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FUKUI Takashi  福井 孝志

ORCIDConnect your ORCID iD *help
Researcher Number 30240641
Other IDs
External Links
Affiliation (based on the past Project Information) *help 2015: 北海道大学, 情報科学研究科, 名誉教授
2014: 北海道大学, 情報科学研究科, 教授
2013: 北海道大学, 情報科学研究科, 特任教授
2011 – 2012: Hokkaido University, 情報科学研究科, 教授
2007 – 2010: Hokkaido University, 大学院・情報科学研究科, 教授 … More
2005 – 2006: 北海道大学, 大学院情報科学研究科, 教授
2005: 北海道大学, 情報科学研究科, 教授
2004 – 2005: 北海道大学, 大学院・情報科学研究科, 教授
2001 – 2003: 北海道大学, 量子集積エレクトロニクス研究センター, 教授
1992 – 2000: 北海道大学, 量子界面エレクトロニクス研究センター, 教授
1996: 北海道大学, 量子界面エレクトロニクス研究センタ, 教授
1996: 量子界面エレクトロニクス研究センター, 教授 Less
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials / Electronic materials/Electric materials / Physics / 電子材料工学 / Microdevices/Nanodevices / Mathematics and Physics / Science and Engineering
Except Principal Investigator
Electronic materials/Electric materials / Electron device/Electronic equipment / 電子デバイス・機器工学 / Electronic materials/Electric materials / 電子材料工学 / Applied optics/Quantum optical engineering
Keywords
Principal Investigator
結晶成長 / 量子ドット / 近藤効果 / 単電子トランジスタ / 選択成長 / 有機金属気相成長 / GaAs / Semiconductor / 半導体 / 化合物半導体 … More / ナノワイヤ / 単電子メモリー / 2分岐決定ダイアグラム / 相補型単電子インバータ / 量子ナノ構造 / Single Electron Circuit / Single Electron Transistor / Quantum Dot Network / Quantum Wire / Quantum Dot / Masked Substrate / Selective Area Growth / MOVPE Growth / クーロンブロッケード / 単電子素子 / 論理回路 / クーロンギャップ / クーロン振動 / 単電子素子・回路 / 単電子回路 / 量子ドットネットワーク / 量子細線 / マスク基板 / MOCVD / Quantum Dots / Crystal Growth / 有機金属気相成長法 / Quantum dot / Cryxtal growth / LED / 半導体ナノワイヤ / 太陽電池 / 発光ダイオード / 単電子輸送 / 半導体物性 / 単電子メモリ / 磁性体 / 1次元物性 / フォトニック結晶 / カゴメ格子 … More
Except Principal Investigator
選択成長 / 有機金属気相成長 / 量子ドット / GaAs / MBE / dynamics of life / self organization / pattern / dissipative structure / nonlinear oscillation / single electron / quantum nano / reaction-diffusion system / 生命ダイナミクス / 自己組織化 / パターン / 散逸構造 / 非線形振動 / 単電子 / 量子ナノ / 反応拡散系 / InGaAs / ナノ構造 / MOCVD / トリメチルガリウム / 原子層エピタキシ / オージェ電子分光 / 化合物半導体 / Photonic Bands / Line defect / Point / Light Extraction Efficiency / Photoluminescence / Photonics Crystal Slabs / Selective Area Growth / MOVPE Growth / Photonics Crystals / whispering gallery mode / 点欠陥共振器 / 線欠陥導波路 / 時間領域差分(FDTD)法 / フォトニックバンド / 線欠陥・点欠陥導入構造 / 光取り出し効率 / フォトルミネセンス / フォトニック結晶スラブ / フォトニック結晶 / トンネル現象 / 反応拡散 / oxynitride film / ECR plasma / ultrathin insulator / hydrogen-terminated surface / Fermi level pinning / interface state / surface state / UHV-based system / contactless C-V / 原子スケール表面制御 / トンネル絶縁膜 / 極薄絶縁膜 / 半導体自由表面 / 非接触C-V / 酸窒化膜 / ECRプラズマ / 極博絶縁膜 / 水素終端シリコン表面 / フェルミ準位ピンニング / 表面プロセス / 表面・界面準位 / 超高真空一貫システム / 非接触・C-V / Quantum wire laser / Nano Sturcture / Nano Fabication / Selective growth / Self-organized growth / Coupled Quantum Dots / Quantum Dot / Single electron devices / 表面修飾 / 再成長 / ドット形成過程 / 表面エネルギー / 表面吸着 / 成長モード / 量子細線レーザー / 微細加工 / 自己形成 / 結合量子ドット / 単電子デバイス / MIS structure / Interface State / Inp / solid state TWA / 磁性薄膜 / ヘテロ界面 / MIS構造 / 界面準位 / InP / 固体進行波素子 / マンガン砒素 / ガリウムインジウム砒素 / インジウム燐 / スピンエレクトロニクス / III-V族化合物半導体 / 強磁性体 / 顕微フォトルミネセンス / ヘテロ構造 / 単一光子光源 / 半導体ナノワイヤ / ワイス振動 / 層状物質 / TEM / 電子波干渉素子 / C_<60> / ルミネセンス / 量子細線 / ファンデァワールス成長 / 水素ラジカル / MOMBE / 反射電子線回折 / 有機金属 Less
  • Research Projects

    (20 results)
  • Research Products

    (297 results)
  • Co-Researchers

    (32 People)
  •  Compound Semiconductor Nanowires and their Optical Device ApplicationsPrincipal Investigator

    • Principal Investigator
      Fukui Takashi
    • Project Period (FY)
      2011 – 2015
    • Research Category
      Grant-in-Aid for Scientific Research (S)
    • Research Field
      Microdevices/Nanodevices
    • Research Institution
      Hokkaido University
  •  化合物半導体ナノワイヤによる高効率太陽電池の研究Principal Investigator

    • Principal Investigator
      福井 孝志
    • Project Period (FY)
      2011
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  Semiconductor Nanowire Electronics by Selective-Area Metal-Organic Vapor Phase EpitaxyPrincipal Investigator

    • Principal Investigator
      FUKUI Takashi
    • Project Period (FY)
      2006 – 2010
    • Research Category
      Grant-in-Aid for Specially Promoted Research
    • Review Section
      Science and Engineering
      Mathematics and Physics
    • Research Institution
      Hokkaido University
  •  有機金属気相選択成長法によるガリウムヒ素単電子メモリの作製と評価Principal Investigator

    • Principal Investigator
      福井 孝志
    • Project Period (FY)
      2006 – 2007
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  半導体ナノワイヤを用いた単一光子光源の研究

    • Principal Investigator
      本久 順一
    • Project Period (FY)
      2005 – 2006
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Applied optics/Quantum optical engineering
    • Research Institution
      Hokkaido University
  •  半導体・強磁性体複合型ナノワイヤを用いた縦型ナノスピントランジスタの研究

    • Principal Investigator
      原 真二郎
    • Project Period (FY)
      2005 – 2006
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  Coupled quantum-dot devices based on the reaction-diffusion dynamics

    • Principal Investigator
      AMEMIYA Yoshihito
    • Project Period (FY)
      2004 – 2005
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Hokkaido University
  •  Fabrication of Photonic Crystals by Selective-Area Metalorganic Vapor Phase Epitaxy and Their Application to Devices

    • Principal Investigator
      MOTOHISA Junichi
    • Project Period (FY)
      2003 – 2005
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  Quantum-dot devices based on the reaction-diffusion information processing architecture

    • Principal Investigator
      AMEMIYA Yoshihito
    • Project Period (FY)
      2002 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Hokkaido University
  •  単一電子入力・単一電子出力型記憶素子の研究Principal Investigator

    • Principal Investigator
      福井 孝志
    • Project Period (FY)
      2001
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hokkaido University
  •  有機金属気相成長高密度量子ナノ構造による単電子集積エレクトロニクスPrincipal Investigator

    • Principal Investigator
      福井 孝志
    • Project Period (FY)
      2001 – 2005
    • Research Category
      Grant-in-Aid for Creative Scientific Research
    • Research Institution
      Hokkaido University
  •  Formation and Characterization of High Density Semiconductor Quantum DotsPrincipal Investigator

    • Principal Investigator
      FUKUI Takashi
    • Project Period (FY)
      1997 – 2000
    • Research Category
      Grant-in-Aid for Specially Promoted Research
    • Review Section
      Physics
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  "Development of Novel Technology for Integratio of Single Electron Devices"

    • Principal Investigator
      KAWABE Mitsuo
    • Project Period (FY)
      1996 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      TSUKUBA UNIVERSITY
  •  Developement of Contactless and Non-Destructive Capacitance-Voltage Measurement System in Ultra-High Vacuum

    • Principal Investigator
      HASEGAWA Hideki
    • Project Period (FY)
      1996 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  量子半導体プロセス技術

    • Principal Investigator
      中島 尚男
    • Project Period (FY)
      1994 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Osaka University
  •  Fabrication and Characterization of Self-organized Quantum Nano-structures.Principal Investigator

    • Principal Investigator
      FUKUI Takashi
    • Project Period (FY)
      1994 – 1995
    • Research Category
      Grant-in-Aid for General Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      HOKKAIDO UNIVERSITY
  •  化合物半導体清浄表面と有機金属との相互作用

    • Principal Investigator
      大野 英男
    • Project Period (FY)
      1993
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Hokkaido University
  •  化合物半導体清浄表面と有機金属との相互作用

    • Principal Investigator
      大野 英男
    • Project Period (FY)
      1992
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Hokkaido University
  •  Fabrication and Characterization of Semiconductor Quantum Dots by Selective Area GrantPrincipal Investigator

    • Principal Investigator
      FUKUI Takashi
    • Project Period (FY)
      1992 – 1993
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      Hokkaido University
  •  Fabrication of Highly Functional MMICs Using Traveling Wave Interaction Mode and Static Magnetic Wave Mode

    • Principal Investigator
      AKAZAWA Masamichi
    • Project Period (FY)
      1992 – 1993
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      電子材料工学
    • Research Institution
      Hokkaido University

All 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 Other

All Journal Article Presentation Book Patent

  • [Book] Handbook of Crystal Growth, Vol I Chapter 18 "Growth of Semiconductor Nanocrystals"2015

    • Author(s)
      Tomioka K, Fukui T.
    • Total Pages
      46
    • Publisher
      Elsevier
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Book] ナノワイヤ最新技術の基礎と応用展開2013

    • Author(s)
      福井孝志
    • Total Pages
      241
    • Publisher
      シーエムシー出版
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Book] Semiconductor Nanowire and Their Optical Applications, edited by G-C. Yi2012

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Total Pages
      36
    • Publisher
      Wiley
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Journal Article] Crystal phase transition to green emission wurtzite AlInP by crystal structure transfer2016

    • Author(s)
      Yoshihiro Hiraya, Fumiya Ishizaka, Katsuhiro Tomioka and Takashi Fukui
    • Journal Title

      Applied Physics Express

      Volume: 9 Issue: 3 Pages: 035502-035502

    • DOI

      10.7567/apex.9.035502

    • NAID

      210000137834

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007, KAKENHI-PROJECT-14J01389
  • [Journal Article] Selective-area growth of InAs nanowires on Ge and vertical transistor application2015

    • Author(s)
      Katsuhiro Tomioka, Fumiya Ishizaka, Takashi Fukui
    • Journal Title

      Nano Letters

      Volume: 15 Issue: 11 Pages: 7253-7257

    • DOI

      10.1021/acs.nanolett.5b02165

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007, KAKENHI-PROJECT-14J01389
  • [Journal Article] InGaAs axial-junction nanowaire-array solar cells2015

    • Author(s)
      E. Nakai, M. Chen, M. Yoshimura, K. Tomioka, and T,Fukui
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 54 Issue: 1 Pages: 015201-015201

    • DOI

      10.7567/jjap.54.015201

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-14J01520, KAKENHI-PROJECT-23221007
  • [Journal Article] Growth of wurtzite GaP in InP/GaP core-shell nanowires by Selective-area MOVPE2015

    • Author(s)
      F. Ishizaka, Y. Hiraya, K. Tomioka, and T. Fukui
    • Journal Title

      Journal of Crystal Growth

      Volume: 411 Pages: 71-75

    • DOI

      10.1016/j.jcrysgro.2014.10.024

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-14J01389, KAKENHI-PROJECT-23221007
  • [Journal Article] Surrounding-Gate Tunnel FET Using InAs/Si Heterojunction2015

    • Author(s)
      K. Tomioka, J. Motohisa, T. Fukui
    • Journal Title

      ECS Transaction

      Volume: 69 Pages: 109-118

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Journal Article] Application of free-standing InP nanowire arrays and their optical properties for resource-saving solar cells2015

    • Author(s)
      M. Chen, E. Nakai, K. Tomioka, and T.Fukui
    • Journal Title

      Applied Physics Express

      Volume: 8 Issue: 1 Pages: 012301-012301

    • DOI

      10.7567/apex.8.012301

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-14J01520, KAKENHI-PROJECT-23221007
  • [Journal Article] Vertical Tunnel FETs Using III-V Nanowire/Si Heterojunctions2014

    • Author(s)
      Katsuhiro Tomioka, Takashi Fukui
    • Journal Title

      ECS Transaction

      Volume: 61 Pages: 81-89

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Journal Article] Recent progress in integration of III-V nanowire transistors on Si substrate by selective-area growth2014

    • Author(s)
      Katsuhiro Tomioka, Takashi Fukui
    • Journal Title

      Journal of Physs D: Applied Physics

      Volume: 47 Issue: 39 Pages: 394001-394001

    • DOI

      10.1088/0022-3727/47/39/394001

    • NAID

      120005512025

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Journal Article] III-V族化合物半導体ナノワイヤ太陽電池2014

