miyoshi makoto 三好実人

… Alternative Names

MAKOTO MIYOSHI 三好実人

Less

Researcher Number	30635199
Other IDs	https://orcid.org/0000-0001-9583-1891
Affiliation (Current)	2025: 名古屋工業大学, 工学(系)研究科(研究院), 教授
Affiliation (based on the past Project Information) *help	2016 – 2024: 名古屋工業大学, 工学(系)研究科(研究院), 教授
Review Section/Research Field	Principal Investigator Basic Section 21060:Electron device and electronic equipment-related / Electron device/Electronic equipment Except Principal Investigator Basic Section 21050:Electric and electronic materials-related / Basic Section 21060:Electron device and electronic equipment-related
Keywords	Principal Investigator パワートランジスタ / 窒化物半導体 / ヘテロ接合FET / AlN / ワイドバンドギャップ / 高周波トランジスタ / 半導体物性 / 結晶工学 / 電子・電気材料 / 電子デバイス・機器 … More / ノーマリオフ / 界面準位密度 / トランジスタ / AlGaN / フォトルミネッセンス / 界面準位 … More Except Principal Investigator 窒化物半導体 / トランジスタ / 界面制御 / 窒化物半導 / 電気化学反応 / ウェットエッチング / 極微細金属パターン付き基板 / EBSD / ラマン分光 / アニーリング / 極微細金属パターン / グラフェン膜 / ラマン分光 / アニーリング / 極微細金属パターン / 金属凝集法 / グラフェン膜 / 電子ビーム露光 / 金属凝集 / FET / グラフェン Less

窒化物半導体異種界面パラレル伝導制御とマルチチャネル高周波トランジスタの開発
- Principal Investigator
  
  佐藤威友
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Hokkaido University
Development of power transistors using ultra-wide-bandgap AlN-based semiconductorsPrincipal Investigator
- Principal Investigator
  
  Miyoshi Makoto
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Nagoya Institute of Technology
Development of wet etching technology for nitride semiconductors using strong oxidizing agents and application to transistors
- Principal Investigator
  
  Sato Taketomo
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Hokkaido University
Fabrication of high-performance and low-power-consumption graphene FETs using substrates with ultra-fine metal patterns
- Principal Investigator
  
  Toshiharu Kubo
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Nagoya Institute of Technology
Construction of process and design basis for the realization of a new ultra-low loss nitride heterostructure transistorsPrincipal Investigator
- Principal Investigator
  
  MAKOTO MIYOSHI
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Nagoya Institute of Technology

All 2024 2023 2022 2021 2020 2019 2018 2017

All Journal Article Presentation

[Journal Article] DC and pulse I-V characteristics of strain-engineered AlGaInN/GaN HEMTs fabricated on single-crystal AlN substrate2023
- Author(s)
  Miyoshi Makoto、Tanaka Sakura、Kawaide Tomoyuki、Inoue Akiyoshi、Egawa Takashi
- Journal Title
  
  physica status solidi (a)
  
  Volume: 220 Issue: 16 Pages: 2200733-2200733
- DOI
  10.1002/pssa.202200733
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H01389
[Journal Article] High drain-current-density and high breakdown-field Al<sub>0.36</sub>Ga<sub>0.64</sub>N-channel heterojunction field-effect transistors with a dual AlN/AlGaInN barrier layer2022
- Author(s)
  Inoue Akiyoshi、Tanaka Sakura、Egawa Takashi、Miyoshi Makoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: SC Pages: SC1039-SC1039
- DOI
  10.35848/1347-4065/ac4b09
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21H01389
[Journal Article] Improved on-state performance in AlGaN-channel heterojunction field-effect transistors with a quaternary AlGaInN barrier layer and a selectively grown n++-GaN contact layer2021
- Author(s)
  Miyoshi Makoto、Inoue Akiyoshi、Yamanaka Mizuki、Harada Hiroki、Egawa Takashi
- Journal Title
  
  Materials Science in Semiconductor Processing
  
  Volume: 133 Pages: 105960-105960
- DOI
  10.1016/j.mssp.2021.105960
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H01389
[Journal Article] Improved field-effect mobility in transfer-free graphene films synthesized via the metal agglomeration technique using high-crystallinity Ni catalyst films2021
- Author(s)
  Toshiharu Kubo, Akira Takahashi, Makoto Miyoshi, Takashi Egawa
- Journal Title
  
