SAKURABA Masao 櫻庭政夫

… Alternative Names

桜庭政夫サクラバマサオ

櫻場政夫サクラバマサオ

Less

Researcher Number	30271993
Other IDs
External Links
Affiliation (Current)	2025: 東北大学, 電気通信研究所, 准教授
Affiliation (based on the past Project Information) *help	2022 – 2024: 東北大学, 電気通信研究所, 准教授 2011 – 2019: 東北大学, 電気通信研究所, 准教授 2007 – 2009: Tohoku University, 電気通信研究所, 准教授 2002 – 2006: Research Institute of Electrical Communication, Associate Professor, 電気通信研究所, 助教授 1996 – 2001: 東北大学, 電気通信研究所, 助手
Review Section/Research Field	Principal Investigator Applied materials science/Crystal engineering / Basic Section 30010:Crystal engineering-related / Medium-sized Section 28:Nano/micro science and related fields / Applied materials science/Crystal engineering / Science and Engineering Except Principal Investigator Electronic materials/Electric materials / Electronic materials/Electric materials / Science and Engineering / Applied materials science/Crystal engineering / Basic Section 61040:Soft computing-related … More / Crystal engineering / 電子デバイス・機器工学 / Applied materials science/Crystal engineering / Electron device/Electronic equipment Less
Keywords	Principal Investigator エピタキシャル成長 / Si / ヘテロ構造 / IV族半導体 / CVD / Ge / N / C / 室温動作 / 量子デバイス … More / 原子層制御 / プラズマ / 界面構造制御 / パワーＭＯＳＦＥＴ / 半導体ヘテロ構造 / ４H－ＳｉＣ / ３Ｃ－ＳｉＣ / シリコン / ラマン散乱分光 / 選択エッチング / ヘテロエピタキシャル薄膜 / 5員環 / 表面再配列 / ペンタシリセン / resonant tunneling / quantum effect / electronic-band modulation / atomic-layer control / group-IV semiconductor / 局所歪 / 量子トンネル構造 / 共鳴トンネル / 量子効果 / 電子帯変調 / heterostructure / resonant tunneling diode / atomic layer / テヘロ構造 / 共鳴トンネルダイオード / 原子層 / ドーピング / SiGe混晶 / 化学気相成長 / 量子ヘテロ構造 / 量子へテロ構造 … More Except Principal Investigator IV族半導体 / SiGeC / SiGe / 原子層エッチング / 原子層成長 / MOS / 極微細デバイス / CVD / ゲルマニウム / ドーピング / 水素終端 / B / P / HBT / 光素子 / 電子デバイス / 量子ドット / 結晶成長 / 機能融合 / カーボン / 人工結晶 / 原子層積層 / ヘテロ構造 / 電子デバイス・機器 / 半導体超微細化 / マイクロ・ナノデバイス / 原子層 / シリコン / 低温ヘテロエピタキシャル成長 / ラングミュア吸着・反応 / 表面水素終端 / ラングミュア吸着 / 一原子層熱窒化 / リザバーコンピューティング / デジアナ混在CMOS回路 / スパイキングニューラルネットワーク / エッジコンピューティング / 自己組織化 / 3-dimensional structure / epitaxial growth / chemical vapor deposition / artificial crystal / atomic layer growth / heterostructure / group-IV semiconductor / MBE / 立体加工 / エピタキシャル成長 / contact resistance / atomic layer / impurity doping / IV group semiconductor / CDV / IV族半導体結晶 / 半導体接触抵抗 / 金属 / 不純物ドーピング / High Selective Anisotropic Etching / Impurity Diffusion / in-situ Impurity Doping / CVD Low-Temperature Selective Growth / 高選択異方性エッチング / 不純物拡散 / in-situ不純物ドーピング / CVD低温選択成長 / Low-Temperature Heteroepitaxial Growth / Hydrogen Termination / Impurity Doping / Atomic-Layer Etching / Atomic-Layer Growth / Ultrasmall Devices / Group IV Semiconductor / Langmuir-type Adsorption and Reaction / 表面処理 / コミュニケーション / 自己組織 / ドット / 緩和 / サーファクタント / 原子層ドーピング / 化学気相成長(CVD) / チャージポンピング法 / ヘテロ界面 / 雑音 / 界面準位 / 揺らぎ / 表面・界面物性 / ヘテロデバイス / ラングミュア型 / ボロン / リン / エピタキシャル / 初期酸化 / リン吸着デジタル制御 / 自己触媒 / 島状成長 / 電界効果トランジスタ / 変調ドーピング / 低温Si層 / CMP / 発光ダイオード / 電界効果型トランジス / 電界効果型トランジスタ / 光物性 / 電子物性 / 光エレクトロニクス / シリコンゲルマニウム / 人工IV族半導体 / XPS / 高清浄雰囲気 / 表面吸着・反応 / Arイオン照射 / 励起水素 / Si窒化膜 / ECRプラズマ / WF_6 / SiH_4 / ド-ピング / タングステン / W低温選択成長 / W低温選択的成長 Less

３Ｃ／４Ｈヘテロエピ基板を用いた高信頼・高移動度ＳｉＣパワーＭＯＳＦＥＴ製作Principal Investigator
- Principal Investigator
  
  櫻庭政夫
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Tohoku University
エッジ応用に向けた超低消費電力スパイキングニューラルネットワークハードウェア
- Principal Investigator
  
  佐藤茂雄
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 61040:Soft computing-related
- Research Institution
  Tohoku University
Experimental Study of Crystal Structure Transformation by Low-Energy Plasma Induced Reconstruction in Si Ultrathin FilmPrincipal Investigator
- Principal Investigator
  
  Sakuraba Masao
- Project Period (FY)
  2018 – 2019
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 28:Nano/micro science and related fields
- Research Institution
  Tohoku University
Selective Formation of Relaxed Ge Thin Film and Quantum Dot by Sub-Monolayer Carbon Mediation
- Principal Investigator
  
  Washio Katsuyoshi
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Crystal engineering
- Research Institution
  Tohoku University
Formation of relaxed Ge thin films by surfactant mediation and its application to devices
- Principal Investigator
  
  WASHIO KATSUYOSHI
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
Process development for high-performance highly-strained quantum-heterostructure resonant-tunneling devices of group-IV semiconductorsPrincipal Investigator
- Principal Investigator
  
  SAKURABA Masao
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
Creation of High-Carrier-Concentration and High-Mobility Artificial Crystal of Group IV Semiconductors by Atomically Controlled CVD Processing
- Principal Investigator
  
  MUROTA Junichi
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Group IV Semiconductor Quantum Device Fabrication for Room Temperature OperationPrincipal Investigator
- Principal Investigator
  
  SAKURABA Masao
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
Development of Atomically Controlled Plasma Processing for GroupIV Quantum Device FabricationPrincipal Investigator
- Principal Investigator
  
  SAKURABA Masao
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Tohoku University
Fluctuations in Interface Properties and Noise in Nano-Scaled Devices
- Principal Investigator
  
  TSUCHIYA Toshiaki
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Shimane University
Pioneer study on hetero-interfaces to realize non-classical nano-hetero-devices
- Principal Investigator
  
  TSUCHIYA Toshiaki
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Shimane University
Electronicband modulation and formation of quantum tunneling structures by atomic-layer control of group-IV semiconductorsPrincipal Investigator
- Principal Investigator
  
  SAKURABA Masao
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
Creation of Artificial Crystal with Atomically-Controlled Group-IV Semiconductor Heterostructures
- Principal Investigator
  
  MUROTA Junichi
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Formation of Very Low Contact Resistance between Metal and Semiconductor using Semiconductor Structures with Ultra High Carrier Concentration
- Principal Investigator
  
  MUROTA Junichi
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
Fabrication of Resonant Tunneling Diode by Atomic Layer-by-Layer Epitaxial Growth of Si-Ge-C-N SystemPrincipal Investigator
- Principal Investigator
  
  SAKURABA Masao
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
人工IV族半導体の形成と光・電子物性制御
- Principal Investigator
  
  白木靖寛
- Project Period (FY)
  1999 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
Si-Ge系エピタキシャル成長による超高濃度不純物半導体の形成とその物性
- Principal Investigator
  
  室田淳一
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
Development of SiGe System MOS-HBT Technology for Fabrication of High Integrated Communication System
- Principal Investigator
  
  MUROTA Junichi
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Tohoku University
IV族半導体極微細構造形成プロセスに関する研究
- Principal Investigator
  
  室田淳一
- Project Period (FY)
  1998
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  Tohoku University
Si系アモルファス絶縁薄膜の表面構造敏感エッチングと原子制御
- Principal Investigator
  
  松浦孝
- Project Period (FY)
  1998
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tohoku University
IV族半導体薄膜へのタングステンのデルタド-ピング
- Principal Investigator
  
  室田淳一
- Project Period (FY)
  1997
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tohoku University
IV族半導体極微細構造形成プロセスに関する研究
- Principal Investigator
  
  MUROTA Junichi
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tohoku University
IV族半導体極微細構造形成プロセスに関する研究
- Principal Investigator
  
  室田淳一
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Research Institution
  Tohoku University
Langmuir Adsorption and Reaction Control in Process for Fabrication of Ultrasmall Group IV Semiconductor Devices
- Principal Investigator
  
  MUROTA Junichi
- Project Period (FY)
  1996 – 1998
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOHOKU UNIVERSITY

All 2019 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003

All Journal Article Presentation

[Journal Article] Epitaxial Growth of B-Doped Si on Si(100) by Electron-Cyclotron- Resonance Ar Plasma Chemical Vapor Deposition in a SiH_4-B_2H_6-H_2 Gas Mixture without Substrate2014
- Author(s)
  Y.Abe, M.Sakuraba and J.Murota
- Journal Title
  
  Thin Solid Films
  
  Volume: Vol.557 Pages: 10-13
- DOI
  10.1016/j.tsf.2013.08.118
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360003
[Journal Article] Nitrogen Doping Effect upon Hole Tunneling Characteristics of Si Barriers in Si_<1-x>Ge_x/Si Resonant Tunneling Diode2014
- Author(s)
  T.Kawashima, M.Sakuraba and J.Murota
- Journal Title
  
  Thin Solid Films
  
  Volume: Vol.557 Pages: 302-306
- DOI
  10.1016/j.tsf.2013.08.124
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360003
[Journal Article] Epitaxial Growth of Si1-xGex Alloys and Ge on Si(100) by Electron-Cyclotron-Resonance Ar Plasma Chemical Vapor Deposition without Substrate Heating2014
- Author(s)
  N.Ueno, M.Sakuraba, S.Sato and J.Murota
- Journal Title
  
  Thin Solid Films
  
  Volume: Vol.557 Pages: 31-35
- DOI
  10.1016/j.tsf.2013.11.023
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360003, KAKENHI-PROJECT-25330279
[Journal Article] Epitaxial Growth of Heavily B-Doped Si and Ge Films on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating2013
- Author(s)
  Y.Abe, S.Kubota, M.Sakuraba, J.Murota and S.Sato
- Journal Title
  
  ECS Trans.
  
  Volume: Vol.58, No.9 Issue: 9 Pages: 223-228
- DOI
  10.1149/05809.0223ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360003, KAKENHI-PROJECT-25330279
[Journal Article] Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD Processing2013
- Author(s)
  M.Sakuraba and J.Murota
- Journal Title
  
  ECS Trans.
  
  Volume: Vol.58, No.9 Issue: 9 Pages: 195-200
- DOI
  10.1149/05809.0195ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360003
[Journal Article] Formation and Characterization of Strained Si_<1-x>Ge_x Films Epitaxially Grown on Si(100) by Low-Energy ECR Ar plasma CVD without Substrate Heating2013
- Author(s)
  N.Ueno, M.Sakuraba, J.Murota and S.Sato
- Journal Title
  
  ECS Trans.
  
