Oishi Toshiyuki 大石敏之

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OISHI Toshiyuki 大石敏之

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Researcher Number	40393491
Other IDs
Affiliation (Current)	2025: 佐賀大学, 理工学部, 教授
Affiliation (based on the past Project Information) *help	2019 – 2024: 佐賀大学, 理工学部, 教授 2015 – 2017: 佐賀大学, 工学(系)研究科(研究院), 教授
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related / Electronic materials/Electric materials Except Principal Investigator Basic Section 30010:Crystal engineering-related
Keywords	Principal Investigator 窒化ガリウム / トラップ評価 / 2端子対回路評価 / 回路モデル / 2端子対回路 / トラップ / 小信号等価回路 / 等価回路モデル / 窒化ガリウムトランジスタ / 2端子対回路網パラメータ … More / デバイスモデル / レクテナ / 酸化ガリウム / ダイヤモンド / 高周波大電力 / RF-DC変換 / ワイドバンドギャップ半導体 / デバイス設計・製造プロセス / 電子・電気材料 / エネルギー効率化 / 電子デバイス・機器 / 半導体物性 … More Except Principal Investigator パワー半導体 / ヘテロエピタキシャル成長 / ダイヤモンド / ダイヤモンド半導体 / 成長機構 / 結晶成長機構 / ワイドギャップ半導体 / 転位 / シンクロトロン光 / パワー半導体デバイス Less

2端子対回路評価による窒化ガリウムトラップの大信号における物理解明と回路モデル化Principal Investigator
- Principal Investigator
  
  大石敏之
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Saga University
Science of Inch-Diameter Diamond Heteroepitaxial Growth on Lattice-Mismatched Substrate
- Principal Investigator
  
  嘉数誠
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Saga University
Analysis of Physical Mechanism for GaN Semiconductors Traps by AC Two Port NetworkPrincipal Investigator
- Principal Investigator
  
  Oishi Toshiyuki
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Saga University
Fundamental Study on Cubic Diamond Heteroepitaxial Growth on Trigonal Sapphire Substrate
- Principal Investigator
  
  Kasu Makoto
- Project Period (FY)
  2019 – 2021
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 30010:Crystal engineering-related
- Research Institution
  Saga University
Study on super wide band gap semiconductor toward fabrication of high power electric devices operating at high frequencyPrincipal Investigator
- Principal Investigator
  
  OISHI Toshiyuki
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Saga University

All 2024 2023 2022 2021 2020 2019 2018 2017 2016

All Journal Article Presentation

[Journal Article] Drain bias dependence of Y <sub>22</sub> and Y <sub>21</sub> signals at low frequency for on-state conditions in AlGaN/GaN high electron mobility transistors2024
- Author(s)
  Oishi Toshiyuki、Takada Shiori、Kudara Ken、Yamaguchi Yutaro、Shinjo Shintaro、Yamanaka Koji
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 63 Issue: 1 Pages: 010905-010905
- DOI
  10.35848/1347-4065/ad1894
- Data Source
  KAKENHI-PROJECT-21K04139
[Journal Article] AC Stable (100 h) Operation of NO2 p-Type Doped Diamond MOSFETs2023
- Author(s)
  Niloy Chandra Saha, Tomoki Shiratsuchi, Toshiyuki Oishi, M. Kasu
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 44 Issue: 10 Pages: 1704-1707
- DOI
  10.1109/led.2023.3305302
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K23242
[Journal Article] Drain-bias dependence of low-frequency Y22 signals for Fe-related GaN traps in GaN HEMTs with different Fe doping concentrations2023
- Author(s)
  Nishida Taiki、Oishi Toshiyuki、Otsuka Tomohiro、Yamaguchi Yutaro、Tsuru Masaomi、Yamanaka Koji
- Journal Title
  
  Solid-State Electronics
  
  Volume: 201 Pages: 108589-108589
- DOI
  10.1016/j.sse.2023.108589
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21K04139
[Journal Article] Fast Switching NO2-doped p-Channel Diamond MOSFETs2023
- Author(s)
  Niloy Chandra Saha, Tomoki Shiratsuchi, Seong-Woo Kim, Koji Koyama, Toshiyuki Oishi, and Makoto Kasu
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 44 Issue: 5 Pages: 793-796
- DOI
  10.1109/led.2023.3261277
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K23242
[Journal Article] 1651-V All-ion-implanted Schottky Barrier Diode on Heteroepitaxial Diamond with 3.6×105 On/off Ratio2023
- Author(s)
  Niloy Chandra Saha , Yuya Irie, Yuhei Seki, Yasushi Hoshino, Jyoji Nakata, Seong-Woo Kim , Toshiyuki Oishi,
- Journal Title
  
  IEEE Electron Dev. Lett.
  
