Kawamoto Kiyoshi 川本清

… Alternative Names

KAWAMOTO Kiyoshi 川本清

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Researcher Number	40302822
Other IDs
Affiliation (Current)	2025: 八戸工業大学, 大学院工学研究科, 教授
Affiliation (based on the past Project Information) *help	2011: 八戸工業大学, 大学院・工学研究科, 准教授 2007: The University of Tokyo, Graduate School of Arts and Sciences, Assistant Professor 2006: 東京大学, 大学院総合文化研究科, 助手 1998 – 2005: 東京大学, 大学院・総合文化研究科, 助手
Review Section/Research Field	Principal Investigator Thin film/Surface and interfacial physical properties / 表面界面物性 Except Principal Investigator Applied materials science/Crystal engineering / Applied materials science/Crystal engineering / Electronic materials/Electric materials / Nuclear fusion studies
Keywords	Principal Investigator 仮想基板 / 基板応力制御 / ヘテロ界面 / 酸化 / 混晶表面 Except Principal Investigator SiGe / SiGe-OI / amplified spontaneous emission / on-off gain / current injection … More / direct-gap / proximity effect / GaSb quantum Dots / group-IV photonics / Si-based semiconductor optical amplifier / SOI導波路 / シリコンテクノロジ / 自由キャリア吸収 / 結晶欠陥 / 誘導放出光 / 電流注入モード / on-off利得 / 増幅された自然放出光 / オンオフ利得 / 電流励起 / ガリウムアンチモン量子ドット / シリコンフォトニクス / 直接遷移化 / シリコンレーザ / シリコン光増幅器 / electro-optic modulator / electroreflectance / transient response / quantum photodetector / MSM photodetecotr / anomalous above-band-gap absorption / oxidized SiGe / SOI / MSM型表面光検出器 / 不均一幅 / 格子欠陥 / シリコンゲルマニウム混晶 / 光電子量子検出器 / 基板分離構造(SOI) / 吸収変調 / 動特性 / 直線性 / 分離基板(SOI) / 近赤外長波長 / 化合物半導体 / 光照射欠陥反応促進効果 / 異常光吸収バンド / 酸化シリコンゲルマニウム / 表面近傍光電子量子検出器 / 分離基盤(SOI) / EO変調器 / エレクトロリフレクタンス / 過渡応答 / 量子検出器 / MSM検出器 / 異常吸収 / 酸化SiGe / SOI構造 / Auger recombination / real space transfer / two level system / infrared radiation / intersubband luminescence / Si heterostructures / light-emitting silicon / 分子線エピタキシー(MBE) / SiGeOI基板分離構造 / 高移動度トランジスタ(HEMT) / 非平衡電子分布 / サブバンド間遷移 / シリコン系半導体 / 電子・光閉じ込め / シリコンチャネル高移動度トランジスタ / 異常反射率 / 遠赤外光発生 / エネルギー緩和 / シリコンベース量子構造 / Auger / 実空間トランスファ / 2準位系 / 遠赤外光 / サブバンド間発光 / Siヘテロ構造 / シリコンの発光機構 / Near-surface optical absorption band / Ge content ceiling in SiGe-OI / SiOィイD22ィエD2 quantum structures / SiGe virtual substrate / SiOィイD22ィエD2 heterostructures / Epitaxial Si / Hybrid epitaxy / 高密度励起子 / SiGe混晶ベース量子構造 / 電子・光の閉じ込め / エピSi / 非晶質シリコン酸化物障壁 / ワイドギャップ・低誘電率 / 半導体ヘテロ構造 / 表面光吸収バンド / Ge組成上限 / SiO_2量子構造 / 低速イオン注入複合分子線エピタキシ法 / SiGe仮想基板層 / SiO_2拡張構造 / エピ性Si / 界面強度 / 被覆接合 / 第一壁 / タングステン Less

Development of ultra-fine-grain tungsten coating on the first wall by electron beam irradiation processing
- Principal Investigator
  
