ARIMOTO Keisuke 有元圭介

Researcher Number	30345699
Other IDs
Affiliation (Current)	2025: 山梨大学, 大学院総合研究部, 教授
Affiliation (based on the past Project Information) *help	2017 – 2024: 山梨大学, 大学院総合研究部, 准教授 2023: 山梨大学, 大学院総合研究部, 教授 2016: 山梨大学, 医学工学総合研究部, 准教授 2014 – 2016: 山梨大学, 総合研究部, 准教授 2011 – 2013: 山梨大学, 医学工学総合研究部, 准教授 … More 2011 – 2012: 山梨大学, 大学院・医学工学総合研究部, 准教授 2007 – 2010: 山梨大学, 大学院・医学工学総合研究部, 助教 2006: 山梨大学, 大学院医学光学総合研究部, 助手 Less
Review Section/Research Field	Principal Investigator Basic Section 30010:Crystal engineering-related / Basic Section 21050:Electric and electronic materials-related / Crystal engineering / Inorganic materials/Physical properties / Applied materials science/Crystal engineering Except Principal Investigator Basic Section 30010:Crystal engineering-related / Basic Section 36010:Inorganic compounds and inorganic materials chemistry-related / Basic Section 21050:Electric and electronic materials-related / Crystal engineering / Applied materials science/Crystal engineering / Thin film/Surface and interfacial physical properties / Physical chemistry
Keywords	Principal Investigator 歪みシリコン / 結晶欠陥 / MOSFET / 高移動度トランジスター / シリコンゲルマニウム / ヘテロ構造 / シリコン・ゲルマニウム / 集積回路 / 高移動度トランジスタ / 界面準位 … More / キャリア移動度 / 電子デバイス / 半導体結晶 / 結晶構造・組織制御 / シリコン・カーボン混晶 / 半導体物性 / 結晶成長 / 結晶工学 … More Except Principal Investigator 欠陥密度 / 低速電子 / 水素原子 / 極低温 / STEMモアレ / Ni-Al-Ti合金 / SiGe / ナノビーム電子回折 / 透過電子顕微鏡 / 真空蒸着 / キャリア制御 / TFT / SnS / タングステン / 金属不純物ドープ / 金属援用終端法 / 転位 / ダイヤモンド / 半導体物性 / 一軸歪み / 歪みゲルマニウム / 歪み制御 / 結晶工学 / 結晶欠陥 / 一軸性歪み / イオン注入 / 結晶歪み / ゲルマニウム / 分子線エピタキシー / ヘテロ構造 / 歪みシリコン / 低温 / トンネル現象 / DLC / トンネル / アモルファス / メタン / トネンル / 薄膜 / 電子衝撃 / 非晶質 / カーボン / 微結晶シリコン / 太陽電池 / ナノ材料 / 界面準位密度 / シリコン窒化膜 / アモルファスカーボン / 水素化アモルファスシリコン / 電子銃 / 飛行時間型質量分析計 / 放射線化学 / アモルファスシリコン / 電子線誘起反応 / トンネル反応 Less

構造敏感性をもつ半導体薄膜の歪分布マルチスケール可視化新手法の開発
- Principal Investigator
  
  山中淳二
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  University of Yamanashi
SnSの欠陥化学の探究と薄膜トランジスタへの展開
- Principal Investigator
  
  柳博
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 36010:Inorganic compounds and inorganic materials chemistry-related
- Research Institution
  University of Yamanashi
Investigation on the interface states at strained Si/SiO2 interfaces formed on Si(110) substratesPrincipal Investigator
- Principal Investigator
  
  Arimoto Keisuke
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  University of Yamanashi
Interaction between transition metal impurities and dislocations in diamond crystals
- Principal Investigator
  
  花田賢志
- Project Period (FY)
  2020 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  公益財団法人科学技術交流財団(あいちシンクロトロン光センター、知の拠点重点研究プロジェクト統括部)
Control of defects and surface morphology on strained Si/SiGe/Si(110) structure using the ion implantation methodPrincipal Investigator
- Principal Investigator
  
  ARIMOTO Keisuke
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  University of Yamanashi
Development of high-mobility strained Si/SiGe/Si(110) heterostructure by suppression of dislocation generationPrincipal Investigator
- Principal Investigator
  
  ARIMOTO Keisuke
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Crystal engineering
- Research Institution
  University of Yamanashi
Developments of high mobility uniaxially strained Germanium channel devices
- Principal Investigator
  
  Sawano Kentarou
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Crystal engineering
- Research Institution
  Tokyo City University
Control of crystalline defect generation processes for realization of high-hole-mobility strained Si thin films and its application to electronic devicesPrincipal Investigator
- Principal Investigator
  
  ARIMOTO Keisuke
- Project Period (FY)
  2013 – 2014
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Inorganic materials/Physical properties
- Research Institution
  University of Yamanashi
Realization of compressively strained silicon by defect control using ion implantation and application to high hole mobilty devices
- Principal Investigator
  
  Usami Noritaka
- Project Period (FY)
  2012 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Nagoya University
  Tohoku University
Studies on defect formation process and electrical properties of Silicon-Carbon strained heterostructuresPrincipal Investigator
- Principal Investigator
  
  ARIMOTO Keisuke
- Project Period (FY)
  2011 – 2012
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  University of Yamanashi
Study on the formation of carbon thin films obtained by electron-beam-induced-chemical vapor deposition combined with ultra low-temperature tunneling reaction of H atoms at ultra low temperature
- Principal Investigator
  
  SATO Tetsuya
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  University of Yamanashi
Study on the formation of hydrogenated silicon films and silicon nano-structural materials obtained by electron-beam-induced-chemical vapor deposition at ultra low temperature
- Principal Investigator
  
  SATO Tetsuya
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Physical chemistry
- Research Institution
  University of Yamanashi

[Journal Article] Evaluation of Lattice Spacing of Precipitates and Matrix in a Ni-Al-Ti alloy by NBD and Image Analysis using Two Condenser-Lens TEM2024
- Author(s)
  Joji Furuya, Junji Yamanaka, Keisuke Arimoto, Kosuke O. Hara, Minoru Doi
- Journal Title
  
  Microscopy and Microanalysis
  
  Volume: -
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K04599
[Journal Article] Crystallographic Orientations of Cracks Formed in SiGe/Ge/Si(111)2024
- Author(s)
  Kota Tajima, Junji Yamanaka, Keisuke Arimoto, Kosuke O. Hara, Youya Wagatsuma, Kentarou Sawano
- Journal Title
  
  Microscopy and Microanalysis
  
  Volume: -
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K04599
[Journal Article] Crystalline Morphology of SiGe Films Grown on Si(110) Substrates2023
- Author(s)
  Keisuke Arimoto, Chihiro Sakata, Kosuke O. Hara, Junji Yamanaka
- Journal Title
  
  Journal of Electronic Materials
  
  Volume: 52 Issue: 8 Pages: 5121-5121
- DOI
  10.1007/s11664-023-10425-7
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K04900
[Journal Article] Evaluation of Lattice-Spacing of SiGe/Si by NBD using Two Condenser-lens TEM, Experimental Study about the Effect of Convergence Angle2023
- Author(s)
  Yamanaka Junji、Furuya Joji、Hara Kosuke O、Arimoto Keisuke
- Journal Title
  
