohi, H. Tokuda, J. T. Asubar, and M. Kuzuhara
    • Organizer
      40th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) 2016
    • Place of Presentation
      Aveiro, Portugal
    • Year and Date
      2016-06-06
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06013
  • [Presentation] AlGaN/GaN HEMTs on Free-standing GaN substrate with Breakdown Voltage of 5 kV and Effective Lateral Critical Field of 1 MV/cm2016

    • Author(s)
      J. H. Ng, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    • Organizer
      2016 International Conf. on Compound Semiconductor Manufacturing Technology
    • Place of Presentation
      Miami, FL, USA
    • Year and Date
      2016-05-16
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04347
  • [Presentation] AlGaN/GaN HEMTs on Free-standing GaN Substrates with Breakdown Voltage of 5 kV and Effective Lateral Critical Field of 1 MV/cm2016

    • Author(s)
      J. H. Ng, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    • Organizer
      2016 International Conference on Compound Semiconductor Manufacturing Technology (CS Mantech 2016)
    • Place of Presentation
      Miami, Florida, USA
    • Year and Date
      2016-06-16
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06013
  • [Presentation] Impact of Drain Electrode Shape Irregularities on Breakdown Voltage of AlGaN/GaN HEMTs2016

    • Author(s)
      S. Ohi, S. Makino, T. Yamazaki, H. Tokuda, J. T. Asubar, and M. Kuzuhara
    • Organizer
      2016 Compound Semiconductor Week
    • Place of Presentation
      Toyama International Conference Center, Toyama, Japan
    • Year and Date
      2016-06-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06013
  • [Presentation] GaN-based Heterojunction FETs for Power Applications2016

    • Author(s)
      M. Kuzuhara
    • Organizer
      China Semiconductor Technology International Conference 2016
    • Place of Presentation
      Shanghai, China
    • Year and Date
      2016-03-13
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Presentation] Effect of Passivation on breakdown voltage and dynamic on-resistance in AlGaN/GaN HEMTs2016

    • Author(s)
      M. Kuzuhara, J. T. Asubar, and H. Tokuda
    • Organizer
      E-MRS, Fall Meeting
    • Place of Presentation
      Warsaw, Poland
    • Year and Date
      2016-09-19
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H04347
  • [Presentation] Breakdown Voltages of AlGaN/GaN HEMTs Breakdown degradation of AlGaN/GaN HEMTs with multi-finger gate patterns2016

    • Author(s)
      S. Makino, S. Ohi, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    • Organizer
      2016 International Meeting for Future of Electron Devices Kansai (IMFEDK 2016)
    • Place of Presentation
      Ryukoku University Avanti Kyoto Hall, Kyoto, Japan
    • Year and Date
      2016-06-23
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K06013
  • [Presentation] Highly Reduced Current Collapse in AlGaN/GaN HEMTs by Combined2015

    • Author(s)
      J. T. Asubar, S. Yoshida, H. Tokuda, and M. Kuzuhara
    • Organizer
      SSDM 2015
    • Place of Presentation
      Sapporo, Japan
    • Year and Date
      2015-09-27
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Presentation] Correlation between Luminescence and Current Collapse in AlGaN/GaN HEMTs2015

    • Author(s)
      S. Ohi, Y. Sakaida, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    • Organizer
      CS-MANTECH 2015
    • Place of Presentation
      Arizona, USA
    • Year and Date
      2015-05-18
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Presentation] Highly Reduced Current Collapse in AlGaN/GaN HEMTs by Combined Application of Oxygen Plasma Treatment and Field-plate Structures2015

    • Author(s)
      Joel T. Asubar, Satoshi Yoshida, Hirokuni Tokuda, and Masaaki Kuzuhara
    • Organizer
      2015 International Conference on Solid State Devices and Materials (SSDM 2015)
    • Place of Presentation
      Sapporo, Hokkaido, Japan
    • Year and Date
      2015-09-27
    • Data Source
      KAKENHI-PROJECT-15K06013
  • [Presentation] Electrical characterization of stepped AlGaN/GaN heterostructures2015

    • Author(s)
      S. Kodama, J. T. Asubar, H. Tokuda, S. Nakazawa, M. Ishida, T. Ueda, and M. Kuzuhara
    • Organizer
      WOCSDICE 2015
    • Place of Presentation
      Smolenice, Slovakia
    • Year and Date
      2015-06-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Presentation] GaN-based HEMTs for High-voltage and Low-loss Power Applications2015

