WANG Jifeng 王吉豊

Researcher Number	30271977
Affiliation (based on the past Project Information) *help	2007: Institute of Multidisciplinary Research for Advanced Materials, 多元物質科学研究所, Associate Professor 2002 – 2006: 東北大学, 多元物質科学研究所, 助手
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials Except Principal Investigator Metal making engineering / Metal making engineering
Keywords	Principal Investigator Ohmic contact / annealing / intrinsic defect / carrier concentration / p-ZnSe / Bridgman method / ストイキオメトリ / アクセプター / p型 / Bridgman法 … More / ZnSe単結晶 / フォトルミネッセンス / 化学量論組成 / p型結晶 / ZnSe:Sb単結晶 / p型Znse単結晶 / オーミックコンタクト / アニール / 固有欠陥 / キャリア濃度 / p型ZnSe単結晶 / 垂直ブリッジマン法 … More Except Principal Investigator Oxidation / Thin Film / Copper / Hafnium / Zirconium / 誘電特性 / 酸化 / 薄膜 / 銅 / ハフニウム / ジルコニウム / high purity iron / high quality single crystal / Si substrate / hydrogen terminate / molecular beam epitaxy / chemical vapor transport / β-FeSi_2 / β-FeSi_2単結晶 / フォトルミネッセンス / 化学気相輸送法 / 成長機構 / 電気特性 / β-FeSi2単結晶 / 半導体用超高純度鉄 / 超高純度鉄 / 高品位単結晶 / Si基板 / 水素終端処理 / 分子線エピタキシー / 化学気相輸送 / β-FeSi2 Less

Low Temperature Oxidation of Ultra-High Purity Metals and Stoichiometry Control of Oxide Films
- Principal Investigator
  
  ISSHIKI Minoru
- Project Period (FY)
  2005 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Metal making engineering
- Research Institution
  Tohoku University
Single Crystal Growth and Stoichiometory Control of Ecologically Friendly Semiconductor β-FeSi_2
- Principal Investigator
  
  ISSHIKI Minoru
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Metal making engineering
- Research Institution
  Tohoku University
The preparation of low-resistive p-ZnSe by closed Bridgman methodPrincipal Investigator
- Principal Investigator
  
  WANG J.F.
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOHOKU UNIVERSITY

All 2005 2004 2002

All Journal Article Book

[Book] Crystal Growth of Wide-gap II-VIs. Bulk Crystal Growth of Electronic, Optical and Optoelectronic materials in Bulk crystal growth of electronic, optical and optoelectrinic materials2005
- Author(s)
  J.F.Wang et al
- Total Pages
  31
- Publisher
  Edited by Peter Capper. Published by John Wiley & Sons, Ltd.
- Data Source
  KAKENHI-PROJECT-14550286
[Journal Article] Effect of annealing in N_2 atmosphere on net acceptor concentration in ZnSe:N grown by MOCVD2004
- Author(s)
  J.F.Wang, et al.
- Journal Title
  
  Current Applied Physics 4
  
  Pages: 630-632
- Data Source
  KAKENHI-PROJECT-14550286
[Journal Article] Growth of β-FeSi_2 single crystals by chemical vapor transport method2004
- Author(s)
  J.F.Wang, et al.
- Journal Title
  
  Phys.Stat.Sol(a) 201
  
  Pages: 2905-2909
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14350394
[Journal Article] Grown of β-FeSi_2 single crystals by chemical vapor transport method2004
- Author(s)
  J.F.Wang, et al.
- Journal Title
  
  Phys.Stat.Sol(a) 201
  
  Pages: 2905-2909
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14350394
[Journal Article] Vertical Bridgman growth and annealing effect of Bi doped ZnSe single crystal2004
- Author(s)
  J.F.Wang, et al.
- Journal Title
  
  Phys.Stat.Sol.(c) 1
  
  Pages: 2495-2499
- Data Source
  KAKENHI-PROJECT-14550286
[Journal Article] Activation of nitrogen acceptor in ZnSe homo-epilayer grown by MOCVD2002
- Author(s)
  J.F.WANG, et al.
- Journal Title
  
  Phys.stat.Sol.(a) 193・2
  
  Pages: 251-256
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14550286
[Journal Article] Activation of nitrogen acceptor in ZnSe homo-epilayer grown by MOCVD2002
- Author(s)
  J.F.WANG, et al.
- Journal Title
  
  Phys.Stat.Sol.(a) 193(2)
  
  Pages: 251-256
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14550286

1. ISSHIKI Minoru (20111247)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
2. MIMURA Kouji (00091752)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results

WANG Jifeng 王 吉豊

Research Projects

Research Products

Co-Researchers

Low Temperature Oxidation of Ultra-High Purity Metals and Stoichiometry Control of Oxide Films

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Single Crystal Growth and Stoichiometory Control of Ecologically Friendly Semiconductor β-FeSi_2

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

The preparation of low-resistive p-ZnSe by closed Bridgman methodPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Book] Crystal Growth of Wide-gap II-VIs. Bulk Crystal Growth of Electronic, Optical and Optoelectronic materials in Bulk crystal growth of electronic, optical and optoelectrinic materials2005

Author(s)

Total Pages

Publisher

Data Source

[Journal Article] Effect of annealing in N_2 atmosphere on net acceptor concentration in ZnSe:N grown by MOCVD2004

Author(s)

Journal Title

Data Source

[Journal Article] Growth of β-FeSi_2 single crystals by chemical vapor transport method2004

Author(s)

Journal Title

Description

Data Source

[Journal Article] Grown of β-FeSi_2 single crystals by chemical vapor transport method2004

Author(s)

Journal Title

Description

Data Source

[Journal Article] Vertical Bridgman growth and annealing effect of Bi doped ZnSe single crystal2004

Author(s)

Journal Title

Data Source

[Journal Article] Activation of nitrogen acceptor in ZnSe homo-epilayer grown by MOCVD2002

Author(s)

Journal Title

Description

Data Source

[Journal Article] Activation of nitrogen acceptor in ZnSe homo-epilayer grown by MOCVD2002

Author(s)

Journal Title

Description

Data Source

WANG Jifeng 王吉豊