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Taniyasu Yoshitaka  谷保 芳孝

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TANIYASU Yoshitaka  谷保 芳孝

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Researcher Number 20393738
Affiliation (Current) 2025: 日本電信電話株式会社NTT物性科学基礎研究所, 多元マテリアル創造科学研究部, 上席特別研究員
Affiliation (based on the past Project Information) *help 2023 – 2024: 日本電信電話株式会社NTT物性科学基礎研究所, 多元マテリアル創造科学研究部, 上席特別研究員
2015 – 2016: 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 主幹研究員
2014: 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 主任研究員
2013: 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 特別研究員
2009: NTT Basic Research Laboratories, 機能物質科学研究部, 主任研究員
2007 – 2008: NTT Basic Research Laboratories, 機能物質科学研究部, 研究主任
Review Section/Research Field
Principal Investigator
Crystal engineering / Applied materials science/Crystal engineering
Except Principal Investigator
Broad Section D
Keywords
Principal Investigator
紫外 / 窒化物半導体 / 半導体物性 / 結晶成長 / 発光デバイス / 発光ダイオード / A1N / 光物性 / 先端機能デバイス / 結晶工学 … More
Except Principal Investigator
… More 共振器 / フォノニック結晶 / マグノメカニクス / ナノテクノロジー / オプトメカニクス / スピントロニクス / ナノメカニクス / マグノフォノニクス Less
  • Research Projects

    (3 results)
  • Research Products

    (89 results)
  • Co-Researchers

    (9 People)
  •  Ultrahigh-speed magnophononic resonator devices

    • Principal Investigator
      山口 浩司
    • Project Period (FY)
      2023 – 2027
    • Research Category
      Grant-in-Aid for Scientific Research (S)
    • Review Section
      Broad Section D
    • Research Institution
      NTT Basic Research Laboratories
  •  Research on AlN-based heterostructure growth and UV light-emitting devicesPrincipal Investigator

    • Principal Investigator
      Taniyasu Yoshitaka
    • Project Period (FY)
      2013 – 2016
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Crystal engineering
    • Research Institution
      NTT Basic Research Laboratories
  •  Optical characterization of AlN p-n junction diodePrincipal Investigator

    • Principal Investigator
      TANIYASU Yoshitaka
    • Project Period (FY)
      2007 – 2009
    • Research Category
      Grant-in-Aid for Young Scientists (A)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      NTT Basic Research Laboratories

All 2024 2023 2017 2016 2015 2014 2013 2010 2009 2008 2007

All Journal Article Presentation Book Patent

  • [Book] 平成21年度光技術動向調査報告書 第1.5.1節 紫外LED2010

    • Author(s)
      谷保芳孝
    • Total Pages
      4
    • Publisher
      財団法人光産業技術振興協会
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Book] 紫外LED(平成21年度光技術動向調査報告書, 第1.5.1節)2010

    • Author(s)
      谷保芳孝
    • Publisher
      財団法人光産業技術振興協会
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Journal Article] Surface morphology control of nonpolar m-plane AlN homoepitaxial layers by flow-rate modulation epitaxy2017

    • Author(s)
      J. Nishinaka, Y. Taniyasu, T. Akasaka, and K. Kumakura
    • Journal Title

      Physica Status Solidi (b)

      Volume: 254 Issue: 2 Pages: 1600545-1600545

    • DOI

      10.1002/pssb.201600545

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Journal Article] Heteroepitaxial growth of single-domain cubic boron nitride (c-BN) films by ion-beam-assisted MBE2017

    • Author(s)
      K. Hirama, Y. Taniyasu, S. Karimoto, H Yamamoto and K. Kumakura
    • Journal Title

      Applied Physics Express

      Volume: 10 Issue: 3 Pages: 035501-035501

    • DOI

      10.7567/apex.10.035501

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Journal Article] 窒化物半導体/ダイヤモンド ヘテロ構造の成長とその応用2016

    • Author(s)
      平間一行, 谷保芳孝, 嘉数誠, 山本秀樹, 熊倉一英
    • Journal Title

      NEW DIAMOND

      Volume: 122 Pages: 2-9

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Journal Article] イオンビームアシストMBE法による立方晶BN(c-BN)薄膜のヘテロエピタキシャル成長2016

