Miyamoto Yasuyuki 宮本恭幸

… Alternative Names

MIYAMOTO Yasuyuki 宮本恭幸

宮本泰幸ミヤモトヤスユキ

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Researcher Number	40209953
Other IDs	https://orcid.org/0000-0002-2676-7264
External Links
Affiliation (Current)	2025: 東京科学大学, 工学院, 教授
Affiliation (based on the past Project Information) *help	2016 – 2024: 東京工業大学, 工学院, 教授 2013 – 2015: 東京工業大学, 理工学研究科, 教授 2013: 東京工業大学, 大学院理工学研究科, 教授 2012: 東京工業大学, 理工学研究科, 准教授 2007 – 2011: Tokyo Institute of Technology, 大学院・理工学研究科, 准教授 … More 2007: 東京工業大学, 大学院・理工学研究科, 教授 2006: Tokyo Institute of Technology, Department of Physical Electronics, Assoc.Prof., 大学院理工学研究科, 助教授 2000 – 2005: Graduate School of Science and Engineering, TOKYO INSTITUTE OF TECHNOLOGY Associate Professor, 大学院・理工学研究科, 助教授 1992 – 1999: 東京工業大学, 工学部, 助教授 1988 – 1991: Tokyo Institute of Technology, 工学部, 助手 Less
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / 電子デバイス・機器工学 / 表面界面物性 / Medium-sized Section 21:Electrical and electronic engineering and related fields / Basic Section 21060:Electron device and electronic equipment-related / Science and Engineering / Applied materials science/Crystal engineering Except Principal Investigator Electronic materials/Electric materials / 電子機器工学 / 電子材料工学 … More / Electron device/Electronic equipment / Engineering / Science and Engineering / Medium-sized Section 21:Electrical and electronic engineering and related fields / Microdevices/Nanodevices / 電子デバイス・機器工学 Less
Keywords	Principal Investigator InP / ヘテロ接合バイポーラトランジスタ / GaInAs / 電子ビーム露光 / ヘテロ構造 / 電子線リソグラフィー / InP HBT / Attractive Potential / 化合物半導体 / トンネルFET … More / InGaAs / ホットエレクトロントランジスタ / 選択成長 / ラテラルヘテロ接合バイポーラトランジスタ / 横方向結晶成長 / トンネルFE / 横方向成長 / バイポーラトランジスタ / ナノシート / 低消費電力 / ラテラルHBT / 2次元材料 / 低消費電力デバイス / 遷移金属ダイカルコゲナイド / HfS2 / 原子層物質 / 超低消費電力デバイス / ファンデルワールス(vdW)ヘテロ接合 / 二硫化ハフニウム / トンネルトランジスタ / Kirk effect / Collector transit time / Narrow emitter / Collector capacitance / Ballistic electron / Electron beam lithography / Heterojunction bipolar transistor / カーク効果 / コレクタ走行時間 / 極小エミッタ / コレクタ容量 / バリステック電子走行 / ヘテロ接合バイポーラトランジ / Metalorganic Vapor Phase Epitaxy / Electron Beam Lithography / Two-dimensional Electron Gas / Hot Electron Transistors / Heterojunction Bipolar Transistors / Nano metal electrodes / フリーステンディングワイヤ / 移動度 / フリースタンディングワイヤ / 有機金属気相成長法 / 引力ポテンシャル / 2次元電子ガス / ナノ金属細線 / Formation of Mesa Sidewall / Suppression of Undercut Etching / Electron Beam Exposure / Miniaturization of Emitter / Heterojunction Bipolar Transistor / GalnAs / メサ側面形成 / アンダーカットエッチング抑制 / エミッタ微細化 / Double Barrier Resonant Emitter / OMVPE Embedding Tungsten / Lateral Coherence / Coherent Emitter / Biprism / Electron Wave / Tungsten Wire / GaAs MOVPE / タングステン抵抗評価 / タングステンの抵抗評価 / ラテラル成長 / タングステンRIE / InP MOVPE / タングステン細線埋込 / 絶縁体-半導体界面 / 格子緩和成長 / 分子線エピタキシー / InGaAs MIS構造 / タイプIIヘテロ構造 / 化合物半導体MOSFET / スタガード型ヘテロ構造 / ヘテロ接合 / 絶縁ゲート / ヘテロランチャー / 縦型電子デバイス / モンテカルロシミュレーション / バリスティック電子 / III-V MOS / 電子ランチャー / ホットエレクトロン / 微細コンタクト穴開け / アンダーカット / 化学エッチング / InP系HBT / コレクタアップ構造 / 外部ベース層下エッチング / 弗化カルシウム / 電子波 / ホットエレクトロン観測 / 電子ビーム露光法 / 金属絶縁体ヘテロ構造 / 多層レジスト構造 / 電子線露光 / GaInP / 微細電極 / 電子の波動性 / 平面型冷陰極 … More Except Principal Investigator GaInAs / ホットエレクトロン / InP / OMVPE / 共鳴トンネルダイオード / Electron Wave / ホットエレクトロンエミッタ / 電子波回折 / 電子波 / 有機金属気相成長法 / 電子の波動性 / SAM / AlAs / Double Barrier Resonant Emitter / Attractive Potential / OMVPE Embedding Tungsten / Lateral Coherence / Coherent Emitter / Biprism / Tungsten Wire / 引力ポテンシャル / コヒーレントエミッタ / hot electron / STM / バリスティック伝導 / Epitaxial Growth / Hot electron / OMVPE埋め込み成長 / 電子波回析 / 極微細構造 / テラヘルツ波 / 極性制御 / CMOS / GaN / 窒化アルミニウム / ワイドギャップ半導体 / 極性反転 / 2次元正孔ガス / 2次元電子ガス / 窒化ガリウム / テラヘルツ/赤外材料 / 電子・電気材料 / 電子デバイス・機器 / マイクロナノデバイス / 半導体超微細化 / テラヘルツ／赤外材料 / 周波数可変発振素子 / 室温テラヘルツ光源 / テラヘルツ光デバイス / テラヘルツ電子デバイス / テラヘルツ分光分析 / テラヘルツレーダー / テラヘルツイメージング / テラヘルツ無線通信 / 周波数可変テラヘルツ光源 / テラヘルツ発振 / 半導体ナノデバイス / OMVPE Embedding / Quantum Wire Laser / Dry Etching / Electron Wave Reflection / Wet Chemical Etching / Electron Beam Exposure / Organometallic Vapor Phase Epitaxy / Ultrafine Structure / ウェットケミカルエッチング / 電子ビーム露光法 / 有機金属気相成長 / 電子波長 / 量子サイズ / 量子細線レ-ザ / ドライエッチング / 電子波反射 / 化学エッチング / 電子ビ-ム露光法 / Low-damage dry etching / Quantum box / Quantum wire / Ultra-high-speed optical device / Multidimensional quantum-well laser / 屈折率反射型光スイッチ / 多次元量子井戸構造 / 低損傷ドライエッチング / 交差型光スイッチ / 量子箱 / 量子細線 / CaInAs / 超高速光デバイス / 多次元量子井戸レ-ザ / Superlattice / Electron Beam Lithography / Metalorganic Vapor Phase Epitaxy / Ballistic Transport / Hot Electron / Ultrafast Transistor / 高速デバイス / 電子波多重反射 / ホットエクレトロン / 超格子 / 電子ビームリソグラフィ / 超高速トランジスタ / FDTD method for quantum mechanics / Fourier Transformation by electron wave / quantum effect device / reciprocity principle / BEEM / electron diffraction / scanning probe / 半導体 / バリシティック電子輸送 / 位相シフタ / 波面 / 量子相反性 / 弾道電子放出顕微鏡 / 電子波フーリエ変換デバイス / 相反原理 / 量子FDTD法 / 電子波フーリエ交換デバイス / 量子効果デバイス / 相反性 / 弾道電子放出顕微鏡(BEEM) / 走査プローブ / shadow mask / scanning probe microscopy / molecular nano-device / conductance switching / negative difference conductance / monolayer / self-assembled monolayer / FET / トンネル電流 / 変位電流 / 電界効果トランジスタ / シャドウマスク / 走査型プローブ / 分子ナノデバイス / コンダクタンススイッチング / 負性微分コンダクタンス / 単分子膜 / 自己組織化 / コヒーレンス性 / 微細タングステン細線 / 量子干渉デバイス / 電子波バイプリズム / GaAs MOVPE / タングステンパック / 埋め込みタングステン細線 / free-standing wire / タングステンスパッタ / 埋め込み金属ホットエレクトロントランジスタ / 固体バイプリズム / タングステン細線埋込 / Energy Relaxation Characteristics / Ballistic Electron Transport / GaInAs Heterostructure / Hot Electron Emitter / Spatial Distribution of Tunnel Transmission / Noise Characteristics of Tunneling Current / Scanning Hot Electron Microscope / Hot Electron Detection / エネルギ緩和特性 / バリスティック電子輸送 / GaInAsヘテロ構造 / トンネル透過率空間分布 / トンネル電流ノイズ特性 / 走査ホットエレクトロン顕微鏡 / ホットエレクトロン検出 / ステンシルリフトオフ法 / 電子波干渉 / 埋め込み金属細線 / メタルステンシル法 / 量子ビーム伝搬法 / 引力ポテンシャル場 / ダブルバリア共鳴電子エミッタ / OMVPEタングステン埋込 / 横コヒーレンス / バイプリズム / タングステン細線 / low work function metal / noise reduction by phase sensitive detection / noise in tunnel current / hot electron emitter / 超高真空STM / 低仕事関数 / ノイズ除法 / 低仕事関数金属 / 位相同期検出 / STMにおけるノイズ電流 / Resonant tunneling diode / Electron wave grating / Electron beam mark detection / InP OMVPE / Quantum size structure / Electron wave diffraction / Electron coherence / 相関関数 / 電子波ファブリペロー共振器 / 位相コヒーレント伝導 / InPヘテロ構造 / OMVPE成長法 / InP有機金属気相成長法 / 電子波グレーティング / 電子ビームマーク検出 / InpOMVPE / 量子サイズ構造形成 / 電子波コヒーレンス / Hot Electron Transistor / Resonant Tunneling Transistor / Resonant Tunneling Diode / Insulator Fluoride / Metalic Silicide / Metal-Insulator Heterostructure / Ultra-High Speed Electron Devices / 電子波デバイス / 超高速三端子電子デバイス / イオンビ-ムエピタキシ- / Si基板上結晶成長 / コバルトシリサイド / 弗化カルシウム / 金属・絶縁体極薄膜ヘテロ構造 / 共鳴トンネルトランジスタ / ホットエレクトロントランジスタ / 弗化物絶縁体 / 金属シリサイド / エピタキシャル成長 / 金属・絶縁体ヘテロ接合 / 超高速電子デバイス / SCH structure / Single facet output / High efficiency / BIG structure / High power / DR laser / Distributed reflector laser / Dynamic single mode Laser / SCH構造 / 片端面光出力 / 高効率 / BIG構造 / 高出力 / DRレ-ザ / 分布反射型レ-ザ / 動的単一モ-ドレ-ザ / Organo-metallic vapor phase epitaxy / Buried growth / Electron beam lithography / Lateral superlattice / Electron wave phenomenon / OMVPE選択成長 / 横超格子 / 埋め込み成長 / 電子ビ-ム露光 / 横超格子構造 / 電子波現象 / 周波数変調 / 直接変調 / 室温テラヘルツ発振 / 集積スロットアンテナ / テラヘルツ発振デバイス / テラヘルツ波の変調 / 微細スロットアンテナ / 大容量無線通信 / テラヘルツデバイス / 電子デバイス・集積回路 / 光電融合 / テラヘルツ / トランジスタ / 半導体レーザ / グローバル配線 / インターコネクション Less

Creation of Lateral Heterojunction Bipolar Transistors by Selective Growth in SiO2 CavitiesPrincipal Investigator
- Principal Investigator
  
  宮本恭幸
- Project Period (FY)
  2024 – 2025
- Research Category
  
  Grant-in-Aid for Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Tokyo Institute of Technology
Development of GaN CMOS Monolithic Integrated Circuits Technology Using Crystal Hetero-Polarity Control
- Principal Investigator
  
