Furuta Mamoru 古田守

… Alternative Names

古田守フルタマモル

FURUTA MAMORU 古田守

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Researcher Number	20412439
Other IDs
Affiliation (Current)	2025: 高知工科大学, 理工学群, 教授
Affiliation (based on the past Project Information) *help	2025: 高知工科大学, 理工学群, 教授 2022: 高知工科大学, 環境理工学群, 教授 2016 – 2018: 高知工科大学, 環境理工学群, 教授 2013: 高知工科大学, 工学部, 教授 2012: 高知工科大学, 環境理工学群, 教授 2011: 高知工科大学, ナノテクノロジー研究所, 教授
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / Basic Section 21060:Electron device and electronic equipment-related / Basic Section 21050:Electric and electronic materials-related
Keywords	Principal Investigator 薄膜トランジスタ / 酸化物半導体 / フレキシブルデバイス / イメージセンサー / イメージセンサ / 電子・電気材料 / 固相結晶化 / 酸化インジウム / ディスプレイ / フレキシブル電子デバイス … More / 信頼性 / 低温プロセス / デバイスシミュレーション / 透明回路 / 半導体物性 / 先端機能デバイス Less

低温固相結晶化による疑似単結晶酸化インジウムトランジスタの創成Principal Investigator
- Principal Investigator
  
  古田守
- Project Period (FY)
  2025 – 2027
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Kochi University of Technology
水素による透明金属酸化インジウムの半導体転移と固相結晶化フレキシブルトランジスタPrincipal Investigator
- Principal Investigator
  
  古田守
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Kochi University of Technology
Flexible and transparent circuits for stacked image sensor applicationPrincipal Investigator
- Principal Investigator
  
  FURUTA MAMORU
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kochi University of Technology
Zinc oxide transparent transistor and its application to stacked image sensorPrincipal Investigator
- Principal Investigator
  
  FURUTA MAMORU
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Kochi University of Technology

All 2019 2018 2017 2016 2014 2013 2012 2011

All Journal Article Presentation Book

[Book] 応用物理, "ミスト化学気相成長法を用いた大気圧薄膜形成と酸化物機能デバイスのグリーンプロセス化"2014
- Author(s)
  川原村敏幸, 古田守
- Total Pages
  5
- Publisher
  応用物理学会(2014年9月号掲載決定)
- Data Source
  KAKENHI-PROJECT-23560408
[Book] 月刊ディスプレイ(2013年10月号), "溶液プロセスによる酸化物半導体TFTの大気圧形成技術"2013
- Author(s)
  古田守, 川原村敏幸
- Publisher
  テクノタイムス社
- Data Source
  KAKENHI-PROJECT-23560408
[Book] 月刊ディスプレイ　2013年10月号2013
- Author(s)
  古田　守、川原村　敏幸
- Publisher
  (株)テクノタイムズ社
- Data Source
  KAKENHI-PROJECT-23560408
[Journal Article] Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors2019
- Author(s)
  Dapeng Wang and Mamoru Furuta
- Journal Title
  
  Beilstein Journal of Nanotechnology
  
  Volume: 10 Pages: 1125-1130
- DOI
  10.3762/bjnano.10.112
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06309
[Journal Article] Collaborative optimization of thermal budget annealing and active layer defect content enhancing electrical characteristics and bias stress stability in InGaZnO thin-film transistors2019
- Author(s)
  Wang Dapeng、Zhao Wenjing、Furuta Mamoru
- Journal Title
  
  Journal of Physics D: Applied Physics
  
  Volume: 52 Issue: 23 Pages: 235101-235101
- DOI
  10.1088/1361-6463/ab10fc
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06309
[Journal Article] Heterojunction channel engineering to enhance performance and reliability of amorphous In?Ga?Zn?O thin-film transistors2019
- Author(s)
  Furuta Mamoru、Koretomo Daichi、Magari Yusaku、Aman S G Mehadi、Higashi Ryunosuke、Hamada Syuhei
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: 9 Pages: 090604-090604
- DOI
  10.7567/1347-4065/ab1f9f
- NAID
  210000155922
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16K06309
[Journal Article] Memristive characteristic of an amorphous Ga-Sn-O thin-film device2019
- Author(s)
  Sugisaki Sumio、Matsuda Tokiyoshi、Uenuma Mutsunori、Nabatame Toshihide、Nakashima Yasuhiko、Imai Takahito、Magari Yusaku、Koretomo Daichi、Furuta Mamoru、Kimura Mutsumi
- Journal Title
  
  Scientific Reports
  
  Volume: 9 Issue: 1 Pages: 2757-2757
- DOI
  10.1038/s41598-019-39549-9
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16K06733, KAKENHI-PROJECT-16K06309
[Journal Article] High mobility sputtered InSb film by blue laser diode annealing2019
- Author(s)
  Koswaththage C. J.、Higashizako T.、Okada T.、Sadoh T.、Furuta M.、Bae B. S.、Noguchi T.
- Journal Title
  
  AIP Advances
  
  Volume: 9 Issue: 4
- DOI
  10.1063/1.5087235
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16K06309
[Journal Article] Improvement in bias-stress and long-term stabilities for in-Ga-Zn-O thin-film transistors using solution-process-compatible polymeric gate insulator2019
- Author(s)
  Kwak Sol-Mi、Kim Hyeong-Rae、Jang Hye-Won、Yang Ji-Hee、Mamoru Furuta、Yoon Sung-Min
- Journal Title
  
  Organic Electronics
  
  Volume: 71 Pages: 7-13
- DOI
  10.1016/j.orgel.2019.04.040
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06309
[Journal Article] Influence of a SiO2 passivation on electrical properties and reliability of In-W-Zn-O thin-film transistor2018
- Author(s)
  Koretomo Daichi、Hashimoto Yuta、Hamada Shuhei、Miyanaga Miki、Furuta Mamoru
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: 1 Pages: 018003-018003
- DOI
  10.7567/1347-4065/aae895
- NAID
  210000135181
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06309
[Journal Article] Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses2018
- Author(s)
  Wang Dapeng、Zhao Wenjing、Li Hua、Furuta Mamoru
- Journal Title
  