    • Author(s)
      平間一行、谷保芳孝、山本秀樹、熊倉一英
    • Journal Title

      応用物理

      Volume: 85 Pages: 306-310

    • NAID

      130007715307

    • Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Journal Article] 無極性AlN系深紫外LEDの進展と展望2015

    • Author(s)
      谷保 芳孝、奥村 宏典、西中 淳一、熊倉 一英、山本 秀樹
    • Journal Title

      OPTRONICS

      Volume: 11 Pages: 120-124

    • Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Journal Article] 非極性面AlN 系深紫外LED2014

    • Author(s)
      谷保芳孝、ライアン バナル、山本秀樹
    • Journal Title

      日本結晶成長学会誌

      Volume: 41 Pages: 33-39

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Journal Article] Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy2014

    • Author(s)
      K.Hirama, Y. Taniyasu, S. Karimoto, Y. Krockenberger, and H. Yamamoto
    • Journal Title

      Applied Physics Letters

      Volume: 104 Issue: 9

    • DOI

      10.1063/1.4867353

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Journal Article] Deep-ultraviolet light emission properties of nonpolar M-plane AlGaN quantum wells2014

    • Author(s)
      (1)B. Ryan, Y. Taniyasu, and H. Yamamoto
    • Journal Title

      Applied Physics Letters

      Volume: 105 Issue: 5 Pages: 053104-053104

    • DOI

      10.1063/1.4892429

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Journal Article] Surface 210-nm light emission from an AlN p-n junction light-emitting diode enhanced by A-plane growth orientation2010

    • Author(s)
      Y. Taniyasu, M. Kasu
    • Journal Title

      Applied Physics Letters Vol.96

      Pages: 221110-221110

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Journal Article] Improved Emission Efficiency of 210-nm Deep-ultraviolet Aluminum Nitride Light-emitting Diode2010

    • Author(s)
      Y. Taniyasu, M. Kasu
    • Journal Title

      NTT Technical Review (掲載予定)

    • Data Source
      KAKENHI-PROJECT-19686003
  • [Journal Article] AlNの光電子物性と波長210nm発光ダイオード2010

    • Author(s)
      谷保芳孝、嘉数誠
    • Journal Title

      応用電子物性分科会誌 16巻、第2号

      Pages: 57-62

    • Data Source
      KAKENHI-PROJECT-19686003
  • [Journal Article] 波長210nm遠紫外発光ダイオードの高効率化2010

    • Author(s)
      谷保芳孝、嘉数誠
    • Journal Title

      NTT技術ジャーナル 6巻

      Pages: 40829-40829

    • Data Source
      KAKENHI-PROJECT-19686003
  • [Journal Article] Photoluminescence of highly excited AlN: Biexcitons and exciton-exciton scattering2009

    • Author(s)
      R.A.R. Leute, M. Feneberg, R. Sauer, K. Thonke, S.B. Thapa, F. Scholz, Y. Taniyasu, M. Kasu
    • Journal Title

      Applied Physics Letters Vol.95

      Pages: 31903-31903

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Journal Article] Aluminum nitride deep-ultraviolet light-emitting p-n junction diodes2008

    • Author(s)
      Y. Taniyasu, M. Kasu
    • Journal Title

      Diamond & Related Materials Vol.17

      Pages: 1273-1277

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Journal Article] Aluminum nitride deep-ultraviolet light-emitting p-n junction diodes2008

    • Author(s)
      Y. Taniyasu and M. Kasu
    • Journal Title

      Diamond & Related Materials 17

      Pages: 1273-1277

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Journal Article] Radiation and polarization properties of free-exciton emission from AlN (0001) surface2007

    • Author(s)
      Y. Taniyasu, M. Kasu, T. Makimoto
    • Journal Title

      Applied Physics Letters Vol.90

      Pages: 261911-261911

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Journal Article] 窒化アルミニウム(aln)発光ダイオード2007