    • Author(s)
      福井孝志、吉村正利、中井栄治、冨岡克広
    • Journal Title

      日本結晶成長学会誌

      Volume: 41 Pages: 29-34

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Journal Article] Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction2014

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Journal Title

      Applied Physics Letters

      Volume: 104 Issue: 7

    • DOI

      10.1063/1.4865921

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Journal Article] Indium Phoshide Core-Shell Nanowire Array Solar Cells with Lattice-Mismatched Window Layer2013

    • Author(s)
      M. Yoshimura, et al.
    • Journal Title

      Applied Physics Letters

      Volume: 103 Issue: 24

    • DOI

      10.1063/1.4847355

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-11J01867, KAKENHI-PROJECT-23221007
  • [Journal Article] GaAs/InGaP Core-Multishell Nanowire-Array-Based Solar Cells2013

    • Author(s)
      E. Nakai, M. Yoshimura, et al.
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52 Issue: 5R Pages: 055002-055002

    • DOI

      10.7567/jjap.52.055002

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-11J01867, KAKENHI-PROJECT-23221007
  • [Journal Article] Indium Phosphide Core-Shell Nanowire Array Solar Cells with Lattice-Mismatched Window Layer2013

    • Author(s)
      M. Yoshimura, et al.
    • Journal Title

      Applied Physics Express

      Volume: 6 Issue: 5 Pages: 052301-052301

    • DOI

      10.7567/apex.6.052301

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-11J01867, KAKENHI-PROJECT-23221007
  • [Journal Article] Bimolecular interlayer scattering of electrons in InP/InAs/InP core-multishell nanowires2013

    • Author(s)
      Y. Masumoto, K. Goto, S. Tomimoto, P. Mohan, J. Motohisa, T. Fukui
    • Journal Title

      JOURNAL OF LUMINESCENCE

      Volume: 133 Pages: 135-137

    • DOI

      10.1016/j.jlumin.2011.09.036

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007, KAKENHI-PROJECT-23340084, KAKENHI-PROJECT-23656009, KAKENHI-PUBLICLY-24102702
  • [Journal Article] Sub 60 mV/decade Switch Using an InAs Nanowire-Si Heterojunction and Turn-on Voltage Shift with a Pulsed Doping Technique2013

    • Author(s)
      Katsuhiro Tomioka, Masatoshi Yoshimura, and Takashi Fukui
    • Journal Title

      Nano Letters

      Volume: 13 Issue: 12 Pages: 5822-5826

    • DOI

      10.1021/nl402447h

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Journal Article] van der Waals Epitaxial Double Heterostructure: InAs/Single-Layer Graphene/InAs2013

    • Author(s)
      Y. J. Hong, J.W.Yang, W. H. Lee, R. S. Ruoff, K. S. Kim, T. Fukui
    • Journal Title

      Advanced Materials

      Volume: 25 Issue: 47 Pages: 6847-6853

    • DOI

      10.1002/adma.201302312

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Journal Article] Indium-Rich InGaP Nanowires Formed on InP(111)A Substrates by Selective-Area Metal Organic Vapor Phase Epitaxy2013

    • Author(s)
      Fumiya Ishizaka, Keitaro Ikejiri, Katsuhiro Tomioka, and Takashi Fukui
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 52 Issue: 4S Pages: 04CH05-04CH05

    • DOI

      10.7567/jjap.52.04ch05

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-12J01477, KAKENHI-PROJECT-23221007
  • [Journal Article] 半導体ナノワイヤデバイスの新展開-縦型トランジスタ応用2013

    • Author(s)
      冨岡 克広、福井 孝志
    • Journal Title

      電子情報通信学会論文誌C

      Volume: J96-C Pages: 221-230

    • NAID

      110009657215

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Journal Article] Energy state of InGaAs quantum dots on SiO2-patterned vicinal substrate2012

    • Author(s)
      Hyo Jin Kim, Junichi Mothohisa and Takashi Fukui
    • Journal Title

      Nanoscale Research Letters

      Volume: 7 Issue: 1 Pages: 1-5

    • DOI

      10.1186/1556-276x-7-104

    • NAID

      120003994107

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Journal Article] GaAs nanowire growth on polycrystalline silicon thin films using selective-area MOVPE2012

    • Author(s)
      Keitaro Ikejiri, Fumiya Ishizaka, Katsuhiro Tomioka, and Takashi Fukui
    • Journal Title

      Nanotechnology

      Volume: 24 Issue: 11 Pages: 115304-115304

    • DOI

      10.1088/0957-4484/24/11/115304

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-12J01477, KAKENHI-PROJECT-23221007
  • [Journal Article] A III-V nanowire channel on Si for high-performance vertical transistors2012

    • Author(s)
      K. Tomioka, M. Yoshimura, T. Fukui
    • Journal Title

      Nature

      Volume: 488 Issue: 7410 Pages: 189-192

    • DOI

      10.1038/nature11293

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Journal Article] Position-Controlled III-V Compound Semiconductor Nanowire Solar Cells by Selective-Area Metal-Organic Vapor Phase Epitaxy2012

    • Author(s)
      T. Fukui, M. Yoshimura, et al.
    • Journal Title

      AMBIO

      Volume: 41 (Supplement 2) Issue: S2 Pages: 119-124

    • DOI

      10.1007/s13280-012-0266-5

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-11J01867, KAKENHI-PROJECT-23221007
  • [Journal Article] van der Waals Epitaxy of InAs Nanowires Vertically Aligned on Single-Layer Graphene2012

    • Author(s)
      Young Joon Hong, Wi Hyoung Lee, Yaping Wu, Rodney S.Ruoff, Takashi Fukui
    • Journal Title

      Nano Letters

      Volume: 12(in press) Issue: 3 Pages: 1431-1436

    • DOI

      10.1021/nl204109t

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-11F01363, KAKENHI-PROJECT-23221007
  • [Journal Article] Vibrational modes of GaAs hexagonal nanopillar arrays studied with ultrashort optical pulses2012

    • Author(s)
      Hirotaka Sakuma, Motonobu Tomoda, Paul H.Otsuka, Osamu Matsuda, Oliver B.Wright, Takashi Fukui, Katsuhiro Tomioka, Istvan A.Veres
    • Journal Title

      APPLIED PHYSICS LETTERS

      Volume: 100 Issue: 13

    • DOI

      10.1063/1.3696380

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-10F00795, KAKENHI-PROJECT-22246012, KAKENHI-PROJECT-23221007
  • [Journal Article] 半導体ナノワイヤデバイス応用の新展開2012

    • Author(s)
      冨岡 克広、福井 孝志
    • Journal Title

      応用物理

      Volume: 81 Pages: 59-64

    • Data Source
      KAKENHI-PROJECT-23221007
  • [Journal Article] Longitudinal ana transverse exciton-spin relaxation in a single InAsP quantum dot embedded inside a standing InP nanowire using photoluminescence spectroscopy2012

    • Author(s)
      笹倉弘理
    • Journal Title

      Physical Review B

      Volume: 85 Issue: 7

    • DOI

      10.1103/physrevb.85.075324

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21560001, KAKENHI-PROJECT-23221007, KAKENHI-PROJECT-24560001
  • [Journal Article] Bidirectional Growth of Indium Phosphide Nanowires2012

    • Author(s)
      Keitaro Ikejiri, Fumiya Ishizaka, Katsuhiro Tomioka, and Takashi Fukui
    • Journal Title

      Nano Letters

      Volume: 12 Issue: 9 Pages: 4770-4774

    • DOI

      10.1021/nl302202r

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-12J01477, KAKENHI-PROJECT-23221007
  • [Journal Article] III-V Nanowires on Si Substrate: Selective-Area Growth and Device Applications (Invited)2011

    • Author(s)
      K. Tomioka, T. Tanaka, S. Hara, K. Hiruma, and T. Fukui
    • Journal Title

      IEEE J. Select. Topics Quan. Electron.

      Volume: 17 Issue: 4 Pages: 1112-1129

    • DOI

      10.1109/jstqe.2010.2068280

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007, KAKENHI-PROJECT-23360129
  • [Journal Article] Selective-area growth of III-V nanowires and their applications (review paper)2011

    • Author(s)
      K. Tomioka, K. Ikejiri, T. Tanaka, J. Motohisa, S. Hara, K. Hiruma, and T. Fukui
    • Journal Title

      J. Mater. Res.

      Volume: 26 Issue: 17 Pages: 2127-2141

    • DOI

      10.1557/jmr.2011.103

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007, KAKENHI-PROJECT-23360129
  • [Journal Article] Ferromagnetic MnAs Nanocluster Composites Position-Controlled on GaAs (111)B Substrates toward Lateral Magnetoresistive Devices2011

    • Author(s)
      K. Komagata, S. Hara, S. Ito, and T. Fukui
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 50 Issue: 6S Pages: 06GH01-06GH01

    • DOI

      10.1143/jjap.50.06gh01

    • NAID

      210000070719

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007, KAKENHI-PROJECT-23360129
  • [Journal Article] Growth and Characterization of a GaAs Quantum Well Buried in GaAsP/GaAs Vertical Heterostructure Nanowires by Selective-Area Metal Organic Vapor Phase Epitaxy2011

    • Author(s)
      S. Fujisawa, T. Sato, S. Hara, J. Motohisa, K. Hiruma, and T. Fukui
    • Journal Title

      Jpn. J. Appl. Phys

      Volume: 50 Issue: 4S Pages: 04DH03-04DH03

    • DOI

      10.1143/jjap.50.04dh03

    • NAID

      210000070340

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Journal Article] Polarized photoluminescence from single wurtzite InP/InAs/InP core-multishell nanowires2011

    • Author(s)
      Masumoto, Y. Hirata, Y. Mohan, P. Motohisa, J. Fukui, T
    • Journal Title

      APPLIED PHYSICS LETTERS

      Volume: 98 Issue: 21

    • DOI

      10.1063/1.3592855

    • NAID

      120007130884

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007, KAKENHI-PROJECT-23340084, KAKENHI-PROJECT-23656009
  • [Journal Article] Controlled van der Waals Heteroepitaxy of InAs Nanowires on Carbon Honeycomb Lattices2011

    • Author(s)
      Young Joon Hong, Takashi Fukui
    • Journal Title

      ACS Nano

      Volume: 5 Issue: 9 Pages: 7576-7584

    • DOI

      10.1021/nn2025786

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-11F01363, KAKENHI-PROJECT-23221007
  • [Journal Article] Zinc Blende and Wurtzite Crystal Phase Mixing and Transition in Indium Phosphide Nanowires2011

    • Author(s)
      K. Ikejiri, Y. Kitauchi, K. Tomioka, J. Motohisa, and T. Fukui
    • Journal Title

      Nano Lett.

      Volume: 11 Issue: 10 Pages: 4314-4318

    • DOI

      10.1021/nl202365q

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Journal Article] Lattice-mismatched InGaAs nanowires formed on GaAs(111)B by selective-area MOVPE2011

    • Author(s)
      M.Yoshimura, K.Tomioka, K.Hiruma, S.Hara, J.Motohisa, T.Fukui
    • Journal Title

      JOURNAL OF CRYSTAL GROWTH

      Volume: VOL.315 Pages: 148-151

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates2010

    • Author(s)
      T.Tanaka, K.Tomioka, S.Hara, J.Motohisa, E.Sano, T.Fukui
    • Journal Title

      Applied Physics Express VOL.3

    • NAID

      10027013579

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] GaAs/AlGaAs Core Multishell Nanowire-Based Light-Emitting Diodes on Si2010

    • Author(s)
      K.Tomioka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
    • Journal Title

      Nano Letters Vol.10

      Pages: 1639-1644

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Vertical Surrounding Gate Transistors using single InAs Nanowires Grown on Si Substrate2010

    • Author(s)
      T.Tanaka, K.Tomioka, S.Hara, J.Motohisa, T.Fukui
    • Journal Title

      Applied Physics Express Vol.3

    • NAID

      10027013579

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Analysis of twin defects in GaAs nanowires and tetrahedral and their correlation to GaAs(111)B surface reconstructions in selective-area metal organic vapour-phase epitaxy2010

    • Author(s)
      H.Yoshida, K.Ikejiri, T.Sato, S.Hara, K.Hiruma, J.Motohisa, T.Fukui
    • Journal Title

      Journal of Crystal Growth VOL.312

      Pages: 51-57

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Growth and characterization of InGaAs nanowires formed on GaAs(111)B by selective-area metal organic vapor phase epitaxy2010

    • Author(s)
      M.Yoshimura, K.Tomioka, K.Hiruma, S.Hara, J.Motohisa, T.Fukui
    • Journal Title

      JAPANESE JOURNAL OF APPLIED PHYSICS

      Volume: VOL.49

    • NAID

      210000068312

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Structural transition in indium phosphide nanowires2010

    • Author(s)
      Y.Kitauchi, Y.Kobayashi, K.Tomioka, S.Hara, K.Hiruma, T.Fukui, J.Motohisa
    • Journal Title

      NANO LETTERS

      Volume: VOL.10 Pages: 1699-1703

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si2010

    • Author(s)
      K.Tomioka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
    • Journal Title

      NANO LETTERS

      Volume: VOL.10 Pages: 1639-1644

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Fabrication and characterization of GaAs quantum well buried in AlGaAs/GaAs heterostructure nanowires2010

    • Author(s)
      A.Hayashida, T.Sato, S.Hara, J.Motohisa, K.Hiruma, T.Fukui
    • Journal Title

      JOURNAL OF CRYSTAL GROWTH

      Volume: VOL.312 Pages: 3592-3598

    • NAID

      120002678122

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Single GaAs/GaAsP coaxial core-shell nanowire lasers2009