  Volume: Vol.58, No.9 Issue: 9 Pages: 207-211
- DOI
  10.1149/05809.0207ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360003, KAKENHI-PROJECT-25330279
[Journal Article] Behavior of N Atoms after Thermal Nitridation of Si_<1-x>Ge_x Surface2012
- Author(s)
  T.Kawashima, M.Sakuraba, B.Tillack and J.Murota
- Journal Title
  
  Thin Solid Films
  
  Volume: Vol.520 Issue: 8 Pages: 3392-3396
- DOI
  10.1016/j.tsf.2011.10.108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360003
[Journal Article] Fabrication of High-Ge-Fraction Strained Si_<1-x>Ge_x/Si Hole Resonant Tunneling Diode Using Low-Temperature Si_2H_6 Reaction for Nanometer-Order Ultrathin Si Barriers2011
- Author(s)
  K.Takahashi、M.Sakuraba, J.Murota
- Journal Title
  
  Solid-State Electron. Vol.60
  
  Pages: 112-115
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Atomically Controlled Plasma Processing for Quantum Heterointegration of Group IV Semiconductors2011
- Author(s)
  M.Sakuraba and J.Murota
- Journal Title
  
  ECS Trans.
  
  Volume: Vol.41, No.7 Issue: 7 Pages: 309-314
- DOI
  10.1149/1.3633311
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360003
[Journal Article] Atomically Controlled Formation of Strained Si_<1-x>Ge_x/Si Quantum Heterostructure for Room- Temperature Resonant Tunneling Diode2011
- Author(s)
  M.Sakuraba and J.Murota
- Journal Title
  
  ECS Trans.
  
  Volume: Vol.41,No.7 Issue: 7 Pages: 337-343
- DOI
  10.1149/1.3633314
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360003
[Journal Article] Capture/Emission Process of Carriers in Heterointerface Traps Observed in the Transient Charge Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs2011
- Author(s)
  T.Tsuchiya、K.Yoshida、M.Sakuraba, J. Murota
- Journal Title
  
  Key Engineering Materials Vol.470
  
  Pages: 201-206
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Electrical Characteristics of Thermal CVD B-Doped Si Films on Highly Strained Si Epitaxially Grown on Ge(100) by Plasma CVD without Substrate Heating2010
- Author(s)
  K. Sugawara、M. Sakuraba, J. Murota
- Journal Title
  
  Thin Solid Films Vol.518
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] Heavy B Atomic-Layer Doping in Si Epitaxial Growth on Si(100) Using Electron-Cyclotron-Resonance Plasma CVD2010
- Author(s)
  T. Nosaka、M. Sakuraba、B. Tillack, J. Murota
- Journal Title
  
  Thin Solid Films Vol.518
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] Heavy Atomic-Layer Doping of Nitrogen in Si_<1-x>Ge_x Film Epitaxially Grown on Si(100) by Ultraclean Low-Pressure CVD2010
- Author(s)
  T.Kawashima、M.Sakuraba、B.Tillack, J.Murota
- Journal Title
  
  Thin Solid Films Vol.518
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Impact of Si Cap Layer Growth on Surface Segregation of P Incorporated by Atomic Layer Doping2010
- Author(s)
  Y.Chiba、M.Sakuraba、B.Tillack, J.Murota
- Journal Title
  
  Thin Solid Films Vol.518
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Heavy Carbon Atomic-Layer Doping at Si_<1-x>Ge_x/Si Heterointerface2010
- Author(s)
  T.Hirano、M.Sakuraba、B.Tillack, J.Murota
- Journal Title
  
  Thin Solid Films Vol.518
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Heavy B Atomic-Layer Doping Characteristics in Si Epitaxial Growth on B Adsorbed Si(100) by Ultraclean Low-Pressure CVD System2009
- Author(s)
  H.Tanno、M.Sakuraba、B.Tillack, J.Murota
- Journal Title
  
  Solid-State Electron. Vol.53
  
  Pages: 877-879
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Improvement in Negative Differential Conductance Characteristics of Hole Resonant-Tunneling Diodes with High Ge Fraction Si/Strained Si1-xGex/Si(100) Heterostructure2009
- Author(s)
  T. Seo、K. Takahashi、M. Sakuraba, J. Murota
- Journal Title
  
  Solid-State Electron Vol.53
  
  Pages: 912-915
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] Improvement in Negative Differential Conductance Characteristics of Hole Resonant-Tunneling Diodes with High Ge Fraction Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2009
- Author(s)
  T.Seo、K.Takahashi、M.Sakuraba, J.Murota
- Journal Title
  
  Solid-State Electron. Vol.53
  
  Pages: 912-915
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Improvement in Negative Differential Conductance Characteristics of Hole Resonant-Tunneling Diodes with High Ge Fraction Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2009
- Author(s)
  T. Seo, K. Takahashi, M. Sakuraba, J. Murota
- Journal Title
  
  Solid-State Electron. Vol. 53
  
  Pages: 912-915
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360002
[Journal Article] Improvement in Negative Differential Conductance Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2009
- Author(s)
  T. Seo, K. Takahashi, M. Sakuraba and J. Murota
- Journal Title
  
  Solid State Electron accepted
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0. 4) Si/Strained Si1-xGex/Si(100) Heterostructure2008
- Author(s)
  T. Seo、M. Sakuraba, J. Murota
- Journal Title
  
  Appl. Surf. Sci Vol.254
  
  Pages: 6265-6267
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] "High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth,"2008
- Author(s)
  S. Takehiro, M. Sakuraba, T. Tsuchiya, and J. Murota
- Journal Title
  
  Thin Solid Films vol. 517, no. 1
  
  Pages: 346-349
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] Structural Change of Atomic-Order Nitride Formed on Si_<1-x>Ge_x(100) and Ge(100) by Heat Treatment2008
- Author(s)
  N.Akiyama、M.Sakuraba、B.Tillack, J.Murota
- Journal Title
  
  Thin Solid Films Vol.517
  
  Pages: 219-221
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth2008
- Author(s)
  S. Takehiro, M. Sakuraba, T. Tsuchiya, J. Murota
- Journal Title
  
  Thin Solid Films vol.517,no.1
  
  Pages: 346-349
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] Very Low-Temperature Epitaxial Growth of Silicon and Germanium Using Plasma-Assisted CVD2008
- Author(s)
  M. Sakuraba, D. Muto, M. Mori, K. Sugawara, J. Murota
- Journal Title
  
  Thin Solid Films Vol.517
  
  Pages: 10-13
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si1-xGex/Si(100) Heterostructure2008
- Author(s)
  T. Seo、M. Sakuraba, J. Murota
- Journal Title
  
  Thin Solid Films Vol.517
  
  Pages: 110-112
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] Behavior of N Atoms in Atomic-Order Nitrided Si_<0.5>Ge_<0.5>(100)2008
- Author(s)
  N.Akiyama、M.Sakuraba、B.Tillack, J.Murota
- Journal Title
  
  Appl.Surf.Sci. Vol.254、No.19
  
  Pages: 6021-6024
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Very Low-Temperature Epitaxial Growth of Silicon and Germanium Using Plasma-Assisted CVD2008
- Author(s)
  M. Sakuraba
- Journal Title
  
  Thin Solid Films 517
  
  Pages: 10-13
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] Heavy Atomic-Layer Doping of B in Low-Temperature Si Epitaxial Growth on Si(100) by Ultraclean Low-Pressure Chemical Vapor Deposition2008
- Author(s)
  H.Tanno、M.Sakuraba、B.Tillack, J.Murota
- Journal Title
  
  Appl.Surf.Sci. Vol.254、No.19
  
  Pages: 6086-6089
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Very Low-Temperature Epitaxial Growth of Silicon and Germanium Using Plasma-Assisted CVD2008
- Author(s)
  M. Sakuraba, D. Muto, M. Mori, K. Sugawara and J. Murota
- Journal Title
  
  Thin Solid Films Vol.517
  
  Pages: 10-13
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0.4) Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure"2008
- Author(s)
  T.Seo、M.Sakuraba, J.Murota
- Journal Title
  
  Appl.Surf.Sci. Vol.254、No.19
  
  Pages: 6265-6267
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] High Ge Fraction Intrinsic SiGe-Heterochannel MOSFETs with Embedded SiGe Source/Drain Electrode Formed by In-Situ Doped Selective CVD Epitaxial Growth2008
- Author(s)
  S.Takehiro、M.Sakuraba、T.Tsuchiya, J.Murota
- Journal Title
  
  Thin Solid Films Vol.517
  
  Pages: 346-349
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Local Strain in Si/Si_<0.6>Ge_<0.4>/Si(100) Heterostructures by Stripe-Shape Patterning2008
- Author(s)
  J.Uhm、M.Sakuraba, J.Murota
- Journal Title
  
  Thin Solid Films Vol.517
  
  Pages: 300-302
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2008
- Author(s)
  T. Seo, M. Sakuraba and J. Murota
- Journal Title
  
  Thin Solid Films Vol.517
  
  Pages: 110-112
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2008
- Author(s)
  T. Seo, M. Sakuraba, J. Murota
- Journal Title
  
  Thin Solid Films Vol. 517
  
  Pages: 110-112
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360002
[Journal Article] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2008
- Author(s)
  T.Seo、M.Sakuraba, J.Murota
- Journal Title
  
  Thin Solid Films Vol.517
  
  Pages: 110-112
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Si Epitaxial Growth on Self- Limitedly B Adsorbed Si_<1-x>Ge_x (100) by Ultraclean Low-Pressure CVD System2008
- Author(s)
  K.Ishibashi、M.Sakuraba、J.Murota、Y.Inokuchi、Y.Kunii, H.Kurokawa
- Journal Title
  
  Thin Solid Films Vol.517
  
  Pages: 229-231
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0.4) Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2008
- Author(s)
  T. Seo, M. Sakuraba, J. Murota
- Journal Title
  
  Appl.Surf.Sci. Vol. 254
  
  Pages: 6265-6267
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360002
[Journal Article] Self-Limited Growth of Si on B Atomic-Layer Formed Ge(100) by Ultraclean Low-Pressure CVD System2008
- Author(s)
  T.Yokogawa、K.Ishibashi、M.Sakuraba、J.Murota、Y.Inokuchi、Y.Kunii, H.Kurokawa
- Journal Title
  
  Appl.Surf.Sci. Vol.254、No.19
  
  Pages: 6090-6093
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth2008
- Author(s)
  S. Takehiro, M. Sakuraba, T. Tsuchiya, J. Murota
- Journal Title
  
  Thin Solid Films 517
  
  Pages: 346-349
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth2008
- Author(s)
  S. Takehiro, M. Sakuraba, T. Tsuchiya, and J. Murota
- Journal Title
  
  Thin Solid Films 517
  
  Pages: 346-349
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] Hot Carrier Degradation of SiGe/Si Heterointerface and Experimental Estimation of Density of Locally Generated Heterointerface Traps2007
- Author(s)
  T.Tsuchiya、S.Mishima、M.Sakuraba, J.Murota
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.46、No.8A
  
  Pages: 5015-5020
- NAID
  40015538121
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si1-xGex Epitaxially Grown on Si(100) (Invited Paper)2007
- Author(s)
  M. Sakuraba、R. Ito、T. Seo, J. Murota
- Journal Title
  
