Higashi Seiichiro 東清一郎

… Alternative Names

HIGASHI Seiichiro 東清一郎

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Researcher Number	30363047
Other IDs
Affiliation (Current)	2025: 広島大学, 先進理工系科学研究科(先), 教授
Affiliation (based on the past Project Information) *help	2020 – 2024: 広島大学, 先進理工系科学研究科(先), 教授 2015 – 2018: 広島大学, 先端物質科学研究科, 教授 2010 – 2011: 広島大学, 先端物質科学研究科, 教授 2010: 広島大学, 大学院・先端物質科学研究科, 教授 2007 – 2009: Hiroshima University, 大学院・先端物質科学研究科, 准教授 … More 2008: Hiroshima University, 大学院・先端物質化学研究科, 准教授 2006: 広島大学, 大学院先端物質科学研究科, 助教授 2003 – 2006: 広島大学, 大学院・先端物質科学研究科, 助教授 Less
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Basic Section 21060:Electron device and electronic equipment-related / Medium-sized Section 14:Plasma science and related fields / Electron device/Electronic equipment / Measurement engineering Except Principal Investigator Electronic materials/Electric materials / Science and Engineering
Keywords	Principal Investigator 大気圧プラズマ / 非接触温度測定 / 薄膜トランジスタ / 自己発熱 / 界面熱抵抗 / 信頼性 / 半導体デバイス / thermometry / self heating / semiconductor device … More / 微細加工 / MEMS / 電子デバイス・機器 / シリコン / 電気電子材料 / 優先配向 / 結晶成長 / 転写 / 単結晶シリコン / 転写技術 / フレキシブルエレクトロニクス / 溶融ゾーン / 固相結晶化 / 結晶化 / 大気圧プラズマジェット / 急速熱処理 / 極浅接合 / 不純物活性化 / 超々大規模集積回路 / 計測システム … More Except Principal Investigator 量子ドット / フローティングゲート / Si量子ドット / エレクトロルミネッセンス / Quantum dots / 自己組織化 / Ge量子ドット / 縦積み連結 / LPCVD / 一次元連結 / スーパーアトム / 不揮発性メモリ / 量子サイズ効果 / 不揮発メモリ / メモリデバイス / ハイブリッド構造 / シリサイドナノドット / シリコン量子ドット / 光レスポンス / ハイブリッドドット / 金属ナノドット / フローティングゲートメモリ / ハイブリッドナノドット / ナノ結晶 / 発光デバイス Less

光学干渉非接触温度計測法によるデバイス自己発熱過程のイメージング技術に関する研究Principal Investigator
- Principal Investigator
  
  東清一郎
- Project Period (FY)
  2022 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Hiroshima University
Atmospheric pressure thermal plasma jet generation by MEMS integrationPrincipal Investigator
- Principal Investigator
  
  Higashi Seiichiro
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 14:Plasma science and related fields
- Research Institution
  Hiroshima University
Development of single-crystalline silicon CMOS technology on flexible substrate by atomospheric pressure thermal plasma jet crystallizetionPrincipal Investigator
- Principal Investigator
  
  Higashi Seiichiro
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hiroshima University
Study on Hetero Integration Technology of Devices on Flexible SubstratePrincipal Investigator
- Principal Investigator
  
  Higashi Seiichiro
- Project Period (FY)
  2015 – 2016
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Hiroshima University
マイクロ熱プラズマジェット照射による四族半導体単結晶ナノ薄膜成長Principal Investigator
- Principal Investigator
  
  東清一郎
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hiroshima University
Control of Electronic Properties of One-Dimensionally Self-Aligned Si-Ge based Quantum Dots and Its Electroluminescence
- Principal Investigator
  
  MIYAZAKI Seiichi
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
  Hiroshima University
Noncontact Temperature Measurement During Rapid Thermal Annealing and Investigation on Impurity ActivationPrincipal Investigator
- Principal Investigator
  
  HIGASHI Seiichiro
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Measurement engineering
- Research Institution
  Hiroshima University
Integration of silicon-based nano-scalestructure and its functional memory device application
- Principal Investigator
  
  MIYAZAKI Seiichi
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Hiroshima University
シリコン系スーパーアトム構造の高密度集積と新機能材料創成
- Principal Investigator
  
  宮崎誠一
- Project Period (FY)
  2006 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hiroshima University
PN制御シリコン系ナノ結晶集積構造におけるキャリア輸送とエレクトロルミネッセンス
- Principal Investigator
  
  MIYAZAKI Seiichi
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hiroshima University
The fabrication of super atom structure using Si based self-assembled quantum dots and its electron state control
- Principal Investigator
  
  MIYAZAKI Seiichi
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HIROSHIMA UNIVERSITY

[Book] プラズマ・核融合学会誌(熱プラズマによるアモルファスシリコンの結晶化:講座熱流を伴う反応性プラズマを用いた材料合成プロセス3. 結晶化・相変化制御への応用, vol.85,No.3)2009
- Author(s)
  東清一郎、宮崎誠一
- Data Source
  KAKENHI-PROJECT-18063017
[Book] 薄膜トランジスタ(薄膜材料デバイス研究会編)2008
- Author(s)
  浦岡行治,神谷利夫,木村睦,佐野直樹,鮫島俊之,清水耕作,竹知和重,中村雅一,東清一郎,古田守,堀田将
- Publisher
  コロナ社
- Data Source
  KAKENHI-PROJECT-19360187
[Journal Article] Development of a real-time temperature measurement technique for SiC wafer during ultra-rapid thermal annealing based on optical-interference contactless thermometry (OICT)2023
- Author(s)
  Jiawen Yu, Hiroaki Hanafusa, and S. Higashi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 62 Issue: SC Pages: SC1075-SC1075
- DOI
  10.35848/1347-4065/acb1bb
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23K22824
[Journal Article] Extremely high-power-density atmospheric-pressure thermal plasma jet generated by the nitrogen-boosted effect2018
- Author(s)
  H. Hanafusa, R. Nakashima, W. Nakano, and S. Higashi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 57 Issue: 6S2 Pages: 06JH01-06JH01
- DOI
  10.7567/jjap.57.06jh01
- NAID
  210000149213
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H04334
[Journal Article] Generation of ultra high-power thermal plasma jet and its application to crystallization of amorphous silicon films2017
- Author(s)
  R. Nakashima, R. Shin, H. Hanafusa, and S. Higashi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 56 Issue: 6S2 Pages: 06HE05-06HE05
- DOI
  10.7567/jjap.56.06he05
- NAID
  210000147968
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16H04334
[Journal Article] Meniscus-force-mediated layer transfer technique using single-crystalline silicon films with midair cavity: Application to fabrication of CMOS transistors on plastic substrates2015
- Author(s)
  Kohei Sakaike, Muneki Akazawa, Akitoshi Nakagawa and Seiichiro Higashi
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: 54 Issue: 4S Pages: 04DA08-04DA08
- DOI
  10.7567/jjap.54.04da08
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-13J02156, KAKENHI-PROJECT-15K13976
[Journal Article] Formation of silicon-on-insulator layer with midair cavity for meniscus force-mediated layer transfer and high-performance transistor fabrication on glass2015
- Author(s)
  M. Akazawa, K. Sakaike, and S. Higashi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 54 Issue: 8 Pages: 086503-1
- DOI
  10.7567/jjap.54.086503
- NAID
  210000145520
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-15K13976
[Journal Article] Application of Thermal Plasma Jet Irradiation to Crystallization and Gate Insulator Improvement for High-Performance Thin-Film Transistor Fabrication2011
- Author(s)
  S.Higashi, S.Hayashi, Y.Hiroshige, Y.Nishida, H.Murakami, S.Miyazaki
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 50
- NAID
  210000070175
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360126
[Journal Article] Formation of High Density Pt Nanodots on SiO_2 Induced by Millisecond Rapid Thermal Annealing using Thermal Plasma Jet for Floating Gate Memory2011
- Author(s)
  K. Makihara, K. Matsumoto, M. Yamane, T. Okada, N. Morisawa, M. Ikeda, S. Higashi and S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: Vol.50, No.8 Issue: 8S2 Pages: 08KE06-08KE06
- DOI
  10.1143/jjap.50.08ke06
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246053
[Journal Article] Activation of B and As in Ultrashallow Junction During Millisecond Annealing Induced by Thermal Plasma Jet Irradiation2010
- Author(s)
  K. Matsumoto, S. Higashi, H. Murakami, S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys 49
- NAID
  210000068160
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360187
[Journal Article] Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication2010
- Author(s)
  S.Hayashi, S.Higashi, H.Murakami, S.Miyazaki
- Journal Title
  