    • Author(s)
      B. Hua, J. Motohisa, Y. Kobayashi, S. Hara, T. Fukui
    • Journal Title

      Nano Letters 9

      Pages: 112-116

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Single GaAs/GaAsP Coaxial Core-Shell Nanowire Lasers2009

    • Author(s)
      B.Hua, J.Motohisa, Y.Kobayashi, S.Hara, T.Fukui
    • Journal Title

      Nano Letters Vol.9

      Pages: 112-116

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core-shell nanowires on Si(111) substrate2009

    • Author(s)
      K. Tomioka, Y. Kobayashi, J. Motohisa, S. Hara and T. Fukui
    • Journal Title

      Nanotechnology 20

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Transient band-bending in InP/InAs/InP core-multishell nanowires2009

    • Author(s)
      K. Goto, S. Tomimoto, B. Pal, Y. Masumoto, R Mohan, J. Motohisa and T.Fukui
    • Journal Title

      Physica Status Solidi C 6

      Pages: 205-208

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] One- and two-dimensional spectral diffusions in InP/InAs/InP core-multishell nanowires2009

    • Author(s)
      K.Goto, M.Ikezawa, S.Tomimoto, B.Pal, Y.Masumoto, P.Mohan, J.Motohisa, T.Fukui
    • Journal Title

      Japanese Journal of Applied Physics VOL.48

    • NAID

      210000066714

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Fabry-Perot microcavity modes observed in the micro-photoluminescence spectra of the single nanowire with InGaAs/GaAs heterostructure2009

    • Author(s)
      L.Yang, J.Motohisa, T.Fukui, L.X.Jia, L.Zhang, M.M.Geng. P.Chen, Y.L.Liu
    • Journal Title

      Optics Express VOL.17

      Pages: 9337-9346

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Magnetic domain characterization of anisotropic-shaped MnAs nanoclusters position-controlled by selective-area metal-organic vaporphase epitaxy2009

    • Author(s)
      S.Ito, S.Hara, T.Wakatsuki, T.Fukui
    • Journal Title

      Applied Physics Letters VOL.94

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Growth direction control of ferromagnetic MnAs grown by selective-area metal-organic vapor phase epitaxy2009

    • Author(s)
      T.Wakatsuki, S.Hara, S.Ito, D.Kawamura, T.Fukui
    • Journal Title

      Japanese Journal of Applied Physics VOL.48

    • NAID

      210000066648

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Growth of Core-Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy2009

    • Author(s)
      H. Goto, K. Nozaki, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa and T. Fukui
    • Journal Title

      Applied Physics Express vol. 2

    • NAID

      10025085293

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Single GaAs/GaAsP coaxial core-shell nanowaire lasers2009

    • Author(s)
      B. Hua, J. Motohisa, Y. Kobayashi, S. Hara and T. Fukui
    • Journal Title

      Nano Letters vol. 9

      Pages: 112-116

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Growth of core-shell InP nanowires for photovoltaic application by selective-area metal-organic vapor-phase epitaxy2009

    • Author(s)
      H. Goto, K. Nozaki, K. Tomioka, S. Hara, K. Hiruma, J. Motohisa and T. Fukui
    • Journal Title

      Applied Physics Express 2

    • NAID

      10025085293

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Growth of Core-Shell InP nanowires for Photovoltaic Application by Selective-Area Metal-Organic Vapor-Phase Epitaxy2009

    • Author(s)
      H.Goto, N.Nosaki, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa, T.Fukui
    • Journal Title

      Applied Physics Express Vol.2

    • NAID

      10025085293

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Formation of InP and InGaAs air-hole arrays on InP(111) substrates by selective-area metal-organic vapor-phase epitaxy2008

    • Author(s)
      S. Hashimoto, J. Takeda, A. Tarumi, S. Hara, J. Motohisa and T. Fukui
    • Journal Title

      Japanese journal of applied physics 47

      Pages: 3354-3358

    • NAID

      210000064731

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Microcavity structures in single GaAs nanowires2008

    • Author(s)
      B. Hua, J. Motohisa, S. Hara and T. Fukui
    • Journal Title

      Physica Status Solidi C 5

      Pages: 2722-2725

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Spectroscopy and imaging of GaAs-InGaAs-GaAs heterostructured nanowires grown by selective-area metalorganic vapor phase epitaxy2008

    • Author(s)
      M. Fukui, Y. Kobayashi, J. Motohisa and T. Fukui
    • Journal Title

      Physica Status Solidi C 5

      Pages: 2743-2745

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Fabrication and excitation-power-density-dependent micro-photoluminescence of hexagonal nanopillars with a single InGaAs/GaAs quantum well2008

    • Author(s)
      L. Yang, J. Motohisa, K. Tomioka, J. Takeda, T. Fukui M.M. Geng, L.X. Jia, L. Zhang and Y.L. Liu
    • Journal Title

      Nanotechnology 19

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Growth characteristics of GaAs nanowires obtained by selective-area metal-organic vapour-phase epitaxy2008

    • Author(s)
      K. Ikejiri, T. Sato, H. Yoshida, K. Hiruma, J. Motohisa, S. Hara and T. Fukui
    • Journal Title

      Nanotechnology 19

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] MOVPE選択成長法を用いたIII-V族化合物半導体ナノワイヤの形成2008

    • Author(s)
      冨岡克弘、佐藤拓也、原真二郎、本久順一、福井孝志
    • Journal Title

      表面科学 29

      Pages: 726-730

    • NAID

      10024407649

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Type-II behavior in wurtzite InP/InAs/InP core-multishell nanowires2008

    • Author(s)
      B. Pal, K. Goto, Y. Mosumoto, P. Mohan, J. Motohisa and T. Fukui
    • Journal Title

      Applied Physics Letters 93

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Metal-organic vapor phase epitaxial growth condition dependences of MnAs nanocluster formation on GaInAs (111)A surfaces2008

    • Author(s)
      H. Iguchi, S. Hara, J. Motohisa and T. Fukui
    • Journal Title

      Japanese journal of applied physics 47

      Pages: 3253-3256

    • NAID

      210000064709

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Control of InAs nanowire growth directions on Si2008

    • Author(s)
      K. Tomioka, J. Motohisa, S. Hara and T. Fukui
    • Journal Title

      Nano Letters 8

      Pages: 3475-3480

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] SA-MOVPE of InGaAs nanowires and their compositions studied by micro-PL measurement2008

    • Author(s)
      T. Sato, Y. Kobayashi, J. Motohisa, S. Hara and T. Fukui
    • Journal Title

      Journal of Crystal Growth 310

      Pages: 5111-5113

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Characterization of Fabry-Perot microcavity modes in GaAs nanowires fabricated by selective-area metal organic vapor phase epitaxy2007

    • Author(s)
      B. Hua, J. Motohisa, Y. Ding, S. Hara, T. Fukui
    • Journal Title

      Applied physics letters 91

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Self-assembled formation of ferromagnetic MnAs nanoclusters on GalnAs/InP (111) B layers by metal-organic vapor phase epitaxy2007

    • Author(s)
      S.Hara, T.Fukui
    • Journal Title

      JOURNAL OF CRYSTAL GROWTH 298

      Pages: 612-615

    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Aharonov-Bohm oscillations in photoluminescence from charged exciton in quantum tubes2007

    • Author(s)
      K. Tsumura, S. Nomura, P. Mohan, J. Motohisa, T. Fukui
    • Journal Title

      Japanese journal of applied physics 46

    • NAID

      120007138780

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Crystallographic structure of InAs nanowires studied by transmission electron microscopy2007

    • Author(s)
      K. Tomioka, J. Motohisa, S. Hara, T. Fukui
    • Journal Title

      Japanese journal of applied physics 46

    • NAID

      210000063794

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Electrical Characterizations of InGaAs Nanowire-Top-Gate Field-Effect Transistors by Selective-Area Metal Organic Vapor Phase Epitaxy2007

    • Author(s)
      J. Noborisaka, T. Sato, J. Motohisa, S. Hara, K. Tomioka and T. Fukui
    • Journal Title

      Japanese Journal of Applied Physics vol. 46

      Pages: 7562-7568

    • NAID

      40015705160

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Growth of highly uniform InAs nanowire arrays by selective-area MOVPE2007

    • Author(s)
      K.Tomioka, T.Fukui
    • Journal Title

      JOURNAL OF CRYSTAL GROWTH 298

      Pages: 644-647

    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Observation of microcavity modes and waveguides in InP nanowires fabricated by selective-area metalorganic vapor-phase epitaxy2007

    • Author(s)
      Y. Ding, J. Motohisa, B. Hua, S. Hara, T. Fukui
    • Journal Title

      Nano letters 7

      Pages: 3598-3602

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE2007

    • Author(s)
      K.Ikejiri, T.Fukui
    • Journal Title

      JOURNAL OF CRYSTAL GROWTH 298

      Pages: 616-619

    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Photonic crystal slabs with hexagonal air holes fabricated by selective area metal organic vapor phase epitaxy2007

    • Author(s)
      L.Yang, T.Fukui
    • Journal Title

      SENSORS AND ACTUATORS A-PHYSICAL 133 (2)

      Pages: 288-293

    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Electrical characteristics of InGaAs nanowire-top-gate field effect transistors by selective-area metal organic vapor phase epitaxy2007

    • Author(s)
      J. Noborisaka, T. Sato, J. Motohisa, S. Hara, K. Tomioka, T. Fukui
    • Journal Title

      Japanese journal of applied physics 46

      Pages: 7562-7568

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Semiconductor Nanowires and Their Application to Nanodevices (in Japanese)2006

    • Author(s)
      Junichi Motohisa, Takashi Fukui
    • Journal Title

      Oyo Buturi 75

      Pages: 296-302

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Hexagonal Ferromagnetic MnAs Nanocluster Formation on GaInAs/InP (111)B Layers by Metal-Organic Vapor Phase Epitaxy2006

    • Author(s)
      S.Hara, T.Fukui
    • Journal Title

      Applied Physics Letters (AIP) 89

      Pages: 113111-113111

    • Data Source
      KAKENHI-PROJECT-18360142
  • [Journal Article] Catalyst-free selective area MOVPE of semiconductor nanowires2006

    • Author(s)
      J.Motohisa, T.Fukui
    • Journal Title

      Proceedings of SPIE 6370

    • Data Source
      KAKENHI-PROJECT-17656019
  • [Journal Article] Size-dependent photoluminescence of hexagonal nanopillars with single InGaAs/GaAs quantum wells fabricated by selective-area metal organic vapor phase epitaxy2006

    • Author(s)
      L.Yang, T.Fukui
    • Journal Title

      APPLIED PHYSICS LETTERS 89 (20)

      Pages: 203110-203110

    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Hexagonal ferromagnetic MnAs nanocluster formation on GaInAs/InP (111)B layers by metal-organic vapor phase epitaxy2006

    • Author(s)
      S.Hara, T.Fukui
    • Journal Title

      APPLIED PHYSICS LETTERS 89 (11)

      Pages: 113111-113111

    • Data Source
      KAKENHI-PROJECT-18002003
  • [Journal Article] Photonic Crystal Slabs with Hexagonal Air Holes Fabricated by Selective Area Metal Organic Vapor Phase Epitaxy2006

    • Author(s)
      Lin Yang, Junichi Motohisa, Junichiro Takeda, Takashi Fukui
    • Journal Title

      Sensors and Actuators A (To be published)

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Photonic Crystal Slabs with Hexagonal Optical Atoms, Their Application in Waveguides2005

    • Author(s)
      L.Yang, J.Motohisa, T.Fukui
    • Journal Title

      Jpn.J.Appl.Phys Vol.44, No.4B

      Pages: 2531-2536

    • NAID

      10015704763

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Photoluminescnce from single hexagonal nano-wire grown by selective area MOVPE2005

    • Author(s)
      S.Hara, J.Motohisa, J.Noborisaka, J.Takeda, T.Fukui
    • Journal Title

      Inst.Phys.Conf.Ser. No 184

      Pages: 393-398

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] MnAs nanocluster formation on GaInAs/InP(111) layers grown by metal-organic vapor phase epitaxy2005

    • Author(s)
      S.Kara, T.Fukui
    • Journal Title

      2005 MRS Fall Meeting Abstracts (MRS) Symposium EE7.35

      Pages: 760-760

    • Data Source
      KAKENHI-PROJECT-17656100
  • [Journal Article] Suggested procedure for the use of the effective-index method for high-index-contrast photonic crystal slabs2005

    • Author(s)
      Lin Yang, Junichi Motohisa, Takashi Fukui
    • Journal Title

      Opt.Eng. 44

      Pages: 78002-78002

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Controlled growth of highly uniform, axial/radial direction-defined, individually addressable InP nanowire arrays2005

    • Author(s)
      Premila Mohan, Junichi Motohisa, Takashi Fukui
    • Journal Title

      Nanotechnology 16

      Pages: 2903-2907

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy2005

    • Author(s)
      Jinichiro Noborisaka, Junichi Motohisa, Takashi Fukui
    • Journal Title

      Appl. Phys. Lett. 86

      Pages: 213102-213102

    • NAID

      120000960844

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy2005

    • Author(s)
      J.Noborisaka, J.Motohisa, S.Hara, T.Fukui
    • Journal Title

      Applied Physics Letters (AIP) Vol.87, No.9

      Pages: 93109-93109

    • Data Source
      KAKENHI-PROJECT-17656100
  • [Journal Article] Selective-area MOVPE fabrication of GaAs? hexagonal air-hole arrays on GaAs?(111)B substrates using flow-rate modulation mode2005

    • Author(s)
      Junichiro Takeda, Masashi Akabori, Junichi Motohisa, Richard N?tzel, Takashi Fukui
    • Journal Title

