Kanazawa Toru 金澤徹

… Alternative Names

KANAZAWA Toru 金澤徹

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Researcher Number	40514922
Other IDs
Affiliation (based on the past Project Information) *help	2016 – 2018: 東京工業大学, 工学院, 助教 2013 – 2015: 東京工業大学, 理工学研究科, 助教 2009 – 2010: Tokyo Institute of Technology, 大学院・理工学研究科, 助教
Review Section/Research Field	Principal Investigator Electron device/Electronic equipment / Basic Section 21060:Electron device and electronic equipment-related Except Principal Investigator Electron device/Electronic equipment
Keywords	Principal Investigator 化合物半導体 / 高移動度チャネル / MOSFET / マルチゲート構造 / マルチゲート / 結晶成長 / MOVPE / ヘテロ接合 / TFET / トランジスタ … More / Ⅲ-Ⅴ族化合物半導体 / トンネルトランジスタ / 層状物質 / MOSトランジスタ / III-V族化合物 / ナノシート / MOCVD / 有機金属気相成長法 / 半導体超微細化 / III-V族化合物半導体 / 極微細加工プロセス / 半導体物性 / 電子デバイス・機器 / III-V族半導体 … More Except Principal Investigator 絶縁体-半導体界面 / 格子緩和成長 / 分子線エピタキシー / InGaAs MIS構造 / タイプIIヘテロ構造 / 化合物半導体MOSFET / スタガード型ヘテロ構造 / 化合物半導体 / ヘテロ接合 / トンネルFET Less

III-V/2D heterojunction tunneling transistorPrincipal Investigator
- Principal Investigator
  
  金澤徹
- Project Period (FY)
  2018
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Tokyo Institute of Technology
Stacked short channel III-V MOSFETPrincipal Investigator
- Principal Investigator
  
  Kanazawa Toru
- Project Period (FY)
  2016 – 2017
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology
Complementary vertical tunnel FET aiming for low voltage and high speed operation by heterostructure design and miniaturization
- Principal Investigator
  
  MIYAMOTO Yasuyuki
- Project Period (FY)
  2014 – 2016
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology
3D InGaAs MOSFET with regrown source/drainPrincipal Investigator
- Principal Investigator
  
  Kanazawa Toru
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology
High performance III-V MOSFETs using MOVPE selectively regrown sourcePrincipal Investigator
- Principal Investigator
  
  KANAZAWA Toru
- Project Period (FY)
  2009 – 2010
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  Tokyo Institute of Technology

All 2019 2018 2017 2016 2015 2014 2011 2010 2009 Other

All Journal Article Presentation Patent

[Journal Article] Effect of increasing gate capacitance on performance of p-MoS2/HfS2 van der Waals heterostructure tunneling field-effect transistor2019
- Author(s)
  W. Zhang, S. Netsu, T. Kanazawa, T. Amemiya, Y. Miyamoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: -
- NAID
  210000135286
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18K04279
[Journal Article] Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain2016
- Author(s)
  N. Kise,H. Kinoshita, A. Yukimachi, T. Kanazawa and Y. Miyamoto
- Journal Title
  
  Solid-State Electronics
  
  Volume: vol.126 Pages: 92-95
- DOI
  10.1016/j.sse.2016.09.009
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-16H06292, KAKENHI-PROJECT-26249046, KAKENHI-PROJECT-16K18087
[Journal Article] Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density2014
- Author(s)
  K. Ohsawa, A. Kato, T. Kanazawa, E. Uehara and Y. Miyamoto
- Journal Title
  
  IEICE Electron. Express
  
  Volume: 11 Issue: 14 Pages: 20140567-20140567
- DOI
  10.1587/elex.11.20140567
- NAID
  130004725760
- ISSN
  1349-2543
- Language
  English
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26249046
[Journal Article] InP/InGaAs Composite Metal-Oxide-Semiconductor Firld-Effect Transistors with Regrown Source and Al_2O_3 gatedielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm2011
- Author(s)
  R.Terao, T.Kanazawa, S.Ikeda, Y.Yonai, A.Kato, Y.Miyamoto
- Journal Title
  
  Applied Physics Express vol.4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760253
[Journal Article] InP/InGaAs Composite MOSFETs with Regrown Source and Al_2O_3 gatedielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm2011
- Author(s)
  R.Terao, T.Kanazawa, S.Ikeda, Y.Yonai, A.Kato, Y.Miyamoto
- Journal Title
  
  Applied Phys.Exp.
  