  Microscopy and Microanalysis
  
  Volume: 29 Issue: Supplement_1 Pages: 325-327
- DOI
  10.1093/micmic/ozad067.152
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K04599
[Journal Article] Influences of lattice strain and SiGe buffer layer thickness on electrical characteristics of strained Si/SiGe/Si(110) heterostructures2023
- Author(s)
  Fujisawa Taisuke、Onogawa Atsushi、Horiuchi Miki、Sano Yuichi、Sakata Chihiro、Yamanaka Junji、Hara Kosuke O.、Sawano Kentarou、Nakagawa Kiyokazu、Arimoto Keisuke
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 161 Pages: 107476-107476
- DOI
  10.1016/j.mssp.2023.107476
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04900
[Journal Article] Evaluation of Lattice-Spacing of SiGe/Si by NBD using Two-condenser-lens TEM2022
- Author(s)
  Yamanaka Junji、Oguni Takuya、Sano Yuichi、Ohshima Yusuke、Onogawa Atsushi、Hara Kosuke O、Arimoto Keisuke
- Journal Title
  
  Microscopy and Microanalysis
  
  Volume: 28 Issue: S1 Pages: 2812-2813
- DOI
  10.1017/s1431927622010601
- Data Source
  KAKENHI-PROJECT-21K04900
[Journal Article] Discrimination between Coherent and Incoherent Interfaces using STEM Moire2021
- Author(s)
  Junji Yamanaka, Daisuke Izumi, Chiaya Yamamoto, Mai Shirakura, Kosuke Hara, Keisuke Arimoto
- Journal Title
  
  Microscopy and Microanalysis
  
  Volume: 27 Issue: S1 Pages: 2326-2327
- DOI
  10.1017/s1431927621008369
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04900
[Journal Article] Strain relaxation process and evolution of crystalline morphologies during the growths of SiGe on Si(110) by solid-source molecular beam epitaxy2020
- Author(s)
  Shingo Saito, Yuichi Sano, Takane Yamada, Kosuke O. Hara, Junji Yamanaka, Kiyokazu Nakagawa, Keisuke Arimoto
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 113 Pages: 105042-105042
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04229
[Journal Article] Hole mobility enhancement observed in (110)-oriented strained Si2020
- Author(s)
  Keisuke Arimoto, Naoto Utsuyama, Shohei Mitsui, Kei Satoh, Takane Yamada, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 59
- NAID
  210000157909
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04229
[Journal Article] Engineering Strain, Defects, and Electronic Properties of (110)-Oriented Strained Si2020
- Author(s)
  K. Arimoto, J. Yamanaka, K. O. Hara, K. Sawano, N. Usami and K. Nakagawa
- Journal Title
  
  ECS Transactions
  
  Volume: 98 (5) Pages: 277-290
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04229
[Journal Article] Hole mobility in Strained Si/Relaxed SiGe/Si(110) hetero structures studied by gated Hall measurements2020
- Author(s)
  Daichi Namiuchi, Atsushi Onogawa, Taisuke Fujisawa, Yuichi Sano, Daisuke Izumi, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa, Keisuke Arimoto
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 113 Pages: 105052-105052
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04229
[Journal Article] HREM Observation and Identification of the Causality of Twins in SiGe/Si (110)2020
- Author(s)
  Junji Yamanaka, Yuichi Sano, Shingo Saito, Atsushi Onogawa, Kosuke Hara, Kiyokazu Nakagawa, Keisuke Arimoto
- Journal Title
  
  Microsc. Microanal.
  
  Volume: 26 (Suppl 2) Pages: 286-286
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04229
[Journal Article] Relaxation of strain in Si layers formed on (110)-oriented SiGe/Si heterostructures2019
- Author(s)
  Keisuke Arimoto, Atsushi Onogawa, Shingo Saito, Yuichi Sano, Daisuke Izumi, Junji Yamanaka, Kosuke O. Hara, Kiyokazu Nakagawa
- Journal Title
  
  ECS Transactions
  
  Volume: 93 Issue: 1 Pages: 79-80
- DOI
  10.1149/09301.0079ecst
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04229
[Journal Article] Evaluation of Crystal Lattice Rotation around a Stress-Induced Twin in a Step-Graded SiGe / Si(110) Using STEM Moiré Observation and its Image Analysis2019
- Author(s)
  Junji Yamanaka, Chiaya Yamamoto, Mai Shirakura, Kosuke O. Hara, Keisuke Arimoto, Kiyokazu Nakagawa, Akimitsu Ishizuka, and Kazuo Ishizuka
- Journal Title
  
  Microscopy and Microanalysis
  
  Volume: 25 Issue: S2 Pages: 242-243
- DOI
  10.1017/s1431927619001946
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04229
[Journal Article] Stability of strain in Si layers formed on SiGe/Si(110) heterostructures2018
- Author(s)
  Arimoto Keisuke、Onogawa Atsushi、Saito Shingo、Yamada Takane、Sato Kei、Utsuyama Naoto、Sano Yuichi、Izumi Daisuke、Yamanaka Junji、Hara Kosuke O、Sawano Kentarou、Nakagawa Kiyokazu
- Journal Title
  
  Semiconductor Science and Technology
  
  Volume: 33 Issue: 12 Pages: 124016-124016
- DOI
  10.1088/1361-6641/aaeb10
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04229
[Journal Article] Surface Roughness of SiGe/Si(110) Formed by Stress-Induced Twins and the Solution to Produce Smooth Surface2018
- Author(s)
  Junji Yamanaka, Mai Shirakura, Chiaya Yamamoto, Naoto Utsuyama, Kei Sato, Takane Yamada, Kosuke O. Hara, Keisuke Arimoto, Kiyokazu Nakagawa
- Journal Title
  
  Journal of Materials Science and Chemical Engineering
  
  Volume: 6 Issue: 01 Pages: 25-31
- DOI
  10.4236/msce.2018.61004
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-15K04661
[Journal Article] STEM Moire Observation of Lattice-Relaxed Germanium Grown on Silicon2017
- Author(s)
  Junji Yamanaka, Chiaya Yamamoto, Hiroki Nakaie, Tetsuji Arai, Keisuke Arimoto, Kosuke O. Hara, Kiyokazu Nakagawa
- Journal Title
  
  Journal of Materials Science and Chemical Engineering
  
  Volume: 5 Issue: 01 Pages: 102-108
- DOI
  10.4236/msce.2017.51014
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-15K04661
[Journal Article] Thermal stability of compressively strained Si/relaxed Si1-xCx heterostructures formed on Ar ion implanted Si (100) substrates2017
- Author(s)
  You Arisawa, Yusuke Hoshi, Kentarou Sawano, Junji Yamanaka, Keisuke Arimoto, Chiaya Yamamoto, Noritaka Usami
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 印刷中 Pages: 127-132
- DOI
  10.1016/j.mssp.2016.11.024
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26286044
[Journal Article] Growth of strained Si/relaxed SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy2017
- Author(s)
  Keisuke Arimoto, Hiroki Nakazawa, Shohei Mitsui, Naoto Utsuyama, Junji Yamanaka, Kosuke O. Hara, Noritaka Usami, Kiyokazu Nakagawa
- Journal Title
  
  Semiconductor Science and Technology
  
  Volume: 32 Issue: 11 Pages: 114002-114002
- DOI
  10.1088/1361-6641/aa8a87
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K04661
[Journal Article] Reduction of Dislocation Densities of Ge Layers Grown on Si Substrates by Using Microwave Plasma Heating and Fabrication of High Hole Mobility MOSFETs on Ge Layers2017
- Author(s)
  Hiroki Nakaie, Tetsuji Arai, Chiaya Yamamoto, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Toshiyuki Takamatsu
- Journal Title
  
