Kobayashi Masaharu 小林正治

… Alternative Names

Masaharu Kobayashi 小林正治

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Researcher Number	40740147
Other IDs
Affiliation (Current)	2025: 東京大学, 大学院工学系研究科(工学部), 准教授 2025: 東京大学, 生産技術研究所, 准教授
Affiliation (based on the past Project Information) *help	2024: 東京大学, 生産技術研究所, 准教授 2018 – 2024: 東京大学, 大学院工学系研究科(工学部), 准教授 2016 – 2019: 東京大学, 生産技術研究所, 准教授
Review Section/Research Field	Principal Investigator Medium-sized Section 21:Electrical and electronic engineering and related fields / Basic Section 21060:Electron device and electronic equipment-related / Electron device/Electronic equipment Except Principal Investigator Medium-sized Section 21:Electrical and electronic engineering and related fields / Basic Section 29020:Thin film/surface and interfacial physical properties-related / Medium-sized Section 61:Human informatics and related fields / Basic Section 90120:Biomaterials-related / Electron device/Electronic equipment
Keywords	Principal Investigator トランジスタ / 強誘電体 / 酸化物半導体 / メモリ / HfO2 / 酸化ハフニウム / 不揮発性メモリ / 低消費電力 / 集積デバイス / 原子層堆積法 … More / メモリデバイス / 三次元集積 / 強誘電体HfO2 / 強誘電性 / IoT / 負性容量 / 負性容量トランジスタ … More Except Principal Investigator 量子コンピュータ / 極低温制御回路 / 極低温回路 / 量子情報 / シリコン / 量子ドット / プローブ顕微鏡 / 強誘電体 / ニューロモルフィック回路 / シリコン神経ネットワーク / 不揮発性メモリデバイス / 超低消費電力アナログ回路 / 神経模倣情報処理 / 神経模倣回路 / 超低電力アナログ回路 / 教師なし学習 / 低電力アナログ集積回路 / 神経模倣システム / ニューロモルフィックハードウェア / オプトロード / スパイク計測 / ナノインク / Bluetooth Low Energy / ChR2発現ラット / 局所フィールド電位(LFP) / 脳皮質電位(ECoG) / 高分子ナノ薄膜 / 神経伝達物質 / 神経電位 / 高分子ナノシート / セロトニン / ノルエピネフリン / 電解重合 / ポリイミド / ドーパミン / ポリピロール / 分子インプリント / 無線計測 / オプトジェネティクス / 神経電極 / インクジェット印刷 / 高分子薄膜 / 規模集積回路 / MOSトランジスタ / しきい値電圧自己調整 / ナノワイヤトランジスタ / MOSFET / 大規模集積回路 / 半導体物性 Less

分極反転ダイナミクスの実空間観察に基づく強誘電体薄膜の分極疲労メカニズムの解明
- Principal Investigator
  
  平永良臣
- Project Period (FY)
  2024 – 2027
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 29020:Thin film/surface and interfacial physical properties-related
- Research Institution
  Tohoku University
酸化物半導体が駆動する次世代強誘電体メモリデバイスの大規模集積化に関する研究Principal Investigator
- Principal Investigator
  
  小林正治
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  The University of Tokyo
リコンフィギュアラブル量子極低温制御回路の創製
- Principal Investigator
  
  小寺哲夫
- Project Period (FY)
  2023 – 2026
- Research Category
  
  Grant-in-Aid for Challenging Research (Pioneering)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  Tokyo Institute of Technology
Breakthrough in fundamental technology for ultralow-power neuromorphic hardware
- Principal Investigator
  
  KOHNO Takashi
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 61:Human informatics and related fields
- Research Institution
  The University of Tokyo
3D-integrated devices based on oxide semiconductor and HfO2-based ferroelectric and its applicationsPrincipal Investigator
- Principal Investigator
  
  Kobayashi Masaharu
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Review Section
  
  Medium-sized Section 21:Electrical and electronic engineering and related fields
- Research Institution
  The University of Tokyo
Development of Nanosheet-Based Wireless Probes for Multi-Simultaneous Monitoring of Action Potentials and Neurotransmitters
- Principal Investigator
  
  Fujie Toshinori
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 90120:Biomaterials-related
- Research Institution
  Tokyo Institute of Technology
Exploration on ultralow power system enabled by CMOS-compatible ferroelectric devicesPrincipal Investigator
- Principal Investigator
  
  Masaharu Kobayashi
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  The University of Tokyo
Research and development of ultralow power circuit built by steep subthreshold slope FET and embedded FeRAM based on ferroelectric HfO2 thin filmPrincipal Investigator
- Principal Investigator
  
  Kobayashi Masaharu
- Project Period (FY)
  2016 – 2017
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  The University of Tokyo
Ultra-Low Voltage Operating Silicon Nanowire Transistors with Threshold Voltage Self-Adjusting Mechanism
- Principal Investigator
  
  Hiramoto Toshiro
- Project Period (FY)
  2015 – 2016
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  The University of Tokyo

