AIKAWA SHINYA 相川慎也

… Alternative Names

相川慎也アイカワシンヤ

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Researcher Number	40637899
Other IDs
Affiliation (Current)	2025: 工学院大学, 工学部, 教授
Affiliation (based on the past Project Information) *help	2025: 工学院大学, 工学部, 教授 2022 – 2023: 工学院大学, 工学部, 准教授 2015: 工学院大学, 総合研究所, 助教 2014 – 2015: 工学院大学, 付置研究所, 助教 2013: 独立行政法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, ポスドク研究員 2012: 独立行政法人物質・材料研究機構, その他部局等, 研究員
Review Section/Research Field	Principal Investigator Basic Section 29020:Thin film/surface and interfacial physical properties-related / Thin film/Surface and interfacial physical properties / Thermal engineering
Keywords	Principal Investigator 透明導電膜 / 水素化 / アモルファス / 酸化物 / フレキシブル / ディスプレイ / 電子デバイス / ディスプレイ応用 / 半導体物性 / 表面・界面物性 … More / 酸化物半導体 / 薄膜トランジスタ / プラスチック基板 / ポリマー絶縁膜 / フレキシブルエレクトロニクス / カーボンナノチューブ Less

極性表面により室温動作を可能にする酸化膜トランジスタ型温室効果ガスセンサーの開発Principal Investigator
- Principal Investigator
  
  相川慎也
- Project Period (FY)
  2025 – 2027
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 29020:Thin film/surface and interfacial physical properties-related
- Research Institution
  Kogakuin University
Development of hydrogenated amorphous indium oxide-based transparent conductive oxide films with high mechanical flexibilityPrincipal Investigator
- Principal Investigator
  
  相川慎也
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 29020:Thin film/surface and interfacial physical properties-related
- Research Institution
  Kogakuin University
Control of thin-film transistor characteristics using amorphous oxide semiconductors of simple compositionPrincipal Investigator
- Principal Investigator
  
  AIKAWA SHINYA
- Project Period (FY)
  2014 – 2015
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Kogakuin University
Development of extremely flexible and transparent carbon nanotube devicesPrincipal Investigator
- Principal Investigator
  
  AIKAWA SHINYA
- Project Period (FY)
  2012 – 2013
- Research Category
  
  Grant-in-Aid for Research Activity Start-up
- Research Field
  
  Thermal engineering
- Research Institution
  National Institute for Materials Science

All 2024 2023 2022 2016 2015 2014 2013 2012

All Journal Article Presentation Book Patent

[Book] O Plus E2013
- Author(s)
  相川慎也，塚越一仁，丸山茂夫
- Publisher
  アドコム・メディア株式会社
- Data Source
  KAKENHI-PROJECT-24860018
[Book] 超フレキシブルで透明なカーボンナノチューブトランジスタO plus E (vol.35)2013
- Author(s)
  相川慎也,塚越一仁,丸山茂夫
- Publisher
  アドコム・メディア株式会社
- Data Source
  KAKENHI-PROJECT-24860018
[Journal Article] In2O3-based thin-film transistors with a (400) polar surface for CO2 gas detection at 150?°C2024
- Author(s)
  Nodera Ayumu、Aikawa Shinya
- Journal Title
  
  Materials Science and Engineering: B
  
  Volume: 299 Pages: 117034-117034
- DOI
  10.1016/j.mseb.2023.117034
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-22K04932
[Journal Article] The Influence of Oxygen‐Related Defects on the Formation of In2O3‐Based Low‐Fluorescence Transparent Conducting Film2023
- Author(s)
  Shimizu Maki、Shugo Masataka、Mori Shun、Hijikata Yasuto、Aikawa Shinya
- Journal Title
  
  physica status solidi (a)
  
  Volume: 220 Issue: 12 Pages: 2200896-2200896
- DOI
  10.1002/pssa.202200896
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-22K18292, KAKENHI-PROJECT-22K04932, KAKENHI-PROJECT-23K22787
[Journal Article] p-type conversion of distorted SnO<sub>x</sub> thin film by mild thermal annealing treatment in pure N<sub>2</sub> environment2022
- Author(s)
  Watanabe Kotaro、Kawaguchi Takuma、Aikawa Shinya
- Journal Title
  
  AIP Advances
  
  Volume: 12 Issue: 10 Pages: 105102-105102
- DOI
  10.1063/5.0103337
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-22K04932
[Journal Article] Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process2015
- Author(s)
  M.-F. Lin, X. Gao, N. Mitoma, T. Kizu, W. Ou-Yang, S. Aikawa, T. Nabatame, K. Tsukagoshi
- Journal Title
  
  AIP Adv.
  
  Volume: 5 Issue: 1 Pages: 017116-017116
- DOI
  10.1063/1.4905903
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26790051
[Journal Article] Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants2015
- Author(s)
  N. Mitoma, S. Aikawa, W. Ou-Yang, X. Gao, T. Kizu, M.-F. Lin, A. Fujiwara, T. Nabatame, K. Tsukagoshi
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 106 Issue: 4 Pages: 042106-042106
- DOI
  10.1063/1.4907285
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26790051
[Journal Article] Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors2015
- Author(s)
  K. Kurishima, T. Nabatame, M. Shimizu, N. Mitoma, T. Kizu, S. Aikawa, K. Tsukagoshi, A. Ohi, T. Chikyow, A. Ogura
- Journal Title
  
  J. Vac. Sci. Technol., A
  
  Volume: 33 Issue: 6 Pages: 061506-061506
- DOI
  10.1116/1.4928763
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-26790051
[Journal Article] Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors2015
- Author(s)
  S. Aikawa, N. Mitoma, T. Kizu, T. Nabatame, K. Tsukagoshi
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 106 Issue: 19 Pages: 192103-192103
- DOI
  10.1063/1.4921054
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26790051
[Journal Article] Stable amorphous In_2O_3-based thin-film transistors by incorporating SiO_2 to suppress oxygen vacancies2014
- Author(s)
  N. Mitoma, S. Aikawa, X. Gao, T. Kizu, M. Shimizu, M.-F. Lin, T. Nabatame, K. Tsukagoshi
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: vol.104 Issue: 10 Pages: 102103-102103
- DOI
  10.1063/1.4868303
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24860018, KAKENHI-PROJECT-26790051
[Journal Article] Self-formed copper oxide contact interlayer for high-performance oxide thin film transistors2014
- Author(s)
  X. Gao, S. Aikawa, N. Mitoma, M.-F. Lin, T. Kizu, T. Nabatame, K. Tsukagoshi
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 105 Issue: 2 Pages: 023503-023503
- DOI
  10.1063/1.4890312
- Peer Reviewed / Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-26790051
[Journal Article] Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability2014
- Author(s)
  T. Kizu, S. Aikawa, N. Mitoma, M. Shimizu, X. Gao, M.-F. Lin, T. Nabatame, K Tsukagoshi
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: vol.104 Issue: 15 Pages: 152103-152103
- DOI
  10.1063/1.4871511
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24860018, KAKENHI-PROJECT-26790051
[Journal Article] Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe_22014
- Author(s)
  M. Yamamoto, S. T. Wang, M. Ni, Y.-F. Lin, S.-L. Li, S. Aikawa, W.-B. Jian, K. Ueno, K. Wakabayashi, K. Tsukagoshi
- Journal Title
  
