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瀬奈 ハディ
セナ ハディ
Researcher Number
40784674
Other IDs
https://orcid.org/0000-0002-4344-9612
Affiliation (based on the past Project Information)
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2021: 名古屋大学, 未来材料・システム研究所, 研究員
Review Section/Research Field
Principal Investigator
Basic Section 21050:Electric and electronic materials-related
Keywords
Principal Investigator
m-plane AlGaN / m-plane GaN / 2D hole gas (2DHG) / light hole / m-plane GaN device / GaN HEMT / 窒化ガリウム(GaN)
Research Projects
(
1
results)
Project Start Year (Newest)
Project Start Year (Oldest)
m-plane GaN epitaxial growth and lattice strain enable high-speed 2D hole gas transistor
Principal Investigator
Principal Investigator
瀬奈 ハディ
Project Period (FY)
2021
Research Category
Grant-in-Aid for Scientific Research (C)
Review Section
Basic Section 21050:Electric and electronic materials-related
Research Institution
Nagoya University
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