IWAI Hiroshi 岩井洋

Researcher Number	40313358
Affiliation (based on the past Project Information) *help	2010 – 2011: 東京工業大学, フロンティア研究機構, 教授 2007 – 2009: Tokyo Institute of Technology, フロンティア研究センター, 教授 2005 – 2006: 東京工業大学, フロンティア創造共同研究センター, 教授 2004 – 2005: 東京工業大学, フロンテイア創造共同研究センター, 教授 2004: 国立大学法人東京工業大学, フロンティア創造共同研究センター, 教授 2002 – 2003: 東京工業大学, フロンティア創造共同研究センター, 教授 2000 – 2001: 東京工業大学, 大学院・総合理工学研究科, 教授
Review Section/Research Field	Principal Investigator Science and Engineering / Thin film/Surface and interfacial physical properties Except Principal Investigator Thin film/Surface and interfacial physical properties / Science and Engineering
Keywords	Principal Investigator CMOS / 表面・界面物性 / 固定電荷 / 価数変化 / シリケート / 界面ダイポール / 半導体 / 高誘電体薄膜 / Niシリサイド / 短チャネル効果 … More / エネルギー障壁 / drain / Schottky source / しきい値 / 三次元構造MOSFET / 数値解析 / ショットキー接合 / 3次元 / MOSFET / オン電流 / ショットキー / 特性ばらつき / ロバストネス / 3次元構造 / トランジスタ / 感度解析 / シリサイド / FinFET / ダブルゲート / ゆらぎ / ばらつき / 吸湿性 / 低温長時間アニール / Chemical Oxide / 極浅接合 / ガスドーピング / SiO_2換算膜厚 / リーク電流 / レーザーアニール / 拡散層 / プラズマドーピング / ゲート絶縁膜 / 高誘電率 / MBE / LSI … More Except Principal Investigator Dielectric constant / Maximum entropy concept / Rare oxide film / High dielectric constant film / gate insulators / Angle-resolved photoelectron spectroscopy / photoelectron spectroscopy / Synchrotron radiation / 硬X線 / シリコン界面 / 高エネルギー光電子分光法 / 希土類金属酸化膜 / 電子帯構造 / 誘電率 / 最大エントロピー法 / 希土類酸化膜 / 高誘電率膜 / ゲート絶縁膜 / 角度分解光電子分光法 / 光電子分光法 / 放射光 / 異種材料 / 半導体プロセス / チップ搭載チップ / 異分野融合 / モバイル端末 / ヒューマン・インターフェース・デバイス / 超高速・低消費 / 超機能グローバル / 多機能化 / ヘルスケアチップ / 半導体 / インターフェース / 微細加工 / システム / 超機能化 / シリコン / 集積回路 / インテグレーション Less

Comprehensive Observation of Interface dipoles at Insulator Semiconductor InterfacePrincipal Investigator
- Principal Investigator
  
  IWAI Hiroshi
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Tokyo Institute of Technology
Robustness of Three-Dimensional MOSFETsPrincipal Investigator
- Principal Investigator
  
  IWAI Hiroshi
- Project Period (FY)
  2006 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Tokyo Institute of Technology
Development of High Energy Photoelectron Spectroscopy and Its Application to Analyses of Chemical States at High-κ dielectric/Silicon Interface
- Principal Investigator
  
  HATTORI Takeo
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Musashi Institute of Technology
グローバル・デバイス・インテグレーション技術の創製Principal Investigator
- Principal Investigator
  
  岩井洋
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Tokyo Institute of Technology
超機能化グローバル・インターフェース・インテグレーション研究
- Principal Investigator
  
  堀池靖浩
- Project Period (FY)
  2000 – 2004
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  National Institute for Materials Science
  The University of Tokyo

All 2012 2011 2010 2009 2008 2007 2005 2004 2003

All Journal Article Presentation

[Journal Article] Properties of CeOx/La2O3 gate dielectric and its effects on the MOS transistor characteristics2012
- Author(s)
  H.Wong, B.L.Yang, K.Kakushima, P.Ahmet, H.Iwai
- Journal Title
  
