Okada Hiroshi 岡田浩

… Alternative Names

OKADA Hiroshi 岡田浩

岡田浩オカダヒロシ

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Researcher Number	30324495
Other IDs
External Links
Affiliation (Current)	2025: 豊橋技術科学大学, 総合教育院, 教授 2025: 豊橋技術科学大学, 工学(系)研究科(研究院), 教授
Affiliation (based on the past Project Information) *help	2017 – 2023: 豊橋技術科学大学, 工学(系)研究科(研究院), 教授 2011 – 2015: 豊橋技術科学大学, エレクトロニクス先端融合研究所, 准教授 2010: 豊橋技術科学大学, エレクトロコクス先端融合研究所, 准教授 2006 – 2007: 豊橋技術科学大学, 工学部, 講師 2005: 豊橋技術科学大学, 工学部, 助手 2001 – 2002: 豊橋技術科学大学, 工学部, 助手
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / Basic Section 21060:Electron device and electronic equipment-related / Basic Section 21050:Electric and electronic materials-related / Electronic materials/Electric materials Except Principal Investigator Basic Section 20020:Robotics and intelligent system-related / Electron device/Electronic equipment / Applied materials science/Crystal engineering
Keywords	Principal Investigator 窒化物半導体 / 集積回路 / イオン注入 / 絶縁膜形成技術 / 集積回路技術 / 過酷環境エレクトロニクス / プロセス技術 / トランジスタ / 電子デバイス / モノリシック集積 … More / 絶縁膜体積技術 / 素子分離技術 / 絶縁膜堆積技術 / 電極形成 / モノリシック集積回路 / 窒化物半導体デバイス / 半導体プロセス技術 / 耐環境性デバイス / 絶縁ゲート構造 / 窒化物半導体におけるダメージ評価 / 欠陥評価 / イオン注入技術 / 異種基板接合 / 表面パッシベーション / LED / 半導体欠陥評価 / デバイス作製技術 / 一体化技術 / シリコン集積回路 / 2次元電子ガス / ２次元電子ガス / AlGaN/GaN / ヘテロ構造 / 高電子移動度トランジスタ / 希土類元素 / 発光デバイス / 電流-電圧特性 / 原子間力顕微鏡 / 電極構造 / 量子デバイス / 温度依存性 / ナノチューブトランジスタ / ゲートバイアス制御 / 単一電子トランジスタ / 化学気相成長法 / ナノデバイス / 位置方向制御形成 / カーボンナノチューブ … More Except Principal Investigator 圧電アクチュエータ / 超音波モータ / マイクロロボット / マイクロモータ / アクチュエータ / Optoelectronics / III-Nitrides / Rare-earth element / 発光過程 / ヘテロエピタキシャル成長 / 光電子集積 / III族窒化物 / ウエハ融着 / 光電子集積回路 / 発光特性 / 窒化物半導体 / 希土類 / 電子顕微鏡 / 微細加工技術 / MOSデバイス / ポストシリコン材料 / 量子効果デバイス / 電界効果デバイス / 電流-電圧特性 / 原子間力顕微鏡 / 電極構造 / 量子デバイス / 電子デバイス / カーボンナノチューブ Less

集積回路技術を適用した窒化物半導体ヘテロ構造のモノリシック集積回路Principal Investigator
- Principal Investigator
  
  岡田浩
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Toyohashi University of Technology
Investigation of process technology for nitride semiconductor based integrated circuits for harsh environment electronicsPrincipal Investigator
- Principal Investigator
  
  OKADA Hiroshi
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Toyohashi University of Technology
Study on Capsule Endoscopic Robot Technologies inside Gastrointestinal Tract
- Principal Investigator
  
  Mashimo Tomoaki
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 20020:Robotics and intelligent system-related
- Research Institution
  Toyohashi University of Technology
GaN-based integrated electronics operable in harsh environmentPrincipal Investigator
- Principal Investigator
  
  Okada Hiroshi
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Toyohashi University of Technology
Wafer level integration of nitride semiconductor device and Si CMOS integrated circuit for sensor applicationPrincipal Investigator
- Principal Investigator
  
  Okada Hiroshi
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Toyohashi University of Technology
Rare-earth doped gallium nitride semiconductor light emitting device and their applicationPrincipal Investigator
- Principal Investigator
  
  OKADA Hiroshi
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Toyohashi University of Technology
Development of Optoelectronic Integrated Devices based on BIN-RE alloy semiconductor and Si
- Principal Investigator
  
  WAKAHARA Akihiro
- Project Period (FY)
  2005 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Toyohashi University of Technology
カーボンナノチューブを用いた電子デバイスの電極構造の評価と量子デバイスへの応用Principal Investigator
- Principal Investigator
  
  岡田浩
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Toyohashi University of Technology
カーボンナノチューブの電界効果およびトランジスタへの応用
- Principal Investigator
  
  吉田明
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Toyohashi University of Technology

[Journal Article] Electrical and X-ray Photoelectron Spectroscopy Studies of Ti/Al/Ti/Au Ohmic Contacts to AlGaN/GaN2024
- Author(s)
  H. Okada, M. Fukinaka, and Y. Akira
- Journal Title
  
  IEICE Transaction on Electronics
  
  Volume: E107-C
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23K03956
[Journal Article] AlGaN/GaN 高電子移動度トランジスタの集積化に向けた素子分離技術の検討2023
- Author(s)
  赤松龍弥、秋良芳樹、岡田浩
- Journal Title
  
  電子情報通信学会技術報告
  
  Volume: SDM2023-25 Pages: 32-35
- Data Source
  KAKENHI-PROJECT-20K04579
[Journal Article] AlGaN/GaNヘテロ構造の TiAl 系オーミック電極の基礎的検討2022
- Author(s)
  吹中茉生、秋良芳樹、岡田浩
- Journal Title
  