  Volume: vol.4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760253
[Journal Article] Submicron InP/InGaAs Composite-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Selectively Regrown n+-Source2010
- Author(s)
  T.Kanazawa, K.Wakabayashi, H.Saito, R.Terao, S.Ikeda, Y.Miyamoto, K.Furuya
- Journal Title
  
  Applied Physics Express vol.3
- NAID
  10026690574
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760253
[Journal Article] Submicron InP/InGaAs Composite-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Selectively Regrown n^+-Source2010
- Author(s)
  T.Kanazawa, K.Wakabayashi, H.Saito, R.Terao, S.Ikeda, Y.Miyamoto, K.Furuya
- Journal Title
  
  Applied Phys.Exp.
  
  Volume: vol.3
- NAID
  10026690574
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21760253
[Patent] 電界効果トランジスタ2010
- Inventor(s)
  宮本恭幸、金澤徹
- Industrial Property Rights Holder
  東京工業大学
- Industrial Property Number
  2010-204769
- Filing Date
  2010-09-13
- Data Source
  KAKENHI-PROJECT-21760253
[Presentation] 埋め込みNiバックゲートを用いたp-MoS2/HfS2トンネルFET2018
- Author(s)
  張文倫、祢津誠晃、金澤徹、雨宮智宏、宮本恭幸
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-18K04279
[Presentation] InGaAsナノシートトランジスタの作製2018
- Author(s)
  金澤徹、大澤一斗、雨宮智宏、木瀬信和、青沼遼介、宮本恭幸
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16K18087
[Presentation] Fabrication of InGaAs Nanosheet Transistors with Regrown Source2018
- Author(s)
  Kanazawa Toru、Ohsawa Kazuto、Amemiya Tomohiro、Kise Nobukazu、Aonuma Ryosuke、Miyamoto Yasuyuki
- Organizer
  Conpound Semiconductor Week 2018 (CSW2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18087
[Presentation] p-MoS2/HfS2 van der Waals Heterostructure Transistor Using Ni Backgate Buried in HfO2 Dielectric2018
- Author(s)
  W. Zhang, S. Netsu, T. Kanazawa, T. Amemiya, Y. Miyamoto
- Organizer
  2018 Int. Conf. Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18K04279
[Presentation] InGaAsナノシートチャネルを持つマルチゲートMOSFETに向けた作製プロセス開発2017
- Author(s)
  大澤一斗、金澤徹、木瀬信和、雨宮智宏、宮本恭幸
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K18087
[Presentation] 再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作2016
- Author(s)
  木下治紀木瀬信和祢津誠晃金澤徹宮本恭幸
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東工大
- Year and Date
  2016-03-22
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] Operation of 16-nm InGaAs channel multi-gate MOSFETs with regrown source/drain2016
- Author(s)
  H. Kinoshita, N. Kise, A. Yukimachi, T. Kanazawa, Y. Miyamoto
- Organizer
  2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]
- Place of Presentation
  富山国際会議場
- Year and Date
  2016-06-28
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] H.Kinoshita,S.Netsu,Y.Mishima,T.Kanazawa and Y.Miyamoto Fabrication of InGaAs channel multi-gate MOSFETs with MOVPE regrown source/drain2015
- Author(s)
  H.Kinoshita,S.Netsu,Y.Mishima,T.Kanazawa and Y.Miyamoto
- Organizer
  11th Topical Workshop on Heterostructure Microelectronics
- Place of Presentation
  HIDA HOTEL PLAZA, Takayama, Gifu
- Year and Date
  2015-08-24
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] 再成長ソース / ドレインを有する InGaAs マルチゲート MOSFET 作製プロセス2015
- Author(s)
  木下治紀、金澤徹、祢津誠晃、三嶋裕一、宮本恭幸
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場
- Year and Date
  2015-09-16
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] InGaAs channel for low supply voltage2015
- Author(s)
  Y. Miyamoto,T. Kanazawa, Y. Yonai, K. Ohsawa, Y. Mishima, M. Fujimatsu, K. Ohashi, S. Nestu, and S. Iwata
- Organizer
  47th Int. Conf. on Solid State Devices and Materials
- Place of Presentation
  Sapporo Convention Center
- Year and Date
  2015-09-28
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] Improvement of Interface Property of HfO2/Al2O3/In0.53Ga0.47As Using Nitrogen Plasma Cleaning and Hydrogen Annealing2015
- Author(s)
  S. Netsu, T. Kanazawa, and Y. Miyamoto
- Organizer
  27th International Conference on Indium Phosphide and Related Materials
- Place of Presentation
  University of California Santa Barbara, CA USA
- Year and Date
  2015-07-01
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] MOVPE再成長ソース/ドレインを有するInGaAsトライゲートMOSFET2014
- Author(s)
  金澤徹
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  東京
- Data Source