  ECS Trans Vol.11
  
  Pages: 131-139
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] Hot carrier degradation of a SiGe/Si hetero-interface and experimental estimation of the density of locally-generated hetero-interface traps2007
- Author(s)
  T. Tsuchiya, S. Mishima, M. Sakuraba, and J. Murota
- Journal Title
  
  Jpn. J. Appl. Phys. 46
  
  Pages: 5015-5020
- NAID
  40015538121
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] Hot carrier degradation of a SiGe/Si hetero-interface and experimental estimation of the density of locally-generated hetero-interface traps2007
- Author(s)
  T. Tsuchiya, S. Mishima, M. Sakuraba, and J. Murota
- Journal Title
  
  Jpn. J. Appl. Phys. 46
  
  Pages: 5015-5020
- NAID
  40015538121
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] Hot carrier degradation of a SiGe/Si hetero-interface and experimental estimation of the density of locally-generated hetero-interface traps2007
- Author(s)
  T. Tsuchiya, S. Mishima, M. Sakuraba, J. Murota
- Journal Title
  
  Jpn. J. Appl. Phys. vol.46,no.8A
  
  Pages: 5015-5020
- NAID
  40015538121
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] Epitaxial growth of highly strained Si on relaxed Ge/Si(100) using ECR plasma CVD without substrate heating2007
- Author(s)
  K. Sugawara, M. Sakuraba, J. Murota
- Journal Title
  
  Semicond. Sci. Technol Vol.22
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_<1-x>Ge_x Epitaxially Grown on Si(100)2007
- Author(s)
  M.Sakuraba、R.Ito、T.Seo, J.Murota
- Journal Title
  
  ECS Trans. Vol.11、No.6
  
  Pages: 131-139
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Prder Hterostructures of Si/Strained Si_<1-x> Ge_x Epitaxially Grown on Si(100)(Invited Paper)2007
- Author(s)
  M. Sakuraba
- Journal Title
  
  ECS Trans. 11
  
  Pages: 131-139
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360002
[Journal Article] Strain Control of Si and Si_<1-x>Ge_x Layers in the Si/Si_<1-x>Ge_x/Si Heterostructures by Stripe-Shape Patterning for Future Si-Based Devices2007
- Author(s)
  J.Murota、J.Uhm, M.Sakuraba
- Journal Title
  
  ECS Trans. Vol.11、No.6
  
  Pages: 91-99
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Hot carrier degradation of a SiGe/Si hetero-interface and experimental estimation of the density of locally-generated hetero-interface traps2007
- Author(s)
  T.Tsuchiya, S.Mishima, M.Sakuraba, and J.Murota
- Journal Title
  
  Jpn.J.Appl.Phys. vol.46, no.8A
  
  Pages: 5015-5020
- NAID
  40015538121
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_<1-x>Ge_x Epitaxially Grown on Si(100)(Invited Paper)2007
- Author(s)
  M. Sakuraba
- Journal Title
  
  ECS Trans. 11
  
  Pages: 131-139
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206032
[Journal Article] Epitaxial Growth of Highly Strained Si on Relaxed Ge/Si(100) Using ECR Plasma CVD without Substrate Heating2007
- Author(s)
  K. Sugawara, M. Sakuraba and J. Murota
- Journal Title
  
  Semicond. Sci. Technol. Vol.22, No.1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] "Hot carrier degradation of a SiGe/Si hetero-interface and experimental estimation of the density of locally-generated hetero-interface traps,"2007
- Author(s)
  T. Tsuchiya, S. Mishima, M. Sakuraba, and J. Murota
- Journal Title
  
  Jpn. J. Appl. Phys. vol. 46, no. 8A
  
  Pages: 5015-5020
- NAID
  40015538121
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] Hole tunneling properties in resonant tunneling diodes with Si/Strained Si0. 8Ge0. 2 heterostructures grown on Si(100) by low-temperature ultraclean LPCVD2007
- Author(s)
  R. Ito, M. Sakuraba, J. Murota
- Journal Title
  
  Semicond. Sci. Technol Vol.22
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructuresof Si/Strained Si_<1-x>Ge_x Epitaxially Grown on Si (100)(Invited Paper)2007
- Author(s)
  M. Sakuraba
- Journal Title
  
  ECS Trans. 11
  
  Pages: 131-139
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_<1-x>Ge_x Epitaxially Grown on Si (100)2007
- Author(s)
  M. Sakuraba, R. Ito, T. Seo, J. Murota
- Journal Title
  
  ECS Trans. Vol. 11(Invited Paper)
  
  Pages: 131-139
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360002
[Journal Article] Photo detection characteristics of Si/Si_<1-x>Ge_x/Si p-i-n diodes integrated with optical waveguides2006
- Author(s)
  A.Yamada, M.Sakuraba, J.Murota
- Journal Title
  
  Thin Solid Films Vol.508
  
  Pages: 399-401
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] BドープSiGe選択CVD成長により形成された極浅ソース・ドレインと高Ge比率歪SiGeヘテロチャネルを有する高性能pMOSFET2006
- Author(s)
  竹廣忍, 櫻庭政夫, 室田淳一, 土屋敏章
- Journal Title
  
  電気学会論文誌C, IEEJ Trans. EIS vol. 126・no. 9
  
  Pages: 1079-1082
- NAID
  10019289946
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] Hot-Carrier-Degradation of Hetero-Interface in SiGe/Si-Hetero-MOSFETs2006
- Author(s)
  Toshiaki Tsuchiya, Masao Sakuraba, Junichi Murota
- Journal Title
  
  2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
  
  Pages: 83-84
- NAID
  10018312310
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] "SiGe/SiヘテロMOSFETにおけるホットキャリアによるヘテロ界面準位の発生,"2006
- Author(s)
  土屋敏章,櫻庭政夫,室田淳一
- Journal Title
  
  電気学会論文誌C,IEEJ Trans. EIS. vol. 126, no. 9
  
  Pages: 1101-1106
- NAID
  10019289991
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] The Instability of the SiGe/Si-Hetero-Interface in Hetero-MOSFETs due to Bias Stress2006
- Author(s)
  Toshiaki Tsuchiya, Seiji Mishima, Masao Sakuraba, Junichi Murota
- Journal Title
  
  IEEE Semiconductor Interface Specialist Conference (SISC 2006)
  
  Pages: 15-15
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices2006
- Author(s)
  Toshiaki Tsuchiya, Masao Sakuraba, Junichi Murota
- Journal Title
  
  Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD2006)
  
  Pages: 21-24
- NAID
  110004813188
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] Characterization of Hot-Carrier Degraded SiGe/Si-Hetero-PMOSFETs2006
- Author(s)
  Toshiaki Tsuchiya, Masao Sakuraba, Junichi Murota
- Journal Title
  
  Thin Solid Films Vol.508・Issues 1-2
  
  Pages: 326-328
- NAID
  120005587465
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] "Characterization of Hot-Carrier Degraded SiGe/Si-Hetero-PMOSFETs,"2006
- Author(s)
  T. Tsuchiya, M. Sakuraba, and J. Murota
- Journal Title
  
  Thin Solid Films Vol. 508, Issues 1-2
  
  Pages: 326-328
- NAID
  120005587465
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] BドープSiGe選択CVD成長により形成された極浅ソース・ドレインと高Ge比率歪SiGeヘテロチャネルを有する高性能pMOSFET2006
- Author(s)
  竹廣忍, 櫻庭政夫, 室田淳一, 土屋敏章
- Journal Title
  
  電気学会論文誌C, IEEJ Trans. EIS vol.126・no.9
  
  Pages: 1079-1082
- NAID
  10019289946
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] Strain relaxation by stripe patterning in Si/Si_<1-x>Ge_x/Si(100) hetereostructures2006
- Author(s)
  J.Uhm, M.Sakuraba, J.Murota
- Journal Title
  
  Thin Solid Films Vol.508
  
  Pages: 239-242
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Effect of grain boundary on electrical characteristics in B- and P-doped polycrystalline Si_<1-x-y>Ge_xC_y film deposited by ultraclean LPCVD2006
- Author(s)
  H.Shim, M.Sakuraba, J.Murota
- Journal Title
  
  Thin Solid Films Vol.508
  
  Pages: 36-39
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Epitaxial Growth of Group IV Semiconductor in ECR Plasma Enhanced CVD2006
- Author(s)
  M.Sakuraba et al.
- Journal Title
  
  Abstracts of 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics (Tohoku Univ., Sendai, Japan, Oct. 2-3, 2006)
  
  Pages: 99-100
- NAID
  10018312379
- Data Source
  KAKENHI-PROJECT-18063001
[Journal Article] Characterization of Hot-Carrier Degraded SiGe/Si-Hetero-PMOSFETs2006
- Author(s)
  T. Tsuchiya, M. Sakuraba, J. Murota
- Journal Title
  
  Thin Solid Films Vol.508,Issues1-2
  
  Pages: 326-328
- NAID
  120005587465
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] Characterization of hot-carrier degraded SiGe/Si-hetero-PMOSFETs2006
- Author(s)
  T.Tsuchiya, M.Sakuraba, J.Murota
- Journal Title
  
  Thin Solid Films Vol.508
  
  Pages: 326-328
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] SiGe/SiヘテロMOSFETにおけるホットキャリアによるヘテロ界面準位の発生2006
- Author(s)
  土屋敏章, 櫻庭政夫, 室田淳一
- Journal Title
  
  電気学会論文誌C, IEEJ Trans. EIS. vol.126,no.9
  
  Pages: 1101-1106
- NAID
  10019289991
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] BドープSiGe選択CVD成長により形成された極浅ソース・ドレインと高Ge比率歪SiGeヘテロチャネルを有する高性能pMOSFET2006
- Author(s)
  竹廣忍, 櫻庭政夫, 室田淳一, 土屋敏章
- Journal Title
  
  電気学会論文誌C, IEEJ Trans. EIS. vol.126,no.9
  
  Pages: 1079-1082
- NAID
  10019289946
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] Surface reaction and B atom segregation in ECR chlorine plasma etching of B-doped Si_<1-x>Ge_x epitaxial films2006
- Author(s)
  H.-S.Cho, M.Sakuraba, J.Murota
- Journal Title
  
  Thin Solid Films Vol.508
  
  Pages: 301-304
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Characterization of Hot-Carrier Degraded SiGe/Si-Hetero-PMOSFETs2006
- Author(s)
  T.Tsuchiya, M.Sakuraba, and J.Murota
- Journal Title
  
  Thin Solid Films Vol.508, Issues 1-2
  
  Pages: 326-328
- NAID
  120005587465
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] Characterization of Hot-Carrier Degraded SiGe/Si-Hetero-PMOSFETs2006
- Author(s)
  Toshiaki Tsuchiya, Masao Sakuraba, Junichi Murota
- Journal Title
  
  Thin Solid Films Vol. 508・Issues 1-2
  
  Pages: 326-328
- NAID
  120005587465
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] The Instability of the SiGe/Si-Hetero-Interface in Hetero-MOSFETs due to Bias Stress2006
- Author(s)
  Toshiaki Tsuchiya, Seiji Mishima, Masao Sakuraba, Junichi Murota
- Journal Title
  
  IEEE Semiconductor Interface Specialist Conference (SISC 2006)
  
  Pages: 15-15
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices2006
- Author(s)
  Toshiaki Tsuchiya, Masao Sakuraba, Junichi Murota
- Journal Title
  
  Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD2006)
  
  Pages: 21-24
- NAID
  110004813188
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] ,"BドープSiGe選択CVD成長により形成された極浅ソース・ドレインと高Ge比率歪SiGeヘテロチャネルを有する高性能pMOSFET,"2006
- Author(s)
  竹廣忍,櫻庭政夫,室田淳一,土屋敏章
- Journal Title
  
