Katayama Ryuji 片山竜二

… Alternative Names

Researcher Number	40343115
Affiliation (Current)	2019: 大阪大学, 工学研究科, 教授
Affiliation (based on the past Project Information) *help	2016 – 2019: 大阪大学, 工学研究科, 教授 2009 – 2015: 東北大学, 金属材料研究所, 准教授 2007 – 2008: 東京大学, 大学院・新領域創成科学研究科, 助教 2002 – 2005: The University of Tokyo, Graduate School of Frontier Sciences, Research Associate, 大学院・新領域創成科学研究科, 助手
Review Section/Research Field	Principal Investigator Applied optics/Quantum optical engineering / Science and Engineering / Crystal engineering / Optical engineering, Photon science / Applied physics and engineering and related fields / Medium-sized Section 30:Applied physics and engineering and related fields Except Principal Investigator Applied materials science/Crystal engineering / Science and Engineering / Applied materials science/Crystal engineering / Basic Section 30020:Optical engineering and photon science-related
Keywords	Principal Investigator 非線形光学 / 窒化物半導体 / 第二高調波発生 / GaN / 量子光学 / 反応性スパッタリング / パルスレーザ堆積 / 光導波路 / エピタキシャル成長 / 光パラメトリック下方変換 … More Except Principal Investigator MOVPE / 窒化物半導体 / エピタキシャル成長 / RF-MBE / InGaAsN / 半導体物性 / GaAsN / 有機金属気相成長 / エピタキシャル / ジメチルヒドラジン / 結晶工学 / 結晶成長 / 光物性 / 単一光子 / 応用光学・量子光工学 / MBE、エピタキシャル / 立方晶窒化物半導体 / MBE / InGaPN / InN / 成長 / アダクト / 分離供給法 / 希薄窒化物半導体 / III-V-N混晶 / 量子ナノ構造 / 量子ドット / 自己形成量子ドット / 希薄窒化物 / 窒化インジウム / 応用光学・量子光工学MBE / MBE,エピタキシャル / 立方晶III-N半導体 / III-N半導体 / 立方晶III族窒化物 / III族窒化物半導体 / 半導体 / 量子光学 / 量子もつれ光子対 / 応用光学・量子光光学 / 励起子分子 / 原子層ドーピング / 等電子トラップ / III-V-N型窒化物混晶 / 混晶半導体 / 巨大バンドギャップボウイング / InAsN / 巨大バンドギャッブボウイング / GaNP / GaNAs / 巨大ボウイング / diluted nitride alloy / slloy semiconductors / huge bandgap bowing / 立方晶窒化ガリウム / 立方晶窒化インジウム / フォトリフレクタンス / ヘテロ構造 / 窒化物混晶半導体 / 立方晶GaN / 立方晶AlGaN / GaN / GaAs / 選択成長 / 立法晶GaN / 立法晶AlGaN / 深い準位 / nitride semiconductors / cubic nitride semiconductors / cubic gallium nitride / cubic indium nitride / photoreflectance / heterostructure / 半導体レーザ / 非線形光学デバイス / 量子情報処理 Less

Exploration of Fabrication Technology, Design of Physical Property and Functionality of Polarity-Controlled Nitride Semiconductor Singular StructurePrincipal InvestigatorOngoing
- Principal Investigator
  
  片山竜二
- Project Period (FY)
  2019 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Osaka University
スクイーズド光発生用半導体レーザ励起窒化物半導体導波路型非線形光学デバイスの開発Ongoing
- Principal Investigator
  
  上向井正裕
- Project Period (FY)
  2019 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30020:Optical engineering and photon science-related
- Research Institution
  Osaka University
Development of High-Throughput Micro-LED Fabrication Process Utilizing Crystallographic Orientation Modulated TemplatesPrincipal InvestigatorOngoing
- Principal Investigator
  
  片山竜二
- Project Period (FY)
  2019 – 2020
- Research Category
  
  Challenging Research (Exploratory)
- Review Section
  
  Medium-sized Section 30:Applied physics and engineering and related fields
- Research Institution
  Osaka University
Nonlinear Optical Device Application of Polarity-Controlled Nitride Semiconductor Singular StructurePrincipal InvestigatorOngoing
- Principal Investigator
  
  片山竜二
- Project Period (FY)
  2017 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Osaka University
Development of Quantum Computing System Based on Ferroelectric/Paraelectric Stacked WaveguidesPrincipal InvestigatorOngoing
- Principal Investigator
  
  片山竜二
- Project Period (FY)
  2017 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Optical engineering, Photon science
- Research Institution
  Osaka University
Development of monolithic cavity wavelength converter made of widegap semiconductorsPrincipal InvestigatorOngoing
- Principal Investigator
  
  片山竜二
- Project Period (FY)
  2017 – 2018
- Research Category
  
  Challenging Research (Exploratory)
- Research Field
  
  Applied physics and engineering and related fields
- Research Institution
  Osaka University
Development of Compact Deep-UV Laser Based on Wavelength Converter Integrated with Blue Laser Light SourcesPrincipal Investigator
- Principal Investigator
  
  Katayama Ryuji
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Crystal engineering
- Research Institution
  Osaka University
  Tohoku University
Generation and control of quantum correlated photons from atomic-layer doped semiconductors
- Principal Investigator
  
  YAGUCHI Hiroyuki
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Saitama University
Research on quantum optical application of novel polar widegap semiconductorsPrincipal Investigator
- Principal Investigator
  
  KATAYAMA Ryuji
- Project Period (FY)
  2011 – 2013
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Applied optics/Quantum optical engineering
- Research Institution
  Tohoku University
Growth of high phase purity cubic III-nitride semiconductor thin films and application of their heterostructures
- Principal Investigator
  
  ONABE Kentaro
- Project Period (FY)
  2010 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
有機N原料によるInNおよび関連混晶薄膜のMOVPE成長
- Principal Investigator
  
  尾鍋研太郎
- Project Period (FY)
  2009 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
Single Photon Generation from locally doped semiconductors
- Principal Investigator
  
  YAGUCHI Hiroyuki
- Project Period (FY)
  2009 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Saitama University
有機N原料によるInNのMOVPE成長
- Principal Investigator
  
  ONABE Kentaro
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  The University of Tokyo
Growth and material applications of narrow-bandgap III-V-N alloy semiconductor quantum nano-structures
- Principal Investigator
  
  ONABE Kentaro
- Project Period (FY)
  2007 – 2009
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
窒化物半導体格子極性反転へテロ構造の作製と非線形光学素子応用Principal Investigator
- Principal Investigator
  
  片山竜二
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Applied optics/Quantum optical engineering
- Research Institution
  The University of Tokyo
Cubic Nitride Semiconductor Heterostructures and Their Application to Optical and Electronic Devices
- Principal Investigator
  
  ONABE Kentaro
- Project Period (FY)
  2000 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo
Huge Bandgap-Bowing Effect in III-V-N Type Nitride Alloy Semiconductors and its Applications
- Principal Investigator
  
  ONABE Kentaro
- Project Period (FY)
  1999 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  The University of Tokyo

All 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 Other

All Journal Article Presentation

[Journal Article] Polarity inversion of aluminum nitride by direct wafer bonding2018
- Author(s)
  Hayashi, Y; Katayama, R; Akiyama, T; Ito, T; Miyake, H
- Journal Title
  
  Applied Physics Express
  
  Volume: 11 Issue: 3 Pages: 031003-031003
- DOI
  10.7567/apex.11.031003
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06415, KAKENHI-PROJECT-17H01063, KAKENHI-PROJECT-17K19078, KAKENHI-PUBLICLY-17H05335
[Journal Article] Biexciton Emission From Single Quantum-Confined Structures in N-Polar (000-1) InGaN/GaN Multiple Quantum Wells2017
- Author(s)
  Takamiya Kengo、Yagi Shuhei、Yaguchi Hiroyuki、Akiyama Hidefumi、Shojiki Kanako、Tanikawa Tomoyuki、Katayama Ryuji
- Journal Title
  
  physica status solidi (b)
  
  Volume: 255 Pages: 1700454-1700454
- DOI
  10.1002/pssb.201700454
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H01063, KAKENHI-PROJECT-15H03968, KAKENHI-PUBLICLY-17H05335
[Journal Article] Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations2017
- Author(s)
  Tomoyuki Tanikawa, Kanako Shojiki, Ryuji Katayama, Shigeyuki Kuboya, Takashi Matsuoka, Yoshio Honda, Hiroshi Amano
- Journal Title
  
  Applied Physics Express
  
  Volume: 10 Issue: 8 Pages: 082101-082101
- DOI
  10.7567/apex.10.082101
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-17H05325, KAKENHI-PROJECT-17H01063, KAKENHI-PROJECT-17K19078, KAKENHI-PUBLICLY-17H05335
[Journal Article] Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar $(000\bar{1})$ p-type GaN grown by metalorganic vapor phase epitaxy2016
- Author(s)
  R. Nonoda, K. Shojiki, T. Tanikawa, S. Kuboya, R. Katayama, and T. Matsuoka
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 (5S) Issue: 5S Pages: 05FE01-05FE01
- DOI
  10.7567/jjap.55.05fe01
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26600082
[Journal Article] Nanometer scale fabrication and optical response of InGaN/GaN quantum disks2016
- Author(s)
  Yi-Chun Lai, Akio Higo, Takayuki Kiba, Cedric Thomas, Shula Chen, Chang Yong Lee, Tomoyuki Tanikawa, Shigeyuki Kuboya, Ryuji Katayama, Kanako Shojiki, Junichi Takayama, Ichiro Yamashita, Akihiro Murayama, Gou-Chung Chi, Peichen Yu, Seiji Samukawa
- Journal Title
  
  Nanotechnology
  
  Volume: 27
- DOI
  10.1088/0957-4484/27/42/425401
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H06359, KAKENHI-PROJECT-26600082
[Journal Article] Large Stokes-like shift in N-polar $(000\bar{1})$ InGaN/GaN multiple-quantum-well light-emitting diodes2016
- Author(s)
  T. Tanikawa, K. Shojiki, S .Kuboya, R. Katayama, and T. Matsuoka
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 (5S) Issue: 5S Pages: 05FJ03-05FJ03
- DOI
  10.7567/jjap.55.05fj03
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26600082, KAKENHI-PROJECT-13J10877, KAKENHI-PROJECT-16K18074
[Journal Article] Homogeneity improvement of N-polar $(000\bar{1})$ InGaN/GaN multiple quantum wells by usingc-plane sapphire substrate with off-cut-angle towarda-sapphire plane2016
- Author(s)
  Kanako Shojiki, Takashi Hanada, Tomoyuki Tanikawa, Yasuhiko Imai, Shigeru Kimura, Ryohei Nonoda, Shigeyuki Kuboya, Ryuji Katayama, Takashi Matsuoka
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 (5S) Issue: 5S Pages: 05FA09-05FA09
- DOI
  10.7567/jjap.55.05fa09
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26600082
[Journal Article] Polarity control of GaN grown on pulsed-laser-deposited AlN/GaN template by metalorganic vapor phase epitaxy2016
- Author(s)
  J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 55 (5S) Issue: 5S Pages: 05FA04-05FA04
- DOI
  10.7567/jjap.55.05fa04
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600082
[Journal Article] Ga‐polar GaN film grown by MOVPE on cleaved ScAlMgO4 (0001) substrate with millimeter‐scale wide terraces2016
- Author(s)
  Takuya Iwabuchi, Shigeyuki Kuboya, Tomoyuki Tanikawa, Takashi Hanada, Ryuji Katayama, Tsuguo Fukuda, Takashi Matsuoka
- Journal Title
  
  physica status solidi (a)
  