  KAKENHI-PROJECT-25420322
[Presentation] 裏面電極を有するIII-V族量子井戸型チャネルMOSFET2011
- Author(s)
  金澤徹、寺尾良輔、山口裕太郎、池田俊介、米内義晴、加藤淳、宮本恭幸
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  東京
- Year and Date
  2011-01-14
- Data Source
  KAKENHI-PROJECT-21760253
[Presentation] Al_2O_3ゲート絶縁膜を用いたInP/InGaAsチャネルn-MOSFETの電気特性2010
- Author(s)
  寺尾良輔、金澤徹、斎藤尚史、若林和也、池田俊介、宮本恭幸、古屋一仁
- Organizer
  第57回応用物理学会関係連合講演会
- Place of Presentation
  平塚
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-21760253
[Presentation] Al_2O_3ゲート絶縁膜および再成長ソースを有するサブミクロンInP/InGaAs n-MOSFET2010
- Author(s)
  寺尾良輔、金澤徹、池田俊介、米内義晴、加藤淳、宮本恭幸
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21760253
[Presentation] InGaAs/InP MISFET with epitaxially grown source2010
- Author(s)
  Y. Miyamoto, T. Kanazawa, H. Saito, K. Furuya
- Organizer
  2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)
- Place of Presentation
  Busan
- Year and Date
  2010-06-25
- Data Source
  KAKENHI-PROJECT-21760253
[Presentation] InP/IGaAs Quantum Well Channel MOSFET Bonded on Silicon Substrate2010
- Author(s)
  T. Kanazawa
- Organizer
  2nd Japanese-Russion Young Scientists Conf. Nano-Materials and Nano-Technology
- Place of Presentation
  Tokyo
- Year and Date
  2010-09-21
- Data Source
  KAKENHI-PROJECT-21760253
[Presentation] Submicron InP/InGaAs composite channel MOSFET with selectively regrown n^+-source/drain buried in channel undercut2010
- Author(s)
  T. Kanazawa, K. Wakabayashi, H. Saito, R. Terao, T. Tajima, S. Ikeda, Y. Miyamoto, K. Furuya
- Organizer
  The 22nd Int. Conf. Indium Phosphide and Related Materials (IPRM 2010)
- Place of Presentation
  Takamatsu
- Year and Date
  2010-06-01
- Data Source
  KAKENHI-PROJECT-21760253
[Presentation] III-V族サブミクロンチャネルを有する高移動度MOSFET2010
- Author(s)
  金澤徹、若林和也、斎藤尚史、寺尾良輔、池田俊介、宮本恭幸、古屋一仁
- Organizer
  電気学会電子デバイス研究会
- Place of Presentation
  東京
- Year and Date
  2010-03-26
- Data Source
  KAKENHI-PROJECT-21760253
[Presentation] Submicron InP/InGaAs composite channel MOSFETs with selectively regrown n^+-source/drain buried in channel undercut2010
- Author(s)
  T.Kanazawa
- Organizer
  22nd Int.Conf.Indium Phosphide and Related Materials (IPRM2010)
- Place of Presentation
  高松
- Year and Date
  2010-06-01
- Data Source
  KAKENHI-PROJECT-21760253
[Presentation] InP/InGaAs MOSFET with back-electrode structure bonded on Si substrate using a BCB adhesive Layer2010
- Author(s)
  T.Kanazawa
- Organizer
  2010 International Conference on Solid State Devices and Materials (SSDM 2010)
- Place of Presentation
  東京
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-21760253
[Presentation] InP/InGaAs composite channel MOSFET with Al_2O_3 gate dielectric2010
- Author(s)
  金澤徹
- Organizer
  IEICE Technical Report of meeting on Electron Devices
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2010-01-14
- Data Source
  KAKENHI-PROJECT-21760253
[Presentation] Submicron-channel InGaAs MISFET with epitaxially grown source2010
- Author(s)
  Y. Miyamoto, H. Saito, T. Kanazawa
- Organizer
  10th IEEE Int. Conf. Solid-State and Integrated Circuit Technology (ICSICT-2010)
- Place of Presentation
  Shanghai, China
- Year and Date
  2010-11-03
- Data Source
  KAKENHI-PROJECT-21760253
[Presentation] Si基板上貼付された裏面電極付InP/InGaAs MOSFET2010
- Author(s)
  金澤徹、寺尾良輔、山口裕太郎、池田俊介、米内義晴、加藤淳、宮本恭幸
- Organizer
  第71回応用物理学会学術講演会
- Place of Presentation
  長崎
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21760253
[Presentation] 再成長ソースを有するサブミクロンInP/InGaAs nMOSFETの電流電圧特性2010
- Author(s)
  若林和也、金澤徹、斎藤尚史、寺尾良輔、池田俊介、宮本恭幸、古屋一仁
- Organizer
  第57回応用物理学会関係連合講演会
- Place of Presentation
  平塚
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-21760253
[Presentation] InGaAs MISFET with epitaxially grown sourcce2010
- Author(s)
  Y. Miyamoto, T. Kanazawa, H. Saito
- Organizer
  The 3rd Int. Symp. Prganic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2010)
- Place of Presentation
  Toyama
- Year and Date
  2010-06-23
- Data Source
  KAKENHI-PROJECT-21760253
[Presentation] Al_2O_3ゲート絶縁膜を用いたInP/InGaAsコンポジットチャネルMOSFET2010
- Author(s)
  金澤徹、若林和也、斎藤尚史、田島智宣、池田俊介、宮本恭幸、古屋一仁
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  東京
- Year and Date
  2010-01-14
- Data Source
  KAKENHI-PROJECT-21760253