  林侑介
- Project Period (FY)
  2022 – 2025
- Research Category
  
  Fund for the Promotion of Joint International Research (Fostering Joint International Research (B))
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Osaka University
Creation of compound semiconductor lateral heterojunctions and their application to electronic devicesPrincipal Investigator
- Principal Investigator
  
  Miyamoto Yasuyuki
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Tokyo Institute of Technology
Exploration of breakthrough in terahertz-device performance by understanding the radiation mechanism from view point of electron travelling and transition
- Principal Investigator
  
  Asada Masahiro
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Specially Promoted Research
- Review Section
  
  Science and Engineering
  Engineering
- Research Institution
  Tokyo Institute of Technology
HfS2を用いた原子層厚ヘテロ接合による超低消費電力デバイスPrincipal Investigator
- Principal Investigator
  
  宮本恭幸
- Project Period (FY)
  2016 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Tokyo Institute of Technology
Complementary vertical tunnel FET aiming for low voltage and high speed operation by heterostructure design and miniaturizationPrincipal Investigator
- Principal Investigator
  
  MIYAMOTO Yasuyuki
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology
Development of devices and systems toward realization of high-capacity wireless communications by terahertz waves
- Principal Investigator
  
  ASADA Masahiro
- Project Period (FY)
  2009 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology
InP-based membrane-type optical and electronic devices for broad band intra-chip/inter-chip interconnection in Si-LSI circuits
- Principal Investigator
  
  ARAI Shigehisa
- Project Period (FY)
  2007 – 2011
- Research Category
  
  Grant-in-Aid for Specially Promoted Research
- Review Section
  
  Science and Engineering
  Engineering
- Research Institution
  Tokyo Institute of Technology
Research on vertical InP-related hot electron transistors with insulated gatePrincipal Investigator
- Principal Investigator
  
  MIYAMOTO Yasuyuki
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology
Research for ultra-fast operation of InP HBT by ballistic transportation in collectorPrincipal Investigator
- Principal Investigator
  
  MIYAMOTO Yasuyuki
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology
Study of self assembled monolayer field effect transistors using the shadow mask evaporation technique
- Principal Investigator
  
  MAJIMA Yutaka
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Microdevices/Nanodevices
- Research Institution
  Tokyo Institute of Technology
Observation of Electron-Wave Diffraction with Scanning Probe based on Reciprocity Principle
- Principal Investigator
  
  FURUYA Kazuhito
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology
Ultrafine/High-speed electron devices based on buried nano-metal-wires in compound semiconductorsPrincipal Investigator
- Principal Investigator
  
  MIYAMOTO Yasuyuki
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Tokyo Institute of Technology
Study of Direct Observation of Electron Wave Phenomena in Solid State by Scanning Hot Electron Microscopy
- Principal Investigator
  
  FURUYA Kazuhito
- Project Period (FY)
  1999 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (A).
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOKYO INSTITUTE OF TECHNOLOGY
Improving Crystal Conditions of Compound Semiconductors Laterally Grown on Metal WirePrincipal Investigator
- Principal Investigator
  
  MIYAMOTO Yasuyuki
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Tokyo Institute of Technology
Ultra High-Speed Operation of Ultra-Fine GaInAs/InP HBT by Suppressing Recombination Current at Mesa SidewallPrincipal Investigator
- Principal Investigator
  
  MIYAMOTO Yasuyuki
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Tokyo Institute of Technology
Quantum Interference Devices Controlled by Metals Buried in Semiconductors
- Principal Investigator
  
  FURUYA Kazuhito
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  TOKYO INSTITUTE OF TECHNOLOGY
Electron Wave Interference in Semiconductor Biprism of Tungsten Wire for Lateral Coherence Estimation
- Principal Investigator
  
  FURUYA Kazuhito
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (A).
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  TOKYO INSTITUTE OF TECHNOLOGY
外部ベース層下エッチングを特徴とする超高速コレクタアップInP系HBTPrincipal Investigator
- Principal Investigator
  
  宮本泰幸
- Project Period (FY)
  1996
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  Tokyo Institute of Technology
New STM technique for observation of ballistic electrons in semiconductors
- Principal Investigator
  
  FURUYA Kazuhito
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology
真空電子波デバイスの為のエピタキシャル金属/絶縁体構造平面放出型冷陰極Principal Investigator
- Principal Investigator
  
  宮本恭幸
- Project Period (FY)
  1995
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  表面界面物性
- Research Institution
  Tokyo Institute of Technology
真空電子波デバイスのための基礎研究-平面型フィールドエミッタの試作と電子波干渉現象-Principal Investigator
- Principal Investigator
  
  宮本恭幸
- Project Period (FY)
  1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (C)
- Research Field
  
  表面界面物性
- Research Institution
  Tokyo Institute of Technology
Basic study of coherent hot electron generation and its application for ultrafast devices
- Principal Investigator
  
  FURUYA Kazuhito
- Project Period (FY)
  1993 – 1994
- Research Category
  
  Grant-in-Aid for General Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Tokyo Institute of Technology
Fundamental Study of Ultra-High Speed Electron Devices with Metal-Insulator Single-Crystalline Ultra-Thin Layrs
- Principal Investigator
  
  ASADA Masahiro
- Project Period (FY)
  1991 – 1993
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子機器工学
- Research Institution
  Tokyo Institute of Technology
Basic Study of Ultra-High Speed Electron wave Device Using Hot-Electron Transport in Lateral Superlattice
- Principal Investigator
  
  FURUYA Kazuhito
- Project Period (FY)
  1989 – 1990
- Research Category
  
  Grant-in-Aid for General Scientific Research (A)
- Research Field
  
  電子材料工学
- Research Institution
  Tokyo Institute of Technology
Research of a High-power New Type Distributed-reflector (DR) Laser
- Principal Investigator
  
  ARAI Shigehisa
- Project Period (FY)
  1989 – 1990
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research (B).
- Research Field
  
  電子機器工学
- Research Institution
  Tokyo Institute of Technology
Research of Ultra-High-Speed Optical Devices Using Multi Dimensional Quantum-Well Structure
- Principal Investigator
  
  ASADA Masahiro, 末松安晴
- Project Period (FY)
  1988 – 1990
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research (B).
- Research Field
  
  電子材料工学
- Research Institution
  Tokyo Institute of Technology
Study on Fabrication Technology of GaInAs/InP Device with Ultrafine Structure
- Principal Investigator
  
  FURUYA Kazuhito
- Project Period (FY)
  1988 – 1989
- Research Category
  
  Grant-in-Aid for Developmental Scientific Research
- Research Field
  
  電子機器工学
- Research Institution
  Tokyo Institute of Technology
Basic Research of GaInAs Ultrafast Transistor Using Diffraction of Ballistic Electron
- Principal Investigator
  
  FURUYA Kazuhito
- Project Period (FY)
  1987 – 1988
- Research Category
  
  Grant-in-Aid for General Scientific Research (B)
- Research Field
  
  電子機器工学
- Research Institution
  Tokyo Institute of Technology

[Book] グリーンナノテクノロジー, 編集(ナノテクノロジーネットワーク編集委員会委員)2011
- Author(s)
  宮本恭幸
- Total Pages
  217
- Publisher
  日刊工業新聞社
- Data Source
  KAKENHI-PROJECT-21226010
[Book] 電子デバイス2009
- Author(s)
  宮本恭幸
- Total Pages
  153
- Publisher
  培風館
- Data Source
  KAKENHI-PROJECT-19206038
[Journal Article] Calculation of GaInSb PNP lateral HBT for complementary bipolar logic technology2024
- Author(s)
  Miyamoto Yasuyuki、Honjyo Makoto、Fukuda Koichi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 63 Issue: 3 Pages: 03SP63-03SP63
- DOI
  10.35848/1347-4065/ad2919
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H01384
[Journal Article] GaAsSb/InGaAs tunnel FETs using thick SiO2 mask for regrowth2024
- Author(s)
 Fan Jiawei、Xu Ruifeng、Arai Masakazu、Miyamoto Yasuyuki
- Journal Title
 
 Japanese Journal of Applied Physics
 
 Volume: 63 Issue: 3 Pages: 03SP75-03SP75
- DOI
 10.35848/1347-4065/ad27be
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-21H01384
[Journal Article] Wet etching for isolation of N-polar GaN HEMT structure by electrodeless photo-assisted electrochemical reaction2021
- Author(s)
  Aota T.、Hayasaka A.、Makabe I.、Yoshida S.、Gotow T.、Miyamoto Y.
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: SC Pages: SCCF06-SCCF06
- DOI
  10.35848/1347-4065/abe7c0
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H06292
[Journal Article] Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer2020
- Author(s)
  MIYAMOTO Yasuyuki、GOTOW Takahiro
- Journal Title
  
  IEICE Trans. Electron.
  
  Volume: E103.C Issue: 6 Pages: 304-307
- DOI
  10.1587/transele.2019FUS0002
- NAID
  130007850075
- ISSN
  0916-8524, 1745-1353
- Year and Date
  2020-06-01
- Language
  English
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H06292
[Journal Article] Fabrication of Si photonic waveguides by electron beam lithography using improved proximity effect correction2020
- Author(s)
  Eissa Moataz、Mitarai Takuya、Amemiya Tomohiro、Miyamoto Yasuyuki、Nishiyama Nobuhiko
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: 12 Pages: 126502-126502
- DOI
  10.35848/1347-4065/abc78d
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H06292, KAKENHI-PROJECT-19H02193
[Journal Article] Annealing temperature dependence of alloy contact for N-polar GaN HEMT structure2019
- Author(s)
  Hotta Koushi、Tomizuka Yumiko、Itagaki Kosuke、Makabe Isao、Yoshida Shigeki、Miyamoto Yasuyuki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SC Pages: SCCD14-SCCD14
- DOI
  10.7567/1347-4065/ab1063
- NAID
  210000156132
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H06292
[Journal Article] Performance improvement of a p-MoS2/HfS2 van der Waals heterostructure tunneling FET by UV-O3 treatment2019
- Author(s)
  Zhang Wenlun、Kanazawa Toru、Miyamoto Yasuyuki
- Journal Title
  
  Applied Physics Express
  
  Volume: 12 Issue: 6 Pages: 065005-065005
- DOI
  10.7567/1882-0786/ab2199
- NAID
  210000156022
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H06292
[Journal Article] Circuit speed oriented device design scheme for GaAsSb / InGaAs double gate hetero-junction tunnel FETs2019
- Author(s)
  Fukuda Koichi、Nogami Naoya、Kunisada Shogo、Miyamoto Yasuyuki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: SG Pages: SGGA06-SGGA06
- DOI
  10.7567/1347-4065/ab6569
- NAID
  210000157896
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H06292
[Journal Article] Regrown source/drain in InGaAs multi-gate MOSFETs2019
- Author(s)
  Miyamoto Yasuyuki、Kanazawa Toru、Kise Nobukazu、Kinoshita Haruki、Ohsawa Kazuto
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 522 Pages: 11-15
- DOI
  10.1016/j.jcrysgro.2019.06.014
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H06292
[Journal Article] GaAsSb/InGaAs double-gate vertical tunnel FET with a subthreshold slope of 56 mV dec?1 at room temperature2019
- Author(s)
  Aonuma Ryosuke、Kise Nobukazu、Miyamoto Yasuyuki
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SB Pages: SBBA08-SBBA08
- DOI
  10.7567/1347-4065/ab027a
- NAID
  210000135458
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H06292
[Journal Article] Effect of increasing gate capacitance on the performance of a p-MoS2/HfS2 van der Waals heterostructure tunneling field-effect transistor2019
- Author(s)
  W. Zhang, S. Netsu, T. Kanazawa, T. Amemiya, Y. Miyamoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SB Pages: SBBH02-SBBH02
- DOI
  10.7567/1347-4065/aaf699
- NAID
  210000135286
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H06082, KAKENHI-PROJECT-16H06292
[Journal Article] Type-II HfS2/MoS2 Heterojunction Transistors2018
- Author(s)
 Netsu Seiko、Kanazawa Toru、Uwanno Teerayut、Amemiya Tomohiro、Nagashio Kosuke、Miyamoto Yasuyuki
- Journal Title
 
 IEICE Trans. Electron.
 