  Materials
  
  Volume: 11 Issue: 4 Pages: 559-559
- DOI
  10.3390/ma11040559
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06309
[Journal Article] Influence of Deposition Temperature and Source Gas in PE-CVD for SiO2 Passivation on Performance and Reliability of In?Ga?Zn?O Thin-Film Transistors2018
- Author(s)
  Aman S. G. Mehadi、Koretomo Daichi、Magari Yusaku、Furuta Mamoru
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 65 Issue: 8 Pages: 3257-3263
- DOI
  10.1109/ted.2018.2841978
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06309
[Journal Article] Correlation between passivation film density and reliability of In-Ga-Zn-O thin-film transistors2018
- Author(s)
  Aman S. G. Mehadi、Furuta Mamoru
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 8 Pages: 088001-088001
- DOI
  10.7567/jjap.57.088001
- NAID
  210000149428
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06309
[Journal Article] Low-temperature (150 °C) activation of Ar+O2+H2-sputtered In-Ga-Zn-O for thin-film transistors2018
- Author(s)
  Aman S. G. Mehadi、Magari Yusaku、Shimpo Kenta、Hirota Yuya、Makino Hisao、Koretomo Daichi、Furuta Mamoru
- Journal Title
  
  Applied Physics Express
  
  Volume: 11 Issue: 8 Pages: 081101-081101
- DOI
  10.7567/apex.11.081101
- NAID
  210000136299
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06309
[Journal Article] Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses2018
- Author(s)
  Wang Dapeng、Furuta Mamoru
- Journal Title
  
  Beilstein Journal of Nanotechnology
  
  Volume: 9 Pages: 2573-2580
- DOI
  10.3762/bjnano.9.239
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06309
[Journal Article] (Invited) Low-Temperature Processed InGaZnO MES-FET for Flexible Device Applications2017
- Author(s)
  Furuta Mamoru、Magari Yusaku、Hashimoto Shinsuke、Hamada Kenichiro
- Journal Title
  
  ECS Transactions
  
  Volume: 79 Issue: 1 Pages: 43-48
- DOI
  10.1149/07901.0043ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06309
[Journal Article] Zinc tin oxide metal semiconductor field effect transistors and their improvement under negative bias (illumination) temperature stress2017
- Author(s)
  G. T. Dang, T. Kawaharamura, M. Furuta, and M. W. Allen
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 110 Issue: 7 Pages: 073502-073502
- DOI
  10.1063/1.4976196
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05421, KAKENHI-PROJECT-16F16373, KAKENHI-PROJECT-16K06309
[Journal Article] Carrier Generation Mechanism and Origin of Subgap States in Ar- and He-Plasma-Treated In?Ga?Zn?O Thin Films2017
- Author(s)
  Magari Yusaku、Makino Hisao、Furuta Mamoru
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 6 Issue: 8 Pages: Q101-Q107
- DOI
  10.1149/2.0031709jss
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16K06309
[Journal Article] Rare-metal-free high-performance Ga-Sn-O thin film transisitor2017
- Author(s)
  Tokiyoshi Matsuda, Kenta Umeda, Yuta Kato, Daiki Nishimoto, Mamoru Furuta, and Mutsumi Kimura,
- Journal Title
  
  Scientific Reports
  
  Volume: 7 Issue: 1 Pages: 44326-44326
- DOI
  10.1038/srep44326
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-26870717, KAKENHI-PROJECT-16K06733, KAKENHI-PROJECT-16K06309
[Journal Article] Influence of Interface Traps on the Electrical Properties of Oxide Thin-Film Transistors with Different Channel Thicknesses2017
- Author(s)
  Jiang Jing Xin、Wang Da Peng、Matsuda Tokiyoshi、Kimura Mutsumi、Liu Sheng Yang、Furuta Mamoru
- Journal Title
  
  Journal of Nano Research
  
  Volume: 46 Pages: 93-99
- DOI
  10.4028/www.scientific.net/jnanor.46.93
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06309
[Journal Article] Silver Oxide Schottky Contacts and Metal Semiconductor Field-Effect Transistors on SnO2 thin films2016
- Author(s)
  Giang T. Dang, Takayuki Uchida, Toshiyuki Kawaharamura, Mamoru Furuta, Adam R. Hyndman, Rodrigo Martinez, Shizuo Fujita, Roger J. Reeves, Martin W. Allen
- Journal Title
  
  Applied Physics Express
  
  Volume: 9 Issue: 4 Pages: 041101-041101
- DOI
  10.7567/apex.9.041101
- NAID
  210000137840
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H05421, KAKENHI-PROJECT-15J07829, KAKENHI-PROJECT-16K06309
[Journal Article] Low-Temperature Processed and Self-Aligned InGaZnO Thin-Film Transistor with an Organic Gate Insulator for Flexible Device Applications2016
- Author(s)
  Mamoru Furuta, Tatsuya Toda, Gengo Tatsuoka and Yusaku Magari
- Journal Title
  
  ECS Transactions
  
  Volume: 75 Issue: 10 Pages: 117-122
- DOI
  10.1149/07510.0117ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06309
[Journal Article] Self-heating induced instability of oxide thin film transistors under dynamic stress2016
- Author(s)
  Kahori Kise, Mami N. Fujii, Satoshi Urakawa, Haruka Yamazaki, Emi Kawashima, Shigekazu Tomai, Koki Yano, Dapeng Wang, Mamoru Furuta, Yasuaki Ishikawa, and Yukiharu Uraoka
- Journal Title
  
  Applied Physics Letters
  
  Volume: 108 Issue: 2 Pages: 023501-023501
- DOI
  10.1063/1.4939861
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16K06309, KAKENHI-PROJECT-16H04332
[Journal Article] Suppression of Negative Gate Bias and Illumination Stress Degradation by Fluorine-Passivated In-Ga-Zn-O Thin-Film Transistors2016
- Author(s)
  Mamoru Furuta, Jingxin Jiang, Mai Phi Hung, Tatsuya Toda, Dapeng Wang and Gengo Tatsuoka
- Journal Title
  
  ECS Journal of Solid State aScience and Technology
  
  Volume: 5 Issue: 3 Pages: Q88-Q91
- DOI
  10.1149/2.0131603jss
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16K06309
[Journal Article] High-Performance Top-Gate and Self-Aligned InGaZnO Thin-Film Transistor Using Coatable Organic Insulators Fabricated at 150 °C2016
- Author(s)
  Tatsuya Toda, Gengo Tatsuoka, Yusaku Magari, and Mamoru Furuta
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 37 Issue: 8 Pages: 1006-1009
- DOI
  10.1109/led.2016.2582319
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06309
[Journal Article] Anomalous Increase in Field-Effect Mobility in InGaZnO Thin-Film Transistors Caused by Dry-Etching Damage Through Etch-Stop Layer2016
- Author(s)
  Daichi Koretomo, Tatsuya Toda, Tokiyoshi Matsuda, Mutsumi Kimura, and Mamoru Furuta
- Journal Title
  
  IEEE Transaction on Electron Devices
  
  Volume: 63 Issue: 7 Pages: 2785-2789
- DOI
  10.1109/ted.2016.2568280
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06309
[Journal Article] Low-Temperature Processed Metal-Semiconductor Field-Effect Transistor with In-Ga-Zn-O/AgOx Schottky Gate2016
- Author(s)
  Yusaku Magari, Shinsuke Hashimoto, Kenichiro Hamada and Mamoru Furuta
- Journal Title
  
