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Yamamoto Keisuke  山本 圭介

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YAMAMOTO Keisuke  山本 圭介

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Researcher Number 20706387
Other IDs
Affiliation (Current) 2025: 熊本大学, 半導体・デジタル研究教育機構, 教授
Affiliation (based on the past Project Information) *help 2022 – 2024: 九州大学, 総合理工学研究院, 准教授
2018 – 2021: 九州大学, 総合理工学研究院, 助教
2016: 九州大学, 総合理工学研究科, 助教
2013 – 2014: 九州大学, グリーンアジア国際リーダー教育センター, 助教
Review Section/Research Field
Principal Investigator
Basic Section 21050:Electric and electronic materials-related / Thin film/Surface and interfacial physical properties
Except Principal Investigator
Broad Section C / Basic Section 21050:Electric and electronic materials-related / Medium-sized Section 26:Materials engineering and related fields / Electronic materials/Electric materials
Keywords
Principal Investigator
ゲルマニウム / Ge-on-Insulator / 基板貼り合わせ / 移動度 / トンネルFET / 低消費電力 / 電子・電気材料 / ULSI / MOSFET / 半導体物性 / 電気・電子材料 … More
Except Principal Investigator
… More 半導体スピントロニクス / Ge-On-Insulator基板 / MIS型 / 近赤外発光 / トンネリング障壁高さ / シリコンゲルマニウム / 半導体スピントロにクス / 歪みシリコンゲルマニウム / ホイスラー合金 / トランジスタ / スピン伝導 / スピンMOSFET / スピン注入 / ゲルマニウム / マルチフェロイック材料 / マルチフェロイックス / 電子顕微鏡 / 薄膜 / 界面構造 / 界面 / 走査透過電子顕微鏡 / 走査電子顕微鏡 / 透過電子顕微鏡 / ひずみ解析 / 強誘電体 / 形状記憶合金 / 局所歪 / 局所歪み / Ge-光素子 / GOI / 電子密度 / 電子・電気材料 / CMOS / Siフォトニクス / 金属/半導体コンタクト / Ge光素子 Less
  • Research Projects

    (8 results)
  • Research Products

    (142 results)
  • Co-Researchers

    (9 People)
  •  中空ゲルマニウム構造に基づく高性能電子・光デバイス集積化技術の開発Principal Investigator

    • Principal Investigator
      山本 圭介
    • Project Period (FY)
      2024 – 2026
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      Kyushu University
  •  Developing Silicon Germanium Optical Spintronics

    • Principal Investigator
      浜屋 宏平
    • Project Period (FY)
      2024 – 2028
    • Research Category
      Grant-in-Aid for Scientific Research (S)
    • Review Section
      Broad Section C
    • Research Institution
      Osaka University
  •  Ge-On-Insulator基板を利用したMIS型近赤外発光素子の研究開発

    • Principal Investigator
      王 冬
    • Project Period (FY)
      2023 – 2025
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      Kyushu University
  •  The realization of steep slope tunnel FET on Ge-on-Insulator substratePrincipal Investigator

    • Principal Investigator
      YAMAMOTO Keisuke
    • Project Period (FY)
      2019 – 2020
    • Research Category
      Grant-in-Aid for Early-Career Scientists
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      Kyushu University
  •  Development of a germanium spin MOSFET

    • Principal Investigator
      Hamaya Kohei
    • Project Period (FY)
      2019 – 2023
    • Research Category
      Grant-in-Aid for Scientific Research (S)
    • Review Section
      Broad Section C
    • Research Institution
      Osaka University
  •  Electron Microscopy Analysis for Materials Interfaces –Development and Applications of Multidisciplinary Quantification Techniques for Atomic Structures and Electromagnetic Properties

    • Principal Investigator
      Akamine Hiroshi
    • Project Period (FY)
      2018 – 2020
    • Research Category
      Fund for the Promotion of Joint International Research (Fostering Joint International Research (B))
    • Review Section
      Medium-sized Section 26:Materials engineering and related fields
    • Research Institution
      Kyushu University
  •  Development of basic technology for Ge-CMOS integratable high-performance Ge optical devices

    • Principal Investigator
      Wang Dong
    • Project Period (FY)
      2014 – 2016
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Kyushu University
  •  Application research for high mobility Ge MOSFET by charge compensation at MOS interfacePrincipal Investigator

    • Principal Investigator
      YAMAMOTO Keisuke
    • Project Period (FY)
      2013 – 2014
    • Research Category
      Grant-in-Aid for Research Activity Start-up
    • Research Field
      Thin film/Surface and interfacial physical properties
    • Research Institution
      Kyushu University

All 2024 2023 2022 2021 2020 2019 2017 2016 2015 2014 2013 Other

All Journal Article Presentation Patent

  • [Journal Article] Development of Ge Isotropic Wet Etching Solution and its Application to High Quality Ge-on-Insulator Fabrication through the Etchback Method2024

    • Author(s)
      Shimizu Noboru、Wang Dong、Nakashima Hiroshi、Yamamoto Keisuke
    • Journal Title

      ECS Journal of Solid State Science and Technology

      Volume: 13 Issue: 4 Pages: 044001-044001

    • DOI

      10.1149/2162-8777/ad384b

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Journal Article] Ge-on-insulator fabrication based on Ge-on-nothing technology2024

    • Author(s)
      Yamamoto Keisuke、Wang Dong、Loo Roger、Porret Clement、Cho Jinyoun、Dessein Kristof、Depauw Valerie
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 63 Issue: 4 Pages: 04SP32-04SP32

    • DOI

      10.35848/1347-4065/ad2d07

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Journal Article] Fabrication and characterization of germanium n-MOS and n-MOSFET with thermally oxidized yttrium gate insulator: Formation of underlying germanium oxide and its electrical characteristics2023

    • Author(s)
      Wen Wei-Chen、Wang Dong、Nakashima Hiroshi、Yamamoto Keisuke
    • Journal Title

      Materials Science in Semiconductor Processing

      Volume: 162 Pages: 107504-107504

    • DOI

      10.1016/j.mssp.2023.107504

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Journal Article] Electrical properties of a low-temperature fabricated Ge-based top-gate MOSFET structure with epitaxial ferromagnetic Heusler-alloy Schottky-tunnel source and drain2023

    • Author(s)
      Yamamoto Keisuke、Matsuo Takuro、Yamada Michihiro、Wagatsuma Youya、Sawano Kentaro、Hamaya Kohei
    • Journal Title

      Materials Science in Semiconductor Processing

      Volume: 167 Pages: 107763-107763

    • DOI

      10.1016/j.mssp.2023.107763

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Journal Article] Schottky Barrier Height Control at Metal/Ge Interface by Insertion of Nitrogen Contained Amorphous Layer2021

    • Author(s)
      Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
    • Journal Title

