Hara Shinsuke 原紳介

… Alternative Names

HARA Shinsuke 原紳介

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Researcher Number	30434038
Affiliation (Current)	2025: 国立研究開発法人情報通信研究機構, 未来ICT研究所小金井フロンティア研究センター, 主任研究員
Affiliation (based on the past Project Information) *help	2022 – 2024: 国立研究開発法人情報通信研究機構, 未来ICT研究所小金井フロンティア研究センター, 主任研究員 2016: 国立研究開発法人情報通信研究機構, 未来ICT研究所フロンティア創造総合研究室, 主任研究員 2015: 国立研究開発法人情報通信研究機構, 未来ICT研究所超高周波ICT研究室, 主任研究員 2014: 独立行政法人情報通信研究機構, 未来ICT研究所超高周波ICT研究室, 主任研究員 2010 – 2012: 東京理科大学, 基礎工学部, 助教
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment Except Principal Investigator Transformative Research Areas, Section (IV) / Electron device/Electronic equipment
Keywords	Principal Investigator エピタキシャル成長 / 結晶成長 / ヘテロ構造 / 電子デバイス Except Principal Investigator バンディット問題 / 光カオス / アナログ / 光電融合 / 高速アナログ回路 / 集積回路 … More / InP / InGaAs / MOSFET / CMOSロードマップ / 歪バンド構造 / III－V族化合物半導体 / III－VMOSFET / CMOS ロードマップ / 量子輸送 / バリスティック伝導 / 量子補正モンテカルロシミュレーション / III-V族化合物半導体 / III-VMOSFET Less

超高速シリコンアナログ回路と超高速光回路の融合
- Principal Investigator
  
  笠松章史
- Project Period (FY)
  2022 – 2026
- Research Category
  
  Grant-in-Aid for Transformative Research Areas (A)
- Review Section
  
  Transformative Research Areas, Section (IV)
- Research Institution
  National Institute of Information and Communications Technology
Research and development of complimentary high electron mobility transistor for next-generation information and communication technologyPrincipal Investigator
- Principal Investigator
  
  Hara Shinsuke
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  National Institute of Information and Communications Technology
Quantum Corrected Simulation of III-V MOSFETs
- Principal Investigator
  
  FUJISHIRO Hiroki
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo University of Science

All 2023 2022 2015 2013 2012 2011 2010

All Journal Article Presentation

[Journal Article] Ultrafast silicon threshold circuitry for chaotic laser time series2022
- Author(s)
  Wada Kazuyuki、Hara Shinsuke、Tanoi Satoru、Kasamatsu Akifumi、Otsuka Yuta、Sekine Kawori、Uchida Atsushi、Naruse Makoto
- Journal Title
  
  AIP Advances
  
  Volume: 12 Issue: 12 Pages: 125225-125225
- DOI
  10.1063/5.0127470
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-ORGANIZER-22H05192, KAKENHI-PROJECT-19H00868, KAKENHI-PLANNED-22H05195, KAKENHI-PLANNED-22H05199
[Journal Article] Comparative Study on Frequency Limits of Nanoscale HEMTs with Various Channel Materials2013
- Author(s)
  Y. Nagai, S. Nagai, J. Sato, S. Hara, H. I. Fujishiro,A. Endoh, I. Watanabe, and A. Kasamatsu
- Journal Title
  
  Proceedings of 25th International Conference on Indium Phosphide and Related Materials (IPRM2013)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Comparative Study on III-V Nanoscale DG MOSFETs with Various Channel Materials2013
- Author(s)
  A. Nishida, R. Ohama, S. Hara, and H. I. Fujishiro
- Journal Title
  
  Abstracts of 40th International Symposium on Compound Semiconductors (ISCS2013)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Comparative Study on Nano-Scale III-V MOSFETs with Various Channel Materials Using Quantum-Corrected Monte Carlo Simulation2012
- Author(s)
  T. Homma, K. Hasegawa, H. Watanabe, S.Haraand H. I. Fujishiro
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 9 Issue: 2 Pages: 346-349
- DOI
  10.1002/pssc.201100275
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Analysis of Performances of InSb HEMTs Using Quantum-Corrected Monte Carlo Simulation2012
- Author(s)
  J. Sato, Y. Nagai, S. Hara, H. I. Fujishiro, A. Endoh, and I. Watanabe
- Journal Title
  
  Proceedings of 24th International Conference on Indium Phosphide and Related Materials (IPRM2012)
  