      Nanotechnology 16

      Pages: 2954-2957

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Photoluminescence from single hexagonal nano-wire grown by selective area MOVPE2005

    • Author(s)
      S.Hara.J.Motohisa, J.Noborisaka, J.Takeda, T.Fukui
    • Journal Title

      Institute of Physics Conference Series (IOP) No.184

      Pages: 393-398

    • Data Source
      KAKENHI-PROJECT-17656100
  • [Journal Article] Selective area MOVPE growth of InP and InGaAs pillar structures for InP-based two-dimensional photonic crystals2004

    • Author(s)
      M.Inari, J.Takeda, J.Motohisa, T.Fukui
    • Journal Title

      Physica E Vol.21, No.2-4

      Pages: 620-624

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Fabrication and characterization of GaAs two-dimensional air-hole arrays on GaAs (111)A substrates using selective-area MOVPE2004

    • Author(s)
      Junichiro Takeda, Masaru Inari, Junichi Motohisa, Takashi Fukui
    • Journal Title

      Journal of Crystal Growth Volume 272, 1-4

      Pages: 570-575

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates2004

    • Author(s)
      J.Motohisa J.Noborisaka, J.Takeda, M.Inari, T.Fukui
    • Journal Title

      Journal of Crystal Growth v 272, n 1-4

      Pages: 180-185

    • NAID

      120000954504

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Realization of InAs?-based two-dimensional artificial lattice by selective area metalorganic vapor phase epitaxy2004

    • Author(s)
      Premila Mohan, Junichi Motohisa, Takashi Fukui
    • Journal Title

      Applied Physics Letters Volume 84, Issue 14

      Pages: 2664-2666

    • NAID

      120000956837

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Growth and optical properties of 2D photonic crystals based on hexiagonal GaAs/AIGaAs pillar arrays by selective-area metalorganic vapor phase epitaxy2004

    • Author(s)
      J.Motohisa Takeda, M.Inari, T.Fukui
    • Journal Title

      Mat.Res.Soc.Proc. Vol.797

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Growth of GaAs?/AlGaAs hexagonal pillars on GaAs (111)B surfaces by selective-area MOVPE2004

    • Author(s)
      J.Motohisa, J.Takeda, M.Inari, J.Noborisaka, T.Fukui
    • Journal Title

      Physica E v 23, n 3-4

      Pages: 298-304

    • NAID

      120000958778

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] InGaAs nano-pillar array formation on partially masked InP (111)B by selective area metal-organic vapour phase epitaxial growth for two-dimensional photonic crystal application2003

    • Author(s)
      M.Akabori, J.Takeda, J.Motohisa, T.Fukui
    • Journal Title

      Nanotechnology Vol.14, No.10

      Pages: 1071-1074

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Single-electron AND/NAND logic circuits based on a self-organized dot network2003

    • Author(s)
      F.Nakajima, Y.Miyoshi, J.Motohisa, T.Fukui
    • Journal Title

      Appl.Phys.Lett. Vol.83, No.13

      Pages: 2680-2682

    • NAID

      120000953010

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy2003

    • Author(s)
      P.Mohan, F.Nakajima, M.Akabori, J.Motohisa, T.Fukui
    • Journal Title

      Appl.Phys.Lett. Vol.83, No.4

      Pages: 689-691

    • NAID

      120000952950

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Journal Article] Promising low-damage fabrication method for the photonic crystals with hexagonal or triangular air holes : selective area metal organic vapor phase epitaxy

    • Author(s)
      Lin Yang, Junichi Motohisa, Junichiro Takeda, Takashi Fukui
    • Journal Title

      Optics Express Vol.13, No.26

      Pages: 10823-10832

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-15206030
  • [Patent] トンネル電界効果トランジスタ2015

    • Inventor(s)
      冨岡 克広、福井 孝志
    • Industrial Property Rights Holder
      冨岡 克広、福井 孝志
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2015-193196
    • Filing Date
      2015-09-30
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Patent] トンネル効果トランジスタ、その製造方法およびスイッチ素子2014

    • Inventor(s)
      冨岡克広、福井孝志
    • Industrial Property Rights Holder
      冨岡克広、福井孝志
    • Industrial Property Rights Type
      特許
    • Filing Date
      2014-08-12
    • Overseas
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Patent] 発光素子およびその製造方法2014

    • Inventor(s)
      4. 福井孝志、平谷佳大
    • Industrial Property Rights Holder
      4. 福井孝志、平谷佳大
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2014-027399
    • Filing Date
      2014-02-17
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Patent] III-V族化合物半導体ナノワイヤ、電界効果トランジスタおよびスイッチ素子2014

    • Inventor(s)
      冨岡克広、福井孝志
    • Industrial Property Rights Holder
      冨岡克広、福井孝志
    • Industrial Property Rights Type
      特許
    • Filing Date
      2014-10-31
    • Overseas
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Patent] トンネル効果トランジスタ、その製造方法およびスイッチ素子2014

    • Inventor(s)
      冨岡克広、福井孝志
    • Industrial Property Rights Holder
      冨岡克広、福井孝志
    • Industrial Property Rights Type
      特許
    • Filing Date
      2014-08-13
    • Overseas
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Patent] III-V族化合物半導体ナノワイヤ、電界効果トランジスタおよびスイッチ素子2014

    • Inventor(s)
      冨岡克広、福井孝志
    • Industrial Property Rights Holder
      冨岡克広、福井孝志
    • Industrial Property Rights Type
      特許
    • Filing Date
      2014-10-31
    • Overseas
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Patent] トンネル電界効果トランジスタ、その製造方法およびスイッチ素子2013

    • Inventor(s)
      2. 冨岡 克広、福井 孝志
    • Industrial Property Rights Holder
      2. 冨岡 克広、福井 孝志
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-168048
    • Filing Date
      2013-08-13
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Patent] 発光素子およびその製造方法2013

    • Inventor(s)
      1. 福井孝志、石坂文哉、冨岡克広
    • Industrial Property Rights Holder
      1. 福井孝志、石坂文哉、冨岡克広
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-138894
    • Filing Date
      2013-07-02
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Patent] III-V族化合物ナノワイヤ、電界効果トランジスタおよびスイッチ素子2013

    • Inventor(s)
      2. 冨岡 克広、福井 孝志
    • Industrial Property Rights Holder
      2. 冨岡 克広、福井 孝志
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2013-226675
    • Filing Date
      2013-10-13
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Patent] 半導体装置及び半導体装置の製造法2010

    • Inventor(s)
      冨岡克広、福井孝志、本久順一、原真二郎
    • Industrial Property Rights Holder
      北海道大学
    • Industrial Property Number
      2010-040019
    • Filing Date
      2010-02-25
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Patent] 発光素子および製造方法2009

    • Inventor(s)
      冨岡克広、福井孝志
    • Industrial Property Rights Holder
      北海道大学
    • Industrial Property Number
      2009-273561
    • Filing Date
      2009-12-03
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Patent] トンネル電界効果トランジスタおよびその製造方法2009

    • Inventor(s)
      冨岡克広、福井孝志、田中智隆
    • Industrial Property Rights Holder
      北海道大学
    • Industrial Property Number
      2009-227564
    • Filing Date
      2009-09-30
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Patent] 太陽電池、カラーセンサ、ならびに発光素子および受光素子の製造方法2009

    • Inventor(s)
      比留間健之、本久順一、福井孝志
    • Industrial Property Rights Holder
      北海道大学
    • Industrial Property Number
      2009-272140
    • Filing Date
      2009-11-30
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Patent] ナノワイヤ太陽電池及びその製造方法2009

    • Inventor(s)
      後藤肇、福井孝志、本久順一、比留間健之
    • Industrial Property Rights Holder
      本田技研工業(株)、北海道大学
    • Industrial Property Number
      2009-295806
    • Filing Date
      2009-12-25
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Patent] 多接合太陽電池の製造方法2008

    • Inventor(s)
      後藤肇、本久順一、福井孝志
    • Industrial Property Rights Holder
      (株)本田技術研究所、北海道大学
    • Filing Date
      2008-09-03
    • Overseas
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Patent] 半導体発光素子アレー、およびその製造方法2008

    • Inventor(s)
      比留間 健之、原 真二郎、本久 順一、福井 孝志
    • Industrial Property Rights Holder
      北海道大学
    • Filing Date
      2008-10-17
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Patent] 半導体構造物の製造方法2008

    • Inventor(s)
      冨岡克弘、福井孝志、本久順一、原真二郎
    • Industrial Property Rights Holder
      北海道大学
    • Filing Date
      2008-09-01
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Patent] 半導体発光素子アレー、およびその製造方法2008

    • Inventor(s)
      比留間健之、原真二郎、本久順一、福井孝志
    • Industrial Property Rights Holder
      北海道大学
    • Filing Date
      2008-10-17
    • Overseas
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Patent] 半導体発光素子アレー、およびその製造方法2008

    • Inventor(s)
      比留間健之、原真二郎、本久順一、福井孝志
    • Industrial Property Rights Holder
      北海道大学
    • Filing Date
      2008-10-17
    • Overseas
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Patent] ナノワイヤ太陽電池の構造と作製方法2008

    • Inventor(s)
      後藤肇、大橋智昭、本久順一、福井孝志
    • Industrial Property Rights Holder
      (株)本田技術研究所、北海道大学
    • Filing Date
      2008-07-16
    • Overseas
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Patent] 半導体発光素子アレー、およびその製造方法2007

    • Inventor(s)
      比留間健之・福井孝志・本久順一・原 真二郎
    • Industrial Property Rights Holder
      北海道大学
    • Industrial Property Number
      2007-214119
    • Filing Date
      2007-08-20
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Structural and Optical Properties of Wurtzite AlInP Grown on Wurtzite InP Nanowires2015

    • Author(s)
      F. Ishizaka1, Y. Hiraya, K. Tomioka, T. Fukui
    • Organizer
      2015 MRS Fall Meeting
    • Place of Presentation
      Sheraton Boston, Massachusetts, USA
    • Year and Date
      2015-11-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Growth of AlGaP and AlInP on GaN Substrates Toward Transferring Wurtzite Structure2015

    • Author(s)
      Yoshihiro Hiraya, Fumiya Ishizaka, Katsuhiro Tomioka and Takashi Fukui
    • Organizer
      Compound Semiconductor Week 2015
    • Place of Presentation
      University of California Santa Barbara, USA
    • Year and Date
      2015-06-28
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V nanowire channel on Si: From high-performance Vertical FET to steep-slope device2015

    • Author(s)
      K. Tomioka, J. Motohisa, T. Fukui
    • Organizer
      2015 International Symposium on VLSI Technology, Systems and Applications (2015 VLSI-TSA)
    • Place of Presentation
      Ambassador Hotel Hsinchu, Hsinchu, Taiwan
    • Year and Date
      2015-04-27
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Semiconductor nanowire array grown by selective area epitaxy and their applications2015

    • Author(s)
      T. Fukui, F. Ishizaka and K. Tomioka
    • Organizer
      The International Chemical Congress of Pacific Basin Societies 2015
    • Place of Presentation
      Honolulu Convention Center, Hawaii, USA
    • Year and Date
      2015-12-15
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Selective-Area Growth of Vertical InAs Nanowires on Ge(111)2015

    • Author(s)
      Katsuhiro Tomioka, Fumiya Ishizaka, Eiji Nakai, Takashi Fukui
    • Organizer
      2015 MRS Spring Meeting
    • Place of Presentation
      Moscone West, San Francisco, California, USA
    • Year and Date
      2015-04-06
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V Semiconductor Nanowires Grown by Selective Area MOVPE and Their Device Applications2015

    • Author(s)
      T. Fukui, F. Ishizaka and K. Tomioka
    • Organizer
      5th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Place of Presentation
      Lakeshore Hotel, Hsinchu, Taiwan
    • Year and Date
      2015-09-06
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Vertical Tunnel FETs Using III-V Nanowire/Si Heterojunctions2015

    • Author(s)
      K. Tomioka, J. Motohisa, T. Fukui
    • Organizer
      228th ECS Meeting
    • Place of Presentation
      Phoenix Convention Center, Phoenix, Arizona, USA
    • Year and Date
      2015-10-11
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Recent progress in vertical TFET using III-V/Si heterojunction2015

    • Author(s)
      K. Tomioka, J. Motohisa, T. Fukui
    • Organizer
      Steep Transistors Workshop
    • Place of Presentation
      University of Notre Dame, Notre Dame, USA
    • Year and Date
      2015-10-05
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Growth and Characterization of Wurtzite InP/AlInP Core-Shell Nanowires2015

    • Author(s)
      F. Ishizaka1, Y. Hiraya, K. Tomioka, T. Fukui
    • Organizer
      2015 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Sapporo Convention Center, Sapporo Japan
    • Year and Date
      2015-09-27
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Free-Standing InP Nanowire Array and Their Optical Properties toward Resource Saving Solar Cells2015

    • Author(s)
      MuYi Chen, Eiji Nakai, Katsuhiro Tomioka, Takashi Fukui
    • Organizer
      2015 MRS Spring Meeting
    • Place of Presentation
      Moscone West, San Francisco, California, USA
    • Year and Date
      2015-04-06
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Heterogeneous integration of vertical III-V nanowires on Si and Ge and their applications2015

    • Author(s)
      K. Tomioka, J. Motohisa, T. Fukui
    • Organizer
      The 20th American Conference on Crystal Growth and Epitaxy and The 17th Biennial Workshop on Organometallic Vapor Phase Epitaxy
    • Place of Presentation
      Big Sky resort Hotel, Big Sky, Montana, USA
    • Year and Date
      2015-08-02
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Steep-Slope Tunnel FET using InGaAs-InP Core-Shell Nanowire/Si Heterojunction2015