  Volume: －
- DOI
  10.1002/pssa.201600754
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26600082
[Journal Article] Suppression of metastable-phase inclusion in N-polar (000-1) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy2015
- Author(s)
  K. Shojiki, J.H.Choi, T. Iwabuchi, N. Usami, T. Tanikawa, S. Kuboya,T. Hanada, R. Katayama, and T. Matsuoka
- Journal Title
  
  Applied Physics Letters
  
  Volume: 106 (22)
- DOI
  10.1063/1.4922131
- Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26600082, KAKENHI-PROJECT-13J10877
[Journal Article] Red to blue wavelength emission of N-polar $(000\bar{1})$ InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy2015
- Author(s)
  K. Shojiki, T. Tanikawa, J.H.Choi, S. Kuboya,T. Hanada, R. Katayama, and T. Matsuoka
- Journal Title
  
  Applied Physics Express
  
  Volume: 8 (6) Issue: 6 Pages: 061005-061005
- DOI
  10.7567/apex.8.061005
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26600082, KAKENHI-PROJECT-13J10877
[Journal Article] Effect of Sapphire Nitridation and Group-III Source Flow Rate Ratio on In-Incorporation Into InGaN Grown by Metalorganic Vapor Phase Epitaxy2014
- Author(s)
  J. H. Choi, K. Shojiki, T. Tanikawa, T. Hanada, R. Katayama, T. Matsuoka
- Journal Title
  
  J. Nanoscience and Nanotechnology
  
  Volume: 14 Pages: 6112-6115
- DOI
  10.1166/jnn.2014.8306
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-13J10877, KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
[Journal Article] Enhancement of surface migration by Mg doping in the metalorganic vapor phase epitaxy of N-polar $(000\bar{1})$ GaN/sapphire2014
- Author(s)
  T. Tanikawa, K. Shojiki, T. Aisaka, T. Kimura, S. Kuboya, T. Hanada, R. Katayama, T. Matsuoka
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53 Issue: 5S1 Pages: 05FL05-05FL05
- DOI
  10.7567/jjap.53.05fl05
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-13J10877, KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
[Journal Article] Effect ofc-plane sapphire substrate miscut angle on indium content of MOVPE-grown N-polar InGaN2014
- Author(s)
  K. Shojiki and R. Katayama(他6名)
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 53(5S1) Issue: 5S1 Pages: 05FL07-05FL07
- DOI
  10.7567/jjap.53.05fl07
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
[Journal Article] Key Factors for Metal Organic Chemical Vapor Deposition of InGaN Films with High InN Molar Fraction2013
- Author(s)
  Yu Huai Liu, Fang Wang, Wei Zhang, Shou Yi Yang, Yuan Tao Zhang, Ryuji Katayama, Takashi Matsuoka
- Journal Title
  
  Applied Mechanics and Materials
  
  Volume: 341 Pages: 204-207
- DOI
  10.4028/www.scientific.net/amm.341-342.204
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010
[Journal Article] Investigation of Indium Iincorporation into InGaN by Nitridation of Sapphire Substrate in MOVPE2013
- Author(s)
  J. H. Choi and R. Katayama(他4名)
- Journal Title
  
  phys. stat. sol. (c)
  
  Volume: 10(3) Pages: 417-420
- DOI
  10.1002/pssc.201200667
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
[Journal Article] RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer2013
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya、R. Katayama, H. Yaguchi, K. Onabe
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: In Press
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] Optical Properties of InN films Grown by Pressurized-reactor Metalorganic Vapor Phase Epitaxy2013
- Author(s)
  Yuantao Zhang, Takeshi Kimura, Kiattiwut Prasertusk, Takuya Iwabuchi, Suresh Kumar, Yuhuai Liu, Ryuji Katayama, Takashi Matsuoka
- Journal Title
  
  Thin Solid Films
  
  Volume: 536 Pages: 152-155
- DOI
  10.1016/j.tsf.2013.04.004
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
[Journal Article] RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer layer2013
- Author(s)
  M Kakuda, S Morikawa, S Kuboya, R Katayama, H Yaguchi, K Onabe
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 378 Pages: 307-309
- DOI
  10.1016/j.jcrysgro.2012.12.120
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010
[Journal Article] Molecular beam epitaxy of ErGaAs alloys on GaAs (001)2013
- Author(s)
  RG Jin, S Yagi, Y Hijikata, S Kuboya, K Onabe, R Katayama, H Yaguchi
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: 378 Pages: 85-87
- DOI
  10.1016/j.jcrysgro.2012.12.043
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24360004
[Journal Article] RF-MBE growth of cubic AlN on MgO(001) substrates via 2-step c-GaN buffer2013
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya、R. Katayama, H. Yaguchi, K. Onabe,
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: (In Press)
- URL
  http://www.sciencedirect.com/science/journal/00220248?oldURL=y
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22360005
[Journal Article] Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs2013
- Author(s)
  Kengo Takamiya, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi
- Journal Title
  
  AIP Conference Prodeedings
  
  Volume: 1566 (1) Pages: 538-539
- DOI
  10.1063/1.4848523
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24360004
[Journal Article] Tilted Domain and Indium Content of InGaN Layer on $m$-Plane GaN Substrate Grown by Metalorganic Vapor Phase Epitaxy2012
- Author(s)
  K. Shojiki and R. Katayama(他4名)
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 51 Pages: 04DH01-04DH01
- DOI
  10.1143/jjap.51.04dh01
- ISSN
  0021-4922, 1347-4065
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
[Journal Article] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2012
- Author(s)
  K. Takamiya, Y.Endo, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H. Yaguchi
- Journal Title
  
  Materials Science Forum
  
  Volume: Vol.706-709 Pages: 2916-2921
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] Effect of Nitridation on Indium composition of InGaN Films2012
- Author(s)
  J. H. Choi, S. Kumar, S. Y. Ji, K. Shojiki, T. Hanada, R. Katayama and T. Matsuoka
- Journal Title
  
  Key. Eng. Mater.
  
  Volume: 508 Pages: 193-193
- DOI
  10.4028/www.scientific.net/kem.508.193
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
[Journal Article] Effect of Nitridation on Indium-composition of InGaN Films2012
- Author(s)
  J. H. Choi and R. Katayama(他5名)
- Journal Title
  
  Key. Eng. Mater
  
  Volume: 508 Pages: 193-198
- URL
  http://www.scientific.net/KEM.508.193
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010
[Journal Article] Optical properties of the periodic polarity-inverted GaN waveguides2012
- Author(s)
  R. Katayama(他7名)
- Journal Title
  
  Proc. of SPIE
  
  Volume: 8268 Pages: 826814-826913
- DOI
  10.1117/12.909831
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23686010
[Journal Article] Biexciton Luminescence from Individual Isoelectronic Traps in Nitrogen $\delta$-Doped GaAs2012
- Author(s)
  K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, and H. Yaguchi
- Journal Title
  
  Applied Physics Express
  
  Volume: 5 Issue: 11 Pages: 111201-111201
- DOI
  10.1143/apex.5.111201
- ISSN
  1882-0778, 1882-0786
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-20104004, KAKENHI-PROJECT-23360135, KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24360004
[Journal Article] Photoluminescence from single isoelectronic traps in nitrogen delta-dopedGaAs grown on GaAs(111)A2010
- Author(s)
  T.Fukushima, Y.Hijikata, H.Yaguchi, S.Yoshida, M.Okano, M.Yoshita, H.Akiyama, S.Kuboya, R.Katayama, K.Onabe
- Journal Title
  
  Physica E(掲載確定)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] Photoluminescence from single is electronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A2010
- Author(s)
  T. Fukushima, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Okano, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe
- Journal Title
  
  Physica
  
  Volume: Vol.42, No10
- DOI
  10.1016/j.physe.2009.12.011
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A2010
- Author(s)
  T.Fukushima, Y.Hijikata, H.Yaguchi, S.Yoshida, M.Okano, M.Yoshita, H.Akiyama, S.Kuboya, R.Katayama, K.Onabe
- Journal Title
  
  Physica E
  
  Volume: 42 Pages: 2529-2531
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21360004
[Journal Article] MOVPE Growth of InN films Using 1,1-Dimethylhydrazine as a Nitrogen2009
- Author(s)
  Q.T.Thieu, Y.Seki, S.Kuboya, R.Katayama, K.Onabe
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 2802-2805
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] MOVPE Growth of InN films Using 1,1-Dimethylhydrazine as a Nitrogen Precursor2009
- Author(s)
  Q.T.Thieu, Y.Seki, S.Kuboya, R.Katayama, K.Onabe
- Journal Title
  
  Journal of Crystal Growth 311
  
  Pages: 2802-2805
- Peer Reviewed
- Data Source
  KAKENHI-PUBLICLY-21016003
[Journal Article] MOVPE growth of InN films using 1, 1-dimethylhydrazine as a nitrogen precursor2009
- Author(s)
  Q. T. Thieu, Y. Seki, S. Kuboya, R. Katayama, K. Onabe
- Journal Title
  
  Journal of Crystal Growth Vol. 311
  
  Pages: 2802-2805
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] MOVPE Growth of InN films Using 1, 1-Dimethylhydrazine as a Nitrogen Precursor Journal of Crystal Growth2009
- Author(s)
  Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
- Journal Title
  
  Journal of Crystal Growth (印刷中)(掲載確定)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19032002
[Journal Article] Metastable cubic InN layers on GaAs(001)substrates grown by MBE : Growth condition and crystal structure2009
- Author(s)
  S.Sanorpim, P.Jantawongrit, S.Kuntharin, C.Thanachayanont, T.Nakamura, R.Katayama, K.Onabe
- Journal Title
  
  physica status solidi(c) 6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] Incorporation of N in high N-content GaAsN films investigated by Raman scattering2008
- Author(s)
  S. Sanorpim, P. Panpech, S. Vijarnwannaluk, F. Nakajima, S. Kuboya, R. Katayama, K. Onabe
- Journal Title
  
  physica status solidi (c) Vol. 5
  
  Pages: 2923-2925
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] Effect of substrate-surface orientation on the N incorporation in GaAsN films on GaAs grown by MOVPE2008
- Author(s)
  P. Klangtakai, S. Sanorpim, S. Kuboya, R. Katayama, K. Onabe
- Journal Title
  
  Advanced Materials Research Vol. 55-57
  
  Pages: 825-828
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] MOVPE growth and photoluminescence properties of InAsN QDs2008
- Author(s)
  S. Kuboya, S. Takahashi, Q. T. Thieu, F. Nakajima, R. Katayama, K. Onabe
- Journal Title
  
  physica status solidi (c) Vol. 5
  
  Pages: 1715-1718
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] Growth and post-growth rapid thermal annealing of InGaPN on GaP grown by metalorganic vapor phase epitaxy2007
- Author(s)
  S. Sanorpim, F. Nakajima, N. Nakadan, T. Kimura, R. Katayama, K. Onabe
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 150-153
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] Structural investigation of InGaAsN films grown on pseudo-lattice-matched InGaAs substrates by metalorganic vapor phase epitaxy2007
- Author(s)
  P. Kongjaeng, S. Sanorpim, T. Yamamoto, W. Ono, F. Nakajima, R. Katayama, K. Onabe
- Journal Title
  
  Journal of Crystal Growth Vol. 298
  
  Pages: 111-115
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] InAsN quantum dots grown on GaAs(001) substrates by MOVPE2007
- Author(s)
  S. Kuboya, Q. T. Thieu, F. Nakajima, R. Katayama, K. Onabe
- Journal Title
  
  physica status solidi (c) 4
  
  Pages: 2387-2390
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] Photoluminescence and photoluminescence-excitation spectro-scopy of InGaPN/GaP lattice-matched single quantum well structures grown by MOVPE2007
- Author(s)
  D. Kaewket, S. Tungasmita, S. Sanorpim, F. Nakajima, N. Nakadan, T. Kimura, R. Katayama, K. Onabe
- Journal Title
  