  Pages: 237-240
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] 量子補正モンテカルロ法による歪みInSb HEMTの遅延時間解析2012
- Author(s)
  永井佑太郎, 佐藤純, 原紳介, 藤代博記, 遠藤聡, 渡邊一世
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 112 Pages: 37-42
- NAID
  110009626392
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Quantum-Corrected Monte Carlo Simulation of InSb HEMTs Considering Strain Effects2011
- Author(s)
  S. Hara, F. Machida, J. Sato, H. I.Fujishiro, A. Endo, Y. Yamashita and I. Watanabe
- Journal Title
  
  Abstracts of 9th Topical Workshop on Heterostructure Microelectronics (TWHM2011)
  
  Pages: 41-42
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Impact of Electron Rebound from Drain on Drive Current in Nano-Scale InGaAs MOSFETs2011
- Author(s)
  H. I. Fujishiro, H. Watanabe, T. Homma and S. Hara
- Journal Title
  
  Proc. International Conference on Solid-State and Integrated Circuit Technology (ICSICT2010)
  
  Volume: 2 Pages: 1350-1352
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] 量子補正モンテカルロ法による歪みInAs HEMTの解析2011
- Author(s)
  佐藤純, 町田史晴, 原紳介, 藤代博記
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 111 Pages: 79-84
- NAID
  110008800765
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Comparative Study on Nano-Scale III-V MOSFETs with Various Channel Materials Using Quantum-Corrected Monte Carlo Simulation2011
- Author(s)
  T. Homma, K. Hasegawa, H. Watanabe, S.Haraand H. I. Fujishiro
- Journal Title
  
  Abstracts of 38th International Symposium on Compound Semiconductors (ISCS2011)
  
  Pages: 469-470
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Strain Effects on Performances in InAs HEMTs2011
- Author(s)
  F. Machida, H. Nishino, J. Sato, H. Watanabe, S. Haraand H. I. Fujishiro
- Journal Title
  
  Proceedings of 23rd International Conference on Indium Phosphide and Related Materials (IPRM2011)
  
  Pages: 437-440
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Monte Carlo Study of Strain Effect on High Field Electron Transport in InAs and InSb2011
- Author(s)
  H. Nishino, I. Kawahira, F. Machida, S. Haraand H. I. Fujishiro
- Journal Title
  
  Proceedings of 22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)
  
  Pages: 156-159
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Quantum-Corrected Monte Carlo Simulation of InSb HEMTs Considering Strain Effects2011
- Author(s)
  S.Hara, F.Machida, J.Sato, H.I.Fujishiro, A.Endo, Y.Yamashita, I.Watanabe
- Journal Title
  
  Abstracts of 9th Topical Workshop on Heterostructure Microelectronics (TWHM2011)
  
  Pages: 41-42
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Quantum-Corrected Monte Carlo Study of Nano-Scale InGaAs MOSFETs2011
- Author(s)
  H. Watanabe, T. Homma, T. Takegishi, Y. Hirasawa, Y. Hirata, S. Haraand H. I. Fujishiro
- Journal Title
  
  Physica Status Solidi C
  
  Volume: 8 Pages: 306-309
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Comparative Study on Nano-Scale III-V MOSFETs with Various Channel Materials Using Quantum-Corrected Monte Carlo Simulation2011
- Author(s)
  T.Homma, K.Hasegawa, H. Watanabe, S.Hara, H.I.Fujishiro
- Journal Title
  
  Abstracts of 38th International Symposium on Compound Semiconductors (ISCS2011)
  
  Pages: 469-470
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Strain Effects on Performances in InAs HEMTs2011
- Author(s)
  F.Machida, H.Nishino, J.Sato, H.Watanabe, S. Hara, H. I. Fujishiro
- Journal Title
  
  Proceedings of 23rd International Conference on Indium Phosphide and Related Materials (IPRM2011)
  
  Pages: 437-440
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] InGaAs-ChannelMOSFETのキャリア輸送に関する理論的解析2011
- Author(s)
  本間嵩広,渡邉久巨,原紳介,藤代博記
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 110 Pages: 47-52
- NAID
  110007890036
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Impact of Electron Rebound from Drain on Drive Current in Nano-Scale InGaAs MOSFETs2010
- Author(s)
  H.I.Fujishiro, H.Watanabe, T.Homma, S.Hara
- Journal Title
  
  Proc.International Conference on Solid-State and Integrated Circuit Technology (ICSICT2010)
  