 Volume: E101.C Issue: 5 Pages: 338-342
- DOI
 10.1587/transele.E101.C.338
- NAID
 130006729710
- ISSN
 0916-8524, 1745-1353
- Year and Date
 2018-05-01
- Language
 English
- Peer Reviewed
- Data Source
 KAKENHI-PUBLICLY-16H00905, KAKENHI-PROJECT-16H04343, KAKENHI-PROJECT-16H06082
[Journal Article] A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs2018
- Author(s)
  Netsu Seiko、Hellenbrand Markus、Zota Cezar B.、Miyamoto Yasuyuki、Lind Erik
- Journal Title
  
  IEEE Journal of the Electron Devices Society
  
  Volume: 6 Pages: 408-412
- DOI
  10.1109/jeds.2018.2806487
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16H06292
[Journal Article] Dependence of electron mobility on gate voltage sweeping width and deposition temperature in MOSFETs with HfO2/Al2O3/InGaAs gate stacks2017
- Author(s)
  K. Ohsawa, S. Netsu, N. Kise, S. Noguchi, and Y. Miyamoto
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 56 Issue: 4S Pages: 04CG05-04CG05
- DOI
  10.7567/jjap.56.04cg05
- NAID
  210000147612
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26249046, KAKENHI-PROJECT-16H06292
[Journal Article] Performance Improvement of HfS2 Transistors by Atomic Layer Deposition of HfO22017
- Author(s)
  Kanazawa Toru、Amemiya Tomohiro、Upadhyaya Vikrant、Ishikawa Atsushi、Tsuruta Kenji、Tanaka Takuo、Miyamoto Yasuyuki
- Journal Title
  
  IEEE Transactions on Nanotechnology
  
  Volume: 16 Issue: 4 Pages: 582-587
- DOI
  10.1109/tnano.2017.2661403
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H06292, KAKENHI-PUBLICLY-16H00905
[Journal Article] Vacuum Annealing and Passivation of HfS2 FET for Mitigation of Atmospheric Degradation2017
- Author(s)
 UPADHYAYA Vikrant、KANAZAWA Toru、MIYAMOTO Yasuyuki
- Journal Title
 
 IEICE Trans. Electron.
 
 Volume: E100.C Issue: 5 Pages: 453-457
- DOI
 10.1587/transele.E100.C.453
- NAID
 130005631606
- ISSN
 0916-8524, 1745-1353
- Language
 English
- Peer Reviewed
- Data Source
 KAKENHI-PROJECT-16H06292, KAKENHI-PUBLICLY-16H00905
[Journal Article] 二次元材料HfS2を用いたMOSトランジスタ2016
- Author(s)
  金澤徹, 雨宮智宏, 宮本恭幸
- Journal Title
  
  月刊機能材料
  
  Volume: 36 Pages: 46-52
- Acknowledgement Compliant
- Data Source
  KAKENHI-PUBLICLY-16H00905
[Journal Article] InGaAs/AlAs triple-barrier p-i-n junction diode for realizing superlattice-based FET for steep slope2016
- Author(s)
  A. Yukimachi and Y. Miyamoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: vol.55 Issue: 11 Pages: 118004-118004
- DOI
  10.7567/jjap.55.118004
- NAID
  210000147254
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-16H06292, KAKENHI-PROJECT-26249046
[Journal Article] Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain2016
- Author(s)
  N. Kise,H. Kinoshita, A. Yukimachi, T. Kanazawa and Y. Miyamoto
- Journal Title
  
  Solid-State Electronics
  
  Volume: vol.126 Pages: 92-95
- DOI
  10.1016/j.sse.2016.09.009
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-16H06292, KAKENHI-PROJECT-26249046, KAKENHI-PROJECT-16K18087
[Journal Article] Few Layer HfS2 Transistor2016
- Author(s)
  Toru Kanazawa, Tomohiro Amemiya, Atsushi Ishikawa, Vikrant Upadhyaya, Kenji Tsuruta, Takuo Tanaka, Yasuyuki Miyamoto
- Journal Title
  
  Scientific Reports
  
  Volume: 6 Issue: 1 Pages: 22277-22277
- DOI
  10.1038/srep22277
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-15H05763, KAKENHI-PUBLICLY-16H00905
[Journal Article] Recent progress in compound semiconductor electron devices2016
- Author(s)
  Y. Miyamoto
- Journal Title
  
  IEICE Electron. Express
  
  Volume: 13 Issue: 18 Pages: 20162002-20162002
- DOI
  10.1587/elex.13.20162002
- NAID
  130005266591
- ISSN
  1349-2543
- Language
  English
- Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-16H06292, KAKENHI-PROJECT-26249046
[Journal Article] Source and Drain Concentration Dependence on Double Gate GaAsSb/InGaAs Tunnel FET2016
- Author(s)
  岩田真次郎,大橋一水, 林文博, 福田浩一, 宮本恭幸
- Journal Title
  
  IEEJ Transactions on Electronics, Information and Systems
  
  Volume: 136 Issue: 4 Pages: 467-473
- DOI
  10.1541/ieejeiss.136.467
- NAID
  130005141655
- ISSN
  0385-4221, 1348-8155
- Language
  Japanese
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26249046, KAKENHI-PROJECT-16H06292
[Journal Article] MOSFET with III-V Channel2016
- Author(s)
  宮本恭幸
- Journal Title
  
  IEEJ Transactions on Electronics, Information and Systems
  
  Volume: 136 Issue: 4 Pages: 437-443
- DOI
  10.1541/ieejeiss.136.437
- NAID
  130005141657
- ISSN
  0385-4221, 1348-8155
- Language
  Japanese
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26249046, KAKENHI-PROJECT-16H06292
[Journal Article] Scaling limit for InGaAs/GaAsSb heterojunction double-gate tunnel FETs from the viewpoint of direct band-to-band tunneling from source to drain induced off-characteristics deterioration2016
- Author(s)
  W. Lin, S.Iwata, K. Fukuda and Y. Miyamoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: vol.55 Issue: 7 Pages: 070303-070303
- DOI
  10.7567/jjap.55.070303
- NAID
  210000146742
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-16H06292, KAKENHI-PROJECT-26249046
[Journal Article] Body width dependence of subthreshold slope and on-current in GaAsSb/InGaAs double-gate vertical tunnel FETs2015
- Author(s)
  K. Ohashi, M. Fujimatsu, S. Iwata and Y. Miyamoto
- Journal Title
  
  Jpn. J. Appl.Phys
  
  Volume: 54 Issue: 4S Pages: 04DF10-04DF10
- DOI
  10.7567/jjap.54.04df10
- NAID
  210000145011
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26249046
[Journal Article] Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density2014
- Author(s)
  K. Ohsawa, A. Kato, T. Kanazawa, E. Uehara and Y. Miyamoto
- Journal Title
  
  IEICE Electron. Express
  
  Volume: 11 Issue: 14 Pages: 20140567-20140567
- DOI
  10.1587/elex.11.20140567
- NAID
  130004725760
- ISSN
  1349-2543
- Language
  English
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26249046
[Journal Article] High open-circuit voltage gain in vertical InGaAs channel metal-insulator semiconductor field effect transistor using heavily doped drain region and narrow channel mesa2013
- Author(s)
  M. Kashiwano, J. Hirai, S. Ikeda, M. Fujimatsu, and Y. Miyamoto
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: vol.52 Issue: 4S Pages: 04CF05-04CF05
- DOI
  10.7567/jjap.52.04cf05
- NAID
  110009569440
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226010
[Journal Article] Reduction of Output Conductance in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor Using Heavily Doped Drain Region2012
- Author(s)
  H.Saito, Y.Miyamoto
- Journal Title
  
  Appl.Phys.Express
  
  Volume: vol.5 Issue: 2 Pages: 024101-024101
- DOI
  10.1143/apex.5.024101
- NAID
  10030155693
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19002009, KAKENHI-PROJECT-21226010
[Journal Article] Deviation From Proportional Relationship Between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operating at High Current Density2011
- Author(s)
  M.Yamada, T.Uesawa, Y.Miyamoto, K.Furuya
- Journal Title
  
  IEEE Electron Device Lett.
  
  Volume: vol.32 Pages: 491-493
- NAID
  110007999989
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226010
[Journal Article] Fabrication of InP/InGaAs DHBTs with Buried SiO2 Wires2011
- Author(s)
  N.Takebe, T.Kobayashi, H.Suzuki, Y.Miyamoto, K.Furuya
- Journal Title
  
  IEICE Trans. Electron.
  
  Volume: E94-C Issue: 5 Pages: 830-834
- DOI
  10.1587/transele.E94.C.830
- NAID
  10029506179
- ISSN
  0916-8524, 1745-1353
- Language
  English
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19002009, KAKENHI-PROJECT-21226010
[Journal Article] Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with High Current Density2011
- Author(s)
  H.Saito, Y.Matsumoto, Y.Miyamoto, K.Furuya
- Journal Title
  
  Jpn.J.Appl.Phys.
  
  Volume: vol.50
- NAID
  40017446831
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226010
[Journal Article] InP/InGaAs Composite MOSFETs with Regrown Source andAl_2O_3gate dielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm2011
- Author(s)
  R.Terao, T.Kanazawa, S.Ikeda, Y.Yonai, A.Kato, Y.Miyamoto
- Journal Title
  
  Appl.Phys.Express
  
  Volume: vol.4 Issue: 5 Pages: 054201-054201
- DOI
  10.1143/apex.4.054201
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19002009, KAKENHI-PROJECT-21226010
[Journal Article] Deviation from Proportional Relationship between Emitter Charging Time and Inverse Current of Heterojunction Bipolar Transistors Operationg at High Current Dentity2011
- Author(s)
  M.Yamada, T.Uesawa, Y.Miyamoto, K. Furuya
- Journal Title
  
  IEEE Electron Device Lett
  
  Volume: vol.32 Issue: 4 Pages: 491-493
- DOI
  10.1109/led.2011.2107497
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19002009, KAKENHI-PROJECT-21226010
[Journal Article] Monte Carlo Analysis of Base Transi Times of InP/GaInAs Heterojunction Bipolar Transistors with Ultrathin Graded Bases2010
- Author(s)
  T.Uesawa, M.Yamada, Y.Miyamoto, K.Furuya
- Journal Title
  
  Jpn.J.Appl.Phys. vol.49
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206038
[Journal Article] Submicron InP/InGaAs Composite-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Selectively Regrown n^+-Source2010
- Author(s)
  T.Kanazawa, K.Wakabayashi, H.Saito, R.Terao, S.Ikeda, Y.Miyamoto, K.Furuya
- Journal Title
  
  Appl.Phys.Express
  
  Volume: vol.3
- NAID
  10026690574
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226010
[Journal Article] Fabrication of Vertical InGaAs Channel Metal-Insulator-Semiconductor Field Effect Transistor with a 15-nm-wide Mesa Structure and a Drain Current Density of 7 MA/cm^22010
- Author(s)
  H.Saito, Y.Miyamoto, K.Furuya
- Journal Title
  
  Appl.Phys.Express
  
  Volume: vol.3
- NAID
  10026586520
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226010
[Journal Article] 極微細ヘテロ接合トランジスタ2010
- Author(s)
  宮本恭幸
- Journal Title
  
  応用物理
  
  Volume: 第79巻 Pages: 1010-1013
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19002009
[Journal Article] Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector2010
- Author(s)
  Y.Miyamoto, S.Takahashi, T.Kobayashi, H.Suzuzki, K.Furuya
- Journal Title
  
  IEICE TRANSACTIONS on Electronics vol.E-93C(5月掲載決定)
- NAID
  10026825631
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206038
[Journal Article] Monte Carlo Analysis of Base Transit Times of InP/GaInAs Heterojunction Bipolar Transistors with Ultrathin Graded Bases2010
- Author(s)
  T.Uesawa, M.Yamada, Y.Miyamoto, K.Furuya
- Journal Title
  
  Jpn.J.Appl.Phys. vol.49
- NAID
  40016982521
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19002009
[Journal Article] Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector2010
- Author(s)
  Y. Miyamoto, S. Takahashi, T. Kobayashi, H. Suzuzki, K. Furuya
- Journal Title
  
  IEICE TRANSACTIONS on Electronics vol.E-93C
  
  Pages: 644-647
- NAID
  10026825631
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206038
[Journal Article] Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector2010
- Author(s)
  Y.Miyamoto, S.Takahashi, T.Kobayashi, H.Suzuzki, K.Furuya
- Journal Title
  
  IEICE Trans.Electron.
  