  ACS Nano
  
  Volume: vol.8 Issue: 4 Pages: 3895-3903
- DOI
  10.1021/nn5007607
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24860018, KAKENHI-PLANNED-25107004, KAKENHI-PLANNED-25107005
[Journal Article] Influence of Al2O3 gate dielectric on transistor properties for IGZO thin film transistor2014
- Author(s)
  K. Kurishima, T. Nabatame, M. Shimizu, S. Aikawa, K. Tsukagoshi, A. Ohi, T. Chikyo, A. Ogura
- Journal Title
  
  ECS Trans.
  
  Volume: 61 Issue: 4 Pages: 345-351
- DOI
  10.1149/06104.0345ecst
- Data Source
  KAKENHI-PROJECT-26790051
[Journal Article] Effects of dopants in InO_x-based amorphous oxide semiconductors for thin-film transistor applications2013
- Author(s)
  S. Aikawa, T. Nabatame, K. Tsukagoshi
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: vol.103 Issue: 17 Pages: 172105-172105
- DOI
  10.1063/1.4822175
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24860018
[Journal Article] Effect of Gas Pressure on the Density of Horizontally Aligned Single-Walled Carbon Nanotubes Grown on Quartz Substrates2013
- Author(s)
  T. Inoue, D. Hasegawa, S. Badar, S. Aikawa, S. Chiashi, S. Maruyama
- Journal Title
  
  Journal of Physical Chemistry C
  
  Volume: 117 Issue: 22 Pages: 11804-11810
- DOI
  10.1021/jp401681e
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J08717, KAKENHI-PROJECT-22226006, KAKENHI-PROJECT-23760179, KAKENHI-PROJECT-24860018, KAKENHI-PROJECT-25630063
[Journal Article] Thin-film transistors fabricated by low-temperature process based on Ga- and Zn-free amorphous oxide semiconductor2013
- Author(s)
  S. Aikawa, P. Darmawan, K. Yanagisawa, T. Nabatame, Y. Abe, K. Tsukagoshi
- Journal Title
  
  Appl. Phys. Lett
  
  Volume: vol.102 Issue: 10 Pages: 102101-102101
- DOI
  10.1063/1.4794903
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24860018
[Journal Article] Effect of Inrush Current on Carbon Nanotube Synthesis from Xylene by Liquid-Phase Pulsed Arc Method Using Copper Electrodes2013
- Author(s)
  T. Kizu, S. Aikawa, K. Takekoshi, E. Nishikawa
- Journal Title
  
  e-J. Surf. Sci. Nanotechnol.
  
  Volume: 11 Issue: 0 Pages: 8-12
- DOI
  10.1380/ejssnt.2013.8
- NAID
  130004438846
- ISSN
  1348-0391
- Language
  English
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24860018
[Journal Article] Temperature dependent thermal conductivity increase of aqueous nanofluid with single walled carbon nanotube inclusions2012
- Author(s)
  S. Harish, K. Ishikawa, E. Einarsson, S. Aikawa, T. Inoue, P. Zhao, M. Watanabe, S. Chiashi, J. Shiomi, S. Maruyama
- Journal Title
  
  Materials Express
  
  Volume: 2 Issue: 3 Pages: 213-223
- DOI
  10.1166/mex.2012.1074
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-11J08717, KAKENHI-PROJECT-22226006, KAKENHI-PROJECT-23760179, KAKENHI-PROJECT-24860018
[Journal Article] Influence of Pulse Condition in the Synthesis of Carbon Nanotubes Containing Tungsten by Arc Discharge in Water2012
- Author(s)
  K. Takekoshi, T. Kizu, S. Aikawa, M. Kanda, E. Nishikawa
- Journal Title
  