    • Author(s)
      M. Kuzuhara, J. T. Asubar, and H. Tokuda
    • Organizer
      46 th IEEE Semiconductor Interface Specialists Conf.
    • Place of Presentation
      Washington D.C., USA
    • Year and Date
      2015-12-02
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Presentation] Suppressed Current Collapse in High Pressure Water Vapor Annealed AlGaN/GaN HEMTs2015

    • Author(s)
      Y. Kobayashi, J. T. Asubar, K. Yoshitsugu, H. Tokuda, M. Horita, Y. Uraoka, and M. Kuzuhara
    • Organizer
      CS-MANTECH 2015
    • Place of Presentation
      Arizona, USA
    • Year and Date
      2015-05-18
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Presentation] Correlation between Electroluminescence and Current Collapse in AlGaN/GaN HEMTs2015

    • Author(s)
      Shintaro Ohi, Yoshiki Sakaida, Joel T. Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
    • Organizer
      2016 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH 2015)
    • Place of Presentation
      Scottsdale, Arizona, USA
    • Year and Date
      2015-05-18
    • Data Source
      KAKENHI-PROJECT-15K06013
  • [Presentation] Characterization and Reduction of Current Collapse in AlGaN/GaN HEMTs2015

    • Author(s)
      M. Kuzuhara, J. T. Asubar, and H. Tokuda
    • Organizer
      2015 German-Japanese-Spanish Joint Workshop
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2015-07-12
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Presentation] Current Collapse in AlGaN/GaN HEMTs with a GaN Cap Layer2015

    • Author(s)
      S. Yoshida, Y. Sakaida, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    • Organizer
      IEEE IMFEDK 2015
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2015-06-04
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Presentation] GaN-based Power Devices2015

    • Author(s)
      M. Kuzuhara, J. T. Asubar, and H. Tokuda
    • Organizer
      EM-NANO 2015
    • Place of Presentation
      Niigata, Japan
    • Year and Date
      2015-06-16
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Presentation] Suppressed Current Collapse in High Pressure Water Vapor Annealed AlGaN/GaN HEMTs2015

    • Author(s)
      Yohei Kobayashi, Joel T. Asubar, Koji Yoshitsugu, Hirokuni Tokuda, and Masahiro Horita, Yukiharu Uraoka, and Masaaki Kuzuhara
    • Organizer
      2016 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH 2015)
    • Place of Presentation
      Scottsdale, Arizona, USA
    • Year and Date
      2015-05-18
    • Data Source
      KAKENHI-PROJECT-15K06013
  • [Presentation] Comparative study of oxygen plasma treatment and GaN cap layer effects on the current collapse of AlGaN/GaN HEMTs2015

    • Author(s)
      Joel T. Asubar, Yoshiki Sakaida, Satoshi Yoshida, Zenji Yatabe, Hirokuni Tokuda, Tamotsu Hashizume, and Masaaki Kuzuhara
    • Organizer
      11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015)
    • Place of Presentation
      Takayama, Japan
    • Year and Date
      2015-08-23
    • Data Source
      KAKENHI-PROJECT-15K06013
  • [Presentation] Electrical Characterization of stepped AlGaN/GaN Heterostructures2015

    • Author(s)
      Shintaro Kodama, Joel T. Asubar, Hirokuni Tokuda, S, Nakazawa, M. Ishida, T. Ueda, and Masaaki Kuzuhara
    • Organizer
      The 39th Workshop on Compound Semiconductor Devices and Integrated Circuits
    • Place of Presentation
      Smolenice castle, Slovakia
    • Year and Date
      2015-06-08
    • Data Source
      KAKENHI-PROJECT-15K06013
  • [Presentation] Improved current collapse in AlGaN/GaN HEMTs by O2 plasma treatment2014

    • Author(s)
      Y. Sakaida, H. Tokuda, and M. Kuzuhara
    • Organizer
      CS-MANTECH
    • Place of Presentation
      米国、コロラド
    • Year and Date
      2014-05-21
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Presentation] Challenges of GaN-based transistors for power electronics applications2014

    • Author(s)
      M. Kuzuhara, and H. Tokuda
    • Organizer
      AWAD 2014
    • Place of Presentation
      金沢
    • Year and Date
      2014-07-01
    • Invited
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Presentation] 熱処理により導入されるAlGaN/GaN界面歪による2DEG移動度の増加2014