  Vacuum
  
  Volume: 86 Pages: 990-993
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] CovalentNature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal2012
- Author(s)
  T. Kawanago, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai
- Journal Title
  
  IEEEElectron Dev. Lett
  
  Volume: Vol.33 Pages: 423-425
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Valence number transition and silicate formation of cerium oxide films onSi(100)2012
- Author(s)
  M. Mamatrishat, M. Kouda, K. Kakushima, H. Nohira, P. Ahmet, Y. Kataoka, A. Nishiiyama, K. Tsutsui, N. Sugii, K. Natori, T. Hattori, H. Iwai
- Journal Title
  
  Vacuum
  
  Volume: Vol.86 Pages: 1513-1516
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Covalent Nature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal2012
- Author(s)
  T.Kawanago, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 33 Issue: 3 Pages: 423-425
- DOI
  10.1109/led.2011.2178111
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature2012
- Author(s)
  T.Kawanago, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 59 Issue: 2 Pages: 269-276
- DOI
  10.1109/ted.2011.2174442
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Properties of CeO_x/La_2O_3 gate dielectric and its effects on the MOS transistor characteristics2012
- Author(s)
  H. Wong, B. L. Yang, K. Kakushima, P. Ahmet, H. Iwai
- Journal Title
  
  Vacuum
  
  Volume: Vol.86 Pages: 990-993
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Valence number transition and silicate formation of cerium oxide films on Si(100)2012
- Author(s)
  M. Mamatrishat
- Journal Title
  
  Vacuum
  
  Volume: 86(10) Issue: 10 Pages: 1513-1516
- DOI
  10.1016/j.vacuum.2012.02.050
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246003, KAKENHI-PROJECT-21246008
[Journal Article] EOT of 0. 62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature2012
- Author(s)
  T. Kawanago, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai
- Journal Title
  
  IEEE Trans. Electron Devices
  
  Volume: Vol.59 Pages: 269-276
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Rareearth oxide capping effect on La_2O_3 gatedielectrics for equivalent oxidethickness scaling toward 0. 5 nm2011
- Author(s)
  M. Kouda, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: Vol.50
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process2011
- Author(s)
  T. Kawanago, Y. Lee, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai
- Journal Title
  
  Solid-StateElectron
  
  Volume: Vol.68 Pages: 68-72
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Rare earth oxide capping effect on La2O3 gate dielectrics for equivalent oxide thickness scaling toward 0.5 nm2011
- Author(s)
  M.Kouda, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Journal Title
  
  Japanese Journal of Applied Physcis
  
  Volume: 50
- NAID
  210000071407
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Interface and electrical properties of Tm2O3 gate dielectrics for gate oxide scaling in MOS devices2011
- Author(s)
  M.Kouda, T.Kawanago, P.Ahmet, K.Natori,T.Hattori, H.Iwai, K.Kakushima, A.Nishiyama, N.Sugii, K.Tsutsui
- Journal Title
  
  Journal of Vacuum Science & Technology
  
  Volume: 29 Issue: 6 Pages: 62202-62202
- DOI
  10.1116/1.3660800
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process2011
- Author(s)
  T.Kawanago, Y.Lee, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Journal Title
  
  Solid-State Electronics
  
  Volume: 68 Pages: 68-72
- DOI
  10.1016/j.sse.2011.10.006
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Interface and electrical properties of Tm_2O_3 gate dielectrics for gate oxide scaling in MOS devices2011
- Author(s)
  M. Kouda, T. Kawanago, P. Ahmet, K. Natori, T. Hattori, H. Iwai, K. Kakushima, A. Nishiyama, N. Sugii, K. Tsutsui
- Journal Title
  