      ECS transactions

      Volume: -

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K15028
  • [Journal Article] (Invited) Schottky Barrier Height Control at Metal/Ge Interface by Insertion of Nitrogen Contained Amorphous Layer2021

    • Author(s)
      Yamamoto Keisuke、Wang Dong、Nakashima Hiroshi
    • Journal Title

      ECS Transactions

      Volume: 102 Issue: 4 Pages: 63-71

    • DOI

      10.1149/10204.0063ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Journal Article] (Invited) Fabrication of Ge-on-Insulator By Epitaxial Growth and Ion-Implanted Exfoliation for Electronics and Optoelectronics Applications2021

    • Author(s)
      Yamamoto Keisuke、Wang Dong、Nakashima Hiroshi
    • Journal Title

      ECS Transactions

      Volume: 104 Issue: 4 Pages: 157-166

    • DOI

      10.1149/10404.0157ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Journal Article] Border-Trap Characterization for Ge Gate Stacks with Thin GeOX layer Using Deep-Level Transient Spectroscopy2020

    • Author(s)
      Hiroshi Nakashima, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang
    • Journal Title

      ECS transactions

      Volume: 98 Pages: 395-404

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K15028
  • [Journal Article] (Invited) Border-Trap Characterization for Ge Gate Stacks with Thin GeOx layer Using Deep-Level Transient Spectroscopy2020

    • Author(s)
      Nakashima Hiroshi、Wen Wei-Chen、Yamamoto Keisuke、Wang Dong
    • Journal Title

      ECS Transactions

      Volume: 98 Issue: 5 Pages: 395-404

    • DOI

      10.1149/09805.0395ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Journal Article] Interface trap and border trap characterization for Al2O3/GeOx/Ge gate stacks and influence of these traps on mobility of Ge p-MOSFET2020

    • Author(s)
      Wei-Chen Wen, Yuta Nagatomi, Hiroshi Akamine, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
    • Journal Title

      AIP Advances

      Volume: 10 Issue: 6 Pages: 065119-065119

    • DOI

      10.1063/5.0002100

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K15028, KAKENHI-PROJECT-19H05616
  • [Journal Article] High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al2O3 interlayer and its internal charge analysis2020

    • Author(s)
      Oka Ryusei、Yamamoto Keisuke、Akamine Hiroshi、Wang Dong、Nakashima Hiroshi、Hishiki Shigeomi、Kawamura Keisuke
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 59 Issue: SG Pages: SGGD17-SGGD17

    • DOI

      10.35848/1347-4065/ab6862

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18KK0134, KAKENHI-PROJECT-17H03237
  • [Journal Article] Conduction Type Control of Ge-on-Insulator: Combination of Smart-Cut(TM) and Defect Elimination2019

    • Author(s)
      Keisuke Yamamoto, Kohei Nakae, Hiroshi Akamine, Dong Wang, Hiroshi Nakashima, Md. M Alam, Kentarou Sawano, Zhongying Xue, Miao Zhang, Zengfeng Di
    • Journal Title

      ECS transactions

      Volume: 93 Issue: 1 Pages: 73-77

    • DOI

      10.1149/09301.0073ecst

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K15028, KAKENHI-PROJECT-19H05616, KAKENHI-PROJECT-17H03237
  • [Journal Article] Border-Trap Characterization for Ge Gate Stacks Using Deep-Level Transient Spectroscopy2019

    • Author(s)
      Hiroshi Nakashima, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang
    • Journal Title

      ECS transactions

      Volume: 92 Issue: 4 Pages: 3-10

    • DOI

      10.1149/09204.0003ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K15028, KAKENHI-PROJECT-19H05616, KAKENHI-PROJECT-17H03237
  • [Journal Article] Achievement of low parasitic resistance in Ge n-channel metal-oxide-semiconductor field-effect transistor using embedded TiN-source/drain structure2017

    • Author(s)
      Y. Nagatomi, T. Tateyama, S. Tanaka, K. Yamamoto, D. Wang, and H. Nakashima
    • Journal Title

      Semiconductor Science and Technology

      Volume: 32 Issue: 3 Pages: 035001-035001

    • DOI

      10.1088/1361-6641/32/3/035001

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Journal Article] Direct band gap light emission and detection at room temperature in bulk germanium diodes with HfGe/Ge/TiN structure2016

    • Author(s)
      D. Wang, T. Maekura, K. Yamamoto, and H. Nakashima
    • Journal Title

      Thin Solid Films

      Volume: 602 Pages: 43-47

    • DOI

      10.1016/j.tsf.2015.09.074

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-26289090
  • [Journal Article] Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks2016

    • Author(s)
      T. Kanashima, R. Yamashiro, M. Zenitaka, K. Yamamoto, D. Wang, J. Tadano, S. Yamada, H. Nohira, H. Nakashima, and K. Hamaya
    • Journal Title

      Materials Science in Semiconductor Processing

      Volume: - Pages: 260-264

    • DOI

      10.1016/j.mssp.2016.11.016

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26289090, KAKENHI-PROJECT-16H02333
  • [Journal Article] Mechanism of mobility enhancement in Ge p-channel metal-oxide-semiconductor field-effect transistor due to introduction of Al atoms into SiO2/GeO2 gate stack2016

    • Author(s)
      Y. Nagatomi, T. Tateyama, S. Tanaka, W.-C. Wen, T. Sakaguchi, K. Yamamoto, L. Zhao, D. Wang, and H. Nakashima
    • Journal Title

      Materials Science in Semiconductor Processing

      Volume: - Pages: 246-253

    • DOI

      10.1016/j.mssp.2016.11.014

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Journal Article] Effects of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes2016

    • Author(s)
      T. Maekura, K. Yamamoto, H. Nakashima, and D. Wang
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55(4S) Issue: 4S Pages: 04EH08-04EH08

    • DOI

      10.7567/jjap.55.04eh08

    • NAID

      210000146355

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-26289090
  • [Journal Article] Fabrication of asymmetric Ge Schottky tunneling source n-channel field-effect transistor and its characterization of tunneling conduction2016

    • Author(s)
      K. Yamamoto, H. Okamoto, D. Wang, and H. Nakashima
    • Journal Title

      Materials Science in Semiconductor Processing

      Volume: - Pages: 283-287

    • DOI

      10.1016/j.mssp.2016.09.024

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Journal Article] Electrical and structural properties of group-4 transition-metal nitride (TiN, ZrN, and HfN) contacts on Ge2015

    • Author(s)
      K. Yamamoto, R. Noguchi, M. Mitsuhara, M. Nishida, T. Hara, D. Wang, and H. Nakashima
    • Journal Title

      Journal of Applied Physics

      Volume: 118(11) Issue: 11

    • DOI

      10.1063/1.4930573

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-26289090
  • [Journal Article] Electrical Properties of Group 4 Metal-Nitride/Ge Contacts and the Application to Ge Optoelectronic Devices2015