  Volume: 44 Issue: 2 Pages: 293-296
- DOI
  10.1109/led.2022.3232589
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K23242
[Journal Article] 3659-V NO2 p-Type Doped Diamond MOSFETs on Misoriented Heteroepitaxial Diamond Substrates2023
- Author(s)
  Niloy Chandra Saha; Seong-Woo Kim; Koji Koyama; Toshiyuki Oishi; Makoto Kasu
- Journal Title
  
  IEEE Electron Dev. Lett.
  
  Volume: 44 Issue: 1 Pages: 112-112
- DOI
  10.1109/led.2022.3226426
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K23242
[Journal Article] The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure2023
- Author(s)
  Yuhei Seki, Niloy Chandra Saha, Seiya Shigematsu, Yasushi HOSHINO, Jyoji Nakata, Toshiyuki Oishi and Makoto Kasu
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 62 Issue: 4 Pages: 040902-040902
- DOI
  10.35848/1347-4065/acc70d
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K23242
[Journal Article] Long Stress (190 h) Operation of NO2 p-Type Doped Diamond MOSFETs2023
- Author(s)
  Niloy Chandra Saha, Tomoki Shiratsuchi, Seong-Woo Kim, Koji Koyama, Toshiyuki Oishi, M. Kasu
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 44 Issue: 6 Pages: 975-978
- DOI
  10.1109/led.2023.3265664
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K23242
[Journal Article] 3326-V Modulation-Doped Diamond MOSFETs2022
- Author(s)
  Niloy Chandra Saha , Seong-Woo Kim , Toshiyuki Oishi , and Makoto Kasu
- Journal Title
  
  IEEE Electron Dev. Lett
  
  Volume: 43 Issue: 8 Pages: 1303-1303
- DOI
  10.1109/led.2022.3181444
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K23242
[Journal Article] Line-shaped defects: Origin of leakage current in halide vapor-phase epitaxial (001) β-Ga2O3 Schottky barrier diodes2022
- Author(s)
  Sayleap Sdoeung, Kohei Sasaki, Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, Toshiyuki Oishi, and Makoto Kasu
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 120 Issue: 12 Pages: 122107-122107
- DOI
  10.1063/5.0088284
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02616
[Journal Article] 875-MW/cm2 Low-Resistance NO2 p-type Doped Chemical Mechanical Planarized Diamond MOSFETs2022
- Author(s)
  N. C. Saha, S. -W. Kim, T. Oishi, and M. Kasu
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 43 Issue: 5 Pages: 777-777
- DOI
  10.1109/led.2022.3164603
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K23242
[Journal Article] Fabrication of diamond modulation-doped FETs by NO2 delta doping in an Al2 O3 gate layer2021
- Author(s)
  Makoto Kasu, Niloy Chandra Saha, Toshiyuki Oishi, and Seong-Woo Kim
- Journal Title
  
  Appl. Phys. Express
  
  Volume: 14 Issue: 5 Pages: 051004-051004
- DOI
  10.35848/1882-0786/abf445
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02616
[Journal Article] 345-MW/cm2 2608-V NO2 p-type Doped Diamond MOSFETs with an Al2O3 Passivation Overlayer on Heteroepitaxial Diamond2021
- Author(s)
  Niloy Chandra Saha, Seong-Woo Kim, Toshiyuki Oishi, Yuki Kawamata, Koji Koyama, and Makoto Kasu
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 42 Issue: 6 Pages: 903-906
- DOI
  10.1109/led.2021.3075687
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02616
[Journal Article] 145-MW/cm2 Heteroepitaxial Diamond MOSFETs With NO2 p-Type Doping and an Al2O3 Passivation Layer2020
- Author(s)
  Niloy Chandra Saha, Toshiyuki Oishi, Seongwoo Kim, Yuki Kawamata, Koji Koyama, Makoto Kasu
- Journal Title
  
