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Maeda Tatsurou  前田 辰郎

… Alternative Names

MAEDA Tatsuro  前田 辰郎

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Researcher Number 40357984
Other IDs
  • ORCIDhttps://orcid.org/0000-0001-9092-6226
Affiliation (Current) 2025: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究主幹
Affiliation (based on the past Project Information) *help 2017 – 2025: 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究主幹
2016: 国立研究開発法人産業技術総合研究所, ナノエレクトロニクス研究部門, 主任研究員
2015: 国立研究開発法人産業技術総合研究所, その他部局等, 研究員
2012 – 2014: 独立行政法人産業技術総合研究所, ナノエレクトロニクス研究部門, 主任研究員
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials
Except Principal Investigator
Medium-sized Section 21:Electrical and electronic engineering and related fields / Electronic materials/Electric materials / Basic Section 30010:Crystal engineering-related / Crystal engineering
Keywords
Principal Investigator
ハフニウム窒化物 / 窒化膜ゲートスタック / 窒化ハフニウム / スパッタリング / 窒化膜 / 高移動度チャネル材料 / 非酸化物 / 窒化物 / ゲートスタック / ゲルマニウム / 高移動度チャネル … More
Except Principal Investigator
… More 真空デバイス / フォトミキシング / MOSFET / ユニポーラーレーザー / Γ点バレー占有 / 量子協奏 / 音響フォノン / Geナノシート / THz級電磁波 / トランジスタ / 光電変換 / フォトダイオード / パルス波 / 空間電子走行 / テラヘルツ波発生 / アレー集積 / パルスビーム / 真空フォトダイオード / テラヘルツ波 / 光電変換デバイス / III-V半導体 / III-V族半導体 / III-V / Ge / 結晶ひずみ / 移動度 / 3次元集積 / III-V族化合物半導体 / ゲルマニウム / 赤外透過率 / 飽和溶融帯移動法 / シリコンゲルマニウム / 電子材料 / 結晶成長 / SiGe / エピタキシャル / マイクロ・ナノデバイス / 半導体物性 / Ⅲ-Ⅴ族化合物半導体 / エピタキシャル成長 / 表面・界面物性 / Ⅲ-Ⅴ族化合物半導体 / 電子・電気材料 Less
  • Research Projects

    (7 results)
  • Research Products

    (84 results)
  • Co-Researchers

    (23 People)
  •  真空光トランジスタの創成と超高周波電磁波発生

    • Principal Investigator
      加藤 和利
    • Project Period (FY)
      2024 – 2026
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Review Section
      Medium-sized Section 21:Electrical and electronic engineering and related fields
    • Research Institution
      Kyushu University
  •  電子・フォノン・光の量子協奏がもたらす通信波長帯IV族半導体レーザー

    • Principal Investigator
      深津 晋
    • Project Period (FY)
      2023 – 2025
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 30010:Crystal engineering-related
    • Research Institution
      The University of Tokyo
  •  Creation of free-space electron-traveling photodiodes and realization of terahertz-wave pulsed beams

    • Principal Investigator
      Kato Kazutoshi
    • Project Period (FY)
      2020 – 2022
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Review Section
      Medium-sized Section 21:Electrical and electronic engineering and related fields
    • Research Institution
      Kyushu University
  •  Precise structure control of 3-dimensional integration CMOS using high mobility materials through layer transfer

    • Principal Investigator
      Takagi Shinichi
    • Project Period (FY)
      2017 – 2021
    • Research Category
      Grant-in-Aid for Scientific Research (S)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      The University of Tokyo
  •  High quality bulk-SiGe single-crystal growth methods for high-speed CPU

    • Principal Investigator
      Arai Yasutomo
    • Project Period (FY)
      2015 – 2018
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Crystal engineering
    • Research Institution
      Japan Aerospace EXploration Agency
  •  Valence-band engineering and interface-dipole control for realizing III-V pMOSFET

    • Principal Investigator
      YASUDA Tetsuji
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      National Institute of Advanced Industrial Science and Technology
  •  Study of all nitride gate stack with Metal and Insulator HfNx for high mobility channelPrincipal Investigator

    • Principal Investigator
      MAEDA Tatsuro
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      National Institute of Advanced Industrial Science and Technology