  Jpn. J. Appl. Phys
  
  Volume: vol.51 Issue: 12R Pages: 125102-125102
- DOI
  10.1143/jjap.51.125102
- NAID
  40019527655
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 薄膜トランジスタ、酸化物半導体、およびその製造方法2015
- Inventor(s)
  塚越一仁，相川慎也，木津たきお，清水麻希，三苫伸彦，生田目俊秀
- Industrial Property Rights Holder
  塚越一仁，相川慎也，木津たきお，清水麻希，三苫伸彦，生田目俊秀
- Industrial Property Rights Type
  特許
- Filing Date
  2015-01-23
- Overseas
- Data Source
  KAKENHI-PROJECT-26790051
[Patent] 薄膜トランジスタおよびその製造方法2014
- Inventor(s)
  相川慎也，塚越一仁，木津たきお，清水麻希，三苫伸彦，生田目俊秀
- Industrial Property Rights Holder
  相川慎也，塚越一仁，木津たきお，清水麻希，三苫伸彦，生田目俊秀
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-016634
- Filing Date
  2014-01-31
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 有機EL素子及びその製造方法2014
- Inventor(s)
  生田目俊秀,塚越一仁,相川慎也
- Industrial Property Rights Holder
  生田目俊秀,塚越一仁,相川慎也
- Industrial Property Rights Type
  特許
- Filing Date
  2014-03-28
- Overseas
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 薄膜トランジスタおよびその製造方法2014
- Inventor(s)
  塚越一仁,相川慎也,木津たきお, 清水麻希,三苫伸彦,生田目俊秀
- Industrial Property Rights Holder
  塚越一仁,相川慎也,木津たきお, 清水麻希,三苫伸彦,生田目俊秀
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-016273
- Filing Date
  2014-01-31
- Overseas
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 固定電荷を内部に誘起したゲート絶縁膜2014
- Inventor(s)
  生田目俊秀，相川慎也，木津たきお，清水麻希，三苫伸彦，塚越一仁
- Industrial Property Rights Holder
  生田目俊秀，相川慎也，木津たきお，清水麻希，三苫伸彦，塚越一仁
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-016633
- Filing Date
  2014-01-31
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 薄膜トランジスタの構造、薄膜トランジスタの製造方法および半導体装置2014
- Inventor(s)
  生田目俊秀，相川慎也，木津たきお，清水麻希，三苫伸彦，塚越一仁
- Industrial Property Rights Holder
  生田目俊秀，相川慎也，木津たきお，清水麻希，三苫伸彦，塚越一仁
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-016632
- Filing Date
  2014-01-31
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 薄膜トランジスタおよびその製造方法2014
- Inventor(s)
  相川慎也,塚越一仁,木津たきお, 清水麻希,三苫伸彦,生田目俊秀
- Industrial Property Rights Holder
  相川慎也,塚越一仁,木津たきお, 清水麻希,三苫伸彦,生田目俊秀
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-016634
- Filing Date
  2014-01-31
- Overseas
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 薄膜トランジスタ、薄膜トランジスタの製造方法および半導体装置2014
- Inventor(s)
  生田目俊秀，相川慎也，木津たきお，清水麻希，三苫伸彦，塚越一仁
- Industrial Property Rights Holder
  生田目俊秀，相川慎也，木津たきお，清水麻希，三苫伸彦，塚越一仁
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-016635
- Filing Date
  2014-01-31
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 酸化物半導体およびその製法2014
- Inventor(s)
  相川慎也，塚越一仁，木津たきお，清水麻希，三苫伸彦，生田目俊秀
- Industrial Property Rights Holder
  相川慎也，塚越一仁，木津たきお，清水麻希，三苫伸彦，生田目俊秀
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-016631
- Filing Date
  2014-01-31
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 薄膜トランジスタおよびその製造方法2014
- Inventor(s)
  生田目俊秀，塚越一仁，相川慎也，知京豊裕
- Industrial Property Rights Holder
  生田目俊秀，塚越一仁，相川慎也，知京豊裕
- Industrial Property Rights Type
  特許
- Filing Date
  2014-05-02
- Overseas
- Data Source
  KAKENHI-PROJECT-26790051
[Patent] 薄膜トランジスタの構造,薄膜トランジスタの製造方法および半導体装置2014
- Inventor(s)
  生田目俊秀,相川慎也,木津たきお,清水麻希,三苫伸彦,塚越一仁
- Industrial Property Rights Holder
  生田目俊秀,相川慎也,木津たきお,清水麻希,三苫伸彦,塚越一仁
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-016632
- Filing Date
  2014-01-31
- Overseas
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 薄膜トランジスタおよびその製造方法2014
- Inventor(s)
  生田目俊秀，塚越一仁，相川慎也
- Industrial Property Rights Holder
  生田目俊秀，塚越一仁，相川慎也
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-016266
- Filing Date
  2014-01-31
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 酸化物薄膜トランジスタおよびその製造方法2014
- Inventor(s)
  塚越一仁，相川慎也，木津たきお，清水麻希，三苫伸彦，生田目俊秀
- Industrial Property Rights Holder
  塚越一仁，相川慎也，木津たきお，清水麻希，三苫伸彦，生田目俊秀
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-016630
- Filing Date
  2014-01-31
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 薄膜トランジスタおよびその製造方法2014
- Inventor(s)
  生田目俊秀,塚越一仁,相川慎也
- Industrial Property Rights Holder
  生田目俊秀,塚越一仁,相川慎也
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-016266
- Filing Date
  2014-01-31
- Overseas
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 薄膜トランジスタおよびその製造方法2014
- Inventor(s)
  塚越一仁，相川慎也，木津たきお，清水麻希，三苫伸彦，生田目俊秀
- Industrial Property Rights Holder
  塚越一仁，相川慎也，木津たきお，清水麻希，三苫伸彦，生田目俊秀
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-016273
- Filing Date
  2014-01-31
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 酸化物薄膜トランジスタおよびその製造方法2014
- Inventor(s)
  塚越一仁,相川慎也,木津たきお, 清水麻希,三苫伸彦,生田目俊秀
- Industrial Property Rights Holder
  塚越一仁,相川慎也,木津たきお, 清水麻希,三苫伸彦,生田目俊秀
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-016630
- Filing Date
  2014-01-31
- Overseas
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 有機ＥＬ素子及びその製造方法2014
- Inventor(s)
  生田目俊秀，塚越一仁，相川慎也
- Industrial Property Rights Holder
  生田目俊秀，塚越一仁，相川慎也
- Industrial Property Rights Type
  特許
- Filing Date
  2014-03-28
- Overseas
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 薄膜トランジスタ,薄膜トランジスタの製造方法および半導体装置2014
- Inventor(s)
  生田目俊秀,相川慎也,木津たきお,清水麻希,三苫伸彦,塚越一仁
- Industrial Property Rights Holder
  生田目俊秀,相川慎也,木津たきお,清水麻希,三苫伸彦,塚越一仁
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-016635
- Filing Date
  2014-01-31
- Overseas
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 固定電荷を内部に誘起したゲート絶縁膜2014
- Inventor(s)
  生田目俊秀,相川慎也,木津たきお,清水麻希,三苫伸彦,塚越一仁
- Industrial Property Rights Holder
  生田目俊秀,相川慎也,木津たきお,清水麻希,三苫伸彦,塚越一仁
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-016633
- Filing Date
  2014-01-31
- Overseas
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 酸化物半導体およびその製法2014
- Inventor(s)
  相川慎也,塚越一仁,木津たきお, 清水麻希,三苫伸彦,生田目俊秀
- Industrial Property Rights Holder
  相川慎也,塚越一仁,木津たきお, 清水麻希,三苫伸彦,生田目俊秀
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2014-016631
- Filing Date
  2014-01-31
- Overseas
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 薄膜トランジスタ,薄膜トランジスタの製造方法および半導体装置2013
- Inventor(s)
  塚越一仁,ピーターダルマワン, 相川慎也,生田目俊秀,柳沢佳一
- Industrial Property Rights Holder
  塚越一仁,ピーターダルマワン, 相川慎也,生田目俊秀,柳沢佳一
- Industrial Property Rights Type
  特許
- Filing Date
  2013-06-13
- Overseas
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 薄膜トランジスタ、薄膜トランジスタの製造方法および半導体装置2013
- Inventor(s)
  塚越一仁，ピーターダルマワン，相川慎也，生田目俊秀，柳沢佳一
- Industrial Property Rights Holder
  塚越一仁，ピーターダルマワン，相川慎也，生田目俊秀，柳沢佳一
- Industrial Property Rights Type
  特許
- Filing Date
  2013-06-13
- Overseas
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 有機ＥＬ素子及びその製造方法2013
- Inventor(s)
  生田目俊秀，塚越一仁，相川慎也
- Industrial Property Rights Holder
  生田目俊秀，塚越一仁，相川慎也