  Appl.Phys.Express
  
  Volume: 3 Pages: 61401-61401
- NAID
  10027015042
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360126
[Journal Article] Activation of B and As in Ultrashallow Junction During Millisecond Annealing Induced by Thermal Plasma Jet Irradiation2010
- Author(s)
  K.Matsumoto, S.Higashi, H.Murakami, S.Miyazaki
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 49
- NAID
  210000068160
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360126
[Journal Article] Formation of High Quality SiO_2 and SiO_2/Si Interface using Thermal Plasma Jet Induced Millisecond Annealing and Post-Metallization Annealing2010
- Author(s)
  Y.Hiroshige, S.Higashi, K.Matsumoto, S.Miyazaki
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 48
- NAID
  110008001103
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360126
[Journal Article] Characterization of Microcrystalline Silicon Thin Film Transistors Fabricated by Thermal Plasma Jet Crystallization Technique2010
- Author(s)
  S. Higashi, K. Sugakawa, H. Kaku, T. Okada, S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys 49
- NAID
  210000068062
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360187
[Journal Article] Characterization of Microcrystalline Silicon Thin Film Transistors Fabricated by Thermal Plasma Jet Crystallization Technique2010
- Author(s)
  S.Higashi, K.Sugakawa, H.Kaku, T.Okada, S.Miyazaki
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: 49
- NAID
  210000068062
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360126
[Journal Article] "熱プラズマによるアモルファスシリコンの結晶化, "「講座熱流を伴う反応性プラズマを用いた材料合成プロセス3. 結晶化・相変化制御への応用」2009
- Author(s)
  東清一郎, 宮崎誠一
- Journal Title
  
  プラズマ・核融合学会誌 85(3)
  
  Pages: 119-123
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360187
[Journal Article] Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique2009
- Author(s)
  K. Makihara, K. Shimanoe, M. Ikeda, A. Ohta, S. Higashi, S. Miyazaki
- Journal Title
  
  Trans. of MRS-J Vol.34,No.2
  
  Pages: 309-312
- NAID
  130005003983
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS Memories2009
- Author(s)
  K. Shimanoe, K. Makihara, M. Ikeda, R. Matsumoto, S. Higashi, S. Miyazaki
- Journal Title
  
  IEICE Trans. on Electronics Vol.E92-C,No.5
  
  Pages: 616-619
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Millisecond Rapid Thermal Annealing of Si wafer Induced by High Power Density Thermal Plasma Jet Irradiation and Its application to Ultra Shallow Junction Formation2009
- Author(s)
  H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys 48(4)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360187
[Journal Article] Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases2008
- Author(s)
  R. Matsumoto, M. Ikeda, S. Higashi and S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys Vol.47, No.4B
  
  Pages: 3103-3106
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots / SiO_2 Structure as Evaluated by AFM/KFM2008
- Author(s)
  K.Makihara, J. Nishitani, M. Ikeda, S. Higashi, S. Miyazaki
- Journal Title
  
  Institute of Electronics Informatioii and Communication Engineers Transactions on Electronics E91-C
- NAID
  110006343827
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases2008
- Author(s)
  R. Matsumoto, M. Ikeda, S. Higashi, S. Miyazaki
- Journal Title
  
  Japanese Journal of Applied Physics 47
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Impact of impurity Doping into Si Quantum Dots with GeCore on Their Electrical Charging Characteristics2008
- Author(s)
  K. Makihara, M. Ikeda, S. Higashi, s. Miyazaki
- Journal Title
  
  Thin Solid Films 517
  
  Pages: 306-308
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] Self-Assembling Formation of Ninanodots on SiO_2 Induced by Remote H_2-plasma Treatment and Their Electrical Charging Characteristics2008
- Author(s)
  K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi and S. Miyazaki
- Journal Title
  
  Japanese Journal of Applied Physics 47(in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] Self-Assembling Formation of Ninanodots on SiO_2 Induced by Remote H_2-plasma Treatment and Their Electrical Charging Characteristics2008
- Author(s)
  K. Makihara, K. Shimanoe. Y. Kawaguchi, M. Dceda, S. Higashi, S. Miyazaki
- Journal Title
  
  Japanese Journal of Applied Physics 47
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate Biases2008
- Author(s)
  R. Matsumoto, M. Ikeda, S. Higashi and S. Miyazaki
- Journal Title
  
  Japanese Journal of Applied Physics 47
  
  Pages: 3103-3106
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO22008
- Author(s)
  K. Makihara, A. Kawanami, M. Ikeda, S. Higashi, S. Miyazaki
- Journal Title
  
  Electrochemical Society Transaction 16
  
  Pages: 255-260
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate Biases2008
- Author(s)
  R. Matsumoto, M. Ikeda, S. Higashi, s. Miyazaki
- Journal Title
  
  Japanese Journal of Applied Physics 47
  
  Pages: 3103-3106
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation2008
- Author(s)
  H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, S. Miyazaki
- Journal Title
  
  Jpn. J. Appl. Phys 47(4)
  
  Pages: 2460-2463
- NAID
  10022549196
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360187
[Journal Article] Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO_2 Structure as Evaluated by AFM/KFM2008
- Author(s)
  K. Makihara, J. Nishitani, M. Ikeda, S. Higashi and S, Miyazaki
- Journal Title
  
  Institute of Electronics Information and Communication Engineers Transactions on Electronics E91-C(in press)
- NAID
  110006343827
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] Impact of impurity Doping into Si Quantum Dots with GeCore on Their Electrical Charging Characteristics2008
- Author(s)
  K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
- Journal Title
  
  Thin Solid Films 517
  
  Pages: 306-308
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO22008
- Author(s)
  K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki
- Journal Title
  
  Electrochemical Society Transaction 16
  
  Pages: 255-260
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases2008
- Author(s)
  R. Matsumoto, M. Ikeda, S. Higashi and S. Miyazaki
- Journal Title
  
  Japanese Journal of Applied Physics 47(in press)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] In-situ Monitoring of Si Wafer Temperature during Millisecond Rapid Thermal Annealing2008
- Author(s)
  H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, S. Miyazaki
- Journal Title
  
  Electrochem. Soc. Trans 13(1)
  
  Pages: 31-36
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360187
[Journal Article] Self-Assembling Formation of Ninanodots on SiO2 Induced by Remote H2-plasma Treatment and Their Electrical Charging Characteristics2008
- Author(s)
  K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi, s. Miyazaki
- Journal Title
  
  Japanese Journal of Applied Physics 47
  
  Pages: 3099-3102
- NAID
  210000064670
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO2 Structure as Evaluated by AFM/KFM2008
- Author(s)
  K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
- Journal Title
  
  Institute of Electronics, Information and Communication Engineers Trans. on Electronics 91-C
  
  Pages: 712-715
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Self-Assembling Formation of Ni nanodots on SiO2 Induced by Remote H2-plasma Treatment and Their Electrical Charging Characteristics2008
- Author(s)
  K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi and S. Miyazaki
- Journal Title
  
  Jpn. J. of Appl. Phys Vol.47, No.4
  
  Pages: 3099-3102
- NAID
  210000064670
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Progress on Charge Distribution in Multiply-Stacked Si Quanturn Dots/SiO2 Structure as Evaluated by AFM/KFM2008
- Author(s)
  K. Makihara, M. Ikeda, S. Higashi, s. Miyazaki
- Journal Title
  
  Institute of Electronics, Information and Communication Engineers Trans. on Electronics 91-C
  
  Pages: 712-715
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots2007
- Author(s)
  J. Xu, K. Makihara, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki
- Journal Title
  
  Solid State Phenomena 121-123
  
  Pages: 557-560
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique2007
- Author(s)
  R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki
- Journal Title
  
  Materials Science Forum 561-565
  
  Pages: 1213-1216
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18206035
[Journal Article] Characterization of Electronic Chareed States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique2007
- Author(s)
  R. Nishihara, K. Makihara, Y. Kawaguchi, M. Bceda, H. Murakami, S. Higashi, S. Miyazaki
- Journal Title
  
  Materials Science Forum 561-565
  
  Pages: 1213-1216
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quaatum Dots2007
- Author(s)
  J. Xu, K. Makihara, H Deki, Y. Kawaguchi. H. Murakami, S. Higashi, S. Miyazaki
- Journal Title
  
  Solid State Phenomena 121-123
  
  Pages: 557-560
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063017
[Journal Article] Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe2005
- Author(s)
  K.Makihara, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of the 4th Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Sep. 16, 2005, Hiroshima) [P-34]
  
  Pages: 100-101
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Multi Step Electron Chargeing to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases2005
- Author(s)
  T.Nagai, M.Ikeda, Y.Shimizu, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of the 4th Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Sep. 16, 2005, Hiroshima) [P-39]
  
  Pages: 110-111
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Experimental Evidence of Coulombic Interaction among Stored Charges in Single Si Dot as Detected by AFM/Kelvin Probe Technique2005
- Author(s)
  J.Nishitani, K.Makihara, Y.Darma, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  2005 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Seoul, Korea, June 28-30, 2005) [A9.4]
  
  Pages: 177-180
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Control of the nucleation density of si quantum dots by remote hydrogen plasma treatment2005
- Author(s)
  K.Makihara, H.Deki, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Applied Surface Science 244/1-4
  
  Pages: 75-78
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe Technique2005
- Author(s)
  J.Nishitani, K.Makihara, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of the 4th Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Sep. 16, 2005, Hiroshima) [P-40]
  
  Pages: 112-113
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe2005
- Author(s)
  K.Makihara, J.Xu, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Abst. of The Fourth Int. Conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [23D-6]
  
  Pages: 32-33
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe Technique2005
- Author(s)
  J.Nishitani, K.Makihara, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Abst. of The Fourth Int. Conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [25P2-32]
  
