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FUJINAGA Kiyohisa  藤永 清久

ORCIDConnect your ORCID iD *help
Researcher Number 40285515
Other IDs
External Links
Affiliation (based on the past Project Information) *help 2013: 北海道科学大学, 創生工学部, 教授
2010 – 2012: 北海道工業大学, 創生工学部, 教授
2004 – 2006: 北海道工業大学, 工学部, 教授
1998 – 2000: 北海道工業大学, 工学部, 教授
1997: 北海道工業大学, 工学部・経営工学科, 教授
Review Section/Research Field
Principal Investigator
Electron device/Electronic equipment / 電子デバイス・機器工学
Keywords
Principal Investigator
SOI / MOSFET / 電界効果素子 / SIMOX / SiGe / CVD / 量子井戸 / Hole Mobility / Buried Channel / Quantum Well … More / 移動度 / 正孔 / 転位密度 / 電界効果デバイス / サブスレッショルド特性 / ダブルチャネル / ホール移動度 / 埋め込みチャネル / hole current / transistor / quantum well / germanium / silicon / 電界解効果素子 / ホール電流 / 気相成長法 / トランジスタ / ゲルマニウム / シリコン / 光誘起 / 光誘起電流 / SiGe量子井戸 / シミュレーション / 電子デバイス・機器 / 半導体物性 / 先端機能デバイス / 結晶成長 / 実効移動度 / 正孔電流 / バックゲート / シリコン・ゲルマニウム Less
  • Research Projects

    (3 results)
  • Research Products

    (19 results)
  • Co-Researchers

    (1 People)
  •  Investigation of SiGe/Si hetero interface to provide a device for producing multi-valued signals using light-induced current modulationPrincipal Investigator

    • Principal Investigator
      FUJINAGA Kiyohisa
    • Project Period (FY)
      2010 – 2013
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Hokkaido Institute of Technology
  •  Study on Nanometer SOI Device StructurePrincipal Investigator

    • Principal Investigator
      FUJINAGA Kiyohisa
    • Project Period (FY)
      2004 – 2006
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electron device/Electronic equipment
    • Research Institution
      Hokkaido Institute of Technology
  •  INVESTIGATION ON ELECTRONIC CHARACTERISTICS OF SiGe MULTI-QUANTUM WELL CHANNEL MOSFETs ON A SOI SUBSTRATEPrincipal Investigator

    • Principal Investigator
      FUJINAGA Kiyohisa
    • Project Period (FY)
      1997 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (B).
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      HOKKAIDO INSTITUTE OF TECHNOLOGY

All 2014 2013 2012 2007 2006 2005 2004

All Journal Article Presentation

  • [Journal Article] SIMOX基板の埋め込み酸化膜をゲートに用いたSiGe p-MOSFETの電気特性2014

    • Author(s)
      藤永清久
    • Journal Title

      電子情報通信学会論文誌C

      Volume: J97-C Pages: 246-248

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560339
  • [Journal Article] SIMOX基板の埋め込み酸化膜をゲート酸化膜に用いたSiGe p-MOSFETの電気特性2014

    • Author(s)
      藤永清久
    • Journal Title

      電子情報通信学会論文誌C

      Volume: Vol. J97-C,No. 5 Pages: 246-248

    • URL

      http://search.ieice.org/bin/index.php?category=C&lang=J&curr=1

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560339
  • [Journal Article] Practice of HDL Education Providing Students a Sense of Achievement2014

    • Author(s)
      藤永清久
    • Journal Title

      Journal of JSEE

      Volume: 62 Issue: 1 Pages: 1_72-1_76

    • DOI

      10.4307/jsee.62.1_72

    • NAID

      130003393184

    • ISSN
      1341-2167, 1881-0764
    • Language
      Japanese
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560339
  • [Journal Article] Effective hole mobility in SiGe buried-channel well MOSFETs on SOI by low-pressure CVD2013

    • Author(s)
      K. Fujinaga
    • Journal Title

      ECS. J. Solid State Sci. Technol.

