Ono Kouichi 斧高一

… Alternative Names

ONO Kouichi 斧高一

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Researcher Number	30311731
Other IDs
External Links
Affiliation (Current)	2025: 大阪大学, 接合科学研究所, 招へい教授
Affiliation (based on the past Project Information) *help	2017: 京都大学, 工学(系)研究科(研究院), 教授 2017: 大阪大学, 接合科学研究所, 特任教授 2016: 京都大学, 工学研究科, 名誉教授 2015: 京都大学, 大学院工学研究科, 教授 2012 – 2015: 京都大学, 工学(系)研究科(研究院), 教授 … More 2013: 京都大学, 大学院・工学研究科, 教授 2013: 京都大学, 工学研究科, 教授 2001 – 2011: 京都大学, 工学研究科, 教授 2010: 京都大学, 大学院・工学研究科, 教授 2004 – 2005: 京都大学, 大学院・工学研究科, 教授 1999: 京都大学, 大学院・工学研究科, 教授 1999: Kyoto University, Graduate School of Engineering, Professor, 工学研究科, 教授 Less
Review Section/Research Field	Principal Investigator Plasma science / Science and Engineering / Plasma electronics / プラズマ理工学 / Science and Engineering / Aerospace engineering Except Principal Investigator Material processing/treatments / Material processing/Microstructural control engineering / Material processing/treatments / Applied physics, general / Composite materials/Surface and interface engineering / Science and Engineering
Keywords	Principal Investigator 超微細加工形状 / 半導体超微細化 / 表面・界面物性 / プラズマ化学 / プラズマ加工 / プラズマエッチング / 反応粒子輸送 / MEMS / マイクロ波励起プラズマ / Etching … More / Plasma Processing / エッチング / プラズマプロセス / プラズマ・表面過程揺動 / 軸対称表面波励起プラズマ / マイクロノズル / マイクロプラズマ / 半導体マイクロ波素子 / プラズマスラスター / 微細加工形状 / Transport of Reactive Particles / Etched Profiles / Semiconductor Fabrication / Surface and Interfaces / Plasma Chemistry / Plasma Etching / Chemical Vapor Deposition / High-Density Plasma / Feature Profile Evolution / Surface Reaction / Particle Transport / Microstructure / 化学気相堆積 / 高密度プラズマ / 加工形状進展 / 表面反応過程 / 粒子輸送過程 / 超微細構造 / 表面ラフネス / 反応生成物 / 超微細加工技術 / 高温反応場 / 亜音速・超音速流れ場 / 高温反応揚 / 亜音速・超音速流れ揚 / プラズマスラスタ / 超音速流れ / 超小型プラズマスラスター / 超小型電気推進 / 表面波励起プラズマ / 電気推進 … More Except Principal Investigator プラズマ / 電気容量 / 欠陥 / シリコン / 誘電率 / ナノ材料 / プラズマプロセス / 分子動力学 / 欠陥層 / トランジスタ / 材料加工・処理 / 結晶・組成制御 / plasma surface process / non-equilibrium process / ultra-short pulse laser / phonon excitation / ultra-shallow junction / ミリ波照射 / 非平衡プラズマ照射 / プラズマ処理 / 非平衡プロセス / 超短パルスレーザー / フォノン励起 / 半導体極浅接合 / plasma-based ion implantation / large-volume plasma source / low inductance antenna / internal antenna / inductively coupled plasmas / プラズマイオン注入プロセス / 大容積プラズマ / 低インダクタンス / 内部アンテナ / 誘導結合プラズマ / Two-dimensional Rate Monitoring / Two-dimensional Shape Monitoring / In-process Monitoring / Microscopic Interferometry / Microstructure Etching / Plasma Processing / 二次元加工速度診断 / 二次元加工形状診断 / インプロセス・モニタリング / 顕微干渉分光法 / 微細構造エッチング / 有機材料 / 有機膜 / 電子 / 表面・界面 / 変調反射率分光 / 分子動力学法 / 欠陥構造 / 極低消費電力 / 表面・界面制御 / 揺らぎ / 相互作用 / ナノ粒子 / コンビナトリアル摂動解析 / プラズマ局所反応場 / ナノ界面制御 / プラズマナノテクノロジー / ボトムアッププロセス / トップダウンプロセス / 相互作用ゆらぎ / ナノ界面 / 界面層 / レーザー / 誘電関数 / 表面界面改質 Less

Plasma-Induced Formation of Nanoscale Ripple Structures on SurfacesPrincipal Investigator
- Principal Investigator
  
  ONO Kouichi
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Plasma electronics
- Research Institution
  Osaka University
  Kyoto University
Study of structure modification of boron nitride films by plasma exposure - the effect of ion energy distribution function
- Principal Investigator
  
  Eriguchi Koji
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Material processing/Microstructural control engineering
- Research Institution
  Kyoto University
Study of plasma-solid surface interaction control for future organic devices with the optimized dielectric constants
- Principal Investigator
  
  ERIGUCHI Koji
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Composite materials/Surface and interface engineering
- Research Institution
  Kyoto University
Study of defect-related dielectric function change and the process optimiztion framework for ultimately low power systems
- Principal Investigator
  
  ERIGUCHI Koji
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Material processing/treatments
- Research Institution
  Kyoto University
Frontier science of interactions between plasmas and nano-interfaces
- Principal Investigator
  
  SHIRATANI Masaharu
- Project Period (FY)
  2009 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Kyushu University
Plasma-Surface Interactions during Plasma Etching for Next-Generation Nanoscale Device FabricationPrincipal Investigator
- Principal Investigator
  
  ONO Kouichi
- Project Period (FY)
  2009 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Kyoto University
Plasma-Surface Interactions for Nanometer-scale Plasma Etching ProcessesPrincipal Investigator
- Principal Investigator
  
  ONO Kouicti
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Plasma science
- Research Institution
  Kyoto University
Plasma process design for material surface treatment in the nano-scale regime utilizing dielectric-constant analysis techniques
- Principal Investigator
  
  ERIGUCHI Koji
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Material processing/treatments
- Research Institution
  Kyoto University
マイクロプラズマスラスタの研究開発:高温反応場と高速流れ場の競合現象の解明と制御Principal Investigator
- Principal Investigator
  
  斧高一
- Project Period (FY)
  2006 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Kyoto University
A Study of Plasma Chemistry in the Gas Phase and on Surfaces during Plasma Etching in Chlorine-and Bromine-Containing PlasmasPrincipal Investigator
- Principal Investigator
  
  ONO Kouichi
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Plasma science
- Research Institution
  KYOTO UNIVERSITY
マイクロプラズマスラスターの研究開発Principal Investigator
- Principal Investigator
  
  斧高一
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Kyoto University
Mechanism Investigations and Control of Phonon-Excitation Anneal Process for Ultra-Shallow Junction Formation
- Principal Investigator
  
  SETSUHARA Yuichi
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Material processing/treatments
- Research Institution
  Osaka University
  Kyoto University
表面波励起プラズマを用いた超小型プラズマスラスターの研究開発Principal Investigator
- Principal Investigator
  
  斧高一
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Aerospace engineering
- Research Institution
  Kyoto University
A Study of the Particle Transport and Surface Reactions in Microstructures on Substrates during Plasma ProcessingPrincipal Investigator
- Principal Investigator
  
  ONO Kouichi
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  プラズマ理工学
- Research Institution
  Kyoto University
Development of Plasma Technologies for Advanced Plasma-Based Ion Implantation Processes Using Internal-Antenna-Driven Large-Volume RF Plasma Sources
- Principal Investigator
  
  SETSUHARA Yuichi
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Material processing/treatments
- Research Institution
  KYOTO UNIVERSITY
Process Diagnostics in High-Aspect-Ratio Patterns by Microscopic Interferometry
- Principal Investigator
  
  TACHIBANA Kunihide
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied physics, general
- Research Institution
  KYOTO UNIVERSITY

[Book] プラズマプロセス技術 (第4章ナノエッチング技術, 分担執筆)2017
- Author(s)
  斧高一，江利口浩二，鷹尾祥典
- Total Pages
  273
- Publisher
  森北出版
- Data Source
  KAKENHI-PROJECT-15H03582
[Book] "High-k 膜のドライエッチング", 「ナノエレクトロニクスにおける絶縁超薄膜技術－成膜技術と膜・界面の物性科学－」, 第5編, 第4章 (分担執筆).2012
- Author(s)
  斧高一
- Publisher
  エヌ・ティー・エス社
- Data Source
  KAKENHI-PLANNED-21110008
[Book] High-k 膜のドライエッチングナノエレクトロニクスにおける絶縁超薄膜技術-成膜技術と膜・界面の物性科学-, 第5編, 第4章2012
- Author(s)
  斧高一(分担執筆)
- Publisher
  エヌ・ティー・エス社
- Data Source
  KAKENHI-PLANNED-21110008
[Book] 次世代ナノエレクトロニクスにおける絶縁超薄膜技術と膜・界面の物性科学2012
- Author(s)
  斧高一
- Publisher
  エヌ・ティー・エス社(印刷中)
- Data Source
  KAKENHI-PROJECT-21340169
[Book] プラズマエッチングにおける表面反応機構マイクロ・ナノデバイスのエッチング技術式田光宏他監修, 第二編, 第2章2009
- Author(s)
  斧高一(分担執筆)
- Publisher
  シーエムシー出版
- Data Source
  KAKENHI-PLANNED-21110008
[Book] 「マイクロ・ナノデバイスのエッチング技術」,式田光宏・佐藤一雄・田中浩監修第二編,第2章"プラズマエッチングにおける表面反応機構"2009
- Author(s)
  斧高一[分担執筆]
- Publisher
  シーエムシー出版
- Data Source
  KAKENHI-PLANNED-21110008
[Book] 「2009半導体テクノロジー大全」第4編, 第4章, 4節 "高誘電体/電極材料エッチング技2009
- Author(s)
  斧高一, 江利口浩二 [分担執筆]
- Total Pages
  684
- Publisher
  電子ジャーナル社
- Data Source
  KAKENHI-PROJECT-21340169
[Book] 2009半導体テクノロジー大全2009
- Author(s)
  斧高一, 江利口浩二
- Publisher
  電子ジャーナル社
- Data Source
  KAKENHI-PROJECT-21340169
[Book] 「2007半導体テクノロジー大全」第4編第4章第5節"高誘電体/電極材料エッチング技術"2007
- Author(s)
  斧高一, 江利口浩二
- Publisher
  電子ジャーナル社(印刷中)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17340172
[Book] 2007半導体テクノロジー大全(第4編第4章第5節"高誘電体/電極材料エッチング技術")2007
- Author(s)
  斧高一, 江利口浩二(分担執筆)
- Publisher
  電子ジャーナル社(印刷中)
- Data Source
  KAKENHI-PROJECT-17340172
[Book] マイクロ・ナノプラズマ技術とその産業応用(橘邦英, 寺嶋和夫監修)2006
- Author(s)
  斧高一(分担執筆)
- Publisher
  シーエムシー出版
- Data Source
  KAKENHI-PROJECT-18030007
[Book] Surface Science : Fundamentals and Applications [in Japanese](edited by The Surface Science Society of Japan)2004
- Author(s)
  K.Ono
- Publisher
  NTS, Tokyo
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14380209
[Book] エッチング、「新改訂・表面科学の基礎と応用」第3編、第1章、第3節、第6項(日本表面科学会編)2004
- Author(s)
  斧高一
- Publisher
  エヌ・ティー・エス社
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14380209
[Journal Article] Surface morphology evolution during plasma etching: roughening, smoothing and ripple formation2017
- Author(s)
  K. Ono, N. Nakazaki, H. Tsuda, Y. Takao, and K. Eriguchi
- Journal Title
  