All 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 Other

All Journal Article Presentation

  • [Journal Article] Surface reaction via cyclic HI and O2 plasma treatments for Ge digital dry etching2022

    • Author(s)
      H. Ishii, W. H. Chang, H. Ishii, M. Ke, and T. Maeda
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 61

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Journal Article] Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure2022

    • Author(s)
      W. H. Chang, H. -W. Wan, Yi. -T. Cheng, Y. -H. G. Lin, T. Irisawa, H Ishii, J. Kwo, M. Hong, and T. Maeda
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 61 Issue: SC Pages: SC1024-SC1024

    • DOI

      10.35848/1347-4065/ac3fca

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Journal Article] Layer Transfer Technology for Stacked Multi-Channel Semiconductor-on-Insulator Platform2021

    • Author(s)
      W. H. Chang, T.-Z. Hong, P.-J. Sung, T. Irisawa, H. Ishii1, Y.-J. Lee and T. Maeda
    • Journal Title

      ECS Transactions

      Volume: 102(4) Issue: 4 Pages: 17-26

    • DOI

      10.1149/10204.0017ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Journal Article] High and broadband sensitivity front- side illuminated InGaAs photo field- effect transistors (photoFETs) with SWIR transparent conductive oxide (TCO) gate2021

    • Author(s)
      T. Maeda, K. Ohishi, H. Ishii, W. H. Chang, T. Shimizu, A. Endo, H. Fujisiro and T. Koida
    • Journal Title

      Appl. Phys. Lett.

      Volume: 119 Issue: 19 Pages: 192101-192101

    • DOI

      10.1063/5.0065776

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H06148, KAKENHI-PROJECT-20K05339
  • [Journal Article] SWIR Detection of Front Side Illumination InGaAs PhotoFETs on Si Substrate through Layer Transfer Technology2021

    • Author(s)
      OISHI Kazuaki、ISHII Hiroyuki、CHANG Wen-Hsin、SHIMIZU Tetsuji、ISHII Hiroto、FUJISHIRO Hiroki、ENDOH Akira、MAEDA Tatsuro
    • Journal Title

      Vacuum and Surface Science

      Volume: 64 Issue: 2 Pages: 74-79

    • DOI

      10.1380/vss.64.74

    • NAID

      130007985482

    • ISSN
      2433-5835, 2433-5843
    • Year and Date
      2021-02-10
    • Language
      Japanese
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Journal Article] Optical study of electron and acoustic phonon confinement in ultrathin-body germanium-on-insulator nanolayers2021

    • Author(s)
      V. Poborchii, J. Groenen, P. I. Geshev, J. Hattori, W. H. Chang, H. Ishii, T. Irisawa, and T. Maeda
    • Journal Title

      Nanoscale

      Volume: 13 Issue: 21 Pages: 9686-9697

    • DOI

      10.1039/d1nr01355f

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Journal Article] Spectral Responsivity Characteristics of Front‐Side Illumination InGaAs PhotoFETs on Si2020

    • Author(s)
      O. Ohishi, H. Ishii, W. H. Chang, H. Ishii, A. Endo, H. Fujisiro and T. Maeda
    • Journal Title

      Phys. Status Solidi A

      Volume: 218(3) Issue: 3

    • DOI

      10.1002/pssa.202000439

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Journal Article] Performance and reliability improvement in Ge(100) nMOSFETs through channel flattening process2020

    • Author(s)
      W. H. Chang, T. Irisawa, W. Mizubayashi, H. Ishii, and T. Maeda
    • Journal Title

      Solid-State Electronics

      Volume: 169 Pages: 107816-107816

    • DOI

      10.1016/j.sse.2020.107816

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-19K15053, KAKENHI-PROJECT-17H06148
  • [Journal Article] (Invited) Epitaxial Growth of Ge/III-V Films and Hetero-Layer Lift-off for Ultra-Thin GeOI Fabrication2020

    • Author(s)
      Maeda Tatsuro、Irisawa Toshifumi、Ishii Hiroyuki、Chang Wen Hsin
    • Journal Title

      ECS Transactions

      Volume: 98 Issue: 5 Pages: 157-167

    • DOI

      10.1149/09805.0157ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Journal Article] InGaAs photo field-effect-transistors (PhotoFETs) on half-inch Si wafer using layer transfer technology2020