    • Author(s)
      K. Tomioka, F. Ishizaka, J. Motohisa, T. Fukui
    • Organizer
      2015 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Sapporo Convention Center, Sapporo Japan
    • Year and Date
      2015-09-27
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Steep Turn-On Property of Vertical Tunnel FET Using InGaAs-InP Core-Shell Nanowire/Si Heterojunction2015

    • Author(s)
      K. Tomioka, F. Ishizaka, T. Fukui, J. Motohisa
    • Organizer
      2015 MRS Fall Meeting
    • Place of Presentation
      Sheraton Boston, Massachusetts, USA
    • Year and Date
      2015-11-29
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Vertical III-V nanowire transistors for future low-power switches2015

    • Author(s)
      K. Tomioka and T. Fukui
    • Organizer
      12th Sweden - Japan QNANO Workshop,
    • Place of Presentation
      Hjortviken, Hindas, Sweden
    • Year and Date
      2015-09-24
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Vertically Aligned Semiconductor Nanowire Array and Their Applications2015

    • Author(s)
      T. Fukui, F. Ishizaka and K. Tomioka
    • Organizer
      Compound Semiconductor Week 2015
    • Place of Presentation
      University of California Santa Barbara, Santa Barbara, USA
    • Year and Date
      2015-06-28
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] InGaAs nanowire FETs on Si and steep subthreshold-slope transistors2013

    • Author(s)
      K. Tomioka and T. Fukui
    • Organizer
      10th Topical Workshop on Heterostructure Microelectronics (TWHM 2013)
    • Place of Presentation
      Hakodate Kokusai Hotal, Hakodate, Japan
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Wurtzite InP/GaP core-shell nanowires toward direct band gap transition2013

    • Author(s)
      F. Ishizaka, K. Ikejiri, K. Tomioka, and T. Fukui
    • Organizer
      the 5th International Conference on One-dimensional Nanomaterials (ICON2013)
    • Place of Presentation
      Imperial Palase Hotel, Annecy, France
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Highly Conductive InAs Nanowire Vertical Transistors on Si2013

    • Author(s)
      Katsuhiro Tomioka, Masatoshi Yoshimura, and Takashi Fukui
    • Organizer
      MRS spring meeting 2013
    • Place of Presentation
      Moscone West Convention Center, San Francisco, USA
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] ITO/p-InP Heterojunction NW-Array Solar Cells2013

    • Author(s)
      M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui
    • Organizer
      TUM-IAS Focus Workshop
    • Place of Presentation
      Technische Universitat Munchen, Munich, Germany,
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V Compound Semiconductor Nanowire Solar Cells2013

    • Author(s)
      Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai and Katsuhiro Tomioka
    • Organizer
      TMU-IAS Focus Workshop
    • Place of Presentation
      Technische Universitat Munchen, Munich, Germany
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Vertical III-V Nanowire-Channel on Si2013

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Organizer
      224th ECS meeting
    • Place of Presentation
      Hilton San Francisco Union Square, San Francisco, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V nanowire channels on Si; vertical FET applications2013

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Organizer
      2013 Silicon nanoelectronics Workshop (SNW 2013)
    • Place of Presentation
      Rihga Royal Hotel Kyoto, Kyoto, KYoto, Japan
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V Compound Semiconductor Nanowire Solar Cells2013

    • Author(s)
      Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai and Katsuhiro Tomioka
    • Organizer
      IUMRS ICAM
    • Place of Presentation
      Qingdao International Convention Center, Qingdao, China
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V Nanowire/Si Heterojunction Tunnel Field-Effect Transistors2013

    • Author(s)
      K. Tomioka and T. Fukui
    • Organizer
      the 32st Electronic Materials Symposium (EMS-32)
    • Place of Presentation
      Laforet Biwako, Shiga, Japan
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V/Si Heterojunctions for Steep Subthreshold-Slope Transistor2013

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Organizer
      Third Berkeley Symposium on Energy Efficient Electronic Systems
    • Place of Presentation
      University of California Berkeley Banato Hall, Berkeley, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Demonstration of P-Channel Tunnel FET Using Zn-Doped InAs Nanowire/Si Heterojunction and Doping Effect2013

    • Author(s)
      Katsuhiro Tomioka, Masatoshi Yoshimura, Eiji Nakai, and Takashi Fukui
    • Organizer
      MRS fall meeting 2013
    • Place of Presentation
      Hynes Convention Center, Boston, USA
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Integration of III-V nanowires on Si: From high-performance vertical FET to steep-slope switch2013

    • Author(s)
      Katsuhiro Tomioka, Masatoshi Yoshimura, Fumiya Ishizaka, Eiji Nakai, and Takashi Fukui
    • Organizer
      2013 International Electron Devices Meeting
    • Place of Presentation
      Washington Hilton, Washington DC, USA
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Growth of Wurtzite InP/GaP Core-shell Nanowires by Selective-area Metal Organic Vapor Phase Epitaxy2013

    • Author(s)
      F. Ishizaka, K. Ikejiri, K. Tomioka, and T. Fukui
    • Organizer
      the 32st Electronic Materials Symposium (EMS-32)
    • Place of Presentation
      Laforet, Biwako, Shiga, Japan
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Compound Semiconductor Nanowire Solar Cells2013

    • Author(s)
      Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai and Katsuhiro Tomioka
    • Organizer
      JSAP-MRS Joint Symposia
    • Place of Presentation
      Doshisha University, Kyoto, Japan
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V semiconductor nanowires and their photovoltaic device applications2013

    • Author(s)
      Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai Fumiya Ishizaka and Katsuhiro Tomioka
    • Organizer
      12th International Conference on Atomically Controlled Surface, Interface and Nanostructures(ACSIN-12)
    • Place of Presentation
      Tsukuba Convention Center, Tsukuba, Japan
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Selective area growth of III-V semiconductor nanowires and their photovoltaic and electron device applications2013

    • Author(s)
      Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai Fumiya Ishizaka and Katsuhiro Tomioka
    • Organizer
      Nanowires 2013
    • Place of Presentation
      Weizman Institute of Science, Rehovot, Israel
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Integration of III-V nanowires on Si and their applications2013

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Organizer
      The 40th International Symposium on Compound Semiconductors (ISCS 2013)
    • Place of Presentation
      Kobe Convantion Center, Kobe, Japan
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] InGaAs axial junction nanowire array solar cells with AlInP passivation layer2013

    • Author(s)
      E. Nakai, M. Yoshimura, K. Tomioka, and T. Fukui
    • Organizer
      the 5th International Conference on One-dimensional Nanomaterials (ICON2013)
    • Place of Presentation
      Imperial Palase Hotel, Annecy, France
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V Compound Semiconductor Nanowire Solar Cells2013

    • Author(s)
      Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai and Katsuhiro Tomioka
    • Organizer
      2013 Conference on Lasers and Electro-Optics (CREO:2013)
    • Place of Presentation
      San Jose Convention Center, San Jose , USA,
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] ITO/p-InP Hetero-Junction NW-Array Solar Cells2013

    • Author(s)
      M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui
    • Organizer
      the 2013 Europe Material Research Society (E-MRS) Spring Meeting
    • Place of Presentation
      Cogress Center, Strasbourg, France
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] High-performance III-V nanowire transistors on silicon2013

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Organizer
      The Sweden-Japan Workshop on Quantum Nano-Physics and Electronics(QNANO2013)
    • Place of Presentation
      東京大学(東京)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Fabrication and Characterization of InGaAs Axial Junction Nanowire Array Solar Cells2013

    • Author(s)
      E. Nakai, M. Yoshimura, K. Tomioka, and T. Fukui
    • Organizer
      26th International Microprocesses and Nanotechnology Conference (MNC2013)
    • Place of Presentation
      Roiton Sapporo, Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Gate-first process and EOT-scaling of III-V nanowire-based vertical transistors on Si2013

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Organizer
      71st Device Research Conference (DRC 2013)
    • Place of Presentation
      Notre Dame University, Notre Dome, USA
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Zn-compensating effect of channel of InGaAs nanowire/Si heterojunction tunnel FET and steep-turn on switching property2013

    • Author(s)
      Katsuhiro Tomioka, Masatoshi Yoshimura, and Takashi Fukui
    • Organizer
      E-MRS 2013 Spring Meeting
    • Place of Presentation
      Congress Center, Strasbourg, France
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Fabrication of ITO/p-InP hetero-junction nanowire-array solar cells2013

    • Author(s)
      M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui
    • Organizer
      the 32st Electronic Materials Symposium (EMS-32)
    • Place of Presentation
      Laforet Biwko, Shiga, Japan
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Compound Semiconductor Nanowire Solar Cells2012

    • Author(s)
      Takashi Fukui, Masatoshi Yoshimura, Eiji Nakai and Katsuhiro Tomioka
    • Organizer
      The 16th International Conference on Metal- Organic Vapor Phase Epitaxy (ICMOVPE-XVI),
    • Place of Presentation
      Paradise Hotel Busan(KOREA)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Bi-directional growth of Zn-doped InP nanowires by selective-area MOVPE2012

    • Author(s)
      K. Ikejiri, K. Tomioka, and T. Fukui
    • Organizer
      MRS Spring Meeting
    • Place of Presentation
      San Fransisco's Moscone West Convention Hall(USA)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Compound Semiconductor Nanowire Solar Cells2012

    • Author(s)
      Takashi Fukui, Keitaro Ikejiri, Masatoshi Yoshimura, Eiji Nakai and Katsuhiro Tomioka
    • Organizer
      the 1st International Conference on Emerging Advanced Nanomaterials (ICEAN)
    • Place of Presentation
      The University of Queensland(Australia)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Realization of steep-slope behavior in tunnel FETs using InAs nanowire/Si heterojunction2012

    • Author(s)
      K. Tomioka and T. Fukui
    • Organizer
      MRS spring meeting
    • Place of Presentation
      San Fransisco's Moscone West Convention Hall(USA)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] InGaP Nanowires grown by Selective-Area MOVPE2012

    • Author(s)
      F. Ishizaka, K. Ikejiri, K. Tomioka, and T. Fukui
    • Organizer
      2012 International Conference on Solid State Devices and Materials (SSDM2012),
    • Place of Presentation
      京都国際会議場(京都市)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] GaAs core-shell nanowire array solar cells on masked GaAs (111)B substrates2012

    • Author(s)
      E. Nakai, M. Yoshimura, K. Tomioka, and T. Fukui
    • Organizer
      9th International Workshop on Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS)
    • Place of Presentation
      Eindhoven University of Technology(Netherlands)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] InP/AlInP core-multishell nanowire array solar cells2012

    • Author(s)
      M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui
    • Organizer
      the 39th Internal Symposium on Compound Semiconductor
    • Place of Presentation
      University of Calfornia Santa Barbara(USA)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Compound Semiconductor Nanowire Solar Cells2012

    • Author(s)
      Takashi Fukui, Masatoshi Yoshimura, Takahito Endo, Eiji Nakai and Katsuhiro Tomioka
    • Organizer
      MRS 2012 Fall meeting
    • Place of Presentation
      Haynes Convention Center Boston(USA)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] First demonstration of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction2012

    • Author(s)
      K. Tomioka, M. Yoshimura, and T. Fukui
    • Organizer
      MRS 2012 Fall meeting
    • Place of Presentation
      Haynes Convention Center Boston(USA)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Steep-slope tunnel field-effect transistors using III-V nanowire/Si heterojunction2012

    • Author(s)
      K. Tomioka and T. Fukui
    • Organizer
      IEEE VLSI symposia
    • Place of Presentation
      Hilton Hawaian Village(USA)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Bi-directional growth of InP nanowires by selective-area MOVPE2012

    • Author(s)
      K. Ikejiri, F. Ishizaka, K. Tomioka, and T. Fukui
    • Organizer
      the 1st International Conference on Emerging Advanced Nanomaterials (ICEAN)
    • Place of Presentation
      The University of Queensland(Australia)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Flexible InP nanowire array obtained by epitaxial growth and peeling off process for solar cell application2012

    • Author(s)
      T. Endo, E. Nakai, M. Yoshimura, K. Tomioka and T. Fukui
    • Organizer
      25th International Microprocesses and Nanotechnology Conference (MNC 2012)
    • Place of Presentation
      神戸メリケンパークオリエンタルホテル(神戸市
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] First demonstration of tunnel field-effect transistor using InGaAs/Si junction2012

    • Author(s)
      K. Tomioka, M. Yoshimura, T. Fukui
    • Organizer
      2012 International Conference on Solid State Devices and Materials (SSDM 2012)
    • Place of Presentation
      京都国際会議場(京都市)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] GaAs/InGaP core-multishell nanowire array solar cells by selective-area metal organic vapor phase epitaxy2012

    • Author(s)
      E. Nakai, M. Yoshimura, K. Tomioka, and T.Fukui
    • Organizer
      MRS 2012 Fall meeting
    • Place of Presentation
      Haynes Convention Center Boston(USA)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Selective-area growth of GaAs-InGaP core-multishell nanowires on Si substrate toward solar water splitting devices2012

    • Author(s)
      K. Tomioka, M. Yoshimura, and T. Fukui
    • Organizer
      The 16th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XVI)
    • Place of Presentation
      Paradise Hotel Busan(KOREA)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Integration of III-V nanowires on Si and their applications2012

    • Author(s)
      K. Tomioka, T. Fukui
    • Organizer
      25th International Microprocesses and Nanotechnology Conference (MNC 2012)
    • Place of Presentation
      神戸メリケンパークオリエンタルホテル(神戸市)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V semiconductor nanowires and their electronics and photonic device applications2011