[Presentation] InP/InGaAs MOSFET with back-electrode structure bonded on Si substrate using a BCB adhesive layer2010
- Author(s)
  T. Kanazawa, R. Terao, Y. Yamaguchi, S. Ikeda, Y. Yonai, Y. Miyamoto
- Organizer
  2010 Int. Conf. Solid State Devices and Materials (SSDM 2010)
- Place of Presentation
  Tokyo
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-21760253
[Presentation] High-mobility MOSFET with submicron III-V channel2010
- Author(s)
  金澤徹
- Organizer
  Technical Meeting on Electron Devices, IEE of Japan
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2010-05-26
- Data Source
  KAKENHI-PROJECT-21760253
[Presentation] Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N+-InGaAs Source Region2009
- Author(s)
  金澤徹
- Organizer
  2009 Int.Conf.Solid State Devices and Materials(SSDM 2009)
- Place of Presentation
  Miyagi, Japan
- Year and Date
  2009-10-07
- Data Source
  KAKENHI-PROJECT-21760253
[Presentation] Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N^+-InGaAs Source REgion2009
- Author(s)
  T. Kanazawa, H. Saito, K. Wakabayashi, T. Tajima, R. Terao, Y. Miyamoto, K. Furuya
- Organizer
  2009 Int. Conf. Solide State Devices and Materials (SSDM 2009)
- Place of Presentation
  Sendai
- Year and Date
  2009-10-07
- Data Source
  KAKENHI-PROJECT-21760253
[Presentation] MOVPE再成長n^+-ソースを有するIII-V族高移動度チャネルMOSFET2009
- Author(s)
  金澤徹
- Organizer
  IEE of Japan(Special Session on Compound Semiconductor Electron Devices for More Moore More than Moore)
- Place of Presentation
  徳島市
- Year and Date
  2009-09-04
- Data Source
  KAKENHI-PROJECT-21760253
[Presentation] InP/INGaAs-channel MOSFET with MOVPE Selective Regrown Source2009
- Author(s)
  T. Kanazawa, K. Wakabayashi, H. Saito, R. Terao, T. Tajima, S. Ikeda, Y. Miyamoto, K.
- Organizer
  The 21st Int. Conf. Indium Phosphide and Related Materials (IPRM 2009)
- Place of Presentation
  Newport Beach, USA
- Year and Date
  2009-05-13
- Data Source
  KAKENHI-PROJECT-21760253
[Presentation] 再成長ソースを有するアンドープチャネルMOSFET2009
- Author(s)
  若林和也、金澤徹、斎藤尚史、寺尾良輔、田島智宣、宮本恭幸、古屋一仁
- Organizer
  第70回応用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-08
- Data Source
  KAKENHI-PROJECT-21760253
[Presentation] InP/InGaAs-channel MOSFET with MOVPE Selective Regrown Source2009
- Author(s)
  金澤徹
- Organizer
  The 21st Int.Conf.Indium Phosphide and Related Materials(IPRM2009)
- Place of Presentation
  Newport Beach, USA
- Year and Date
  2009-05-13
- Data Source
  KAKENHI-PROJECT-21760253
[Presentation] MOVEP再成長n^+-ソースを有するIII-V族高移動度チャネルMOSFET2009
- Author(s)
  金澤徹、斎藤尚史、若林和也、寺尾良輔、田島智宣、池田俊介、宮本恭幸、古屋一仁
- Organizer
  電気学会電気・情報・システム部門大会
- Place of Presentation
  徳島
- Year and Date
  2009-09-04
- Data Source
  KAKENHI-PROJECT-21760253
[Presentation] InGaAs MOSFET Source Structures Toward High Speed/low Power Applications
- Author(s)
  Y. Miyamoto, T. Kanazawa, Y. Yonai, A. Kato, M. Fujimatsu, M. Kashiwano , K. Ohsawa, and K. Ohashi
- Organizer
  26th International Conference on InP and Related Materials (IPRM 2014)
- Place of Presentation
  Montpellier, France
- Year and Date
  2014-05-11 – 2014-05-14
- Invited
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] Improvement of Interface Property of HfO2/Al2O3/In0.53Ga0.47As Using Nitrogen Plasma Cleaning and Hydrogen Annealing
- Author(s)
  S. Netsu, T. Kanazawa, and Y. Miyamoto
- Organizer
  27th International Conference on Indium Phosphide and Related Materials
- Place of Presentation
  Santa Barbara, CA
- Year and Date
  2015-06-28 – 2015-07-02
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] InGaAs tri-gate MOSFETs with MOVPE regrown source/drain
- Author(s)
  Y. Mishima, T. Kanazawa, H. Kinoshita, E. Uehara, and Y. Miyamoto
- Organizer
  72nd Device Research Conference (DRC)
- Place of Presentation
  Santa Barbara, CA
- Year and Date
  2014-06-22 – 2014-06-25
- Data Source
  KAKENHI-PROJECT-26249046
[Presentation] Growth Process for High Performance of InGaAs MOSFETs
- Author(s)
  Y. Miyamoto, T. Kanazawa, Y. Yonai, K. Ohsawa, Y. Mishima, T. Irisawa, M. Oda, and T. Tezuka
- Organizer
  72nd Device Research Conference (DRC)
- Place of Presentation
  Santa Barbara, CA
- Year and Date
  2014-06-22 – 2014-06-25
- Invited
- Data Source
  KAKENHI-PROJECT-26249046