    • Author(s)
      H. Nakashima, K. Yamamoto, and D. Wang
    • Journal Title

      The Electrochemical Society Transactions

      Volume: 69(10) Issue: 10 Pages: 55-66

    • DOI

      10.1149/06910.0055ecst

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-26289090
  • [Journal Article] Fabrication of PtGe/Ge contacts with high on/off ratio and its application to metal source/drain Ge p-channel MOSFETs2015

    • Author(s)
      Y. Nagatomi, S. Tanaka, Y. Nagaoka, K. Yamamoto, D. Wang, and H. Nakashima
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 54(7) Issue: 7 Pages: 070306-070306

    • DOI

      10.7567/jjap.54.070306

    • NAID

      210000145332

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-26289090
  • [Journal Article] Investigation of Al-PMA Effect on Al2O3/GeOX/Ge Gate Stack2014

    • Author(s)
      Y. Nagatomi, Y. Nagaoka, K. Yamamoto, D. Wang, H. Nakashima
    • Journal Title

      ECS Transactions

      Volume: 64 Issue: 6 Pages: 261-266

    • DOI

      10.1149/06406.0261ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25886010, KAKENHI-PROJECT-26289090
  • [Journal Article] Effect of Kr/O2ECR Plasma Oxidation on Electrical Properties of Al2O3/Ge Gate Stacked Fabricated by ALD2014

    • Author(s)
      Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
    • Journal Title

      Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials (SSDM2014)

      Volume: なし Pages: 10-11

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Journal Article] Role of an interlayer at a TiN/Ge contact to alleviate the intrinsic Fermi-level pinning position toward the conduction band edge2014

    • Author(s)
      K. Yamamoto, M. Mitsuhara, K. Hiidome, R. Noguchi, M. Nishida, D. Wang, and H. Nakashima
    • Journal Title

      Applied Physics Letters

      Volume: 104 Issue: 13 Pages: 288-291

    • DOI

      10.1063/1.4870510

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-25886010, KAKENHI-PROJECT-26289090
  • [Journal Article] Low-temperature fabrication of Y2O3/Ge gate stacks with ultrathin GeOx interlayer and low interface states density characterized by a reliable deep-level transient spectroscopy method2014

    • Author(s)
      D. Wang, Y. Nagatomi, S. Kojima, K. Yamamoto, H. Nakashima
    • Journal Title

      Thin Solid Films

      Volume: 557 Pages: 288-291

    • DOI

      10.1016/j.tsf.2013.10.065

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25886010, KAKENHI-PROJECT-26289090
  • [Journal Article] Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric fin type metal/germanium/metal structure2014

    • Author(s)
      D. Wang, T. Maekura, S. Kamezawa, K. Yamamoto, and H. Nakashima
    • Journal Title

      Applied Physics Letters

      Volume: 106(7) Issue: 7

    • DOI

      10.1063/1.4913261

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-26289090
  • [Journal Article] Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge contacts2013

    • Author(s)
      H. Nakashima, K. Yamamoto, D. Wang
    • Journal Title

      ECS Transactions

      Volume: 58 Issue: 9 Pages: 167-178

    • DOI

      10.1149/05809.0167ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25886010
  • [Journal Article] Fabrication of Metal-Nitride/Si Contactswith Low Electron Barrier Height2013

    • Author(s)
      K. Yamamoto, K. Asakawa, D. Wang, H. Nakashima
    • Journal Title

      ECS Transactions

      Volume: 58 Issue: 9 Pages: 53-59

    • DOI

      10.1149/05809.0053ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25886010
  • [Patent] スピンMOSFET2022

    • Inventor(s)
      山本 圭介、浜屋 宏平
    • Industrial Property Rights Holder
      国立大学法人九州大学、国立大学法人大阪大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2022-194902
    • Filing Date
      2022
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] Measurement of Fowler-Nordheim tunneling barrier height in Ge-MIS structures2023

    • Author(s)
      Y. J. Feng, K. Yamamoto, A. Honda, N. Shimizu, D. Wang
    • Organizer
      The 8th Asia Applied Physics Conference (2023 年(令和5年度) 応用物理学会九州支部学術講演会)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K03927
  • [Presentation] Study on the Performance of Metal S/D Ge n-MOSFET with Recessed Channel Structure2023

    • Author(s)
      H. Kuwazuru, S. Nasu, D. Wang, K. Yamamoto
    • Organizer
      13th International Workshop on New Group IV Semiconductor Nanoelectronics
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] Thermally oxidized Yttrium Oxide on Germanium for n-MOS Capacitor and Field-Effect Transistor2023

    • Author(s)
      K. Yamamoto, W.-C. Wen, D. Wang, and H. Nakashima
    • Organizer
      244th ECS meeting
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] Low Temperature (~210 °C) Fabrication of Ge MOS Capacitor using Plasma Oxidation and Oxi-Nitridation for the Interlayer Formation2023

    • Author(s)
      H. Kuwazuru, D. Wang, K. Yamamoto
    • Organizer
      14th International Workshop on New Group IV Semiconductor Nanoelectronics
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] リセスチャネル化によるメタルS/D型Ge n-MOSFETの電流駆動力向上(III)2023

    • Author(s)
      鍬釣 一、王 冬、山本 圭介
    • Organizer
      第84回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] Fabrication of a Ge gate stack using plasma irradiation and low-temperature annealing for Ge applications2023

    • Author(s)
      H. Kuwazuru, D. Wang, K. Yamamoto
    • Organizer
      14th International Workshop on New Group IV Semiconductor Nanoelectronics
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] Fabrication of Ge MOSFET at low temperature (~250℃) for spintronics application2022

    • Author(s)
      S. Nasu, T. Matsuo, K. Yamamoto, D. Wang
    • Organizer
      The 5th International Union of Materials Research Societies International Conference of Young Researchers on Advanced Materials
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] Novel group IV semiconductor materials and devices for beyond Si technology2022

    • Author(s)
      K. Yamamoto
    • Organizer
      The 5th International Union of Materials Research Societies International Conference of Young Researchers on Advanced Materials
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] Fabrication and Characterization of Ge n-MOS and n-MOSFET with Thermally Oxidized Yttrium Gate Insulator,2022

    • Author(s)
      W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima
    • Organizer
      9th International Symposium on Control of Semiconductor Interfaces
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] エッチバック法を用いたGe-on-Insulator作製に向けたウェットエッチング法の検討2021

    • Author(s)
      清水 昇, 山本 圭介, 王 冬, 中島 寛
    • Organizer
      2021年第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K15028
  • [Presentation] DLTS法によるGeゲートスタック中のトラップ解析2021

    • Author(s)
      中島 寛, Wei-Chen Wen, 山本 圭介, 王 冬
    • Organizer
      第26回 電子デバイス界面テクノロジー研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-19K15028
  • [Presentation] リセスチャネル化によるメタルS/D型Ge n-MOSFETの電流駆動力向上2021

