TAKANASHI Yoshifumi 高梨良文

Researcher Number	30318224
Other IDs
Affiliation (based on the past Project Information) *help	2011: 東京理科大学, 基礎工学研究科, 教授 2009 – 2011: Tokyo University of Science, 基礎工学部, 教授 2005 – 2007: 東京理科大学, 基礎工学部, 教授 2003: TAKANASHI,Yoshifumi, 材料工学部, 教授 2001 – 2003: 東京理科大学, 基礎工学部・材料工学科, 教授
Review Section/Research Field	Principal Investigator 電力工学・電気機器工学 / 電力工学・電気機器工学 / Electron device/Electronic equipment
Keywords	Principal Investigator マグネシウムシリサイド / 環境半導体 / Wasted heat / Thermoelectric / Magnesium siliside / 放電プラズマ焼結 / 結晶育成 / 半導体 / 熱電変換 / Alumina crucible … More / Pure graphite / Magnegium silicide / Silicides / Thermoelectric materials / Environmentally-friendly semiconductor / アルミナるつぼ / 高純度焼結カーボン / シリサイド / 熱電変換材料 / Auger再結合 / 超高速応答 / III-V化合物半導体 / 光検出デバイス / 集積回路 / 電子デバイス Less

Ultra-high speed opto-electronic devicesPrincipal Investigator
- Principal Investigator
  
  TAKANASHI Yoshifumi
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo University of Science
Fabrication of Mg2Si thermal-to-electric energy conversion device using die-casting sysnthesis methodPrincipal Investigator
- Principal Investigator
  
  TAKANASHI Yoshifumi
- Project Period (FY)
  2005 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電力工学・電気機器工学
- Research Institution
  Tokyo University of Science
Development of the discrete electric power-generator from exhaust or waste heat sources using ecologically friendly semiconductorsPrincipal Investigator
- Principal Investigator
  
  TAKANASHI Yoshifumi
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電力工学・電気機器工学
- Research Institution
  Tokyo University of Science

All 2012 2011 2010 2009 2008 2007 Other

All Journal Article Presentation

[Journal Article] Characteristics of PHEMTs and MSM photodetectors simultaneously fabricated on same epitaxial wafer with In0.75Ga0.25As/InGaAs channel layer2012
- Author(s)
  Yuta Koreeda, Yutaka Endo, Kouichi Sato, Kenya Yoshizawa, Yui Nishio, Hirohisa Taguchi, Tsutomu Iida and Yoshifumi Takanashi
- Journal Title
  
  PHYSICA STATUS SOLIDI(C)
  
  Volume: 9 Pages: 357-360
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560365
[Journal Article] Thermoelectric Behavior of Sb-and Al-Doped n-Type Mg2Si Device Under Large Temperature Differences2011
- Author(s)
  T. Sakamoto, T. Iida, S. Kurosaki, K. Yano, H. Taguchi, K. Nishio, and Y. Takanashi
- Journal Title
  
  JOURNAL OF ELECTRONIC MATERIALS
  
  Volume: 40 Pages: 629-634
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560365
[Journal Article] Thermoelectric characteristics of commercialized Mg2Si source doped with Al, Bi, Ag and Cu2010
- Author(s)
  T. Sakamoto, T. Iida, J. Sato, A. Matsumoto, Y. Honda, T. Nemoto, J. Sato, T. Nakajima, H. Taguchi, and Y. Takanashi
- Journal Title
  
  JOURNAL OF ELECTRONIC MATERIALS
  
  Volume: 39 Pages: 1708-1713
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560365
[Journal Article] Direct thermal-to-electric energy conversion material of environmentally-benign Mg2Si synthesized using wasted Si sludge and recycled Mg alloy2010
- Author(s)
  Y. Honda, T. Iida, T. Sakamoto, S. Sakuragi, Y. Taguchi, Y. Mito, T. Nemoto, T. Nakajima, H. Taguchi, K. Nishio, and Y. Takanashi
- Journal Title
  
  Mater. Res. Soc. Proc.
  
  Volume: Vol.1218 Pages: 1218-1218
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560365
[Journal Article] Characteristics of a pin-fin structure thermal-to-electric uni-leg device using a commercial n-type Mg2Si source2010
- Author(s)
  T. Nemoto, T. Iida, J. Sato, Y. Oguni, A. Matsumoto, T. Miyata, T. Sakamoto, T. Nakajima, H. Taguchi, K. Nishio, and Y. Takanashi
- Journal Title
  
  JOURNAL OF ELECTRONIC MATERIALS
  
  Volume: 39 Pages: 1572-1578
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560365
[Journal Article] Dependence of Optical Response Time on Gate-to-Source Voltage for InAlAs/InAs/InGaAs Pseudomorphic High Electron2010
- Author(s)
  Takahisa Ando, Hirohisa Taguchi, Kazuya Uchimura, Miho Mochiduki, Tsutomu Iida and Yoshifumi Takanashi
- Journal Title
  
  Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials
  
  Pages: 856-857
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560365
[Journal Article] Ultrafast Optical Response of InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors2010
- Author(s)
  Hirohisa Taguchi, Yasuyuki Oishi, Takahisa Ando, Kazuya Uchimura, Miho Mochiduki, Mitsuhiro Enomoto, Tsutomu Iida, and Yoshifumi Takanashi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 49
- NAID
  210000068263
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560365
[Journal Article] Ultra-Fast Optical Response by InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors2009
- Author(s)
  Hirohisa Taguchi, Yasuyuki Oishi, Takahisa Ando, Kazuya Uchimura, Miho Mochiduki, Mitsuhiro Enomoto, Tsutomu Iida and Yoshifumi Takanashi
- Journal Title
  
  Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials
  
  Pages: 946-947
- NAID
  210000068263
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560365
[Journal Article] InAlAs/InAs/InGaAs pseudomorphic high electron mobility transistors exhibiting ultra-fast optical response2009
- Author(s)
  Hirohisa Taguchi, Nobuhito Wakimura, Yugo Nakagawa, Tsutomu Iida, and Yoshifumi Takanashi
- Journal Title
  
  Physica status solidi
  
  Volume: (c) 6 Pages: 1386-1389
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560365
[Journal Article] Thermoelectric properties of Sb-doped sintered Mg2Si fabricated using commercial polycrystalline sources2009
- Author(s)
  N. Fukushima, T. Iida, M. Akasaka, T. Nemoto, T. Sakamoto, R. Kobayashi, H. Taguchi, K. Nishio and Y. Takanashi
- Journal Title
  
  Res. Soc. Proc.
  
  Volume: 1166
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560365
[Journal Article] Materials Research Society Symposium Proceedings 11082009
- Author(s)
  Nobuhito Wakimura, Yugo Nakagawa, Hirohisa Taguchi, Tsutomu Iida, and Yoshifumi Takanashi
- Volume
  1108
- Pages
  2-8
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560365
[Journal Article] Output power characteristics of Mg2Si and the fabrication of a Mg2Si TE module with a uni-leg structure2009
- Author(s)
  T. Nemoto, T. Iida, Y. Oguni, J. Sato, A. Matsumoto, T. Sakamoto, T. Miyata, T. Nakajima and Y. Takanashi
- Journal Title
  
  Materials and Devices for Thermal-to-Electric Energy Conversion Mater
  
  Volume: Proc. 1166
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21560365
[Journal Article] The thermoelectric properties of bulk crystals of n-, p-type Mg2Si prepared by the vertical Bridgman method2008
- Author(s)
  M. Akasaka, T. Iida, A. Matsumoto, K. Yamanaka, Y. Takanashi, T. Imai, N. Hamada
- Journal Title
  
  Journal of Applied Physics 104
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360130
[Journal Article] Non-wetting crystal growth of Mg2Si by vertical Bridgman method and thermoelectric characteristics2007
- Author(s)
  M. Akasaka, T. Iida, J. Soga, N. Kato, T. Sakuma, Y. Higuchi, Y. Takanashi
- Journal Title
  
  Journal of Crystal Growth 304
  
  Pages: 196-201
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360130
[Journal Article] Fabrication of Mg2Si from a Reused-silicon Source and its Thermoelectric Characteristics
- Author(s)
  M. Akasaka, T. Iida, Y. Mito, T. Omori, Y. Oguni, S. Yokoyama, K. Nishio, Y. Takanashi
- Journal Title
  
  Thermoelectric Power Generation (Mater. Res. Soc. Proc. Vol. 1044), ed. by T. P. Hogan, J. Yang, R. Funahashi, T. Tritt, (Mater. Res. Soc., 2008)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360130
[Journal Article] Formation of transition-metal-based ohmic contacts to n-Mg2Si by plasma activated sintering
- Author(s)
  Y. Oguni, T. Nemoto, T. Iida, J. Onosaka, H. Takaniwa, M. Akasaka, J. Sato, T. Nakajima, Y. Takanashi
- Journal Title
  
