Oda Osamu 小田修

… Alternative Names

小田修オダオサム

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Researcher Number	30588695
Affiliation (Current)	2025: 名古屋大学, 低温プラズマ科学研究センター, 特任教授
Affiliation (based on the past Project Information) *help	2018 – 2020: 名古屋大学, 低温プラズマ科学研究センター, 特任教授
Review Section/Research Field	Except Principal Investigator Basic Section 30010:Crystal engineering-related
Keywords	Except Principal Investigator in-situ観察 / 高移動度チャネル / InN / その場観察 / 窒化インジウム / モザイシティ / 高In組成 / プラズマ支援 / 分子線エピタキシー / InGaN / ラジカル / プラズマ

Study on initial growth mechanism of InN under high density radial irradiation for high carrier mobility channel
- Principal Investigator
  
  KONDO HIROKI
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Nagoya University

All 2019 2018

All Journal Article Presentation

[Journal Article] Effects of plasma shield plate design on epitaxial GaN films grown for large-sized wafers in radical-enhanced metalorganic chemical vapor deposition2019
- Author(s)
  Isobe Yasuhiro、Sakai Takayuki、Sugiyama Naoharu、Mizushima Ichiro、Suguro Kyoichi、Miyashita Naoto、Lu Yi、Wilson Amalraj Frank、Kumar Dhasiyan Arun、Ikarashi Nobuyuki、Kondo Hiroki、Ishikawa Kenji、Shimizu Naohiro、Oda Osamu、Sekine Makoto、Hori Masaru
- Journal Title
  
  Journal of Vacuum Science & Technology B
  
  Volume: 37 Issue: 3 Pages: 031201-031201
- DOI
  10.1116/1.5083970
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H01890
[Journal Article] Simulation-aided designing of confinement of very-high-frequency excited nitrogen plasma using a shield plate2019
- Author(s)
  Yasuhiro Isobe, Takayuki Sakai, Kyoichi Suguro, Naoto Miyashita, Amalraj Frank Wilson, Hiroki Kondo, Kenji Ishikawa, Naohiro Shimizu, Osamu Oda, Makoto Sekine, and Masaru Hori
- Journal Title
  
  Journal of Vacuum Science Technology B
  
  Volume: 37 Issue: 6
- DOI
  10.1116/1.5114831
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H01890
[Journal Article] Effect of N2/H2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD)2018
- Author(s)
  Amalraj Frank Wilson、Dhasiyan Arun Kumar、Lu Yi、Shimizu Naohiro、Oda Osamu、Ishikawa Kenji、Kondo Hiroki、Sekine Makoto、Ikarashi Nobuyuki、Hori Masaru
- Journal Title
  
