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Nagamatsu Kentaro  永松 謙太郎

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NAGAMATSU Kentaro  永松 謙太郎

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Researcher Number 40774378
Other IDs
Affiliation (Current) 2025: 徳島大学, ポストLEDフォトニクス研究所, 准教授
Affiliation (based on the past Project Information) *help 2020 – 2024: 徳島大学, ポストLEDフォトニクス研究所, 准教授
Review Section/Research Field
Principal Investigator
Basic Section 30010:Crystal engineering-related / Medium-sized Section 21:Electrical and electronic engineering and related fields
Keywords
Principal Investigator
深紫外LED / 高温結晶成長 / 窒化物半導体 / 窒化アルミニウム
  • Research Projects

    (2 results)
  • Research Products

    (40 results)
  •  Study on deep ultraviolet LEDs with the wavelength of 220nm by Jet gas stream MOVPEPrincipal Investigator

    • Principal Investigator
      永松 謙太郎
    • Project Period (FY)
      2022 – 2024
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 30010:Crystal engineering-related
    • Research Institution
      The University of Tokushima
  •  Low dislocation AlN growth by super high temperature MOVPE in jet engine modelPrincipal Investigator

    • Principal Investigator
      NAGAMATSU Kentaro
    • Project Period (FY)
      2020 – 2022
    • Research Category
      Grant-in-Aid for Challenging Research (Exploratory)
    • Review Section
      Medium-sized Section 21:Electrical and electronic engineering and related fields
    • Research Institution
      The University of Tokushima

All 2024 2023 2022 2021

All Journal Article Presentation

  • [Journal Article] Investigation of V/III ratio dependencies for optimizing AlN growth during reduced parasitic reaction in metalorganic vapor phase epitaxy2023

    • Author(s)
      Tomita Atsushi、Miyagawa Takumi、Hirayama Hideki、Takashima Yuusuke、Naoi Yoshiki、Nagamatsu Kentaro
    • Journal Title

      Scientific Reports

      Volume: 13 Issue: 1 Pages: 33081-7

    • DOI

      10.1038/s41598-023-30489-z

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-20K21006, KAKENHI-PROJECT-23K23241
  • [Journal Article] High growth temperature for AlN by jet stream gas flow metalorganic vapor phase epitaxy2023

    • Author(s)
      Nagamatsu Kentaro、Miyagawa Takumi、Tomita Atsushi、Hirayama Hideki、Takashima Yuusuke、Naoi Yoshiki
    • Journal Title

      Scientific Reports

      Volume: 13 Issue: 1 Pages: 24381-7

    • DOI

      10.1038/s41598-023-29150-6

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-20K21006, KAKENHI-PROJECT-23K23241
  • [Journal Article] Reduction of parasitic reaction in high-temperature AlN growth by jet stream gas flow metalorganic vapor phase epitaxy2022

    • Author(s)
      Nagamatsu Kentaro、Tsuda Shota、Miyagawa Takumi、Aono Reiya、Hirayama Hideki、Takashima Yuusuke、Naoi Yoshiki
    • Journal Title

      Scientific Reports

      Volume: 12 Issue: 1 Pages: 76621-7

    • DOI

      10.1038/s41598-022-10937-y

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PROJECT-20K21006
  • [Presentation] TMAパルス供給によるAlNの高温成長2024

    • Author(s)
      髙柳 祐介, 富田 敦之, 藤井 滉樹, 松原 優翔, 髙島 祐介, 直井 美貴, 永松 謙太郎
    • Organizer
      第71回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K23241
  • [Presentation] 高温AlGaN成長における供給Al/Gaモル比とAlNモル分率の関係2024

    • Author(s)
      松原 優翔, 富田 敦之, 藤井 滉樹, 髙柳 祐介, 髙島 祐介, 直井 美貴, 永松 謙太郎
    • Organizer
      第71回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K23241
  • [Presentation] 高オフ角サファイア基板上AlNのステップバンチング低減技術2023