  Thermoelectric Power Generation (Mater. Res. Soc. Proc. Vol. 1044), ed. by T. P. Hogan, J. Yang, R. Funahashi, T. Tritt, (Mater. Res. Soc., 2008)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360130
[Presentation] In0.75Ga0.25As/In0.53Ga0.47As同一基板上に作製したPHEMTの周波数特性2011
- Author(s)
  山崎陽一、是枝勇太、西尾結、遠藤裕、佐藤宏一、芳沢研哉、田口博久、高梨良文
- Organizer
  第72回応報物理学会学術講演会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-21560365
[Presentation] Characteristics of PHEMTs and MSM photodetectors simultaneously fabricated on the same epitaxial wafer with In0.75Ga0.25As/InGaAs channel layer2011
- Author(s)
  Hirohisa Taguchi, Yuta koreeda, Yutaka Endo, kouichi Sato, Kenya Yoshizawa, Yui Nishio, Tsutomu Iida and Yoshifumi Takanashi
- Organizer
  38th International Symposium on Compound Semiconductors-ISCS
- Place of Presentation
  Berlin
- Data Source
  KAKENHI-PROJECT-21560365
[Presentation] In0.75Ga0.25As/In0.53Ga0.47As同一基板上に作製したPMSM-PDの応答特性2011
- Author(s)
  西尾結、是枝勇太、山崎陽一、渡邉亮、田口博久、高梨良文
- Organizer
  第72回応報物理学会学術講演会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-21560365
[Presentation] InAlAs/InAs/OnGaAs-PHEMTの直流及び高周波特性2010
- Author(s)
  遠藤裕、安藤貴寿、是枝勇太、佐藤宏一、吉澤研哉、田口博久、高梨良文
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Data Source
  KAKENHI-PROJECT-21560365
[Presentation] Dependence of Optical Response Time on Gate-to-Source Voltage for InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors2010
- Author(s)
  Takahisa Ando, Hirohisa Taguchi, Kazuya Uchimura, Miho Mochiduki, Tsutomu Iida and Yoshifumi Takanashi
- Organizer
  2010 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tokyo Univ.
- Data Source
  KAKENHI-PROJECT-21560365
[Presentation] InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistorsのゲートソース間電圧による光応答時間の依存性2010
- Author(s)
  是枝勇太、安藤貴寿、遠藤裕、佐藤宏一、吉澤研哉、田口博久、高梨良文
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Data Source
  KAKENHI-PROJECT-21560365

1. IIDA Tsutomu (20297625)

# of Collaborated Projects: 2 results

# of Collaborated Products: 4 results
2. TAGUCHI Hirohisa (30453830)

# of Collaborated Projects: 1 results

# of Collaborated Products: 17 results
3. NISHIO Keishi (90307710)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results

TAKANASHI Yoshifumi 高梨 良文

Research Projects

Research Products

Co-Researchers

Ultra-high speed opto-electronic devicesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Fabrication of Mg2Si thermal-to-electric energy conversion device using die-casting sysnthesis methodPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of the discrete electric power-generator from exhaust or waste heat sources using ecologically friendly semiconductorsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Characteristics of PHEMTs and MSM photodetectors simultaneously fabricated on same epitaxial wafer with In0.75Ga0.25As/InGaAs channel layer2012

Author(s)

Journal Title

Data Source

[Journal Article] Thermoelectric Behavior of Sb-and Al-Doped n-Type Mg2Si Device Under Large Temperature Differences2011

Author(s)

Journal Title

Data Source

[Journal Article] Thermoelectric characteristics of commercialized Mg2Si source doped with Al, Bi, Ag and Cu2010

Author(s)

Journal Title

Data Source

[Journal Article] Direct thermal-to-electric energy conversion material of environmentally-benign Mg2Si synthesized using wasted Si sludge and recycled Mg alloy2010

Author(s)

Journal Title

Data Source

[Journal Article] Characteristics of a pin-fin structure thermal-to-electric uni-leg device using a commercial n-type Mg2Si source2010

Author(s)

Journal Title

Data Source

[Journal Article] Dependence of Optical Response Time on Gate-to-Source Voltage for InAlAs/InAs/InGaAs Pseudomorphic High Electron2010

Author(s)

Journal Title

Data Source

[Journal Article] Ultrafast Optical Response of InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors2010

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Ultra-Fast Optical Response by InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors2009

Author(s)

Journal Title

NAID

Data Source

[Journal Article] InAlAs/InAs/InGaAs pseudomorphic high electron mobility transistors exhibiting ultra-fast optical response2009

Author(s)

Journal Title

Data Source

[Journal Article] Thermoelectric properties of Sb-doped sintered Mg2Si fabricated using commercial polycrystalline sources2009

Author(s)

Journal Title

Data Source

[Journal Article] Materials Research Society Symposium Proceedings 11082009

Author(s)

Volume

Pages

Data Source

[Journal Article] Output power characteristics of Mg2Si and the fabrication of a Mg2Si TE module with a uni-leg structure2009

Author(s)

Journal Title

Data Source

[Journal Article] The thermoelectric properties of bulk crystals of n-, p-type Mg2Si prepared by the vertical Bridgman method2008

Author(s)

Journal Title

Description

Data Source

[Journal Article] Non-wetting crystal growth of Mg2Si by vertical Bridgman method and thermoelectric characteristics2007

Author(s)

TAKANASHI Yoshifumi 高梨良文