    • Author(s)
      谷保芳孝
    • Journal Title

      化学と工業 8巻

      Pages: 783-785

    • Data Source
      KAKENHI-PROJECT-19686003
  • [Journal Article] Radiation and polarization properties of free-exciton emission from AIN(0001)surface2007

    • Author(s)
      Y.Taniyasu
    • Journal Title

      Applied Physics Letters 90

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Journal Article] 窒化アルミニウム(AlN)発光ダイオード2007

    • Author(s)
      谷保 芳孝
    • Journal Title

      化学と工業 8

      Pages: 783-785

    • Data Source
      KAKENHI-PROJECT-19686003
  • [Patent] 発光素子2015

    • Inventor(s)
      平間一行, 谷保芳孝, 狩元慎一, 山本秀樹
    • Industrial Property Rights Holder
      平間一行, 谷保芳孝, 狩元慎一, 山本秀樹
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2015-032976
    • Filing Date
      2015-02-23
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] Recent progress on AlN-based ultra-wide-bandgap semiconductor devices2024

    • Author(s)
      Yoshitaka Taniyasu, Masanobu Hiroki, Kazuhide Kumakura
    • Organizer
      16th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2024)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23H05463
  • [Presentation] AlN/n-SiC バルク音響共振器のミリ波帯動作2023

    • Author(s)
      黒子 めぐみ、畑中 大樹、太田 竜一、山口 浩司、谷保 芳孝、岡本 創
    • Organizer
      第84回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-23H05463
  • [Presentation] Demonstration of an acoustic resonator exceeding 40 GHz2023

    • Author(s)
      Megumi Kurosu, Daiki Hatanaka, Hiroshi Yamaguchi, Yoshitaka Taniyasu, and Hajime Okamoto
    • Organizer
      36th International Microprocesses and Nanotechnology, Conference,2023
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23H05463
  • [Presentation] m面AlN基板上に成長したAlGaNのSiドーピングによる格子緩和抑制2017

    • Author(s)
      西中 淳一, 谷保 芳孝, 熊倉 一英
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県横浜市)
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] 立方晶窒化ホウ素(c -BN)薄膜のヘテロエピタキシャル成長2016

    • Author(s)
      平間一行, 谷保芳孝, 狩元慎一, 山本秀樹, 熊倉一英
    • Organizer
      日本学術振興会ワイドギャップ半導体光・電子デバイス第162委員会・第98回研究会
    • Place of Presentation
      主婦会館プラザエフ(東京都千代田区)
    • Invited
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] 無極性m面AlN基板上へのAlNの流量変調エピタキシ2016

    • Author(s)
      西中 淳一、谷保 芳孝、赤坂 哲也、熊倉 一英
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学(東京都・目黒区)
    • Year and Date
      2016-03-22
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] イオンビームアシストMBE法による準安定相窒化ホウ素(c-BN)薄膜の成長2016

    • Author(s)
      平間一行, 谷保芳孝,山本秀樹, 熊倉一英
    • Organizer
      東京大学生産技術研究所光電子融合研究センター公開シンポジウム
    • Place of Presentation
      東京大学(東京都目黒区)
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] Flow-rate Modulation Epitaxy of Nonpolar m-plane AlN Homoepitaxial Layers Grown on AlN Bulk Substrates2016

    • Author(s)
      J. Nishinaka, Y. Taniyasu, T. Akasaka, and K. Kumakura
    • Organizer
      The 43rd International Symposium on Compound Semiconductors (ISCS)
    • Place of Presentation
      Toyama International Conference Center(富山県富山市)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] c-BN薄膜のイオンビームアシストMBE成長における基板へのバイアス電圧印加の効果2016

    • Author(s)
      平間一行、谷保芳孝、山本秀樹、熊倉一英
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学(東京都・目黒区)
    • Year and Date
      2016-03-20
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] 無極性m面AlN基板上に成長したAlGaNの格子緩和機構2016

    • Author(s)
      西中 淳一, 谷保 芳孝, 熊倉 一英
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県新潟市)
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] c-BN(001)薄膜の結晶性に及ぼすイオン照射の影響2016