  IEEE ELECTRON DEVICE LETTERS
  
  Volume: 41 Issue: 7 Pages: 1066-1066
- DOI
  10.1109/led.2020.2997897
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02616
[Journal Article] Origin of reverse leakage current path in edge-defined film-fed growth (001) β-Ga2O3 Schottky barrier diodes observed by high　sensitive emission microscopy2020
- Author(s)
  Sayleap Sdoeung , Kohei Sasaki , Katsumi Kawasaki, Jun Hirabayashi, Akito Kuramata, Toshiyuki Oishi , Makoto Kasu
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 117 Issue: 2 Pages: 022106-022106
- DOI
  10.1063/5.0012794
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19H02616
[Journal Article] Diamond Schottky Barrier Diodes With NO2 Exposed Surface and RF-DC Conversion Toward High Power Rectenna2017
- Author(s)
  Toshiyuki Oishi, Naoto Kawano, Satoshi Masuya, and Makoto Kasu
- Journal Title
  
  IEEE ELECTRON DEVICE LETTERS
  
  Volume: 38 Issue: 1 Pages: 87-90
- DOI
  10.1109/led.2016.2626380
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15H03977, KAKENHI-PROJECT-15K05990
[Journal Article] Conduction mechanism in highly doped β-Ga2O3 (-201) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes2016
- Author(s)
  Toshiyuki Oishi, Kazuya Harada, Yuta Koga, and Makoto Kasu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 3 Pages: 030305-030305
- DOI
  10.7567/jjap.55.030305
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K05990, KAKENHI-PROJECT-15H03977
[Journal Article] 表面伝導型ダイヤモンドFETのデバイスシミュレーションに関する検討2016
- Author(s)
  大石敏之，岸川拓也，吉川大地，平間一行，嘉数誠
- Journal Title
  