  電気学会論文誌C,IEEJ Trans. EIS. vol. 126, no. 9
  
  Pages: 1079-1082
- NAID
  10019289946
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] Carbon effect on strain compensation in Si_<1-x-y>Ge_xC_y films epitaxially grown on Si(100)2006
- Author(s)
  H.Nitta, J.Tanabe, M.Sakuraba, J.Murota
- Journal Title
  
  Thin Solid Films Vol.508
  
  Pages: 140-142
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] SiGe/SiヘテロMOSFETにおけるホットキャリアによるヘテロ界面準位の発生2006
- Author(s)
  土屋敏章, 櫻庭政夫, 室田淳一
- Journal Title
  
  電気学会論文誌C, IEEJ Trans. EIS vol.126・no.9
  
  Pages: 1101-1106
- NAID
  10019289991
- Data Source
  KAKENHI-PROJECT-18360174
[Journal Article] SiGe/SiヘテロMOSFETにおけるホットキャリアによるヘテロ界面準位の発生2006
- Author(s)
  土屋敏章, 櫻庭政夫, 室田淳一
- Journal Title
  
  電気学会論文誌C, IEEJ Trans. EIS vol. 126・no. 9
  
  Pages: 1101-1106
- NAID
  10019289991
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] Thermal effect on strain relaxation in Ge films epitaxially grown on Si(100) using ECR plasma CVD2006
- Author(s)
  K.Sugawara, M.Sakuraba, J.Murota
- Journal Title
  
  Thin Solid Films Vol.508
  
  Pages: 143-146
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Hot-Carrier-Degradation of Hetero-Interface in SiGe/Si-Hetero-MOSFETs2006
- Author(s)
  Toshiaki Tsuchiya, Masao Sakuraba, Junichi Murota
- Journal Title
  
  2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
  
  Pages: 83-84
- NAID
  10018312310
- Data Source
  KAKENHI-PROJECT-18063016
[Journal Article] Atomically Controlled Ge Epitaxial Growth on Si(100) in Ar-Plasma-Enhanced GeH_4 Reaction2005
- Author(s)
  K.Sugawara, M.Sakuraba, J.Murota
- Journal Title
  
  Mat.Sci.Semiconductor Processing Vol.8
  
  Pages: 69-72
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Integration of Si p-i-n Diodes for Light Emitter and Detector with Optical Waveguides2005
- Author(s)
  A.Yamada, M.Sakuraba, J.Murota
- Journal Title
  
  Mat.Sci.Semiconductor Processing Vol.8
  
  Pages: 435-438
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Atomically Controlled CVD Technology for Future Si-Based Devices (Invited Paper)2005
- Author(s)
  J.Murota, M.Sakuraba, B.Tillack
- Journal Title
  
  Proc.Int.Symp.ULSI Process Integration IV (Spring Meeting of Electrochem.Soc., Quebec City, Canada, May 15-20, 2005)
  
  Pages: 53-66
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Epitaxial Growth of SiGe Alloy and Its Atomic Layer Control (Technical Review Paper)(in Japanese)2005
- Author(s)
  J.Murota, M.Sakuraba
- Journal Title
  
  VACUUM (The Vacuum Society of Japan) Vol.48, No.1
  
  Pages: 8-12
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Electrical Properties of N Atomic Layer Doped Si Epitaxial Films Grown by Ultraclean Low-Pressure Chemical Vapor Deposition2005
- Author(s)
  Y.Jeong, M.Sakuraba, J.Murota
- Journal Title
  
  Mat.Sci.Semiconductor Processing Vol.8
  
  Pages: 121-124
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Si Epitaxial Growth on Atomic-Order Nitrided Si(100) Using Electron Cyclotron Resonance Plasma2005
- Author(s)
  M.Mori, T.Seino, D.Muto, M.Sakuraba, J.Murota
- Journal Title
  
  Mat.Sci.Semiconductor Processing Vol.8
  
  Pages: 65-68
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Separation by Bonding Si Islands for Advanced CMOS LSIs Application2005
- Author(s)
  T.Yamazaki, S.Ohmi, S.Morita, H.Ohri, J.Murota, M.Sakuraba, H.Ohmi, T.Sakai
- Journal Title
  
  IEICE Trans.Electron Vol.E88-C
  
  Pages: 656-661
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Sidewall Protection by Nitrogen, Oxygen in Poly-Si_<1-x>Ge_x Anisotropic Etching Using Cl_2/N_2/O_2 Plasma2005
- Author(s)
  H.-S.Cho, S.Takehiro, M.Sakuraba, J.Murota
- Journal Title
  
  Mat.Sci.Semiconductor Processing Vol.8
  
  Pages: 239-243
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Separation by Bonding Si Islands (SBSI) for LSI Applications2005
- Author(s)
  T.Yamazaki, S.Ohmi, S.Morita, H.Ohri, J.Murota, M.Sakuraba, H.Omi, Y.Takahashi, T.Sakai
- Journal Title
  
  Mat.Sci.Semiconductor Processing Vol.8
  
  Pages: 59-63
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Electrical Properties of W Delta Doped Si Epitaxial Films Grown on Si(100) byUltraclean Low-Pressure Chemical Vapor Deposition2005
- Author(s)
  T.Kurosawa, T.Komatsu, M.Sakuraba, J.Murota
- Journal Title
  
  Mat.Sci.Semiconductor Processing Vol.8
  
  Pages: 125-129
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] SiGe系エピタキシャル成長とその原子層制御2005
- Author(s)
  室田淳一, 櫻庭政夫
- Journal Title
  
  真空 48
  
  Pages: 8-12
- NAID
  10014381754
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Proposal of a Multi-Layer Channel MOSFET : The Application of Selective Etching for Si/SiGe Stacked Layers2004
- Author(s)
  D.Sasaki, S.Ohmi, M.Sakuraba, J.Murota, T.Sakai
- Journal Title
  
  Appl.Surf.Sci. Vol.224
  
  Pages: 270-273
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Fabrication of 0.12-μm pMOSFETs on High Ge Fraction Si/Si_<1-x>Ge_x/Si(100) heterostructure with Ultrashallow Source/Drain Formed using B-Doped SiGe CVD2004
- Author(s)
  D.Lee, S.Takehiro, M.Sakuraba, J.Murota, T.Tsuchiya
- Journal Title
  
  Appl.Surf.Sci. Vol.224
  
  Pages: 254-259
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Effect of Carbon on the Thermal Stability of a Si Atomic Layer on Ge(1002004
- Author(s)
  M.Fujiu, K.Takahashi, M.Sakuraba, J.Murota
- Journal Title
  
  Appl.Surf.Sci. Vol.224
  
  Pages: 206-209
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Atomically Controlled Technology for Future Si-Based Devices2004
- Author(s)
  J.Murota, M.Sakuraba, B.Tillack
- Journal Title
  
  Solid State Phenomena Vol.95-96
  
  Pages: 607-616
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Ar Plasma Irradiation Effects in Atomically Controlled Si Epitaxial Growth2004
- Author(s)
  D.Muto, M.Sakuraba, T.Seino, J.Murota
- Journal Title
  
  Appl.Surf.Sci. Vol.224
  
  Pages: 210-214
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Epitaxial Growth of N Delta Doped Si Films on Si(100) by Alternately Supplied NH_3 and SiH_42004
- Author(s)
  Y.Jeong, M.Sakuraba, J.Murota
- Journal Title
  
  Appl.Surf.Sci. Vol.224
  
  Pages: 197-201
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Formation of Heavily P-Doped Si Epitaxial Film on Si(100) by Multiple Atomic-Layer Doping Technique2004
- Author(s)
  Y.Shimamune, M.Sakuraba, J.Murota
- Journal Title
  
  Appl.Surf.Sci. Vol.224
  
  Pages: 202-205
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Relationship between Impurity (B or P), Carrier Concentration in SiGe(C) Epitaxial Film Produced by Thermal Treatment2004
- Author(s)
  J.Noh, S.Takehiro, M.Sakuraba, J.Murota
- Journal Title
  
  Appl.Surf.Sci. Vol.224
  
  Pages: 77-81
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] W Delta Doping in Si(100) Using Ultraclean Low-Pressure CVD2003
- Author(s)
  T.Kanaya, M.Sakuraba, J.Murota
- Journal Title
  
  Appl.Surf.Sci. Vol.212-213
  
  Pages: 684-688
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Si Atomic Layer-by-Layer Epitaxial Growth Process Using Alternate Exposure of Si(100) to SiH_4 and to Ar Plasma2003
- Author(s)
  M.Sakuraba, D.Muto, T.Seino, J.Murota
- Journal Title
  
  Appl.Surf.Sci. Vol.212-213
  
  Pages: 197-200
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Si Epitaxial Growth on SiH_3CH_3 Reacted Ge(100) and Intermixing between Si and Ge during Heat Treatment2003
- Author(s)
  K.Takahashi, M.Fujiu, M.Sakuraba, J.Murota
- Journal Title
  
  Appl.Surf.Sci. Vol.212-213
  
  Pages: 193-196
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Contact Resistivity between Tungsten and Impurity (P and B)-Doped Si_<1-x-y>Ge_xC_y Epitaxial Layer2003
- Author(s)
  J.Noh, M.Sakuraba, J.Murota, S.Zaima, Y.Yasuda
- Journal Title
  
  Appl.Surf.Sci. Vol.212-213
  
  Pages: 679-683
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Si Atomic Layer-by-Layer Epitaxial Growth Process Using Alternate Exposure of Si(100) to SiH_4 and to Ar Plasma2003
- Author(s)
  M.Sakuraba et al.
- Journal Title
  
  Appl. Surf. Sci. Vol.212-213
  
  Pages: 197-200
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Atomic-Layer Doping in Si by Alternately Supplied NH_3 and SiH_42003
- Author(s)
  Y.Jeong, M.Sakuraba, J.Murota
- Journal Title
  
  Appl.Phys.Lett. Vol.82, No.20
  
  Pages: 3472-3474
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Journal Article] Work Function of Impurity-Doped Polycrystalline Si_<1-x-y>Ge_xC_y Film Deposited by Ultraclean Low-Pressure CVD2003
- Author(s)
  H.Shim, M.Sakuraba, T.Tsuchiya, J.Murota
- Journal Title
  