  Journal of Crystal Growth Vol. 298
  
  Pages: 531-535
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] Structural investigation of InGaAsN films grown on pseudo-lattice-matched InGaAs substrates by metalorganic vapor phase epitaxy2007
- Author(s)
  P. Kongjaeng, S. Sanorpim, T. Yamamoto, W. Ono, F. Nakajima, R. Katayama, K. Onabe
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 111-115
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] Photoluminescence and photoluminescence-excitation spectroscopy of InGaPN/GaP lattice-matched single quantum well structures grown by MOVPE2007
- Author(s)
  D. Kaewket, S. Tungasmita, S. Sanorpim, F. Nakajima, N. Nakadan, T. Kimura, R. Katayama, K. Onabe
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 531-535
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] MOVPE and characterization of InAsN/GaAs multiple quantum wells2007
- Author(s)
  S. Kuboya, Q. T. Thieu, W. Ono, F. Nakajima, R. Katayama, K. Onabe
- Journal Title
  
  Journal of Crystal Growth Vol. 298
  
  Pages: 544-547
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] InAsN quantum dots grown on GaAs(001) substrates by MOVPE2007
- Author(s)
  S. Kuboya, Q. T. Thieu, F. Nakajima, R. Katayama, K. Onabe
- Journal Title
  
  physica status solidi (c) Vol. 4
  
  Pages: 2387-2390
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] Growth and post-growth rapid thermal annealing of InGaPN on GaP grown by metalorganic vapor phase epitaxy2007
- Author(s)
  S. Sanorpim, F. Nakajima, N. Nakadan, T. Kimura, R. Katayama, K. Onabe
- Journal Title
  
  Journal of Crystal Growth Vol. 298
  
  Pages: 150-153
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] MOVPE and characterization of InAsN/GaAs multiple quantum wells2007
- Author(s)
  S. Kuboya, Q. T. Thieu, W. Ono, F. Nakajima, R. Katayama, K. Onabe
- Journal Title
  
  Journal of Crystal Growth 298
  
  Pages: 544-547
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19360003
[Journal Article] Shutterless nitrogen flux modulation using a dual-mode rf-plasma operation during RF-MBE growth of GaN2006
- Author(s)
  R.Katayama, H.Tsurusawa, T.Nakamura, H.Komaki, K.Onabe
- Journal Title
  
  physica status solidi (出版中)
- Data Source
  KAKENHI-PROJECT-16760032
[Journal Article] Buffer design for nitrogen polarity GaN on sapphire (0001) by RF-MBE and application to the nanostructure formation using KOH etching2006
- Author(s)
  R.Katayama, K.Onabe
- Journal Title
  
  Physica E (出版中)
- Data Source
  KAKENHI-PROJECT-16760032
[Journal Article] Fabrication of cubic and hexagonal GaN microcrystals on GaAs(001) substrates with relatively-thin low temperature GaN buffer layer2005
- Author(s)
  R.Katayama, K.Onabe
- Journal Title
  
  Journal of Crystal Growth 278
  
  Pages: 431-436
- Data Source
  KAKENHI-PROJECT-16760032
[Journal Article] Buffer design for nitrogen polarity GaN on sapphire (0001) by RF-MBE and application to the nanostructure formation using KOH etching2005
- Author(s)
  R.Katayama, K.Onabe
- Journal Title
  
  Physica E
- Data Source
  KAKENHI-PROJECT-16760032
[Journal Article] Fabrication of cubic and hexagonal GaN micro-crystals on GaAs(001) substrates with relatively-thin low temperature GaN buffer layer2005
- Author(s)
  R.Katayama, K.Onabe
- Journal Title
  