    • Author(s)
      川口、徳田、葛原
    • Organizer
      第75回応用物理学会秋季講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-18
    • Data Source
      KAKENHI-PROJECT-24560399
  • [Presentation] Analysis of time dependent current collapse in AlGaN/GaN HEMTs2014

    • Author(s)
      R. Maeta, H. Tokuda, and M. Kuzuhara
    • Organizer
      ASDAM 2014
    • Place of Presentation
      スロバキア
    • Year and Date
      2014-10-22
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Presentation] Enhanced 2DEG mobility by thermally induced strain between deposited metals and AlGaN/GaN heterostructures2014

    • Author(s)
      G. Kawaguchi, T. Kojima, H. Tokuda, and M. Kuzuhara
    • Organizer
      Int'l Symposium on Compound Semiconductors 2014
    • Place of Presentation
      Montpellier, France
    • Data Source
      KAKENHI-PROJECT-24560399
  • [Presentation] Interface Properties of n-GaN MIS Diodes with ZrO2/Al2O3 Laminated Films as a Gate Insulator2014

    • Author(s)
      S. Kodama, H. Tokuda, and M. Kuzuhara
    • Organizer
      IMFEDK2014
    • Place of Presentation
      京都
    • Year and Date
      2014-06-19
    • Data Source
      KAKENHI-PROJECT-25420328
  • [Presentation] Challenges of GaN-based transistors for power electronics applications2014

    • Author(s)
      M. Kuzuhara, and H. Tokuda
    • Organizer
      2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Place of Presentation
      Kanazawa, Japan
    • Year and Date
      2014-07-01
    • Invited
    • Data Source
      KAKENHI-PROJECT-24560399
  • [Presentation] AlGaN/GaN Heterojunction FETs for High-Breakdown and Low-Leakage Operation2012

    • Author(s)
      M. Kuzuhara and H. Tokuda
    • Organizer
      Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME 2012)
    • Place of Presentation
      Honolulu, Hawaii
    • Data Source
      KAKENHI-PROJECT-22560327
  • [Presentation] Status and Perspective of GaN-based Technology in Japan2012

    • Author(s)
      Masaaki Kuzuhara
    • Organizer
      CS-MANTECH 2012
    • Place of Presentation
      Boston, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-22560327
  • [Presentation] GaN-based electronics2012

    • Author(s)
      M. Kuzuhara
    • Organizer
      The Ninth Int'l Conf. on Advanced Semiconductor Devices and Microsystems (ASDAM 2012)
    • Place of Presentation
      Smolenice, Slovakia
    • Data Source
      KAKENHI-PROJECT-22560327
  • [Presentation] GaN-based electronics2012

    • Author(s)
      Masaaki Kuzuhara
    • Organizer
      ASDAM 2012
    • Place of Presentation
      Smolenice, Slovakia
    • Invited
    • Data Source
      KAKENHI-PROJECT-22560327
  • [Presentation] AlGaN/GaN MIS HEMTの直流特性に与える熱処理の影響2012

    • Author(s)
      畑野舞子, 谷口裕哉, 徳田博邦, 葛原正明
    • Organizer
      信学技報
    • Data Source
      KAKENHI-PROJECT-22560327
  • [Presentation] AlGaN/GaN MIS HEMT の高温特性2012

    • Author(s)
      畑野舞子, 谷口裕哉, 徳田博邦, 葛原正明
    • Organizer
      第73回応用物理学会学術講演会
    • Data Source
      KAKENHI-PROJECT-22560327
  • [Presentation] Status and Perspective of GaN-based Technology in Japan2012

    • Author(s)
      M. Kuzuhara and H. Tokuda
    • Organizer
      CS MANTECH
    • Place of Presentation
      Boston, USA
    • Data Source
      KAKENHI-PROJECT-22560327
  • [Presentation] Influence of annealing on DC performance for AlGaN/GaN MIS HEMTs2012

    • Author(s)
      M. Hatano, Y. Taniguchi, H. Tokuda, and M. Kuzuhara
    • Organizer
      2012 International Workshop on Nitride Semiconductors
    • Place of Presentation
      Sapporo
    • Data Source
      KAKENHI-PROJECT-22560327
  • [Presentation] High-temperature RF characterization of AlGaN/GaN HEMTs2011

