Watanabe Issei 渡邊一世

… Alternative Names

渡邊一世ワタナベイッセイ

Less

Researcher Number	20450687
Other IDs
Affiliation (Current)	2025: 国立研究開発法人情報通信研究機構, 未来ICT研究所小金井フロンティア研究センター, 室長
Affiliation (based on the past Project Information) *help	2021 – 2023: 国立研究開発法人情報通信研究機構, 未来ICT研究所小金井フロンティア研究センター, 室長 2020: 国立研究開発法人情報通信研究機構, 未来ICT研究所フロンティア創造総合研究室, 主任研究員
Review Section/Research Field	Except Principal Investigator Basic Section 21060:Electron device and electronic equipment-related
Keywords	Except Principal Investigator InGaSb / ナローギャップ半導体 / 遅延時間解析 / fmax / fT / 歪みバンドエンジニアリング / HEMT / GaInSb / 極限性能トランジスタ / テラヘルツ領域

Development of Ultra-high Performance InGaSb Channel THz Transistors
- Principal Investigator
  
  Fujishiro Hiroki
- Project Period (FY)
  2020 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Tokyo University of Science

All 2024 2023 2022 2021 2020

All Journal Article Presentation

[Journal Article] AlSb/GaSb バッファ層を用いたGaInSb HEMT 構造の低転位化2024
- Author(s)
  河野亮介，海老原怜央，吉田陸人，神内智揮，町田龍人，渡邊一世，山下良美，原紳介，笠松章史，遠藤聡，藤代博記
- Journal Title
  
  国立研究開発法人情報通信研究機構2023年度先端ICTデバイスラボ成果報告書
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] 300 GHz 超fT, fmax ダブルドープ構造GaInSb HEMT2024
- Author(s)
  吉田陸人, 河野亮介, 海老原怜央, 神内智揮, 渡邊一世, 山下良美, 町田龍人, 原紳介, 笠松章史, 遠藤聡, 藤代博記
- Journal Title
  
  第71回応用物理学会春季学術講演会講演予稿集
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] InSb/Ga0.22In0.78Sb複合チャネルHEMT構造の高電子移動度化2024
- Author(s)
  神内智揮，海老原怜央，吉田陸人，河野亮介，町田龍人，渡邊一世，山下良美，原紳介，笠松章史，遠藤聡，藤代博記
- Journal Title
  
  国立研究開発法人情報通信研究機構2023年度先端ICTデバイスラボ成果報告書
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] GaInSb HEMT のバリア層薄膜化による真性遅延時間低減2024
- Author(s)
  吉田陸人, 河野亮介, 海老原怜央, 神内智揮, 渡邊一世, 山下良美, 町田龍人, 原紳介, 笠松章史, 遠藤聡, 藤代博記
- Journal Title
  
  第71回応用物理学会春季学術講演会講演予稿集
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] GaInSb n-チャネル HEMT 構造におけるチャネル歪みの電子輸送特性への影響2023
- Author(s)
  藤代博記，遠藤聡，羽鳥小春，吉武優輔，吉田陸人，海老原怜央，町田龍人，渡邊一世，山下良美，原紳介，笠松章史
- Journal Title
  
  国立研究開発法人情報通信研究機構2022年度先端ICTデバイスラボ成果報告書
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] Reduction of Defects in GaInSb HEMT Structure by Using AlSb/GaSb Buffer2023
- Author(s)
  R. Ebihara, G. Ogane, M. Hiraoka, T. Hayashi, M. Kunisawa, R. Machida, I. Watanabe, Y. Yamashita, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Journal Title
  
  Proc. Compound Semiconductor Week 2023 (CSW2023)
  
  Volume: -
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] Effect of Strain in Channel on Electron Transport Properties of Ga1－xInxSb High Electron Mobility Transistor Structures with Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer2023
- Author(s)
  Akira Endoh, Koharu Hatori, Naoyuki Kishimoto, Mizuho Hiraoka, Yuta Kemmochi, Yuki Endoh, Koki Osawa, Takuya Hayashi, Ryuto Machida, Issei Watanabe, Yoshimi Yamashita, Shinsuke Har
- Journal Title
  
  PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
  
  Volume: 220 Issue: 8 Pages: 2200529-2200529
- DOI
  10.1002/pssa.202200529
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] Performance Comparison of Al0.40In0.60Sb/Ga0.22In0.78Sb HEMT with Undoped- and Doped-cap Layers to Improve RF Characteristics2023
- Author(s)
  R. Machida, N. Kishimoto, Y. Isomae, T. Hayashi, M. Kunisawa, A. Endoh, H. I. Fujishiro, Y. Yamashita, S. Hara, A. Kasamatsu, I. Watanabe
- Journal Title
  
  Proc. Compound Semiconductor Week 2023 (CSW2023)
  
  Volume: -
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] アンドープキャップAl0.40In0.60Sb/Ga0.22In0.78Sb HEMTの特性2023
- Author(s)
  町田龍人、岸本尚之、礒前雄人、林拓也、國澤宗真、遠藤聡、藤代博記、山下良美、原紳介、笠松章史、渡邊一世
- Journal Title
  
  第84回応用物理学会秋季学術講演会講演予稿集
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] Effect of Strain in Channel on Electron Transport Properties of Ga1-xInxSb HEMT Structures with Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer2022
- Author(s)
  K. Hatori, N. Kishimoto, M. Hiraoka, Y. Endoh, K. Osawa, T. Hayashi, Y. Kemmochi, R. Machida, I. Watanabe, Y. Yamashita, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Journal Title
  
  Proc. Compound Semiconductor Week 2022 (CSW2022)
  
  Volume: - Pages: 67-67
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] エピタキシャル構造に対してスケーリングを施したGaInSbチャネルHEMT2022
- Author(s)
  藤代博記、遠藤　聡、礒前雄人、吉武優輔、國澤宗真、羽鳥小春、渡邊一世、山下良美、町田龍人、原　紳介、笠松章史
- Journal Title
  
  国立研究開発法人情報通信研究機構2021年度先端ICTデバイスラボ成果報告書
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] Development of GaInSb n-Channel HEMTs Using Experiments and Simulations2022
- Author(s)
  A. Endoh, N. Kishimoto, Y. Isomae, T. Hayashi, M. Kunisawa, K. Sawamura, T. Kawasaki, Y. Satou, I. Watanabe, Y. Yamashita, R. Machida, S. Hara, A. Kasamatsu and H. I. Fujishiro
- Journal Title
  
  Abstracts of 14th Topical Workshop on Heterostructure Microelectronics (TWHM2022)
  
  Volume: - Pages: 12-3
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] Device Performances and Delay Time Analysis of GaInSb-Channel HEMTs Scaled to Epitaxial Structures2021
- Author(s)
  Y. Isomae, N. Kishimoto, T. Hayashi, M. Kunisawa, I. Watanabe, Y. Yamashita, R. Machida, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Journal Title
  
  Proc. Compound Semiconductor Week 2021 (CSW2021)
  
  Volume: -
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] エピスケーリングを施したGaInSb-HEMTの特性評価と遅延時間解析2021
- Author(s)
  礒前雄人、岸本尚之、林　拓也、國澤宗真、渡邊一世、山下良美、町田龍人、原　紳介、笠松章史、遠藤　聡、藤代博記
- Journal Title
  
  信学技報
  
  Volume: 121 Pages: 44-47
- Data Source
  KAKENHI-PROJECT-20H02211
[Journal Article] AlSb/GaSbバッファがGaInSb HEMTの電気的特性に与える影響2021
- Author(s)
  藤代博記、遠藤　聡、林　拓也、岸本尚之、國澤宗真、礒前雄人、渡邊一世、山下良美、町田龍人、原　紳介、笠松章史
- Journal Title
  