  Pages: 294-295
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of MaltiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases2005
- Author(s)
  T.Nagai, M.Ikeda, Y.Shimizu, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of The 2005 Int. Conf.on Solid State Devices and Materials [G-2-6]
  
  Pages: 174-175
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories2004
- Author(s)
  T.Nagai, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2004 Int. Conf. on Solid State Devices and Materials [H-2-4]
  
  Pages: 126-127
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Control of the Nucleation Density of Si Quantum Dots by Remote Hydrogen Plasma Treatment2004
- Author(s)
  K.Makihara, H.Deki, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Abst. of 12th Int. conf. on Solid Films and Surfaces(Hamamatsu, June 21-25, 2004) [A5-2]
  
  Pages: 137-137
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Local Characterization of Electronic Transport in Microcrystalline Germanium Thin Films by Atomic Force Microscopy Using a Conducting Probr2004
- Author(s)
  K.Makihara, Y.Okamoto, H.Nakagawa, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-19]
  
  Pages: 54-55
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories2004
- Author(s)
  T.Nagai, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing(Dec. 6, 2004, Hiroshima) [P-40]
  
  Pages: 100-101
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Fabrication of Multiply-Stacked Structures of Si Quantum-Dots Embedded in SiO_2 by Combination of Low-Pressure CVD with Remote Plasma Treatments2004
- Author(s)
  K.Makihara, H.Nakagawa, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing [P-35]
  
  Pages: 90-91
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique2004
- Author(s)
  K.Makihara, Y.Okamoto, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (Nagasaki, June 30-July 2, 2004)
- NAID
  110003175633
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Fabrication of Multiply-Stacked Structures of Si Quantum-Dots Embedded in SiO_2 by Combination of Low-Pressure CVD and Remote Plasma Treatments2003
- Author(s)
  K.Makihara, H.Nakagawa, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Dig. of Papers 2003 Int. Microprocesses and Nanotechnol. Conf. (Tokyo, October 27-29,2004)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Fabrication of Multiply-Stacked Structures of Si Quantum-Dots Embedded in Si02 by Combination of Low-Pressure CVD with Remote Plasma Treatments
- Author(s)
  K.Makihara, H.Nakagawa, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-35]
  
  Pages: 90-91
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Local Characterization of Electronic Transport in Microcrystalline Germanium Thin Films by Atomic Force Microscopy Using a Conducting Probr
- Author(s)
  K.Makihara.Y.Okamoto, H.Nakagawa, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2nd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Jan. 30, 2004, Hiroshima) [P-19]
  
  Pages: 54-55
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Fabrication of Multiply-Stacked Structures of Si Quantum-Dots Embedded in Si0_2 by Combination of Low-Pressure CVD and Remote Plasma Treatments
- Author(s)
  K.Makihara, H.Nakagawa, M.Ikeda, H.Murakami, S., Higashi, S.Miyazaki
- Journal Title
  
  Dig. of Papers 2003 Int. Microprocesses and Nanotechnol. Conf. (Tokyo, October 27-29, 2004) [28P-6-68L]
  
  Pages: 216-217
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Electronic Charged States of P-doped Si Quantum Dots Using AFM/Kelvin Probe
- Author(s)
  K.Makihara, J.Xu, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Abst. of The Fourth Int. conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [23D-6]
  
  Pages: 32-33
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Control of the Nucleation Density of Si Quantum Dots by Remote Hydrogen Plasma Treatment
- Author(s)
  K.Makihara, H.Deki, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Abst. of 12th Int. conf. on Solid Films and Surfaces (Hamamatsu, June 21-25, 2004 ) [A5-2]
  
  Pages: 137-137
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Decay Characteristics of Electronic Charged States of Si Quantum Dots as Evaluated by an AFM/Kelvin Probe Technique
- Author(s)
  J.Nishitani, K.Makihara, M.Ikeda, H.Murakami, S.Higashi, S.Miyzaki
- Journal Title
  
  Abst. of The Fourth Int. conf. on Silicon Epitaxy and Heterostructures(ICSI-4)(Awaji Island, Hyogo, Japan, May 23-26, 2005) [25P2-32]
  
  Pages: 294-295
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Photo-Induced Electron Charging to Silicon-Quantum-Dot. Floating Gate in Metal-Oxide-Semiconductor Memories
- Author(s)
  T.Nagai, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2004 Int. Conf. on Solid State Devices and Materials (Tokyo, September 15-17, 2004) [H-2-4]
  
  Pages: 126-127
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of Germanium Nanocrystallites Grown on SiO_2 by a Conductive AFM Probe Technique
- Author(s)
  K.Makihara, Y.Okamoto, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of 2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (Nagasaki, June 30-July 2, 2004) [A10.5]
  
  Pages: 277-280
- NAID
  110003175633
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Photo-Induced Electron Charging to Silicon-Quantum-Dot Floating Gate in Metal-Oxide-Semiconductor Memories
- Author(s)
  T.Nagai, M.Ikeda, H.Murakami, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of the 3rd Hiroshima Int. Workshop on 21th Century COE, Nanoelectronics for Tera-bit Information Processing (Dec. 6, 2004, Hiroshima) [P-40]
  
  Pages: 100-101
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Characterization of MaltiStep Electron Charging to Silicon-Quantum-Dot Floating Gate by Applying Pulsed Gate Biases
- Author(s)
  T.Nagai, M.Ikeda, Y.Shimizu, S.Higashi, S.Miyazaki
- Journal Title
  
  Ext. Abst. of The 2005 Int. Conf. on Solid State Devices and Materials [G-2-6]
  
  Pages: 174-175
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Journal Article] Experimental Evidence of Coulombic Interaction among Stored Charges in Single Si Dot as Detected by AFM/Kelvin Probe Technique
- Author(s)
  J.Nishitani, K.Makihara, Y.Darma, H.Murakami, S.Higashi, S.Miyzaki
- Journal Title
  
  2005 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (Seoul, Korea, June 28-30, 2005) [A9.4]
  