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-068164
- Filing Date
  2013-03-28
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 有機EL素子及びその製造方法2013
- Inventor(s)
  生田目俊秀,塚越一仁,相川慎也
- Industrial Property Rights Holder
  生田目俊秀,塚越一仁,相川慎也
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-067801
- Filing Date
  2013-03-28
- Overseas
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 有機EL素子2013
- Inventor(s)
  生田目俊秀,塚越一仁,相川慎也
- Industrial Property Rights Holder
  生田目俊秀,塚越一仁,相川慎也
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-067782
- Filing Date
  2013-03-28
- Overseas
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 有機EL素子及びその製造方法2013
- Inventor(s)
  生田目俊秀,塚越一仁,相川慎也
- Industrial Property Rights Holder
  生田目俊秀,塚越一仁,相川慎也
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-068164
- Filing Date
  2013-03-28
- Overseas
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 薄膜トランジスタおよびその製造方法2013
- Inventor(s)
  生田目俊秀，塚越一仁，相川慎也
- Industrial Property Rights Holder
  生田目俊秀，塚越一仁，相川慎也
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-099284
- Filing Date
  2013-05-09
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 有機ＥＬ素子2013
- Inventor(s)
  生田目俊秀，塚越一仁，相川慎也
- Industrial Property Rights Holder
  生田目俊秀，塚越一仁，相川慎也
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-067782
- Filing Date
  2013-03-28
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 薄膜トランジスタおよびその製造方法2013
- Inventor(s)
  生田目俊秀,塚越一仁,相川慎也
- Industrial Property Rights Holder
  生田目俊秀,塚越一仁,相川慎也
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-099284
- Filing Date
  2013-05-09
- Overseas
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 薄膜トランジスタおよびその製造方法2013
- Inventor(s)
  生田目俊秀，塚越一仁，相川慎也，知京豊裕
- Industrial Property Rights Holder
  生田目俊秀，塚越一仁，相川慎也，知京豊裕
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-139425
- Filing Date
  2013-07-03
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 薄膜トランジスタおよびその製造方法2013
- Inventor(s)
  生田目俊秀,塚越一仁,相川慎也, 知京豊裕
- Industrial Property Rights Holder
  生田目俊秀,塚越一仁,相川慎也, 知京豊裕
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-139425
- Filing Date
  2013-07-03
- Overseas
- Data Source
  KAKENHI-PROJECT-24860018
[Patent] 有機ＥＬ素子及びその製造方法2013
- Inventor(s)
  生田目俊秀，塚越一仁，相川慎也
- Industrial Property Rights Holder
  生田目俊秀，塚越一仁，相川慎也
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2013-067801
- Filing Date
  2013-03-28
- Data Source
  KAKENHI-PROJECT-24860018
[Presentation] RFマグネトロンスパッタ法で作製したSnO2:N薄膜のバルク内酸素空孔低減及びバルク内組成の評価2024
- Author(s)
  川口拓真，大石竜嗣，清水麻希，土方泰斗，相川慎也
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] In2O3系透明導電膜へのHドーピングによる柔軟性劣化機構2024
- Author(s)
  木菱完太，山寺真理，小林翔，野寺歩，鷹野一朗，相川慎也
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] 金属Sn薄膜の硫化時圧力に依存するSnS表面形態の評価2024
- Author(s)
  渡邉大輝，守屋賢人，相川慎也
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] SnO2スパッタターゲットを用いたSnO製作：Ar/H2および真空中ポストアニールの比較2024
- Author(s)
  小林翔，川口拓真，木菱完太，相川慎也
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Enhancement of CO2 Gas Sensitivity in In2O3 Thin Film Transistor with a Polar Surface2024
- Author(s)
  A. Nodera, S. Aikawa
- Organizer
  18th International Thin-Film Transistor Conference (ITC 2024)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] 低温Deep UV照射処理されたB-doped In2O3 TFT2024
- Author(s)
  山寺真理，木菱完太，相川慎也
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] p型アモルファスTaSnOの電気特性に及ぼすスパッタ成膜条件探索2024
- Author(s)
  石田哲也，柿澤立樹，小林翔，川口拓真，曹晨亭，辛佳和，鷹野一朗，相川慎也
- Organizer
  表面技術協会第149回講演大会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] 金属Snを硫化アニールし作製したSnSO4の評価：硫化中の酸素圧力依存2024
- Author(s)
  守屋賢人，渡邉大輝，川口拓真，相川慎也
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] 低蛍光強度の透明導電膜を用いたNVセンタの電荷制御2024
- Author(s)
  大石竜嗣，木菱完太，土方泰斗，波多野睦子，牧野俊晴，相川慎也，清水麻希
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] SnO層間へのNH3分子インターカレーションの試み2024
- Author(s)
  辛佳和，石田哲也，小林翔，相川慎也
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] スパッタ成膜したスズ酸化物と電極間の界面抵抗評価2024
- Author(s)
  林遥大，川口拓真，小林翔，山寺真理，石田哲也，曹晨亭，相川慎也
- Organizer
  表面技術協会第149回講演大会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] PVA抵抗変化メモリにおけるNaCl添加の作用2024
- Author(s)
  岩澤侑司，大沢遼輝，Le Duc Huy，相川慎也
- Organizer
  2024年第71回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Mist CVD法により成長したα-In2O3薄膜の低キャリア濃度化とMOSFET製作2023
- Author(s)
  田口義士，山寺真理，山本拓実，林佑哉，村山衛，小川広太郎，本田徹，尾沼猛儀，金子健太郎，相川慎也，藤田静雄，山口智広
- Organizer
  2023年第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] 低濃度水素雰囲気中スパッタとアニールを用いたSnO2ターゲットからのSnO製作2023
- Author(s)
  小林翔，木菱完太，川口拓真，相川慎也
- Organizer
  電気学会　電子材料研究会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] EB照射および熱処理によるC60ナノワイヤの電気・構造的変化2023
- Author(s)
  村野海渡，相川慎也，塚越一仁
- Organizer
  2023年第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] 熱処理不要なIn2O3系TFT実現に向けたBドーピング2023
- Author(s)
  山寺真理，木菱完太，野寺歩夢，熊本勇紀，森俊，相川慎也
- Organizer
  2023年第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Ar/H2雰囲気中でスパッタ成膜したSnO2薄膜の特性評価2023
- Author(s)
  小林翔，渡辺幸太郎，川口拓真，石田哲也，相川慎也
- Organizer
  2023年第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Toward CO2 sensors based on In2O3 thin-film transistors2023
- Author(s)
  A. Nodera, S. Aikawa
- Organizer
  International Symposium of the Vacuum Society of the Philippines (ISVSP)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] 溶液プロセスで作製したLaドープIn2O3薄膜トランジスタのCO2センシング特性2023
- Author(s)
  小林亮太，野寺歩夢，永井裕己，相川慎也
- Organizer
  電気学会　電子材料研究会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Sn-doped α-Ga2O3 Films Grown Using Sn Source Solutions with Different Aging Times and Their Electrical Properties2023
- Author(s)
  Ko. Yamada, T. Yamamoto, R. Yamada, Ka. Yamada, H. Nagai, S. Aikawa, T. Onuma, T. Honda, T. Yamaguchi
- Organizer
  The 22nd International Symposium on Advanced Technology (ISAT-22)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] N2およびAr/H2アニールによるSnOx薄膜の還元状態の比較2023
- Author(s)
  渡辺幸太郎，川口拓真，山口智広，尾沼猛義，本田徹，相川慎也
- Organizer
  2023年第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] 硫黄蒸気輸送アニールを用いた金属Sn薄膜の硫化とその評価2023
- Author(s)
  渡邉大輝，守屋賢人，相川慎也
- Organizer
  電気学会　電子材料研究会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] TiOx系ReRAM特性におけるアニール温度の影響2023
- Author(s)
  池田翔，大沢遼輝，相川慎也
- Organizer
  2023年第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Fabrication of Tin Oxide/nitrogen-doped Titanium Dioxide Heterojunction Thin Films2023
- Author(s)
  M. Martinez, M. Vasquez Jr., T. Yamaguchi, S. Aikawa
- Organizer
  International Symposium of the Vacuum Society of the Philippines (ISVSP)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] 溶液プロセスで作製したLaドープIn2O3薄膜トランジスタのCO2ガス感度ドーパント濃度依存2023