  J. Phys. D: Appl. Phys.
  
  Volume: 50 Issue: 41 Pages: 414001-414001
- DOI
  10.1088/1361-6463/aa8523
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03582
[Journal Article] Optical model for spectroscopic ellipsometry analysis of plasma-induced damage to SiOC films2017
- Author(s)
  Kentaro Nishida, Kouichi Ono, and Koji Eriguchi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 6S2 Pages: 06HD01-06HD01
- DOI
  10.7567/jjap.56.06hd01
- NAID
  210000147960
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H04159
[Journal Article] Time-dependent dielectric breakdown characterizations of interlayer dielectric damage induced during plasma processing2017
- Author(s)
  Kengo Shinohara, Kentaro Nishida, Kouichi Ono, and Koji Eriguchi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 6S2 Pages: 06HD03-06HD03
- DOI
  10.7567/jjap.56.06hd03
- NAID
  210000147962
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H04159
[Journal Article] Surface smoothing during plasma etching of Si in Cl22016
- Author(s)
  N. Nakazaki, H. Matsumoto, H. Tsuda, Y. Takao, K. Eriguchi, and K. Ono
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 109 Issue: 20
- DOI
  10.1063/1.4967474
- NAID
  120005893556
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03582
[Journal Article] Characterization of plasma process-induced latent defects in surface and interface layer of Si substrate2015
- Author(s)
  Y. Nakakubo, K. Eriguchi, K. Ono
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 4 Issue: 6 Pages: N5077-N5083
- DOI
  10.1149/2.0121506jss
- NAID
  120005756254
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25630293
[Journal Article] Influence of microwave annealing on optical and electrical properties of plasma-induced defect structures in Si substrate2015
- Author(s)
  T. Iwai, K. Eriguchi, S. Yamauchi, N. Noro, J. Kitagawa, K. Ono
- Journal Title
  
  J. Vac. Sci. Technol. A
  
  Volume: 33 Issue: 6 Pages: 061403-061403
- DOI
  10.1116/1.4927128
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25630293
[Journal Article] Molecular dynamics simulations of Si etching in Cl- and Br-based plasmas: Cl+ and Br+ ion incidence in the presence of Cl and Br neutrals2015
- Author(s)
  N. Nakazaki, Y. Takao, K. Eriguchi, and K. Ono
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 118 Issue: 23
- DOI
  10.1063/1.4937449
- NAID
  120005694187
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03582, KAKENHI-PROJECT-15J04793
[Journal Article] プラズマ・固体表面界面反応制御－表面ラフネスとリップルの形成機構と制御－2015
- Author(s)
  斧高一
- Journal Title
  
  応用物理
  
  Volume: 84 Pages: 895-902
- NAID
  130007718669
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15H03582
[Journal Article] Impacts of plasma process-induced damage on MOSFET parameter variability and reliability2015
- Author(s)
  K. Eriguchi, K. Ono
- Journal Title
  
  Microelectronics Reliability
  
  Volume: 55 Issue: 9-10 Pages: 1464-1470
- DOI
  10.1016/j.microrel.2015.07.004
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25630293
[Journal Article] Surface roughening and rippling during plasma etching of Si : Numerical investigations and a comparison with experiments2014
- Author(s)
  H.Tsuda, N.Nakazaki, Y.Takao, K.Eriguchi, and K.Ono
- Journal Title
  
  J. Vac. Sci. Technol.
  
  Volume: B 32 Issue: 3
- DOI
  10.1116/1.4874309
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] Molecular dynamics simulations of silicon chloride ion incidence during Si etching in Cl-based plasmas2014
- Author(s)
  N.Nakazaki, Y.Takao, K.Eriguchi, and K.Ono
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 5 Pages: 056201-056201
- DOI
  10.7567/jjap.53.056201
- NAID
  210000143754
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] Effects of plasma-induced charging damage on random telegraph noise in metal-oxide-semiconductor field- effect transistors with SiO 2 and high-k gate dielectrics2014
- Author(s)
  M. Kamei, Y. Takao, K. Eriguchi, K. Ono
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 3S2 Pages: 03DF02-03DF02
- DOI
  10.7567/jjap.53.03df02
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360321
[Journal Article] Decomposition of methyl orange using pulsed discharge plasma at atmospheric pressure: Effect of different electrodes2014
- Author(s)
  Yui Hayashi, Wahyudiono, Siti Machmudah, Noriharu Takada, Hideki Kanda, Koichi Sasaki, and Motonobu Goto
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 1 Pages: 10212-10212
- DOI
  10.7567/jjap.53.010212
- NAID
  210000143224
- Peer Reviewed
- Data Source
  KAKENHI-ORGANIZER-21110001, KAKENHI-PLANNED-21110004, KAKENHI-PLANNED-21110009, KAKENHI-PROJECT-21246119
[Journal Article] Improved hardness and electrical property of c-BN thin films by magnetically enhanced plasma ion plating technique2014
- Author(s)
  M. Noma, K. Eriguchi, Y. Takao, N. Terayama, K. Ono
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 3S2 Pages: 03DB02-03DB02
- DOI
  10.7567/jjap.53.03db02
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360321, KAKENHI-PROJECT-25630293
[Journal Article] Effects of straggling of incident ions on plasma-induced damage creation in "fin"-type field-effect transistors2014
- Author(s)
  K. Eriguchi, A. Matsuda, Y. Takao, K. Ono
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 53 Issue: 3S2 Pages: 03DE02-03DE02
- DOI
  10.7567/jjap.53.03de02
- NAID
  210000143495
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360321, KAKENHI-PROJECT-25630293
[Journal Article] Characteristics of optical emission intensities and bubblelike phenomena induced by laser ablation in supercritical fluids2014
- Author(s)
  Noriharu Takada, Siti Machmudah, Hiroshi Goto, Wahyudiono, Motonobu Goto, and Koichi Sasaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 1 Pages: 10213-10213
- DOI
  10.7567/jjap.53.010213
- NAID
  210000143225
- Peer Reviewed
- Data Source
  KAKENHI-ORGANIZER-21110001, KAKENHI-PLANNED-21110004, KAKENHI-PLANNED-21110009, KAKENHI-PROJECT-21246119
[Journal Article] μ-Photoreflectance Spectroscopy for Microscale Monitoring of PlaBsma-induced Physical Damage on Si Substrate2014
- Author(s)
  A. Matsuda, Y. Nakakubo, Y. Takao, K. Eriguchi, K. Ono
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 3S2 Pages: 03DF01-03DF01
- DOI
  10.7567/jjap.53.03df01
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360321
[Journal Article] Surface roughening and rippling during plasma etching of Si: Numerical investigations and a comparison with experiments2014
- Author(s)
  H. Tsuda, N. Nakazaki, Y. Takao, K. Eriguchi, and K. Ono
- Journal Title
  
  J. Vac. Sci. Technol. B
  
  Volume: 32
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] プラズマナノ加工における表面ラフネスとリップル形成機構2013
- Author(s)
  斧高一, 津田博隆, 中崎暢也, 鷹尾祥典, 江利口浩二
- Journal Title
  
  表面科学
  
  Volume: 34 Pages: 528-534
- NAID
  10031202796
- URL
  https://www.jstage.jst.go.jp/browse/jsssj/34/10/_contents/-char/ja/
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] Modeling and Simulation of Nanoscale Surface Rippling during Plasma Etching of Si under Oblique Ion Incidence2012
- Author(s)
  Hirotaka Tsuda, Yoshinori Takao, Koji Friguchi Kouichi Onc
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 51 Issue: 8S1 Pages: 08HC01-08HC01
- DOI
  10.1143/jjap.51.08hc01
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J01415, KAKENHI-PLANNED-21110008, KAKENHI-PROJECT-23360321
[Journal Article] Effect of capacitive coupling in a miniature inductively coupled plasma source2012
- Author(s)
  Y.Takao, K.Eriguchi, and K.Ono
- Journal Title
  
  J. Appl. Phys
  
  Volume: 112 Issue: 9 Pages: 93306-93306
- DOI
  10.1063/1.4764333
- NAID
  120004920433
- URL
  http://hdl.handle.net/2433/161047
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008, KAKENHI-PROJECT-23360321, KAKENHI-PROJECT-23760769
[Journal Article] High-k MOSFET performance degradation by plasma process-induced charging damage2012
- Author(s)
  K. Eriguchi, M. Kamei, Y. Takao, K. Ono
- Journal Title
  
  2012 IEEE International Integrated Reliability Workshop Final Report
  
  Pages: 80-84
- DOI
  10.1109/iirw.2012.6468925
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360321
[Journal Article] Particle Simulations of Sheath Dynamics in Low Pressure Capacitively Coupled Argon Plasma Discharges2011
- Author(s)
  Y.Takao, K.Matsuoka, K.Eriguchi, and K.Ono
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 50 Issue: 8S1 Pages: 08JC02-08JC02
- DOI
  10.1143/jjap.50.08jc02
- NAID
  210000071066
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008, KAKENHI-PROJECT-21340169
[Journal Article] Trade-Off Relationship between Si Recess and Defect Density Formed by Plasma-Induced Damage in Planar Metal-Oxide-Semiconductor Field-Effect Transistors and the Optimization Methodology2011
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys. 50(掲載予定)
- NAID
  210000071116
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Three-dimensional Atomic-scale Cellular Model and Feature Profile Evolution during Si Etching in Chlorine-based Plasmas : Analysis of Profile Anomalies and Surface Roughness2011
- Author(s)
  H.Tsuda, H.Miyata, Y.Takao, K.Eriguchi, K.Ono
- Journal Title
  
  Jpn.A.Appl.Phys.
  
  Volume: Vo.50, No.7 (in press)
- NAID
  210000071082
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21340169
[Journal Article] Particle Simulations of Sheath Dynamics in Low Pressure Capacitively Coupled Argon Plasma Discharges2011
- Author(s)
  Y.Takao, K.Matsuoka, K.Eriguchi, K.Ono
- Journal Title
  
  Jpn.A.AppL.Phys.
  
  Volume: Vo.50, No.7 (in press)
- NAID
  210000071066
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21340169
[Journal Article] Three-dimensional Atomic-scale Cellular Model and Feature Profile Evolution during Si Etching in Chlorine-based Plasmas : Analysis of Profile Anomalies and Surface Roughness2011
- Author(s)
  H. Tsuda, H. Miyata, Y. Takao, K. Eriguchi, and K. Ono
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50
- NAID
  210000071082
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21340169
[Journal Article] Modeling of plasma-induced damage and its impacts on parameter variations in advanced electronic devices2011
- Author(s)
  K.Eriguchi, Y.Takao, and K.Ono
- Journal Title
  
  J. Vac. Sci. Technol
  
  Volume: A29 Issue: 4 Pages: 41303-41303
- DOI
  10.1116/1.3598382
- NAID
  120003133618
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008, KAKENHI-PROJECT-23360321
[Journal Article] Model for Effects of Rf Bias Frequency and Waveform on Si Damaged-Layer Formation during Plasma Etching2011
- Author(s)
  K.Eriguchi, Y.Takao, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys. 50(掲載予定)
- NAID
  210000071080
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Model for Effects of Rf Bias Frequency and Waveform on Si Damaged-Layer Formation during Plasma Etching2011
- Author(s)
  K.Eriguchi, Y.Takao, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 50 Issue: 8S1 Pages: 08JE04-08JE04
- DOI
  10.1143/jjap.50.08je04
- NAID
  210000071080
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360321
[Journal Article] Molecular Dynamics Analysis of the Formation of Surface Roughness during Si Etching in Chlorine-based Plasmas2011
- Author(s)
  Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, Kouichi Ono
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50 Issue: 8S2 Pages: 08KB02-08KB02
- DOI
  10.1143/jjap.50.08kb02
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J01415, KAKENHI-PLANNED-21110008
[Journal Article] Comparative study of plasma-charging damage in high-k dielectric and P-N junction and their effects on off-state leakage current of metal-oxide-semiconductor field-effect transistors2011
- Author(s)
  M.Kamei, Y.Takao, K.Eriguchi, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys 50(掲載予定)
- NAID
  210000071117
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy2011
- Author(s)
  Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, Kouichi Ono
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50 Issue: 8S2 Pages: 08KD03-08KD03
- DOI
  10.1143/jjap.50.08kd03
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J01382, KAKENHI-PROJECT-23360321
[Journal Article] Particle Simulations of Sheath Dynamics in Low Pressure Capacitively Coupled Argon Plasma Discharges2011
- Author(s)
  Y. Takao, K. Matsuoka, K. Eriguchi, and K. Ono
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50
- NAID
  210000071066
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21340169
[Journal Article] Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in high-k Metal-Oxide- Semiconductor Field-Effect Transistor2011
- Author(s)
  K. Eriguchi, M. Kamei, Y. Takao, K. Ono
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50 Issue: 10S Pages: 10PG02-10PG02
- DOI
  10.1143/jjap.50.10pg02
- NAID
  210000071431
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23360321
[Journal Article] Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy2011
- Author(s)
  A.Matsuda , Y.Nakakubo, Y.Takao, K.Eriguchi, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys 50(掲載予定)
- NAID
  210000071115
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Three-dimensional Atomic-scale Cellular Model and Feature Profile Evolution during Si Etching in Chlorine-based Plasmas : Analysis of Profile Anomalies and Surface Roughness2011
- Author(s)
  Hirotaka Tsuda, Hiroki Miyata, Yoshinori Takao, Koji Eriguchi, Kouichi Ono
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50 Issue: 8S1 Pages: 08JE06-08JE06
- DOI
  10.1143/jjap.50.08je06
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J01415, KAKENHI-PLANNED-21110008
[Journal Article] Atomic-scale cellular model and profile simulation of Si etching : Formation of surface roughness and residue2010
- Author(s)
  H.Tsuda, M.Mori, Y.Takao, K.Eriguchi, and K.Ono
- Journal Title
  