All 2024 2023 2022 2021 2020 2019 2018 2017 2016

All Journal Article Presentation Book Patent

[Book] Yano E Plus2020
- Author(s)
  小林正治
- Total Pages
  4
- Publisher
  矢野経済研究所
- Data Source
  KAKENHI-PROJECT-18H01489
[Journal Article] A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel for 3-D Integrated Devices2024
- Author(s)
  Hikake Kaito、Li Zhuo、Hao Junxiang、Pandy Chitra、Saraya Takuya、Hiramoto Toshiro、Takahashi Takanori、Uenuma Mutsunori、Uraoka Yukiharu、Kobayashi Masaharu
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 71 Issue: 4 Pages: 2373-2379
- DOI
  10.1109/ted.2024.3370534
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04549, KAKENHI-PROJECT-23K23226
[Journal Article] Dielectric breakdown behavior of ferroelectric HfO2 capacitors by constant voltage stress studied by in situ laser-based photoemission electron microscopy2024
- Author(s)
  Yuki Itoya, Hirokazu Fujiwara, Cedric Bareille, Shik Shin, Toshiyuki Taniuchi, Masaharu Kobayashi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 63 Issue: 2 Pages: 020903-020903
- DOI
  10.35848/1347-4065/ad1e84
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K13363, KAKENHI-PROJECT-21H04549
[Journal Article] Oxide-semiconductor channel ferroelectric field-effect transistors for high-density memory applications: 3D NAND operation and the potential impact of in-plane polarization2024
- Author(s)
  Hao Junxiang、Mei Xiaoran、Saraya Takuya、Hiramoto Toshiro、Kobayashi Masaharu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 63 Issue: 1 Pages: 014003-014003
- DOI
  10.35848/1347-4065/ad11b8
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-21H04549
[Journal Article] Device modeling of oxide?semiconductor channel antiferroelectric FETs using half-loop hysteresis for memory operation2023
- Author(s)
  Huang Xingyu、Itoya Yuki、Li Zhuo、Saraya Takuya、Hiramoto Toshiro、Kobayashi Masaharu
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: SC Pages: SC1024-SC1024
- DOI
  10.35848/1347-4065/acac3b
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04549
[Journal Article] Nondestructive imaging of breakdown process in ferroelectric capacitors using in situ laser-based photoemission electron microscopy2023
- Author(s)
  Hirokazu Fujiwara,Yuki Itoya, Masaharu Kobayashi, Cedric Bareille, Shik Shin, Toshiyuki Taniuchi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 123 Issue: 17 Pages: 173501-173501
- DOI
  10.1063/5.0162484
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K13363, KAKENHI-PROJECT-21H04549
[Journal Article] On the thickness dependence of the polarization switching kinetics in HfO<sub>2</sub>-based ferroelectric2022
- Author(s)
  Sawabe Yoshiki、Saraya Takuya、Hiramoto Toshiro、Su Chun-Jung、Hu Vita Pi-Ho、Kobayashi Masaharu
- Journal Title
  
  Applied Physics Letters
  
  Volume: 121 Issue: 8 Pages: 082903-082903
- DOI
  10.1063/5.0098436
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04549
[Journal Article] A 3D Vertical-Channel Ferroelectric/Anti-Ferroelectric FET With Indium Oxide2022
- Author(s)
  Li Zhuo、Wu Jixuan、Mei Xiaoran、Huang Xingyu、Saraya Takuya、Hiramoto Toshiro、Takahashi Takanori、Uenuma Mutsunori、Uraoka Yukiharu、Kobayashi Masaharu
- Journal Title
  
  IEEE Electron Device Letters
  
  Volume: 43 Issue: 8 Pages: 1227-1230
- DOI
  10.1109/led.2022.3184316
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04549
[Journal Article] Mesoscopic-scale grain formation in HfO2-based ferroelectric thin films and its impact on electrical characteristics2022
- Author(s)
  Kobayashi Masaharu、Wu Jixuan、Sawabe Yoshiki、Takuya Saraya、Hiramoto Toshiro
- Journal Title
  
  Nano Convergence
  
  Volume: 9 Issue: 1 Pages: 1-11
- DOI
  10.1186/s40580-022-00342-6
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21H04549
[Journal Article] Study on the Roles of Charge Trapping and Fixed Charge on Subthreshold Characteristics of FeFETs2021
- Author(s)
  Jin C.、Su C. J.、Lee Y. J.、Sung P. J.、Hiramoto T.、Kobayashi M.
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 68 Issue: 3 Pages: 1304-1312
- DOI
  10.1109/ted.2020.3048916
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H01489
[Journal Article] Reliability characteristics of metal/ferroelectric-HfO2/IGZO/metal capacitor for non-volatile memory application2020
- Author(s)
  Mo Fei、Saraya Takuya、Hiramoto Toshiro、Kobayashi Masaharu
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 Issue: 7 Pages: 074005-074005
- DOI
  10.35848/1882-0786/ab9a92
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H01489
[Journal Article] A simulation study on low voltage operability of hafnium oxide based ferroelectric FET memories2020
- Author(s)
  Kiyoshi Takeuchi, Masaharu Kobayashi, Toshiro Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 59 Issue: SG Pages: SGGB11-SGGB11
- DOI
  10.35848/1347-4065/ab6cb4
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H01489
[Journal Article] Low-Voltage Operating Ferroelectric FET with Ultrathin IGZO Channel for High-Density Memory Application2020
- Author(s)
  Mo Fei、Tagawa Yusaku、Jin Chengji、Ahn MinJu、Saraya Takuya、Hiramoto Toshiro、Kobayashi Masaharu
- Journal Title
  