  ECS Transactions
  
  Volume: 75 Issue: 10 Pages: 139-144
- DOI
  10.1149/07510.0139ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06309
[Journal Article] Image Sensor with Organic Photoconductive Films by Stacking Red/Green and Blue Components2016
- Author(s)
  T. Takagi, H. Seo,T. Sakai, H. Ohtake, M. Furuta
- Journal Title
  
  Electronic Imaging, Image Sensors and Imaging Systems 2016
  
  Volume: 4 Issue: 12 Pages: 1-4
- DOI
  10.2352/issn.2470-1173.2016.12.imse-264
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06309
[Journal Article] Investigation of Carrier Generation Mechanism in Fluorine-Doped n+-InGaZnO for Self-Aligned Thin-Film Transistors2016
- Author(s)
  Dapeng Wang, Jingxin Jiang, and Mamoru Furuta
- Journal Title
  
  Journal of Display Technology
  
  Volume: 12 Issue: 3 Pages: 258-262
- DOI
  10.1109/jdt.2015.2472981
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06309
[Journal Article] Suppression of degradation induced by negative gate bias and illumination stress in amorphous InGaZnO thin-film transistor by applying negative drain bias2014
- Author(s)
  D. Wang, M. Furuta, 他計5名(5番)
- Journal Title
  
  ACS applied Materials and Interfaces
  
  Volume: 6 Issue: 8 Pages: 5713-5718
- DOI
  10.1021/am500300g
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560408
[Journal Article] Negative bias illumination stress induced electron trapping at back-channel interface of InGaZnO thin-film transistor2014
- Author(s)
  M. P. Hung, M. Furuta, 他計4名(4番)
- Journal Title
  
  Electrochemical and Solid-State Letters
  
  Volume: 3(3) Issue: 3 Pages: Q13-Q16
- DOI
  10.1149/2.010403ssl
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560408
[Journal Article] Effect of drain bias on negative gate bias and illumination stress induced degradation in amorphous InGaZnO thin-film transistors2014
- Author(s)
  D. Wang, M.-P. Hung, J. Jiang, T. Toda, C. Li, and M. Furuta
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 Issue: 3S1 Pages: 03CC01-03CC01
- DOI
  10.7567/jjap.53.03cc01
- NAID
  210000143469
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560408, KAKENHI-PROJECT-24561060
[Journal Article] Low temperature deposition of SiOx insulator film with newly developed facing electrodes chemical vapor deposition2014
- Author(s)
  T. Matsuda, M. Furuta, T. Hiramatsu, H. Furuta, T. Kawaharamura, and T. Hirao
- Journal Title
  
  Vacuum
  
  Volume: 101 Pages: 189-192
- DOI
  10.1016/j.vacuum.2013.08.003
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560408
[Journal Article] High performance solution-processed InGaZnO thin-film Transistor fabricated by ozone-assisted atmospheric pressure mist deposition2014
- Author(s)
  M. Furuta, 他計5名(1番)
- Journal Title
  
  Journal of Display Technology (IEEE)
  
  Volume: (in-press) Issue: 11 Pages: 934-938
- DOI
  10.1109/jdt.2013.2294967
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560408
[Journal Article] Influence of Substrates on Formation of Zinc Oxide Nanostructures by a Novel Reducing Annealing Method2014
- Author(s)
  X. Li, C. Li, T. Kawaharamura, D. Wang, N. Nitta, M. Furuta, H. Furuta, and A. Hatta
- Journal Title
  
  Nanoscience and Nanotechnology Letters
  
  Volume: 6 Issue: 2 Pages: 174-180
- DOI
  10.1166/nnl.2014.1708
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560408, KAKENHI-PROJECT-24561060
[Journal Article] Ultrasonic-assisted mist chemical vapor deposition of II-oxide and related oxide compounds2014
- Author(s)
  Shizuo Fujita, Kentaro Kaneko, Takumi Ikenoue, Toshiyuki Kawaharamura and Mamoru Furuta
- Journal Title
  
  Physica status solidi (c)
  
  Volume: 未定 Issue: 7-8 Pages: 1225-1228
- DOI
  10.1002/pssc.201300655
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560408, KAKENHI-PROJECT-25286050
[Journal Article] Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect2013
- Author(s)
  S. Urakawa, M. Furuta, Y. Uraoka, 他計11名(8番)
- Journal Title
  
  Applie Physics letters
  
  Volume: 102 Issue: 5
- DOI
  10.1063/1.4790619
- NAID
  120005254613
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560408
[Journal Article] Thin-Film Transistors Using Uniform and Well-Aligned Single-Walled Carbon Nanotubes Channels by Dielectrophoretic Assembly2013
- Author(s)
  T. Toda, H. Furusawa, and M. Furuta
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 3S Pages: 03BB09-03BB09
- DOI
  10.7567/jjap.52.03bb09
- NAID
  210000141915
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560408
[Journal Article] Thin-Film Transistors Using Dielectrophoretic Assembly of Single-Walled Carbon Nanotubes2013
- Author(s)
  T. Toda, T. Kawaharamura, H. Furusawa, and M. Furuta
- Journal Title
  
  ECS Transaction
  
  Volume: 50 (8) Issue: 8 Pages: 223-228
- DOI
  10.1149/05008.0223ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560408
[Journal Article] Trap Densities in ZnO TFTs with SiNx/SiOx Stacked Gate Insulators Fabricated Using Several N2O Flow Rate during SiOx Deposition2013
- Author(s)
  Mutsumi Kimura, Tokiyoshi Matsuda, Mamoru Furuta, Takahiro Hiramatsu, Hiroshi Furuta, Chaoyang Li, Takashi Hirao, Yudai Kamada, and Shizuo Fujita
- Journal Title
  
  ECS Transaction
  
  Volume: 54 (1) Issue: 1 Pages: 121-126
- DOI
  10.1149/05401.0121ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560408
[Journal Article] Enhancing carrier mobility of IGZO TFT fabricated by non-vacuum mist CVD with O3 assistance2013
- Author(s)
  T. Kawaharamura, T. Uchida, M. Sanada, and M. Furuta
- Journal Title
  
  Physica status solidi (c)
  