  Journal of Crystal Growth 276(1-2)
- Data Source
  KAKENHI-PROJECT-16760032
[Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発：GaNストリップ導波路型方向性結合器の設計2018
- Author(s)
  紀平将史，三輪純也，上向井正裕，藤諒健，藤原康文，片山竜二
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PUBLICLY-17H05335
[Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発：GaNリブ導波路型方向性結合器の特性評価2018
- Author(s)
  三輪純也，紀平将史，上向井正裕，藤諒健，藤原康文，片山竜二
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] 窒化物半導体極性制御特異構造の非線形光学素子応用2018
- Author(s)
  片山竜二
- Organizer
  科学研究費補助金新学術領域研究領域報告会
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] 表面活性化接合とSi基板剥離によるGaN極性反転構造の作製2018
- Author(s)
  小野寺卓也，上向井正裕，髙橋一矢，岩谷素顕，赤﨑勇，林侑介，三宅秀人，久志本真希，鄭惠貞，本田善央，天野浩，片山竜二
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] ZrO2 /AlN積層導波路を用いた深紫外第二高調波発生デバイスの設計2018
- Author(s)
  山口修平，上向井正裕，髙橋一矢，岩谷素顕，赤﨑勇，林侑介，三宅秀人，山田智也，藤原康文，片山竜二
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] GaNモノリシック微小二重共振器型第二高調波発生デバイスの作製2018
- Author(s)
  南部誠明，上向井正裕，藤諒健，山田智也，藤原康文，片山竜二
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] GaNモノリシック微小二重共振器型第二高調波発生デバイスの作製2018
- Author(s)
  南部誠明，上向井正裕，藤諒健，山田智也，藤原康文，片山竜二
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PUBLICLY-17H05335
[Presentation] 深溝周期構造を用いたGaAsP量子井戸波長可変単一モードレーザー2018
- Author(s)
  上向井正裕，片山竜二
- Organizer
  第38回レーザー学会学術講演会
- Invited
- Data Source
  KAKENHI-PUBLICLY-17H05335
[Presentation] 表面活性化接合とSi基板剥離によるGaN極性反転構造の作製2018
- Author(s)
  小野寺卓也，上向井正裕，髙橋一矢，岩谷素顕，赤﨑勇，林侑介，三宅秀人，久志本真希，鄭惠貞，本田善央，天野浩，片山竜二
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発：GaNストリップ導波路型方向性結合器の設計2018
- Author(s)
  紀平将史，三輪純也，上向井正裕，藤諒健，藤原康文，片山竜二
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] 深溝周期構造を用いたGaAsP量子井戸波長可変単一モードレーザー2018
- Author(s)
  上向井正裕，片山竜二
- Organizer
  第38回レーザー学会学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] 周期的スロット構造を用いたGaAsP波長可変単一モードレーザ2018
- Author(s)
  楠本壮，上向井正裕，片山竜二
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] Second harmonic generation from polarity-inverted GaN waveguide2018
- Author(s)
  R. Katayama
- Organizer
  SPIE Photonics West 2018
- Int'l Joint Research / Invited
- Data Source
  KAKENHI-PUBLICLY-17H05335
[Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発：GaNリブ導波路型方向性結合器の特性評価2018
- Author(s)
  三輪純也，紀平将史，上向井正裕，藤諒健，藤原康文，片山竜二
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] 周期的スロット構造を用いたGaAsP波長可変単一モードレーザ2018
- Author(s)
  楠本壮，上向井正裕，片山竜二
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PUBLICLY-17H05335
[Presentation] GaNモノリシック微小二重共振器型第二高調波発生デバイスの作製2018
- Author(s)
  南部誠明，上向井正裕，藤諒健，山田智也，藤原康文，片山竜二
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] ZrO2 /AlN積層導波路を用いた深紫外第二高調波発生デバイスの設計2018
- Author(s)
  山口修平，上向井正裕，髙橋一矢，岩谷素顕，赤﨑勇，林侑介，三宅秀人，山田智也，藤原康文，片山竜二
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] 深溝周期構造を用いたGaAsP量子井戸波長可変単一モードレーザー2018
- Author(s)
  上向井正裕，片山竜二
- Organizer
  第38回レーザー学会学術講演会
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] Second harmonic generation from polarity-inverted GaN waveguide2018
- Author(s)
  R. Katayama
- Organizer
  SPIE Photonics West 2018
- Int'l Joint Research / Invited
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] 周期的スロット構造を用いたGaAsP波長可変単一モードレーザ2018
- Author(s)
  楠本壮，上向井正裕，片山竜二
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] 窒化物半導体極性制御特異構造の非線形光学素子応用2018
- Author(s)
  片山竜二
- Organizer
  科学研究費補助金新学術領域研究領域報告会
- Data Source
  KAKENHI-PUBLICLY-17H05335
[Presentation] ZrO2 /AlN積層導波路を用いた深紫外第二高調波発生デバイスの設計2018
- Author(s)
  山口修平，上向井正裕，髙橋一矢，岩谷素顕，赤﨑勇，林侑介，三宅秀人，山田智也，藤原康文，片山竜二
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PUBLICLY-17H05335
[Presentation] 表面活性化接合とSi基板剥離によるGaN極性反転構造の作製2018
- Author(s)
  小野寺卓也，上向井正裕，髙橋一矢，岩谷素顕，赤﨑勇，林侑介，三宅秀人，久志本真希，鄭惠貞，本田善央，天野浩，片山竜二
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PUBLICLY-17H05335
[Presentation] Second harmonic generation from polarity-inverted GaN waveguide2018
- Author(s)
  R. Katayama
- Organizer
  SPIE Photonics West 2018
- Int'l Joint Research / Invited
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発：GaNストリップ導波路型方向性結合器の設計2018
- Author(s)
  紀平将史，三輪純也，上向井正裕，藤諒健，藤原康文，片山竜二
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] 窒化物半導体極性制御特異構造の非線形光学素子応用2018
- Author(s)
  片山竜二
- Organizer
  科学研究費補助金新学術領域研究領域報告会
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発：GaNリブ導波路型方向性結合器の特性評価2018
- Author(s)
  三輪純也，紀平将史，上向井正裕，藤諒健，藤原康文，片山竜二
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PUBLICLY-17H05335
[Presentation] 高次結合ディープエッチDBRレーザの作製と単一モード発振2017
- Author(s)
  山下諒大、上向井正裕、片山竜二
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県・横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] GaNモノリシック微小二重共振器型第二高調波発生デバイスの設計2017
- Author(s)
  南部誠明，上向井正裕，藤諒健，山田智也，藤原康文，片山竜二
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PUBLICLY-17H05335
[Presentation] AlN・GaN・LiNbO3の表面活性化ウエハ接合技術の開発2017
- Author(s)
  小野寺卓也，上向井正裕，髙橋一矢，岩谷素顕，赤﨑勇，林侑介，三宅秀人，片山竜二
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] GaNモノリシック微小二重共振器型第二高調波発生デバイスの設計2017
- Author(s)
  南部誠明，上向井正裕，藤諒健，山田智也，藤原康文，片山竜二
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] 疑似位相整合SHGに向けたFace to FaceアニールによるAlN分極反転構造の作製2017
- Author(s)
  林侑介，三宅秀人，平松和政，片山竜二
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] 窒化物半導体極性制御特異構造の非線形光学素子応用2017
- Author(s)
  片山竜二
- Organizer
  科学研究費補助金新学術領域研究領域報告会
- Data Source
  KAKENHI-PUBLICLY-17H05335
[Presentation] 窒化物半導体極性制御特異構造の非線形光学素子応用2017
- Author(s)
  片山竜二
- Organizer
  科学研究費補助金新学術領域研究領域報告会
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] 疑似位相整合SHGに向けたFace to FaceアニールによるAlN分極反転構造の作製2017
- Author(s)
  林侑介，三宅秀人，平松和政，片山竜二
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] Development of Surface-Activated Wafer Bonding Method of AlN, GaN and LiNbO32017
- Author(s)
  T. Onodera, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake and R. Katayama
- Organizer
  第36回電子材料シンポジウム EMS36
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] 極性反転積層AlN光導波路を用いた波長変換デバイスの設計2017
- Author(s)
  山口修平，上向井正裕，髙橋一矢，岩谷素顕，赤﨑勇，林侑介，三宅秀人，山田智也，藤原康文，片山竜二
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PUBLICLY-17H05335
[Presentation] Design of GaN monolithic doubly-resonant microcavity SHG device2017
- Author(s)
  T. Nambu, M. Uemukai, R. Fuji, T. Yamada, Y. Fujiwara and R. Katayama
- Organizer
  第36回電子材料シンポジウム EMS36
- Data Source
  KAKENHI-PUBLICLY-17H05335
[Presentation] GaAsP quantum well tunable single-mode semiconductor lasers with deeply etched periodic structures2017
- Author(s)
  M. Uemukai, A. Yamashita, S. Kusumoto, R. Katayama
- Organizer
  発光素子とその産業応用に関する国際学会 LEDIA'17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] GaAsP quantum well single-mode semiconductor laser with periodically slotted structure2017
- Author(s)
  S. Kusumoto, M. Uemukai and R. Katayama
- Organizer
  第36回電子材料シンポジウム EMS36
- Data Source
  KAKENHI-PUBLICLY-17H05335
[Presentation] Development of Surface-Activated Wafer Bonding Method of AlN, GaN and LiNbO32017
- Author(s)
  T. Onodera, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake and R. Katayama
- Organizer
  第36回電子材料シンポジウム EMS36
- Data Source
  KAKENHI-PUBLICLY-17H05335
[Presentation] 窒化物半導体極性制御特異構造の非線形光学素子応用2017
- Author(s)
  片山竜二
- Organizer
  科学研究費補助金新学術領域研究領域報告会
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] GaN rib waveguide directional coupler for optical quantum information processing systems2017
- Author(s)
  J. Miwa, M. Kihira, M. Uemukai, R. Fuji, Y. Fujiwara and R. Katayama
- Organizer
  第36回電子材料シンポジウム EMS36
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] Design of polarity-inverted multilayer AlN waveguide for deep UV second harmonic generation2017
- Author(s)
  S. Yamaguchi, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake, T. Yamada, Y. Fujiwara and R. Katayama
- Organizer
  第36回電子材料シンポジウム EMS36
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発：GaNリブ導波路型方向性結合器の作製2017
- Author(s)
  三輪純也，上向井正裕，藤諒健，藤原康文，片山竜二
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PUBLICLY-17H05335
[Presentation] AlN・GaN・LiNbO3の表面活性化ウエハ接合技術の開発2017
- Author(s)
  小野寺卓也，上向井正裕，髙橋一矢，岩谷素顕，赤﨑勇，林侑介，三宅秀人，片山竜二
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PUBLICLY-17H05335
[Presentation] GaAsP quantum well tunable single-mode semiconductor lasers with deeply etched periodic structures2017
- Author(s)
  M. Uemukai, A. Yamashita, S. Kusumoto, R. Katayama
- Organizer
  発光素子とその産業応用に関する国際学会 LEDIA'17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] Polarity inversion of AlN fabricated by wafer bonding and its atomic arrangement models2017
- Author(s)
  Y. Hayashi, H. Miyake,K. Hiramatsu, T. Akiyama, T. Ito and R. Katayama
- Organizer
  第36回電子材料シンポジウム EMS36
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] Design of polarity-inverted multilayer AlN waveguide for deep UV second harmonic generation2017
- Author(s)
  S. Yamaguchi, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake, T. Yamada, Y. Fujiwara and R. Katayama
- Organizer
  第36回電子材料シンポジウム EMS36
- Data Source
  KAKENHI-PUBLICLY-17H05335
[Presentation] GaN rib waveguide directional coupler for optical quantum information processing systems2017
- Author(s)
  J. Miwa, M. Kihira, M. Uemukai, R. Fuji, Y. Fujiwara and R. Katayama
- Organizer
  第36回電子材料シンポジウム EMS36
- Data Source
  KAKENHI-PUBLICLY-17H05335
[Presentation] Design of polarity-inverted multilayer AlN waveguide for deep UV second harmonic generation2017
- Author(s)
  S. Yamaguchi, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake, T. Yamada, Y. Fujiwara and R. Katayama
- Organizer
  第36回電子材料シンポジウム EMS36
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] GaAsP quantum well single-mode semiconductor laser with periodically slotted structure2017
- Author(s)
  S. Kusumoto, M. Uemukai and R. Katayama
- Organizer
  第36回電子材料シンポジウム EMS36
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] Development of Surface-Activated Wafer Bonding Method of AlN, GaN and LiNbO32017
- Author(s)
  T. Onodera, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake and R. Katayama
- Organizer
  紫外発光材料及びデバイスに関する国際ワークショップ IWUMD2017
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-17H05335
[Presentation] 疑似位相整合SHGに向けたFace to FaceアニールによるAlN分極反転構造の作製2017
- Author(s)
  林侑介，三宅秀人，平松和政，片山竜二
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PUBLICLY-17H05335
[Presentation] AlN・GaN・LiNbO3の表面活性化ウエハ接合技術の開発2017
- Author(s)
  小野寺卓也，上向井正裕，髙橋一矢，岩谷素顕，赤﨑勇，林侑介，三宅秀人，片山竜二
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] ワイドギャップ窒化物半導体による量子情報処理システム開発2017
- Author(s)
  片山竜二
- Organizer
  日本学術振興会第162委員会第106回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] 極性反転積層AlN光導波路を用いた波長変換デバイスの設計2017
- Author(s)
  山口修平，上向井正裕，髙橋一矢，岩谷素顕，赤﨑勇，林侑介，三宅秀人，山田智也，藤原康文，片山竜二
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] 極性ワイドギャップ半導体の量子光学応用2017
- Author(s)
  片山竜二
- Organizer
  IEEE Photonics Society Kansai Chapter 講演会
- Place of Presentation
  伊勢市観光文化会館（三重県・伊勢市）
- Year and Date
  2017-01-18
- Invited
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] Design of GaN monolithic doubly-resonant microcavity SHG device2017
- Author(s)
  T. Nambu, M. Uemukai, R. Fuji, T. Yamada, Y. Fujiwara and R. Katayama
- Organizer
  第36回電子材料シンポジウム EMS36
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] ワイドギャップ半導体の量子光学素子応用2017
- Author(s)
  片山竜二
- Organizer
  第64回応用物理学会春季学術講演会　シンポジウム金属酸化物の結晶物性に迫る
- Place of Presentation
  パシフィコ横浜（神奈川県・横浜市）
- Year and Date
  2017-03-14
- Invited
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] GaAsP quantum well tunable single-mode semiconductor lasers with deeply etched periodic structures2017
- Author(s)
  M. Uemukai, A. Yamashita, S. Kusumoto, R. Katayama
- Organizer
  発光素子とその産業応用に関する国際学会 LEDIA'17
- Int'l Joint Research
- Data Source
  KAKENHI-PUBLICLY-17H05335
[Presentation] ワイドギャップ窒化物半導体による量子情報処理システム開発2017
- Author(s)
  片山竜二
- Organizer
  日本学術振興会第162委員会第106回研究会
- Invited
- Data Source
  KAKENHI-PUBLICLY-17H05335
[Presentation] Face to FaceアニールによるAlN分極反転構造の作製と評価2017
- Author(s)
  林侑介，三宅秀人，平松和政，片山竜二
- Organizer
  第9回ナノ構造・エピタキシャル成長講演会
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] Polarity inversion of AlN fabricated by wafer bonding and its atomic arrangement models2017
- Author(s)
  Y. Hayashi, H. Miyake,K. Hiramatsu, T. Akiyama, T. Ito and R. Katayama
- Organizer
  第36回電子材料シンポジウム EMS36
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] ワイドギャップ窒化物半導体による量子情報処理システム開発2017
- Author(s)
  片山竜二
- Organizer
  日本学術振興会第162委員会第106回研究会
- Invited
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] Development of Surface-Activated Wafer Bonding Method of AlN, GaN and LiNbO32017
- Author(s)
  T. Onodera, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake and R. Katayama
- Organizer
  紫外発光材料及びデバイスに関する国際ワークショップ IWUMD2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] Development of Surface-Activated Wafer Bonding Method of AlN, GaN and LiNbO32017
- Author(s)
  T. Onodera, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake and R. Katayama
- Organizer
  第36回電子材料シンポジウム EMS36
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発：GaNリブ導波路型方向性結合器の作製2017
- Author(s)
  三輪純也，上向井正裕，藤諒健，藤原康文，片山竜二
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] AlN系窒化物半導体のウェハ接合技術の検討2017
- Author(s)
  高橋一矢、篠田涼二、岩谷素顕、竹内哲也、上山智、服部友一、赤崎勇、片山竜二、上向井正裕
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜（神奈川県・横浜市）
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] Design of GaN monolithic doubly-resonant microcavity SHG device2017
- Author(s)
  T. Nambu, M. Uemukai, R. Fuji, T. Yamada, Y. Fujiwara and R. Katayama
- Organizer
  第36回電子材料シンポジウム EMS36
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] 極性反転積層AlN光導波路を用いた波長変換デバイスの設計2017
- Author(s)
  山口修平，上向井正裕，髙橋一矢，岩谷素顕，赤﨑勇，林侑介，三宅秀人，山田智也，藤原康文，片山竜二
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発：GaNリブ導波路型方向性結合器の作製2017
- Author(s)
  三輪純也，上向井正裕，藤諒健，藤原康文，片山竜二
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] Development of Surface-Activated Wafer Bonding Method of AlN, GaN and LiNbO32017
- Author(s)
  T. Onodera, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake and R. Katayama
- Organizer