  IEEE Journal of the Electron Devices Society
  
  Volume: 8 Pages: 717-723
- DOI
  10.1109/jeds.2020.3008789
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H01489
[Journal Article] A first-principles study on ferroelectric phase formation of Si-doped HfO2 through nucleation and phase transition in thermal process2020
- Author(s)
  Wu Jixuan、Mo Fei、Saraya Takuya、Hiramoto Toshiro、Kobayashi Masaharu
- Journal Title
  
  Applied Physics Letters
  
  Volume: 117 Issue: 25 Pages: 252904-252904
- DOI
  10.1063/5.0035139
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H01489
[Journal Article] A Monolithic 3-D Integration of RRAM Array and Oxide Semiconductor FET for In-Memory Computing in 3-D Neural Network2020
- Author(s)
  Wu Jixuan、Mo Fei、Saraya Takuya、Hiramoto Toshiro、Kobayashi Masaharu
- Journal Title
  
  IEEE Transactions on Electron Devices
  
  Volume: 67 Issue: 12 Pages: 5322-5328
- DOI
  10.1109/ted.2020.3033831
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H01489
[Journal Article] Physical Mechanisms of Reverse DIBL and NDR in FeFETs With Steep Subthreshold Swing2020
- Author(s)
  Jin Chengji、Saraya Takuya、Hiramoto Toshiro、Kobayashi Masaharu
- Journal Title
  
  IEEE Journal of the Electron Devices Society
  
  Volume: 8 Pages: 429-434
- DOI
  10.1109/jeds.2020.2986345
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-18H01489
[Journal Article] A Feasibility Study on Ferroelectric Shadow SRAMs Based on Variability-Aware Design Optimization2019
- Author(s)
  Kiyoshi Takeuchi, Masaharu Kobayashi, Toshiro Hiramoto
- Journal Title
  
  IEEE Journal of the Electron Devices Society
  
  Volume: 7 Pages: 1284-1292
- DOI
  10.1109/jeds.2019.2949564
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-18H01489
[Journal Article] Experimental Demonstration of a Nonvolatile SRAM with Ferroelectric HfO2 Capacitor for Normally Off Application2018
- Author(s)
  Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang, and Toshiro Hiramoto
- Journal Title
  
  Journal of the Electron Devices Society
  
  Volume: 6 Pages: 280-285
- DOI
  10.1109/jeds.2018.2800090
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16K18085
[Journal Article] Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO2 Capacitor2018
- Author(s)
  Kyungmin Jang, Nozomu Ueyama, Masaharu Kobayashi, and Toshiro Hiramoto
- Journal Title
  
  Journal of the Electron Devices Society
  
  Volume: 6 Pages: 346-353
- DOI
  10.1109/jeds.2018.2806920
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16K18085
[Journal Article] On gate stack scalability of double-gate negative-capacitance FET with ferroelectric HfO2 for energy efficient sub-0.2V operation2017
- Author(s)
  Kyungmin Jang, Takuya Sayara, Masaharu Kobayashi, and Toshiro Hiramoto
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 136 Issue: 2 Pages: 60-67
- DOI
  10.7567/jjap.57.024201
- NAID
  210000148597
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K18085
[Journal Article] Negative Capacitance for Boosting Tunnel FET Performance”, IEEE Transactions on Nanotechnology2017
- Author(s)
  Masaharu Kobayashi, Kyungmin Jang, Nozomu Ueyama, and Toshiro Hiramoto
- Journal Title
  
  IEEE Transactions on Nanotechnology
  
  Volume: 16 Issue: 2 Pages: 253-258
- DOI
  10.1109/tnano.2017.2658688
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16K18085
[Journal Article] I on /I off ratio enhancement and scalability of gate-all-around nanowire negative-capacitance FET with ferroelectric HfO22017
- Author(s)
  Jang Kyungmin, Saraya Takuya, Kobayashi Masaharu, Hiramoto Toshiro
- Journal Title
  
