SAWADA Takayuki 澤田孝幸

… Alternative Names

澤田孝幸サワダタカユキ

沢田孝幸

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Researcher Number	40113568
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2008 – 2010: 北海道工業大学, 創生工学部, 教授 2004 – 2006: 北海道工業大学, 工学部, 教授 1998 – 2001: 北海道工業大学, 工学部, 教授 1996 – 1997: 北海道工業大学, 工学部・応用電子工学科, 教授 1994 – 1995: 北海道工業大学, 工学部, 教授 … More 1994 – 1995: 北海道工業大学, 応用電子工学科, 教授 1992 – 1994: Hokkaido University,Research Center for Interface Quantum Electronics, Professor, 量子界面エレクトロニクス研究センター, 教授 1991: 北海道大学, 量子界面エレクトニクス研究センター, 教授 1991: The Univ. of Electro-Commun. Associate professor, 量子界面エレクトロニクスセンター, 教授 1990: 電気通信大学, 電子工学科, 助教授 1988 – 1989: 電気通信大学, 電気通信学部, 助教授 1986: 北海道大学, 工学部, 助手 Less
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / 物理計測・光学 / Applied materials science/Crystal engineering / Applied materials Except Principal Investigator Electronic materials/Electric materials / Applied materials science/Crystal engineering / Applied materials science/Crystal engineering / Applied materials / 電子材料工学
Keywords	Principal Investigator BSO / GaN / ショットキーダイオード / 界面準位密度 / Schottky Diode / AlGaN / 光屈折結晶 / GaP / 熱刺激電流 / 光位相共役波 … More / Photorefractive Crystal / Thermally Stimulated Current / Phase Conjugate Wave / MISダイオード / I-V-T特性 / I-V特性 / MIS Diode / GaNヘテロ構造 / GaN Heterostructure / Interface State Density / バンド輸送モデル / 屈折率格子 / 光パルス応答 / 光屈折効果 / 過渡光電流 / 4準位モデル / Band Transport Model / Index Grating / Transient Response / ショットキー障壁高 / C-V特性 / フェルミ準位 / Interface state density / Schottkv Barrier Height / I-V-T Characteristics / C-V Characteristics / Fermi Level / ショットキー障壁高さ / 表面フェルミ準位 / 陽極エッチング / 界面特性 / 電流-電圧特性 / I-V-T characteristics / Schottky Barrier Height / Surface Fermi Level / 2次元電子ガス / ゲートリーク電流 / HEMTデバイス / MBE成長 / MIS構造 / A1GaN / 2-Dimensional Electron Gas / Gate Leakage Current / HEMT Device / MBE Growth / MIS Structures / 不純物準位 / 空間電荷層 / ダイナミックホログラム / 画像記録 / 位相共役波 / 旋光性 / 光電流 / 2光波混合 / Space Charge Layer / Deep Impurity Level / Image Processing / Diffraction Efficiency … More Except Principal Investigator II-VI族半導体 / 超格子 / MBE成長 / 半導体 / ZnSe-ZnTe超格子 / Type-IIバンド構造 / フォトルミネセンス / 界面準位 / Photoluminescence / InGaAs / InAlAs / ZnSe / II-VI semiconductors / MBE / 光強度変調 / 超短光共振器 / マイクロキャビティレ-ザ- / 自然放出制御 / 超短光共振器の有効面積 / 超短共振器レ-ザ- / 有効断面積 / 超短共振器長測定法 / Very short optical cavity / Microcavity laser / Controlled spontaneous emission / Effective area of a very short optical cavity / 量子構造 / 化合物半導体 / 表面・界面準位 / 界面制御層 / 量子井戸 / 表面不活性化 / 界面制御 / 量子細線 / 表面準位 / 表面電気伝導 / Quantum structure / Compound semiconductor / Surface / interface stete / Interface control / Quantum well / Surface passivation / 加工基板 / 微傾斜基板 / 結晶成長 / 多段原子ステップ / 量子ドット / 表面超格子 / 電子波干渉 / Semiconductor / Patterned Substrate / Vicinal Substrate / Crystal Growth / Multiatomic Step / Quantum Dot / Lateral Surface Superlattice / Electron Interference / 表面再結合速度 / 界面準位密度 / 太陽電池 / InAsドット / 高濃度ドープ層 / 電極界面再結合 / Stranski-Krastanow成長 / インジウムガリウム砒素 / インジウムアルミニウム砒素 / 再成長 / Surface recombination velocity / Interface state density / Solar cell / InAs dot / 励起子 / Excitions / Interface states / 波長変換 / ZnSeTe / 歪超格子 / 光変調 / superlattices / Light wavelenght conversion / Type-IIバンド / 光up-conversion / II-VI compound semiconductor / superlattice / Type-II band structure / MBE growth / プラズマCVD / 低周波 / デポジション / シリコン窒化膜 / 室温プロセス / 絶縁薄膜 / 表面保護膜 / ドライプロセス / 低周波プラズマ / 低温プロセス / シラン窒素混合ガス / 層間絶縁膜 / 最終保護膜 / Plasma CVD / Silicon nitride / Low frequency(50Hz) / Low temterature process / Thin film deposition / Interiayer insulation / Device surface passivation Less

