Yamamoto Keisuke 山本圭介

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YAMAMOTO Keisuke 山本圭介

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Researcher Number	20706387
Other IDs
Affiliation (Current)	2025: 熊本大学, 半導体・デジタル研究教育機構, 教授
Affiliation (based on the past Project Information) *help	2025: 熊本大学, 半導体・デジタル研究教育機構, 教授 2022 – 2024: 九州大学, 総合理工学研究院, 准教授 2018 – 2021: 九州大学, 総合理工学研究院, 助教 2016: 九州大学, 総合理工学研究科, 助教 2013 – 2014: 九州大学, グリーンアジア国際リーダー教育センター, 助教
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related / Thin film/Surface and interfacial physical properties Except Principal Investigator Broad Section C / Basic Section 21050:Electric and electronic materials-related / Medium-sized Section 26:Materials engineering and related fields / Electronic materials/Electric materials
Keywords	Principal Investigator ゲルマニウム / Ge-on-Insulator / 基板貼り合わせ / 移動度 / トンネルFET / 低消費電力 / 電子・電気材料 / ULSI / MOSFET / 半導体物性 / 電気・電子材料 … More Except Principal Investigator … More 半導体スピントロニクス / Ge-On-Insulator基板 / MIS型 / 近赤外発光 / トンネリング障壁高さ / スピン注入・検出 / シリコンゲルマニウム / 半導体スピントロにクス / 歪みシリコンゲルマニウム / ホイスラー合金 / トランジスタ / スピン伝導 / スピンMOSFET / スピン注入 / ゲルマニウム / マルチフェロイック材料 / マルチフェロイックス / 電子顕微鏡 / 薄膜 / 界面構造 / 界面 / 走査透過電子顕微鏡 / 走査電子顕微鏡 / 透過電子顕微鏡 / ひずみ解析 / 強誘電体 / 形状記憶合金 / 局所歪 / 局所歪み / Ge-光素子 / GOI / 電子密度 / 電子・電気材料 / CMOS / Siフォトニクス / 金属/半導体コンタクト / Ge光素子 Less

中空ゲルマニウム構造に基づく高性能電子・光デバイス集積化技術の開発Principal Investigator
- Principal Investigator
  
  山本圭介
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Kyushu University
Developing Silicon Germanium Optical Spintronics
- Principal Investigator
  
  浜屋宏平
- Project Period (FY)
  2024 – 2028
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Review Section
  
  Broad Section C
- Research Institution
  The University of Osaka
Ge-On-Insulator基板を利用したMIS型近赤外発光素子の研究開発
- Principal Investigator
  
  王冬
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Kyushu University
The realization of steep slope tunnel FET on Ge-on-Insulator substratePrincipal Investigator
- Principal Investigator
  
  YAMAMOTO Keisuke
- Project Period (FY)
  2019 – 2020
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Kyushu University
Development of a germanium spin MOSFET
- Principal Investigator
  
  Hamaya Kohei
- Project Period (FY)
  2019 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Review Section
  
  Broad Section C
- Research Institution
  Osaka University
Electron Microscopy Analysis for Materials Interfaces –Development and Applications of Multidisciplinary Quantification Techniques for Atomic Structures and Electromagnetic Properties
- Principal Investigator
  
  Akamine Hiroshi
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Fund for the Promotion of Joint International Research (Fostering Joint International Research (B))
- Review Section
  
  Medium-sized Section 26:Materials engineering and related fields
- Research Institution
  Kyushu University
Development of basic technology for Ge-CMOS integratable high-performance Ge optical devices
- Principal Investigator
  
  Wang Dong
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kyushu University
Application research for high mobility Ge MOSFET by charge compensation at MOS interfacePrincipal Investigator
- Principal Investigator
  
  YAMAMOTO Keisuke
- Project Period (FY)
  2013 – 2014
- Research Category
  
  Grant-in-Aid for Research Activity Start-up
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Kyushu University

All 2024 2023 2022 2021 2020 2019 2017 2016 2015 2014 2013 Other

All Journal Article Presentation Patent

[Journal Article] Development of Ge Isotropic Wet Etching Solution and its Application to High Quality Ge-on-Insulator Fabrication through the Etchback Method2024
- Author(s)
  Shimizu Noboru、Wang Dong、Nakashima Hiroshi、Yamamoto Keisuke
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 13 Issue: 4 Pages: 044001-044001
- DOI
  10.1149/2162-8777/ad384b
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H05616
[Journal Article] Ge-on-insulator fabrication based on Ge-on-nothing technology2024
- Author(s)
  Yamamoto Keisuke、Wang Dong、Loo Roger、Porret Clement、Cho Jinyoun、Dessein Kristof、Depauw Valerie
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 63 Issue: 4 Pages: 04SP32-04SP32
- DOI
  10.35848/1347-4065/ad2d07
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H05616
[Journal Article] Fabrication and characterization of germanium n-MOS and n-MOSFET with thermally oxidized yttrium gate insulator: Formation of underlying germanium oxide and its electrical characteristics2023
- Author(s)
  Wen Wei-Chen、Wang Dong、Nakashima Hiroshi、Yamamoto Keisuke
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 162 Pages: 107504-107504
- DOI
  10.1016/j.mssp.2023.107504
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H05616
[Journal Article] Electrical properties of a low-temperature fabricated Ge-based top-gate MOSFET structure with epitaxial ferromagnetic Heusler-alloy Schottky-tunnel source and drain2023
- Author(s)
  Yamamoto Keisuke、Matsuo Takuro、Yamada Michihiro、Wagatsuma Youya、Sawano Kentaro、Hamaya Kohei
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 167 Pages: 107763-107763
- DOI
  10.1016/j.mssp.2023.107763
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H05616
[Journal Article] Schottky Barrier Height Control at Metal/Ge Interface by Insertion of Nitrogen Contained Amorphous Layer2021
- Author(s)
  Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
- Journal Title
  
  ECS transactions
  
  Volume: -
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K15028
[Journal Article] (Invited) Schottky Barrier Height Control at Metal/Ge Interface by Insertion of Nitrogen Contained Amorphous Layer2021
- Author(s)
  Yamamoto Keisuke、Wang Dong、Nakashima Hiroshi
- Journal Title
  
  ECS Transactions
  
  Volume: 102 Issue: 4 Pages: 63-71
- DOI
  10.1149/10204.0063ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H05616
[Journal Article] (Invited) Fabrication of Ge-on-Insulator By Epitaxial Growth and Ion-Implanted Exfoliation for Electronics and Optoelectronics Applications2021
- Author(s)
  Yamamoto Keisuke、Wang Dong、Nakashima Hiroshi
- Journal Title
  
  ECS Transactions
  
  Volume: 104 Issue: 4 Pages: 157-166
- DOI
  10.1149/10404.0157ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H05616
[Journal Article] Border-Trap Characterization for Ge Gate Stacks with Thin GeOX layer Using Deep-Level Transient Spectroscopy2020
- Author(s)
  Hiroshi Nakashima, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang
- Journal Title
  