    • Author(s)
      J. Yamazaki, M. Hatano, H. Tokuda and M. Kuzuhara
    • Organizer
      38th International Symposium on Comp. Semicond
    • Place of Presentation
      Berlin
    • Data Source
      KAKENHI-PROJECT-22560327
  • [Presentation] 窒化物半導体電子デバイスの現状と展開2011

    • Author(s)
      葛原正明
    • Organizer
      応用電子物性分科会
    • Place of Presentation
      京都(招待講演)
    • Year and Date
      2011-07-22
    • Data Source
      KAKENHI-PROJECT-22560327
  • [Presentation] High-Temperature RF Characterization of AlGaN-Channel HEMTs2011

    • Author(s)
      M. Hatano, J. Yamazaki, N. Yafune, S. Hashimoto, K. Akita, Y. Yamamoto, and M. Kuzuhara
    • Organizer
      9th Topical Workshop on Heterostructure Microelectronics (TWHM 2011)
    • Place of Presentation
      Gifu
    • Data Source
      KAKENHI-PROJECT-22560327
  • [Presentation] Next Challenges in III-Nitride HEMTs (invited)2011

    • Author(s)
      M. Kuzuhara
    • Organizer
      Workshop on Frontier Photonic and Electronic Materials and Devices
    • Place of Presentation
      Granada
    • Data Source
      KAKENHI-PROJECT-22560327
  • [Presentation] Next Challenges in GaN HEMT Electronics (invited)2010

    • Author(s)
      Masaaki Kuzuhara
    • Organizer
      2010 HETECH Workshop
    • Place of Presentation
      ギリシャ(クレタ)
    • Year and Date
      2010-10-19
    • Data Source
      KAKENHI-PROJECT-22560327
  • [Presentation] Next challenges in GaN HEMT electronics (invited)2010

    • Author(s)
      M. Kuzuhara
    • Organizer
      HETECH 2010
    • Place of Presentation
      Greece
    • Data Source
      KAKENHI-PROJECT-22560327
  • [Presentation] Comparative hightemperature DC characterization of HEMTs with GaN and AlGaN channel layers2010

    • Author(s)
      M. Hatano, N. Kunishio, H. Chikaoka, J. Yamazaki, Z. B. Makhzani, N. Yafune, K. Sakuno, S. Hashimoto, K. Akita, Y. Yamamoto, and M. Kuzuhara
    • Organizer
      CS-MANTECH
    • Place of Presentation
      Portland
    • Data Source
      KAKENHI-PROJECT-22560327
  • [Presentation] Temperature Characterization of GaN and AlGaN-based HEMTs (invited)2010

    • Author(s)
      M. Kuzuhara
    • Organizer
      International Workshop on Nitride Semiconductors (IWN2010)
    • Place of Presentation
      Tampa
    • Data Source
      KAKENHI-PROJECT-22560327
  • [Presentation] High-temperature GaN and Al GaN-based HEMTs(invited)2010

    • Author(s)
      Masaaki Kuzuhara
    • Organizer
      Internationa Workshop on Nitride Semiconductors(IWN2011)
    • Place of Presentation
      アメリカ(フロリダ)
    • Year and Date
      2010-09-21
    • Data Source
      KAKENHI-PROJECT-22560327
  • [Presentation] Remarkable increase in 2DEG density by annealing AlGaN/GaN heterostructures deposited with Ti/Al

    • Author(s)
      T. Kojima, H. Tokuda, and M. Kuzuhara
    • Organizer
      Int'l Symposium on Compound Semiconductors 2013
    • Place of Presentation
      Kobe, Japan
    • Data Source
      KAKENHI-PROJECT-24560399
  • 1.  Asubar Joel (10574220)
    # of Collaborated Projects: 6 results
    # of Collaborated Products: 106 results
  • 2.  YAMAMOTO Akio (90210517)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 6 results
  • 3.  HASHIMOTO Akihiro (10251985)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 4.  TOKUDA Hirokuni (10625932)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 23 results
  • 5.  只友 一行 (10379927)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 5 results
  • 6.  分島 彰男 (80588575)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 1 results
  • 7.  FUKUI Kazutoshi (80156752)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 8.  SHIOJIMA Kenji (70432151)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 9.  谷田部 然治 (00621773)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 10.  NAKAMURA Yusui
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 1 results

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