    • Author(s)
      Maeda Tatsuro、Ishii Hiroyuki、Chang Wen Hsin、Shimizu Tetsuji、Ishii Hiroto、Ohishi Kazuaki、Endoh Akira、Fujishiro Hiroki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 59 Issue: SG Pages: SGGE03-SGGE03

    • DOI

      10.7567/1347-4065/ab5b44

    • NAID

      210000157638

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Journal Article] Physical Mechanisms of Mobility Enhancement in Ultrathin Body GeOI pMOSFETs Fabricated by HEtero-Layer-Lift-Off Technology2018

    • Author(s)
      W. H. Chang, T. Irisawa, H. Ishii, N. Uchida and T. Maeda
    • Journal Title

      IEEE Transactions on Electron Devices

      Volume: 66 Issue: 3 Pages: 1182-1188

    • DOI

      10.1109/ted.2019.2895349

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Journal Article] Ultra-thin germanium-tin on insulator structure through direct bonding technique2018

    • Author(s)
      T. Maeda, W. H. Chang, T. Irisawa, H. Ishii, H. Oka, M. Kurosawa, Y. Imai, O. Nakatsuka and N. Uchida
    • Journal Title

      Semiconductor Science and Technology

      Volume: 33 Issue: 12 Pages: 124002-124002

    • DOI

      10.1088/1361-6641/aae620

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H06148, KAKENHI-PROJECT-17H04919
  • [Journal Article] High performance UTB GeOI n and pMOSFETs featuring HEtero-Layer-Lift-Off (HELLO) technology2018

    • Author(s)
      W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, H. Ota, H. Takagi, Y. Kurashima, N. Uchida, and T. Maeda
    • Journal Title

      ECS Transactions

      Volume: 86 Issue: 10 Pages: 25-34

    • DOI

      10.1149/08610.0025ecst

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Journal Article] Si1-XGeX bulk single crystals for substrates of electronic devices2017

    • Author(s)
      Kyoichi Kinoshita,Yasutomo Arai, Tatsuro Maeda, Osamu Nakatsuka
    • Journal Title

      Materials Science in Semiconductor Processing

      Volume: 70 Pages: 12-16

    • DOI

      10.1016/j.mssp.2016.10.012

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15K04671
  • [Journal Article] First Experimental Observation of Channel Thickness Scaling Induced Electron Mobility Enhancement in UTB-GeOI nMOSFETs2017

    • Author(s)
      W.-H. Chang, T. Irisawa, H. Ishii, H. Hattori, H. Ota, H. Takagi, Y. Kurashima, N. Uchida, and T. Maeda
    • Journal Title

      IEEE Trans. Electron Devices

      Volume: 64 Issue: 11 Pages: 4615-4621

    • DOI

      10.1109/ted.2017.2756061

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Journal Article] Hole Hall mobility of SiGe alloys grown by the traveling liquidus-zone method2015

    • Author(s)
      Tatsuro Maeda, Hiroyuki Hattori, Wen Hsin Chang, Yasutomo Arai and Kyoichi Kinoshita
    • Journal Title

      Applied physics letters

      Volume: 107 Issue: 15 Pages: 152104-152104

    • DOI

      10.1063/1.4933330

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-15K04671
  • [Journal Article] Effects of HCl treatment and predeposition vacuum annealing on Al2O3/GaSb/GaAs metal–oxide–semiconductor structures2015

    • Author(s)
      Takahiro Gotow, Sachie Fujikawa, Hiroki I. Fujishiro, Mutsuo Ogura, Tetsuji Yasuda, and Tatsuro Maeda
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 54 Issue: 2 Pages: 021201-021201

    • DOI

      10.7567/jjap.54.021201

    • NAID

      210000144768

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24246058
  • [Journal Article] 金属性HfN/絶縁性HfNxによる全窒化膜Geゲートスタックの研究2014

    • Author(s)
      三浦 脩, 田中 正俊, 安田 哲二, 前田 辰郎
    • Journal Title

      第19回ゲートスタック研究会(主催 応用物理学会薄膜・表面物理分科会,シリコンテクノロジー分科会)

      Volume: 19 Pages: 163-166

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560390
  • [Journal Article] Solid phase epitaxy of GeSn alloys on silicon and integration in MOSFET devices2014

