Sueoka Koji 末岡浩治

Researcher Number	30364095
Affiliation (Current)	2025: 岡山県立大学, 情報工学部, 教授
Affiliation (based on the past Project Information) *help	2013 – 2021: 岡山県立大学, 情報工学部, 教授
Review Section/Research Field	Principal Investigator Crystal engineering / Basic Section 30010:Crystal engineering-related
Keywords	Principal Investigator 半導体 / 第一原理計算 / シリコン単結晶 / 材料系残 / パワーデバイス用半導体 / 計算手法 / 欠陥制御 / パワーデバイス / 熱統計力学 / 大口径シリコン結晶 … More / パワーデバイス用シリコン / 太陽電池 / 材料物性値 / 原子配置 / IV族半導体 / 統計熱力学 / 大口径化 / 熱応力 / 点欠陥 Less

Development of calculation technique for defect control in semiconductors for power device applicationPrincipal Investigator
- Principal Investigator
  
  Sueoka Koji
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Okayama Prefectural University
Development of calculation method for physical properties based on the possible atomic configurations and its application to the IV group semiconductor materialsPrincipal Investigator
- Principal Investigator
  
  Sueoka Koji
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Crystal engineering
- Research Institution
  Okayama Prefectural University
Basic research for precise control of intrinsic point defects in 450 mm diameter silicon crystal growthPrincipal Investigator
- Principal Investigator
  
  Sueoka Koji
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Crystal engineering
- Research Institution
  Okayama Prefectural University

All 2021 2020 2019 2018 2017 2016 2015 2014 2013 Other

All Journal Article Presentation Book

[Book] シリコン結晶技術 -成長・加工・欠陥制御・評価-2015
- Author(s)
  末岡浩治（分担執筆）
- Total Pages
  470
- Publisher
  日本学術振興会第145委員会
- Data Source
  KAKENHI-PROJECT-25390069
[Book] Defects and Impurities in Silicon Materials2015
- Author(s)
  Jan Vanhellemont, Kozo Nakamura, Eiji Kamiyama, and Koji Sueoka
- Total Pages
  59
- Publisher
  Springer
- Data Source
  KAKENHI-PROJECT-25390069
[Book] Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities and Nanocrystals2014
- Author(s)
  Koji Sueoka（分担執筆）
- Total Pages
  431
- Publisher
  CRC Press
- Data Source
  KAKENHI-PROJECT-25390069
[Book] Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals （分担執筆）2014
- Author(s)
  Eiji Kamiyama, Jan Vanhellemont and Koji Sueoka
- Publisher
  CRC Press, a Taylor & Francis Company
- Data Source
  KAKENHI-PROJECT-25390069
[Journal Article] Density functional theory study on concentration of intrinsic point defects in growing N-doped Czochralski Si crystal2021
- Author(s)
  Taniguchi Motoharu、Sueoka Koji、Hourai Masataka
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 571 Pages: 126249-126249
- DOI
  10.1016/j.jcrysgro.2021.126249
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05294
[Journal Article] Theoretical study of stress impact on formation enthalpy and thermal equilibrium concentration of impurities and dopants in Si single crystal2021
- Author(s)
  Iwashiro Hiroya、Sueoka Koji、Torigoe Kazuhisa、Ono Toshiaki
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 572 Pages: 126284-126284
- DOI
  10.1016/j.jcrysgro.2021.126284
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05294
[Journal Article] Theoretical study of hydrogen impact on concentration of intrinsic point defects during Czochralski Si crystal growth2021
- Author(s)
  Kusunoki Takuya、Sueoka Koji、Sugimura Wataru、Hourai Masataka
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 555 Pages: 125971-125971
- DOI
  10.1016/j.jcrysgro.2020.125971
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05294
[Journal Article] Prediction of O Aggregation in Straight Line at High Temperature in Si Crystals: Thermal Donors Attaching to an Oxide Precipitate Surface2020
- Author(s)
  Kamiyama Eiji、Sueoka Koji
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 9 Issue: 5 Pages: 054003-054003
- DOI
  10.1149/2162-8777/ab951c
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05294
[Journal Article] Unsteady numerical simulations considering effects of thermal stress and heavy doping on the behavior of intrinsic point defects in large-diameter Si crystal growing by Czochralski method2020
- Author(s)
  Mukaiyama Yuji、Sueoka Koji、Maeda Susumu、Iizuka Masaya、Mamedov Vasif M.
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 532 Pages: 125433-125433
- DOI
  10.1016/j.jcrysgro.2019.125433
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05294
[Journal Article] Numerical analysis of effect of thermal stress depending on pulling rate on behavior of intrinsic point defects in large-diameter Si crystal grown by Czochralski method2020
- Author(s)
  Mukaiyama Yuji、Sueoka Koji、Maeda Susumu、Iizuka Masaya、Mamedov Vasif M.
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 531 Pages: 125334-125334
- DOI
  10.1016/j.jcrysgro.2019.125334
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05294
[Journal Article] Theoretical study on Frenkel pair formation and recombination in single crystal silicon2019
- Author(s)
  Sueoka Koji、Fukuda Hiroaki
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 520 Pages: 1-10
- DOI
  10.1016/j.jcrysgro.2019.05.014
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05294
[Journal Article] Density Functional Theory Study on Stability of Fe, Cu, and Ni Atoms Near (001) Surface of Si Wafer2019
- Author(s)
  Nonoda Noriyuki、Sueoka Koji
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 8 Issue: 10 Pages: P573-P579
- DOI
  10.1149/2.0111910jss
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05294
[Journal Article] Density Functional Theory Study on Defect Behavior Related to the Bulk Lifetime of Silicon Crystals for Power Device Application2019
- Author(s)
  Tsuchiya Daiki、Sueoka Koji、Yamamoto Hidekazu
- Journal Title
  