  Volume: vol.E93-C Pages: 644-647
- NAID
  10026825631
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226010
[Journal Article] Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector2010
- Author(s)
  Y.Miyamoto
- Journal Title
  
  IEICE Trans.Electron.
  
  Volume: vol.E93-C Pages: 644-647
- NAID
  10026825631
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19002009
[Journal Article] 極微細ヘテロ接合トランジスタ2010
- Author(s)
  宮本恭幸
- Journal Title
  
  応用物理
  
  Volume: 第79巻 Pages: 1010-1013
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21226010
[Journal Article] Monte Carlo Analysis of Base Transit Times of InP/GaInAs Heterojunction Bipolar Transistors with Ultra thin Graded Bases2010
- Author(s)
  T. Uesawa, M. Yamada, Y. Miyamoto, K. Furuya
- Journal Title
  
  Jpn. J. Appl. Phys vol.49
  
  Pages: 24302-24302
- NAID
  40016982521
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206038
[Journal Article] Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain2009
- Author(s)
  H. Saito, Y. Miyamoto, K. Furuya
- Journal Title
  
  Applied Physics Express vol.2,no.3
  
  Pages: 34501-34501
- NAID
  10025085180
- Data Source
  KAKENHI-PROJECT-19002009
[Journal Article] Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain2009
- Author(s)
  H. Saito, Y. Miyamoto, and K. Furuya
- Journal Title
  
  Appl. Phys. Express
  
  Volume: vol.2, no.3 Pages: 34501-34501
- NAID
  10025085180
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19002009
[Journal Article] Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance and High Voltage Gain2009
- Author(s)
  H. Saito, Y. Miyamoto, K. Furuya
- Journal Title
  
  Applied Physics Express 2
  
  Pages: 34501-34501
- NAID
  10025085180
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206038
[Journal Article] Improvement in Gate Insulation in InP Hot Electron Transistors for High Transconductance, High Voltage Gain2009
- Author(s)
  H. Saito, Y. Miyamoto, K. Furuya
- Journal Title
  
  Applied Physics Express 巻2
  
  Pages: 3451-3451
- NAID
  10025085180
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206038
[Journal Article] Cutoff Frequency Characteristics of Gate-Control Hot Electron Transistors by Monte Carlo Simulation2008
- Author(s)
  M. Igarashi, K. Furuya, Y. Miyamoto
- Journal Title
  
  Physica Statu s Solidi(C) 巻5
  
  Pages: 70-73
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206038
[Journal Article] Cutoff Frequency Characteristics of Gate-Control Hot Electron Transistors by Monte Carlo Simulation2008
- Author(s)
  M. Igarashi, K. Furuya, and Y. Miyamoto
- Journal Title
  
  Physicsa Status Solidi(C) 5
  
  Pages: 70-73
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206038
[Journal Article] Inp buried growth of SiO2 wires toward reduction of collector capacitance in HBT2007
- Author(s)
  Y.Miyamoto
- Journal Title
  
  J. Cryst. Growth 298
  
  Pages: 867-870
- Data Source
  KAKENHI-PROJECT-16360170
[Journal Article] InP buried growth of Si02 wires toward reduction of collector capacitance in HBT2007
- Author(s)
  Y.Miyamoto
- Journal Title
  
  J. Cryst, Growth 298
  
  Pages: 867-870
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360170
[Journal Article] InP buried growth of Si02 wires toward reduction of collector capacitance in HBT2007
- Author(s)
  Y.Miyamoto
- Journal Title
  
  J.Cryst, Growth 298
  
  Pages: 867-870
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360170
[Journal Article] InP/InGaAs hot electron transistors with insulated gate2007
- Author(s)
  A. Suwa, T. Hasegawa, T. Hino, H. Saito, M. Oono, Y. Miyamoto, and K. Furuya
- Journal Title
  
  Jpn. J. Appl Phys., 46
- NAID
  210000064020
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206038
[Journal Article] InP/InGaAs hot electron transistors with insulated gate2007
- Author(s)
  A. Suwa, T. Hasegawa, T. Hino, H. Sa ito, M. Oono, Y. Miyamoto, K. Furuya
- Journal Title
  
  Jpn. J. Appl. Phys 巻46
- NAID
  210000064020
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19206038
[Journal Article] Current Gain and Voltage Gain in Hot Electron Transistor without Base Layer2006
- Author(s)
  Yasuyuki MIYAMOTO
- Journal Title
  
  Trans. IECE of Japan E89-C, 7
  
  Pages: 972-978
- NAID
  110007538774
- Data Source
  KAKENHI-PROJECT-16360170
[Journal Article] Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer2006
- Author(s)
  Yasuyuki MIYAMOTO
- Journal Title
  
  Trans.IECE of Japan E89-C, 7
  
  Pages: 972-978
- NAID
  110007538774
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16360170
[Journal Article] Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer2006
- Author(s)
  Yasuyuki MIYAMOTO
- Journal Title
  
  Trans. IECE of Japan E89-C, 7
  
  Pages: 972-978
- NAID
  110007538774
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360170
[Journal Article] InP Buried growth of SiO2 wires toward reduction of collector capacitance in HBT2006
- Author(s)
  Yasuyuki Miyamoto
- Journal Title
  
  Thirteenth International Conference on Metal Organic Vapor Phase Epitaxy(ICMOVPE-XIII) (発表予定)
- Data Source
  KAKENHI-PROJECT-16360170
[Journal Article] Current gain and voltage gain in hot electron transistors without base layer2006
- Author(s)
  Yasuyuki Miyamoto
- Journal Title
  
  Trans IEICE E89-C(発表予定)
- NAID
  110007538774
- Data Source
  KAKENHI-PROJECT-16360170
[Journal Article] Analysis of lateral current spreading in collector of submicron HBT2005
- Author(s)
  Yasuyuki Miyamoto
- Journal Title
  
  International Conference on Indium Phoshide and Related WP-15
- Data Source
  KAKENHI-PROJECT-16360170
[Journal Article] Tungsten buried growth by using thin flow-liner for small collector capacitance in InP HBT2005
- Author(s)
  Y.Miyamoto
- Journal Title
  
  International Conference on Indium Phosphide and Related Materials (発表予定)
- Data Source
  KAKENHI-PROJECT-16360170
[Journal Article] Tungsten Buried Growth by Using Thin Flow-Liner for Small Collector Capacitance in InP HBT2005
- Author(s)
  Yasuyuki Miyamoto
- Journal Title
  
  International Conference on Indium Phoshide and Related Tu-A-1-4
- Data Source
  KAKENHI-PROJECT-16360170
[Journal Article] ディープサブミクロンInP系HBT2005
- Author(s)
  宮本恭幸
- Journal Title
  
  電気学会電子デバイス研究会 EDD-05-39
  
  Pages: 13-13
- NAID
  10015554592
- Data Source
  KAKENHI-PROJECT-16360170
[Journal Article] 20 nm Periodical Pattern by Calixarene Resists : Comparison of CMC[4]AOMe with MC[6]AOAc2004
- Author(s)
  Y.Miyamoto et al.
- Journal Title
  
  International Microprocesses and Nanotechnology Conference 2004
  
  Pages: 196-197
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360184
[Journal Article] InP hot-electron transistors with emitter mesa fabricated between gate electrodes for reduction in emitter-gate gate-leakage current2004
- Author(s)
  K.Takeuchi, H.Maeda, R.Nakagawa, Y.Miyamoto, K.Furuya
- Journal Title
  
  Jpn.J.Appl.Phys. vol.43, no.2A
- NAID
  10012039015
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360184
[Journal Article] Observation of Current Modulation thorough Self-Assembled Monolayer Molecule in Transistor Structure2004
- Author(s)
  Kazuki Sasao, Yasuo Azuma, Naotaka Kaneda, Eiji Hase, Yasuyuki Miyamoto, Yutaka Majima
- Journal Title
  
  Jpn. J. Appl. Phys. 43
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15310103
[Journal Article] 20 nm Periodical Pattern by Calixarene Resists : Comparison of CMC[4] AOMe with MC[6]AOAc2004
- Author(s)
  Y.Miyamoto, Y.Shirai, M.Yoshizawa, K.Furuya
- Journal Title
  
  2004 International Microprocesses and Nanotechnology Conference 28P-6-51
  
  Pages: 196-197
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360184
[Journal Article] 20 nm Periodical Pattern by Calixarene Resists : Comparison of CMC[4]AOMe with MC[6]AOAc2004
- Author(s)
  Y.Miyamoto
- Journal Title
  
  Conference Prodeedings of 2004 International Microprocesses and Nanotechnology Conference 28P-6-54
  
  Pages: 196-196
- Data Source
  KAKENHI-PROJECT-16360170
[Journal Article] Observation of Current Modulation through Self-Assembled Monolayer Molecule in Transistor Structure2004
- Author(s)
  Kazuki Sasao, Yasuo Azuma, Naotaka Kaneda, Eiji Hase, Yasuyuki Miyamoto, Yutaka Majima
- Journal Title
  
  Japanese Journal of Applied Physics 43
- NAID
  10012704857
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15310103
[Journal Article] InP hot electron transistors with reduced emitter width for controllability of collector current by gate bias2004
- Author(s)
  R.Nakagawa, K.Takeuchi, Y.Yamada, Y.Miyamoto, K.Furuya
- Journal Title
  
  International Conference on Indium Phosphide and Related Material(IPRM2004)
  
  Pages: 179-182
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360184
[Journal Article] Young's double-slit interference experiment of hot electron in semi-conductors(invited talk)2003
- Author(s)
  K.Furuya, Y.Ninomiya, N.Machida, Y.Miyamoto
- Journal Title
  
  Japan-UK 10+10 Meeting
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360184
[Journal Article] InP Hot Electron Transistors with a Buried Metal Gate2003
- Author(s)
  Y.Miyamoto, R.Yamamoto, H.Maeda, K.Takeuchi, N.Mchida, L.Wernersson, K.Furuya
- Journal Title
  
  Jpn.J.Appl.Phys. vol.42, no.12
  
  Pages: 7221-7226
- NAID
  10011839800
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360184
[Journal Article] InP hot electron transistors using modulation of gate electrodes sandwiching emitter mesa2003
- Author(s)
  K.Takeuchi, H.Maeda, R.Nakagawa, Y.Miyamoto, K.Furuya
- Journal Title
  
  2003 International Conference on Solid State Devices and Materials E-7-3
  
  Pages: 834-835
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360184
[Journal Article] Young's Double-Slit Interference Experiment of Hot Electron in Semiconductors2003
- Author(s)
  K.Furuya, Y.Ninomiya, N.Machida, Y.Miyamoto
- Journal Title
  
  6th International Conference on New Phenomena in Mesoscopic Systems & Fourth International Conference on Surfaces and Interfaces of Mesoscopic Devices, 1.6, Hawaii
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360184
[Journal Article] Young's Double-Slit Interference Observation of Hot Electrons in semiconductors2003
- Author(s)
  K.Furuya, Y.Ninomiya, N.Mchida, Y.Miyamoto
- Journal Title
  
  Physical Review Letters vol.19, no.21
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360184
[Journal Article] Wet Etching for Self-Aligned 0.1-mm-wide Emitter in InP/InGaAs HBT2003
- Author(s)
  K.Takeuchi, H.Maeda, R.Nakagawa, Y.Miyamoto, K.Furuya
- Journal Title
  