    • Author(s)
      松尾 拓朗、山本 圭介、王 冬
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] High Interfacial and Film Qualities of Thermally Oxidized Y2O3 and Sc2O3 MOS Structures on Germanium2021

    • Author(s)
      K. Yamamoto, H. Kanakogi, W.-C. Wen, D. Wang, and H. Nakashima
    • Organizer
      2020年度東北大学電気通信研究所 共同プロジェクト研究発表会
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] GeスピンMOSFET実現に向けた低温(~250℃)デバイスプロセスの構築2021

    • Author(s)
      那須 新悟、松尾 拓朗、山本 圭介、王 冬
    • Organizer
      2021年度応用物理学会九州支部学術講演会
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] エッチバック法を用いたGe-on-Insulator作製に向けたウェットエッチング法の検討2021

    • Author(s)
      清水昇,山本圭介,王冬,中島寛
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] GeスピンMOSFETのための低温(~250°C)デバイスプロセスの構築2021

    • Author(s)
      松尾 拓朗、山本 圭介、王 冬
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] DLTS法によるGeゲートスタック中のトラップ解析2021

    • Author(s)
      中島寛, W.-C. Wen, 山本圭介, 王冬
    • Organizer
      第26回 電子デバイス界面テクノロジー研究会
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] Low-Temperature Fabrication of Ge MOS Capacitor with Wet Oxidized Yttrium Interlayer2021

    • Author(s)
      K. Yamamoto, K. Iseri, D. Wang, H. Nakashima
    • Organizer
      2021 International Conference on Solid State Device and Materials (SSDM 2021)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] (Invited) Fabrication of Ge-on-Insulator By Epitaxial Growth and Ion-Implanted Exfoliation for Electronics and Opt-Electronics Applications2021

    • Author(s)
      K. Yamamoto, D. Wang, H. Nakashima
    • Organizer
      240th ECS meeting
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] (Invited) Schottky Barrier Height Control at Metal/Ge Interface by Insertion of Nitrogen Contained Amorphous Layer2021

    • Author(s)
      K. Yamamoto, D. Wang, H. Nakashima
    • Organizer
      240th ECS meeting
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] Border-Trap Characterization for Ge Gate Stacks with Thin GeOX layer Using Deep-Level Transient Spectroscopy2020

    • Author(s)
      H. Nakashima, W.-C. Wen, K. Yamamoto, and D. Wang
    • Organizer
      PRiME 2020
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] Isotropic Wet Etching and Improving Surface Flatness of Ge for Etchback Ge-on-Insulator Fabrication2020

    • Author(s)
      Noboru Shimizu, Keisuke Yamamoto, Dong Wang, Hiroshi. Nakashima
    • Organizer
      PRiME 2020
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K15028
  • [Presentation] Isotropic Wet Etching and Improving Surface Flatness of Ge for Etchback Ge-on-Insulator Fabrication2020

    • Author(s)
      N. Shimizu, K. Yamamoto, D. Wang, and H. Nakashima
    • Organizer
      PRiME 2020
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] Fabrication and characterization of germanium gate stack with thermally oxidized yttrium and scandium dielectrics2020

    • Author(s)
      H Kanakogi, W.-C. Wen, K. Yamamoto, D. Wang, and H. Nakashima
    • Organizer
      22nd Cross Straits Symposium on Energy and Environmental Science and Technology
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] Thermally Oxidized Yttrium and Scandium Gate Dielectrics on Germanium with High Interfacial and Film Qualities2020

    • Author(s)
      H. Kanakogi, W.-C. Wen, K. Yamamoto, D. Wang, and H. Nakashima
    • Organizer
      2020 International Conference on Solid State Devices and Materials
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] Thermally Oxidized Yttrium and Scandium Gate Dielectrics on Germanium with High Interfacial and Film Qualities2020

    • Author(s)
      Hiroki Kanakogi, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
    • Organizer
      2020 International Conference on Solid State Device and Materials
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K15028
  • [Presentation] Border-Trap Characterization for Ge Gate Stacks with Thin GeOX layer Using Deep-Level Transient Spectroscopy2020

    • Author(s)
      Hiroshi Nakashima, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang
    • Organizer
      PRiME 2020
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K15028
  • [Presentation] Formation of Ge mirror plane with high speed wet etching for etchback Ge-on-Insulator fabrication2020

    • Author(s)
      N. Shimizu, K. Yamamoto, D. Wang, and H. Nakashima
    • Organizer
      22nd Cross Straits Symposium on Energy and Environmental Science and Technology
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] 新規電子デバイス応用に向けたGeゲートスタックの低温(<300°C)形成2019

    • Author(s)
      井芹 健人、温 偉辰、山本 圭介、王 冬、中島 寛
    • Organizer
      第80回応用物理学会秋季学術講演会, 北海道大学 札幌キャンパス
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] Border-Trap Characterization for Ge Gate Stacks Using Deep-Level Transient Spectroscopy2019

    • Author(s)
      H. Nakashima, W.-C. Wen, K. Yamamoto, D. Wang
    • Organizer
      236th ECS Meeting, Atlanta, GA, USA
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] Border-Trap Evaluation for SiO2/GeO2/Ge Gate Stacks Using Deep-Level Transient Spectroscopy2019

    • Author(s)
      H. Nakashima, W.-C. Wen, K. Yamamoto, D. Wang
    • Organizer
      8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8), 東北大学 片平キャンパス
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] Ge-on-Insulator基板上へのMOSデバイスの作製と評価2019

    • Author(s)
      清水 昇、山本 圭介、王 冬、中島 寛
    • Organizer
      2019年度応用物理学会九州支部学術講演会、熊本大学 黒髪南地区
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] 新規電子デバイス応用に向けたGeゲートスタックの低温(<300°C)形成2019

    • Author(s)
      井芹 健人, 温 偉辰, 山本 圭介, 王 冬, 中島 寛
    • Organizer
      2019年第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K15028
  • [Presentation] Low temperature (<300oC Fabrication of Ge MOS Structure for Advanced Electronic Devices2019

    • Author(s)
      Kento Iseri, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
    • Organizer
      2019 International Conference on Solid State Device and Materials (SSDM 2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K15028
  • [Presentation] Study on Position of Border Traps in Al2O3/GeOx/p-Ge Gate Stacks Using Deep-Level Transient Spectroscopy2019

    • Author(s)
      W.-C. Wen, K. Yamamoto, D. Wang H. Nakashima
    • Organizer
      8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8), 東北大学 片平キャンパス
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] Evaluation of Border Traps in Al2O3/GeOx/p-Ge Stacks Using Deep-Level Transient Spectroscopy2019

    • Author(s)
      Wei-Chen Wen, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
    • Organizer
      2019年第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-19K15028
  • [Presentation] Border Trap Evaluation for Al2O3/GeOX/p-Ge Gate Stacks using Deep-Level Transient Spectroscopy2019

