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SAKAI Kazufumi  坂井 一文

ORCIDConnect your ORCID iD *help
Researcher Number 40205703
Affiliation (based on the past Project Information) *help 1992: 学習院大学, 理学部, 助手
1988 – 1989: Department of Physics, Gakushuin University, 理学部, 助手
Review Section/Research Field
Except Principal Investigator
Applied materials
Keywords
Except Principal Investigator
格子欠陥 / 光散乱 / SIMOX / intrinsic gettering / denuded zone / 赤外線散乱 / 光散乱トモグラフィー / CHARACTERIZATION OF WAFERS / LATTICE DEFECTS / LIGHT SCATTERING … More / ION-IMPLANTATION / EPITAXIAL LAYER / SEMICONDUCTOR / イオン注入量の測定 / イオン注入層の評価 / 表面観察 / 赤外線暗視野顕微鏡法 / エピタクシャル膜 / ウエハ-の評価 / イオン注入 / エピタクシャル成長膜 / 半導体 / Crystal Growth / Lattice defects / Compound Semiconductors / Resonance Scattering / Infrared Light Scattering / 画像処理 / 結晶成長 / 化合物半導体 / 共鳴散乱 / diffraction of light / multi-quantum layr / GaAs wafer / Cz-Si / Si wafer / チタン・サファイャー・レーザ / 半導体レーザー / 固体表面状態 / 超薄膜干渉縞 / 干渉縞 / Device Technology / Liquid Crystal Display / Integrated Circuits / Surface Roughness / Diffraction / Interference Fringes / 面の粗さ / 光の回折 / 多重量子井戸構造積層膜 / 高温超伝導被膜の均質性 / 析出酸化物微粒子の粒径 / CZ-Siウエハ- / EL2 center / dislocation / lattice defects / tomography (LST) / ZnSe single crystal / GaAs single crystal / silicon wafers / semiconductors / 結晶欠陥 / 非接触検査 / 非破壊検査 / 半導体ウエハー / Brewster角照明 / Characterization / Semiconductors / Defects in Crystals / Light Scattering / イントリンシック・ゲッタリング / 赤外線 / シリコン・ウエハ- / 転位組織 / セレン化亜鉛単結晶 / 砒化カリュゥム単結晶 / シリコン単結晶 / トモグラフィー Less
  • Research Projects

    (4 results)
  • Co-Researchers

    (8 People)
  •  Characterization of and detection of defects in semiconductor crystals by infrared light scattering tomography

    • Principal Investigator
      OGAWA Tomoya
    • Project Period (FY)
      1992 – 1994
    • Research Category
      Grant-in-Aid for General Scientific Research (A)
    • Research Field
      Applied materials
    • Research Institution
      Department of Physics, Gakushuin University
  •  A new fringe method for characterization of ROUGHNESS of inner layrs in semiconductor crystals and dielectric thin layrs

    • Principal Investigator
      OGAWA Tomoya
    • Project Period (FY)
      1992 – 1994
    • Research Category
      Grant-in-Aid for Developmental Scientific Research (B)
    • Research Field
      Applied materials
    • Research Institution
      Department of Physics, Gakushuin University
  •  Characterization of Epitaxial Layers and Ion-Implanted Surfaces on Semiconductor Wafers by Scattering of Light and Optical Surface Waves

    • Principal Investigator
      OGAWA Tomoya
    • Project Period (FY)
      1988 – 1989
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      Applied materials
    • Research Institution
      Department of Physics, Gakushuin University
  •  Design and Prototype Construction of Infrared Resonance Scattering Tomography

    • Principal Investigator
      OGAWA Tomoya
    • Project Period (FY)
      1986 – 1988
    • Research Category
      Grant-in-Aid for Developmental Scientific Research
    • Research Field
      Applied materials
    • Research Institution
      Department of Physics, Gakushuin University
  • 1.  OGAWA Tomoya (50080437)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 0 results
  • 2.  MA Minya (60255263)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 3.  OYAMA Yasunao (20265573)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 4.  NARAOKA Kiyoiki
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 5.  NANGO Nobuhito
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 6.  KOJIMA Takahiro (50070272)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 7.  KAWAI Yoriyoshi (30158860)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 8.  大塚 謙一 (30101588)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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