- Author(s)
  小林亮太，野寺歩夢，相川慎也
- Organizer
  2023年第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Depth profiling of SnO2:N thin films fabricated by RF magnetron sputtering in N2 atmosphere2023
- Author(s)
  T. Kawaguchi, T. Kobayashi, S. Aikawa
- Organizer
  36th International Microprocesses and Nanotechnology Conference (MNC 2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] HドープがIn2O3系アモルファス透明導電膜の柔軟性に与える影響2023
- Author(s)
  木菱完太，山寺真理，小林翔，鷹野一朗，相川慎也
- Organizer
  2023年第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] InZnO TFT CO2ガスセンサーにおけるZn濃度と膜厚の影響2023
- Author(s)
  野寺歩夢，小林亮太，小林翔，相川慎也
- Organizer
  電気学会　電子材料研究会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] CO2 gas sensing using thin-film transistors with co-sputtered In2O3/CaO reactive channel2023
- Author(s)
  A. Nodera, S. Mori, S. Aikawa
- Organizer
  7th International Conference on Advances in Functional Materials (AFM 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Ar/N2混合ガス中スパッタリングで堆積したSnOx薄膜におけるバルク内N2の評価2023
- Author(s)
  川口拓真，小林翔，相川慎也
- Organizer
  2023年第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Hole generation mechanism in n-type SnOx after N2 post-deposition annealing2023
- Author(s)
  K. Watanabe, T. Kawaguchi, A. Nodera, Y. Kumamoto, S. Mori, S. Aikawa
- Organizer
  7th International Conference on Advances in Functional Materials (AFM 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] 硫黄蒸気輸送アニールを用いたSnS薄膜の作製と評価2023
- Author(s)
  渡邉大輝，渡辺幸太郎，川口拓真，相川慎也
- Organizer
  2023年第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] LaドープIn2O3薄膜トランジスタ特性の測定環境依存2023
- Author(s)
  小林亮太，野寺歩夢，相川慎也
- Organizer
  2023年第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] La concentration dependence of CO2 sensitivity in solution-processed La-doped In2O3 thin-film transistors2023
- Author(s)
  R. Kobayashi, A. Nodera, S. Aikawa
- Organizer
  36th International Microprocesses and Nanotechnology Conference (MNC 2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] 還元雰囲気中スパッタによるSnO2ターゲットからのSnO製作2023
- Author(s)
  小林翔，川口拓真，木菱完太，相川慎也
- Organizer
  2023年第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] PET基板上に室温スパッタ成膜したBドープIn2O3透明導電膜の酸素分圧最適化2023
- Author(s)
  森峻，木菱完太，山寺真理，野寺歩夢，渡辺幸太郎，鷹野一朗，相川慎也
- Organizer
  2023年第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] CO2ガスセンシング特性に及ぼすInZnO TFTのZn濃度の影響2023
- Author(s)
  野寺歩夢，小林亮太，山寺真理，木菱完太，小林翔，相川慎也
- Organizer
  2023年第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Correlation between CO2 sensitivity and Zn concentration in InZnO thin-film transistors2023
- Author(s)
  A. Nodera, R. Kobayashi, T. Kobayashi, S. Aikawa
- Organizer
  MRM2023/IUMRS-ICA2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] SiOx層挿入によるTiOx系ReRAMの動作安定化2023
- Author(s)
  大沢遼輝，岩澤侑司，相川慎也
- Organizer
  2023年第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Co-doping of hydrogen and boron in In2O3 toward highly flexible and transparent conducting oxide film2023
- Author(s)
  K. Kibishi, S. Yamadera, T. Kobayashi, I. Takano, S. Aikawa
- Organizer
  36th International Microprocesses and Nanotechnology Conference (MNC 2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] B含有In2O3へ水素ドーピングによる機械的柔軟性への効果2023
- Author(s)
  木菱完太，山寺真理，小林翔，鷹野一朗，相川慎也
- Organizer
  電気学会　電子材料研究会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Fabrication of top-down and bottom-up MOSFET using α-In2O3 films grown by Mist CVD2023
- Author(s)
  Y. Hayashi, A. Taguchi, S. Yamadera, T. Yamamoto, S. Aikawa, T. Onuma, H. Honda, T. Yamaguchi
- Organizer
  The 22nd International Symposium on Advanced Technology (ISAT-22)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] N2雰囲気中RFマグネトロンスパッタリングで作製したSnO2:N薄膜の特性評価2023
- Author(s)
  川口拓真，相川慎也
- Organizer
  電気学会　電子材料研究会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Ar/N2混合ガス中スパッタリングで堆積したSnOx薄膜におけるN2濃度の影響2023
- Author(s)
  川口拓真，渡辺幸太郎，永井裕己，山口智広，尾沼猛儀，本田徹，相川慎也
- Organizer
  2023年第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Improvement of hysteresis on as-deposited B-doped In2O3 TFTs under O2 plasma exposure2023
- Author(s)
  S. Yamadera, K. Kibishi, S. Aikawa
- Organizer
  MRM2023/IUMRS-ICA2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] コスパッタ材料としてCaOおよびCaF2を用いたCa添加In2O3 TFTの作製と評価2023
- Author(s)
  野寺歩夢，森峻, 相川慎也
- Organizer
  2023年第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Fabrication of SnO Thin Film by Sputtering in Low-Concentration Reducing H2 Atmosphere2023
- Author(s)
  T. Kobayashi, T. Kawaguchi, K. Kibishi, S. Aikawa
- Organizer
  MRM2023/IUMRS-ICA2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Electrical property improvement of Pt-free TiOx-based ReRAM devices using ultrathin SiOx interlayers2023
- Author(s)
  H. Osawa, Y. Iwasawa, S. Aikawa
- Organizer
  MRM2023/IUMRS-ICA2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Reduction of remaining hysteresis in unannealed B-doped In2O3 TFTs by O2 plasma2023
- Author(s)
  S. Yamadera, K. Kibishi, A. Nodera, S. Aikawa
- Organizer
  36th International Microprocesses and Nanotechnology Conference (MNC 2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] 室温製作されたB-doped In2O3 TFTへのO2 plasma処理2023
- Author(s)
  山寺真理，木菱完太，野寺歩夢，相川慎也
- Organizer
  2023年第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Effect of In2O3 Channel Thickness in TFT Gas Sensor for CO2 Sensing Characteristics2023
- Author(s)
  A. Nodera, R. Kobayashi, S. Yamadera, K. Kibishi, T. Kobayashi, S. Aikawa
- Organizer
  36th International Microprocesses and Nanotechnology Conference (MNC 2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] N2 concentration dependence of electrical conduction in partially nitrided SnOx thin-films deposited by reactive RF magnetron sputtering2023
- Author(s)
  T. Kawaguchi, K. Watanabe, S. Aikawa
- Organizer
  7th International Conference on Advances in Functional Materials (AFM 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Investigation of Sulfurization Temperature of Metal Sn Thin-Film for High-Quality SnS Synthesis2023
- Author(s)
  D. Watanabe, K. Moriya, S. Aikawa
- Organizer
  MRM2023/IUMRS-ICA2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Improvement of mechanical flexibility using completely amorphous B-doped In2O3 transparent conductive thin films2023
- Author(s)
  S. Mori, K. Watanabe, K. Murano, S. Aikawa
- Organizer
  7th International Conference on Advances in Functional Materials (AFM 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] BドープIn2O3透明導電膜への水素ドーピングによる電気特性向上2023