  Solid State Electronics
  
  Volume: 136 Pages: 60-67
- DOI
  10.1016/j.sse.2017.06.011
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16K18085
[Patent] 不揮発性記憶素子2019
- Inventor(s)
  小林正治，莫非，平本俊郎
- Industrial Property Rights Holder
  小林正治，莫非，平本俊郎
- Industrial Property Rights Type
  特許
- Filing Date
  2019
- Data Source
  KAKENHI-PROJECT-18H01489
[Patent] 不揮発性記憶素子2019
- Inventor(s)
  小林正治，莫非，平本俊郎
- Industrial Property Rights Holder
  小林正治，莫非，平本俊郎
- Industrial Property Rights Type
  特許
- Filing Date
  2019
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] 上部電極越しに観察したHfO2 系強誘電体の分極コントラスト:レーザー励起光電子顕微鏡2024
- Author(s)
  藤原弘和，糸矢祐喜，小林正治，C´edric Bareille，辛埴，谷内敏之
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04549
[Presentation] 高集積 3 次元積層シリコン量子ビットにおける量子ドットの個別制御2024
- Author(s)
  二木大輝、金駿午、水谷朋子、更屋拓哉、小林正治、平本俊郎
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K17327
[Presentation] 3 次元集積デバイス応用に向けた原子層堆積法によるInGaOx チャネルナノシートトランジスタ2024
- Author(s)
  日掛凱斗，李卓，郝 俊翔，パンディチトラ，更屋拓哉，平本俊郎，髙橋崇典，上沼睦典，浦岡行治，小林正治
- Organizer
  応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-21H04549
[Presentation] HfO2系強誘電体キャパシタの下部電極オゾン酸化による絶縁破壊寿命の向上2024
- Author(s)
  糸矢祐喜，更屋拓哉，平本俊郎，小林正治
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04549
[Presentation] 原子層堆積法によるナノシート酸化物半導体トランジスタ2024
- Author(s)
  小林正治
- Organizer
  DIT29（電子デバイス界面テクノロジー研究会）
- Invited
- Data Source
  KAKENHI-PROJECT-21H04549
[Presentation] Oxide Semiconductor Transistors for LSI Application2024
- Author(s)
  Masaharu Kobayashi
- Organizer
  IEEE SISC
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04549
[Presentation] 三次元積層型シリコン量子ドットの特性の個別制御2023
- Author(s)
  金駿午、水谷朋子、更屋拓哉、岡博史、森貴洋、小林正治、平本俊郎
- Organizer
  応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K17327
[Presentation] 3D Integrated Device Applications of ALD-Grown Ferroelectric and Oxide-Semiconductor Materials2023
- Author(s)
  Masaharu Kobayashi
- Organizer
  ALD 2023
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04549
[Presentation] HfO2系強誘電体膜の絶縁破壊箇所の電子状態：レーザー励起光電子顕微鏡2023
- Author(s)
  藤原弘和，糸矢祐喜，小林正治，Bareille Cedric，辛埴，谷内敏之
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04549
[Presentation] A Simulation Study on Memory Characteristics of Oxide-Semiconductor Channel Antiferroelectric FETs Using Half-Loop Hysteresis2023
- Author(s)
  Xingyu Huang, Yuki Itoya, Zhuo Li, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi
- Organizer
  2023年第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04549
[Presentation] ３次元集積デバイス応用に向けた原子層堆積法によるInGaOxチャネルナノシートトランジスタ2023
- Author(s)
  日掛凱斗，李卓，郝 俊翔，パンディチトラ，更屋拓哉，平本俊郎，髙橋崇典，上沼睦典，浦岡行治，小林正治
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04549
[Presentation] A Nanosheet Oxide Semiconductor Transistor Using Atomic layer Deposition for 3D Integrated Devices2023
- Author(s)
  Masaharu Kobayashi
- Organizer
  2023 ICICDT
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04549
[Presentation] 3D NAND Memory Operation of Oxide-Semiconductor Channel FeFETs2023
- Author(s)
  Junxiang Hao, Xiaoran Mei, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi
- Organizer
  2023年第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04549
[Presentation] オペランドレーザー励起光電子顕微鏡による強誘電体キャパシタの非破壊イメージングの開拓2023
- Author(s)
  藤原弘和，糸矢祐喜，小林正治，Cedric Bareille，辛埴，谷内敏之
- Organizer
  SDM研究会
- Invited
- Data Source
  KAKENHI-PROJECT-21H04549
[Presentation] レーザー励起光電子顕微鏡を用いたHfO2系強誘電体キャパシタの絶縁破壊に関する評価2023
- Author(s)
  糸矢祐喜，藤原弘和，Bareille Cedric，辛埴，谷内敏之，小林正治
- Organizer
  2023年第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04549
[Presentation] レーザー励起光電子顕微鏡を用いたHfO2系強誘電体の強誘電ドメイン及びその温度変化の観察2023
- Author(s)
  糸矢祐喜，藤原弘和，Bareille Cedric，辛埴，谷内敏之，小林正治
- Organizer
  応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04549
[Presentation] 強誘電体トンネル接合の電荷トラップ影響シミュレーション2023
- Author(s)
  金在顕，更屋拓哉，平本俊郎，小林正治
- Organizer
  2023年第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04549
[Presentation] 原子層堆積法によるInGaOチャネルとInSnO電極によるナノシート酸化物半導体トランジスタ2023
- Author(s)
  小林正治，日掛凱斗，李卓，ハオジュンシャン，パンディチトラ，更屋拓哉，平本俊郎，高橋崇典，上沼睦典，浦岡行治
- Organizer
  SDM研究会
- Invited
- Data Source
  KAKENHI-PROJECT-21H04549
[Presentation] Individual Control of Characteristics of Vertically Stacked Silicon Quantum Dots2023
- Author(s)
  J. Kim, T. Mizutani, T. Saraya, H. Oka, T. Mori, M. Kobayashi and T. Hiramoto
- Organizer
  Silicon Nanoelectronics Workshop
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K17327
[Presentation] 3D NAND Memory Operation of Oxide-Semiconductor Channel FeFETs and the Potential Impact of In-Plane Polarization2023
- Author(s)
  Junxiang Hao, Xiaoran Mei, Takuya Saraya, Toshiro Hiramoto and Masaharu Kobayashi
- Organizer
  IEEE Electron Devices Technology and Manufacturing (EDTM) 2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04549
