IMADE MAMORU 今出完

… Alternative Names

IMADE Mamoru 今出完

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Researcher Number	40457007
Other IDs	https://orcid.org/0000-0001-6383-8095
Affiliation (based on the past Project Information) *help	2018: 大阪大学, 工学研究科, 助教 2017: 大阪大学, 工学(系)研究科(研究院), 准教授 2016: 大阪大学, 工学研究科, 准教授 2012 – 2013: 大阪大学, 工学(系)研究科(研究院), 助教 2010: 大阪大学, 工学研究科, 特任教授 2009 – 2010: 大阪大学, 工学研究科, 特任助教 2008: 大阪大学, 大学院・工学研究科, 特任研究員
Review Section/Research Field	Principal Investigator Crystal engineering / Applied materials science/Crystal engineering Except Principal Investigator Electronic materials/Electric materials
Keywords	Principal Investigator 結晶成長 / 酸化ガリウム / 窒化ガリウム / OVPE / 酸化ｶﾞﾘｳﾑ / 窒化ｶﾞﾘｳﾑ / 半導体物性 / 結晶工学 / 高速成長 / 高温成長 … More Except Principal Investigator … More 対流シミュレーション / LPE / 長時間成長 / 低転位化 / 成長モード / Seeded Growth / GaN / 溶液攪拌 / 液相エピタキシャル / Naフラックス法 / 窒化ガリウム Less

低転位バルクGaN単結晶実現に向けた新規気相成長技術の研究Principal Investigator
- Principal Investigator
  
  今出完
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Crystal engineering
- Research Institution
  Osaka University
Development of high-temperature growth technique for high-quality GaN ingotsPrincipal Investigator
- Principal Investigator
  
  IMADE MAMORU
- Project Period (FY)
  2012 – 2013
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Applied materials science/Crystal engineering
- Research Institution
  Osaka University
Development of the growth technique of truly bulk GaN single crystals
- Principal Investigator
  
  MORI Yusuke
- Project Period (FY)
  2008 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Osaka University

All 2017 2016 2014 2013 2012 2011 2010 2009 2008 Other

All Journal Article Presentation

[Journal Article] Effect of H2 carrier gas on the physical properties of a GaN layer grown using Ga2O vapor and NH32014
- Author(s)
  Yuan Bu et al.
- Journal Title
  
  Journal of Crystal Growth
  
  Volume: vol.392 Pages: 1-4
- DOI
  10.1016/j.jcrysgro.2014.01.031
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24760011
[Journal Article] Dramatic increase in the growth rate of GaN layers grown from Ga2O vapor by epitaxial growth on HVPE-GaN substrates with a well-prepared surface2014
- Author(s)
  Yuan Bu et al.
- Journal Title
  
  Applied Physics Express
  
  Volume: Vol.7 Issue: 3 Pages: 0355041-4
- DOI
  10.7567/apex.7.035504
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24760011
[Journal Article] High Temperature Growth of Non-polar a-Plane GaN Film Grown Using Gallium-Oxide as Ga Source2013
- Author(s)
  Tomoaki Sumi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 52 Issue: 2R Pages: 0255031-3
- DOI
  10.7567/jjap.52.025503
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12J00812, KAKENHI-PROJECT-24760011
[Journal Article] Growth of GaN crystals by Na flux method2010
- Author(s)
  Y. Mori, Y. Kitaoka, M. Imade, F. Kawamura, N. Miyoshi, M. Yoshimura, T. Sasaki
- Journal Title
  
  phys. stat. sol. (a) 207
  
  Pages: 1283-1286
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360140
[Journal Article] Growth of Large GaN Single Crystals on High-Quality GaN Seed by Carbon-Added Na Flux Method2010
- Author(s)
  M. Imade, Y. Hirabayashi, Y. Konishi, H. Ukegawa, N. Miyoshi, M. Yoshimura, T. Sasaki, Y. Kitaoka, Y. Mori
- Journal Title
  
  Appl. Phys. Express 3
- NAID
  10026495522
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360140
[Journal Article] Growth of Large GaN Single Crystals on High-Quality GaN Seed by Carbon-Added Na Flux Method2010
- Author(s)
  M.Imade, et al.
- Journal Title
  
