Maeda Takuya 前田拓也

Researcher Number	20965694
Other IDs	https://orcid.org/0000-0002-2736-5611
Affiliation (Current)	2025: 東京大学, 大学院工学系研究科(工学部), 講師
Affiliation (based on the past Project Information) *help	2023 – 2024: 東京大学, 大学院工学系研究科(工学部), 講師 2022: 東京大学, 大学院工学系研究科(工学部), 助教
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related / 0302:Electrical and electronic engineering and related fields Except Principal Investigator Medium-sized Section 30:Applied physics and engineering and related fields
Keywords	Principal Investigator 高電界効果 / 高周波デバイス / パワーデバイス / 窒化ガリウム / ドリフト速度 / 窒化ガリウム(GaN) / c軸方向移動度 / ワイドギャップ半導体 / 高電界物性 / 高電子移動度トランジスタ(HEMT) / 二次元電子ガス(2DEG) / 高周波トランジスタ … More Except Principal Investigator … More 国際共同研究 / デバイスプロセス / エピタキシャル成長 / 窒化物半導体 / 顕微鏡 / ワイドギャップ半導体 / 誘導ラマン散乱 Less

In situ three-dimensional measurement of wide bandgap semiconductors with stimulated Raman scattering
- Principal Investigator
  
  小関泰之
- Project Period (FY)
  2023 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  The University of Tokyo
Measurement of Electron Drift Velocity in GaN under High Electric FieldPrincipal Investigator
- Principal Investigator
  
  前田拓也
- Project Period (FY)
  2023 – 2024
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  The University of Tokyo
Functional Extension of Nitride Semiconductors by Epitaxial Integration of Novel Materials
- Principal Investigator
  
  小林篤
- Project Period (FY)
  2023 – 2026
- Research Category
  
  Fund for the Promotion of Joint International Research (International Collaborative Research)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Tokyo University of Science
Study on High Field Carrier Transport in Gallium NitridePrincipal Investigator
- Principal Investigator
  
  Maeda Takuya
- Project Period (FY)
  2022 – 2023
- Research Category
  
  Grant-in-Aid for Research Activity Start-up
- Review Section
  
  0302:Electrical and electronic engineering and related fields
- Research Institution
  The University of Tokyo

All 2024 2023

All Journal Article Presentation

[Journal Article] Velocity-Field Characteristics of 2DEG in AlGaN/GaN Precisely Determined by Pulsed I-V Measurements for TLM Structure2024
- Author(s)
  Yusuke Wakamoto, Takahiko Kawahara, Shigeki Yoshida, Kozo Makiyama, Ken Nakata, Yoshiaki Nakano, Takuya Maeda
- Journal Title
  
  Proceedings of the 82nd Device Research Conference (DRC 2024)
  
  Volume: -
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K20423
[Journal Article] Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering2023
- Author(s)
  Atsushi Kobayashi, Yoshio Honda, Takuya Maeda, Tomoya Okuda, Kohei Ueno, Hiroshi Fujioka
- Journal Title
  