  Thin Solid Films
  
  Volume: 518 Issue: 13 Pages: 3475-3480
- DOI
  10.1016/j.tsf.2009.11.043
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] Plasma-surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication : A numerical and experimental study2010
- Author(s)
  K.Ono, H.Ohta, and K.Eriguchi
- Journal Title
  
  Thin Solid Films
  
  Volume: 518 Issue: 13 Pages: 3461-3468
- DOI
  10.1016/j.tsf.2009.11.030
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] Atomic-scale cellular model and profile simulation of Si etching : Formation of surface roughness and residue2010
- Author(s)
  H.Tsuda, M.Mori, Y.Takao, K.Friguchi, K.Ono
- Journal Title
  
  Thin Solid Films Vol.518
  
  Pages: 3475-3480
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] Plasma-surface interactions for advanced plasma etching processes in nanoscale ULSI device fabrication : A numerical and experimental study2010
- Author(s)
  K.Ono, H.Ohta, K.Eriguchi
- Journal Title
  
  Thin Solid Films Vol.518
  
  Pages: 3461-3468
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] Two-dimensional particle-in-cell Monte Carlo simulation of a miniature inductively coupled plasma source2010
- Author(s)
  Y.Takao, N, Kusaba, K.Eriguchi, and K.Ono
- Journal Title
  
  J. Appl. Phys
  
  Volume: 108 Issue: 9
- DOI
  10.1063/1.3506536
- NAID
  120005553877
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] Modeling of Ion-Bombardment Damage on Si Surfaces for In-Line Analysis2010
- Author(s)
  A.Matsuda, Y.Nakakubo, M.Kamei, Y.Takao, K.Eriguchi, K.Ono
- Journal Title
  
  Thin Solid Films 518
  
  Pages: 3481-3486
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] 先端エッチングプロセスのモデリングと体系化2010
- Author(s)
  斧高一
- Journal Title
  
  化学と工業
  
  Volume: 61 Pages: 457-465
- Data Source
  KAKENHI-PROJECT-21340169
[Journal Article] Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates2010
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, Y.Takao, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys
- NAID
  40017116117
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring2010
- Author(s)
  Y.Nakakubo, A.Matsuda, M.Fukasawa, Y.Takao, T.Tatsumi, K.Eriguchi, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys 49
- NAID
  210000069055
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] 先端プラズマエッチングプロセスのモデリングと体系化2010
- Author(s)
  斧高一
- Journal Title
  
  化学工業
  
  Volume: Vol.61, No.6 Pages: 457-465
- NAID
  40017136560
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21340169
[Journal Article] Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates2010
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, Y.Takao, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys 49
  
  Pages: 56203-56203
- NAID
  40017116117
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Threshold Voltage Instability Induced by Plasma Process Damage in Advanced MOSFETs2010
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] 先端プラズマエッチングプロセスのモデリングと体系化2010
- Author(s)
  斧高一
- Journal Title
  
  化学工業
  
  Volume: 61 Pages: 457-465
- NAID
  40017136560
- URL
  http://www.kako-sha.co.jp/2010contentskagaku.htm
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] Threshold Voltage Instability Induced by Plasma Process Damage in Advanced Metal-Oxide-Semiconductor Field-Effect Transistors2010
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 49
- NAID
  210000069053
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced MOSFETs2010
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys 49
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Optical and Electrical Characterization of Hydrogen-Plasma-Damaged Silicon Surface Structures and Its Impact on In-line Monitoring2010
- Author(s)
  Y.Nakakubo, A.Matsuda, M.Fukasawa, Y.Takao, T.Tatsumi, K.Eriguchi, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 49
- NAID
  210000069055
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Atomic-scale cellular model and profile simulation of Si etching : Analysis of profile anomalies and microscopic uniformity2010
- Author(s)
  H.Tsuda, M.Mori, Y.Takao, K.Eriguchi, and K.Ono
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 49 Issue: 8S1 Pages: 08JE01-08JE01
- DOI
  10.1143/jjap.49.08je01
- NAID
  210000069057
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] Two-dimensional particle-in-cell Monte Carlo simulation of a miniature inductively coupled plasma source2010
- Author(s)
  Y.Takao, N, Kusaba, K.Eriguchi, K.Ono
- Journal Title
  
  J.Appl.Phys.
  
  Volume: Vol.108, No.9
- NAID
  120005553877
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] Atomic-scale Cellular Model and Profile Simulation of Si Etching : Analysis of Profile Anomalies and Microscopic Uniformity2010
- Author(s)
  H. Tsuda, M. Mori, Y. Takao, K. Eriguchi, and K. Ono
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 49
- NAID
  210000069057
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21340169
[Journal Article] Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced Metal-Oxide-Semiconductor Field-Effect Transistors2010
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 49
- NAID
  210000068176
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Plasma-surface interactions for advanced plasma etching processes in nanoscale ULSIdevice fabrication : A numerical and experimental study2010
- Author(s)
  K. Ono, H. Ohta, and K. Eriguchi
- Journal Title
  
  Thin Solid Films
  
  Volume: 518 Pages: 3461-3468
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21340169
[Journal Article] Bias frequency dependence of pn junction charging damage induced by plasma processing2010
- Author(s)
  M.Kamei, Y.Nakakubo, Y.Takao, K.Eriguchi, K.Ono
- Journal Title
  
  Thin Solid Films 518
  
  Pages: 3469-3474
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Threshold Voltage Instability Induced by Plasma Process Damage in Advanced MOSFETs2010
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys. 49
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Atomic-scale cellular model and profile simulation of Si etching : Analysis of profile anomalies and microscopic uniformity2010
- Author(s)
  H.Tsuda, M.Mori, Y.Takao, K.Eriguchi, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys
  
  Volume: Vol.49, No.8
- NAID
  210000069057
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] Plasma-Induced Defect-Site Generation in Si Substrate and Its Impact on Performance Degradation in Scaled MOSFETs2009
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, Y.Takao, K.Ono
- Journal Title
  
  IEEE Electron Device Lett. 30
  
  Pages: 1275-1277
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Plasma chemical behavior of reactants and reaction products during inductively coupled CF_4 plasma Etching of SiO_22009
- Author(s)
  H. Fukumoto, I. Fujikake, Y. Takao, K. Eriguchi, and K. Ono
- Journal Title
  
  Plasma Sources Sci. Technol.
  
  Volume: 18
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21340169
[Journal Article] Plasma-Induced Defect-Site Generation in Si Substrate and Its Impact on Performance Degradation in Scaled2009
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, Y.Takao, K.Ono
- Journal Title
  
  IEEE Electron Device Lett. 30
  
  Pages: 1275-1277
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360329
[Journal Article] Effects of Mask Pattern Geometry on Plasma Etching Profiles2009
- Author(s)
  H. Fukumoto, K. Eriguchi, and K. Ono
- Journal Title
  
  Jpn. J. App. Phys.
  
  Volume: 48
- NAID
  40016743034
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21340169
[Journal Article] Numerical Study on Si Etching byMonoatomic Cl^+/Br^+ Beams and DiatomicBr_2^+/Cl_2^+/HB_r^+ Beams2009
- Author(s)
  T. Nagaoka, H. Ohta, K. Eriguchi, and K. Ono
- Journal Title
  
  Jpn. J. App. Phys.
  
  Volume: 48
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21340169
[Journal Article] Molecular-Dynamics-Based Profile Evolution Simulation for Sub-10-nm Si Processing Technology2009
- Author(s)
  H.Tsuda, K.Eriguchi, K.Ono, and H.Ohta
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 2 Issue: 11 Pages: 116501-116501
- DOI
  10.1143/apex.2.116501
- NAID
  10027012154
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] Molecular-Dynamics-Based Profile Evolution Simulation for Sub-10-nm Si Processing Technology2009
- Author(s)
  H.Tsuda, K.Eriguchi, K.Ono, H.Ohta
- Journal Title
  
  Appl.Phys.Express Vol.2, No.11
- NAID
  10027012154
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-21110008
[Journal Article] Plasma chemical behaviour of reactants and reaction products during inductively coupled C_F4 plasma Etching of SiO_22009
- Author(s)
  H.Fukumoto, I.Fujikake, Y.Takao, K.Eriguchi, K.Ono
- Journal Title
  
  Plasma Sources Sci.Technol. Vol. 18, No. 4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21340169
[Journal Article] Effects of Mask Pattern Geometry on Plasma Etching Profiles2009
- Author(s)
  H.Fukumoto, K.Eriguchi, K.Ono
- Journal Title
  
  Jpn.J.App.Phys. Vo. 48, No. 9
- NAID
  40016743034
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21340169
[Journal Article] Numerical Study on Si Etching by Monoatomic Cl^+/Br^+ Beams and Diatomic Br_2^+/Cl_2^+/HBr^+Beams2009
- Author(s)
  T.Nagaoka, H.Ohta, K.Eriguchi, K.Ono
- Journal Title
  
  Jpn.J.App.Phys. Vo. 48, No. 7
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21340169
[Journal Article] Micro plasma thruster for ultra small satellites: Plasma chemical and aerodynamical aspects2008
- Author(s)
  Y. Takao, T. Takahashi, K. Eriguchi, and K. Ono
- Journal Title
  
  Pure Appl. Chem. (In press)
- NAID
  120005553869
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18030007
[Journal Article] Numerical Analysis and Experiments of a Microwave-excited Microplasma Thruster2007
- Author(s)
  T. Takahashi, Y. Takao, K. Eriguchi, and K. Ono
- Journal Title
  
  Proc. 30th Int. Electric Propulsion Conf. (30th IEPC), Florence, Italy, Sep. 2007
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18030007
[Journal Article] A miniature electrothermal thruster using microwave-excited microplasmas : Thrust measurement and its comparison with numerical analysis2007
- Author(s)
  Y.Takao, K.Eriguchi, K.Ono
- Journal Title
  
  J.Appl.Phys. (in press)
- NAID
  120002696049
- Data Source
  KAKENHI-PROJECT-18030007
[Journal Article] A miniature electrothermal thruster using microwave-excited microplasmas: Thrust measurement and its comparison with numerical analysis2007
- Author(s)
  Y. Takao, K. Eriguchi, and K. Ono
- Journal Title
  
  J. Appl. Phys. Vol.101
- NAID
  120002696049
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18030007
[Journal Article] マイクロプラズマスラスター2007
- Author(s)
  斧高一, 鷹尾祥典
- Journal Title
  
  応用物理第76巻,第4号
  
  Pages: 394-398
- NAID
  130007717789
- Data Source
  KAKENHI-PROJECT-18030007
[Journal Article] A Model Analysis of Feature Profile Evolution and Microscopic Uniformity during Polysilicon Gate Etching in Cl_2/O_2 plasmas2006
- Author(s)
  Y.Osano, M.Mori, N.Itabashi, K.Takahashi, K.Eriguchi, K.Ono
- Journal Title
  
  Jpn. J. Appl. Phys., Part 1 Vol.45, No.10B
  
  Pages: 8157-8162
- NAID
  10018339129
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17340172
[Journal Article] Properties of Inductively-Coupled RF Plasma Sources with Multiple Low-Inductance Antenna Modules2006
- Author(s)
  K.Takenaka, Y.Setsuhara, K.Nishisaka, A.Ebe, S.Sugiura, K.Takahashi, K.Ono
- Journal Title
  