  電子情報通信学会技術報告
  
  Volume: SDM2022-23 122 Pages: 39-42
- Data Source
  KAKENHI-PROJECT-20K04579
[Journal Article] Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures2020
- Author(s)
  Sato Shin-ichiro、Deki Manato、Nishimura Tomoaki、Okada Hiroshi、Watanabe Hirotaka、Nitta Shugo、Honda Yoshio、Amano Hiroshi、Ohshima Takeshi
- Journal Title
  
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
  
  Volume: 479 Pages: 7-12
- DOI
  10.1016/j.nimb.2020.06.007
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20K04579, KAKENHI-PROJECT-18H01483
[Journal Article] GaN‐Based Monolithic Inverter Consisting of Enhancement‐ and Depletion‐Mode MOSFETs by Si Ion Implantation2019
- Author(s)
  Okada Hiroshi、Miwa Kiyomasa、Yokoyama Taichi、Yamane Keisuke、Wakahara Akihiro、Sekiguchi Hiroto
- Journal Title
  
  physica status solidi (a)
  
  Volume: 217 Issue: 3 Pages: 1900550-1900550
- DOI
  10.1002/pssa.201900550
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K06383
[Journal Article] 窒化物半導体集積回路プロセスの検討～ Siイオン注入による閾値制御の試み～2019
- Author(s)
  岡田浩 , 横山太一 , 三輪清允 , 山根啓輔 , 若原昭浩 , 関口寛人
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 119 Pages: 77-80
- Data Source
  KAKENHI-PROJECT-17K06383
[Journal Article] Fabrication of Si/SiO2/GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices2016
- Author(s)
  Kazuaki Tsuchiyama, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, and Akihiro Wakahara
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 5S Pages: 05FL01-05FL01
- DOI
  10.7567/jjap.55.05fl01
- NAID
  210000146564
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420330
[Journal Article] Investigation of HCl-based surface treatment for GaN devices2016
- Author(s)
  Hiroshi Okada, Masatohi Shinohara, Yutaka Kondo, Hiroto Sekiguchi, Keisuke Yamane and Akihiro Wakahara
- Journal Title
  
  AIP Conference Proceedings
  
  Volume: 1709 Pages: 020011-020011
- DOI
  10.1063/1.4941210
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25420330
[Journal Article] Chemical vapor deposition of silicon nitride film enhanced by surface-wave plasma for surface passivation of AlGaN/GaN device2015
- Author(s)
  H. Okada, K. Kawakami, M. Shinohara, T. Ishimaru, H. Sekiguchi, A. Wakahara and M. Furukawa
- Journal Title
  
  AIP Conference Proceedings
  
  Volume: 41 Pages: 41-46
- DOI
  10.1063/1.4913542
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25420330
[Journal Article] High Proton Radiation Tolerance of InAsSb Quantum-Well-Based micro-Hall Sensors2014
- Author(s)
  Abdelkader Abderrahmane, Pil Ju Ko, Hiroshi Okada, Shin-Ichiro Sato, Takeshi Ohshima, Ichiro Shibasaki, Adarsh Sandhu
- Journal Title
  
  IEEE ELECTRON DEVICE LETTERS
  
  Volume: 35 Issue: 12 Pages: 1305-1307
- DOI
  10.1109/led.2014.2359879
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420330
[Journal Article] Proton Irradiation Enhancement of Low-Field Negative Magnetoresistance Sensitivity of AlGaN/GaN-Based Magnetic Sensor at Cryogenic Temperature2014
- Author(s)
  Abdelkader Abderrahmane, Pil Ju Ko, Hiroshi Okada, Shin-Ichiro Sato, Takeshi Ohshima, Adarsh Sandhu
- Journal Title
  
  IEEE ELECTRON DEVICE LETTERS
  
  Volume: 35 Issue: 11 Pages: 1130-1132
- DOI
  10.1109/led.2014.2358613
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420330
[Journal Article] Effect of annealing on proton irradiated AlGaN/GaN based micro-Hall sensors2014
- Author(s)
  A. Abderrahmane, H. Takahashi, T. Tashiro, P. J. Ko, H. Okada, S. Sato, T. Ohshima and A. Sandhu
- Journal Title
  
  AIP Conference Proceedings
  
  Volume: 1585 Pages: 123-127
- DOI
  10.1063/1.4866629
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420330
[Journal Article] Study of Proton Irradiation Effects on p- and n-Type GaN Based-on Two-Terminal Resistance Dependence on 380keV Proton Fluence2014
- Author(s)
  H. Okada, Y. Okada, H. Sekiguchi, A. Wakahara, S. Sato, and T. Ohshima
- Journal Title
  
  IEICE Trans. Electron.
  
  Volume: E97.C Issue: 5 Pages: 409-412
- DOI
  10.1587/transele.E97.C.409
- NAID
  130004519108
- ISSN
  0916-8524, 1745-1353
- Language
  English
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420330
[Journal Article] Organometallic chemical vapor deposition of silicon nitride films enhanced by atomic nitrogen generated from surface-wave plasma2014
- Author(s)
  H. Okada, M. Kato, T. Ishimaru, M. Furukawa, H. Sekiguchi, and A. Wakahara
- Journal Title
  
  AIP Conference Proceedings
  
  Volume: 1585 Pages: 64-67
- DOI
  10.1063/1.4866620
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420330
[Journal Article] Partial recovery of the magnetoelectrical properties of AlGaN/GaN-based micro-Hall sensors irradiated with protons2014
- Author(s)
  A. Abderrahmane, T. Tashiro, H. Takahashi, P. J. Ko, H. Okada, S. Sato, T. Ohshima, and A. Sandhu
- Journal Title
  
  Applied Physics Letters
  
  Volume: 104 Issue: 2
- DOI
  10.1063/1.4861902
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25420330
[Journal Article] Effect of Proton Irradiation on 2DEG in AlGaN/GaN Heterostructures2013
- Author(s)
  A.Abderrahmane, S.Koide, T.Tahara, S. Sato, T.Ohshima, H.Okada and A.Sandhu
- Journal Title
  