  Topical Workshop on Heterostructure Microelectronics(TWHM'03) W-11
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360184
[Journal Article] InP Hot Electron Transistors with a Buried Metal Gate2003
- Author(s)
  Y.Miyamoto et al.
- Journal Title
  
  Japanese Journal of Applied Physics 42
  
  Pages: 7221-7226
- NAID
  10011839800
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15360184
[Journal Article] Fabrication of GaInAs/InP Heterojunction Bipolar Transistors with a Single Tungsten Wire as Collector Electrode2003
- Author(s)
  K.Yokoyama, K.Matsuda, T.Nonaka, K.Takeuchi, Y.Miyamoto, K.Furuya
- Journal Title
  
  Jpn.J.Appl.Phys. vol.42, no.12B
- NAID
  10011841445
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360184
[Journal Article] Young's Double-Slit Interference of Hot Electron in Semiconductors2003
- Author(s)
  K.Furuya, Y.Ninomiya, N.Machida, Y.Miyamoto
- Journal Title
  
  13th International Conference on Non-equilibrium Carrier Dynamics in Semiconductors (HCIS 13), Th11.17, Modena
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15360184
[Patent] ホットエレクトロントランジスタ、及びその製造方法2009
- Inventor(s)
  宮本恭幸、前田寛、竹内克彦
- Industrial Property Rights Holder
  東京工業大学
- Acquisition Date
  2009-08-08
- Data Source
  KAKENHI-PROJECT-19002009
[Patent] ホットエレクトロントランジスタ、及びその製造方法2009
- Inventor(s)
  宮本恭幸、前田寛、竹内克彦
- Industrial Property Rights Holder
  東京工業大学
- Filing Date
  2009-08-07
- Data Source
  KAKENHI-PROJECT-19002009
[Patent] バイポーラトランジスタの製造方法2009
- Inventor(s)
  山幡章司、栗島賢二、宮本恭幸、山下浩明
- Industrial Property Rights Holder
  NTT
- Industrial Property Number
  2009-017616
- Filing Date
  2009-01-29
- Data Source
  KAKENHI-PROJECT-19002009
[Patent] ホットエレクトロントランジスタ、及びその製造方法2009
- Inventor(s)
  宮本恭幸, 前田寛, 竹内克彦
- Filing Date
  2009-08-07
- Data Source
  KAKENHI-PROJECT-19002009
[Patent] ホットエレクトロントランジスタ2005
- Inventor(s)
  宮本, 古屋, 浅田, 町田
- Industrial Property Rights Holder
  東工大
- Industrial Property Number
  2005-334326
- Filing Date
  2005-11-18
- Data Source
  KAKENHI-PROJECT-16360170
[Patent] 光信号送信装置及び光信号伝送システム2005
- Inventor(s)
  宮本, 浅田
- Industrial Property Rights Holder
  JST
- Industrial Property Number
  2005-356694
- Filing Date
  2005-12-09
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360170
[Patent] バイポーラトランジスタ及びその製造方法2005
- Inventor(s)
  宮本, 山本, 石田
- Industrial Property Rights Holder
  JST
- Industrial Property Number
  2005-334991
- Filing Date
  2005-11-18
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360170
[Patent] ホットエレクトロントランジスタ2005
- Inventor(s)
  宮本, 古屋, 浅田, 町田
- Industrial Property Rights Holder
  東工大
- Industrial Property Number
  2005-334326
- Filing Date
  2005-11-18
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16360170
[Patent] 半導体装置の製造方法
- Inventor(s)
  井田実、山幡章司、齋藤尚史、宮本恭幸
- Industrial Property Rights Holder
  日本電信電話、東京工業大学
- Industrial Property Number
  2010-100797
- Data Source
  KAKENHI-PROJECT-19206038
[Patent] ホットエレクトロントランジスタ、及びその製造方法
- Inventor(s)
  宮本恭幸、前田寛、竹内克彦
- Industrial Property Rights Holder
  東京工業大学
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] GaAsSb/InGaAs tunnel FETs using thick SiO2 mask for regrowt2023
- Author(s)
  R. Xu, J. Fan, M. Arai, Y. Miyamoto
- Organizer
  2023 International Conference on Solid State Devices and Materials (SSDM 2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01384
[Presentation] "Calculation of pnp GaInSb pnp lateral HBT for Complementary Bipolar Logic Technology2023
- Author(s)
  Y. Miyamoto, M. Honjyo and K. Fukuda
- Organizer
  2023 International Conference on Solid State Devices and Materials (SSDM 2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H01384
[Presentation] Fabrication of Si Photonics Waveguides by Thick Resist-Mask Electron Beam Lithography Proximity Effect Correction2019
- Author(s)
  Moataz Eissa, Takuya Mitarai, Tomohiro Amemiya, Nobuhiko Nishiyama, Yasuyuki Miyamoto
- Organizer
  International Microprocesses and Nanotechnology Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] Evaluation of fabrication method of InGaAs nanosheet2019
- Author(s)
  M.Kitamura, T.Kanazawa, and Y.Miyamoto
- Organizer
  Topical Workshop on Heterostructure Microelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] Si-based Orbital Angular Momentum Mux/Demux Module2019
- Author(s)
  T. Amemiya, T. Yoshida, Y. Atsumi, N. Nishiyama, Y. Miyamoto, Y. Sakakibara, S. Arai
- Organizer
  IEEE International Nanoelectronics Conference (INEC 2019)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer2019
- Author(s)
  Y. Miyamoto
- Organizer
  Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] Orbital Angular Momentum Mux/Demux Module Using Vertically Curved Si Waveguides2019
- Author(s)
  T. Amemiya, T. Yoshida, Y. Atsumi, N. Nishiyama, Y. Miyamoto, Y. Sakakibara, S. Arai
- Organizer
  2019 Optical Fiber Communication Conference (OFC 2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] Siフォトニクスによる光渦MUX/DEMUXモジュール2019
- Author(s)
  雨宮智宏, 吉田知也, 渥美裕樹, 西山伸彦, 宮本恭幸, 榊原陽一, 荒井滋久
- Organizer
  電子情報通信学会 2019年総合大会
- Invited
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] N-polar GaN HEMT with Al2O3 gate insulator2019
- Author(s)
  A. Hayasaka, R. Aonuma, K. Hotta, I. Makabe, S. Yoshida, and Y. Miyamoto
- Organizer
  Compound Semiconductor Week
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] Fabrication of Si Photonics Waveguides by Thick Resist-Mask Electron Beam Lithography Proximity Effect Correction2019
- Author(s)
  Moataz Eissa, Takuya Mitarai, Tomohiro Amemiya, Nobuhiko Nishiyama, Yasuyuki Miyamoto
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] Circuit speed oriented device design scheme for double gate hetero tunnel FETs2019
- Author(s)
  K. Fukuda, N. Nogami, S. Kunisada and Y. Miyamoto
- Organizer
  International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] p-MoS2/HfS2 van der Waals Heterostructure Transistor Using Ni Backgate Buried in HfO2 Dielectric2018
- Author(s)
  W. Zhang, S. Netsu, Toru Kanazawa, T. Amemiya, Y. Miyamoto
- Organizer
  2018 International Conference on Solid State Devices and Materials (SSDM 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] Fabrication of InGaAs Nanosheet Transistors with Regrown Source2018
- Author(s)
  T. Kanazawa, K. Ohsawa, T. Amemiya, N. Kise, R. Aonuma, Y. Miyamoto
- Organizer
  Compound Semiconductor Week 2018: 30th International Conference on Indium Phosphide and Related Materials (IPRM 2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] Si湾曲カプラ用いた光渦MUX/DEMUXモジュール2018
- Author(s)
  雨宮智宏, 吉田知也, 渥美裕樹, 西山伸彦, 宮本恭幸, 榊原陽一, 荒井滋久
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] GaAsSb/InGaAs縦型ダブルゲートトンネルFETの低温測定による評価2018
- Author(s)
  木瀬信和, 青沼遼介, 宮本恭幸
- Organizer
  電気学会電子デバイス研究会
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] GaAsSb/InGaAsダブルゲートTunnel FETにおける量子効果の検討‐正孔バンドの取り扱い2018
- Author(s)
  國貞彰吾、福田浩一、宮本恭幸
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] Regrown Source / Drain in InGaAs Multi-Gate MOSFET2018
- Author(s)
  Y. Miyamoto, T. Kanazawa, N. Kise, H. Kinoshita, and K. Ohsawa
- Organizer
  Int. Conf. Metalorganic Vapor Phase Epitaxy
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] GaAsSb/InGaAs double gate tunnel FET operating below 60 mv/decade and temperature dependence of band-edge decay parameters2018
- Author(s)
  Y. Miyamoto, N. Kise and R. Aonuma
- Organizer
  Workshop on Innovative Nanoscale Devices and Systems
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] Improvement in GaAsSb/InGaAs double-gate tunnel FET using thermal evaporation for gate electrode and Al2O3/ZrO2 for gate insulator2018
- Author(s)
  R. Aonuma, N. Kise, and Y. Miyamoto
- Organizer
  Int. Conf. Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] ヘテロ接合をもちいたトンネルFET ‐化合物半導体と二次元系半導体でのアプローチ例2018
- Author(s)
  宮本恭幸，金澤徹
- Organizer
  電子情報通信学会システムナノ技術第三回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] 埋め込みNiバックゲートを用いたp-MoS2/HfS2トンネルFET2018
- Author(s)
  張文倫, 祢津誠晃, 金澤徹, 雨宮智宏, 宮本恭幸
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] Siフォトニクスによる光渦MUX/DEMUXモジュール2018
- Author(s)
  雨宮智宏, 吉田知也, 渥美裕樹, 西山伸彦, 宮本恭幸, 榊原陽一, 荒井滋久
- Organizer
  電子情報通信学会レーザ・量子エレクトロニクス研究会（LQE）
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] InGaAsナノシートトランジスタの作製2018
- Author(s)
  金澤徹、大澤一斗、雨宮智宏、木瀬信和、青沼遼介、宮本恭幸
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] GaAsSb/InGaAsダブルゲートトンネルFETにおけるゲート金属形成プロセスの影響2018
- Author(s)
  木瀬信和、青沼遼介、宮本恭幸
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] Type II HfS2/MoS2 heterojunction Tunnel FET2017
- Author(s)
  S. Netsu, T. Kanazawa,V. Upadhyaya,T.Uwanno,T. Amemiya, K. Nagashio,and Y. Miyamoto
- Organizer
  Topical Workshop on Heterostructure Microelectronics (TWHM 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] InGaAs/GaAsSbダブルゲートTunnel FETにおける量子効果の影響2017
- Author(s)
  國貞彰吾、福田浩一、宮本恭幸
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] GaAsSb/InGaAs Double-Gate Vertical Tunnel FET with a Subthreshold Swing of 68mV/dec at Room Temperature2017
- Author(s)
  N. Kise, S. Iwata, R. Aonuma, K. Ohsawa and Y. Miyamoto
- Organizer
  2017 Compound Semiconductor Week (CSW) [Includes 29th International Conference on Indium Phosphide & Related Materials (IPRM) & 44th International Symposium on Compound Semiconductors (ISCS)]
- Place of Presentation
  dbb forum, Germany
- Year and Date
  2017-05-18
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] InAlGaN/GaN-HEMT Device Technologies for High-Power-Density W-band Amplifiers2017
- Author(s)
  K. Makiyama, T. Ohki, S. Ozaki, Y. Niida, N. Okamoto, Y. Minoura, M. Sato, Y. Kamada, T. Ishiguro,K. Joshin, N. Nakamura,and Y. Miyamoto
- Organizer
  International Conference on Materials and Systems for Sustainability (ICMaSS2017 )
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] Development of Field-Effect Transistor Using 2D Layered Hafnium Disulfide2017
- Author(s)
  T. Kanazawa and Y. Miyamoto
- Organizer
  International Workshop on Physics of Semiconductor Devices (IWPSD 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] Advanced HEMTs and MMICs Technologies for Next Generation Millimeter-wave Amplifiers2017
- Author(s)
  K. Makiyama, S. Ozaki, Y. Niida, T. Ohki, N. Okamoto, Y. Minoura, M. Sato, Yoichi Kamada, K. Joshin, N. Nakamura, and Y. Miyamoto
- Organizer
  International Conference on Nitride Semiconductors (ICNS 12)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] GaAsSb/InGaAs Double-Gate Vertical Tunnel FET with a Subthreshold Swing of 68mV/dec at Room Temperature2017
- Author(s)
  N. Kise, S. Iwata, R. Aonuma, K. Ohsawa and Y. Miyamoto
- Organizer
  Compound Semiconductor Week (CSW2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] HfS2/MoS2 ヘテロジャンクションの温度依存電流特性2017
- Author(s)
  祢津誠晃、金澤徹、雨宮智宏、宮本恭幸
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] GaN HEMT Device Technology for W-band Power Amplifiers2017
- Author(s)
  K. Makiyama, Y. Niida, S. Ozaki, T. Ohki, N. Okamoto, Y. Minoura, M. Sato, Y. Kamada, K. Joshin, K. Watanabe, Y. Miyamoto
- Organizer
  Compound Semiconductor Week　（CSW2017）
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] InGaAsナノシートチャネルを持つマルチゲートMOSFETに向けた作製プロセス開発2017
- Author(s)
  大澤一斗、金澤徹、木瀬信和、雨宮智宏、宮本恭幸
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] 68mV/decのSSをもつGaAsSb/InGaAsダブルゲートトンネルFET2017
- Author(s)
  木瀬信和、岩田真次郎、青沼遼介、宮本恭幸
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] Type II型HfS2/MoS2ヘテロジャンクションを有するTFET2017
- Author(s)
  祢津誠晃, 金澤徹, ヴィクラントウパディヤヤ, ウワンノーティーラユット, 雨宮智宏, 長汐晃輔, 宮本恭幸
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜 (神奈川県横浜市)
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PUBLICLY-16H00905
[Presentation] HfS2系トンネルトランジスタのデバイスシミュレーション2017
- Author(s)
  金澤徹, 雨宮智宏, 祢津誠晃, Vikrant Upadhyaya, 福田浩一, 宮本恭幸
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜 (神奈川県横浜市)
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PUBLICLY-16H00905
[Presentation] Multi-level inverter by GaN HEMT on semi-insulating substrate2017
- Author(s)
  D. Nakajun, R. F. T. Fathulah, H. Fujita, E. Yagyu, and Y. Miyamoto
- Organizer
  Topical Workshop on Heterostructure Microelectronics (TWHM 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] HfS2/MoS2 ヘテロジャンクションの温度依存電流特性2017
- Author(s)
  祢津誠晃、金澤徹、雨宮智宏、宮本恭幸
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PUBLICLY-16H00905
[Presentation] ヘテロ構造電子デバイスとMOVPE/MBE2017
- Author(s)
  宮本恭幸
- Organizer
  日本結晶学会ナノ構造・エピタキシャル成長講演会
- Invited
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] Type II HfS2/MoS2 Heterojunction Tunnel FET2017
- Author(s)
  Netsu Seiko、Kanazawa Toru、Upadhyaya Vikrant、Uwanno Teerayut 、Amemiya Tomohiro、Nagashio Kosuke、Miyamoto Yasuyuki
- Organizer
  12th Topical Workshop on Heterostructure Microelectronics (TWHM2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-16H00905
[Presentation] High speed GaN HEMT for power electronics2017
- Author(s)
  Y. Miyamoto, D. Nakajun, R. F. T. Fathulah, H. Fujita, and E. Yagyu
- Organizer
  International Conference on Nitride Semiconductors (ICNS 12)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] Development of Field-Effect Transistor Using 2D Layered Hafnium Disulfide2017
- Author(s)
  Kanazawa Toru、Miyamoto Yasuyuki
- Organizer
  XIX International Workshop on The Physics of Semiconductor Devices (IWPSD 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-16H00905
[Presentation] 短チャネルTFETにおけるソース-ドレイン間直接トンネリングのオフ電流への寄与2016
- Author(s)
