Kobayashi Takuma 小林拓真

Researcher Number	20827711
Other IDs	https://orcid.org/0000-0002-2755-5079
Affiliation (Current)	2024: 大阪大学, 大学院工学研究科, 准教授
Affiliation (based on the past Project Information) *help	2024: 大阪大学, 大学院工学研究科, 准教授 2022 – 2023: 大阪大学, 大学院工学研究科, 助教 2021: 大阪大学, 工学研究科, 助教
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related / 0302:Electrical and electronic engineering and related fields Except Principal Investigator Broad Section D
Keywords	Principal Investigator MOSFET / 界面欠陥 / キャリア散乱 / 移動度 / GaN / SiO2 / SiC / 信頼性 / 窒化 / パワーデバイス / 電界効果トランジスタ（MOSFET） / 二酸化珪素（SiO2） / 炭化珪素（SiC） … More Except Principal Investigator … More 界面科学 / MOS構造 / パワーデバイス / 炭化珪素 Less

Deep Insights into Heterointerface Engineering in Silicon Carbide based Devices
- Principal Investigator
  
  渡部平司
- Project Period (FY)
  2024 – 2028
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Review Section
  
  Broad Section D
- Research Institution
  Osaka University
窒化ガリウムMOSデバイスにおけるキャリア散乱機構の研究Principal Investigator
- Principal Investigator
  
  小林拓真
- Project Period (FY)
  2023 – 2024
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Osaka University
Elucidation of defects at SiC/SiO2 interfaces by electrical and spectroscopic measurementsPrincipal Investigator
- Principal Investigator
  
  Kobayashi Takuma
- Project Period (FY)
  2021 – 2022
- Research Category
  
  Grant-in-Aid for Research Activity Start-up
- Review Section
  
  0302:Electrical and electronic engineering and related fields
- Research Institution
  Osaka University

All 2022 2021

All Journal Article Presentation

[Journal Article] Impact of nitridation on the reliability of 4H-SiC(11-20) MOS devices2022
- Author(s)
  T. Nakanuma, T. Kobayashi, T. Hosoi, M. Sometani, M. Okamoto, A. Yoshigoe, T. Shimura and H. Watanabe
- Journal Title
  
  Applied Physics Express
  
  Volume: 15 Issue: 4 Pages: 041002-041002
- DOI
  10.35848/1882-0786/ac5ace
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21K18170, KAKENHI-PROJECT-21K20429, KAKENHI-PROJECT-20K05338
[Journal Article] Degradation of NO-nitrided SiC MOS interfaces by excimer ultraviolet light irradiation2022
- Author(s)
  Fujimoto Hiroki、Kobayashi Takuma、Sometani Mitsuru、Okamoto Mitsuo、Shimura Takayoshi、Watanabe Heiji
- Journal Title
  