  ECS transactions
  
  Volume: 98 Pages: 395-404
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K15028
[Journal Article] (Invited) Border-Trap Characterization for Ge Gate Stacks with Thin GeOx layer Using Deep-Level Transient Spectroscopy2020
- Author(s)
  Nakashima Hiroshi、Wen Wei-Chen、Yamamoto Keisuke、Wang Dong
- Journal Title
  
  ECS Transactions
  
  Volume: 98 Issue: 5 Pages: 395-404
- DOI
  10.1149/09805.0395ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H05616
[Journal Article] Interface trap and border trap characterization for Al2O3/GeOx/Ge gate stacks and influence of these traps on mobility of Ge p-MOSFET2020
- Author(s)
  Wei-Chen Wen, Yuta Nagatomi, Hiroshi Akamine, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
- Journal Title
  
  AIP Advances
  
  Volume: 10 Issue: 6 Pages: 065119-065119
- DOI
  10.1063/5.0002100
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K15028, KAKENHI-PROJECT-19H05616
[Journal Article] High interfacial quality metal-oxide-semiconductor capacitor on (111) oriented 3C-SiC with Al2O3 interlayer and its internal charge analysis2020
- Author(s)
  Oka Ryusei、Yamamoto Keisuke、Akamine Hiroshi、Wang Dong、Nakashima Hiroshi、Hishiki Shigeomi、Kawamura Keisuke
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: SG Pages: SGGD17-SGGD17
- DOI
  10.35848/1347-4065/ab6862
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18KK0134, KAKENHI-PROJECT-17H03237
[Journal Article] Conduction Type Control of Ge-on-Insulator: Combination of Smart-Cut(TM) and Defect Elimination2019
- Author(s)
  Keisuke Yamamoto, Kohei Nakae, Hiroshi Akamine, Dong Wang, Hiroshi Nakashima, Md. M Alam, Kentarou Sawano, Zhongying Xue, Miao Zhang, Zengfeng Di
- Journal Title
  
  ECS transactions
  
  Volume: 93 Issue: 1 Pages: 73-77
- DOI
  10.1149/09301.0073ecst
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K15028, KAKENHI-PROJECT-19H05616, KAKENHI-PROJECT-17H03237
[Journal Article] Border-Trap Characterization for Ge Gate Stacks Using Deep-Level Transient Spectroscopy2019
- Author(s)
  Hiroshi Nakashima, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang
- Journal Title
  
  ECS transactions
  
  Volume: 92 Issue: 4 Pages: 3-10
- DOI
  10.1149/09204.0003ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K15028, KAKENHI-PROJECT-19H05616, KAKENHI-PROJECT-17H03237
[Journal Article] Achievement of low parasitic resistance in Ge n-channel metal-oxide-semiconductor field-effect transistor using embedded TiN-source/drain structure2017
- Author(s)
  Y. Nagatomi, T. Tateyama, S. Tanaka, K. Yamamoto, D. Wang, and H. Nakashima
- Journal Title
  
  Semiconductor Science and Technology
  
  Volume: 32 Issue: 3 Pages: 035001-035001
- DOI
  10.1088/1361-6641/32/3/035001
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26289090
[Journal Article] Direct band gap light emission and detection at room temperature in bulk germanium　diodes with HfGe/Ge/TiN structure2016
- Author(s)
  D. Wang, T. Maekura, K. Yamamoto, and H. Nakashima
- Journal Title
  
  Thin Solid Films
  
  Volume: 602 Pages: 43-47
- DOI
  10.1016/j.tsf.2015.09.074
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-26289090
[Journal Article] Electrical properties of epitaxial Lu- or Y-doped La2O3/La2O3/Ge high-k gate-stacks2016
- Author(s)
  T. Kanashima, R. Yamashiro, M. Zenitaka, K. Yamamoto, D. Wang, J. Tadano, S. Yamada, H. Nohira, H. Nakashima, and K. Hamaya
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: - Pages: 260-264
- DOI
  10.1016/j.mssp.2016.11.016
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26289090, KAKENHI-PROJECT-16H02333
[Journal Article] Mechanism of mobility enhancement in Ge p-channel metal-oxide-semiconductor field-effect transistor due to introduction of Al atoms into SiO2/GeO2 gate stack2016
- Author(s)
  Y. Nagatomi, T. Tateyama, S. Tanaka, W.-C. Wen, T. Sakaguchi, K. Yamamoto, L. Zhao, D. Wang, and H. Nakashima
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: - Pages: 246-253
- DOI
  10.1016/j.mssp.2016.11.014
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26289090
[Journal Article] Effects of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes2016
- Author(s)
  T. Maekura, K. Yamamoto, H. Nakashima, and D. Wang
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55(4S) Issue: 4S Pages: 04EH08-04EH08
- DOI
  10.7567/jjap.55.04eh08
- NAID
  210000146355
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-26289090
[Journal Article] Fabrication of asymmetric Ge Schottky tunneling source n-channel field-effect transistor and its characterization of tunneling conduction2016
- Author(s)
  K. Yamamoto, H. Okamoto, D. Wang, and H. Nakashima
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: - Pages: 283-287
- DOI
  10.1016/j.mssp.2016.09.024
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26289090
[Journal Article] Electrical and structural properties of group-4 transition-metal nitride (TiN, ZrN, and HfN) contacts on Ge2015
- Author(s)
  K. Yamamoto, R. Noguchi, M. Mitsuhara, M. Nishida, T. Hara, D. Wang, and H. Nakashima
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 118(11) Issue: 11
- DOI
  10.1063/1.4930573
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-26289090
[Journal Article] Electrical Properties of Group 4 Metal-Nitride/Ge Contacts and the Application to Ge Optoelectronic Devices2015
- Author(s)
  H. Nakashima, K. Yamamoto, and D. Wang
- Journal Title
  
  The Electrochemical Society Transactions
  
  Volume: 69(10) Issue: 10 Pages: 55-66
- DOI
  10.1149/06910.0055ecst
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-26289090
[Journal Article] Fabrication of PtGe/Ge contacts with high on/off ratio and its application to metal source/drain Ge p-channel MOSFETs2015
- Author(s)
  Y. Nagatomi, S. Tanaka, Y. Nagaoka, K. Yamamoto, D. Wang, and H. Nakashima
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 54(7) Issue: 7 Pages: 070306-070306
- DOI
  10.7567/jjap.54.070306
- NAID
  210000145332
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-26289090
[Journal Article] Investigation of Al-PMA Effect on Al2O3/GeOX/Ge Gate Stack2014
- Author(s)
  Y. Nagatomi, Y. Nagaoka, K. Yamamoto, D. Wang, H. Nakashima
- Journal Title
  