  国立研究開発法人情報通信研究機構2020年度先端ICTデバイスラボ成果報告書
  
  Volume: -
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] Enhanced electron mobility in InSb/Ga0.22In0.78Sb composite channel HEMT structure2024
- Author(s)
  T. Jinnai, T. Oba, W. Nakajima, R. Ebihara, R. Machida, I. Watanabe, Y. Yamashita, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2024 (CSW2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] High fT and fmax of double δ-doped GaInSb channel HEMTs2024
- Author(s)
  R. Kouno, R. Yoshida, R. Ebihara, T. Jinnai, R. Machida, I. Watanabe, Y. Yamashita, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2024 (CSW2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] GaInSb HEMT のバリア層薄膜化による真性遅延時間低減2024
- Author(s)
  吉田陸人, 河野亮介, 海老原怜央, 神内智揮, 渡邊一世, 山下良美, 町田龍人, 原紳介, 笠松章史, 遠藤聡, 藤代博記
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] 300 GHz 超fT, fmax ダブルドープ構造GaInSb HEMT2024
- Author(s)
  吉田陸人, 河野亮介, 海老原怜央, 神内智揮, 渡邊一世, 山下良美, 町田龍人, 原紳介, 笠松章史, 遠藤聡, 藤代博記
- Organizer
  第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] Reduction of Defects in GaInSb HEMT Structure by Using AlSb/GaSb Buffer2023
- Author(s)
  R. Ebihara, G. Ogane, M. Hiraoka, T. Hayashi, M. Kunisawa, R. Machida, I. Watanabe, Y. Yamashita, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2023 (CSW2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] アンドープキャップAl0.40In0.60Sb/Ga0.22In0.78Sb HEMTの特性2023
- Author(s)
  町田龍人、岸本尚之、礒前雄人、林拓也、國澤宗真、遠藤聡、藤代博記、山下良美、原紳介、笠松章史、渡邊一世
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] Performance Comparison of Al0.40In0.60Sb/Ga0.22In0.78Sb HEMT with Undoped- and Doped-cap Layers to Improve RF Characteristics2023
- Author(s)
  R. Machida, N. Kishimoto, Y. Isomae, T. Hayashi, M. Kunisawa, A. Endoh, H. I. Fujishiro, Y. Yamashita, S. Hara, A. Kasamatsu, I. Watanabe
- Organizer
  Compound Semiconductor Week 2023 (CSW2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] Effect of Strain in Channel on Electron Transport Properties of Ga1-xInxSb HEMT Structures with Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer2022
- Author(s)
  K. Hatori, N. Kishimoto, M. Hiraoka, Y. Endoh, K. Osawa, T. Hayashi, Y. Kemmochi, R. Machida, I. Watanabe, Y. Yamashita, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2021 (CSW2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] Effect of Strain in Channel on Electron Transport Properties of Ga1-xInxSb HEMT Structures with Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer2022
- Author(s)
  K. Hatori, N. Kishimoto, M. Hiraoka, Y. Endoh, K. Osawa, T. Hayashi, Y. Kemmochi, R. Machida, I. Watanabe, Y. Yamashita, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2022 (CSW2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] Ｘ線回折極点図測定を用いたGaInSb HEMT構造中の双晶評価2022
- Author(s)
  海老原怜央、國澤宗真、羽鳥小春、吉田陸人、渡邊一世、町田龍人、山下良美、原　紳介、笠松章史、遠藤　聡、藤代博記
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] Development of GaInSb n-Channel HEMTs Using Experiments and Simulations2022
- Author(s)
  A. Endoh, N. Kishimoto, Y. Isomae, T. Hayashi, M. Kunisawa, K. Sawamura, T. Kawasaki, Y. Satou, I. Watanabe, Y. Yamashita, R. Machida, S. Hara, A. Kasamatsu and H. I. Fujishiro
- Organizer
  14th Topical Workshop on Heterostructure Microelectronics (TWHM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] GaInSb HEMT構造の電気的特性への熱処理の影響2022
- Author(s)
  吉田陸人、國澤宗真、羽鳥小春、海老原怜央、渡邊一世、町田龍人、山下良美、原　紳介、笠松章史、遠藤　聡、藤代博記
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] 歪超格子バッファを用いたGaInSb HEMTの電気的特性と膜厚の評価2021
- Author(s)
  國澤宗真、林　拓也、平岡瑞穂、大金剛毅、渡邊一世、山下良美、原　紳介、町田龍人、笠松章史、遠藤　聡、藤代博記
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] Device Performances and Delay Time Analysis of GaInSb-Channel HEMTs Scaled to Epitaxial Structures2021
- Author(s)
  Y. Isomae, N. Kishimoto, T. Hayashi, M. Kunisawa, I. Watanabe, Y. Yamashita, R. Machida, S. Hara, A. Kasamatsu, A. Endoh and H. I. Fujishiro
- Organizer
  Compound Semiconductor Week 2021 (CSW2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] エピスケーリングを施したGaInSb-HEMTの特性評価と遅延時間解析2021
- Author(s)
  礒前雄人、岸本尚之、林　拓也、國澤宗真、渡邊一世、山下良美、町田龍人、原　紳介、笠松章史、遠藤　聡、藤代博記
- Organizer
  電子情報通信学会電子デバイス研究会「ミリ波・テラヘルツ波デバイス・システム」
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] エピスケーリングを施したGaInSb-HEMTの特性評価と遅延時間解析2021
- Author(s)
  岸本尚之、礒前雄人、林　拓也、國澤宗真、渡邊一世、山下良美、町田龍人、原　紳介、笠松章史、遠藤　聡、藤代博記
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02211
[Presentation] AlSb/GaSbバッファがGaInSb HEMTの電気的特性に与える影響2020
- Author(s)
  林　拓也、平岡瑞穂、大金剛毅、國澤宗真、岸本尚之、渡邊一世、山下良美、原　紳介、町田龍人、笠松章史、遠藤　聡、藤代博記
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02211