    • Author(s)
      平間一行, 谷保芳孝,山本秀樹, 熊倉一英
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県新潟市)
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] Role of Ar+ ion irradiation in plasma-assisted MBE growth of c-BN thin films2015

    • Author(s)
      K. Hirama, Y. Taniyasu, S. Karimoto, and H. Yamamoto
    • Organizer
      The 11th International Conference on Nitride Semiconductors (ICNS-11)
    • Place of Presentation
      Beijing (China)
    • Year and Date
      2015-09-01
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] P-Type Doping Control of Mg-doped AlGaN for deep-UV LEDs2015

    • Author(s)
      H. Okumura, H. Yamamoto, and Y. Taniyasu
    • Organizer
      42nd International Symposium on Compound Semiconductors
    • Place of Presentation
      Santa Barbara (USA)
    • Year and Date
      2015-06-30
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] Progress in AIN-Based Deep UV Emitters and Lasers2015

    • Author(s)
      Y. Taniyasu
    • Organizer
      IEEE Photonics Society (IPC).
    • Place of Presentation
      Reston (USA)
    • Year and Date
      2015-10-06
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] ダイヤモンド/立方晶窒化ホウ素(c-BN)薄膜ヘテロ構造成長2015

    • Author(s)
      平間一行, 谷保芳孝, 狩元慎一, 山本秀樹
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2015-03-11
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] 単結晶c-BN薄膜の内部応力に及ぼすイオン照射の影響2015

    • Author(s)
      平間一行、谷保芳孝、狩元慎一、山本秀樹、熊倉 一英
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県・名古屋市)
    • Year and Date
      2015-09-15
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] MOVPE法によるSiC基板上の無極性面高Al組成AlGaN成長2015

    • Author(s)
      奥村宏典、谷保芳孝、山本秀樹
    • Organizer
      第62回応用物理学会春季学術講演
    • Place of Presentation
      東海大学
    • Year and Date
      2015-03-12
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] Key Parameters for Growth of Single Crystal Cubic BN by Ion-Beam-Assisted MBE2015

    • Author(s)
      K. Hirama, Y. Taniyasu, S. Karimoto, and H. Yamamoto
    • Organizer
      2015 MRS Spring Meeting
    • Place of Presentation
      San Francisco (USA)
    • Year and Date
      2015-04-09
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] Growth of Diamond/c-BN Thin-film Heterostructures2015

    • Author(s)
      K. Hirama, Y. Taniyasu, S. Karimoto, and H. Yamamoto
    • Organizer
      New Diamond and Nano Carbons Conference (NDNC 2015)
    • Place of Presentation
      Shizuoka GRANSHIP (Japan・Shizuoka)
    • Year and Date
      2015-05-25
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] 立方晶窒化ホウ素(c-BN)薄膜のMBE成長におけるイオン照射の効果2015

    • Author(s)
      平間一行, 谷保芳孝, 狩元慎一, 山本秀樹
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2015-03-11
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] 準安定相窒化ホウ素(立方晶BN)薄膜のイオンビームアシストMBE成長2015

    • Author(s)
      平間一行、谷保芳孝、狩元慎一、山本秀樹、熊倉一英
    • Organizer
      第45回結晶成長国内会議(NCCG-45)
    • Place of Presentation
      北海道大学(北海道・札幌市)
    • Year and Date
      2015-10-19
    • Invited
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] 高Al組成p-AlGaN層のMgドーピング特性2014

    • Author(s)
      奥村 宏典、谷保 芳孝、山本 秀樹
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-18
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] Exciton-phonon interaction in AlGaN ternary alloys2014

    • Author(s)
      Ryan Banal、谷保 芳孝、山本 秀樹
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-20
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] 単結晶立方晶窒化ホウ素(c-BN)のイオンビームアシストMBE成長機構2014

    • Author(s)
      平間 一行、谷保 芳孝、狩元 慎一、山本 秀樹
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] M面AlGaN多重量子井戸LEDの放射特性2014

    • Author(s)
      Ryan Banal、谷保 芳孝、山本 秀樹
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] Nonpolar M-plane AlGaN Deep-UV LEDs2014