  Applied Physics Express
  
  Volume: 14 Issue: 11 Pages: 116503-116503
- DOI
  10.35848/1882-0786/ac30ed
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19K04531
[Journal Article] Design and material growth of AlGaN-channel two-dimensional-electron gas heterostructures employing strain-controlled quaternary AlGaInN barrier layers2018
- Author(s)
  Hosomi Daiki、Chen Heng、Egawa Takashi、Miyoshi Makoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: 1 Pages: 011004-011004
- DOI
  10.7567/1347-4065/aaed2f
- NAID
  210000135245
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06298
[Journal Article] Improved mobility in InAlN/AlGaN two-dimensional electron gas heterostructures with an atomically smooth heterointerface2018
- Author(s)
  Hosomi Daiki、Miyachi Yuta、Egawa Takashi、Miyoshi Makoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 57 Issue: 4S Pages: 04FG12-04FG12
- DOI
  10.7567/jjap.57.04fg12
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06298
[Journal Article] Distinct light emission from two-dimensional electron gas at a lattice-matched InAlN/AlGaN heterointerface2018
- Author(s)
  Li Lei、Hosomi Daiki、Miyachi Yuta、Miyoshi Makoto、Egawa Takashi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 112 Issue: 10 Pages: 102102-102102
- DOI
  10.1063/1.5023847
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06298
[Journal Article] Post-deposition annealing effects on the insulator/semiconductor interfaces of Al2O3/AlGaN/GaN structures on Si substrates2017
- Author(s)
  Kubo Toshiharu、Miyoshi Makoto、Egawa Takashi
- Journal Title
  