  Volume: 2 Pages: 1350-1352
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] InGaAs-Channel MOSFETのキャリア輸送に関する理論的解析2010
- Author(s)
  本間嵩広, 渡邉久巨, 原紳介, 藤代博記
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 110 Pages: 47-52
- NAID
  110007890036
- Data Source
  KAKENHI-PROJECT-22560346
[Journal Article] Monte Carlo Study of Strain Effect on High Field Electron Transport in InAs and InSb2010
- Author(s)
  H.Nishino, I.Kawahira, F.Machida, S.Hara, H.I.Fujishiro
- Journal Title
  
  Proceedings of 22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)
  
  Pages: 156-159
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 高速同期型比較器の誤り率の推定と超高速強化学習システムに及ぼす影響2023
- Author(s)
  大塚雄太, 関根かをり, 和田和千, 原紳介, 笠松章史, 田野井聡, 成瀬誠
- Organizer
  電気学会電子回路研究会
- Data Source
  KAKENHI-PLANNED-22H05199
[Presentation] フィルタを用いた２本腕バンデッド問題の学習速度の向上についての一考察2023
- Author(s)
  海野悠人, Barthelemy Estignard, 和田和千, 関根かをり, 原紳介, 笠松章史, 田野井聡, 成瀬　誠
- Organizer
  電気学会電子回路研究会
- Data Source
  KAKENHI-PLANNED-22H05199
[Presentation] Tolerance in Reinforcement Learning Systems for Analogue History Storage Circuits Implemented in 180nm CMOS Process2022
- Author(s)
  Haruto UNNO, Kawori SEKINE, Kazuyuki WADA, Shinsuke HARA, Akifumi KASAMATSU, Satoru TANOI, Makoto NARUSE
- Organizer
  2022 International Conference on Analog VLSI Circuits (AVIC 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-22H05199
[Presentation] Increasing the Speed of Environmental Adaptation Using Nonlinear Characteristic on Analog History Storage Circuit2022
- Author(s)
  Haruto UNNO, Kawori SEKINE, Kazuyuki WADA, Shinsuke HARA, Akifumi KASAMATSU, Satoru TANOI, Makoto NARUSE
- Organizer
  2022 International Conference on Analog VLSI Circuits (AVIC 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-22H05199
[Presentation] クロージングリマーク－光電融合の極限とは－2022
- Author(s)
  笠松章史，原紳介，関根かをり
- Organizer
  Optics & Photonics Japan 2022
- Data Source
  KAKENHI-PLANNED-22H05199
[Presentation] 2本腕バンディット問題を解くためのアナログ回路の検証2022
- Author(s)
  和田和千，川村拓也，関根かをり，原紳介，笠松章史，成瀬誠
- Organizer
  電気学会電子回路研究会
- Data Source
  KAKENHI-PLANNED-22H05199
[Presentation] Tolerance Analysis of Comparator Noise for Ultrafast Photonic Reinforcement Learning2022
- Author(s)
  Hiroki IWAHARA, Kawori SEKINE, Kazuyuki WADA, Makoto NARUSE, Shinsuke HARA, Akifumi KASAMATSU, Satoru TANOI
- Organizer
  2022 International Conference on Analog VLSI Circuits (AVIC 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-22H05199
[Presentation] InGaSbヘテロエピタキシャル薄膜の膜質評価2015
- Author(s)
  原紳介,渡邊一世,竹鶴達哉,辻大介,藤川紗千恵,藤代博記,赤羽浩一,笠松章史
- Organizer
  第76回秋季応用物理学会学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26870910
[Presentation] Comparative Study on Frequency Limits of Nanoscale HEMTs with Various Channel Materials2013
- Author(s)
  Y. Nagai, S. Nagai, J. Sato, S. Hara, H. I. Fujishiro,A. Endoh, I. Watanabe,and A. Kasamatsu
- Organizer
  25th International Conference on Indium Phosphide and Related Materials (IPRM2013)
- Place of Presentation
  神戸
- Year and Date
  2013-05-23
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Comparative Study on III-V Nanoscale DG MOSFETs with Various Channel Materials2013
- Author(s)
  A. Nishida, R. Ohama, S. Hara, and H. I. Fujishiro
- Organizer
  40th International Symposium on Compound Semiconductors (ISCS2013)
- Place of Presentation
  神戸
- Year and Date
  2013-05-20
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] III-V DG-MOSFET の駆動電流に及ぼすソース/ドレイン形状の影響に関する理論的解析2012
- Author(s)
  長谷川慶,西田明央,原紳介,藤代博記
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学
- Year and Date
  2012-09-11
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InGaAs DG-MOSFETの駆動電流に及ぼすソース/ドレイン拡張領域の影響の解析2012
- Author(s)
  西田明央,長谷川慶,原紳介,藤代博記
- Organizer
  電子情報通信学会ソサイエティ大会
- Place of Presentation
  富山大学
- Year and Date
  2012-09-11
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InSb HEMT のデバイス特性に及ぼすラフネス散乱の影響2012
- Author(s)
  佐藤純,荒井敦志,町田史晴,原紳介,藤代博記,遠藤聡,渡邊一世
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 量子補正モンテカルロ法による歪み InSb HEMT の遅延時間解析2012
- Author(s)
  永井佑太郎, 佐藤純, 原紳介, 藤代博記, 遠藤聡, 渡邊一世
- Organizer
  電子情報通信学会 ED 研究会
- Place of Presentation
