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Katayama Ryuji  片山 竜二

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KATAYAMA Ryuji  片山 竜二

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Researcher Number 40343115
Affiliation (Current) 2019: 大阪大学, 工学研究科, 教授
Affiliation (based on the past Project Information) *help 2016 – 2019: 大阪大学, 工学研究科, 教授
2009 – 2015: 東北大学, 金属材料研究所, 准教授
2007 – 2008: 東京大学, 大学院・新領域創成科学研究科, 助教
2002 – 2005: The University of Tokyo, Graduate School of Frontier Sciences, Research Associate, 大学院・新領域創成科学研究科, 助手
Review Section/Research Field
Principal Investigator
Applied optics/Quantum optical engineering / Science and Engineering / Crystal engineering / Optical engineering, Photon science / Applied physics and engineering and related fields / Medium-sized Section 30:Applied physics and engineering and related fields
Except Principal Investigator
Applied materials science/Crystal engineering / Science and Engineering / Applied materials science/Crystal engineering / Basic Section 30020:Optical engineering and photon science-related
Keywords
Principal Investigator
非線形光学 / 窒化物半導体 / 第二高調波発生 / GaN / 量子光学 / 反応性スパッタリング / パルスレーザ堆積 / 光導波路 / エピタキシャル成長 / 光パラメトリック下方変換 … More / Ga極性 / N極性 / RF-MBE法 / 低温窒化 / AlN緩衝層 / 格子極性反転構造 / ケルビンフォース顕微鏡 / KOHエッチング / RF-MBE / 窒化ガリウム / 酸化チタン / 分子線エピタキシー / 有機金属気相成長 / スパッタリング / 擬似位相整合 / 周期的極性反転 / 窒化アルミニウム / 酸化ジルコニウム / パルスレーザー堆積 / ウエハ接合 / 強誘電体 / 量子計算 / ワイドギャップ半導体 / 波長変換素子 / モノリシック集積 / モノリシック共振器 / μLED / 結晶面方位 / MOVPE / パルススパッタ … More
Except Principal Investigator
MOVPE / 窒化物半導体 / エピタキシャル成長 / RF-MBE / InGaAsN / 半導体物性 / GaAsN / 有機金属気相成長 / エピタキシャル / ジメチルヒドラジン / 結晶工学 / 結晶成長 / 光物性 / 単一光子 / 応用光学・量子光工学 / MBE、エピタキシャル / 立方晶窒化物半導体 / MBE / InGaPN / InN / 成長 / アダクト / 分離供給法 / 希薄窒化物半導体 / III-V-N混晶 / 量子ナノ構造 / 量子ドット / 自己形成量子ドット / 希薄窒化物 / 窒化インジウム / 応用光学・量子光工学MBE / MBE,エピタキシャル / 立方晶III-N半導体 / III-N半導体 / 立方晶III族窒化物 / III族窒化物半導体 / 半導体 / 量子光学 / 量子もつれ光子対 / 応用光学・量子光光学 / 励起子分子 / 原子層ドーピング / 等電子トラップ / III-V-N型窒化物混晶 / 混晶半導体 / 巨大バンドギャップボウイング / InAsN / 巨大バンドギャッブボウイング / GaNP / GaNAs / 巨大ボウイング / diluted nitride alloy / slloy semiconductors / huge bandgap bowing / 立方晶窒化ガリウム / 立方晶窒化インジウム / フォトリフレクタンス / ヘテロ構造 / 窒化物混晶半導体 / 立方晶GaN / 立方晶AlGaN / GaN / GaAs / 選択成長 / 立法晶GaN / 立法晶AlGaN / 深い準位 / nitride semiconductors / cubic nitride semiconductors / cubic gallium nitride / cubic indium nitride / photoreflectance / heterostructure / 半導体レーザ / 非線形光学デバイス / 量子情報処理 Less
  • Research Projects

    (17 results)
  • Research Products

    (277 results)
  • Co-Researchers

    (23 People)
  •  Exploration of Fabrication Technology, Design of Physical Property and Functionality of Polarity-Controlled Nitride Semiconductor Singular StructurePrincipal InvestigatorOngoing

    • Principal Investigator
      片山 竜二
    • Project Period (FY)
      2019 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      Osaka University
  •  スクイーズド光発生用半導体レーザ励起窒化物半導体導波路型非線形光学デバイスの開発Ongoing

    • Principal Investigator
      上向井 正裕
    • Project Period (FY)
      2019 – 2022
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 30020:Optical engineering and photon science-related
    • Research Institution
      Osaka University
  •  Development of High-Throughput Micro-LED Fabrication Process Utilizing Crystallographic Orientation Modulated TemplatesPrincipal InvestigatorOngoing

    • Principal Investigator
      片山 竜二
    • Project Period (FY)
      2019 – 2020
    • Research Category
      Challenging Research (Exploratory)
    • Review Section
      Medium-sized Section 30:Applied physics and engineering and related fields
    • Research Institution
      Osaka University
  •  Nonlinear Optical Device Application of Polarity-Controlled Nitride Semiconductor Singular StructurePrincipal InvestigatorOngoing

    • Principal Investigator
      片山 竜二
    • Project Period (FY)
      2017 – 2018
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      Osaka University
  •  Development of Quantum Computing System Based on Ferroelectric/Paraelectric Stacked WaveguidesPrincipal InvestigatorOngoing

    • Principal Investigator
      片山 竜二
    • Project Period (FY)
      2017 – 2021
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Optical engineering, Photon science
    • Research Institution
      Osaka University
  •  Development of monolithic cavity wavelength converter made of widegap semiconductorsPrincipal InvestigatorOngoing

    • Principal Investigator
      片山 竜二
    • Project Period (FY)
      2017 – 2018
    • Research Category
      Challenging Research (Exploratory)
    • Research Field
      Applied physics and engineering and related fields
    • Research Institution
      Osaka University
  •  Development of Compact Deep-UV Laser Based on Wavelength Converter Integrated with Blue Laser Light SourcesPrincipal Investigator

    • Principal Investigator
      Katayama Ryuji
    • Project Period (FY)
      2014 – 2016
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Crystal engineering
    • Research Institution
      Osaka University
      Tohoku University
  •  Generation and control of quantum correlated photons from atomic-layer doped semiconductors

    • Principal Investigator
      YAGUCHI Hiroyuki
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Saitama University
  •  Research on quantum optical application of novel polar widegap semiconductorsPrincipal Investigator

    • Principal Investigator
      KATAYAMA Ryuji
    • Project Period (FY)
      2011 – 2013
    • Research Category
      Grant-in-Aid for Young Scientists (A)
    • Research Field
      Applied optics/Quantum optical engineering
    • Research Institution
      Tohoku University
  •  Growth of high phase purity cubic III-nitride semiconductor thin films and application of their heterostructures

    • Principal Investigator
      ONABE Kentaro
    • Project Period (FY)
      2010 – 2012
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      The University of Tokyo
  •  有機N原料によるInNおよび関連混晶薄膜のMOVPE成長

    • Principal Investigator
      尾鍋 研太郎
    • Project Period (FY)
      2009 – 2010
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      The University of Tokyo
  •  Single Photon Generation from locally doped semiconductors

    • Principal Investigator
      YAGUCHI Hiroyuki
    • Project Period (FY)
      2009 – 2011
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Saitama University
  •  有機N原料によるInNのMOVPE成長

    • Principal Investigator
      ONABE Kentaro
    • Project Period (FY)
      2007 – 2008
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Review Section
      Science and Engineering
    • Research Institution
      The University of Tokyo
  •  Growth and material applications of narrow-bandgap III-V-N alloy semiconductor quantum nano-structures

    • Principal Investigator
      ONABE Kentaro
    • Project Period (FY)
      2007 – 2009
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      The University of Tokyo
  •  窒化物半導体格子極性反転へテロ構造の作製と非線形光学素子応用Principal Investigator

    • Principal Investigator
      片山 竜二
    • Project Period (FY)
      2004 – 2005
    • Research Category
      Grant-in-Aid for Young Scientists (B)
    • Research Field
      Applied optics/Quantum optical engineering
    • Research Institution
      The University of Tokyo
  •  Cubic Nitride Semiconductor Heterostructures and Their Application to Optical and Electronic Devices

    • Principal Investigator
      ONABE Kentaro
    • Project Period (FY)
      2000 – 2003
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      The University of Tokyo
  •  Huge Bandgap-Bowing Effect in III-V-N Type Nitride Alloy Semiconductors and its Applications

    • Principal Investigator
      ONABE Kentaro
    • Project Period (FY)
      1999 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      The University of Tokyo

All 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 Other

All Journal Article Presentation

  • [Journal Article] Polarity inversion of aluminum nitride by direct wafer bonding2018

    • Author(s)
      Hayashi, Y; Katayama, R; Akiyama, T; Ito, T; Miyake, H
    • Journal Title

      Applied Physics Express

      Volume: 11 Issue: 3 Pages: 031003-031003

    • DOI
      10.7567/apex.11.031003
    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06415, KAKENHI-PROJECT-17H01063, KAKENHI-PROJECT-17K19078, KAKENHI-PUBLICLY-17H05335
  • [Journal Article] Biexciton Emission From Single Quantum-Confined Structures in N-Polar (000-1) InGaN/GaN Multiple Quantum Wells2017

    • Author(s)
      Takamiya Kengo、Yagi Shuhei、Yaguchi Hiroyuki、Akiyama Hidefumi、Shojiki Kanako、Tanikawa Tomoyuki、Katayama Ryuji
    • Journal Title

      physica status solidi (b)

      Volume: 255 Pages: 1700454-1700454

    • DOI
      10.1002/pssb.201700454
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H01063, KAKENHI-PROJECT-15H03968, KAKENHI-PUBLICLY-17H05335
  • [Journal Article] Absolute technique for measuring internal electric fields in InGaN/GaN light-emitting diodes by electroreflectance applicable to all crystal orientations2017

    • Author(s)
      Tomoyuki Tanikawa, Kanako Shojiki, Ryuji Katayama, Shigeyuki Kuboya, Takashi Matsuoka, Yoshio Honda, Hiroshi Amano
    • Journal Title

      Applied Physics Express

      Volume: 10 Issue: 8 Pages: 082101-082101

    • DOI
      10.7567/apex.10.082101
    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PUBLICLY-17H05325, KAKENHI-PROJECT-17H01063, KAKENHI-PROJECT-17K19078, KAKENHI-PUBLICLY-17H05335
  • [Journal Article] Effects of Mg/Ga and V/III source ratios on hole concentration of N-polar $(000\bar{1})$ p-type GaN grown by metalorganic vapor phase epitaxy2016

    • Author(s)
      R. Nonoda, K. Shojiki, T. Tanikawa, S. Kuboya, R. Katayama, and T. Matsuoka
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 (5S) Issue: 5S Pages: 05FE01-05FE01

    • DOI
      10.7567/jjap.55.05fe01
    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Journal Article] Nanometer scale fabrication and optical response of InGaN/GaN quantum disks2016

    • Author(s)
      Yi-Chun Lai, Akio Higo, Takayuki Kiba, Cedric Thomas, Shula Chen, Chang Yong Lee, Tomoyuki Tanikawa, Shigeyuki Kuboya, Ryuji Katayama, Kanako Shojiki, Junichi Takayama, Ichiro Yamashita, Akihiro Murayama, Gou-Chung Chi, Peichen Yu, Seiji Samukawa
    • Journal Title

      Nanotechnology

      Volume: 27

    • DOI
      10.1088/0957-4484/27/42/425401
    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-16H06359, KAKENHI-PROJECT-26600082
  • [Journal Article] Large Stokes-like shift in N-polar $(000\bar{1})$ InGaN/GaN multiple-quantum-well light-emitting diodes2016

    • Author(s)
      T. Tanikawa, K. Shojiki, S .Kuboya, R. Katayama, and T. Matsuoka
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 (5S) Issue: 5S Pages: 05FJ03-05FJ03