  Journal of Physics Conference Series
  
  Volume: 433 Pages: 12011-12011
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560328
[Journal Article] Effects of Proton Irradiation on the Magnetoelectric Properties of 2DEG AlGaN/GaN Micro-Hall Sensors2012
- Author(s)
  H.Okada, A.Abderrahmane, S.Koide, H.Takahashi, S.Sato, T.Ohshima and A.Sandhu
- Journal Title
  
  Journal of Physics Conference Series
  
  Volume: Vol.352 Pages: 12010-12010
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560328
[Journal Article] Investigation of Europium Ion-implantaion into Single- and Double-hetero AlGaN/GaN for Light Emitting Transistor2012
- Author(s)
  Hiroshi Okada
- Journal Title
  
  JAEA-Review
  
  Volume: 46 Pages: 16-16
- Data Source
  KAKENHI-PROJECT-22560328
[Journal Article] Robust Hall Effect Magnetic Field Sensors for Operation at High Temperatures and in Harsh Radiation Environments2012
- Author(s)
  Abdelkader Abderrahmane , ShotaKoide , Shin-Ichiro Sato , Takeshi Ohshima , Adarsh Sandhu , and, Hiroshi Okada
- Journal Title
  
  IEEE TRANSACTIONS ON MAGNETICS
  
  Volume: Vol.48 Pages: 4421-4423
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560328
[Journal Article] Effect of Mg codoping on Eu3+ luminescence in GaN grown by ammonia molecular beam epitaxy2012
- Author(s)
  Yasufumi Takagi, Takanobu Suwa, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara
- Journal Title
  
  Applied Physics Letters
  
  Volume: 99 Issue: 17 Pages: 171905-171905
- DOI
  10.1063/1.3656018
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560328
[Journal Article] Effects of Proton Irradiation on the Magnetoelectric Properties of 2DEG AlGaN/GaN Micro-Hall Sensors2012
- Author(s)
  H.Okada, A.Abderrahmane, S.Koide, H.Takahashi, S.Sato, T.Ohshima, A.Sandhu
- Journal Title
  
  Journal of Physics Conference Series
  
  Volume: 352 Pages: 12010-12010
- DOI
  10.1088/1742-6596/352/1/012010
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560328
[Journal Article] Integration of Micro-Light-Emitting-Diode Arrays and Silicon Driver for Heterogeneous Optoelectronic Integrated Circuit Device2012
- Author(s)
  S.B.Shin, K.Iijima, J.Chiba, H.Okada, S.Iwayama, and A.Wakahara
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: Vol.50
- NAID
  210000138708
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560328
[Journal Article] ntelligent Ultraviolet Sensor Composed of GaN-Based Photodiode and N-Channel Metal Oxide Semiconductor Si-Charge Transfer Type Signal Processor2012
- Author(s)
  C.Y.Lee, F.Matsuno, Y.Hashimoto, H.Okada, K.Sawada, and A.Wakahara
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: Vol.51 Pages: 44101-44101
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560328
[Journal Article] Effect of Mg codoping on Eu3+luminescence in GaN grown by ammonia molecular beam epitaxy2011
- Author(s)
  Yasufumi Takagi, Takanobu Suwa, Hiroto Sekiguchi, Hiroshi Okada, and Akihiro Wakahara
- Journal Title
  
  Applied Physics Letters
  
  Volume: Vol.99 Pages: 171905-171905
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560328
[Journal Article] Eu 添加 AlGaN/GaN HEMT 構造を用いた発光素子の検討2010
- Author(s)
  近藤正樹、秦貴幸、岡田浩、若原昭浩・古川雄三
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 110巻 Pages: 11-16
- NAID
  110007999961
- Data Source
  KAKENHI-PROJECT-22560328
[Journal Article] Investigation of Tb-related green emission in group-III nitrides by time-resolved photoluminescence measurements2008
- Author(s)
  A. Wakahara, K. Takemoto, F. Oikawa, H. Okada, T. Ohshima, H. Itoh
- Journal Title
  
  phys. stat. solodi(a) Vol.205,(1)
  
  Pages: 56-59
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360160
[Journal Article] 380 keV proton irradiation effects on photoluminescence f Eu-doped GaN2008
- Author(s)
  H.Okada, Y.Nakanishi, A.Wakahara, A.Yoshida, T.Ohshima
- Journal Title
  
  Nuclear Instruments and Methods in Physics Researth B 266
  
  Pages: 853-856
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17360160
[Journal Article] 380 keV proton irradiation effects on photoluminescence of Eu-doped GaN2008
- Author(s)
  H. Okada, Y. Nakanishi, A. Wakahara, A. Yoshida, T. Ohshima
- Journal Title
  
  Nuclear Instruments and Methods in Physics Research B Vol.266
  
  Pages: 853-856
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360160
[Journal Article] 380 keV proton irradiation effects on photoluminescence f Eu-doped GaN2008
- Author(s)
  H. Okada, Y. Nakanishi, A. Wakahara, A. Yoshida, T. Ohshima
- Journal Title
  
  Nuclear Instruments and Methods in Physics Research B 266
  
  Pages: 853-856
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17360160
[Journal Article] Investigation of Tb-related green emission in group-III nitrides by time-resolved photoluminescence measurements2007
- Author(s)
  A.Wakahara, K.Takemoto, F.Oikawa, H.Okada, T.Ohshima, and H.ltoh
- Journal Title
  
  Physica Status Solodi(a) 205
  
  Pages: 56-59
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17360160
[Journal Article] Investigation of Tb-related green emission in group-III nitrides by time-resolved photoluminescence measurements2007
- Author(s)
  A. Wakahara, K. Takemoto, F. Oikawa, H. Okada, T. Ohshima, and H. Itoh
- Journal Title
  
  Physica Status Solodi(a) 205
  
  Pages: 56-59
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17360160
[Journal Article] Enhancement of Tb-related cathodoluminescence in Al_xGa_<1-x>N (0【less than or equal】x【less than or equal】1)2005
- Author(s)
  A.Wakahara, Y.Nakanishi, T.Fujiwara, H.Okada, A.Yoshida, T.Ohshima, T.Kamiya
- Journal Title
  