  J. Vac. Sci. Technol. B
  
  Volume: Vol.29 Pages: 62202-62202
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Analysis of Threshold Voltage Variation in Fin Field Effect Transistors : Separation of Short Channel Effects2010
- Author(s)
  Y.Kobayashi, K.Tsutsui, K.Kakushima, P.Ahmet, V.P.Rao, H.Iwai
- Journal Title
  
  Japanese Journal of Applied Physics 49(掲載決定)
- NAID
  40017085077
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Analysis of Dependence of Short-channel Effects in Double-gate MOSFETs on Channel Thickness2010
- Author(s)
  Y. Kobayasih, K. Kakushima, P. Ahmet, V.R. Rao, K. Tsutsui, H. Iwai
- Journal Title
  
  Microelectronics Reliability Vol.50
  
  Pages: 332-337
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Characterization of flatband voltage roll-off and roll-up behavior in La_2O_3/silicat gate dielectric2010
- Author(s)
  K. Kakushima, T. Koyanagi, K. Tachi, J. Song, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai
- Journal Title
  
  Solid-State Electron
  
  Volume: Vol54 Pages: 720-723
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Analysis of Dependence of Short-channel Effects in Double-gate MOSFETs on Channel Thickness2010
- Author(s)
  Y.Kobayashi, K.Kakushima, P.Ahmet, V.R.Rao, K.Tsutui, H.Iwai
- Journal Title
  
  Microelectronics Reliability 50
  
  Pages: 332-337
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Electrical Characteristics of Rare Earth(La, Ce, Pr and Tm) Oxides/Silicates Gate Dielectric2010
- Author(s)
  K. Matano, K. Funamizu, M. Kouda, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, K. Natori, T. Hattori, H. Iwai
- Journal Title
  
  ECSTrans
  
  Volume: Vol.27 Pages: 1120-1134
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Analysis of Threshold Voltage Variation in Fin Field Effect Transistors: Separation of Short Channel Effects2010
- Author(s)
  Y. Koyabashi, K. Tsutsui, K. Kakushima, P. Ahmet, V.R. Rao, H. Iwai
- Journal Title
  
  Jpn. J. Appl. Phys Vol.49
  
  Pages: 44201-44201
- NAID
  40017085077
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs2009
- Author(s)
  K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. Ch, orkar, T. Hattori, H. Iwai
- Journal Title
  
  ECS Trans Vol.16
  
  Pages: 29-34
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs2009
- Author(s)
  K.Noguchi, W.Hosoda, K.Matano, K.Kakushima, P.Ahmet, K.Tsutsui, N.Sugii, A.N.Chandorkar, T.Hattori, H.Iwai
- Journal Title
  
  ECS Transactions 16
  
  Pages: 29-34
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Crystallographic Orientation Dependent Electrical Characteristics of La_2O_3 MOS Capacitors2009
- Author(s)
  H. Nakayama, K. Kakushima, P. Ahmet, E. Ikenaga, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai
- Journal Title
  
  ECS Trans
  
  Volume: Vol.25 Pages: 339-345
- Data Source
  KAKENHI-PROJECT-21246008
[Journal Article] Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi_22008
- Author(s)
  Kazuo Tsutsui, Ruifei Xiang, Koji Nagahiro, Takashi Shiozawa, Parhat Ahmet, Yasutoshi Okuno, Michikazu Matsumoto, Masafumi Kubota, Kuniyuki Kakushima, Hiroshi Iwai
- Journal Title
  
  Microelectronic Engineering 85
  
  Pages: 315-319
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Thermal Stability of Ni-silicide Films on Heavily Doped n^+ and P^+ Si Substrates2008
- Author(s)
  Parhat Ahmet, Takashi Shiozawa, Koji Nagahiro, Takahiro Nagata, Kuniyuki Kakushima, Kazuo Tsutsui, Toyohiro Chikyow and Hiroshi Iwai
- Journal Title
  