  Volume: 10 Issue: 11 Pages: 1565-1568
- DOI
  10.1002/pssc.201300247
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560408
[Journal Article] Thermal Distribution in Amorphous InSnZnO Thin-Film Transistor2013
- Author(s)
  Satoshi Urakawa, Shigekazu Tomai, Yoshihiro Ueoka, Haruka Yamazaki, Masashi Kasami, Koki Yano, Dapeng Wang, Mamoru Furuta, Masahiro Horita, Yasuaki Ishikawa, and Yukiharu Uraoka
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 10 Issue: 11 Pages: 1561-1564
- DOI
  10.1002/pssc.201300253
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360137, KAKENHI-PROJECT-23560408
[Journal Article] Growth and electrical properties of AlOx grown by mist chemical vapor deposition2013
- Author(s)
  T. Kawaharamura, M. Furuta, 計4名(4番)
- Journal Title
  
  AIP Advances
  
  Volume: 3(3) Issue: 3
- DOI
  10.1063/1.4798303
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560408
[Journal Article] The deterioration phenomenon of amorphous InSnZnO transistors derivered from the process of annealing2013
- Author(s)
  S. Tomai, M. Furuta, 他計10名(10番)
- Journal Title
  
  Electrochemical and Solid-State Letters
  
  Volume: 2(12) Issue: 12 Pages: P107-P109
- DOI
  10.1149/2.003312ssl
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560408
[Journal Article] Stoichiometry Control of ZnO Thin Film by Adjusting Working Gas Ratio during Radio Frequency Magnetron Sputtering2013
- Author(s)
  C. Li, D. Wang, Z. Li, X. Li, T. Kawaharamura, and M. Furuta
- Journal Title
  
  Journal of Materials
  
  Volume: 2013 Pages: 1-6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560408
[Journal Article] A-InGaZnO Thin-Film Transistor with Non-Vacuum Processed InGaZnO/AlOx Gate Dielectric Stack2013
- Author(s)
  M. Furuta, T. Kawaharamura, T. Toda, and D. Wang
- Journal Title
  
  ECS Transaction
  
  Volume: 50 (8) Issue: 8 Pages: 95-100
- DOI
  10.1149/05008.0095ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560408
[Journal Article] ミストCVD法によるAlOx薄膜作製に対するO3支援の効果2013
- Author(s)
  内田貴之, 川原村敏幸, 古田守, 眞田克
- Journal Title
  
  日本材料学会誌
  
  Volume: 62 Pages: 663-667
- NAID
  130003384101
- Data Source
  KAKENHI-PROJECT-23560408
[Journal Article] (Invited) Negative-Bias with Illumination Stress Induced State Creation in Amorphous InGaZnO Thin-Film Transistor2013
- Author(s)
  M. Furuta, M. P. Hung, J. Jiang, D. Wang, S. Tomai, H. Hayasaka, amd K. Yano
- Journal Title
  
  ECS Transaction
  
  Volume: 54 (1) Issue: 1 Pages: 127-134
- DOI
  10.1149/05401.0127ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560408
[Journal Article] Photo Induced Negative Bias Instability of Zinc Oxide Thin-Film Transistors2012
- Author(s)
  S. Shimakawa, D. Wang, and M. Furuta
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51 Issue: 10R Pages: 108003-108003
- DOI
  10.1143/jjap.51.108003
- NAID
  210000073028
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560408
[Journal Article] Well-arrayed ZnO nanostructure formed by multi-annealing processes at low temperature2012
- Author(s)
  D. Wang, Z. Li, T. Kawaharamura, M. Furuta, T. Narusawa, and C. Li
- Journal Title
  
  physica status solidi (c)
  
  Volume: 9 Issue: 2 Pages: 194-197
- DOI
  10.1002/pssc.201100271
- NAID
  120005729026
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560408
[Journal Article] Crystallization Using Biomineralized Nickel Nanodots of Amorphous Silicon Thick Films Deposited by Chemical Vapor Deposition, Sputtering and Electron Beam Evaporation2012
- Author(s)
  Takashi Nishida
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51 Issue: 3S Pages: 03CA01-03CA01
- DOI
  10.1143/jjap.51.03ca01
- NAID
  210000140373
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360137, KAKENHI-PROJECT-23560408
[Journal Article] Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition2012
- Author(s)
  M. Furuta, T. Kawaharamura, D. Wang, T. Hirao, T. Toda, and G. T. Dang
- Journal Title
  
  IEEE Electron Devices Letters
  
  Volume: 33 Issue: 6 Pages: 851-853
- DOI
  10.1109/led.2012.2192902
- NAID
  120005254627
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560408
[Journal Article] A 128×96 Pixel, 50 mm Pixel Pitch Transparent Readout Circuit using InGaZnO4 Thin Film Transistor Array with Indium-Tin-Oxide Electrodes for Organic Image Sensor2012
- Author(s)
  T. Sakai, H. Seo, S. Aihara, M. Kubota, N. Egami, D. Wang, and M. Furuta
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51 Issue: 1R Pages: 010202-010202
- DOI
  10.1143/jjap.51.010202
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560408
[Journal Article] Photoleakage current of TFTs with ZnO channels formed at various oxygen partial pressure under visible light irradiation2012
- Author(s)
  S. Shimakawa, M. Furuta, 他計8名(8番)
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51 Issue: 3S Pages: 03CB04-03CB04
- DOI
  10.1143/jjap.51.03cb04
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560408
[Journal Article] Trap Densities in ZnO Thin-Film Transistors with SiOx Gate Insulators by Several Deposition Conditions2011
- Author(s)
  M. Kimura, M. Furuta, 他計9名
- Journal Title
  