  Semiconductor Science and Technology
  
  Volume: 32 Issue: 6 Pages: 065012-065012
- DOI
  10.1088/1361-6641/aa6c09
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06298
[Journal Article] High-performance ultraviolet photodetectors based on lattice-matched InAlN/AlGaN heterostructure field-effect transistors gated by transparent ITO films2017
- Author(s)
  Li Lei、Hosomi Daiki、Miyachi Yuta、Hamada Takeaki、Miyoshi Makoto、Egawa Takashi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 111 Issue: 10 Pages: 102106-102106
- DOI
  10.1063/1.4986311
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K06298
[Presentation] Fabrication of high AlN-mole-fraction Al0.7Ga0.3N channel HFETs using a single-crystal AlN substrate2024
- Author(s)
  Y. Kometani, T. Kawaide, S. Tanaka, T. Egawa, M. Miyoshi
- Organizer
  16th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01389
[Presentation] 単結晶AlN基板上の薄層UID-GaNチャネルを備えた AlGaInN/GaN HEMTの作製と特性評価2023
- Author(s)
  川出智之，米谷宜展，田中さくら，江川孝志，三好実人
- Organizer
  電子情報通信学会CPM/ED/LQE研究会
- Data Source
  KAKENHI-PROJECT-21H01389
[Presentation] 単結晶AlN基板上への高AlN比Al0.7Ga0.3NチャネルHFETの作製2023
- Author(s)
  川出智之、田中さくら、米谷宜展、江川孝志、三好実人
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01389
[Presentation] 単結晶AlN基板上高AlN比Al0.7Ga0.3NチャネルHFETの作製（II）2023
- Author(s)
  米谷宜展，川出智之，田中さくら，江川孝志，三好実人
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01389
[Presentation] Device characteristics of strain-engineered AlGaInN/GaN HEMTs on single-srystal AlN substrate2023
- Author(s)
  T. Kawaide, S. Tanaka, A. Inoue, T. Egawa, M. Miyoshi
- Organizer
  15th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01389
[Presentation] Device characteristics of AlGaInN/GaN HEMTs with a thin 150-nm-thick UID-GaN channel fabricated on single-crystal AlN substrate2023
- Author(s)
  T. Kawaide, Y. Kometani, S. Tanaka, T. Egawa, M. Miyoshi
- Organizer
  14th International Conference on Nitride Semiconductors (ICNS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01389
[Presentation] 単結晶AlN基板上の薄層UID-GaNチャネルを備えた AlGaInN/GaN HEMTの作製と特性評価2023
- Author(s)
  川出智之，米谷宜展，田中さくら，江川孝志，三好実人
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01389
[Presentation] 単結晶AlN基板上AlGaInN/GaN HEMTの作製と特性評価 (II)2023
- Author(s)
  川出智之、田中さくら、井上暁喜、江川孝志、三好実人
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01389
[Presentation] UWBG窒化物AlN系パワートランジスタの進展2023
- Author(s)
  三好実人
- Organizer
  電子情報通信学会総合大会
- Invited
- Data Source
  KAKENHI-PROJECT-21H01389
[Presentation] AlGaInN/GaN HEMTs on single-crystal AlN substrate2022
- Author(s)
  Sakura Tanaka, Tomoyuki Kawaide, Akiyoshi Inoue, Takashi Egawa, Makoto Miyoshi
- Organizer
  International Workshop on Nitride Semiconductors 2022 (IWN 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01389
[Presentation] 単結晶AlN基板上AlGaInN/GaN HEMTの作製と特性評価2022
- Author(s)
  田中さくら、川出智之、井上暁喜、江川孝志、三好実人
- Organizer
  電子情報通信学会 CPM/ED/LQE研究会
- Data Source
  KAKENHI-PROJECT-21H01389
[Presentation] 単結晶AlN基板上AlGaInN/GaN HEMTの作製と特性評価2022
- Author(s)
  田中さくら、井上暁喜、川出智之、江川孝志、三好実人
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01389
[Presentation] Fabrication and device characteristics of AlGaInN/GaN HEMTs on single-crystal AlN Substrate2022
- Author(s)
  S. Tanaka, T. Kawaide, A. Inoue, T. Egawa, M. Miyoshi
- Organizer
  14th Topical Workshop on Heterostructure Microelectronics (TWHM 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01389
[Presentation] 電子情報通信学会電子デバイス研究会2021
- Author(s)
  伊藤滉朔、小松裕斗、渡久地政周、井上暁喜、田中さくら、三好実人、佐藤威友
- Organizer
  光電気化学エッチング法を用いたAlGaInN/AlGaN HFETの作製
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] 光電気化学エッチング法を用いたAlGaInN/AlGaN HFETの作製2021
- Author(s)
  伊藤滉朔、小松祐斗、渡久地政周、井上暁喜、田中さくら、三好実人、佐藤威友
- Organizer
  電子情報通信学会 CPM/ED/LQE研究会
- Data Source
  KAKENHI-PROJECT-21H01389
[Presentation] High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer and selective-area regrowth ohmic contacts2021
- Author(s)
  Akiyoshi Inoue, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi
- Organizer
  2021 International Conference on Solid State Devices and Materials (SSDM 2021)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01389
[Presentation] 転写フリーグラフェンの結晶性に及ぼすNi金属触媒の結晶性の効果II2021
- Author(s)
  高橋明空、芝南々子、久保俊晴、三好実人、江川孝志
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04531
[Presentation] 選択再成長オーミックコンタクトおよびAlNバリアを用いた四元混晶AlGaInN/Al0.36Ga0.64N HFETの作製と特性評価2021
- Author(s)
  井上暁喜、田中さくら、江川孝志、三好実人
- Organizer
  第82回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H01389
[Presentation] 微細構造を有するNiパターンの凝集現象を用いたサファイア基板上転写フリーグラフェン膜の作製2021
- Author(s)
  高橋明空、加藤一朗、久保俊晴、三好実人、江川孝志
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04531
[Presentation] 光電気化学エッチング法を用いたAlGaInN/AlGaNリセスゲートHFETの作製2021
- Author(s)