    • Author(s)
      T. Fukui, M. Yoshimura, E. Nakai and K. Tomioka
    • Organizer
      Japan-Sweden QNANO Workshop
    • Place of Presentation
      Clarion Hotel Visby (Sweden)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Vertical In0.7Ga0.3As Nanowire Surrounding-Gate Transistors with High-k Gate Dielectric on Si Substrate2011

    • Author(s)
      K. Tomioka, M, Yoshimura, and T. Fukui
    • Organizer
      2011 IEEE International Electron Devices Meeting
    • Place of Presentation
      Hilton Washington(USA)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Heteroepitaxy of vertical InAs nanowires on thin graphitic films2011

    • Author(s)
      Y. J. Hong and T. Fukui
    • Organizer
      the 2011 International Conference on Solid State Devices and Materials
    • Place of Presentation
      愛知県産業労働センター(名古屋市)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Fabrication and Characterization of GaAs Nanowires on Poly-Si by Selective-Area MOVPE2011

    • Author(s)
      K. Ikejiri, K. Tomioka, S. Imai, and T. Fukui
    • Organizer
      The 38th International Symposium on Compound Semiconductors
    • Place of Presentation
      Maritim pro Arte Hotel, Berlin(Germany)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] GaAs and related III-V nanowires formed by using selective-area metal-organic vapor-phase epitaxy and their applications to optoelectronics2011

    • Author(s)
      K.Hiruma, S.Fujisawa, K.Ikejiri, K.Tomioka, S.Hara, J.Motohisa, T.Fukui
    • Organizer
      473rd Wilhelm and Else Heraeus Seminar on III-V Nanowires : Growth, Properties, and Applications
    • Place of Presentation
      Physikzentrum, Bad Honnef, Germany(招待講演)
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Tunnel field-effect transistor using InAs nanowire/Si heterojunction2011

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Organizer
      The 15th International Symposium on the Physics of Semiconductors and Applications
    • Place of Presentation
      Ramada Plaza JeJu Hotel(Korea)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Fabrication of InP Nanowire Array Solar Cells using Selective-Area Metal-Organic Vapor Phase Epitaxy2011

    • Author(s)
      M. Yoshimura, K. Tomioka, E. Nakai, and T. Fukui
    • Organizer
      JSPS-RSAS Joint Conference “Capturing the Sun”
    • Place of Presentation
      Royal Swedish Academy of Science, Stockholm(Sweden)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Growth of GaAs Nanowires on Poly-Si by Selective-Area MOVPE2011

    • Author(s)
      K. Ikejiri, K. Tomioka, S. Imai, and T. Fukui
    • Organizer
      2011 International Conference on Solid State Devices and Materials
    • Place of Presentation
      愛知県産業労働センター(名古屋市)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Semiconductor nanowires and their photovoltaic applications2011

    • Author(s)
      T. Fukui, M. Yoshimura, and K. Tomioka
    • Organizer
      JSPS-RSAS Joint Conference on Capturing the Sun
    • Place of Presentation
      Royal Swedish Academy of Science, Stockholm(Sweden)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Integration of InGaAs nanowire vertical surrounding-gate transistor on Si2011

    • Author(s)
      Katsuhiro Tomioka, Masatoshi Yoshimura, Takashi Fukui
    • Organizer
      2011 International Conference on Solid State Devices and Materials
    • Place of Presentation
      愛知県産業労働センター(名古屋市)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V Semiconductor Nanowires on Si: Selective Area MOVPE and Their Device Applications2011

    • Author(s)
      Katsuhiro Tomioka, Junichi Motohisa, Shijiroh Hara, Kenji Hiruma, and Takashi Fukui
    • Organizer
      MRS spring meeting
    • Place of Presentation
      San Fransisco's Moscone West Convention Hall(USA)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Fabrication and Optical Property of GaAs Nanowire Array for Solar Cell Applications2011

    • Author(s)
      E. Nakai, M. Yoshimura, K. Tomioka and T. Fukui
    • Organizer
      the 24th International Microprocesses and Nanotechnology Conference
    • Place of Presentation
      ANAホテル(京都市)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Fabrication of Vertical In0.7Ga0.3As Nanowire Surrouding-Gate Transistors with High-k Gate Dielectric on Si Substrate2011

    • Author(s)
      K. Tomioka, M. Yoshimura, T. Fukui
    • Organizer
      24th International Microprocesses and Nanotechnology Conference
    • Place of Presentation
      ANAホテル(京都市)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Integration of InGaAs/InP/InAlAs Core-Multishell Nanowire-Based Surrounding-Gate Transistors on Si Substrate2011

    • Author(s)
      Katsuhiro Tomioka, Masatoshi Yoshimura, and Takashi Fukui
    • Organizer
      MRS 2011 Fall meeting
    • Place of Presentation
      Haynes Convention Center, Boston(USA)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Controlled van der Waals heteroepitaxy of InAs nanowires on carbon honeycomb lattices2011

    • Author(s)
      Y. J. Hong and T. Fukui
    • Organizer
      MRS Fall Meeting
    • Place of Presentation
      Haynes Convention Center, Boston(USA)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Compound-Semiconductor Nanowire Solar Cells2011

    • Author(s)
      T. Fukui, M. Yoshimura, E. Nakai and K. Tomioka
    • Organizer
      9th Topical Workshop on Heterostructure Microelectronics
    • Place of Presentation
      長良川国際会議場(岐阜市)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Fabrication of III-V Nanowire-based Surrounding-Gate Transistors on Si Substrate2011

    • Author(s)
      Katsuhiro Tomioka, Junichi Motohisa, Shinjiroh Hara, Takashi Fukui
    • Organizer
      the 220th Electrochemical Society Meeting
    • Place of Presentation
      Haynes Convention Center, Boston(USA)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Tunnel Field-Effect Transistors using InAs Nanowire/Si Heterojunction2011

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Organizer
      2011 International Conference on Solid State Devices and Materials
    • Place of Presentation
      愛知県産業労働センター(名古屋市)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Integration of InGaAs Nanowires-based vertical surrounding-gate FETs on Si2011

    • Author(s)
      Katsuhiro Tomioka, Masatoshi Yoshimura, Junichi Motohisa, Shinjiroh Hara, and Takashi Fukui
    • Organizer
      The 15th International Symposium on the Physics of Semiconductors and Applications
    • Place of Presentation
      Ramada Plaza JeJu Hotel(Korea)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Mechanism on structural transition of InP nanowires by selective-area MOVPE2011

    • Author(s)
      K. Ikejiri, Y. Kitauchi, K. Tomioka, J. Motohisa, and T. Fukui
    • Organizer
      2011 Materials Research Society Fall Meeting
    • Place of Presentation
      Haynes Convention Center, Boston(USA)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V compound semiconductor nanowires and their electrical and optical applications2011

    • Author(s)
      T. Fukui, M. Yoshimura, E. Nakai and K. Tomioka
    • Organizer
      The 7th International Conference on Advanced Materials and Devices
    • Place of Presentation
      Ramada Plaza JeJu Hotel(Korea)
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Characterization of InP nanowire array solar cells using selective-area metal-organic vapor phase epitaxy2011

    • Author(s)
      M. Yoshimura, E. Nakai, K. Tomioka, and T. Fukui
    • Organizer
      MRS Fall Meeting
    • Place of Presentation
      Haynes Convention Center, Boston(USA)
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Selective-area growth of InGaAs nanowires on Si2010

    • Author(s)
      K.Tomioka, M.Yoshimura, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
    • Organizer
      International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XV)
    • Place of Presentation
      Hyatt Regency, Lake Tahoe, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth and characterization of core-multishell GaAs nanowire array solar cell2010

    • Author(s)
      S.Soundeswaran, K.Tomioka, T.Sato, M.Yoshimura, T.Sato, J.Motohisa, K.Hiruma, T.Fukui
    • Organizer
      International Conference on Nanomaterials
    • Place of Presentation
      Mahatma Gandhi University, Kottayam, Kerala, India
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Fabrication of III-V semiconductor core-shell nanowires by SA-MOVPE and their device applications2010

    • Author(s)
      T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
    • Organizer
      2010 Conference on Optoelectronic and Microelectronic Materials and Devices
    • Place of Presentation
      The Australian National University, Canberra, Australia(招待講演)
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Fabrication and characterization of InAs tubular channel FETs using core-shell nanowires grown by SA-MOVPE2010

    • Author(s)
      T.Sato, J.Motohisa, E.Sano, S.Hara, T.Fukui
    • Organizer
      International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XV)
    • Place of Presentation
      Hyatt Regency, Lake Tahoe, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Heteroepitaxial growth of InGaAs Nanowires formed on GaAs(111)B by Selective-Area MOVPE2010

    • Author(s)
      M.Yoshimura, K.Tomioka, K.Hiruma, S.Hara, J.Motohisa, T.Fukui
    • Organizer
      International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XV)
    • Place of Presentation
      Hyatt Regency, Lake Tahoe, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Selective-area MOVPE growth and optical properties of single InAsP quantum dots embedded in InP NWs2010

    • Author(s)
      Y.Kobayashi, J.Motohisa, K.Tomioka, S.Hara, K.Hiruma, T.Fukui
    • Organizer
      International Conference on InP and Related Materials/International Conference on Compound Semiconductors
    • Place of Presentation
      Takamatsu Symbol Tower, Takamatsu, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth mechanism of III-V semiconductor nanowires in selective-area metalorganic vapor phase epitaxy2010

    • Author(s)
      J.Motohisa, K.Tomioka, S.Hara, K.Hiruma, T.Fukui
    • Organizer
      International Conference on Crystal Growth/International Conference on Vapor Growth and Epitaxy
    • Place of Presentation
      Beijing International Convention Center, Beijing, China(招待講演)
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth mechanism of III-V semiconductor nanowires in selectve-area metalorganic vapor phase epitaxy2010

    • Author(s)
      J.Motohisa, K.Tomioka, S.Hara, K.Hiruma, T.Fukui
    • Organizer
      International Conference on Crystal Growth/International Conference on Vapor Growth and Epitaxy
    • Place of Presentation
      Beijing, China
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth and Characterization of GaAsP Nanowires on GaAs(111)B Substrate by Selective-Area Metal Organic Vapor Phase Epitaxy2010

    • Author(s)
      S.Fujisawa, T.Sato, S.Hara, J.Motohisa, K.Hiruma, T.Fukui
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM 2010)
    • Place of Presentation
      University of Tokyo, Tokyo, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Fabrication of GaAs/InAs axial nanowires on Si by selective-area MOVPE with re-growth method2010

    • Author(s)
      K.Tomioka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
    • Organizer
      International Conference on InP and Related Materials/International Conference on Compound Semiconductors
    • Place of Presentation
      Takamatsu Symbol Tower, Takamatsu, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] III-V semiconductor nanowire formation using catalyst-free MOVPE and applications to optoelectronic devices2010

    • Author(s)
      K.Hiruma, K.Tomioka, S.Hara, J.Motohisa, T.Fukui
    • Organizer
      The 12th Nanowire Research Society Meeting & Nano Korea 2010 Satellite Session
    • Place of Presentation
      KINTEX, Goyang, Korea(招待講演)
    • Year and Date
      2010-08-20
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] III-V semiconductor core-shell nanowires grown by selective-area MOVPE and their device applications2010

    • Author(s)
      T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
    • Organizer
      Material Research Society 2010 Spring Meeting
    • Place of Presentation
      San Francisco, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Fabrication of GaAs/AlGaAs core-multishell nanowire-based light-emitting-diode array on Si substrate2010

    • Author(s)
      K.Tomioka, S.Hara, K.Hiruma, J.Motohisa, T.Fukui
    • Organizer
      SPIE Infrared Remote Sensing and Instrumentation XVIII
    • Place of Presentation
      San Diego Convention Center, San Diego, USA(招待講演)
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Ferromagnetic MnAs nanocluster composites position controlled on GaAs(111)B substrates toward lateral magneto-resistive devices2010

    • Author(s)
      K.Komagata, S.Hara, S.Ito, T.Fukui
    • Organizer
      The 23rd International Microprocesses and Nanotechnology Conference (MNC 2010)
    • Place of Presentation
      Rihga Royal Hotel Kokura, Fukuoka, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Fabrication of III-V Semiconductor Nanowires by SA-MOVPE and their Applications to Photonic and Photovoltaic Devices2010

    • Author(s)
      T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
    • Organizer
      International Conference on InP and Related Materials/International Conference on Compound Semiconductors
    • Place of Presentation
      Takamatsu Symbol Tower, Takamatsu, Japan(招待講演)
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] III-V semiconductor core-shell nanowires grown by selective area MOVPE and their device applications2010

    • Author(s)
      T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
    • Organizer
      Material Research Society (MRS) 2010 Spring Meeting
    • Place of Presentation
      Moscone West and Marriott Hotel, San Francisco, USA(招待講演)
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] III-V Semiconductor Nanowires-from Crystal Growth to Device Applications2010

    • Author(s)
      T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
    • Organizer
      International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XV)
    • Place of Presentation
      Hyatt Regency, Lake Tahoe, USA(招待講演)
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Selective-area growth of InGaAs nanowires on Si(111) substrate2010

    • Author(s)
      K.Tomioka, M.Yoshimura, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
    • Organizer
      Material Research Society (MRS) 2010 Fall Meeting
    • Place of Presentation
      Hynes Convention Center and Sheraton Hotel, Boston, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] III-V semiconductor nanowires and core-shell nanowires and their device applications2010

    • Author(s)
      T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
    • Organizer
      International Conference on Superlattices, Nanostructures and Nanodevices
    • Place of Presentation
      Beijing International Convention Center, Beijing, China(招待講演)
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Integration of III-V NW-based vertical FETs on Si and device concept for tunnel FET using III-V/Si heterojunctions2010