    • Author(s)
      W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima
    • Organizer
      ISTDM / ICSI 2019 Conference, Madison, USA
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] Conduction Type Control of Ge-on-Insulator: Combination of Smart-Cut and Defect Elimination2019

    • Author(s)
      Keisuke Yamamoto, Kohei Nakae, Hiroshi Akamine, Dong Wang, Hiroshi Nakashima, Md. M Alam, Kentarou Sawano, Zhongying Xue, Miao Zhang, Zengfeng Di
    • Organizer
      2nd Joint ISTDM / ICSI 2019 Conference
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K15028
  • [Presentation] Border-Trap Evaluation for SiO2/GeO2/Ge Gate Stacks Using Deep-Level Transient Spectroscopy2019

    • Author(s)
      Hiroshi Nakashima, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang
    • Organizer
      8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K15028
  • [Presentation] Border-Trap Characterization for Ge Gate Stacks Using Deep-Level Transient Spectroscopy2019

    • Author(s)
      Hiroshi Nakashima, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang
    • Organizer
      236th ECS meeting
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K15028
  • [Presentation] Study on Position of Border Traps in Al2O3/GeOx/p-Ge Gate Stacks Using Deep-Level Transient Spectroscopy2019

    • Author(s)
      Wei-Chen Wen, Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang
    • Organizer
      8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K15028
  • [Presentation] Evaluation of Border Traps in Al2O3/GeOx/p-Ge Stacks Using Deep-Level Transient Spectroscopy2019

    • Author(s)
      W.-C. Wen、K. Yamamoto、D. Wang、H. Nakashima
    • Organizer
      第80回応用物理学会秋季学術講演会, 北海道大学 札幌キャンパス
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] Border Trap Evaluation for Al2O3/GeOX/p-Ge Gate Stacks using Deep-Level Transient Spectroscopy2019

    • Author(s)
      Wei-Chen Wen, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
    • Organizer
      2nd Joint ISTDM / ICSI 2019 Conference
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19K15028
  • [Presentation] Low temperature (<300°C) Fabrication of Ge MOS Structure for Advanced Electronic Devices2019

    • Author(s)
      K. Iseri, W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima
    • Organizer
      2019 International Conference on Solid State Device and Materials (SSDM 2019)、名古屋大学 東山キャンパス
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] Ge-on-Insulator基板上へのMOSデバイスの作製と評価2019

    • Author(s)
      清水 昇, 山本 圭介, 王 冬, 中島 寛
    • Organizer
      2019年(令和元年度)応用物理学会九州支部学術講演会
    • Data Source
      KAKENHI-PROJECT-19K15028
  • [Presentation] Conduction Type Control of Ge-on-Insulator: Combination of Smart-Cut and Defect Elimination2019

    • Author(s)
      K. Yamamoto, K. Nakae, H. Akamine, D. Wang, H. Nakashima, Md. M Alam, K. Sawano, Z. Xue, M. Zhang, Z. Di
    • Organizer
      2nd Joint ISTDM / ICSI 2019 Conference, Madison, WI, USA
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-19H05616
  • [Presentation] 非晶質Zr-Ge-N層上への金属堆積による低抵抗Geコンタクトの形成2017

    • Author(s)
      岡本 隼人、山本 圭介、王 冬、中島 寛
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-17
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer2017

    • Author(s)
      K. Yamamoto, H. Okamoto, D. Wang, and H. Nakashima
    • Organizer
      10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
    • Place of Presentation
      Tohoku University, Sendai, Japan
    • Year and Date
      2017-02-13
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Effect of n-type doping level on direct band gap light emission intensity for asymmetric metal/Ge/metal diodes2017

    • Author(s)
      T. Maekura, C. Motoyama, K. Tanaka, K. Yamamoto, H. Nakashima, and D. Wang
    • Organizer
      10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
    • Place of Presentation
      Tohoku University, Sendai, Japan
    • Year and Date
      2017-02-13
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Sbドーピング基板を用いた非対称-金属/Ge/金属構造光素子の作製・特性評価2017

    • Author(s)
      前蔵 貴行、本山 千里、田中 健太郎、山本 圭介、中島 寛、王 冬
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-16
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] ゲートスタック中へのAl 導入によるGe p-MOSFET の移動度向上機構2017

    • Author(s)
      永冨 雄太、織田 知輝、坂口 大成、山本 圭介、王 冬、中島 寛
    • Organizer
      2017年第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜
    • Year and Date
      2017-03-16
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] 非晶質Zr-Ge-N層上への金属堆積による低抵抗Geコンタクトの形成2016

    • Author(s)
      岡本 隼人、山本 圭介、王 冬、中島 寛
    • Organizer
      2016年秋季第77回応用物理学会学術講演会
    • Place of Presentation
      朱鷺メッセ:新潟コンベンションセンター
    • Year and Date
      2016-09-16
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Achievement of low parasitic resistance in Ge n-MOSFET with embedded TiN-source/drain structure2016

    • Author(s)
      T. Tateyama, Y. Nagatomi, S. Tanaka, K. Yamamoto, D. Wang, H. Nakashima
    • Organizer
      平成28(2016)年度応用物理学会九州支部学術講演会
    • Place of Presentation
      長崎県対馬市 対馬市交流センター
    • Year and Date
      2016-12-03
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] 金属/Ge接合及びn+/Ge接合を用いたGeトンネルFETの作製と評価2016

    • Author(s)
      山本 圭介、岡本 隼人、王 冬、中島 寛
    • Organizer
      2016年第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学 大岡山キャンパス
    • Year and Date
      2016-03-20
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Influences of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes2016

    • Author(s)
      Takayuki Maekura, Chisato Motoyama, Keisuke Yamamoto, Hiroshi Nakashima, Dong Wang
    • Organizer
      9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
    • Place of Presentation
      Tohoku University
    • Year and Date
      2016-01-12
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Al/SiO2/GeO2/Geゲートスタックに於ける界面ダイポールの生成と消失2016

    • Author(s)
      永冨 雄太、建山 知輝、坂口 大成、山本 圭介、王 冬、中島 寛
    • Organizer
      2016年秋季第77回応用物理学会学術講演会
    • Place of Presentation
      朱鷺メッセ:新潟コンベンションセンター
    • Year and Date
      2016-09-15
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] メタルS/D型Ge n-MOSFETの寄生抵抗低減2016

    • Author(s)
      建山 知輝、永冨 雄太、田中 慎太郎、山本 圭介、王 冬、中島 寛
    • Organizer
      2016年第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学 大岡山キャンパス
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Mechanism of mobility enhancement in Ge p-MOSFET due to introduction of Al atoms in SiO2/GeO2 gate stacks2016

    • Author(s)
      Yuta Nagatomi, Shintaro Tanaka, Tomoki Tateyama, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
    • Organizer
      9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
    • Place of Presentation
      Tohoku University
    • Year and Date
      2016-01-11
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Ge 光素子における基板キャリア密度と伝導型が及ぼす発光特性への影響2016