    • Author(s)
      松原 優翔, 富田 敦之, 藤井 滉樹, 髙島 祐介, 直井 美貴, 永松 謙太郎
    • Organizer
      2023年度 応用物理・物理系学会 中国四国支部 合同学術講演会
    • Data Source
      KAKENHI-PROJECT-23K23241
  • [Presentation] Investigation of Ga Localization in AlGaN Growth with Step-Bunching at ultra-high temperature MOVPE growth2023

    • Author(s)
      Kouki Fujii, Atsushi Tomita, Yuuto Matsubara, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu
    • Organizer
      The 14th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K23241
  • [Presentation] High-temperature growth in AlN by MOVPE2023

    • Author(s)
      Kentaro Nagamatsu
    • Organizer
      ISPlasma2023
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K21006
  • [Presentation] aN localization in high-temperature AlGaN growth over 15002023

    • Author(s)
      Atsushi Tomita, Kouki Fujii, Takuya Kawakami, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu
    • Organizer
      The 14th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K23241
  • [Presentation] AlGaN and AlGaN/AlN superlattice growth by using ultra high-temperature MOVPE2023

    • Author(s)
      Atsushi Tomita, Kouki Fujii, Takuya Kawakami, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu
    • Organizer
      The 14th International Conference on Nitride Semiconductors
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K23241
  • [Presentation] 窒化処理した高温成長AlNにおける極性反転2023

    • Author(s)
      髙柳 祐介, 富田 敦之, 藤井 滉樹, 髙島 祐介, 直井 美貴, 永松 謙太郎
    • Organizer
      2023年度 応用物理・物理系学会 中国四国支部 合同学術講演会
    • Data Source
      KAKENHI-PROJECT-23K23241
  • [Presentation] 超高温MOVPEを用いたAlGaN成長2023

    • Author(s)
      富田 敦之, 宮川 拓己, 平山 秀樹, 高島 祐介, 直井 美貴, 永松 謙太郎
    • Organizer
      第70回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-23K23241
  • [Presentation] 超高温MOVPEを用いたAlGaN成長2023

    • Author(s)
      富田 敦之, 宮川 拓己, 平山 秀樹, 髙島 祐介, 直井 美貴, 永松 謙太郎
    • Organizer
      第70回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K21006
  • [Presentation] High-temperature growth in AlN by MOVPE2023

    • Author(s)
      Kentaro Nagamatsu
    • Organizer
      ISPlasma2023
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K23241
  • [Presentation] 高温有機金属気相成長法におけるAlNの特異的なステップバンチング2022

    • Author(s)
      宮川 拓己, 津田 翔太, 富田 敦之, 平山 秀樹, 髙島 祐介, 直井 美貴, 永松 謙太郎
    • Organizer
      第69回応用物理学会春季学術講演会, 25a-E203-2 (Web会議)
    • Data Source
      KAKENHI-PROJECT-20K21006
  • [Presentation] 低オフ角サファイア基板を用いた高温AlN成長におけるV/III比依存性2022

    • Author(s)
      富田 敦之, 津田 翔太, 宮川 拓己, 平山 秀樹, 髙島 祐介, 直井 美貴, 永松 謙太郎
    • Organizer
      第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K21006
  • [Presentation] 有機金属気相成長法による高温AlN成長2022

    • Author(s)
      永松 謙太郎
    • Organizer
      第14回ナノ構造エピタキシャル成長講演会
    • Invited
    • Data Source
      KAKENHI-PROJECT-23K23241
  • [Presentation] The high-temperature growth in AlN with the unaffected parasitic reaction by Jet gas stream MOVPE2022

    • Author(s)
      Kentaro Nagamatsu, Takumi Miyagawa, Atsushi Tomita, Hideki Hirayama, Yuusuke Takashima and Yoshiki Naoi
    • Organizer
      International Workshop on Nitride semiconductor 2022, Berlin
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K21006
  • [Presentation] 有機金属気相成長法による高温AlN成長2022