Light modulation driven by light of dual sub-bands
- Principal Investigator
  
  IMAI Kazuaki
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Hokkaido Institute of Technology
Suppression of Gate Leakage Current in AlGaN/GaN Heterostructures and Polarity-Controlled MBE Growth of GaN-Based SemiconductorsPrincipal Investigator
- Principal Investigator
  
  SAWADA Takayuki
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Hokkaido Institute of Technology
Light up-conversion mechanism of type-II dual sub-band superlattices
- Principal Investigator
  
  IMAI Kazuaki
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Hokkaido Institute of Technology
Characterization and Control of GaN-based semiconductor interfaces for Fabrication of Field Effect TransistorsPrincipal Investigator
- Principal Investigator
  
  SAWADA Takayuki
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido Institute of Technology
Light up-conversion effects of ZnSeTe strained superlattices
- Principal Investigator
  
  IMAI Kazuaki
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Hokkaido Institute of Tecnology
Characterization and Control of Metal/GaN and Insulator/GaN Interfaces for Fabrication of MIS Field Effect TransistorsPrincipal Investigator
- Principal Investigator
  
  SAWADA Takayuki
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido Institute of Technology
Exciton Dynamics in CdZnTeSe Quaternary Alloys
- Principal Investigator
  
  IMAI Kazuaki
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Hokkaido Institute of Technology
Fabrication of Ultrasmall Compound Semiconductor Nanostructures with Controlled Interfaces and Characterization of Their Electronic Properties
- Principal Investigator
  
  MOTOHISA Junichi
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
Study on Supcr-High Efficicncy InGaAs/InP Solar Ccll With Controlled Surface
- Principal Investigator
  
  SAITOH Toshiya
- Project Period (FY)
  1994 – 1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Characterization and Control of Interaction between Quantized Energy Levels and Surface/Interface States in Compound Semiconductor Quantum Structures.
- Principal Investigator
  
  HASEGAWA Hideki
- Project Period (FY)
  1993 – 1994
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Transient Response of Photorefractive Grating in BSO and GaP by Short Light PulsePrincipal Investigator
- Principal Investigator
  
  SAWADA Takayuki
- Project Period (FY)
  1991 – 1992
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  物理計測・光学
- Research Institution
  Hokkaido University
Research on Control of Spontaneous Emission in a Laser with Very Short Cavity
- Principal Investigator
  
  UJIHARA Kikuo
- Project Period (FY)
  1990 – 1991
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  Applied materials
- Research Institution
  The University of Electro-Communications
Electrical and Optical Characterization of BSO Photorefractive CrystalsPrincipal Investigator
- Principal Investigator
  
  SAWADA Takayuki
- Project Period (FY)
  1988 – 1989
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  Applied materials
- Research Institution
  University of Electro-Communications
Deveiopment of Room Temperature Deposition Process of Silicon Nitride Film by Low Frequency Plasma CVD.
- Principal Investigator
  
  SHIMOZUMA Mitsuo
- Project Period (FY)
  1986 – 1987
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research
- Research Field
  
  電子材料工学
- Research Institution
  College of Medical Technology, Hokkaido University