  APPLIED PHYSICS EXPRESS 3
  
  Pages: 75501-3
- NAID
  10026495522
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360140
[Journal Article] Study of the metastable region in the growth of GaN using the Na flux method2009
- Author(s)
  F. Kawamura, M. Morishita, N. Miyoshi, M. Imade, M. Yoshimura, Y. Kitaoka, Y. Mori, T. Sasaki,
- Journal Title
  
  J. Cryst. Growth 311
  
  Pages: 4647-4651
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360140
[Journal Article] Growth of GaN single crystals with extremely low dislocation density by two-step dislocation reduction2009
- Author(s)
  F. Kawamura, M. Tanpo, N. Miyoshi, M. Imade, M. Yoshimura, Y. Mori, Y. Kitaoka, T. Sasaki
- Journal Title
  
  J. Cryst. Growth 311
  
  Pages: 3019-3024
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360140
[Journal Article] Effect of carbon additive on increases in the growth rate of 2 in GaN single crystals in the Na flux method2008
- Author(s)
  F. Kawamura, M. Morishita, M. Tanpo, M. Imade, M. Yoshimura, Y. Kitaoka, Y. Mori, T. Sasaki
- Journal Title
  
  Journal of Crystal Growth 310
  
  Pages: 3946-3949
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-20360140
[Presentation] "OVPE法によるGaN厚膜成長に向けた原料利用効率の改善"2017
- Author(s)
  郡司祥和、山口陽平、石橋桂樹、津野慎太郎、北本啓、今西正幸、吉村政志、今出完、伊勢村雅士、森勇介
- Organizer
  第46回結晶成長国内会議(JCCG-46)
- Data Source
  KAKENHI-PROJECT-16H05980
[Presentation] "Growth of GaN crystals by OVPE method with a three-layer frow gas injection reactor,"2017
- Author(s)
  Keiju Ishibashi, Hiroya Kobayashi, Takahiro Oshiba, Shintaro Tsuno, Hirokazu Gunji, Yohei Yamaguchi, Akira Kitamoto, Masayuki Imanishi, Mamoru Imade, Masashi Yoshimura, Yusuke Mori
- Organizer
  36th Electronic Materials Symposium
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H05980
[Presentation] "Effect of H2 carrier gas on the growth of thick GaN layers by Oxide Vapor Phase Epitaxy,"2017
- Author(s)
  Hirokazu Gunji, Yohei Yamaguchi, Keiju Ishibashi, Shintaro Tsuno, Akira Kitamoto, Masayuki Imanishi, Mamoru Imade, Masashi Yoshimura, Masashi Isemura, Yusuke Mori
- Organizer
  36th Electronic Materials Symposium
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H05980
[Presentation] "OVPE法によるバルクGaN結晶成長技術の現状と展望"2017
- Author(s)
  滝野淳一、隅智亮、岡山芳央、信岡政樹、北本啓、今出完、今西正幸、吉村政志、森勇介
- Organizer
  第46回結晶成長国内会議(JCCG-46)
- Data Source
  KAKENHI-PROJECT-16H05980
[Presentation] "OVPE法によるGaN厚膜成長に向けた寄生成長の抑制"2017
- Author(s)
  郡司祥和、山口陽平、石橋桂樹、津野慎太郎、北本啓、今西正幸、吉村政志、今出完、伊勢村雅士、森勇介
- Organizer
  第78回応用物理学会秋季学術講演会、
- Data Source
  KAKENHI-PROJECT-16H05980
[Presentation] "OVPE法における三層流炉を用いたGaN結晶育成"2017
- Author(s)
  石橋桂樹、大芝啓嘉、小林大也、津野慎太郎、郡司祥和、山口陽平、北本啓、今西正幸、今出完、伊勢村雅士、吉村政志、森勇介
- Organizer
  第46回結晶成長国内会議(JCCG-46)
- Data Source
  KAKENHI-PROJECT-16H05980
[Presentation] "第一原理計算を用いたOVPE成長中の半極性GaN表面構造の解析"2017
- Author(s)
  河村貴宏、北本啓、今出完、吉村政志、森勇介、森川良忠、寒川義裕、柿本浩一
- Organizer
  第46回結晶成長国内会議(JCCG-46)
- Data Source
  KAKENHI-PROJECT-16H05980
[Presentation] "Effects of NH3/H2 ratio on the polycrystal formation during GaN growth using OVPE method,"2017
- Author(s)
  Shintaro Tsuno, Hirokazu Gunji, Yohei Yamaguchi, Keiju Ishibashi, Akira Kitamoto, Masayuki Imanishi, Mamoru Imade, Masashi Yoshimura, Masashi Isemura, Tomoaki Sumi, Junichi Takino, Yoshio Okayama, Masaki Nobuoka, Yusuke Mori