  Pages: 177-180
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206035
[Patent] 測定装置および測定方法2010
- Inventor(s)
  牧原克典, 宮崎誠一, 東清一郎
- Industrial Property Rights Holder
  広島大学
- Filing Date
  2010-02-04
- Overseas
- Data Source
  KAKENHI-PROJECT-21246053
[Patent] 測定装置および測定方法2010
- Inventor(s)
  牧原克典、宮崎誠一、東清一郎
- Industrial Property Rights Holder
  国立大学法人広島大学
- Filing Date
  2010-02-04
- Overseas
- Data Source
  KAKENHI-PROJECT-18063017
[Patent] 半導体メモリ、それを用いた半導体メモリシステム、および半導体メモリに用いられる量子ドジトの製造方法2010
- Inventor(s)
  牧原克典、宮崎誠一、東清一郎
- Industrial Property Rights Holder
  国立大学法人広島大学
- Filing Date
  2010-01-14
- Overseas
- Data Source
  KAKENHI-PROJECT-18063017
[Patent] 半導体メモリ、それを用いた半導体メモリシステム、および半導体メモリに用いられる量子ドットの製造方法2010
- Inventor(s)
  牧原克典, 宮崎誠一, 東清一郎
- Industrial Property Rights Holder
  広島大学
- Filing Date
  2010-01-14
- Overseas
- Data Source
  KAKENHI-PROJECT-21246053
[Patent] 測定装置および測定方法2008
- Inventor(s)
  牧原克典、宮崎誠一、東清一郎
- Industrial Property Rights Holder
  広島大学
- Filing Date
  2008-07-31
- Overseas
- Data Source
  KAKENHI-PROJECT-18063017
[Patent] 測定装置および測定方法2008
- Inventor(s)
  牧原克典, 宮崎誠一, 東清一郎
- Industrial Property Rights Holder
  広島大学
- Acquisition Date
  2008-07-31
- Overseas
- Data Source
  KAKENHI-PROJECT-18206035
[Patent] 半導体メモリ、それを用いた半導体メモリシステム、および半導体メモリに用いられる量子ドット製造方法2008
- Inventor(s)
  牧原克典、宮崎誠一、東清一郎
- Industrial Property Rights Holder
  広島大学
- Filing Date
  2008-03-01
- Data Source
  KAKENHI-PROJECT-18063017
[Patent] 測定装置および測定方法2008
- Inventor(s)
  牧原克典, 宮崎誠一, 東清一郎
- Industrial Property Rights Holder
  広島大学
- Industrial Property Number
  2008-552633
- Filing Date
  2008-07-31
- Data Source
  KAKENHI-PROJECT-18206035
[Patent] 半導体メモリ、それを用いた半導体メモリシステム、および半導体メモリに用いられる量子ドット製造方法2008
- Inventor(s)
  牧原克典, 宮崎誠一, 東清一郎
- Patent Publication Number
  2008-270705
- Filing Date
  2008-11-06
- Data Source
  KAKENHI-PROJECT-18063017
[Patent] 半導体素子2008
- Inventor(s)
  牧原克典, 宮崎誠一, 東清一郎, 村上秀樹
- Patent Publication Number
  2008-288346
- Filing Date
  2008-11-27
- Data Source
  KAKENHI-PROJECT-18063017
[Patent] 測定装置および測定方法2008
- Inventor(s)
  牧原克典、宮崎誠一、東清一郎
- Industrial Property Rights Holder
  広島大学
- Filing Date
  2008-07-31
- Data Source
  KAKENHI-PROJECT-18063017
[Patent] 半導体素子2007
- Inventor(s)
  牧原克典、宮崎誠一、東清一郎
- Industrial Property Rights Holder
  広島大学
- Filing Date
  2007-12-06
- Overseas
- Data Source
  KAKENHI-PROJECT-18063017
[Patent] 半導体メモリ2007
- Inventor(s)
  牧原克典, 宮崎誠一, 東清一郎
- Industrial Property Number
  2007-009772
- Filing Date
  2007-03-11
- Data Source
  KAKENHI-PROJECT-18063017
[Patent] 半導体メモリ、それを用いた半導体システム、および半導体メモリに用いられる量子ドットの製造方法2007
- Inventor(s)
  牧原克典、宮崎誠一、東清一郎
- Industrial Property Rights Holder
  広島大学
- Filing Date
  2007-12-06
- Overseas
- Data Source
  KAKENHI-PROJECT-18063017
[Patent] 半導体メモリ、それを用いた半導体システム、および半導体メモリに用いられる量子ドットの製造方法2007
- Inventor(s)
  牧原克典、宮崎誠一、東清一郎
- Industrial Property Rights Holder
  広島大学
- Filing Date
  2007-12-06
- Overseas
- Data Source
  KAKENHI-PROJECT-18206035
[Patent] 半導体素子2007
- Inventor(s)
  牧原克典、宮崎誠一、東清一郎
- Industrial Property Rights Holder
  広島大学
- Filing Date
  2007-12-06
- Overseas
- Data Source
  KAKENHI-PROJECT-18206035
[Patent] MOS電界効果トランジスタ型量子ドット発光素子および受光素子、これらを利用した光電子集積チップ2004
- Inventor(s)
  宮崎誠一, 東清一郎
- Industrial Property Rights Holder
  宮崎誠一, 東清一郎
- Industrial Property Number
  2004-207620
- Filing Date
  2004-07-14
- Data Source
  KAKENHI-PROJECT-15206035
[Presentation] Development of an experimental method for extraction of organic/semiconductor interfacial thermal resistance based on optical-interference contactless thermometry (OICT)2023
- Author(s)
  Jiawen Yu, 後藤隆之介, 花房宏明, 東清一郎
- Organizer
  2023年度応用物理・物理系中国四国支部合同学術講演会
- Data Source
  KAKENHI-PROJECT-23K22824
[Presentation] 3-D Imaging of Temperature Variations in 4H-SiC Schottky Barrier Diode under Operation based on Optical Interference Contactless Thermometry2023
- Author(s)
  S. Higashi, K. Fujimoto, and H. Hanafusa
- Organizer
  13th International Workshop on New Group IV Semiconductor Nanoelectronics
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22824
[Presentation] MEASUREMENT OF TRANSIENT HEAT TRANSFER ACROSS ORGANIC/SEMICONDUCTOR INTERFACE USING OPTICAL INTERFERENCE CONTACTLESS THERMOMETRY (OICT)2023
- Author(s)
  J. Yu, R. Goto, H. Hanafusa, S. Higashi
- Organizer
  33rd International Symposium on Transport Phenomena (ISTP-33)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22824
[Presentation] Interfacial Thermal Resistance Measurement at Polymer/Semiconductor Interface Using Optical-Interference Contactless Thermometry (OICT)2023
- Author(s)
  J. Yu, H. Hanafusa, S. Higashi
- Organizer
  4th China International Youth Conference on Electrical Engineering (CIYCEE2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22824
[Presentation] 光学干渉非接触温度測定法(OICT)を基盤としたSU-8/SiCの界面熱抵抗測定技術を開発2023
- Author(s)
  Yu Jiawen、後藤　隆之介、花房　宏明、東　清一郎
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K22824
[Presentation] Measurement of Heat Dissipation between SiC and Thermal Interface Material in Power Device Packaging Based on Optical-Interference Contactless Thermometry2023
- Author(s)
  J. Yu, R. Goto, H. Hanafusa, and S. Higashi
- Organizer
  2023 International Conference on Solid State Devices and Materials(SSDM2023),
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22824
[Presentation] Extraction of Organic/Semiconductor Interfacial Thermal Resisitance based on Optical Interference Contactless Thermometry (OICT)2023
- Author(s)
  J. Yu, H. Hanafusa, and S. Higashi
- Organizer
  2023 Asia-Pacific Workshop on Advanced Semiconductor Devices(AWAD2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22824
[Presentation] Development of a Real-Time Temperature Measurement Technique for SiC Wafer During Ultra-Rapid Thermal Annealing Based on Optical-Interference Contactless Thermometry (OICT)2022
- Author(s)
  J. Yu, K. Matsuguchi, T. Sato, H. Hanafusa, S. Higashi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K22824
[Presentation] OICT による通電加熱時におけるシリコンウェハ内部の３次元温度イメージング技術2022
- Author(s)
  松口　康太郎、Jiawen Yu、花房　宏明、東　清一郎
- Organizer
  先進パワー半導体分科会　第9回講演会
- Data Source
  KAKENHI-PROJECT-23K22824
[Presentation] 通電過熱時におけるシリコンウェハ内の過渡的温度分布の3次元イメージング2022
- Author(s)
  松口　康太郎、Yu Jiawen、花房　宏明、佐藤　拓磨、東　清一郎
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K22824
[Presentation] 光学干渉非接触温度測定法(OICT)によるシリコンウェハ内部の過渡的熱拡散過程の三次元イメージング2022
- Author(s)
  松口　康太郎、藤本　渓也、Yu Jiawen、花房　宏明、佐藤　拓磨、東　清一郎
- Organizer
  電子情報通信学会技術研究報告シリコン材料・デバイス研究会
- Data Source
  KAKENHI-PROJECT-23K22824
[Presentation] OICT による通電加熱時におけるSi ウェハ内の過渡的温度分布の３次元イメージング技術2022
- Author(s)
  松口　康太郎、Jiawen Yu、花房　宏明、東　清一郎
- Organizer
  薄膜材料デバイス研究会　第19回研究集会
- Data Source
  KAKENHI-PROJECT-23K22824
[Presentation] 微小プラズマジェット発生技術及びその集積化に関する研究2020
- Author(s)
  山下　隆祐、花房　宏明、東　清一郎
- Organizer
  薄膜材料デバイス研究会　第17回研究集会
- Data Source
  KAKENHI-PROJECT-20K20911
[Presentation] Ultra-High-Speed Crystallization of Amorphous Silicon Films on Flexible Glass Substrate by Thermal-PlasmaJet Irradiation Using Cylindrical Rotation Stage2018
- Author(s)
  W. Nakano, H. Hanafusa, S. Higashi
- Organizer
  2018 International Conference on Solid State Devices and Materials (SSDM2018), (Tokyo, Japan, Sept. 9-13, 2018). N-8-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04334
[Presentation] Analysis of a Molten Region on Amorphous Silicon Film By High-Speed Camera and Contactless Temperature Measurement during Atmospheric Pressure Thermal Plasma Jet Annealing2018
- Author(s)
  Y. Mizukawa, H. Hanafusa, and S. Higashi
- Organizer
  2018 ECS and SMEQ Joint Int. Meeting (Cancun, Mexico, Sept. 30 - Oct. 4, 2018), #1196
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04334
[Presentation] Activation of High-temperature-implanted Phosphorus Atoms in 4H-SiC by Atmospheric Pressure Thermal Plasma Jet Annealing2018
- Author(s)
  H. Hanafusa, S. Higashi
- Organizer
  Ext. Abs. 2018 18th Int. Workshop Junction Tech. (IWJT-2018), (Shanghai, China, Mar. 8-9, 2018), pp. 24-27
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04334
[Presentation] Nitrogen-boosted Atmospheric Pressure Thermal-Plasma-Jet Generation and Its Application to Crystallization of Amorphous Silicon Films on Flexible Glass2018
- Author(s)
  S. Higashi
- Organizer
  2018 Int. Thin-Film Transistor Conf. (ITC2018), (Guangzhou, China, Feb.- Mar. 2, 2018), pp. 46
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04334
[Presentation] Investigation on Crack suppression by Thermal-Plasma-Jet Crystallization of Amorphous Silicon Films on Flexible Glass Substrate2017
- Author(s)
  T. Hieda, H. Hanafusa, S. Higashi
- Organizer
  231st Electrochem. Soc. (ECS) Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04334
[Presentation] Extremely High-power-density Atmospheric Pressure Thermal-Plasma-Jet Generated by Nitrogen-boost Effect2017
- Author(s)
  H. Hanafusa, W. Nakano, R. Nakashima and S. Higashi
- Organizer
  Int. Symp. Dry Process (DPS2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04334
[Presentation] ハイパワー大気圧熱プラズマジェットの生成とアモルファスシリコン結晶化への応用2017
- Author(s)
  中島　涼介、新良太、花房宏明、東清一郎
- Organizer
  応用物理学会シリコンテクノロジー分科会　第199回研究集会
- Place of Presentation
  東京大学
- Year and Date
  2017-02-17
- Data Source
  KAKENHI-PROJECT-16H04334
[Presentation] ハイパワー大気圧熱プラズマジェットの加熱特性評価とシリコン薄膜の結晶成長制御2017
- Author(s)
  中島涼介、花房宏明、東清一郎
- Organizer
  第64回応用物理学会学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16H04334
[Presentation] Fabrication of single crystalline silicon thin film transistors and logic circuits on plastic substrate by meniscus force mediated layer transfer technique2017
- Author(s)
  R. Mizukami, S. Takeshima, T. Yamashita and S. Higashi
- Organizer
  13th Int. Thin-Film Transistor Conf. 2017 (ITC2017)
- Place of Presentation
  Austin, TX, USA
- Year and Date
  2017-02-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13976
[Presentation] 熱プラズマジェットによる超急速熱処理と半導体デバイス応用2017
- Author(s)
  東　清一郎
- Organizer
  日本物理学会　第72回年次大会
- Place of Presentation
  大阪大学
- Year and Date
  2017-03-17
- Invited
- Data Source