All 2010 2009 2008 2007 2006 2005 2004

All Journal Article Presentation

[Journal Article] 光透過型ZnSe-ZnTe超格子の評価について2010
- Author(s)
  本間一臣、一戸善弘、高橋和也、山本泰輔、今井和明、澤田孝幸、鈴木和彦、木村信行、木村尚仁
- Journal Title
  
  北海道工業大学研究紀要 vol.38
  
  Pages: 137-142
- Data Source
  KAKENHI-PROJECT-20560013
[Journal Article] 光透過型ZnSe-ZnTe超格子の評価について2010
- Author(s)
  本間一臣、一戸善弘、高橋和也、山本泰輔、今井和明、澤田孝幸、鈴木和彦、木村信行、木村尚仁
- Journal Title
  
  北海道工業大学研究紀要
  
  Volume: 38 Pages: 137-142
- Data Source
  KAKENHI-PROJECT-20560013
[Journal Article] MBE-ZnSeTe混晶の光学的評価2010
- Author(s)
  高橋和也、一戸善弘、本間一臣、今井和明、鈴木和彦、澤田孝幸、木村信行、木村尚仁
- Journal Title
  
  北海道工業大学研究紀要 vol.38
  
  Pages: 97-102
- Data Source
  KAKENHI-PROJECT-20560013
[Journal Article] RF-MBE InN膜成長における窒素プラズマ照射の影響2010
- Author(s)
  山本泰輔、本間一臣、澤田孝幸、今井和明、木村尚仁
- Journal Title
  
  北海道工業大学研究紀要
  
  Volume: 38 Pages: 143-148
- NAID
  40017157902
- Data Source
  KAKENHI-PROJECT-20560013
[Journal Article] RF-MBE InN膜成長における窒素プラズマ照射の影響2010
- Author(s)
  山本泰輔、本間一臣、澤田孝幸、今井和明、木村尚仁
- Journal Title
  
  北海道工業大学研究紀要 vol.38
  
  Pages: 143-148
- NAID
  40017157902
- Data Source
  KAKENHI-PROJECT-20560013
[Journal Article] MBE-ZnSeTe混晶の光学的評価2010
- Author(s)
  高橋和也、一戸善弘、本間一臣、今井和明、鈴木和彦、澤田孝幸、木村信行、木村尚仁
- Journal Title
  
  北海道工業大学研究紀要
  
  Volume: 38 Pages: 97-102
- Data Source
  KAKENHI-PROJECT-20560013
[Journal Article] Optical properties of ZnSe on GaN (0001) grown by MBE2009
- Author(s)
  Y.Ichinohe, K.Kyoh, K.Honma, T.Sawada, K.Suzuki, No.Kimura, Na.Kimura, K.Imai
- Journal Title
  
  J.Cryst.Growth 311
  
  Pages: 2106-2108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560013
[Journal Article] Optical properties of ZnSe on GaN (0001) grown by MBE2009
- Author(s)
  Y.Ichinohe, K. Kyoh, K.Honma, T.Sawada, K.Suzuki, No.Kimura, Na.Kimura, K.Imai
- Journal Title
  
  J.Cryst.Growth vol.311
  
  Pages: 2106-2108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560013
[Journal Article] In_xGa_<1-x>As結晶基板上へのZnSeのMBE成長2009
- Author(s)
  本間一臣、共佳、一戸善弘、今井和明、澤田孝幸、鈴木和彦、木村信行、木村尚仁
- Journal Title
  
  北海道工業大学研究紀要 vol.37
  
  Pages: 219-222
- Data Source
  KAKENHI-PROJECT-20560013
[Journal Article] The de-oxidation of a ZnTe surface by hydrogen treatment2009
- Author(s)
  K. Kyoh, Y.Ichinohe, K.Honma, Na.Kimura, No.Kimura, T.Sawada, K.Suzuki, K.Imai, H. Saito, Yu. V. Korostelin
- Journal Title
  
  J.Cryst.Growth vol.311
  
  Pages: 2096-2098
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560013
[Journal Article] MBE-ZnTe/GaAsの水素による表面処理2009
- Author(s)
  共佳、一戸善弘、本間一臣、今井和明、澤田孝幸、鈴木和彦、木村信行、木村尚仁
- Journal Title
  