    • Author(s)
      永松 謙太郎
    • Organizer
      第14回ナノ構造エピタキシャル成長講演会, Fr-I04,
    • Invited
    • Data Source
      KAKENHI-PROJECT-20K21006
  • [Presentation] The improvement of crystal orientation in AlN with controlled inversion domain2022

    • Author(s)
      Shota Tsuda, Takumi Miyagawa, Reiya Aono, Atsushi Tomita, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu
    • Organizer
      Photonics West 2022, 12001-67, San Francisco (Web会議)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K21006
  • [Presentation] 低オフ角サファイヤ基板を用いた高温AIN成長におけるV/Ⅲ比依存性2022

    • Author(s)
      富田 敦之, 津田 翔太, 宮川 拓己, 平山 秀樹, 髙島 祐介, 直井 美貴, 永松 謙太郎
    • Organizer
      第69回応用物理学会春季学術講演会, 25a-E203-3 (Web会議)
    • Data Source
      KAKENHI-PROJECT-20K21006
  • [Presentation] The high-temperature growth in AlN with the unaffected parasitic reaction by Jet gas stream MOVPE2022

    • Author(s)
      Kentaro Nagamatsu, Takumi Miyagawa, Atsushi Tomita, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi
    • Organizer
      International Workshop on Nitride semiconductor 2022, Berlin
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K23241
  • [Presentation] Virus inactivation using ultraviolet LEDs2022

    • Author(s)
      Kentaro Nagamatsu
    • Organizer
      CLEO-PR 2022, Sapporo
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K21006
  • [Presentation] Lateral epitaxial overgrowth by mass transport in AlN with the temperature of 1700℃2022

    • Author(s)
      Takumi Miyagawa, Atsushi Tomita, Shota Tsuda, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi, Kentaro Nagamatsu
    • Organizer
      International Workshop on Nitride semiconductor 2022, Berlin
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K23241
  • [Presentation] Threshold temperature in annihilation radius of dislocation for AlN2022

    • Author(s)
      Shota Tsuda, Takumi Miyagawa, Reiya Aono, Atsushi Tomita, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu
    • Organizer
      Photonics West 2022, 12001-66, San Francisco (Web会議)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K21006
  • [Presentation] The dependence of the V/III ratio in high-temperature AlN growth with several misorientations off-angle sapphire substrate2022

    • Author(s)
      Atsushi Tomita, Shota Tsuda, Takumi Miyagawa, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi, Kentaro Nagamatsu
    • Organizer
      International Workshop on Nitride semiconductor 2022, Berlin
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K23241
  • [Presentation] 気相反応抑制下におけるAlN高温成長の最適化のためのV/III比依存性2022

    • Author(s)
      富田 敦之, 宮川 拓己, 平山 秀樹, 髙島 祐介, 直井 美貴, 永松 謙太郎
    • Organizer
      第14回ナノ構造エピタキシャル成長講演会
    • Data Source
      KAKENHI-PROJECT-23K23241
  • [Presentation] Dependence of c-plane sapphire misorientation angle in high temperature AlN growth and specific step bunching at large angle2022

    • Author(s)
      Takumi Miyagawa, Atsushi Tomita, Shota Tsuda, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi, Kentaro Nagamatsu
    • Organizer
      International Workshop on Nitride semiconductor 2022, Berlin
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-23K23241
  • [Presentation] The improvement of crystal orientation in AlN with controlled inversion domain2022

    • Author(s)
      Shota Tusuda, Takumi Miyagawa, Reiya Aono, Atsushi Tomita, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi, and Kentaro Nagamatsu
    • Organizer
      Photonics West 2022, 12001-67, San Francisco.
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K21006
  • [Presentation] Lateral epitaxial overgrowth by mass transport in AlN with the temperature of 17002022