- Organizer
  36th Electronic Materials Symposium
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H05980
[Presentation] "Suppression of polycrystalline formation during thick-GaN growth by Oxide Vapor Phase Epitaxy,2017
- Author(s)
  Hirokazu Gunji, Yohei Yamaguchi, Yuki Taniyama, Akira Kitamoto, Masayuki Imanishi, Mamoru Imade, Masashi Isemura, Yusuke Mori
- Organizer
  The 5th International Conference on Light-Emitting Devices and Their Industrial Appilications (LEDIA '17)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H05980
[Presentation] "Improvement of GaN crystallinity in OVPE growth using carbothermal reduction of Ga2O3,"2017
- Author(s)
  Yohei Yamaguchi, Shintaro Tsuno, Keiju Ishibashi, Hirokazu Gunji, Hiroya Kobayashi, Norifumi Murashima, Takahiro Oshiba, Yuki Sakamoto, Akira Kitamoto, Masayuki Imanishi, Mamoru Imade, Masashi Yoshimura, Masashi Isemura, Yusuke Mori
- Organizer
  36th Electronic Materials Symposium
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H05980
[Presentation] "OVPE法を用いたGaN成長におけるNH3/H2比の多結晶形成への影響"2017
- Author(s)
  津野慎太郎、郡司祥和、山口陽平、石橋桂樹、北本啓、今西正幸、今出完、吉村政志、伊勢村雅士、隅智亮、滝野淳一、岡山芳央、信岡政樹、森勇介
- Organizer
  第46回結晶成長国内会議(JCCG-46)
- Data Source
  KAKENHI-PROJECT-16H05980
[Presentation] OVPE法による長時間厚膜GaN成長に向けた多結晶生成の抑制2017
- Author(s)
  郡司祥和、山口陽平、谷山雄紀、北本啓、今西正幸、今出完、伊勢村雅士、森勇介
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜(神奈川県，横浜市)
- Year and Date
  2017-03-17
- Data Source
  KAKENHI-PROJECT-16H05980
[Presentation] "Growth of GaN layers using Ga2O vapor synthesized from Ga and H2O2016
- Author(s)
  Yohei Yamaguchi, Yuki Taniyama, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Masashi Isemura, Yusuke Mori
- Organizer
  The 18th International Conference on Crystal Growth and Epitaxy (ICCGE18)
- Place of Presentation
  Nagoya, Japan
- Year and Date
  2016-08-11
- Data Source
  KAKENHI-PROJECT-16H05980
[Presentation] Study on Reduction of H2O in OVPE Process for Improving GaN Crystallinity2016
- Author(s)
  Yohei Yamaguchi, Hirokazu Gunji, Yuki Taniyama, Akira Kitamoto, Mamoru Imade, Masashi Yoshimura, Masashi Isemura, Yusuke Mori
- Organizer
  International Workshop on Nitride Semiconductors (IWN2016)
- Place of Presentation
  Florida, USA
- Year and Date
  2016-10-05
- Data Source
  KAKENHI-PROJECT-16H05980
[Presentation] Ga_2OをGa源としたGaN気相成長法によるNaフラックス基板上高速成長2014
- Author(s)
  高津啓彰、重田真実、隅智亮、渊ト、北本啓、今出完、吉村政志、伊勢村雅士、森勇介
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス、神奈川県
- Year and Date
  2014-03-18
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] 金属Gaを出発原料としたGa_2Oを用いたGaN結晶の成長2014
- Author(s)
  隅智則、重田真実、卜渊、北本啓、今出完、吉村政志、伊勢村雅士、森勇介
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス、神奈川県
- Year and Date
  2014-03-18
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] Growth of GaN Crystal with High Growth Rate Using Ga_2O as Ga Source2013
- Author(s)
  T. Sumi, M. Juta, J. Takino, Y. Bu, A. Kitamoto, M. Imade, M. Yoshimura, M. Isemura and Y. Mori
- Organizer
  10th International Conference on Nitride Semiconductors
- Place of Presentation
  Washington,USA
- Year and Date
  2013-08-27
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] Effect of H_2 Carrier Gas on the Physical Properties of GaN Layer Growth by Using Ga_2O Vapor and NH_42013