  福井大学
- Year and Date
  2012-07-26
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Analysis of Performances of InSb HEMTs Using Quantum-Corrected Monte Carlo Simulation2012
- Author(s)
  J. Sato, Y. Nagai, S. Hara, H. I. Fujishiro, A. Endoh, and I. Watanabe
- Organizer
  24th International Conference on Indium Phosphide and Related Materials (IPRM2012)
- Place of Presentation
  University of California Santa Barbara, USA.
- Year and Date
  2012-08-27
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InSb HEMTのデバイス特性に及ぼすラフネス散乱の影響2012
- Author(s)
  佐藤純, 荒井敦志, 町田史晴, 原紳介, 藤代博記, 遠藤聡, 渡邊一世
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 歪みInSb HEMTのモンテカルロ解析2011
- Author(s)
  町田史晴,佐藤純,原紳介,藤代博記,遠藤聡,渡邊一世
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Year and Date
  2011-08-29
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Comparative Study on Nano-Scale III-V MOSFETs witn Various Channel Materials Using Quantum-Corrected Monte Carlo Simulation2011
- Author(s)
  T.Homma, K.Hasegawa, H.Watanabe, S.Hara, H.I.Fujishiro
- Organizer
  38th International Symposium on Compound Semiconductors (ISCS2011)
- Place of Presentation
  Maritim proArte Hotel, Berlin, Geriany
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Quantum-Corrected Monte Carlo Simulation of InSb HEMTs Considering Strain Effects2011
- Author(s)
  S. Hara, F. Machida, J. Sato, H. I.Fujishiro, A. Endo, Y. Yamashita and I. Watanabe
- Organizer
  9th Topical Workshop on Heterostructure Microelectronics (TWHM2011)
- Place of Presentation
  Nagaragawa Convention Center, Gifu.
- Year and Date
  2011-08-28
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InAs HEMTの歪効果に関する理論的研究2011
- Author(s)
  佐藤純, 町田史晴, 西野啓之, 原紳介, 藤代博記
- Organizer
  電子情報通信学会総合大会
- Place of Presentation
  東京都市大学(但し震災によりDVDのみによる発表)
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InAs HEMTの歪効果に関するモンテカルロ解析2011
- Author(s)
  町田史晴, 佐藤純, 西野啓之, 原紳介, 藤代博記
- Organizer
  応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大(但し震災によりDVDのみによる発表)
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 量子補正モンテカルロ法による歪みInAs HEMTの解析2011
- Author(s)
  佐藤純, 町田史晴, 原紳介, 藤代博記
- Organizer
  電子情報通信学会ED研究会
- Place of Presentation
  長岡技術科学大学
- Year and Date
  2011-07-29
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Comparative Study on Nano-Scale III-V MOSFETs with Various Channel Materials Using Quantum-Corrected Monte Carlo Simulation2011
- Author(s)
  T. Homma, K. Hasegawa, H. Watanabe, S.Haraand H. I. Fujishiro
- Organizer
  38th International Symposium on Compound Semiconductors (ISCS2011)
- Place of Presentation
  Berlin, Germany
- Year and Date
  2011-05-22
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 量子補正モンテカルロ法による歪みInAs HEMTの解析2011
- Author(s)
  佐藤純, 町田史晴, 原紳介, 藤代博記
- Organizer
  電子情報通信学会ED研究会
- Place of Presentation
  長岡技術科学大学マルチメディアシステムセンター
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 各種チャネル材料を用いた微細III-V MOSFETの特性比較2011
- Author(s)
  長谷川慶,本間嵩広,原紳介,藤代博記
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学.
- Year and Date
  2011-08-29
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InAs HEMTの歪効果に関する理論的研究2011
- Author(s)
  佐藤純,町田史晴,西野啓之,原紳介,藤代博記
- Organizer
  電子情報通信学会総合大会
- Place of Presentation
  東京都市大
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InAs HEMTの歪効果に関するモンテカルロ解析2011
- Author(s)
  町田史晴,佐藤純,西野啓之,原紳介,藤代博記
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Quantum-Corrected Monte Carlo Simulation of InSb HEMTs Considering Strain Effects2011
- Author(s)
  S.Hara, F.Machida, J Sato, H.I.Fujishiro, H.Endo, Y.Yamashita, I.Watanabe
- Organizer
  9th Topical Workshop on Heterostructure Microelectronics (TWHM2011)
- Place of Presentation
  Nagaragawa Convention Center, Gifu, Japan
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Strain Effects on Performances in InAs HEMTs2011
- Author(s)
  F.Machida, H.Nishino, J.Sato, H.Watanabe, S.Hara, H.I.Fujishiro
- Organizer
  23rd International Conference on Indium Phosphide and Related Materials (IPRM2011)
- Place of Presentation
  Maritim proArte Hotel, Berlin, Germany
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Strain Effects on Performances in InAs HEMTs2011