  Microelectronic Engineering in press
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Thermal Stability of Ni silicide Films on Heavily Doped n+ and p+ Si Substrates2008
- Author(s)
  P. Ahmet, T. Shiozawa, K. Nagahiro, T. Nagata, K. Kakushima, K. Tsutsui, T. Chikyo, H. Iwai
- Journal Title
  
  Microelectronic Engineering Vol.85
  
  Pages: 1642-1645
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic effects in multi-gate MOSFETs2007
- Author(s)
  Yusuke Kobayashi, C. Raghunathan Manoj, Kazuo Tsutsui, Venkanarayan Hariharan, Kuniyuki Kakushima, V. Ramgopal Rao, Parhat Ahmet, and Hiroshi Iwai
- Journal Title
  
  IEICE Transactions E90-C
  
  Pages: 2051-2056
- NAID
  110007541196
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic Effects Depending on Shape of Spacer Region on FinFETs2007
- Author(s)
  Y. Kobayashi, K. Tsutsui, K. Kakushima, V. Hariharan, V. R. Rao, P. Ahmet, and H. Iwai
- Journal Title
  
  ECS Transaction Vol. 6, No. 4
  
  Pages: 83-88
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic effects in multi-gate MOSFETs2007
- Author(s)
  Yusuke Kobayashi, C. Raghunathan Manoj, Kazuo Tsutsui, Venkanarayan Hariharan, Kuniyuki Kakushima, V. Ramgopal Rao, Parhat Ahmet, and Hiroshi Iwai
- Journal Title
  
  IEICE Transactions vol. E90-C, No.10
  
  Pages: 2051-2056
- NAID
  110007541196
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic Effects Depending on Shape of Spacer Region on FinFETs2007
- Author(s)
  Y. Kobayashi, K. Tsutsui, K. Kakushima, V. Hariharan, V. R. Rao, P. Ahmet, H. Iwai
- Journal Title
  
  ECS Transaction 6
  
  Pages: 83-88
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Improvement of Thermal Stability of Ni Silcide by Additive Metals with Specific Introduction Processes2007
- Author(s)
  K. Tsutsui, K. Nagahiro, T. Shiozawa, P. Ahmet, K. Kakushima and H. Iwai
- Journal Title
  
  ECS Transaction 11
  
  Pages: 207-213
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic Effects Depending on Shape of Spacer Region on FinFETs2007
- Author(s)
  Y.Kobahashi, K.Tsutsui, K.Kakushima, V.Hariharan, V.R.Rao, P.Ahmet, H.Iwai
- Journal Title
  
  SOI Device Technology 13 (ECS Transaction-Chicago) 3(出版予定)(掲載決定)
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic Effects in Multi-gate MOSFETs2007
- Author(s)
  Y.Kobayashi, C.R.Manoj, K.Tsutsui, V.Hariharan, K.Kakushima, V.R.Rao, P.Ahmet, H.Iwai
- Journal Title
  
  IEICE Transactions on Electronics (出版予定)(掲載決定)
- NAID
  110007541196
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Parasitic Effects in Multi-gate MOSFETs2007
- Author(s)
  Y. Kobayashi, V.R. Manoj, K. Tsutsui, V. Hariharan, K. Kakushima, V.R. Rao, P. Ahmet, H. Iwai
- Journal Title
  
  IEICE Trans. on Electronics Vol.E90-C
  
  Pages: 2051-2056
- NAID
  110007541196
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18063009
[Journal Article] Thermal Stability of LaO_x/Si Interfacial Transition Layer2005
- Author(s)
  H.Nohira, T.Yoshida, H.Okamoto, Ng Jin Aun, Y.Kobayashi, S.Ohmi, H.Iwai, E.Ikenaga, K.Kobayashi, Y.Takata, T.Hattori
- Journal Title
  