  Journal of Materials Science and Chemical Engineering
  
  Volume: 5 Issue: 01 Pages: 42-47
- DOI
  10.4236/msce.2017.51006
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-15K04661
[Journal Article] TEM Observation of Si0.99C0.01 Thin Films with Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation Followed by Rapid Thermal Annealing2017
- Author(s)
  Junji Yamanaka, Shigenori Inoue, Keisuke Arimoto, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Atsushi Moriya, Yasuhiro Inokuchi, Yasuo Kunii
- Journal Title
  
  Journal of Materials Science and Chemical Engineering
  
  Volume: 5 Issue: 01 Pages: 15-25
- DOI
  10.4236/msce.2017.51003
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26286044
[Journal Article] Fabrication of high-quality strain relaxed SiGe(110) films by controlling defects via ion implantation2017
- Author(s)
  M. Kato, K. Arimoto, J. Yamanaka, K. Nakagawa, K. Sawano
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 477 Pages: 197-200
- DOI
  10.1016/j.jcrysgro.2017.05.022
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-15K04661
[Journal Article] 241Hole mobility in strained Si/SiGe/vicinal Si(110) grown by gas source MBE2017
- Author(s)
  K. Arimoto, S. Yagi, J. Yamanaka, K. O. Hara, K. Sawano, N. Usami, K. Nakagawa
- Journal Title
  
  Journal of Crystal Growt
  
  Volume: 印刷中 Pages: 625-629
- DOI
  10.1016/j.jcrysgro.2016.12.076
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K04661
[Journal Article] Anisotropic Strain Introduction into Si/Ge Hetero Structures2016
- Author(s)
  Kentarou Sawano, Shiori Konoshima, Junji Yamanaka, Keisuke Arimoto, and Kiyokazu Nakagawa
- Journal Title
  
  ECS transaction
  
  Volume: 75 Issue: 8 Pages: 563-569
- DOI
  10.1149/07508.0563ecst
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26286044
[Journal Article] Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator2015
- Author(s)
  K. Sawano, Y. Hoshi, S. Kubo, K. Arimoto, J. Yamanaka, K. Nakagawa, K. Hamaya, M. Miyao, Y. Shiraki
- Journal Title
  
  Thin Solid Films
  
  Volume: 未定 Pages: 24-28
- DOI
  10.1016/j.tsf.2015.11.020
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25600079, KAKENHI-PROJECT-26286044
[Journal Article] Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer2014
- Author(s)
  K. Sawano, Y. Hoshi, S. Endo, T. Nagashima, K. Arimoto, J. Yamanaka, K. Nakagawa, S. Yamada, K. Hamaya, M. Miyao and Y. Shiraki
- Journal Title
  
  Thin Solid Films
  
  Volume: 557 Pages: 76-79
- DOI
  10.1016/j.tsf.2013.10.074
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25600079, KAKENHI-PROJECT-26286044
[Journal Article] Formation of compressively strained Si/Si1-xCx/Si(100) heterostructures using gas-source molecular beam epitaxy2013
- Author(s)
  K. Arimoto, H. Furukawa, J. Yamanaka, C. Yamamoto, K. Nakagawa, N. Uasmi, K. Sawano, Y. Shiraki, J. Cryst
- Journal Title
  
  Growth
  
  Volume: 362 Pages: 276-281
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760011
[Journal Article] Gas-source MBE growth of strain-relaxed Si_1-x C_x on Si(100) substrates2013
- Author(s)
  K. Arimoto, S. Sakai, H.Furukawa, J. Yamanaka, K. Nakagawa, N.Usami, Y. Hoshi, K. Sawano, Y. Shiraki, J. Cryst
- Journal Title
  
  Growth
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760011
[Journal Article] Gas-source MBE growth of strain-relaxed Si1-xCx on Si(100) substrates2013
- Author(s)
  Keisuke Arimoto, Shoichiro Sakai, Hiroshi Furukawa, Junji Yamanaka, Kiyokazu Nakagawa, Noritaka Usami, Yusuke Hoshi, Kentarou Sawano, Yasuhiro Shiraki
- Journal Title
  
