SATO Masataka 佐藤政孝

Researcher Number	40215843
Affiliation (based on the past Project Information) *help	2002 – 2004: Hsei University, Hosei University, Research Center of Ion Beam Technology, Professor 2000 – 2001: Hosei University, Research Center of Ion Beam Technology, Associate Professor, イオンビーム工学研究所, 助教授 1998 – 1999: イオンビーム工学研究所, 助教授 1997: Hosei Univ.Engineering, Professor, イオンビーム工学研究所, 助教授 1997: 法政大学, イオン工学研究所, 助教授
Review Section/Research Field	Principal Investigator Applied materials science/Crystal engineering / Applied materials science/Crystal engineering Except Principal Investigator Electronic materials/Electric materials / Applied materials science/Crystal engineering
Keywords	Principal Investigator Electrical activation / Ion implantation / Silicon carbide / リン不純物 / 再結晶化過程 / リン / 電気的活性化 / イオン注入 / 炭化シリコン / Crystallization process … More / Al impurity / P impurity / 4H-SiC(1120) / アルミニウム不純物 / 不純物効果 / 再結晶化速度 / イオン注入欠陥層 / 非晶質層 / アルミニウム / Crystallization Process / Nitrogen impurity / Phosphorus impurity / リンイオン注入 / 窒素イオン注入 / 置換格子位置 / 電気特性 / 窒素不純物 / 窒素 … More Except Principal Investigator SOI / IBIEC / SiGe / CeO_2 / Nano-cluster of Fe-Co alloy / Mossbauer spectroscopy / Superparamagnetism / Tunneling conduction / Nanosized Clusters / Giant Magnetoresistance / メスバウアー分光法 / 鉄イオン注入によるグラニュラー層 / 超微粒子 / Fe-Co合金微粒子 / イオン注入によるグラニュラー層形成 / Fe-Co合金超微粒子 / メスバウアー分光 / 超常磁性 / 電子トンネリング / ナノサイズ超微粒子 / 巨大磁気抵抗効果 / Ion Beam Sputtering / Interface Reaction / Amorphous Silicon / Hetro Epitaxy / 核的散乱 / イオンの電子 / 固相エピタキシ / ランプ加熱 / イオンビームスパッタ / 界面反応 / アモルファスシリコン / イオンビーム誘起結晶化 / ヘテロエピタキシ / Thin layr / Delamination / Sol / Si / H / Ion Implantation / ハクマク / LSI / はく離 / イオン注入 / 薄膜 / デラミネーション / シリコン / 水素イオン Less

Investigation of impurity effect on re-crystallization process in heavily implanted silicon carbidePrincipal Investigator
- Principal Investigator
  
  SATOH Masataka
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Hosei University
Investigation of the subustituional behavior and the electrical activation of implanted P and N impurities in SiCPrincipal Investigator
- Principal Investigator
  
  SATOH Masataka
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Hsei University
Synthesis of Granular Layers by Ion Implantation and the GMR Properties
- Principal Investigator
  
  HAYASHI Nobuyuki
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Kurume Institute of Technology
  Hosei University
Epitaxial growth of Si on Insulator using Ion Beam Induced Epitaxial Crystallization
- Principal Investigator
  
  YAMAMOTO Yasuhiro
- Project Period (FY)
  1998 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Hosei University
Fundamental Research of the Delamination by H^+ Implantation
- Principal Investigator
  
  HARA Tohru
- Project Period (FY)
  1996 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hosei Univ.