  ECS Transactions 1
  
  Pages: 87-95
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Composition, chemical structure, and electronic band structure of rare earth oxide/Si(100) interfacial transition layer2004
- Author(s)
  T.Hattori, T.Yoshida, T.Shiraishi, K.Takahashi, H.Nohira, S.Joumori, K.Nakajima, M.Suzuki, K.Kimura, I.Kashiwagi, C.Ohshima, S.Ohmi, H.Iwai
- Journal Title
  
  Microelectronic Engineering 72
  
  Pages: 283-287
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Electrical Characteristics for Lu_2O_3 Thin Films Fabricated by E-beam Deposition Method2004
- Author(s)
  S.Ohmi, M.Takeda, H.Ishiwara, H.Iwai
- Journal Title
  
  Journal of The Electrochemical Society 151
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La_2O_3/Si(100) interfacial transition layer2004
- Author(s)
  H.Nohira, T.Shiraishi, K.Takahashi, I.Kashiwagi, C.Ohshima, S.Ohmi, H.Iwai, S.Joumori, K.Nakajima, M.Suzuki, K.Kimura, T.Hattori
- Journal Title
  
  Applied Surface Science 234
  
  Pages: 493-496
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Chemical and electronic structures of Lu_2O_3/Si interfacial transition layer2003
- Author(s)
  H.Nohira, T.Shiraishi, T.Nakamura, K.Takahashi, M.Takeda, S.Ohmi, H.Iwai, et al.
- Journal Title
  
  Applied Surface Science 216
  
  Pages: 234-238
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Effect of surface treatment of Si substrates and annealing condition on high・k rare earth oxide gate dielectrics2003
- Author(s)
  C.Ohshima, J.Taguchi, I.Kashiwagi, H.Yamamoto, S.Ohmi, H.Iwai
- Journal Title
  
  Applied Surface Science 216
  
  Pages: 302-306
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Effect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics2003
- Author(s)
  C.Ohshima, J.Taguchi, I.Kashiwagi, H.Yamamoto, S.Ohmi, H.Iwai
- Journal Title
  
  Applied Surface Science 216
  
  Pages: 302-306
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Chemical and electronic structures of Lu2O3/Si interfacial transition layer2003
- Author(s)
  H.Nohira, T.Shiraishi, T.Nakamura, K.Takahashi, M.Takeda, S.Ohmi, H.Iwai, T.Hattori
- Journal Title
  
  Applied Surface Science 216
  
  Pages: 234-238
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Journal Article] Characterization of La_2O_3 and Yb_2O_3 Thin Films for High-k Gate Insulator Application2003
- Author(s)
  S.Ohmi, C.Kobayashi, I.Kashiwagi, C.Ohshima, H.Ishiwara, H.Iwai
- Journal Title
  