[Presentation] A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode with Normally-off Operation, High Mobility and Reliability for 3D Integrated Devices2023
- Author(s)
  Kaito Hikake, Zhuo Li, Junxiang Hao, Chitra Pandy, Takuya Saraya, Toshiro Hiramoto, Takanori Takahashi, Mutsunori Uenuma, Yukiharu Uraoka, and Masaharu Kobayashi
- Organizer
  VLSI Symposium 2023
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04549
[Presentation] Modeling and Simulation of Antiferroelectric FETs with Oxide Semiconductor Channel Using Half-Loop Hysteresis for Memory Applications2022
- Author(s)
  Xingyu Huang, Yuki Itoya, Zhuo Li, Takuya Saraya, Toshiro Hiramoto, and Masaharu Kobayashi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04549
[Presentation] 次世代強誘電体と酸化物半導体で切り拓くメモリデバイス技術」2022
- Author(s)
  小林正治
- Organizer
  応用電子物性分科会研究例会
- Invited
- Data Source
  KAKENHI-PROJECT-21H04549
[Presentation] A Vertical Channel Ferroelectric/Anti-Ferroelectric FET with ALD InOx2022
- Author(s)
  Zhuo Li, Jixuan Wu, Xiaoran Mei, Xingyu Huang, Takuya Saraya, Toshiro Hiramoto, Takanori Takahashi, Mutsunori Uenuma, Yukiharu Uraoka, Masaharu Kobayashi
- Organizer
  2022年第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04549
[Presentation] A Vertical Channel Ferroelectric/Anti-Ferroelectric FET with ALD InOx and Field-Induced Polar-Axis Alignment for 3D High-Density Memory2022
- Author(s)
  Zhuo Li, Jixuan Wu, Xiaoran Mei, Xingyu Huang, Takuya Saraya, Toshiro Hiramoto, Takanori Takahashi, Mutsunori Uenuma, Yukiharu Uraoka, and Masaharu Kobayashi
- Organizer
  2022 IEEE Silicon Nanoelectronics Workshop
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-21H04549
[Presentation] Field-Induced Polar-Axis Alignment for 3D High-Density Memory2022
- Author(s)
  李卓，Jixuan Wu，Mei Xiaoran，Xingyu Huant，更屋拓哉，平本敏郎，髙橋崇典，上沼睦典，浦岡行治，小林正治
- Organizer
  2022年第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04549
[Presentation] Field-Induced Polar-Axis Alignment for 3D High-Density Memory2022
- Author(s)
  李卓，Jixuan Wu，Mei Xiaoran，黄星宇，更屋拓哉，平本敏郎，髙橋崇典，上沼睦典，浦岡行治，小林正治
- Organizer
  2022年第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-21H04549
[Presentation] HfO2系強誘電体と酸化物半導体を用いた新規メモリデバイス～酸化物半導体はスパッタからALDへ2022
- Author(s)
  小林正治
- Organizer
  NEDIA第9回電子デバイスフォーラム
- Invited
- Data Source
  KAKENHI-PROJECT-21H04549
[Presentation] 酸化物半導体を用いた三次元集積メモリデバイスの研究動向2022
- Author(s)
  小林正治
- Organizer
  薄膜材料デバイス研究会第19回研究集会
- Invited
- Data Source
  KAKENHI-PROJECT-21H04549
[Presentation] 強誘電体トンネル接合メモリの大規模集積化に向けた設計に関する検討2020
- Author(s)
  吉村英将, 莫非, 平本俊郎, 小林正治
- Organizer
  第67回応用物理学会春季学術講演会，上智大学（COVID-19のため開催中止），2020年3月14日
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] Reliability characteristics of Ferroelectric-HfO2 capacitor with IGZO capping for 3D structure non-volatile memory application2020
- Author(s)
  Fei Mo, Saraya Takuya, Toshiro Hiramoto, Masaharu Kobayashi
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] A Simulation Study on the System Performance of Neural Networks using Embedded Nonvolatile Memory2020
- Author(s)
  Paul Johansen, Masaharu Kobayash
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] On the Physical Mechanism of Negative Capacitance Effect in Ferroelectric FET2020
- Author(s)
  Masaharu Kobayashi
- Organizer
  SISPAD 2020
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] IGZO Channel Ferroelectric Memory FET2020
- Author(s)
  Masaharu Kobayashi
- Organizer
  ACTIVE-MATRIXFLATPANEL DISPLAYS AND DEVICES (AM-FPD) 2020
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] Emerging Ferroelectric-HfO2 Based Device Technologies for Energy-Efficient Computing2020
- Author(s)
  Masaharu Kobayashi
- Organizer
  2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] 大容量低消費電力メモリ応用に向けたMoS2チャネルを有するHfO2系強誘電体トランジスタの実験実証2020
- Author(s)
  項嘉文, 張文馨, 更屋拓哉, 入沢寿史, 平本俊郎, 小林正治
- Organizer
  第68回応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] Emerging Ferroelectric Devices for Energy-Efficient Computing2020
- Author(s)
  Masaharu Kobayashi,
- Organizer
  Semicon Korea
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] Reliability characteristics of Ferroelectric-HfO2 capacitor with IGZO capping for non-volatile memory application2020
- Author(s)
  莫非, 更屋拓哉, 平本俊郎, 小林正治
- Organizer
  第68回応用物理学会学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] 3D Integration of RRAM Array with Oxide Semiconductor FET for In-Memory Computing2020
- Author(s)
  Jixuan Wu, Fei Mo, Saraya Takuya, Toshiro Hiramoto, Masaharu Kobayashi,
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] Comparative Study on Memory Characteristics of Ferroelectric-HfO2 Transistors with Different Structure of Oxide-Semiconductor Channel2020
- Author(s)
  FEI MO, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi
- Organizer