    • Author(s)
      田中 健太郎, 前蔵 貴行, 本山 千里, 王 冬, 山本 圭介, 中島 寛
    • Organizer
      平成28(2016)年度応用物理学会九州支部学術講演会
    • Place of Presentation
      長崎県対馬市 対馬市交流センター
    • Year and Date
      2016-12-04
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] ゲートスタック中へのAl 導入によるp-MOSFET の移動度向上機構2016

    • Author(s)
      坂口 大成, 建山 知輝, 永冨 雄太, 山本 圭介, 王 冬, 中島 寛
    • Organizer
      平成28(2016)年度応用物理学会九州支部学術講演会
    • Place of Presentation
      長崎県対馬市 対馬市交流センター
    • Year and Date
      2016-12-03
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer2016

    • Author(s)
      H. Okamoto, K. Yamamoto, D. Wang, and H. Nakashima
    • Organizer
      2016 International Conference on Solid State Devices and Materiaals (SSDM2016)
    • Place of Presentation
      Tsukuba International Congress Center, Tsukuba, Japan
    • Year and Date
      2016-09-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] TOF-SIMS and XPS analyses for investigation of Al post-metallization annealing effect for Ge MOS capacitors with SiO2/GeO2 bilayer passivation2016

    • Author(s)
      W.-C. Wen, Y. Nagatomi, L. Zhao, K. Yamamoto, D. Wang, H. Nakashima
    • Organizer
      平成28(2016)年度応用物理学会九州支部学術講演会
    • Place of Presentation
      長崎県対馬市 対馬市交流センター
    • Year and Date
      2016-12-03
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Electrical Properties of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer2016

    • Author(s)
      H. Nakashima, H. Okamoto, K. Yamamoto, and D. Wang
    • Organizer
      JSPS Core-to Core Program "Atomically Controlled Processsing for Ultralarge Scale Integration"
    • Place of Presentation
      Forschungszentrum J&uuml;lich, Germany
    • Year and Date
      2016-11-24
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Mobility enhancement in Ge p-MOSFET due to introduction of Al atoms in SiO2/GeO2gate stacks2016

    • Author(s)
      Y. Nagatomi, S. Tanaka, T. Tateyama, K. Yamamoto, D. Wang, and H. Nakashima
    • Organizer
      7th Int. Symp. on Control of Semiconductor Interfaces and Int. SiGe Technology and Device Meeting 2016
    • Place of Presentation
      Noyori Conference Hall, Nagoya University, Chikusa-ku, Nagoya, Japan
    • Year and Date
      2016-06-08
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Characterization of Ge Tunnel FET with Metal/Ge Junction2016

    • Author(s)
      K. Yamamoto, H. Okamoto, D. Wang, and H. Nakashima
    • Organizer
      7th Int. Symp. on Control of Semiconductor Interfaces and Int. SiGe Technology and Device Meeting 2016
    • Place of Presentation
      Noyori Conference Hall, Nagoya University, Chikusa-ku, Nagoya, Japan
    • Year and Date
      2016-06-09
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] 反応性スパッタリングで形成したZrN 物性とGe とのコンタクト特性2016

    • Author(s)
      板屋 航, 岡本 隼人, 山本 圭介, 王 冬, 中島 寛
    • Organizer
      平成28(2016)年度応用物理学会九州支部学術講演会
    • Place of Presentation
      長崎県対馬市 対馬市交流センター
    • Year and Date
      2016-12-03
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Influence of Al-PMA for fin type asymmetric metal/germanium/metal diodes2016

    • Author(s)
      C. Motoyama, T. Maekura, K. Tanaka, D. Wang, K. Yamamoto, H. Nakashima
    • Organizer
      平成28(2016)年度応用物理学会九州支部学術講演会
    • Place of Presentation
      長崎県対馬市 対馬市交流センター
    • Year and Date
      2016-12-03
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] ゲートスタック中へのAl導入によるGe p-MOSFETの正孔移動度向上2016

    • Author(s)
      永冨 雄太、田中 慎太郎、建山 知輝、山本 圭介、王 冬、中島 寛
    • Organizer
      2016年第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学 大岡山キャンパス
    • Year and Date
      2016-03-20
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Electrical properties of metal-nitride/Ge contacts and the application to Ge optoelectronic devices2015

    • Author(s)
      Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang
    • Organizer
      The 2nd International Conference & Exhibition for Nanopia
    • Place of Presentation
      Changwon Exhibition Convention Center, Gyeongsangnam-do, Korea
    • Year and Date
      2015-11-12
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] PtGe-Source/Drain Ge p-MOSFET with High On/Off Ratio and Low Parasitic Resistance2015

    • Author(s)
      Shintaro Tanaka, Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
    • Organizer
      2015 International Conference on Solid State Devices and Materiaals (SSDM2015)
    • Place of Presentation
      Sapporo Convention Center, Japan
    • Year and Date
      2015-09-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Direct-bandgap light emission and detection at room temperature in bulk-Ge diodes with HfGe/Ge/TiN structure2015

    • Author(s)
      Dong Wang, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima
    • Organizer
      9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)
    • Place of Presentation
      The University of Montreal, Quebec, Canada
    • Year and Date
      2015-05-20
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] 非対称-金属/Ge/金属構造を有する光素子の試作と特性評価2015

    • Author(s)
      前蔵 貴行, 山本 圭介, 王 冬, 中島 寛
    • Organizer
      2015年第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2015-03-11
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Influences of Metal/Ge Contact and Surface Passivation on Light Emission and Detection for Asymmetric Metal/Ge/Metal Diodes2015

    • Author(s)
      Takayuki Maekura, Dong Wang, Keisuke Yamamoto, Hiroshi Nakashima
    • Organizer
      2015 International Conference on Solid State Devices and Materiaals (SSDM2015)
    • Place of Presentation
      Sapporo Convention Center, Japan
    • Year and Date
      2015-09-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Effect of Al Post Metallization Annealing on Al2O3/GeO2/Ge Gate Stack2015

    • Author(s)
      Yuta Nagatomi, Yuichi Nagaoka, Shintaro Tanaka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
    • Organizer
      8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
    • Place of Presentation
      Tohoku University
    • Year and Date
      2015-01-30
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Electrical characterization of SiGe-on-insulator fabricated using Ge condensation by dry oxidation2015

    • Author(s)
      Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang
    • Organizer
      American Vacuum Society (AVS) Shanghai Thin Film Conference
    • Place of Presentation
      Fuxuan Hotel, Shanghai, China
    • Year and Date
      2015-10-24
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Electrical Properties of Group 4 Metal-Nitride/Ge Contacts and the Application to Ge Optoelectronic Devices2015