    • Author(s)
      R. Banal, Y. Taniyasu, and H. Yamamoto
    • Organizer
      Conference on LED and Its Industrial Application ’14
    • Place of Presentation
      横浜
    • Year and Date
      2014-04-23
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] イオンビームアシストMBEによる立方晶BN(111)薄膜の高品質化2014

    • Author(s)
      平間 一行、谷保 芳孝、狩元 慎一、山本 秀樹
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-18
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] Nitride/diamond heterostructure systems - from growth to devices-2014

    • Author(s)
      K. Hirama, Y. Taniyasu, S. Karimoto, Y. Krockenberger, M. Kasu, and H. Yamamoto
    • Organizer
      International Union of Materials Research Societies-The IUMRS International Conference in Asia 2014
    • Place of Presentation
      福岡
    • Year and Date
      2014-08-27
    • Invited
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] Nonpolar AlGaN Quantum Well Deep-UV LEDs2014

    • Author(s)
      R. Banal, Y. Taniyasu, and H. Yamamoto
    • Organizer
      The 5th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Atlanta, USA
    • Year and Date
      2014-05-20
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] Growth of Single-Crystal Cubic BN by Ion-Beam-Assisted MBE2014

    • Author(s)
      K. Hirama, Y. Taniyasu, S. Karimoto, Y. Krockenberger, and H. Yamamoto
    • Organizer
      The 5th International Symposium on Growth of III-Nitrides
    • Place of Presentation
      Atlanta, USA
    • Year and Date
      2014-05-18
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] 非極性面AlN系深紫外LEDの開発2014

    • Author(s)
      谷保 芳孝、Ryan Banal、山本 秀樹
    • Organizer
      日本学術振興会第145委員会第137回研究会
    • Place of Presentation
      明治大学
    • Invited
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] 立方晶窒化ホウ素(cBN)のイオンビームアシストMBE成長2013

    • Author(s)
      平間 一行, 狩元 慎一, Krockenberger Yoshiharu, 谷保 芳孝, 山本 秀樹
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] AlN系紫外LEDの研究開発2013

    • Author(s)
      谷保芳孝
    • Organizer
      日本機械学会
    • Place of Presentation
      岡山大学
    • Invited
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] AlN系ヘテロ構造のエピタキシャル成長と深紫外LED応用2013

    • Author(s)
      谷保 芳孝、Ryan Banal、平間 一行、山本 秀樹
    • Organizer
      日本結晶成長学会結晶成長国内会議
    • Place of Presentation
      長野市諸生涯学習センター
    • Invited
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] Non-polar M-plane AlGaN Multiple Quantum Well Light-Emitting Diode2013

    • Author(s)
      B. Ryan, Y. Taniyasu, and H. Yamamoto
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] Enhanced Deep-UV Light Emission from AlGaN Quantum Wells by Non-polar Plane2013

    • Author(s)
      B. Ryan, Y. Taniyasu, and H. Yamamoto
    • Organizer
      The 40th International Symposium on Compound Semiconductor
    • Place of Presentation
      Kobe Convention Center
    • Data Source
      KAKENHI-PROJECT-25246022
  • [Presentation] AlNの光電子物性と波長210nm発光ダイオード2010

    • Author(s)
      谷保芳孝、嘉数誠
    • Organizer
      応用電子物性分科会研究例会
    • Place of Presentation
      大阪大学
    • Year and Date
      2010-05-21
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] p型MgドープAINおよび高A1組成AlGaNの伝導制御2010

    • Author(s)
      谷保芳孝
    • Organizer
      2010年春季第57回応用物理学会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-18
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] 【招待講演】AINの光電子物性と波長210nm発光ダイオード2010

    • Author(s)
      谷保芳孝
    • Organizer
      応用電子物性分科会研究例会
    • Place of Presentation
      大阪大学
    • Year and Date
      2010-05-21
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] p型MgドープAlNおよび高Al組成AlGaNの伝導制御2010

    • Author(s)
      谷保芳孝、嘉数誠
    • Organizer
      2010年春季第57回応用物理学会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-18
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] Y. Taniyasu and M. Kasu, Recent progress in AlN deep-UV light-emitting diodes: physics and device structure, SPIE Photonic West 20092009