  J. Cryst. Growth
  
  Volume: 378 Pages: 212-217
- DOI
  10.1016/j.jcrysgro.2012.12.152
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360001, KAKENHI-PROJECT-25600079
[Journal Article] Reflectance anisotropies of compressively strained Si grown on vicinal Si_1-x C_x (001)2013
- Author(s)
  R. E. Balderas-Navarro, N. A. Ulloa-Castillo, K. Arimoto, G. Ramierz-Melendez, L. F. Lastras-Martinez, H. Furukawa, J. Yamanaka, A. Lastras-Martinez, J. M. Flores-Camacho, N. Usami, D. Stifter, K. Hingerl
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: 102 Pages: 11902-11902
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760011
[Journal Article] Formation of compressively strained Si/Si1-xCx/Si(100) heterostructures using gas-source molecular beam epitaxy2013
- Author(s)
  Keisuke Arimoto
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 362 Pages: 276-281
- DOI
  10.1016/j.jcrysgro.2011.12.084
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23760011, KAKENHI-PROJECT-24360001, KAKENHI-PROJECT-25600079
[Presentation] Crystallographic Orientations of Cracks Formed in SiGe/Ge/Si(111)2024
- Author(s)
  Kota Tajima, Junji Yamanaka, Keisuke Arimoto, Kosuke O. Hara, Youya Wagatsuma, Kentarou Sawano
- Organizer
  Microscopy and Microanalysis 2024
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K04599
[Presentation] (110)-surface strained-channel MOSFETs2024
- Author(s)
  Keisuke Arimoto
- Organizer
  ECS PRiME2024
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04900
[Presentation] Evaluation of Lattice Spacing of Precipitates and Matrix in a Ni-Al-Ti alloy by NBD and Image Analysis using Two Condenser-Lens TEM2024
- Author(s)
  Joji Furuya, Junji Yamanaka, Keisuke Arimoto, Kosuke O. Hara and Minoru Doi
- Organizer
  Microscopy and Microanalysis 2024
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K04599
[Presentation] NBD回折円盤を用いた面間隔評価方法の改良とNi-Al-Tiへの応用2024
- Author(s)
  古屋丞司,山中淳二,有元圭介,原康祐,土井稔
- Organizer
  日本顕微鏡学会第80回学術講演会
- Data Source
  KAKENHI-PROJECT-23K04599
[Presentation] 真空蒸着SnS薄膜を用いたpチャネル薄膜トランジスタの試作2023
- Author(s)
  米倉樹、武井海人、福井慧賀、有元圭介、柳博
- Organizer
  第61回セラミックス基礎科学討論会
- Data Source
  KAKENHI-PROJECT-23K23431
[Presentation] Surface Morphology of SnS Polycrystallin2023
- Author(s)
  Kaito Takei, Tatsuki Yonekura, Keiga Fukui, Kaori Omata, Keisuke Arimoto, Hiroshi Yanagi
- Organizer
  MRM 2023 & TCM-TOEO 2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23431
[Presentation] NBD回折円盤を用いたNi-Al-Ti合金中の析出物と母相の面間隔評価2023
- Author(s)
  古屋丞司、山中淳二、有元圭介、原康祐、土井稔
- Organizer
  日本金属学会2023年秋期講演(第173回)大会
- Data Source
  KAKENHI-PROJECT-23K04599
[Presentation] 歪みSi/SiGe/Si(110)MOS構造の界面準位密度の評価2023
- Author(s)
  青沼雄基、藤澤泰輔、堀内未希、吉川満希、山中淳二、原康祐、中川清和、有元圭介
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04900
[Presentation] 歪み Si/SiGe/Si(110)ヘテロ構造への in-situ Sb ドーピングプロセスの検討2023
- Author(s)
  河村剛登、原康祐、山中淳二、中川清和、有元圭介
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04900
[Presentation] Evaluation of Lattice-Spacing of SiGe/Si by NBD using Two Condenser-lens TEM, Experimental Study about the Effect of Convergence Angle2023
- Author(s)
  Yamanaka Junji、Furuya Joji、Hara Kosuke O、Arimoto Keisuke
- Organizer
  Microscopy and Microanalysis 2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K04599
[Presentation] Feasibility study for the evaluation of SiGe/Si (110) domain tilt using X-raydiffraction reciprocal space mapping and conventional HR-TEM method2023
- Author(s)
  i Yamanaka, Chihiro Sakata, Kosuke Hara, Keisuke Arimoto
- Organizer
  IMC20 - The 20th International Microscopy Congress
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K04599
[Presentation] 2段集束レンズTEMを用いたNBDによるSiGeと歪Siの面間隔評価2022
- Author(s)
  山中淳二,小國琢弥,佐野雄一,大島佑介,各川敦史,原康祐,有元圭介
- Organizer
  日本顕微鏡学会第78回学術講演会
- Data Source
  KAKENHI-PROJECT-21K04900
[Presentation] NBD 回折円盤からの SiGe 面間隔測定における収束レンズ条件の影響2022
- Author(s)
  古屋丞司, 有元圭介, 小國琢弥, 原康祐, 山中淳二
- Organizer
  日本顕微鏡学会第 65 回シンポジウム
- Data Source
  KAKENHI-PROJECT-21K04900
[Presentation] Evaluation of Lattice-Spacing of Si and SiGe by NBD using conventional TEM2022
- Author(s)
  Junji Yamanaka, Takuya Oguni, Joji Furuya, Kosuke O. Hara, Keisuke Arimoto
- Organizer
  19th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04900
[Presentation] Crystalline Morphology of SiGe Films Grown on Si(110) Substrates2022
- Author(s)
  Chihiro Sakata, Keisuke Arimoto, Kosuke O Hara, Junji Yamanaka
- Organizer
  19th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04900
[Presentation] 歪みSi/緩和 SiGe/Si(110)ヘテロ構造p-MOSFETの高正孔移動度化とリーク電流の低減2022
- Author(s)
  藤澤泰輔、各川敦史、堀内未希、坂田千尋、山中淳二、原康祐、澤野憲太郎、中川清和、有元圭介
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04900
[Presentation] Strain Engineering for Enhancement of Hole Mobility in Silicon2022
- Author(s)
  Keisuke Arimoto
- Organizer
  9th International Symposium on Control of Semiconductor Interfaces
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04900
[Presentation] Si(110)基板上への組成傾斜SiGe層形成法に関する研究2021
- Author(s)
  堀内未希、斎藤慎吾、原康介、山中淳二、有元圭介
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04229
[Presentation] 歪みSi/SiGe/Si(110)ヘテロ構造へのin situ Sbドーピングに関する研究2021
- Author(s)
  吉川満希、浪内大地、陳北辰、堀内未希、藤澤泰輔、山中淳二、原康祐、中川清和、有元圭介
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04229
[Presentation] 2段集束レンズ TEM を用いた NBD による SiGe 面間隔評価の試行2021
- Author(s)
  小國琢弥、佐野雄一、大島佑介、原康祐、有元圭介、山中淳二
- Organizer
  日本顕微鏡学会第64回シンポジウム
- Data Source
  KAKENHI-PROJECT-21K04900
[Presentation] 2段集束レンズTEMを用いたNBDによるSi面間隔評価の試行2021
- Author(s)
  小國琢弥，佐野雄一，原康祐，有元圭介，山中淳二
- Organizer
  日本顕微鏡学会第77回学術講演会
- Data Source
  KAKENHI-PROJECT-21K04900
[Presentation] Strain and Defect Engineering for the (110)-Oriented Si pMOSFETs2021
- Author(s)
  Keisuke Arimoto, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa
- Organizer
  International Conference on Materials Science and Engineering (Materials Oceania)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04900
[Presentation] Discrimination between Coherent and Incoherent Interfaces using STEM Moire2021
- Author(s)
  Junji Yamanaka, Daisuke Izumi, Chiaya Yamamoto Mai Shirakura, Kosuke O. Hara, Keisuke Arimoto
- Organizer
  Microscopy & Microanalysis 2021 Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04900
[Presentation] Si/SiGe/Si(110) 内双晶分布の X 線回折と TEM による評価2021
- Author(s)
  坂田千尋、有元圭介、各川敦史、原康祐、山中淳二
- Organizer
  日本顕微鏡学会第64回シンポジウム
- Data Source
  KAKENHI-PROJECT-21K04900
[Presentation] STEM-Moire Applications to Crystalline Specimens without using High-End Microscopes2021
- Author(s)
  Junji Yamanaka, Chiaya Yamamoto, Kosuke O. Hara, Keisuke Arimoto
- Organizer
  2nd Canada -Japan Microscopy Societies Symposium 2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04900
[Presentation] Dependences of the hole mobility in the strained Si pMOSFET formed on SiGe/Si(110) on strained Si thickness and the channel direction2021
- Author(s)
  Keisuke Arimoto, Taisuke Fujisawa, Daichi Namiuchi, Atsushi Onogawa, Yuichi Sano, Daisuke Izumi, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04229