- Author(s)
  F. Machida, H. Nishino, J. Sato. H. Watanabe, S. Haraand H. I. Fujishiro
- Organizer
  23rd International Conference on Indium Phosphide and Related Materials (IPRM2011)
- Place of Presentation
  Berlin, Germany.
- Year and Date
  2011-05-22
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 各種チャネル材料を用いた微細III-V MOSFETの特性比較2011
- Author(s)
  長谷川慶, 本間嵩広, 原紳介, 藤代博記
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 歪みInSb HEMTのモンテカルロ解析2011
- Author(s)
  町田史晴, 佐藤純, 原紳介, 藤代博記, 遠藤聡, 渡邊一世
- Organizer
  2011年秋季第72回応用物理学会学術講演会
- Place of Presentation
  山形大学
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InGaAs MOSFETの駆動電流に及ぼす電子後方散乱の影響の解析2010
- Author(s)
  本間嵩広, 渡邉久巨, 原紳介, 藤代博記
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Monte Carlo Study of Strain Effect on High Field Electron Transport in InAs and InSb2010
- Author(s)
  H.Nishino, I.Kawahira, F.Machida, S.Hara, H.I.Fujishira
- Organizer
  22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)
- Place of Presentation
  Takamatsu Symbol Tower, Kagawa, Japan
- Year and Date
  2010-06-02
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InGaAs MOSFETの駆動電流に及ぼす電子後方散乱の影響の解析2010
- Author(s)
  本間嵩広,渡邉久巨,原紳介,藤代博記
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学.
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Impact of Electron Rebound from Drain on Drive Current in Nano-Scale InGaAs MOSFETs2010
- Author(s)
  H. I. Fujishiro, H. Watanabe, T. Homma and S. Hara
- Organizer
  International Conference on Solid-State and Integrated Circuit Technology (ICSICT2010)
- Place of Presentation
  Shanghai, China.
- Year and Date
  2010-11-03
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InGaAs-ChannelMOSFETのキャリア輸送に関する理論的解析2010
- Author(s)
  本間嵩広,渡邉久巨,原紳介,藤代博記
- Organizer
  電子情報通信学会ED研究会
- Place of Presentation
  北陸先端科学技術大学院大学.
- Year and Date
  2010-06-18
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InGaAs-Channel MOSFETのキャリア輸送に関する理論的解析2010
- Author(s)
  本間嵩広, 渡邉久巨, 原紳介, 藤代博記
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  北陸先端科学技術大学院大学
- Year and Date
  2010-06-18
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 格子整合系歪みInAs HEMTのモンテカルロ解析2010
- Author(s)
  町田史晴, 西野啓之, 原紳介, 藤代博記
- Organizer
  応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] InGaAs MOSFETの駆動電流に及ぼす電子後方散乱の理論的解析2010
- Author(s)
  渡邉久巨,本間嵩広,原紳介,藤代博記
- Organizer
  電子情報通信学会ソサイエティ大会
- Place of Presentation
  大阪府立大学
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Quantum-Corrected Monte Carlo Study of Nano-Scale InGaAs MOSFETs2010
- Author(s)
  H.Watanabe, T.Homma, T.Takegishi, Y.Hirasawa, Y.Hirata, S.Hara, H.I.Fujishiro
- Organizer
  37th International Symposium on Compound Semiconductors (ISCS2010)
- Place of Presentation
  Takamatsu Symbol Tower, Kagawa, Japan
- Year and Date
  2010-06-01
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Monte Carlo Study of Strain Effect on High Field Electron Transport in InAs and InSb2010
- Author(s)
  H. Nishino, I. Kawahira, F. Machida, S. Haraand H. I. Fujishiro
- Organizer
  22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)
- Place of Presentation
  Kagawa.
- Year and Date
  2010-06-02
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] 格子整合系歪みInAs HEMTのモンテカルロ解析2010
- Author(s)
  町田史晴,西野啓之,原紳介,藤代博記
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Impact of Electron Rebound from Drain on Drive Current in Nano-Scale InGaAs MOSFETs2010
- Author(s)
  H.I.Fujishiro, H.Watanabe, T.Homma, S.Hara
- Organizer
  International Conference on Solid-State and Integrated Circuit Technology (ICSICT2010)
- Place of Presentation
  InterContinental Hotel, Shanghai, China
- Year and Date
  2010-11-03
- Data Source
  KAKENHI-PROJECT-22560346
[Presentation] Quantum-Corrected Monte Carlo Study of Nano-Scale InGaAs MOSFETs2010
- Author(s)
  H. Watanabe, T. Homma, T. Takegishi, Y. Hirasawa, Y. Hirata, S. Haraand H. I. Fujishiro
- Organizer
  37th International Symposium on Compound Semiconductors (ISCS2010)
- Place of Presentation
  Kagawa.
- Year and Date
  2010-06-01
- Data Source
  KAKENHI-PROJECT-22560346