  第68回応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] Ferroelectric-HfO2 Devices: Physics and Applications2020
- Author(s)
  Masaharu Kobayashi
- Organizer
  ECS PRiME 2020
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] A Monolithic 3D Integration of RRAM Array with Oxide Semiconductor FET for In-memory Computing in Quantized Neural Network AI Applications2020
- Author(s)
  Jixuan Wu, Fei Mo, Takuya Saraya, Toshiro Hiramoto and Masaharu Kobayashi
- Organizer
  VLSI Symposium on Technology
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] 3D Neural Network: Monolithic Integration of Resistive-RAM Array with Oxide-Semiconductor FET2020
- Author(s)
  Masaharu Kobayashi, Jixuan Wu, Fei Mo, Takuya Saraya, Toshiro Hiramoto
- Organizer
  ECS PRiME 2020
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] A First-Principles Study on Ferroelectric Phase Formation of Si-Doped HfO22020
- Author(s)
  Jixuan Wu, Fei Mo, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi
- Organizer
  第68回応用物理学会学術講演会
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] 三次元ニューラルネットの実現に向けた抵抗変化型メモリと酸化物半導体トランジスタのモノリシック集積2020
- Author(s)
  小林正治
- Organizer
  NEDIA 第7回電子デバイスフォーラム京都
- Invited
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] Ferroelectric-HfO2 based transistor and memory technologies enabling ultralow power IoT applications2019
- Author(s)
  Masaharu Kobayashi
- Organizer
  2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2019), Busan, Korea
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] Comprehensive Understanding of Negative Capacitance FET From the Perspective of Transient Ferroelectric Model2019
- Author(s)
  Masaharu Kobayashi
- Organizer
  2019 IEEE 13th Internationla Conference on ASIC (ASICON), Oct. 30, 2019, Chongqing, China
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] 強誘電体トンネル接合メモリの大規模集積化に向けた設計に関する検討2019
- Author(s)
  吉村英将, 莫非, 平本俊郎, 小林正治
- Organizer
  第67回応用物理学会春季学術講演会，上智大学（COVID-19のため開催中止），2020年3月14日
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] Mechanisms of Reverse-DIBL and NDR Observed in Ferroelectric FETs2019
- Author(s)
  Chengji Jin, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi
- Organizer
  第80回応用物理学会秋季学術講演会，北海道大学（北海道），18p-B11-1
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] Challenges and opportunities of ferroelectric-HfO2 based transistor and memory technologies2019
- Author(s)
  Masaharu Kobayashi
- Organizer
  Symposium on Nano Device Technology, TSRI, hsinchu, Taiwan, Apr. 4, 2019
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] Demonstration of HfO2 based Ferroelectric FET with Ultrathin-body IGZO for High-Density Memory Application2019
- Author(s)
  FEI MO, Yusaku Tagawa, Chengji Jin, MinJu Ahn, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi
- Organizer
  第80回応用物理学会秋季学術講演会，北海道大学（北海道）， 18p-B11-2
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] Transient Negative Capacitance as Cause of Reverse Drain-induced Barrier Lowering and Negative Differential Resistance in Ferroelectric FETs2019
- Author(s)
  Chengji Jin, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi
- Organizer
  VLSI technology symposium 2019, June 13th, 2019, Kyoto
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] Experimental Demonstration of Ferroelectric HfO2 FET with Ultrathin-body IGZO for High-Density and Low-Power Memory Application2019
- Author(s)
  Fei Mo, Yusaku Tagawa, Chengji Jin, MinJu Ahn, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi
- Organizer
  VLSI technology symposium 2019, June 11th, 2019, Kyoto
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] 負性容量トランジスタの理解と今後の展望2019
- Author(s)
  小林正治
- Organizer
  第80回応用物理学会秋季学術講演会，北海道大学（北海道），2019年9月20日
- Invited
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] 極薄IGZOチャネルを有する強誘電体トランジスタメモリの検討2019
- Author(s)
  小林正治, 莫非, 多川友作, 金成吉, 安珉柱, 更屋拓哉, 平本俊郎
- Organizer
  シリコン材料・デバイス(SDM)研究会，北海道大学，2019年8月9日
- Invited
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] Emerging ferroelectric memory devices by material innovation2019
- Author(s)
  Masaharu Kobayashi
- Organizer
  ISCSI-8, Tohoku University, Nov. 28th, 2019, pp. 63-64.
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] 強誘電体HfO2トンネル接合メモリのスケーラビリティに関する検討2019
- Author(s)
  小林正治, 莫非, 多川友作, 更屋拓哉, 平本俊郎
- Organizer
  シリコン材料・デバイス研究会（SDM研究会），機械振興会館，2019年11月7日
- Invited
- Data Source
  KAKENHI-PROJECT-18H01489
[Presentation] 超低消費電力エレクトロニクスに向けた強誘電体HfO2系薄膜材料によるデバイス技術のブレークスルー2018
- Author(s)
  小林正治
- Organizer
  電子デバイス界面テクノロジー研究会
- Invited
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] Negative Capacitance Transistor for Steep Subthreshold Slope2018
- Author(s)
  Masaharu Kobayashi
- Organizer
  Electron Devices Technology and Manufacturing (EDTM) Conference 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] 負性容量トランジスタに向けた強誘電性HfZrO2膜における負性容量の直接観測2017
