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CHANG WENHSIN  張 文馨

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Chang Wen Hsin  張 文馨

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Researcher Number 30796834
Other IDs
Affiliation (Current) 2025: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員
Affiliation (based on the past Project Information) *help 2023 – 2024: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員
2019 – 2020: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究員
Review Section/Research Field
Principal Investigator
Basic Section 21060:Electron device and electronic equipment-related
Keywords
Principal Investigator
Ge / 接触抵抗 / GeOI / GeOI (111) / vdW接合 / Bi2Te3 / Sb2Te3 / 三次元集積 / MOS / トランジスタ … More / 界面準位 / 半導体 / 半導体プロセス / HI / プラズマ / 原子層エッチング Less
  • Research Projects

    (2 results)
  • Research Products

    (2 results)
  • Co-Researchers

    (1 People)
  •  Precise Control of Ge Nanosheet Channel Structure and Investigation of Carrier Transport through vdW ContactsPrincipal Investigator

    • Principal Investigator
      張 文馨
    • Project Period (FY)
      2023 – 2025
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      National Institute of Advanced Industrial Science and Technology
  •  Development of low temperature Ge atomic layer etching for 3D integrationPrincipal Investigator

    • Principal Investigator
      Chang Wen Hsin
    • Project Period (FY)
      2019 – 2020
    • Research Category
      Grant-in-Aid for Early-Career Scientists
    • Review Section
      Basic Section 21060:Electron device and electronic equipment-related
    • Research Institution
      National Institute of Advanced Industrial Science and Technology

All 2020

All Journal Article Presentation

  • [Journal Article] Performance and reliability improvement in Ge(100) nMOSFETs through channel flattening process2020

    • Author(s)
      W. H. Chang, T. Irisawa, W. Mizubayashi, H. Ishii, and T. Maeda
    • Journal Title

      Solid-State Electronics

      Volume: 169 Pages: 107816-107816

    • DOI

      10.1016/j.sse.2020.107816

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K15053, KAKENHI-PROJECT-17H06148
  • [Presentation] HIプラズマ処理によるGe MOS界面特性の改善2020

    • Author(s)
      張文馨、入沢寿史、石井裕之、前田辰郎
    • Organizer
      2020秋応用物理学会
    • Data Source
      KAKENHI-PROJECT-19K15053
  • 1.  齊藤 雄太 (50738052)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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