  林文博, 岩田真次郎, 福田浩一，宮本恭幸
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東工大
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] Steep slope devices with InGaAs channel for post Si CMOS application2016
- Author(s)
  Y. Miyamoto
- Organizer
  China Semiconductor Technology International Conference (CSTIC) 2016
- Place of Presentation
  SHICC Shanghai International Convention Center,China
- Year and Date
  2016-03-13
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] Evaluation of electrical properties of HfS2 thin flakes obtained by mechanical exfoliation2016
- Author(s)
  Vikrant Upadhyaya, Toru Kanazawa, Yasuyuki Miyamoto
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  静岡大学 (静岡県浜松市)
- Year and Date
  2016-05-19
- Data Source
  KAKENHI-PUBLICLY-16H00905
[Presentation] 再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作2016
- Author(s)
  木下治紀木瀬信和祢津誠晃金澤徹宮本恭幸
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東工大
- Year and Date
  2016-03-22
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] Deposition Temperature and Al2O3 Thickness Dependence on the Mobility of HfO2/Al2O3/InGaAs Gate Stacks2016
- Author(s)
  K. Ohsawa, N. Kise and Y. Miyamoto
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  つくば国際会議場（茨城県）
- Year and Date
  2016-09-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] Deposition Temperature and Al2O3 Thickness Dependence on the Mobility of HfO2/Al2O3/InGaAs Gate Stacks2016
- Author(s)
  K. Ohsawa, N. Kise and Y. Miyamoto
- Organizer
  48th Int. Conf. on Solid State Devices and Materials
- Place of Presentation
  つくば国際会議場
- Year and Date
  2016-09-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] Vacuum annealing and passivation of HfS2 FET for mitigation of atmospheric degradation2016
- Author(s)
  Vikrant Upadhyaya, Toru Kanazawa, Yasuyuki Miyamoto
- Organizer
  2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2016)
- Place of Presentation
  函館国際ホテル (北海道函館市)
- Year and Date
  2016-07-04
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-16H00905
[Presentation] Operation of 16-nm InGaAs channel multi-gate MOSFETs with regrown source/drain2016
- Author(s)
  H. Kinoshita, N. Kise, A. Yukimachi, T. Kanazawa, Y. Miyamoto
- Organizer
  2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]
- Place of Presentation
  富山国際会議場
- Year and Date
  2016-06-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] Steep sub-threshold slope in short-channel InGaAs TFET2016
- Author(s)
  Y. Miyamoto, W. Lin, S.Iwata, and K. Fukuda
- Organizer
  The 18th International Symposium on the Physics of Semiconductors and Applications (ISPSA-2016)
- Place of Presentation
  Ramada Plaza Jeju Hotel, Korea
- Year and Date
  2016-07-06
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] Effect of the HfO2 passivation on HfS2 Transistors2016
- Author(s)
  Toru Kanazawa, Tomohiro Amemiya, Vikrant Upadhyaya, Atsushi Ishikawa, Kenji Tsuruta, Takuo Tanaka, Yasuyuki Miyamoto
- Organizer
  16th International Conference on Nanotechnology (IEEE NANO 2016)
- Place of Presentation
  仙台国際センター (宮城県仙台市)
- Year and Date
  2016-08-22
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-16H00905
[Presentation] HfO2パッシベーションによるHfS2 FETの特性改善2016
- Author(s)
  金澤徹, Vikrant Upadhyaya, 雨宮智宏, 石川篤, 鶴田健二, 田中拓男, 宮本恭幸
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ (新潟県新潟市)
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PUBLICLY-16H00905
[Presentation] Operation of 16-nm InGaAs channel multi-gate MOSFETs with regrown source/drain2016
- Author(s)
  H. Kinoshita, N. Kise, A. Yukimachi, T. Kanazawa, Y. Miyamoto
- Organizer
  Compound Semiconductor Week (CSW2016)
- Place of Presentation
  富山国際会議場（富山県）
- Year and Date
  2016-06-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] Experimental approach for feasibility of superlattice FETs2016
- Author(s)
  M. Kashiwano, A. Yukimachi and Y. Miyamoto
- Organizer
  2016 Lester Eastman Conference (LEC)
- Place of Presentation
  Lehigh University, USA
- Year and Date
  2016-08-03
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] Steep sub-threshold slope in short-channel InGaAs TFET2016
- Author(s)
  Y. Miyamoto, W. Lin, S.Iwata, and K. Fukuda
- Organizer
  International Symposium on the Physics of Semiconductors and Applications (ISPSA-2016)
- Place of Presentation
  Ramada Plaza Jeju Hotel, Jeju (Korea)
- Year and Date
  2016-07-06
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] Experimental approach for feasibility of superlattice FETs2016
- Author(s)
  M. Kashiwano, A. Yukimachi and Y. Miyamoto
- Organizer
  Lester Eastman Conference
- Place of Presentation
  Lehigh University, Bethlehem (USA)
- Year and Date
  2016-08-03
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06292
[Presentation] H.Kinoshita,S.Netsu,Y.Mishima,T.Kanazawa and Y.Miyamoto Fabrication of InGaAs channel multi-gate MOSFETs with MOVPE regrown source/drain2015
- Author(s)
  H.Kinoshita,S.Netsu,Y.Mishima,T.Kanazawa and Y.Miyamoto
- Organizer
  11th Topical Workshop on Heterostructure Microelectronics
- Place of Presentation
  HIDA HOTEL PLAZA, Takayama, Gifu
- Year and Date
  2015-08-24
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] Operation of 13-nm channel length InGaAs-MOSFET with n-InP source2015
- Author(s)
  K. Ohsawa, Y. Mishima and Y. Miyamoto
- Organizer
  27th International Conference on Indium Phosphide and Related Materials
- Place of Presentation
  University of California Santa Barbara, CA USA
- Year and Date
  2015-07-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] InGaAs channel for low supply voltage2015
- Author(s)
  Y. Miyamoto,T. Kanazawa, Y. Yonai, K. Ohsawa, Y. Mishima, M. Fujimatsu, K. Ohashi, S. Nestu, and S. Iwata
- Organizer
  47th Int. Conf. on Solid State Devices and Materials
- Place of Presentation
  Sapporo Convention Center
- Year and Date
  2015-09-28
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] Design of drain for low off current in GaAsSb/InGaAs tunnel FETs2015
- Author(s)
  S. Iwata, W. Lin, K. Fukuda and Y. Miyamoto
- Organizer
  47th Int. Conf. on Solid State Devices and Materials
- Place of Presentation
  Sapporo Convention Center
- Year and Date
  2015-09-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] Improvement of Interface Property of HfO2/Al2O3/In0.53Ga0.47As Using Nitrogen Plasma Cleaning and Hydrogen Annealing2015
- Author(s)
  S. Netsu, T. Kanazawa, and Y. Miyamoto
- Organizer
  27th International Conference on Indium Phosphide and Related Materials
- Place of Presentation
  University of California Santa Barbara, CA USA
- Year and Date
  2015-07-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける界面準位の導入による性能の劣化2015
- Author(s)
  岩田真次郎, 大橋一水, 祢津　誠晃, 福田　浩一，宮本恭幸
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-16
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] Steep subthreshold slope in InGaAs MOSFET2015
- Author(s)
  Y. Miyamoto, M. Fujimatsu, K. Ohashi, A. Yukimachi and S. Iwata
- Organizer
  SemiconNano2015
- Place of Presentation
  Lakeshore Hotel, Hsinchu, Taiwan
- Year and Date
  2015-09-07
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] 再成長ソース / ドレインを有する InGaAs マルチゲート MOSFET 作製プロセス2015
- Author(s)
  木下治紀、金澤徹、祢津誠晃、三嶋裕一、宮本恭幸
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-16
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] Heavily doped epitaxially grown source in InGaAs MOSFET for high drain current density2013
- Author(s)
  Y. Miyamoto, T. Kanazawa, Y. Yonai, A. Kato, K. Ohsawa, M. Oda, T. Irisawa, and T. Tezuka
- Organizer
  IEEE Semiconductor Interface Specialists Conf.(SICS 2013)
- Place of Presentation
  Arlington, VA
- Year and Date
  2013-12-10
- Data Source
  KAKENHI-PROJECT-21226010
[Presentation] High current density of InGaAs MOSFET by epitaxially grown source2012
- Author(s)
  Y.Miyamoto
- Organizer
  Technical meeting on Electron Devices IEE of Japan
- Place of Presentation
  Atami
- Year and Date
  2012-05-08
- Data Source
  KAKENHI-PROJECT-21226010
[Presentation] エピタキシャル成長ソースによるInGaAs MOSFETの高電流密度化2012
- Author(s)
  宮本恭幸
- Organizer
  電気学会電子デバイス研究会
- Place of Presentation
  熱海
- Year and Date
  2012-03-08
- Data Source
  KAKENHI-PROJECT-19002009
[Presentation] High-currento-density InP ultrafine devices for high-speed operation2011
- Author(s)
  Y.Miyamoto
- Organizer
  Infrared and Millimeter Waves & Terahertz Electronics (IRMMW-THz 2011)
- Place of Presentation
  Huston, USA
- Year and Date
  2011-10-04
- Data Source
  KAKENHI-PROJECT-19002009
[Presentation] High-currento-density InP ultrafine devices for high-speed operation2011
- Author(s)
  Y.Miyamoto
- Organizer
  Infrared and Millimeter Waves & Terahertz Electronics (IRMMW-THz 2011)
- Place of Presentation
  Huston(招待講演)
- Year and Date
  2011-10-04
- Data Source
  KAKENHI-PROJECT-21226010
[Presentation] InP系化合物半導体を用いたMOSFETの技術動向2011
- Author(s)
  宮本恭幸
- Organizer
  Meeting of Electronics, Information and Systems Society, The Institute of Electrical Engineers of Japan
- Place of Presentation
  Toyama
- Year and Date
  2011-09-09
- Data Source
  KAKENHI-PROJECT-21226010
[Presentation] High current density of InGaAs MOSFET2011
- Author(s)
  Y.Miyamoto
- Organizer
  IEICE Technical Report of meeting on Electron Devices
- Place of Presentation
  Sendai(招待講演)
- Year and Date
  2011-12-14
- Data Source
  KAKENHI-PROJECT-21226010
[Presentation] InP系化合物半導体を用いたMOSFETの技術動向2011
- Author(s)
  宮本恭幸
- Organizer
  電気学会電子・情報・システム部門大会
- Place of Presentation
  富山
- Year and Date
  2011-09-09
- Data Source
  KAKENHI-PROJECT-19002009
[Presentation] InGaAs MOSFETの高電流密度化2011
- Author(s)
  宮本恭幸
- Organizer
  電子デバイス研究会(ED)
- Place of Presentation
  仙台
- Year and Date
  2011-12-14
- Data Source
  KAKENHI-PROJECT-19002009
[Presentation] InGaAs MISFET with epitaxially grown source2010
- Author(s)
  Y.Miyamoto
- Organizer
  The 3rd Int.Symp.Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2010)
- Place of Presentation
  Toyama, Japan
- Year and Date
  2010-06-23
- Data Source
  KAKENHI-PROJECT-19002009
[Presentation] Submicron InP/InGaAs composite channel MOSFETs with selectively regrown n+-source/drain buried into channel undercut2010
- Author(s)
  T. Kanazawa, K. Wakabayashi, H. Saito, R. Terao, T. Tajima, S. Ikeda, Y. Miyamoto, K. Furuya
- Organizer
  22nd Int. Conf. Indium Phosphide and Related Materials (IPRM20 10)
- Place of Presentation
  香川県高松市
- Year and Date
  2010-06-02
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] テラヘルツ帯におけるトランジスタ2010
- Author(s)
  宮本恭幸
- Organizer
  応用電子物性分科会研究例会
- Place of Presentation
  東京
- Year and Date
  2010-01-29
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] Submicron-channel InGaAs MISFET with epitaxially grown source2010
- Author(s)
  Y.Miyamoto
- Organizer
  10th IEEE Int.Conf.Solid-State and Integrated Circuit Technology (ICSICT-2010)
- Place of Presentation
  Shanghai, China
- Year and Date
  2010-11-02
- Data Source
  KAKENHI-PROJECT-19002009
[Presentation] InGaAs MISFET with epitaxially grown source2010
- Author(s)
  Y.Miyamoto
- Organizer
  The 3rd Int.Symp.Organic and Inorganic Electronic Materials and Related Nanotechnologies(EM-NANO 2010)
- Place of Presentation
  Toyama, Japan
- Year and Date
  2010-06-23
- Data Source
  KAKENHI-PROJECT-21226010
[Presentation] Transistors in terahertz range2010
- Author(s)
  Y.Miyamoto
- Organizer
  Japan.Appl.Phys.Soc., Applied Solid State Physics Division
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2010-01-29
- Data Source
  KAKENHI-PROJECT-19002009
[Presentation] Submicron-Channel InGaAs MISFET with epitaxially grown source2010
- Author(s)
  Y.Miyamoto
- Organizer
  10th IEEE Int.Conf.Solid-State and Integrated Circuit Technology(ICSICT-2010)
- Place of Presentation
  Shanghai, China
- Year and Date
  2010-11-02
- Data Source
  KAKENHI-PROJECT-21226010
[Presentation] Selective undercut etching for ultra narrow mesa structure in vertical InGaA s channel MISFET2010
- Author(s)
  H. Saito, Y. Miyamoto, K. Furuya
- Organizer
  22nd Int. Conf. Indium Phosphide and Related Materials (IPRM20 10)
- Place of Presentation
  香川県高松市
- Year and Date
  2010-06-02
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] テラヘルツ帯におけるトランジスタ(招待講演)2010
- Author(s)
  宮本恭幸
- Organizer
  応用電子物性分科会研究例会
- Place of Presentation
  東京
- Year and Date
  2010-01-29
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] InGaAs/InP MISFET2009
- Author(s)
  Y.Miyamoto
- Organizer
  Int.Symposium on Silicon Nano Devices in 2030
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2009-10-14
- Data Source
  KAKENHI-PROJECT-21226010
[Presentation] ヘテロランチャと真性チャネルを有する縦型InGaAs-MOSFET2009
- Author(s)
  齋藤尚史, 楠崎智樹, 松本豊, 宮本恭幸, 古屋一仁
- Organizer
  第56回応用物理学会関係連合講演会
- Place of Presentation
  つくば市
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] Vertical InGaAs FET with hetero-launcher and undoped channel2009
- Author(s)
  Y.Miyamoto
- Organizer
  International Symposium on Advanced Nanodevices and Nanotechnology(ISANN)
- Place of Presentation
  Maui, HI, USA
- Year and Date
  2009-12-02
- Data Source
  KAKENHI-PROJECT-19002009
[Presentation] InGaAs/InP MISFET with epitaxially grown source2009
- Author(s)
  Y.Miyamoto
- Organizer
  2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD)
- Place of Presentation
  Busan, Korea
- Year and Date
  2009-06-25
- Data Source
  KAKENHI-PROJECT-21226010