  KAKENHI-PROJECT-16H04334
[Presentation] Investigation on Crack Suppression Mechanism in Micro-Thermal-Plasma-Jet Crystallization of Amorphous Silicon Films on Flexible Glass Substrate2017
- Author(s)
  T. Hieda, H. Hanafusa, and S. Higashi
- Organizer
  Int. Workshop Nanodevice Technologies 2017
- Place of Presentation
  Higashi-Hiroshima, Japan
- Year and Date
  2017-03-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04334
[Presentation] 中空構造SOI層を用いた低温転写における転写歩留まり向上とプラスチック基板上での単結晶シリコンTFTと論理回路の作製2017
- Author(s)
  水上隆達、竹島真治、山下知徳、東清一郎
- Organizer
  第64回応用物理学会学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15K13976
[Presentation] Micro-thermal-plasma-jet Crystallization of Amorphous Silicon Films on Flexible Glass Substrate2017
- Author(s)
  T. Hieda, R. Shin, H. Hanafusa, S. Higashi
- Organizer
  34th Symposium on Plasma Processing (SPP34) / The 29th Symposium on Plasma Science for Materials (SPSM29)
- Place of Presentation
  Sapporo, Hokkaido, Japan
- Year and Date
  2017-01-16
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04334
[Presentation] Miniaturization of Single Crystalline Silicon Layer Transferred to Flexible Substrate by Meniscus Force Mediated Layer Transfer Technique2017
- Author(s)
  S. Takeshima, R. Mizukami, T. Yamashita, and S. Higashi
- Organizer
  Int. Workshop Nanodevice Technologies 2017
- Place of Presentation
  Hiroshima University
- Year and Date
  2017-03-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13976
[Presentation] 超ハイパワー大気圧プラズマジェットによる急速熱処理と単結晶シリコン成長技術への応用2017
- Author(s)
  東　清一郎
- Organizer
  エコ薄膜研究会
- Place of Presentation
  琉球大学
- Year and Date
  2017-01-30
- Invited
- Data Source
  KAKENHI-PROJECT-16H04334
[Presentation] Improvement of Transfer Yield of Single-Crystalline Silicon Films and Fabrication of Thin-Film Transistors and Inverters on Plastic Substrate2017
- Author(s)
  R. Mizukami, S. Takeshima, T. Yamashita, and S. Higashi
- Organizer
  Int. Workshop Nanodevice Technologies 2017
- Place of Presentation
  Hiroshima University
- Year and Date
  2017-03-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13976
[Presentation] 超ハイパワー熱プラズマジェットによる核生成制御2017
- Author(s)
  東　清一郎
- Organizer
  薄膜材料デバイス研究会　山陰特別研究会
- Place of Presentation
  島根県
- Year and Date
  2017-03-21
- Data Source
  KAKENHI-PROJECT-16H04334
[Presentation] Improvement of transfer yield of single-crystalline silicon films and fabrication of thin-film transistors on polyethylene terephthalate substrate2016
- Author(s)
  R. Mizukami, S. Takeshima, T. Yamashita, and S. Higashi
- Organizer
  International Conference on Flexible and Printed Electronics (ICFPE2016)
- Place of Presentation
  Yamagata, Japan
- Year and Date
  2016-09-06
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13976
[Presentation] Atmospheric pressure micro-thermal-plasma-jet irradiation on amorphous germaniumstrips and its application to thin film transistor fabrication2016
- Author(s)
  S. Higashi, H. Harada, T. Nakatani
- Organizer
  2016 Asia-Pacific Workshop Fundamentals and Applications of Advanced Semiconductor Dev. (AWAD2016)
- Place of Presentation
  Hakodate, Japan
- Year and Date
  2016-07-04
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04334
[Presentation] 中空構造 SOI 層を用いたフレキシブル基板への転写技術におけるパターン微小化2016
- Author(s)
  竹島真治、水上隆達、山下知徳、花房宏明、東清一郎
- Organizer
  薄膜材料デバイス研究会　第13回研究集会
- Place of Presentation
  龍谷大学
- Year and Date
  2016-10-21
- Data Source
  KAKENHI-PROJECT-15K13976
[Presentation] ハイパワー大気圧熱プラズマジェット照射によるシリコン薄膜の高速溶融結晶化と結晶成長制御2016
- Author(s)
  中島涼介、新良太、花房宏明、東清一郎
- Organizer
  薄膜材料デバイス研究会　第13回研究集会
- Place of Presentation
  龍谷大学
- Year and Date
  2016-10-20
- Data Source
  KAKENHI-PROJECT-16H04334
[Presentation] フレキシブルガラス基板上アモルファスシリコン膜の熱プラズマジェット結晶化2016
- Author(s)
  稗田竜己、新良太、花房宏明、東清一郎
- Organizer
  第77回応用物理学会学術講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16H04334
[Presentation] Generation of Ultra High Power Thermal Plasma Jet (Super TPJ) and Its Application to Crystallization of Amorphous Silicon Films2016
- Author(s)
  R. Nakashima, R. Shin, H. Hanafusa and S. Higashi
- Organizer
  Int. Symp. Dry Process (DPS2016)
- Place of Presentation
  Sapporo, Hokkaido, Japan
- Year and Date
  2016-11-21
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04334
[Presentation] 中空構造 SOI 層を用いた低温転写における転写歩留まり向上とフレキシブル基板上での単結晶シリコンTFT と論理回路の作製2016
- Author(s)
  水上隆達、竹島真治、山下知徳、東清一郎
- Organizer
  薄膜材料デバイス研究会　第13回研究集会
- Place of Presentation
  龍谷大学
- Year and Date
  2016-10-21
- Data Source
  KAKENHI-PROJECT-15K13976
[Presentation] Activation of Impurity Atoms in 4H-SiC Wafer by Atmospheric Pressure Thermal Plasma Jet Irradiation2016
- Author(s)
  S. Higashi
- Organizer
  2016 Int. Workshop Junction Tech. (IWJT-2016)
- Place of Presentation
  Shanghai, China
- Year and Date
  2016-05-09
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H04334
[Presentation] 大気圧プラズマによるIV 族半導体薄膜の結晶成長と欠陥制御2016
- Author(s)
  東　清一郎
- Organizer
  第77回応用物理学会学術講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Invited
- Data Source
  KAKENHI-PROJECT-16H04334
[Presentation] ハイパワー大気圧熱プラズマジェット照射によるシリコン薄膜の高速溶融結晶化2016
- Author(s)
  中島涼介、新良太、花房宏明、東清一郎
- Organizer
  第77回応用物理学会学術講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-16H04334
[Presentation] 中空構造SOI 層を用いた低温転写における転写歩留まり向上とフレキシブル基板上での単結晶シリコンTFT とインバータ回路の作製2016
- Author(s)
  水上隆達、竹島真治、山下知徳、東清一郎
- Organizer
  第77回応用物理学会学術講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15K13976
[Presentation] 中空構造SOI層の低温転写におけるFTIR-ATRを用いたシリコン/PET界面の化学結合状態評価2015
- Author(s)
  竹島真治、酒池耕平、赤澤宗樹、中川明俊、東清一郎
- Organizer
  第76回応用物理学会学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15K13976
[Presentation] 中空構造SOI層の低温転写におけるシリコン/PET界面の化学結合状態評価2015
- Author(s)
  竹島真治、酒池耕平、赤澤宗樹、東清一郎
- Organizer
  2015年度　応用物理・物理系学会中国四国支部　合同学術講演会
- Place of Presentation
  徳島大学　常三島キャンパス（徳島県・徳島市）
- Year and Date
  2015-08-01
- Data Source
  KAKENHI-PROJECT-15K13976
[Presentation] Silicon CMOS on glass and plastic - Crystallization and layer transfer approaches -2015
- Author(s)
  S. Higashi
- Organizer
  Semiconductor Tech. Ultra Large Scale Integrated Circuits and Thin Film Transistors V
- Place of Presentation
  Lake Tahoe, USA
- Year and Date
  2015-06-14
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13976
[Presentation] メニスカス力を用いた局所転写のための中空構造単結晶シリコンの形成2015
- Author(s)
  赤澤宗樹、東清一郎
- Organizer
  第76回応用物理学会学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15K13976
[Presentation] Formation of Single Crystalline Silicon with Midair Cavity for Meniscus Force-Mediated　Local Layer Transfer and Fabrication of High-Performance MOSFETs on Insulator2015
- Author(s)
  M. Akazawa, S. Takeshima, A. Nakagawa, K. Hiramatsu and S. Higashi
- Organizer
  Int. Conf. Solid State Dev. Mat. (SSDM2015)
- Place of Presentation
  Sapporo, Japan
- Year and Date
  2015-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13976
[Presentation] 熱プラズマジェットを用いたミリ秒熱処理によるPtおよびPtシリサイドナノドットの形成とフローティングゲートメモリ応用2012
- Author(s)
  牧原克典,山根雅人,池田弥央,東清一郎,宮崎誠一
- Organizer
  第59回春季応用物理学会
- Place of Presentation
  早稲田大学
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] Improvement in Electrical Stress Endurance of Low-Temperature Deposited SiO_2 Films by Atmospheric Pressure Thermal Plasma Jet Annealing2011
- Author(s)
  Y.Nishida, S.Hayashi, K.Matsumoto, S.Higashi
- Organizer
  4^<th> Int.Conf. Plasma Nanotechnology and Science (IC-PLANTS 2011)
- Place of Presentation
  Takayama, Japan
- Data Source
  KAKENHI-PROJECT-22360126
[Presentation] Fabrication of High performance TFTs Using Micro-Thermal-Plasma-Jet Crystallized Strip Amorphous Silicon Films2011
- Author(s)
  S.Hayashi, M.Ikeda, Y.Nishida, R.Matsubara, S.Higashi
- Organizer
  7^<th> Int.Thin-Film Transistor Conference (ITC 2011)
- Place of Presentation
  Cambridge, UK
- Data Source
  KAKENHI-PROJECT-22360126
[Presentation] Formation of PtAl Nanodots Induced by Remote Hydrogen Plasma2011
- Author(s)
  K. Makihara, M. Ikeda, A. Ohta, R. Ashihara, S. Higashi and S. Miyazaki
- Organizer
  15th International Conference on Thin Films(ICTF-15)
- Place of Presentation
  Kyoto
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] プラズマジェット急速熱処理による高密度Ptナノドット形成とフローティングゲートメモリ応用2011
- Author(s)
  牧原克典,池田弥央,山根雅人,東清一郎,宮崎誠一
- Organizer
  第72回秋季応用物理学会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-21246053
[Presentation] Characteristics of Thin Film Transistors Fabricated by Solid Phase Crystallization and High Speed Lateral Crystallization Induced by Micro-Thermal-Plasma-Jet Irradiation2010
- Author(s)
  S.Hayashi, S.Higashi, H.Murakami, S.Miyazaki
- Organizer
  17^<th> Int.Display Workshop (IDW'10)
- Place of Presentation
  Fukuoka, Japan
- Data Source
  KAKENHI-PROJECT-22360126
[Presentation] Millisecond Annealing Induced by Atmospheric Pressure Thermal Plasma Jet Irradiation and Its Application to Ultra Shallow Junction Formation [Invited]2010
- Author(s)
  S.Higashi
- Organizer
  2010 Int.Workshop Junction Tech. (IWJT-2010)
- Place of Presentation
  Shanghai, China(招待講演)
- Data Source
  KAKENHI-PROJECT-22360126
[Presentation] Millisecond Annealing Induced by Atmospheric Pressure Thermal Plasma Jet Irradiation and Its Application to Ultra Shallow Junction Formation2010
- Author(s)
  S. Higashi
- Organizer
  Ext. Abs. 2010 Int. Workshop Junction Tech. (IWJT-2010)
- Place of Presentation
  Shanghai, China(Invited)
- Data Source
  KAKENHI-PROJECT-19360187
[Presentation] Efficient Activation of As Atoms in Ultra Shallow Junction by Thermal Plasma Jet Induced Microsecond Annealing2010
- Author(s)
  K.Matsumoto, S.Higashi, A.Ohta, H.Murakami, S.Miyazaki
- Organizer
  Int.Symp.Dry Process (DPS 2010)
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-22360126
[Presentation] High Speed Lateral Crystallization of Amorphous Silicon Films Using Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor2010
- Author(s)
  S.Hayashi, S.Higashi, H.Murakami, S.Miyazaki
- Organizer
  2010 Int.Conf Solid Sate Dev.Mat.(SSDM)
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-22360126