  Phys.Stat.Solidi (a) Vol.202, No.5
  
  Pages: 863-867
- Data Source
  KAKENHI-PROJECT-17360160
[Journal Article] Enhancement of Th-related cathodeluminescence in AI_xGai_<-x>,N (0≦x≦1)2005
- Author(s)
  A. Wakahara, Y. Nakanishi, T. Fujiwara, H. Okada, A. Yoshida, T. Ohshima, T. Kamiya
- Journal Title
  
  physica status solidi(a) Vol.202,(5)
  
  Pages: 863-867
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360160
[Journal Article] Photoluminescence properties of Eu-implanted A1_xGai_<-x>N(0≦x≦1)2005
- Author(s)
  T. Fujiwara, A. Wakahara, Y. Nakanishi, H. Okada, A. Yoshida, T. Ohshima T. Kamiya
- Journal Title
  
  physica status solidi(c) Vol.2,(7)
  
  Pages: 2805-2808
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360160
[Journal Article] Energy-back-transfer process in rare-earth doped AlGaN2005
- Author(s)
  A.Wakahara, T.Fujiwara, H.Okada, A.Yoshida, T.Ohshima, H.Itho
- Journal Title
  
  Mater.Res.Soc.Symp.Proc. Vol.866
- Data Source
  KAKENHI-PROJECT-17360160
[Journal Article] Energy-back-transfer process in rare-earth doped AIGaN2005
- Author(s)
  A. Wakahara, T. Fujiwara, H. Okada, A. Yoshida, T. Ohshima, H. Itho
- Journal Title
  