  電子情報通信学会論文誌C
  
  Volume: J99-C Pages: 193-200
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K05990
[Presentation] ダイヤモンドMOSFETの高電圧(105V) スイッチング動作2024
- Author(s)
  白土智基，ニロイ　チャンドラ　サハ, 大石敏之, 嘉数誠
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] GaN HEMTのGaNトラップのY22/Y21信号と過渡応答特性比較-マルチバイアスでの比較-2024
- Author(s)
  大石敏之, 東島拓海,　久樂顕, 山口裕太郎, 新庄真太郎, 山中宏治
- Organizer
  2024年電子情報通信学会総合大会
- Data Source
  KAKENHI-PROJECT-21K04139
[Presentation] 低周波Yパラメータ（Y11、Y22）を利用したGaN HEMTのトラップ評価2024
- Author(s)
  大石敏之,　高田栞,　久樂顕,　山口裕太郎,　新庄真太郎,　山中宏治
- Organizer
  電子情報通信学会研究会
- Data Source
  KAKENHI-PROJECT-21K04139
[Presentation] 低周波Y21とゲートラグ測定によるGaN HEMTのトラップピーク周波数のドレイン電圧依存性評価2023
- Author(s)
  東島拓海, 高田栞, 大石敏之, 久樂顕, 山口裕太郎, 新庄真太郎, 山中宏治
- Organizer
  2023年度応用物理学会九州支部学術講演会
- Data Source
  KAKENHI-PROJECT-21K04139
[Presentation] ダイヤモンドMOSFET の高速(<10ns)スイッチング特性2023
- Author(s)
  ニロイチャンドラサハ, 白土智基，金聖祐, 小山浩司, 大石敏之, 嘉数誠
- Organizer
  17a-A301-8、2023年第70回応用物理学会春季学術講演会、東京、2023年3月17日
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] ダイヤモンドMOSFETの高速(<10ns)スイッチング動作2023
- Author(s)
  白土智基・Niloy Saha・Seongwoo Kim・・大石敏之・嘉数　誠
- Organizer
  電子通信情報学会総合大会C-10-6、さいたま、2023年3月9日
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] ダイヤモンドMOSFETの長時間(190h)ストレス特性2023
- Author(s)
  白土智基・Niloy Saha・Seongwoo Kim・小山浩司・大石敏之・嘉数　誠
- Organizer
  電子通信情報学会総合大会C-10-7、さいたま、2023年3月9日
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] ダイヤモンドNO2 p 型ドープMOSFET の長時間(100h)AC ストレス測定2023
- Author(s)
  白土智基，ニロイチャンドラサハ, 大石敏之, 嘉数誠
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] GaN HEMT のDC パラメータがトラップ特性（低周波Y22）に与える影響（デバイスシミュレーションによる検討）2023
- Author(s)
  西嶋尚, 久樂顕, 山口裕太郎, 大石敏之, 新庄真太郎, 山中宏治
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04139
[Presentation] ダイヤモンドMOSFET の長時間(190h)ストレス測2023
- Author(s)
  ニロイチャンドラサハ, 白土智基，金聖祐, 小山浩司, 大石敏之, 嘉数誠
- Organizer
  17a-A301-9、2023年第70回応用物理学会春季学術講演会、東京、2023年3月17日
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] S パラメータの周波数依存性を用いたトランジスタ動作時におけるGaN HEMT のトラップとRF 特性の同時評価2023
- Author(s)
  津山慎樹, 久樂顕, 山口裕太郎, 大石敏之, 新庄真太郎, 山中宏治
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04139
[Presentation] GaN HEMTのGaNトラップによるY22信号と過渡応答特性の比較2023
- Author(s)
  加地大樹、田渕将也、大塚友絢、山口裕太郎、大石敏之、新庄真太郎、山中宏治
- Organizer
  第70回応用物理学会春季学術講演会，　18a-A301-12.
- Data Source
  KAKENHI-PROJECT-21K04139
[Presentation] GaN HEMTのGaNトラップが低周波Y22パラメータに与える影響の検討－デバイスシミュレーション－2023
- Author(s)
  諸隈奨吾,　大塚友絢,　大石敏之,　山口裕太郎,　新庄真太郎,　山中宏治
- Organizer
  電子情報通信学会研究会　ED2022-91
- Data Source
  KAKENHI-PROJECT-21K04139
[Presentation] GaN HEMT に対する低周波Y21 とY22 信号のドレイン電圧依存性2023
- Author(s)
  大石敏之, 高田栞, 久樂顕, 山口裕太郎, 新庄真太郎, 山中宏治
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04139
[Presentation] GaN HEMT 中のトラップ位置と低周波Y21/Y22 虚部の関係（デバイスシミュレーションによる検討）2023
- Author(s)
  大石敏之, 諸隈奨吾, 久樂顕, 山口裕太郎, 新庄真太郎, 山中宏治
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21K04139
[Presentation] Fabrication and Electrical properties for diamond Schottky Barrier Diodes with small area Schottky electrode using All-Ion-Implantation Process2022
- Author(s)
  S. Shigematsu, Y. Seki, Y. Hoshino, J. Nakata, T. Oishi, and M. Kasu
- Organizer
  1st International Workshop on Diamond Devices, Saga, Feb 21-22, 2022
- Invited
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 875 MW/cm2 2568 V 0.68 A/mm NO2 P-type Doped Diamond MOSFETs2022
- Author(s)
  N. C. Saha, S-W. Kim, T. Oishi, and M. Kasu
- Organizer
  15th International Conference on New Diamond and Nano Carbons (NDNC 2022), Kanazawa, June 6-9, 2022.
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] High On/Off Rectification Ratio of Diamond Schottky Barrier Diode Fabricated by All-Ion-Implantation Doping2022
- Author(s)
  N. C. Saha, Irie, Seki, Nakata, Hoshino, S. -W. Kim, T. Oishi, and M. Kasu