[Presentation] Engineering Strain, Defects, and Electronic Properties of (110)-Oriented Strained Si2020
- Author(s)
  K. Arimoto, J. Yamanaka, K. O. Hara, K. Sawano, N. Usami and K. Nakagawa
- Organizer
  ECS PRiME 2020
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04229
[Presentation] HREM Observation and Identification of the Causality of Twins in SiGe/Si (110)2020
- Author(s)
  Junji Yamanaka, Yuichi Sano, Shingo Saito, Atsushi Onogawa, Kosuke Hara, Kiyokazu Nakagawa, Keisuke Arimoto
- Organizer
  Microscopy & Microanalysis 2020 Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04229
[Presentation] 歪みSi/緩和SiGe/Si(110)ヘテロ構造p-MOSFETにおける正孔移動度のチャネル方向依存性2020
- Author(s)
  藤澤泰輔、各川敦史、浪内大地、佐野雄一、泉大輔、山中淳二、原康祐、澤野憲太郎、中川清和、有元圭介
- Organizer
  第81回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04229
[Presentation] Evaluation of Crystal Lattice Rotation around a Stress-Induced Twin in a Step-Graded SiGe / Si(110) Using STEM Moiré Observation and its Image Analysis2019
- Author(s)
  Junji Yamanaka, Chiaya Yamamoto, Mai Shirakura, Kosuke O. Hara, Keisuke Arimoto, Kiyokazu Nakagawa, Akimitsu Ishizuka, and Kazuo Ishizuka
- Organizer
  Microscopy & Microanalysis 2019 Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04229
[Presentation] Hole Mobility Enhancement Observed in (110)-Oriented Strained Si2019
- Author(s)
  Keisuke Arimoto, Naoto Utsuyama, Shohei Mitsui, Kei Satoh, Takane Yamada, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Kiyokazu Nakagawa
- Organizer
  2019 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04229
[Presentation] 歪みSi/緩和SiGe/Si(110)ヘテロ構造p-MOSFETにおける電界効果移動度の歪みSi膜厚依存性2019
- Author(s)
  藤澤泰輔、各川敦史、浪内大地、斎藤慎吾、佐野雄一、泉大輔、山中淳二、原康祐、澤野憲太郎、中川清和、有元圭介
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04229
[Presentation] Relaxation of strain in Si layers formed on (110)-oriented SiGe/Si heterostructures2019
- Author(s)
  Keisuke Arimoto, Atsushi Onogawa, Shingo Saito, Yuichi Sano, Daisuke Izumi, Junji Yamanaka, Kosuke O. Hara, Kiyokazu Nakagawa
- Organizer
  2nd Joint ISTDM / ICSI 2019 Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04229
[Presentation] Hole Mobility in Strained Si/Relaxed SiGe/Si(110) Hetero Structures Studied by Gated Hall Measurements2019
- Author(s)
  Daichi Namiuchi, Atsushi Onogawa, Keisuke Arimoto, Yuichi Sano, Daisuke Izumi, Junji Yamanaka, Kosuke O Hara, Kentarou Sawano, Kiyokazu Nakagawa
- Organizer
  8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04229
[Presentation] Critical Thickness of SiGe on Si(110) Substrate2019
- Author(s)
  Shingo Saito, Yuichi Sano, Kosuke. O. Hara, Junji Yamanaka, Keisuke Arimoto, Kiyokazu Nakagawa
- Organizer
  8th International Symposium on Control of Semiconductor Interfaces (ISCSI-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04229
[Presentation] 歪みSi/緩和SiGe/Si(110)ヘテロ構造の反転キャリアのHall移動度評価2019
- Author(s)
  浪内大地、澤野憲太郎、各川敦史、佐野雄一、泉大輔、有元圭介、山中淳二、原康祐、中川清和
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04229
[Presentation] Si(110)基板上のSiGeの臨界膜厚に関する研究2019
- Author(s)
  斎藤慎吾、佐野雄一、有元圭介、山中淳二、原康祐、中川清和
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04229
[Presentation] Si(110)基板上に成長したSiGe混晶半導体の高分解能TEM観察2019
- Author(s)
  佐野雄一, 有元圭介, 斎藤慎吾, 各川敦史, 原康祐, 中川清和, 山中淳二
- Organizer
  日本顕微鏡学会第43回関東支部講演会
- Data Source
  KAKENHI-PROJECT-18K04229
[Presentation] (110)面歪みSi薄膜のラマン分光法による歪み評価2019
- Author(s)
  有元圭介、各川敦史、斎藤慎吾、原康祐、山中淳二、中川清和
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04229
[Presentation] 伸張歪みSi/緩和SiGe/Si(110)ヘテロ構造のゲート電圧印加Hall測定による移動度評価2018
- Author(s)
  浪内大地、佐藤圭、澤野憲太郎、有元圭介、山中淳二、原康祐、中川清和
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04229
[Presentation] Si(110)上に形成されたSiGeの格子歪みの熱的安定性2018
- Author(s)
  大島佑介、山田崇峰、有元圭介、山中淳二、原康祐、中川清和
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04229
[Presentation] SiGe/Si(110)構造の表面形状形成過程に関する研究2018
- Author(s)
  斎藤慎吾、佐野雄一、山田崇峰、原康祐、山中淳二、有元圭介、中川清和
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04229
[Presentation] Stability of strain in Si layers formed on SiGe/Si(110) heterostructures2018
- Author(s)
  Keisuke Arimoto, Takane Yamada, Kei Sato, Naoto Utsuyama, Atsushi Onogawa, Junji Yamanaka, Kosuke O. Hara, Kiyokazu Nakagawa
- Organizer
  Joint ISTDM/ICSI 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04229
[Presentation] STEM Moiré Observation of the Compositionally Step-Graded SiGe Thin Film and its Image Analysis2018
- Author(s)
  Junji Yamanaka, Chiaya Yamamoto, Mai Shirakura, Kei Sato, Takane Yamada, Kosuke O. Hara, Keisuke Arimoto, Kiyokazu Nakagawa, Akimitsu Ishizuka, and Kazuo Ishizuka
- Organizer
  19th International Microscopy Congress (IMC19)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04229
[Presentation] Feasibility Study to Evaluate Lattice-Space Changing of a Step-Graded SiGe / Si (110) Using STEM Moiré2018
- Author(s)
  Junji Yamanaka, Mai Shirakura, Chiaya Yamamoto, Kei Sato, Takane Yamada, Kosuke O. Hara, Keisuke Arimoto, Kiyokazu Nakagawa, Akimitsu Ishizuka, Kazuo Ishizuka
- Organizer
  The 3rd Int'l Conference on Metal Materials and Engineering (MME 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04229
[Presentation] (110)面歪みSi薄膜の臨界膜厚2018
- Author(s)
  有元圭介、各川敦史、山田祟峰、原康祐、山中淳二、中川清和
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-15K04661
[Presentation] 階段状組成傾斜SiGe/Si(110)のSTEM モアレ観察と面間隔評価2018
- Author(s)
  山中淳二、山本千綾、白倉麻依、佐藤圭、山田祟峰、原康祐、有元圭介、中川清和、石塚顕在、石塚和夫
- Organizer
  日本顕微鏡学会第74回学術講演会
- Data Source
  KAKENHI-PROJECT-18K04229
[Presentation] 高移動度トランジスタ実現に向けた４族半導体の歪みエンジニアリング2017
- Author(s)
  有元圭介
- Organizer
  第２回ニューフロンティアリサーチワークショップ
- Invited
- Data Source
  KAKENHI-PROJECT-15K04661
[Presentation] 二段階成長法を用いたSi(110)基板上Ge層の作製と評価2017
- Author(s)
  大木健司、有元圭介、山中淳二、中川清和、澤野憲太郎
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-15K04661
[Presentation] Reduction of Dislocation Densities of Ge Layers Grown on Si Substrates by Using Microwave, Plasma Heating and Fabrication of High Hole, Mobility MOSFETs on Ge Layers2017
- Author(s)
  Hiroki Nakaie, Tetsuji Arai, Chiaya Yamamoto, Keisuke Arimoto, Junji Yamanaka,Kiyokazu Nakagawa, Toshiyuki Takamatsu
- Organizer
  The 3rd Int’l Conference on Thin Film Technology and Applications
- Data Source
  KAKENHI-PROJECT-15K04661
[Presentation] Growth of Strained Silicon Film for High hole mobility Device2017
- Author(s)
  Keisuke Arimoto, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Noritaka Usami, Kiyokazu Nakagawa
- Organizer
  BIT’s 6th Annual World Congress of Advanced Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K04661
[Presentation] STEM Moiré Observations of Si/SiGe/Si (110)2017
- Author(s)
  Junji Yamanaka, Chiaya Yamamoto, Mai Shirakura, Kei Sato, Takane Yamada, Kosuke O. Hara, Keisuke Arimoto and Kiyokazu Nakagawa
- Organizer
  The 3rd East-Asia Microscopy Conference
- Data Source
  KAKENHI-PROJECT-15K04661
[Presentation] STEM Moiré Observation of Lattice-Relaxed Germanium Grown on Silicon2017