  physica status solidi (a)
  
  Volume: 2019 Issue: 10 Pages: 1800615-1800615
- DOI
  10.1002/pssa.201800615
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K04950
[Journal Article] Effect of Oxygen Precipitation in Silicon Wafer on Electrical Characteristics of Fully Ion-Implanted n-Type PERT Solar Cells2019
- Author(s)
  Tanahashi Katsuto、Tachibana Tomihisa、Sueoka Koji、Moriya Masaaki、Kida Yasuhiro、Ustunomiya Satoshi、Shirasawa Katsuhiko、Takato Hidetaka
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 8 Issue: 10 Pages: P596-P601
- DOI
  10.1149/2.0191910jss
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K05294
[Journal Article] Computer Simulation of Concentration Distribution of Intrinsic Point Defect Valid for All Pulling Conditions in Large-Diameter Czochralski Si Crystal Growth2019
- Author(s)
  Koji Sueoka, Yuji Mukaiyama, Susumu Maeda, Masaya Iizuka, and Vasif Mamedov
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 8 Issue: 4 Pages: P228-P238
- DOI
  10.1149/2.0011904jss
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04950, KAKENHI-PROJECT-19K05294
[Journal Article] Point Defect Reaction in Silicon Wafers by Rapid Thermal Processing at More Than 1300°C Using an Oxidation Ambient2019
- Author(s)
  Sudo Haruo、Nakamura Kozo、Maeda Susumu、Okamura Hideyuki、Izunome Koji、Sueoka Koji
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 8 Issue: 1 Pages: P35-P40
- DOI
  10.1149/2.0121901jss
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K04950
[Journal Article] First principles analysis on the stability of C, Sn atoms near the surface of Ge thin film2018
- Author(s)
  只野快，末岡浩治
- Journal Title
  
  Transactions of the JSME (in Japanese)
  
  Volume: 84 Issue: 858 Pages: 17-00542-17-00542
- DOI
  10.1299/transjsme.17-00542
- NAID
  130006401867
- ISSN
  2187-9761
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K04950
[Journal Article] Gettering Sinks for Metallic Impurities Formed by Carbon-Cluster Ion Implantation in Epitaxial Silicon Wafers for CMOS Image Sensor2018
- Author(s)
  Onaka-Masada Ayumi、Okuyama Ryosuke、Shigematsu Satoshi、Okuda Hidehiko、Kadono Takeshi、Hirose Ryo、Koga Yoshihiro、Sueoka Koji、Kurita Kazunari
- Journal Title
  