    • Author(s)
      Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang
    • Organizer
      228th ECS Meeting
    • Place of Presentation
      Phoenix, AZ, USA
    • Year and Date
      2015-10-12
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Contact Formation for Metal Source/Drain Ge-CMOS2015

    • Author(s)
      Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang, Masatoshi Mitsuhara, Ryutaro Noguchi, Keisuke Hiidome, Minoru Nishida
    • Organizer
      9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)
    • Place of Presentation
      The University of Montreal, Quebec, Canada
    • Year and Date
      2015-05-19
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Electrical Properties of Metal/Ge Contacts with Nitrogen-Contained Amorphous Interlayers2015

    • Author(s)
      Keisuke Yamamoto, Ryutaro Noguchi, Masatoshi Mitsuhara, Minoru Nishida, Toru Hara, Dong Wang, Hiroshi Nakashima
    • Organizer
      8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
    • Place of Presentation
      Tohoku University
    • Year and Date
      2015-01-29
    • Invited
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] ALDとECRプラズマ酸化による酸化膜固定電荷密度の制御2015

    • Author(s)
      永冨 雄太, 長岡 裕一, 田中 慎太郎, 山本 圭介, 王 冬, 中島 寛
    • Organizer
      2015年第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2015-03-14
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Barrier Height Modulation for Metal/Ge Contacts with Nitrogen-Contained Amorphous Interlayers2015

    • Author(s)
      Keisuke Yamamoto, Ryutaro Noguchi, Masatoshi Mitsuhara, Minoru Nishida, Toru Hara, Dong Wang, Hiroshi Nakashima
    • Organizer
      9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)
    • Place of Presentation
      The University of Montreal, Quebec, Canada
    • Year and Date
      2015-05-19
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Direct band gap light emission and detection in lateral HfGe/Ge/TiN diodes2015

    • Author(s)
      Dong Wang, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima
    • Organizer
      American Vacuum Society (AVS) Shanghai Thin Film Conference
    • Place of Presentation
      Fuxuan Hotel, Shanghai, China
    • Year and Date
      2015-10-24
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] 低い正孔障壁を有するPtGe/Geコンタクトの作製とメタルS/D型Ge p-MOSFETへの適用2015

    • Author(s)
      永冨 雄太, 田中 慎太郎, 長岡 裕一, 山本 圭介, 王 冬, 中島 寛
    • Organizer
      シリコン材料・デバイス研究会
    • Place of Presentation
      名古屋大学
    • Year and Date
      2015-06-19
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] TiN/Geコンタクトにおける低電子障壁発現機構の解明(II)2014

    • Author(s)
      山本 圭介, 光原 昌寿, 吹留 佳祐, 野口 竜太郎, 西田 稔, 王 冬, 中島 寛
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学(神奈川県相模原市)
    • Data Source
      KAKENHI-PROJECT-25886010
  • [Presentation] Contact properties of group IV metal-nitrides(TiN, ZrN, HfN) on Ge2014

    • Author(s)
      Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang, Masatoshi Mitsuhara, Ryutaro Noguchi, Keisuke Hiidome, Minoru Nishida
    • Organizer
      JSPS Core-to-Core Program,“Atomically Controlled Processsing for Ultralarge Scale Integration”
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      2014-11-03
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Al2O3/GeOx/GeゲートスタックにおけるAl-PMA効果の調査2014

    • Author(s)
      永冨 雄太, 長岡 裕一, 山本 圭介, 王 冬, 中島 寛
    • Organizer
      電子情報通信学会 シリコン材料・デバイス研究会
    • Place of Presentation
      名古屋大学(愛知県名古屋市)
    • Year and Date
      2014-06-20
    • Data Source
      KAKENHI-PROJECT-25886010
  • [Presentation] Fabrication of Metal-Nitride/Ge Contacts with Extremely Low Electron Barrier Height and Its Clarification of the Physical Origin2014

    • Author(s)
      K. Yamamoto, D. Wang, H. Nakashima
    • Organizer
      7th International WorkShop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      東北大学(宮城県仙台市)
    • Data Source
      KAKENHI-PROJECT-25886010
  • [Presentation] Fermi Level Pinning Alleviation at the TiN, ZrN, and HfN/Ge Interfaces2014

    • Author(s)
      Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
    • Organizer
      7th International Silicon-Germanium Technology and Device Meeting
    • Place of Presentation
      Singapore
    • Year and Date
      2014-06-03
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] ALDにより形成したAl2O3/Geゲートスタックに於けるKr/O2ECRプラズマ酸化効果2014

    • Author(s)
      長岡 裕一, 永冨 雄太, 山本 圭介, 王 冬, 中島 寛
    • Organizer
      2014年秋季第75回応用物理学会学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-20
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Al2O3/GeOx/Geゲートスタックに於けるAl-PMA効果の調査2014

    • Author(s)
      永冨 雄太, 長岡 裕一, 山本 圭介, 王 冬, 中島 寛
    • Organizer
      電子情報通信学会 シリコン材料・デバイス研究会 (応用物理学会, シリコンテクノロジー分科会との合同開催)
    • Place of Presentation
      名古屋大学
    • Year and Date
      2014-06-19
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] 非対称-金属/Ge/金属素子の試作とその発光特性2014

    • Author(s)
      亀沢 翔, 花田 尊徳, 山本 圭介, 王 冬, 中島 寛
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学(神奈川県相模原市)
    • Data Source
      KAKENHI-PROJECT-25886010
  • [Presentation] Al2O3/Ge形成後のプラズマ酸化によるゲートスタックの低温形成2014

    • Author(s)
      永冨 雄太, 長岡 裕一, 山本 圭介, 王 冬, 中島 寛
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学(神奈川県相模原市)
    • Data Source
      KAKENHI-PROJECT-25886010
  • [Presentation] Investigation of Al-PMA Effect on Al2O3/GeOX/Ge Gate Stack2014

    • Author(s)
      Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
    • Organizer
      226th ECS Meeting
    • Place of Presentation
      Cancun, Mexico
    • Year and Date
      2014-10-07
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] 非晶質Ge界面層とNによるGeコンタクトの外因性準位とSファクターの変調2014

    • Author(s)
      山本 圭介, 王 冬, 中島 寛
    • Organizer
      2014年秋季第75回応用物理学会学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-20
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Fabrication of MOS and Light Emitting Devices Using Contacts with Low Electron and Hole Barrier Heights2014

    • Author(s)
      H. Nakashima, K. Yamamoto, D. Wang
    • Organizer
      7th International WorkShop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      東北大学(宮城県仙台市)
    • Invited
    • Data Source
      KAKENHI-PROJECT-25886010
  • [Presentation] n形3C-SiCへのゲートスタックの低温形成2014

    • Author(s)
      山本 裕介, 村山 亮介, 山本 圭介, 王 冬, 中島 寛, 菱木 繁臣, 川村 啓介
    • Organizer
      2014年秋季第75回応用物理学会学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-17
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Effect of Kr/O2ECR Plasma Oxidation on Electrical Properties of Al2O3/Ge Gate Stacked Fabricated by ALD2014