- Author(s)
  木菱完太，山寺真理，森峻，相川慎也
- Organizer
  2023年第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] CO2 Gas Sensing by In2O3-Based Thin-Film Transistors2022
- Author(s)
  A. Nodera, S. Mori, S. Aikawa
- Organizer
  The 21st International Symposium on Advanced Technology (ISAT-21)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Optimization of N2 concentration in Ar/N2 sputtering deposition for p-type N-doped SnOx thin-film2022
- Author(s)
  T. Kawaguchi, K. Watanabe, T. Yamaguchi, T. Onuma, T. Honda, S. Aikawa
- Organizer
  35th International Microprocesses and Nanotechnology Conference (MNC 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Comparative study of room-temperature deposited ITO and B-doped In2O3 on PET for flexible transparent electrode application2022
- Author(s)
  S. Mori, K. Kibishi, S. Yamadera, A. Nodera, K. Watanabe, I. Takano, S. Aikawa
- Organizer
  35th International Microprocesses and Nanotechnology Conference (MNC 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Room-temperature deposited flexible B-doped In2O3 transparent conductive film2022
- Author(s)
  S. Mori, K. Kibishi, S. Yamadera, A. Nodera, K. Watanabe, I. Takano, S. Aikawa
- Organizer
  The 21st International Symposium on Advanced Technology (ISAT-21)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Deposition of nitrogen-doped titanium dioxide thin films via rf magnetron sputtering2022
- Author(s)
  M. Martinez, T. Onuma, H. Nagai, T. Honda, S. Aikawa, T. Yamaguchi, M. Vasquez Jr.
- Organizer
  The 21st International Symposium on Advanced Technology (ISAT-21)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Indium oxide-based thin film transistor with high CO2 sensitive (400) plane2022
- Author(s)
  A. Nodera, S. Mori, S. Aikawa
- Organizer
  2022 International Conference on Solid State Devices and Materials (SSDM 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Room-temperature processable highly amorphous transparent B-doped In2O3 for use as a flexible conductive film2022
- Author(s)
  S. Mori, A. Nodera, K. Watanabe, K. Murano, S. Aikawa
- Organizer
  2022 International Conference on Solid State Devices and Materials (SSDM 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] 窒素アニール還元反応によるSnOx薄膜の局所結合状態2022
- Author(s)
  渡辺幸太郎，川口拓真，山口智広，尾沼猛義，本田徹，相川慎也
- Organizer
  2022年第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] In2O3結晶相転移によるTFT型CO2ガスセンサーの特性向上2022
- Author(s)
  野寺歩夢，森峻，永井裕己，相川慎也
- Organizer
  2022年第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Ar/N2混合雰囲気でスパッタ成膜した部分窒化SnOxの特性評価2022
- Author(s)
  川口拓真，渡辺幸太郎，山口智広，尾沼猛儀，本田徹，相川慎也
- Organizer
  2022年第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Experimental investigation of the local bonding states of nitrogen-doped SnOx thin-film2022
- Author(s)
  K. Watanabe, T. Kawaguchi, T. Yamaguchi, T. Onuma, T. Honda, S. Aikawa
- Organizer
  35th International Microprocesses and Nanotechnology Conference (MNC 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] XPS analysis of the binding states in nitrogen-doped SnOx thin-films deposited by RF magnetron sputtering in N2 atmosphere2022
- Author(s)
  T. Kawaguchi, K. Watanabe, S. Aikawa
- Organizer
  The 21st International Symposium on Advanced Technology (ISAT-21)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Nitrogen incorporation in SnO2 matrix for passivation of oxygen vacancy and hole generation2022
- Author(s)
  K. Watanabe, T. Kawaguchi, S. Aikawa
- Organizer
  2022 International Conference on Solid State Devices and Materials (SSDM 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] PET基板上に成膜したITOおよびBドープIn2O3のフレキシブル透明導電膜としての特性比較2022
- Author(s)
  森峻，木菱完太, 山寺真理, 野寺歩夢, 渡辺幸太郎，鷹野一朗, 相川慎也
- Organizer
  2022年第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Partial reduction of weakly-bonded oxygen in SnOx thin films by dissociated nitrogen atoms2022
- Author(s)
  K. Watanabe, T. Kawaguchi, S. Aikawa
- Organizer
  The 21st International Symposium on Advanced Technology (ISAT-21)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] Crystal-plane dependence of CO2 sensitivity on In2O3-based thin-film transistors2022
- Author(s)
  A. Nodera, S. Mori, S. Aikawa
- Organizer
  35th International Microprocesses and Nanotechnology Conference (MNC 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04932
[Presentation] 二層InSiO薄膜トランジスタの水素還元とオゾン酸化効果2016
- Author(s)
  木津たきお，相川慎也，生田目俊秀，塚越一仁
- Organizer
  2016年第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学，東京
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-26790051
[Presentation] Low-temperature Processable Amorphous In-W-O Thin-film Transistors2015
- Author(s)
  T. Kizu, S. Aikawa, N. Mitoma, M. Shimizu, X. Gao, M-F. Lin, T. Nabatame, K. Tsukagoshi
- Organizer
  The 9th International Conference on the Science and Technology for Advanced Ceramics and The 9th Symposium on Transparent Oxide and Related Materials for Electronics and Optics
- Place of Presentation
  Ibaraki, Japan
- Year and Date
  2015-10-20
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-26790051
[Presentation] 二層InSiO構造を用いた薄膜トランジスタ2015
- Author(s)
  木津たきお，相川慎也，生田目俊秀，塚越一仁
- Organizer
  2015年第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場，愛知
- Year and Date
  2015-09-15
- Data Source
  KAKENHI-PROJECT-26790051
[Presentation] 過剰酸素の抑制による真空環境で安定なIn-Si-O TFT2015
- Author(s)
  相川慎也，三苫伸彦，木津たきお，生田目俊秀，塚越一仁
- Organizer
  2015年第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場，愛知
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-26790051
[Presentation] アモルファス酸化インジウム薄膜トランジスタにおける電荷密度および移動度の添加元素依存性2015
- Author(s)
  三苫伸彦，相川慎也，欧陽威，高旭，木津たきお，林孟芳，藤原明比古，生田目俊秀，塚越一仁
- Organizer
  2015年第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学，神奈川
- Year and Date
  2015-03-11
- Data Source
  KAKENHI-PROJECT-26790051
[Presentation] PE-ALD法で作製したAl2O3絶縁膜を用いたIGZO-TFTの電気特性の変化2014
- Author(s)
  栗島一徳，生田目俊秀，清水麻希，相川慎也，塚越一仁，大井暁彦，知京豊裕，小椋厚志
- Organizer
  第19回ゲートスタック研究会
- Place of Presentation
  ニューウェルシティー湯河原（静岡）
- Data Source
  KAKENHI-PROJECT-24860018
[Presentation] 低温プロセスで高移動度かつ高安定なa-InWO TFT2014
- Author(s)
  木津たきお，相川慎也，三苫伸彦，清水麻希，高旭，林孟芳，生田目俊秀，塚越一仁
- Organizer
  2014年第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学，北海道
- Year and Date
  2014-09-18
- Data Source
  KAKENHI-PROJECT-26790051
[Presentation] PE-ALD法で作製したAl2O3絶縁膜を用いたIGZO-TFTの電気特性の変化2014
- Author(s)
  栗島一徳,生田目俊秀,清水麻希,相川慎也,塚越一仁,大井暁彦,知京豊裕,小椋厚志
- Organizer
  第19回ゲートスタック研究会
- Place of Presentation
  ニューウェルシティー湯河原,静岡