    • Author(s)
      Ruben R. Lieten, Tatsuro Maeda, Jin Won Seo, Wipakorn Jevasuwan, Hiroyuki Hattori, Noriyuki Uchida, Shu Miura, Masatoshi Tanaka, Claudia Fleischmanna, Andre Vantomme, Brett C. Johnson, Jean-Pierre Locquet
    • Journal Title

      ECS Transactions

      Volume: 64 Pages: 149-160

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560390
  • [Journal Article] 真空アニール法がAl2O3/GaSb MOS界面に与える影響2013

    • Author(s)
      後藤高寛, 藤川紗千恵, 藤代博, 小倉睦郎, 安田哲二, 前田辰郎
    • Journal Title

      電子情報通信学会技術研究報告

      Volume: 113 Pages: 37-42

    • Data Source
      KAKENHI-PROJECT-24246058
  • [Journal Article] 窒素組成制御による 金属性HfN/絶縁性HfNx/Ge MIS構造の研究2013

    • Author(s)
      三浦 脩, 田中 正俊, 安田 哲二, 前田 辰郎
    • Journal Title

      第18回ゲートスタック研究会

      Volume: 18 Pages: 159-162

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24560390
  • [Presentation] HI/O2プラズマを用いた常温でのGeサイクルドライエッチングの検討2022

    • Author(s)
      大石和明、石井寛仁、張文馨、石井裕之、遠藤聡、藤代博記、前田辰郎
    • Organizer
      第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] In2O3系近赤外域透明導電性酸化膜ゲートを用いた表面照射型InGaAs PhotoFETsの特性評価2022

    • Author(s)
      大石和明、石井寛仁、張文馨、石井裕之、遠藤聡、藤代博記、前田辰郎
    • Organizer
      第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] In2O3系近赤外域透明導電膜ゲートを用いた InGaAs PhotoFETsの動作実証2022

    • Author(s)
      大石和明、石井寛仁、張文馨、石井裕之、遠藤聡、藤代博記、前田辰郎
    • Organizer
      電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理―(第27回研究会)
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] Heterogeneous material integration by layer transfer technology2021

    • Author(s)
      T. Maeda
    • Organizer
      IEEE Electron Devices Technology and Manufacturing (EDTM) Conference
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] UTB-GeOI の量子化準位の顕微フォトリフレクタンス測定2021

    • Author(s)
      公平拓見、安武裕輔、張文馨、入沢寿史、石井裕之、前田辰郎、深津晋
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] 異種半導体材料の積層化およびデバイス集積化技術2021

    • Author(s)
      前田辰郎
    • Organizer
      第5回3次元積層半導体量子イメージセンサ研究会
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] 寄生抵抗を考慮した近赤外InGaAs PhotoFETsの感度評価2021

    • Author(s)
      大石和明、石井寛仁、張文馨、石井裕之、遠藤聡、藤代博記、前田辰郎
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] Low Thermal Budget Epitaxial Lift Off for Ge (111)-on-Insulator Structure2021

    • Author(s)
      W. H. Chang, H. -W. Wan, Yi. -T. Cheng, Y. -H. G. Lin, T. Irisawa, H Ishii, J. Kwo, M. Hong, and T. Maeda
    • Organizer
      53rd International Conference on Solid State Devices and Materials (SSDM)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] 近赤外域透明導電性酸化膜ゲートによる表面照射型InGaAs PhotoFETs2021

    • Author(s)
      大石和明、石井寛仁、張文馨、石井裕之、遠藤聡、藤代博記、前田辰郎
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] Surface reaction via cyclic HI and O2 plasma treatments for Ge digital dry etching2021

    • Author(s)
      H. Ishii, W. H. Chang, H. Ishii, M. Ke, and T. Maeda
    • Organizer
      34th International Microprocesses and Nanotechnology Conference (MNC)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] エピタキシャルリフトオフ(ELO)法によるGeOI(111)構造の作成2021

    • Author(s)
      W. H. Chang, H. -W. Wan, Yi. -T. Cheng, Y. -H. G. Lin, T. Irisawa, H Ishii, J. Kwo, M. Hong, and T. Maeda
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] Layer Transfer Technology for Stacked Multi-Channel Semiconductor-on-Insulator Platform2021

    • Author(s)
      W. H. Chang, T.-Z. Hong, P.-J. Sung, T. Irisawa, H. Ishii1, Y.-J. Lee and T. Maeda
    • Organizer
      239th Electrochemical Society (ECS) Meeting
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] 異種半導体転写によるヘテロジーニアスインテグレーション2020