    • Author(s)
      Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
    • Organizer
      2014 International Conference on Solid State Devices and Materials (SSDM2014)
    • Place of Presentation
      Tsukuba International Congress Center
    • Year and Date
      2014-09-10
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure2014

    • Author(s)
      Dong Wang, Sho Kamezawa, Keisuke Yamamoto, Hiroshi Nakashima
    • Organizer
      7th International Silicon-Germanium Technology and Device Meeting
    • Place of Presentation
      Singapore
    • Year and Date
      2014-06-03
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] バルクGe発光素子のデバイス構造による発光効率の変化2014

    • Author(s)
      前蔵 貴行, 山本 圭介, 王 冬, 中島 寛
    • Organizer
      2014年応用物理学会九州支部学術講演会
    • Place of Presentation
      大分大学
    • Year and Date
      2014-12-07
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] 原子層堆積法により形成したAl2O3/GeゲートスタックにおけるAl堆積後熱処理の有効性2014

    • Author(s)
      田中 慎太郎, 長岡 裕一, 永冨 雄太, 山本 圭介, 王 冬, 中島 寛
    • Organizer
      2014年応用物理学会九州支部学術講演会
    • Place of Presentation
      大分大学
    • Year and Date
      2014-12-06
    • Data Source
      KAKENHI-PROJECT-26289090
  • [Presentation] Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge contacts2013

    • Author(s)
      H. Nakashima, K. Yamamoto, D. Wang
    • Organizer
      224th ECS Meeting
    • Place of Presentation
      アメリカ・サンフランシスコ
    • Invited
    • Data Source
      KAKENHI-PROJECT-25886010
  • [Presentation] Fabrication of Metal-Nitride/Si Contactswith Low Electron Barrier Height2013

    • Author(s)
      K. Yamamoto, K. Asakawa, D. Wang, H. Nakashima
    • Organizer
      224th ECS Meeting
    • Place of Presentation
      アメリカ・サンフランシスコ
    • Data Source
      KAKENHI-PROJECT-25886010
  • [Presentation] Contact properties of group IV metal-nitrides (TiN, ZrN, HfN) on Ge

    • Author(s)
      H. Nakashima, K. Yamamoto, D. Wang, M. Mitsuhara, R. Noguchi, K. Hiidome, N. Nishida
    • Organizer
      JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration
    • Place of Presentation
      ベルギー・ルーヴェン
    • Year and Date
      2014-11-13 – 2014-11-14
    • Invited
    • Data Source
      KAKENHI-PROJECT-25886010
  • [Presentation] ZrN, HfN/Geコンタクトの電気特性と界面微細構造解析

    • Author(s)
      野口 竜太郎,光原 昌寿,山本 圭介,西田 稔,中島 寛,原 徹
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学(北海道札幌市)
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-25886010
  • [Presentation] ALDにより形成したAl2O3/Geゲートスタックに於けるKr/O2 ECRプラズマ酸化効果

    • Author(s)
      長岡 裕一,永冨 雄太,山本 圭介,王 冬,中島 寛
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学(北海道札幌市)
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-25886010
  • [Presentation] Effect of Kr/O2 mixed ECR plasma oxidation on electrical properties of Al2O3/Ge gate stacks fabricated by ALD

    • Author(s)
      Y. Nagatomi, Y. Nagaoka, K. Yamamoto, D. Wang, H. Nakashima
    • Organizer
      2014 International Conference on Solid State Device and Materials (SSDM 2014)
    • Place of Presentation
      つくば国際会議場(茨城県つくば市)
    • Year and Date
      2014-09-08 – 2014-09-11
    • Data Source
      KAKENHI-PROJECT-25886010
  • [Presentation] ALDとECRプラズマ酸化による酸化膜固定電荷密度の制御

    • Author(s)
      永冨 雄太, 長岡 裕一, 田中 慎太郎, 山本 圭介, 王 冬, 中島 寛
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス(神奈川県平塚市)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-25886010
  • [Presentation] Effect of Al post metallization annealing on Al2O3/GeOx/Ge gate stacks

    • Author(s)
      Y. Nagatomi, Y. Nagaoka, S. Tanaka, K. Yamamoto, D. Wang, H. Nakashima
    • Organizer
      8th International WorkShop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      東北大学(宮城県仙台市)
    • Year and Date
      2015-01-29 – 2015-01-30
    • Data Source
      KAKENHI-PROJECT-25886010
  • [Presentation] 非晶質Ge界面層とNによるGeコンタクトの外因性準位とSファクターの変調

    • Author(s)
      山本 圭介,王 冬,中島 寛
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学(北海道札幌市)
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-25886010
  • [Presentation] n-ウェルの形成のためのGe基板上へのSb拡散

    • Author(s)
      米田 亮太, 山本 圭介, 中島 寛
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス(神奈川県平塚市)
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-25886010
  • [Presentation] Electrical Properties of Metal/Ge contacts with Nitrogen-Contained Amorphous Interlayers

    • Author(s)
      K. Yamamoto, R. Noguchi, M. Mitsuhara, M. Nishida, T. Hara, D. Wang, H. Nakashima
    • Organizer
      8th International WorkShop on New Group IV Semiconductor Nanoelectronics
    • Place of Presentation
      東北大学(宮城県仙台市)
    • Year and Date
      2015-01-29 – 2015-01-30
    • Invited
    • Data Source
      KAKENHI-PROJECT-25886010
  • [Presentation] Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces

    • Author(s)
      K. Yamamoto, D. Wang, H. Nakashima
    • Organizer
      7th International Silicon-Germanium Technology and Device Meeting (ISTDM 2014)
    • Place of Presentation
      シンガポール
    • Year and Date
      2014-06-02 – 2014-06-04
    • Data Source
      KAKENHI-PROJECT-25886010
  • [Presentation] Investigation of Al-PMA Effect on Al2O3/GeOX/Ge Gate Stack

    • Author(s)
      Y. Nagatomi, Y. Nagaoka, K. Yamamoto, D. Wang, H. Nakashima
    • Organizer
      226th ECS Meeting
    • Place of Presentation
      メキシコ・カンクン
    • Year and Date
      2014-10-05 – 2014-10-10
    • Data Source
      KAKENHI-PROJECT-25886010
  • 1.  Wang Dong (10419616)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 60 results
  • 2.  Hamaya Kohei (90401281)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 1 results
  • 3.  澤野 憲太郎 (90409376)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 2 results
  • 4.  HAMAMOTO Kiichi (70404027)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 5.  Akamine Hiroshi (40804737)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 1 results
  • 6.  中島 寛 (70172301)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 59 results
  • 7.  村上 恭和 (30281992)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 8.  西田 稔 (90183540)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results
  • 9.  MITSUHARA Masatoshi
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 2 results

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