  ECS Transactions
  
  Volume: 64 Issue: 6 Pages: 261-266
- DOI
  10.1149/06406.0261ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25886010, KAKENHI-PROJECT-26289090
[Journal Article] Effect of Kr/O2ECR Plasma Oxidation on Electrical Properties of Al2O3/Ge Gate Stacked Fabricated by ALD2014
- Author(s)
  Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
- Journal Title
  
  Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials (SSDM2014)
  
  Volume: なし Pages: 10-11
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26289090
[Journal Article] Role of an interlayer at a TiN/Ge contact to alleviate the intrinsic Fermi-level pinning position toward the conduction band edge2014
- Author(s)
  K. Yamamoto, M. Mitsuhara, K. Hiidome, R. Noguchi, M. Nishida, D. Wang, and H. Nakashima
- Journal Title
  
  Applied Physics Letters
  
  Volume: 104 Issue: 13 Pages: 288-291
- DOI
  10.1063/1.4870510
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-25886010, KAKENHI-PROJECT-26289090
[Journal Article] Low-temperature fabrication of Y2O3/Ge gate stacks with ultrathin GeOx interlayer and low interface states density characterized by a reliable deep-level transient spectroscopy method2014
- Author(s)
  D. Wang, Y. Nagatomi, S. Kojima, K. Yamamoto, H. Nakashima
- Journal Title
  
  Thin Solid Films
  
  Volume: 557 Pages: 288-291
- DOI
  10.1016/j.tsf.2013.10.065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25886010, KAKENHI-PROJECT-26289090
[Journal Article] Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric fin type metal/germanium/metal structure2014
- Author(s)
  D. Wang, T. Maekura, S. Kamezawa, K. Yamamoto, and H. Nakashima
- Journal Title
  
  Applied Physics Letters
  
  Volume: 106(7) Issue: 7
- DOI
  10.1063/1.4913261
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-25249035, KAKENHI-PROJECT-26289090
[Journal Article] Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge contacts2013
- Author(s)
  H. Nakashima, K. Yamamoto, D. Wang
- Journal Title
  
  ECS Transactions
  
  Volume: 58 Issue: 9 Pages: 167-178
- DOI
  10.1149/05809.0167ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25886010
[Journal Article] Fabrication of Metal-Nitride/Si Contactswith Low Electron Barrier Height2013
- Author(s)
  K. Yamamoto, K. Asakawa, D. Wang, H. Nakashima
- Journal Title
  