  Journal of The Electrochemical Society 150
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-15206006
[Presentation] 酸化膜中のSiナノワイヤにおけるNi拡散の制御2010
- Author(s)
  茂森直登, 新井英明, 佐藤創志, 角嶋クニユキ, アヘメトパールハット, 西山彰, 筒井一生, 杉井信之, 名取研二, 服部健雄, 岩井洋
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  平塚市
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Fabrication of SB-MOSFETs on SOI Substrate Using Ni Silicide Containing Er Interlayer2010
- Author(s)
  W.Hosoda, K.Ozawa, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Organizer
  China Semiconductor Technology International Conference(CSTIC)
- Place of Presentation
  上海、中国
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Er Inserted Ni Silicide Metal Source/Drain for Schottky MOSFETs2010
- Author(s)
  P. Ahmet, W. Hosoda, K. Noguchi, Y. Ohishi, K. Kakushima, K. Tsutsui, H. Iwai
- Organizer
  10th Int. Workshop on Junction Technology (IWJT2010)
- Place of Presentation
  Shanghai, China
- Year and Date
  2010-05-11
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] A Study of Schottky Barrier Height Modulation of NiSi by Interlayer In sertion and Its Application to SOI SB-MOSFETs2009
- Author(s)
  W.Hosoda, K.Ozawa, K.Kakushima, P.Ahmet, K.Tsutsui, A.Nishiyama, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Organizer
  G-COE PICE International Symposium on Silicon Nano Devices
- Place of Presentation
  Tokyo Institute of Technology, Japan
- Year and Date
  2009-10-13
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] 異種金属界面挿入によるNiシリサイドのショットキー障壁変調とSB一MOSFETへの応用2009
- Author(s)
  細田亘, 野口浩平, 角嶋邦之, パールハット・アヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  2009春季第56回応用物理学会学術講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] 異種金属界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用II2009
- Author(s)
  小澤健児, 細田亘, 角嶋邦之, アヘメトパールハット, 筒井一生, 西山彰, 杉井信之, 服部健雄, 名取研二, 岩井洋
- Organizer
  第70回応用物理学学術講演会
- Place of Presentation
  富山市
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Short-channel effects on FinFETs induced by inappropriate fin widths2009
- Author(s)
  Y.Kobayashi, K.Kakushima, P.Ahmet, V.Ramgopal Rao, K.Tsutsui, H.Iwai
- Organizer
  G-COE PICE International Symposium on Silicon Nano Devices
- Place of Presentation
  Tokyo Institute of Technology, Japan
- Year and Date
  2009-10-13
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] FinFETの構造ばらつきによるオン電流のばらつきの検討2009
- Author(s)
  小林勇介、角嶋邦之、パールハット・アヘメト、ラオ・ラムゴパル、筒井一生、岩井洋
- Organizer
  2009春季第56回応用物理学会学術講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-30
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Annealing Reaction for Ni Silicidation of Si Nanowire2009
- Author(s)
  H.Arai, H.Kamimura, S.Sato, K.Kakushima, P.Ahmet, K.Tsutsui, N.Sugii, K.Natori, T.Hattori, H.Iwai
- Organizer
  216^<th> Electrochemical Society Meeting
- Place of Presentation
  Vienna, Austria
- Year and Date
  2009-10-09
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] 2stepアニールを用いた酸化膜中のSiナノワイヤへのNiシリサイド化2009
- Author(s)
  茂森直登, 新井英朗, 佐藤創志, 角嶋邦之, アヘメトパールハット, 西山彰, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  第70回応用物理学学術講演会
- Place of Presentation
  富山市
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Hf層界面挿入によるNiシリサイドのショットキー障壁変調技術2008
- Author(s)
  又野克哉, 野口浩平, 角嶋邦之, パールハット・アヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  2008秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] FinFETの閾値変動における短チャネル効果による影響の切り分け2008
- Author(s)
  小林勇介、角嶋邦之、パールハット・アヘメト、ラオ・ラムゴパル、筒井一生、岩井洋
- Organizer
  2008秋季第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Analysis of threshold voltage variations of FinFETs : Separation of short channel effects and space charge effects2008
- Author(s)
  Yusuke Kobayashi, Kazuo Tsutsui, Kuniyuki Kakushima, Parhat Ahmet, V. Ramgopal Rao and Hiroshi Iwai
- Organizer
  Int. Conf. on Solid State Devices and Materials
- Place of Presentation
  Tsukuba, Japan
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] FinFETにおけるショートチャネル効果のフィン幅依存性2008
- Author(s)
  小林勇介, 角嶋邦之, パールハットアヘメト, ラムゴパルラオ, 筒井一生, 岩井洋
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学船橋キャンパス
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Analysis of Threshold Voltage Variations of FinFETs: Separation of Short Channel Effects and Space Charge Effects2008
- Author(s)
  Y. Kobayashi, K. Tsutsui, K. Kakushima, V.R. Rao, P. Ahmet, H. Iwai
- Organizer
  Int. Conf. on Solid State Devices and Materials (SSDM 2008)