  Applied Physics Express
  
  Volume: 15 Issue: 10 Pages: 104004-104004
- DOI
  10.35848/1882-0786/ac926c
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] Nitridation-induced degradation of SiC(1-100) MOS devices2022
- Author(s)
  T. Kobayashi, T. Nakanuma, A. Suzuki, M. Sometani, M. Okamoto, A.Yoshigoe, T. Shimura, H. Watanabe
- Organizer
  19th International Conference on Silicon Carbide and Related Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] NO窒化を施した非基底面上SiO2/SiC構造のバンドアライメント評価2022
- Author(s)
  中沼貴澄, 小林拓真, 染谷満, 岡本光央, 吉越章隆, 志村考功, 渡部平司
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] NO 窒化 SiO2/SiC(11-20) 界面へのエキシマ紫外光照射の影響2022
- Author(s)
  藤本博貴, 小林拓真, 染谷満, 岡本光央, 志村考功, 渡部平司
- Organizer
  応用物理学会　先進パワー半導体分科会　第9回講演会
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] NO 窒化 SiC(1-100) MOS デバイスのリーク伝導機構2022
- Author(s)
  鈴木亜沙人, 中沼貴澄, 小林拓真, 染谷満, 岡本光央, 吉越章隆, 志村考功, 渡部平司
- Organizer
  応用物理学会　先進パワー半導体分科会　第9回講演会
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] 紫外光照射によるNO窒化4H-SiC(11-20) MOSデバイスの電気特性劣化2022
- Author(s)
  藤本博貴, 小林拓真, 染谷満, 岡本光央, 志村孝功, 渡部平司
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] Analysis of leakage current mechanisms in NO-nitrided SiC(1-100) MOS devices2022
- Author(s)
  A. Suzuki, T. Nakanuma, T. Kobayashi, M. Sometani, M. Okamoto, A. Yoshigoe, T. Shimura, H. Watanabe
- Organizer
  2022 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] NO窒化SiC MOSデバイスへのエキシマ紫外光照射の影響2022
- Author(s)
  藤本博貴, 小林拓真, 染谷満, 岡本光央, 細井卓治, 志村孝功, 渡部平司
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] Degradation of NO-Nitrided SiC MOS Devices Due to Excimer Ultraviolet Light Illumination2022
- Author(s)
  H. Fujimoto, T. Kobayashi, M. Sometani, M. Okamoto, T. Shimura, H. Watanabe
- Organizer
  19th International Conference on Silicon Carbide and Related Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] Investigation of reliability of NO nitrided SiC(1-100) MOS devices2022
- Author(s)
  Takato Nakanuma, Asato Suzuki, Yu Iwakata, Takuma Kobayashi, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe
- Organizer
  IEEE International Reliability Physics Symposium (IRPS 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] NO窒化処理を施した4H-SiC(11-20) MOSデバイスの絶縁性および閾値安定性の評価2022
- Author(s)
  中沼貴澄, 岩片悠, 小林拓真, 染谷満, 岡本光央, 吉越章隆, 細井卓治, 志村考功, 渡部平司
- Organizer
  電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－（第27回研究会）
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] NO窒化処理を施したSiC(1-100) MOSデバイスのリーク電流特性2022
- Author(s)
  鈴木亜沙人, 小林拓真, 染谷満, 岡本光央, 志村考功, 渡部平司
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] Reliability Issues in Nitrided SiC MOS Devices2022
- Author(s)
  T. Kobayashi, T. Nakanuma, A. Suzuki, M. Sometani, M. Okamoto, A. Yoshigoe, T. Hosoi, T. Shimura, H. Watanabe
- Organizer
  9th International Symposium on Control of Semiconductor Interfaces
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] NO窒化処理を施した非基底面SiC MOSデバイスの信頼性2022
- Author(s)
  中沼貴澄, 小林拓真 ,染谷満, 岡本光央, 吉越章隆, 細井卓治, 志村考功, 渡部平司
- Organizer
  電気学会電子デバイス研究会
- Invited
- Data Source
  KAKENHI-PROJECT-21K20429
[Presentation] エキシマ紫外光照射によるNO窒化SiC MOSデバイスの特性劣化2021
- Author(s)
  藤本博貴, 小林拓真, 染谷満, 岡本光央, 細井卓治, 志村考功, 渡部平司
- Organizer
  応用物理学会先進パワー半導体分科会第8回講演会
- Data Source
  KAKENHI-PROJECT-21K20429

1. 渡部平司 (90379115)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
2. 染谷満 (60783644)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Kobayashi Takuma 小林 拓真

Research Projects

Research Products

Co-Researchers

Deep Insights into Heterointerface Engineering in Silicon Carbide based Devices

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

窒化ガリウムMOSデバイスにおけるキャリア散乱機構の研究Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Elucidation of defects at SiC/SiO2 interfaces by electrical and spectroscopic measurementsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] Impact of nitridation on the reliability of 4H-SiC(11-20) MOS devices2022

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Degradation of NO-nitrided SiC MOS interfaces by excimer ultraviolet light irradiation2022

Author(s)

Journal Title

DOI

Data Source

[Presentation] Nitridation-induced degradation of SiC(1-100) MOS devices2022

Author(s)

Organizer

Data Source

[Presentation] NO窒化を施した非基底面上SiO2/SiC構造のバンドアライメント評価2022

Author(s)

Organizer

Data Source

[Presentation] NO 窒化 SiO2/SiC(11-20) 界面へのエキシマ紫外光照射の影響2022

Author(s)

Organizer

Data Source

[Presentation] NO 窒化 SiC(1-100) MOS デバイスのリーク伝導機構2022

Author(s)

Organizer

Data Source

[Presentation] 紫外光照射によるNO窒化4H-SiC(11-20) MOSデバイスの電気特性劣化2022

Author(s)

Organizer

Data Source

[Presentation] Analysis of leakage current mechanisms in NO-nitrided SiC(1-100) MOS devices2022

Author(s)

Organizer

Data Source

[Presentation] NO窒化SiC MOSデバイスへのエキシマ紫外光照射の影響2022

Author(s)

Organizer

Data Source

[Presentation] Degradation of NO-Nitrided SiC MOS Devices Due to Excimer Ultraviolet Light Illumination2022

Author(s)

Organizer

Data Source

[Presentation] Investigation of reliability of NO nitrided SiC(1-100) MOS devices2022

Author(s)

Organizer

Data Source

[Presentation] NO窒化処理を施した4H-SiC(11-20) MOSデバイスの絶縁性および閾値安定性の評価2022

Author(s)

Organizer

Data Source

[Presentation] NO窒化処理を施したSiC(1-100) MOSデバイスのリーク電流特性2022

Author(s)

Organizer

Data Source

[Presentation] Reliability Issues in Nitrided SiC MOS Devices2022

Author(s)

Organizer

Data Source

Kobayashi Takuma 小林拓真