1. Fujishiro Hiroki (60339132)

# of Collaborated Projects: 1 results

# of Collaborated Products: 31 results
2. 遠藤聡 (60417110)

# of Collaborated Projects: 1 results

# of Collaborated Products: 32 results
3. 町田龍人 (50806560)

# of Collaborated Projects: 1 results

# of Collaborated Products: 32 results

Watanabe Issei 渡邊 一世

渡邊 一世 ワタナベ イッセイ

Research Projects

Research Products

Co-Researchers

Development of Ultra-high Performance InGaSb Channel THz Transistors

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] AlSb/GaSb バッファ層を用いたGaInSb HEMT 構造の低転位化2024

Author(s)

Journal Title

Data Source

[Journal Article] 300 GHz 超fT, fmax ダブルドープ構造GaInSb HEMT2024

Author(s)

Journal Title

Data Source

[Journal Article] InSb/Ga0.22In0.78Sb複合チャネルHEMT構造の高電子移動度化2024

Author(s)

Journal Title

Data Source

[Journal Article] GaInSb HEMT のバリア層薄膜化による真性遅延時間低減2024

Author(s)

Journal Title

Data Source

[Journal Article] GaInSb n-チャネル HEMT 構造におけるチャネル歪みの電子輸送特性への影響2023

Author(s)

Journal Title

Data Source

[Journal Article] Reduction of Defects in GaInSb HEMT Structure by Using AlSb/GaSb Buffer2023

Author(s)

Journal Title

Data Source

[Journal Article] Effect of Strain in Channel on Electron Transport Properties of Ga1－xInxSb High Electron Mobility Transistor Structures with Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Performance Comparison of Al0.40In0.60Sb/Ga0.22In0.78Sb HEMT with Undoped- and Doped-cap Layers to Improve RF Characteristics2023

Author(s)

Journal Title

Data Source

[Journal Article] アンドープキャップAl0.40In0.60Sb/Ga0.22In0.78Sb HEMTの特性2023

Author(s)

Journal Title

Data Source

[Journal Article] Effect of Strain in Channel on Electron Transport Properties of Ga1-xInxSb HEMT Structures with Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer2022

Author(s)

Journal Title

Data Source

[Journal Article] エピタキシャル構造に対してスケーリングを施したGaInSbチャネルHEMT2022

Author(s)

Journal Title

Data Source

[Journal Article] Development of GaInSb n-Channel HEMTs Using Experiments and Simulations2022

Author(s)

Journal Title

Data Source

[Journal Article] Device Performances and Delay Time Analysis of GaInSb-Channel HEMTs Scaled to Epitaxial Structures2021

Author(s)

Journal Title

Data Source

[Journal Article] エピスケーリングを施したGaInSb-HEMTの特性評価と遅延時間解析2021

Author(s)

Journal Title

Data Source

[Journal Article] AlSb/GaSbバッファがGaInSb HEMTの電気的特性に与える影響2021

Author(s)

Journal Title

Data Source

[Presentation] Enhanced electron mobility in InSb/Ga0.22In0.78Sb composite channel HEMT structure2024

Author(s)

Organizer

Data Source

[Presentation] High fT and fmax of double δ-doped GaInSb channel HEMTs2024

Author(s)

Organizer

Data Source

Watanabe Issei 渡邊一世

渡邊一世ワタナベイッセイ