  Appl.Surf.Sci. Vol.212-213
  
  Pages: 209-212
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206031
[Presentation] Low-Energy Plasma Enhanced Epitaxy and In-Situ Doping for Group-IV Semiconductor Device Fabrication2019
- Author(s)
  M. Sakuraba and S. Sato
- Organizer
  2019 Collaborative Conf. on Materials Research (CCMR), Gyeonggi Goyang/Seoul, South Korea, June 3-7, 2019, Abs. pp.100-104
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K18987
[Presentation] Low-Energy Plasma Enhanced Chemical Vapor Deposition and In-Situ Doping for Junction Formation in Group-IV Semiconductor Devices2019
- Author(s)
  M. Sakuraba and S. Sato
- Organizer
  Symp. G03: Semiconductor Process Integration 11, 236th Meeting of the Electrochem. Soc., Atlanta, GA, Oct. 13-17, 2019, Abs.No.G03-1164
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K18987
[Presentation] Characterization of Strain in Si1-xGex Films Epitaxially Grown on Si(100) by ECR Ar Plasma CVD without Substrate Heating2014
- Author(s)
  N. Ueno, M. Sakuraba, J. Murota and S. Sato
- Organizer
  7th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", Abs.No.P-21.
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Characterization of Strain in Si_<1-x>Ge_x Films Epitaxially Grown on Si(100) by ECR Ar Plasma CVD without Substrate Heating2014
- Author(s)
  N.Ueno, M.Sakuraba, J.Murota and S. ato
- Organizer
  7th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Tohoku Univ., Sendai, Japan (Abs.No.P-21)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Tunneling Characteristics in Si_<1-x>Ge_x/Si Resonant Tunneling Diode2013
- Author(s)
  T.Kawashima, M.Sakuraba and J.Murota
- Organizer
  6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Tohoku Univ., Sendai, Japan (Abs.No.P-15)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD Processing2013
- Author(s)
  M.Sakuraba and J.Murota
- Organizer
  Symp. E12: ULSI Process Integration 8
- Place of Presentation
  San Francisco, USA (Abs. 224th Electrochem. Soc. Meeting, Abs.No.2226)
- Invited
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Epitaxial Growth of B-Doped Si on Si(100) by ECR Ar Plasma CVD in a SiH_4-B_2H_6-H_2 Gas Mixture without Substrate Heating2013
- Author(s)
  Y.Abe, M.Sakuraba and J.Murota
- Organizer
  8th Int. Conf. on Si Epitaxy and Heterostructures
- Place of Presentation
  Fukuoka, Japan (Abs.No.P1-4)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Formation and Characterization of Strained Si_<1-x>Ge_x Films Epitaxially Grown on Si(100) by Low-Energy ECR Ar plasma CVD without Substrate Heating2013
- Author(s)
  N.Ueno, M.Sakuraba, J.Murota and S.Sato
- Organizer
  Symp. E12: ULSI Process Integration 8
- Place of Presentation
  San Francisco, USA (Abs. 224th Electrochem. Soc. Meeting, Abs.No.2228)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD Processing (Invited Paper)2013
- Author(s)
  M. Sakuraba and J. Murota
- Organizer
  Symp. E12: ULSI Process Integration 8 (ECS Trans., Vol.58, No.9, 2013), pp.195-200, Abs.No.2226.
- Place of Presentation
  San Francisco, USA
- Invited
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Nitrogen Doping Effect upon Hole Tunneling Characteristics of Si Barriers in Si_<1-x>Ge_x/Si Resonant Tunneling Diode2013
- Author(s)
  T.Kawashima, M.Sakuraba and J.Murota
- Organizer
  8th Int. Conf. on Si Epitaxy and Heterostructures
- Place of Presentation
  Fukuoka, Japan (Abs.No.P1-27)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Epitaxial Growth of Si1-xGex Alloy on Si(100) by ECR Ar Plasma CVD in a SiH4-GeH4 Gas Mixture without Substrate Heating2013
- Author(s)
  N. Ueno, M. Sakuraba, J. Murota and S. Sato
- Organizer
  Abs. 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8) & 6th Int. Symp. Control of Semiconductor Interfaces (ISCSI-VI), Abs.No.P1-8.
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Epitaxial Growth of B-Doped Ge on Si(100) by ECR Ar Plasma CVD from GeH_4-B_2H_6-H_2 Gas Mixture without Substrate Heating2013
- Author(s)
  S.Kubota, M.Sakuraba, J.Murota and S.Sato
- Organizer
  6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Tohoku Univ., Sendai, Japan (Abs.No.P-18)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Atomically Controlled Plasma CVD Processing for Quantum Heterointegration of Group IV Semiconductors2013
- Author(s)
  M. Sakuraba, 他
- Organizer
  6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Sendai, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Atomically Controlled Plasma CVD Processing for Quantum Heterointegration of Group IV Semiconductors2013
- Author(s)
  M.Sakuraba and J.Murota
- Organizer
  6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Tohoku Univ., Sendai, Japan (Abs.No.D-3)
- Invited
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Epitaxial Growth of B-Doped Si on Si(100) by ECR Ar Plasma CVD from SiH_4-B_2H_6-H_2 Gas Mixture without Substrate Heating2013
- Author(s)
  Y.Abe, M.Sakuraba and J.Murota
- Organizer
  6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Tohoku Univ., Sendai, Japan (Abs.No.P-16)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Formation and Characterization of Strained Si1-xGex Films Epitaxially Grown on Si(100) by Low-Energy ECR Ar plasma CVD without Substrate Heating2013
- Author(s)
  N. Ueno, M. Sakuraba, J. Murota and S. Sato
- Organizer
  Symp. E12: ULSI Process Integration 8 (ECS Trans., Vol.58, No.9, 2013), pp.207-211, Abs.No.2228.
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Epitaxial Growth of B-Doped Si on Si(100) by ECR Ar Plasma CVD in a SiH4-B2H6-H2 Gas Mixture without Substrate Heating2013
- Author(s)
  Y. Abe, M. Sakuraba and J. Murota
- Organizer
  Abs. 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8) & 6th Int. Symp. Control of Semiconductor Interfaces (ISCSI-VI), Abs.No.P1-4.
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Epitaxial Growth of Heavily B-Doped Si and Ge Films on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating2013
- Author(s)
  Y.Abe, S.Kubota, M.Sakuraba, J.Murota and S.Sato
- Organizer
  Symp. E12: ULSI Process Integration 8
- Place of Presentation
  San Francisco, USA (Abs. 224th Electrochem. Soc. Meeting, Abs.No.2230)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Epitaxial Growth of Heavily B-Doped Si and Ge Films on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating2013
- Author(s)
  Y. Abe, S. Kubota, M. Sakuraba, J. Murota and S. Sato
- Organizer
  Symp. E12: ULSI Process Integration 8 (ECS Trans., Vol.58, No.9, 2013), pp.223-228, Abs.No.2230.
- Place of Presentation
  San Francisco, USA
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Nitrogen Doping Effect upon Hole Tunneling Characteristics of Si Barriers in Si1-xGex/Si Resonant Tunneling Diode2013
- Author(s)
  T. Kawashima, M. Sakuraba and J. Murota
- Organizer
  Abs. 8th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-8) & 6th Int. Symp. Control of Semiconductor Interfaces (ISCSI-VI), Abs.No.P1-27.
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Epitaxial Growth of Si_<1-x>Ge_x Alloy on Si(100) by ECR Ar Plasma CVD in a SiH_4-GeH_4 Gas Mixture without Substrate Heating2013
- Author(s)
  N.Ueno, M.Sakuraba, J.Murota and S.Sato
- Organizer
  8th Int. Conf. on Si Epitaxy and Heterostructures
- Place of Presentation
  Fukuoka, Japan (Abs.No.P1-8)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Epitaxial Growth of Si_<1-x>Ge_x on Si(100) by ECR Ar Plasma CVD from SiH_4-GeH_4 Gas Mixture without Substrate Heating2013
- Author(s)
  N.Ueno, M.Sakuraba, J.Murota and S.Sato
- Organizer
  6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  Tohoku Univ., Sendai, Japan (Abs.No.P-17)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Atomically Controlled Formation of Strained Si_<1-x>Ge_x/Si Quantum Heterostructure for Room- Temperature Resonant Tunneling Diode2011
- Author(s)
  M.Sakuraba and J.Murota
- Organizer
  Symp. E9: ULSI Process Integration 7
- Place of Presentation
  Boston, USA (Abs. 220th Electrochem. Soc. Meeting, Abs.No.2147)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Atomically Controlled Formation of Strained Si_<1-x>Ge_x/Si Quantum Heterostructure for Room-Temperature Resonant Tunneling Diode2011
- Author(s)
  M.Sakuraba, J.Murota
- Organizer
  Symp.E9 : ULSI Process Integration 7 (220th Meeting of the Electrochem.Soc.)
- Place of Presentation
  Boston, USA
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Fabrication of Room-Temperature Resonant Tunneling Diode with Atomically Controlled Strained Si_<1-x>Ge_x/Si Quantum Heterostructure2011
- Author(s)
  M.Sakuraba, J.Murota
- Organizer
  4th French Research Organizations-Tohoku University Joint Workshop on Frontier Materials (Frontier 2011)
- Place of Presentation
  Sendai, Japan(Invited Paper)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Atomically Controlled Plasma Processing for Quantum Heterointegration of Group IV Semiconductors2011
- Author(s)
  M.Sakuraba, J.Murota
- Organizer
  Symp.E9 : ULSI Process Integration 7 (220th Meeting of the Electrochem.Soc.)
- Place of Presentation
  Boston, USA
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Fabrication of Room-Temperature Resonant Tunneling Diode with Atomically Controlled Strained Si_<1-x>Ge_x/Si Quantum Heterostructure2011
- Author(s)
  M.Sakuraba and J.Murota
- Organizer
  4th French Research Organizations - Tohoku University Joint Workshop on Frontier Materials (Frontier 2011)
- Place of Presentation
  Sendai, Japan (p.35)
- Invited
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Behavior of N Atoms after Thermal Nitridation of Si_<1-x>Ge_x Surface2011
- Author(s)
  T.Kawashima, M.Sakuraba, B.Tillack and J.Murota
- Organizer
  7th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-7)
- Place of Presentation
  Leuven, Belgium (Abs.No.1171)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Atomically Controlled Plasma Processing for Quantum Heterointegration of Group IV Semiconductors2011
- Author(s)
  M.Sakuraba and J.Murota
- Organizer
  Symp. E9: ULSI Process Integration 7
- Place of Presentation
  Boston, USA (Abs. 220th Electrochem. Soc. Meeting, Abs.No.2152)
- Data Source
  KAKENHI-PROJECT-23360003
[Presentation] Evolution of the Hydrogen Terminated Structure of the Si(100) Surface and Its Interaction with H_2 at 20-800℃2010
- Author(s)
  A.Uto、M.Sakuraba、M.Caymax, J.Murota
- Organizer
  5th Int.SiGe Technology and Device Meeting (ISTDM2010)
- Place of Presentation
  Stockholm、Sweden
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Epitaxial Growth of Group IV Semiconductor Nanostructures Using Atomically Controlled Plasma Processing2010
- Author(s)
  M.Sakuraba
- Organizer
  5th Int.Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Adsorption and Desorption of Hydrogen on Si(100) in H_2 or Ar Heat Treatment2010
- Author(s)
  A.Uto、M.Sakuraba、M.Caymax, J.Murota
- Organizer
  5th Int.Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] In-Situ Heavy B-Doped Si Epitaxial Growth on Tensile-Strained Si(100) by Ultraclean Low-Pressure CVD Using SiH_4 and B_2H_62010
- Author(s)
  M.Nagato、M.Sakuraba、J.Murota、B.Tillack、Y.Inokuchi、Y.Kunii, H.Kurokawa
- Organizer
  5th Int.SiGe Technology and Device Meeting(ISTDM2010)
- Place of Presentation
  Stockholm、Sweden
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Atomically Controlled Processing in Strained Si-Based CVD Epitaxial Growth2010
- Author(s)
  J.Murota、M.Sakuraba, B.Tillack
- Organizer
  10th IEEE Int.Conf.on Solid-State and Integrated Circuit Technology (ICSICT-2010)
- Place of Presentation
  Shanghai、China(Invited Paper)
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Effect of Heavy Carbon Atomic-Layer Doping upon Intermixing and Strain at Si_<1-x>Ge_x/Si(100) Heterointerface2010
- Author(s)
  T.Hirano、M.Sakuraba、B.Tillack, J.Murota
- Organizer
  5th Int.Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Influence of Strain on P Atomic-Layer Doping Characteristics in Strained Si_<0.3>Ge_<0.7>/Si(100) Heterostructures2010
- Author(s)
  Y.Chiba、M.Sakuraba、B.Tillack, J.Murota
- Organizer
  5th Int.SiGe Technology and Device Meeting (ISTDM2010)
- Place of Presentation
  Stockholm、Sweden
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Epitaxial Growth of Group IV Semiconductor Nanostructures Using Atomically Controlled Plasma Processing (Invited Paper)2010
- Author(s)
  M. Sakuraba、T. Nosaka、K. Sugawara, J. Murota
- Organizer
  5th Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Heavy P Atomic-Layer Doping between Si and Si_<0.3>Ge_<0.7>(100) by Ultraclean Low Pressure CVD2010
- Author(s)
  Y.Chiba、M.Sakuraba、B.Tillack, J.Murota
- Organizer
  5th Int.Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] N Atomic-Layer Doping in Si/Si_<1-x>Ge_x/Si(100) Heterostructure Growth by Low-Pressure CVD2010
- Author(s)
  T.Kawashima、M.Sakuraba、B.Tillack, J.Murota
- Organizer
  5th Int.Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Mobility Enhancement by Highly Strained Si on Relaxed Ge(100) Buffer Grown by Plasma CVD2010
- Author(s)
  K. Sugawara, M. Sakuraba, J. Murota
- Organizer
  5th Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Impact of Si Cap Layer Growth on Surface Segregation of P Incorporated by Atomic-Layer Doping of Strained Si_<1-x>Ge_x2009
- Author(s)
  Y.Chiba、M.Sakuraba、B.Tillack, J.Murota
- Organizer
  6th Int.Conf.on Silicon Epitaxy and Heterostructures (ICSI-6)
- Place of Presentation
  Los Angeles、USA
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Si1-xGex Epitaxially Grown on Si(100) (Invited Paper)2009
- Author(s)
  M. Sakuraba, J. Murota
- Organizer
  1st Int. Workshop on Si Based Nano-Electronics and -Photonics (SiNEP-09)
- Place of Presentation
  Vigo、Spain
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Sil-xGex Epitaxially Grown on Si(100)(Invited Paper)2009
- Author(s)
  M.Sakuraba
- Organizer
  1st Int.Workshop on Si Based Nano-Electronics and -Photonics(SiNEP-09)
- Place of Presentation
  Vigo, Spain
- Data Source
  KAKENHI-PROJECT-19360002
[Presentation] Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Si_<1-x>Ge_x Epitaxially Grown on Si(100)2009
- Author(s)
  M.Sakuraba
- Organizer
