Kawanago Takamasa 川那子高暢

Researcher Number	30726633
Other IDs
Affiliation (Current)	2025: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員
Affiliation (based on the past Project Information) *help	2024: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員 2016 – 2023: 東京工業大学, 科学技術創成研究院, 助教 2015 – 2016: 東京工業大学, 量子ナノエレクトロニクス研究センター, 助教
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / Transformative Research Areas, Section (II) / Basic Section 21060:Electron device and electronic equipment-related Except Principal Investigator Transformative Research Areas, Section (II) / Electron device/Electronic equipment
Keywords	Principal Investigator 2次元材料 / 電界効果トランジスタ / TMDC / 先端機能デバイス / マイクロ・ナノデバイス / 自己組織化 / 絶縁膜転写 / 層状材料 / ナノ電子デバイス / 層状物質 … More / CMOSFET / WSe2 / CMOSデバイス / ナノ材料 / 表面・界面物性 / FET / 電子デバイス・機器 / ナノデバイス / 界面特性 / 二硫化モリブデン / 自己組織化単分子膜 … More Except Principal Investigator 新機能開拓 / デバイス応用 / 物性評価 / 薄膜合成 / 14族ナノシート / スピン量子ビット / 結合量子ドット / ナノワイヤ / 正孔スピン / 量子情報素子 / シリコンナノワイヤ / ナノシリコン量子ドット / Ge/Siコアシェルナノワイヤ / 界面欠陥のコヒーレント制御 / 3重量子ドット / スピンブロッケード / 量子ビット / 熱電素子 / コアシェルナノワイヤ / ナノ結晶シリコン / シリコン量子ドット Less

14族ナノシートに関する総括的研究
- Principal Investigator
  
  黒澤昌志
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Transformative Research Areas (B)
- Review Section
  
  Transformative Research Areas, Section (II)
- Research Institution
  Nagoya University
14族ナノシートのデバイス応用Principal Investigator
- Principal Investigator
  
  川那子高暢
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Transformative Research Areas (B)
- Review Section
  
  Transformative Research Areas, Section (II)
- Research Institution
  National Institute of Advanced Industrial Science and Technology
ゲート絶縁膜転写法を用いた2次元層状材料の界面制御とナノ電子デバイス応用Principal Investigator
- Principal Investigator
  
  川那子高暢
- Project Period (FY)
  2020 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Tokyo Institute of Technology
Two Dimensional Inorganic/Organic Hetero Interface for Normally Off MoS2 FETPrincipal Investigator
- Principal Investigator
  
  Kawanago Takamasa
- Project Period (FY)
  2017 – 2020
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology
Self-assembled monolayer-based gate dielectrics in MIS structure and its application to functional nano-electronic devicesPrincipal Investigator
- Principal Investigator
  
  Kawanago Takamasa
- Project Period (FY)
  2015 – 2016
- Research Category
  
  Grant-in-Aid for Research Activity Start-up
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology
Fabrication of NeoSilicon quantum information processing devices based on position control of silicon nano-dots and nanowires
- Principal Investigator
  
  Oda Shunri
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology

All 2024 2023 2022 2021 2020 2019 2018 2017 2016

All Journal Article Presentation Book

[Book] グラフェンから広がる二次元物質の新技術と応用2020
- Author(s)
  川那子高暢(分担執筆)
- Total Pages
  479
- Publisher
  エヌ・ティー・エス出版
- ISBN
  9784860436636
- Data Source
  KAKENHI-PROJECT-17K14662
[Book] 自己組織化有機単分子膜を用いた界面制御とゲート絶縁膜技術2018
- Author(s)
  川那子高暢
- Total Pages
  5
- Publisher
  応用物理　第87巻　第7号　511
- Data Source
  KAKENHI-PROJECT-17K14662
[Journal Article] Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact2023
- Author(s)
  Kawanago Takamasa、Kajikawa Ryosuke、Mizutani Kazuto、Tsai Sung-Lin、Muneta Iriya、Hoshii Takuya、Kakushima Kuniyuki、Tsutsui Kazuo、Wakabayashi Hitoshi
- Journal Title
  