- Organizer
  32nd International Conference on Diamond and Carbon Materials (ICDCM2022), Marid, Sep 4-8, 2022.
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] B イオン注入のみで作製したダイヤモンドショットキーバリアダイオード2022
- Author(s)
  関裕平，重松誠也, 大石敏之, 嘉数誠, 星野靖, 中田穣治、
- Organizer
  秋季応用物理学会、仙台、2022年9月20－23日
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] 3659 V 0.37 A/mm NO2-doped p-channel Diamond MOSFETs fabricated on diamond grown on misoriented sapphire substrates2022
- Author(s)
  Niloy Chandra Saha, Seong-Woo Kim, Koji Koyama, Toshiyuki Oishi, and Makoto Kasu
- Organizer
  The 2022 Materials Research Society (MRS) Fall Meeting, Nov. 27- Dec. 2, 2022, Boston
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] 820 MW/cm2 0.42 A/mm 3326 V 選択ドーピダイヤモンドMOSFET2022
- Author(s)
  ニロイチャンドラサハ, 金聖祐,　大石敏之, 嘉数誠
- Organizer
  2022年秋季応用物理学会、相模原、22p-E302-9、2022年3月22-26日
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] GaN HEMT のGaN トラップ位置が低周波Y パラメータに与える影響（デバイスシミュレーションによる検討）2022
- Author(s)
  諸隈奨吾、大石敏之、大塚友絢、山口裕太郎、津留正臣、山中宏治
- Organizer
  2022年度応用物理学会九州支部学術講演会， 26Ba-6
- Data Source
  KAKENHI-PROJECT-21K04139
[Presentation] 875 MW/cm2 2568 V 0.68A/mm NO2 ドープダイヤモンドMOSFET2022
- Author(s)
  ニロイチャンドラサハ , 金聖祐, 大石敏之 , 嘉数誠
- Organizer
  2022年秋季応用物理学会、相模原、22p-E302-10、2022年3月22-26日。
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 875 MW/cm2 NO2-p-Type-Doped Diamond MOSFETs2022
- Author(s)
  Makoto Kasu, Niloy Chandra Saha, Seong-Woo Kim, and Toshiyuki Oishi,
- Organizer
  32nd International Conference on Diamond and Carbon Materials (ICDCM2022), Marid, Sep 4-8, 2022.
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] 3659 V, 0.37 A /mm微傾斜ダイヤモンド上に作製したNO2ドープダイヤモンドMOSFET2022
- Author(s)
  ニロイチャンドラサハ, 金聖祐, 小山浩司, 大石敏之, 嘉数誠
- Organizer
  秋季応用物理学会、仙台、2022年9月20－23日
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] 低周波Y パラメータを用いたGaN HEMT トラップ評価における表面処理と光照射の効果に関する研究2022
- Author(s)
  高田栞、大石敏之、大塚友絢、山口裕太郎、津留正臣、山中宏治
- Organizer
  2022年度応用物理学会九州支部学術講演会， 26Ba-7
- Data Source
  KAKENHI-PROJECT-21K04139
[Presentation] 低周波 Y22 パラメータ測定によるGaN HEMT中のFeトラップ評価2022
- Author(s)
  西田大生,　大石敏之,　大塚友絢,　山口裕太郎,　新庄真太郎,　山中宏治
- Organizer
  電子情報通信学会研究会　ED2022-34
- Data Source
  KAKENHI-PROJECT-21K04139
[Presentation] Characterization of Fe-doping Induced Trap in AlGaN/GaN HEMTs using Low Frequency Y22 Measurement2022
- Author(s)
  T. Nishida, T. Oishi, T. Otsuka, Y. Yamaguchi, M. Tsuru, K. Yamanaka
- Organizer
  14th Topical workshop on heterostructure microelectronics (TWHM 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21K04139
[Presentation] 3326 V 0.42 A/mm Modulation-Doped Diamond MOSFETs Fabricated via NO2 Delta Doping in Al2O3 Gate Layer2022
- Author(s)
  M. Kasu, N.C. Saha, S.-W. Kim, and T. Oishi
- Organizer
  32nd International Conference on Diamond and Carbon Materials (ICDCM2022), Marid, Sep 4-8, 2022.
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] 820 MW/cm2 0.42 A/mm 3326 V modulation-doped diamond MOSFET2022
- Author(s)
  Niloy Chandra Saha, Seong Woo Kim, Toshiyuki Oishi, Makoto Kasu
- Organizer
  15th International Conference on New Diamond and Nano Carbons (NDNC 2022), Kanazawa, June 6-9, 2022.
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K23242
[Presentation] Diamond Schottky barrier diodes with double Boron ion implantation structure2021
- Author(s)
  S. Sigematsu, T. Oishi, Y. Seki, J. Nakata, and M. Kasu
- Organizer
  New Diamond and Nano Carbons 2020/2021, online
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] High Current (776 mA/mm) and High Voltage (618 V) Operation of Heteroepitaxial Diamond FETs with NO2 Doping2021
- Author(s)
  Niloy Chandra Saha, Seong-Woo Kim, Toshiyuki Oishi, Yuki Kawamata, Koji Koyama, Makoto Kasu