- Author(s)
  Y. Bu, M. Juta, T, Sumi, A. Kitamoto, M. Imade, M. Yoshimura, M. Isemura and Y. Mori
- Organizer
  JSAP- MRS Joint Symposia 2013
- Place of Presentation
  Kyoto JAPAN
- Year and Date
  2013-09-16
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] Growth of GaN crystal with high growth rate synthesized from Ga_2O vapor-T2013
- Author(s)
  T. Sumi, M. Juta, Y. Bu, A. Kitamoto, M. Imade, M. Yoshimura. M. Isemura and Y. Mori
- Organizer
  JSAP- MRS Joint Symposia 2013
- Place of Presentation
  Kyoto JAPAN
- Year and Date
  2013-09-16
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] Effect of growth temperature on crystalline of GaN layers by vapor phase epitaxy using Ga_2O as a Ga source2013
- Author(s)
  Y. Bu, M. Juta, T. Sumi, A. Kitamoto, M. Imade, M. Yoshimura and Y. Mori
- Organizer
  Conference on LED and ItsIndustrial Application'13
- Place of Presentation
  Kanagawa JAPAN
- Year and Date
  2013-04-24
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] Effect of H_2 Carrier Gas on the Physical Properties of GaN Layer Growth by Using Ga_2O Vapor and NH_42013
- Author(s)
  Y. Bu, M. Juta, T. Sumi, A. Kitamoto, M. Imade, M. Yoshimura, M. Isemura and Y. Mori
- Organizer
  10th International Conference on Nitride Semiconductors
- Place of Presentation
  Washington,USA
- Year and Date
  2013-08-28
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] Influence of the GaN Layer Thickness on the Crystallinity in the Vapor Phase Epitaxy Growth of GaN Using Ga_2O2013
- Author(s)
  T. Sumi, M. Juta, J. Takino, Y. Bu, A. Kitamoto, M. Imade, M. Yoshimura, M. Isemura, M. Hata and Y. Mori
- Organizer
  Conference on LED and ItsIndustrial Application'13
- Place of Presentation
  Kanagawa JAPAN
- Year and Date
  2013-04-24
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] Ga_2Oを原料としたGaN結晶成長法における厚膜化に向けた取り組み2012
- Author(s)
  隅智亮、池田憲治、滝野淳一、卜渊、北本啓、今出完、吉村政志、伊勢村雅士、森勇介
- Organizer
  第4回窒化物半導体結晶成長講演会
- Place of Presentation
  東京大学生産技術研究所、東京都
- Year and Date
  2012-04-27
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] Ga_2O原料GaN気相成長法における基板表面処理効果の検討2012
- Author(s)
  重田真実、滝野淳一、隅智亮、卜渊、北本啓、今出完、吉村政志、秦雅彦、伊勢村雅士、森勇介
- Organizer
  第42回結晶成長国内会議
- Place of Presentation
  九州大学筑紫キャンパス総合研究棟、福岡県
- Year and Date
  2012-11-09
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] Growth of a low dislocation GaN layer on a Na-flux-GaN substrate using Ga_2O as a Ga source2012
- Author(s)
  J. Takino, T. Sumi, Y. Bu, A. Kitamoto, M. Imade, M. Yoshimura, M. Isemura and Y. Mori
- Organizer
  International Workshop on nitride Semiconductors 2012
- Place of Presentation
  Hokkaido JAPAN
- Year and Date
  2012-10-16
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] High temperature growth of high crystalline GaN layers with a high growth rate by vapor phase epitaxy using Ga_2O as a Ga source2012
- Author(s)
  Y.Bu, J. Takino, T. Sumi, A. Kitamoto, M. Imade, M. Yoshimura, M. Isemura and Y. Mori
- Organizer
  International Workshop on nitride Semiconductors (IWN2012)
- Place of Presentation
  Hokkaido JAPAN
- Year and Date
  2012-10-15