  Mater. Res. Soc. Symp. Proc Vol.866
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360160
[Presentation] AlGaN/GaN高電子移動度トランジスタの集積化に向けた素子分離技術の検討2023
- Author(s)
  赤松龍弥・秋良芳樹・岡田　浩
- Organizer
  電子情報通信学会研究会
- Data Source
  KAKENHI-PROJECT-23K03956
[Presentation] 小型アクチュエータ駆動のための窒化物半導体集積回路の検討2023
- Author(s)
  秋良芳樹、赤松龍弥、真下智昭、岡田浩
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K04579
[Presentation] Angle Resolved X-ray Photoelectron Spectroscopy Study of SiO2/GaN Formed by Atomic-Species-Enhanced Chemical Vapor Deposition2023
- Author(s)
  H. Okada, S. Yamagata, S. Shikata, A. Wakahara, M. Furukawa
- Organizer
  The 14th International Conference on Nitride Semiconductors (ICNS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K03956
[Presentation] 基底状態原子支援化学気相堆積法によるシリコン酸化膜/窒化物半導体構造のX 線光電子分光評価2023
- Author(s)
  山形翔 , 鹿田颯吾 , 古川雅一 , 若原昭浩 , 岡田浩
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K03956
[Presentation] 基底状態原子支援化学気相堆積法によるシリコン酸化膜の形成及び評価(2)2023
- Author(s)
  山形翔, 尾内亮太, 鹿田颯吾, 古川雅一, 若原昭浩, 岡田浩
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K04579
[Presentation] Electrical and X-ray Photoelectron Spectroscopy Studies of Ti/Al/Ti/Au Ohmic Contacts to AlGaN/GaN2023
- Author(s)
  H. Okada, M. Fukinaka, and Y. AKira
- Organizer
  Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K03956
[Presentation] 基底状態原子支援化学気相堆積法によるシリコン酸化膜の形成及び評価2022
- Author(s)
  尾内亮太,山形翔,古川雅一,若原昭浩,岡田浩
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K04579
[Presentation] Study of Ti/Al/Ti/Au ohmic contacts to AlGaN/GaN heterostructures2022
- Author(s)
  H. Okada, M. Fukinaka, and Y. Akira
- Organizer
  14th Topical Workshop on Heterostructure Microelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K04579
[Presentation] AlGaN/GaNヘテロ構造の TiAl 系オーミック電極の基礎的検討2022
- Author(s)
  吹中茉生、秋良芳樹、岡田浩
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会
- Data Source
  KAKENHI-PROJECT-20K04579
[Presentation] AlGaN/GaNヘテロ構造を用いたモノリシック集積回路の検討2021
- Author(s)
  川内智瑛、吹中茉生、真下智昭、岡田浩
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K04579
[Presentation] 窒化物半導体電子デバイスのプロセス開発と応用2021
- Author(s)
  岡田　浩
- Organizer
  第76回 CVD研究会
- Invited
- Data Source
  KAKENHI-PROJECT-20K04579
[Presentation] Fabrication of AlGaN/GaN transistors with SiO2 gate insulator formed by atomic oxygen at ground state extracted from a surface-wave generated plasma2019
- Author(s)
  H.Okada, M.Baba, K.Nakamura, M.Furukawa, K.Yamane, M.Sekiguchi and A.Wakahara
- Organizer
  13th Topical Workshop on Heterostructure Microelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06383
[Presentation] GaN-based Inverter by Monolithic Integration of Threshold Controlled MOSFETs2019
- Author(s)
  Hiroto Sekiguchi , Kiyomasa Miwa , Keisuke Yamane , Akihiro Wakahara , Hiroshi Okada
- Organizer
  Compound Semiconductor Week 2019 (CSW2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06383
[Presentation] 基底状態酸素原子を用いた化学気相堆積法で形成した絶縁ゲート型GaN系トランジスタの検討2019
- Author(s)
  中村健人、馬場真人、岡田浩、古川雅一、山根啓輔、関口寛人、若原昭浩
- Organizer
  第66回応用物理学会春季学術講演会,
- Data Source
  KAKENHI-PROJECT-17K06383
[Presentation] 基底状態酸素原子を用いた化学気相堆積法によるシリコン酸化膜の窒化物半導体応用2019
- Author(s)
  馬場真人、垣内佑斗、岡田浩、古川雅一、山根啓輔、関口寛人、若原昭浩
- Organizer
  第66回応用物理学会春季学術講演会,
- Data Source
  KAKENHI-PROJECT-17K06383
[Presentation] 窒化物半導体集積回路プロセスの検討～ Siイオン注入による閾値制御の試み～2019
- Author(s)
  岡田浩, 横山太一, 三輪清允, 山根啓輔, 若原昭浩, 関口寛人
- Organizer
  電子情報通信学会研究会
- Data Source
  KAKENHI-PROJECT-17K06383
[Presentation] イオン注入法による窒化物半導体の電気的特性の制御と集積回路への応用の検討(2)2018
- Author(s)
  横山太一、三輪清允、岡田浩、関口寛人、山根啓輔、若原昭浩
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06383
[Presentation] GaN系ヘテロ構造デバイスのイオン注入素子分離2018
- Author(s)
  中村健人、馬場真人、岡田浩、古川雅一、山根啓輔、関口寛人、若原昭浩
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06383
[Presentation] 2波長励起フォトルミネッセンス法によるGaNへのイオン注入ダメージ評価の検討2018
- Author(s)
  増田海斗、関口寛人、三輪清允、岡田浩、山根啓輔、若原昭浩
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06383
[Presentation] 窒化物半導体デバイス応用に向けた表面波プラズマ励起化学気相堆積法によるシリコン系絶縁膜の検討2018
- Author(s)
  馬場真人、岡田浩、古川雅一、山根啓輔、関口寛人、若原昭浩
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06383
[Presentation] 集積回路実現に向けた窒化物半導体によるMOSFETの作製2018
- Author(s)
  三輪清允，横山太一，関口寛人，山根啓輔，若原昭浩，岡田浩
- Organizer
  第37回電子材料シンポジウム
- Data Source
  KAKENHI-PROJECT-17K06383
[Presentation] 表面波プラズマ励起化学気相堆積法によるシリコン酸化膜の堆積と評価(2)2017
- Author(s)
  馬場真人、中村健人、岡田浩、古川雅一、山根啓輔、関口寛人、若原昭浩
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K06383
[Presentation] Characteristics of Silicon Dioxide Dielectric Film Formed by Chemical Vapor Deposition Enhanced by Atomic Oxygen at Ground State Extracted from a Surface-wave Generated Plasma2017
- Author(s)
  H. Okada, M. Baba, M. Furukawa, K. Yamane, H. Sekiguchi, and A. Wakahara
- Organizer
  2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K06383
[Presentation] イオン注入技術を用いたプレーナ型GaN-LEDの作製2016
- Author(s)
  上月誠也、土山和晃、山根啓輔、関口寛人、岡田浩、若原昭浩
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学 (東京都目黒区)
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25420330
[Presentation] Si/SiO2/GaN-LED構造を用いたSi-MOSFETおよびLEDのモノリシック集積2016
- Author(s)
  土山和晃、宇都宮脩、中川翔太、山根啓補、関口寛人、岡田浩、若原昭浩
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学 (東京都目黒区)
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25420330
[Presentation] MOSトランジスタ及び発光素子の一貫形成に向けたSi / SiO2 / GaN / Sapphire 構造の熱耐性に関する調査2016
- Author(s)
  宇都宮脩、立原佳樹、土山和晃、山根啓輔、関口寛人、岡田浩、若原昭浩
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学 (東京都目黒区)
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25420330
[Presentation] Study of pretreatment for surface passivation layer deposition on AlGaN/GaN transistors2015
- Author(s)
  Y. Kondo, K. Kawakami, H. Okada, H. Sekiguchi, K. Yamane and A. Wakahara
- Organizer
  11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015)
- Place of Presentation
  Hida Plaza Hotel (Hida)
- Year and Date
  2015-08-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420330
[Presentation] Fabrication of Si/SiO2/GaN-LED wafer using surface activated bonding2015
- Author(s)
  K. Tsuchiyama, K. Yamane, H. Sekiguchi, H. Okada, A. Wakahara
- Organizer
  The 6th International Symposium on Growth of III-Nitrides
- Place of Presentation
  Act City Hamamatsu, Hamamatsu
- Year and Date
  2015-11-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420330
[Presentation] Investigation of surface treatment and passivation for GaN-based transistors2015
- Author(s)
  Hiroshi Okada, Masatoshi Shinohara, Yutaka Kondo, Hiroto Sekiguchi, Keisuke Yamane, and Akihiro Wakahara
- Organizer
  The Irago Conference 2015
- Place of Presentation
  Irago Sea-Park and Spa, Tahara
- Year and Date
  2015-10-22
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25420330
[Presentation] AlGaN/GaNデバイスの表面パッシベーション膜堆積前処理の効果2015
- Author(s)
  篠原正俊、近藤佑隆、岡田浩、関口寛人、山根啓輔、若原昭浩