    • Author(s)
      Y. Taniyasu, M. Kasu
    • Organizer
      Gallium Nitride Materials and Devices IV
    • Place of Presentation
      San Jose, USA
    • Year and Date
      2009-01-29
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] a面AIN発光ダイオードからの波長210nm遠紫外発光2009

    • Author(s)
      谷保芳孝
    • Organizer
      2009年秋季第70回応用物理学会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] Non-c-plane 210-nm AIN light-emitting diode2009

    • Author(s)
      Y.Taniyasu
    • Organizer
      The 8th International Conference on Nitride semiconductors (ICNS-8)
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-22
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] High excitation photoluminescence bands in AlN2009

    • Author(s)
      R. Leute, M. Feneberg, K. Thonke, R. Sauer, S. Thapa, F. Scholz, Y. Taniyasu, M. Kasu
    • Organizer
      e-MRS 2009 Spring Meeting
    • Place of Presentation
      Strasbourg, France
    • Year and Date
      2009-06-08
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] High excitation photoluminescence studies on epitaxially grown AlN layers2009

    • Author(s)
      R. Leute, M. Feneberg, K. Thonke, R. Sauer, S. Thapa, F. Scholz, Y. Taniyasu, M. Kasu
    • Organizer
      Deutsche Physikalische Gesellschaft conference (DPG2009)
    • Place of Presentation
      Dresden, Germany
    • Year and Date
      2009-03-24
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] Recent progress in AlN deep-UV light-emitting diodes: physics and device structure2009

    • Author(s)
      Y. Taniyasu
    • Organizer
      SPIE Photonic West 2009, "Gallium Nitride Materials and Devices IV"
    • Place of Presentation
      San Jose, USA
    • Year and Date
      2009-01-29
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] Non-c-plane 210-nm AlN light-emitting diode2009

    • Author(s)
      Y. Taniyasu, M. Kasu
    • Organizer
      The 8th International Conference on Nitride semiconductors (ICNS-8)
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-22
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] a面AlN発光ダイオードからの波長210nm遠紫外発光2009

    • Author(s)
      谷保芳孝、嘉数誠
    • Organizer
      2009年秋季第70回応用物理学会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] Increase in free-exciton emission intensity from AlN by using m-plane2008

    • Author(s)
      Y. Taniyasu, M. Kasu
    • Organizer
      International Workshop on Nitride semiconductors (IWN 2008)
    • Place of Presentation
      Montreux, Switzerland
    • Year and Date
      2008-10-09
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] 櫛形メサ構造によるaln遠紫外発光ダイオードの発光強度の増大2008

    • Author(s)
      谷保芳孝、嘉数誠
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学、春日井
    • Year and Date
      2008-09-05
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] Influence of dislocations on AlN deep-UV light-emitting diodes2008

    • Author(s)
      Y. Taniyasu
    • Organizer
      The 4th Asian Conference on Crystal Growth and Crystal Technology (CGCT4)
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      2008-05-24
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] 櫛形メサ構造によるAlN遠紫外発光ダイオードの発光強度の増大2008

    • Author(s)
      Y. Taniyasu
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部大学、春日井
    • Year and Date
      2008-09-05
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] m面alnによるバンド端発光強度の増大2008

    • Author(s)
      谷保芳孝、嘉数誠
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学、船橋
    • Year and Date
      2008-03-29
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] Influence of dislocations on AlN deep-UV light-emitting diodes2008

    • Author(s)
      Y. Taniyasu, M. Kasu
    • Organizer
      The 4th Asian Conference on Crystal Growth and Crystal Technology (CGCT4)
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      2008-05-24
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] Increase in free-exciton emission intensity from AlN by using m-plane2008

    • Author(s)
      Y. Taniyasu
    • Organizer
      International Workshop on Nitride semiconductors (IWN 2008)
    • Place of Presentation
      Monteux, Switzerland
    • Year and Date
      2008-10-09
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] AIN deep-ultraviolet light-emitting diodes2007