  Proc.6th International Conf. on Reactive Plasmas and 23rd Symp. on Plasma Processing, Matsushima, Japan, Jan.24-27
  
  Pages: 183-184
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360388
[Journal Article] Miniature electrothermal thruster using microwavew-excited plasmas : A numerical design consideration2006
- Author(s)
  Y.Takao, K.Ono
- Journal Title
  
  Plasma Sources Sci. Technol. Vol.15, No.2
  
  Pages: 211-227
- Data Source
  KAKENHI-PROJECT-18030007
[Journal Article] Microwave-sustained miniature plasmas for an ultra small thruster2006
- Author(s)
  Y.Takao, K.Ono, K.Takahashi, Y.Setsuhara
- Journal Title
  
  Thin Solid Films (in press)
- NAID
  120005553870
- Data Source
  KAKENHI-PROJECT-16040211
[Journal Article] A Model Analysis of Feature Profile Evolution and Microscopic Uniformity during Polysilicon Gate Etching in Cl_2/O_2 plasmas2006
- Author(s)
  Y.Osano, M.Mori, N.Itabashi, K.Takahashi, K.Eriguchi, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys., Part 1 Vol.45, No.10B
  
  Pages: 8157-8162
- NAID
  10018339129
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17340172
[Journal Article] Plasma etching of high-κ and metal gate materials2006
- Author(s)
  K.Nakamura, T.Kitagawa, K.Osari, K.Takahashi, K.Ono
- Journal Title
  
  Vacuum Vol.80,No.7
  
  Pages: 761-767
- Data Source
  KAKENHI-PROJECT-17340172
[Journal Article] Selective etching of high-k HfO_2 films over Si in hydrogen-added fluorocarbon (CF_4/Ar/H_2 and C_4F_8/Ar/H_2) plasmas2006
- Author(s)
  K.Takahashi, K.Ono
- Journal Title
  
  J.Vac.Sci.Technol.A Vol.24, No.3
  
  Pages: 437-443
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17340172
[Journal Article] Plasma etching of high-k and metal gate materials2006
- Author(s)
  K.Nakamura, T.Kitagawa, K.Osari, K.Takahashi, K.Ono
- Journal Title
  
  Vacuum (in press)
- Data Source
  KAKENHI-PROJECT-17340172
[Journal Article] Etching of High-k Dielectric HfO_2 Films in BCl_3-Containing Plasmas Enhanced with O_2 Addition2006
- Author(s)
  T.Kitagawa, K.Nakamura, K.Osari, K.Takahashi, K.Ono, M.Oosawa, S.Hasaka, M.Inoue
- Journal Title
  
  Jpn. J. Appl. Phys., Part 2 Vo.45, No.10
- NAID
  10018158543
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17340172
[Journal Article] Plasma Diagnostics and Thrust Performance Analysis of a Microwave -Excited Microplasma Thruster2006
- Author(s)
  Y.Takao, K.Ono, K.Takahashi, K.Eriguchi
- Journal Title
  
  Jpn.J.Appl.Phys.Part 1 Vol.45,No.7(in press)
- NAID
  10018339427
- Data Source
  KAKENHI-PROJECT-16040211
[Journal Article] Microwave-sustained miniature plasmas for an ultra small thruster2006
- Author(s)
  Y.Takao, K.Ono, K.Takahashi, Y.Setsuhara
- Journal Title
  
  Thin Solid Films Vol.506-507
  
  Pages: 592-596
- NAID
  120005553870
- Data Source
  KAKENHI-PROJECT-18030007
[Journal Article] A Model Analysis of Feature Profile Evolution and Microscopic Uniformity during Polysilicon Gate Etching in Cl_2/O_2 plasmas2006
- Author(s)
  Y.Osano, M.Mori, N.Itabashi, K.Takahashi, K.Eriguchi, K.Ono
- Journal Title
  
  Jpn. J. Appl. Phys. Vol.45,No.10B
  
  Pages: 8157-8162
- NAID
  10018339129
- Data Source
  KAKENHI-PROJECT-17340172
[Journal Article] Miniature electrothermal thruster using microwave-excited plasmas : A numerical design consideration2006
- Author(s)
  Y.Takao, K.Ono
- Journal Title
  
  Plasma Sources Sci.Technol., Vol.15,No.2
  
  Pages: 211-227
- Data Source
  KAKENHI-PROJECT-16040211
[Journal Article] Selective etching of high-k HfO_2 films over Si in hydrogen-added fluorocarbon (CF_4/Ar/H_2 and C_4F_8/Ar/H_2) plasmas2006
- Author(s)
  K.Takahashi, K.Ono
- Journal Title
  
  J. Vac. Sci. Technol. A Vol24,No.3
  
  Pages: 437-443
- Data Source
  KAKENHI-PROJECT-17340172
[Journal Article] Selective etching of high-k HfO_2 films over Si in hydrogen-added fluorocarbon (CF_4/Ar/H_2 and C_4F_8/Ar/H_2) plasmas2006
- Author(s)
  K.Takahashi, K Ono
- Journal Title
  
  J.Vac.Sci.Technol.A Vol.24, No.3(in press)
- Data Source
  KAKENHI-PROJECT-17340172
[Journal Article] Plasma Diagnostics and Thrust Performance Analysis of a Microwave-Excited Microplasma Thruster2006
- Author(s)
  Y.Takao, K.Ono, K.Takahashi, K.Eriguchi
- Journal Title
  
  Jpn.J.Appl. Phys. Vol.45, No.10B
  
  Pages: 8235-8240
- NAID
  10018339427
- Data Source
  KAKENHI-PROJECT-18030007
[Journal Article] Profile simulation model including ion reflection on feature surfaces during plasma etching2006
- Author(s)
  S.Irie, Y.Osano, M.Mori, K.Eriguchi, K.Ono
- Journal Title
  
  Proc. 6th Int. Symp. Dry Process
  
  Pages: 35-36
- Data Source
  KAKENHI-PROJECT-17340172
[Journal Article] Plasma etching of high-k and metal gate materials2006
- Author(s)
  K.Nakamura, T.Kitagawa, K.Osari, K.Takahashi, K.Ono
- Journal Title
  
  Vacuum Vol.80, No.7
  
  Pages: 761-767
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17340172
[Journal Article] Plasma distribution in a planar-type surface wave-excited plasma source2006
- Author(s)
  H.Kousaka, K.Ono, N.Umemura, I Sawada, K.Ishibashi
- Journal Title
  
  Thin Solid Films (in press)
- Data Source
  KAKENHI-PROJECT-16040211
[Journal Article] Selective etching of high-k HfO_2 films over Si in hydrogen-added fluorocarbon (CF_4/Ar/H_2 and C_4F_8/Ar/H_2) plasmas2006
- Author(s)
  K.Takahashi, K.Ono
- Journal Title
  
  J. Vac. Sci. Technol. A Vol.24, No.3
  
  Pages: 437-443
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17340172
[Journal Article] Etching of High-k Dielectric HfO_2 Films in BCl_3-Containing Plasmas Enhanced with O_2 Addition2006
- Author(s)
  T.Kitagawa, K.Nakamura, K.Osari, K.Takahashi, K.Ono, M.Oosawa, S.Hasaka, M.Inoue
- Journal Title
  
  Jpn.J.Appl.Phys., Part 2 Vo.45, No.10
- NAID
  10018158543
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17340172
[Journal Article] An Atomic Scale Model of Multilayer Surface Reactions and the Feature Profile Evolution during Plasma Etching2005
- Author(s)
  Y.Osano, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys., Part 1 Vol.44, No.12
  
  Pages: 8650-8660
- NAID
  10016959476
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17340172
[Journal Article] Microwave-sustained miniature plasmas for an ultra small thruster2005
- Author(s)
  Y.Takao, K.Ono, K.Takahashi, Y.Setsuhara
- Journal Title
  
  Thin Solid Films (in press)
- NAID
  120005553870
- Data Source
  KAKENHI-PROJECT-14655364
[Journal Article] Microwave-Excited High-Density Plasma Column Sustained Along Metal Rod at Negative Voltage2005
- Author(s)
  H.Kousaka, N.Umemura, K.Ono, J.Xu
- Journal Title
  
  Jpn.J.Appl.Phys., Part 2 Vol.44,No.36
- NAID
  130004766234
- Data Source
  KAKENHI-PROJECT-16040211
[Journal Article] Microwave-sustained miniature plasmas for an ultra small thruster2005
- Author(s)
  Y.Takao, K.Ono, K.Takahashi, Y.Setsuhara
- Journal Title
  
  Thin Solid Films (in press)
- NAID
  120005553870
- Data Source
  KAKENHI-PROJECT-16040211
[Journal Article] An Atomic Scale Model of Multilayer Surface Reactions and the Feature Profile Evolution during Plasma Etching2005
- Author(s)
  Y.Osano, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.44 [submitted]
- NAID
  10016959476
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14380209
[Journal Article] Plasma Etching of High-k and Metal Gate Materials2005
- Author(s)
  K.Ono
- Journal Title
  
  Proc.8th International Symposium on Sputtering & Plasma Processes, ISSP-2005, Kanazawa, Japan (Vacuum Society of Japan, 2005) PP2-5 [in press]
  
  Pages: 1-6
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14380209
[Journal Article] Plasma Etching of High-k and Metal Gate Materials2005
- Author(s)
  K.Ono
- Journal Title
  
  Proc.8th International Symposium on Sputtering & Plasma Processes, ISSP-2005, Kanazawa, Japan, 2005, Paper PP2-5 (in press)
  
  Pages: 1-6
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14380209
[Journal Article] Etching characteristics of high-k dielectric HfO_2 thin films in inductively coupled fluorocarbon plasmas2005
- Author(s)
  K.Takahashi, K.Ono, Y.Setsuhara
- Journal Title
  
  J. Vac. Sci. Technol. A Vol.23, No.6
  
  Pages: 1691-1697
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17340172
[Journal Article] An Atomic Scale Model of Multilayer Surface Reactions and the Feature Profile Evolution during Plasma Etching2005
- Author(s)
  Y.Osano, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys., Part 1, Vol.44, No.12
  
  Pages: 8650-8660
- NAID
  10016959476
- Data Source
  KAKENHI-PROJECT-17340172
[Journal Article] Etching characteristics of high-k dielectric HfO_2 thin films in inductively coupled fluorocarbon plasmas2005
- Author(s)
  K.Takahashi, K.Ono, Y.Setsuhara
- Journal Title
  
  J.Vac.Sci.Technol.A Vol.23, No.6
  
  Pages: 1691-1697
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17340172
[Journal Article] An Atomic Scale Model of Multilayer Surface Reactions and the Feature Profile Evolution during Plasma Etching2005
- Author(s)
  Y.Osano, K.Ono
- Journal Title
  
  Jpn.J.Appl.Phys. Vol.44(submitted)
- NAID
  10016959476
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14380209
[Journal Article] マイクロプラズマスラスターの研究開発2005
- Author(s)
  鷹尾祥典, 斧高一
- Journal Title
  
  高温学会誌第31巻,第5号
  
  Pages: 283-290
- NAID
  10029253309
- Data Source
  KAKENHI-PROJECT-16040211
[Journal Article] An Atomic Scale Model of Multilayer Surface Reactions and the Feature Profile Evolution during Plasma Etching2005
- Author(s)
  Y.Osano, K.Ono
- Journal Title
  
  Jpn. J. Appl. Phys., Part 1 Vol.44, No.12
  
  Pages: 8650-8660
- NAID
  10016959476
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17340172
[Journal Article] Optical emission spectroscopy of a microwave-excited plasma source for very small propulsion2004
- Author(s)
  Y.Takao, K.Ono, K.Takahashi, Y.Setsuhara
- Journal Title
  
  Bulletin of the American Physical Society Vol.49,No.5
  
  Pages: 40-40
- Data Source
  KAKENHI-PROJECT-14655364
[Journal Article] 誘導結合型フルオロカーボンプラズマを用いた高誘電率HfO_2薄膜のエッチング2004
- Author(s)
  高橋和生, 斧高一, 節原裕一
- Journal Title
  
  表面技術 Vol.55 No.12
  
  Pages: 793-799
- NAID
  10014096314
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14380209
[Journal Article] Low-Temperature Activation of Ion Implanted Nano-Scale Dopant Layer for Ultra-Shallow Semiconductor Junction Formation by Nonequillibrium Phonon Exitation Processes2004
- Author(s)
  Y.Setsuhara, M.Hashida, M.Fujita, K.Takahashi, K.Ono
- Journal Title
  