  ECS Transactions
  
  Volume: 58 Issue: 9 Pages: 53-59
- DOI
  10.1149/05809.0053ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25886010
[Patent] スピンMOSFET2022
- Inventor(s)
  山本圭介、浜屋宏平
- Industrial Property Rights Holder
  国立大学法人九州大学、国立大学法人大阪大学
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2022-194902
- Filing Date
  2022
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] Measurement of Fowler-Nordheim tunneling barrier height in Ge-MIS structures2023
- Author(s)
  Y. J. Feng, K. Yamamoto, A. Honda, N. Shimizu, D. Wang
- Organizer
  The 8th Asia Applied Physics Conference (2023 年(令和5年度) 応用物理学会九州支部学術講演会)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K03927
[Presentation] Study on the Performance of Metal S/D Ge n-MOSFET with Recessed Channel Structure2023
- Author(s)
  H. Kuwazuru, S. Nasu, D. Wang, K. Yamamoto
- Organizer
  13th International Workshop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] Thermally oxidized Yttrium Oxide on Germanium for n-MOS Capacitor and Field-Effect Transistor2023
- Author(s)
  K. Yamamoto, W.-C. Wen, D. Wang, and H. Nakashima
- Organizer
  244th ECS meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] Low Temperature (~210 °C) Fabrication of Ge MOS Capacitor using Plasma Oxidation and Oxi-Nitridation for the Interlayer Formation2023
- Author(s)
  H. Kuwazuru, D. Wang, K. Yamamoto
- Organizer
  14th International Workshop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] リセスチャネル化によるメタルS/D型Ge n-MOSFETの電流駆動力向上(III)2023
- Author(s)
  鍬釣一、王冬、山本圭介
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] Fabrication of a Ge gate stack using plasma irradiation and low-temperature annealing for Ge applications2023
- Author(s)
  H. Kuwazuru, D. Wang, K. Yamamoto
- Organizer
  14th International Workshop on New Group IV Semiconductor Nanoelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] Fabrication of Ge MOSFET at low temperature (~250℃) for spintronics application2022
- Author(s)
  S. Nasu, T. Matsuo, K. Yamamoto, D. Wang
- Organizer
  The 5th International Union of Materials Research Societies International Conference of Young Researchers on Advanced Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] Novel group IV semiconductor materials and devices for beyond Si technology2022
- Author(s)
  K. Yamamoto
- Organizer
  The 5th International Union of Materials Research Societies International Conference of Young Researchers on Advanced Materials
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] Fabrication and Characterization of Ge n-MOS and n-MOSFET with Thermally Oxidized Yttrium Gate Insulator,2022
- Author(s)
  W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima
- Organizer
  9th International Symposium on Control of Semiconductor Interfaces
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] エッチバック法を用いたGe-on-Insulator作製に向けたウェットエッチング法の検討2021
- Author(s)
  清水昇, 山本圭介, 王冬, 中島寛
- Organizer
  2021年第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K15028
[Presentation] DLTS法によるGeゲートスタック中のトラップ解析2021
- Author(s)
  中島寛, Wei-Chen Wen, 山本圭介, 王冬
- Organizer
  第26回電子デバイス界面テクノロジー研究会
- Invited
- Data Source
  KAKENHI-PROJECT-19K15028
[Presentation] リセスチャネル化によるメタルS/D型Ge n-MOSFETの電流駆動力向上2021
- Author(s)
  松尾拓朗、山本圭介、王冬
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] High Interfacial and Film Qualities of Thermally Oxidized Y2O3 and Sc2O3 MOS Structures on Germanium2021
- Author(s)
  K. Yamamoto, H. Kanakogi, W.-C. Wen, D. Wang, and H. Nakashima
- Organizer
  2020年度東北大学電気通信研究所共同プロジェクト研究発表会
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] GeスピンMOSFET実現に向けた低温（～250℃）デバイスプロセスの構築2021
- Author(s)
  那須新悟、松尾拓朗、山本圭介、王冬
- Organizer
  2021年度応用物理学会九州支部学術講演会
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] エッチバック法を用いたGe-on-Insulator作製に向けたウェットエッチング法の検討2021
- Author(s)
  清水昇，山本圭介，王冬，中島寛
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] GeスピンMOSFETのための低温（～250°C）デバイスプロセスの構築2021
- Author(s)
  松尾拓朗、山本圭介、王冬
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] DLTS法によるGeゲートスタック中のトラップ解析2021
- Author(s)
  中島寛, W.-C. Wen, 山本圭介, 王冬
- Organizer
  第26回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] Low-Temperature Fabrication of Ge MOS Capacitor with Wet Oxidized Yttrium Interlayer2021
- Author(s)
  K. Yamamoto, K. Iseri, D. Wang, H. Nakashima
- Organizer
  2021 International Conference on Solid State Device and Materials (SSDM 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] (Invited) Fabrication of Ge-on-Insulator By Epitaxial Growth and Ion-Implanted Exfoliation for Electronics and Opt-Electronics Applications2021
- Author(s)
  K. Yamamoto, D. Wang, H. Nakashima
- Organizer
  240th ECS meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] (Invited) Schottky Barrier Height Control at Metal/Ge Interface by Insertion of Nitrogen Contained Amorphous Layer2021
- Author(s)
  K. Yamamoto, D. Wang, H. Nakashima
- Organizer
  240th ECS meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] Border-Trap Characterization for Ge Gate Stacks with Thin GeOX layer Using Deep-Level Transient Spectroscopy2020
- Author(s)
  H. Nakashima, W.-C. Wen, K. Yamamoto, and D. Wang
- Organizer
  PRiME 2020
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] Isotropic Wet Etching and Improving Surface Flatness of Ge for Etchback Ge-on-Insulator Fabrication2020
- Author(s)
  Noboru Shimizu, Keisuke Yamamoto, Dong Wang, Hiroshi. Nakashima
- Organizer
  PRiME 2020
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K15028
[Presentation] Isotropic Wet Etching and Improving Surface Flatness of Ge for Etchback Ge-on-Insulator Fabrication2020
- Author(s)
  N. Shimizu, K. Yamamoto, D. Wang, and H. Nakashima
- Organizer
  PRiME 2020
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] Fabrication and characterization of germanium gate stack with thermally oxidized yttrium and scandium dielectrics2020
- Author(s)
  H Kanakogi, W.-C. Wen, K. Yamamoto, D. Wang, and H. Nakashima
- Organizer
  22nd Cross Straits Symposium on Energy and Environmental Science and Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] Thermally Oxidized Yttrium and Scandium Gate Dielectrics on Germanium with High Interfacial and Film Qualities2020
- Author(s)
  H. Kanakogi, W.-C. Wen, K. Yamamoto, D. Wang, and H. Nakashima
- Organizer
  2020 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] Thermally Oxidized Yttrium and Scandium Gate Dielectrics on Germanium with High Interfacial and Film Qualities2020
- Author(s)
  Hiroki Kanakogi, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
- Organizer
  2020 International Conference on Solid State Device and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K15028
[Presentation] Border-Trap Characterization for Ge Gate Stacks with Thin GeOX layer Using Deep-Level Transient Spectroscopy2020
- Author(s)
  Hiroshi Nakashima, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang
- Organizer
  PRiME 2020
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K15028
[Presentation] Formation of Ge mirror plane with high speed wet etching for etchback Ge-on-Insulator fabrication2020
- Author(s)
  N. Shimizu, K. Yamamoto, D. Wang, and H. Nakashima
- Organizer
  22nd Cross Straits Symposium on Energy and Environmental Science and Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] 新規電子デバイス応用に向けたGeゲートスタックの低温(<300°C)形成2019
- Author(s)
  井芹健人、温偉辰、山本圭介、王冬、中島寛
- Organizer
  第80回応用物理学会秋季学術講演会, 北海道大学札幌キャンパス
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] Border-Trap Characterization for Ge Gate Stacks Using Deep-Level Transient Spectroscopy2019
- Author(s)
  H. Nakashima, W.-C. Wen, K. Yamamoto, D. Wang
- Organizer
  236th ECS Meeting, Atlanta, GA, USA
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] Border-Trap Evaluation for SiO2/GeO2/Ge Gate Stacks Using Deep-Level Transient Spectroscopy2019
- Author(s)
  H. Nakashima, W.-C. Wen, K. Yamamoto, D. Wang
- Organizer
  8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8), 東北大学片平キャンパス
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] Ge-on-Insulator基板上へのMOSデバイスの作製と評価2019
- Author(s)
  清水昇、山本圭介、王冬、中島寛
- Organizer
  2019年度応用物理学会九州支部学術講演会、熊本大学黒髪南地区