    • DOI
      10.7567/jjap.55.05fj03
    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26600082, KAKENHI-PROJECT-13J10877, KAKENHI-PROJECT-16K18074
  • [Journal Article] Homogeneity improvement of N-polar $(000\bar{1})$ InGaN/GaN multiple quantum wells by usingc-plane sapphire substrate with off-cut-angle towarda-sapphire plane2016

    • Author(s)
      Kanako Shojiki, Takashi Hanada, Tomoyuki Tanikawa, Yasuhiko Imai, Shigeru Kimura, Ryohei Nonoda, Shigeyuki Kuboya, Ryuji Katayama, Takashi Matsuoka
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 (5S) Issue: 5S Pages: 05FA09-05FA09

    • DOI
      10.7567/jjap.55.05fa09
    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Journal Article] Polarity control of GaN grown on pulsed-laser-deposited AlN/GaN template by metalorganic vapor phase epitaxy2016

    • Author(s)
      J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 (5S) Issue: 5S Pages: 05FA04-05FA04

    • DOI
      10.7567/jjap.55.05fa04
    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Journal Article] Ga‐polar GaN film grown by MOVPE on cleaved ScAlMgO4 (0001) substrate with millimeter‐scale wide terraces2016

    • Author(s)
      Takuya Iwabuchi, Shigeyuki Kuboya, Tomoyuki Tanikawa, Takashi Hanada, Ryuji Katayama, Tsuguo Fukuda, Takashi Matsuoka
    • Journal Title

      physica status solidi (a)

      Volume: -

    • DOI
      10.1002/pssa.201600754
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Journal Article] Suppression of metastable-phase inclusion in N-polar (000-1) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy2015

    • Author(s)
      K. Shojiki, J.H.Choi, T. Iwabuchi, N. Usami, T. Tanikawa, S. Kuboya,T. Hanada, R. Katayama, and T. Matsuoka
    • Journal Title

      Applied Physics Letters

      Volume: 106 (22)

    • DOI
      10.1063/1.4922131
    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-26600082, KAKENHI-PROJECT-13J10877
  • [Journal Article] Red to blue wavelength emission of N-polar $(000\bar{1})$ InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy2015

    • Author(s)
      K. Shojiki, T. Tanikawa, J.H.Choi, S. Kuboya,T. Hanada, R. Katayama, and T. Matsuoka
    • Journal Title

      Applied Physics Express

      Volume: 8 (6) Issue: 6 Pages: 061005-061005

    • DOI
      10.7567/apex.8.061005
    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-26600082, KAKENHI-PROJECT-13J10877
  • [Journal Article] Effect of Sapphire Nitridation and Group-III Source Flow Rate Ratio on In-Incorporation Into InGaN Grown by Metalorganic Vapor Phase Epitaxy2014

    • Author(s)
      J. H. Choi, K. Shojiki, T. Tanikawa, T. Hanada, R. Katayama, T. Matsuoka
    • Journal Title

      J. Nanoscience and Nanotechnology

      Volume: 14 Pages: 6112-6115

    • DOI
      10.1166/jnn.2014.8306
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-13J10877, KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
  • [Journal Article] Enhancement of surface migration by Mg doping in the metalorganic vapor phase epitaxy of N-polar $(000\bar{1})$ GaN/sapphire2014

    • Author(s)
      T. Tanikawa, K. Shojiki, T. Aisaka, T. Kimura, S. Kuboya, T. Hanada, R. Katayama, T. Matsuoka
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 53 Issue: 5S1 Pages: 05FL05-05FL05

    • DOI
      10.7567/jjap.53.05fl05
    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-13J10877, KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
  • [Journal Article] Effect ofc-plane sapphire substrate miscut angle on indium content of MOVPE-grown N-polar InGaN2014

    • Author(s)
      K. Shojiki and R. Katayama(他6名)
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 53(5S1) Issue: 5S1 Pages: 05FL07-05FL07

    • DOI
      10.7567/jjap.53.05fl07
    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
  • [Journal Article] Key Factors for Metal Organic Chemical Vapor Deposition of InGaN Films with High InN Molar Fraction2013

    • Author(s)
      Yu Huai Liu, Fang Wang, Wei Zhang, Shou Yi Yang, Yuan Tao Zhang, Ryuji Katayama, Takashi Matsuoka
    • Journal Title

      Applied Mechanics and Materials

      Volume: 341 Pages: 204-207

    • DOI
      10.4028/www.scientific.net/amm.341-342.204
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Journal Article] Investigation of Indium Iincorporation into InGaN by Nitridation of Sapphire Substrate in MOVPE2013

    • Author(s)
      J. H. Choi and R. Katayama(他4名)
    • Journal Title

      phys. stat. sol. (c)

      Volume: 10(3) Pages: 417-420

    • DOI
      10.1002/pssc.201200667
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
  • [Journal Article] RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer2013

    • Author(s)
      M. Kakuda, S. Morikawa, S. Kuboya、R. Katayama, H. Yaguchi, K. Onabe
    • Journal Title

      Journal of Crystal Growth

      Volume: In Press

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Journal Article] Optical Properties of InN films Grown by Pressurized-reactor Metalorganic Vapor Phase Epitaxy2013

    • Author(s)
      Yuantao Zhang, Takeshi Kimura, Kiattiwut Prasertusk, Takuya Iwabuchi, Suresh Kumar, Yuhuai Liu, Ryuji Katayama, Takashi Matsuoka
    • Journal Title

      Thin Solid Films

      Volume: 536 Pages: 152-155

    • DOI
      10.1016/j.tsf.2013.04.004
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
  • [Journal Article] RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer layer2013

    • Author(s)
      M Kakuda, S Morikawa, S Kuboya, R Katayama, H Yaguchi, K Onabe
    • Journal Title

      Journal of Crystal Growth

      Volume: 378 Pages: 307-309

    • DOI
      10.1016/j.jcrysgro.2012.12.120
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Journal Article] Molecular beam epitaxy of ErGaAs alloys on GaAs (001)2013

    • Author(s)
      RG Jin, S Yagi, Y Hijikata, S Kuboya, K Onabe, R Katayama, H Yaguchi
    • Journal Title

      Journal of Crystal Growth

      Volume: 378 Pages: 85-87

    • DOI
      10.1016/j.jcrysgro.2012.12.043
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24360004
  • [Journal Article] RF-MBE growth of cubic AlN on MgO(001) substrates via 2-step c-GaN buffer2013

    • Author(s)
      M. Kakuda, S. Morikawa, S. Kuboya、R. Katayama, H. Yaguchi, K. Onabe,
    • Journal Title

      Journal of Crystal Growth

      Volume: (In Press)

    • URL
      http://www.sciencedirect.com/science/journal/00220248?oldURL=y
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Journal Article] Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs2013

    • Author(s)
      Kengo Takamiya, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi
    • Journal Title

      AIP Conference Prodeedings

      Volume: 1566 (1) Pages: 538-539

    • DOI
      10.1063/1.4848523
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24360004
  • [Journal Article] Tilted Domain and Indium Content of InGaN Layer on $m$-Plane GaN Substrate Grown by Metalorganic Vapor Phase Epitaxy2012

    • Author(s)
      K. Shojiki and R. Katayama(他4名)
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 51 Pages: 04DH01-04DH01

    • DOI
      10.1143/jjap.51.04dh01
    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
  • [Journal Article] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2012

    • Author(s)
      K. Takamiya, Y.Endo, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H. Yaguchi
    • Journal Title

      Materials Science Forum

      Volume: Vol.706-709 Pages: 2916-2921

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Journal Article] Effect of Nitridation on Indium composition of InGaN Films2012

    • Author(s)
      J. H. Choi, S. Kumar, S. Y. Ji, K. Shojiki, T. Hanada, R. Katayama and T. Matsuoka
    • Journal Title

      Key. Eng. Mater.

      Volume: 508 Pages: 193-193

    • DOI
      10.4028/www.scientific.net/kem.508.193
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24560362
  • [Journal Article] Effect of Nitridation on Indium-composition of InGaN Films2012

    • Author(s)
      J. H. Choi and R. Katayama(他5名)
    • Journal Title

      Key. Eng. Mater

      Volume: 508 Pages: 193-198

    • URL
      http://www.scientific.net/KEM.508.193
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Journal Article] Optical properties of the periodic polarity-inverted GaN waveguides2012

    • Author(s)
      R. Katayama(他7名)
    • Journal Title

      Proc. of SPIE

      Volume: 8268 Pages: 826814-826913

    • DOI
      10.1117/12.909831
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Journal Article] Biexciton Luminescence from Individual Isoelectronic Traps in Nitrogen $\delta$-Doped GaAs2012

    • Author(s)
      K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, and H. Yaguchi
    • Journal Title

      Applied Physics Express

      Volume: 5 Issue: 11 Pages: 111201-111201

    • DOI
      10.1143/apex.5.111201
    • ISSN
      1882-0778, 1882-0786
    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-20104004, KAKENHI-PROJECT-23360135, KAKENHI-PROJECT-23686010, KAKENHI-PROJECT-24360004
  • [Journal Article] Photoluminescence from single isoelectronic traps in nitrogen delta-dopedGaAs grown on GaAs(111)A2010

    • Author(s)
      T.Fukushima, Y.Hijikata, H.Yaguchi, S.Yoshida, M.Okano, M.Yoshita, H.Akiyama, S.Kuboya, R.Katayama, K.Onabe
    • Journal Title

      Physica E(掲載確定)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Journal Article] Photoluminescence from single is electronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A2010

    • Author(s)
      T. Fukushima, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Okano, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe
    • Journal Title

      Physica

      Volume: Vol.42, No10

    • DOI
      10.1016/j.physe.2009.12.011
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Journal Article] Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A2010

    • Author(s)
      T.Fukushima, Y.Hijikata, H.Yaguchi, S.Yoshida, M.Okano, M.Yoshita, H.Akiyama, S.Kuboya, R.Katayama, K.Onabe
    • Journal Title

      Physica E

      Volume: 42 Pages: 2529-2531

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Journal Article] MOVPE Growth of InN films Using 1,1-Dimethylhydrazine as a Nitrogen2009

    • Author(s)
      Q.T.Thieu, Y.Seki, S.Kuboya, R.Katayama, K.Onabe
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2802-2805

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] MOVPE Growth of InN films Using 1,1-Dimethylhydrazine as a Nitrogen Precursor2009

    • Author(s)
      Q.T.Thieu, Y.Seki, S.Kuboya, R.Katayama, K.Onabe
    • Journal Title

      Journal of Crystal Growth 311

      Pages: 2802-2805

    • Peer Reviewed
    • Data Source
      KAKENHI-PUBLICLY-21016003
  • [Journal Article] MOVPE growth of InN films using 1, 1-dimethylhydrazine as a nitrogen precursor2009

    • Author(s)
      Q. T. Thieu, Y. Seki, S. Kuboya, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth Vol. 311

      Pages: 2802-2805

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] MOVPE Growth of InN films Using 1, 1-Dimethylhydrazine as a Nitrogen Precursor Journal of Crystal Growth2009

    • Author(s)
      Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
    • Journal Title

      Journal of Crystal Growth (印刷中)(掲載確定)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19032002
  • [Journal Article] Metastable cubic InN layers on GaAs(001)substrates grown by MBE : Growth condition and crystal structure2009

    • Author(s)
      S.Sanorpim, P.Jantawongrit, S.Kuntharin, C.Thanachayanont, T.Nakamura, R.Katayama, K.Onabe
    • Journal Title

      physica status solidi(c) 6

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] Incorporation of N in high N-content GaAsN films investigated by Raman scattering2008

    • Author(s)
      S. Sanorpim, P. Panpech, S. Vijarnwannaluk, F. Nakajima, S. Kuboya, R. Katayama, K. Onabe
    • Journal Title

      physica status solidi (c) Vol. 5

      Pages: 2923-2925

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] Effect of substrate-surface orientation on the N incorporation in GaAsN films on GaAs grown by MOVPE2008

    • Author(s)
      P. Klangtakai, S. Sanorpim, S. Kuboya, R. Katayama, K. Onabe
    • Journal Title

      Advanced Materials Research Vol. 55-57

      Pages: 825-828

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] MOVPE growth and photoluminescence properties of InAsN QDs2008