    • Author(s)
      K.Tomioka, J.Motohisa, S.Hara, K.Hiruma, T.Tanaka, T.Fukui
    • Organizer
      Material Research Society (MRS) 2010 Fall Meeting
    • Place of Presentation
      Hynes Convention Center and Sheraton Hotel, Boston, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Catalyst-Free and Position-Controlled Formation of III-V Semiconductor Nanowires for Optical Device applications(Invited)2010

    • Author(s)
      S.Hara, J.Motohisa, K.Tomioka, K.Hiruma, T.Fukui
    • Organizer
      SPIE Photonics West
    • Place of Presentation
      San Francisco, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] GaAs/AlGaAs heterostructure nanowires with a GaAs quantum well formed by selective-area metal organic vapor-phase epitaxy2010

    • Author(s)
      K.Hiruma, A.Hayashida, T.Sato, S.Hara, J.Motohisa, T.Fukui
    • Organizer
      5th Nanowire Growth Workshop 2010
    • Place of Presentation
      CNR Building, Rome, Italy
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Free-Standing GaAs/AlGaAs Heterostructure Nanowires with a GaAs Quantum Well Formed by Selective-Area Metal Organic Vapor-Phase Epitaxy2010

    • Author(s)
      K.Hiruma, A.Hayashida, T.Sato, S.Hara, J.Motohisa, T.Fukui
    • Organizer
      International Conference on Crystal Growth/International Conference on Vapor Growth and Epitaxy
    • Place of Presentation
      Beijing International Convention Center, Beijing, China
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Electrical characterization of InGaAs nanowire MISFETs fabricated by dielectric-first process2010

    • Author(s)
      Y.Kohashi, T.Sato, K.Tomioka, S.Hara, T.Fukui, J.Motohisa
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM 2010)
    • Place of Presentation
      University of Tokyo, Tokyo, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Lasing in GaAs-based Nanowires Grown by Selective-Area MOVPE(Invited)2010

    • Author(s)
      J.Motohisa, B.Hua, K.S.K.Varadwaj, S.Hara, K.Hiruma, T.Fukui
    • Organizer
      IEEE photonics society winter topical 2010
    • Place of Presentation
      Majorca, Spain
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Selective-area growth and characterization of MnAs nanocluster composites for lateral magneto-resistive device applications2010

    • Author(s)
      K.Komagata, S.Hara, S.Ito, T.Fukui
    • Organizer
      Material Research Society (MRS) 2010 Fall Meeting
    • Place of Presentation
      Hynes Convention Center and Sheraton Hotel, Boston, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Vertical Surrounding Gate Field Effect Transistors using InAs Nanowires grown on Si substrates2009

    • Author(s)
      T.Tanaka, K.Tomioka, S.Hara, J.Motohisa, T.Fukui
    • Organizer
      The 2009 Material Research Society(MRS)Fall Meeting
    • Place of Presentation
      Boston, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Fabrication of GaAs/AlGaAs Core-Multishell Nanowire-based Light-Emitting Diode Arrays on Si2009

    • Author(s)
      K.Tomioka, T.Tanaka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
    • Organizer
      International Microprocesses and Nanotechnology Conference(MNC2009)
    • Place of Presentation
      Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth of tubular InAs nanowires for FET applications2009

    • Author(s)
      T.Sato, J.Motohisa, S.Haza, E.Sano, K.Hiruma, T.Fukui
    • Organizer
      4th Nanowire Growth Workshop
    • Place of Presentation
      Paris, France
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] III-V Semiconductor Nanowires Grown and Their Device Applications(Invited)2009

    • Author(s)
      T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
    • Organizer
      The 13th European Workshop on Metal-Organic Vapour Phase Epitaxy(EWMOVPE-XIII)
    • Place of Presentation
      Ulm, Germany
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Structural Transition of InP Nanowires Grown by Selective-Area Metalorganic Vapor Phase Epitaxy2009

    • Author(s)
      Y.Kitauchi, J.Motohisa, K.Tomioka, Y.Kobayashi, T.Fukui
    • Organizer
      The 2009 Material Research Society(MRS)Spring Meeting
    • Place of Presentation
      San Francisco, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Selective-Area Metal-Organic Vapour Phase Epitaxy of Anisotropic-Shaped Ferromagnetic MnAs Nanoclusters for Magneto-Resistive Device Applications2009

    • Author(s)
      S.Hara, S.Ito, T.Wakatsuki, T.Fukui
    • Organizer
      The 13th European Workshop on Metal-Organic Vapour Phase Epitaxy(EWMOVPE-XIII)
    • Place of Presentation
      Ulm, Germany
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Position Controlled Growth of III-V Semiconductor Core-shell Nanowires Grown by Selective Area MOVPE and Their Device Applications(Invited)2009

    • Author(s)
      T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
    • Organizer
      The 2009 Material Reseach Society(MRS)Spring Meeting
    • Place of Presentation
      San Francisco, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Highly Polarized Lasing Emission in Single GaAs/AlGaAs/GaAs core-shell Nanowires2009

    • Author(s)
      S.K.Vazadwaj, J.Motohisa, S.Soundeswaran, T.Sato, B.Hua, M.van Kouwen, V.Zwiller, S.Haza, T.Fukui
    • Organizer
      The 3rd International Conference on One-dimensional Nanomaterials
    • Place of Presentation
      Atlanta, U.S.A.
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Structural Characterizations of Ferromagnetic MnAs Nanoclusters on Si(111)Substrate by Selective-Area MOVPE2009

    • Author(s)
      K.Morita, S.Hara, S.Ito, T.Fukui
    • Organizer
      International Microprocesses and Nanotechnology Conference(MNC2009)
    • Place of Presentation
      Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Fabrication and electrical characterization of InAs tubular channel nanowire FETs2009

    • Author(s)
      T.Sato, J.Motohisa, S.Hara, E.Sano, T.Fukui
    • Organizer
      International Symposium on Advanced Nanostructures and Nano-Devices
    • Place of Presentation
      Hawaii, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Heterepitaxy of III-V nanowires on Si and optical application2009

    • Author(s)
      K.Tomioka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
    • Organizer
      Intemational Workshop on Photons and Spins in Nanostructures(IWPSN)
    • Place of Presentation
      Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Analysis of the twin defects occurring in GaAs nanowires grown by selective-area metal-organic Vapor phase epitaxy2009

    • Author(s)
      H. Yoshida, T. Sato, S. Hara, K. Hiruma, J. Motohisa and T. Fukui
    • Organizer
      The 5th International Symposium on Surface Science and Nanotechnology
    • Place of Presentation
      Tokyo, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Fabrication of Axial Heterostructures in III-V Nanowires by Selective-area MOVPE with Regrowth Method2009

    • Author(s)
      K.Tomioka, Y.Kobayashi, J.Motohisa, S.Hara, T.Fukui
    • Organizer
      The 2009 Material Research Society(MRS)Spring Meeting
    • Place of Presentation
      San Francisco, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] III-V semiconductor nanowires : From growth to device applications(Invited)2009

    • Author(s)
      T.Fukui, K.Tomioka, S.Hara, K.Hiruma, J.Motohisa
    • Organizer
      International Microprocesses and Nanoteclmology Conference(MNC2009)
    • Place of Presentation
      Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] InAs Nanowire Vertical Surrounding Gate FET on Si Substrate2009

    • Author(s)
      T.Tanaka, K.Tomioka, S.Hara, J.Motohisa, T.Fukui
    • Organizer
      2009 International Conference on Solid State Devices and Materials(SSDM2009)
    • Place of Presentation
      Sendai, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Magnetic Anisotropy in Position-Controllable MnAs Nanoclusters on Semiconductor Substrates by Selective-Area Metal-Orgmic Vapor Phase Epitaxy2009

    • Author(s)
      S.Hara, S.Ito, T.Wakatsuki, T.Fukui
    • Organizer
      The 18th International Conference on Magnetism(ICM2009)
    • Place of Presentation
      Karlsruhe, Germany
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Position controlled growth and optical properties of III-V semiconductor core-shell nanowires grown by selective-area MOVPE and their device applications2009

    • Author(s)
      J. Motohisa, K. Tomioka, S. Hara, K. Hiruma and T. Fukui
    • Organizer
      The SPIE Photonics West Conferences 2009
    • Place of Presentation
      San Jose, California, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Fabrication of GaAs/AlGaAs Core-Multishell Nanowire-based Light-Emitting Diode Arrays on Si2009

    • Author(s)
      K.Tomioka, T.Tanaka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
    • Organizer
      The 2009 Material Research Society(MRS)Fall Meeting
    • Place of Presentation
      Boston, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth and Characterization of InGaAs Nanowires formed on GaAs(111)B by Selecrive-Area MOVPE2009

    • Author(s)
      M.Yoshimura, K.Tomioka, K.Hiruma, S.Hara, J.Motohisa, T.Fukui
    • Organizer
      2009 International Conference on Solid State Devices and Materials(SSDM2009)
    • Place of Presentation
      Sendai, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth of nanowires by selective-area metalorganic vapor phase epitaxy and their applications(Invited)2009

    • Author(s)
      J.Motohisa, S.Hara, K.Hiruma, T.Fukui
    • Organizer
      The XV International Workshop on the Physics of Semiconductor Devices
    • Place of Presentation
      New Delhi, India
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Fabrication of a GaAs quantum well embedded in AlGaAs/GaAs hetero-structure nanowires by selective-area MOVPE2009

    • Author(s)
      A.Hayashida, T.Sato, S.Hara, J.Motohisa, K.Hiruma, T.Fukui
    • Organizer
      4th Nanowire Growth Workshop
    • Place of Presentation
      Paris, France
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Structural transition of InP nanowires in selective-area metalorganic vapor phase epitaxy2009

    • Author(s)
      Y.Kitauchi, K.Tomioka, Y.Kobayashi, S.Hara, T.Fukui, J.Motohisa
    • Organizer
      the 14th International Conference on Modulated Semiconductor Structures(MSS-14)
    • Place of Presentation
      Kobe, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core-shell nanowires on Si(111)substrate2009

    • Author(s)
      K.Tomioka, T.Tanaka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
    • Organizer
      The 3rd International Conference on One-dimensional Nanomaterials
    • Place of Presentation
      Atlanta, U.S.A.
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Analysis of twin development during selective growth of GaAs nanowires by using catalyst-free metal organic vapor-phase epitaxy2009

    • Author(s)
      K.Hiruma, H.Yoshida, K.Ikejiri, T.Sato, S.Hara, J.Motohisa, T.Fukui
    • Organizer
      4th Nanowire Growth Workshop
    • Place of Presentation
      Paris, France
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth of p/n-doped GaAs-AlGaAs Core-multi-shell Nanowire Array on Si(111)by Selective-area MOVPE2009

    • Author(s)
      K.Tomioka, Y.Kobayashi, T.Tanaka, J.Motohisa, S.Hara, K.Hiruma, T.Fukui
    • Organizer
      The 2009 Material Research Society(MRS)Spring Meeting
    • Place of Presentation
      San Francisco, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Catalyst-free growth and FET application of (InGa)As nanowires2008

    • Author(s)
      J. Noborisaka, T. Sato, J. Motohisa, K. Tomioka, S. Hara and T. Fukui
    • Organizer
      The 66th Device Research Conference
    • Place of Presentation
      Santa Barbara, California, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Position-controlled growth of GaAs nanowires on Si(111) by selective-area metal-organic vapor phase epitaxy2008

    • Author(s)
      K. Tomioka, Y. Kobayashi, J. Motohisa, S. Hara and T. Fukui
    • Organizer
      The 14th International Conference on Metal-Organic Vapor Phase Epitaxy
    • Place of Presentation
      Metz, France
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Structural and magnetic characterizations of Ferromagnetic MnAs/GaAs nanoclusters formed by selective-area MOVPE2008

    • Author(s)
      S. Hara, T. Wakatsuki, S. Ito, D. Kawamura and T. Fukui
    • Organizer
      The 14th International Conference on Metal-organic Vapor Phase Epitaxy
    • Place of Presentation
      Metz, France
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth of III-V Semiconductor Nanowires2008

    • Author(s)
      T. Fukui, S. Hara and J. Motohisa
    • Organizer
      The 29th International Conference on the Physics of Semiconductors
    • Place of Presentation
      Rio de Janeiro, Brazil
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Near-Infrared lasers in GaAs/GaAsP coaxial core-shell nanowires2008

    • Author(s)
      B. Hua, J. Motohisa, S. Hara and T. Fukui
    • Organizer
      2008 MRS Fall Meeting
    • Place of Presentation
      Boston, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Selective-area MOVPE of InP/InGaAs air-hole arrays on InP for photonic crystal applications2008

    • Author(s)
      J. Motohisa, S. Hashimoto, J. Takeda, A. Tarumi, S. Hara and T. Fukui
    • Organizer
      The 14th International Conference on Metal-Organic Vapor Phase Epitaxy
    • Place of Presentation
      Metz, France
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth direction control and magnetic characterizations of MnAs grown by selective-area metal-organic vapor phase epitaxy2008

    • Author(s)
      T. Wakatsuki, S. Hara, S. Ito and T. Fukui
    • Organizer
      The 2008 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Tsukuba, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Selective-area growth of InGaAs nanowires and their photoluminescence characterization2008

    • Author(s)
      T. Sato, Y. Kobayashi, J. Motohisa and T. Fukui
    • Organizer
      The 27 th Electronic Materials Symposium
    • Place of Presentation
      Izu, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Magnetic domain characterization of MnAs nanoclusters on GaAs(111)B surfaces by selective-area MOVPE2008

    • Author(s)
      S. Ito, S. Hara, T. Wakatsuki and T. Fukui
    • Organizer
      The 21 st International Microprocesses and Nanotechnology Conference
    • Place of Presentation
      Fukuoka, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Fabrication and optical characterization of InGaAs nanowires by selective-area MOVPE2008