  北海道工業大学研究紀要 vol.37
  
  Pages: 279-283
- Data Source
  KAKENHI-PROJECT-20560013
[Journal Article] The de-oxidation of a ZnTe surface by hydrogen treatment2009
- Author(s)
  K.Kyoh, Y.Ichinohe, K.Honma, Na.Kimura, No.Kimura, T.Sawada, K.Suzuki, K.Imai, H.Saito, Yu.V.Korostelin
- Journal Title
  
  J.Cryst.Growth 311
  
  Pages: 2096-2098
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560013
[Journal Article] Photoluminescence of periodic alloy of ZnSeTe grown by MBE2008
- Author(s)
  G. Shigaura, M. Kanamori, Y.Ichinohe, K. Kyoh, K.Honma, Na.Kimura, No.Kimura, T.Sawada, K.Suzuki, K.Imai
- Journal Title
  
  J.Korean Phys.Soc. vol.53
  
  Pages: 179-182
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560013
[Journal Article] Influence of surface preparation and i-AlGaN thickness on electrical properties of i-AlGaN/GaN heterostructures2008
- Author(s)
  T.Sawada, K.Takahashi, K.Imai, K.Suzuki, N.Kimura, K. Kitamori
- Journal Title
  
  phys.stat.sol.(c) vol.5
  
  Pages: 1695-1698
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560013
[Journal Article] MBE growth of ZnSe films on lattice matched In_xGa_<1-x>As substrate2008
- Author(s)
  T. Karita, K.Suzuki, Y.Ichinohe, S. Seto, T.Sawada, K.Imai
- Journal Title
  
  J.Korean Phys.Soc. vol.53
  
  Pages: 150-153
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560013
[Journal Article] Photoluminescence of modulation doped ZnSe : Te grown by MBE2008
- Author(s)
  G. Shigaura, Y.Ichinohe, M. Kanamori, K. Kyoh, K.Honma, Na.Kimura, No.Kimura, T.Sawada, K.Suzuki, K.Imai
- Journal Title
  
  J.Korean Phys.Soc. vol.53
  
  Pages: 2901-2904
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560013
[Journal Article] Influence of surface preparation and i-AlGaN thickness on electrical properties of i-AlGaN/GaN heterostructures2008
- Author(s)
  T. Sawada, et al.
- Journal Title
  
  phys. stat. sol. (c) 5
  
  Pages: 1695-1698
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20560013
[Journal Article] Suppression of Gate Leakage Current in i-AlGaN/GaN Heterostructure by Insertion of Anodic Al_2O_3 Layer and Influence of Thermal Annealing on Channel Electrons2007
- Author(s)
  T.Sawada
- Journal Title
  
  Proc. of Int. Workshop on Nitride Semiconductors (phys. stat. sol. (c)) Vol.4
  
  Pages: 4-4
- Data Source
  KAKENHI-PROJECT-17560013
[Journal Article] Suppression of Gate Leakage Current in i-AlGaN/GaN Hetero-structures by Insertion of Anodic Al_2O_3 Layer and Influence of Thermal Annealing on Channel Electrons2007
- Author(s)
  T.Sawada
- Journal Title
  
  phys. stat. sol. (c) Vol.4・No.7
  
  Pages: 2686-2689
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560013
[Journal Article] Suppression of Gate Leakage Current in i-AlGaN/GaN Heterostructures by Insertion of Anodic Al_2O_3 Layer and Influence of Thermal Annealing on Channel Electrons2007
- Author(s)
  T.Sawada
- Journal Title
  
  phys. stat. sol. (c) Vol.4-No.7
  
  Pages: 2686-2689
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560013
[Journal Article] Electrical Properties of Ni/i-A1GaN/GaN Structures and Influence of Thermal Annealing2006
- Author(s)
  T.Sawada
- Journal Title
  