    • Author(s)
      S. Kuboya, S. Takahashi, Q. T. Thieu, F. Nakajima, R. Katayama, K. Onabe
    • Journal Title

      physica status solidi (c) Vol. 5

      Pages: 1715-1718

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] Growth and post-growth rapid thermal annealing of InGaPN on GaP grown by metalorganic vapor phase epitaxy2007

    • Author(s)
      S. Sanorpim, F. Nakajima, N. Nakadan, T. Kimura, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 150-153

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] Structural investigation of InGaAsN films grown on pseudo-lattice-matched InGaAs substrates by metalorganic vapor phase epitaxy2007

    • Author(s)
      P. Kongjaeng, S. Sanorpim, T. Yamamoto, W. Ono, F. Nakajima, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth Vol. 298

      Pages: 111-115

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] InAsN quantum dots grown on GaAs(001) substrates by MOVPE2007

    • Author(s)
      S. Kuboya, Q. T. Thieu, F. Nakajima, R. Katayama, K. Onabe
    • Journal Title

      physica status solidi (c) 4

      Pages: 2387-2390

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] Photoluminescence and photoluminescence-excitation spectro-scopy of InGaPN/GaP lattice-matched single quantum well structures grown by MOVPE2007

    • Author(s)
      D. Kaewket, S. Tungasmita, S. Sanorpim, F. Nakajima, N. Nakadan, T. Kimura, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth Vol. 298

      Pages: 531-535

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] Structural investigation of InGaAsN films grown on pseudo-lattice-matched InGaAs substrates by metalorganic vapor phase epitaxy2007

    • Author(s)
      P. Kongjaeng, S. Sanorpim, T. Yamamoto, W. Ono, F. Nakajima, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 111-115

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] Photoluminescence and photoluminescence-excitation spectroscopy of InGaPN/GaP lattice-matched single quantum well structures grown by MOVPE2007

    • Author(s)
      D. Kaewket, S. Tungasmita, S. Sanorpim, F. Nakajima, N. Nakadan, T. Kimura, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 531-535

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] MOVPE and characterization of InAsN/GaAs multiple quantum wells2007

    • Author(s)
      S. Kuboya, Q. T. Thieu, W. Ono, F. Nakajima, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth Vol. 298

      Pages: 544-547

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] InAsN quantum dots grown on GaAs(001) substrates by MOVPE2007

    • Author(s)
      S. Kuboya, Q. T. Thieu, F. Nakajima, R. Katayama, K. Onabe
    • Journal Title

      physica status solidi (c) Vol. 4

      Pages: 2387-2390

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] Growth and post-growth rapid thermal annealing of InGaPN on GaP grown by metalorganic vapor phase epitaxy2007

    • Author(s)
      S. Sanorpim, F. Nakajima, N. Nakadan, T. Kimura, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth Vol. 298

      Pages: 150-153

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] MOVPE and characterization of InAsN/GaAs multiple quantum wells2007

    • Author(s)
      S. Kuboya, Q. T. Thieu, W. Ono, F. Nakajima, R. Katayama, K. Onabe
    • Journal Title

      Journal of Crystal Growth 298

      Pages: 544-547

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Journal Article] Shutterless nitrogen flux modulation using a dual-mode rf-plasma operation during RF-MBE growth of GaN2006

    • Author(s)
      R.Katayama, H.Tsurusawa, T.Nakamura, H.Komaki, K.Onabe
    • Journal Title

      physica status solidi (出版中)

    • Data Source
      KAKENHI-PROJECT-16760032
  • [Journal Article] Buffer design for nitrogen polarity GaN on sapphire (0001) by RF-MBE and application to the nanostructure formation using KOH etching2006

    • Author(s)
      R.Katayama, K.Onabe
    • Journal Title

      Physica E (出版中)

    • Data Source
      KAKENHI-PROJECT-16760032
  • [Journal Article] Fabrication of cubic and hexagonal GaN microcrystals on GaAs(001) substrates with relatively-thin low temperature GaN buffer layer2005

    • Author(s)
      R.Katayama, K.Onabe
    • Journal Title

      Journal of Crystal Growth 278

      Pages: 431-436

    • Data Source
      KAKENHI-PROJECT-16760032
  • [Journal Article] Buffer design for nitrogen polarity GaN on sapphire (0001) by RF-MBE and application to the nanostructure formation using KOH etching2005

    • Author(s)
      R.Katayama, K.Onabe
    • Journal Title

      Physica E

    • Data Source
      KAKENHI-PROJECT-16760032
  • [Journal Article] Fabrication of cubic and hexagonal GaN micro-crystals on GaAs(001) substrates with relatively-thin low temperature GaN buffer layer2005

    • Author(s)
      R.Katayama, K.Onabe
    • Journal Title

      Journal of Crystal Growth 276(1-2)

    • Data Source
      KAKENHI-PROJECT-16760032
  • [Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発:GaNストリップ導波路型方向性結合器の設計2018

    • Author(s)
      紀平 将史,三輪 純也,上向井 正裕,藤 諒健,藤原 康文,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発:GaNリブ導波路型方向性結合器の特性評価2018

    • Author(s)
      三輪 純也,紀平 将史,上向井 正裕,藤 諒健,藤原 康文,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] 窒化物半導体極性制御特異構造の非線形光学素子応用2018

    • Author(s)
      片山竜二
    • Organizer
      科学研究費補助金 新学術領域研究 領域報告会
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] 表面活性化接合とSi基板剥離によるGaN極性反転構造の作製2018

    • Author(s)
      小野寺 卓也,上向井 正裕,髙橋 一矢,岩谷 素顕,赤﨑 勇,林 侑介,三宅 秀人,久志本 真希,鄭 惠貞,本田 善央,天野 浩,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] ZrO2 /AlN積層導波路を用いた深紫外第二高調波発生デバイスの設計2018

    • Author(s)
      山口 修平,上向井 正裕,髙橋 一矢,岩谷 素顕,赤﨑 勇,林 侑介,三宅 秀人,山田 智也,藤原 康文,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] GaNモノリシック微小二重共振器型第二高調波発生デバイスの作製2018

    • Author(s)
      南部 誠明,上向井 正裕,藤 諒健,山田 智也,藤原 康文,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] GaNモノリシック微小二重共振器型第二高調波発生デバイスの作製2018

    • Author(s)
      南部 誠明,上向井 正裕,藤 諒健,山田 智也,藤原 康文,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] 深溝周期構造を用いたGaAsP量子井戸波長可変単一モードレーザー2018

    • Author(s)
      上向井 正裕,片山 竜二
    • Organizer
      第38回 レーザー学会 学術講演会
    • Invited
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] 表面活性化接合とSi基板剥離によるGaN極性反転構造の作製2018

    • Author(s)
      小野寺 卓也,上向井 正裕,髙橋 一矢,岩谷 素顕,赤﨑 勇,林 侑介,三宅 秀人,久志本 真希,鄭 惠貞,本田 善央,天野 浩,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発:GaNストリップ導波路型方向性結合器の設計2018

    • Author(s)
      紀平 将史,三輪 純也,上向井 正裕,藤 諒健,藤原 康文,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] 深溝周期構造を用いたGaAsP量子井戸波長可変単一モードレーザー2018

    • Author(s)
      上向井 正裕,片山 竜二
    • Organizer
      第38回 レーザー学会 学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] 周期的スロット構造を用いたGaAsP波長可変単一モードレーザ2018

    • Author(s)
      楠本 壮,上向井 正裕,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] Second harmonic generation from polarity-inverted GaN waveguide2018

    • Author(s)
      R. Katayama
    • Organizer
      SPIE Photonics West 2018
    • Int'l Joint Research / Invited
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発:GaNリブ導波路型方向性結合器の特性評価2018

    • Author(s)
      三輪 純也,紀平 将史,上向井 正裕,藤 諒健,藤原 康文,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] 周期的スロット構造を用いたGaAsP波長可変単一モードレーザ2018

    • Author(s)
      楠本 壮,上向井 正裕,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] GaNモノリシック微小二重共振器型第二高調波発生デバイスの作製2018

    • Author(s)
      南部 誠明,上向井 正裕,藤 諒健,山田 智也,藤原 康文,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] ZrO2 /AlN積層導波路を用いた深紫外第二高調波発生デバイスの設計2018

    • Author(s)
      山口 修平,上向井 正裕,髙橋 一矢,岩谷 素顕,赤﨑 勇,林 侑介,三宅 秀人,山田 智也,藤原 康文,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] 深溝周期構造を用いたGaAsP量子井戸波長可変単一モードレーザー2018

    • Author(s)
      上向井 正裕,片山 竜二
    • Organizer
      第38回 レーザー学会 学術講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] Second harmonic generation from polarity-inverted GaN waveguide2018

    • Author(s)
      R. Katayama
    • Organizer
      SPIE Photonics West 2018
    • Int'l Joint Research / Invited
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] 周期的スロット構造を用いたGaAsP波長可変単一モードレーザ2018

    • Author(s)
      楠本 壮,上向井 正裕,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] 窒化物半導体極性制御特異構造の非線形光学素子応用2018

    • Author(s)
      片山竜二
    • Organizer
      科学研究費補助金 新学術領域研究 領域報告会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] ZrO2 /AlN積層導波路を用いた深紫外第二高調波発生デバイスの設計2018

    • Author(s)
      山口 修平,上向井 正裕,髙橋 一矢,岩谷 素顕,赤﨑 勇,林 侑介,三宅 秀人,山田 智也,藤原 康文,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] 表面活性化接合とSi基板剥離によるGaN極性反転構造の作製2018

    • Author(s)
      小野寺 卓也,上向井 正裕,髙橋 一矢,岩谷 素顕,赤﨑 勇,林 侑介,三宅 秀人,久志本 真希,鄭 惠貞,本田 善央,天野 浩,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] Second harmonic generation from polarity-inverted GaN waveguide2018

    • Author(s)
      R. Katayama
    • Organizer
      SPIE Photonics West 2018
    • Int'l Joint Research / Invited
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発:GaNストリップ導波路型方向性結合器の設計2018

    • Author(s)
      紀平 将史,三輪 純也,上向井 正裕,藤 諒健,藤原 康文,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] 窒化物半導体極性制御特異構造の非線形光学素子応用2018

    • Author(s)
      片山竜二
    • Organizer
      科学研究費補助金 新学術領域研究 領域報告会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発:GaNリブ導波路型方向性結合器の特性評価2018

    • Author(s)
      三輪 純也,紀平 将史,上向井 正裕,藤 諒健,藤原 康文,片山 竜二
    • Organizer
      第65回 応用物理学会 春季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] 高次結合ディープエッチDBRレーザの作製と単一モード発振2017

    • Author(s)
      山下 諒大、上向井 正裕、片山 竜二
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] GaNモノリシック微小二重共振器型第二高調波発生デバイスの設計2017

    • Author(s)
      南部 誠明,上向井 正裕,藤 諒健,山田 智也,藤原 康文,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] AlN・GaN・LiNbO3の表面活性化ウエハ接合技術の開発2017

    • Author(s)
      小野寺 卓也,上向井 正裕,髙橋 一矢,岩谷 素顕,赤﨑 勇,林 侑介,三宅 秀人,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] GaNモノリシック微小二重共振器型第二高調波発生デバイスの設計2017

    • Author(s)
      南部 誠明,上向井 正裕,藤 諒健,山田 智也,藤原 康文,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] 疑似位相整合SHGに向けたFace to FaceアニールによるAlN分極反転構造の作製2017

    • Author(s)
      林 侑介,三宅 秀人,平松 和政,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] 窒化物半導体極性制御特異構造の非線形光学素子応用2017

    • Author(s)
      片山 竜二
    • Organizer
      科学研究費補助金 新学術領域研究 領域報告会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] 窒化物半導体極性制御特異構造の非線形光学素子応用2017

    • Author(s)
      片山 竜二
    • Organizer
      科学研究費補助金 新学術領域研究 領域報告会
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] 疑似位相整合SHGに向けたFace to FaceアニールによるAlN分極反転構造の作製2017

    • Author(s)
      林 侑介,三宅 秀人,平松 和政,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] Development of Surface-Activated Wafer Bonding Method of AlN, GaN and LiNbO32017

