NONOGAKI Yoichiro 野々垣陽一

Researcher Number	40300719
Other IDs
Affiliation (based on the past Project Information) *help	2004: 分子科学研究所, 極端紫外光科学研究系, 助手 2000 – 2003: 岡崎国立共同研究機構, 分子科学研究所, 助手 1999: NAGOYA UNIVERSITY, DEPARTMENT OF MATERIALS SCIENCE AND ENGINEERING, RESEARCH ASSOCIATE, 工学研究科, 助手 1997 – 1998: OKAZAKI NATIONAL RESERACH INSTITUTES,INSTITUTE FOR MOLECULAR SCIENCE,RESEARCH AS, 分子科学研究所, 助手
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials Except Principal Investigator Electronic materials/Electric materials / Applied materials science/Crystal engineering / 機能・物性・材料
Keywords	Principal Investigator 放射光励起脱離 / Si(111)基板上SiO_2 / Si(001)基板上SiO_2 / STM観察 / Si(III)基板上SiO_2 / 微傾斜Si(III)基板 / アンジュレータ光照射 / 水素吸着Si(111)表面 / 光刺激脱離 / 放射光刺激脱離 / アンジュレータ … More Except Principal Investigator … More 希土類元素 / OMVPE法 / Er / InP / GaInP / III-V族半導体 / 有機金属気相エピタキシャル法 / エルビウム / 共添加 / 半導体 / STM / 局在スピン / 希土類イオン / 蛍光EXAFS法 / X線CTR散乱法 / ジスプロシウム / 2〜3μm帯発光 / Dy / 半導体レーザ / 量子ドット / 局所構造 / 臨界成長温度 / 絶縁体 / 金属 / 複合構造 / 量子機能 / 作製装置 / SEMICONDUCTORS / INSULATORS / METALS / HYBRID STRUCTURES / QUANTUM FUNCTIONS / GROWTH SYSTEM / 表面 / 界面 / 1原子層 / 結晶構造 / ヘテロ成長 / 制御 / SURFACE / INTERFACE / ATOMIC LAYER / CRYSTAL STRUCTURES / HETEROSTRUCTURE GROWTH / GROWTH CONTROL / ランタノイド化合物 / 半金属 / 半導体低次元量子構造 / 原子層制御成長 / 量子効果 / 半金属-半導体転移 / 半金属―半導体転移 / lanthanoide / semimetal / semiconductor structures / atomicallv-controlled growth / quantum effects / semimetal-semiconductor transition / 放射光エッチング / ナノ反応場 / 自已組織化反応 / バイオセンサー / チャンネルタンパク質 / アンジュレータ / 脂質二重膜 / 自己組織化反応 / 放射光 / エッチング / シリコン / 自己組織有機単分子膜 / SAM / 生体膜 / ナノイメージング / 水素 / 自己組織単分子膜 / 自己組織化現象 / 赤外反射吸収分光 / ダイポールダイポールカップリング効果 / Synchrotron radiation etching / nano-reaction field / self-assembling reaction / bio-sensor / channel protein / undulator / lipid bilayer / 光増幅素子 / 超高濃度 / 希上類元素 / Rare-Earth Elements / Co-doping / Semiconductors / Light Amplifier / Ultra-high Doping / 希土類添加III-V族半導体 / 新規半導体レーザ用材料 / 原子レベル制御成長 / 誘導放出 / ダブルヘテロ構造 / ヘテロ界面制御 / rare-earth-doped III-V / semiconductors / materials for new semiconductor lasers / atomically-controlled growth / stimulated emission / erbium / doubleheterostructures / control of heterointerface Less

放射光照射を用いたSiO_2脱離によるSi表面クリーニングおよび表面加工Principal Investigator
- Principal Investigator
  
  野々垣陽一
- Project Period (FY)
  2002 – 2004
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Institute for Molecular Science
  Okazaki National Research Institutes
Fabrication of Semiconductor Light Amplifier using Ultra-High Co-Doping of Er and O
- Principal Investigator
  
  TAKEDA Yoshikazu
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
Materials for new semiconductor lasers; atomically-controlled, growth of rare-earth-doped III-V semiconductors with high quality
- Principal Investigator
  