    • Author(s)
      前田辰郎
    • Organizer
      SSISフォーラム(一般社団法人半導体産業人協会)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] Advanced Layer Transfer Technology of post-Si Materials for Heterogeneous Integration2020

    • Author(s)
      T. Maeda, T. Irisawa, H. Ishii, and W. H. Chang
    • Organizer
      4th IEEE Electron Device Technology and Manufacturing (EDTM) Conference
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] Ultrathin-body GeOI の円偏光フォトルミネッセンス2020

    • Author(s)
      公平拓見、安武裕輔、張文馨、入沢寿史、石井裕之、内田紀行、前田辰郎、深津晋
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] Layer transfer technology for heterogeneous material integration2020

    • Author(s)
      T. Maeda
    • Organizer
      Symposia on VLSI Technology and Circuits, Short Course
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] Ultrathin-body GeOI における量子閉じ込め電子ラマン散乱2020

    • Author(s)
      公平拓見、安武裕輔、張文馨、入沢寿史、石井裕之、内田紀行、前田辰郎、深津晋
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] Y2O3/Ge pMOSFETsにおけるGe表面清浄化プロセスの検討2020

    • Author(s)
      石井寛仁,張文馨, 石井裕之, 森田行則,遠藤聡, 藤代博記,前田辰郎
    • Organizer
      SATテクノロジー・ショーケース2020
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] Advanced Layer Transfer Technology of post-Si Materials for Heterogeneous Integration2020

    • Author(s)
      T. Maeda, T. Irisawa, H. Ishii, and W. H. Chang
    • Organizer
      4th IEEE Electron Device Technology and Manufacturing (EDTM) Conference 2020
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] Geチャネル平坦化プロセスにおけるGe nMOSFETsの面方位依存性2020

    • Author(s)
      石井寛仁,張文馨, 入沢寿史, 石井裕之, 水林亘,前田辰郎
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] Ge表面清浄プロセスを用いたY2O3/Ge pMOSFETsの作製と評価2020

    • Author(s)
      石井寛仁,張文馨, 石井裕之, 森田行則,遠藤聡, 藤代博記,前田辰郎
    • Organizer
      「電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理―」 (第25回研究会)
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] Epitaxial Growth of Ge/III-V Films and Hetero-Layer Lift-Off for Ultra-Thin GeOI Fabrication2020

    • Author(s)
      T. Maeda, T. Irisawa, H. Ishii, and W. H. Chang
    • Organizer
      PRiME 2020 G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 9
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] Performance and Reliability Improvement in Ge nMOSFETs with Different Surface Orientation through Channel Flattening Process2020

    • Author(s)
      W. H. Chang, T. Irisawa, W. Mizubayashi, H. Ishii, and T. Maeda
    • Organizer
      4th IEEE Electron Device Technology and Manufacturing (EDTM) Conference 2020
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] 転写技術を用いたSi基板上の表面照射型InGaAs PhotoFETの実証2020

    • Author(s)
      大石和明,石井寛仁,張文馨, 石井裕之, 清水鉄司,遠藤聡, 藤代博記,前田辰郎
    • Organizer
      「電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理―」 (第25回研究会)
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] Si 基板上表面照射型 InGaAs PhotoFET の近赤外域分光感度特性2020

    • Author(s)
      大石和明、石井寛仁、張文馨、石井裕之、遠藤聡、藤代博記、前田辰郎
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] Performance and Reliability Improvement in Ge nMOSFETs with Different Surface Orientation through Channel Flattening Process2020

    • Author(s)
      W. H. Chang, T. Irisawa, W. Mizubayashi, H. Ishii, and T. Maeda
    • Organizer
      4th IEEE Electron Device Technology and Manufacturing (EDTM) Conference
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] Ge清浄表面からのY2O3/Ge pMOSFETsの作製2019

    • Author(s)
      石井寛仁,張文馨, 石井裕之, 森田行則,遠藤聡, 藤代博記,前田辰郎
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] デバイスの三次元化とその課題2019

    • Author(s)
      前田辰郎
    • Organizer
      日本学術振興会先端ナノデバイス・材料テクノロジー第151委員会第4回研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] 新しいⅣ族半導体のトランスファー&ビルトによる新機能集積技術2019