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25420330
[Presentation] Proton irradiation effects on p- and n-type GaN2013
- Author(s)
  H. Okada
- Organizer
  2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2013)
- Place of Presentation
  Hana Square of Korea University, Seoul, Korea
- Data Source
  KAKENHI-PROJECT-22560328
[Presentation] Metal Organic Chemical Vapor Deposition of Silicon-based Dielectric Films Enhanced by Surface-Wave Plasma2013
- Author(s)
  M.Kato, T.Ishimaru, H.Okada, M.Furukawa, H.Sekiguchi and A.Wakahara
- Organizer
  The Irago Conference 2013
- Place of Presentation
  愛知県田原市
- Data Source
  KAKENHI-PROJECT-25420330
[Presentation] Proton irradiation effects on electrical and luminescence properties of GaN-based light emitting device2013
- Author(s)
  H.Okada, Y.Okada, H.Sekiguchi, A.Wakahara, S.Sato, and T.Ohshima
- Organizer
  10th Topical Workshop on Heterostructure Microelectronics (TWHM 2013)
- Place of Presentation
  北海道函館市
- Invited
- Data Source
  KAKENHI-PROJECT-25420330
[Presentation] Proton irradiation effects on p- and n-type GaN2013
- Author(s)
  H. Okada, Y. Okada, H. Sekiguchi, A. Wakahara, S. Sato and T. Ohshima
- Organizer
  2013 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2013)
- Place of Presentation
  韓国ソウル市
- Data Source
  KAKENHI-PROJECT-25420330
[Presentation] Partially recovery of the electrical properties of AlGaN/GaN based micro-Hall sensors irradiated with protons2013
- Author(s)
  A. Abderrahmane, T. Tashiro, H. Okada, S. Sato, T. Ohshima, and A. Sandhu
- Organizer
  The Irago Conference 2013
- Place of Presentation
  愛知県田原市
- Data Source
  KAKENHI-PROJECT-25420330
[Presentation] Electrical Characterization of Damages in GaN-based Light Emitting Diode Induced by Irradiations2013
- Author(s)
  H.Okada, Y.Okada, H.Sekiguchi, A.Wakahara, S.Sato and T.Ohshima
- Organizer
  The Irago Conference 2013
- Place of Presentation
  愛知県田原市
- Data Source
  KAKENHI-PROJECT-25420330
[Presentation] Mg 共添加による GaN:Eu の発光特性向上のメカニズム2012
- Author(s)
  関口寛人,大谷龍輝,高木康文, 岡田浩,若原昭浩
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-22560328
[Presentation] NH3-MBE法によるGaN:Eu LEDの発光特性2012
- Author(s)
  大谷龍輝, 松村亮太, 関口寛人, 高木康文, 岡田浩, 若原昭浩
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-22560328
[Presentation] 希土類添加III族窒化物半導体を用いた三端子型発光デバイスの作製(4)2012
- Author(s)
  近藤正樹, 岡田浩, 関口寛人, 若原昭浩, 佐藤真一郎, 大島武
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京)
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-22560328
[Presentation] Mg共添加によるGaN:Euの発光特性向上のメカニズム2012
- Author(s)
  関口寛人, 大谷龍輝, 高木康文, 岡田浩, 若原昭浩
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-22560328
[Presentation] NH3-MBE 法による GaN:Eu LED の発光特性2012
- Author(s)
  大谷龍輝, 松村亮太,関口寛人,高木康文,岡田浩,若原昭浩
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-22560328
[Presentation] 希土類添加III 族窒化物半導体を用いた三端子型発光デバイスの作製(4)2012
- Author(s)
  近藤正樹, 岡田浩,関口寛人,若原昭浩,佐藤真一郎,大島武
- Organizer
  希土類添加III 族窒化物半導体を用いた三端子型発光デバイスの作製(4)
- Place of Presentation
  東京
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-22560328
[Presentation] Robust Hall effect magnetic field sensors for operation at high temperatures and in harsh radiation environments2012
- Author(s)
  H. Okada, S. Koide, S. Sato, T. Ohshima and A. Sandhu
- Organizer
  International Magnetics Conference, INTERMAG 2012
- Place of Presentation
  バンクーバー(カナダ)
- Year and Date
  2012-05-11
- Data Source
  KAKENHI-PROJECT-22560328
[Presentation] Development of Lattice- Matched GaPN/ AlGaPN DBR on Si2012
- Author(s)
  H. Okada, K. Kumagai, T. Kawai, H. Sekiguchi, and A. Wakahara
- Organizer
  IEEE Photonics Conference 2012
- Place of Presentation
  サンフランシスコ(米国)
- Year and Date
  2012-09-27
- Data Source
  KAKENHI-PROJECT-22560328
[Presentation] Effect of Nitrogen Source on Doping Properties of GaN:Eu Grown by MBE2011
- Author(s)
  T.Suwa, Y.Takagi, H.Sekiguchi, H.Okada, A.Wakahara
- Organizer
  rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Place of Presentation
  名古屋
- Year and Date
  2011-03-06
- Data Source
  KAKENHI-PROJECT-22560328
[Presentation] Eu selective doped light emitting transistor based-on AlGaN/GaN heterostructure2011
- Author(s)
  M. Kondo, T. Hata, H. Okada, A. Wakahara, S. Sato, and T. Oshima
- Organizer
  Asia-Pacific Interdisciplinary Research Conference 2011
- Place of Presentation
  豊橋
- Year and Date
  2011-11-18
- Data Source
  KAKENHI-PROJECT-22560328
[Presentation] Effects of Mg co-doping on Eu site in GaN by NH3-MBE2011
- Author(s)
  Hiroshi Okada, Takanobu Suwa, Yasufumi Takagi, Hiroto Sekiguchi, and Akihiro Wakahara
- Organizer
  International Conference on Nitride Semiconductors 2011
- Place of Presentation
  Glasgow (英国)
- Year and Date
  2011-07-11
- Data Source
  KAKENHI-PROJECT-22560328
[Presentation] Eu selective doped light emitting transistor based-on AlGaN/GaN hetero structure2011
- Author(s)
  M.Kondo, T.Hata, H.Okada, A.Wakahara, S.Sato, T.Oshima
- Organizer
  Asia-Pacific Interdisciplinary Research Conference 2011
- Place of Presentation
  豊橋技術科学大学(豊橋)
- Year and Date
  2011-11-18
- Data Source
  KAKENHI-PROJECT-22560328
[Presentation] Effect of Nitrogen Source on Doping Properties of GaN : Eu Grown by MBE2011
- Author(s)
  T.Suwa, Y.Takagi, H.Sekiguchi, H.Okada, A.Wakahara
- Organizer
  3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Place of Presentation
  名古屋工業大学
- Year and Date
  2011-03-06
- Data Source
  KAKENHI-PROJECT-22560328
[Presentation] Effects of Mg co-doping on Eu site in GaN by NH3-MBE2011
- Author(s)
  Hiroshi Okada, Takanobu Suwa, Yasufumi Takagi, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara
- Organizer
  International Conference on Nitride Semiconductors 2011
- Place of Presentation
  Glasgow(英国)
- Year and Date
  2011-07-11
- Data Source
  KAKENHI-PROJECT-22560328
[Presentation] AlGaN/GaN発光デバイスの希土類イオン注入条件についての検討2010
- Author(s)
  近藤正樹、秦貴幸、岡田浩、若原昭浩、古川雄三、佐藤真一郎、大島武
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会
- Place of Presentation
  浜松
- Year and Date
  2010-05-13
- Data Source
  KAKENHI-PROJECT-22560328
[Presentation] AlGaN/GaN発光デバイスの希土類イオン注入条件についての検討2010
- Author(s)
  岡田浩、秦貴幸、近藤正樹、若原昭浩、古川雄三、大島武‡佐藤真一郎
- Organizer
  第5回高崎量子応用研究シンポジウム
- Place of Presentation
  高崎シティギャラリー(高崎市高松町)
- Year and Date
  2010-10-14
- Data Source
  KAKENHI-PROJECT-22560328
[Presentation] AlGaN/GaN発光デバイスの希土類イオン注入条件についての検討2010
- Author(s)
  岡田浩、秦貴幸、近藤正樹、若原昭浩、古川雄三、大島武‡佐藤真一郎
- Organizer
  第5回高崎量子応用研究シンポジウム
- Place of Presentation
  高崎
- Year and Date
  2010-10-14
- Data Source
  KAKENHI-PROJECT-22560328
[Presentation] Eu添加AlGaN/GaN HEMT構造を用いた発光素子の検討2010
- Author(s)
  近藤正樹、秦貴幸、岡田浩、若原昭浩、古川雄三、佐藤真一郎、大島武
- Organizer
  電子通信学会シリコン材料・デバイス研究会
- Place of Presentation
  静岡大学(静岡県浜松市)