  Ninth International conference on Plasma Surface Engineering(Garmisch-Partenkirchen, Germany, September 13-17,2004)
  
  Pages: 372-372
- Data Source
  KAKENHI-PROJECT-15360388
[Journal Article] Development and Modeling of a Microwave-Excited Microplasma Thruster2004
- Author(s)
  Y.Takao, K.Ono
- Journal Title
  
  Proceedings of the 40th Joint Propulsion Conference, Fort Lauderdale, Florida, July,2004
- Data Source
  KAKENHI-PROJECT-16040211
[Journal Article] 半導体シミュレーションとTCAD2004
- Author(s)
  斧高一
- Journal Title
  
  プラズマ・核融合学会誌 Vol.80 No.11
  
  Pages: 909-918
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14380209
[Journal Article] Etching of High Dielectric Constant HfO_2 Thin Films in Inductively Coupled Fluorocarbon Plasmas2004
- Author(s)
  K.Takahashi, K.Ono, Y.Setsuhara
- Journal Title
  
  J.Surface Finishing Soc.Jpn.[in Japanese] Vol.55, No.12
  
  Pages: 793-799
- NAID
  10014096314
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14380209
[Journal Article] Optical emission spectroscopy of a microwave-excited plasma source for very small propulsion2004
- Author(s)
  Y.Takao, K.Ono, K.Takahashi, Y.Setsuhara
- Journal Title
  
  Bulletin of the American Physical Society Vol.49,No.5
  
  Pages: 40-40
- Data Source
  KAKENHI-PROJECT-16040211
[Journal Article] Development and Modeling of a Microwave-Excited Microplasma Thruster2004
- Author(s)
  Y.Takao, K.Ono
- Journal Title
  
  Proceedings of the 40th Joint Propulsion Conference, Fort Lauderdale, Florida, July, 2004
- Data Source
  KAKENHI-PROJECT-14655364
[Journal Article] Low-Temperature Activation of Ion Implanted Nano-Scale Dopant Layer for Ultra-Shallow Semiconductor Junction Formation by Nonequilibrium Phonon Excitation Processes2004
- Author(s)
  Y.Setsuhara, M.Hashida, M.Fujita, K.Takahashi, K.Ono
- Journal Title
  
  Ninth International Conference on Plasma Surface Engineering (Garmisch-Partenkirchen, Germany, September 13-17)
  
  Pages: 372-372
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360388
[Journal Article] Selective etching of HfO_2 high-κ gate materials over Si in C_4F_8/Ar/H_2 plasmas2004
- Author(s)
  K.Takahashi, K.Ono
- Journal Title
  
  Proceedings of the 4th International Symposium on Dry Process, DPS-2004,Tokyo, Japan, November 2004
  
  Pages: 369-274
- Data Source
  KAKENHI-PROJECT-14380209
[Journal Article] Numerical Simulation and Technology Computer-Aided Design of Plasma Processing for the Fabrication of Semiconductor Micro-electronic Devices2004
- Author(s)
  K.Ono
- Journal Title
  
  J.Plasma Fusion Res.[in Japanese] Vol.80, No.11
  
  Pages: 909-918
- NAID
  110003827635
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14380209
[Journal Article] Miniature electrothermal thruster using microwaxe-excited plasmas : A numerical design consideration and experiment2004
- Author(s)
  Y.Takao, K.Ono
- Journal Title
  
  Proceedings of the 24th International Symposium. on Space Technology and Science, Miyazaki, Japan, June 2004
- Data Source
  KAKENHI-PROJECT-16040211
[Journal Article] A model of multilayer surface reactions and simulation of the feature profile evolution during etching of silicon in chlorine plasmas2004
- Author(s)
  Y.Osano, K.Ono
- Journal Title
  
  Abstracts of the 51st International Symposium of the American Vacuum Society, Anaheim, California, November, 2004
- Data Source
  KAKENHI-PROJECT-14380209
[Journal Article] Miniature electrothermal thruster using microwaxe-excited plasmas : A numerical design consideration and experiment2004
- Author(s)
  Y.Takao, K.Ono
- Journal Title
  
  Proceedings of the 24th International Symposium. on Space Technology and Science, Miyazaki, Japan, June 2004
- Data Source
  KAKENHI-PROJECT-14655364
[Journal Article] 半導体プラズマプロセスシミュレーションとTCAD2004
- Author(s)
  斧高一
- Journal Title
  
  プラズマ・核融合学会誌 Vol.80 No.11
  
  Pages: 909-918
- NAID
  110003827635
- Data Source
  KAKENHI-PROJECT-14380209
[Journal Article] A Numerical Analysis of RF Discharges and Particle Transport in the Sheath and Microstructures on the Substrate2003
- Author(s)
  Y.Osano, T.Nomura, K.Miki, K.Ono
- Journal Title
  
  Proc.16th International Symposium on Plasma Chemistry, ISPC-16, Taormina, Italy, 2003, Paper Po3.46/ISPC-478
  
  Pages: 1-6
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14380209
[Journal Article] A Numerical Analysis of RF Discharges and Particle Transport in the Sheath and Microstructures on the Substrate2003
- Author(s)
  Y.Osano, T.Nomura, K.Miki, K.Ono
- Journal Title
  
  Proc.16th International Symposium on Plasma Chemistry, ISPC-16, Taormina, Italy Po3.46/ISPC-478
  
  Pages: 1-6
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14380209
[Journal Article] NONEQUILIBRIUM FORMATION OF NANOSCALE ULTRA-SHALLOW JUNCTIONS BY COHERENT PHONON EXCITATION PROCESS2003
- Author(s)
  Y.Setsuhara, M.Hashida, M.Fuita, S.Adachi, B.Mizuno, K.Takahashi, K.Nogi, K.Ono
- Journal Title
  
  International Conference on the Characterization and Control of Interfaces for High Quality Advanced Materials, Kurashiki, Japan, September 24-27
  
  Pages: 91-91
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360388
[Journal Article] Profile Simulation Model for Nanometer-Scale Control of Critical Dimensions and Etched Profiles2002
- Author(s)
  A.Sano, K.Ono, K.Takahashi, Y.Setsuhara
- Journal Title
  
  Proc.2nd International Symposium on Dry Process, DPS-2004, Tokyo (IEEJ, Tokyo, 2002)
  
  Pages: 177-182
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-14380209
[Journal Article] Profile Simulation Model for Nanometer-Scale Control of Critical Dimensions and Etched Profiles2002
- Author(s)
  A.Sano, K.Ono, K.Takahashi, Y.Setsuhara
- Journal Title
  
  Proc.2nd International Symposium on Dry Process, DPS-2004, Tokyo, Japan 2002
  
  Pages: 177-182
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-14380209
[Journal Article] Etching Technology of High Dielectric Constant (High-k) and Metal Gate Materials
- Author(s)
  K.Ono, K.Eriguchi
- Journal Title
  
  Semiconductor Technology Outlook 2007, Chap.4, Sec.4.5 (Electronic Journal, Tokyo, 2007)[in Japanese] (in press)
  