  SATOU Manabu
- Project Period (FY)
  2011
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Nuclear fusion studies
- Research Institution
  Hachinohe Institute of Technology
A Si-based Semiconductor Optical Amplifier Afforded by High-brightness Quantum Dots Embedded in Silicon
- Principal Investigator
  
  FUKATSU Susumu
- Project Period (FY)
  2005 – 2007
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
表面応力制御基板とエピタキシーPrincipal Investigator
- Principal Investigator
  
  川本清
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  The University of Tokyo
SiGe混晶表面の初期酸化過程のその場観察Principal Investigator
- Principal Investigator
  
  川本清
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Encouragement of Young Scientists (A)
- Research Field
  
  表面界面物性
- Research Institution
  The University of Tokyo
Real space transfer of electrons in a Si-based quantum structure and its application to infrared generation
- Principal Investigator
  
  FUKATSU Susumu
- Project Period (FY)
  2000 – 2001
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
Development of a "near-surface"-photodetector based on anomalous above-band-gap absorption band of SiGe
- Principal Investigator
  
  FUKATSU Susumu
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
Fabrication of Si/SiOィイD22ィエD2-based crystalline heterostructures by using low-energy oxygen implantation during Si molecular beam epitaxy
- Principal Investigator
  
  FUKATSU Susumu
- Project Period (FY)
  1998 – 1999
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo

All 2009 2008 2007 2005 2002 2000

All Journal Article Presentation

[Journal Article] Amplified spontaneous emission from GaSb quantum dots in Si grown by MBE2007
- Author(s)
  N.Yasuhara, M.Jo, Y.Sugawara, K.Kawamoto, S.Fukatsu
- Journal Title
  
  J.Cyst.Growth 301-302
  
  Pages: 718-721
- Description
  「研究成果報告書概要(和文)」より
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17360007
[Journal Article] Amplified spontaneous emission from GaSb quantum dots in Si grown by MBE(There are 9 peer-reviewed papers not listed here)2007
- Author(s)
  N.Yasuhara, M.Jo, Y.Sugawara, K.Kawamoto, S.Fukatsu
- Journal Title
  
  J.Cyst.Growth 301-302
  
  Pages: 718-721
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360007
[Journal Article] A Si-based quantum-dot light emitting diode2005
- Author(s)
  M.Jo, K.Ishida, N.Yasuhara, Y.Sugawara, K.Kawamoto, S.Fukatsu
- Journal Title
  
  Appl.Phys.Lett. 86
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360007
[Journal Article] Near-infrared gain in GaSb quantum dots in Si grown by MBE2005
- Author(s)
  M.Jo, N.Yasuhara, Y.Sugawara, K.Kawamoto, S.Fukatsu
- Journal Title
  
  J.Cryst.Growth 278
  
  Pages: 142-145
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360007
[Journal Article] Laser-Induced Photoluminescence Enhancement in a Room-Temperature Emitting SiGe Based Alloy Quantum Well2002
- Author(s)
  D.Hippo, Y.Sugawara, Y.Kishimoto, K.Kawamoto, S.Fukatsu
- Journal Title
  
  Jpn.J.Appl.Phys. 41, 12B
- NAID
  110004080971
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-12555085
[Journal Article] Laser-Induced Photoluminescence Enhancement in a Room-Temperature Emitting SiGe Based Alloy Quantum Well2002
- Author(s)
  D.Hippo, Y.Sugawara, Y.Kishimoto, K.Kawamoto, S.Fukatsu
- Journal Title
  
  Jpn.J.Appl.Phys. 41, 12B
- NAID
  110004080971
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-12450005
[Journal Article] Anomalous surface absorption band at 1.2eV in Si_<1-x>Ge_x alloy-based structures2000
- Author(s)
  Y.Kishimoto, K.Kawamoto, S.Fukatsu
- Journal Title
  