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] High crystallinity GaN growth on c- and a-plane free-standing GaN substrates using Ga_2O vapor and NH_<3,>2012
- Author(s)
  Y. Bu, M. Juta, J. Takino, T. Sumi, A. Kitamoto, M. Imade, M. Yoshimura and Y. Mori
- Organizer
  7th Photonics Center Symposium "Nanophotonics in Asia 2012"
- Place of Presentation
  Ishikawa JAPAN
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] Growth of high crystalline GaN layers at high temperature on freestanding GaN substrates by vapor phase epitaxy using Ga_2O as Ga source2012
- Author(s)
  Y. Bu, M. Juta, J. Takino, T. Sumi, A. Kitamoto, M. Imade, M. Yoshimura and Y. Mori
- Organizer
  4th International Symposium on Growth of III-Nitrides(ISGN4)
- Place of Presentation
  Miyagi JAPAN
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] Growth of high crystalline GaN layers at high temperature on freestanding GaN substrates by vapor phase epitaxy using Ga2O as Ga source2012
- Author(s)
  Bu,Yuan; Imade,Mamoru
- Organizer
  International Crystal Growth School (ICGS2)
- Place of Presentation
  Hotel Sakan, Convention Center Akiu, Sendai
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] High crystallinity GaN growth on c- and a-plane free-standing GaN substrates using Ga2O vapor and NH32012
- Author(s)
  Bu,Yuan; Imade,Mamoru
- Organizer
  7th Photonics Center Symposium "Nanophotonics in Asia 2012"
- Place of Presentation
  金沢
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] Naフラックス製GaN自立基板上へのGa2Oを用いたGaN気相成長2012
- Author(s)
  滝野淳一、隅智亮、卜渊、北本啓、今出完、吉村政志、伊勢村雅士、森勇介
- Organizer
  第73回応用物理学会学術講演会
- Place of Presentation
  松山大学文京キャンパス、愛媛県
- Year and Date
  2012-09-13
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] Naフラックス製GaN自立基板上へのGa_2Oを用いたGaN気相成長2012
- Author(s)
  滝野淳一、隅智亮、卜渊、北本啓、今出完、吉村政志、秦雅彦、伊勢村雅士、森勇介
- Organizer
  第42回結晶成長国内会議
- Place of Presentation
  九州大学筑紫キャンパス総合研究棟、福岡県
- Year and Date
  2012-11-09
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] Ga_2Oを用いた気相成長法によるHVPE自立基板上へのGaN結晶成長2012
- Author(s)
  滝野淳一、重田真実、隅智亮、卜渊、北本啓、今出完、吉村政志、秦雅彦、伊勢村雅士、森勇介
- Organizer
  第36回結晶成長討論会
- Place of Presentation
  国民宿舎虹の松原ホテル、佐賀県
- Year and Date
  2012-09-26
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] Growth of thick GaN layers by the vapor phase epitaxy using Ga_2O source2012
- Author(s)
  T. Sumi, J. Takino, Y. Bu, A. Kitamoto, M. Imade, M. Yoshimura, M. Isemura and Y. Mori
- Organizer
  International Workshop on nitride Semiconductors(IWN2012)
- Place of Presentation
  Hokkaido JAPAN
- Year and Date
  2012-10-16
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] Growth of GaN layer with high crystallinity on free-standing GaN substrate using Ga_2O as Ga source2012
- Author(s)
  T. Sumi, J. Takino, Y. Bu, A. Kitamoto, M. Imade, M. Yoshimura, M. Isemura and Y. Mori
- Organizer
  4th International Symposium on Growth of III-Nitrides(ISGN4)
- Place of Presentation
  RUSSIA
- Year and Date
  2012-07-17
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] Ga_2O原料GaN気相成長法における基板表面処理効果の検討2012
- Author(s)
  重田真実、滝野淳一、隅智亮、卜渊、北本啓、今出完、吉村政志、秦雅彦、伊勢村雅士、森勇介
- Organizer
  第36回結晶成長討論
- Place of Presentation
  国民宿舎虹の松原ホテル、佐賀県
- Year and Date
  2012-09-26
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] Ca-Li共添加Naフラックス法によるGaN単結晶のSeeded Growth2011