- Author(s)
  上山望，小林正治，平本俊郎
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜, 神奈川
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] CMOSプロセスと整合性の高い強誘電ナノ薄膜材料による不揮発性メモリの新展開2017
- Author(s)
  小林正治
- Organizer
  NEDIA 第4回電子デバイスフォーラム京都(2017)
- Invited
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] ノーマリーオフ動作のための強誘電体HfO2を集積した不揮発性SRAM2017
- Author(s)
  小林正治，上山望，平本俊郎
- Organizer
  シリコン材料・デバイス研究会（SDM）
- Invited
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] Technology break-through by ferroelectric HfO2 for ultralow power electronics2017
- Author(s)
  Masaharu Kobayashi
- Organizer
  International Nanotechnology Conference on Communication and Cooperation Workshop (INC workshop)
- Invited
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] A nonvolatile SRAM integrated with ferroelectric HfO2 capacitor for normally-off and ultralow power IoT application2017
- Author(s)
  Masaharu Kobayashi, Nozomu Ueyama, and Toshiro Hiramoto
- Organizer
  VLSI symposium 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] 低消費電力応用に向けた強誘電体HfO2薄膜不揮発性SRAMの動作実証2017
- Author(s)
  小林正治，上山望，平本俊郎
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] Investigations on dynamic characteristics of ferroelectric HfO2 based on multi-domain interaction model2017
- Author(s)
  Kyungmin Jang, Nozomu Ueyama, Masaharu Kobayashi, and Toshiro Hiramoto
- Organizer
  Silicon Nano Workshop (SNW) 2017
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] 強誘電体HfO2を用いたGate-All-Aroundナノワイヤ負性容量FETにおけるIon/Ioff比の向上とそのスケーラビリティ2017
- Author(s)
  Jang Kyungmin，更屋拓哉，小林正治，平本俊郎
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜, 神奈川
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] Present status and future prospects of Si-based CMOS devices2017
- Author(s)
  小林正治
- Organizer
  第１回 CSRN-Tokyo Workshop 2017
- Invited
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] 強誘電性マルチドメイン相互作用モデルを用いた強誘電体HfO2の動特性に関する考察2017
- Author(s)
  Jang Kyungmin, 上山望，小林正治，平本俊郎
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] 強誘電体HfO2ダブルゲート負性容量FETの動特性に関する考察2017
- Author(s)
  Jang Kyungmin、上山望、小林正治、平本俊郎
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜, 神奈川
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] A nonvolatile SRAM integrated with ferroelectric HfO2 capacitor for normally-off and ultralow power IoT application2017
- Author(s)
  Masaharu Kobayashi
- Organizer
  The Fifth Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] Ultra-Low Power and Ultra-Low Voltage Devices and Circuits for IoT Applications2016
- Author(s)
  Toshiro Hiramoto, Kiyoshi Takeuchi, and Masaharu Kobayashi
- Organizer
  IEEE Silicon Nanoelectronics Workshop
- Place of Presentation
  Hilton Hawaiian Village, Honolulu, HI, USA
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] On Gate Stack Scalability of Double-Gate Negative-Capacitance FET with Ferroelectric HfO2 for Energy-Efficient Sub-0.2V Operation2016
- Author(s)
  Kyungmin Jang, Takuya Saraya, Masaharu Kobayashi, and Toshiro Hiramoto
- Organizer
  IEEE Silicon Nanoelectronics Workshop
- Place of Presentation
  Hilton Hawaiian Village, Honolulu, HI, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] Ion/Ioff Ratio Enhancement of Gate-All-Around Nanowire Negative-Capacitance FET with Ferroelectric HfO22016
- Author(s)
  Kyungmin Jang, Takuya Saraya, Masaharu Kobayashi, and Toshiro Hiramoto
- Organizer
  International Semiconductor Device Research Symposium (ISDRS)
- Place of Presentation
  Hyatt Regency Bethesda, Bethesda, MD, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] Experimental Study on Polarization-Limited Operation Speed of Negative Capacitance FET with Ferroelectric HfO22016
- Author(s)
  Masaharu Kobayashi, Nozomu Ueyama, Kyungmin Jang, and Toshiro Hiramoto
- Organizer
  IEEE International Electron Devices Meeting (IEDM)
- Place of Presentation
  Hilton San Francisco Union Square, San Francisco, CA, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] Negative Capacitance as a Performance Booster for Tunnel FET2016
- Author(s)
  Masaharu Kobayashi, Kyungmin Jang, Nozomu Ueyama, and Toshiro Hiramoto
- Organizer
  IEEE Silicon Nanoelectronics Workshop
- Place of Presentation
  Hilton Hawaiian Village, Honolulu, HI, USA
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] 負性容量によるトンネルFETの性能向上負性容量によるトンネルFETの性能向上2016
- Author(s)
  小林正治，チャンキュンミン，上山　望，平本俊郎
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ, 新潟
- Data Source
  KAKENHI-PROJECT-16K18085
[Presentation] サブ0.2Vの高エネルギー効率動作に向けた強誘電体HfO2ダブルゲート負性容量FETにおけるゲートスタックのスケーラビリティ2016
- Author(s)
  Jang Kyungmin，更屋拓哉，小林正治，平本俊郎
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ, 新潟
- Data Source
  KAKENHI-PROJECT-16K18085