  伊藤滉朔，小松裕斗，渡久地政周，井上暁喜，三好実人，佐藤威友
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] AlN/AlGaInNバリアを備えた高耐圧Al0.36Ga0.64NチャネルHFET2021
- Author(s)
  井上暁喜、田中さくら、江川孝志、三好実人
- Organizer
  電子情報通信学会 CPM/ED/LQE研究会
- Data Source
  KAKENHI-PROJECT-21H01389
[Presentation] 転写フリーグラフェンFETの電気特性に対する Ni金属触媒の結晶性の効果2020
- Author(s)
  小林幹, ドルジダウガビルグーン, 高橋明空, 久保俊晴, 三好実人, 江川孝志
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04531
[Presentation] 触媒金属凝集法を用いて作製した転写フリー多層膜グラフェンの光応答特性の評価22019
- Author(s)
  Dorjdagva Bilguun, 小林幹, 久保俊晴, 三好実人, 江川孝志
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04531
[Presentation] Study on MIS interface states of ALD-Al2O3/AlGaInN/AlGaN heterostructures2019
- Author(s)
  S. Saito, D. Hosomi, K. Furuoka, T. Kubo, T. Egawa and M. Miyoshi
- Organizer
  11th Int. Symp. Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06298
[Presentation] 転写フリーグラェンの結晶性に及ぼすNi金属触媒の結晶性の効果2019
- Author(s)
  小林幹, Dorjdagva Bilguun, 久保俊晴, 三好実人, 江川孝志
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-19K04531
[Presentation] ALD-Al2O3膜を堆積したAlGaInN/AlGaNヘテロ構造におけるMIS界面準位の評価2019
- Author(s)
  斉藤早紀、細見大樹、古岡啓太、久保俊晴、江川孝志、三好実人
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06298
[Presentation] A novel AlGaN-channel 2DEG heterostructure employing a quaternary InAlGaN barrier layer and its thermal stability of 2DEG properties2018
- Author(s)
  D. Hosomi, H. Chen, T. Egawa and M. Miyoshi
- Organizer
  19th Int. Conf. Metalorganic Vapor Phase Epitaxy (ICMOVPW XIX)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06298
[Presentation] Device characteristics of a novel AlGaN-channel HFET employing a quaternary AlGaInN barrier layer2018
- Author(s)
  D. Hosomi, K. Furuoka, H. Chen, T. Kubo, T. Egawa and M. Miyoshi
- Organizer
  2018 Int. Workshop on Nitride Semiconductors (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06298
[Presentation] 四元混晶AlGaInNバリア層を有するAlGaNチャネルHFETのデバイス特性評価2018
- Author(s)
  細見大樹、古岡啓太、Chen Heng、久保俊晴、江川孝志、三好実人
- Organizer
  先進パワー半導体分科会　第5回講演会
- Data Source
  KAKENHI-PROJECT-16K06298
[Presentation] 四元混晶AlGaInNバリア層を用いたAlGaNチャネルHFETのデバイス特性評価2018
- Author(s)
  細見大樹、古岡啓太、Chen Heng、久保俊晴、江川孝志、三好実人
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06298
[Presentation] 歪み制御AlGaInNバリア層を備えた耐圧2.5kV級AlGaNチャネルHFET2018
- Author(s)
  細見大樹、古岡啓太、Chen Heng、斉藤早紀、久保俊晴、江川孝志、三好実人
- Organizer
  電子情報通信学会 CPM/ED/LQE研究会
- Data Source
  KAKENHI-PROJECT-16K06298
[Presentation] 高効率パワーエレクトロニクス機器のためのWBG半導体パワーデバイス技術と超高耐圧AlGaNトランジスタ2018
- Author(s)
  三好　実人
- Organizer
  日本金属学会・日本鉄鋼協会東海支部　学術討論会『将来のクルマを支える材料技術』
- Invited
- Data Source
  KAKENHI-PROJECT-16K06298
[Presentation] MOCVD法によるInAlGaN/AlGaNヘテロ構造の成長とその2DEG特性の熱的安定性評価2018
- Author(s)
  細見大樹、陳桁、江川孝志、三好実人
- Organizer
  第65回　応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06298
[Presentation] プラズマエッチング処理ならびにAl2O3-ALD成膜プロセスを経たAlGaNエピタキシャル膜のPLライフタイム測定2017
- Author(s)
  中島陸、森拓磨、細見大樹、江川孝志、三好実人
- Organizer
  第7８回　応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06298
[Presentation] 格子整合系InAlN/AlGaNヘテロ構造を用いた電界効果UVフォトトランジスタ2017
- Author(s)
  細見大樹、岡田真由子、李磊、江川孝志、三好実人
- Organizer
  第7８回　応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06298
[Presentation] AlGaNチャネル2DEGヘテロ構造の結晶評価～ヘテロ界面平坦性とAlGaN初期成長条件との関係～2017
- Author(s)
  細見大樹、江川孝志、三好実人
- Organizer
  第7８回　応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K06298
[Presentation] Nearly lattice-matched InAlN/AlGaN 2DEG heterostructures and filed-effect transistors for high power applications2017
- Author(s)
  Makoto Miyoshi, Daiki Hosomi, Mayuko Okada, Riku Nakashima, Joseph J. Freedsman, and Takashi Egawa
- Organizer
  2017 Int. Conf. on Nitride Semiconductors (ICNS)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06298
[Presentation] High-performance ultraviolet photodetectors based on lattice-matched InAlN/AlGaN heterostructure field-effect transistors gated by transparent ITO films2017
- Author(s)
  Lei Li, Daiki Hosomi, Makoto Miyoshi, and Takashi Egawa
- Organizer
  2017 Int. Conf. on Nitride Semiconductors (ICNS)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06298
[Presentation] ヘテロ界面平坦性改善による InAlN/AlGaN HFET 構造の移動度向上2017
- Author(s)
  細見大樹，宮地祐太，江川孝志，三好実人
- Organizer
  先進パワー半導体分科会第4回講演会
- Data Source
  KAKENHI-PROJECT-16K06298
[Presentation] Improved mobility in InAlN/AlGaN two-dimensional electron gas heterostructures with an atomically-smooth heterointerface2017
- Author(s)
  Daiki Hosomi, Yuta Miyachi, Takashi Egawa, and Makoto Miyoshi
- Organizer
  2018 Int. Conf. on Sloid State Devices and Materials (SSDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K06298
[Presentation] ヘテロ界面平坦性改善によるInAlN/AlGaN HFET構造の移動度向上2017
- Author(s)
  細見大樹, 宮地祐太, 三好実人, 江川孝志
- Organizer
  第64回　応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-16K06298