  Proc.of 6th Int.Conf.on Nitride Semiconductors (Phys.Stat.Sol.) (掲載予定)(未定)
- Data Source
  KAKENHI-PROJECT-17560013
[Journal Article] Electrical Properties of Ni/i-AlGaN/GaN Structures and Influence of Thermal Annealing2006
- Author(s)
  T.Sawada
- Journal Title
  
  phys. stat. sol. (c) Vol.3-No.6
  
  Pages: 1704-1708
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560013
[Journal Article] Electrical properties of Ni/i-AlGaN/GaN structures and influence of thermal annealing2006
- Author(s)
  T.Sawada, N.Kimura, K.Suzuki, K.Imai, S.-W.Kim, T.Suzuki
- Journal Title
  
  phys. stat. sol.(c) Vol.3,No.6
  
  Pages: 1704-1708
- Data Source
  KAKENHI-PROJECT-16560015
[Journal Article] Effects of sub-gap irradiation on the time-of flight current waveforms of high resistivity CdTe2006
- Author(s)
  K.Suzuki, S.Seto, T.Sawada, K.Imai
- Journal Title
  
  phys. stat. sol.(c) Vol.3
  
  Pages: 1130-1134
- Data Source
  KAKENHI-PROJECT-16560015
[Journal Article] Electrical properties of Ni/i-AlGaN/GaN structures and influence of thermal annealing2006
- Author(s)
  T.Sawada et al.
- Journal Title
  
  phys. stat. sol. (c) vol. 3, no. 6
  
  Pages: 1704-1708
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560015
[Journal Article] Electrical Properties of Ni/i-AlGaN/GaN Structures and Influence of Thermal Annealing2006
- Author(s)
  T.Sawada
- Journal Title
  
  phys. stat. sol. (c) Vol.3・No.6
  
  Pages: 1704-1708
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560013
[Journal Article] Electrical properties of Ni/i-AlGaN/GaN structures and influence of thermal annealing2006
- Author(s)
  T.Sawada et al.
- Journal Title
  
  phys. stat. sol. (c) vol.3,No.6
  
  Pages: 1704-1708
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560015
[Journal Article] Ni/i-AlGaN/GaNゲート構造の電気的特性評価と熱処理の影響2005
- Author(s)
  澤田孝幸
- Journal Title
  
  電子情報通信学会技術研究報告 ED2005-135
  
  Pages: 79-84
- NAID
  110003501729
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17560013
[Journal Article] Electrical Properties of Ni/i-AlGaN/GaN Gate Structures and Influence of Thermal Annealing (in Japanese)2005
- Author(s)
  T.Sawada
- Journal Title
  
  Technical Report of IEICE ED2005-135
  
  Pages: 79-84
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17560013
[Journal Article] Interpretation of current transport properties at Ni/n-GaN Shottoky interfaces2004
- Author(s)
  T.Sawada et al.
- Journal Title
  
  J.Vac.Sci.Tech.B vol.22,No.4
  
  Pages: 2051-2058
- Data Source
  KAKENHI-PROJECT-16560015
[Journal Article] Interpretation of current transport properties at Ni/n-GaN Shottoky interfaces2004
- Author(s)
  T.Sawada et al.
- Journal Title
  
  J. Vac. Sci. Tech. B vol.22,No.4
  
  Pages: 2051-2058
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560015
[Journal Article] Interpretation of current transport properties at Ni/n-GaN Shottoky interfaces2004
- Author(s)
  T.Sawada et al.
- Journal Title
  