  IEEE Journal of the Electron Devices Society
  
  Volume: 6 Pages: 1200-1206
- DOI
  10.1109/jeds.2018.2872976
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K04950
[Journal Article] Stability of Excess Oxygen Atoms near Oxide Precipitate and Oxygen Solubility in Silicon Crystal2018
- Author(s)
  Eiji Kamiyama and Koji Sueoka
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 7 Issue: 3 Pages: P102-P108
- DOI
  10.1149/2.0101803jss
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K04950
[Journal Article] Gettering mechanism in hydrocarbon-molecular-ion-implanted epitaxial silicon wafers revealed by three-dimensional atom imaging2018
- Author(s)
  Onaka-Masada Ayumi、Okuyama Ryosuke、Nakai Toshiro、Shigematsu Satoshi、Okuda Hidehiko、Kobayashi Koji、Hirose Ryo、Kadono Takeshi、Koga Yoshihiro、Shinohara Masanori、Sueoka Koji、Kurita Kazunari
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 9 Pages: 091302-091302
- DOI
  10.7567/jjap.57.091302
- NAID
  210000149622
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K04950
[Journal Article] Density Functional Theory Study on Formation Energy and Diffusion Path of Metal Atom near Dopant in Si Crystals2017
- Author(s)
  Atsuhiro Yamada and Koji Sueoka
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 6 Issue: 4 Pages: P125-P131
- DOI
  10.1149/2.0131704jss
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K04950
[Journal Article] Density functional theory study of dopant effect on formation energy of intrinsic point defects in germanium crystals2017
- Author(s)
  S. Yamaoka, K. Kobayashi, K. Sueoka, J. Vanhellemont
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 印刷中
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04950
[Journal Article] Modeling of intrinsic point defect properties and clusteringduring single crystal silicon and germanium growth from a melt2017
- Author(s)
  Jan Vanhellemont, Eiji Kamiyama, Kozo Nakamura, Piotr Spiewak, Koji Sueoka
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 印刷中
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04950
[Journal Article] Theoretical study of the impact of stress and interstitial oxygen on the behavior of intrinsic point defects in growing Czochralski Si crystals2017
- Author(s)
  K. Sueoka, K. Nakamura, J. Vanhellemont
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 印刷中
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04950
[Journal Article] Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence by dopants -2017
- Author(s)
  K. Kobayashi, S. Yamaoka, K. Sueoka, J. Vanhellemont
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 印刷中
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04950
[Journal Article] Density Functional Theory Study of the Stress Impact on Formation Enthalpy of Intrinsic Point Defect around Dopant Atom in Ge Crystal2017
- Author(s)
  Shunta Yamaoka, Koji Kobayashi, and Koji Sueoka
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 6 Issue: 7 Pages: P383-P398
- DOI
  10.1149/2.0131707jss
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K04950
[Journal Article] Density functional theory study of stable configurations of substitutionaland interstitial C and Sn atoms in Si and Ge crystals2017
- Author(s)
  Hiroki Koyama, Koji Sueoka
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 463 Pages: 110-115
- DOI
  10.1016/j.jcrysgro.2017.01.054
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K04950
[Journal Article] First-principles calculation of atomic configurations of carbon and tin near the surface of a silicon thin film used for solar cells2017
- Author(s)
  Kai Tadano, Koji Sueoka
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 63 Pages: 45-51
- DOI
  10.1016/j.mssp.2017.01.021
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K04950
[Journal Article] Density Functional Theory Calculations of Atomic Configurations and Bandgaps of C-, Ge-, and Sn-Doped Si Crystals for Solar Cells2017
- Author(s)
  Kento Toyosaki and Koji Sueoka
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 6 Issue: 5 Pages: P326-P331
- DOI
  10.1149/2.0311705jss
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K04950
[Journal Article] Systematic Density Functional Theory Investigation of Stability of Dopant Atoms in Ge Ultra-Thin Film Grown on Si Substrate2017
- Author(s)
  Jun Inagakia and Koji Sueoka
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 6 Issue: 4 Pages: P154-P160
- DOI
  10.1149/2.0191704jss
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K04950
[Journal Article] Theoretical Study of Impact of Internal and External Stresses on Thermal Equilibrium Concentrations of Intrinsic Point Defects in Doped Si Crystals2017
- Author(s)
  Koji Kobayashi, Shunta Yamaoka, Koji Sueoka
- Journal Title
  