  Electrochemical and Solid-State Letters
  
  Volume: 14 Issue: 9 Pages: H365-H365
- DOI
  10.1149/1.3601058
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560408
[Journal Article] Extraction of Trap Densities in ZnO Thin-film Transistors and Dependence on Oxygen Partial Pressures during Sputtering of ZnO Films2011
- Author(s)
  M. Kimura, M. Furuta,他計9名(2番)
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: 58 Issue: 9 Pages: 3018-3024
- DOI
  10.1109/ted.2011.2158546
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23560408
[Journal Article] Successful growth of conductive highly-crystalline Sn-dopedα-Ga2O3 thin films by fine channel mist chemical vapor deposition2011
- Author(s)
  T. Kawaharamura, Giang T. Dang, and M. Furuta
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: Vol.51 Issue: 4R Pages: 40207-40207
- DOI
  10.1143/jjap.51.040207
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22760232, KAKENHI-PROJECT-23560408
[Presentation] ヘテロ接合チャネルによるInGaZnO薄膜トランジスタの高移動度・高信頼性化2019
- Author(s)
  古田　守
- Organizer
  応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] 酸化物半導体InGaZnOx薄膜トランジスタの特性制御2018
- Author(s)
  古田　守
- Organizer
  シリコン材料・デバイス研究会（SDM）
- Invited
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] Mobility enhancement of InGaZnOx thin-film transistor by hetero-channel with a different composition2018
- Author(s)
  Mamoru Furuta
- Organizer
  International Conference on Solid State Devices and Materials (SSDM2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] Low-temperature activation of Ar+O2+H2 sputtered InGaZnOx film followed by thermal annealing2018
- Author(s)
  Mamoru Furuta
- Organizer
  4th E-MRS & MRS-J Bilateral Symposium 2018 (7th International Symposium on Transparent on Conductive Materials (TCM2018))
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] Ar+O2+H2スパッタによるInGaZnO薄膜トランジスタの低温形成2018
- Author(s)
  古田　守
- Organizer
  第79回応用物理学会秋季学術講演会シンポジウム
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] Low-temperature Processed InGaZnOx TFT with an Organic Gate Insulator2018
- Author(s)
  Mamoru Furuta
- Organizer
  5th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] Low-temperature activation method for InGaZnOx thin-film transistors2018
- Author(s)
  Mamoru Furuta
- Organizer
  ECS and SMEQ Joint International Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] ヘテロ接合チャネルIGZO TFTの特性・信頼性2018
- Author(s)
  古田　守
- Organizer
  第2回酸化物半導体討論会
- Invited
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] フレキシブルデバイスに向けた酸化物薄膜トランジスタの低温プロセス2018
- Author(s)
  古田　守
- Organizer
  第79回応用物理学会秋季学術講演会シンポジウム
- Invited
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] 酸化物薄膜トランジスタの光バイスストレス下における信頼性劣化メカニズム2017
- Author(s)
  古田　守
- Organizer
  日本学術振興会　半導体界面制御技術第154委員会　第104回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] Low-temperature Processed InGaZnO MES-FET for Flexible Device Applications2017
- Author(s)
  Mamoru Furuta, S. Hashimoto, K. Hamada, and Y. Magari
- Organizer
  International conference on ULSI and TFT
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] Effect of deposition temperature of InGaZnOx channel on electrical properties and reliability of thin-film transistors2017
- Author(s)
  Mamoru Furuta, H. Tanaka, and R. Higashi
- Organizer
  The 17th International Meeting on Information Displays (IMID2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] Enhancement of Reliability for In?Ga?Zn?O Thin-Film-Transistors by TEOS-based SiO2 Passivation2017
- Author(s)
  S G Mehadi Aman, 是友大地, 田中宏怜, 古田守
- Organizer
  The 17th International Meeting on Information Displays (IMID2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] Reliability and DC performance of InGaZnO Thin-Film Transistors with TEOS-based SiO2 Stack Passivation2017
- Author(s)
  S G Mehadi Aman, 是友大地, 田中宏怜, 古田守
- Organizer
  Eurodisplay2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] XPS Analysis of Carrier Generation Mechanism in He- and Ar-Plasma-Treated InGaZnO2017
- Author(s)
  曲勇作, 牧野久雄, 古田守
- Organizer
  29th International Conference on Defects in Semiconductor
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] InGaZnO/AgOx Metal-Semiconductor Field Effect Transistor for Flexible Device Applications2017
- Author(s)
  M. Furuta, S. Hashimoto, Y. Magari, K. Hamada, G. T. Dang, and M. W. Allen
- Organizer
  Eurodisplay2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] In-Ga-Zn-O成膜温度が薄膜トランジスタ特性および信頼性に及ぼす影響2017
- Author(s)
  田中宏怜, 東龍之介, 古田守
- Organizer
  第14回薄膜材料デバイス研究会
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] InGaZnOxヘテロチャネルによる薄膜トランジスタの高移動度・高信頼性化2017
- Author(s)
  東龍之介, 田中宏怜, 是友大地, 古田守, 髙橋誠一郎, 八島勇
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] 高移動度組成InGaZnO薄膜トランジスタの特性制御2017
- Author(s)
  東龍之介, 田中宏怜, 古田守, 髙橋誠一郎, 八島勇
- Organizer
  応用物理学会　中国四国支部　合同学術講演会
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] HeおよびArプラズマによるInGaZnOx導電層形成メカニズムと自己整合型トランジスタ応用2017
- Author(s)
  曲勇作, 牧野久雄, 古田守
- Organizer
  第14回薄膜材料デバイス研究会
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] AgOX/InGaZnOショットキー接合形成に向けた反応性スパッタ法によるAgOXの形成と物性評価2017
- Author(s)
  橋本慎輔, 曲勇作, 濵田賢一朗, 古田守
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] InWZnOチャネルによる薄膜トランジスタの高移動度化とその信頼性2017
- Author(s)
  是友大地, 橋本優太, 濱田秀平, 宮永美紀, 古田守
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] InGaZnO/AgOX酸化物ヘテロ界面によるショットキー特性評価2017
- Author(s)
  曲勇作, 橋本慎輔, 濵田賢一朗, 古田守
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] Low-temperature Processed and Self-aligned InGaZnOx TFT with an Organic Gate Insulator for Flexible Devices2016
- Author(s)
  M. Furuta, T. Toda, G. Tatsuoka, and Y. Magari
- Organizer
  Electrochemical Society(ECS PRiME2016)
- Place of Presentation
  Hawaii, USA
- Year and Date
  2016-10-04
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] High-mobility oxide thin-film transistors with an In-W-Zn-O channel2016
- Author(s)
  M. Furuta, D. Koretomo, Y. Hashimoto, K. Watatani, M. Miyanaga, and H. Awata
- Organizer
  International Meeting on Information Display (IMID2016)
- Place of Presentation
  Jeju, Korea
- Year and Date
  2016-08-24
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] Low-Temperature (150℃) Processed Self-Aligned InGaZnO/Organic Hybrid Thin-Film Transistor for Flexible Devices2016
- Author(s)
  G. Tatsuoka, T. Toda, Y. Magari, and M. Furuta
- Organizer
  International Meeting on Information Display (IMID2016)
- Place of Presentation
  Jeju, Korea
- Year and Date
  2016-08-25
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] デバイスシミュレーションによるIn-Ga-Zn-O薄膜トランジスタのキャリア輸送メカニズムの解析2016
- Author(s)
  是友大地、戸田達也、松田時宜、木村睦、古田守
- Organizer
  シリコンデバイス研究会
- Place of Presentation
  沖縄、日本
- Year and Date
  2016-04-08
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] Low-temperature (150℃) Processed Self-aligned InGaZnO Hybrid Thin-film Transistor with an Organic Gate Insulator2016
- Author(s)
  M. Furuta, Y. Krieg, G. Tatsuoka, S G Mehadi Aman, Y. Hirota, and N. Fruehauf
- Organizer
  International Display Workshops (IDW2016)
- Place of Presentation
  Fukuoka, Japan
- Year and Date
  2016-12-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] Low-Temperature Processed Metal-Semiconductor Field-Effect Transistor with In-Ga-Zn-O/AgOx Schottky Gate2016
- Author(s)
  Y. Magari, S. Hashimoto, K. Hamada, and M. Furuta
- Organizer
  Electrochemical Society(ECS PRiME2016)
- Place of Presentation
  Hawaii, USA
- Year and Date
  2016-10-05
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] Influence of Carrier Concentration at Front- and Back-channel on Transfer Characteristics of Bottom-Gate IGZO Thin-Film Transistors2016
- Author(s)
  D. Koretomo, T. Toda, T. Matsuda, M. Kimura, and M. Furuta
- Organizer
  Electrochemical Society(ECS PRiME2016)
- Place of Presentation
  Hawaii, USA
- Year and Date
  2016-10-05
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] 高移動度・高信頼性酸化物半導体In-W-Zn-Oの薄膜トランジスタ応用2016
- Author(s)
  橋本優太、是友大地、綿谷研一、宮永美紀、粟田　英章、古田守
- Organizer
  薄膜材料デバイス研究会
- Place of Presentation
  京都、日本
- Year and Date
  2016-10-21
