FUJINAGA Kiyohisa 藤永清久

Researcher Number	40285515
Other IDs
External Links
Affiliation (based on the past Project Information) *help	2013: 北海道科学大学, 創生工学部, 教授 2010 – 2012: 北海道工業大学, 創生工学部, 教授 2004 – 2006: 北海道工業大学, 工学部, 教授 1998 – 2000: 北海道工業大学, 工学部, 教授 1997: 北海道工業大学, 工学部・経営工学科, 教授
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / 電子デバイス・機器工学
Keywords	Principal Investigator SOI / MOSFET / 電界効果素子 / SIMOX / SiGe / CVD / 量子井戸 / Hole Mobility / Buried Channel / Quantum Well … More / 移動度 / 正孔 / 転位密度 / 電界効果デバイス / サブスレッショルド特性 / ダブルチャネル / ホール移動度 / 埋め込みチャネル / hole current / transistor / quantum well / germanium / silicon / 電界解効果素子 / ホール電流 / 気相成長法 / トランジスタ / ゲルマニウム / シリコン / 光誘起 / 光誘起電流 / SiGe量子井戸 / シミュレーション / 電子デバイス・機器 / 半導体物性 / 先端機能デバイス / 結晶成長 / 実効移動度 / 正孔電流 / バックゲート / シリコン・ゲルマニウム Less

Investigation of SiGe/Si hetero interface to provide a device for producing multi-valued signals using light-induced current modulationPrincipal Investigator
- Principal Investigator
  
  FUJINAGA Kiyohisa
- Project Period (FY)
  2010 – 2013
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Hokkaido Institute of Technology
Study on Nanometer SOI Device StructurePrincipal Investigator
- Principal Investigator
  
  FUJINAGA Kiyohisa
- Project Period (FY)
  2004 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Hokkaido Institute of Technology
INVESTIGATION ON ELECTRONIC CHARACTERISTICS OF SiGe MULTI-QUANTUM WELL CHANNEL MOSFETs ON A SOI SUBSTRATEPrincipal Investigator
- Principal Investigator
  
  FUJINAGA Kiyohisa
- Project Period (FY)
  1997 – 2000
- Research Category
  
  Grant-in-Aid for Scientific Research (B).
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  HOKKAIDO INSTITUTE OF TECHNOLOGY

All 2014 2013 2012 2007 2006 2005 2004

All Journal Article Presentation

[Journal Article] SIMOX基板の埋め込み酸化膜をゲートに用いたSiGe p-MOSFETの電気特性2014
- Author(s)
  藤永清久
- Journal Title
  
  電子情報通信学会論文誌C
  
  Volume: J97-C Pages: 246-248
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560339
[Journal Article] SIMOX基板の埋め込み酸化膜をゲート酸化膜に用いたSiGe p-MOSFETの電気特性2014
- Author(s)
  藤永清久
- Journal Title
  
  電子情報通信学会論文誌C
  
  Volume: Vol. J97-C,No. 5 Pages: 246-248
- URL
  http://search.ieice.org/bin/index.php?category=C&lang=J&curr=1
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560339
[Journal Article] Practice of HDL Education Providing Students a Sense of Achievement2014
- Author(s)
  藤永清久
- Journal Title
  
  Journal of JSEE
  
  Volume: 62 Issue: 1 Pages: 1_72-1_76
- DOI
  10.4307/jsee.62.1_72
- NAID
  130003393184
- ISSN
  1341-2167, 1881-0764
- Language
  Japanese
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560339
[Journal Article] Effective hole mobility in SiGe buried-channel well MOSFETs on SOI by low-pressure CVD2013
- Author(s)
  K. Fujinaga
- Journal Title
  
  ECS. J. Solid State Sci. Technol.
  
  Volume: Vol. 2, No. 9 Issue: 9 Pages: Q142-Q146
- DOI
  10.1149/2.007309jss
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22560339
[Journal Article] Effective Hole mobilities in the buried channel of multiple SiGe quantum wells grown by ultra-clean low-pressure CVD2007
- Author(s)
  K.Fujinaga
- Journal Title
  
  Semiconductor Technology 2007・1
  
  Pages: 15-22
- Data Source
  KAKENHI-PROJECT-16560305
[Journal Article] Effective hole mobilities in the buried channel of multiple SiGe quantum wells grown by ultra-clean low-pressure CVD2007
- Author(s)
  K.Fujinaga
- Journal Title
  
  Semiconductor Technology PV2007-03
  
  Pages: 15-22
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560305
[Journal Article] Buried-channel field effect transistors of triple SiGe quantum wells on SOI2006
- Author(s)
  K.Fujinaga
- Journal Title
  
  SiGe and Ge : Materials, Processing, and Devices 3・7
  
  Pages: 973-979
- Data Source
  KAKENHI-PROJECT-16560305
[Journal Article] Buried-channel field effect transistors of triple SiGe quantum wells on SOI.2006
- Author(s)
  K.Fujinaga
- Journal Title
  
  SiGe ＆ Ge Materials, Processing, and Devices Vol.3
  
  Pages: 973-979
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560305
[Journal Article] Buried - channel field effect transistors of triple SiGe quantum wells on SOI2006
- Author(s)
  K.Fujinaga
- Journal Title
  