  Thin Solid Films 369
  
  Pages: 423-425
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-12555085
[Presentation] Siの転位起源D4蛍光と900meV,D12光利得蛍光の強い相関と電子状態間結合2009
- Author(s)
  田名網宣成, 五十嵐潤, 安武裕輔, 川本清
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大,つくば
- Year and Date
  2009-04-02
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360007
[Presentation] 歪緩和GaSb-Si III-V-in-Si量子ドットにおけるサブギャップ遅延蛍光2008
- Author(s)
  寺田陽祐, 川本清, 深津晋
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日大理工,船橋
- Year and Date
  2008-03-28
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360007
[Presentation] シリコンの転位起源D12蛍光線の光利得2008
- Author(s)
  五十嵐潤, 川本清, 深津晋
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学,春日井
- Year and Date
  2008-09-04
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360007
[Presentation] GaSb量子ドットを埋め込んだSiGeからの900-meV蛍光線の光利得2008
- Author(s)
  川本清, 深津晋
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日大理工,船橋
- Year and Date
  2008-03-28
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360007
[Presentation] Group-III-V-in-Si as opposed to III-V-on-Si as an alternative route to light harvesting in Si2008
- Author(s)
  K.Kawamoto, S.Fukatsu
- Organizer
  Materials Research Society 2008 Spring Meeting
- Place of Presentation
  San Francisco, USA
- Year and Date
  2008-03-24
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360007
[Presentation] Optical Gain of Dislocation-related D12 Emission Line in Si2008
- Author(s)
  N.Tana-ami, K.Kawamoto, S.Fukatsu
- Organizer
  Materials Research Society 2008 Fall Meeting
- Place of Presentation
  Boston, USA
- Year and Date
  2008-12-03
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360007
[Presentation] Type-II Sil-xGex/Si(001)歪量子井戸における実空間電子移動と寿命伸展2007
- Author(s)
  寺田陽祐, 安原望, 中島法子, 川本清, 深津晋
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学,札幌
- Year and Date
  2007-09-06
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360007
[Presentation] 近表面酸化SiGeベースMSM近赤外光検出器/変調器の時間応答2007
- Author(s)
  五十嵐潤, 川本清, 深津晋
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学,札幌
- Year and Date
  2007-09-06
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360007
[Presentation] マルチモードSOI導波路を利用した誘導パラメトリック過程の位相整合条件の緩和2007
- Author(s)
  安田和史, 田名網宣成, 安原望, 菅原由隆, 川本清, 深津晋
- Organizer
  第54回応用物理学関係連合講演会
- Place of Presentation
  青山学院大,相模原
- Year and Date
  2007-03-28
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360007
[Presentation] Origin of quantum confinement of electrons-hole pairs at the type-II heterointerface of GaSb-Si quantum dot2005
- Author(s)
  M.Jo, N.Yasuhara, Y.Sugawara, K.Kawamoto, S.Fukatsu
- Organizer
  8^th International Conference on Atomically Controlled Surfaces and Interfaces(ACSIN8)
- Place of Presentation
  Stockholm
- Year and Date
  2005-07-22
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360007
[Presentation] Origin of quantum confinement of electrons-hole pairs at the type-II heterointerface of GaSb-Si quantum dot2005
- Author(s)
  M.Jo, N.Yasuhara, Y.Sugawara, K.Kawamoto, S.Fukatsu
- Organizer
  8th International Conference on Atomically Controlled Surfaces and Interfaces(ACSIN-8)(Session Misc P.418)
- Place of Presentation
  Stockholm
- Year and Date
  2005-06-22
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360007
[Presentation] GaSb Quantum Dot Growth on Si(001) Covered with Sub-Monolayer Sb as Studied by Atomic Force2005
- Author(s)
  K.Kawamoto, M.Jo, Y.Sugawara, S.Fukatsu
- Organizer
  Microcopy, International Conference on Silicon Epitaxy and Heterostructures(ICSI4)
- Place of Presentation
  Awajishima, Hyogo
- Year and Date
  2005-05-23
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360007
[Presentation] A RooM-TEMPERATURE OPERATING si-BASED QUANTUM-DOT LED2005
- Author(s)
  M.Jo, N.Yasuhara, Y.Sugawara, K.Kawamoto, S.Fukatsu
- Organizer
  European Materials Research Society 2005 Spring Meeting Meeting
- Place of Presentation
  Strasbourg, France
- Year and Date
  2005-05-31
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360007
[Presentation] DEMONSTRATION OF AN ELECTRICALLY PUMPED SI-BASED QUANTUM DOT OPTICAL AMPLIFIER2005
- Author(s)
  S.Fukatsu, M.Jo, N.Yasuhara, Y.Sugawara, K.Kawamoto
- Organizer
  European Materials Research Society 2005 Spring Meeting
- Place of Presentation
  Strasbourg, France
- Year and Date
  2005-06-03
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360007
[Presentation] Room-temperature operation of a Si-based LED with strained-GaSb quantum- dot-embedded-silicon in the active region2005
- Author(s)
  M.Jo, N.Yasuhara, Y.Sugawara, K.Kawamoto, S.Fukatsu
- Organizer
  International Conference on Silicon Epitaxy and Heterostructures(ICSI-4)
- Place of Presentation
  Awajishima, Hyogo
- Year and Date
  2005-05-23
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360007
[Presentation] Electromodulation of the 1.2-eV near-surface absorption band in SiGe alloys2000
- Author(s)
  Y.Kishimoto, K.Kawamoto, S.Fukatsu
- Organizer
  61st Fall Meeing
- Place of Presentation
  Hokkaido Inst.Technol.
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-12555085