  FUJIWARA Yasufumi
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Osaka University
  Nagoya University
放射光源を用いた高分解能・低損傷エッチングの開発及び半導体低次元構造作製への応用Principal Investigator
- Principal Investigator
  
  野々垣陽一
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Okazaki National Research Institutes
Fabrication of noble nano-reaction field by synchrotron radiation etching and characterization by STM
- Principal Investigator
  
  URISU Tsuneo
- Project Period (FY)
  2000 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  機能・物性・材料
- Research Institution
  Okazaki National Research Institutes
III-V族化合物半導体における希土類原子配置による局在スピンの制御と物件
- Principal Investigator
  
  藤原康文
- Project Period (FY)
  1999
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  Nagoya University
Atomically-controlled growth and properties of low-dimensional lanthanoide/semiconductor quantum structures
- Principal Investigator
  
  FUJIWARA Yasufumi
- Project Period (FY)
  1999 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
III-V族化合物半導体における希土類原子配置による局在スピンの制御と物性
- Principal Investigator
  
  FUJIWARA Yasufumi
- Project Period (FY)
  1998
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas (A)
- Research Institution
  Nagoya University
室温動作2〜3μm帯半導体レーザ用材料:Dy添加III-V族半導体の作製と発光特性
- Principal Investigator
  
  藤原康文
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Nagoya University
CRYSTAL STRUCTURE ANALYSIS OF SURFACE AND INTERFACE 1 ATOMIC LAYER AND CONTROL OF HETEROSTRUCTURE GROWTH
- Principal Investigator
  
  TAKEDA Yoshikazu
- Project Period (FY)
  1997 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  NAGOYA UNIVERSITY
DEVELOPMENT OF FABRICATION SYSTEM FOR NEW QUANTUM FUNCTIONAL MATERIALS OF SEMICONDUCTOR/INSULATOR/METAL HYBRID STRUCTURES
- Principal Investigator
  
  TAKEDA Yoshikazu
- Project Period (FY)
  1995 – 1997
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  NAGOYA UNIVERSITY

All 2004 Other

All Journal Article

[Journal Article] Design and Performance of Undulator Beamline (BL7U) forin-situ Observation of Synchrotron Radiation Stimulated Etching by STM2004
- Author(s)
  Y.Nonogaki, M.Katoh, et al.
- Journal Title
  
  AIP Proceedings 705
  
  Pages: 368-368
- Data Source
  KAKENHI-PROJECT-14750245
[Journal Article] Construction of the undulator beamline equipped with a UHV-STM for observations of synchrotron-radiation-stimulated surface reaction
- Author(s)
  Y.Nonogaki, M.Katoh, et al.
- Journal Title
  
  Journal of Electron Spectroscopy and RelatedPhenomena (発表予定)
- Data Source
  KAKENHI-PROJECT-14750245

1. FUJIWARA Yasufumi (10181421)

# of Collaborated Projects: 8 results

# of Collaborated Products: 0 results
2. TABUCHI Masao (90222124)

# of Collaborated Projects: 8 results

# of Collaborated Products: 0 results
3. TAKEDA Yoshikazu (20111932)

# of Collaborated Projects: 8 results

# of Collaborated Products: 0 results
4. NAKAMURA Arao (50159068)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. URISU Tsuneo (50249950)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. YOSHIDA Hiroshi (30133929)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. TATSUTA Toshiaki

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. HARADA Jimpei

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. TAKAHEI Ken-ichiro

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 澤井巳喜夫

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. OYANAGI Hiroyuki

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 大柳宏之

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 町田英明

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

NONOGAKI Yoichiro 野々垣 陽一

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放射光照射を用いたSiO_2脱離によるSi表面クリーニングおよび表面加工Principal Investigator

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放射光源を用いた高分解能・低損傷エッチングの開発及び半導体低次元構造作製への応用Principal Investigator

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[Journal Article] Design and Performance of Undulator Beamline (BL7U) forin-situ Observation of Synchrotron Radiation Stimulated Etching by STM2004

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[Journal Article] Construction of the undulator beamline equipped with a UHV-STM for observations of synchrotron-radiation-stimulated surface reaction

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NONOGAKI Yoichiro 野々垣陽一