1. FUJISHIRO Hiroki (60339132)

# of Collaborated Projects: 1 results

# of Collaborated Products: 55 results
2. 笠松章史 (30296884)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
3. 関根かをり (40282834)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. TAKAKUBO Kawori

# of Collaborated Projects: 0 results

# of Collaborated Products: 7 results
5. 成瀬誠

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
6. 内田淳史

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Hara Shinsuke 原 紳介

HARA Shinsuke 原 紳介

Research Projects

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Co-Researchers

超高速シリコンアナログ回路と超高速光回路の融合

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Review Section

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Research and development of complimentary high electron mobility transistor for next-generation information and communication technologyPrincipal Investigator

Principal Investigator

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Research Institution

Quantum Corrected Simulation of III-V MOSFETs

Principal Investigator

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[Journal Article] Ultrafast silicon threshold circuitry for chaotic laser time series2022

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[Journal Article] Comparative Study on Frequency Limits of Nanoscale HEMTs with Various Channel Materials2013

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[Journal Article] Comparative Study on III-V Nanoscale DG MOSFETs with Various Channel Materials2013

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[Journal Article] Comparative Study on Nano-Scale III-V MOSFETs with Various Channel Materials Using Quantum-Corrected Monte Carlo Simulation2012

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DOI

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[Journal Article] Analysis of Performances of InSb HEMTs Using Quantum-Corrected Monte Carlo Simulation2012

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[Journal Article] 量子補正モンテカルロ法による歪みInSb HEMTの遅延時間解析2012

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NAID

Data Source

[Journal Article] Quantum-Corrected Monte Carlo Simulation of InSb HEMTs Considering Strain Effects2011

Author(s)

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Data Source

[Journal Article] Impact of Electron Rebound from Drain on Drive Current in Nano-Scale InGaAs MOSFETs2011

Author(s)

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Data Source

[Journal Article] 量子補正モンテカルロ法による歪みInAs HEMTの解析2011

Author(s)

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NAID

Data Source

[Journal Article] Comparative Study on Nano-Scale III-V MOSFETs with Various Channel Materials Using Quantum-Corrected Monte Carlo Simulation2011

Author(s)

Journal Title

Data Source

[Journal Article] Strain Effects on Performances in InAs HEMTs2011

Author(s)

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Data Source

[Journal Article] Monte Carlo Study of Strain Effect on High Field Electron Transport in InAs and InSb2011

Author(s)

Journal Title

Data Source

[Journal Article] Quantum-Corrected Monte Carlo Simulation of InSb HEMTs Considering Strain Effects2011

Author(s)

Journal Title

Data Source

[Journal Article] Quantum-Corrected Monte Carlo Study of Nano-Scale InGaAs MOSFETs2011

Hara Shinsuke 原紳介

HARA Shinsuke 原紳介