  2nd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Si_<1-x>Ge_x Epitaxially Grown on Si(100)2009
- Author(s)
  M.Sakuraba
- Organizer
  1st Int.Workshop on Si Based Nano-Electronics and-Photonics(SiNEP-09)
- Place of Presentation
  Vigo, Spain
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Atomically Controlled Processing for Group-IV Semiconductors2009
- Author(s)
  J.Murota, M.Sakuraba
- Organizer
  2009 Int.Conf.on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs.TFT)
- Place of Presentation
  Xi'an、China(Invited Paper)
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Heavily B Atomic-Layer Doping Characteristics in Si Epitaxial Growth on Si(100) Using Electron-Cyclotron-Resonance Ar Plasma2009
- Author(s)
  T. Nosaka、M. Sakuraba、B. Tillack, J. Murota
- Organizer
  6th Int. Conf. on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Los Angeles、USA
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Heavy Carbon Atomic-Layer Doping at Si_<1-x>Ge_x/Si Heterointerface2009
- Author(s)
  T.Hirano、M.Sakuraba、B.Tillack, J.Murota
- Organizer
  6th Int.Conf.on Silicon Epitaxy and Heterostructures (ICSI-6)
- Place of Presentation
  Los Angeles、USA
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Si_<1-x>Ge_x Epitaxially Grown on Si(100)2009
- Author(s)
  M. Sakuraba, J. Murota
- Organizer
  1st Int. Workshop on Si Based Nano-Electronics and-Photonics (SiNEP-09)
- Place of Presentation
  Vigo, Spain(Invited Paper)
- Data Source
  KAKENHI-PROJECT-19360002
[Presentation] Heavy Nitrogen Atomic-Layer Doping of Si_<1-x>Ge_x Epitaxially Grown on Si(100) by Ultraclean Low-Pressure CVD2009
- Author(s)
  T.Kawashima、M.Sakuraba、B.Tillack, J.Murota
- Organizer
  6th Int.Conf.on Silicon Epitaxy andHeterostructures (ICSI-6)
- Place of Presentation
  Los Angeles、USA
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Electrical Characteristics of B-Doped Highly Strained Si Films Epitaxially Grown on Ge(100) Formed by Plasma CVD2009
- Author(s)
  K. Sugawara、M. Sakuraba, J. Murota
- Organizer
  6th Int. Conf. on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Los Angeles、USA
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Atomically Controlled CVD Processing for Doping of Si-Based Group IV Semiconductors2009
- Author(s)
  J.Murota、M.Sakuraba, B.Tillack
- Organizer
  Symp. E10 : ULSI Process Integration 6 (216th Meeting of the Electrochem.Soc.)
- Place of Presentation
  Vienna、Austria(Invited Paper)
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Atomically Controlled Plasma Processing for Epitaxial Growth of Group IV Semiconductor Nanostructures2009
- Author(s)
  M.Sakuraba
- Organizer
  Symp.E10 : ULSI Process Integration 6(216th Meeting of the Electrochem.Soc.)
- Place of Presentation
  Vienna, Austria
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Atomically Controlled Plasma Processing for Epitaxial Growth of Group IV Semiconductor Nanostructures2009
- Author(s)
  M. Sakuraba, K. Sugawara, J. Murota
- Organizer
  Symp. E10: ULSI Process Integration 6、(216th Meeting of the Electrochem. Soc. )
- Place of Presentation
  Vienna、Austria
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Si1-xGex Epitaxially Grown on Si(100)2009
- Author(s)
  M. Sakuraba, J. Murota
- Organizer
  2nd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Si_<1-x>Ge_x Epitaxially Grown on Si(100)2009
- Author(s)
  M. Sakuraba, J. Murota
- Organizer
  2nd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-19360002
[Presentation] Atomically Controlled Plasma Processing for Epitaxial Growth of Group IV Semiconductor Nanostructures2009
- Author(s)
  K. Sugawara、M. Sakuraba, J. Murota
- Organizer
  2nd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Improvement in Negative Differential Conductance Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2008
- Author(s)
  T. Seo, K. Takahashi, M. Sakuraba, J. Murota
- Organizer
  4th Int. SiGe Technology and Device Meeting (ISTDM2008)
- Place of Presentation
  Hsinchu, Taiwan
- Data Source
  KAKENHI-PROJECT-19360002
[Presentation] Capture/Emission Process of Carriers in Interface Traps Observed inthe Transient Charge-Pumping Characteristics of MOSFETs2008
- Author(s)
  T. Tsuchiya, K. Yoshida, M. Sakuraba, and J. Murota
- Organizer
  39th IEEE Semiconductor Interface SpecialistConference (SISC 2008)
- Place of Presentation
  San Diego (USA)
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Fabrication of Hole Resonant Tunneling Diodes Utilizing Nanometer-Order Strained SiGe/Si(100) Heterostructures with High Ge Fraction2008
- Author(s)
  M. Sakuraba、R. Ito、T. Seo, J. Murota
- Organizer
  4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Application of Relaxed Ge/Si(100) by ECR Plasma CVD to Highly Strained B Doped Si2008
- Author(s)
  K. Sugawara、M. Sakuraba, J. Murota
- Organizer
  4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Heavily B Atomic-Layer Doping in Si Epitaxial Growth Using Electron-Cyclotron-Resonance Plasma2008
- Author(s)
  T. Nosaka、M. Sakuraba, J. Murota
- Organizer
  Int. Union of Mat. Res. Soc. - Int. Conf. in Asia 2008 (IUMRS-ICA 2008)
- Place of Presentation
  Nagoya、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Transient Charge-Pumping Characteristics Related to Heterointerface Traps in SiGe/Si-Hetero-Channel pMOSFETs2008
- Author(s)
  T.Tsuchiya, K.Yoshida, M.Sakuraba, and J.Murota
- Organizer
  4th International SiGe Technology and Device Meeting (ISTDM)
- Place of Presentation
  Hsinchu, Taiwan
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] SiGeチャネルMOSトランジスタのホットキャリア効果2008
- Author(s)
  森祐樹, 櫻庭政夫, 室田淳一, 土屋敏章
- Organizer
  応用物理学会中国四国支部2008年度学術講演会
- Place of Presentation
  松山
- Year and Date
  2008-08-02
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Hole Resonant Tunneling Diodes Utilizing High Ge Fraction (x>0.5) Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure with Improved Performance at Higher Temperature above 200K2008
- Author(s)
  K. Takahashi, T. Seo, M. Sakuraba, J. Murota
- Organizer
  4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-19360002
[Presentation] "Transient Charge-Pumping Characteristics Related to Heterointerface Traps in SiGe/Si-Hetero-Channel pMOSFETs,"2008
- Author(s)
  T. Tsuchiya, K. Yoshida, M. Sakuraba, and J. Murota
- Organizer
  4th International SiGe Technology and Device Meeting
- Place of Presentation
  Hsinchu, Taiwan
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] SiGeチャネルMOSトランジスタのホットキャリア効果2008
- Author(s)
  森祐樹, 櫻庭政夫, 室田淳一, 土屋敏章
- Organizer
  応用物理学会中国四国支部2008年度学術講演会
- Place of Presentation
  松山
- Year and Date
  2008-08-02
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Heavily B Atomic-Layer Doping in Si Epitaxial Growth Using Electron-Cyclotron- Resonance Plasma2008
- Author(s)
  T. Nosaka, M. Sakuraba and J. Murota
- Organizer
  Symp. Z : "Material Science and Process Technologies for Advanced Nano-Electronic Devices", Int. Union of Mat. Res. Soc. - Int. Conf. in Asia 2008 (IUMRS-ICA 2008)
- Place of Presentation
  Nagoya, Japan, No.ZO-5
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Fabrication of Hole Resonant Tunneling Diodes Utilizing Nanometer-Order Strained SiGe / Si (100) Heterostructures with High Ge Fraction2008
- Author(s)
  M. Sakuraba
- Organizer
  4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-19360002
[Presentation] SiGeチャネルpMOSFETにおけるホットキャリアストレス中の基板電流変化2008
- Author(s)
  森祐樹, 櫻庭政夫, 室田淳一, 土屋敏章
- Organizer
  第10回IEEE広島支部学生シンポジウム(IEEE HISS)
- Place of Presentation
  広島
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Capture/Emission Process of Carriers in Interface Traps Observed in the Transient Charge-Pumping Characteristics of MOSFETs2008
- Author(s)
  T. Tsuchiya, K. Yoshida, M. Sakuraba, J. Murota
- Organizer
  39th IEEE Semiconductor Interface Specialist Conference (SISC 2008)
- Place of Presentation
  San Diego (USA)
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] SiGeチャネルpMOSFETにおけるホットキャリアストレス中の基板電流変化2008
- Author(s)
  森祐樹, 櫻庭政夫, 室田淳一, 土屋敏章
- Organizer
  第10回IEEE広島支部学生シンポジウム(IEEE HISS)
- Place of Presentation
  広島
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Transient Charge-Pumping Characteristics Related to Heterointerface Traps in SiGe/Si-Hetero-Channel pMOSFETs2008
- Author(s)
  T. Tsuchiya, K. Yoshida, M. Sakuraba, J. Murota
- Organizer
  4th International SiGe Technology and Device Meeting
- Place of Presentation
  Hsinchu, Taiwan
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Fabrication of Hole Resonant Tunneling Diodes Utilizing Nanometer-Order Strained SiGe/Si(100)Heterostructures with High Ge Fraction2008
- Author(s)
  M. Sakuraba
- Organizer
  4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Improvement in Negative Differential Conductance Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction Si/Strained Si1-xGex/Si(100) Heterostructure2008
- Author(s)
  T. Seo、Takahashi, M. Sakuraba, J. Murota
- Organizer
  4th Int. SiGe Technology and Device Meeting (ISTDM2008)
- Place of Presentation
  Hsinchu, Taiwan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Transient Charge-Pumping Characteristics Related to Heterointerface Traps in SiGe/Si-Hetero-Channel pMOSFETs2008
- Author(s)
  T. Tsuchiya, K. Yoshida, M. Sakuraba, J. Murota
- Organizer
  4th International SiGe Technology and Device Meeting
- Place of Presentation
  Hsinchu (Taiwan)
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Fabrication of Hole Resonant Tunneling Diodes Utilizing Nanometer-Order Strained SiGe/Si(100) Heterostructures with High Ge Fraction2008
- Author(s)
  M. Sakuraba, R. Ito, T. Seo, J. Murota
- Organizer
  4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-19360002
[Presentation] Epitaxial Growth of Highly Strained B Doped Si on Relaxed Ge/Si(100)2008
- Author(s)
  K. Sugawara, M. Sakuraba and J. Murota
- Organizer
  Symp. Z : "Material Science and Process Technologies for Advanced Nano-Electronic Devices", Int. Union of Mat. Res. Soc. - Int. Conf. in Asia 2008 (IUMRS-ICA 2008)
- Place of Presentation
  Nagoya, Japan, No. ZP-9.
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] SiGe/SiヘテロチャネルMOSFETにおける過渡チャージポンピング特性2008
- Author(s)
  土屋敏章, 櫻庭政夫, 室田淳一
- Organizer
  電気学会電子材料研究会
- Place of Presentation
  仙台
- Year and Date
  2008-09-27
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Transient Charge-Pumping Characteristics Related to Heterointerface Traps in SiGe/Si-Hetero-Channel pMOSFETs2008
- Author(s)
  T. Tsuchiya, K. Yoshida, M. Sakuraba, J. Murota
- Organizer
  4th International Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Capture/Emission Process of Carriers in Interface Traps Observed in the Transient Charge-Pumping Characteristics of MOSFETs2008
- Author(s)
  T.Tsuchiya, K.Yoshida, M.Sakuraba, and J.Murota
- Organizer
  39th IEEE Semiconductor Interface Specialist Conference (IEEE SISC)
- Place of Presentation
  San Diego, USA
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Transient Charge-Pumping Characteristics Related to Heterointerface Traps in SiGe/Si-Hetero-Channel pMOSFETs2008
- Author(s)
  T. Tsuchiya, K. Yoshida, M. Sakuraba, and J. Murota
- Organizer
  4th International SiGe Technology and Device Meeting
- Place of Presentation
  Hsinchu (Taiwan)
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Heavy B Atomic-Layer Doping Characteristics in Si Epitaxial Growth on B Adsorbed Si(100) by Ultraclean Low-Pressure CVD System2008
- Author(s)
  H.Tanno、M.Sakuraba、B.Tillack, J.Murota
- Organizer
  4th Int.SiGe Technology and Device Meeting (ISTDM2008)
- Place of Presentation
  Hsinchu、Taiwan
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Nitrogen Atomic-Layer Doping in Nanometer-Order Heterostructure of Si/Si_<1-x>Ge_x/Si(100) by Ultraclean Low-Pressure CVD2008
- Author(s)
  T.Kawashima、M.Sakuraba, J.Murota
- Organizer
  Symp.Z : "Material Science and Process Technologies for Advanced Nano-Electronic Devices、Int.Union of Mat.Res.Soc.-Int.Conf.in Asia 2008 (IUMRS-ICA2008)
- Place of Presentation
  Nagoya、Japan
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Atomically Controlled CVD Processing for Future Si-Based Devices2008
- Author(s)
  J.Murota、M.Sakuraba, B.Tillack
- Organizer
  9th Int.Conf.on Solid-State and Integrated-Circuit Technol. (ICSICT 2008)
- Place of Presentation
  Beijing、China(Invited Paper)
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] SiGe/SiヘテロチャネルMOSFETにおける過渡チャージポンピング特性2008
- Author(s)
  土屋敏章, 櫻庭政夫, 室田淳一
- Organizer
  電気学会電子材料研究会
- Place of Presentation
  仙台
- Year and Date
  2008-09-27
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Atomically Controlled Processing in Si-Based CVD Epitaxial Growth2008
- Author(s)
  J.Murota、M.Sakuraba, B.Tillack
- Organizer
  Symp. Z : "Material Science and Process Technologies for Advanced Nano-Electronic Devices"、Int.Union of Materials Research Society-Int.Conf.in Asia 2008 (IUMRS-ICA 2008)
- Place of Presentation
  Nagoya、Japan(Invited Paper)
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Capture/Emission Process of Carriers in Interface Traps Observed in the Transient Charge-Pumping Characteristics of MOSFETs2008
- Author(s)
  T. Tsuchiya, K. Yoshida, M. Sakuraba, J. Murota
- Organizer
  39th IEEE Semiconductor Interface Specialist Conference (SISC 2008)
- Place of Presentation
  San Diego, USA
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Hole Resonant Tunneling Diodes Utilizing High Ge Fraction (x>0. 5) Si/Strained Si1-xGex/Si(100) Heterostructure with Improved Performance at Higher Temperature above 200 K2008
- Author(s)
  K. Takahashi、T. Seo、M. Sakuraba, J. Murota
- Organizer
  4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Change of H-Termination on Wet-Cleaned Si(100) and Ge(100) by Heat-Treatment in H_2 or Ar2008
- Author(s)
  A.Uto、M.Sakuraba、M.Caymax, J.Murota
- Organizer
  4th Int.SiGe Technology and Device Meeting (ISTDM2008)
- Place of Presentation
  Hsinchu、Taiwan
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Atomically Controlled Processing for Impurity Doping in Si-Based CVD Epitaxial Growth2008
- Author(s)
  J.Murota、M.Sakuraba, B.Tillack
- Organizer
  8th Int.Conf.on Atomic Layer Deposition (ALD 2008)
- Place of Presentation
  Bruges、Belgium(Invited Paper)