  IEEE Journal of the Electron Devices Society
  
  Volume: 11 Pages: 15-21
- DOI
  10.1109/jeds.2022.3224206
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20K04616
[Journal Article] Experimental demonstration of high-gain CMOS inverter operation at low V <sub> dd </sub> down to 0.5 V consisting of WSe<sub>2</sub> n/p FETs2022
- Author(s)
  Kawanago Takamasa、Matsuzaki Takahiro、Kajikawa Ryosuke、Muneta Iriya、Hoshii Takuya、Kakushima Kuniyuki、Tsutsui Kazuo、Wakabayashi Hitoshi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: SC Pages: SC1004-SC1004
- DOI
  10.35848/1347-4065/ac3a8e
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20K04616
[Journal Article] Transfer printing of gate dielectric and carrier doping with poly(vinyl-alcohol) coating to fabricate top-gate molybdenum disulfide field-effect transistors2020
- Author(s)
  Kawanago Takamasa、Matsuzaki Takahiro、Oda Shunri
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: 12 Pages: 120903-120903
- DOI
  10.35848/1347-4065/abc6be
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20K04616
[Journal Article] Transfer printing of Al2O3 gate dielectric for fabrication of top-gate MoS2 FET2019
- Author(s)
  Takamasa Kawanago, Tomoaki Oba, Shunri Oda
- Journal Title
  
  Applied Physics Express
  
  Volume: 12 Issue: 2 Pages: 026501-026501
- DOI
  10.7567/1882-0786/aaf995
- NAID
  210000135571
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K14662
[Journal Article] Control of threshold voltage by gate metal electrode in molybdenum disulfide field-effect transistors2017
- Author(s)
  Kawanago Takamasa、Oda Shunri
- Journal Title
  
  Applied Physics Letters
  
  Volume: 110 Issue: 13 Pages: 133507-133507
- DOI
  10.1063/1.4979610
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K14662
[Journal Article] Use of self-assembled monolayers for selective metal removal and ultrathin gate dielectrics in MoS2 field-effect transistors2017
- Author(s)
  Wanjing Du, Takamasa Kawanago, and Shunri Oda
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 56 Issue: 4S Pages: 04CP10-04CP10
- DOI
  10.7567/jjap.56.04cp10
- NAID
  210000147672
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H06204
[Journal Article] Fabrication of hybrid self-assembled monolayer/hafnium oxide gate dielectric by radical oxidation for molybdenum disulfide field-effect transistors2017
- Author(s)
  Kawanago Takamasa、Ikoma Ryo、Oba Tomoaki、Takagi Hiroyuki
- Journal Title
  
  Applied Physics Letters
  
  Volume: 111 Issue: 20 Pages: 202904-202904
- DOI
  10.1063/1.4998313
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17K14662
[Journal Article] Utilizing self-assembled-monolayer-based gate dielectrics to fabricate molybdenum disulfide field-effect transistors2016
- Author(s)
  Takamasa Kawanago and Shunri Oda
- Journal Title
  