      Volume: Vol. 2, No. 9 Issue: 9 Pages: Q142-Q146

    • DOI

      10.1149/2.007309jss

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22560339
  • [Journal Article] Effective Hole mobilities in the buried channel of multiple SiGe quantum wells grown by ultra-clean low-pressure CVD2007

    • Author(s)
      K.Fujinaga
    • Journal Title

      Semiconductor Technology 2007・1

      Pages: 15-22

    • Data Source
      KAKENHI-PROJECT-16560305
  • [Journal Article] Effective hole mobilities in the buried channel of multiple SiGe quantum wells grown by ultra-clean low-pressure CVD2007

    • Author(s)
      K.Fujinaga
    • Journal Title

      Semiconductor Technology PV2007-03

      Pages: 15-22

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16560305
  • [Journal Article] Buried-channel field effect transistors of triple SiGe quantum wells on SOI2006

    • Author(s)
      K.Fujinaga
    • Journal Title

      SiGe and Ge : Materials, Processing, and Devices 3・7

      Pages: 973-979

    • Data Source
      KAKENHI-PROJECT-16560305
  • [Journal Article] Buried-channel field effect transistors of triple SiGe quantum wells on SOI.2006

    • Author(s)
      K.Fujinaga
    • Journal Title

      SiGe & Ge Materials, Processing, and Devices Vol.3

      Pages: 973-979

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16560305
  • [Journal Article] Buried - channel field effect transistors of triple SiGe quantum wells on SOI2006

    • Author(s)
      K.Fujinaga
    • Journal Title

      SiGe & Ge Materials,Processing,and Devices 13

      Pages: 973-979

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16560305
  • [Journal Article] Electrical investigation of Si/SiGe layers grown on a nanometer-thick SOI by CVD.2005

    • Author(s)
      K.Fujinaga
    • Journal Title

      Electrochemical and Solid-State Lett. Vol.7

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-16560305
  • [Journal Article] Electrical investigation of Si/SiGe layers grown on a nanometer - thick SOI by CVD2005

    • Author(s)
      K.Fujinaga
    • Journal Title

      Electrochemical and Solid-State Lett 7

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-16560305
  • [Journal Article] A check system of process machine schedules by mobile agents2004

    • Author(s)
      K.Fujinaga
    • Journal Title

      Proceedings of 5^<th> APIEMS 2004

      Pages: 1911-1917

    • Data Source
      KAKENHI-PROJECT-16560305
  • [Journal Article] Electrical Investigation of Si/SiGe layers grown on a nanometer-thick SOI by CVD2004

    • Author(s)
      K.Fujinaga
    • Journal Title

      Electrochemical and Solid-State Letters 7

    • Data Source
      KAKENHI-PROJECT-16560305
  • [Journal Article] Hole mobilities in the Si/SiGe grown on nanometer SOI of SIMOX2004

    • Author(s)
      K.Fujinaga
    • Journal Title

      Proceedings of 7^<th> IEEE-ICSICT 2004

      Pages: 2218-2221

    • Data Source
      KAKENHI-PROJECT-16560305
  • [Presentation] エージェント生産システムにおけるハイブリッドスケジューリングに関する研究2013

    • Author(s)
      蔵徹郎,藤永清久
    • Organizer
      電子情報通信学会北海道支部インターネットシンポジウム
    • Data Source
      KAKENHI-PROJECT-22560339
  • [Presentation] ジョブショップスケジューリングにおけるGAと再帰的伝搬法の比較検討2012

    • Author(s)
      蔵徹郎,藤永清久
    • Organizer
      日本経営工学会秋季研究大会
    • Place of Presentation
      大阪工業大学(予稿集,D16)
    • Data Source
      KAKENHI-PROJECT-22560339
  • [Presentation] 機械故障による生産遅延発生時における再スケジューリングの最適化2012

    • Author(s)
      蔵徹郎,藤永清久
    • Organizer
      電子情報通信学会基礎・境界ソサイエティ大会
    • Place of Presentation
      岐阜大学(基礎・境界論文集,A-12-8)
    • Data Source
      KAKENHI-PROJECT-22560339
  • [Presentation] 再帰的伝搬法に基づく自立分散型のマシンスケジューリング2012

    • Author(s)
      蔵徹郎,藤永清久
    • Organizer
      電子情報通信学会北海道支部インターネットシンポジウム
    • Data Source
      KAKENHI-PROJECT-22560339
  • [Presentation] GAと再帰的伝搬法を用いたジョブショップスケジューリング2012

    • Author(s)
      蔵徹郎,藤永清久
    • Organizer
      電気・情報関係学会北海道支部連合大会
    • Place of Presentation
      北海道大学(No. 189)
    • Data Source
      KAKENHI-PROJECT-22560339
  • 1.  渋谷 正弘 (00196453)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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