  ECS Journal of Solid State State Science and Technology
  
  Volume: 6 Issue: 1 Pages: P78-P99
- DOI
  10.1149/2.0261701jss
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K04950
[Journal Article] Density functional theory calculations for estimation of gettering sites of C, H, intrinsic point defects and related complexes in Si wafers2016
- Author(s)
  Sho Shirasawa, Koji Sueoka, Tadashi Yamaguchi, and Kazuyoshi Maekawa
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 44 Pages: 13-17
- DOI
  10.1016/j.mssp.2016.01.001
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25390069
[Journal Article] シリコン単結晶育成中の点欠陥挙動に与える置換型ドーパントと熱応力の効果2016
- Author(s)
  末岡　浩治
- Journal Title
  
  表面科学
  
  Volume: 37 Pages: 116-121
- NAID
  130005138636
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25390069
[Journal Article] The Hakoniwa method, an approach to predict material properties based on statistical thermodynamics and ab initio calculations2016
- Author(s)
  Eiji Kamiyama, Ryo Matsutani, Ryo Suwa, Jan Vanhellemont, and Koji Sueoka
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 43 Pages: 209-213
- DOI
  10.1016/j.mssp.2015.12.023
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25390069
[Journal Article] Comment on “Investigations of interstitial generations near growth interface depending on crystal pulling rates during CZ silicon growth by detaching from the melt” by T. Abe et al. [J. CrystGrowth 434 (2016) 128-137]2016
- Author(s)
  Jan Vanhellemont, Eiji Kamiyama, Kozo Nakamura, and Koji Sueoka
- Journal Title
  
  J. Crystal Growth
  
  Volume: 印刷中
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25390069
[Journal Article] Review: Properties of Intrinsic Point Defects in Si and Ge Assessed by Density Functional Theory2016
- Author(s)
  Koji Sueoka, Eiji Kamiyama, Piotr Spiewak, and Jan Vanhellemont
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 5 Issue: 4 Pages: P3176-P3195
- DOI
  10.1149/2.0251604jss
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25390069
[Journal Article] Estimation of the temperature dependent interaction between uncharged point defects in Si2015
- Author(s)
  Eiji Kamiyama, Koji Sueoka and Jan Vanhellemont
- Journal Title
  
  AIP Advances
  
  Volume: 5 Issue: 1
- DOI
  10.1063/1.4906565
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-25390069
[Journal Article] Comment on “Experimental Study of the Impact of Stress on thePoint Defect Incorporation during Silicon Growth” [ECS Solid State Lett., 3, N5 (2014)]2014
- Author(s)
  Jan Vanhellemont, Eiji Kamiyama and Koji Sueoka
- Journal Title
  
  ECS Solid State Letters
  
  Volume: 3 Issue: 5 Pages: X3-X4
- DOI
  10.1149/2.010404ssl
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-25390069
[Journal Article] Stress and doping impact on intrinsic point defect behavior in growing single crystal silicon2014
- Author(s)
  Koji Sueoka, Eiji Kamiyama, Jan Vanhellemont and Kozo Nakamura
- Journal Title
  
  Physica Status Solidi (b)
  
  Volume: 251 Issue: 11 Pages: 2159-2168
- DOI
  10.1002/pssb.201400022
- NAID
  110009971788
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25390069
[Journal Article] Impact of Plane Thermal Stress near the Melt/Solid Interface on the v/G Criterion for Defect-Free Large Diameter Single Crystal Si Growth2014
- Author(s)
  Koji Sueoka, Eiji Kamiyama, Jan Vanhellemont and Kozo Nakamura
- Journal Title
  
  ECS Solid State Letters
  
  Volume: 3 Issue: 6 Pages: P69-P72
- DOI
  10.1149/2.002406ssl
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-25390069
[Journal Article] Formation energy of intrinsic point defects in nanometer-thick Si and Ge foils and implications for Ge crystal growth from a melt2014
- Author(s)
  Eiji Kamiyama, Koji Sueoka and Jan Vanhellemont
- Journal Title
  
  Physica Status Solidi (c)
  
  Volume: 11 Issue: 1 Pages: 85-88
- DOI
  10.1002/pssc.201300112
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-25390069
[Journal Article] Thermal stress induced void formation during 450mm defect free silicon crystal growth and implications for wafer inspection2013
- Author(s)
  Eiji Kamiyama, Jan Vanhellemont, Koji Sueoka, Koji Araki and Koji Izunome
- Journal Title
  
  Applied Physics Letters
  
  Volume: 102 Issue: 8
- DOI
  10.1063/1.4793662
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25390069
[Journal Article] Silicon Single Crystal Growth from a Melt: On the Impact of Dopants on the v/G Criterion2013
- Author(s)
  Jan Vanhellemont, Eiji Kamiyama and Koji Sueoka
- Journal Title
  