- Year and Date
  2014-01-24
- Data Source
  KAKENHI-PROJECT-24860018
[Presentation] PE-ALD法で作製したAl2O3絶縁膜を用いたIGZO-TFTの電気特性2014
- Author(s)
  栗島一徳，生田目俊秀，清水麻希，相川慎也，塚越一仁，大井暁彦，知京豊裕，小椋厚志
- Organizer
  2014年春季応用物理学会
- Place of Presentation
  青山学院大学（神奈川）
- Data Source
  KAKENHI-PROJECT-24860018
[Presentation] PE-ALD法で作製したAl2O3絶縁膜を用いたIGZO-TFTの電気特性2014
- Author(s)
  栗島一徳,生田目俊秀,清水麻希,相川慎也,塚越一仁,大井暁彦,知京豊裕,小椋厚志
- Organizer
  2014年第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学,神奈川
- Year and Date
  2014-03-19
- Data Source
  KAKENHI-PROJECT-24860018
[Presentation] Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor2014
- Author(s)
  K. Kurishima, T. Nabatame, M. Shimizu, S. Aikawa, K. Tsukagoshi, A. Ohi, T. Chikyow, A. Ogura
- Organizer
  225th ECS Meeting
- Place of Presentation
  Orlando, Florida, USA
- Year and Date
  2014-05-14
- Data Source
  KAKENHI-PROJECT-26790051
[Presentation] Influence of electrical properties for IGZO TFT with Al2O3 gate insulators by PE-ALD method2014
- Author(s)
  K. Kurishima, T. Nabatame, M. Shimizu, S. Aikawa, K. Tsukagoshi, A. Ohi, T. Chikyo, A. Ogura
- Organizer
  14th International Conference on Atomic Layer Deposition 2014
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2014-06-04
- Data Source
  KAKENHI-PROJECT-26790051
[Presentation] Influence of electrical properties for IGZO TFT with Al2O3 gate insulators by PE-ALD method2014
- Author(s)
  K. Kurishima, T. Nabatame, M. Shimizu, S. Aikawa, K. Tsukagoshi, A. Ohi, T. Chikyo, A. Ogura
- Organizer
  14th International Conference on Atomic Layer Deposition 2014
- Place of Presentation
  Hotel Granvia Kyoto (Kyoto, Japan)
- Data Source
  KAKENHI-PROJECT-24860018
[Presentation] Influence of Al2O3 Gate Dielectric on Transistor Properties for Igzo Thin Film Transistor2014
- Author(s)
  K. Kurishima, T. Nabatame, M. Shimizu, S. Aikawa, K. Tsukagoshi, A. Ohi, T. Chikyow, A. Ogura
- Organizer
  225th ECS Meeting
- Place of Presentation
  Hilton Bonnet Creek (Orlando, Florida, USA)
- Data Source
  KAKENHI-PROJECT-24860018
[Presentation] シリコン添加により制御された酸化インジウム薄膜トランジスタ2014
- Author(s)
  三苫伸彦，相川慎也，高旭，木津たきお，清水麻希，林孟芳，生田目俊秀，塚越一仁
- Organizer
  2014年第75回応用物理学会秋季学術講演会
- Place of Presentation
  北海道大学，北海道
- Year and Date
  2014-09-18
- Data Source
  KAKENHI-PROJECT-26790051
[Presentation] Transport characteristics for nitrogen-doped horizontally aligned single-walled carbon nanotubes2013
- Author(s)
  S.J. Kim, T. Thurakitseree, S. Aikawa, T. Inoue, S. Chiashi, S. Maruyama
- Organizer
  4th A3 Symposium on Emerging Materials: Nanomaterials for Energy and Electronics
- Place of Presentation
  Daemyung Resort (Jeju Island, Korea)
- Data Source
  KAKENHI-PROJECT-24860018
[Presentation] Highly Stable n-Doped Graphene Field-Effect Transistors via Polyvinyl Alcohol Films2013
- Author(s)
  S.J. Kim, T. Thurakitseree, S. Aikawa, T. Inoue, S. Chiashi, S. Maruyama
- Organizer
  5th International Conferences on Recent Progress in Graphene Research
- Place of Presentation
  Tokyo, Japan
- Year and Date
  2013-09-12
- Data Source
  KAKENHI-PROJECT-24860018
[Presentation] Highly Stable n-Doped Graphene Field-Effect Transistors via Polyvinyl Alcohol Films2013
- Author(s)
  S.J. Kim, P. Zhao, S. Aikawa, E. Einarsson, S. Chiashi, S. Maruyama
- Organizer
  5th International Conferences on Recent Progress in Graphene Research
- Place of Presentation
  Tokyo Institute of Technology (Tokyo, Japan)
- Data Source
  KAKENHI-PROJECT-24860018
[Presentation] Transport characteristics for nitrogen-doped horizontally aligned single-walled carbon nanotubes2013
- Author(s)
  S.J. Kim, T. Thurakitseree, S. Aikawa, T. Inoue, S. Chiashi, S. Maruyama
- Organizer
  4th A3 Symposium on Emerging Materials : Nanomaterials for Energy and Electronics
- Place of Presentation
  Jeju Island, Korea
- Data Source
  KAKENHI-PROJECT-24860018
[Presentation] Fabrication of Flexible Graphene Field-Effect Transistors with Single-Walled Carbon Nanotube Electrodes2012
- Author(s)
  S.J. Kim, S. Aikawa, P. Zhao, B. Hou, E. Einarsson, S. Chiashi, S. Maruyama
- Organizer
  2012 MRS Fall Meeting
- Place of Presentation
  Boston, Massachusetts, USA
- Year and Date
  2012-11-29
- Data Source
  KAKENHI-PROJECT-24860018
[Presentation] 水中アーク放電を用いた金属内包カーボンナノチューブ合成における陰極金属の沸点の影響2012
- Author(s)
  竹腰健太郎,木津たきお,相川慎也,西川英一
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学,愛媛
- Year and Date
  2012-09-11
- Data Source
  KAKENHI-PROJECT-24860018
[Presentation] Influence of Polymer Coating on Device Properties of Carbon Nanotube Field-Effect Transistors2012
- Author(s)
  S. Aikawa, T. Inoue, E. Einarsson, S. Chiashi, S. Maruyama
- Organizer
  2012 International Conference on Solid State Devices and Materials
- Place of Presentation
  Kyoto International Conference Center (Kyoto, Japan)
- Data Source
  KAKENHI-PROJECT-24860018
[Presentation] Single-walled Carbon Nanotube/Silicon Heterojunction Photovoltaic Cell2012
- Author(s)
  K. Cui, S. Omiya, P. Zhao, T. Thurakitseree, S. Aikawa, S. Chiashi, S. Maruyama
- Organizer
  2012 MRS Fall Meeting
- Place of Presentation
  Boston, Massachusetts, USA
- Year and Date
  2012-11-29
- Data Source
  KAKENHI-PROJECT-24860018
[Presentation] 水中アーク放電を用いた金属内包カーボンナノチューブ合成における陰極金属の沸点の影響2012
- Author(s)
  竹腰健太郎，木津たきお，相川慎也，西川英一
- Organizer
  2012年秋季第73回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学（愛媛）
- Data Source
  KAKENHI-PROJECT-24860018
[Presentation] Single-walled Carbon Nanotube/Silicon Heterojunction Photovoltaic Cell2012
- Author(s)
  K. Cui, S. Omiya, P. Zhao, T. Thurakitseree, S. Aikawa, S. Chiashi, S. Maruyama
- Organizer
  2012 MRS Fall Meeting
- Place of Presentation
  Hynes Convention Center (Boston, Massachusetts, USA)
- Data Source
  KAKENHI-PROJECT-24860018
[Presentation] Influence of Polymer Coating on Device Properties of Carbon Nanotube Field-Effect Transistors2012
- Author(s)
  S. Aikawa, T. Inoue, E. Einarsson, S. Chiashi, S. Maruyama
- Organizer
  2012 International Conference on Solid State Devices and Materials
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2012-09-26
- Data Source
  KAKENHI-PROJECT-24860018
[Presentation] Fabrication of Flexible Graphene Field-Effect Transistors with Single-Walled Carbon Nanotube Electrodes2012
- Author(s)
  S.J. Kim, S. Aikawa, P. Zhao, B. Hou, E. Einarsson, S. Chiashi, S. Maruyama
- Organizer
  2012 MRS Fall Meeting
- Place of Presentation
  Hynes Convention Center (Boston, Massachusetts, USA)
- Data Source
  KAKENHI-PROJECT-24860018

