Nishizawa Shin-ichi 西澤伸一

… Alternative Names

NISHIZAWA Shin-ichi 西澤伸一

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Researcher Number	40267414
Other IDs
Affiliation (Current)	2025: 九州大学, 応用力学研究所, 教授
Affiliation (based on the past Project Information) *help	2017 – 2020: 九州大学, 応用力学研究所, 教授 2016: 国立研究開発法人産業技術総合研究所, 省エネルギー研究部門, 上級主任研究員 2015: 国立研究開発法人産業技術総合研究所, エネルギー技術部門, 研究員 2015: 産業技術総合研究所, エネルギー技術部門, グループリーダー 2014: 独立行政法人産業技術総合研究所, エネルギー技術研究部門, グループ長 … More 2014: 独立行政法人産業技術総合研究所, エネルギー技術部門, 研究グループ長 2013 – 2014: 独立行政法人産業技術総合研究所, エネルギー技術研究部門, 研究グループ長 2013: 独立行政法人産業技術総合研究所, 電力エネルギー基盤グループ, グループ長 2012: 産業技術総合研究所, エネルギー技術研究部門, 研究グループ長 2012: 産業技術総合研究所, エネルギー技術部門, グループ長 Less
Review Section/Research Field	Principal Investigator Basic Section 30010:Crystal engineering-related Except Principal Investigator Crystal engineering / Power engineering/Power conversion/Electric machinery / Applied materials science/Crystal engineering
Keywords	Principal Investigator 数値解析 / SiC / エネルギー / 多形 / 表面 / 不純物 / 結晶成長 / 炭化ケイ素 Except Principal Investigator 結晶成長 / 結晶工学 … More / 欠陥制御 / マルチフジックス / マルチフィジックス / シミュレーション / 実装 / 高温動作 / パワーMOSFET / パワーSOC / 集積化パワーシステム / DC-DCコンバータ / パワーIC / SOD / パワーSoC / ウエハー接合技術 / SOD基板 / 抜熱 / 排熱 / Si on Diamond / 集積化電源 / 3次元解析 / 結晶性長 / 残留応力 / 転位 / シリコンカーバイド / SiC / ワイドバンドギャップ / 昇華法 Less

Polytype Controlled SiC Single Crystal GrwothPrincipal Investigator
- Principal Investigator
  
  NISHIZAWA Shin-ichi
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Kyushu University
Development of simulator of crystal growth based on multi-physics
- Principal Investigator
  
  KAKIMOTO KOICHI
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Crystal engineering
- Research Institution
  Kyushu University
Development of macro-nano combined growth method for energy saving
- Principal Investigator
  
  KAKIMOTO Koichi
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Kyushu University
Study on a substrate for ultra high density power supply on chip
- Principal Investigator
  
  Matsumoto Satoshi
- Project Period (FY)
  2012 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Power engineering/Power conversion/Electric machinery
- Research Institution
  Kyushu Institute of Technology

All 2021 2019 2018 2015 2014 2013 2012 Other

All Journal Article Presentation

[Journal Article] Investigation of acceptable breakdown voltage variation for parallel-connected SiC MOSFETs during unclamped inductive switching test2021
- Author(s)
  Zaiqi Lou, Wataru Saito and Shin-ichi Nishizawa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 60 Issue: SB Pages: SBBD18-SBBD18
- DOI
  10.35848/1347-4065/abebc1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H01891
[Journal Article] Effect of nitrogen and aluminium on silicon carbide polytype stability2019
- Author(s)
  S.Nishizawa,, F.Mercier
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 518 Pages: 99-102
- DOI
  10.1016/j.jcrysgro.2019.04.018
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01891
[Journal Article] Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth2018
- Author(s)
  Liu Xin、Harada Hirofumi、Miyamura Yoshiji、Han Xue-feng、Nakano Satoshi、Nishizawa Shin-ichi、Kakimoto Koichi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 499 Pages: 8-12
- DOI
  10.1016/j.jcrysgro.2018.07.020
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H03859
[Journal Article] Relationship between carbon concentration and carrier lifetime in CZ-Si crystals2018
- Author(s)
  Miyamura Y.、Harada H.、Nakano S.、Nishizawa S.、Kakimoto K.
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 486 Pages: 56-59
- DOI
  10.1016/j.jcrysgro.2018.01.020
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H03859
[Journal Article] Study of the effect of doped impurities on polytype stability during PVT growth of SiC using 2D nucleation theory2014
- Author(s)
  T. Shiramomo, B. Gao, F. Mercier, S. Nishizawa, S. Nakano, K. Kakimoto
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 385 Pages: 95-99
- DOI
  10.1016/j.jcrysgro.2013.03.036
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-24360012
[Journal Article] Impact of Silicon on Diamond Structure for Power-Supply on Chip Application2014
- Author(s)
  K. Nakagawa, T. Kodama, S. Matsumoto, T. Yamada, M. Hasegawa, and S. Nishizawa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 Issue: 4S Pages: 1-4
- DOI
  10.7567/jjap.53.04ep16
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360111
[Journal Article] Impact of silicon on diamond structure for power-supply on chip applications2014
- Author(s)
  K. Nakagawa, T. Kodama, S. Matsumoto, T. Yamada, M. Hasegawa, and S. Nishizawa
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 53 Issue: 4S Pages: 04DP09-04DP09
- DOI
  10.7567/jjap.54.04dp09
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360111
[Journal Article] Analysis of growth velocity of SiC growth and by the Physical vapor transport method2012
- Author(s)
  Koichi Kakimoto, Bing Gao, Takuya Shiramomo, Satoshi Nakano and Shin-ichi Nishizawa
- Journal Title
  