  J. Vac. Sci. Tech. B vol. 22, no. 4
  
  Pages: 2051-2058
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560015
[Presentation] ZnSe-ZnTe DSB構造混晶の光による光スイッチングについて2010
- Author(s)
  高橋和也、山本泰輔、阿部誠、木村尚仁、木村信行、澤田孝幸、鈴木和彦、今井和明
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎市
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-20560013
[Presentation] RF-MBE法によるGaNバッファ層上InN膜の成長2010
- Author(s)
  山本泰輔、澤田孝幸、今井和明、木村尚仁
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎市
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-20560013
[Presentation] Light switching driven by light of ZnSe-ZnTe dual sub-band superlattices2010
- Author(s)
  K. Takahashi, K.Honma, T. Yamamoto, M. Abe, Na.Kimura, No.Kimura, T.Sawada, K.Suzuki, K.Imai
- Organizer
  The 16th Int'l.Conf.on MBE
- Place of Presentation
  Berlin, Germany
- Data Source
  KAKENHI-PROJECT-20560013
[Presentation] ZnSe-ZnTe歪超格子のエネルギーバンド2009
- Author(s)
  一戸善弘、本間一臣、今井和明、澤田孝幸、鈴木和彦、木村信行、木村尚仁
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山市
- Year and Date
  2009-09-08
- Data Source
  KAKENHI-PROJECT-20560013
[Presentation] 光透過型ZnSe-ZnTeDSB超格子の評価2009
- Author(s)
  本間一臣、一戸善弘、高橋和也、山本泰輔、今井和明、木村尚仁、木村信行、澤田孝幸、鈴木和彦
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山市
- Year and Date
  2009-09-08
- Data Source
  KAKENHI-PROJECT-20560013
[Presentation] 光透過型ZnSe-ZnTe DSB超格子の評価2009
- Author(s)
  本間一臣、一戸義弘、高橋和也、山本泰輔、今井和明、木村尚仁、木村信行、澤田孝幸、鈴木和彦
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山市
- Year and Date
  2009-09-08
- Data Source
  KAKENHI-PROJECT-20560013
[Presentation] ZnSe-ZnTe超格子の波長変換効果と電子バンド構造2009
- Author(s)
  一戸善弘、共佳、本間一臣、今井和明、澤田孝幸、鈴木和彦、木村信行、木村尚仁
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  つくば市
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-20560013
[Presentation] De-oxidation of ZnTe surface by hydrogen treatment2008
- Author(s)
  今井和明, 共佳, 一戸善弘, 本間一臣, 木村尚仁, 木村信行, 澤田孝幸, 鈴木和彦
- Organizer
  The 15th Int'l.Conf.on MBE
- Place of Presentation
  Vancouver, Canada
- Data Source
  KAKENHI-PROJECT-20560013
[Presentation] ZnTeの水素による表面処理III2008
- Author(s)
  共佳、一戸善弘、本間一臣、今井和明、澤田孝幸、鈴木和彦、木村信行、木村尚仁
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  春日井市
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-20560013
[Presentation] Optical properties of ZnSe on GaN (0001)by MBE2008
- Author(s)
  Y.Ichinohe, K.Kyoh, K.Honma, T.Sawada, K.Suzuki, No.Kimura, Na.Kimura, K.Imai
- Organizer
  The 15th Int'l.Conf.on MBE
- Place of Presentation
  Vancouver, Canada
- Data Source
  KAKENHI-PROJECT-20560013

1. IMAI Kazuaki (40001987)

# of Collaborated Projects: 4 results

# of Collaborated Products: 28 results
2. SUZUKI Kazuhiko (30226500)

# of Collaborated Projects: 4 results

# of Collaborated Products: 25 results
3. UJIHARA Kikuo (90017351)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
4. KITAMORI Kazutaka (40153134)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
5. SAITOH Toshiya (70241396)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
6. KIMURA Nobuyuki (10204984)

# of Collaborated Projects: 2 results

# of Collaborated Products: 26 results
7. AKAZAWA Masamichi (30212400)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
8. HASEGAWA Hideki (60001781)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. MOTOHISA Junichi (60212263)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. YOH Kanji (60220539)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. SHIMOZUMA Mitsuo (70041960)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. OHNO Hideo (00152215)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. TAGASHIRA Hiroaki (10001174)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. OHMORI Yoshiyuki

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

SAWADA Takayuki 澤田 孝幸

澤田 孝幸 サワダ タカユキ

沢田 孝幸

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Suppression of Gate Leakage Current in AlGaN/GaN Heterostructures and Polarity-Controlled MBE Growth of GaN-Based SemiconductorsPrincipal Investigator

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Characterization and Control of GaN-based semiconductor interfaces for Fabrication of Field Effect TransistorsPrincipal Investigator

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Characterization and Control of Metal/GaN and Insulator/GaN Interfaces for Fabrication of MIS Field Effect TransistorsPrincipal Investigator

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Transient Response of Photorefractive Grating in BSO and GaP by Short Light PulsePrincipal Investigator

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Electrical and Optical Characterization of BSO Photorefractive CrystalsPrincipal Investigator

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SAWADA Takayuki 澤田孝幸

澤田孝幸サワダタカユキ

沢田孝幸