- Author(s)
  Junji Yamanaka, Chiaya Yamamoto, Hiroki Nakaie, Tetsuji Arai, Keisuke Arimoto, Kosuke O. Hara, Kiyokazu Nakagawa
- Organizer
  The 3rd Int’l Conference on Thin Film Technology and Applications
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K04661
[Presentation] 階段状組成傾斜SiGe/Si(110)のSTEMモアレ観察2017
- Author(s)
  山中淳二，山本千綾，白倉麻依，佐藤圭，山田崇峰，原康祐，有元圭介，中川清和
- Organizer
  第73回日本顕微鏡学会学術講演会
- Data Source
  KAKENHI-PROJECT-15K04661
[Presentation] Growth of strained Si/SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy2017
- Author(s)
  Keisuke Arimoto, Hiroki Nakazawa Shohei Mitsui, Naoto Utsuyama, Junji Yamanaka, Kosuke O. Hara, Noritaka Usami, Kiyokazu Nakagawa
- Organizer
  The 10th International Conference on Silicon Epitaxy and heterostructures
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K04661
[Presentation] Hole Mobility in Strained Si/SiGe/Vicinal Si(110) Grown by Gas Source MBE2016
- Author(s)
  K. Arimoto, S. Yagi, J. Yamanaka, K. Nakagawa, N. Usami, K. Sawano
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18)
- Place of Presentation
  Nagoya Congress Center (Aichi)
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286044
[Presentation] The Influence of Stress-Induced Twins upon Surface Morphology of SiGe/Si(110)2016
- Author(s)
  J. Yamanaka, M. Shirakura, C. Yamamoto, N. Utsuyama, K. Sato, T. Yamada, K. Arimoto, K. Nakagawa
- Organizer
  18th International Conference on Crystal Growth and Epitaxy
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K04661
[Presentation] Si(110)基板上SiGe膜の歪み緩和におけるイオン注入の効果2016
- Author(s)
  加藤まどか、村上太陽、有元圭介、山中淳二、中川清和、澤野憲太郎
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県新潟市）
- Data Source
  KAKENHI-PROJECT-15K04661
[Presentation] 伸張歪みSi/SiGe/Si(110)ヘテロ構造中のmicrotwinが表面モフォロジーに及ぼす影響2016
- Author(s)
  佐藤圭、宇津山直人、山田崇峰、有元圭介、山本千綾、山中淳二、原康祐、中川清和、宇佐美徳隆、澤野憲太郎
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-15K04661
[Presentation] 伸張歪みSi/緩和SiGe/Si(110)ヘテロ構造の結晶成長中における表面形状形成過程に関する研究2016
- Author(s)
  山田崇峰、宇津山直人、佐藤圭、白倉麻衣、山本千綾、有元圭介、山中淳二、原康祐、宇佐美徳隆、澤野憲太郎、中川清和
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県新潟市）
- Data Source
  KAKENHI-PROJECT-15K04661
[Presentation] Fabrication of high-quality strain relaxed SiGe(110) films by controlling defects via ion implantation2016
- Author(s)
  M. Kato, T. Murakami, K. Arimoto, J. Yamanaka, K. Nakagawa, K, Sawano
- Organizer
  19th International Conference on Molecular Beam Epitaxy (MBE 2016)
- Place of Presentation
  Montpellier, France
- Year and Date
  2016-09-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286044
[Presentation] Hole Mobility in Strained Si/SiGe/Vicinal Si(110) Grown by Gas Source MBE2016
- Author(s)
  K. Arimoto, S. Yagi, J. Yamanaka, K. Nakagawa, N. Usami and K. Sawano
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2016-08-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K04661
[Presentation] 伸張歪みSi/SiGe/Si(110)ヘテロ構造の表面モフォロジーに成長速度が及ぼす影響2016
- Author(s)
  佐藤圭、宇津山直人、山田崇峰、有元圭介、山中淳二、原康祐、澤野憲太朗、宇佐美徳隆、中川清和
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ（新潟県新潟市）
- Data Source
  KAKENHI-PROJECT-15K04661
[Presentation] Thermal stability of compressively strained Si/relaxed Si1-xCx heterostructures formed on Ar ion implanted Si (100) substrates2016
- Author(s)
  You Arisawa, Yusuke Hoshi, Kentarou Sawano, Junji Yamanaka, Keisuke Arimoto, Chiaya Yamamoto, Noritaka Usami
- Organizer
  8th International Conference on Si Epitaxy and Heterostructures
- Place of Presentation
  Nagoya University
- Year and Date
  2016-06-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24360001
[Presentation] 微傾斜基板を用いた伸張歪みSi/緩和SiGe/Si(110)ヘテロ構造のモフォロジー及び素子特性2016
- Author(s)
  宇津山直人、佐藤圭、山田崇峰、有元圭介、山中淳二、中川清和、原康祐、宇佐美徳隆、澤野憲太郎
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2016-03-21
- Data Source
  KAKENHI-PROJECT-15K04661
[Presentation] 微傾斜基板を用いた伸張歪みSi/緩和SiGe/Si(110)ヘテロ構造のモフォロジー及び素子特性2016
- Author(s)
  宇津山直人、佐藤圭、山田崇峰、有元圭介、山中淳二、中川清和、原康介、宇佐美徳隆、澤野憲太郎
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-24360001
[Presentation] Thermal Stability of Compressively Strained Si/Relaxed Si1-xCx Heterostructures Formed on Ar Ion Implanted Si (100) Substrates2016
- Author(s)
  You Arisawa, Yusuke Hoshi, Kentarou Sawano, Junji Yamanaka, Keisuke Arimoto, Chiaya Yamamoto, Noritaka Usami
- Organizer
  International SiGe Technology and Device Meeting 2016 (ISTDM2016)
- Place of Presentation
  Nagoya University (Aichi)
- Year and Date
  2016-06-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286044
[Presentation] Compressively strained Si/Si1-xCx heterostructures formed by Ar ion implantation technique2015
- Author(s)
  Y.Hoshi, K.Arimoto, K.Sawano, Y.Arisawa, K.Fujiwara, J.Yamanaka, K.Nakagawa, and N.Usami
- Organizer
  The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI 9)
- Place of Presentation
  Montreal, Canada
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24360001
[Presentation] Growth of strained Si/SiGe on Si(110) substrates for realization of high-mobility devices2015
- Author(s)
  Keisuke Arimoto
- Organizer
  EMN 3CG 2015
- Place of Presentation
  Hong Kong
- Year and Date
  2015-12-14
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K04661
[Presentation] Arイオン注入法を用いた圧縮歪み/緩和Si1-xCxヘテロ構造の作製2015
- Author(s)
  有澤洋, 星裕介, 藤原幸亮, 山中淳二, 有元圭介, 中川清和, 澤野憲太郎, 宇佐美徳隆
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-12
- Data Source
  KAKENHI-PROJECT-24360001
[Presentation] Si(110)基板上SiGe膜の歪み緩和におけるイオン注入の効果2015
- Author(s)
  加藤まどか、村上太陽、有元圭介、山中淳二、中川清和、澤野憲太郎
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15K04661
[Presentation] Compressively strained Si/Si1-xCx heterostructures formed by Ar ion implantation technique2015
- Author(s)
  Y. Hoshi, K. Arimoto, K. Sawano, Y. Arisawa, K. Fujiwara, J. Yamanaka, K. Nakagawa, and N. Usami
- Organizer
  9th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Montreal
- Year and Date
  2015-05-19
- Data Source
  KAKENHI-PROJECT-24360001
[Presentation] 伸張歪みSi/緩和SiGe/Si(110)の表面モフォロジーへの成長速度の影響2015
- Author(s)
  宇津山直人、佐藤圭、有元圭介、山中淳二、中川清和、宇佐美徳隆、澤野憲太郎
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学（神奈川）
- Year and Date
  2015-03-12
- Data Source
  KAKENHI-PROJECT-25870280
[Presentation] イオン注入成長法で作製した圧縮歪みSi/Si1-xCx/Si(001)構造MOSFETの電気特性評価2015
- Author(s)
  中込諒、酒井翔一朗、藤原幸亮、有元圭介、山中淳二、中川清和、宇佐美徳隆、星裕介、澤野憲太郎
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-12
- Data Source
  KAKENHI-PROJECT-24360001
[Presentation] イオン注入による欠陥制御を用いて作製した圧縮歪みSi/Si1-xCx ヘテロ構造の熱的安定性2015
- Author(s)
  有澤洋、星裕介、有元圭介、山中淳二、中川清和、澤野憲太郎、宇佐美徳隆
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-24360001
[Presentation] Compressively strained Si/Si1-xCx heterostructures formed by Ar ion implantation technique2015
- Author(s)
  Y. Hoshi, K. Arimoto, K. Sawano, Y. Arisawa, K. Fujiwara, J. Yamanaka, K. Nakagawa, N. Usami
- Organizer
  9th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Montreal, Canada
- Year and Date