  APPLIED PHYSICS LETTERS
  
  Volume: 108 Issue: 4
- DOI
  10.1063/1.4941084
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H06204
[Presentation] 低電圧動作2次元半導体CMOSインバータの研究2024
- Author(s)
  川那子高暢
- Organizer
  二次元材料に関する第7回koineミーティング (学術変革領域研究(A)「2.5次元物質科学」第3回産学官協働ミーティング)
- Invited
- Data Source
  KAKENHI-PROJECT-20K04616
[Presentation] TMDCを用いたFETおよびLSIについて2024
- Author(s)
  川那子高暢, 宗田伊理也, 星井拓也, 角嶋邦之, 筒井一生, 若林整
- Organizer
  応用電子物性分科会2月研究例会
- Invited
- Data Source
  KAKENHI-PROJECT-20K04616
[Presentation] Self-Aligned WOx S/D Contacts to Gate Stacks with TiOx Nucleation Layer by Multiple-Deposition Method in WSe2 pFETs2023
- Author(s)
  Ryosuke Kajikawa, Takamasa Kawanago, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM) 2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K04616
[Presentation] トップゲートに自己整合したWOx S/Dを用いた30-50 nm膜厚WSe2バックチャネルpFET2023
- Author(s)
  梶川亮介、川那子高暢、宗田伊理也、星井拓也、角嶋邦之、筒井一生、若林整
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20K04616
[Presentation] Fabrication and Characterization of Self-Aligned WSe2 p-Type Field-Effect Transistor2023
- Author(s)
  Takamasa Kawanago, Ryosuke Kajikawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
- Organizer
  Electrochemical Society Meeting 243
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K04616
[Presentation] Low Voltage Operation of CMOS Inverter based on WSe2 n/p FETs2022
- Author(s)
  T. Kawanago
- Organizer
  242nd ECS Meeting, Atlanta, Georgia, USA, 12, Oct. 2022.
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K04616
[Presentation] アルミニウムスカンジウム合金をS/D電極に用いたWSe2 nFETの作製2022
- Author(s)
  梶川亮介, 川那子高暢, 角嶋邦之, 若林整
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20K04616
[Presentation] WSe2 n/p FETs を用いた低電圧動作CMOS インバータ2022
- Author(s)
  川那子高暢, 松﨑貴広, 梶川亮介, 宗田伊理也, 星井拓也, 角嶋邦之, 筒井一生, 若林整
- Organizer
  シリコン材料・デバイス研究会, 名古屋大学VBL No. 235, 2022年6月21日.
- Invited
- Data Source
  KAKENHI-PROJECT-20K04616
[Presentation] アルミニウムスカンジウム合金(AlSc)と酸化タングステン(WOx)をソース/ドレイン電極に用いたWSe2 n/p FETとCMOSインバータ応用2022
- Author(s)
  川那子高暢，梶川亮介，水谷一翔，Tsai SungLin, 宗田伊理也，星井拓也，角嶋邦之，筒井一生，若林整
- Organizer
  第83回応用物理学会秋季学術講演, 22a-B202-03, 東北大学, 2022年9月22日.
- Data Source
  KAKENHI-PROJECT-20K04616
[Presentation] Experimental demonstration of high-gain CMOS Inverter at low Vdd down to 0.5 V consisting of WSe2 n/p FETs2021
- Author(s)
  T. Kawanago, T. Matsuzaki, R. Kajikawa, I. Muneta, T. Hoshii, K. Kakushima, K. Tsutsui, H. Wakabayashi
- Organizer
  SSDM 2021
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K04616
[Presentation] 電源電圧0.5V動作の高ゲインWSe2 CMOSインバータの実証2021
- Author(s)
  川那子高暢，松﨑貴広，梶川亮介，宗田伊理也，星井拓也，角嶋邦之，筒井一生，若林整
- Organizer
  第82回応用物理学会秋季学術講演
- Data Source
  KAKENHI-PROJECT-20K04616
[Presentation] Impact of Contact Doping on Electrical Characteristics in WSe2 FET2020
- Author(s)
  T. Matsuzaki, T. Kawanago, S. Oda
- Organizer
  The Electrochemical Society PRiME 2020 (Online)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K04616
[Presentation] ゲート絶縁膜転写とPVAドーピングによるトップゲートMoS2 FET の作製2020
- Author(s)
  川那子高暢，松﨑貴広，小田俊理
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K14662
[Presentation] Fabrication of top-gate MoS2 FET with transferred Al2O3 gate dielectric2019
- Author(s)
  Takamasa Kawanago, Tomoaki Oba, Shunri Oda
- Organizer
  ECS 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14662
[Presentation] Al2O3ゲート絶縁膜転写法を用いたトップゲートMoS2 FETの作製2019
- Author(s)
  川那子高暢，大場智明，小田俊理
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K14662
[Presentation] PVA によるMoS2 FET へのキャリアドーピングと電気特性への影響2019
- Author(s)
  松﨑貴広, 大場智明，川那子高暢，小田俊理
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K14662
[Presentation] Polarity Control in WSe2 Field-Effect Transistors using Dual Gate Architecture2018
- Author(s)
  Hiroyuki Takagi, Ryo Ikoma, Tomoaki Oba, Takamasa Kawanago
- Organizer
  2nd Electron Devices Technology and Manufacturing (EDTM) Conference 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14662
[Presentation] SAMゲート絶縁膜を用いたMoS2 FETのチャネル移動度への影響2018
- Author(s)
  川那子高暢，大場智明，小田俊理
- Organizer
  第79回応用物理学会秋季学術講演
- Data Source
  KAKENHI-PROJECT-17K14662
[Presentation] 基板バイアス構造を用いたキャリア注入制御とWSe2FETの作製2018
- Author(s)
  川那子高暢, 高木寛之, 居駒遼, 大場智昭
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K14662
[Presentation] Two-dimensional inorganic/organic hetero interface for field-effect transistor applications2018
- Author(s)
  Takamasa Kawanago
- Organizer
  Recent Progress Graphene Research (RPGR) 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14662
[Presentation] Gated Four-Probe Method for Evaluation of Electrical Characteristics in MoS2 Field-Effect Transistors2018
- Author(s)
  Tomoaki Oba, Takamasa Kawanago, Shunri Oda
- Organizer
  Recent Progress Graphene Research (RPGR) 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14662
[Presentation] Two-dimensional inorganic/organic interface for field-effect transistor application2018
- Author(s)
  Takamasa Kawanago
- Organizer
  1st Workshop on Novel 2D Device & Materials Physics (2DMaP)
- Invited
- Data Source
  KAKENHI-PROJECT-17K14662
[Presentation] MoS2 FET fabricated by adhesion lithography2018
- Author(s)
  Takamasa Kawanago
- Organizer
  International Symposium 3RD Japan-EU Flagship Workshop on Graphene and Related 2D Materials 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14662