    • Author(s)
      前田辰郎
    • Organizer
      科学技術振興機構新技術説明会
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] Impact of Channel Flattening Process on Device Performance of Ge nMOSFETs with Different Surface Orientations2019

    • Author(s)
      W. H. Chang, T. Irisawa, H. Ishii, N. Uchida and T. Maeda
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] Germanium Layer Transfer with Low Temperature Direct Bonding and Epitaxial Lift-off Technique for Ge-based monolithic 3D integration2019

    • Author(s)
      T. Maeda, W. H. Chang, T. Irisawa, H. Ishii, Y. Kurashima, H. Takagi and N. Uchida
    • Organizer
      Silicon Nanoelectronics Workshop (SNW)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] InGaAs photo field-effect-transistors (PhotoFETs) on Half-inch Si Wafer Using Layer Transfer Technology2019

    • Author(s)
      T. Maeda, H. Ishii, W. H. Chang, T. Shimizu, H. Ishii, O. Ohishi, A. Endo and H. Fujisiro
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] モノリシック3次元CMOS集積に向けたGe-On-Insulator技術2019

    • Author(s)
      前田 辰郎, 張 文馨, 入沢 寿史, 石井 裕之, 倉島優一、髙木秀樹、内田 紀行
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] 高移動度半導体薄膜接合転写とデバイス応用2019

    • Author(s)
      前田辰郎
    • Organizer
      日本学術振興会 接合界面創成技術第191委員会第23回講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] 転写技術による表面照射型近赤外InGaAs PhotoFET の開発2019

    • Author(s)
      大石和明,石井寛仁,張文馨, 石井裕之, 清水鉄司,遠藤聡, 藤代博記,前田辰郎
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] Ge基板の平坦化RTAを用いたin-situ Ge MOS構造の作製2018

    • Author(s)
      石井 寛仁,張 文馨, 石井 裕之, 森田行則,遠藤聡, 藤代博記,前田 辰郎
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] HEtero-Layer-Lift-Off (HELLO) technology for enhanced hole mobility in UTB GeOI pMOSFETs2018

    • Author(s)
      W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, N. Uchida and T. Maeda
    • Organizer
      2018 International Symposium on VLSI Technology, Systems and Applications
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] Significant Performance Enhancement of UTB GeOI pMOSFETs by Advanced Channel Formation Technologies2018

    • Author(s)
      W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, N. Uchida and T. Maeda
    • Organizer
      Symposia on VLSI Technology
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] High performance UTB GeOI n and pMOSFETs featuring HEtero-Layer-Lift-Off (HELLO) technology2018

    • Author(s)
      W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, H. Ota, H. Takagi, Y. Kurashima, N. Uchida, and T. Maeda
    • Organizer
      AiMES 2018 (ECS and SMEQ Joint International Meeting), Symposium G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] UTB-GeOI構造の超平坦化による正孔移動度向上2018

    • Author(s)
      張 文馨, 入沢 寿史, 石井 裕之, 内田 紀行, 前田 辰郎
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] チャネル形成技術の高度化による極薄GeOI pMOSFETsの性能向上2018

    • Author(s)
      張 文馨, 入沢 寿史, 石井 裕之, 内田 紀行, 前田 辰郎
    • Organizer
      第210回シリコンテクノロジー研究集会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] モノリシック3D CMOS に向けたUTB-GeOI 構造の開発2018

    • Author(s)
      前田 辰郎, 張 文馨, 入沢 寿史, 石井 裕之, 内田 紀行
    • Organizer
      第24回電子デバイス界面テクノロジー研究会
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] Ge系デバイスのヘテロジニアスインテグレーション技術2018

    • Author(s)
      前田辰郎
    • Organizer
      電子情報通信学会 システムナノ技術に関する時限研究専門委員会第3回研究会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] High quality UTB GeOI by HEtero-Layer-Lift-Off (HELLO) technology for future Ge CMOS application2018

    • Author(s)
      W.-H. Chang, T. Irisawa, H. Ishii, H. Hattori, Hi. Ota, H. Takagi, Y. Kurashima, N. Uchida, T. Maeda
    • Organizer
      第65回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] Ultra-thin germanium-tin on insulator structure through direct bonding technique2018