    • Author(s)
      T. Onodera, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] 極性反転積層AlN光導波路を用いた波長変換デバイスの設計2017

    • Author(s)
      山口 修平,上向井 正裕,髙橋 一矢,岩谷 素顕,赤﨑 勇,林 侑介,三宅 秀人,山田 智也,藤原 康文,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] Design of GaN monolithic doubly-resonant microcavity SHG device2017

    • Author(s)
      T. Nambu, M. Uemukai, R. Fuji, T. Yamada, Y. Fujiwara and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] GaAsP quantum well tunable single-mode semiconductor lasers with deeply etched periodic structures2017

    • Author(s)
      M. Uemukai, A. Yamashita, S. Kusumoto, R. Katayama
    • Organizer
      発光素子とその産業応用に関する国際学会 LEDIA'17
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] GaAsP quantum well single-mode semiconductor laser with periodically slotted structure2017

    • Author(s)
      S. Kusumoto, M. Uemukai and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] Development of Surface-Activated Wafer Bonding Method of AlN, GaN and LiNbO32017

    • Author(s)
      T. Onodera, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] 窒化物半導体極性制御特異構造の非線形光学素子応用2017

    • Author(s)
      片山 竜二
    • Organizer
      科学研究費補助金 新学術領域研究 領域報告会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] GaN rib waveguide directional coupler for optical quantum information processing systems2017

    • Author(s)
      J. Miwa, M. Kihira, M. Uemukai, R. Fuji, Y. Fujiwara and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] Design of polarity-inverted multilayer AlN waveguide for deep UV second harmonic generation2017

    • Author(s)
      S. Yamaguchi, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake, T. Yamada, Y. Fujiwara and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発:GaNリブ導波路型方向性結合器の作製2017

    • Author(s)
      三輪 純也,上向井 正裕,藤 諒健,藤原 康文,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] AlN・GaN・LiNbO3の表面活性化ウエハ接合技術の開発2017

    • Author(s)
      小野寺 卓也,上向井 正裕,髙橋 一矢,岩谷 素顕,赤﨑 勇,林 侑介,三宅 秀人,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] GaAsP quantum well tunable single-mode semiconductor lasers with deeply etched periodic structures2017

    • Author(s)
      M. Uemukai, A. Yamashita, S. Kusumoto, R. Katayama
    • Organizer
      発光素子とその産業応用に関する国際学会 LEDIA'17
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] Polarity inversion of AlN fabricated by wafer bonding and its atomic arrangement models2017

    • Author(s)
      Y. Hayashi, H. Miyake,K. Hiramatsu, T. Akiyama, T. Ito and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] Design of polarity-inverted multilayer AlN waveguide for deep UV second harmonic generation2017

    • Author(s)
      S. Yamaguchi, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake, T. Yamada, Y. Fujiwara and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] GaN rib waveguide directional coupler for optical quantum information processing systems2017

    • Author(s)
      J. Miwa, M. Kihira, M. Uemukai, R. Fuji, Y. Fujiwara and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] Design of polarity-inverted multilayer AlN waveguide for deep UV second harmonic generation2017

    • Author(s)
      S. Yamaguchi, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake, T. Yamada, Y. Fujiwara and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] GaAsP quantum well single-mode semiconductor laser with periodically slotted structure2017

    • Author(s)
      S. Kusumoto, M. Uemukai and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] Development of Surface-Activated Wafer Bonding Method of AlN, GaN and LiNbO32017

    • Author(s)
      T. Onodera, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake and R. Katayama
    • Organizer
      紫外発光材料及びデバイスに関する国際ワークショップ IWUMD2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] 疑似位相整合SHGに向けたFace to FaceアニールによるAlN分極反転構造の作製2017

    • Author(s)
      林 侑介,三宅 秀人,平松 和政,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] AlN・GaN・LiNbO3の表面活性化ウエハ接合技術の開発2017

    • Author(s)
      小野寺 卓也,上向井 正裕,髙橋 一矢,岩谷 素顕,赤﨑 勇,林 侑介,三宅 秀人,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] ワイドギャップ窒化物半導体による量子情報処理システム開発2017

    • Author(s)
      片山竜二
    • Organizer
      日本学術振興会 第162委員会 第106回研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] 極性反転積層AlN光導波路を用いた波長変換デバイスの設計2017

    • Author(s)
      山口 修平,上向井 正裕,髙橋 一矢,岩谷 素顕,赤﨑 勇,林 侑介,三宅 秀人,山田 智也,藤原 康文,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] 極性ワイドギャップ半導体の量子光学応用2017

    • Author(s)
      片山竜二
    • Organizer
      IEEE Photonics Society Kansai Chapter 講演会
    • Place of Presentation
      伊勢市観光文化会館(三重県・伊勢市)
    • Year and Date
      2017-01-18
    • Invited
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] Design of GaN monolithic doubly-resonant microcavity SHG device2017

    • Author(s)
      T. Nambu, M. Uemukai, R. Fuji, T. Yamada, Y. Fujiwara and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] ワイドギャップ半導体の量子光学素子応用2017

    • Author(s)
      片山竜二
    • Organizer
      第64回応用物理学会春季学術講演会 シンポジウム 金属酸化物の結晶物性に迫る
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Invited
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] GaAsP quantum well tunable single-mode semiconductor lasers with deeply etched periodic structures2017

    • Author(s)
      M. Uemukai, A. Yamashita, S. Kusumoto, R. Katayama
    • Organizer
      発光素子とその産業応用に関する国際学会 LEDIA'17
    • Int'l Joint Research
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] ワイドギャップ窒化物半導体による量子情報処理システム開発2017

    • Author(s)
      片山竜二
    • Organizer
      日本学術振興会 第162委員会 第106回研究会
    • Invited
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] Face to FaceアニールによるAlN分極反転構造の作製と評価2017

    • Author(s)
      林 侑介,三宅 秀人,平松 和政,片山 竜二
    • Organizer
      第9回 ナノ構造・エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] Polarity inversion of AlN fabricated by wafer bonding and its atomic arrangement models2017

    • Author(s)
      Y. Hayashi, H. Miyake,K. Hiramatsu, T. Akiyama, T. Ito and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] ワイドギャップ窒化物半導体による量子情報処理システム開発2017

    • Author(s)
      片山竜二
    • Organizer
      日本学術振興会 第162委員会 第106回研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] Development of Surface-Activated Wafer Bonding Method of AlN, GaN and LiNbO32017

    • Author(s)
      T. Onodera, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake and R. Katayama
    • Organizer
      紫外発光材料及びデバイスに関する国際ワークショップ IWUMD2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] Development of Surface-Activated Wafer Bonding Method of AlN, GaN and LiNbO32017

    • Author(s)
      T. Onodera, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発:GaNリブ導波路型方向性結合器の作製2017

    • Author(s)
      三輪 純也,上向井 正裕,藤 諒健,藤原 康文,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] AlN系窒化物半導体のウェハ接合技術の検討2017

    • Author(s)
      高橋 一矢、篠田 涼二、岩谷 素顕、竹内 哲也、上山 智、服部 友一、赤崎 勇、片山 竜二、上向井 正裕
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜(神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] Design of GaN monolithic doubly-resonant microcavity SHG device2017

    • Author(s)
      T. Nambu, M. Uemukai, R. Fuji, T. Yamada, Y. Fujiwara and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] 極性反転積層AlN光導波路を用いた波長変換デバイスの設計2017

    • Author(s)
      山口 修平,上向井 正裕,髙橋 一矢,岩谷 素顕,赤﨑 勇,林 侑介,三宅 秀人,山田 智也,藤原 康文,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] 量子光学応用のための光導波路型マッハツェンダ干渉計の開発:GaNリブ導波路型方向性結合器の作製2017

    • Author(s)
      三輪 純也,上向井 正裕,藤 諒健,藤原 康文,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] Development of Surface-Activated Wafer Bonding Method of AlN, GaN and LiNbO32017

    • Author(s)
      T. Onodera, M. Uemukai, K. Takahashi, M. Iwaya, I. Akasaki, Y. Hayashi, H. Miyake and R. Katayama
    • Organizer
      紫外発光材料及びデバイスに関する国際ワークショップ IWUMD2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] Abrupt Polarity Inversion of AlN for Second Harmonic Generation in DUV Region2017

    • Author(s)
      Y. Hayashi, H. Miyake,K. Hiramatsu, T. Akiyama, T. Ito and R. Katayama
    • Organizer
      紫外発光材料及びデバイスに関する国際ワークショップ IWUMD2017
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] Polarity inversion of AlN fabricated by wafer bonding and its atomic arrangement models2017

    • Author(s)
      Y. Hayashi, H. Miyake,K. Hiramatsu, T. Akiyama, T. Ito and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PUBLICLY-17H05335
  • [Presentation] GaNモノリシック微小二重共振器型第二高調波発生デバイスの設計2017

    • Author(s)
      南部 誠明,上向井 正裕,藤 諒健,山田 智也,藤原 康文,片山 竜二
    • Organizer
      第78回 応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H01063
  • [Presentation] GaAsP quantum well single-mode semiconductor laser with periodically slotted structure2017

    • Author(s)
      S. Kusumoto, M. Uemukai and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] GaN rib waveguide directional coupler for optical quantum information processing systems2017

    • Author(s)
      J. Miwa, M. Kihira, M. Uemukai, R. Fuji, Y. Fujiwara and R. Katayama
    • Organizer
      第36回 電子材料シンポジウム EMS36
    • Data Source
      KAKENHI-PROJECT-17K19078
  • [Presentation] ワイドギャップ半導体研究の新展開 量子光学デバイス・システム開発2016

    • Author(s)
      片山竜二
    • Organizer
      第1回 電子材料若手研究会
    • Place of Presentation
      広島大学(広島県・東広島市)
    • Invited
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] ワイドギャップ半導体の 量子光学応用2016

    • Author(s)
      片山竜二
    • Organizer
      第9回 窒化物半導体の成長・評価に関する夏期セミナー
    • Place of Presentation
      立命館大学(滋賀県・草津市)
    • Year and Date
      2016-08-29
    • Invited
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] 窒化物半導体極性制御特異構造の非線形光学素子応用2016

    • Author(s)
      片山竜二
    • Organizer
      第77回応用物理学会秋季学術講演会 シンポジウム 窒化物半導体特異構造の科学 ~新機能の発現と理解~
    • Place of Presentation
      朱鷺メッセ(新潟県・新潟市)
    • Year and Date
      2016-09-13
    • Invited
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] 横型疑似位相整合AlN導波路を用いた深紫外第二高調波発生素子の設計2015

    • Author(s)
      三谷 悠貴,片山 竜二,劉 陳燁,正直 花奈子,谷川 智之,窪谷 茂幸,松岡 隆志
    • Organizer
      日本結晶成長学会 ナノ構造エピタキシャル成長分科会 第7回 窒化物半導体研究会
    • Place of Presentation
      東北大学 片平さくらホール、宮城県仙台市
    • Year and Date
      2015-05-07
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] Polarity control of MOVPE-grown GaN on AlN/GaN templates2015

    • Author(s)
      J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama and T. Matsuoka
    • Organizer
      日本結晶成長学会 ナノ構造エピタキシャル成長分科会 第7回 窒化物半導体研究会
    • Place of Presentation
      東北大学 片平さくらホール、宮城県仙台市
    • Year and Date
      2015-05-07
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] Polarity-controlled MOVPE growth of GaN on PLD-AlN templates2015

    • Author(s)
      J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama and T. Matsuoka
    • Organizer
      The 34th Electronic Materials Symposium
    • Place of Presentation
      ラフォーレ琵琶湖、滋賀県守山市
    • Year and Date
      2015-07-15
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] Observation of Indium Content Distribution on m-plane InGaN Film with Hilloks2014

    • Author(s)
      K. Shojiki, T. Hanada, J. H. Choi, Y. Imai, S. Kimura, T. Shimada, T. Tanikawa, R. Katayama, T. Matsuoka
    • Organizer
      2013 Annual Meeting of Excellent Graduate School for "Materials Integration Center" and "Materials Science Center" & International Workshop on Advanced Materials Synthesis Process and Nanostructure
    • Place of Presentation
      Sendai, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] c面Al2O3基板上にMOVPE成長したGaNの異常分散X線回折による極性判定2014