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] 新規電子デバイス応用に向けたGeゲートスタックの低温(<300°C)形成2019
- Author(s)
  井芹健人, 温偉辰, 山本圭介, 王冬, 中島寛
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K15028
[Presentation] Low temperature (<300oC Fabrication of Ge MOS Structure for Advanced Electronic Devices2019
- Author(s)
  Kento Iseri, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
- Organizer
  2019 International Conference on Solid State Device and Materials (SSDM 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K15028
[Presentation] Study on Position of Border Traps in Al2O3/GeOx/p-Ge Gate Stacks Using Deep-Level Transient Spectroscopy2019
- Author(s)
  W.-C. Wen, K. Yamamoto, D. Wang H. Nakashima
- Organizer
  8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8), 東北大学片平キャンパス
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] Evaluation of Border Traps in Al2O3/GeOx/p-Ge Stacks Using Deep-Level Transient Spectroscopy2019
- Author(s)
  Wei-Chen Wen, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
- Organizer
  2019年第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K15028
[Presentation] Border Trap Evaluation for Al2O3/GeOX/p-Ge Gate Stacks using Deep-Level Transient Spectroscopy2019
- Author(s)
  W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima
- Organizer
  ISTDM / ICSI 2019 Conference, Madison, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] Conduction Type Control of Ge-on-Insulator: Combination of Smart-Cut and Defect Elimination2019
- Author(s)
  Keisuke Yamamoto, Kohei Nakae, Hiroshi Akamine, Dong Wang, Hiroshi Nakashima, Md. M Alam, Kentarou Sawano, Zhongying Xue, Miao Zhang, Zengfeng Di
- Organizer
  2nd Joint ISTDM / ICSI 2019 Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K15028
[Presentation] Border-Trap Evaluation for SiO2/GeO2/Ge Gate Stacks Using Deep-Level Transient Spectroscopy2019
- Author(s)
  Hiroshi Nakashima, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang
- Organizer
  8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K15028
[Presentation] Border-Trap Characterization for Ge Gate Stacks Using Deep-Level Transient Spectroscopy2019
- Author(s)
  Hiroshi Nakashima, Wei-Chen Wen, Keisuke Yamamoto, Dong Wang
- Organizer
  236th ECS meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K15028
[Presentation] Study on Position of Border Traps in Al2O3/GeOx/p-Ge Gate Stacks Using Deep-Level Transient Spectroscopy2019
- Author(s)
  Wei-Chen Wen, Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang
- Organizer
  8th International Symposium on Control of Semiconductor Interfaces (ISCSI-VIII)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K15028
[Presentation] Evaluation of Border Traps in Al2O3/GeOx/p-Ge Stacks Using Deep-Level Transient Spectroscopy2019
- Author(s)
  W.-C. Wen、K. Yamamoto、D. Wang、H. Nakashima
- Organizer
  第80回応用物理学会秋季学術講演会, 北海道大学札幌キャンパス
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] Border Trap Evaluation for Al2O3/GeOX/p-Ge Gate Stacks using Deep-Level Transient Spectroscopy2019
- Author(s)
  Wei-Chen Wen, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
- Organizer
  2nd Joint ISTDM / ICSI 2019 Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K15028
[Presentation] Low temperature (<300°C) Fabrication of Ge MOS Structure for Advanced Electronic Devices2019
- Author(s)
  K. Iseri, W.-C. Wen, K. Yamamoto, D. Wang, H. Nakashima
- Organizer
  2019 International Conference on Solid State Device and Materials (SSDM 2019)、名古屋大学東山キャンパス
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] Ge-on-Insulator基板上へのMOSデバイスの作製と評価2019
- Author(s)
  清水昇, 山本圭介, 王冬, 中島寛
- Organizer
  2019年（令和元年度）応用物理学会九州支部学術講演会
- Data Source
  KAKENHI-PROJECT-19K15028
[Presentation] Conduction Type Control of Ge-on-Insulator: Combination of Smart-Cut and Defect Elimination2019
- Author(s)
  K. Yamamoto, K. Nakae, H. Akamine, D. Wang, H. Nakashima, Md. M Alam, K. Sawano, Z. Xue, M. Zhang, Z. Di
- Organizer
  2nd Joint ISTDM / ICSI 2019 Conference, Madison, WI, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H05616
[Presentation] 非晶質Zr-Ge-N層上への金属堆積による低抵抗Geコンタクトの形成2017
- Author(s)
  岡本隼人、山本圭介、王冬、中島寛
- Organizer
  2017年第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-17
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer2017
- Author(s)
  K. Yamamoto, H. Okamoto, D. Wang, and H. Nakashima
- Organizer
  10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
- Place of Presentation
  Tohoku University, Sendai, Japan
- Year and Date
  2017-02-13
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Effect of n-type doping level on direct band gap light emission intensity for asymmetric metal/Ge/metal diodes2017
- Author(s)
  T. Maekura, C. Motoyama, K. Tanaka, K. Yamamoto, H. Nakashima, and D. Wang
- Organizer
  10th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
- Place of Presentation
  Tohoku University, Sendai, Japan
- Year and Date
  2017-02-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Sbドーピング基板を用いた非対称-金属/Ge/金属構造光素子の作製・特性評価2017
- Author(s)
  前蔵貴行、本山千里、田中健太郎、山本圭介、中島寛、王冬
- Organizer
  2017年第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-16
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] ゲートスタック中へのAl 導入によるGe p-MOSFET の移動度向上機構2017
- Author(s)
  永冨雄太、織田知輝、坂口大成、山本圭介、王冬、中島寛
- Organizer
  2017年第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-16
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] 非晶質Zr-Ge-N層上への金属堆積による低抵抗Geコンタクトの形成2016
- Author(s)
  岡本隼人、山本圭介、王冬、中島寛
- Organizer
  2016年秋季第77回応用物理学会学術講演会
- Place of Presentation
  朱鷺メッセ：新潟コンベンションセンター
- Year and Date
  2016-09-16
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Achievement of low parasitic resistance in Ge n-MOSFET with embedded TiN-source/drain structure2016
- Author(s)
  T. Tateyama, Y. Nagatomi, S. Tanaka, K. Yamamoto, D. Wang, H. Nakashima
- Organizer
  平成28(2016)年度応用物理学会九州支部学術講演会
- Place of Presentation
  長崎県対馬市　対馬市交流センター
- Year and Date
  2016-12-03
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] 金属/Ge接合及びn+/Ge接合を用いたGeトンネルFETの作製と評価2016
- Author(s)
  山本圭介、岡本隼人、王冬、中島寛
- Organizer
  2016年第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学　大岡山キャンパス
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Influences of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes2016
- Author(s)
  Takayuki Maekura, Chisato Motoyama, Keisuke Yamamoto, Hiroshi Nakashima, Dong Wang
- Organizer
  9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
- Place of Presentation
  Tohoku University
- Year and Date
  2016-01-12
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Al/SiO2/GeO2/Geゲートスタックに於ける界面ダイポールの生成と消失2016
- Author(s)
  永冨雄太、建山知輝、坂口大成、山本圭介、王冬、中島寛
- Organizer
  2016年秋季第77回応用物理学会学術講演会
- Place of Presentation
  朱鷺メッセ：新潟コンベンションセンター
- Year and Date
  2016-09-15
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] メタルS/D型Ge n-MOSFETの寄生抵抗低減2016
- Author(s)
  建山知輝、永冨雄太、田中慎太郎、山本圭介、王冬、中島寛
- Organizer
  2016年第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学　大岡山キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Mechanism of mobility enhancement in Ge p-MOSFET due to introduction of Al atoms in SiO2/GeO2 gate stacks2016
- Author(s)
  Yuta Nagatomi, Shintaro Tanaka, Tomoki Tateyama, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
- Organizer
  9th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
- Place of Presentation
  Tohoku University
- Year and Date
  2016-01-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Ge 光素子における基板キャリア密度と伝導型が及ぼす発光特性への影響2016
- Author(s)
  田中健太郎, 前蔵貴行, 本山千里, 王冬, 山本圭介, 中島寛
- Organizer
  平成28(2016)年度応用物理学会九州支部学術講演会
- Place of Presentation
  長崎県対馬市　対馬市交流センター
- Year and Date
  2016-12-04
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] ゲートスタック中へのAl 導入によるp-MOSFET の移動度向上機構2016
- Author(s)
  坂口大成, 建山知輝, 永冨雄太, 山本圭介, 王冬, 中島寛
- Organizer
  平成28(2016)年度応用物理学会九州支部学術講演会
- Place of Presentation
  長崎県対馬市　対馬市交流センター
- Year and Date
  2016-12-03
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer2016
- Author(s)
  H. Okamoto, K. Yamamoto, D. Wang, and H. Nakashima
- Organizer
  2016 International Conference on Solid State Devices and Materiaals (SSDM2016)
- Place of Presentation
  Tsukuba International Congress Center, Tsukuba, Japan