  ECS Journal of Solid State Science and Technology
  
  Volume: 2 Issue: 4 Pages: 166-179
- DOI
  10.1149/2.024304jss
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25390069
[Journal Article] Density functional theory study on the impact of heavy doping on Si intrinsic point defect properties and implications for single crystal growth from a melt2013
- Author(s)
  Koji Sueoka, Eiji Kamiyama and Jan Vanhellemont
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 114 Issue: 15
- DOI
  10.1063/1.4825222
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25390069
[Journal Article] Theoretical study of the impact of stress on the behavior of intrinsic point defects in large-diameter defect-free Si crystals2013
- Author(s)
  Koji Sueoka, Eiji Kamiyama and Jan Vanhellemont
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 363 Pages: 97-104
- DOI
  10.1016/j.jcrysgro.2012.10.014
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25390069
[Presentation] First Principles Analysis on Intrinsic Point Defect Behavior during N Doped CZ-Si Crystal Growth2021
- Author(s)
  Motoharu Taniguchi, Koji Sueoka, Masataka Hourai
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05294
[Presentation] Theoretical Study of Stress Impact on Formation Enthalpy and Thermal Equilibrium Concentration of Metal Atoms in Si Single Crystal2021
- Author(s)
  Hiroya Iwashiro, Koji Sueoka, Kazuhisa Torigoe, Toshiaki Ono
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05294
[Presentation] First principles analysis of H impact on intrinsic point defect behavior in growing CZ-Si crystal2020
- Author(s)
  Takuya Kusunoki, Koji Sueoka, Wataru Sugimura, Masataka Hourai
- Organizer
  EMRS 2020 Spring meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05294
[Presentation] First principles analysis on intrinsic point defect behavior in growing CZ-Si crystal2020
- Author(s)
  Motoharu Taniguchi, Koji Sueoka, Masataka Hourai
- Organizer
  EMRS 2020 Spring meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05294
[Presentation] Density functional theory study on stability and diffusion barrier of metal atoms near the Si (001) surface2019
- Author(s)
  Nonoda Noriyuki、Sueoka Koji
- Organizer
  18th Conference of Gettering and Defect Engineering in Semiconductor Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05294
[Presentation] Influence of Carbon and Oxygen Impurities on Bulk Lifetime-Control Defects in Silicon Crystals for Power Device Application2019
- Author(s)
  Daiki Tsuchiya, Koji Sueoka, Hidekazu Yamamoto
- Organizer
  18th Conference of Gettering and Defect Engineering in Semiconductor Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05294
[Presentation] Computer simulation of intrinsic point defect distribution valid for all pulling conditions in large-diameter Czochralski Si crystal growth2019
- Author(s)
  Koji Sueoka
- Organizer
  18th Conference of Gettering and Defect Engineering in Semiconductor Technology
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19K05294
[Presentation] 大口径CZ-Si結晶育成における点欠陥挙動の数値シミュレーション2018
- Author(s)
  末岡浩治，向山裕次，前田進，飯塚将也，バシフマメドフ
- Organizer
  2018年秋季応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-16K04950
[Presentation] Si結晶育成中の点欠陥挙動に与えるドーパントと熱応力の影響2018
- Author(s)
  末岡浩治
- Organizer
  日本学術振興会第145委員会　第159回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-16K04950
[Presentation] 大口径CZ-Si結晶育成における点欠陥挙動の数値シミュレーション2018
- Author(s)
  末岡浩治，向山裕次，前田進，飯塚将也，バシフマメドフ
- Organizer
  第31回計算力学講演会（CMD2018）
- Data Source
  KAKENHI-PROJECT-16K04950
[Presentation] Si中のフレンケルペア形成・再結合過程に関する第一原理解析2018
- Author(s)
  末岡浩治
- Organizer
  2018年秋季応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-16K04950
[Presentation] 第一原理計算によるSi 結晶中のライフタイム制御欠陥の挙動解析2018
- Author(s)
  土屋大輝，末岡浩治，山本秀和
- Organizer
  パワーデバイス用シリコンおよび関連半導体材料に関する研究会（第6回）
- Invited
- Data Source
  KAKENHI-PROJECT-16K04950
[Presentation] First-principles analysis on the stability of interstitial metal atoms near the (001) surface of Si wafer2018
- Author(s)
  Noriyuki Nonoda and Koji Sueoka
- Organizer
  E-MRS 2018 Spring Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04950
[Presentation] First-principles analysis on Frenkel pair formation/annihilation in Si crystals2018
- Author(s)
  Hiroaki Fukuda and Koji Sueoka
- Organizer
  E-MRS 2018 Spring Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04950
[Presentation] Computer Simulation of Concentration Distribution of Intrinsic Point Defect Valid for All Pulling Conditions in Large-Diameter Czochralski Si Crystal Growth2018