  Applied Physics Express
  
  Volume: 17 Issue: 1 Pages: 011002-011002
- DOI
  10.35848/1882-0786/ad120b
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23KK0094, KAKENHI-PROJECT-23K26557
[Presentation] Trasport Properties of GaN under High Electric Field2024
- Author(s)
  T. Maeda
- Organizer
  15th Topical Workshop on Heterostructure Microelectronics (TWHM 2024)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K20423
[Presentation] Velocity-Field Characteristics of 2DEG in AlGaN/GaN Precisely Determined by Pulsed I-V Measurements for TLM Structure2024
- Author(s)
  Y. Wakamoto, T. Kawahara, S. Yoshida, K. Makiyama, K. Nakata, T. Maeda
- Organizer
  The 82nd Device Research Conference (DRC 82)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K20423
[Presentation] AlGaN/GaNヘテロ接合における2次元電子ガスのドリフト速度の測定2024
- Author(s)
  若本裕介, 河原孝彦, 吉田成輝, 牧山剛三, 中田健, 中野義昭, 前田拓也
- Organizer
  第70回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22K20423
[Presentation] ScAlN/GaNとAlGaN/GaNに対する数値計算・解析式による2DEGモデリング2023
- Author(s)
  Y. Wakamoto,A. Kobayashi,Y. Nakano,T. Maeda
- Organizer
  第42回電子材料シンポジウム(EMS-42)
- Data Source
  KAKENHI-PROJECT-23KK0094
[Presentation] GaN基板上にスパッタ成長したScAlN薄膜の構造・光学物性の評価2023
- Author(s)
  T. Maeda,Y. Wakamoto,S. Kaneki,H. Fujikura,A. Kobayashi
- Organizer
  第42回電子材料シンポジウム(EMS-42)
- Data Source
  KAKENHI-PROJECT-23KK0094
[Presentation] Structural Properties of Epitaxial ScAlN Films Grown by Sputtering: Experimental and Machine Learning Approaches2023
- Author(s)
  Atsushi Kobayashi,Yoshio Honda,Takuya Maeda,Kohei Ueno,Hiroshi Fujioka
- Organizer
  14th International Conference on Nitride Semiconductors (ICNS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0094
[Presentation] Characterization of Optical Properties and Bandgaps of Sc<sub>x</sub>Al<sub>1-x</sub>N Epitaxially Grown on GaN Bulk Substrate by Sputtering Method2023
- Author(s)
  Takuya Maeda,Yusuke Wakamoto,Shota Kaneki,Hajime Fujikura,Atsushi Kobayashi
- Organizer
  14th International Conference on Nitride Semiconductors (ICNS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0094
[Presentation] Sputtering Epitaxial Integration of AlN and NbN for Polarity Control and Crystal Phase Manipulation2023
- Author(s)
  Atsushi Kobayashi,Shunya Kihira,Takahito Takeda,Masaki Kobayashi,Takuya Maeda,Takayuki Harada,Toru Akiyama,Takahiro Kawamura,Kohei Ueno,Hiroshi Fujioka
- Organizer
  14th International Conference on Nitride Semiconductors (ICNS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0094
[Presentation] Study on 2DEG Density in ScAlN/GaN and AlGaN/GaN Heterostructures Based on Simulation and Analytical Modeling2023
- Author(s)
  Yusuke Wakamoto,Atsushi Kobayashi,Yoshiaki Nakano,Takuya Maeda
- Organizer
  14th International Conference on Nitride Semiconductors (ICNS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23KK0094

1. 小関泰之 (60437374)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
2. 小林篤 (20470114)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
3. 中野貴之 (00435827)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
4. 本田善央 (60362274)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results

Maeda Takuya 前田 拓也

Research Projects

Research Products

Co-Researchers

In situ three-dimensional measurement of wide bandgap semiconductors with stimulated Raman scattering

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Measurement of Electron Drift Velocity in GaN under High Electric FieldPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Functional Extension of Nitride Semiconductors by Epitaxial Integration of Novel Materials

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Study on High Field Carrier Transport in Gallium NitridePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] Velocity-Field Characteristics of 2DEG in AlGaN/GaN Precisely Determined by Pulsed I-V Measurements for TLM Structure2024

Author(s)

Journal Title

Data Source

[Journal Article] Structural characterization of epitaxial ScAlN films grown on GaN by low-temperature sputtering2023

Author(s)

Journal Title

DOI

Data Source

[Presentation] Trasport Properties of GaN under High Electric Field2024

Author(s)

Organizer

Data Source

[Presentation] Velocity-Field Characteristics of 2DEG in AlGaN/GaN Precisely Determined by Pulsed I-V Measurements for TLM Structure2024

Author(s)

Organizer

Data Source

[Presentation] AlGaN/GaNヘテロ接合における2次元電子ガスのドリフト速度の測定2024

Author(s)

Organizer

Data Source

[Presentation] ScAlN/GaNとAlGaN/GaNに対する数値計算・解析式による2DEGモデリング2023

Author(s)

Organizer

Data Source

[Presentation] GaN基板上にスパッタ成長したScAlN薄膜の構造・光学物性の評価2023

Author(s)

Organizer

Data Source

[Presentation] Structural Properties of Epitaxial ScAlN Films Grown by Sputtering: Experimental and Machine Learning Approaches2023

Author(s)

Organizer

Data Source

[Presentation] Characterization of Optical Properties and Bandgaps of Sc<sub>x</sub>Al<sub>1-x</sub>N Epitaxially Grown on GaN Bulk Substrate by Sputtering Method2023

Author(s)

Organizer

Data Source

[Presentation] Sputtering Epitaxial Integration of AlN and NbN for Polarity Control and Crystal Phase Manipulation2023

Author(s)

Organizer

Data Source

[Presentation] Study on 2DEG Density in ScAlN/GaN and AlGaN/GaN Heterostructures Based on Simulation and Analytical Modeling2023

Author(s)

Organizer

Data Source

Maeda Takuya 前田拓也