  Pages: 1-6
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17340172
[Patent] 半導体処理装置のクリーニング方法およびシリコン基板のエッチング方法2011
- Inventor(s)
  斧高一,北川智洋,井上實,大沢正典
- Industrial Property Rights Holder
  京都大学,太陽日酸株式会社
- Industrial Property Rights Type
  特許
- Acquisition Date
  2011-10-07
- Data Source
  KAKENHI-PLANNED-21110008
[Patent] ワイヤー状構造をもつ半導体の製造方法及び製造装置2009
- Inventor(s)
  太田裕朗,斧高一
- Industrial Property Rights Holder
  京都大学
- Industrial Property Rights Type
  特許
- Filing Date
  2009-06-23
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] プラズマエッチングにおける表面ナノ周期構造の形成2018
- Author(s)
  斧高一
- Organizer
  応用物理学会第206回シリコンテクノロジー研究会, 東京
- Invited
- Data Source
  KAKENHI-PROJECT-15H03582
[Presentation] Surface ripple formation during plasma etching of silicon2017
- Author(s)
  K. Ono, N. Nakazaki, H. Tsuda, Y. Takao, and K. Eriguchi
- Organizer
  70th Annual Gaseous Electronics Conference (GEC2017), Pittsburgh, PA, U.S.A.
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03582
[Presentation] Plasma-surface interactions in nanofabrication and space exploration2017
- Author(s)
  K. Ono
- Organizer
  14th International Symposium on Sputtering & Plasma Processes, ISSP 2017, Kanazawa, Japan
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03582
[Presentation] Origin of Plasma-Induced Surface Roughening and Ripple Formation during Plasma Etching of Silicon: A Monte Carlo Study2017
- Author(s)
  K. Ono, T. Hatsuse, N. Nakazaki, H. Tsuda, Y. Takao, and K. Eriguchi
- Organizer
  34th Symposium on Plasma Processing (SPP34) / The 29th Symposium on Plasma Science for Materials (SPSM29)
- Place of Presentation
  Sapporo, Japan
- Year and Date
  2017-01-18
- Data Source
  KAKENHI-PROJECT-15H03582
[Presentation] Origin of plasma-induced surface roughening and ripple formation during plasma etching2016
- Author(s)
  K. Ono, N. Nakazaki, H. Tsuda, Y. Takao, and K. Eriguchi
- Organizer
  69th Annual Gaseous Electronics Conference (GEC2016)
- Place of Presentation
  Bochm, Germany
- Year and Date
  2016-10-12
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03582
[Presentation] プラズマプロセス誘起ダメージによるデバイス特性劣化の包括的モデル2016
- Author(s)
  江利口浩二、斧高一
- Organizer
  応用物理学会シリコンテクノロジー分科会
- Place of Presentation
  宝塚大学梅田キャンパス
- Year and Date
  2016-02-27
- Invited
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] 層間絶縁膜へのプラズマダメージの電気的解析手法2016
- Author(s)
  西田健太郎、岡田行正、鷹尾祥典、江利口浩二、斧高一
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Surface orientation dependence of plasma-induced ion bombardment damage in Si substrate2015
- Author(s)
  Y. Okada, K. Eriguchi, K. Ono
- Organizer
  Proc. 37th International Symposium on Dry Process
- Place of Presentation
  Hyogo, Japan
- Year and Date
  2015-11-05
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Surface Orientation Dependence of Ion Bombardment Damage during Plasma Processing2015
- Author(s)
  Y. Okada, K. Eriguchi, K. Ono
- Organizer
  IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol.
- Place of Presentation
  Leuven, Belgium
- Year and Date
  2015-06-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Surface rippling by oblique ion incidence during plasma etching of silicon: Experimental demonstration using sheath control plates2015
- Author(s)
  N. Nakazaki, H. Matsumoto, K. Eriguchi, and K. Ono
- Organizer
  68th Annual Gaseous Electronics Conference / 9th International Conference on Reactive Plasmas / 33rd Symposium on Plasma Processing (GEC2015/ICRP-9/SPP-31)
- Place of Presentation
  Honolulu, Hawaii, U.S.A.
- Year and Date
  2015-10-15
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03582
[Presentation] Plasma-induced surface roughening and ripple formation during plasma etching of silicon2015
- Author(s)
  K. Ono
- Organizer
  American Vacuum Society 62nd International Symposium (AVS2015)
- Place of Presentation
  San Jose, California, U.S.A.
- Year and Date
  2015-10-20
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03582
[Presentation] A new evaluation method to characterize low-k dielectric damage during plasma processing2015
- Author(s)
  K. Nishida, Y. Okada, Y. Takao, K. Eriguchi, K. Ono
- Organizer
  Proc. 37th International Symposium on Dry Process
- Place of Presentation
  Hyogo, Japan
- Year and Date
  2015-11-05
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Plasma-surface interactions for top-down and bottom-up nanofabrication2015
- Author(s)
  K. Ono
- Organizer
  68th Annual Gaseous Electronics Conference / 9th International Conference on Reactive Plasmas / 33rd Symposium on Plasma Processing (GEC2015/ICRP-9/SPP-31)
- Place of Presentation
  Honolulu, Hawaii, U.S.A.
- Year and Date
  2015-10-14
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03582
[Presentation] Experimental demonstration of oblique ion incidence with sheath control plates during plasma etching of silicon2015
- Author(s)
  N. Nakazaki, H. Matumoto, S. Sonobe, Y. Takao, K. Eriguchi, and K. Ono
- Organizer
  37th International Symposium on Dry Process (DPS2015)
- Place of Presentation
  Awaji Island, Hyogo, Japan
- Year and Date
  2015-11-05
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H03582
[Presentation] Plasma-induced photon irradiation damage on low-k dielectrics enhanced by Cu-line layout2015
- Author(s)
  T. Ikeda, A. Tanihara, N. Yamamoto, S. Kasai, K. Eriguchi, and K. Ono
- Organizer
  IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol.
- Place of Presentation
  Leuven, Belgium
- Year and Date
  2015-06-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Impacts of plasma process parameters on mechanical properties of c-BN thin-films2014
- Author(s)
  M. Noma, K. Eriguchi, S. Hasegawa, M.Yamashita, Y. Takao, N. Terayama, K. Ono
- Organizer
  The 8th Int. Conf. Reactive Plasmas / 31st Symp. Plasma Processing, 5B-AM-O2
- Year and Date
  2014-02-05
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] プラズマ誘起 Si 基板ダメージの熱処理回復過程の検討(1)2014
- Author(s)
  江利口浩二, 深沢正永, 鷹尾祥典, 辰巳哲也, 斧高一
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Year and Date
  2014-03-19
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] プラズマチャージングダメージによる MOSFET ランダムテレグラフノイズ(RTN)特性の変動2014
- Author(s)
  亀井政幸, 江利口浩二, 鷹尾祥典, 斧高一
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Year and Date
  2014-03-19
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Improved hardness and electrical property of c-BN thin films by magnetically enhanced plasma ion plating technique2013
- Author(s)
  M. Noma, K. Eriguchi, Y. Takao, N. Terayama, K. Ono
- Organizer
  Dry Process Symposium
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Effects of Plasma-Induced Si Damage Structures on Annealing Process Design-Gas Chemistry Impact2013
- Author(s)
  A. Matsuda, Y. Nakakubo, M. Fukasawa, Y. Takao, K. Eriguchi, T. Tatsumi, K. Ono
- Organizer
  AVS 60th International Symposium & Exhibition
- Place of Presentation
  Long Beach, USA
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Effects of Plasma-Induced Si Damage Structures on Annealing Process Design-Gas Chemistry Impact2013
- Author(s)
  A. Matsuda, Y. Nakakubo, M. Fukasawa, Y. Takao, K. Eriguchi, T. Tatsumi, K. Ono
- Organizer
  AVS 60th International Symposium & Exhibition
- Place of Presentation
  the Long Beach Convention Center, California, USA
- Year and Date
  2013-10-28
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Plasma Etch Challenges for Nanoscale Device Fabrication : Modeling, Analysis, and Control of Plasma-Surface Interactions2013
- Author(s)
  K.Ono
- Organizer
  9th Asian-European International Conference on Plasma Surface Engineering (AEPSE2013)
- Place of Presentation
  Jeju, South Korea (韓国,済州島)
- Year and Date
  2013-08-30
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] Atomistic simulations of plasma process-induced Si substrate damage - Effects of substrate bias-power frequency2013
- Author(s)
  A. Matsuda, Y. Nakakubo, Y. Takao, K. Eriguchi, K. Ono
- Organizer
  Int. Conf. on Integrated Circuit Design & Technol.
- Place of Presentation
  Pavia, Italy
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Molecular dynamics simulation of plasma-induced Si substrate damage : Latent defect structures and bias-frequency effects2013
- Author(s)
  K. Eriguchi, A. Matsuda, Y. Takao, K. Ono
- Organizer
  The 66th Annual Gaseous Electronics Conference (GEC)
- Place of Presentation
  Princeton, New Jersey
- Year and Date
  2013-10-03
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Molecular dynamics simulation of plasma-induced Si substrate damage: Latent defect structures and bias-frequency effects2013
- Author(s)
  K. Eriguchi, A. Matsuda, Y. Takao, and K. Ono
- Organizer
  The 66th Annual Gaseous Electronics Conference
- Place of Presentation
  Princeton, USA
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Surface Roughening during Si Etching in Inductively Coupled Cl2 Plasmas: Experimental Investigations and a Comparison with Numerical Simulations2013
- Author(s)
  (H. Tsuda), N. Nakazaki, D. Fukushima, Y. Takao, K. Eriguchi, and K. Ono
- Organizer
  6th International Conference on Plasma-Nanotechnology Science (IC-PLANTS2013)
- Place of Presentation
  Gero, Gifu, Japan
- Year and Date
  2013-02-03
- Invited
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] micro-Photoreflectance spectroscopy for microscale monitoring of plasma-induced physical damage2013
- Author(s)
  A. Matsuda, Y. Nakakubo, Y. Takao, K. Eriguchi, K. Ono
- Organizer
  Dry Process Symposium
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Formation Mechanisms of Nanoscale Surface Roughness and Rippling during Plasma Etching and Sputtering of Si under Oblique Ion Incidence2012
- Author(s)
  (H. Tsuda), Y. Takao, K. Eriguchi, and K. Ono
- Organizer
  American Vacuum Society 59th International Symposium (AVS2012)
- Place of Presentation
  Tampa, Florida, USA
- Year and Date
  2012-10-30
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] Plasma Etching for Nanofabrication : Fundamentals, Current Status, and Future Prospects2012
- Author(s)
  K.Ono
- Organizer
  11th Asia Pacific Conference on Plasma Science and Technology (APCPST 2012) and 25th Symposium on Plasma Science for Materials SPSM25)
- Place of Presentation
  Kyoto, Japan (京都市)
- Year and Date
  2012-10-02
- Invited
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] Plasma Etching for Nanofabrication: Fundamentals, Current Status, and Future Prospects2012
- Author(s)
  (K. Ono)
- Organizer
  11th Asia Pacific Conference on Plasma Science and Technology (APCPST2012) and 25th Symposium on Plasma Science for Materials (SPSM25)
- Place of Presentation
  Kyoto University, Kyoto, Japan
- Year and Date
  2012-10-02
- Invited
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] Surface Roughening and Rippling during Plasma Etching2012
- Author(s)
  (K. Ono)
- Organizer
  International Union of Materials Research Societies - International Conference on Electronic Materials (IUMRS-ICEM 2012)
- Place of Presentation
  Pacifico Yokohama, Yokohama, Japan
- Year and Date
  2012-09-25
- Invited
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] Surface Roughening and Rippling during Plasma Etching2012
- Author(s)
  K.Ono
- Organizer
  International Union of Materials Research Societies - International Conference on Electronic Materials (IUMRSICEM 2012)
- Place of Presentation
  Yokohama, Japan (横浜市)
- Year and Date
  2012-09-25
- Invited
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] Hを含むプラズマによるSi基板ダメージ構造とその回復プロセスについての検討2012
- Author(s)
  中久保義則, 松田朝彦, 深沢正永, 鷹尾祥典, 江利口浩二, 辰巳哲也, 斧高一
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学
- Year and Date
  2012-09-12
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Molecular Dynamics Analysis of Si Etching with Cl and Br Beams: Ion Incident Angle and Neutral Radical Flux Dependence2012
- Author(s)
  (N. Nakazaki), H. Tsuda, Y. Takao, K. Eriguchi, and K. Ono
- Organizer
  American Vacuum Society 59th International Symposium (AVS2012)
- Place of Presentation
  Tampa, Florida, USA
- Year and Date
  2012-10-30
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] 温度制御型フォトリフレクタンス分光法を用いたプラズマ誘起Si 基板ダメージの定量化とそのプロファイル解析2012
- Author(s)
  松田朝彦, 中久保義則, 鷹尾祥典, 江利口浩二, 斧高一
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会(IEICE-SDM)
- Place of Presentation
  東北大学
- Year and Date
  2012-10-25
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Improvement in the Evaluation Technique for Plasma-Etch Si Damage using Photoreflectance Spectroscopy with Temperature Control2011
- Author(s)
  A.Matsuda, Y.Nakakubo, Y.Takao, K.Eriguchi, K.Ono
- Organizer
  AVS 58th International Symposium & Exhibition
- Place of Presentation
  USA
- Year and Date
  2011-11-03
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Plasma-Surface Interactions for Materials Nanofabrication and Space, Propulsion : A Unified Study for Technology Developments and Future2011
- Author(s)
  K.Ono
- Organizer
  Plasma Conference 2011 (PLASMA 2011)
- Place of Presentation
  Kanazawa, Japan(招待講演)
- Year and Date
  2011-11-22
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] Plasma-Surface Interactions for Materials Nanofabrication and Space Propulsion : A Unified Study for Technology Developments and Future Progress2011
- Author(s)
  K.Ono
- Organizer
  Plasma Conference 2011 (PLASMA 2011)
- Place of Presentation
  Kanazawa, Japan (金沢市)
- Year and Date
  2011-11-22
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] 物理的プラズマダメージによるMOSFETオフリーク電流とそのバラツキの増大モデル2011
- Author(s)
  江利口浩二, 鷹尾祥典, 斧高一
- Organizer
  第16回研究会ゲートスタック研究会-材料・プロセス・評価の物理- 招待講演
- Place of Presentation
  東京工業大学
- Year and Date
  2011-01-21
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] 高誘電率(High-k)材料のドライエッチング2011
- Author(s)
  斧高一
- Organizer
  応用物理学会2011年(H23年)秋季第72回学術講演会
- Place of Presentation
  山形大学(山形)(招待講演)
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-21340169
[Presentation] 物理的プラズマダメージによるMOSFETバラツキ増大予測のための包括モデル2011
- Author(s)
  江利口浩二, 中久保義則, 松田朝彦, 鷹尾祥典, 斧高一
- Organizer
  シリコン材料・デバイス研究会(SDM)
- Place of Presentation
  東北大学
- Year and Date
  2011-10-21
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] 高誘電率(High-k)材料のドライエッチング2011
- Author(s)
  斧高一
- Organizer
  応用物理学会2011年(平成23年)秋季第72回学術講演会
- Place of Presentation
  山形大学(山形市).
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-21340169
[Presentation] Defect Profiling Using a Wet-Etch Technique and Photoreflectance Spectroscopy for He- and Ar-Plasma-Damaged Si Substrate2011
- Author(s)
  A. Matsuda, Y. Nakakubo, Y. Takao, K. Eriguchi, K. Ono
- Organizer
  Proc. 33rd International Symposium on Dry Process (DPS 2011)
- Place of Presentation
  Kyoto
- Year and Date
  2011-11-11
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] A New Prediction Model for Effects of Plasma-Induced Damage on Parameter Variations in Advanced LSIs2011
- Author(s)
  K.Eriguchi, Y.Takao, K.Ono
- Organizer
  Proc.Int.Conf.on Integrated Circuit Design & Technol.(ICICDT)
- Place of Presentation
  Taiwan
- Year and Date
  2011-05-03
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] 電気的手法を用いた物理的Si基板ダメージのプラズマプロセス依存性の検討2011
- Author(s)
  中久保義則, 江利口浩二, 松田朝彦, 鷹尾祥典, 斧高一
- Organizer
  シリコン材料・デバイス研究会 (SDM)
- Place of Presentation
  東北大学
- Year and Date
  2011-10-21
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] A New Prediction Model for Effects of Plasma-Induced Damage on Parameter Variations in Advanced LSIs2011
- Author(s)
  K. Eriguchi, Y. Takao, K.Ono
- Organizer
  IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol. (ICICDT)
- Place of Presentation
  Kaohsiung, Taiwan
- Year and Date
  2011-05-04
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Defect Profiling Using a Wet-Etch Technique and Photoreflectance Spectroscopy for He-and Ar-Plasma-Damaged Si Substrate2011
- Author(s)
  A.Matsuda, Y.Nakakubo, Y.Takao, K.Eriguchi, K.Ono
- Organizer
  Proc.33rd International Symposium on Dry Process
- Place of Presentation
  Kyoto
- Year and Date
  2011-11-11
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Modeling the Effects of Plasma-Induced Physical Damage on Subthreshold Leakage Current in Scaled MOSFETs2010
- Author(s)
  K.Eriguchi, M.Kamei, Y.Takao, K.Ono
- Organizer
  IEEE Int.Conf.on Integrated Circuit Design&Technol
- Place of Presentation
  フランス/グルノーブル
- Year and Date
  2010-06-03
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Trade-off relationship between Si recess and defect density formed by plasma-induced damage in planar MOSFETs and the optimization strategies2010
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, Y.Takao, K.Ono
- Organizer
  Symp.Dry Process
- Place of Presentation
  東京工業大学
- Year and Date
  2010-11-12
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Modeling the Effects of Plasma-Induced Physical Damage on Subthreshold Leakage Current in Scaled MOSFETs2010
- Author(s)
  K.Eriguchi, M.Kamei, Y.Takao, K.Ono
- Organizer
  Int.Conf.on Integrated Circuit Design & Technology
- Place of Presentation
  フランス/グルノーブル
- Year and Date
  2010-06-03
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Plasma-surface interactions in plasma etching processes for nanometer-scaled microelectronic devices2010
- Author(s)
  K. Ono
- Organizer
  63rd Annual Gaseous Electronics Conference(GEC2010) and 7th International Conference on ReactivePlasmas(ICRP-7)
- Place of Presentation
  Paris, France(フランス,パリ市).
- Year and Date
  2010-10-07
- Data Source
  KAKENHI-PROJECT-21340169
[Presentation] Plasma-surface interactions in plasma etching processes for nanometer-scale microelectronic devices2010
- Author(s)
  K.Ono
- Organizer
  63rd Gaseous Electronics Conference (GEC2010) and 7th International Conference on Reactive Plasmas (ICRP-7)
- Place of Presentation
  Paris, France(招待講演)
- Year and Date
  2010-10-07
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy2010
- Author(s)
  A.Matsuda, Y.Nakakubo, Y.Takao, K.Eriguchi, K.Ono
- Organizer
  Symp.Dry Process 2010
- Place of Presentation
  東京工業大学
- Year and Date
  2010-11-12