    • Author(s)
      花田貴,稲葉克彦,正直花奈子,崔正焄,片山竜二,谷川智之,窪谷茂幸,松岡隆志
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学淵野辺キャンパス
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Suppression of Metastable-Phase Inclusion in MOVPE-Grown N-Polar (000-1) InGaN/GaN Multiple Quantum Wells2014

    • Author(s)
      K. Shojiki, J. H. Choi, T. Iwabuchi, N. Usami, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
    • Organizer
      Conference on LED and it’s industrial application ‘14
    • Place of Presentation
      Yokohama, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] MOVPE成長 -c面InGaN/GaN多重量子井戸構造における準安定相混在の抑制2014

    • Author(s)
      正直花奈子,崔正焄,岩渕拓也,宇佐美徳隆,谷川智之,窪谷茂幸,花田貴,片山竜二,松岡隆志
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学淵野辺キャンパス
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Realization of p-Type Conduction in Mg-Doped N-Polar (000-1) GaN Grown by Metalorganic Vapor Phase Epitaxy2014

    • Author(s)
      T. Tanikawa, J. H. Choi, K. Shojiki, S. Kuboya, R. Katayama, and T. Matsuoka
    • Organizer
      Conference on LED and it’s industrial application ‘14
    • Place of Presentation
      Yokohama, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Crystallographic Polarity Dependence of Surface Morphology Evolution during MOVPE Growth of GaN/Sapphire2013

    • Author(s)
      N. Yoshinogawa, T. Iwabuchi, K. Shojiki, T. Kimura, T. Tanikawa, R. Katayama and T. Matsuoka
    • Organizer
      第32回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] サファイア基板上GaN薄膜の有機金属気相成長挙動の格子極性依存性2013

    • Author(s)
      吉野川伸雄,片山竜二(他5名、6番)
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川
    • Year and Date
      2013-03-28
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] 窒素δドープGaAs中の単一等電子トラップによる励起子分子発光の時間分解フォトルミネッセンス測定2013

    • Author(s)
      高宮健吾,八木修平,土方泰斗,望月敏光,吉田正裕,秋山英文,窪谷茂幸,片山竜二,尾鍋研太郎,矢口裕之
    • Organizer
      第74回応用物理学会学術講演会
    • Place of Presentation
      同志社大学田辺キャンパス
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Y立方晶AlNおよび高Al濃度立方晶AlGaNのRF-MBE成長2013

    • Author(s)
      角田雅弘,森川生,窪谷茂幸,片山竜二,矢口裕之,尾鍋研太郎
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学(神奈川)
    • Year and Date
      2013-03-28
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Presentation] Effect of c-plane Sapphire Substrate Miscut-angle on Indium Content of MOVPE-grown N-polar InGaN2013

    • Author(s)
      K. Shojiki, J.-H. Choi, H. Shindo, T. Kimura, T. Tanikawa, T. Hanada, R. Katayama, and T. Matsuoka
    • Organizer
      2013 JSAP-MRS Joint Symposia
    • Place of Presentation
      Kyoto, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Inサーファクタントによる(0001)GaNのMOVPE成長におけるステップフロー成長の促進2013

    • Author(s)
      逢坂崇,谷川智之,正直花奈子,木村健司,岩渕拓也,花田貴,片山竜二,松岡隆志
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] MOVPE成長N極性InGaNにおけるIn組成のc面サファイア基板微傾斜角依存性2013

    • Author(s)
      正直花奈,崔正焄,進藤裕文,木村健司,谷川智之,花田貴,片山竜二,松岡隆志
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] MOVPE成長–c面InGaN/GaN多重量子井戸構造における準安定相混在の抑制2013

    • Author(s)
      正直花奈子, 崔正焄, 岩渕拓也, 宇佐美徳隆, 谷川智之, 窪谷茂幸, 花田貴, 片山 竜二, 松岡 隆志
    • Organizer
      第68回応用物理学会東北支部学術講演会
    • Place of Presentation
      山形大学米沢キャンパス
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Influence of Mg-Doping on the Surface Morphology of (000-1) GaN/Sapphire Grown by Metalorganic Vapor Phase Epitaxy2013

    • Author(s)
      T. Tanikawa, T. Aisaka, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
    • Organizer
      10th Int. Conf. on Nitride Semicond. (ICNS-10)
    • Place of Presentation
      Washington DC, USA
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] mprovement of Surface Morphology in (000-1) GaN/Sapphire Grown by MOVPE with Indium Surfactant2013

    • Author(s)
      T. Aisaka, T. Tanikawa, T. Kimura, T. Iwabuchi, K. Shojiki, R. Katayama, T. Hanada, and T. Matsuoka
    • Organizer
      40th Intern. Symp. on Comp. Semcond. (ISCS2013)
    • Place of Presentation
      Kobe, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Evaluation and Solution of Metastable-Phase Inclusion in MOVPE-grown -c-plane InGaN/GaN Multiple Quantum Wells2013

    • Author(s)
      K. Shojiki, J. H. Choi, T. Iwabuchi, N. Usami, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, T. Matsuoka
    • Organizer
      10th Int. Conf. on Nitride Semicond. (ICNS-10)
    • Place of Presentation
      Washington DC, USA
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Enhancement of Surface Migration by Mg Doping in the Metalorganic Vapor Phase Epitaxy of (000-1) GaN/sapphire2013

    • Author(s)
      T. Tanikawa, T. Aisaka, T. Kimura, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
    • Organizer
      2013 JSAP-MRS Joint Symposia
    • Place of Presentation
      Kyoto, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Improvement of surface morphology in (000-1) GaN/Sapphire grown by MOVPE with indium surfactant2013

    • Author(s)
      T. Tanikawa, T. Aisaka, T. Kimura, T. Iwabuchi, K. Shojiki, R. Katayama, T. Hanada and T. Matsuoka
    • Organizer
      Conference on LED and its industrial application '13 (LEDIA '13)
    • Place of Presentation
      Yokohama, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Observation of Phase Separation on m-plane InGaN Films with Micro-vicinal surface by Micro-beam XRD2013

    • Author(s)
      K. Shojiki, T. Hanada, J. H. Choi, Y. Imai, S. Kimura, T. Shimada, T. Tanikawa, R. Katayama and T. Matsuoka
    • Organizer
      第32回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Nonlinear Optical Application of Periodic Polarity-inverted GaN Waveguide2013

    • Author(s)
      R. Katayama(他8名)
    • Organizer
      2013 JSAP-MRS Joint Symposia
    • Place of Presentation
      Kyoto
    • Year and Date
      2013-09-18
    • Invited
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] 窒化物半導体フォトニックナノ構造の量子光学応用2013

    • Author(s)
      片山竜二(他7名)
    • Organizer
      第5回窒化物半導体結晶成長講演会
    • Place of Presentation
      大阪
    • Year and Date
      2013-07-11
    • Invited
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Crystallographic Polarity Dependence of Surface Morphology Evolution during MOVPE Growth of GaN/Sapphire2013

    • Author(s)
      N. Yoshinogawa and R. Katayama(他5名、6番)
    • Organizer
      The 32nd Electron. Mater. Symp
    • Place of Presentation
      Shiga
    • Year and Date
      2013-07-11
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] サファイア基板上GaN薄膜のMOVPE成長挙動の格子極性依存性2013

    • Author(s)
      吉野川伸雄,岩渕拓也,正直花奈子,木村健司,谷川智之,片山竜二,松岡隆志
    • Organizer
      第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Investigation and Suppression of Metastable-phase Inclusion in MOVPE-grown –c-plane InGaN/GaN Multiple Quantum Wells2013

    • Author(s)
      K. Shojiki, J. H. Choi, T. Iwabuchi1, N. Usami, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama, and T. Matsuoka
    • Organizer
      KINKEN-WAKATE 2013 10th Materials Science School for Young Scientists
    • Place of Presentation
      Sendai, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] ヒロック形成にともなうm面InGaN薄膜のIn組成分布観察2013

    • Author(s)
      正直花奈子,花田貴,崔正焄,島田貴章,今井康彦,木村滋,谷川智之,片山竜二,松岡隆志
    • Organizer
      第74回応用物理学会学術講演会
    • Place of Presentation
      社大学田辺キャンパス
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] The improvement of N-polar GaN surface during MOVPE growth with indium surfactant2013

    • Author(s)
      T. Aisaka, T. Tanikawa, T. Kimura, K. Shojiki, T. Iwabuchi, T. Hanada, R. Katayama, and T. Matsuoka
    • Organizer
      2013 JSAP-MRS Joint Symposia
    • Place of Presentation
      Kyoto, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] 窒化物半導体フォトニックナノ構造の量子光学応用2013

    • Author(s)
      片山竜二、黒川周斉、吉野川伸雄、谷川智之、福原裕次郎、窪谷茂幸、尾鍋研太郎、松岡隆志
    • Organizer
      第5回 窒化物半導体結晶成長講演会
    • Place of Presentation
      大阪大学吹田キャンパス
    • Invited
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Effect of indium surfactant on MOVPE growth of N-polar GaN2013

    • Author(s)
      T. Aisaka, T. Tanikawa, T. Kimura, T. Iwabuchi, K. Shojiki, R. Katayama, T. Hanada and T. Matsuoka
    • Organizer
      第32回電子材料シンポジウム
    • Place of Presentation
      ラフォーレ琵琶湖
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Nonlinear Optical Application of Periodic Polarity-inverted GaN Waveguide2013

    • Author(s)
      R. Katayama, N. Yoshinogawa, S. Kurokawa, T. Tanikawa, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, and T. Matsuoka
    • Organizer
      2013 JSAP-MRS Joint Symposia
    • Place of Presentation
      Kyoto, Japan
    • Invited
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Enhancement of violet second harmonic generation in periodic polarity-inverted GaN waveguides2012

    • Author(s)
      R. Katayama(他5名)
    • Organizer
      Int. Conf. on Molecular Beam Epitaxy
    • Place of Presentation
      Nara
    • Year and Date
      2012-09-25
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Optical properties of the periodic polarity-inverted GaN waveguides2012

    • Author(s)
      R. Katayama(他7名)
    • Organizer
      SPIE Photonics WEST 2012
    • Place of Presentation
      San Francisco, USA
    • Year and Date
      2012-01-23
    • Invited
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Linear and nonlinear optical investigations of periodic polarity- inverted GaN waveguides2012

    • Author(s)
      R. Katayama(他5名)
    • Organizer
      Int. Conf. on Superlattices, nanostructures, and Nanodevices
    • Place of Presentation
      Dresden, Germany
    • Year and Date
      2012-07-26
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Influence of Sapphire Substrate Miscut Angle on Indium Content of MOVPE-grown InGaN Films2012

    • Author(s)
      K. Shojiki, H. Shindo, S. Y. Ji, V. S. Kumar, J. H. Choi, Y. H. Liu, T. Hanada, R. Katayama, and T. Matsuoka
    • Organizer
      4th Intern. Symp.on Growth of III- nitrides (ISGN-4)
    • Place of Presentation
      St. Petersburg, Russia
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Enhanced second harmonic generation from periodic polarity-inverted GaN waveguide2012

    • Author(s)
      R. Katayama, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, and T. Matsuoka
    • Organizer
      Int. Conf. on Superlattices, Nanostructures, and Nanodevices (ICSNN2012)
    • Place of Presentation
      Dresden, Germany
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Enhancement of violet second harmonic generation in periodic polarity-inverted GaN waveguides2012

    • Author(s)
      R. Katayama, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe and T. Matsuoka
    • Organizer
      17th Int. Conf. Molecular Beam Epitaxy
    • Place of Presentation
      Nara, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] 極性ワイドギャップ半導体フォトニックナノ構造の新規光機能2012

    • Author(s)
      片山竜二(他5名)
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      東京
    • Year and Date
      2012-03-15
    • Invited
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] 窒素δドープGaAs中の単一等電子トラップからの発光のフォトルミネッセンス励起分光測定2012