  Materials Science Forum
  
  Volume: 717-720 Pages: 25-28
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360012
[Journal Article] Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory2012
- Author(s)
  T Shiramomo, B. Gao, F. Mercier, S. Nishizawa, S. Nakano Y Kangawa, K. Kakimoto
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 352 Issue: 1 Pages: 177-180
- DOI
  10.1016/j.jcrysgro.2012.01.023
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24360012
[Presentation] Effect of Nitrogen / Aluminum on Silicon Carbide Poly-type Stability2018
- Author(s)
  Shin-ichi NISHIZAWA and Frédéric Mercier
- Organizer
  the 9th International Workshop on Modeling in Crystal Growth
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01891
[Presentation] The Silicon on Diamond Structure by low temperature bonding technique2015
- Author(s)
  S. Duangchan, U. Uchikawa, U. Koshikawa, A. baba, K. Nakagawa, S.Matsumoto, M.Hasagawa, and S.Nishizawa
- Organizer
  IEEE Electric Components and Technology Conference 2015 (ECTC2015)
- Place of Presentation
  San Diego, USA
- Year and Date
  2015-05-26
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-24360111
[Presentation] PVT を用いたSiC 結晶成長における不純物混入解析2014
- Author(s)
  柿本浩一，Bing Gao，中野　智，寒川義裕，西澤伸一
- Organizer
  第61 回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス
- Data Source
  KAKENHI-PROJECT-24360012
[Presentation] Study of the effect of doped nitrogen and aluminum on polytype stability during PVT growth of SiC using 2D nucleation theory2013
- Author(s)
  Koichi Kakimoto, Takuya Shiramomo, Bing Gao, Frederic Mercier, Shin-ichi Nishizawa, Satoshi Nakano
- Organizer
  17th International Conference on Crystal Growth and Epitaxy (ICCGE-17)
- Place of Presentation
  Warsaw, Poland
- Data Source
  KAKENHI-PROJECT-24360012
[Presentation] SiCバルク結晶成長の現状と将来2013
- Author(s)
  柿本浩一、Gao Bing 、白桃拓哉、寨川義裕、西澤伸一
- Organizer
  パワーデバイス用シリコンおよび関連半導体材料にする研究会(第3回) 2013年千葉工業大学
- Place of Presentation
  千葉工業大学(招待講演)
- Year and Date
  2013-03-15
- Data Source
  KAKENHI-PROJECT-24360012
[Presentation] PVT成長法におけるAlexander-Haasenモデルを用いた4H-SiC単結晶の転位密度塑性挙動モデル2013
- Author(s)
  高冰，西澤伸一，柿本浩一
- Organizer
  第43回結晶成長国内会議
- Place of Presentation
  長野市生涯学習センター
- Data Source
  KAKENHI-PROJECT-24360012
[Presentation] 昇華法成長SiC結晶中への不純物混入解析2013
- Author(s)
  柿本浩一，高冰，白桃拓哉，西澤伸一，中野智，寒川義裕
- Organizer
  第43回結晶成長国内会議
- Place of Presentation
  長野市生涯学習センター
- Data Source
  KAKENHI-PROJECT-24360012
[Presentation] Dislocation density-based modeling of plastic deformation of 4H-SiC single crystals by the Alexander-Haasen model during PVT growth2013
- Author(s)
  B. Gao, S. Nishizawa, K. Kakimoto
- Organizer
  第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学、京都
- Data Source
  KAKENHI-PROJECT-24360012
[Presentation] Numerical predict ions of a new SOI structure using thin-diamond film used as insulator2012
- Author(s)
  T. Kodama, S. Matsumoto, T. Yamada, M. Hasegawa, and S. Nishizawa
- Organizer
  International Workshop on Power Supply on Chip
- Place of Presentation
  San Francisco
- Year and Date
  2012-11-16
- Data Source
  KAKENHI-PROJECT-24360111
[Presentation] PVTを用いたSiCバルク結晶成長における転位および多結晶分布の非定常数値解析2012
- Author(s)
  高冰, 中野智, 西澤伸一, 柿本浩一
- Organizer
  第42回結晶成長国内会議NCCG-42
- Place of Presentation
  九州大学筑紫キャンパス
- Year and Date
  2012-11-09
- Data Source
  KAKENHI-PROJECT-24360012
[Presentation] ダイヤモンド薄膜を絶縁膜として用いたパワーSOC用SOI基板のシミュレーションによる検討2012
- Author(s)
  児玉拓也、松本聡、西澤伸一
- Organizer
  電気学会電子デバイス・半導体電力変換合同研究会
- Place of Presentation
  浜松
- Year and Date
  2012-10-26
- Data Source
  KAKENHI-PROJECT-24360111
[Presentation] 二次元核形成理論を用いたSiC昇華法成長における多形安定性の非定常解析
- Author(s)
  荒木清道，高冰，中野智，西澤伸一，柿本浩一
- Organizer
  NCCG-44
- Place of Presentation
  学習院創立百周年記念会館
- Year and Date
  2014-11-06 – 2014-11-08
- Data Source
  KAKENHI-PROJECT-24360012
[Presentation] Impact of Silicon on Diamond Structure for Power-Supply on Chip Applications
- Author(s)
  K. Nakagawa, T. Kodama, S. Matsumoto, T. Yamada, M. Hasegawa, and S. Nishizawa
- Organizer
  2013 Solid State Devices & Materials
- Place of Presentation
  福岡
- Data Source
  KAKENHI-PROJECT-24360111
[Presentation] Wafer technology for future power device
- Author(s)
  S.Nishizawa
- Organizer
  7TH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES
- Place of Presentation
  Delhi
- Invited
- Data Source
  KAKENHI-PROJECT-24360111
[Presentation] 私達の生活を支えるエレクトロニクス材料
- Author(s)
  西澤伸一
- Organizer
  第１６５回ICSEADアジア講座
- Place of Presentation
  北九州
- Invited
- Data Source
  KAKENHI-PROJECT-24360111
[Presentation] 二次元核形成理論を用いたSiC 昇華法成長における多形安定性の非定常解析
- Author(s)
  荒木清道，高　　冰，中野　智，西澤伸一，柿本浩一
- Organizer
  2014年第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学札幌キャンパス
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-24360012