  紫外発光材料及びデバイスに関する国際ワークショップ IWUMD2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] Abrupt Polarity Inversion of AlN for Second Harmonic Generation in DUV Region2017
- Author(s)
  Y. Hayashi, H. Miyake,K. Hiramatsu, T. Akiyama, T. Ito and R. Katayama
- Organizer
  紫外発光材料及びデバイスに関する国際ワークショップ IWUMD2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] Polarity inversion of AlN fabricated by wafer bonding and its atomic arrangement models2017
- Author(s)
  Y. Hayashi, H. Miyake,K. Hiramatsu, T. Akiyama, T. Ito and R. Katayama
- Organizer
  第36回電子材料シンポジウム EMS36
- Data Source
  KAKENHI-PUBLICLY-17H05335
[Presentation] GaNモノリシック微小二重共振器型第二高調波発生デバイスの設計2017
- Author(s)
  南部誠明，上向井正裕，藤諒健，山田智也，藤原康文，片山竜二
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H01063
[Presentation] GaAsP quantum well single-mode semiconductor laser with periodically slotted structure2017
- Author(s)
  S. Kusumoto, M. Uemukai and R. Katayama
- Organizer
  第36回電子材料シンポジウム EMS36
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] GaN rib waveguide directional coupler for optical quantum information processing systems2017
- Author(s)
  J. Miwa, M. Kihira, M. Uemukai, R. Fuji, Y. Fujiwara and R. Katayama
- Organizer
  第36回電子材料シンポジウム EMS36
- Data Source
  KAKENHI-PROJECT-17K19078
[Presentation] ワイドギャップ半導体研究の新展開量子光学デバイス・システム開発2016
- Author(s)
  片山竜二
- Organizer
  第１回電子材料若手研究会
- Place of Presentation
  広島大学（広島県・東広島市）
- Invited
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] ワイドギャップ半導体の量子光学応用2016
- Author(s)
  片山竜二
- Organizer
  第９回窒化物半導体の成長・評価に関する夏期セミナー
- Place of Presentation
  立命館大学（滋賀県・草津市）
- Year and Date
  2016-08-29
- Invited
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] 窒化物半導体極性制御特異構造の非線形光学素子応用2016
- Author(s)
  片山竜二
- Organizer
  第77回応用物理学会秋季学術講演会　シンポジウム窒化物半導体特異構造の科学　～新機能の発現と理解～
- Place of Presentation
  朱鷺メッセ（新潟県・新潟市）
- Year and Date
  2016-09-13
- Invited
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] 横型疑似位相整合AlN導波路を用いた深紫外第二高調波発生素子の設計2015
- Author(s)
  三谷悠貴，片山竜二，劉陳燁，正直花奈子，谷川智之，窪谷茂幸，松岡隆志
- Organizer
  日本結晶成長学会ナノ構造エピタキシャル成長分科会第7回窒化物半導体研究会
- Place of Presentation
  東北大学片平さくらホール、宮城県仙台市
- Year and Date
  2015-05-07
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] Polarity control of MOVPE-grown GaN on AlN/GaN templates2015
- Author(s)
  J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama and T. Matsuoka
- Organizer
  日本結晶成長学会ナノ構造エピタキシャル成長分科会第7回窒化物半導体研究会
- Place of Presentation
  東北大学片平さくらホール、宮城県仙台市
- Year and Date
  2015-05-07
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] Polarity-controlled MOVPE growth of GaN on PLD-AlN templates2015
- Author(s)
  J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama and T. Matsuoka
- Organizer
  The 34th Electronic Materials Symposium
- Place of Presentation
  ラフォーレ琵琶湖、滋賀県守山市
- Year and Date
  2015-07-15
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] Observation of Indium Content Distribution on m-plane InGaN Film with Hilloks2014
- Author(s)
  K. Shojiki, T. Hanada, J. H. Choi, Y. Imai, S. Kimura, T. Shimada, T. Tanikawa, R. Katayama, T. Matsuoka
- Organizer
  2013 Annual Meeting of Excellent Graduate School for "Materials Integration Center" and "Materials Science Center" & International Workshop on Advanced Materials Synthesis Process and Nanostructure
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] c面Al2O3基板上にMOVPE成長したGaNの異常分散X線回折による極性判定2014
- Author(s)
  花田貴，稲葉克彦，正直花奈子，崔正焄，片山竜二，谷川智之，窪谷茂幸，松岡隆志
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学淵野辺キャンパス
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Suppression of Metastable-Phase Inclusion in MOVPE-Grown N-Polar (000-1) InGaN/GaN Multiple Quantum Wells2014
- Author(s)
  K. Shojiki, J. H. Choi, T. Iwabuchi, N. Usami, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
- Organizer
  Conference on LED and it’s industrial application ‘14
- Place of Presentation
  Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] MOVPE成長－c面InGaN/GaN多重量子井戸構造における準安定相混在の抑制2014
- Author(s)
  正直花奈子，崔正焄，岩渕拓也，宇佐美徳隆，谷川智之，窪谷茂幸，花田貴，片山竜二，松岡隆志
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学淵野辺キャンパス
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Realization of p-Type Conduction in Mg-Doped N-Polar (000-1) GaN Grown by Metalorganic Vapor Phase Epitaxy2014
- Author(s)
  T. Tanikawa, J. H. Choi, K. Shojiki, S. Kuboya, R. Katayama, and T. Matsuoka
- Organizer
  Conference on LED and it’s industrial application ‘14
- Place of Presentation
  Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Crystallographic Polarity Dependence of Surface Morphology Evolution during MOVPE Growth of GaN/Sapphire2013
- Author(s)
  N. Yoshinogawa, T. Iwabuchi, K. Shojiki, T. Kimura, T. Tanikawa, R. Katayama and T. Matsuoka
- Organizer
  第32回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] サファイア基板上GaN薄膜の有機金属気相成長挙動の格子極性依存性2013
- Author(s)
  吉野川伸雄,片山竜二(他5名、6番)
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川
- Year and Date
  2013-03-28
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] 窒素δドープGaAs中の単一等電子トラップによる励起子分子発光の時間分解フォトルミネッセンス測定2013
- Author(s)
  高宮健吾，八木修平，土方泰斗，望月敏光，吉田正裕，秋山英文，窪谷茂幸，片山竜二，尾鍋研太郎，矢口裕之
- Organizer
  第74回応用物理学会学術講演会
- Place of Presentation
  同志社大学田辺キャンパス
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Y立方晶AlNおよび高Al濃度立方晶AlGaNのRF-MBE成長2013
- Author(s)
  角田雅弘,森川生,窪谷茂幸,片山竜二,矢口裕之,尾鍋研太郎
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学(神奈川)
- Year and Date
  2013-03-28
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Effect of c-plane Sapphire Substrate Miscut-angle on Indium Content of MOVPE-grown N-polar InGaN2013
- Author(s)
  K. Shojiki, J.-H. Choi, H. Shindo, T. Kimura, T. Tanikawa, T. Hanada, R. Katayama, and T. Matsuoka
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Inサーファクタントによる(0001)GaNのMOVPE成長におけるステップフロー成長の促進2013
- Author(s)
  逢坂崇，谷川智之，正直花奈子，木村健司，岩渕拓也，花田貴，片山竜二，松岡隆志
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] MOVPE成長N極性InGaNにおけるIn組成のc面サファイア基板微傾斜角依存性2013
- Author(s)
  正直花奈，崔正焄，進藤裕文，木村健司，谷川智之，花田貴，片山竜二，松岡隆志
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] MOVPE成長–c面InGaN/GaN多重量子井戸構造における準安定相混在の抑制2013
- Author(s)
  正直花奈子, 崔正焄, 岩渕拓也, 宇佐美徳隆, 谷川智之, 窪谷茂幸, 花田貴, 片山竜二, 松岡隆志
- Organizer
  第68回応用物理学会東北支部学術講演会
- Place of Presentation
  山形大学米沢キャンパス
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Influence of Mg-Doping on the Surface Morphology of (000-1) GaN/Sapphire Grown by Metalorganic Vapor Phase Epitaxy2013
- Author(s)
  T. Tanikawa, T. Aisaka, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
- Organizer
  10th Int. Conf. on Nitride Semicond. (ICNS-10)
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] mprovement of Surface Morphology in (000-1) GaN/Sapphire Grown by MOVPE with Indium Surfactant2013
- Author(s)
  T. Aisaka, T. Tanikawa, T. Kimura, T. Iwabuchi, K. Shojiki, R. Katayama, T. Hanada, and T. Matsuoka
- Organizer
  40th Intern. Symp. on Comp. Semcond. (ISCS2013)
- Place of Presentation
  Kobe, Japan
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Evaluation and Solution of Metastable-Phase Inclusion in MOVPE-grown －c-plane InGaN/GaN Multiple Quantum Wells2013
- Author(s)
  K. Shojiki, J. H. Choi, T. Iwabuchi, N. Usami, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, T. Matsuoka
- Organizer
  10th Int. Conf. on Nitride Semicond. (ICNS-10)
- Place of Presentation
  Washington DC, USA
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Enhancement of Surface Migration by Mg Doping in the Metalorganic Vapor Phase Epitaxy of (000-1) GaN/sapphire2013
- Author(s)
  T. Tanikawa, T. Aisaka, T. Kimura, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Improvement of surface morphology in (000-1) GaN/Sapphire grown by MOVPE with indium surfactant2013
- Author(s)
  T. Tanikawa, T. Aisaka, T. Kimura, T. Iwabuchi, K. Shojiki, R. Katayama, T. Hanada and T. Matsuoka
- Organizer
  Conference on LED and its industrial application '13 (LEDIA '13)
- Place of Presentation
  Yokohama, Japan
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Observation of Phase Separation on m-plane InGaN Films with Micro-vicinal surface by Micro-beam XRD2013
- Author(s)
  K. Shojiki, T. Hanada, J. H. Choi, Y. Imai, S. Kimura, T. Shimada, T. Tanikawa, R. Katayama and T. Matsuoka
- Organizer
  第32回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Nonlinear Optical Application of Periodic Polarity-inverted GaN Waveguide2013
- Author(s)
  R. Katayama(他8名)
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  Kyoto
- Year and Date
  2013-09-18
- Invited
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] 窒化物半導体フォトニックナノ構造の量子光学応用2013
- Author(s)
  片山竜二(他7名)
- Organizer
  第5回窒化物半導体結晶成長講演会
- Place of Presentation
  大阪
- Year and Date
  2013-07-11
- Invited
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Crystallographic Polarity Dependence of Surface Morphology Evolution during MOVPE Growth of GaN/Sapphire2013
- Author(s)
  N. Yoshinogawa and R. Katayama(他5名、6番)
- Organizer
  The 32nd Electron. Mater. Symp
- Place of Presentation
  Shiga
- Year and Date
  2013-07-11
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] サファイア基板上GaN薄膜のMOVPE成長挙動の格子極性依存性2013
- Author(s)
  吉野川伸雄，岩渕拓也，正直花奈子，木村健司，谷川智之，片山竜二，松岡隆志
- Organizer
  第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Investigation and Suppression of Metastable-phase Inclusion in MOVPE-grown –c-plane InGaN/GaN Multiple Quantum Wells2013
- Author(s)
  K. Shojiki, J. H. Choi, T. Iwabuchi1, N. Usami, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
- Organizer
  KINKEN-WAKATE 2013 10th Materials Science School for Young Scientists
- Place of Presentation
  Sendai, Japan
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] ヒロック形成にともなうm面InGaN薄膜のIn組成分布観察2013
- Author(s)
  正直花奈子，花田貴，崔正焄，島田貴章，今井康彦，木村滋，谷川智之，片山竜二，松岡隆志
- Organizer
  第74回応用物理学会学術講演会
- Place of Presentation
  社大学田辺キャンパス
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] The improvement of N-polar GaN surface during MOVPE growth with indium surfactant2013
- Author(s)
  T. Aisaka, T. Tanikawa, T. Kimura, K. Shojiki, T. Iwabuchi, T. Hanada, R. Katayama, and T. Matsuoka
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  Kyoto, Japan
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] 窒化物半導体フォトニックナノ構造の量子光学応用2013
- Author(s)
  片山竜二、黒川周斉、吉野川伸雄、谷川智之、福原裕次郎、窪谷茂幸、尾鍋研太郎、松岡隆志
- Organizer
  第5回　窒化物半導体結晶成長講演会
- Place of Presentation
  大阪大学吹田キャンパス
- Invited
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Effect of indium surfactant on MOVPE growth of N-polar GaN2013
- Author(s)
  T. Aisaka, T. Tanikawa, T. Kimura, T. Iwabuchi, K. Shojiki, R. Katayama, T. Hanada and T. Matsuoka
- Organizer
  第32回電子材料シンポジウム
- Place of Presentation
  ラフォーレ琵琶湖
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Nonlinear Optical Application of Periodic Polarity-inverted GaN Waveguide2013
- Author(s)
  R. Katayama, N. Yoshinogawa, S. Kurokawa, T. Tanikawa, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, and T. Matsuoka
- Organizer
  2013 JSAP-MRS Joint Symposia
- Place of Presentation
  Kyoto, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Enhancement of violet second harmonic generation in periodic polarity-inverted GaN waveguides2012
- Author(s)
  R. Katayama(他5名)
- Organizer
  Int. Conf. on Molecular Beam Epitaxy
- Place of Presentation
  Nara
- Year and Date
  2012-09-25
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Optical properties of the periodic polarity-inverted GaN waveguides2012
- Author(s)
  R. Katayama(他7名)
- Organizer
  SPIE Photonics WEST 2012
- Place of Presentation
  San Francisco, USA
- Year and Date
  2012-01-23
- Invited
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Linear and nonlinear optical investigations of periodic polarity- inverted GaN waveguides2012
- Author(s)
  R. Katayama(他5名)
- Organizer
  Int. Conf. on Superlattices, nanostructures, and Nanodevices
- Place of Presentation
  Dresden, Germany
- Year and Date
  2012-07-26
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Influence of Sapphire Substrate Miscut Angle on Indium Content of MOVPE-grown InGaN Films2012
- Author(s)
  K. Shojiki, H. Shindo, S. Y. Ji, V. S. Kumar, J. H. Choi, Y. H. Liu, T. Hanada, R. Katayama, and T. Matsuoka
- Organizer
  4th Intern. Symp.on Growth of III- nitrides (ISGN-4)
- Place of Presentation
  St. Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Enhanced second harmonic generation from periodic polarity-inverted GaN waveguide2012
- Author(s)
  R. Katayama, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, and T. Matsuoka
- Organizer
  Int. Conf. on Superlattices, Nanostructures, and Nanodevices (ICSNN2012)
- Place of Presentation
  Dresden, Germany
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Enhancement of violet second harmonic generation in periodic polarity-inverted GaN waveguides2012
- Author(s)
  R. Katayama, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe and T. Matsuoka
- Organizer
  17th Int. Conf. Molecular Beam Epitaxy
- Place of Presentation
  Nara, Japan
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] 極性ワイドギャップ半導体フォトニックナノ構造の新規光機能2012
- Author(s)
  片山竜二(他5名)
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京
- Year and Date
  2012-03-15
- Invited
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] 窒素δドープGaAs中の単一等電子トラップからの発光のフォトルミネッセンス励起分光測定2012
- Author(s)
  高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学(愛媛県)
- Year and Date
  2012-09-12
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Biexciton Emission from Single Isoelectronic Traps Formed by Nitrogen-Nitrogen Pairs in GaAs2012
- Author(s)
  K. Takamiya, T. Fukushima. S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe. R. Katayama, and H. Yaguchi
- Organizer
  31st International Conference on the Physics of Semiconductors
- Place of Presentation
  スイス連邦工科大学チューリッヒ校(スイス)
- Year and Date
  2012-08-02
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Linear and nonlinear optical investigations of periodic polarity- inverted GaN waveguides2012
- Author(s)
  R. Katayama(他5名)
- Organizer
  4th Intern. Symp. on Growth of III-nitrides
- Place of Presentation
  St. Petersburg, Russia
- Year and Date
  2012-07-19