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] "Capture/Emission Process of Carriers in Interface Traps Observed in the Transient Charge-Pumping Characteristics of MOSFETs,"2008
- Author(s)
  T. Tsuchiya, K. Yoshida, M. Sakuraba, and J. Murota
- Organizer
  39th IEEE Semiconductor Interface Specialist Conference (SISC 2008)
- Place of Presentation
  San Diego, USA
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] "Transient Charge-Pumping Characteristics Related to Heterointerface Traps in SiGe/Si-Hetero-Channel pMOSFETs,"2008
- Author(s)
  T. Tsuchiya, K. Yoshida, M. Sakuraba, and J. Murota
- Organizer
  4th International Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Epitaxial Growth of B Atomic-Layer Doped Si Film on Si(100) Using Electron-Cyclotron-Resonance Ar Plasma2008
- Author(s)
  T. Nosaka、M. Sakuraba, J. Murota
- Organizer
  4th Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Epitaxial Growth of Highly Strained B Doped Si on Relaxed Ge/Si(100)2008
- Author(s)
  K. Sugawara、M. Sakuraba, J. Murota
- Organizer
  Int. Union of Mat. Res. Soc. - Int. Conf. in Asia 2008 (IUMRS-ICA 2008)
- Place of Presentation
  Nagoya、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Local Strain in Si/Si_<0.6>Ge_<0.4>/Si(100) Heterostructures by Stripe-Shape Patterning2007
- Author(s)
  J.Uhm、M.Sakuraba, J.Murota
- Organizer
  5th Int.Conf.Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille、France
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] "High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth,"2007
- Author(s)
  S. Takehiro, M. Sakuraba, T. Tsuchiya, and J. Murota
- Organizer
  5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille, France
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Reliability and instability of a SiGe/Si-hetero-interface in hetero-channel MOSFETs2007
- Author(s)
  T. Tsuchiya, M. Sakuraba, and J. Murota
- Organizer
  Int'l Conf. on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Marseille (France)
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Reliability and Instability of a SiGe/Si-Hetero-Interface In Hetero-Channel MOSFETs2007
- Author(s)
  T.Tsuchiya、M.Sakuraba, J.Murota
- Organizer
  5th Int.Conf.Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille、France(Invited Paper)
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Very Low-Temperature Epitaxial Growth of Silicon and Germanium Using Plasma-Assisted CVD (Invited Paper)2007
- Author(s)
  M. Sakuraba、D. Muto、M. Mori、K. Sugawara、J. Murota
- Organizer
  5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille、France
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Characterization of Temperature-Dependent Hole Resonant Tunneling Properties with High Ge Fraction (x>0. 4) Si/Strained Si1-xGex/Si(100) Heterostructure2007
- Author(s)
  T. Seo、M. Sakuraba, J. Murota
- Organizer
  3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_<1-x>Ge_x Epitaxially Grown on Si(100) (Invited Paper), Symp. E9 : ULSI2007
- Author(s)
  M. Sakuraba, R. Ito, T. Seo, J. Murota
- Organizer
  Process Integration 5 (212th Meeting of the Electrochem. Soc.)
- Place of Presentation
  Washington, DC, USA(Invited Paper)
- Data Source
  KAKENHI-PROJECT-19360002
[Presentation] Very Low-Temperature Epitaxial Growth of Silicon and Germanium Using Plasma-Assisted CVD (Invited Paper)2007
- Author(s)
  M. Sakuraba
- Organizer
  5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille, France
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0.4) Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2007
- Author(s)
  T.Seo、M.Sakuraba, J.Murota
- Organizer
  5th Int.Symp.Control of Semiconductor Interfaces (ISCSI-V)
- Place of Presentation
  Hachioji、Japan
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2007
- Author(s)
  T.Seo、M.Sakuraba, J.Murota
- Organizer
  5th Int.Conf.Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille、France
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] "Reliability and instability of a SiGe/Si-hetero-interface in hetero-channel MOSFETs,"2007
- Author(s)
  T. Tsuchiya, M. Sakuraba, and J. Murota
- Organizer
  5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille, France
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_<1-x>Ge_x Epitaxially Grown on Si(100)2007
- Author(s)
  M. Sakuraba, R. Ito, T. Seo, and J. Murota
- Organizer
  Symp. E9 : ULSI Process Integration 5 (212th Meeting of the Electrochem. Soc.)
- Place of Presentation
  Washington, DC, USA, Abst.No.1283.
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si1-xGex Epitaxially Grown on Si(100) (Invited Paper)2007
- Author(s)
  M. Sakuraba、R. Ito、T. Seo, J. Murota
- Organizer
  Symp. E9: ULSI Process Integration 5 (212th Meeting of the Electrochem. Soc. )
- Place of Presentation
  Washington, DC、USA
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Atomically Controlled Technology for Group IV Semiconductors2007
- Author(s)
  J.Murota、M.Sakuraba, B.Tillack
- Organizer
  4th Int.Workshop on Nanoscale Semiconductor Devices
- Place of Presentation
  Jeju、Korea(Invited Paper)
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Structural Change of Atomic-Order Nitride Formed on Si_<1-x>Ge_x(100) and Ge(100) by Heat Treatment2007
- Author(s)
  N.Akiyama、M.Sakuraba、B.Tillack, J.Murota
- Organizer
  5th Int.Conf.Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille、France
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] "Instability of a SiGe/Si-hetero-interface in hetero-channel MOSFETs due to Joule heating,"2007
- Author(s)
  T. Tsuchiya, M. Sakuraba, and J. Murota
- Organizer
  3rd International Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Reliability and instability of a SiGe/Si-hetero-interface in hetero-channel MOSFETs2007
- Author(s)
  T. Tsuchiya, M. Sakuraba, and J. Murota
- Organizer
  Int'l Conf. on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Marseille(France)
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Instability of a SiGe/Si-hetero-interface in hetero-channel MOSFETs due to Joule heating2007
- Author(s)
  T. Tsuchiya, M. Sakuraba, J. Murota
- Organizer
  3rd International Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] High Ge Fraction Intrinsic SiGe-Heterochannel MOSFETs with Embedded SiGe Source/Drain Electrode Formed by In-Situ Doped Selective CVD Epitaxial Growth2007
- Author(s)
  S.Takehiro、M.Sakuraba、T.Tsuchiya, J.Murota
- Organizer
  5th Int.Conf.Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille、France
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Characterization of Temperature-Dependent Hole Resonant Tunneling Properties with High Ge Fraction (x>0.4) Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2007
- Author(s)
  T. Seo, M. Sakuraba, J. Murota
- Organizer
  3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-19360002
[Presentation] Behavior of N Atoms on Atomic-Order Nitrided Si_<0.5>Ge_<0.5>(100)2007
- Author(s)
  N.Akiyama、M.Sakuraba、B.Tillack, J.Murota
- Organizer
  5th Int.Symp.Control of Semiconductor Interfaces (ISCSI-V)
- Place of Presentation
  Hachioji、Japan
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Self-Limited Growth of Si on B Atomic-Layer Formed Ge(100) by Ultraclean Low- Pressure CVD System2007
- Author(s)
  T.Yokogawa、K.Ishibashi、M.Sakuraba、J.Murota、Y.Inokuchi、Y.Kunii, H.Kurokawa
- Organizer
  5th Int.Symp.Control of Semiconductor Interfaces (ISCSI-V)
- Place of Presentation
  Hachioji、Japan
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_<1-x> Ge_x Epitaxially Grown on Si(100)(Invited Paper)2007
- Author(s)
  M. Sakuraba
- Organizer
  Symp. E9: ULSI Process Integration 5(212th Meeting of the Electrochem. Soc.)
- Place of Presentation
  Washington, DC, USA
- Data Source
  KAKENHI-PROJECT-19360002
[Presentation] Heavily Atomic-Layer Doping of B in Low-Temperature Si Epitaxial Growth on Si(100) by Ultraclean Low-Pressure Chemical Vapor Deposition2007
- Author(s)
  H.Tanno、M.Sakuraba、B.Tillack, J.Murota
- Organizer
  5th Int.Symp.Control of Semiconductor Interfaces (ISCSI-V)
- Place of Presentation
  Hachioji、Japan
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_<1-x> Ge_x Epitaxially Grown on Si (100) (Invited Paper)2007
- Author(s)
  M. Sakuraba
- Organizer
  Symp. E9: ULSI Process Integration 5 (212th Meeting of the Electrochem. Soc.)
- Place of Presentation
  Washington, DC, USA
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Reliability and instability of a SiGe/Si-hetero-interface in hetero-channel MOSFETs2007
- Author(s)
  T. Tsuchiya, M. Sakuraba, J. Murota
- Organizer
  5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille, France
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0.4) Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2007
- Author(s)
  T. Seo, M. Sakuraba, J. Murota
- Organizer
  5th Int. Symp. Control of Semiconductor Interfaces (ISCSI-V)
- Place of Presentation
  Hachioji, Japan
- Data Source
  KAKENHI-PROJECT-19360002
[Presentation] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si_<1-x>Ge_x/Si(100) Heterostructure2007
- Author(s)
  T. Seo, M. Sakuraba, J. Murota
- Organizer
  5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille, France
- Data Source
  KAKENHI-PROJECT-19360002
[Presentation] Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_<1-x>Ge_x Epitaxially Grown on Si(100)(Invited Paper)2007
- Author(s)
  M. Sakuraba
- Organizer
  Symp. E9: ULSI Process Integration5(212th Meeting of the Electrochem. Soc.)
- Place of Presentation
  Washington, DC, USA
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si1-xGex/Si(100) Heterostructure2007
- Author(s)
  T. Seo、M. Sakuraba, J. Murota
- Organizer
  5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille, France
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Very Low-Temperature Epitaxial Growth of Silicon and Germanium Using Plasma-Assisted CVD2007
- Author(s)
  M. Sakuraba, D. Muto, M. Mori, K. Sugawara and J. Murota
- Organizer
  5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille, France, No.S1-I3.
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0. 4) Si/Strained Si1-xGex/Si(100) Heterostructure2007
- Author(s)
  T. Seo、M. Sakuraba, J. Murota
- Organizer
  5th Int. Symp. Control of Semiconductor Interfaces (ISCSI-V)
- Place of Presentation
  Hachioji, Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Si Epitaxial Growth on Self-Limitedly B Adsorbed Si_<1-x>Ge_x(100) by Ultraclean Low-Pressure CVD System2007
- Author(s)
  K.Ishibashi、M.Sakuraba、J.Murota、Y.Inokuchi、Y.Kunii, H.Kurokawa
- Organizer
  5th Int.Conf.Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille、France
- Data Source
  KAKENHI-PROJECT-19206032
[Presentation] High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth2007
- Author(s)
  S. Takehiro, M. Sakuraba, T. Tsuchiya, J. Murota
- Organizer
  5th International Conference on Silicon Epitaxy and Heterostructures (ICSI-5)
- Place of Presentation
  Marseille, France
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction Si/Strained Si1-xGex Heterostructures on Si(100) Grown by Low-Temperature Ultraclean LPCVD2006
- Author(s)
  T. Seo、M. Sakuraba, J. Murota
- Organizer
  Abstracts of 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] Epitaxial Growth of Group IV Semiconductor in ECR Plasma Enhanced CVD2006
- Author(s)
  M. Sakuraba、D. Muto、M. Mori、K. Sugawara、J. Murota
- Organizer
  Abstracts of 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] The Instability of the SiGe/Si-Hetero-Interface in Hetero-MOSFETs due to Bias Stress2006
- Author(s)
  T.Tsuchiya, S.Mishima, M.Sakuraba, and J.Murota
- Organizer
  37th IEEE Semiconductor Interface Specialist Conference (IEEE SISC)
- Place of Presentation
  San Diego, USA
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices2006
- Author(s)
  T. Tsuchiya, M. Sakuraba, J. Murota
- Organizer
  2006 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD2006)
- Place of Presentation
  Tohoku Univ., Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] "Fabrication of Sub-100-nm Gate-Length SiGe-Heterochannel MOSFETs with In-Situ Doped Selectively Epitaxial SiGe Sourcs/Drain,"2006
- Author(s)
  S. Takehiro, S. Kawada, M. Sakuraba, T. Tsuchiya, and J. Murota
- Organizer
  2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Hot-Carrier-Degradation of Hetero-Interface in SiGe/Si-Hetero-MOSFETs2006
- Author(s)
  T. Tsuchiya, M. Sakuraba, J. Murota
- Organizer
  2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] Fabrication of Sub-100-nm Gate-Length SiGe-Heterochannel MOSFETs with In-Situ Doped Selectively Epitaxial SiGe Sourcs/Drain2006
- Author(s)
  S. Takehiro, S. Kawada, M. Sakuraba, T. Tsuchiya, J. Murota
- Organizer
  2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] The Instability of the SiGe/Si-Hetero-Interface in Hetero-MOSFETs due to Bias Stress2006
- Author(s)
  T. Tsuchiya, S. Mishima, M. Sakuraba, J. Murota
- Organizer
  37th IEEE Semiconductor Interface Specialist Conference (SISC 2006)
- Place of Presentation
  San Diego, USA
- Data Source
  KAKENHI-PROJECT-18063016
[Presentation] "The Instability of the SiGe/Si-Hetero-Interface in Hetero-MOSFETs due to Bias Stress,"2006
- Author(s)
  T. Tsuchiya, S. Mishima, M. Sakuraba, and J. Murota
- Organizer
  37th IEEE Semiconductor Interface Specialist Conference (SISC 2006)
- Place of Presentation
  San Diego, USA
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] Highly Strained-Si/Relaxed-Ge Epitaxial Growth on Si(100) by ECR Plasma CVD and Evaluation of Thermal Stability2006
- Author(s)
  K. Sugawara、M. Sakuraba, J. Murota
- Organizer
  Abstracts of 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai、Japan
- Data Source
  KAKENHI-PROJECT-18063001
[Presentation] "Hot-Carrier-Degradation of Hetero-Interface in SiGe/Si-Hetero-MOSFETs,"2006
- Author(s)
  T. Tsuchiya, M. Sakuraba, and J. Murota
- Organizer
  2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18360174
[Presentation] "Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices,"2006
- Author(s)
  T. Tsuchiya, M. Sakuraba, and J. Murota
- Organizer
  2006 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices (AWAD2006)
- Place of Presentation
  Tohoku Univ., Sendai, Japan
- Data Source
  KAKENHI-PROJECT-18360174