1. MIYAMOTO Yasuyuki (40209953)

# of Collaborated Projects: 1 results

# of Collaborated Products: 11 results
2. 鈴木寿一 (80362028)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Kanazawa Toru 金澤 徹

KANAZAWA Toru 金澤 徹

Research Projects

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III-V/2D heterojunction tunneling transistorPrincipal Investigator

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Stacked short channel III-V MOSFETPrincipal Investigator

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Complementary vertical tunnel FET aiming for low voltage and high speed operation by heterostructure design and miniaturization

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3D InGaAs MOSFET with regrown source/drainPrincipal Investigator

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High performance III-V MOSFETs using MOVPE selectively regrown sourcePrincipal Investigator

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[Journal Article] Effect of increasing gate capacitance on performance of p-MoS2/HfS2 van der Waals heterostructure tunneling field-effect transistor2019

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[Journal Article] Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain2016

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[Journal Article] Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density2014

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[Journal Article] InP/InGaAs Composite Metal-Oxide-Semiconductor Firld-Effect Transistors with Regrown Source and Al_2O_3 gatedielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm2011

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[Journal Article] InP/InGaAs Composite MOSFETs with Regrown Source and Al_2O_3 gatedielectric Exhibiting Maximum Drain Current Exceeding 1.3 mA/μm2011

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[Journal Article] Submicron InP/InGaAs Composite-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Selectively Regrown n+-Source2010

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[Journal Article] Submicron InP/InGaAs Composite-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Selectively Regrown n^+-Source2010

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[Patent] 電界効果トランジスタ2010

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[Presentation] 埋め込みNiバックゲートを用いたp-MoS2/HfS2トンネルFET2018

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Kanazawa Toru 金澤徹

KANAZAWA Toru 金澤徹