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] プラズマによるSi基板ダメージとMOSデバイス特性劣化の相関モデル2010
- Author(s)
  江利口浩二, 中久保義則, 松田朝彦, 鷹尾祥典, 斧高一
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Plasma-surface interactions in plasma etching processes for nanometer-scale microelectronic devices2010
- Author(s)
  K.Ono
- Organizer
  63rd Annual Gaseous Electronics Conference (GEC2010) and 7th International Conference on Reactive Plasmas (ICRP-7)
- Place of Presentation
  Paris, France (フランス,パリ市)
- Year and Date
  2010-10-07
- Invited
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] A Model for Effects of RF Bias Frequency and Waveform on Si Damage d-Layer Formation during Plasma Etching2010
- Author(s)
  K.Eriguchi, Y.Takao, K.Ono
- Organizer
  Proc.63rd Gaseous Electronics Conference (GEC) and 7th International Conference on Reactive Plasmas (ICRP)
- Place of Presentation
  フランス/パリ
- Year and Date
  2010-10-06
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy2010
- Author(s)
  A.Matsuda, Y.Nakakubo, Y.Takao, K.Eriguchi, K.Ono
- Organizer
  Symp. Dry Process
- Place of Presentation
  東京工業大学
- Year and Date
  2010-11-12
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Trade-off relationship between Si recess and defect density formed by plasma-induced damage in planar MOSFETs and the optimization strategies2010
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, Y.Takao, K.Ono
- Organizer
  Symp.Dry Process 2010
- Place of Presentation
  東京工業大学
- Year and Date
  2010-11-12
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] A Model for Effects of RF Bias Frequency and Waveform on Si Damaged-Layer Formation during Plasma Etching2010
- Author(s)
  K.Eriguchi, Y.Takao, K.Ono
- Organizer
  Proc.63rd Gaseous Electronics Conference and 7th International Conference on Reactive Plasmas
- Place of Presentation
  フランス/パリ
- Year and Date
  2010-10-06
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Plasma-surface interactions in plasma etching of high-k dielectrics and metal electrode materials2010
- Author(s)
  K. Ono
- Organizer
  10th Asia-Pacific Conference on Plasma Science andTechnology(APCPST2010) and 23rd Symposium on Plasma Science for Materials(SPSM23)
- Place of Presentation
  Jeju, SouthKorea(韓国,済州島).
- Year and Date
  2010-07-05
- Data Source
  KAKENHI-PROJECT-21340169
[Presentation] Effects of Plasma Process Fluctuation on Variation in MOS Device Parameters2010
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
- Organizer
  The 3rd International Conference on Plasma-Nanotechnology&Science 2010
- Place of Presentation
  名城大学
- Year and Date
  2010-03-11
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Study of Wet-Etch Rate of Plasma-Damaged Surface and Interface Layers and Residual Defect Sites2010
- Author(s)
  Y.Nakakubo, A.Matsuda, Y.Takao, K.Eriguchi, K.Ono
- Organizer
  Symp.Dry Process
- Place of Presentation
  東京工業大学
- Year and Date
  2010-11-11
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Effects of Plasma Process Fluctuation on Variation in MOS Device Parameters2010
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
- Organizer
  The 3rd International Conference on Plasma-Nanotechnology & Science, 2010
- Place of Presentation
  名城大学
- Year and Date
  2010-03-11
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Plasma-surface interactions in plasma etching of high-k dielectrics and metal electrode materials2010
- Author(s)
  K.Ono
- Organizer
  10th Asia-Pacific Conference on Plasma Science and Technology (APCPST2010) and 23rd Symposium on Plasma Science for Materials (SPSM23)
- Place of Presentation
  Jeju, South Korea [韓国,済州島]
- Year and Date
  2010-07-05
- Invited
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] Plasma-surface interactions in plasma etching of high-k dielectrics and metal electrode materials2010
- Author(s)
  K.Ono
- Organizer
  10th Asia-Pacific Conference on Plasma Science and Technology(APCPST2010)and 23rd Sympo-sium on Plasma Science for Materials(SPSM23)
- Place of Presentation
  Jeju, South Korea
- Year and Date
  2010-07-05
- Data Source
  KAKENHI-PROJECT-21340169
[Presentation] Study of Wet-Etch Rate of Plasma-Damaged Surface and Interface Layers and Residual Defect Sites2010
- Author(s)
  Y.Nakakubo, A.Matsuda, Y.Takao, K.Eriguchi, K.Ono
- Organizer
  Symp.Dry Process 2010
- Place of Presentation
  東京工業大学
- Year and Date
  2010-11-12
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] プラズマプロセスにおけるSi基板ダメージ層形成モデルの提案2010
- Author(s)
  江利口浩二, 中久保義則, 松田朝彦, 鷹尾祥典, 斧高一
- Organizer
  2010年秋季第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学文教キャンパス
- Year and Date
  2010-09-16
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Threshold Voltage Instability Induced by Plasma Process Damage in Advanced MOSFETs2009
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
- Organizer
  Proceedings of 31st International Symposium on Dry Process, 2009, pp. 267-268
- Place of Presentation
  韓国釜山
- Year and Date
  2009-09-25
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Assessment of Ion-Bombardment Damage in Plasma-Exposed Si by Interface Layer Thickness and Charge-Trapping Defects2009
- Author(s)
  A.Matsuda, Y.Nakakubo, M.Kamei, Y.Takao, K.Eriguchi, K.Ono
- Organizer
  Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials
- Place of Presentation
  仙台
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Plasma Nano-Surface Engineering for Advanced Gate Etch Process in ULSI Device Fabrication2009
- Author(s)
  K.Ono
- Organizer
  7th Asian-European International Conference on Plasma Surface Engineering (AEPSE2009), Busan, South Korea.
- Place of Presentation
  Busan, South Korea
- Year and Date
  2009-09-23
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] Simulation and Experimental Study on the Characteristics of Plasma-Induced Damage and Methodology for Accurate Damage Analysis2009
- Author(s)
  A.Matsuda, Y.Nakakubo, R.Ogino, H.Ohta, K.Eriguchi, K.Ono
- Organizer
  IEEE Int.Conf.on Integrated Circuit Design&Technol
- Place of Presentation
  米国/オースチン
- Year and Date
  2009-05-19
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Effects of O_2 addition on Si substrate surface damage exposed to Ar plasma2009
- Author(s)
  Y.Nakakubo, A.Matsuda, Y.Takao, K.Eriguchi, K.Ono
- Organizer
  第22回プラズマ材料科学シンポジウム
- Place of Presentation
  東京大学山上会館
- Year and Date
  2009-06-15
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Comprehensive Modeling of Threshold Voltage Variability Induced by Plasma Damage in Advanced MOSFETs2009
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
- Organizer
  Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials
- Place of Presentation
  仙台
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Threshold Voltage Instability Induced by Plasma Process Damage in Advanced MOSFETs2009
- Author(s)
  K.Eriguchi, Y.Nakakubo, A.Matsuda, M.Kamei, Y.Takao, K.Ono
- Organizer
  Symp.Dry Process, 2009
- Place of Presentation
  韓国/釜山
- Year and Date
  2009-09-25
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Detailed Analysis of Plasma-Damaged Layer and Its Significance in Si Surface Structures by Spectroscopic Ellipsometry and Molecular Dynamics Simulations2009
- Author(s)
  A. Matsuda, R. Ogino, Y. Nakakubo, H. Ohta., K. Eriguchi, K. Ono
- Organizer
  プラズマ科学シンポジウム2009/第26回プラズマプロセシング研究会
- Place of Presentation
  名古屋大学豊田講堂・シンポシオン
- Year and Date
  2009-02-04
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Modeling of Ion-Bombardment Damage on Si Surfaces for In-Line Analysis2009
- Author(s)
  A.Matsuda, Y.Nakakubo, M.Kamei, Y.Takao, K.Eriguchi, K.Ono
- Organizer
  第22回プラズマ材料科学シンポジウム
- Place of Presentation
  東京大学山上会館
- Year and Date
  2009-06-15
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Identification of Carrier Trapping Defect Sites in Plasma-Exposed Si Surface by Optical and Electrical Techniques2009
- Author(s)
  Y. Nakakubo, A. Mtsuda, R. Ogino, M. Kamei, K. Eriguchi, K. Ono
- Organizer
  プラズマ科学シンポジウム2009/第26回プラズマプロセシング研究会
- Place of Presentation
  名古屋大学豊田講堂・シンポシオン
- Year and Date
  2009-02-04
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Si表面のプラズマダメージの精確な解析における界面層の重要性2009
- Author(s)
  松田朝彦, 荻野力, 中久保義則, 太田裕朗, 江利口浩二, 斧高一
- Organizer
  2009年春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Bias frequency dependence of pn junction chargin damage induced by plasma processing2009
- Author(s)
  M.Kamei, Y.Nakakubo, Y.Takao, K.Eriguchi, K.Ono
- Organizer
  第22回プラズマ材料科学シンポジウム
- Place of Presentation
  東京大学山上会館
- Year and Date
  2009-06-15
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Effects of O2 addition on Si substrate surface damage exposed to Arplasma2009
- Author(s)
  Y.Nakakubo, A.Matsuda, Y.Takao, K.Eriguchi, K.Ono
- Organizer
  第22回プラズマ材料科学シンポジウム
- Place of Presentation
  東京大学山上会館
- Year and Date
  2009-06-15
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Si表面のプラズマダメージの精確な解析における界面層の重要性2009
- Author(s)
  松田朝彦, 荻野力, 中久保義則, 太田裕朗, 江利口浩二, 斧高一
- Organizer
  ・2009年春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Plasma Nano-Surface Engineering for Advanced Gate Etch Process in ULSI Device Fabrication2009
- Author(s)
  K.Ono
- Organizer
  7th Asian-European International Conference on Plasma Surface Engineering (AEPSE2009)
- Place of Presentation
  Busan, Korea (韓国,釜山市)
- Year and Date
  2009-09-23
- Invited
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] Plasma Nano-Surface Engineering for Advanced Gate Etch Process in ULSIDevice Fabrication2009
- Author(s)
  K. Ono
- Organizer
  7th Asian-European International Conference on Plasma Surface Engineering(AEPSE2009)
- Place of Presentation
  Busan, South Korea(韓国,釜山市).
- Year and Date
  2009-09-23
- Data Source
  KAKENHI-PROJECT-21340169
[Presentation] 02添加ArプラズマによるSi基板表面層内誘起欠陥の電気的解析2009
- Author(s)
  中久保義則, 松田朝彦, 荻野力, 上田義法, 江利口浩二, 斧高一
- Organizer
  ・2009年春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] A study of plasma-surface Interactions in advanced plasma etching nrocesses for nanofabrication2009
- Author(s)
  K.Ono
- Organizer
  The 22nd Symposium on Plasma Science for Materials (SPSM-22)
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2009-06-16
- Data Source
  KAKENHI-PROJECT-21340169
[Presentation] O_2添加ArプラズマによるSi基板表面層内誘起欠陥の電気的解析2009
- Author(s)
  中久保義則, 松田朝彦, 荻野力, 上田義法, 江利口浩二, 斧高一
- Organizer
  2009年春季第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Identification of Carrier Trapping Defect Sites in Plasma-Exposed Si Surface by Optical and Electrical Techniques2009
- Author(s)
  Y.Nakakubo, A.Matsuda, R.Ogino, M.Kamei, K.Eriguchi, K.Ono
- Organizer
  プラズマ科学シンポジウム2009/第26回プラズマプロセシング研究会
- Place of Presentation
  名古屋大学豊田講堂・シンポジオン
- Year and Date
  2009-02-04
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Modeling of Ion-Bombardment Damage on Si Surfaces for In-Line Analysis2009
- Author(s)
  A.Matsuda, Y.Nakakubo, M.Kamei, Y.Takao, K.Eriguchi, K.Ono
- Organizer
  第22回プラズマ材料科学シンポジウム
- Place of Presentation
  東京大学山上会
- Year and Date
  2009-06-15
- Data Source
  KAKENHI-PROJECT-20360329
[Presentation] Microwave-Excited Microplasma Thruster: A Numerical and Experimental Study of the Plasma Generation and Micronozzle Flow2007
- Author(s)
  K. Ono
- Organizer
  4th Int. Workshop on Microplasmas (4th IWM)
- Place of Presentation
  Tainan, Taiwan
- Year and Date
  2007-10-29
- Data Source
  KAKENHI-PROJECT-18030007
[Presentation] Surface roughening during Si etching in inductively coupled Cl2 plasmas
- Author(s)
  N. Nakazaki, Y. Takao, K. Eriguchi, and K. Ono
- Organizer
  8th International Conference on Reactive Plasmas and 31st Symposium on Plasma Processing (ICRP-8/SPP-31)
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] Molecular Dynamics Analysis of Si Etching in HBr-based Plasmas: Ion Incident Energy and Angle Dependence
- Author(s)
  N. Nakazaki, Y. Takao, K. Eriguchi, and K. Ono
- Organizer
  AVS 60th International Symposium (AVS2013)
- Place of Presentation
  Long Beach, CA, USA
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] Impacts of Plasma-induced Charging Damage on Random Telegraph Noise (RTN) Behaviors in MOSFETs with SiO 2 and High-k Gate Dielectrics
- Author(s)
  M. Kamei, Y. Takao, K. Eriguchi, K. Ono
- Organizer
  Proc. 35th International Symposium on Dry Process (DPS)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Low-temperature microwave repairing for plasma-induced local defect structures near Si substrate surface
- Author(s)
  T. Iwai, K. Eriguchi, S. Yamauchi, N. Noro, J. Kitagawa, K. Ono
- Organizer
  36th International Symposium on Dry Process (DPS)
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2014-11-27 – 2014-11-28
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Molecular dynamics simulation of etch by-product ion incidence during Si etching in Cl-based plasmas
- Author(s)
  N. Nakazaki, Y. Takao, K. Eriguchi, and K. Ono
- Organizer
  26th Symposium on Plasma Science & Materials (SPSM26)
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] A New Aspect of Plasma‐Induced Physical Damage in Three‐Dimensional Scaled Structures
- Author(s)
  K. Eriguchi, Y. Takao, K. Ono
- Organizer
  IEEE Int. Conf. on Integrated Circuit Design & Technol. (ICICDT)
- Place of Presentation
  Austin, TX, USA
- Year and Date
  2014-05-29 – 2014-05-30
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] μ-Photoreflectance spectroscopy for microscale monitoring of plasma-induced physical damage
- Author(s)
  A. Matsuda, Y. Nakakubo, Y. Takao, K. Eriguchi, K. Ono
- Organizer
  Proc. 35th International Symposium on Dry Process (DPS)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] A model for plasma-induced latent defects in three-dimensional structures and its application to parameter variation analysis of FinFETs
- Author(s)
  K. Eriguchi, K. Ono
- Organizer
  36th International Symposium on Dry Process (DPS)
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2014-11-27 – 2014-11-28
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Plasma-Induced Damage in 3D Structures behind Device Scaling
- Author(s)
  K. Eriguchi, Y. Takao, K. Ono
- Organizer
  Plasma Etch and Strip in Microtechnology (PESM)
- Place of Presentation
  Grenoble, France
- Year and Date
  2014-05-11 – 2014-05-12
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Effects of ion energy on surface and mechanical properties of BN films formed by a reactive plasma-assisted coating method
- Author(s)
  M. Noma, K. Eriguchi, S. Hasegawa, M. Yamashita, K. Ono
- Organizer
  36th International Symposium on Dry Process (DPS)
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2014-11-27 – 2014-11-28
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Atomistic simulations of plasma process-induced Si substrate damage - Effects of substrate bias-power frequency
- Author(s)
  A. Matsuda, Y. Nakakubo, Y. Takao, K. Eriguchi, K. Ono
- Organizer
  IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol. (ICICDT)
- Place of Presentation
  Italy
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Comprehensive Evidence-based Guidelines for Annealing Plasma- damaged Si Substrates -Impact of plasma process conditions-
- Author(s)
  M. Fukasawa, A. Matsuda, Y. Nakakubo, S. Sugimura, K. Nagahata, Y. Takao, K. Eriguchi, K. Ono, T. Tatsumi
- Organizer
  Proc. 35th International Symposium on Dry Process (DPS)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Optimization problems for plasma-induced damage - A concept for plasma-induced damage design
- Author(s)
  K. Eriguchi, Y. Nakakubo, A. Matsuda, M. Kamei, Y. Takao, K. Ono
- Organizer
  IEEE Proc. Int. Conf. on Integrated Circuit Design & Technol. (ICICDT)
- Place of Presentation
  Austin, Texas
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Scenario of plasma-induced physical damage in FinFET-the effects of "straggling" of incident ions by a range theory-
- Author(s)
  K. Eriguchi, A. Matsuda, Y. Takao, K. Ono
- Organizer
  Proc. 35th International Symposium on Dry Process (DPS)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Experimental evidence of layout-dependent low-k damage during plasma processing - Role of "near-field" in damage creation -
- Author(s)
  T. Ikeda, K. Eriguchi, A. Tanihara, S. Kasai, K. Ono
- Organizer
  36th International Symposium on Dry Process (DPS)
- Place of Presentation
  Yokohama, Japan
- Year and Date
  2014-11-27 – 2014-11-28
- Data Source
  KAKENHI-PROJECT-25630293
[Presentation] Molecular Dynamics Analysis of Surface Reaction Kinetics during Si Etching in Cl-based Plasmas
- Author(s)
  N. Nakazaki, Y. Takao, K. Eriguchi, and K. Ono
- Organizer
  66th Annual Gaseous Electronics Conference (GEC2013)
- Place of Presentation
  Princeton, NJ, USA
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] Plasma Etch Challenges for Nanoscale Device Fabrication: Modeling, Analysis, and Control of Plasma-Surface Interactions
- Author(s)
  K. Ono
- Organizer
  9th Asian-European International Conference on Plasma Surface Engineering (AEPSE2013)
- Place of Presentation
  Jeju, South Korea
- Invited
- Data Source
  KAKENHI-PLANNED-21110008
[Presentation] Improved hardness and electrical property of c-BN thin films by magnetically enhanced plasma ion plating technique
- Author(s)
  M. Noma, K. Eriguchi, Y. Takao, N. Terayama, K. Ono
- Organizer
  Proc. 35th International Symposium on Dry Process (DPS)
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Three-Dimensional Parameter Mapping of Annealing Process for HBr/O_2 -Plasma- Induced Damages in Si Substrates
- Author(s)
  A. Matsuda, Y. Nakakubo, M. Fukasawa, Y. Takao, T. Tatsumi, K. Eriguchi, K. Ono
- Organizer
  Proc. 34th International Symposium on Dry Process (DPS)
- Place of Presentation
  Tokyo
- Data Source
  KAKENHI-PROJECT-23360321
[Presentation] Molecular dynamics analysis of Si etching in HBr-based Plasmas: Effects of neutral radicals
- Author(s)
  N. Nakazaki, Y. Takao, K. Eriguchi, and K. Ono
- Organizer
  35th International Symposium on Dry Process (DPS 2013)
- Place of Presentation
  Jeju, South Korea
- Data Source
  KAKENHI-PLANNED-21110008