- Data Source
  KAKENHI-PROJECT-16K06309
[Presentation] Developing a Novel Hybrid Method for Fabricating Well-aligned Zinc Oxide Nanorod2013
- Author(s)
  X. Li, E. Pradeep, T. Kawaharamura, D. Wang, A. Hatta, M. Furuta, and C. Li
- Organizer
  International Conference on Advanced Materials (IUMRS-ICAM2013)
- Place of Presentation
  Qingdao, China.
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Influence of Front- and Back-Channel Traps on Electrical Properties of Oxide TFTs with Various Channel Thicknesses2013
- Author(s)
  Jingxin Jiang, Dapeng Wang, Mamoru Furuta
- Organizer
  The 9th International Thin-Film Transistor Conference 2013 (ITC2013)
- Place of Presentation
  The University of Tokyo, Tokyo, Japan.
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] High-performance oxide thin-film transistors fabricated using atmospheric pressure deposition method2013
- Author(s)
  M. Furuta, T. Kawaharamura
- Organizer
  International Conference on Advanced Materials (IUMRS-ICAM2013)
- Place of Presentation
  Qingdao, China.
- Invited
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Influence of Charge Trapping on Hysteresis of InGaZnO Thin-Film Transistors under Negative Bias and Illumination Stress2013
- Author(s)
  M. P. Hung, D. Wang, J. Jiang, and M. Furuta
- Organizer
  The 20th International Display Workshops (IDW’13)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Reaction Mechanism for Fabrication of High Quality IGZO Thin Films Grown by Non-Vacuum Mist CVD with O3 Assistance2013
- Author(s)
  T. Kawaharamura, T. Kaida, and M. Furuta
- Organizer
  2013 MRS Fall Meeting & Exhibit
- Place of Presentation
  Boston, MA, USA
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Enhancing carrier mobility of IGZO TFT fabricated by Mist CVD with O3 assistance2013
- Author(s)
  T. Kawaharamura, T. Uchida, D. Wang, M. Sanada, and M. Furuta
- Organizer
  The 40th International Symposium on Compound Semiconductors (ISCS 2013)
- Place of Presentation
  Kobe, Japan
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Negative-Bias with Illumination Stress Induced State Creation in a-InGaZnO TFT2013
- Author(s)
  M. Furuta, M. P. Hung, J. Jiang, D. Wang, S. Tomai, H. Hayasaka, K. Yano
- Organizer
  4th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors
- Place of Presentation
  Villard-de-Lans (Grenoble area), France
- Invited
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Atmospheric Pressure Processed InGaZnO Thin-Film Transistors2013
- Author(s)
  M. Furuta, T. Kawaharamura
- Organizer
  International Meeting for Future of Electron Devices, Kansai (IMFEDK)
- Place of Presentation
  Osaka, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] High Mobility IGZO TFT fabricated by Solution-Based Non-Vacuum Mist Chemical Vapor Deposition2013
- Author(s)
  T. Kawaharamura and M. Furuta
- Organizer
  4th International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors
- Place of Presentation
  Villard-de-Lans (Grenoble area), France
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Negative bias with illumination stress induced state creation in a-InGaZnO TFT2013
- Author(s)
  M. Furuta, 計7名(1番)
- Organizer
  International Conference of Semiconductor Technology for ULSI and TFT
- Place of Presentation
  Grenoble, France
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] 酸化物薄膜トランジスタにおける発熱効果および劣化現象のサイズ依存性2013
- Author(s)
  浦川哲，笘井重和，笠見雅司，矢野公規，Wang Dapeng，古田守，堀田昌宏，石河泰明，浦岡行治
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学（京都）
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] High performance oxide Thin-Film Transistor fabricated using atmospheric pressure deposition method2013
- Author(s)
  M. Furuta, 計1名(1番)
- Organizer
  International Conference on Advanced Materials
- Place of Presentation
  Qingdao, China
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Trap States in Amorphous In-Sn-Zn-O Thin-Film Transistors Analyzed Using Dependence on Channel Thickness2013
- Author(s)
  T. Matsuda, M. Kimura, J. Jiang, D. Wang, M. Furuta, M. Kasami, S. Tomai, and K. Yano
- Organizer
  Society for Information Display (SID2013)
- Place of Presentation
  Vancouver, Canada
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] High performance a-InGaZnOx Thin-Film Transistors fabricated by Solution-Based Atmospheric Pressure Deposition Method2013
- Author(s)
  Mamoru Furuta, Toshiyuki Kawaharamura, T. Uchida, Dapeng Wang, M. Sanada
- Organizer
  The 9th International Thin-Film Transistor Conference 2013 (ITC2013)
- Place of Presentation
  The University of Tokyo, Tokyo, Japan.
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Degradation Phenomena in Amorphous Oxide Thin-Film Transistor by Self-Heating Effect2013
- Author(s)
  Satoshi Urakawa, Shigekazu Tomai, Yoshihiro Ueoka, Haruka Yamazaki, Masashi Kasami, Koki Yano, Dapeng Wang, Mamoru Furuta, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka
- Organizer
  The 9th International Thin-Film Transistor Conference 2013 (ITC2013)
- Place of Presentation
  The University of Tokyo, Tokyo, Japan.
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] バックチャネル欠陥準位がa-InGaZnO薄膜トランジスタ特性及び信頼性に与える影響2013
- Author(s)
  戸田達也，Dapeng Wang，Jingxin Jiang，Phi Hung Mai，古田守
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学（京都）
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] ZnSnO薄膜トランジスタにおけるMgOドーピング効果2013
- Author(s)
  竹之内良太, 王大鵬, 石井林太郎, 高橋広己, 久保田高史, 古田守
- Organizer
  第9回薄膜材料デバイス研究集会
- Place of Presentation
  龍谷大学アバンティ響都ホール(京都)
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] オゾン支援ミストCVD法による高移動度(>10cme/Vs)IGZO TFT～TFT特性のチャネル組成依存性～2013
- Author(s)
  介田忠宏, 川原村敏幸, 古田守
- Organizer
  第9回薄膜材料デバイス研究集会
- Place of Presentation
  龍谷大学アバンティ響都ホール(京都)
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Fabrication of High Conductive ITO Thin Film for Photovoltaic Applications2013
- Author(s)
  X. Li, C. Li, D. Wang, C. Pradeep, M. Furuta, and A. Hatta
- Organizer
  The Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD 13)
- Place of Presentation
  Kyoto, Japan.
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Thermal Distribution in Amorphous InSnZnO Thin-Film Transistor2013
- Author(s)
  S. Urakawa, S. Tomai, Y. Ueoka, H. Yamazaki, M. Kasami, K. Yano, D. Wang, M. Furuta, M. Horita, Y. Ishikawa, and Y. Uraoka
- Organizer
  The 40th International Symposium on Compound Semiconductors (ISCS 2013)
- Place of Presentation
  Kobe, Japan
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Investigation of Degradation Mechanism in Amorphous InGaZnO Thin-Film Transistors under Negative Bias and Illumination Stress by Simulation2013
- Author(s)
  D. Wang, J. Jiang, M. P. Hung, T. Toda, C. Li, and M. Furuta
- Organizer
  The 13th International Meeting on Information Display (IMID 2013)
- Place of Presentation
  Daegu, Republic of Korea
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Thermal Degradation and Theoretical Analysisof Amorphous Oxide Thin-Film Transistor2013
- Author(s)
  S. Urakawa, S. Tomai, M. Kasami, K. Yano, D. Wang, M. Furuta, M. Kimura, M. Horita, Y. Ishikawa, and Y. Uraoka
- Organizer
  The Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD 13)
- Place of Presentation
  Kyoto, Japan.
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Atmospheric pressure Processed InGaZnO Thin-film transistors2013
- Author(s)
  M. Furuta, 計2名(1番)
- Organizer
  IEEE International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Osaka, Japan
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] High Mobility Atmospheric-Pressure-Processed IGZO TFT with AlOx/IGZO Stack Fabricated by Mist Chemical Vapor Deposition2013
- Author(s)
  M. Furuta, T. Kawaharamura, T. Kaida, and D. Wang
- Organizer
  The 20th International Display Workshops (IDW’13)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Morphology Controlled Single-crystal ZnO Nanostructures Fabricated by a Novel Mist Chemical Vapor Deposition2013
- Author(s)
  C. Li, X. Li, D. Wang, T. Kawaharamura, N. Nitta, M. Furuta, and A. Hatta
- Organizer
  Society for Information Display (SID2013)