  AIP Advances
  
  Volume: 8 Issue: 11 Pages: 115116-115116
- DOI
  10.1063/1.5050819
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H01890
[Presentation] Growth of Ultrathin AlN on Si (111) Substrate by Radical Enhanced Metalorganic Chemical Vapor Deposition (REMOCVD)2019
- Author(s)
  Amalraj Frank Wilson, Dhasiyan Arun Kumar, Yi Lu, Naohiro Shimizu, Osamu Oda, Kenji Ishikawa, and Masaru Hori
- Organizer
  International Symposium on Advanced Plasma Sciences and its Applications for Nitrides and Nanomaterials (ISPLASMA 2019)
- Data Source
  KAKENHI-PROJECT-18H01890
[Presentation] Effects of in-situ irradiation of nitrogen-hydrogen plasma on flatness and composition of GaN surfaces before epitaxial growth by a radical-enhanced metalorganic chemical vapor deposition2018
- Author(s)
  Hiroki Kondo, Amalraj Frank Wilson, Dhasiyan Arun Kumar, Yi Lu, Naohiro Shimizu, Osamu Oda, Kenji Ishikawa, Masaru Hori
- Organizer
  71st Annual Gaseous Electronics Conference
- Data Source
  KAKENHI-PROJECT-18H01890
[Presentation] Influence of Chamber Pressure on the Crystal Quality of Homo-Epitaxial GaN Grown by Radical-Enhanced MOCVD (REMOCVD)2018
- Author(s)
  Amalraj Frank Wilson, Dhasiyan Arun Kumar, Naohiro Shimizu, Osamu Oda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine and Masaru Hori
- Organizer
  Dry Process Symposium
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01890
[Presentation] Influence of RF Plasma Power on the Homo-Epitaxial GaN Crystal Quality Grown by Radical Enhanced MOCVD (REMOCVD)2018
- Author(s)
  Amalraj Frank Wilson, Dhasiyan Arun Kumar, Naohiro Shimizu, Osamu Oda, Hiroki Kondo, Kenji Ishikawa, and Masaru Hori
- Organizer
  International Workshop on Nitride Semiconductors (IWN-2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01890
[Presentation] Influence of N2/H2 Plasma Irradiation to GaN Substrate for Improving the Interface of the Homoepitaxial GaN Grown by Radical Enhanced MOCVD (REMOCVD)2018
- Author(s)
  Amalraj Frank Wilson, Dhasiyan Arun Kumar, Naohiro Shimizu, Osamu Oda, Nobuyuki Ikarashi, Hiroki Kondo, Kenji Ishikawa, and Masaru Hori
- Organizer
  International Workshop on Nitride Semiconductors (IWN-2018),
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01890
[Presentation] Novel Epitaxial Growth Methods for Nitride Materials with Using Plasma Technology2018
- Author(s)
  Osamu Oda, Frank Wilson Amalraj, Naohiro Shimizu, Hiroki Kondo, Makoto Sekine, Yuri Tsutsumi, Kenji Ishikawa, H. Kano, Nobuyuki Ikarashi and Masaru Hori
- Organizer
  International Meeting on Information Display
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01890
[Presentation] Novel Epitaxial Growth Methods for Nitride Materials with Using Plasma Technology2018
- Author(s)
  Osamu Oda, Frank Wilson Amalraj, Naohiro Shimizu, Hiroki Kondo, Makoto Sekine, Yuri Tsutsumi, Kenji Ishikawa, H. Kano, Nobuyuki Ikarashi and Masaru Hori
- Organizer
  Energy Materials Nanotechnology
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01890
[Presentation] Surface Treatment Method of GaN Substrates for Homoepitaxial GaN Grown by REMOCVD2018
- Author(s)
  Amalraj Frank Wilson, Dhasiyan Arun Kumar, Naohiro Shimizu, Osamu Oda, Hiroki Kondo, Kenji Ishikawa, and Masaru Hori
- Organizer
  79th JSAP autumn meeting, 2018
- Data Source
  KAKENHI-PROJECT-18H01890

1. KONDO HIROKI (50345930)

# of Collaborated Projects: 1 results

# of Collaborated Products: 10 results
2. 堤隆嘉 (50756137)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results

Oda Osamu 小田 修

小田 修 オダ オサム

Research Projects

Research Products

Co-Researchers

Study on initial growth mechanism of InN under high density radial irradiation for high carrier mobility channel

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] Effects of plasma shield plate design on epitaxial GaN films grown for large-sized wafers in radical-enhanced metalorganic chemical vapor deposition2019

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Simulation-aided designing of confinement of very-high-frequency excited nitrogen plasma using a shield plate2019

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Effect of N2/H2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD)2018

Author(s)

Journal Title

DOI

Data Source

[Presentation] Growth of Ultrathin AlN on Si (111) Substrate by Radical Enhanced Metalorganic Chemical Vapor Deposition (REMOCVD)2019

Author(s)

Organizer

Data Source

[Presentation] Effects of in-situ irradiation of nitrogen-hydrogen plasma on flatness and composition of GaN surfaces before epitaxial growth by a radical-enhanced metalorganic chemical vapor deposition2018

Author(s)

Organizer

Data Source

[Presentation] Influence of Chamber Pressure on the Crystal Quality of Homo-Epitaxial GaN Grown by Radical-Enhanced MOCVD (REMOCVD)2018

Author(s)

Organizer

Data Source

[Presentation] Influence of RF Plasma Power on the Homo-Epitaxial GaN Crystal Quality Grown by Radical Enhanced MOCVD (REMOCVD)2018

Author(s)

Organizer

Data Source

[Presentation] Influence of N2/H2 Plasma Irradiation to GaN Substrate for Improving the Interface of the Homoepitaxial GaN Grown by Radical Enhanced MOCVD (REMOCVD)2018

Author(s)

Organizer

Data Source

[Presentation] Novel Epitaxial Growth Methods for Nitride Materials with Using Plasma Technology2018

Author(s)

Organizer

Data Source

[Presentation] Novel Epitaxial Growth Methods for Nitride Materials with Using Plasma Technology2018

Author(s)

Organizer

Data Source

[Presentation] Surface Treatment Method of GaN Substrates for Homoepitaxial GaN Grown by REMOCVD2018

Author(s)

Organizer

Data Source

Oda Osamu 小田修

小田修オダオサム