1. 土方泰斗

# of Collaborated Projects: 0 results

# of Collaborated Products: 1 results

AIKAWA SHINYA 相川 慎也

相川 慎也 アイカワ シンヤ

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極性表面により室温動作を可能にする酸化膜トランジスタ型温室効果ガスセンサーの開発Principal Investigator

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Development of hydrogenated amorphous indium oxide-based transparent conductive oxide films with high mechanical flexibilityPrincipal Investigator

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Control of thin-film transistor characteristics using amorphous oxide semiconductors of simple compositionPrincipal Investigator

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Development of extremely flexible and transparent carbon nanotube devicesPrincipal Investigator

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[Book] O Plus E2013

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[Book] 超フレキシブルで透明なカーボンナノチューブトランジスタO plus E (vol.35)2013

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[Journal Article] In2O3-based thin-film transistors with a (400) polar surface for CO2 gas detection at 150?°C2024

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[Journal Article] The Influence of Oxygen‐Related Defects on the Formation of In2O3‐Based Low‐Fluorescence Transparent Conducting Film2023

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[Journal Article] p-type conversion of distorted SnO<sub>x</sub> thin film by mild thermal annealing treatment in pure N<sub>2</sub> environment2022

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[Journal Article] Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process2015

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[Journal Article] Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants2015

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[Journal Article] Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors2015

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[Journal Article] Suppression of excess oxygen for environmentally stable amorphous In-Si-O thin-film transistors2015

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[Journal Article] Stable amorphous In_2O_3-based thin-film transistors by incorporating SiO_2 to suppress oxygen vacancies2014

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[Journal Article] Self-formed copper oxide contact interlayer for high-performance oxide thin film transistors2014

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AIKAWA SHINYA 相川慎也

相川慎也アイカワシンヤ