[Presentation] Evaluation of collector current spreading of InGaAs SHBT with 75-nm-thick collector2009
- Author(s)
  Y.Miyamoto
- Organizer
  2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD)
- Place of Presentation
  Busan, Korea
- Year and Date
  2009-06-25
- Data Source
  KAKENHI-PROJECT-19002009
[Presentation] In-situ Etching in MOCPE for Thin Collector of InP HBT with Buried SiO_2 Wire2009
- Author(s)
  Y.Miyamoto
- Organizer
  Topical Workshop on Heterostructure Materials (TWHM 2009)
- Place of Presentation
  Nagano, Japan
- Year and Date
  2009-08-26
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] Vertical InGaAs FET with hetero-launcher and undoped channel2009
- Author(s)
  Y.Miyamoto
- Organizer
  International Symposium on Advanced Nanodevices and Nanotechnology (ISANN)
- Place of Presentation
  Maui, HI, USA
- Year and Date
  2009-12-02
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] Vertical InGaAs FET with hetero-launcher and undoped channel2009
- Author(s)
  Y.Miyamoto
- Organizer
  International Symposium on Advanced Nanodevices and Nanotechnology(ISANN)
- Place of Presentation
  Maui, HI, USA
- Year and Date
  2009-12-02
- Data Source
  KAKENHI-PROJECT-21226010
[Presentation] Lateral Buried Growth of N+-InGaAs Source/Drain Region to Undercut InGaAs Channel Structure for High Drive Current N-type MOSFET2009
- Author(s)
  T. Kanazawa, H. Saito, K. Wakabayashi, Y. Miyamoto, K. Furuya
- Organizer
  2008 International Conference on Solid State Devices and Materials (SSDM2008)
- Place of Presentation
  つくば市
- Year and Date
  2009-09-24
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] Evaluation of collector current spreading of InGaAs SHBT with 75-nm-thick collector2009
- Author(s)
  Y.Miyamoto
- Organizer
  2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD)
- Place of Presentation
  Busan, Korea
- Year and Date
  2009-06-25
- Data Source
  KAKENHI-PROJECT-21226010
[Presentation] InGaAs/InP MISFET with ep itaxially grown source (Invited)2009
- Author(s)
  Y. Miyamoto
- Organizer
  2009 A sia-Pacific Workshop on Fundamentals an d Applications of Advanced Semiconducto r Devices (AWAD)
- Place of Presentation
  Busan, Korea
- Year and Date
  2009-06-25
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] InGaAs/InP MISFET (Invited)2009
- Author(s)
  Y.Miyamoto
- Organizer
  Int.Symposium on Silicon Nano Devices in 2030
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2009-10-14
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] InGaAs MISFET with hetero-laucher (Invited)2009
- Author(s)
  Y. Miyamoto
- Organizer
  2009 RCIQE International Seminar on "Advaneed Semiconductor Materials and Devices"
- Place of Presentation
  札幌市
- Year and Date
  2009-03-03
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] In-situ Etching in MOVPE for Thin Collector of InP HBT with Buried SiO_2 Wire2009
- Author(s)
  Y.Miyamoto
- Organizer
  Topical Workshop on Heterostructure Materials(TWHM 2009)
- Place of Presentation
  Nagano, Japan
- Year and Date
  2009-08-26
- Data Source
  KAKENHI-PROJECT-19002009
[Presentation] In-situ Etching in MOVPE for Thin Collector of InP HBT with Buried SiO_2 Wire2009
- Author(s)
  Y.Miyamoto
- Organizer
  Topical Workshop on Heterostructure Materials(TWHM 2009)
- Place of Presentation
  Nagano, Japan
- Year and Date
  2009-08-26
- Data Source
  KAKENHI-PROJECT-21226010
[Presentation] InGaAs/InP MISFET2009
- Author(s)
  Y.Miyamoto
- Organizer
  Int.Symposium on Silicon Nano Devices in 2030
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2009-10-14
- Data Source
  KAKENHI-PROJECT-19002009
[Presentation] ヘテロランチャと真性チャネルを有する縦型InGaAs-MOSFETの作製2009
- Author(s)
  齋藤尚史, 金澤徹, 宮本恭幸, 古屋一仁
- Organizer
  電気学会電子デバイス研究会
- Place of Presentation
  静岡県熱海市
- Year and Date
  2009-03-09
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] InGaAs/InP MISFET with epitaxially grown source (Invited)2009
- Author(s)
  Y.Miyamoto
- Organizer
  2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)
- Place of Presentation
  Busan, Korea,
- Year and Date
  2009-06-25
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] InGaAs MISFET with hetero-laucher (Invited)2009
- Author(s)
  Y. Miyamoto
- Organizer
  2009 RCIQE International Seminar on "Advanced Semiconductor Materials and Devices"
- Place of Presentation
  北海道札幌市
- Year and Date
  2009-03-03
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] III-Vナノデバイス2009
- Author(s)
  宮本恭幸, 金澤徹
- Organizer
  電子情報通信学会2009年全国大会
- Place of Presentation
  松山市
- Year and Date
  2009-03-18
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] III-Vナノデバイス2009
- Author(s)
  宮本恭幸
- Organizer
  電子情報通信学会2009年全国大会
- Place of Presentation
  松山市
- Year and Date
  2009-03-18
- Data Source
  KAKENHI-PROJECT-19002009
[Presentation] InGaAs/InP MISFET with epitaxially grown source2009
- Author(s)
  Y.Miyamoto
- Organizer
  2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD)
- Place of Presentation
  Busan, Korea
- Year and Date
  2009-06-25
- Data Source
  KAKENHI-PROJECT-19002009
[Presentation] InGaAs/InP MISFET (Invited)2009
- Author(s)
  Y. Miyamoto
- Organizer
  Int. Symposium on Silicon Nano Devices in 2030
- Place of Presentation
  東京
- Year and Date
  2009-10-14
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] Evaluation of collector current spreading of InGaAs SHBT with 75-nm-thick collector2009
- Author(s)
  Y.Miyamoto
- Organizer
  2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD),
- Place of Presentation
  Busan, Korea,
- Year and Date
  2009-06-25
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] InGaAs MISFET with hetero-launcher (Invited)2009
- Author(s)
  Y. Miyamoto
- Organizer
  2009 RCIQE International Seminar on "Advanced Semiconductor Materials and Devices"
- Place of Presentation
  Sapporo (Japan)
- Year and Date
  2009-03-03
- Data Source
  KAKENHI-PROJECT-19002009
[Presentation] InP系バリスティックトランジスタ2008
- Author(s)
  宮本恭幸
- Organizer
  電子情報通信学会ED研究会
- Place of Presentation
  札幌
- Year and Date
  2008-01-30
- Data Source
  KAKENHI-PROJECT-19002009
[Presentation] Hot electron transistor controlled by insulated gate with 70nm-wide emitter2008
- Author(s)
  H. Saito, T. Hino, Y. Miyamoto, K. Furuya
- Organizer
  20th Int. Conf. Indium Phosphide and Related Materials (IPRM2008)
- Place of Presentation
  Versailles, France
- Year and Date
  2008-05-26
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] モンテカルロ計算によるゲート制御ホットエレクトロトランジスタの遮断周波数解析2008
- Author(s)
  宮本恭幸
- Organizer
  Technical Meeting on Electron Devices, IEE Japan
- Place of Presentation
  水上
- Year and Date
  2008-03-06
- Data Source
  KAKENHI-PROJECT-19002009
[Presentation] InP系バリスティックトランジスタ(招待講演)2008
- Author(s)
  宮本恭幸、古屋一仁
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  北海道札幌市
- Year and Date
  2008-01-30
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] RF Characteristics of Schottky-Gate-Controlled Hot Electron Transistor2008
- Author(s)
  Y. Miyamoto, T. Hasegawa, H. Saito, K. Furuya
- Organizer
  IEEE Nanotechnology Materials and Devices Conference 2008
- Place of Presentation
  京都市
- Year and Date
  2008-10-22
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] 絶縁ゲート制御型ホットエレクトロントランジスタの電圧利得向上2008
- Author(s)
  齋藤尚史、孟伶我、宮本恭幸、古屋一仁
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  千葉県船橋市
- Year and Date
  2008-03-29
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] RF Characteristics of Schottky-Gate-Controlled Hot Electron Transistor2008
- Author(s)
  Y. Miyamoto
- Organizer
  IEEE Nanotechnology Materials and Devices Conference 2008
- Place of Presentation
  Kyoto (Japan)
- Year and Date
  2008-10-22
- Data Source
  KAKENHI-PROJECT-19002009
[Presentation] 絶縁ゲート制御型ホットエレクトロントランジスタのゲート制御能力向上2008
- Author(s)
  齋藤尚史, 孟伶我, 宮本恭幸, 古屋一仁
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  愛知県春日井市
- Year and Date
  2008-09-04
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] InP系バリスティックトランジスタ2008
- Author(s)
  宮本恭幸、古屋一仁
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  北海道札幌市
- Year and Date
  2008-01-30
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] モンテカルロ計算によるゲート制御ホットエレクトロントランジスタの遮断周波数解析2008
- Author(s)
  宮本恭幸、五十嵐満彦、山田朋宏、上澤岳史、古屋一仁
- Organizer
  電気学会電子デバイス研究会
- Place of Presentation
  群馬県みなかみ町
- Year and Date
  2008-03-06
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] ゲート制御ホットエレクトロントランジスタのバリスティックモデル解析2008
- Author(s)
  上澤岳史、山田朋宏、古屋一仁、宮本恭幸
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  千葉県船橋市
- Year and Date
  2008-03-29
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] Lateral Buried Growth of N+-InGaAs Source/Drain Region to Undercut InGaAs Channel Structure for High Drive Current N-type MOSFET2008
- Author(s)
  T. Kanazawa, H. Saito, K. Wakabayashi, Y. Miyamoto, K. Furuya
- Organizer
  2008 Int. Conf. Solid State Devices and Materials (SSDM2008)
- Place of Presentation
  茨城県つくば市
- Year and Date
  2008-09-24
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] Hot electron transistor controlled by insulated gate with 70nm-wide emitter2008
- Author(s)
  H. Saito, T. Hino, Y. Miyamoto, K. Furuya
- Organizer
  IEEE 20th Conference on Indium Phosphide and Related Materials
- Place of Presentation
  Versailles - France
- Year and Date
  2008-05-26
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] Fabrication of hot electron transistors controlled by insulated gate2007
- Author(s)
  T. Hino, A. Suwa, T. Hasegawa, H. Saito, M. Oono, Y. Miyamoto, K. Furuya
- Organizer
  19th Int. Conf. Indium Phosphide and Related Materials (IPRM2007)
- Place of Presentation
  島根県松江市
- Year and Date
  2007-05-15
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] ホットエレクトロントランジスタにおけるゲート絶縁性の確認2007
- Author(s)
  日野高宏, 齋藤尚史, 宮本恭幸,古屋一仁
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道札幌市
- Year and Date
  2007-09-04
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] Cutoff Frequency Characteristics of Insulated-gate Hot-electron Transistors by Monte Carlo Simulation2007
- Author(s)
  M. Igarashi, N. Machida, Y. Miyamoto, and K. Furuya
- Organizer
  15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors
- Place of Presentation
  東京都文京区
- Year and Date
  2007-07-23
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] Fabrication of hot electron transistors controlled by insulated gate2007
- Author(s)
  T. Hino, A. Suwa, T. Hasegawa, H. Saito, M. Oono, Y. Miyamoto, K. Furuya
- Organizer
  19th International Conference on Indium Phosphide and Related Materials (IPRM'07)
- Place of Presentation
  島根県松江市
- Year and Date
  2007-05-15
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] 先端ノンドープ構造ホットエレクトロンエミッタ充電時間解析2007
- Author(s)
  山田朋宏, 古屋一仁, 宮本恭幸
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道札幌市
- Year and Date
  2007-09-04
- Data Source
  KAKENHI-PROJECT-19206038
[Presentation] Body width dependence of subthreshold slope and on-current in GaAsSb/InGaAs Double Gate Vertical Tunnel FETs
- Author(s)
  K. Ohashi, M. Fujimatsu and Y. Miyamoto
- Organizer
  2014 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  つくば市
- Year and Date
  2014-09-08 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] InGaAs MOSFET Source Structures Toward High Speed/low Power Applications
- Author(s)
  Y. Miyamoto, T. Kanazawa, Y. Yonai, A. Kato, M. Fujimatsu, M. Kashiwano , K. Ohsawa, and K. Ohashi
- Organizer
  26th International Conference on InP and Related Materials (IPRM 2014)
- Place of Presentation
  Montpellier, France
- Year and Date
  2014-05-11 – 2014-05-14
- Invited
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] Improvement of Interface Property of HfO2/Al2O3/In0.53Ga0.47As Using Nitrogen Plasma Cleaning and Hydrogen Annealing
- Author(s)
  S. Netsu, T. Kanazawa, and Y. Miyamoto
- Organizer
  27th International Conference on Indium Phosphide and Related Materials
- Place of Presentation
  Santa Barbara, CA
- Year and Date
  2015-06-28 – 2015-07-02
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] InGaAs tri-gate MOSFETs with MOVPE regrown source/drain
- Author(s)
  Y. Mishima, T. Kanazawa, H. Kinoshita, E. Uehara, and Y. Miyamoto
- Organizer
  72nd Device Research Conference (DRC)
- Place of Presentation
  Santa Barbara, CA
- Year and Date
  2014-06-22 – 2014-06-25
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] GaAsSb/InGaAs縦型トンネルFET
- Author(s)
  宮本恭幸
- Organizer
  IEICE Technical Meeting on Electron Devices
- Place of Presentation
  京都大学（京都府）
- Data Source
  KAKENHI-PROJECT-21226010
[Presentation] 超高速トランジスタ技術の現状と展望
- Author(s)
  宮本恭幸
- Organizer
  2013年電子情報通信学会総合大会
- Place of Presentation
  岐阜大学（岐阜県）
- Invited
- Data Source
  KAKENHI-PROJECT-21226010
[Presentation] Operation of 13-nm channel length InGaAs-MOSFET with n-InP source
- Author(s)
  K. Ohsawa, Y. Mishima and Y. Miyamoto
- Organizer
  27th International Conference on Indium Phosphide and Related Materials
- Place of Presentation
  Santa Barbara, CA
- Year and Date
  2015-06-28 – 2015-07-02
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] Growth Process for High Performance of InGaAs MOSFETs
- Author(s)
  Y. Miyamoto, T. Kanazawa, Y. Yonai, K. Ohsawa, Y. Mishima, T. Irisawa, M. Oda, and T. Tezuka
- Organizer
  72nd Device Research Conference (DRC)
- Place of Presentation
  Santa Barbara, CA
- Year and Date
  2014-06-22 – 2014-06-25
- Invited
- Data Source
  KAKENHI-PROJECT-26249046