- Author(s)
  今出完, 他
- Organizer
  第58回応用物理学関係連合講演会
- Place of Presentation
  神奈川工科大学
- Year and Date
  2011-03-27
- Data Source
  KAKENHI-PROJECT-20360140
[Presentation] Growth of bulk GaN crystal by Na flux method2011
- Author(s)
  森勇介, 北岡康夫, 今出完
- Organizer
  SPIE Photonics West 7939-01
- Place of Presentation
  USA
- Year and Date
  2011-01-24
- Data Source
  KAKENHI-PROJECT-20360140
[Presentation] Growth of bulk GaN crystal by Na flux method2010
- Author(s)
  Y.Mori, Y.Kitaoka, M.Imade, N. Miyoshi, M.Yoshimura, T.Sasaki
- Organizer
  2010International Symposium on Crystal Growth A-03
- Place of Presentation
  Korea
- Year and Date
  2010-11-08
- Data Source
  KAKENHI-PROJECT-20360140
[Presentation] Seeded Growth of GaN single crystals by Na flux method2010
- Author(s)
  M.Imade, et al.
- Organizer
  29th Electronic Materials Symposium(EMS-29)
- Place of Presentation
  ラフォーレ修善寺、静岡県
- Year and Date
  2010-07-16
- Data Source
  KAKENHI-PROJECT-20360140
[Presentation] Na フラックス法によるバルク GaN 結晶育成技術2010
- Author(s)
  森勇介、北岡康夫、今出完、吉村政志、佐々木孝友
- Organizer
  窒化物ナノ・エレクトロニクス材料研究センター講演会,バルク GaN単結晶育成技術の現状
- Place of Presentation
  東北大学
- Year and Date
  2010-01-07
- Data Source
  KAKENHI-PROJECT-20360140
[Presentation] Seeded growth of GaN single crystals by Na flux method2010
- Author(s)
  M.Imade, Y. Hirabayashi, Y. Konishi, H. Ukegawa, N. Miyoshi, M.Yoshimura, T.Sasaki, Y.Kitaoka, Y.Mori
- Organizer
  29th Electronic Materials Symposium(EMS-29) Fr1-2
- Place of Presentation
  Shizuoka
- Year and Date
  2010-07-16
- Data Source
  KAKENHI-PROJECT-20360140
[Presentation] Growth of bulk GaN crystal by Na flux method2010
- Author(s)
  Y.Mori, Y.Kitaoka, M.Imade, N. Miyoshi, M.Yoshimura, T.Sasaki
- Organizer
  Korea-Japan Workshop on Semiconductors for Energy Saving and Harvesting
- Place of Presentation
  Korea
- Year and Date
  2010-10-11
- Data Source
  KAKENHI-PROJECT-20360140
[Presentation] Growth of bulk GaN crystal by Na flux method2010
- Author(s)
  Y.Mori, Y.Kitaoka, M.Imade, N. Miyoshi, M.Yoshimura, T.Sasaki
- Organizer
  3rd International Symposium on Growth of Nitrides Mo1-1
- Place of Presentation
  France
- Year and Date
  2010-07-05
- Data Source
  KAKENHI-PROJECT-20360140
[Presentation] Na フラックス法によるバルクGaN 結晶育成技術2010
- Author(s)
  森勇介、北岡康夫、今出完、吉村政志、佐々木孝友
- Organizer
  GaN 系プラネットコンシャスデバイス・材料の現状
- Place of Presentation
  東北大学
- Year and Date
  2010-11-04
- Data Source
  KAKENHI-PROJECT-20360140
[Presentation] Growth of high-quality large GaN crystal by Na flux LPE2009
- Author(s)
  F. Kawamura, N.Miyoshi, M.Imade, M.Yoshimura, Y.Kitaoka, Y.Mori, T.Sasaki
- Organizer
  SPIE Photonics West 2009 LASE 2009, paper7216-10
- Place of Presentation
  San Jose, USA.
- Data Source
  KAKENHI-PROJECT-20360140
[Presentation] Growth of GaN Crystals by Na Flux LPE Method2009
- Author(s)
  Y.Mori, Y.Kitaoka, M.Imade, F. Kawamura, N. Miyoshi, M.Yoshimura, T.Sasaki
- Organizer
  The 8th International Conference on Nitride Semiconductors (ICNS-8)
- Place of Presentation
  Jeju,Korea,B1(invit ed)
- Year and Date
  2009-10-19
- Data Source
  KAKENHI-PROJECT-20360140
[Presentation] Recent progress in the growth of GaN single crystals using the Na flux method2008
- Author(s)