[Presentation] Growth of Large Crystalline Grains by High Speed Scanning of Melting Zone Formed by Micro-Thermal-Plasma-Jet Irradiation to Amorphous Silicon Films2010
- Author(s)
  S.Hayashi, S.Higashi, S.Miyazaki
- Organizer
  2010 Material Research Society Spring Meeting
- Place of Presentation
  San Francisco, U.S.A.
- Data Source
  KAKENHI-PROJECT-22360126
[Presentation] 大気圧熱プラズマジェットを用いたシリコン膜のマイクロ秒溶融結晶化と高性能TFT作製応用2010
- Author(s)
  東清一郎
- Organizer
  電子情報通信学会技術研究報告シリコン材料・デバイス
- Place of Presentation
  沖縄青年会館
- Year and Date
  2010-04-23
- Data Source
  KAKENHI-PROJECT-19360187
[Presentation] 結晶化・相変化への応用熱プラズマジェットによるアモルファスシリコンの結晶化2009
- Author(s)
  東清一郎
- Organizer
  第31回真空展VACUUM2009併設真空トピックス, 日本真空協会9月研究例会, スパッタリングおよびプラズマプロセス技術部会第115回定例研究会
- Place of Presentation
  東京ビッグサイトSputtering & Plasma Processes
- Year and Date
  2009-09-16
- Data Source
  KAKENHI-PROJECT-19360187
[Presentation] Characterization of Microcrystalline Silicon Thin Film Transistors Fabricated by Thermal Plasma Jet Crystallization Technique2009
- Author(s)
  K. Sugakawa, S. Higashi, H. Kaku, T. Okada, S. Miyazaki
- Organizer
  Proc. AM-FPD 09
- Place of Presentation
  Nara, Japan
- Data Source
  KAKENHI-PROJECT-19360187
[Presentation] Si量子ドット/NiSiナノドットハイブリッド積層FG-MOS構造における光誘起電荷移動2009
- Author(s)
  森澤直也、池田弥央、中西翔、川浪彰、牧原克典、東清一郎、宮崎誠一
- Organizer
  第70回秋季応用物理学会
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] 熱プラズマジェットによるミリ秒急速熱処理とその半導体プロセス応用2009
- Author(s)
  東清一郎
- Organizer
  第44回応用物理学会スクール「安価、簡単、便利～大気圧プラズマの基礎と応用～」
- Place of Presentation
  筑波大学
- Year and Date
  2009-04-01
- Data Source
  KAKENHI-PROJECT-19360187
[Presentation] NiSiナノドット/Si量子ドット積層ハイブリッドフローティングゲートにおける電荷注入・放出特性2009
- Author(s)
  中西翔、池田弥央、森澤直也、牧原克典、川浪彰、東清一郎、宮崎誠一
- Organizer
  第70回秋季応用物理学会
- Place of Presentation
  富山大学
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] 結晶化・相変化への応用熱プラズマジェットによるアモルファスシリコンの結晶化2009
- Author(s)
  東清一郎
- Organizer
  日本真空協会9月研究例会, スパッタリングおよびプラズマプロセス技術部会第115回定例研究会
- Place of Presentation
  東京ビッグサイト
- Year and Date
  2009-09-16
- Data Source
  KAKENHI-PROJECT-19360187
[Presentation] Activation of B and As in Ultra Shallow Junction with Heating and Cooling Rates Controlled Millisecond Annealing Induced by Thermal Plasma Jet2009
- Author(s)
  K. Matsumoto, S. Higashi, H. Furukawa, T. Okada, H. Murakami, S. Miyazaki
- Organizer
  Ext. Abs. 2009 Int. Conf. Solid Sate Dev. Mat
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-19360187
[Presentation] Impact of Remote Plasma Treatment on Formation of Metal Nanodots on Ultrathin SiO22009
- Author(s)
  A. Kawanami, K. Shimanoe, K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  The 2nd International Conference on Plasma-Nano Technology & Science
- Place of Presentation
  Nagoya
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Millisecond Thermal Processing for TFT and ULSI [Invited]2009
- Author(s)
  東清一郎
- Organizer
  Semiconductor Tech. for Ultra Large Scale Integrated Circuits and Thin Film Transistors II
- Place of Presentation
  Xi'an, China
- Year and Date
  2009-07-05
- Data Source
  KAKENHI-PROJECT-19360187
[Presentation] Impact of Remote Plasma Treatment on Formation of Metal Nanodots on Ultrathin SiO22009
- Author(s)
  A. Kawanami, K. Shimanoe, K. Makihara, M. Ikeda, S. Higashi, s. Miyazaki
- Organizer
  The 2nd International Conference on Plasma-Nano Technology & Science
- Place of Presentation
  Nagoya
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] 熱プラズマジエットによるミリ秒急速熱処理とその半導体プロセス応用(第44回応用物理学会スクール「安価、簡単、便利〜大気圧プラズマの基礎と応用〜」)2009
- Author(s)
  東清一郎
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Data Source
  KAKENHI-PROJECT-19360187
[Presentation] Millisecond Thermal Processing for TFT and ULSI2009
- Author(s)
  S. Higashi
- Organizer
  Semiconductor Tech. for Ultra Large Scale Integrated Circuits and Thin Film Transistors II
- Place of Presentation
  Xi'an, China(Invited)
- Data Source
  KAKENHI-PROJECT-19360187
[Presentation] Metal Nanodots Formation Induced by Remote Plasma Treatment-Comparison between the effects of H2 and rare gas plasmas-2008
- Author(s)
  K. Shimanoe, K. Makihara, M. Ikeda, S. Higashi, S. Miyazaki
- Organizer
  International Union Material Research Societv (IUMRS) - International Conference in Asia
- Place of Presentation
  Nagoya
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Formation of Ultra High Density Si-based Quantum Dots on Ultrathin SiO22008
- Author(s)
  K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  4th International Workshop in New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS Memories2008
- Author(s)
  K. Shimanoe, K. Makihara, M. Ikeda, R. Matsumoto, S. Higashi, s. Miyazaki
- Organizer
  2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Hokkaido
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Generation of High Density Thermal Plasma Jet and Its Application to Millisecond Annealing of Si Wafer Surface for Shallow Junction Formation2008
- Author(s)
  H. Furukawa, S. Higashi, T. Okada, H. Murakami, S. Miyazaki
- Organizer
  Proc. Int. Symp. Dry Process
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-19360187
[Presentation] Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique2008
- Author(s)
  K. Makihara, K. Shimanoe, M. Ikeda, A. Ohta, S. Higashi and S. Miyazaki
- Organizer
  International Union Material Research Society (IUMRS)-International Conference in Asia
- Place of Presentation
  Nagoya
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] In-situ Monitoring of Si Wafer Temperature during Millisecond Rapid Thermal Annealing2008
- Author(s)
  H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, S. Miyazaki
- Organizer
  213th Electrochemical Society (ECS) Meeting Abs
- Place of Presentation
  Phoenix, USA
- Data Source
  KAKENHI-PROJECT-19360187
[Presentation] Characterization of Chemical Bonding Features and Electronic States of Ni-Silicide Nanodots Formed by a Remote H2-P1asma Assisted Technique2008
- Author(s)
  K. Makihara, A. Ohta, R. Matsumoto, M. Ikeda, K. Shimanoe, s. Higashi, s. Miyazaki
- Organizer
  The 4th Vacuum and Surface Sciences Conference of Asia and Australia
- Place of Presentation
  Matsue
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS Memories2008
- Author(s)
  K. Shimanoe, K. Makihara, M. Ikeda, R. Matsumoto, S. Higashi and S. Mivazaki
- Organizer
  2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Hokkaido
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Selective Growth of Self-Assembling Si and SiGe Quantum Dots2008
- Author(s)
  K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  4th International SiGe Technology and Device Meeting
- Place of Presentation
  Hsinchu, Taiwan
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Millisecond Rapid Thermal Annealing of Si Wafer Induced by High Density Thermal Plasma Jet Irradiation2008
- Author(s)
  H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, S. Miyazaki
- Organizer
  Ext. Abs. 2008 Int. Conf. Solid Sate Dev. Mat
- Place of Presentation
  Tsukuba, Japan
- Data Source
  KAKENHI-PROJECT-19360187
[Presentation] Impact of Annealing condition on the Efficiency of Dopant Activation Induced by Thermal Plasma Jet Crystallization of Heavily-Phosphorus-Doped Amorphous Si films2008
- Author(s)
  H. Kaku, S. Higashi, H. Furukawa, T. Okada, T. Yorimoto, H. Murakami, S. Miyazaki
- Organizer
  1st Int. Conf. on Plasma-NanoTechnology and Science (IC-PLANTS 2008)
- Place of Presentation
  Nagoya, Japan
- Data Source
  KAKENHI-PROJECT-19360187
[Presentation] Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO22008
- Author(s)
  K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  214th Electrochemical Society (ECS) Meet ing : SiGe & Ge Materials, Processing, and Device Symposium
- Place of Presentation
  Honolulu, USA
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Fonnation of Ultra High Density Si-based Quantum Dots on Ultrathin SiO22008
- Author(s)
  K. Makihara, A. Kawanami, M. Ikeda, s. Higashi, S. Miyazaki
- Organizer
  4th International Workshop in New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO22008
- Author(s)
  K. Makihara, A. Kawanami, M. Ikeda, s. Higashi, S. Miyazaki
- Organizer
  214th Electrochemical Society (ECS) Meeting : SiGe & Ge Materials, Processing, and Device Symposium
- Place of Presentation
  Honolulu, USA
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Formation of Source and Drain for Polycrystalline Si Thin Film Transistors Using Thermal Plasma Jet Induced Impurity Activation2008
- Author(s)
  H. Kaku, S. Higashi, T. Yorimoto, T. Okada, H. Furukawa, H. Murakami, S. Miyazaki
- Organizer
  Proc. 4th Int. TFT Conf
- Place of Presentation
  Seoul, Korea
- Data Source
  KAKENHI-PROJECT-19360187
[Presentation] Metal Nanodots Formation Induced by Remote Plasma Treatment-Comparison between the effects of H2 and rare gas plasmas-2008
- Author(s)
  K. Shimanoe, K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  International Union Material Research Society (IUMRS)-International Conference in Asia
- Place of Presentation
  Nagoya
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Selective Growth of Self-Assembling Si and SiGe Quantum Dots2008
- Author(s)
  K. Makihara, A. Kawanami, M. Ikeda, S. Higashi, S. Miyazaki
- Organizer
  4th International SiGe Technology and Device Meeting
- Place of Presentation
  Hsinchu, Taiwan
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Application of Thermal Plasma Jet Annealing to Channel Crystallization and Doping for Thin Film Transistor Fabrication2008
- Author(s)
  H. Kaku, S. Higashi, T. Yorimoto, T. Okada, H. Furukawa, S. Miyazaki
- Organizer
  Dig. Tech. Pap. AM-FPD 08
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-19360187
[Presentation] Characterization of Chemical Bonding Features and Electronic States of Ni-Silicide Nanodots Formed by a Remote H2-P1 asma Assisted Technique2008
- Author(s)
  K. Makihara, A. Ohta, R. Matsumoto, M. Ikeda, K. Shimanoe, S. Higashi and S. Miyazaki
- Organizer