    • Author(s)
      T. Maeda, W. H. Chang, T. Irisawa, H. Ishii, H. Oka, M. Kurosawa, Y. Imai, O. Nakatsuka and N. Uchida
    • Organizer
      ISTDM/ICSI 2018
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] UTB-GeOIチャネル構造における裏面Siパッシベーションの効果2018

    • Author(s)
      張 文馨, 入沢 寿史, 石井 裕之, 内田 紀行, 前田 辰郎
    • Organizer
      第66回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] Electron and Acoustic Phonon Confinement in Ultrathin-Body Ge on Insulator2018

    • Author(s)
      V. Poborchii, W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, N. Uchida, J. Groenen, P. Geshev and T. Maeda
    • Organizer
      2018 International Conference on Solid State Devices and Materials (SSDM)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] 超薄膜ゲルマニウムのバンド構造2018

    • Author(s)
      前田辰郎, 張文馨, 入沢寿史, 石井裕之, 服部浩之, 内田紀行, 山内 淳
    • Organizer
      第65回応用物理学会春季学術講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] First Experimental Observation of Channel Thickness Scaling Induced Electron Mobility Enhancement in UTB-GeOI nMOSFETs2017

    • Author(s)
      W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, H. Ota, H. Takagi, Y. Kurashima, N. Uchida and T. Maeda
    • Organizer
      Sympia on VLSI technology
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-17H06148
  • [Presentation] TLZ法を利用した均一組成バルクSiGe結晶(2)移動度評価2016

    • Author(s)
      前田辰郎, 服部浩之、Wen Hsin Chang, 木下恭一、荒井康智
    • Organizer
      応用物理学会年会
    • Place of Presentation
      東京工業大学
    • Year and Date
      2016-03-19
    • Data Source
      KAKENHI-PROJECT-15K04671
  • [Presentation] Homogeneous bulk SiGe crystals grown on board the International Space Station2016

    • Author(s)
      Y. Arai, K. Kinoshita, T. Tsukada, K. Abe, S. Sumioka,, M. Kubo, S. Baba, T. Maeda, Y. Inatomi
    • Organizer
      ICCGE-18
    • Place of Presentation
      名古屋国際会議場
    • Year and Date
      2016-08-07
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K04671
  • [Presentation] Hall hole mobility of single crystalline random SiGe alloys2015

    • Author(s)
      Tatsuro Maeda, Hiroyuki Hattori, Wen Hsin Chang, Yasutomo Arai and Kyoichi Kinoshita
    • Organizer
      9th International Conference on Silicon Epitaxy and Heterostructures
    • Place of Presentation
      Montreal, Quebec, Canada
    • Year and Date
      2015-05-17
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15K04671
  • [Presentation] Al2O3/GaSb MOS 界面構造における絶縁膜堆積前処理の検討2014

    • Author(s)
      後藤高寛, 藤川紗千恵, 藤代博記, 小倉睦郎, 安田哲二, 前田辰郎
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス
    • Data Source
      KAKENHI-PROJECT-24246058
  • [Presentation] Demonstration of Ni-GaSb metal S/D GaSb pMOSFETs with vacuum annealing on GaAs substrates2013

    • Author(s)
      Takahiro Goto, Sachie Fujikawa, Hiroki Fujishiro, Mutsuo Ogura, Tetsuji Yasuda, Tatsuro Maeda
    • Organizer
      44th IEEE Semiconductor Interface Specialists Conference
    • Place of Presentation
      Arlington, VA, USA
    • Data Source
      KAKENHI-PROJECT-24246058
  • [Presentation] GaSbショットキー接合型メタルS/D pMOSFETsの動作実証2013

    • Author(s)
      後藤高寛, 藤川紗千恵, 藤代博記, 小倉睦郎, 安田哲二, 前田辰郎
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学
    • Data Source
      KAKENHI-PROJECT-24246058
  • [Presentation] 真空アニール法がAl2O3/GaSb MOS界面に与える影響2013

    • Author(s)
      後藤高寛, 藤川紗千恵, 藤代博記, 小倉睦郎, 安田哲二, 前田辰郎
    • Organizer
      電子情報通信学会 ED研
    • Place of Presentation
      富山大学
    • Data Source
      KAKENHI-PROJECT-24246058
  • [Presentation] 金属性HfN/絶縁性HfNxによる全窒化膜Geゲートスタックの研究