- Author(s)
  Koji Sueoka, Yuji Mukaiyama, Susumu Maeda, Masaya Iizuka, and Vasif Mamedov
- Organizer
  ECS 2018 Fall Meeting (High Purity and High Mobility Semiconductors)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04950
[Presentation] Computer Simulation of Intrinsic Point Defect Behaviors Valid for All Pulling Conditions in Large-diameter Czochralski Si Crystal Growth2018
- Author(s)
  Koji Sueoka, Shunta Yamaoka, Susumu Maeda, Yuji Mukaiyama, Masaya Iizuka andVasif M. Mamedov
- Organizer
  ECS Fall Meeting 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04950
[Presentation] First-principles analysis of defect behavior related to the bulk lifetime of silicon crystals for power device application2018
- Author(s)
  Tsuchiya Daiki, Sueoka Koji, Yamamoto Hidekazu
- Organizer
  E-MRS 2018 Spring Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04950
[Presentation] First-principles analysis on Frenkel pair formation/annihilation in Si crystals2018
- Author(s)
  Hiroaki Fukuda and Koji Sueoka
- Organizer
  E-MRS Spring Meeting 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04950
[Presentation] IV族混晶系半導体中の原子配置に関する第一原理解析2017
- Author(s)
  小山広貴，末岡浩治
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K04950
[Presentation] Si単結晶中のフレンケルペア形成に関する第一原理解析2017
- Author(s)
  福田大晃，末岡浩治
- Organizer
  日本機械学会第 30 回計算力学講演会(CMD2017)
- Data Source
  KAKENHI-PROJECT-16K04950
[Presentation] 太陽電池用IV族混晶系半導体中の原子配置に関する第一原理解析2017
- Author(s)
  小山広貴，末岡浩治
- Organizer
  日本機械学会第 30 回計算力学講演会(CMD2017)
- Data Source
  KAKENHI-PROJECT-16K04950
[Presentation] Si基板の開発に資する第一原理計算～点欠陥の制御と不純物ゲッタリング～2017
- Author(s)
  末岡浩治
- Organizer
  電気化学会
- Place of Presentation
  首都大学東京
- Year and Date
  2017-03-25
- Invited
- Data Source
  KAKENHI-PROJECT-16K04950
[Presentation] Si薄膜表面近傍におけるCとSnの原子配置および熱平衡濃度に関する第一原理解析2017
- Author(s)
  只野快，末岡浩治
- Organizer
  日本機械学会第 30 回計算力学講演会(CMD2017)
- Data Source
  KAKENHI-PROJECT-16K04950
[Presentation] ゲッタリング技術開発に資する数値シミュレーション2017
- Author(s)
  末岡浩治
- Organizer
  第78回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-16K04950
[Presentation] Si単結晶育成時の熱応力の異方性が二次欠陥挙動に与える影響2017
- Author(s)
  神山栄治，末岡浩治
- Organizer
  日本機械学会第 30 回計算力学講演会(CMD2017)
- Data Source
  KAKENHI-PROJECT-16K04950
[Presentation] GeSnC系薄膜の表面近傍におけるCとSn原子の形成エネルギーと熱平衡濃度の算出2017
- Author(s)
  只野快，末岡浩治
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K04950
[Presentation] First Principles Analysis on Frenkel Pair Formation from Oxygen Clusters in Si2016
- Author(s)
  H. Fukuda, K. Sueoka
- Organizer
  The 7th International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Kona, USA
- Year and Date
  2016-11-21
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04950
[Presentation] 高品位Si，Ge基板の開発に資する第一原理計算～大口径結晶成長中の点欠陥制御から基板熱処理中の不純物ゲッタリングまで～2016
- Author(s)
  末岡浩治
- Organizer
  電子情報通信学会
- Place of Presentation
  機械振興会館
- Invited
- Data Source
  KAKENHI-PROJECT-16K04950
[Presentation] Density Functional Theory Study on Formation Energy and Diffusion Path of2016
- Author(s)
  A. Yamada, K. Sueoka
- Organizer
  The 7th International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Kona, USA
- Year and Date
  2016-11-21
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04950
[Presentation] Unified Model for the Impact of Thermal Stress and Doping on the Formation of Intrinsic Point Defects in Growing Si Crystal2016
- Author(s)
  K. Kobayashi, S. Yamaoka, K. Sueoka
- Organizer
  The 7th International Symposium on Advanced Science and Technology of Silicon Materials
- Place of Presentation
  Kona, USA
- Year and Date
  2016-11-21
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K04950
[Presentation] Theoretical study of the impact of stress and interstitial oxygen on the behavior of intrinsic point defects in growing Czochralski Si crystals2015
- Author(s)
  Koji Sueoka, Kozo Nakamura, and Jan Vanhellemont
- Organizer
  The 8th International Workshop on Modeling in Crystal Growth (IWMCG-8)
- Place of Presentation
  Spa, Belgium
- Year and Date
  2015-11-15
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25390069
[Presentation] Modeling of intrinsic point defect properties and clustering during single crystal silicon and germanium growth from a melt2015
- Author(s)
  Jan Vanhellemont, Eiji Kamiyama, Kozo Nakamura, Piotr Spiewak, and Koji Sueoka
- Organizer
  The 8th International Workshop on Modeling in Crystal Growth (IWMCG-8)
- Place of Presentation
  Spa, Belgium