    • Author(s)
      T. Sato, Y. Kobayashi, J. Motohisa, S. Hara and T. Fukui
    • Organizer
      The 14th International Conference on Metal-Organic Vapor Phase Epitaxy
    • Place of Presentation
      Metz, France
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth of III-V semiconductor nanowires2008

    • Author(s)
      T. Fukui, S. Hara and J. Motohisa
    • Organizer
      The 29th International Conference on the Physics of Semiconductors
    • Place of Presentation
      Rio de Janeiro, Brazil
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Epitaxial III-V semiconductors : nanowires and nanotubes2008

    • Author(s)
      T. Fukui, S. Hara and J. Motohisa
    • Organizer
      The 4th Asian Confrence on Crystal Growth and Crystal Technology
    • Place of Presentation
      Sendai, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth and Optical Properties of InP/InAs Multi-Core Shell Nanowires Grown by Selective-Area MOVPE2008

    • Author(s)
      T. Fukui, S. Hara, J. Motohisa
    • Organizer
      2008 Material Research Society(MRS)Spring Meeting
    • Place of Presentation
      San Francisco,USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] III-V semiconductor epitaxial nanowires and their applications2008

    • Author(s)
      T. Fukui, S. Hara, K. Hiruma and J. Motohisa
    • Organizer
      The 16 th Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
    • Place of Presentation
      Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Endotaxial nanoclustering of MnAs in lattice-mismatched semiconductor layers during metal-organic vapor phase epitaxy2008

    • Author(s)
      S. Hara, H. Iguchi and T. Fukui
    • Organizer
      The 2008 International Conference on Electronic Materials
    • Place of Presentation
      Sydney, Australia
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth mechanism of GaAs nanowires using catalyst-free selective-area metal-organic vapor phase epitaxy2008

    • Author(s)
      K. Hiruma, T. Sato, H. Yoshida, S. Hara, J. Motohisa and T. Fukui
    • Organizer
      2008 MRS Fall Meeting
    • Place of Presentation
      Boston, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Vertical III-V nanowire growth on Si substrate by selective-area MOVPE2008

    • Author(s)
      K. Tomioka, Y. Kobayashi, J. Motohisa, S. Hara and T. Fukui
    • Organizer
      2008 MRS Fall Meeting
    • Place of Presentation
      Boston, USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Competitive growth process of tetrahedrons and hexagons during nanowire formation by metal-organic vapor phase epitaxy2008

    • Author(s)
      K. Hiruma, K. Ikejiri, T. Sato, H. Yoshida, S. Hara, J. Motohisa and T. Fukui
    • Organizer
      The third International Workshop on Nanowire Growth Mechanisms
    • Place of Presentation
      Duisburg, Germany
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] InP and InP/InAs multi-core shell nanowires grown by selective area MOVPE2007

    • Author(s)
      T. Fukui, Premila. Mohan, J. Motohisa
    • Organizer
      International Conference on Modulated Semiconductor Structures
    • Place of Presentation
      Genova,Italy
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] III-V Semiconductor Nanowires and Their Device Applications2007

    • Author(s)
      S. Hara, J. Motohisa, T.Fukui
    • Organizer
      The 2007 International Symposium on Advanced Silicon-Based Nano-Devices(ISASN 2007)
    • Place of Presentation
      Tokyo,Japan
    • Year and Date
      2007-11-09
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth Characteristics of III-V Semiconductor Nanowires2007

    • Author(s)
      K. Hiruma, S. Hara, J. Motohisa, Takasi Fukui
    • Organizer
      The Second International Conference on One-dimensional Nanomaterials(ICON 2007)
    • Place of Presentation
      Malmo,Sweden
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Formation and characterization of Fabry-Perot cavities in single GaAs nanowires2007

    • Author(s)
      B. Hua, J. motohisa, S. hara, T. Fukui
    • Organizer
      The 34th international conference on compound semiconductors
    • Place of Presentation
      Kyoto,Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] III-V semiconductor hetero-structure nanowires by selective area MOVPE2007

    • Author(s)
      T. Fukui, S. Hara, J. Motohisa
    • Organizer
      2007 International Conference on Solid State Devices and Materials(SSDM 2007)
    • Place of Presentation
      Tsukuba,Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] III-V semiconductor nanowires and nanotubes grown by slective area metalorganic vapor phase epitaxy2007

    • Author(s)
      J. Motohisa, T. Fukui, S. Hara
    • Organizer
      Internationl Conference on Nano Science and Technology(ICN+T 2007)
    • Place of Presentation
      Stockholm,Sweden
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Growth of InGaAs nanowires on InP(111)B substrates by selective-area MOVPE2007

    • Author(s)
      T. Sato, J. Noborisaka, J. Motohisa, S. Hara, T. Fukui
    • Organizer
      The US Biennial Workshop on Organometallic Vapor Phase Epitaxy
    • Place of Presentation
      Salt Lake,USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] InP/InAs core-multishell heterostructure nanowires grown by metalorganic vapor phase epitaxy2007

    • Author(s)
      T. Fukui, P. Mohan, J. Motohisa
    • Organizer
      19th International Conference on Indium Phosphide and Related Materials
    • Place of Presentation
      Matsue,Japan
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] III-V compound semiconductor nanowires grown by selective area MOVPE2007

    • Author(s)
      T. Fukui, S. Hara, J. Motohisa
    • Organizer
      2nd International Lund Workshop on Nanowire Growth Mechanisms
    • Place of Presentation
      Lund,Sweden
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] InP/InAs core-shell nanowires grown by selective area MOVPE2007

    • Author(s)
      T. Fukui, S. Hara, J. Motohisa
    • Organizer
      7th Wilhelm and Else Heraeus Seminar on Semiconducting Nanowires: Physics, Materials and Devices
    • Place of Presentation
      Bad Honnef,German
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Position-controlled Heteroepitaxial Growth of InAs Nanowires on Lattice-mismatched Substrates by Selective Area Metalorganic Vapor Phase Epitaxy2007

    • Author(s)
      K. Tomioka, J. Takeda, L. Yang, J. Motohisa, S. Hara, T. Fukui
    • Organizer
      2007 MRS Spring Meeting
    • Place of Presentation
      San Francisco,USA
    • Data Source
      KAKENHI-PROJECT-18002003
  • [Presentation] Integration of Vertical InAs Nanowires on Ge(111) by Selective-Area MOVPE

    • Author(s)
      Katsuhiro Tomioka, Fumiya Ishizaka, Eiji Nakai, Takashi Fukui
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM2014)
    • Place of Presentation
      Tsukuba Conference Center, Tsukuba
    • Year and Date
      2014-09-08 – 2014-09-11
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Selective-Area Growth of III-V Nanowires and Their Devices

    • Author(s)
      Katsuhiro Tomioka, Fumiya Ishizaka, Eiji Nakai, Muyi Chen, Takashi Fukui
    • Organizer
      MRS fall meeting 2014
    • Place of Presentation
      Hynes Convention Center, Boston, USA
    • Year and Date
      2014-11-30 – 2014-12-05
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Selective-area growth of wurtzite InP/AlGaP core-shell nanowires

    • Author(s)
      J. Ishizaka, Y. Hiraya, K. Tomioka, and T. Fukui
    • Organizer
      17th International Conference on Metalorganic Vapor Phase Epitaxy
    • Place of Presentation
      EPFL, Lausanne, Switzerland
    • Year and Date
      2014-07-13 – 2014-07-18
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Vertical Tunnel FETs Using III-V Nanowire/Si Heterojunctions

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Organizer
      225th ECS meeting
    • Place of Presentation
      Hilton Bonnet Creek、Orland, USA
    • Year and Date
      2014-05-12 – 2014-05-13
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Vertically aligned semiconductor nanowires and their applications

    • Author(s)
      T. Fukui, E. Nakai, F. Ishizaka and K. Tomioka
    • Organizer
      42nd Conference on the Physics and Chemistry of Surfaces and Interfaces
    • Place of Presentation
      Snowbird Resort, Utah, USA
    • Year and Date
      2015-01-18 – 2015-01-22
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V Semiconductor nanowires and their photovoltaic applications

    • Author(s)
      T. Fukui, E. Nakai, F. Ishizaka and K. Tomioka
    • Organizer
      3rd biennial Conference of the Combined Australian Materials Societies
    • Place of Presentation
      University of Australia, Sydoney, Australia
    • Year and Date
      2014-11-26 – 2014-11-28
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] InGaAs axial junction nanowire array solar cells with Sn-doped contact layer

    • Author(s)
      E. Nakai, M. Yoshimura, K. Tomioka, and T. Fukui
    • Organizer
      17th International Conference on Metalorganic Vapor Phase Epitaxy
    • Place of Presentation
      EPFL, Lausanne, Switzerland
    • Year and Date
      2014-07-13 – 2014-07-18
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Selective-area growth of vertical InAs nanowires on Ge(111)

    • Author(s)
      Katsuhiro Tomioka, Fumiya Ishizaka, Eiji Nakai, Takashi Fukui
    • Organizer
      17thInternational Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XVII)
    • Place of Presentation
      EPFL, Lausanne, Switzerland
    • Year and Date
      2014-07-13 – 2014-07-18
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V semiconductor hetero-structure nanowires and their photonic applications

    • Author(s)
      K. Tomioka, E. Nakai, F. Ishizaka and T. Fukui
    • Organizer
      WE Heraeus Seminar on III-V Nanowire Photonics
    • Place of Presentation
      Physikzentrum Bad Honnef, Bad Honnef , Germany
    • Year and Date
      2015-03-22 – 2015-03-25
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Selective-area growth of InAs nanowire inside Si(100) and SOI substrates toward tunnel FET applications

    • Author(s)
      K. Tomioka, F. Ishizaka, and T. Fukui
    • Organizer
      the 17th International Conference on Metal Organic Vapor Phase Epitaxy
    • Place of Presentation
      EPFL, Lausanne, Switzerland
    • Year and Date
      2014-07-13 – 2014-07-18
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V nanowires on patterned Si substrates and their applications

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Organizer
      10th International Workshop on Epitaxial Semiconductor on Patterned Substrates and Novel Index Surfaces (ESPS-NIS 2014)
    • Place of Presentation
      Trunseo International Academy, Traunkirchen,Austria
    • Year and Date
      2015-07-20 – 2015-07-23
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V nanowire channel and III-V/Si heterojunction for low-power switches

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Organizer
      IEEE EUROSOI-ULIS 2015
    • Place of Presentation
      Aula Prodi Piazza San Gionvanni in Monte, Bologna, Italy
    • Year and Date
      2014-07-26 – 2014-07-28
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Selective-area growth of III-V nanowires on Si and their applications

    • Author(s)
      Katsuhiro Tomioka and Takashi Fukui
    • Organizer
      8th Nanowire Growth Workshop/Nanowire 2014
    • Place of Presentation
      Strijp-S Eindhoven, Eindhoven, Germany
    • Year and Date
      2015-08-25 – 2015-08-29
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] III-V Compound Semiconductor Nanowire Solar Cells

    • Author(s)
      Takashi Fukui1, Eiji Nakai1, MuYi Chen1 and Katsuhiro Tomioka
    • Organizer
      Topical Meetings on Optical Nanostructures and Advanced Materials for Photovoltaics (PV)
    • Place of Presentation
      Australian National University, Canberra, Australia
    • Year and Date
      2014-12-02 – 2014-12-04
    • Invited
    • Data Source
      KAKENHI-PROJECT-23221007
  • [Presentation] Wurtzite InP/AlGaP Core-Shell Nanowires toward Direct Band Gap Transition

    • Author(s)
      F. Ishizaka, K. Tomioka, and T. Fukui
    • Organizer
      MRS Spring Meeting 2014
    • Place of Presentation
      Moscone West, San Francisco, California, USA
    • Year and Date
      2014-04-21 – 2014-04-25
    • Data Source
      KAKENHI-PROJECT-23221007
  • 1.  MOTOHISA Junichi (60212263)
    # of Collaborated Projects: 10 results
    # of Collaborated Products: 128 results
  • 2.  HASEGAWA Hideki (60001781)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 0 results
  • 3.  AMEMIYA Yoshihito (80250489)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 0 results
  • 4.  HARA Shinjiro (50374616)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 109 results
  • 5.  AKAZAWA Masamichi (30212400)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 6.  HASHIZUME Tamotsu (80149898)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 7.  FUJIKURA Hajime (70271640)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 8.  KASAI Seiya (30312383)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 9.  ASAI Tetsuya (00312380)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 10.  大野 英男 (00152215)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 11.  中原 純一郎 (30013527)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 12.  TOMIOKA KATSUHIRO (60519411)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 106 results
  • 13.  SAITOH Toshiya (70241396)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 14.  KAWABE Mitsuo (80029446)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 15.  OURA Kenjiro (60029288)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 16.  YAO Takafumi (60230182)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 17.  AOYAGI Yoshinobu (70087469)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 18.  ARAI Shigehisa (30151137)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 19.  SANO Eiichi (10333650)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 20.  YANG Lin (60374708)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 4 results
  • 21.  SATO Taketomo (50343009)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 22.  HIROSE Tetsuya (70396315)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 23.  中島 尚男 (20198071)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 24.  浅田 雅洋 (30167887)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 25.  冷水 佐壽 (50201728)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 26.  長田 俊人 (00192526)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 27.  小間 篤 (00010950)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 28.  白木 靖寛 (00206286)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 29.  SAKAI Takamasa
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 30.  プリミーラ モハン
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 31.  HONG YoungJoon
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 4 results
  • 32.  OTSUKA Paul
    # of Collaborated Projects: 0 results
    # of Collaborated Products: 3 results

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