1. ERIGUCHI Koji (70419448)

# of Collaborated Projects: 9 results

# of Collaborated Products: 159 results
2. TAKAHASHI Kazuo (50335189)

# of Collaborated Projects: 6 results

# of Collaborated Products: 19 results
3. SETSUHARA Yuichi (80236108)

# of Collaborated Projects: 5 results

# of Collaborated Products: 13 results
4. TAKAO Yoshinori (80552661)

# of Collaborated Projects: 3 results

# of Collaborated Products: 59 results
5. SHIRATANI Masaharu (90206293)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. TERASHIMA Kazuo (30176911)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. SHIRAFUJI Tatsuru (10235757)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. SASAKI Kouichi (50235248)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
9. ITO Masafumi (10232472)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. TOCHIKUBO Fumiyoshi (90244417)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. GOTO Motonobu (80170471)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
12. NAGATSU Masaaki (20155948)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. KOMATSU Shojiro (60183810)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. UCHIDA Satoshi (90305417)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. OTA Takayuki (10379612)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. KOGA Kazunori (90315127)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. TACHIBANA Kunihide (40027925)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. NAKAMURA Toshihiro (90293886)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. YASAKA Yasuyoshi (30109037)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. MIYAKE Shoji (40029286)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
21. SHOJI Tatsuo (50115581)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. FUJITA Masayuki (30260178)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
23. HASHIDA Masaki (50291034)

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
24. 長谷川繁彦 (50189528)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
25. KUMAGAI Masao

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
26. NOMA MASAO

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
27. 太田裕朗

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
28. 緒方潔

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Ono Kouichi 斧 高一

ONO Kouichi 斧 高一

Research Projects

Research Products

Co-Researchers

Plasma-Induced Formation of Nanoscale Ripple Structures on SurfacesPrincipal Investigator

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Plasma-Surface Interactions during Plasma Etching for Next-Generation Nanoscale Device FabricationPrincipal Investigator

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Plasma-Surface Interactions for Nanometer-scale Plasma Etching ProcessesPrincipal Investigator

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マイクロプラズマスラスタの研究開発:高温反応場と高速流れ場の競合現象の解明と制御Principal Investigator

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A Study of Plasma Chemistry in the Gas Phase and on Surfaces during Plasma Etching in Chlorine-and Bromine-Containing PlasmasPrincipal Investigator

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マイクロプラズマスラスターの研究開発Principal Investigator

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表面波励起プラズマを用いた超小型プラズマスラスターの研究開発Principal Investigator

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A Study of the Particle Transport and Surface Reactions in Microstructures on Substrates during Plasma ProcessingPrincipal Investigator

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Ono Kouichi 斧高一

ONO Kouichi 斧高一

[Book] プラズマプロセス技術 (第4章ナノエッチング技術, 分担執筆)2017

[Book] High-k 膜のドライエッチングナノエレクトロニクスにおける絶縁超薄膜技術-成膜技術と膜・界面の物性科学-, 第5編, 第4章2012

[Book] プラズマエッチングにおける表面反応機構マイクロ・ナノデバイスのエッチング技術式田光宏他監修, 第二編, 第2章2009

[Book] 「マイクロ・ナノデバイスのエッチング技術」,式田光宏・佐藤一雄・田中浩監修第二編,第2章"プラズマエッチングにおける表面反応機構"2009

[Book] 「2007半導体テクノロジー大全」第4編第4章第5節"高誘電体/電極材料エッチング技術"2007

[Book] 2007半導体テクノロジー大全(第4編第4章第5節"高誘電体/電極材料エッチング技術")2007