  2015-05-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26286044
[Presentation] 歪みSi/Si1-xCx/Si(001)ヘテロ構造の結晶性と不純物活性化過程との関係2015
- Author(s)
  藤原幸亮、酒井翔一朗、小林昭太、有元圭介、山中淳二、中川清和、宇佐美徳隆、星裕介、澤野憲太郎
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学
- Year and Date
  2015-03-12
- Data Source
  KAKENHI-PROJECT-24360001
[Presentation] 2歪みSi/Si1-xCx/Si(001) 構造の不純物活性化過程における結晶性及び電気特性評価2014
- Author(s)
  藤原幸亮、酒井翔一朗、古川洋志、井上樹範、有元圭介、山中淳二、中川清和、宇佐美徳隆、星裕介、澤野憲太郎
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-18
- Data Source
  KAKENHI-PROJECT-24360001
[Presentation] イオン注入法で作製した圧縮歪みSi/Si1-xCx/Si(001) 構造の結晶性及びデバイス特性評価2014
- Author(s)
  中込諒、酒井翔一朗、藤原幸亮、古川洋志、有元圭介、山中淳二、中川清和、宇佐美徳隆、星裕介、澤野憲太郎
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学
- Year and Date
  2014-09-18
- Data Source
  KAKENHI-PROJECT-24360001
[Presentation] イオン注入法がSi1-xCx/Si(001)構造の欠陥形成過程に及ぼす効果2014
- Author(s)
  中込諒、酒井翔一朗、藤原幸亮、古川洋志、有元圭介、山中淳二、中川清和、宇佐美徳隆、星裕介、澤野憲太郎
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-24360001
[Presentation] 圧縮歪みSi/Si1-xCx/Si(100)ヘテロ構造における炭素傾斜組成の電気伝導特性への効果2014
- Author(s)
  酒井翔一朗、古川洋志、有元圭介、山中淳二、中川清和、宇佐美徳隆、星裕介、澤野憲太郎
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-24360001
[Presentation] 伸張歪みSi/ 緩和SiGe/Si(110) の微細構造および電気的特性への熱処理の影響2014
- Author(s)
  宇津山直人、有元圭介、山中淳二、中川清和、宇佐美徳隆、澤野憲太郎
- Organizer
  第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学（北海道）
- Year and Date
  2014-09-18
- Data Source
  KAKENHI-PROJECT-25870280
[Presentation] 不純物イオン注入および熱処理がSi1-xCx層の結晶性に及ぼす影響2014
- Author(s)
  藤原幸亮、酒井翔一朗、古川洋志、井上樹範、有元圭介、山中淳二、中川清和、宇佐美徳隆、星裕介、澤野憲太郎
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-24360001
[Presentation] ガスソース MBE 法による圧縮歪み Si/緩和 Si_1-x C_x /Si ヘテロ構造の形成と構造評価2013
- Author(s)
  古川洋志、酒井翔一朗、有元圭介、山中淳二、中川清和、星裕介、宇佐美徳隆
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2013-03-28
- Data Source
  KAKENHI-PROJECT-23760011
[Presentation] 圧縮歪みSi/Si1-xCx/Si(100)構造を用いたMOSFETに関する研究2013
- Author(s)
  中込諒、酒井翔一朗、藤原幸亮、古川洋志、有元圭介、山中淳二、中川清和、宇佐美徳隆、星裕介、澤野憲太郎、白木靖寛
- Organizer
  第２回結晶工学未来塾
- Place of Presentation
  学習院大学
- Data Source
  KAKENHI-PROJECT-24360001
[Presentation] ガスソースMBE法による圧縮歪みSi/緩和Si1-xCx /Siヘテロ構造の形成と構造評価2013
- Author(s)
  有元圭介
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学（神奈川県厚木市）
- Data Source
  KAKENHI-PROJECT-23760011
[Presentation] ガスソースMBE法による圧縮歪みSi/緩和Sil-xCx /Siヘテロ構造の形成と構造評価2013
- Author(s)
  古川洋志、有元圭介、山中淳二、中川清和、宇佐美徳隆
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2013-03-28
- Data Source
  KAKENHI-PROJECT-24360001
[Presentation] Si1-xCx混晶半導体の不純物活性化プロセスにおける結晶欠陥形成過程の解明2013
- Author(s)
  藤原幸亮、酒井翔一朗、古川洋志、井上樹範、有元圭介、山中淳二、中川清和、宇佐美徳隆、星裕介、澤野憲太郎、白木靖寛
- Organizer
  第２回結晶工学未来塾
- Place of Presentation
  学習院大学
- Data Source
  KAKENHI-PROJECT-24360001
[Presentation] 圧縮歪みSi/Si1-xCx/Si(100)ヘテロ構造の形成と評価2012
- Author(s)
  酒井翔一郎、古川洋志、有元圭介、山中淳二、中川清和、宇佐美徳隆、星裕介、澤野憲太郎、白木靖寛
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-23760011
[Presentation] Gas-source MBE growth of compressively strained-Si/Si1-xCx/Si(100) heterostructures2012
- Author(s)
  Keisuke Arimoto
- Organizer
  The 17th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  奈良県新公会堂（奈良県奈良市）
- Data Source
  KAKENHI-PROJECT-23760011
[Presentation] Gas-source MBE growth of compressively strained-Si/Si1-xCx/Si(100) heterostructures2012
- Author(s)
  S. Sakai, H. Furukawa, K. Arimoto, J. Yamanaka, K. Nakagawa, Y. Hoshi, K. Sawano, Y. Shiraki, N. Usami
- Organizer
  The 17th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  奈良県新公会堂
- Year and Date
  2012-09-27
- Data Source
  KAKENHI-PROJECT-23760011
[Presentation] 低速電子線誘起反応と低温トンネル反応によるa-SiCx : Hの極低温合成2012
- Author(s)
  山田竜太郎,小林直樹,胡雪冰,佐藤哲也,有元圭介,山中淳二,中川清和
- Organizer
  2012春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21560031
[Presentation] 圧縮歪み Si/Si_1-X C_X /Si(100)ヘテロ構造の形成と評価2012
- Author(s)
  酒井翔一朗、古川洋志、有元圭介、山中淳二、中川清和、宇佐美徳隆、星裕介、澤野憲太郎、白木靖寛
- Organizer
  第59回応用物理学会春季学術講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-23760011
[Presentation] Gas-source MBE growth of compressively strained-Si/Si1-xCx/Si(100) heterostructures2012
- Author(s)
  S. Sakai, H. Furukawa, K. Arimoto, J. Yamanaka, K. Nakagawa, Y. Hoshi, K. Sawano, Y. Shiraki, N. Usami
- Organizer
  The 17th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  奈良
- Year and Date
  2012-09-27
- Data Source
  KAKENHI-PROJECT-24360001
[Presentation] 低速電子線照射により極低温合成したカーボン膜のESRによる構造欠陥評価2011
- Author(s)
  小林直樹,山田竜太郎,年森隆明,森田直樹,佐藤哲也,有元圭介,山中淳二,中川清和
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学小白川キャンパス
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-21560031
[Presentation] Formation of Compressively Strained Si/Si1-xCx/Si(100) Heterostructure Using Gas-source MBE2011
- Author(s)
  H. Furukawa, K. Arimoto, J. Yamanaka, K. Nakagawa, N. Usami, K. Sawano, Y. Shiraki
- Organizer
  The 5th Asian Conference on Crystal Growth and Crystal Technology
- Place of Presentation
  シンガポール
- Data Source
  KAKENHI-PROJECT-23760011
[Presentation] 低速電子線誘起反応と低温トンネル反応により合成した炭素膜のTEM観察2010
- Author(s)
  森田直樹,伊東佑将,渡辺陵,荒井哲司,佐藤哲也,山本千綾,有元圭介,山中淳二,中川清和
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学湘南キャンパス
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-21560031
[Presentation] 低速電子線誘起反応とトンネル反応により合成した炭素薄膜の表面分析2009
- Author(s)
  森田直樹,伊東佑将,胡雪氷,土屋新平,渡辺陵,佐藤哲也,山本千綾,有元圭介,山中淳二,中川清和
- Organizer
  2009年度実用表面分析講演会(PSA-09)
- Place of Presentation
  山梨大学
- Year and Date
  2009-11-19
- Data Source
  KAKENHI-PROJECT-21560031
[Presentation] 低速電子誘起成膜法によるSiNxの極低温合成と物性評価2007
- Author(s)
  小林憲明, 伊東佑将, 佐藤哲也, 三井実, 有元圭介, 山中淳二, 中川清和, 佐藤昇司
- Organizer
  第50回放射線化学討論会
- Place of Presentation
  京都大学, 宇治キャンパス
- Data Source
  KAKENHI-PROJECT-18550014
[Presentation] Formation of Uniaxially Strained SiGe with High Ge Concentrations by Selective Ion Implantation
- Author(s)
  Eisuke Yonekura, JunjiYamanaka, KeisukeArimoto, KiyokazuNakagawa, YasuhiroShirakiand KentarouSawano
- Organizer
  7th International Silicon-Germanium Technology and Device Meeting, 2014 ISTDM
- Place of Presentation
  Singapore
- Year and Date
  2014-06-02 – 2014-06-04
- Data Source
  KAKENHI-PROJECT-26286044
[Presentation] 固相成長法によるCap-Si/SiGe/Si(110)ヘテロ構造の形成と界面準位及び移動度の評価
- Author(s)
  小幡智幸、有元圭介、山中淳二、中川清和、星裕介、澤野憲太郎、白木靖寛
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-25870280
[Presentation] Growth of strained Si/SiGe on Si(110) substrates for realization of high-mobility devices
- Author(s)
  Keisuke Arimoto
- Organizer
  Collaborative Conference on Crystal Growth 2015
- Place of Presentation
  香港（中国）
- Year and Date
  2015-12-14 – 2015-12-17
- Invited
- Data Source
  KAKENHI-PROJECT-25870280
[Presentation] 伸長歪みSi/SiGe/Si(110)薄膜構造の形成と評価
- Author(s)
  三井翔平、有元圭介、山中淳二、中川清和、宇佐美徳隆、澤野憲太郎、白木靖寛
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学
- Data Source
  KAKENHI-PROJECT-25870280
[Presentation] Cap-Si/圧縮歪みSiGeチャネル/Si(110)ヘテロ構造を有するp-MOSFETの界面準位密度と正孔移動度に与えるCap-Si膜厚の影響
- Author(s)
  小幡智幸、有元圭介、山中淳二、中川清和、澤野憲太郎
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学
- Data Source
  KAKENHI-PROJECT-25870280