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Growth of Cubic AlN Films on MgO substrates by MBE2012
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya,R. Katayama, H. Yaguchi, K. Onabe,
- Organizer
  GCOE International Sympsium on Physical Sciences Frontier
- Place of Presentation
  東京
- Year and Date
  2012-12-09
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation]2012
- Author(s)
  角田雅弘,森川生,窪谷茂幸,片山竜二,尾鍋研太郎
- Organizer
  第4回窒化物半導体結晶成長講演会
- Place of Presentation
  東京大学(東京)
- Year and Date
  2012-04-27
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Comparison of crystalline quality in InGaN grown on (0001) and (0001) GaN/Sapphire by metal-organic vapor phase epitaxy2012
- Author(s)
  T. Tanikawa, R. Katayama and T. Matsuoka
- Organizer
  Int. Workshop on Nitride Semiconductors (IWN2012)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] MOVPE成長(0001) GaNのステップフロー成長の促進2012
- Author(s)
  逢坂崇，正直花奈子，岩渕拓也，木村健司，谷川智之，花田貴，片山竜二，松岡隆志
- Organizer
  第67回応用物理学会東北支部学術講演会
- Place of Presentation
  東北大学
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Linear and nonlinear optical investigations of periodic polarity-inverted GaN waveguides2012
- Author(s)
  R. Katayama, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, and T. Matsuoka
- Organizer
  4th Intern. Symp.on Growth of III- nitrides (ISGN-4)
- Place of Presentation
  St. Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Violet-colored enhanced second harmonic generation from periodic polarity- inverted GaN waveguide2012
- Author(s)
  R. Katayama, S. Kurokawa, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, T. Tanikawa, T. Hanada and T.Matsuoka
- Organizer
  The 31st Electronic Materials Symposium (EMS-31)
- Place of Presentation
  Shuzenji, Japan
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] (0001)および(000-1)面GaN上へMOVPE成長したInGaNの結晶品質比較2012
- Author(s)
  谷川智之，片山竜二，松岡隆志
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] マイクロファセットができたm面InGaN薄膜のIn濃度分布観察2012
- Author(s)
  花田貴，崔正焄，正直花奈子，今井康彦，木村滋，島田貴章，片山竜二，松岡隆志
- Organizer
  プレIWN2012
- Place of Presentation
  東京大学
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Optical properties of the periodic polarity-inverted GaN waveguides2012
- Author(s)
  Ryuji Katayama, Yujiro Fukuhara, Masahiro Kakuda, Shigeyuki Kuboya, Kentaro Onabe, Syusai Kurokawa, Naoto Fujii, Takashi Matsuoka
- Organizer
  SPIE Photonics WEST 2012
- Place of Presentation
  米国・サンフランシスコ(招待講演)
- Year and Date
  2012-01-23
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] サファイア基板上GaN薄膜の有機金属気相成長初期過程における表面モフォロジーの格子極性依存性2012
- Author(s)
  吉野川伸雄，岩渕拓也，正直花奈子，木村健司，谷川智之，片山竜二，松岡隆志
- Organizer
  第67回応用物理学会東北支部学術講演会
- Place of Presentation
  東北大学
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] 窒素δドープGaAsにおける単一等電子トラップからの励起子分子発光2012
- Author(s)
  高宮健吾, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] (0001)面、(000-1)面GaN上へMOVPE成長したInGaNの表面モフォロジーとIn取り込み2012
- Author(s)
  谷川智之，正直花奈子，崔正焄，片山竜二，松岡隆志
- Organizer
  第67回応用物理学会東北支部学術講演会
- Place of Presentation
  東北大学
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] MOVPE成長N極性InGaNにおけるIn組成のc面サファイア基板微傾斜角依存性2012
- Author(s)
  正直花奈子，崔正焄，進藤裕文，木村健司，谷川智之，花田貴，片山竜ニ，松岡隆志
- Organizer
  第67回応用物理学会東北支部学術講演会
- Place of Presentation
  東北大学
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Influence of sapphire substrate miscut angle on Indium content of MOVPE-grown InGaN films2012
- Author(s)
  K. Shojiki, J. H. Choi, H. Shindo, S. Y. Ji, V. S. Kumar, Y. H. Liu, T. Hanada, R. Katayama and T. Matsuoka
- Organizer
  The 31st Electronic Materials Symposium (EMS-31)
- Place of Presentation
  Shuzenji, Japan
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Violet-colored enhanced second harmonic generation from periodic polarity-inverted GaN waveguide2012
- Author(s)
  R. Katayama(他8名)
- Organizer
  The 31st Electron. Mater. Symp
- Place of Presentation
  Shizuoka
- Year and Date
  2012-07-13
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Violet second harmonic generation from polarity inverted GaN waveguides2012
- Author(s)
  R. Katayama, S. Kurokawa, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, T. Tanikawa, T. Hanada and T. Matsuoka
- Organizer
  Int. Workshop on Nitride Semiconductors (IWN2012)
- Place of Presentation
  Sapporo, Japan
- Invited
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Violet second harmonic generation from polarity inverted GaN waveguides2012
- Author(s)
  R. Katayama(他8名)
- Organizer
  Int. Workshop on Nitride Semiconductors
- Place of Presentation
  Sapporo
- Year and Date
  2012-10-18
- Invited
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] 極性ワイドギャップ半導体フォトニックナノ構造の新規光機能2012
- Author(s)
  片山竜二, 松岡隆志, 福原裕次郎, 角田雅弘, 窪谷茂幸, 尾鍋研太郎
- Organizer
  第59回応用物理学関係連合講演会
- Place of Presentation
  東京・早稲田(招待講演)
- Year and Date
  2012-03-15
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Enhancement of In-incorporation into InGaN by nitridation of sapphire substrate in MOVPE2012
- Author(s)
  J. H. Choi, S. Kumar, K. Shojiki, T. Hanada, R. Katayama andT. Matsuoka
- Organizer
  4th Intern. Symp.on Growth of III- nitrides (ISGN-4)
- Place of Presentation
  St. Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates2012
- Author(s)
  R. G. Jin, S. Yagi, Y. Hijikata, S. Kuboya, K. Onabe, R. Katayama and H. Yaguchi
- Organizer
  17th International Conference on Molecular Beam Epitaxy
- Place of Presentation
  奈良県新公会堂(奈良県)
- Year and Date
  2012-09-24
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] Growth of cubic AlN films on MgO substrate via2-step cubic GaN buffer layer by RF-MBE2012
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya,R. Katayama, K. Onabe
- Organizer
  31th Electronic Materials Symposium (EMS-31)
- Place of Presentation
  伊豆(静岡)
- Year and Date
  2012-07-11
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] MBE法によるGaAs(001)基板上へのErGaAs混晶の成長2012
- Author(s)
  金日国, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学(愛媛県)
- Year and Date
  2012-09-12
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] RF-MBEGrowth of cubic AlN on MgO(001) substrates via 2-step c-GaN buffer layer2012
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya, R. Katayama, K. Onabe
- Organizer
  17th International Conference on Molecular Beam Epitaxy (MBE2012)
- Place of Presentation
  奈良(奈良)
- Year and Date
  2012-09-24
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Study of In-composition of InGaN islands on m-plane GaN substrate using high-resolution microbeam XRD2012
- Author(s)
  J.H. Choi, K. Shojiki, T. Shimada, T. Tanikawa, T. Hanada, R. Katayama, T. Matsuoka, Y. Imai and S. Kimura
- Organizer
  Int. Workshop on Nitride Semiconductors (IWN2012)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-23686010
[Presentation] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2011
- Author(s)
  K.Takamiya, Y.Endo, T.Fukushima, S.Yagi, Y.Hijikata, T.Mochizuki, M.Yoshita, H.Akiyama, S.Kuboya, K.Onabe, R.Katayama, H.Yaguchi
- Organizer
  7th International Conference on Processing & Manufacturing of Advanced Materials
- Place of Presentation
  Quebec City Convention Centre (Quebec, Canada)(招待講演)
- Year and Date
  2011-08-03
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Biexciton Emission from Single Isoelectronic Traps in Nitrogen Atomic-Layey-Doped GaAs2011
- Author(s)
  K.Takamiya, T.Fukushima, S.Yagi, Y.Hijikata, T.Mochizuki, M.Yoshita, H.Akiyama, S.Kuboya, K.Onabe, R.Katayama, H.Yaguchi
- Organizer
  3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  International Academy Traunkirchen (Traunkirchen, Austria)
- Year and Date
  2011-09-12
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] GaAs(110)基板上に作製した窒素δドープGaAsにおける等電子トラップからの発光特性評価2011
- Author(s)
  高宮健吾, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学(神奈川県)
- Year and Date
  2011-03-25
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2011
- Author(s)
  K. Takamiya, Y. Endo, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H.Yaguchi
- Organizer
  The 7th International Conference on Processing & Manufacturing of Advanced Materials
- Place of Presentation
  Quebec City Convention Centre (Quebec,Canada)
- Year and Date
  2011-08-03
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Biexciton Emission from Single Is oelectronic Traps in Nitrogen Atomic-Layey-Doped GaAs2011
- Author(s)
  K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H. Yaguchi
- Organizer
  The 3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  International Academy Traunkirchen (Traunkirchen, Austria)
- Year and Date
  2011-09-12
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Cubic III-nitrides: potential photonic materials (Invited)2011
- Author(s)
  K. Onabe, S.Sanorpim, H. Kato, M.Kakuda, T. Nakamura, K. Nakamura, S.Kuboya, R. Katayama
- Organizer
  SPIE Photonic West 2011
- Place of Presentation
  San Francisco, CA,USA.
- Year and Date
  2011-01-24
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 窒素δドープGaAs(110)中の単一等電子トラップからの発光の偏光特性2011
- Author(s)
  高宮健吾, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形県)
- Year and Date
  2011-08-30
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Cubic III-nitrides : potential photonic materials2011
- Author(s)
  K.Onabe, S.Sanorpim, H.Kato, M.Kakuda, T.Nakamura, K.Nakamura, S.Kuboya, R.Katayama
- Organizer
  SPIE Photonic West 2011
- Place of Presentation
  San Francisco, CA, USA(Invited)
- Year and Date
  2011-01-24
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光特性評価2010
- Author(s)
  高宮健吾, 遠藤雄太, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, サノーピンサクンタム, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] RF-MBE法によるYSZ(001)基板上立方晶InN及びInGaNの結晶成長2010
- Author(s)
  中村桂土、角田雅弘、石田崇、窪谷茂幸、片山竜二、尾鍋研太郎
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] 極低窒素濃度GaAsNのフォトリフレクタンススペクトル2010
- Author(s)
  大久保航, 石川輝, 八木修平, 土方泰斗, 吉田貞史, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光特性評価2010
- Author(s)
  高宮健吾, 遠藤雄太, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, サノーピンサクンタム, 矢口裕之, サノーピンサクンタム, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 窒素δドープGaAs中の等電子トラップを形成する窒素原子対配列に関する研究2010
- Author(s)
  星野真也, 遠藤雄太, 福島俊之, 高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] RF-MBE法によるYSZ(001)基板上立方晶InN及びInGaNの結晶成長2010
- Author(s)
  中村桂土, 角田雅弘, 石田崇, 窪谷茂幸, 片山竜二, 尾鍋研太郎
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学 (神奈川)
- Year and Date
  2010-03-17
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] 様々な面方位基板上に作製した窒素δドープGaAs中の等電子トラップからの発光(III)2010
- Author(s)
  福島俊之, 高宮健吾, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
- Organizer
  第57回応用物理学関係連合講演会
- Place of Presentation
  東海大学(神奈川県)
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 極低窒素濃度GaAsNにおける窒素ペアからの発光の窒素濃度依存性2010
- Author(s)
  石川輝, 八木修平, 土方泰斗, 吉田貞史, 岡野真人, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎県)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] 極低窒素濃度GaAsN中の等電子トラップからの発光に対する一軸応力の影響2010
- Author(s)
  新井佑也, 遠藤雄太, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Photoluminescence from single is oelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A2009
- Author(s)
  T. Fukushima, M. Ito, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Okano, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe
- Organizer
  The 14th International Conference on Modulated Semiconductor Structures
- Place of Presentation
  神戸国際会議場 (兵庫県)
- Year and Date
  2009-07-21
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009
- Author(s)
  Q. T. Thieu, T. Nakagawa, Y. Seki, S. Kuboya, R. Katayama, K. Onabe
- Organizer
  8th International Conference on Nitride Semiconductors (ICNS-8)
- Place of Presentation
  Jeju, Korea.
- Year and Date
  2009-10-20
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE Growth of InN Films Using 1,1-dimethylhydrazine as a Nitrogen Precursor(Invited)2009
- Author(s)
  ティユクァントウ、中川隆、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
- Organizer
  Asia-Pacific Workshop on Widegap Semiconductors(APWS2009)
- Place of Presentation
  Zhang Jia Jie, Hunan, China
- Year and Date
  2009-05-25
- Data Source
  KAKENHI-PUBLICLY-21016003
[Presentation] Movpe Growth and Optical Characterization of InGaAsN T-shaped Quantum Wires Lattice-Matched to GaAs2009
- Author(s)
  P.Klangtakail, S.Sanorpim, R.Katayama, K.Onabe
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-20
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE Growth of High Optical Quality InGaPN Layers on GaAs (001) Substrates2009
- Author(s)
  D. Kaewket, S. Sanorpim, S. Tungasmita, R. Katayama, K. Onabe
- Organizer
  8th International Conference on Nitride Semiconductors (ICNS-8)
- Place of Presentation
  Jeju, Korea.
- Year and Date
  2009-10-22
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長(3)2009
- Author(s)
  ティユクァントウ、中川隆、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
- Organizer
  2009年秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009
- Author(s)
  Q.T.Thieu, T.Nakagawa, Y.Seki, S.Kuboya, R.Katayama, K.Onabe
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  Biwako, Japan
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光2009
- Author(s)
  高宮健吾, 遠藤雄太, 福島俊之, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山県・富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] Movpe Growth and Optical Characterization of InGaAsN T-shaped Quantum Wires Lattice-Matched to GaAs2009
- Author(s)
  P. Klangtakai, S. Sanorpim, R. Katayama, K. Onabe
- Organizer
  8th International Conference on Nitride Semiconductors (ICNS-8)
- Place of Presentation
  Jeju, Korea.
- Year and Date
  2009-10-20
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] InP(001)板上へのInPN薄膜のMOVPE成長2009
- Author(s)
  関裕紀,窪谷茂幸,ティユクァントゥ,片山竜二,矢口裕之,尾鍋研太郎
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE Growth of High Optical Quality InGaPN Layers on GaAs(001)Substrates2009
- Author(s)
  D.Kaewket, S.Sanorpim, S.Tungasmita, R.Katayama, K.Onabe
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-22
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009
- Author(s)