All 2006 2003

All Journal Article

[Journal Article] Recrystallization process of phosphorus ion implanted 4H-SiC(11-20)2006
- Author(s)
  M.Satoh, T.Hitomi, T.Suzuki
- Journal Title
  
  Nuclear Instruments and Methods in Physics Research B Vol.242, No.1-2
  
  Pages: 672-629
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15560012
[Journal Article] Recrystallization process of phosphorus ion implanted 4H-SiC(11-20)2006
- Author(s)
  M.Satoh, T.Hitomi, T.Suzuki
- Journal Title
  
  Nuclear Instruments and Methods in Physics Research B 242
  
  Pages: 672-629
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15560012
[Journal Article] High Electrical Activation of Implanted Phosphorus in the Fully Amorphized Implant-Layer by Solid-Phase Epitaxy on (1120)-Oriented 6H-SiC2003
- Author(s)
  Tomonori Nakamura, Hitoshi Tanabe, Masataka Satoh
- Journal Title
  
  Japanese Journal of Applied Physics Vol.42, Part 1 No.1
  
  Pages: 63-66
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13650019
[Journal Article] High Electrical Activation of Implanted Phosphorus in the Fully Amorphized Implant-Layer by Solid-Phase Epitaxy on (1120)-Oriented 6H-SiC2003
- Author(s)
  T.Nakamura, H.Tanabe, M.Satoh
- Journal Title
  
  Japanese Journal of Applied Physics 42
  
  Pages: 63-66
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13650019
[Journal Article] Electrical Properties of the regrown implantation-induced amorphous layer on (1100)- and (1120)-oriented 6H-SiC2003
- Author(s)
  T.Nakamura, H.Tanabe, T.Hitomi, M.Satoh
- Journal Title
  
  Nuclear Instruments and Methods in Physics Research B 206
  
  Pages: 956-959
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13650019
[Journal Article] Electrical Properties of the regrown implantation-induced amorphous layer on (1100)- and (1120)-oriented 6H-SiC2003
- Author(s)
  Tomonori Nakamura, Hitoshi Tanabe, Takeshi Hitomi, Masataka Satoh
- Journal Title
  
  Nuclear Instruments and Methods in Physics Research B Vol.206
  
  Pages: 956-959
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13650019

1. YAMAMOTO Yasuhiro (50139383)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
2. HARA Tohru (00147886)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. INOUE Tomoyasu (60193596)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. HAYASHI Nobuyuki (30318612)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. TORIYAMA Tamotsu (40016176)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. HASUYAMA Hiroki (00037962)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. SAKAMOTO Isao

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

SATO Masataka 佐藤 政孝

Research Projects

Research Products

Co-Researchers

Investigation of impurity effect on re-crystallization process in heavily implanted silicon carbidePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Investigation of the subustituional behavior and the electrical activation of implanted P and N impurities in SiCPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Synthesis of Granular Layers by Ion Implantation and the GMR Properties

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Epitaxial growth of Si on Insulator using Ion Beam Induced Epitaxial Crystallization

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Fundamental Research of the Delamination by H^+ Implantation

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Recrystallization process of phosphorus ion implanted 4H-SiC(11-20)2006

Author(s)

Journal Title

Description

Data Source

[Journal Article] Recrystallization process of phosphorus ion implanted 4H-SiC(11-20)2006

Author(s)

Journal Title

Description

Data Source

[Journal Article] High Electrical Activation of Implanted Phosphorus in the Fully Amorphized Implant-Layer by Solid-Phase Epitaxy on (1120)-Oriented 6H-SiC2003

Author(s)

Journal Title

Description

Data Source

[Journal Article] High Electrical Activation of Implanted Phosphorus in the Fully Amorphized Implant-Layer by Solid-Phase Epitaxy on (1120)-Oriented 6H-SiC2003

Author(s)

Journal Title

Description

Data Source

[Journal Article] Electrical Properties of the regrown implantation-induced amorphous layer on (1100)- and (1120)-oriented 6H-SiC2003

Author(s)

Journal Title

Description

Data Source

[Journal Article] Electrical Properties of the regrown implantation-induced amorphous layer on (1100)- and (1120)-oriented 6H-SiC2003

Author(s)

Journal Title

Description

Data Source

SATO Masataka 佐藤政孝