- Organizer
  New Diamond and Nano Carbons 2020/2021, online
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 2608 V Operation of NO2-Doped p-channel Diamond MOSFETs2021
- Author(s)
  Niloy Chandra Saha, Seong Woo Kim, Toshiyuki Oishi, Yuki Kawamata, Koji Koyama, Makoto Kasu
- Organizer
  2021年春季応用物理学会E 19p-Z25-14
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] Modulation-doped diamond field-effect transistors fabricated by NO2 delta doping in an Al2O3 gate layer2021
- Author(s)
  M. Kasu, N.C. Saha, S.-W. Kim, and T. Oishi
- Organizer
  31st International Conference on Diamond and Carbon Materials, Online
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] Diamond Field-Effect Transistors with Modulation Doping2021
- Author(s)
  Makoto Kasu, Niloy Chandra Saha, Seong-Woo Kim, and Toshiyuki Oishi
- Organizer
  2021 Materials Research Society Fall Meeting, EQ19.12, Online,
- Invited
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 選択ドーピングしたダイヤモンド電界効果トランジスタ2021
- Author(s)
  嘉数誠，ニロイサハチャンドラ, 金聖祐，大石敏之
- Organizer
  2021年秋季応用物理学会、オンライン
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] イオン注入法のみでドーピングし作製したダイヤモンドショットキーバリアダイオード2021
- Author(s)
  重松誠弥，関裕平，星野靖，中田穣治，大石敏之，嘉数誠
- Organizer
  2021年秋季応用物理学会、オンライン
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 2608-V 344.6-MW/cm2 NO2 p-type Doped Diamond MOSFETs on High-Quality Heteroepitaxial Diamond Layers2021
- Author(s)
  M. Kasu, N.C. Saha, S. -W. Kim, Y. Kawamata, K. Koyama, and T. Oishi
- Organizer
  Materials Research Society 2021 Spring Meeting, online
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 超高感度エミッション顕微鏡によるEFG成長β型酸化ガリウムショットキーバリアダイオードの漏れ電流の起源の同定2020
- Author(s)
  嘉数誠, スダーンセイリープ, 佐々木公平, 大石敏之, 川崎克己, 平林潤, 倉又朗人
- Organizer
  2020年秋季応用物理学会、9p-Z20-11
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] High Current (0.7 A/mm) for Diamond MOSFETs with 1.4 Micron Meter Gate and NO2 P-Type Doping on High Quality Heteroepitaxial Diamond Substrates2020
- Author(s)
  N. Chandra, T. Oishi, S. -W. Kim, Yuki Kawamata, Koji Koyama, and M. Kasu
- Organizer
  Materials Research Society 2020 Virtual Spring Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] 145-MW/cm2 NO2-Doped Diamond MOSFETs2020
- Author(s)
  Niloy Chandra Saha, Toshiyuki Oishi, Seongwoo Kim, Yuki Kawamata, Koji Koyama, Makoto Kasu
- Organizer
  2020年秋季応用物理学会、11p-Z04-9
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] NO2ドープダイヤモンドMOSFETの大電流（0.78 A / mm）、高電圧（618 V）動作2020
- Author(s)
  ニロイチャンドラサハ, 川又友喜, 小山浩司, 金聖祐, 大石敏之, 嘉数誠
- Organizer
  2020年春季応用物理学会
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] RF characteristics for submicron-gate diamond MOSFETs fabricated on heteroepitaxial diamonds2019
- Author(s)
  M. Kasu, Y. Ishimatsu, T. Kamogawa, N. C. Saha, T. Oishi, S. -W. Kim
- Organizer
  13th New Diamond and Nano Carbons Conference
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] RF measurements and analysis for submicron-gate diamond MOSFETs fabricated on heteroepitaxial diamonds2019
- Author(s)
  M. Kasu, T. Kamogawa, N. C. Saha, T. Oishi, S. -W. Kim
- Organizer
  30th International Conference on Diamond and Related Materials (ICDCM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] RF characteristics for submicron-gate diamond MOSFETs fabricated on heteroepitaxial diamonds2019
- Author(s)
  M. Kasu, Y. Ishimatsu, T. Kamogawa, N. C. Saha, T. Oishi, S. -W. Kim
- Organizer
  30th International Conference on Diamond and Related Materials (ICDCM2019)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-19H02616
[Presentation] マイクロニードル技術を用いた高品質ヘテロエピタキシャル膜上に作製したダイヤモンドFET2018
- Author(s)
  嘉数誠、深見成、石松裕真、桝谷聡士、大石敏之、藤居大樹、金聖佑
- Organizer