- Year and Date
  2016-09-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] TOF-SIMS and XPS analyses for investigation of Al post-metallization annealing effect for Ge MOS capacitors with SiO2/GeO2 bilayer passivation2016
- Author(s)
  W.-C. Wen, Y. Nagatomi, L. Zhao, K. Yamamoto, D. Wang, H. Nakashima
- Organizer
  平成28(2016)年度応用物理学会九州支部学術講演会
- Place of Presentation
  長崎県対馬市　対馬市交流センター
- Year and Date
  2016-12-03
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Electrical Properties of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer2016
- Author(s)
  H. Nakashima, H. Okamoto, K. Yamamoto, and D. Wang
- Organizer
  JSPS Core-to Core Program "Atomically Controlled Processsing for Ultralarge Scale Integration"
- Place of Presentation
  Forschungszentrum Jülich, Germany
- Year and Date
  2016-11-24
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Mobility enhancement in Ge p-MOSFET due to introduction of Al atoms in SiO2/GeO2gate stacks2016
- Author(s)
  Y. Nagatomi, S. Tanaka, T. Tateyama, K. Yamamoto, D. Wang, and H. Nakashima
- Organizer
  7th Int. Symp. on Control of Semiconductor Interfaces and Int. SiGe Technology and Device Meeting 2016
- Place of Presentation
  Noyori Conference Hall, Nagoya University, Chikusa-ku, Nagoya, Japan
- Year and Date
  2016-06-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Characterization of Ge Tunnel FET with Metal/Ge Junction2016
- Author(s)
  K. Yamamoto, H. Okamoto, D. Wang, and H. Nakashima
- Organizer
  7th Int. Symp. on Control of Semiconductor Interfaces and Int. SiGe Technology and Device Meeting 2016
- Place of Presentation
  Noyori Conference Hall, Nagoya University, Chikusa-ku, Nagoya, Japan
- Year and Date
  2016-06-09
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] 反応性スパッタリングで形成したZrN 物性とGe とのコンタクト特性2016
- Author(s)
  板屋航, 岡本隼人, 山本圭介, 王冬, 中島寛
- Organizer
  平成28(2016)年度応用物理学会九州支部学術講演会
- Place of Presentation
  長崎県対馬市　対馬市交流センター
- Year and Date
  2016-12-03
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Influence of Al-PMA for fin type asymmetric metal/germanium/metal diodes2016
- Author(s)
  C. Motoyama, T. Maekura, K. Tanaka, D. Wang, K. Yamamoto, H. Nakashima
- Organizer
  平成28(2016)年度応用物理学会九州支部学術講演会
- Place of Presentation
  長崎県対馬市　対馬市交流センター
- Year and Date
  2016-12-03
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] ゲートスタック中へのAl導入によるGe p-MOSFETの正孔移動度向上2016
- Author(s)
  永冨雄太、田中慎太郎、建山知輝、山本圭介、王冬、中島寛
- Organizer
  2016年第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学　大岡山キャンパス
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Electrical properties of metal-nitride/Ge contacts and the application to Ge optoelectronic devices2015
- Author(s)
  Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang
- Organizer
  The 2nd International Conference & Exhibition for Nanopia
- Place of Presentation
  Changwon Exhibition Convention Center, Gyeongsangnam-do, Korea
- Year and Date
  2015-11-12
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] PtGe-Source/Drain Ge p-MOSFET with High On/Off Ratio and Low Parasitic Resistance2015
- Author(s)
  Shintaro Tanaka, Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
- Organizer
  2015 International Conference on Solid State Devices and Materiaals (SSDM2015)
- Place of Presentation
  Sapporo Convention Center, Japan
- Year and Date
  2015-09-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Direct-bandgap light emission and detection at room temperature in bulk-Ge diodes with HfGe/Ge/TiN structure2015
- Author(s)
  Dong Wang, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima
- Organizer
  9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)
- Place of Presentation
  The University of Montreal, Quebec, Canada
- Year and Date
  2015-05-20
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] 非対称-金属/Ge/金属構造を有する光素子の試作と特性評価2015
- Author(s)
  前蔵貴行, 山本圭介, 王冬, 中島寛
- Organizer
  2015年第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-11
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Influences of Metal/Ge Contact and Surface Passivation on Light Emission and Detection for Asymmetric Metal/Ge/Metal Diodes2015
- Author(s)
  Takayuki Maekura, Dong Wang, Keisuke Yamamoto, Hiroshi Nakashima
- Organizer
  2015 International Conference on Solid State Devices and Materiaals (SSDM2015)
- Place of Presentation
  Sapporo Convention Center, Japan
- Year and Date
  2015-09-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Effect of Al Post Metallization Annealing on Al2O3/GeO2/Ge Gate Stack2015
- Author(s)
  Yuta Nagatomi, Yuichi Nagaoka, Shintaro Tanaka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
- Organizer
  8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
- Place of Presentation
  Tohoku University
- Year and Date
  2015-01-30
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Electrical characterization of SiGe-on-insulator fabricated using Ge condensation by dry oxidation2015
- Author(s)
  Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang
- Organizer
  American Vacuum Society (AVS) Shanghai Thin Film Conference
- Place of Presentation
  Fuxuan Hotel, Shanghai, China
- Year and Date
  2015-10-24
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Electrical Properties of Group 4 Metal-Nitride/Ge Contacts and the Application to Ge Optoelectronic Devices2015
- Author(s)
  Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang
- Organizer
  228th ECS Meeting
- Place of Presentation
  Phoenix, AZ, USA
- Year and Date
  2015-10-12
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Contact Formation for Metal Source/Drain Ge-CMOS2015
- Author(s)
  Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang, Masatoshi Mitsuhara, Ryutaro Noguchi, Keisuke Hiidome, Minoru Nishida
- Organizer
  9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)
- Place of Presentation
  The University of Montreal, Quebec, Canada
- Year and Date
  2015-05-19
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Electrical Properties of Metal/Ge Contacts with Nitrogen-Contained Amorphous Interlayers2015
- Author(s)
  Keisuke Yamamoto, Ryutaro Noguchi, Masatoshi Mitsuhara, Minoru Nishida, Toru Hara, Dong Wang, Hiroshi Nakashima
- Organizer
  8th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to Core Program Joint Seminar
- Place of Presentation
  Tohoku University
- Year and Date
  2015-01-29
- Invited
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] ALDとECRプラズマ酸化による酸化膜固定電荷密度の制御2015
- Author(s)
  永冨雄太, 長岡裕一, 田中慎太郎, 山本圭介, 王冬, 中島寛
- Organizer
  2015年第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-14
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Barrier Height Modulation for Metal/Ge Contacts with Nitrogen-Contained Amorphous Interlayers2015
- Author(s)
  Keisuke Yamamoto, Ryutaro Noguchi, Masatoshi Mitsuhara, Minoru Nishida, Toru Hara, Dong Wang, Hiroshi Nakashima
- Organizer
  9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9)
- Place of Presentation
  The University of Montreal, Quebec, Canada
- Year and Date
  2015-05-19
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Direct band gap light emission and detection in lateral HfGe/Ge/TiN diodes2015
- Author(s)
  Dong Wang, Takayuki Maekura, Keisuke Yamamoto, Hiroshi Nakashima
- Organizer
  American Vacuum Society (AVS) Shanghai Thin Film Conference
- Place of Presentation
  Fuxuan Hotel, Shanghai, China
- Year and Date
  2015-10-24
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] 低い正孔障壁を有するPtGe/Geコンタクトの作製とメタルS/D型Ge p-MOSFETへの適用2015
- Author(s)
  永冨雄太, 田中慎太郎, 長岡裕一, 山本圭介, 王冬, 中島寛
- Organizer
  シリコン材料・デバイス研究会
- Place of Presentation
  名古屋大学
- Year and Date
  2015-06-19
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] TiN/Geコンタクトにおける低電子障壁発現機構の解明（II）2014
- Author(s)
  山本圭介, 光原昌寿, 吹留佳祐, 野口竜太郎, 西田稔, 王冬, 中島寛
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学(神奈川県相模原市)
- Data Source
  KAKENHI-PROJECT-25886010
[Presentation] Contact properties of group IV metal-nitrides(TiN, ZrN, HfN) on Ge2014
- Author(s)
  Hiroshi Nakashima, Keisuke Yamamoto, Dong Wang, Masatoshi Mitsuhara, Ryutaro Noguchi, Keisuke Hiidome, Minoru Nishida
- Organizer