    • Author(s)
      Y.Taniyasu
    • Organizer
      14th Semiconducting and Insulating MaterialsConferences(SIMC XIV)
    • Place of Presentation
      University of Arkansas,Arkansas,USA
    • Year and Date
      2007-05-18
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] Deep-UV light emitting diodes by MOVPE2007

    • Author(s)
      Y.Taniyasu
    • Organizer
      European Workshop on Metal Organic Vapor PhaseEpitaxy(EW-MOVPE)
    • Place of Presentation
      SUZU hotel,Bratislava,Slovakia
    • Year and Date
      2007-06-05
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] Deep-UV light emitting diodes by MOVPE2007

    • Author(s)
      Y. Taniyasu, M. Kasu, T. Makimoto
    • Organizer
      European Workshop on Metal Organic Vapor Phase Epitaxy (EW-MOVPE)
    • Place of Presentation
      SUZU hotel, Bratislava, Slovakia
    • Year and Date
      2007-06-05
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] AlN deep-UV light-emitting diodes2007

    • Author(s)
      Y. Taniyasu, M. Kasu, T. Makimoto
    • Organizer
      18th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides (Diamond 2007)
    • Place of Presentation
      Maritim hotel, Berlin, Germany
    • Year and Date
      2007-09-13
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] 負の結晶場分裂エネルギーに起因したAlN発光ダイオードの偏光特性2007

    • Author(s)
      谷保 芳孝
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学、札幌
    • Year and Date
      2007-09-08
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] AlN:pnドーピングと遠紫外LED2007

    • Author(s)
      谷保 芳孝
    • Organizer
      第26回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖、大津
    • Year and Date
      2007-07-06
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] aln:pnドーピングと遠紫外l ed2007

    • Author(s)
      谷保芳孝、嘉数誠、牧本俊樹
    • Organizer
      第26回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖、大津
    • Year and Date
      2007-07-06
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] AIN deep-UV light-emitting diodes2007

    • Author(s)
      Y.Taniyasu
    • Organizer
      18th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, andNitrides (Diamond 2007)
    • Place of Presentation
      Maritim hotel,Berlin,Germany
    • Year and Date
      2007-09-13
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] 負の結晶場分裂エネルギーに起因したaln発光ダイオードの偏光特性2007

    • Author(s)
      谷保芳孝、嘉数誠、牧本俊樹
    • Organizer
      第68回応用物理学会学術講演会
    • Place of Presentation
      北海道工業大学、札幌
    • Year and Date
      2007-09-08
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] aln深紫外ledの現状と展望2007

    • Author(s)
      谷保芳孝、嘉数誠、牧本俊樹
    • Organizer
      応用物理学会関西支部主催セミナー「窒化物半導体のフロンティア」
    • Place of Presentation
      グランキューブ大阪/大阪国際会議場、大阪
    • Year and Date
      2007-06-18
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] AlN deep-ultraviolet light-emitting diodes2007

    • Author(s)
      Y. Taniyasu, M. Kasu, T. Makimoto
    • Organizer
      14th Semiconducting and Insulating Materials Conferences (SIMC XIV)
    • Place of Presentation
      University of Arkansas, Arkansas, USA
    • Year and Date
      2007-05-18
    • Data Source
      KAKENHI-PROJECT-19686003
  • [Presentation] AlN深紫外LEDの現状と展望2007

    • Author(s)
      谷保 芳孝
    • Organizer
      応用物理学会関西支部主催セミナー「窒化物半導体のフロンティア」
    • Place of Presentation
      グランキューブ大阪/大阪国際会議場、大阪
    • Year and Date
      2007-06-18
    • Data Source
      KAKENHI-PROJECT-19686003
  • 1.  熊倉 一英 (00393736)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 12 results
  • 2.  平間 一行 (50434329)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 14 results
  • 3.  山本 秀樹 (70393733)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 34 results
  • 4.  山口 浩司 (60374071)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results
  • 5.  林 将光 (70517854)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 6.  畑中 大樹 (60601771)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results
  • 7.  黒子 めぐみ (90898587)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results
  • 8.  浅野 元紀 (60867224)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 9.  岡本 創 (20350465)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results

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