  The 4th Vacuum and Surface Sciences Conference of Asia and Australia
- Place of Presentation
  Matsue
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique2008
- Author(s)
  K. Makihara, K. Shimanoe, M. Ikeda, A. Ohta, S. Higashi, s. Miyazaki
- Organizer
  International Union Material Research Society (IUMRS) - International Conference in Asia
- Place of Presentation
  Nagoya
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] 熱プラズマジェットを用いたミリ秒急速熱処理技術のTFT作製プロセス応用2007
- Author(s)
  東清一郎
- Organizer
  半導体界面制御技術第154委員会第58回研究会資料
- Place of Presentation
  首都大学東京
- Year and Date
  2007-05-16
- Data Source
  KAKENHI-PROJECT-19360187
[Presentation] Characterization of Electronic Charged States of Nickel Sikicide Nanodots Using AFM/Kelvm Probe Technique2007
- Author(s)
  R. Nishihara, K. Maldhara, Y. Kawaguchi. M. Dceda, H, Murakami, S. Higashi, S. Miyaziki
- Organizer
  The Sixth Pacific Rim International Conference on Advaneed Materials and Processing
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Charge Injection Characteristics of NiSi-Dots/Silicon-Quantum-Dots Stacked Floating Gate in MOS Capacitors2007
- Author(s)
  M. Ikeda, R. Matsumoto, K. Shimanoe, T. Okada, K. Makihara, S. Higashi, S. Miyazaki
- Organizer
  3nd International Workshop in New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] "Poly-Si TFT新たなSi膜結晶化法(熱プラズマジェット法)"シンポジウム「Poly-Si TFT最近の展開と今後」2007
- Author(s)
  東清一郎
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-19360187
[Presentation] Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging Characteristics2007
- Author(s)
  K. Makihara, M. Dceda, S. Higashi, S. Miyazaki
- Organizer
  5th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Marseille, France
- Year and Date
  2007-05-20
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Electroluminescence from Multiple-Stacked Structures of Impurity Doped Si Quantum Dots2007
- Author(s)
  K. Okuyama, K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  2007 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tukuba
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Impact ofBoron Doping to Si Quaatum Dots on Light Emission Properties2007
- Author(s)
  K. Okuyama, K・ Makihara, A.Ohta, H. Murakami, M. Ikeda, S. Higashi, S. Miyazaki
- Organizer
  2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Gyeongju, Korea
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] In-situ Measurement of Temperature Variation in Si Wafer During Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation2007
- Author(s)
  H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami, S. Miyazaki
- Organizer
  Ext. Abs. 2007 Int. Conf. Solid Sate Dev. Mat
- Place of Presentation
  Tsukuba, Japan
- Data Source
  KAKENHI-PROJECT-19360187
[Presentation] Impact of Boron Doping to Si Quantum Dots on Light Emission Properties2007
- Author(s)
  K. Okuyama, K. Makihara, A. Ohta, H. Murakami, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Gyeongju, Korea
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging Characteristics2007
- Author(s)
  K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  5th International Conference on Silicon Epitaxy and Heterostructures
- Place of Presentation
  Marseille, France
- Year and Date
  2007-05-20
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Luminescence Study of Multiply-Stacked Structures Consisting of Impurity-Doped Si Quantum Dots and Ultrathin SiO_22007
- Author(s)
  K. Makihara, Y. Kawaguchi, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  The 2007 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Osaka
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Luminescence Study of Multiply-Stacked Structures Consisting of Impurity-Doped Si Quantum Dots and Ultrathin SiO_22007
- Author(s)
  K. Makihara, Y. Kawaguchi, M. Deeda.S. Higashi, S. Miyazaki
- Organizer
  The 2007 International Meeting for Future of Electron Devices, Kansai
- Place of Presentation
  Osaka
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Characterization of Electronic Charged States of Nickel Sikicide Nanodots Using AFM/Kelvin Probe Technique2007
- Author(s)
  R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki
- Organizer
  The Sixth Pacific Rim International Conference on Advanced Materials and Processing
- Place of Presentation
  Jeju, Korea
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Poly-Si TFT新たなSi膜結晶化法(熱プラズマジェット法)2007
- Author(s)
  東清一郎
- Organizer
  第68回応用物理学会学術講演会(シンポジウム)
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-19360187
[Presentation] Self-Assembling Formation of Ninanodots on SiO_2 Induced by Remote H_2-Plasma Treatment and Their Electrical Charging Characteristics2007
- Author(s)
  K. Makihara, K. Shimanoe, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  2007 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tukuba
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Formation of PtSi Nanodots Induced by Remote H_2 Plasma2007
- Author(s)
  K. Simanoe, K. Makihara, A. Ohta, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  3nd International Workshop in New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai
- Year and Date
  2007-11-09
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Phosphorus Doping to Si Quantum Dots for Floating Gate Application2007
- Author(s)
  K. Makihara, M. Ikeda, A. Ohta, H. Murakami, R. Matsumoto, E. Ikenaga, M. Kobata, J. Kim, S. Higashi and S. Miyazaki
- Organizer
  2007 Silicon Nanoelectronics Workshop
- Place of Presentation
  Kyoto
- Year and Date
  2007-06-11
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Dopant Activation Induced by Thermal Plasma Jet Crystallization of Heavily-Phosphorus-Doped Amorphous Si Films2007
- Author(s)
  H. Kaku, S. Higashi, H. Furukawa, T. Okada, H. Murakami, S. Miyazaki
- Organizer
  Dig. Tech. Pap. AM-FPD 07
- Place of Presentation
  Hyogo, Japan
- Data Source
  KAKENHI-PROJECT-19360187
[Presentation] Charge Injection Characteristics of NiSi-Dots/Silicon-Quantum-Dots Stacked Floating Gate in MOS Capacitors2007
- Author(s)
  M. Ikeda, R. Matsumoto, K. Shimanoe, T. Okada, K. Makihara, S. Higashi and S. Miyazaki
- Organizer
  3nd International Workshop in New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  Sendai
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] 熱プラズマジェットを用いたミリ秒急速熱処理技術のTFT作製プロセス応用(招待講演)2007
- Author(s)
  東清一郎
- Organizer
  半導体界面制御技術第154委員会第58回研究会
- Place of Presentation
  首都大学東京
- Year and Date
  2007-05-16
- Data Source
  KAKENHI-PROJECT-19360187
[Presentation] Formation of PtSi Nanodots Induced by Remote H_2 Plasma2007
- Author(s)
  K. Simanone, K. Makihara, A. Ohta, M. Ikeda, S. Higashi, S. Miyazaki
- Organizer
  3nd International Workshop in New Group IV Semicond uctor Nanoelectronics
- Place of Presentation
  Sendai
- Year and Date
  2007-11-09
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Characterization of Multistep Electron Charging and Discharging of Silicon-Quantum-Dots Floating Gate by Applying Pulsed Gate Biases2007
- Author(s)
  R. Matsumoto, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  2007 International Conference on Solid State Devices and Materials
- Place of Presentation
  Tukuba
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Formation of Ni Nanodots Induced by Remote Hydrogen Plasma2007
- Author(s)
  K. Makihara, K, Shimanoe, Y. Kawaguchi, M. Dceda, S. Higashi, S.Miyazaki
- Organizer
  The European Materials Research Society 2007 Spring Meeting
- Place of Presentation
  Strasbourg, France
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Application of Thermal Plasma Jet to Crystallization of Amorphous Si Films on Glass Substrate and Thin Film Transistor Fabrication2007
- Author(s)
  S. Higashi
- Organizer
  6th Asian-European Int. Conf. Plasma Surf. Eng. (AEPSE 2007) Workshop on Flat-panel and Flexible Devices
- Place of Presentation
  Nagasaki, Japan
- Year and Date
  2007-09-28
- Data Source
  KAKENHI-PROJECT-19360187
[Presentation] Formation of Ni Nanodots Induced by Remote Hydrogen Plasma2007
- Author(s)
  K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  The European Materials Research Society 2007 Spring Meeting
- Place of Presentation
  Strasbourg, France
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO_2 Structure as Evaluated by AFM/KFM2007
- Author(s)
  K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki
- Organizer
  2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  Gyeongju, Korea
- Data Source
  KAKENHI-PROJECT-18206035
[Presentation] High Efficiency Dopant Activation Induced by Thermal Plasma Jet Crystallization of Heavily-Phosphorus-Doped Amorphous Si Films2007
- Author(s)
  H. Kaku, S. Higashi, H. Furukawa, T. Okada, T. Yorimoto, H. Murakami, S. Miyazaki
- Organizer
  Ext. Abs. 5th Int. Symp. Control of Semiconductor Interfaces (ISCSI-V)
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-19360187
[Presentation] High Efficiency Activation of Phosphorus Atoms Induced by Thermal Plasma Jet Crystallization of Doped Amorphous Si Films2007
- Author(s)
  H. Kaku, S. Higashi, T. Okada, T. Yorimoto, H. Murakami, S. Miyazaki
- Organizer
  Abst. 2007 Material Research Society Spring Meeting
- Place of Presentation
  San Francisco, U.S. A
- Data Source
  KAKENHI-PROJECT-19360187
[Presentation] Phosphoras Doping to Si Quantum Dots for Floating Gate Application2007
- Author(s)
  K. Makihara, M. Ikeda, A. Ohta, H. Murakami. R, Matsumoto, E. Ikenaga, M. Kobata, J. Kim S. Higashi, S. Miyazaki
- Organizer
  2007 Silicon Nanoelectronics Workshop
- Place of Presentation
  Kyoto
- Year and Date
  2007-06-11
- Data Source
  KAKENHI-PROJECT-18063017
[Presentation] Application of Thermal Plasma Jet to Crystallization of Amorphous Si Films on Glass Substrate and Thin Film Transistor Fabrication (invited)2007
- Author(s)
  S. Higashi
- Organizer
  6th Asian-European Int. Conf. Plasma Surf. Eng. (AEPSE 2007)
- Place of Presentation
  Nagasaki, Japan
- Year and Date
  2007-09-28
- Data Source
  KAKENHI-PROJECT-19360187