1. Sato Taketomo (50343009)

# of Collaborated Projects: 3 results

# of Collaborated Products: 3 results
2. Toshiharu Kubo (10422338)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
3. 橋詰保 (80149898)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. 赤澤正道 (30212400)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

miyoshi makoto 三好 実人

MAKOTO MIYOSHI 三好 実人

Research Projects

Research Products

Co-Researchers

窒化物半導体異種界面パラレル伝導制御とマルチチャネル高周波トランジスタの開発

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of power transistors using ultra-wide-bandgap AlN-based semiconductorsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of wet etching technology for nitride semiconductors using strong oxidizing agents and application to transistors

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Fabrication of high-performance and low-power-consumption graphene FETs using substrates with ultra-fine metal patterns

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Construction of process and design basis for the realization of a new ultra-low loss nitride heterostructure transistorsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] DC and pulse I-V characteristics of strain-engineered AlGaInN/GaN HEMTs fabricated on single-crystal AlN substrate2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] High drain-current-density and high breakdown-field Al<sub>0.36</sub>Ga<sub>0.64</sub>N-channel heterojunction field-effect transistors with a dual AlN/AlGaInN barrier layer2022

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Improved on-state performance in AlGaN-channel heterojunction field-effect transistors with a quaternary AlGaInN barrier layer and a selectively grown n++-GaN contact layer2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Improved field-effect mobility in transfer-free graphene films synthesized via the metal agglomeration technique using high-crystallinity Ni catalyst films2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Design and material growth of AlGaN-channel two-dimensional-electron gas heterostructures employing strain-controlled quaternary AlGaInN barrier layers2018

Author(s)

Journal Title

DOI

NAID

Data Source

[Journal Article] Improved mobility in InAlN/AlGaN two-dimensional electron gas heterostructures with an atomically smooth heterointerface2018

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Distinct light emission from two-dimensional electron gas at a lattice-matched InAlN/AlGaN heterointerface2018

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Post-deposition annealing effects on the insulator/semiconductor interfaces of Al2O3/AlGaN/GaN structures on Si substrates2017

Author(s)

Journal Title

DOI

Data Source

[Journal Article] High-performance ultraviolet photodetectors based on lattice-matched InAlN/AlGaN heterostructure field-effect transistors gated by transparent ITO films2017

Author(s)

Journal Title

DOI

miyoshi makoto 三好実人

MAKOTO MIYOSHI 三好実人