  JSPS Core-to-Core Program,“Atomically Controlled Processsing for Ultralarge Scale Integration”
- Place of Presentation
  Leuven, Belgium
- Year and Date
  2014-11-03
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Al2O3/GeOx/GeゲートスタックにおけるAl-PMA効果の調査2014
- Author(s)
  永冨雄太, 長岡裕一, 山本圭介, 王冬, 中島寛
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会
- Place of Presentation
  名古屋大学(愛知県名古屋市)
- Year and Date
  2014-06-20
- Data Source
  KAKENHI-PROJECT-25886010
[Presentation] Fabrication of Metal-Nitride/Ge Contacts with Extremely Low Electron Barrier Height and Its Clarification of the Physical Origin2014
- Author(s)
  K. Yamamoto, D. Wang, H. Nakashima
- Organizer
  7th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  東北大学(宮城県仙台市)
- Data Source
  KAKENHI-PROJECT-25886010
[Presentation] Fermi Level Pinning Alleviation at the TiN, ZrN, and HfN/Ge Interfaces2014
- Author(s)
  Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
- Organizer
  7th International Silicon-Germanium Technology and Device Meeting
- Place of Presentation
  Singapore
- Year and Date
  2014-06-03
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] ALDにより形成したAl2O3/Geゲートスタックに於けるKr/O2ECRプラズマ酸化効果2014
- Author(s)
  長岡裕一, 永冨雄太, 山本圭介, 王冬, 中島寛
- Organizer
  2014年秋季第75回応用物理学会学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-20
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Al2O3/GeOx/Geゲートスタックに於けるAl-PMA効果の調査2014
- Author(s)
  永冨雄太, 長岡裕一, 山本圭介, 王冬, 中島寛
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会 (応用物理学会, シリコンテクノロジー分科会との合同開催)
- Place of Presentation
  名古屋大学
- Year and Date
  2014-06-19
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] 非対称-金属/Ge/金属素子の試作とその発光特性2014
- Author(s)
  亀沢翔, 花田尊徳, 山本圭介, 王冬, 中島寛
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学(神奈川県相模原市)
- Data Source
  KAKENHI-PROJECT-25886010
[Presentation] Al2O3/Ge形成後のプラズマ酸化によるゲートスタックの低温形成2014
- Author(s)
  永冨雄太, 長岡裕一, 山本圭介, 王冬, 中島寛
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学(神奈川県相模原市)
- Data Source
  KAKENHI-PROJECT-25886010
[Presentation] Investigation of Al-PMA Effect on Al2O3/GeOX/Ge Gate Stack2014
- Author(s)
  Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
- Organizer
  226th ECS Meeting
- Place of Presentation
  Cancun, Mexico
- Year and Date
  2014-10-07
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] 非晶質Ge界面層とNによるGeコンタクトの外因性準位とSファクターの変調2014
- Author(s)
  山本圭介, 王冬, 中島寛
- Organizer
  2014年秋季第75回応用物理学会学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-20
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Fabrication of MOS and Light Emitting Devices Using Contacts with Low Electron and Hole Barrier Heights2014
- Author(s)
  H. Nakashima, K. Yamamoto, D. Wang
- Organizer
  7th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  東北大学(宮城県仙台市)
- Invited
- Data Source
  KAKENHI-PROJECT-25886010
[Presentation] n形3C-SiCへのゲートスタックの低温形成2014
- Author(s)
  山本裕介, 村山亮介, 山本圭介, 王冬, 中島寛, 菱木繁臣, 川村啓介
- Organizer
  2014年秋季第75回応用物理学会学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-17
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Effect of Kr/O2ECR Plasma Oxidation on Electrical Properties of Al2O3/Ge Gate Stacked Fabricated by ALD2014
- Author(s)
  Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima
- Organizer
  2014 International Conference on Solid State Devices and Materials (SSDM2014)
- Place of Presentation
  Tsukuba International Congress Center
- Year and Date
  2014-09-10
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Direct band gap electroluminescence from bulk germanium at room temperature using an asymmetric metal/germanium/metal structure2014
- Author(s)
  Dong Wang, Sho Kamezawa, Keisuke Yamamoto, Hiroshi Nakashima
- Organizer
  7th International Silicon-Germanium Technology and Device Meeting
- Place of Presentation
  Singapore
- Year and Date
  2014-06-03
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] バルクGe発光素子のデバイス構造による発光効率の変化2014
- Author(s)
  前蔵貴行, 山本圭介, 王冬, 中島寛
- Organizer
  2014年応用物理学会九州支部学術講演会
- Place of Presentation
  大分大学
- Year and Date
  2014-12-07
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] 原子層堆積法により形成したAl2O3/GeゲートスタックにおけるAl堆積後熱処理の有効性2014
- Author(s)
  田中慎太郎, 長岡裕一, 永冨雄太, 山本圭介, 王冬, 中島寛
- Organizer
  2014年応用物理学会九州支部学術講演会
- Place of Presentation
  大分大学
- Year and Date
  2014-12-06
- Data Source
  KAKENHI-PROJECT-26289090
[Presentation] Development of Metal Source/Drain Ge-CMOS Using TiN/Ge and HfGe/Ge contacts2013
- Author(s)
  H. Nakashima, K. Yamamoto, D. Wang
- Organizer
  224th ECS Meeting
- Place of Presentation
  アメリカ・サンフランシスコ
- Invited
- Data Source
  KAKENHI-PROJECT-25886010
[Presentation] Fabrication of Metal-Nitride/Si Contactswith Low Electron Barrier Height2013
- Author(s)
  K. Yamamoto, K. Asakawa, D. Wang, H. Nakashima
- Organizer
  224th ECS Meeting
- Place of Presentation
  アメリカ・サンフランシスコ
- Data Source
  KAKENHI-PROJECT-25886010
[Presentation] Contact properties of group IV metal-nitrides (TiN, ZrN, HfN) on Ge
- Author(s)
  H. Nakashima, K. Yamamoto, D. Wang, M. Mitsuhara, R. Noguchi, K. Hiidome, N. Nishida
- Organizer
  JSPS Core-to-Core Program Workshop "Atomically Controlled Processing for Ultralarge Scale Integration
- Place of Presentation
  ベルギー・ルーヴェン
- Year and Date
  2014-11-13 – 2014-11-14
- Invited
- Data Source
  KAKENHI-PROJECT-25886010
[Presentation] ZrN, HfN/Geコンタクトの電気特性と界面微細構造解析
- Author(s)
  野口竜太郎，光原昌寿，山本圭介，西田稔，中島寛，原徹
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学(北海道札幌市)
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25886010
[Presentation] ALDにより形成したAl2O3/Geゲートスタックに於けるKr/O2 ECRプラズマ酸化効果
- Author(s)
  長岡裕一，永冨雄太，山本圭介，王冬，中島寛
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学(北海道札幌市)
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25886010
[Presentation] Effect of Kr/O2 mixed ECR plasma oxidation on electrical　properties of Al2O3/Ge gate stacks fabricated by ALD
- Author(s)
  Y. Nagatomi, Y. Nagaoka, K. Yamamoto, D. Wang, H. Nakashima
- Organizer
  2014 International Conference on Solid State Device and Materials (SSDM 2014)
- Place of Presentation
  つくば国際会議場(茨城県つくば市)
- Year and Date
  2014-09-08 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-25886010
[Presentation] ALDとECRプラズマ酸化による酸化膜固定電荷密度の制御
- Author(s)
  永冨雄太, 長岡裕一, 田中慎太郎, 山本圭介, 王冬, 中島寛
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス(神奈川県平塚市)
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25886010
[Presentation] Effect of Al post metallization annealing on Al2O3/GeOx/Ge gate stacks
- Author(s)
  Y. Nagatomi, Y. Nagaoka, S. Tanaka, K. Yamamoto, D. Wang, H. Nakashima
- Organizer
  8th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  東北大学(宮城県仙台市)
- Year and Date
  2015-01-29 – 2015-01-30
- Data Source
  KAKENHI-PROJECT-25886010
[Presentation] 非晶質Ge界面層とNによるGeコンタクトの外因性準位とSファクターの変調
- Author(s)
  山本圭介，王冬，中島寛
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学(北海道札幌市)
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25886010
[Presentation] n-ウェルの形成のためのGe基板上へのSb拡散
- Author(s)
  米田亮太, 山本圭介, 中島寛
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス(神奈川県平塚市)
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25886010
[Presentation] Electrical Properties of Metal/Ge contacts with Nitrogen-Contained Amorphous Interlayers
- Author(s)
  K. Yamamoto, R. Noguchi, M. Mitsuhara, M. Nishida, T. Hara, D. Wang, H. Nakashima
- Organizer
  8th International WorkShop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  東北大学(宮城県仙台市)
- Year and Date
  2015-01-29 – 2015-01-30
- Invited
- Data Source
  KAKENHI-PROJECT-25886010
[Presentation] Fermi level pinning alleviation at the TiN, ZrN, and HfN/Ge interfaces
- Author(s)
  K. Yamamoto, D. Wang, H. Nakashima
- Organizer
  7th International Silicon-Germanium Technology and Device Meeting (ISTDM 2014)
- Place of Presentation
  シンガポール
- Year and Date
  2014-06-02 – 2014-06-04
- Data Source
  KAKENHI-PROJECT-25886010
[Presentation] Investigation of Al-PMA Effect on Al2O3/GeOX/Ge Gate Stack
- Author(s)
  Y. Nagatomi, Y. Nagaoka, K. Yamamoto, D. Wang, H. Nakashima
- Organizer
  226th ECS Meeting
- Place of Presentation
  メキシコ・カンクン
- Year and Date
  2014-10-05 – 2014-10-10
- Data Source
  KAKENHI-PROJECT-25886010