    • Author(s)
      高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Year and Date
      2012-09-12
    • Data Source
      KAKENHI-PROJECT-24360004
  • [Presentation] Biexciton Emission from Single Isoelectronic Traps Formed by Nitrogen-Nitrogen Pairs in GaAs2012

    • Author(s)
      K. Takamiya, T. Fukushima. S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe. R. Katayama, and H. Yaguchi
    • Organizer
      31st International Conference on the Physics of Semiconductors
    • Place of Presentation
      スイス連邦工科大学チューリッヒ校(スイス)
    • Year and Date
      2012-08-02
    • Data Source
      KAKENHI-PROJECT-24360004
  • [Presentation] Linear and nonlinear optical investigations of periodic polarity- inverted GaN waveguides2012

    • Author(s)
      R. Katayama(他5名)
    • Organizer
      4th Intern. Symp. on Growth of III-nitrides
    • Place of Presentation
      St. Petersburg, Russia
    • Year and Date
      2012-07-19
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Growth of Cubic AlN Films on MgO substrates by MBE2012

    • Author(s)
      M. Kakuda, S. Morikawa, S. Kuboya,R. Katayama, H. Yaguchi, K. Onabe,
    • Organizer
      GCOE International Sympsium on Physical Sciences Frontier
    • Place of Presentation
      東京
    • Year and Date
      2012-12-09
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Presentation]2012

    • Author(s)
      角田雅弘,森川生,窪谷茂幸,片山竜二,尾鍋研太郎
    • Organizer
      第4回窒化物半導体結晶成長講演会
    • Place of Presentation
      東京大学(東京)
    • Year and Date
      2012-04-27
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Presentation] Comparison of crystalline quality in InGaN grown on (0001) and (0001) GaN/Sapphire by metal-organic vapor phase epitaxy2012

    • Author(s)
      T. Tanikawa, R. Katayama and T. Matsuoka
    • Organizer
      Int. Workshop on Nitride Semiconductors (IWN2012)
    • Place of Presentation
      Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] MOVPE成長(0001) GaNのステップフロー成長の促進2012

    • Author(s)
      逢坂崇,正直花奈子,岩渕拓也,木村健司,谷川智之,花田貴,片山竜二,松岡隆志
    • Organizer
      第67回応用物理学会東北支部学術講演会
    • Place of Presentation
      東北大学
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Linear and nonlinear optical investigations of periodic polarity-inverted GaN waveguides2012

    • Author(s)
      R. Katayama, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, and T. Matsuoka
    • Organizer
      4th Intern. Symp.on Growth of III- nitrides (ISGN-4)
    • Place of Presentation
      St. Petersburg, Russia
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Violet-colored enhanced second harmonic generation from periodic polarity- inverted GaN waveguide2012

    • Author(s)
      R. Katayama, S. Kurokawa, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, T. Tanikawa, T. Hanada and T.Matsuoka
    • Organizer
      The 31st Electronic Materials Symposium (EMS-31)
    • Place of Presentation
      Shuzenji, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] (0001)および(000-1)面GaN上へMOVPE成長したInGaNの結晶品質比較2012

    • Author(s)
      谷川智之,片山竜二,松岡隆志
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] マイクロファセットができたm面InGaN薄膜のIn濃度分布観察2012

    • Author(s)
      花田貴,崔正焄,正直花奈子,今井康彦,木村 滋,島田貴章,片山竜二,松岡隆志
    • Organizer
      プレIWN2012
    • Place of Presentation
      東京大学
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Optical properties of the periodic polarity-inverted GaN waveguides2012

    • Author(s)
      Ryuji Katayama, Yujiro Fukuhara, Masahiro Kakuda, Shigeyuki Kuboya, Kentaro Onabe, Syusai Kurokawa, Naoto Fujii, Takashi Matsuoka
    • Organizer
      SPIE Photonics WEST 2012
    • Place of Presentation
      米国・サンフランシスコ(招待講演)
    • Year and Date
      2012-01-23
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] サファイア基板上GaN薄膜の有機金属気相成長初期過程における表面モフォロジーの格子極性依存性2012

    • Author(s)
      吉野川伸雄,岩渕拓也,正直花奈子,木村健司,谷川智之,片山竜二,松岡隆志
    • Organizer
      第67回応用物理学会東北支部学術講演会
    • Place of Presentation
      東北大学
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] 窒素δドープGaAsにおける単一等電子トラップからの励起子分子発光2012

    • Author(s)
      高宮健吾, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学(東京)
    • Year and Date
      2012-03-17
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] (0001)面、(000-1)面GaN上へMOVPE成長したInGaNの表面モフォロジーとIn取り込み2012

    • Author(s)
      谷川智之,正直花奈子,崔正焄,片山竜二,松岡隆志
    • Organizer
      第67回応用物理学会東北支部学術講演会
    • Place of Presentation
      東北大学
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] MOVPE成長N極性InGaNにおけるIn組成のc面サファイア基板微傾斜角依存性2012

    • Author(s)
      正直花奈子,崔正焄,進藤裕文,木村健司,谷川智之,花田貴,片山竜ニ,松岡隆志
    • Organizer
      第67回応用物理学会東北支部学術講演会
    • Place of Presentation
      東北大学
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Influence of sapphire substrate miscut angle on Indium content of MOVPE-grown InGaN films2012

    • Author(s)
      K. Shojiki, J. H. Choi, H. Shindo, S. Y. Ji, V. S. Kumar, Y. H. Liu, T. Hanada, R. Katayama and T. Matsuoka
    • Organizer
      The 31st Electronic Materials Symposium (EMS-31)
    • Place of Presentation
      Shuzenji, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Violet-colored enhanced second harmonic generation from periodic polarity-inverted GaN waveguide2012

    • Author(s)
      R. Katayama(他8名)
    • Organizer
      The 31st Electron. Mater. Symp
    • Place of Presentation
      Shizuoka
    • Year and Date
      2012-07-13
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Violet second harmonic generation from polarity inverted GaN waveguides2012

    • Author(s)
      R. Katayama, S. Kurokawa, Y. Fukuhara, M. Kakuda, S. Kuboya, K. Onabe, T. Tanikawa, T. Hanada and T. Matsuoka
    • Organizer
      Int. Workshop on Nitride Semiconductors (IWN2012)
    • Place of Presentation
      Sapporo, Japan
    • Invited
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Violet second harmonic generation from polarity inverted GaN waveguides2012

    • Author(s)
      R. Katayama(他8名)
    • Organizer
      Int. Workshop on Nitride Semiconductors
    • Place of Presentation
      Sapporo
    • Year and Date
      2012-10-18
    • Invited
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] 極性ワイドギャップ半導体フォトニックナノ構造の新規光機能2012

    • Author(s)
      片山竜二, 松岡隆志, 福原裕次郎, 角田雅弘, 窪谷茂幸, 尾鍋研太郎
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      東京・早稲田(招待講演)
    • Year and Date
      2012-03-15
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Enhancement of In-incorporation into InGaN by nitridation of sapphire substrate in MOVPE2012

    • Author(s)
      J. H. Choi, S. Kumar, K. Shojiki, T. Hanada, R. Katayama andT. Matsuoka
    • Organizer
      4th Intern. Symp.on Growth of III- nitrides (ISGN-4)
    • Place of Presentation
      St. Petersburg, Russia
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates2012

    • Author(s)
      R. G. Jin, S. Yagi, Y. Hijikata, S. Kuboya, K. Onabe, R. Katayama and H. Yaguchi
    • Organizer
      17th International Conference on Molecular Beam Epitaxy
    • Place of Presentation
      奈良県新公会堂(奈良県)
    • Year and Date
      2012-09-24
    • Data Source
      KAKENHI-PROJECT-24360004
  • [Presentation] Growth of cubic AlN films on MgO substrate via2-step cubic GaN buffer layer by RF-MBE2012

    • Author(s)
      M. Kakuda, S. Morikawa, S. Kuboya,R. Katayama, K. Onabe
    • Organizer
      31th Electronic Materials Symposium (EMS-31)
    • Place of Presentation
      伊豆(静岡)
    • Year and Date
      2012-07-11
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Presentation] MBE法によるGaAs(001)基板上へのErGaAs混晶の成長2012

    • Author(s)
      金日国, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Year and Date
      2012-09-12
    • Data Source
      KAKENHI-PROJECT-24360004
  • [Presentation] RF-MBEGrowth of cubic AlN on MgO(001) substrates via 2-step c-GaN buffer layer2012

    • Author(s)
      M. Kakuda, S. Morikawa, S. Kuboya, R. Katayama, K. Onabe
    • Organizer
      17th International Conference on Molecular Beam Epitaxy (MBE2012)
    • Place of Presentation
      奈良(奈良)
    • Year and Date
      2012-09-24
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Presentation] Study of In-composition of InGaN islands on m-plane GaN substrate using high-resolution microbeam XRD2012

    • Author(s)
      J.H. Choi, K. Shojiki, T. Shimada, T. Tanikawa, T. Hanada, R. Katayama, T. Matsuoka, Y. Imai and S. Kimura
    • Organizer
      Int. Workshop on Nitride Semiconductors (IWN2012)
    • Place of Presentation
      Sapporo, Japan
    • Data Source
      KAKENHI-PROJECT-23686010
  • [Presentation] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2011

    • Author(s)
      K.Takamiya, Y.Endo, T.Fukushima, S.Yagi, Y.Hijikata, T.Mochizuki, M.Yoshita, H.Akiyama, S.Kuboya, K.Onabe, R.Katayama, H.Yaguchi
    • Organizer
      7th International Conference on Processing & Manufacturing of Advanced Materials
    • Place of Presentation
      Quebec City Convention Centre (Quebec, Canada)(招待講演)
    • Year and Date
      2011-08-03
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] Biexciton Emission from Single Isoelectronic Traps in Nitrogen Atomic-Layey-Doped GaAs2011

    • Author(s)
      K.Takamiya, T.Fukushima, S.Yagi, Y.Hijikata, T.Mochizuki, M.Yoshita, H.Akiyama, S.Kuboya, K.Onabe, R.Katayama, H.Yaguchi
    • Organizer
      3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Place of Presentation
      International Academy Traunkirchen (Traunkirchen, Austria)
    • Year and Date
      2011-09-12
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] GaAs(110)基板上に作製した窒素δドープGaAsにおける等電子トラップからの発光特性評価2011

    • Author(s)
      高宮健吾, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(神奈川県)
    • Year and Date
      2011-03-25
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide2011

    • Author(s)
      K. Takamiya, Y. Endo, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H.Yaguchi
    • Organizer
      The 7th International Conference on Processing & Manufacturing of Advanced Materials
    • Place of Presentation
      Quebec City Convention Centre (Quebec,Canada)
    • Year and Date
      2011-08-03
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] Biexciton Emission from Single Is oelectronic Traps in Nitrogen Atomic-Layey-Doped GaAs2011

    • Author(s)
      K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, H. Yaguchi
    • Organizer
      The 3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Place of Presentation
      International Academy Traunkirchen (Traunkirchen, Austria)
    • Year and Date
      2011-09-12
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] Cubic III-nitrides: potential photonic materials (Invited)2011

    • Author(s)
      K. Onabe, S.Sanorpim, H. Kato, M.Kakuda, T. Nakamura, K. Nakamura, S.Kuboya, R. Katayama
    • Organizer
      SPIE Photonic West 2011
    • Place of Presentation
      San Francisco, CA,USA.
    • Year and Date
      2011-01-24
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Presentation] 窒素δドープGaAs(110)中の単一等電子トラップからの発光の偏光特性2011

    • Author(s)
      高宮健吾, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学(山形県)
    • Year and Date
      2011-08-30
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] Cubic III-nitrides : potential photonic materials2011

    • Author(s)
      K.Onabe, S.Sanorpim, H.Kato, M.Kakuda, T.Nakamura, K.Nakamura, S.Kuboya, R.Katayama
    • Organizer
      SPIE Photonic West 2011
    • Place of Presentation
      San Francisco, CA, USA(Invited)
    • Year and Date
      2011-01-24
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Presentation] 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光特性評価2010