- Place of Presentation
  Vancouver, Canada
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Effect of Drain Bias on Negative Gate Bias and Illumination Stress Induced Degradation in Amorphous InGaZnO Thin-Film Transistors2013
- Author(s)
  D. Wang, M. P. Hung, J. Jiang, C. Li, and M. Furuta
- Organizer
  The Twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD 13)
- Place of Presentation
  Kyoto, Japan.
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Effect of Active Layer Thickness on Negative Bias and Illumination Stress Induced Degradation in Amorphous InGaZnO Thin-Film Transistors2013
- Author(s)
  D. Wang, J. Jiang, M. P. Hung, T. Toda, C. Li, and M. Furuta
- Organizer
  International Conference on Advanced Materials (IUMRS-ICAM2013)
- Place of Presentation
  Qingdao, China.
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Single Crystalline ZnO Nanorods Fabricated by Mist Chemical Vapor Deposition for Optical Applications2013
- Author(s)
  C. Li, X. Li, D. Wang, T. Kawaharamura, M. Furuta, and A. Hatta
- Organizer
  The 20th International Display Workshops (IDW’13)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Self-Organized Growth ZnO Based Nanorods for Photonic Device Application2012
- Author(s)
  Chaoyang Li, Dapeng Wang, Xin Li, Toshiyuki Kawaharamura, Mamoru Furuta, Akimitsu Hatta
- Organizer
  The 12th International Meeting on Information Display (IMID2012)
- Place of Presentation
  Daegu, Korea
- Invited
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Optical Properties of Nanostructured ZnO Films Influenced by Different Gas Ratio Deposition with Radio Frequency Magnetron Sputtering2012
- Author(s)
  Chaoyang Li, Xin Li, Dapeng Wang, Toshiyuki Kawaharamura, Mamoru Furuta, Akimitsu Hatta
- Organizer
  The 19th International Display Workshops in conjunction with Asia Display 2012 (IDW/AD’12)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Solution-Based Atmospheric Pressure Deposition Method for Oxide TFTs2012
- Author(s)
  Mamoru Furuta, Toshiyuki Kawaharamura, Dapeng Wang
- Organizer
  The 19th International Display Workshops in conjunction with Asia Display 2012 (IDW/AD’12)
- Place of Presentation
  Kyoto, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] a-IGZO TFT with Solution-Based Atmospheric Pressure Deposited IGZO/AlOx Gate Dielectric Stack2012
- Author(s)
  M. Furuta, S. Shimakawa, D. Wang,
- Organizer
  International Thin-Film Transistor Conference　(ITC2012)
- Place of Presentation
  Lisbon, Portugal
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Extraction of trap density on oxide thin-film transistors with various channel thickness2012
- Author(s)
  Jingxin Jiang, Dapeng Wang, Chaoyang Li, Mamoru Furuta
- Organizer
  20th Annual International Conference on Composites or Nano Engineering (ICCE-20)
- Place of Presentation
  Beijing, China
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Amorphous InGaZnO Thin-Film Transistor with solution-based atmospheric pressure deposited IGZO/AlOx Gate Dielectric Stack2012
- Author(s)
  Mamoru Furuta, Toshiyuki Kawaharamura, Dapeng Wang
- Organizer
  8th International Thin-Film Transistor Conference (ITC 2012)
- Place of Presentation
  Lisbon, Portugal
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Floating Body Effects in High-Mobility Oxide Thin-film Transistor2012
- Author(s)
  Mamoru Furuta, Dapeng Wang, Jingxin Jiang, Toshiyuki Kawaharamura, Chaoyang Li
- Organizer
  The 12th International Meeting on Information Display (IMID2012)
- Place of Presentation
  Daegu, Korea
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Structural and Electrical Properties of Al2O3 Film Grown by Mist Chemical Vapour Deposition2012
- Author(s)
  Toshiyuki Kawaharamura, Dapeng Wang, Tetsuya Toda, Chaoyang Li, Mamoru Furuta
- Organizer
  The Nineteenth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD 12)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] a-InGaZnO Thin-Film Transistor with Non-Vacuum Processed InGaZnO/AlOx Gate Dielectric Stack2012
- Author(s)
  Mamoru Furuta, Toshiyuki Kawaharamura, Tatsuya Toda, Dapeng Wang
- Organizer
  Pacific Rim Meeting on Electrochemical and Solid-state Science (PRiME2012)
- Place of Presentation
  Honolulu, Hawaii
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Solution-Based Atmospheric Pressure Deposition Method for Oxide TFTs2012
- Author(s)
  M. Furuta, 計3名(1番)
- Organizer
  The 19th International Display Workshops
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Influence of substrate on zinc oxide nanostructrues grown by thermal annealing2012
- Author(s)
  Xin Li, Chaoyang Li, Toshiyuki Kawaharamura, Dapeng Wang, Hiroshi Furuta, Mamoru Furuta, Akimitsu Hatta
- Organizer
  The 20th Annual International Conference on Composites or Nano Engineering (ICCE-20)
- Place of Presentation
  Beijing, China
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Electrical properties of oxide TFT with an IGZO/AlOx stack grown by solution-based non-vacuum mist chemical vapour deposition2012
- Author(s)
  Toshiyuki Kawaharamura, Dapeng Wang, Mamoru Furuta
- Organizer
  Information Display's Display Week 2012 (SID 2012)
- Place of Presentation
  Boston, USA
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Synthesis and photoluminescence properties of vertically well-aligned ZnO nanostructures2012
- Author(s)
  Chaoyang Li, Dapeng Wang, Toshiyuki Kawaharamura, Zeming Li, Noriko Nitta, Mamoru Furuta, Akimitsu Hatta
- Organizer
  Information Display's Display Week 2012 (SID 2012)
- Place of Presentation
  Boston, USA
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Influence of Active Layer Thickness on Performance and Reliability of InSnZnO Thin-Film Transistors2012
- Author(s)
  Dapeng Wang, Chaoyang Li, Mamoru Furuta, Shigekazu Tomai, Misa Sunagawa, Mami Nishimura, Emi Kawashima, Masashi Kasami, Koki Yano
- Organizer
  The Nineteenth International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD 12)
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Photo-Induced Bias Instability of Zinc Oxide Thin-Film Transistors2012
- Author(s)
  S. Shimakawa, D. Wang, and M. Furuta
- Organizer
  International Thin-Film Transistor Conference　(ITC2012)
- Place of Presentation
  Lisbon, Portugal
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Oxide Thin-Film Transistors for Flat Panel Displays and Transparent Electronics2012
- Author(s)
  M. Furuta, 計1名(1番)
- Organizer
  20th International Conference on Composites or Nano Engineering
- Place of Presentation
  Beijing, China
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Photo-induced Bias Instability of Zinc Oxide Thin-Film Transistors2012
- Author(s)
  Shin-ichi Shimakawa, Dapeng Wang, Mamoru Furuta
- Organizer
  8th International Thin-Film Transistor Conference (ITC 2012)
- Place of Presentation
  Lisbon, Portugal
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Oxide Thin-film Transistors for Flat Panel Display and Transparent Electronics Applications2012
- Author(s)
  Mamoru Furuta
- Organizer
  The 20th Annual International Conference on Composites or Nano Engineering (ICCE-20)
- Place of Presentation
  Beijing, China
- Invited
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] 酸化亜鉛薄膜トランジスタのサブギャップ準位と電気特性・信頼性への影響2011
- Author(s)
  古田　守、島川　伸一
- Organizer
  シリコン材料デバイス研究会(招待講演)
- Place of Presentation
  奈良
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Photo-Leakage Current and Hysteresis of the ZnO TFTs under Visible Light Irradiation2011
- Author(s)
  M. Furuta, Y. Kamada, T. Hiramatsu, T. Matsuda, S. Shimakawa, C. Li, S. Fujita, and T. Hirao
- Organizer
  International Workshop on Active-Matrix Flatpanel Display and Devices
- Place of Presentation
  京都
- Data Source
  KAKENHI-PROJECT-23560408
[Presentation] Color Image Sensor with Virtically-stacked Organic Photoconductive Films2011
- Author(s)
  M. Furuta, 計7名(6番)
- Organizer
  The 18th International Display Workshops (IDW'11)
- Place of Presentation
  Nagoya, Japan
- Data Source
  KAKENHI-PROJECT-23560408