  F. Kawamura, S. Katsuike, Y. Hirabayashi, Y. Kitano, N. Miyoshi, M.Imade, M.Yoshimura, Y.Kitaoka, T.sasaki, Y.Mori
- Organizer
  Asia Core Workshop on Wide Bandgap Semiconductors(ACW)
- Place of Presentation
  Kwangju, Korea.
- Data Source
  KAKENHI-PROJECT-20360140
[Presentation] Growth of highquality large GaN crystal by Na flux LPE method2008
- Author(s)
  Y.Mori, F. Kawamura, N. Miyoshi, M.Imade, M. Tanpo, S. Katsuike, Y. Hirabayashi, Y.Kitaoka, T.Sasaki
- Organizer
  The 4th Asian Conference on Crystal Growth and Crystal Technology (CGCT-4)
- Place of Presentation
  Miyagi, Japan.
- Data Source
  KAKENHI-PROJECT-20360140
[Presentation] Ga2O を原料としたGaN 結晶成長法における厚膜化に向けた取り組み
- Author(s)
  隅　智亮、　今出　完
- Organizer
  第4回窒化物半導体結晶成長講演会　 FR-10
- Place of Presentation
  東京大学生産技術研究所 An棟2階コンベンションホール
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] High temperature growth of high crystalline GaN layers with a high growth rate by vapor phase epitaxy using Ga2O as a Ga source
- Author(s)
  Bu,Yuan; Imade,Mamoru
- Organizer
  International Workshop on nitride Semiconductors (IWN2012), MoP-GR-73
- Place of Presentation
  Sapporo Convention Center. Sapporo
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] Growth of thick GaN layers by the vapor phase epitaxy using Ga2O source
- Author(s)
  Sumi,Tomoaki; Imade,Mamoru
- Organizer
  International Workshop on nitride Semiconductors (IWN2012), TuP-GR-43
- Place of Presentation
  Sapporo Convention Center. SapporoSapporo Convention Center.
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] Ga2O原料GaN気相成長法における基板表面処理効果の検討
- Author(s)
  重田真実、　今出　完
- Organizer
  第36回結晶成長討論会, PW8
- Place of Presentation
  国民宿舎虹の松原ホテル（佐賀県唐津市東唐津４丁目）
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] Ga2O 原料GaN 気相成長法における基板表面処理効果の検討
- Author(s)
  重田真実、　今出　完
- Organizer
  第42回結晶成長国内会議,10PS13
- Place of Presentation
  九州大学筑紫キャンパス総合研究棟(C-CUBE) （福岡県春日市春日公園6-1）
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] Naフラックス製GaN自立基板上へのGa2Oを用いたGaN気相成長
- Author(s)
  滝野淳一、　今出　完
- Organizer
  第42回結晶成長国内会議,09aC07
- Place of Presentation
  九州大学筑紫キャンパス総合研究棟(C-CUBE) （福岡県春日市春日公園6-1）
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] Growth of GaN layer with high crystallinity on free-standing GaN substrate using Ga2O as Ga source
- Author(s)
  Sumi,Tomoaki; Imade,Mamoru
- Organizer
  4th International Symposium on Growth of III-Nitrides(ISGN4), Tu-63p
- Place of Presentation
  The Hotel Saint-Petersburg, Russia
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] Ga2Oを用いた気相成長法によるHVPE自立基板上へのGaN結晶成長
- Author(s)
  滝野淳一、　今出　完
- Organizer
  第36回結晶成長討論会, PW11
- Place of Presentation
  国民宿舎虹の松原ホテル（佐賀県唐津市東唐津４丁目）
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] Growth of a low dislocation GaN layer on a Na-flux-GaN substrate using Ga2O as a Ga source
- Author(s)
  Takino,Junichi; Imade,Mamoru
- Organizer
  International Workshop on nitride Semiconductors (IWN2012),TuP-GR-44
- Place of Presentation
  Sapporo Convention Center. Sapporo
- Data Source
  KAKENHI-PROJECT-24760011
[Presentation] Naフラックス製GaN自立基板上へのGa2Oを用いたGaN気相成長
- Author(s)
  滝野淳一、　今出　完
- Organizer
  第73回応用物理学会学術講演会, 13p-H9-4
- Place of Presentation
  松山大学文京キャンパス
- Data Source
  KAKENHI-PROJECT-24760011