[Presentation] Gated Four-Probe Method to Evaluate the Impact of SAM Gate Dielectric on Mobility in MoS2 FET2018
- Author(s)
  Takamasa Kawanago, Tomoaki Oba, Ryo Ikoma, Hiroyuki Takagi, Shunri Oda
- Organizer
  ESSDERC 2018
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14662
[Presentation] 積層SAM/HfOxゲート絶縁膜を用いたMoS2 FETの作製2018
- Author(s)
  川那子高暢, 居駒遼, 大場智昭, 高木寛之
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K14662
[Presentation] 積層SAM/HfOxゲート絶縁膜を用いたMoS2 FETの作製2017
- Author(s)
  大場智昭, 居駒遼, 川那子高暢
- Organizer
  第７８回応用物理学会秋季学術講演
- Data Source
  KAKENHI-PROJECT-17K14662
[Presentation] Heavily-doped SOI Substrate and Transfer Printing for Charge Injection into2017
- Author(s)
  Ryo Ikoma, Takamasa Kawanago
- Organizer
  17th International Workshop on Junction Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14662
[Presentation] 自己組織化単分子膜を用いたadhesion lithographyによるMoS2 FETの作製2017
- Author(s)
  川那子高暢，居駒遼，Wanjing Du，小田俊理
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15H06204
[Presentation] Heavily-doped SOI with SAM-Based Gate Dielectrics in Application to TMDC FET2017
- Author(s)
  Ryo Ikoma, Takamasa Kawanago, Yukio Kawano
- Organizer
  232nd ECS MEETING
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14662
[Presentation] Radical Oxidation Process for Hybrid SAM/HfOx Gate Dielectrics in MoS2 FETs2017
- Author(s)
  Takamasa Kawanago, Ryo Ikoma, Tomoaki Oba, Hiroyuki Takagi
- Organizer
  47th European Solid-State Device Research Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14662
[Presentation] 剥離転写法による高濃度ドープSOI基板を用いたTMDC-FETの作製2017
- Author(s)
  居駒遼, 川那子高暢, 河野行雄
- Organizer
  第７８回応用物理学会秋季学術講演
- Data Source
  KAKENHI-PROJECT-17K14662
[Presentation] 濃度SOI基板をゲート電極に用いたWSe2pFETの作製2017
- Author(s)
  高木寛之, 居駒遼, 大場智昭, 川那子高暢
- Organizer
  第７８回応用物理学会秋季学術講演
- Data Source
  KAKENHI-PROJECT-17K14662
[Presentation] 高濃度SOI基板と転写法によるTMDC FETsの作製2017
- Author(s)
  川那子高暢、居駒遼、高木寛之、小田俊理
- Organizer
  SDM(シリコン材料・デバイス)研究会
- Data Source
  KAKENHI-PROJECT-17K14662
[Presentation] Transfer printing of nanostructured membrane with elastomeric stamp and its application to TMDC-based field-effect transistors2017
- Author(s)
  Takamasa Kawanago, Wanjing Du, Ryo Ikoma, Tomoaki Oba, Hiroyuki Takagi and Shunri Oda
- Organizer
  17th International Workshop on Junction Technology
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K14662
[Presentation] Adhesion Lithography to fabricate MoS2 FETs with Self-Assembled Monolayer-based Gate Dielectrics2016
- Author(s)
  Takamasa Kawanago, Ryo Ikoma, Du Wanjing, and Shunri Oda
- Organizer
  ESSDERC 2016
- Place of Presentation
  Lausanne, Switzerland
- Year and Date
  2016-09-12
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H06204
[Presentation] ジデシルホスホン酸(C12H25-PA)をゲート絶縁膜に用いたMoS2 FETの作製2016
- Author(s)
  居駒遼、川那子高暢、小田俊理
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ
- Data Source
  KAKENHI-PROJECT-15H06204
[Presentation] WSe2 P-type Transistors Fabricated by Self-Assembled Monolayer for Contact Metal Patterning and Ultrathin Gate Dielectrics2016
- Author(s)
  Wanjing Du, Takamasa Kawanago, and Shunri Oda
- Organizer
  SISC 2016
- Place of Presentation
  San Diego, CA
- Year and Date
  2016-12-07
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H06204
[Presentation] Adhesion lithography to fabricate MoS2 FETs with self-assembled monolayer-based gate dielectrics2016
- Author(s)
  T. Kawanago, R. Ikoma, W. Du, S. Oda
- Organizer
  ESSDERC 2016
- Place of Presentation
  Lausanne, Switherland
- Year and Date
  2016-09-12
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249048
[Presentation] Self-Assembled Monolayer-Based Gate Dielectrics for MoS2 FETs2016
- Author(s)
  T. Kawanago, S. Oda
- Organizer
  PRiME 2016/230th ECS Meeting
- Place of Presentation
  Honolulu, USA
- Year and Date
  2016-10-02
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249048
[Presentation] Multifunctional Phosphonic Acid Self-Assembled Monolayer for Metal Patterning and Ultrathin Gate Dielectrics in Fabrication of MoS2 Field-Effect Transistors2016
- Author(s)
  杜婉静, 川那子高暢, 小田俊理
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15H06204
[Presentation] Self-Assembled Monolayer-based Gate Dielectrics for MoS2 FET2016
- Author(s)
  Takamasa Kawanago, and Shunri Oda
- Organizer
  230th ECS Meeting
- Place of Presentation
  Honolulu, Hawaii
- Year and Date
  2016-10-02
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H06204
[Presentation] 自己組織化単分子膜をゲート絶縁膜に用いた低電圧駆動MoS2 FETの作製2016
- Author(s)
  川那子高暢、小田俊理
- Organizer
  応用物理学会シリコンテクノロジー分科会
- Place of Presentation
  東京工業大学田町キャンパス
- Year and Date
  2016-06-29
- Invited
- Data Source
  KAKENHI-PROJECT-15H06204
[Presentation] Using Self-Assembled Monolayers for Selective Metal Removing and Ultrathin Gate Dielectrics in MoS2 Field-Effect Transistors2016
- Author(s)
  Wanjing Du, Takamasa Kawanago, and Shunri Oda
- Organizer
  SSDM 2016
- Place of Presentation
  EPOCHAL TSUKUBA
- Year and Date
  2016-09-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15H06204
[Presentation] 自己組織化単分子膜をゲート絶縁膜に用いた低電圧駆動MoS2 FETの作製2016
- Author(s)
  川那子高暢，小田俊理
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15H06204