    • Author(s)
      三浦 脩, 田中 正俊, 安田 哲二, 前田 辰郎
    • Organizer
      第19回ゲートスタック研究会
    • Place of Presentation
      ニューウェルシティー湯河原(静岡県)
    • Data Source
      KAKENHI-PROJECT-24560390
  • [Presentation] 窒素組成制御による 金属性HfN/絶縁性HfNx/Ge MIS構造の研究

    • Author(s)
      三浦 脩, 田中 正俊, 安田 哲二, 前田 辰郎
    • Organizer
      第18回ゲートスタック研究会(主催 応用物理学会薄膜・表面物理分科会,シリコンテクノロジー分科会)
    • Place of Presentation
      ニューウェルシティー湯河原(静岡県)
    • Data Source
      KAKENHI-PROJECT-24560390
  • [Presentation] GaSb表面の純窒化プロセスの検討

    • Author(s)
      後藤高寛、藤川紗千恵、藤代博記、小倉睦郎、安田哲二、前田辰郎
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学 湘南キャンパス
    • Year and Date
      2015-03-11 – 2015-03-14
    • Data Source
      KAKENHI-PROJECT-24246058
  • [Presentation] 窒素プラズマ処理を施したAl2O3/GaSb MOS構造の特性評価

    • Author(s)
      後藤高寛、藤川紗千恵、藤代博記、小倉睦郎、安田哲二、前田辰郎
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      北海道大学
    • Year and Date
      2014-09-17 – 2014-09-20
    • Data Source
      KAKENHI-PROJECT-24246058
  • [Presentation] Metal and Insulator HfNx films for Ge MIS structure by controlling nitrogen composition

    • Author(s)
      三浦 脩, 田中 正俊, 安田 哲二, 前田 辰郎
    • Organizer
      European Materials Research Society, 2013 Spring Meeting
    • Place of Presentation
      Congress Center - Strasbourg, France
    • Data Source
      KAKENHI-PROJECT-24560390
  • [Presentation] 窒素組成制御によるGe向け金属性HfN/絶縁性HfNx/半導体MIS構造の研究

    • Author(s)
      三浦 脩, 田中 正俊, 安田 哲二, 前田 辰郎
    • Organizer
      第74回応用物理学会学術講演会
    • Place of Presentation
      同志社大学(京都府)
    • Data Source
      KAKENHI-PROJECT-24560390
  • [Presentation] 窒素組成制御による高移動度チャネル材料向け金属HfN/絶縁性HfNx/半導体MIS構造の研究

    • Author(s)
      三浦 脩, 田中 正俊, 安田 哲二, 前田 辰郎
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学(愛媛県)
    • Data Source
      KAKENHI-PROJECT-24560390
  • 1.  YASUDA Tetsuji (90220152)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 15 results
  • 2.  TANAKA Masatoshi (90130400)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 8 results
  • 3.  Kato Kazutoshi (10563827)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 4.  MIYATA Noriyuki (40358130)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 5.  OHTAKE Akihiro (30267398)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 6.  NARA Jun (30354145)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 7.  FUJISHIRO Hiroki (60339132)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 8 results
  • 8.  ICHIKAWA Masakazu (20343147)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 9.  Arai Yasutomo (90371145)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 5 results
  • 10.  Takagi Shinichi (30372402)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 6 results
  • 11.  入沢 寿史 (40759940)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 35 results
  • 12.  永妻 忠夫 (00452417)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 13.  硴塚 孝明 (20522345)
    # of Collaborated Projects: 1 results
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  • 14.  金谷 晴一 (40271077)
    # of Collaborated Projects: 1 results
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  • 15.  高畑 清人 (40780797)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 16.  久保木 猛 (50756236)
    # of Collaborated Projects: 1 results
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  • 17.  西谷 智博 (40391320)
    # of Collaborated Projects: 1 results
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  • 18.  本田 善央 (60362274)
    # of Collaborated Projects: 1 results
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  • 19.  三上 裕也 (80943662)
    # of Collaborated Projects: 1 results
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  • 20.  深津 晋 (60199164)
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  • 21.  神野 莉衣奈 (50915022)
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  • 22.  安武 裕輔 (10526726)
    # of Collaborated Projects: 1 results
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  • 23.  CHANG WENHSIN
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