  2018年第65回応用物理学会春季学術講演会，早稲田大学西早稲田キャンパス，東京（2018年3月）18p-C302-9.
- Data Source
  KAKENHI-PROJECT-15K05990
[Presentation] Diamond field-effect transistors fabricated on high-quality heteroepitaxial diamond wafer using microneedle technology,2018
- Author(s)
  M. Kasu, N. Fukami, Y. Ishimatsu, S. Masuya, T. Oishi, D. Fujii, S.W. Kim,
- Organizer
  Hasselt Diamond Workshop 2018(SBDD XXIII), March 7 , 2018, Hasselt, Belgium, 12.4.
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05990
[Presentation] 高い電圧変換比を持つダイヤモンドショットキーバリアダイオードRF-DC変換回路2018
- Author(s)
  深見成、網代康佑、大石敏之、河野直士、荒木幸二、桝谷聡士、嘉数誠
- Organizer
  2018年第65回応用物理学会春季学術講演会，早稲田大学西早稲田キャンパス，東京（2018年3月）18p-C302-11.
- Data Source
  KAKENHI-PROJECT-15K05990
[Presentation] NO2ホールドーピング水素終端ダイヤモンドMOS FETのDCストレスによる劣化メカニズムの検討2017
- Author(s)
  舟木浩祐，石松裕真，桝谷聡士，宮崎恭輔，大島孝仁，嘉数誠，大石敏之
- Organizer
  2017年第78回応用物理学会秋季学術講演会，福岡国際会議場，福岡県（2017年9月）8a-S22-8.
- Data Source
  KAKENHI-PROJECT-15K05990
[Presentation] ダイヤモンド素子を用いたレクテナ回路の高電圧動作2017
- Author(s)
  河野直士, 深見成, 桝谷聡士, 大島孝仁, 嘉数誠, 大石敏之
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-15
- Data Source
  KAKENHI-PROJECT-15K05990
[Presentation] NO2ホールドピング水素終端ダイヤモンドMOS FETのDCストレス評価2017
- Author(s)
  石松裕真舟木浩祐桝谷聡士宮崎恭輔大島孝仁嘉数誠大石敏之
- Organizer
  子情報通信学会研究会 ED2017-63、2017年12月1日, pp.69-72
- Data Source
  KAKENHI-PROJECT-15K05990
[Presentation] ダブルNO2ホールドーピングした水素終端ダイヤモンドMOSFETの連続動作2017
- Author(s)
  舟木浩祐, 石松裕真, 桝谷聡士, 大島孝仁, 嘉数誠, 大石敏之
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜
- Year and Date
  2017-03-15
- Data Source
  KAKENHI-PROJECT-15K05990
[Presentation] [依頼講演 ]等価回路モデルを利用したレクテナ RF -DC 変換効率計算　－大電力 RF デバイスに適した半導体材料の検討デバイスに適した半導体材料の検討－2016
- Author(s)
  大石敏之，嘉数誠
- Organizer
  電子情報通信学会技術研究報告
- Place of Presentation
  東京　機械振興会館
- Year and Date
  2016-01-20
- Invited
- Data Source
  KAKENHI-PROJECT-15K05990
[Presentation] ダイヤモンドデバイスを用いた無線電力伝送用レクテナの理論的検討2016
- Author(s)
  大石敏之，河野直士，嘉数誠
- Organizer
  第77回応用物理学会春季学術講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-15
- Data Source
  KAKENHI-PROJECT-15K05990
[Presentation] ダイヤモンドショットキーバリアダイオードによるレクテナ回路の作製2016
- Author(s)
  河野直士，　嘉数　誠，　大石敏之
- Organizer
  電子情報通信学会研究会
- Place of Presentation
  静岡大学　工学部　浜松キャンパス
- Year and Date
  2016-05-20
- Data Source
  KAKENHI-PROJECT-15K05990
[Presentation] 酸化ガリウムダイオードを用いたレクテナ回路動作2016
- Author(s)
  河野直士，大島孝仁，嘉数誠，大石敏之
- Organizer
  第77回応用物理学会春季学術講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-15
- Data Source
  KAKENHI-PROJECT-15K05990
[Presentation] レクテナにおけるダイヤモンドショットキーバリアダイオードの抵抗容量積の影響2016
- Author(s)
  河野直士，桝谷聡士，大島孝仁，大石敏之
- Organizer
  第77回応用物理学会春季学術講演会
- Place of Presentation
  朱鷺メッセ
- Year and Date
  2016-09-15
- Data Source
  KAKENHI-PROJECT-15K05990
[Presentation] 高濃度Sn ドープβ-Ga2O3(-20 1)単結晶の温度特性の検討2016
- Author(s)
  大石敏之，河野直士
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-15K05990
[Presentation] ダイヤモンド素子を用いたレクテナの理論的検討と動作実証2016
- Author(s)
  大石敏之，河野直士，嘉数誠
- Organizer
  第8回集積化MEMSシンポジウム
- Place of Presentation
  平戸文化センター
- Year and Date
  2016-10-25
- Data Source
  KAKENHI-PROJECT-15K05990
[Presentation] ダイヤモンド素子を用いたレクテナ回路の作製2016
- Author(s)
  河野直士, 大石敏之, 嘉数誠
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-15K05990
[Presentation] Demonstration of RF-DC conversion using dual diode rectifier circuit for rectenna with diamond Schottky barrier diodes2016
- Author(s)
  T. Oishi, N. Kawano, and M. Kasu
- Organizer
  Compound Semiconductor Week 2016 (the 43rd International Symposium on Compound Semiconductors (ISCS))
- Place of Presentation
  富山　富山国際会議場
- Year and Date
  2016-06-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K05990
[Presentation] 高効率無線電力伝送を目指したダイヤモンド・レクテナデバイスの提案2016
- Author(s)
  大石敏之，河野直士，嘉数誠
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-15K05990