  SiGe ＆ Ge Materials,Processing,and Devices 13
  
  Pages: 973-979
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560305
[Journal Article] Electrical investigation of Si/SiGe layers grown on a nanometer-thick SOI by CVD.2005
- Author(s)
  K.Fujinaga
- Journal Title
  
  Electrochemical and Solid-State Lett. Vol.7
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-16560305
[Journal Article] Electrical investigation of Si/SiGe layers grown on a nanometer - thick SOI by CVD2005
- Author(s)
  K.Fujinaga
- Journal Title
  
  Electrochemical and Solid-State Lett 7
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-16560305
[Journal Article] A check system of process machine schedules by mobile agents2004
- Author(s)
  K.Fujinaga
- Journal Title
  
  Proceedings of 5^<th> APIEMS 2004
  
  Pages: 1911-1917
- Data Source
  KAKENHI-PROJECT-16560305
[Journal Article] Electrical Investigation of Si/SiGe layers grown on a nanometer-thick SOI by CVD2004
- Author(s)
  K.Fujinaga
- Journal Title
  
  Electrochemical and Solid-State Letters 7
- Data Source
  KAKENHI-PROJECT-16560305
[Journal Article] Hole mobilities in the Si/SiGe grown on nanometer SOI of SIMOX2004
- Author(s)
  K.Fujinaga
- Journal Title
  
  Proceedings of 7^<th> IEEE-ICSICT 2004
  
  Pages: 2218-2221
- Data Source
  KAKENHI-PROJECT-16560305
[Presentation] エージェント生産システムにおけるハイブリッドスケジューリングに関する研究2013
- Author(s)
  蔵徹郎,藤永清久
- Organizer
  電子情報通信学会北海道支部インターネットシンポジウム
- Data Source
  KAKENHI-PROJECT-22560339
[Presentation] ジョブショップスケジューリングにおけるGAと再帰的伝搬法の比較検討2012
- Author(s)
  蔵徹郎,藤永清久
- Organizer
  日本経営工学会秋季研究大会
- Place of Presentation
  大阪工業大学(予稿集,D16)
- Data Source
  KAKENHI-PROJECT-22560339
[Presentation] 機械故障による生産遅延発生時における再スケジューリングの最適化2012
- Author(s)
  蔵徹郎,藤永清久
- Organizer
  電子情報通信学会基礎・境界ソサイエティ大会
- Place of Presentation
  岐阜大学(基礎・境界論文集,A-12-8)
- Data Source
  KAKENHI-PROJECT-22560339
[Presentation] 再帰的伝搬法に基づく自立分散型のマシンスケジューリング2012
- Author(s)
  蔵徹郎,藤永清久
- Organizer
  電子情報通信学会北海道支部インターネットシンポジウム
- Data Source
  KAKENHI-PROJECT-22560339
[Presentation] GAと再帰的伝搬法を用いたジョブショップスケジューリング2012
- Author(s)
  蔵徹郎,藤永清久
- Organizer
  電気・情報関係学会北海道支部連合大会
- Place of Presentation
  北海道大学(No. 189)
- Data Source
  KAKENHI-PROJECT-22560339

1. 渋谷正弘 (00196453)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

FUJINAGA Kiyohisa 藤永 清久

Research Projects

Research Products

Co-Researchers

Investigation of SiGe/Si hetero interface to provide a device for producing multi-valued signals using light-induced current modulationPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Study on Nanometer SOI Device StructurePrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

INVESTIGATION ON ELECTRONIC CHARACTERISTICS OF SiGe MULTI-QUANTUM WELL CHANNEL MOSFETs ON A SOI SUBSTRATEPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] SIMOX基板の埋め込み酸化膜をゲートに用いたSiGe p-MOSFETの電気特性2014

Author(s)

Journal Title

Data Source

[Journal Article] SIMOX基板の埋め込み酸化膜をゲート酸化膜に用いたSiGe p-MOSFETの電気特性2014

Author(s)

Journal Title

URL

Data Source

[Journal Article] Practice of HDL Education Providing Students a Sense of Achievement2014

Author(s)

Journal Title

DOI

NAID

ISSN

Language

Data Source

[Journal Article] Effective hole mobility in SiGe buried-channel well MOSFETs on SOI by low-pressure CVD2013

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Effective Hole mobilities in the buried channel of multiple SiGe quantum wells grown by ultra-clean low-pressure CVD2007

Author(s)

Journal Title

Data Source

[Journal Article] Effective hole mobilities in the buried channel of multiple SiGe quantum wells grown by ultra-clean low-pressure CVD2007

Author(s)

Journal Title

Description

Data Source

[Journal Article] Buried-channel field effect transistors of triple SiGe quantum wells on SOI2006

Author(s)

Journal Title

Data Source

[Journal Article] Buried-channel field effect transistors of triple SiGe quantum wells on SOI.2006

Author(s)

Journal Title

Description

Data Source

[Journal Article] Buried - channel field effect transistors of triple SiGe quantum wells on SOI2006

Author(s)

Journal Title

Description

Data Source

[Journal Article] Electrical investigation of Si/SiGe layers grown on a nanometer-thick SOI by CVD.2005

Author(s)

Journal Title

Description

Data Source

[Journal Article] Electrical investigation of Si/SiGe layers grown on a nanometer - thick SOI by CVD2005

Author(s)

Journal Title

Description

Data Source

[Journal Article] A check system of process machine schedules by mobile agents2004

Author(s)

Journal Title

FUJINAGA Kiyohisa 藤永清久