1. KAKIMOTO Koichi (90291509)

# of Collaborated Projects: 3 results

# of Collaborated Products: 14 results
2. NAKANO Satoshi (80423557)

# of Collaborated Projects: 2 results

# of Collaborated Products: 11 results
3. Matsumoto Satoshi (10577282)

# of Collaborated Projects: 1 results

# of Collaborated Products: 6 results
4. SHINKAI Shinichi (90374785)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. BABA Akiyoshi (80304872)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results

Nishizawa Shin-ichi 西澤 伸一

NISHIZAWA Shin-ichi 西澤 伸一

Research Projects

Research Products

Co-Researchers

Polytype Controlled SiC Single Crystal GrwothPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of simulator of crystal growth based on multi-physics

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of macro-nano combined growth method for energy saving

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Study on a substrate for ultra high density power supply on chip

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Investigation of acceptable breakdown voltage variation for parallel-connected SiC MOSFETs during unclamped inductive switching test2021

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Effect of nitrogen and aluminium on silicon carbide polytype stability2019

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Numerical analyses and experimental validations on transport and control of carbon in Czochralski silicon crystal growth2018

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Relationship between carbon concentration and carrier lifetime in CZ-Si crystals2018

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Study of the effect of doped impurities on polytype stability during PVT growth of SiC using 2D nucleation theory2014

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Impact of Silicon on Diamond Structure for Power-Supply on Chip Application2014

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Impact of silicon on diamond structure for power-supply on chip applications2014

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Analysis of growth velocity of SiC growth and by the Physical vapor transport method2012

Author(s)

Journal Title

Data Source

[Journal Article] Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory2012

Author(s)

Journal Title

DOI

Data Source

[Presentation] Effect of Nitrogen / Aluminum on Silicon Carbide Poly-type Stability2018

Author(s)

Organizer

Data Source

[Presentation] The Silicon on Diamond Structure by low temperature bonding technique2015

Author(s)

Organizer

Nishizawa Shin-ichi 西澤伸一

NISHIZAWA Shin-ichi 西澤伸一