1. YAMNAKA Junji (20293441)

# of Collaborated Projects: 6 results

# of Collaborated Products: 84 results
2. SAWANO Kentaro (90409376)

# of Collaborated Projects: 4 results

# of Collaborated Products: 42 results
3. SATO Tetsuya (60252011)

# of Collaborated Projects: 2 results

# of Collaborated Products: 5 results
4. NAKAGAWA Kiyokazu (40324181)

# of Collaborated Projects: 2 results

# of Collaborated Products: 5 results
5. MIYAJIMA Naoya (20345698)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. Usami Noritaka (20262107)

# of Collaborated Projects: 1 results

# of Collaborated Products: 18 results
7. 花田賢志 (30637319)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 田渕雅夫 (90222124)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 柳博 (30361794)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results

ARIMOTO Keisuke 有元 圭介

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構造敏感性をもつ半導体薄膜の歪分布マルチスケール可視化新手法の開発

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SnSの欠陥化学の探究と薄膜トランジスタへの展開

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Investigation on the interface states at strained Si/SiO2 interfaces formed on Si(110) substratesPrincipal Investigator

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Interaction between transition metal impurities and dislocations in diamond crystals

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Control of defects and surface morphology on strained Si/SiGe/Si(110) structure using the ion implantation methodPrincipal Investigator

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Development of high-mobility strained Si/SiGe/Si(110) heterostructure by suppression of dislocation generationPrincipal Investigator

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Developments of high mobility uniaxially strained Germanium channel devices

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Control of crystalline defect generation processes for realization of high-hole-mobility strained Si thin films and its application to electronic devicesPrincipal Investigator

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Realization of compressively strained silicon by defect control using ion implantation and application to high hole mobilty devices

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Studies on defect formation process and electrical properties of Silicon-Carbon strained heterostructuresPrincipal Investigator

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Study on the formation of carbon thin films obtained by electron-beam-induced-chemical vapor deposition combined with ultra low-temperature tunneling reaction of H atoms at ultra low temperature

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Study on the formation of hydrogenated silicon films and silicon nano-structural materials obtained by electron-beam-induced-chemical vapor deposition at ultra low temperature

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[Journal Article] Evaluation of Lattice Spacing of Precipitates and Matrix in a Ni-Al-Ti alloy by NBD and Image Analysis using Two Condenser-Lens TEM2024

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ARIMOTO Keisuke 有元圭介

[Journal Article] Evaluation of Crystal Lattice Rotation around a Stress-Induced Twin in a Step-Graded SiGe / Si(110) Using STEM Moiré Observation and its Image Analysis2019