1. HIRAMOTO Toshiro (20192718)

# of Collaborated Projects: 2 results

# of Collaborated Products: 20 results
2. Takuya Saraya (90334367)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
3. Fujie Toshinori (70538735)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
4. KOHNO Takashi (90447350)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
5. 太田宏之 (20535190)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
6. 武岡真司 (20222094)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
7. 平永良臣 (70436161)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 小寺哲夫 (00466856)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 三木拓司 (60754629)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 米田淳 (60734366)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. 溝口来成 (90848772)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. 藤原弘和

# of Collaborated Projects: 0 results

# of Collaborated Products: 2 results

Kobayashi Masaharu 小林 正治

Masaharu Kobayashi 小林 正治

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分極反転ダイナミクスの実空間観察に基づく強誘電体薄膜の分極疲労メカニズムの解明

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酸化物半導体が駆動する次世代強誘電体メモリデバイスの大規模集積化に関する研究Principal Investigator

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リコンフィギュアラブル量子極低温制御回路の創製

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Breakthrough in fundamental technology for ultralow-power neuromorphic hardware

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3D-integrated devices based on oxide semiconductor and HfO2-based ferroelectric and its applicationsPrincipal Investigator

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Development of Nanosheet-Based Wireless Probes for Multi-Simultaneous Monitoring of Action Potentials and Neurotransmitters

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Exploration on ultralow power system enabled by CMOS-compatible ferroelectric devicesPrincipal Investigator

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Research and development of ultralow power circuit built by steep subthreshold slope FET and embedded FeRAM based on ferroelectric HfO2 thin filmPrincipal Investigator

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Ultra-Low Voltage Operating Silicon Nanowire Transistors with Threshold Voltage Self-Adjusting Mechanism

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[Book] Yano E Plus2020

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[Journal Article] A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel for 3-D Integrated Devices2024

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[Journal Article] Dielectric breakdown behavior of ferroelectric HfO2 capacitors by constant voltage stress studied by in situ laser-based photoemission electron microscopy2024

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[Journal Article] Oxide-semiconductor channel ferroelectric field-effect transistors for high-density memory applications: 3D NAND operation and the potential impact of in-plane polarization2024

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[Journal Article] Device modeling of oxide?semiconductor channel antiferroelectric FETs using half-loop hysteresis for memory operation2023

Kobayashi Masaharu 小林正治

Masaharu Kobayashi 小林正治