    • Author(s)
      高宮健吾, 遠藤雄太, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, サノーピンサクンタム, 矢口裕之
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] RF-MBE法によるYSZ(001)基板上立方晶InN及びInGaNの結晶成長2010

    • Author(s)
      中村桂土、角田雅弘、石田崇、窪谷茂幸、片山竜二、尾鍋研太郎
    • Organizer
      2010年春季第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] 極低窒素濃度GaAsNのフォトリフレクタンススペクトル2010

    • Author(s)
      大久保航, 石川輝, 八木修平, 土方泰斗, 吉田貞史, 片山竜二, 尾鍋研太郎, 矢口裕之
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光特性評価2010

    • Author(s)
      高宮健吾, 遠藤雄太, 福島俊之, 星野真也, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, サノーピンサクンタム, 矢口裕之, サノーピンサクンタム, 矢口裕之
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎)
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] 窒素δドープGaAs中の等電子トラップを形成する窒素原子対配列に関する研究2010

    • Author(s)
      星野真也, 遠藤雄太, 福島俊之, 高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] RF-MBE法によるYSZ(001)基板上立方晶InN及びInGaNの結晶成長2010

    • Author(s)
      中村桂土, 角田雅弘, 石田崇, 窪谷茂幸, 片山竜二, 尾鍋研太郎
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学 (神奈川)
    • Year and Date
      2010-03-17
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] 様々な面方位基板上に作製した窒素δドープGaAs中の等電子トラップからの発光(III)2010

    • Author(s)
      福島俊之, 高宮健吾, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
    • Organizer
      第57回応用物理学関係連合講演会
    • Place of Presentation
      東海大学(神奈川県)
    • Year and Date
      2010-03-18
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] 極低窒素濃度GaAsNにおける窒素ペアからの発光の窒素濃度依存性2010

    • Author(s)
      石川輝, 八木修平, 土方泰斗, 吉田貞史, 岡野真人, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] 極低窒素濃度GaAsN中の等電子トラップからの発光に対する一軸応力の影響2010

    • Author(s)
      新井佑也, 遠藤雄太, 八木修平, 土方泰斗, 窪谷茂幸, 尾鍋研太郎, 片山竜二, 矢口裕之
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎)
    • Year and Date
      2010-09-14
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] Photoluminescence from single is oelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A2009

    • Author(s)
      T. Fukushima, M. Ito, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Okano, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe
    • Organizer
      The 14th International Conference on Modulated Semiconductor Structures
    • Place of Presentation
      神戸国際会議場 (兵庫県)
    • Year and Date
      2009-07-21
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009

    • Author(s)
      Q. T. Thieu, T. Nakagawa, Y. Seki, S. Kuboya, R. Katayama, K. Onabe
    • Organizer
      8th International Conference on Nitride Semiconductors (ICNS-8)
    • Place of Presentation
      Jeju, Korea.
    • Year and Date
      2009-10-20
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] MOVPE Growth of InN Films Using 1,1-dimethylhydrazine as a Nitrogen Precursor(Invited)2009

    • Author(s)
      ティユクァントウ、中川隆、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
    • Organizer
      Asia-Pacific Workshop on Widegap Semiconductors(APWS2009)
    • Place of Presentation
      Zhang Jia Jie, Hunan, China
    • Year and Date
      2009-05-25
    • Data Source
      KAKENHI-PUBLICLY-21016003
  • [Presentation] Movpe Growth and Optical Characterization of InGaAsN T-shaped Quantum Wires Lattice-Matched to GaAs2009

    • Author(s)
      P.Klangtakail, S.Sanorpim, R.Katayama, K.Onabe
    • Organizer
      8th International Conference on Nitride Semiconductors(ICNS-8)
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-20
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] MOVPE Growth of High Optical Quality InGaPN Layers on GaAs (001) Substrates2009

    • Author(s)
      D. Kaewket, S. Sanorpim, S. Tungasmita, R. Katayama, K. Onabe
    • Organizer
      8th International Conference on Nitride Semiconductors (ICNS-8)
    • Place of Presentation
      Jeju, Korea.
    • Year and Date
      2009-10-22
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長(3)2009

    • Author(s)
      ティユクァントウ、中川隆、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
    • Organizer
      2009年秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009

    • Author(s)
      Q.T.Thieu, T.Nakagawa, Y.Seki, S.Kuboya, R.Katayama, K.Onabe
    • Organizer
      28th Electronic Materials Symposium(EMS28)
    • Place of Presentation
      Biwako, Japan
    • Year and Date
      2009-07-08
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] 窒素δドープGaAs/AlGaAsヘテロ構造における等電子トラップからの発光2009

    • Author(s)
      高宮健吾, 遠藤雄太, 福島俊之, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山県・富山大学
    • Year and Date
      2009-09-09
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] Movpe Growth and Optical Characterization of InGaAsN T-shaped Quantum Wires Lattice-Matched to GaAs2009

    • Author(s)
      P. Klangtakai, S. Sanorpim, R. Katayama, K. Onabe
    • Organizer
      8th International Conference on Nitride Semiconductors (ICNS-8)
    • Place of Presentation
      Jeju, Korea.
    • Year and Date
      2009-10-20
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] InP(001)板上へのInPN薄膜のMOVPE成長2009

    • Author(s)
      関裕紀,窪谷茂幸,ティユクァントゥ,片山竜二,矢口裕之,尾鍋研太郎
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学
    • Year and Date
      2009-03-31
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] MOVPE Growth of High Optical Quality InGaPN Layers on GaAs(001)Substrates2009

    • Author(s)
      D.Kaewket, S.Sanorpim, S.Tungasmita, R.Katayama, K.Onabe
    • Organizer
      8th International Conference on Nitride Semiconductors(ICNS-8)
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-22
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009

    • Author(s)
      ティユクァントウ、中川隆、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
    • Organizer
      8th International Conference on Nitride Semiconductors(ICNS-8)
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-20
    • Data Source
      KAKENHI-PUBLICLY-21016003
  • [Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009

    • Author(s)
      Q. T. Thieu, T. Nakagawa, Y. Seki, S. Kuboya, R. Katayama, K. Onabe
    • Organizer
      28th Electronic Materials Symposium (EMS28)
    • Place of Presentation
      Biwako, Japan.
    • Year and Date
      2009-07-08
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] 様々な面方位基板上に作製した窒素δドープGaAs中の等電子トラップからの発光(III)2009

    • Author(s)
      福島俊之, 高宮健吾, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山県・富山大学
    • Year and Date
      2009-09-09
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長(3)2009

    • Author(s)
      ティユクァントウ、中川隆、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
    • Organizer
      2009年秋季第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PUBLICLY-21016003
  • [Presentation] Photoluminescence from single isoelectronic traps in nitrogen delta-dopedGaAs grown on GaAs(111)A2009

    • Author(s)
      福島俊之, M.Ito, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, S.Kuboys, 片山竜二, 尾鍋研太郎
    • Organizer
      The 14th International Conference on Modulated Semiconductor Structures
    • Place of Presentation
      兵庫県・神戸国際会議場
    • Year and Date
      2009-07-21
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009

    • Author(s)
      Q.T.Thieu, T.Nakagawa, Y.Seki, S.Kuboya, R.Katayama, K.Onabe
    • Organizer
      8th International Conference on Nitride Semiconductors(ICNS-8)
    • Place of Presentation
      Jeju, Korea
    • Year and Date
      2009-10-20
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] InP(001)基板上へのInPN薄膜のMOVPE成長2009

    • Author(s)
      関裕紀, 窪谷茂幸, ティユクァントゥ, 片山竜二, 矢口裕之, 尾鍋研太郎
    • Organizer
      第56回応用物理学関係連合講演会
    • Place of Presentation
      筑波大学 (茨城)
    • Year and Date
      2009-03-31
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] MOVPE growth of InN films by separate supply of TMIn and DMHy2009

    • Author(s)
      ティユクァントウ、中川隆、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
    • Organizer
      28th Electronic Materials Symposium(EMS28)
    • Place of Presentation
      Biwako, Japan
    • Year and Date
      2009-07-08
    • Data Source
      KAKENHI-PUBLICLY-21016003
  • [Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長 (3)2009

    • Author(s)
      テイユクァントウ, 中川隆, 関裕紀, 窪谷茂幸, 片山竜二, 尾鍋研太郎
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学 (富山)
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] 極低窒素濃度GaAsNのフォトルミネッセンス励起分光測定2009

    • Author(s)
      石川輝, 土方泰斗, 矢口裕之, 吉田貞史, 岡野真人, 吉田正裕, 秋山英文, 窪谷茂幸, 尾鍋研太郎, 片山竜二
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学(富山県)
    • Year and Date
      2009-09-09
    • Data Source
      KAKENHI-PROJECT-21360004
  • [Presentation] ラマン分光を用いたGaInAsN混晶の発光効率の変化に関する研究2008

    • Author(s)
      谷岡健太郎, 堀口歩, 土方泰斗, 矢口裕之, 吉田貞史, 片山竜二, 尾鍋研太郎, 吉田正裕, 秋山英文
    • Organizer
      2008年春季 第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学(千葉)
    • Year and Date
      2008-03-29
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長(2)2008

    • Author(s)
      ティュクァントウ、関裕紀、窪谷茂幸、片山竜二、尾鍋研太郎
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部工業大学
    • Year and Date
      2008-09-03
    • Data Source
      KAKENHI-PROJECT-19032002
  • [Presentation] InAsN薄膜の光学的特性2008

    • Author(s)
      窪谷茂幸,黒田正行,西尾晋,ティユクァントゥ,片山竜二,尾鍋研太郎
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部工業大学
    • Year and Date
      2008-09-03
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] Composition pulling effect in MOVPE growth of InGaAsN films on bulk InGaAs substrate2008

    • Author(s)
      S. Sanorpim, R. Katayama, S. Kuboya, K. Onabe
    • Organizer
      14th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE・XIV)
    • Place of Presentation
      Metz, France
    • Year and Date
      2008-06-04
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] InAsN薄膜の光学的特性2008

    • Author(s)
      窪谷茂幸, 黒田正行, 西尾晋, ティユクァントゥ, 片山竜二, 尾鍋研太郎
    • Organizer
      第69回応用物理学会学術講演会
    • Place of Presentation
      中部工業大学 (愛知)
    • Year and Date
      2008-09-03
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] Compositional pulling effect in MOVPE growth of InGaAsN films on bulk InGaAs substrate2008

    • Author(s)
      S. Sanorpim, R. Katayama, S. Kuboya, K. Onabe
    • Organizer
      14th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIV)
    • Place of Presentation
      Metz, France
    • Year and Date
      2008-06-04
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] ラマン分光を用いたGaInAsN混晶の発光効率の変化に関する研究2008

    • Author(s)
      谷岡健太郎, 堀口歩, 土方泰斗, 矢口裕之, 吉田貞史, 片山竜二, 尾鍋研太郎, 吉田正裕, 秋山英文
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学 (千葉)
    • Year and Date
      2008-03-29
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] MOVPE growth of InN films avoiding parasitic reactions of precursors, trimethylindium and 1, 1-dimethylhydrazine2008

    • Author(s)
      Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
    • Organizer
      International Workshop on Nitiride Semiconductors (IWN 2008)
    • Place of Presentation
      Montreux, Switzerland
    • Year and Date
      2008-10-06
    • Data Source
      KAKENHI-PROJECT-19032002
  • [Presentation] MOVPE growth of InN films using 1,1-dimethylhydrazine as the nitrogen source2008

    • Author(s)
      Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
    • Organizer
      14th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIV)
    • Place of Presentation
      Metz, France
    • Year and Date
      2008-06-03
    • Data Source
      KAKENHI-PROJECT-19032002
  • [Presentation] InAsN quantum dots grown by MOVPE2008

    • Author(s)
      S. Kuboya, Q. T. Thieu, S. Takahashi, F. Nakajima, R. Katayama, K. Onabe
    • Organizer
      Workshop on Frontier Optoelectronic Materials and Devices
    • Place of Presentation
      箱根(神奈川)
    • Year and Date
      2008-03-05
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] MOVPE growth of InN films using TMIn and DMHy as the precursors2008