1. Kasu Makoto (50393731)

# of Collaborated Projects: 2 results

# of Collaborated Products: 45 results
2. 高橋和敏 (30332183)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
3. SAHA・NILOY CHANDRA (20933089)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Oishi Toshiyuki 大石 敏之

OISHI Toshiyuki 大石 敏之

Research Projects

Research Products

Co-Researchers

2端子対回路評価による窒化ガリウムトラップの大信号における物理解明と回路モデル化Principal Investigator

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Science of Inch-Diameter Diamond Heteroepitaxial Growth on Lattice-Mismatched Substrate

Principal Investigator

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Analysis of Physical Mechanism for GaN Semiconductors Traps by AC Two Port NetworkPrincipal Investigator

Principal Investigator

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Review Section

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Fundamental Study on Cubic Diamond Heteroepitaxial Growth on Trigonal Sapphire Substrate

Principal Investigator

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Study on super wide band gap semiconductor toward fabrication of high power electric devices operating at high frequencyPrincipal Investigator

Principal Investigator

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Research Institution

[Journal Article] Drain bias dependence of Y <sub>22</sub> and Y <sub>21</sub> signals at low frequency for on-state conditions in AlGaN/GaN high electron mobility transistors2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] AC Stable (100 h) Operation of NO2 p-Type Doped Diamond MOSFETs2023

Author(s)

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DOI

Data Source

[Journal Article] Drain-bias dependence of low-frequency Y22 signals for Fe-related GaN traps in GaN HEMTs with different Fe doping concentrations2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Fast Switching NO2-doped p-Channel Diamond MOSFETs2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] 1651-V All-ion-implanted Schottky Barrier Diode on Heteroepitaxial Diamond with 3.6×105 On/off Ratio2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] 3659-V NO2 p-Type Doped Diamond MOSFETs on Misoriented Heteroepitaxial Diamond Substrates2023

Author(s)

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DOI

Data Source

[Journal Article] The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure2023

Author(s)

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DOI

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[Journal Article] Long Stress (190 h) Operation of NO2 p-Type Doped Diamond MOSFETs2023

Author(s)

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[Journal Article] 3326-V Modulation-Doped Diamond MOSFETs2022

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Oishi Toshiyuki 大石敏之

OISHI Toshiyuki 大石敏之

[Journal Article] Origin of reverse leakage current path in edge-defined film-fed growth (001) β-Ga2O3 Schottky barrier diodes observed by high　sensitive emission microscopy2020