- Place of Presentation
  Ibaraki, Japan
- Year and Date
  2008-09-25
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs2008
- Author(s)
  K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A.N. Chandorkar, T. Hattori, H. Iwai
- Organizer
  214th Electrochem. Society (ECS) Meeting (PRiME 2008)
- Place of Presentation
  Honolulu, USA
- Year and Date
  2008-10-14
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-M OSFETs2008
- Author(s)
  K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsu i, N. Sugii, A. N. Chandorkar, T. Hattori, and H. Iwai
- Organizer
  Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-M OSFETs
- Place of Presentation
  Honolulu, USA
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects2008
- Author(s)
  Y. Kobayashi, A.B. Sachid, K. Tsutsui, K. Kakushima, P. Ahmet, V.R. Rao, H. Iwai
- Organizer
  214th Electrochem. Society (ECS) Meeting (PRiME 2008)
- Place of Presentation
  Honolulu, USA
- Year and Date
  2008-10-14
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Er層界面挿入によるNiシリサイドのショットキー障壁変調とSB-MOSFETへの応用2008
- Author(s)
  細田亘, 野口浩平, 角嶋邦之, パールハット・アヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部大学
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] 高濃度n^+-Si及びp^+-Si基板上のNiシリサイドの熱安定性の違い2008
- Author(s)
  アヘメトパールハット, 角嶋邦之, 長田貴弘, 筒井一生, 杉井信之, 知京豊裕, 服部健雄, 岩井洋
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学船橋キャンパス
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Analysis of threshold voltage variations of FinFETs : Separation of short channel effects and space charge effects2008
- Author(s)
  Yusuke Kobayashi, Kazuo Tsutsui, K uniyuki Kakushima, Parhat Ahmet, V. Ramgopal Rao and Hiroshi Iwai
- Organizer
  Analysis of threshold voltage variations of FinFETs : Separation of short channel effects and space charge effects
- Place of Presentation
  Tsukuba, Japan
- Year and Date
  2008-09-26
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Improvement of Thermal Stability of Ni Silicide on N^+-Si by Direct Deposition of Group III Element (A1,B) Thin Film at Ni/Si Interface2008
- Author(s)
  K. Tsutsui, T. Shiozawa, K. Nagahiro, Y. Ohishi, K. Kakushima, P. Ahmet, N. Urushihara, M. Suzuki, and H. Iwai
- Organizer
  Materials for Advanced Metalization (MAM2008)
- Place of Presentation
  Dresden, Germany
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Er層界面挿入によるNiシリサイドのショットキー障壁変調技術2008
- Author(s)
  野口浩平, 大石善久, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学船橋キャンパス
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects2008
- Author(s)
  Y. Kobayashi, Angada B. Sachidc, K. Tsutsui, K. Kakushima, P. Ahmet, V. Ramgopal Rao and H. Iwai
- Organizer
  214th ECS Meeting
- Place of Presentation
  Honolulu, USA
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Schottky Barrier Height Modulation of Ni Silicide/Si Contacts by Insertion of Thin Er or Pt Layers2008
- Author(s)
  Yoshisa Ohishi, Kohei Noguchi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, and Hiroshi Iwai
- Organizer
  7th Int. Semiconductor Technology Conference (ECS-ISTC2008)
- Place of Presentation
  Shanghai, China
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs2008
- Author(s)
  K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, A. N. Chandorkar, T. Hattori and H. Iwai
- Organizer
  214th ECS Meeting
- Place of Presentation
  Honolulu, USA
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Parasitic Effects Depending on Shape of Spacer Region on FinFETs2007
- Author(s)
  Y. Kobayashi, K. Tsutsui, K. Kakushima, V. Hariharan, V. R. Rao, P. Ahmet, H. Iwai
- Organizer
  211th ECS Meeting
- Place of Presentation
  Chicago, USA
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] ダブルゲート型およびプレーナー型MOSFETにおける構造バラつきの影響の比較検討2007
- Author(s)
  小林勇介, 角嶋邦之, Ahmet P., Rao V.R., 筒井一生, 岩井洋
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] 極薄Er層を界面に挿入したNiSi/p-Siショットキー障壁の熱処理温度依存性2007
- Author(s)
  野口浩平, 大石善久, 角嶋邦之, パールハットアヘメト, 筒井一生, 杉井信之, 服部健雄, 岩井洋
- Organizer
  第68回応用物理学会学術講演会
- Place of Presentation
  北海道工業大学
- Data Source
  KAKENHI-PROJECT-18063009
[Presentation] Improvement of Thermal Stability of Ni Silcide by Additive Metals with Specific Introduction Processes2007
- Author(s)
  K. Tsutsui, K. Nagahiro, T. Shiozawa, P. Ahment, K. Kakushima and H. Iwai
- Organizer
  212th ECS Meeting
- Place of Presentation
  Washington D.C., USA
- Data Source
  KAKENHI-PROJECT-18063009