- Year and Date
  2015-11-15
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25390069
[Presentation] First principles calculation of dopant impact on formation energy of intrinsic point defects in single crystal silicon2015
- Author(s)
  Koji Kobayashi, Syunta Yamaoka, Koji Sueoka, and Jan Vanhellemont
- Organizer
  The 8th International Workshop on Modeling in Crystal Growth (IWMCG-8)
- Place of Presentation
  Spa, Belgium
- Year and Date
  2015-11-15
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25390069
[Presentation] Density functional theory study of dopant effect on formation energy of intrinsic point defects in germanium crystals2015
- Author(s)
  Syunta Yamaoka, Koji Kobayashi, Koji Sueoka, and Jan Vanhellemont
- Organizer
  The 8th International Workshop on Modeling in Crystal Growth (IWMCG-8)
- Place of Presentation
  Spa, Belgium
- Year and Date
  2015-11-15
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25390069
[Presentation] Theoretical study of the impact of stress and interstitial oxygen on the behavior of intrinsic point defects in growing CZ-Si crystals2015
- Author(s)
  K. Sueoka, K. Nakamura, and J. Vanhellemont
- Organizer
  GADEST 2015
- Place of Presentation
  Bad Staffelstein, Germany
- Year and Date
  2015-09-20
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25390069
[Presentation] 固液界面近傍の熱応力が育成中Si 単結晶の臨界v/G 値に与える影響2014
- Author(s)
  末岡浩治，神山栄治
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学（神奈川県相模原市）
- Data Source
  KAKENHI-PROJECT-25390069
[Presentation] 無欠陥条件Si 結晶成長中の熱応力起因によるボイド形成2014
- Author(s)
  神山栄治，末岡浩治
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学（神奈川県相模原市）
- Data Source
  KAKENHI-PROJECT-25390069
[Presentation] Stress and Doping Impact on Intrinsic Point Defect Behavior in Growing Single Crystal Silicon2014
- Author(s)
  Koji Sueoka, Eiji Kamiyama and Jan Vanhellemont
- Organizer
  The Electrochemical Society 2014 Fall Meeting, Symposium P3
- Place of Presentation
  Cancun, Mexico
- Invited
- Data Source
  KAKENHI-PROJECT-25390069
[Presentation] Stress and Doping Impact on Intrinsic Point Defect Behavior in Growing Single Crystal Silicon2014
- Author(s)
  Koji Sueoka, Eiji Kamiyama and Jan Vanhellemont
- Organizer
  European Materials Research Society 2014 Spring Meeting, Symposium X
- Place of Presentation
  Lille, France
- Invited
- Data Source
  KAKENHI-PROJECT-25390069
[Presentation] Theoretical study of the impact of stress on the behavior of intrinsic point defects in large-diameter defect-free Si crystals2013
- Author(s)
  Koji Sueoka, Eiji Kamiyama and Jan Vanhellemont
- Organizer
  Gettering and Defect Engineering in Semiconductor Technology 2013
- Place of Presentation
  Oxford, England
- Data Source
  KAKENHI-PROJECT-25390069
[Presentation] IV族半導体結晶におけるクラスタや混晶系の対称性を考慮した原子配置作成プログラムとその適用
- Author(s)
  末岡浩治, 松谷亮, 白澤渉, 神山栄治，泉妻宏治, 鹿島一日児, 中塚理
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学，神奈川県
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25390069
[Presentation] 固液界面近傍の熱応力がSi単結晶の臨界v/G値に与える影響（II）
- Author(s)
  末岡浩治, 神山栄治, 中村浩三
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学，神奈川県
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25390069
[Presentation] Stress and Doping Impact on Intrinsic Point Defect Behaviour in Growing Single Crystal Silicon
- Author(s)
  K. Sueoka, E. Kamiyama, J. Vanhellemont and K. Nakamura
- Organizer
  European Materials and Research Society Spring Meeting, Symposium X
- Place of Presentation
  Lille, France
- Year and Date
  2014-05-26 – 2014-05-30
- Invited
- Data Source
  KAKENHI-PROJECT-25390069
[Presentation] Stress and Doping Impact on Intrinsic Point Defect Behavior in Growing Single Crystal
- Author(s)
  K. Sueoka, E. Kamiyama, J. Vanhellemont and K. Nakamura
- Organizer
  The Electrochemical Society 2014 Fall Meeting, 13th International Symposium on High Purity and High Mobility Semiconductors
- Place of Presentation
  Cancun, Mexico
- Year and Date
  2014-10-05 – 2014-10-10
- Invited
- Data Source
  KAKENHI-PROJECT-25390069
[Presentation] Control of Intrinsic Point Defects in Single Crystal Silicon and Germanium Growth from a Melt
- Author(s)
  J. Vanhellemont, E. Kamiyama, K. Nakamura and K. Sueoka
- Organizer
  The Electrochemical Society 2014 Fall Meeting, 13th International Symposium on High Purity and High Mobility Semiconductors
- Place of Presentation
  Cancun, Mexico
- Year and Date
  2014-10-05 – 2014-10-10
- Invited
- Data Source
  KAKENHI-PROJECT-25390069