  ティユクァントウ、中川隆、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-20
- Data Source
  KAKENHI-PUBLICLY-21016003
[Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009
- Author(s)
  Q. T. Thieu, T. Nakagawa, Y. Seki, S. Kuboya, R. Katayama, K. Onabe
- Organizer
  28th Electronic Materials Symposium (EMS28)
- Place of Presentation
  Biwako, Japan.
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] 様々な面方位基板上に作製した窒素δドープGaAs中の等電子トラップからの発光(III)2009
- Author(s)
  福島俊之, 高宮健吾, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山県・富山大学
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長(3)2009
- Author(s)
  ティユクァントウ、中川隆、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
- Organizer
  2009年秋季第70回応用物理学会学術講演会
- Place of Presentation
  富山大学
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PUBLICLY-21016003
[Presentation] Photoluminescence from single isoelectronic traps in nitrogen delta-dopedGaAs grown on GaAs(111)A2009
- Author(s)
  福島俊之, M.Ito, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, S.Kuboys, 片山竜二, 尾鍋研太郎
- Organizer
  The 14th International Conference on Modulated Semiconductor Structures
- Place of Presentation
  兵庫県・神戸国際会議場
- Year and Date
  2009-07-21
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009
- Author(s)
  Q.T.Thieu, T.Nakagawa, Y.Seki, S.Kuboya, R.Katayama, K.Onabe
- Organizer
  8th International Conference on Nitride Semiconductors(ICNS-8)
- Place of Presentation
  Jeju, Korea
- Year and Date
  2009-10-20
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] InP(001)基板上へのInPN薄膜のMOVPE成長2009
- Author(s)
  関裕紀, 窪谷茂幸, ティユクァントゥ, 片山竜二, 矢口裕之, 尾鍋研太郎
- Organizer
  第56回応用物理学関係連合講演会
- Place of Presentation
  筑波大学 (茨城)
- Year and Date
  2009-03-31
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009
- Author(s)
  ティユクァントウ、中川隆、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
- Organizer
  28th Electronic Materials Symposium(EMS28)
- Place of Presentation
  Biwako, Japan
- Year and Date
  2009-07-08
- Data Source
  KAKENHI-PUBLICLY-21016003
[Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長 (3)2009
- Author(s)
  テイユクァントウ, 中川隆, 関裕紀, 窪谷茂幸, 片山竜二, 尾鍋研太郎
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学 (富山)
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] 極低窒素濃度GaAsNのフォトルミネッセンス励起分光測定2009
- Author(s)
  石川輝, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山大学(富山県)
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-21360004
[Presentation] ラマン分光を用いたGaInAsN混晶の発光効率の変化に関する研究2008
- Author(s)
  谷岡健太郎, 堀口歩, 土方泰斗, 矢口裕之, 吉田貞史, 片山竜二, 尾鍋研太郎, 吉田正裕, 秋山英文
- Organizer
  2008年春季第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学(千葉)
- Year and Date
  2008-03-29
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長(2)2008
- Author(s)
  ティュクァントウ、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部工業大学
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-19032002
[Presentation] InAsN薄膜の光学的特性2008
- Author(s)
  窪谷茂幸,黒田正行,西尾晋,ティユクァントゥ,片山竜二,尾鍋研太郎
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部工業大学
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] Composition pulling effect in MOVPE growth of InGaAsN films on bulk InGaAs substrate2008
- Author(s)
  S. Sanorpim, R. Katayama, S. Kuboya, K. Onabe
- Organizer
  14th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE・XIV)
- Place of Presentation
  Metz, France
- Year and Date
  2008-06-04
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] InAsN薄膜の光学的特性2008
- Author(s)
  窪谷茂幸, 黒田正行, 西尾晋, ティユクァントゥ, 片山竜二, 尾鍋研太郎
- Organizer
  第69回応用物理学会学術講演会
- Place of Presentation
  中部工業大学 (愛知)
- Year and Date
  2008-09-03
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] Compositional pulling effect in MOVPE growth of InGaAsN films on bulk InGaAs substrate2008
- Author(s)
  S. Sanorpim, R. Katayama, S. Kuboya, K. Onabe
- Organizer
  14th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIV)
- Place of Presentation
  Metz, France
- Year and Date
  2008-06-04
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] ラマン分光を用いたGaInAsN混晶の発光効率の変化に関する研究2008
- Author(s)
  谷岡健太郎, 堀口歩, 土方泰斗, 矢口裕之, 吉田貞史, 片山竜二, 尾鍋研太郎, 吉田正裕, 秋山英文
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学 (千葉)
- Year and Date
  2008-03-29
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE growth of InN films avoiding parasitic reactions of precursors, trimethylindium and 1, 1-dimethylhydrazine2008
- Author(s)
  Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
- Organizer
  International Workshop on Nitiride Semiconductors (IWN 2008)
- Place of Presentation
  Montreux, Switzerland
- Year and Date
  2008-10-06
- Data Source
  KAKENHI-PROJECT-19032002
[Presentation] MOVPE growth of InN films using 1,1-dimethylhydrazine as the nitrogen source2008
- Author(s)
  Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
- Organizer
  14th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIV)
- Place of Presentation
  Metz, France
- Year and Date
  2008-06-03
- Data Source
  KAKENHI-PROJECT-19032002
[Presentation] InAsN quantum dots grown by MOVPE2008
- Author(s)
  S. Kuboya, Q. T. Thieu, S. Takahashi, F. Nakajima, R. Katayama, K. Onabe
- Organizer
  Workshop on Frontier Optoelectronic Materials and Devices
- Place of Presentation
  箱根(神奈川)
- Year and Date
  2008-03-05
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE growth of InN films using TMIn and DMHy as the precursors2008
- Author(s)
  Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
- Organizer
  28th Electronic Materials Symposium (EMS28)
- Place of Presentation
  Shuzenji, Japan
- Year and Date
  2008-07-10
- Data Source
  KAKENHI-PROJECT-19032002
[Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長2008
- Author(s)
  ティユクァントウ、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
- Organizer
  2008年春季第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学(千葉)
- Year and Date
  2008-03-27
- Data Source
  KAKENHI-PROJECT-19032002
[Presentation] MOVPE growth of InN films using 1,1-dimethylhydrazine as a nitrogen precursor2008
- Author(s)
  Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
- Organizer
  Second International Symposium on Growth of III-Nitrides
- Place of Presentation
  修善寺(静岡)
- Year and Date
  2008-07-07
- Data Source
  KAKENHI-PROJECT-19032002
[Presentation] MOVPE Growth of InN films Using 1, 1-Dimethylhydrazine as a Nitrogen Precursor2008
- Author(s)
  Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
- Organizer
  2nd International Symposium on Growth of HI-Nitride (ISGN-2)
- Place of Presentation
  Shuzenji, Japan
- Year and Date
  2008-07-07
- Data Source
  KAKENHI-PROJECT-19032002
[Presentation] GaAsN及びInAsN薄膜の水素・窒素混合キャリアガスを用いたMOVPE成長2008
- Author(s)
  窪谷茂幸, 加藤宏盟, ティユクァントゥ, 片山竜二, 尾鍋研太郎
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  日本大学 (千葉)
- Year and Date
  2008-03-29
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE growth of GaAsN and InAsN films by using N2 carrier gas2008
- Author(s)
  S. Kuboya, H. Kato, Q. T. Thieu, R. Katayama and K. Onabe
- Organizer
  28th Electronic Materials Symposium (EMS28)
- Place of Presentation
  Shuzenji, Japan
- Year and Date
  2008-07-10
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE growth of InN films using TMIn and DMHy as the precursors2008
- Author(s)
  Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
- Organizer
  27th Electronic Materials Symposium (EMS-27)
- Place of Presentation
  修善寺(静岡)
- Year and Date
  2008-07-10
- Data Source
  KAKENHI-PROJECT-19032002
[Presentation] MOVPE growth properties of high quality InAsN films2008
- Author(s)
  S. Kuboya, Q. T. Thieu, H. Kato, F. Nakajima, R. Katayama, K. Onabe
- Organizer
  14th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIV)
- Place of Presentation
  Metz, France.
- Year and Date
  2008-06-04
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE growth of InN films using 1, 1-dimethylhydrazine as the nitrogen source2008
- Author(s)
  Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
- Organizer
  14th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIV)
- Place of Presentation
  Metz, France
- Year and Date
  2008-06-03
- Data Source
  KAKENHI-PROJECT-19032002
[Presentation] MOVPE growth of GaAsN and InAsN films by using N_2 carrier gas2008
- Author(s)
  S. Kuboya, H. Kato, Q. T. Thieu, R. Katayama, K. Onabe
- Organizer
  27th Electronic Materials Symposium (EMS-27)
- Place of Presentation
  修善寺(静岡)
- Year and Date
  2008-07-10
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE growth properties of high quahty InAsN films2008
- Author(s)
  S. Kuboya, Q. T. Thieu, H. Kato, F. Nakajhna, R. Katayama, K. Onabe
- Organizer
  14th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE・XIV)
- Place of Presentation
  Metz, France
- Year and Date
  2008-06-04
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] Photoluminescence properties of InAsN QDs grown by MOVPE2007
- Author(s)
  S. Kuboya, Q. T. Thieu, S. Takahashi, F. Nakajima, R. Katayama, K. Onabe
- Organizer
  26th Electronic Materials Symposium (EMS-26)
- Place of Presentation
  琵琶湖 (滋賀)
- Year and Date
  2007-07-04
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] MOVPE growth and photoluminescence properties of InAsN quantum dots2007
- Author(s)
  S. Kuboya, S. Takahashi, Q. T. Thieu, F. Nakajima, R. Katayama, K. Onabe
- Organizer
  7th International Conference on Nitride Semiconductors (ICNS-7)
- Place of Presentation
  Las Vegas, USA.
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] 光照射によるGaInAsN混晶の発光効率向上に関する研究2007
- Author(s)
  谷岡健太郎, 遠藤雄太, 伊藤正俊, 土方泰斗, 矢口裕之, 吉田貞史, 片山竜二, 尾鍋研太郎, 吉田正裕, 秋山英文
- Organizer
  2007年秋季第68回応用物理学学術講演会
- Place of Presentation
  北海道工業大学 (北海道)
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] 光照射によるGaInAsN混晶の発光効率向上に関する研究2007
- Author(s)
  谷岡健太郎, 遠藤雄太, 伊藤正俊, 土方泰斗, 矢口裕之, 吉田貞史, 片山竜二, 尾鍋研太郎, 吉田正裕, 秋山英文
- Organizer
  2007年秋季第68回応用物理学学術講演会
- Place of Presentation
  北海道工業大学(北海道)
- Year and Date
  2007-09-07
- Data Source
  KAKENHI-PROJECT-19360003
[Presentation] Polarity control of MOVPE-grown GaN on AlN/GaN templates
- Author(s)
  J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama and T. Matsuoka
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第7回窒化物半導体結晶成長講演会
- Place of Presentation
  東北大学片平さくらホール（宮城県仙台市）
- Year and Date
  2015-05-07 – 2015-05-08
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] Investigation of Modal Dispersion in Nonlinear Optical TiOx/GaN Waveguide by m-line Spectroscopy
- Author(s)
  N. Yoshinogawa, R. Katayama, K. Shojiki, T. Tanikawa, S. Kuboya and T. Matsuoka
- Organizer
  The 33rd Electronic Materials Symposium
- Place of Presentation
  La-Foret Shuzenji, Shizuoka, Japan
- Year and Date
  2014-07-09 – 2014-07-11
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] Growth of Cubic AlN Films on MgO substrates by MBE
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya, R. Katayama, H. Yaguchi, K. Onabe
- Organizer
  GCOE International Sympsium on Physical Sciences Frontier
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Growth of cubic AlN films on MgO substrate via 2-step cubic GaN buffer layer by RF-MBE
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya, R. Katayama, K. Onabe
- Organizer
  31th Electronic Materials Symposium (EMS-31)
- Place of Presentation
  Izu, Japan
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 立方晶AlNおよび高Al濃度立方晶AlGaNのRF-MBE成長
- Author(s)
  角田雅弘、森川生、窪谷茂幸、片山竜二、矢口裕之、尾鍋研太郎
- Organizer
  2013年第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学（厚木市）
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] 窒素δドープGaAs中の単一等電子トラップによる励起子分子発光の時間分解フォトルミネッセンス測定
- Author(s)
  高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学（京都府）
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] MOVPE Growth of GaN onto PLD-Grown AlN Interlayer on GaN Templates
- Author(s)
  J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama and T. Matsuoka
- Organizer
  The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA ’15)
- Place of Presentation
  Pacifico Yokohama, Kanagawa, Japan
- Year and Date
  2015-04-22 – 2015-04-23
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] RF-MBE Growth of cubic AlN on MgO(001) substrates via 2-step c-GaN buffer layer
- Author(s)
  M. Kakuda, S. Morikawa, S. Kuboya, R. Katayama, K. Onabe
- Organizer
  17th International Conference on Molecular Beam Epitaxy (MBE2012)
- Place of Presentation
  Nara, Japan
- Data Source
  KAKENHI-PROJECT-22360005
[Presentation] Excitation power dependence of the emission from various N-N pairs in N δ-doped GaAs
- Author(s)
  K. Takamiya, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe, and H. Yaguchi
- Organizer
  4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
- Place of Presentation
  UCLAコンファレンス・センター（アメリカ合衆国）
- Data Source
  KAKENHI-PROJECT-24360004
[Presentation] 横型擬似位相整合AlN導波路を用いた深紫外第二高調波発生素子の設計
- Author(s)
  三谷悠貴, 片山竜二, 劉陳燁, 正直花奈子, 谷川智之, 窪谷茂幸, 松岡隆志
- Organizer
  日本結晶成長学会ナノ構造・エピタキシャル成長分科会第7回窒化物半導体結晶成長講演会
- Place of Presentation
  東北大学片平さくらホール（宮城県仙台市）
- Year and Date
  2015-05-07 – 2015-05-08
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] Accurate Determination of Modal Dispersion in Nonlinear Optical TiOx/GaN Waveguide by Spectroscopic m-line Technique
- Author(s)
  R. Katayama, N. Yoshinogawa, K. Shojiki, T. Tanikawa, S. Kuboya and T. Matsuoka
- Organizer
  International Workshop on Nitride Semiconductors (IWN2014)
- Place of Presentation
  Wrocław Congress Center, Wroclaw, Poland
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] Design of the Transverse Quasi-Phase Matched AlN Waveguides for Deep-UV Second Harmonic Generation
- Author(s)
  Y. Mitani, R. Katayama, J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya and T. Matsuoka
- Organizer
  The 34th Electronic Materials Symposium
- Place of Presentation
  La-Foret Biwako, Shiga, Japan
- Year and Date
  2015-07-15 – 2015-07-17
- Data Source
  KAKENHI-PROJECT-26600082
[Presentation] RF-MBE法による立方晶AlNの結晶成長
- Author(s)
  角田雅弘、森川生、窪谷茂幸、片山竜二、尾鍋研太郎
- Organizer
  第4回窒化物半導体結晶成長講演会
- Place of Presentation
  東京大学（東京都目黒区）
- Data Source
  KAKENHI-PROJECT-22360005

