Hoshii Takuya 星井拓也

Researcher Number	20611049
Other IDs
Affiliation (Current)	2022: 東京工業大学, 工学院, 助教
Affiliation (based on the past Project Information) *help	2016 – 2022: 東京工業大学, 工学院, 助教 2015: 東京工業大学, 総合理工学研究科(研究院), 助教
Review Section/Research Field	Principal Investigator Crystal engineering / Electron device/Electronic equipment / Basic Section 21060:Electron device and electronic equipment-related Except Principal Investigator Electronic materials/Electric materials / Basic Section 21060:Electron device and electronic equipment-related
Keywords	Principal Investigator MBE / III-V族化合物半導体 / 半導体界面評価 / 電子デバイス / 半導体 / パワーデバイス Except Principal Investigator 選択成長 / 立体チャネル / FinFET / GaN … More / パワーデバイス / 窒化ガリウムGaN / トランジスタ / GaNデバイス / 電子デバイス / 電気・電子材料 / 結晶成長 / 窒化ガリウム Less

高移動度二次元正孔ガスpチャネルGaNトランジスタの開発Principal Investigator
- Principal Investigator
  
  星井拓也
- Project Period (FY)
  2021 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Tokyo Institute of Technology
GaN transited having 3-dimensional channels with various operation modes using selectively grown Fin structures
- Principal Investigator
  
  筒井一生
- Project Period (FY)
  2019 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Tokyo Institute of Technology
Development of low-loss buffer layer for fabrication and realization of high-performance optical devices on Si substratesPrincipal Investigator
- Principal Investigator
  
  Hoshii Takuya
- Project Period (FY)
  2015 – 2018
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Crystal engineering
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology
GaN Transistors with Three-dimensional Channel Fabricated by Using Selective Area Growth
- Principal Investigator
  
  Tsutsui Kazuo
- Project Period (FY)
  2015 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology

All 2021 2020 2019 2018 2017 2016 2015

All Journal Article Presentation Patent

[Journal Article] Photoassisted impedance spectroscopy for quantum dot solar cells2016
- Author(s)
  Takuya Hoshii,Shunya Naitoh, and Yoshitaka Okada
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 Issue: 4S Pages: 04ES11-04ES11
- DOI
  10.7567/jjap.55.04es11
- NAID
  210000146445
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K20960
[Patent] ｐチャネルＧａＮＭＯＳデバイス及びその製造方法2021
- Inventor(s)
  星井拓也、筒井一生
- Industrial Property Rights Holder
  星井拓也、筒井一生
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2021-137005
- Filing Date
  2021
- Data Source
  KAKENHI-PROJECT-21K04172
[Presentation] 窒素プラズマ ALE による P チャネル GaN HFET の特性向上2021
- Author(s)
  木村匠之介、三浦克之、星井拓也、角嶋邦之、若林整、筒井一生
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04172
[Presentation] 横型GaN系FinFETにおける異なるチャネル伝導形態の比較検討2021
- Author(s)
  久恒悠介、星井拓也、角嶋邦之、若林整、筒井一生
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] 選択成長法を用いたGaN FinFETの作製：成長窓形成プロセスの検討2021
- Author(s)
  太田貴士、佐々木満考、高山研、濱田拓也、高橋言緒、井出利英、清水三聡、星井拓也、角嶋邦之、若林整、筒井一生
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] 選択成長法を用いたGaN 系FinFET2021
- Author(s)
  筒井一生,濱田拓也,高山研,金相佑,星井拓也,角嶋邦之,若林整,高橋言緒,井手利英,清水三聡
- Organizer
  電気学会電子デバイス研究会
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] GaN FinFETの低オン抵抗・高耐圧化に向けたドリフト領域拡幅の検討2021
- Author(s)
  久恒悠介、星井拓也、角嶋邦之、若林整、筒井一生
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] 分極接合基板のC-V特性において二段階変化が起こる要因の解明2021
- Author(s)
  鬼村和志、星井拓也、松橋泰平、沖田寛昌、角嶋邦之、若林整、筒井一生、中島昭
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04172
[Presentation] 横型GaN FinFETの構造最適化についての検討2020
- Author(s)
  久恒悠介、金相佑、星井拓也、角嶋邦之、若林整、筒井一生
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] 選択成長法を用いたGaN FinFETの作製:リーク電流抑制の改良2020
- Author(s)
  高山研、太田貴士、佐々木満孝、向井勇人、濱田拓也、高橋言雄、井出利英、清水三聡、星井拓也、角嶋邦之、若林整、筒井一生
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] Evaluation of Interfacial Charges at GaN/AlGaN Interfaces Grown by MOVPE using Triethylgallium2019
- Author(s)
  Takuya Hoshii, Hiromasa Okita, Taihei Matsuhashi, Indraneel Sanyal, Yu-Chih Chen, Ying-Hao Ju, Akira Nakajima, Kuniyuki Kakushima, Hitoshi Wakabayashi, Jen-Inn Chyi, and Kazuo Tsutsui
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] GaN Fin構造選択成長における低抵抗領域の発生原因の検討2019
- Author(s)
  高山研、向井勇人、濱田拓也、高橋言緒、井手利英、清水三総、星井拓也、角嶋邦之、若林整、岩井洋、筒井一生
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] FinFET応用に向けた選択成長GaNチャネルの電気特性2019
- Author(s)
  濱田拓也、向井勇人、高橋言緒、井手利英、清水三聡、星井拓也、角嶋邦之、若林整、岩井洋、筒井一生
- Organizer
  第66回応用物理学会春期学術講演会
- Data Source
  KAKENHI-PROJECT-15H03972
[Presentation] 選択成長法を用いたGaN FinFETの作製2019
- Author(s)
  向井勇人、髙山研、濱田拓也、高橋言緒、井手利英、清水三聡、星井拓也、角嶋邦之、若林整、岩井洋、筒井一生
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] Quantitative evaluation of interfacial charges at GaN/AlGaN interfaces2019
- Author(s)
  Takuya Hoshii, Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, and Kazuo Tsutsui
- Organizer
  13tu Int. Conf. on Nitride Semiconductor (ICNS)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02192
[Presentation] 立体チャネルトランジスタ応用に向けた選択成長GaNの貫通転位の低減2018
- Author(s)
  濱田拓也、黒岩宏紀、高橋言緒、井手利英、清水三聡、星井拓也、角嶋邦之、若林整、岩井洋、筒井一生
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03972
[Presentation] 立体チャネルトランジスタ応用に向けた選択成長GaNの異方性エッチング2018
- Author(s)
  向井勇人、濱田拓也、高橋言緒、井出利英、清水三聡、星井拓也、角嶋邦之、若林整、岩井洋、筒井一生
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03972
[Presentation] FinFET応用に向けた選択成長GaNチャネルの電気特性2018
- Author(s)
  濱田拓也, 向井勇人, 高橋言緒, 井手利英, 清水三聡, 星井拓也, 角嶋邦之, 若林整, 岩井洋, 筒井一生
- Organizer
  第82回半導体・集積回路シンポジウム
- Data Source
  KAKENHI-PROJECT-15H03972
[Presentation] Electrical properties of selectively grown GaN channel for FinFETs2018
- Author(s)
  Takuya Hamada, Hayato Mukai, Tokio Takahashi, Toshihide Ide, Mitsuaki Shimizu, Hiroki Kuroiwa, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai, and Kazuo Tsutsui
- Organizer
  Int. Workshop on Nitride Semiconductors (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03972
[Presentation] III-V Crystal Growth on Si for Power Generation and Saving Devices2017
- Author(s)
  Takuya Hoshii, Hiroki Kuroiwa, Takuya Hamada, Tokio Takahashi, Toshihide Ide, Mitsuaki Shimizu, and Kazuo Tsutsui
- Organizer
  International Conference on Advanced in Materials Science and Technology
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K20960
[Presentation] 立体チャネルトランジスタ応用に向けた選択成長GaNの形状制御2017
- Author(s)
  黒岩宏紀、濱田拓也、高橋言緒、井出利英、清水三聡、星井拓也、角嶋邦之、若林整、岩井洋、筒井一生
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15H03972
[Presentation] Admittance spectroscopy analysis on the interfacial defect levels in the surface-activated bonding of GaAs2016
- Author(s)
  Daiji Yamashita, Kentaroh Watanabe, Masahisa Fujino, Takuya Hoshii, Yoshitaka Okada, Yoshiaki Nakano, Tadatomo Suga, and Masakazu Sugiyama
- Organizer
  43th Photovoltaic Specialists Conference
- Place of Presentation
  Portland, OR (USA)
- Year and Date
  2016-06-05
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K20960
[Presentation] 超高効率多接合太陽電池作製に向けた表面活性化接合界面の評価2016
- Author(s)
  山下大之、渡辺健太郎、藤野真久、星井拓也、杉山正和、岡田至崇、須賀唯知、中野義昭
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15K20960
[Presentation] Electrical Evaluation of Energy Distribution of State Density in Embedded Nanostructure2016
- Author(s)
  Takuya Hoshii
- Organizer
  International conference on Materials Processing and Applications 2016
- Place of Presentation
  Vellore Institute of Technology (India)
- Year and Date
  2016-12-14
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K20960
[Presentation] Characteristics of Fe/pGaN Contact upon Annealing Process2016
- Author(s)
  Y. Ikeuchi, Takuya Hoshii, Hithoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima, and S. Ishikawa
- Organizer
  47th IEEE Semiconductor Interface Specialists Conference
- Place of Presentation
  Catamaran Hotel (CA, USA)
- Year and Date
  2016-12-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K20960
[Presentation] Si ドープした InAs 量子ドットへの赤外光集光効果2015
- Author(s)
  内藤駿弥、宮下直也、星井拓也、岡田至崇
- Organizer
  第34回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖
- Year and Date
  2015-07-15
- Data Source
  KAKENHI-PROJECT-15K20960
[Presentation] 光刺激インピーダンス分光法による量子ドット太陽電池の評価2015
- Author(s)
  星井拓也、内藤駿弥、岡田至崇
- Organizer
  第34回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖
- Year and Date
  2015-07-15
- Data Source
  KAKENHI-PROJECT-15K20960
[Presentation] Photo-Assisted Impedance Spectroscopy for Quantum Dot Solar Cell2015
- Author(s)
  Takuya Hoshii,Shunya Naitoh, and Yoshitaka Okada
- Organizer
  2015 International Conference on Solid State Devices and Materials
- Place of Presentation
  Sapporo Convention Center
- Year and Date
  2015-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K20960