1. Wang Dong (10419616)

# of Collaborated Projects: 3 results

# of Collaborated Products: 60 results
2. Hamaya Kohei (90401281)

# of Collaborated Projects: 2 results

# of Collaborated Products: 1 results
3. 澤野憲太郎 (90409376)

# of Collaborated Projects: 2 results

# of Collaborated Products: 2 results
4. HAMAMOTO Kiichi (70404027)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. Akamine Hiroshi (40804737)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
6. 中島寛 (70172301)

# of Collaborated Projects: 1 results

# of Collaborated Products: 59 results
7. 村上恭和 (30281992)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 西田稔 (90183540)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
9. MITSUHARA Masatoshi

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results

Yamamoto Keisuke 山本 圭介

YAMAMOTO Keisuke 山本 圭介

Research Projects

Research Products

Co-Researchers

中空ゲルマニウム構造に基づく高性能電子・光デバイス集積化技術の開発Principal Investigator

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Developing Silicon Germanium Optical Spintronics

Principal Investigator

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Ge-On-Insulator基板を利用したMIS型近赤外発光素子の研究開発

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The realization of steep slope tunnel FET on Ge-on-Insulator substratePrincipal Investigator

Principal Investigator

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Review Section

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Development of a germanium spin MOSFET

Principal Investigator

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Electron Microscopy Analysis for Materials Interfaces &#8211;Development and Applications of Multidisciplinary Quantification Techniques for Atomic Structures and Electromagnetic Properties

Principal Investigator

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Review Section

Research Institution

Development of basic technology for Ge-CMOS integratable high-performance Ge optical devices

Principal Investigator

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Application research for high mobility Ge MOSFET by charge compensation at MOS interfacePrincipal Investigator

Principal Investigator

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Research Institution

[Journal Article] Development of Ge Isotropic Wet Etching Solution and its Application to High Quality Ge-on-Insulator Fabrication through the Etchback Method2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Ge-on-insulator fabrication based on Ge-on-nothing technology2024

Author(s)

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DOI

Data Source

[Journal Article] Fabrication and characterization of germanium n-MOS and n-MOSFET with thermally oxidized yttrium gate insulator: Formation of underlying germanium oxide and its electrical characteristics2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Electrical properties of a low-temperature fabricated Ge-based top-gate MOSFET structure with epitaxial ferromagnetic Heusler-alloy Schottky-tunnel source and drain2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Schottky Barrier Height Control at Metal/Ge Interface by Insertion of Nitrogen Contained Amorphous Layer2021

Author(s)

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Data Source

[Journal Article] (Invited) Schottky Barrier Height Control at Metal/Ge Interface by Insertion of Nitrogen Contained Amorphous Layer2021

Author(s)

Journal Title

Yamamoto Keisuke 山本圭介

YAMAMOTO Keisuke 山本圭介

Electron Microscopy Analysis for Materials Interfaces –Development and Applications of Multidisciplinary Quantification Techniques for Atomic Structures and Electromagnetic Properties

[Journal Article] Direct band gap light emission and detection at room temperature in bulk germanium　diodes with HfGe/Ge/TiN structure2016