1. MUROTA Junichi (70182144)

# of Collaborated Projects: 18 results

# of Collaborated Products: 198 results
2. MATSUURA Takashi (60181690)

# of Collaborated Projects: 10 results

# of Collaborated Products: 0 results
3. TAKEHIRO Shinobu (70344736)

# of Collaborated Projects: 4 results

# of Collaborated Products: 15 results
4. 佐藤茂雄 (10282013)

# of Collaborated Projects: 3 results

# of Collaborated Products: 2 results
5. TSUCHIYA Toshiaki (20304248)

# of Collaborated Projects: 2 results

# of Collaborated Products: 63 results
6. WASHIO KATSUYOSHI (20417017)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. MEGURO Toshiyasu (50182150)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
8. MISHIMA Seiji

# of Collaborated Projects: 2 results

# of Collaborated Products: 10 results
9. YOSHIDA Keiichi

# of Collaborated Projects: 2 results

# of Collaborated Products: 12 results
10. MORI Yuki

# of Collaborated Projects: 2 results

# of Collaborated Products: 4 results
11. 白木靖寛 (00206286)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 宇佐美徳隆 (20262107)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 黄晋二 (50323663)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. 尾鍋研太郎 (50204227)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. 中川清和 (40324181)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. 末光眞希 (00134057)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. 長田俊人 (00192526)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. 川島知之 (40708450)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. 山本英明 (10552036)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. MOGAMI Tohru

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
21. MORIMURA Yuta

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. 片山竜二

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
23. 山本裕司

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

SAKURABA Masao 櫻庭 政夫

桜庭 政夫 サクラバ マサオ

櫻場 政夫 サクラバ マサオ

Research Projects

Research Products

Co-Researchers

３Ｃ／４Ｈヘテロエピ基板を用いた高信頼・高移動度ＳｉＣパワーＭＯＳＦＥＴ製作Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Experimental Study of Crystal Structure Transformation by Low-Energy Plasma Induced Reconstruction in Si Ultrathin FilmPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Process development for high-performance highly-strained quantum-heterostructure resonant-tunneling devices of group-IV semiconductorsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Group IV Semiconductor Quantum Device Fabrication for Room Temperature OperationPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of Atomically Controlled Plasma Processing for GroupIV Quantum Device FabricationPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Electronicband modulation and formation of quantum tunneling structures by atomic-layer control of group-IV semiconductorsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

SAKURABA Masao 櫻庭政夫

桜庭政夫サクラバマサオ

櫻場政夫サクラバマサオ