    • Author(s)
      Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
    • Organizer
      28th Electronic Materials Symposium (EMS28)
    • Place of Presentation
      Shuzenji, Japan
    • Year and Date
      2008-07-10
    • Data Source
      KAKENHI-PROJECT-19032002
  • [Presentation] ジメチルヒドラジンを窒素原料としたInNのMOVPE成長2008

    • Author(s)
      ティユ クァン トウ、関 裕紀、窪谷 茂幸、片山 竜二、尾鍋 研太郎
    • Organizer
      2008年春季 第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学(千葉)
    • Year and Date
      2008-03-27
    • Data Source
      KAKENHI-PROJECT-19032002
  • [Presentation] MOVPE growth of InN films using 1,1-dimethylhydrazine as a nitrogen precursor2008

    • Author(s)
      Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
    • Organizer
      Second International Symposium on Growth of III-Nitrides
    • Place of Presentation
      修善寺(静岡)
    • Year and Date
      2008-07-07
    • Data Source
      KAKENHI-PROJECT-19032002
  • [Presentation] MOVPE Growth of InN films Using 1, 1-Dimethylhydrazine as a Nitrogen Precursor2008

    • Author(s)
      Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
    • Organizer
      2nd International Symposium on Growth of HI-Nitride (ISGN-2)
    • Place of Presentation
      Shuzenji, Japan
    • Year and Date
      2008-07-07
    • Data Source
      KAKENHI-PROJECT-19032002
  • [Presentation] GaAsN及びInAsN薄膜の水素・窒素混合キャリアガスを用いたMOVPE成長2008

    • Author(s)
      窪谷茂幸, 加藤宏盟, ティユクァントゥ, 片山竜二, 尾鍋研太郎
    • Organizer
      第55回応用物理学関係連合講演会
    • Place of Presentation
      日本大学 (千葉)
    • Year and Date
      2008-03-29
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] MOVPE growth of GaAsN and InAsN films by using N2 carrier gas2008

    • Author(s)
      S. Kuboya, H. Kato, Q. T. Thieu, R. Katayama and K. Onabe
    • Organizer
      28th Electronic Materials Symposium (EMS28)
    • Place of Presentation
      Shuzenji, Japan
    • Year and Date
      2008-07-10
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] MOVPE growth of InN films using TMIn and DMHy as the precursors2008

    • Author(s)
      Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
    • Organizer
      27th Electronic Materials Symposium (EMS-27)
    • Place of Presentation
      修善寺(静岡)
    • Year and Date
      2008-07-10
    • Data Source
      KAKENHI-PROJECT-19032002
  • [Presentation] MOVPE growth properties of high quality InAsN films2008

    • Author(s)
      S. Kuboya, Q. T. Thieu, H. Kato, F. Nakajima, R. Katayama, K. Onabe
    • Organizer
      14th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIV)
    • Place of Presentation
      Metz, France.
    • Year and Date
      2008-06-04
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] MOVPE growth of InN films using 1, 1-dimethylhydrazine as the nitrogen source2008

    • Author(s)
      Q.T. Thieu, Y. Seki, S. Kuboya, R. Katayama and K. Onabe
    • Organizer
      14th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIV)
    • Place of Presentation
      Metz, France
    • Year and Date
      2008-06-03
    • Data Source
      KAKENHI-PROJECT-19032002
  • [Presentation] MOVPE growth of GaAsN and InAsN films by using N_2 carrier gas2008

    • Author(s)
      S. Kuboya, H. Kato, Q. T. Thieu, R. Katayama, K. Onabe
    • Organizer
      27th Electronic Materials Symposium (EMS-27)
    • Place of Presentation
      修善寺(静岡)
    • Year and Date
      2008-07-10
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] MOVPE growth properties of high quahty InAsN films2008

    • Author(s)
      S. Kuboya, Q. T. Thieu, H. Kato, F. Nakajhna, R. Katayama, K. Onabe
    • Organizer
      14th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE・XIV)
    • Place of Presentation
      Metz, France
    • Year and Date
      2008-06-04
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] Photoluminescence properties of InAsN QDs grown by MOVPE2007

    • Author(s)
      S. Kuboya, Q. T. Thieu, S. Takahashi, F. Nakajima, R. Katayama, K. Onabe
    • Organizer
      26th Electronic Materials Symposium (EMS-26)
    • Place of Presentation
      琵琶湖 (滋賀)
    • Year and Date
      2007-07-04
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] MOVPE growth and photoluminescence properties of InAsN quantum dots2007

    • Author(s)
      S. Kuboya, S. Takahashi, Q. T. Thieu, F. Nakajima, R. Katayama, K. Onabe
    • Organizer
      7th International Conference on Nitride Semiconductors (ICNS-7)
    • Place of Presentation
      Las Vegas, USA.
    • Year and Date
      2007-09-19
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] 光照射によるGaInAsN混晶の発光効率向上に関する研究2007

    • Author(s)
      谷岡健太郎, 遠藤雄太, 伊藤正俊, 土方泰斗, 矢口裕之, 吉田貞史, 片山竜二, 尾鍋研太郎, 吉田正裕, 秋山英文
    • Organizer
      2007年秋季第68回応用物理学学術講演会
    • Place of Presentation
      北海道工業大学 (北海道)
    • Year and Date
      2007-09-07
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] 光照射によるGaInAsN混晶の発光効率向上に関する研究2007

    • Author(s)
      谷岡健太郎, 遠藤雄太, 伊藤正俊, 土方泰斗, 矢口裕之, 吉田貞史, 片山竜二, 尾鍋研太郎, 吉田正裕, 秋山英文
    • Organizer
      2007年秋季 第68回応用物理学学術講演会
    • Place of Presentation
      北海道工業大学(北海道)
    • Year and Date
      2007-09-07
    • Data Source
      KAKENHI-PROJECT-19360003
  • [Presentation] Polarity control of MOVPE-grown GaN on AlN/GaN templates

    • Author(s)
      J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama and T. Matsuoka
    • Organizer
      日本結晶成長学会ナノ構造・エピタキシャル成長分科会 第7回窒化物半導体結晶成長講演会
    • Place of Presentation
      東北大学片平さくらホール(宮城県仙台市)
    • Year and Date
      2015-05-07 – 2015-05-08
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] Investigation of Modal Dispersion in Nonlinear Optical TiOx/GaN Waveguide by m-line Spectroscopy

    • Author(s)
      N. Yoshinogawa, R. Katayama, K. Shojiki, T. Tanikawa, S. Kuboya and T. Matsuoka
    • Organizer
      The 33rd Electronic Materials Symposium
    • Place of Presentation
      La-Foret Shuzenji, Shizuoka, Japan
    • Year and Date
      2014-07-09 – 2014-07-11
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] Growth of Cubic AlN Films on MgO substrates by MBE

    • Author(s)
      M. Kakuda, S. Morikawa, S. Kuboya, R. Katayama, H. Yaguchi, K. Onabe
    • Organizer
      GCOE International Sympsium on Physical Sciences Frontier
    • Place of Presentation
      Tokyo, Japan
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Presentation] Growth of cubic AlN films on MgO substrate via 2-step cubic GaN buffer layer by RF-MBE

    • Author(s)
      M. Kakuda, S. Morikawa, S. Kuboya, R. Katayama, K. Onabe
    • Organizer
      31th Electronic Materials Symposium (EMS-31)
    • Place of Presentation
      Izu, Japan
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Presentation] 立方晶AlNおよび高Al濃度立方晶AlGaNのRF-MBE成長

    • Author(s)
      角田雅弘、森川生、窪谷茂幸、片山竜二、矢口裕之、尾鍋研太郎
    • Organizer
      2013年第60回応用物理学会春季学術講演会
    • Place of Presentation
      神奈川工科大学(厚木市)
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Presentation] 窒素δドープGaAs中の単一等電子トラップによる励起子分子発光の時間分解フォトルミネッセンス測定

    • Author(s)
      高宮健吾, 八木修平, 土方泰斗, 望月敏光, 吉田正裕, 秋山英文, 窪谷茂幸, 片山竜二, 尾鍋研太郎, 矢口裕之
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学(京都府)
    • Data Source
      KAKENHI-PROJECT-24360004
  • [Presentation] MOVPE Growth of GaN onto PLD-Grown AlN Interlayer on GaN Templates

    • Author(s)
      J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya, T. Hanada, R. Katayama and T. Matsuoka
    • Organizer
      The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA ’15)
    • Place of Presentation
      Pacifico Yokohama, Kanagawa, Japan
    • Year and Date
      2015-04-22 – 2015-04-23
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] RF-MBE Growth of cubic AlN on MgO(001) substrates via 2-step c-GaN buffer layer

    • Author(s)
      M. Kakuda, S. Morikawa, S. Kuboya, R. Katayama, K. Onabe
    • Organizer
      17th International Conference on Molecular Beam Epitaxy (MBE2012)
    • Place of Presentation
      Nara, Japan
    • Data Source
      KAKENHI-PROJECT-22360005
  • [Presentation] Excitation power dependence of the emission from various N-N pairs in N δ-doped GaAs

    • Author(s)
      K. Takamiya, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe, and H. Yaguchi
    • Organizer
      4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Place of Presentation
      UCLAコンファレンス・センター(アメリカ合衆国)
    • Data Source
      KAKENHI-PROJECT-24360004
  • [Presentation] 横型擬似位相整合AlN導波路を用いた深紫外第二高調波発生素子の設計

    • Author(s)
      三谷悠貴, 片山竜二, 劉陳燁, 正直花奈子, 谷川智之, 窪谷茂幸, 松岡隆志
    • Organizer
      日本結晶成長学会ナノ構造・エピタキシャル成長分科会 第7回窒化物半導体結晶成長講演会
    • Place of Presentation
      東北大学片平さくらホール(宮城県仙台市)
    • Year and Date
      2015-05-07 – 2015-05-08
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] Accurate Determination of Modal Dispersion in Nonlinear Optical TiOx/GaN Waveguide by Spectroscopic m-line Technique

    • Author(s)
      R. Katayama, N. Yoshinogawa, K. Shojiki, T. Tanikawa, S. Kuboya and T. Matsuoka
    • Organizer
      International Workshop on Nitride Semiconductors (IWN2014)
    • Place of Presentation
      Wrocław Congress Center, Wroclaw, Poland
    • Year and Date
      2014-08-24 – 2014-08-29
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] Design of the Transverse Quasi-Phase Matched AlN Waveguides for Deep-UV Second Harmonic Generation

    • Author(s)
      Y. Mitani, R. Katayama, J. Yoo, K. Shojiki, T. Tanikawa, S. Kuboya and T. Matsuoka
    • Organizer
      The 34th Electronic Materials Symposium
    • Place of Presentation
      La-Foret Biwako, Shiga, Japan
    • Year and Date
      2015-07-15 – 2015-07-17
    • Data Source
      KAKENHI-PROJECT-26600082
  • [Presentation] RF-MBE法による立方晶AlNの結晶成長

    • Author(s)
      角田雅弘、森川生、窪谷茂幸、片山竜二、尾鍋研太郎
    • Organizer
      第4回窒化物半導体結晶成長講演会
    • Place of Presentation
      東京大学(東京都目黒区)
    • Data Source
      KAKENHI-PROJECT-22360005
  • 1.  ONABE Kentaro (50204227)
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  • 2.  YAGUCHI Hiroyuki (50239737)
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  • 10.  谷川 智之 (90633537)
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  • 11.  呉 軍 (80313005)
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  • 13.  横山 弘之 (60344727)
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  • 14.  宇佐美 徳隆 (20262107)
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  • 15.  宮嶋 孝夫 (50734836)
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  • 16.  岩谷 素顕 (40367735)
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  • 17.  川原村 敏幸 (00512021)
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  • 18.  SAKUNTAM Sanorpim
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  • 19.  松岡 隆志
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  • 20.  花田 貴
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  • 21.  寒川 誠二
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    # of Collaborated Products: 1 results
  • 22.  村山 明宏
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  • 23.  三宅 秀人
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