1. 山本秀和 (00581141)

# of Collaborated Projects: 3 results

# of Collaborated Products: 4 results
2. 中塚理 (20334998)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results

Sueoka Koji 末岡 浩治

Research Projects

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Co-Researchers

Development of calculation technique for defect control in semiconductors for power device applicationPrincipal Investigator

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Development of calculation method for physical properties based on the possible atomic configurations and its application to the IV group semiconductor materialsPrincipal Investigator

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Basic research for precise control of intrinsic point defects in 450 mm diameter silicon crystal growthPrincipal Investigator

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[Book] シリコン結晶技術 -成長・加工・欠陥制御・評価-2015

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[Book] Defects and Impurities in Silicon Materials2015

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[Book] Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities and Nanocrystals2014

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[Book] Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals （分担執筆）2014

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[Journal Article] Density functional theory study on concentration of intrinsic point defects in growing N-doped Czochralski Si crystal2021

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[Journal Article] Theoretical study of stress impact on formation enthalpy and thermal equilibrium concentration of impurities and dopants in Si single crystal2021

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[Journal Article] Theoretical study of hydrogen impact on concentration of intrinsic point defects during Czochralski Si crystal growth2021

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[Journal Article] Prediction of O Aggregation in Straight Line at High Temperature in Si Crystals: Thermal Donors Attaching to an Oxide Precipitate Surface2020

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[Journal Article] Unsteady numerical simulations considering effects of thermal stress and heavy doping on the behavior of intrinsic point defects in large-diameter Si crystal growing by Czochralski method2020

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[Journal Article] Numerical analysis of effect of thermal stress depending on pulling rate on behavior of intrinsic point defects in large-diameter Si crystal grown by Czochralski method2020

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[Journal Article] Theoretical study on Frenkel pair formation and recombination in single crystal silicon2019

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[Journal Article] Density Functional Theory Study on Stability of Fe, Cu, and Ni Atoms Near (001) Surface of Si Wafer2019

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Sueoka Koji 末岡浩治