1. MORI Yusuke (90252618)

# of Collaborated Projects: 1 results

# of Collaborated Products: 16 results
2. KITAOKA Yasuo (70444560)

# of Collaborated Projects: 1 results

# of Collaborated Products: 16 results
3. KAWAMURA Fumio (80448092)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results

IMADE MAMORU 今出 完

IMADE Mamoru 今出 完

Research Projects

Research Products

Co-Researchers

低転位バルクGaN単結晶実現に向けた新規気相成長技術の研究Principal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of high-temperature growth technique for high-quality GaN ingotsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

Development of the growth technique of truly bulk GaN single crystals

Principal Investigator

Project Period (FY)

Research Category

Research Field

Research Institution

[Journal Article] Effect of H2 carrier gas on the physical properties of a GaN layer grown using Ga2O vapor and NH32014

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Dramatic increase in the growth rate of GaN layers grown from Ga2O vapor by epitaxial growth on HVPE-GaN substrates with a well-prepared surface2014

Author(s)

Journal Title

DOI

Data Source

[Journal Article] High Temperature Growth of Non-polar a-Plane GaN Film Grown Using Gallium-Oxide as Ga Source2013

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Growth of GaN crystals by Na flux method2010

Author(s)

Journal Title

Data Source

[Journal Article] Growth of Large GaN Single Crystals on High-Quality GaN Seed by Carbon-Added Na Flux Method2010

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Growth of Large GaN Single Crystals on High-Quality GaN Seed by Carbon-Added Na Flux Method2010

Author(s)

Journal Title

NAID

Data Source

[Journal Article] Study of the metastable region in the growth of GaN using the Na flux method2009

Author(s)

Journal Title

Data Source

[Journal Article] Growth of GaN single crystals with extremely low dislocation density by two-step dislocation reduction2009

Author(s)

Journal Title

Data Source

[Journal Article] Effect of carbon additive on increases in the growth rate of 2 in GaN single crystals in the Na flux method2008

Author(s)

Journal Title

Data Source

[Presentation] "OVPE法によるGaN厚膜成長に向けた原料利用効率の改善"2017

Author(s)

Organizer

Data Source

[Presentation] "Growth of GaN crystals by OVPE method with a three-layer frow gas injection reactor,"2017

Author(s)

Organizer

Data Source

[Presentation] "Effect of H2 carrier gas on the growth of thick GaN layers by Oxide Vapor Phase Epitaxy,"2017

Author(s)

Organizer

Data Source

[Presentation] "OVPE法によるバルクGaN結晶成長技術の現状と展望"2017

Author(s)

Organizer

Data Source

IMADE MAMORU 今出完

IMADE Mamoru 今出完