1. FURUYA Kazuhito (40092572)

# of Collaborated Projects: 9 results

# of Collaborated Products: 11 results
2. ASADA Masahiro (30167887)

# of Collaborated Projects: 8 results

# of Collaborated Products: 0 results
3. SUHARA Michihiko (80251635)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
4. ARAI Shigehisa (30151137)

# of Collaborated Projects: 4 results

# of Collaborated Products: 0 results
5. NISHIYAMA Nobuhiko (80447531)

# of Collaborated Projects: 4 results

# of Collaborated Products: 8 results
6. MACHIDA Nobuya (70313335)

# of Collaborated Projects: 4 results

# of Collaborated Products: 3 results
7. SUZUKI Safumi (40550471)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
8. MARUYAMA Takeo (60345379)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. KANAZAWA Toru (40514922)

# of Collaborated Projects: 1 results

# of Collaborated Products: 10 results
10. MAJIMA Yutaka (40293071)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
11. 渡辺正裕 (00251637)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 鈴木寿一 (80362028)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 末松安晴 (40016316)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. 林侑介 (00800484)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. 上杉謙次郎 (40867305)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. 佐々木拓生 (90586190)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. 三宅秀人 (70209881)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. 福田浩一 (00586282)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
19. 菅原聡 (40282842)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
20. 荒井昌和 (90522003)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
21. 後藤高寛 (70827914)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
22. AMEMIYA Tomohiro

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results

Miyamoto Yasuyuki 宮本 恭幸

MIYAMOTO Yasuyuki 宮本 恭幸

宮本 泰幸 ミヤモト ヤスユキ

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Creation of Lateral Heterojunction Bipolar Transistors by Selective Growth in SiO2 CavitiesPrincipal Investigator

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Creation of compound semiconductor lateral heterojunctions and their application to electronic devicesPrincipal Investigator

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HfS2を用いた原子層厚ヘテロ接合による超低消費電力デバイスPrincipal Investigator

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Complementary vertical tunnel FET aiming for low voltage and high speed operation by heterostructure design and miniaturizationPrincipal Investigator

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Research on vertical InP-related hot electron transistors with insulated gatePrincipal Investigator

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Research for ultra-fast operation of InP HBT by ballistic transportation in collectorPrincipal Investigator

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Ultrafine/High-speed electron devices based on buried nano-metal-wires in compound semiconductorsPrincipal Investigator

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Miyamoto Yasuyuki 宮本恭幸

MIYAMOTO Yasuyuki 宮本恭幸

宮本泰幸ミヤモトヤスユキ