1. ONABE Kentaro (50204227)

# of Collaborated Projects: 8 results

# of Collaborated Products: 107 results
2. YAGUCHI Hiroyuki (50239737)

# of Collaborated Projects: 5 results

# of Collaborated Products: 44 results
3. KUBOYA Shigeyuki (70583615)

# of Collaborated Projects: 4 results

# of Collaborated Products: 60 results
4. 上向井正裕 (80362672)

# of Collaborated Projects: 4 results

# of Collaborated Products: 36 results
5. HIJIKATA Yasuto (70322021)

# of Collaborated Projects: 2 results

# of Collaborated Products: 32 results
6. YAGI Shuhei (30421415)

# of Collaborated Projects: 2 results

# of Collaborated Products: 23 results
7. AKIYAMA Hidefumi (40251491)

# of Collaborated Projects: 2 results

# of Collaborated Products: 28 results
8. KOH Shinji (50323663)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
9. SHIRAKI Yasuhiro (00206286)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
10. 谷川智之 (90633537)

# of Collaborated Projects: 2 results

# of Collaborated Products: 2 results
11. 呉軍 (80313005)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
12. YAMAMOTO Takahisa (20220478)

# of Collaborated Projects: 1 results

# of Collaborated Products: 2 results
13. 横山弘之 (60344727)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
14. 宇佐美徳隆 (20262107)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. 宮嶋孝夫 (50734836)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. 岩谷素顕 (40367735)

# of Collaborated Projects: 1 results

# of Collaborated Products: 7 results
17. 川原村敏幸 (00512021)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. SAKUNTAM Sanorpim

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
19. 松岡隆志

# of Collaborated Projects: 0 results

# of Collaborated Products: 7 results
20. 花田貴

# of Collaborated Projects: 0 results

# of Collaborated Products: 6 results
21. 寒川誠二

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
22. 村山明宏

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results
23. 三宅秀人

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

Katayama Ryuji 片山 竜二

KATAYAMA Ryuji 片山 竜二

Research Projects

Research Products

Co-Researchers

Exploration of Fabrication Technology, Design of Physical Property and Functionality of Polarity-Controlled Nitride Semiconductor Singular StructurePrincipal InvestigatorOngoing

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

スクイーズド光発生用半導体レーザ励起窒化物半導体導波路型非線形光学デバイスの開発Ongoing

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of High-Throughput Micro-LED Fabrication Process Utilizing Crystallographic Orientation Modulated TemplatesPrincipal InvestigatorOngoing

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Nonlinear Optical Device Application of Polarity-Controlled Nitride Semiconductor Singular StructurePrincipal InvestigatorOngoing

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Development of Quantum Computing System Based on Ferroelectric/Paraelectric Stacked WaveguidesPrincipal InvestigatorOngoing

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of monolithic cavity wavelength converter made of widegap semiconductorsPrincipal InvestigatorOngoing

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of Compact Deep-UV Laser Based on Wavelength Converter Integrated with Blue Laser Light SourcesPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Research on quantum optical application of novel polar widegap semiconductorsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Principal Investigator

Project Period (FY)

Katayama Ryuji 片山竜二

KATAYAMA Ryuji 片山竜二