1. FUKATSU Susumu (60199164)

# of Collaborated Projects: 4 results

# of Collaborated Products: 22 results
2. TANI Yukara

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
3. SATOU Manabu (40226006)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. ABE Katsunori (70005940)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. KOHIRUIMAKI Takayuki (70215375)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. SAKOI Yuki (30453294)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. SHIMAWAKI Hidetaka (80241587)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. SHINYAMA Katsuyoshi (00326638)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Kawamoto Kiyoshi 川本 清

KAWAMOTO Kiyoshi 川本 清

Research Projects

Research Products

Co-Researchers

Development of ultra-fine-grain tungsten coating on the first wall by electron beam irradiation processing

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

A Si-based Semiconductor Optical Amplifier Afforded by High-brightness Quantum Dots Embedded in Silicon

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

表面応力制御基板とエピタキシーPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

SiGe混晶表面の初期酸化過程のその場観察Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Real space transfer of electrons in a Si-based quantum structure and its application to infrared generation

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of a "near-surface"-photodetector based on anomalous above-band-gap absorption band of SiGe

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Fabrication of Si/SiOィイD22ィエD2-based crystalline heterostructures by using low-energy oxygen implantation during Si molecular beam epitaxy

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Amplified spontaneous emission from GaSb quantum dots in Si grown by MBE2007

Author(s)

Journal Title

Description

Data Source

[Journal Article] Amplified spontaneous emission from GaSb quantum dots in Si grown by MBE(There are 9 peer-reviewed papers not listed here)2007

Author(s)

Journal Title

Description

Data Source

[Journal Article] A Si-based quantum-dot light emitting diode2005

Author(s)

Journal Title

Description

Data Source

[Journal Article] Near-infrared gain in GaSb quantum dots in Si grown by MBE2005

Author(s)

Journal Title

Description

Data Source

[Journal Article] Laser-Induced Photoluminescence Enhancement in a Room-Temperature Emitting SiGe Based Alloy Quantum Well2002

Author(s)

Journal Title

NAID

Description

Data Source

[Journal Article] Laser-Induced Photoluminescence Enhancement in a Room-Temperature Emitting SiGe Based Alloy Quantum Well2002

Author(s)

Journal Title

NAID

Description

Data Source

[Journal Article] Anomalous surface absorption band at 1.2eV in Si_<1-x>Ge_x alloy-based structures2000

Kawamoto Kiyoshi 川本清

KAWAMOTO Kiyoshi 川本清