1. PARHAT Ahmet (00418675)

# of Collaborated Projects: 2 results

# of Collaborated Products: 62 results
2. OHMI Shun-ichiro (30282859)

# of Collaborated Projects: 2 results

# of Collaborated Products: 9 results
3. HATTORI Takeo (10061516)

# of Collaborated Projects: 2 results

# of Collaborated Products: 22 results
4. KAKUSHIMA Kuniyuki (50401568)

# of Collaborated Projects: 2 results

# of Collaborated Products: 63 results
5. TSUTSUI Kazuo (60188589)

# of Collaborated Projects: 1 results

# of Collaborated Products: 45 results
6. KOBAYASHI Keisuke (50372149)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
7. TAKATA Yasutaka (90261122)

# of Collaborated Projects: 1 results

# of Collaborated Products: 1 results
8. NOHIRA Hiroshi (30241110)

# of Collaborated Projects: 1 results

# of Collaborated Products: 5 results
9. 堀池靖浩 (20209274)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 財満鎭明 (70158947)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 霜垣幸浩 (60192613)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 角南英夫 (10311804)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 益一哉 (20157192)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

IWAI Hiroshi 岩井 洋

Research Projects

Research Products

Co-Researchers

Comprehensive Observation of Interface dipoles at Insulator Semiconductor InterfacePrincipal Investigator

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Robustness of Three-Dimensional MOSFETsPrincipal Investigator

Principal Investigator

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Development of High Energy Photoelectron Spectroscopy and Its Application to Analyses of Chemical States at High-κ dielectric/Silicon Interface

Principal Investigator

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Research Institution

グローバル・デバイス・インテグレーション技術の創製Principal Investigator

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Research Institution

超機能化グローバル・インターフェース・インテグレーション研究

Principal Investigator

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Research Category

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Research Institution

[Journal Article] Properties of CeOx/La2O3 gate dielectric and its effects on the MOS transistor characteristics2012

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Journal Title

Data Source

[Journal Article] CovalentNature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal2012

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[Journal Article] Valence number transition and silicate formation of cerium oxide films onSi(100)2012

Author(s)

Journal Title

Data Source

[Journal Article] Covalent Nature in La-Silicate Gate Dielectrics for Oxygen Vacancy Removal2012

Author(s)

Journal Title

DOI

Data Source

[Journal Article] EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature2012

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Properties of CeO_x/La_2O_3 gate dielectric and its effects on the MOS transistor characteristics2012

Author(s)

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Data Source

[Journal Article] Valence number transition and silicate formation of cerium oxide films on Si(100)2012

Author(s)

Journal Title

DOI

Data Source

[Journal Article] EOT of 0. 62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature2012

Author(s)

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Data Source

[Journal Article] Rareearth oxide capping effect on La_2O_3 gatedielectrics for equivalent oxidethickness scaling toward 0. 5 nm2011

Author(s)

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[Journal Article] Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process2011

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Data Source

[Journal Article] Rare earth oxide capping effect on La2O3 gate dielectrics for equivalent oxide thickness scaling toward 0.5 nm2011

Author(s)

Journal Title

IWAI Hiroshi 岩井洋