1. Oda Shunri (50126314)

# of Collaborated Projects: 2 results

# of Collaborated Products: 13 results
2. 小寺哲夫 (00466856)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. 河野行雄 (90334250)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. 黒澤昌志 (40715439)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. 安藤裕一郎 (50618361)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 洗平昌晃 (20537427)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. Ikoma Ryo

# of Collaborated Projects: 1 results

# of Collaborated Products: 3 results
8. MILNE W. I.

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. Williams D

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. Du Wanjing

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results

Kawanago Takamasa 川那子 高暢

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14族ナノシートに関する総括的研究

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14族ナノシートのデバイス応用Principal Investigator

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ゲート絶縁膜転写法を用いた2次元層状材料の界面制御とナノ電子デバイス応用Principal Investigator

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Two Dimensional Inorganic/Organic Hetero Interface for Normally Off MoS2 FETPrincipal Investigator

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Self-assembled monolayer-based gate dielectrics in MIS structure and its application to functional nano-electronic devicesPrincipal Investigator

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Fabrication of NeoSilicon quantum information processing devices based on position control of silicon nano-dots and nanowires

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[Book] グラフェンから広がる二次元物質の新技術と応用2020

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[Book] 自己組織化有機単分子膜を用いた界面制御とゲート絶縁膜技術2018

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[Journal Article] Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact2023

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[Journal Article] Experimental demonstration of high-gain CMOS inverter operation at low V <sub> dd </sub> down to 0.5 V consisting of WSe<sub>2</sub> n/p FETs2022

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[Journal Article] Transfer printing of gate dielectric and carrier doping with poly(vinyl-alcohol) coating to fabricate top-gate molybdenum disulfide field-effect transistors2020

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[Journal Article] Transfer printing of Al2O3 gate dielectric for fabrication of top-gate MoS2 FET2019

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[Journal Article] Control of threshold voltage by gate metal electrode in molybdenum disulfide field-effect transistors2017

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[Journal Article] Use of self-assembled monolayers for selective metal removal and ultrathin gate dielectrics in MoS2 field-effect transistors2017

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Kawanago Takamasa 川那子高暢