1. URAOKA Yukiharu (20314536)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
2. KIMURA Mutsumi (60368032)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
3. KAWAHARAMURA Toshiyuki

# of Collaborated Projects: 0 results

# of Collaborated Products: 3 results
4. HORITA Masahiro

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
5. ISHIAKAWA Yasuaki

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
6. 西田貴司

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
7. 松田時宜

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results

Furuta Mamoru 古田 守

古田 守 フルタ マモル

FURUTA MAMORU 古田 守

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低温固相結晶化による疑似単結晶酸化インジウムトランジスタの創成Principal Investigator

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水素による透明金属酸化インジウムの半導体転移と固相結晶化フレキシブルトランジスタPrincipal Investigator

Principal Investigator

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Flexible and transparent circuits for stacked image sensor applicationPrincipal Investigator

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Zinc oxide transparent transistor and its application to stacked image sensorPrincipal Investigator

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[Book] 応用物理, "ミスト化学気相成長法を用いた大気圧薄膜形成と酸化物機能デバイスのグリーンプロセス化"2014

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[Book] 月刊ディスプレイ(2013年10月号), "溶液プロセスによる酸化物半導体TFTの大気圧形成技術"2013

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[Book] 月刊ディスプレイ 2013年10月号2013

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[Journal Article] Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors2019

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[Journal Article] Collaborative optimization of thermal budget annealing and active layer defect content enhancing electrical characteristics and bias stress stability in InGaZnO thin-film transistors2019

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[Journal Article] Heterojunction channel engineering to enhance performance and reliability of amorphous In?Ga?Zn?O thin-film transistors2019

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NAID

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[Journal Article] Memristive characteristic of an amorphous Ga-Sn-O thin-film device2019

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[Journal Article] High mobility sputtered InSb film by blue laser diode annealing2019

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[Journal Article] Improvement in bias-stress and long-term stabilities for in-Ga-Zn-O thin-film transistors using solution-process-compatible polymeric gate insulator2019

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[Journal Article] Influence of a SiO2 passivation on electrical properties and reliability of In-W-Zn-O thin-film transistor2018

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Furuta Mamoru 古田守

古田守フルタマモル

FURUTA MAMORU 古田守

[Book] 月刊ディスプレイ　2013年10月号2013