1. MIYAZAKI Seiichi (70190759)

# of Collaborated Projects: 5 results

# of Collaborated Products: 88 results
2. MURAKAMI Hideki (70314739)

# of Collaborated Projects: 5 results

# of Collaborated Products: 33 results
3. KOHNO Atsushi (30284160)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Higashi Seiichiro 東 清一郎

HIGASHI Seiichiro 東 清一郎

Research Projects

Research Products

Co-Researchers

光学干渉非接触温度計測法によるデバイス自己発熱過程のイメージング技術に関する研究Principal Investigator

Principal Investigator

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Review Section

Research Institution

Atmospheric pressure thermal plasma jet generation by MEMS integrationPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of single-crystalline silicon CMOS technology on flexible substrate by atomospheric pressure thermal plasma jet crystallizetionPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

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Study on Hetero Integration Technology of Devices on Flexible SubstratePrincipal Investigator

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マイクロ熱プラズマジェット照射による四族半導体単結晶ナノ薄膜成長Principal Investigator

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Control of Electronic Properties of One-Dimensionally Self-Aligned Si-Ge based Quantum Dots and Its Electroluminescence

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Noncontact Temperature Measurement During Rapid Thermal Annealing and Investigation on Impurity ActivationPrincipal Investigator

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Integration of silicon-based nano-scalestructure and its functional memory device application

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シリコン系スーパーアトム構造の高密度集積と新機能材料創成

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PN制御シリコン系ナノ結晶集積構造におけるキャリア輸送とエレクトロルミネッセンス

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The fabrication of super atom structure using Si based self-assembled quantum dots and its electron state control

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[Book] プラズマ・核融合学会誌(熱プラズマによるアモルファスシリコンの結晶化:講座熱流を伴う反応性プラズマを用いた材料合成プロセス3. 結晶化・相変化制御への応用, vol.85,No.3)2009

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[Book] 薄膜トランジスタ(薄膜材料デバイス研究会編)2008

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[Journal Article] Development of a real-time temperature measurement technique for SiC wafer during ultra-rapid thermal annealing based on optical-interference contactless thermometry (OICT)2023

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Higashi Seiichiro 東清一郎

HIGASHI Seiichiro 東清一郎