- Year and Date
  2010-05-13
- Data Source
  KAKENHI-PROJECT-22560328
[Presentation] Optical gain of Eu^<3+> ion implanted AIGaN and its Al compositional dependence2007
- Author(s)
  A. Wakahara, T. Shimojo, H. Kawai, H. Okada, T. Ohshima, S. Sato
- Organizer
  The 7th Int. Conf. on Nitride Semiconductors
- Place of Presentation
  Las Vegas, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360160
[Presentation] Optical Gain of Eu3+ Ion Implanted AIGaN and Its Al Compositional Dependence2007
- Author(s)
  A.Wakahara, T.Shimojo, H.Kawai, H.Okada, T.Ohshima, S.Sato
- Organizer
  The 7th international conference on nitride semiconductors
- Place of Presentation
  LasVegas,USA
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-17360160
[Presentation] Optical Gain of Eu^<3+> Ion Implanted AlGaN and Its Al Compositional Dependence2007
- Author(s)
  A. Wakahara, T. Shimojo, H. Kawai, H. Okada, T. Ohshima, S. Sato
- Organizer
  The 7th international conference on nitride semiconductors
- Place of Presentation
  Las Vegas, USA
- Year and Date
  2007-09-19
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360160
[Presentation] Development of Eu-doped AIGaN for Optoelectronic Integrated System -Optical Gain and Loss Measurement2007
- Author(s)
  A. Wakaham, H. Okada, J.-H. Park, K. Takemoto, T. Shimojyo, A. Yoshida
- Organizer
  The 8th Korea-Japan Joint Workshop on Advanced Semiconductor Processes and Equipments
- Place of Presentation
  Busan, Korea
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360160
[Presentation] Luminescence Properties of Tb-Implanted AI_xGai_<-x>N Epitaxial Layer2007
- Author(s)
  J.H. Park, Y. Furukawa, H. Okada, A. Wakahara
- Organizer
  The 8th Korea-Japan Joint Workshop on Advanced Semiconductor Processes and Equipments
- Place of Presentation
  Busan, Korea
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360160
[Presentation] Optical Properties of AIGaN doped with Rare-Earth Impurity for CMOS Compatible Optoelectronic Integration2006
- Author(s)
  A. Wakahara, H. Okada, J.-H. Park, F. Oikawa, A. Yoshida
- Organizer
  The 7th Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments
- Place of Presentation
  Nara, Japan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360160
[Presentation] Investigation of Tb-related green emission in group-Ill nitrides by time-resolved photoluminescence measurements2006
- Author(s)
  A. Wakahara, K. Takemoto, F. Oikawa, H. Okada, T. Ohshima, H. Itoh
- Organizer
  2nd Workshop on Impurity Based Electroluminescent Devices and Materials
- Place of Presentation
  Nanki-shirahama, Japan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360160
[Presentation] Optical investigation of Implantation Conditions on the luminescence Properties of Eu-doped Al_xGa_<-x>,N2006
- Author(s)
  J.-H. Park, H. Okada, A. Wakahara
- Organizer
  The 7th Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments
- Place of Presentation
  Nam, Japan
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360160
[Presentation] A novel structure of Si/GaN/SiIγ-Al_2O_3/Si for MEMS applications2006
- Author(s)
  S. Hatakenaka, A. Wakahara, H. Okada, M. Itoh, M. Ishida
- Organizer
  Asia-Pacific Conf. on Transducers and Micro-Nano Tech
- Place of Presentation
  Singapore
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360160
[Presentation] Energy transfer process in AIGaN : Tb by time-resolved photoluminescence analysis2006
- Author(s)
  A. Wakahara, K. Takemoto, F. Oikawa, H. Okada
- Organizer
  International Union MRS-ICA-2006
- Place of Presentation
  Jeju, Korea
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360160
[Presentation] Energy-back-transfer process in rare-earth doped AlGaN2005
- Author(s)
  A. Wakahara, T. Fujiwara, H. Okada, A. Yoshida, T. Ohshima H. Itho
- Organizer
  MRS Spring meeting
- Place of Presentation
  San Francisco, CA, USA
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360160
[Presentation] 表面波プラズマを用いたシリコン系絶縁膜の化学気相堆積と窒化物半導体デバイスへの応用
- Author(s)
  岡田浩，川上恭平，石丸貴博，篠原正俊，古川雅一，若原昭浩，関口寛人
- Organizer
  2014年第75回応用物理学秋季学術講演会
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25420330
[Presentation] 表面波プラズマを用いたシリコン窒化膜の化学気相堆積とデバイス応用
- Author(s)
  川上恭平、石丸貴博、篠原正俊、岡田浩、古川雅一、若原昭浩、関口寛人
- Organizer
  電子情報通信学会シリコン材料・デバイス研究会(ED、CPM、SDM研究会）
- Place of Presentation
  名古屋大学VBL（愛知県名古屋市）
- Year and Date
  2014-05-28 – 2014-05-29
- Data Source
  KAKENHI-PROJECT-25420330
[Presentation] Chemical Vapor Deposition of Silicon Nitride Films Enhanced by Surface-Wave Plasma for GaN Devices
- Author(s)
  H. Okada, K. Kawakami, T. Shinohara, T. Ishimaru, H. Sekiguchi, A. Wakahara, and M. Furukawa
- Organizer
  The Irago Conference 2014
- Place of Presentation
  産業技術総合研究所（茨城県つくば市）
- Year and Date
  2014-11-06 – 2014-11-07
- Data Source
  KAKENHI-PROJECT-25420330
[Presentation] Si / SiO2 / GaN系LED基板上への微小LEDの作製
- Author(s)
  土山和晃、宇都宮脩、山根啓補、関口寛人、岡田浩、若原昭浩
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス（神奈川県平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25420330
[Presentation] Robust Hall effect magnetic field sensors for operation at high temperatures and in harsh radiation environments
- Author(s)
  H. Okada
- Organizer
  International Magnetics Conference, INTERMAG 2012
- Place of Presentation
  Vancouver Convention Centre、バンクーバー、カナダ
- Data Source
  KAKENHI-PROJECT-22560328
[Presentation] Effect of GaN-based micro-LED size on optical characteristics （窒化ガリウム系微小発光ダイオードの発光特性における素子サイズ効果）
- Author(s)
  K.Tsuchiyama, H.Tahara, H.Sekiguchi, H. Okada and A. Wakahara
- Organizer
  第32回電子材料シンポジウム(EMS-33)
- Place of Presentation
  ラフォーレ修善寺（神奈川県伊豆市）
- Year and Date
  2014-07-11 – 2014-07-14
- Data Source
  KAKENHI-PROJECT-25420330
[Presentation] Solar-Blind Ultraviolet Detector Based on Al0.49Ga0.51N/AlN Back-Illuminated Schottky Barrier Diode
- Author(s)
  Ousmane Barry, Hiroto Sekiguchi, Keisuke Yamane, Hiroshi Okada, Akihiro Wakahara, Hideto Miyake, Masakazu Hiramatsu
- Organizer
  ISPlasma 2015 / IC-PLANTS2015
- Place of Presentation
  名古屋大学（愛知県名古屋市）
- Year and Date
  2015-03-26 – 2015-03-31
- Data Source
  KAKENHI-PROJECT-25420330
[Presentation] GaNテンプレート基板とSi基板の常温ウェハ接合
- Author(s)
  土山和晃，田原浩行，山根啓補，関口寛人，岡田浩，若原昭浩
- Organizer
  2014年第75回応用物理学秋季学術講演会
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25420330
[Presentation] Development of Lattice-Matched GaPN/AlGaPN DBR on Si
- Author(s)
  H. Okada
- Organizer
  IEEE Photonics Conference 2012
- Place of Presentation
  Hyatt Regency San Francisco Airport、サンフランシスコ、米国
- Data Source
  KAKENHI-PROJECT-22560328
[Presentation] イオン注入法によりEuを添加したAlGaN/GaN系三端子型発光デバイスの検討
- Author(s)
  岡田浩
- Organizer
  第7回高崎量子応用研究シンポジウム
- Place of Presentation
  高崎シティーギャラリー、高崎
- Data Source
  KAKENHI-PROJECT-22560328