    • Author(s)
      Takumi Miyagawa, Atsushi Tomita, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu
    • Organizer
      International Workshop on Nitride semiconductor 2022, Berlin
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K21006
  • [Presentation] Threshold temperature in annihilation radius of dislocation for AlN2022

    • Author(s)
      Shota Tusuda, Takumi Miyagawa, Reiya Aono, Atsushi Tomita, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi, and Kentaro Nagamatsu
    • Organizer
      Photonics West 2022, 12001-66, San Francisco.
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K21006
  • [Presentation] The reduction of adduct formation during high-temperature growth in AlN by jet gas stream metalorganic vapor phase epitaxy2022

    • Author(s)
      Kentaro Nagamatsu, Shota Tsuda, Takumi Miyagawa, Reiya Aono, Hideki Hirayama, Yuusuke Takashima, and Yoshiki Naoi
    • Organizer
      Photonics West 2022, 12001-6, San Francisco.
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K21006
  • [Presentation] Dependence of c-plane sapphire misorientation angle in high temperature AlN growth and specific step bunching at large angle2022

    • Author(s)
      Takumi Miyagawa, Atsushi Tomita, Shota Tsuda, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi and Kentaro Nagamatsu
    • Organizer
      International Workshop on Nitride semiconductor 2022, Berlin
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20K21006
  • [Presentation] 高温有機金属気相成長法におけるAlNの特異的なステップバンチング2022

    • Author(s)
      宮川 拓己, 津田 翔太, 富田 敦之, 平山 秀樹, 髙島 祐介, 直井 美貴, 永松 謙太郎
    • Organizer
      第69回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K21006
  • [Presentation] 高温有機金属気相成長法におけるAlN成長の気相反応抑制2021

    • Author(s)
      永松謙太郎、津田翔太、青野零弥、宮川学、揚田侑哉、平山秀樹、髙島祐介、直井美貴
    • Organizer
      第68回 応用物理学会春季学術講演会 19p-Z27-14
    • Data Source
      KAKENHI-PROJECT-20K21006
  • [Presentation] AlNの高流速成長における成長メカニズム2021

    • Author(s)
      宮川学、津田翔太、青野零弥、揚田侑哉、平山秀樹、髙島祐介、直井美貴、永松謙太郎
    • Organizer
      第68回 応用物理学会春季学術講演会 19p-Z27-13
    • Data Source
      KAKENHI-PROJECT-20K21006
  • [Presentation] AlNテンプレート上高温AlN結晶成長2021

    • Author(s)
      津田翔太、青野零弥、揚田侑哉、宮川学、平山秀樹、髙島祐介、直井美貴、永松謙太郎
    • Organizer
      第68回 応用物理学会春季学術講演会 19p-Z27-3
    • Data Source
      KAKENHI-PROJECT-20K21006
  • [Presentation] インバージョンドメインの抑制による高品質AlN成長手法の確立2021

    • Author(s)
      津田 翔太, 宮川 拓己, 富田 敦之, 平山 秀樹, 髙島 祐介, 直井 美貴, 永松 謙太郎
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20K21006
  • [Presentation] 気相反応を制御したMOVPEにおけるAlNのV/III比依存性2021

    • Author(s)
      富田 敦之, 津田 翔太, 宮川 拓己, 髙島 祐介, 直井 美貴, 平山 秀樹, 永松 謙太郎
    • Organizer
      第50回日本結晶成長学会
    • Data Source
      KAKENHI-PROJECT-20K21006
  • [Presentation] 低温AlNバッファ層上高温AlN初期成長2021

    • Author(s)
      青野零弥、津田翔太、揚田侑哉、宮川学、平山秀樹、髙島祐介、直井美貴、永松謙太郎
    • Organizer
      第68回 応用物理学会春季学術講演会 19a-Z27-1
    • Data Source
      KAKENHI-PROJECT-20K21006

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