1. Tsutsui Kazuo (60188589)

# of Collaborated Projects: 3 results

# of Collaborated Products: 18 results
2. 清水三聡 (10357212)

# of Collaborated Projects: 2 results

# of Collaborated Products: 11 results
3. 角嶋邦之 (50401568)

# of Collaborated Projects: 2 results

# of Collaborated Products: 16 results
4. 中島昭 (60450657)

# of Collaborated Projects: 2 results

# of Collaborated Products: 1 results
5. 山田永 (60644432)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Hoshii Takuya 星井 拓也

Research Projects

Research Products

Co-Researchers

高移動度二次元正孔ガスpチャネルGaNトランジスタの開発Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

GaN transited having 3-dimensional channels with various operation modes using selectively grown Fin structures

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of low-loss buffer layer for fabrication and realization of high-performance optical devices on Si substratesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

GaN Transistors with Three-dimensional Channel Fabricated by Using Selective Area Growth

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Photoassisted impedance spectroscopy for quantum dot solar cells2016

Author(s)

Journal Title

DOI

NAID

ISSN

Data Source

[Patent] ｐチャネルＧａＮＭＯＳデバイス及びその製造方法2021

Inventor(s)

Industrial Property Rights Holder

Industrial Property Rights Type

Industrial Property Number

Filing Date

Data Source

[Presentation] 窒素プラズマ ALE による P チャネル GaN HFET の特性向上2021

Author(s)

Organizer

Data Source

[Presentation] 横型GaN系FinFETにおける異なるチャネル伝導形態の比較検討2021

Author(s)

Organizer

Data Source

[Presentation] 選択成長法を用いたGaN FinFETの作製：成長窓形成プロセスの検討2021

Author(s)

Organizer

Data Source

[Presentation] 選択成長法を用いたGaN 系FinFET2021

Author(s)

Organizer

Data Source

[Presentation] GaN FinFETの低オン抵抗・高耐圧化に向けたドリフト領域拡幅の検討2021

Author(s)

Organizer

Data Source

[Presentation] 分極接合基板のC-V特性において二段階変化が起こる要因の解明2021

Author(s)

Organizer

Data Source

[Presentation] 横型GaN FinFETの構造最適化についての検討2020

Author(s)

Organizer

Data Source

[Presentation] 選択成長法を用いたGaN FinFETの作製:リーク電流抑制の改良2020

Author(s)

Organizer

Data Source

[Presentation] Evaluation of Interfacial Charges at GaN/AlGaN Interfaces Grown by MOVPE using Triethylgallium2019

Author(s)

Organizer

Data Source

[Presentation] GaN Fin構造選択成長における低抵抗領域の発生原因の検討2019

Author(s)

Hoshii Takuya 星井拓也