Zhang Xufang 張旭芳

Researcher Number	30857404
Other IDs
Affiliation (based on the past Project Information) *help	2020 – 2022: 金沢大学, ナノマテリアル研究所, 特任助教
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related
Keywords	Principal Investigator interface / Interface / diamond / Al2O3 / チャネル移動度 / 界面準位 / ダイヤモンドMOS / Characterization / Electrical property / Al2O3/diamond interface / Diamond inversion MOSFET / MOS

Atomic structure elucidation and modulation for Al2O3/diamond interfacePrincipal Investigator
- Principal Investigator
  
  張旭芳
- Project Period (FY)
  2022
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Kanazawa University
Limiting factor elucidation of channel mobility in inversion-type p-channel diamond MOSFETsPrincipal Investigator
- Principal Investigator
  
  Zhang Xufang
- Project Period (FY)
  2020 – 2021
- Research Category
  
  Grant-in-Aid for Early-Career Scientists
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Kanazawa University

All 2022 2021 2020

All Journal Article Presentation

[Journal Article] Inversion-type p-channel diamond MOSFET issues2021
- Author(s)
  Xufang Zhang, Tsubasa Matsumoto, Satoshi Yamasaki, Christoph E. Nebel, Takao Inokuma, and Norio Tokuda
- Journal Title
  
  Journal of Materials Research
  
  Volume: 36 Issue: 23 Pages: 4688-4702
- DOI
  10.1557/s43578-021-00317-z
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K14773, KAKENHI-PROJECT-18KK0383
[Journal Article] Inversion channel MOSFET on heteroepitaxially grown free-standing diamond2021
- Author(s)
  Zhang Xufang、Matsumoto Tsubasa、Nakano Yuta、Noguchi Hitoshi、Kato Hiromitsu、Makino Toshiharu、Takeuchi Daisuke、Ogura Masahiko、Yamasaki Satoshi、Nebel Christoph E.、Inokuma Takao、Tokuda Norio
- Journal Title
  
  Carbon
  
  Volume: 175 Pages: 615-619
- DOI
  10.1016/j.carbon.2020.11.072
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18KK0383, KAKENHI-PROJECT-19K15042, KAKENHI-PROJECT-20K14773
[Journal Article] Insight into Al2O3/diamond interface states with high-temperature conductance method2020
- Author(s)
  Xufang Zhang, Tsubasa Matsumoto, Ukyo Sakurai, Toshiharu Makino, Masahiko Ogura, Mitsuru Sometani, Satoshi Yamasaki, Christoph E. Nebel, Takao Inokuma, and Norio Tokuda
- Journal Title
  
  Applied Physics Letters
  
  Volume: 117 Issue: 9 Pages: 092104-092104
- DOI
  10.1063/5.0021785
- Peer Reviewed / Open Access / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K14773, KAKENHI-PROJECT-18KK0383, KAKENHI-PROJECT-19K15042
[Journal Article] Energy distribution of Al2O3/diamond interface states characterized by high temperature capacitance-voltage method2020
- Author(s)
  Xufang Zhang, Tsubasa Matsumoto, Ukyo Sakurai, Toshiharu Makino, Masahiko Ogura, Satoshi Yamasaki, Mitsuru Sometani, Dai Okamoto, Hiroshi Yano, Noriyuki Iwamuro, Takao Inokuma, and Norio Tokuda
- Journal Title
  
  CARBON
  
  Volume: 168 Pages: 659-664
- DOI
  10.1016/j.carbon.2020.07.019
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20K14773, KAKENHI-PROJECT-18KK0383, KAKENHI-PROJECT-19K15042
[Presentation] Impact of wet annealing treatments on Al2O3/diamond MOS interface2022
- Author(s)
  X. Zhang, T. Matsumoto , M. Sometani, M. Ogura, T. Makino, D. Takeuchi, C.E. Nebel, T. Inokuma, S. Yamasaki, and N. Tokuda
- Organizer
  New Diamond and Nano Carbons 2022
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K14287
[Presentation] Electrical characterization of Al2O3/diamond MOS interface under various wet-annealing times2022
- Author(s)
  X. Zhang, T. Matsumoto , M. Sometani, M. Ogura, T. Makino, D. Takeuchi, C.E. Nebel, T. Inokuma, S. Yamasaki, and N. Tokuda
- Organizer
  The 83rd JSAP Autumn Meeting 2022
- Data Source
  KAKENHI-PROJECT-22K14287
[Presentation] Recent Progress in Electrical Characterization of Al2O3/Diamond Interface2022
- Author(s)
  X. Zhang, T. Matsumoto , M. Sometani, M. Ogura, T. Makino, D. Takeuchi, C.E. Nebel, T. Inokuma, S. Yamasaki, and N. Tokuda
- Organizer
  14th Topical Workshop on Heterostructure Microelectronics
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K14287
[Presentation] High-temperature conductance analysis for Al2O3/diamond interface states2021
- Author(s)
  Xufang Zhang, Tsubasa Matsumoto, Toshiharu Makino, Masahiko Ogura, Mitsuru Sometani, Dai Okamoto, Noriyuki Iwamuro, Satoshi Yamasaki, Christoph E. Nebel, Takao Inokuma, and Norio Tokuda
- Organizer
  IWDTF
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K14773
[Presentation] Deep Interface Trap Analysis for Al2O3/Diamond MOS Structure by High-temperature Conductance Method2021
- Author(s)
  Xufang Zhang, Tsubasa Matsumoto, Ukyo Sakurai, Toshiharu Makino, Masahiko Ogura, Satoshi Yamasaki, Mitsuru Sometani, Dai Okamoto, Hiroshi Yano, Noriyuki Iwamuro, Takao Inokuma, and Norio Tokuda
- Organizer
  NDNC
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K14773
[Presentation] Deep Interface Trap Analysis for Al2O3/Diamond MOS Structure by High-temperature Conductance Method2020
- Author(s)
  Xufang Zhang
- Organizer
  NDNC
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20K14773

1. TOKUDA Norio

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Zhang Xufang 張 旭芳

Research Projects

Research Products

Co-Researchers

Atomic structure elucidation and modulation for Al2O3/diamond interfacePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Limiting factor elucidation of channel mobility in inversion-type p-channel diamond MOSFETsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] Inversion-type p-channel diamond MOSFET issues2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Inversion channel MOSFET on heteroepitaxially grown free-standing diamond2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Insight into Al2O3/diamond interface states with high-temperature conductance method2020

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Energy distribution of Al2O3/diamond interface states characterized by high temperature capacitance-voltage method2020

Author(s)

Journal Title

DOI

Data Source

[Presentation] Impact of wet annealing treatments on Al2O3/diamond MOS interface2022

Author(s)

Organizer

Data Source

[Presentation] Electrical characterization of Al2O3/diamond MOS interface under various wet-annealing times2022

Author(s)

Organizer

Data Source

[Presentation] Recent Progress in Electrical Characterization of Al2O3/Diamond Interface2022

Author(s)

Organizer

Data Source

[Presentation] High-temperature conductance analysis for Al2O3/diamond interface states2021

Author(s)

Organizer

Data Source

[Presentation] Deep Interface Trap Analysis for Al2O3/Diamond MOS Structure by High-temperature Conductance Method2021

Author(s)

Organizer

Data Source

[Presentation] Deep Interface Trap Analysis for Al2O3/Diamond MOS Structure by High-temperature Conductance Method2020

Author(s)

Organizer

Data Source

Zhang Xufang 張旭芳