1. WAKAHARA Akihiro (00230912)

# of Collaborated Projects: 3 results

# of Collaborated Products: 43 results
2. Mashimo Tomoaki (20600654)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. 吉田明 (20023145)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. 今枝健一 (60314085)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. 橋詰保 (80149898)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Okada Hiroshi 岡田 浩

OKADA Hiroshi 岡田 浩

岡田 浩 オカダ ヒロシ

Research Projects

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Co-Researchers

集積回路技術を適用した窒化物半導体ヘテロ構造のモノリシック集積回路Principal Investigator

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Investigation of process technology for nitride semiconductor based integrated circuits for harsh environment electronicsPrincipal Investigator

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Study on Capsule Endoscopic Robot Technologies inside Gastrointestinal Tract

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GaN-based integrated electronics operable in harsh environmentPrincipal Investigator

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Wafer level integration of nitride semiconductor device and Si CMOS integrated circuit for sensor applicationPrincipal Investigator

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Rare-earth doped gallium nitride semiconductor light emitting device and their applicationPrincipal Investigator

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Development of Optoelectronic Integrated Devices based on BIN-RE alloy semiconductor and Si

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カーボンナノチューブを用いた電子デバイスの電極構造の評価と量子デバイスへの応用Principal Investigator

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カーボンナノチューブの電界効果およびトランジスタへの応用

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[Journal Article] Electrical and X-ray Photoelectron Spectroscopy Studies of Ti/Al/Ti/Au Ohmic Contacts to AlGaN/GaN2024

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[Journal Article] AlGaN/GaN 高電子移動度トランジスタの集積化に向けた 素子分離技術の検討2023

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[Journal Article] AlGaN/GaNヘテ ロ構造の TiAl 系オーミック電極の基礎的検討2022

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[Journal Article] Photoluminescence properties of implanted Praseodymium into Gallium Nitride at elevated temperatures2020

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[Journal Article] GaN‐Based Monolithic Inverter Consisting of Enhancement‐ and Depletion‐Mode MOSFETs by Si Ion Implantation2019

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Okada Hiroshi 岡田浩

OKADA Hiroshi 岡田浩

岡田浩オカダヒロシ

[Journal Article] AlGaN/GaN 高電子移動度トランジスタの集積化に向けた素子分離技術の検討2023

[Journal Article] AlGaN/GaNヘテロ構造の TiAl 系オーミック電極の基礎的検討2022

[Journal Article] 窒化物半導体集積回路プロセスの検討～ Siイオン注入による閾値制御の試み～2019