Tomiya Shigetaka 冨谷茂隆

… Alternative Names

冨谷茂隆トミヤシゲタカ

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Researcher Number	40867016
Other IDs
Affiliation (Current)	2025: 奈良先端科学技術大学院大学, データ駆動型サイエンス創造センター, 教授
Affiliation (based on the past Project Information) *help	2025: 奈良先端科学技術大学院大学, データ駆動型サイエンス創造センター, 教授 2023: 奈良先端科学技術大学院大学, データ駆動型サイエンス創造センター, 教授 2022: 東京工業大学, 工学院, 特任教授
Review Section/Research Field	Principal Investigator Basic Section 21050:Electric and electronic materials-related Except Principal Investigator Basic Section 21050:Electric and electronic materials-related
Keywords	Principal Investigator ファンデルワールス層状材料 / コンタクト / プラズマドーピング / ラマン分光 / 透過電子顕微鏡 / 熱電変換 / 遷移金属ダイカルコゲナイド Except Principal Investigator 発光・非発光再結合割合 / キャリア・フォノンマルチモーダル解析 / 半導体熱マネージメント … More / 物性物理 / デバイスシミュレーション / ワイドキャップ半導体 / キャリア拡散 / シミュレータ / 光物性 / 混晶 / 価電子帯 / キャリアダイナミクス / 窒化物半導体 Less

デバイス設計に革新をもたらすキャリア・フォノンマルチモーダル解析技術の開発
- Principal Investigator
  
  福山敦彦
- Project Period (FY)
  2025 – 2028
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  University of Miyazaki
ワイドギャップ半導体デバイスシミュレーションのための物性物理モデル構築
- Principal Investigator
  
  山口敦史
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Kanazawa Institute of Technology
Growth mechanism and thermoelectric conversion property of transition metal dichalcogenides thin filmsPrincipal Investigator
- Principal Investigator
  
  冨谷茂隆
- Project Period (FY)
  2022 – 2024
- Research Category
  
  Grant-in-Aid for Scientific Research (C)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Nara Institute of Science and Technology
  Tokyo Institute of Technology

All 2024 2023 2022

All Journal Article Presentation

[Journal Article] Absolute evaluation of internal and external quantum efficiencies and light extraction efficiency in InGaN single quantum wells by simultaneous photoacoustic and photoluminescence measurements combined with integrating-sphere method2024
- Author(s)
  Mori-Tamamura Keito、Takahashi Yuchi、Sakai Shigeta、Morimoto Yuya、Hirama Junji、Yamaguchi Atsushi A.、Kusanagi Susumu、Kanitani Yuya、Kudo Yoshihiro、Tomiya Shigetaka
- Journal Title
  
  Science and Technology of Advanced Materials: Methods
  
  Volume: 4 Issue: 1 Pages: 2315027-2315027
- DOI
  10.1080/27660400.2024.2315027
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23K03944
[Journal Article] Conductivity Enhancement of PVD-WS2 Films Using Cl2-Plasma Treatment Followed by Sulfur-Vapor Annealing2024
- Author(s)
  Kurohara Keita、Imai Shinya、Hamada Takuya、Tatsumi Tetsuya、Tomiya Shigetaka、Kakushima Kuniyuki、Tsutsui Kazuo、Wakabayashi Hitoshi
- Journal Title
  
  IEEE Journal of the Electron Devices Society
  
  Volume: Early Access Pages: 1-1
- DOI
  10.1109/jeds.2024.3378745
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-22K04181
[Journal Article] Evaluation of radiative and nonradiative recombination lifetimes in c-plane InGaN quantum wells with emission colors ranging from blue to red2023
- Author(s)
  Mori-Tamamura Keito、Morimoto Yuya、Yamaguchi Atsushi A.、Kusanagi Susumu、Kanitani Yuya、Kudo Yoshihiro、Tomiya Shigetaka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 62 Issue: 10 Pages: 105501-105501
- DOI
  10.35848/1347-4065/acf79f
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K03944
[Journal Article] Evaluation of radiative and non-radiative recombination lifetimes in InGaN quantum wells with different ion-implantation damage2023
- Author(s)
  Mori-Tamamura Keito、Morimoto Yuya、Yamaguchi Atsushi A.、Kusanagi Susumu、Kanitani Yuya、Kudo Yoshihiro、Tomiya Shigetaka
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 63 Issue: 1 Pages: 01SP19-01SP19
- DOI
  10.35848/1347-4065/acfb18
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-23K03944
[Journal Article] Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing2022
- Author(s)
  Horiguchi Taiga、Hamada Takuya、Hamada Masaya、Muneta Iriya、Kakushima Kuniyuki、Tsutsui Kazuo、Tatsumi Tetsuya、Tomiya Shigetaka、Wakabayashi Hitoshi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 61 Issue: 7 Pages: 075506-075506
- DOI
  10.35848/1347-4065/ac7621
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-22K04181
[Presentation] Simultaneous microscopic PA/PL line-scan measurements in InGaN-QWs on a stripe-core GaN Substrate2024
- Author(s)
  Shoki Jinno, Keito Mori-Tamamura, Atushi A. Yamaguchi, Susumu Kusanagi, Yuya Kanitani, Shigetaka Tomiya
- Organizer
  SPIE Photonics West 2024
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K03944
[Presentation] アモルファスSiO2 上のスパッタMoS2 膜に対する平面電子顕微鏡解析2024
- Author(s)
  今井慎也，川那子高暢，宗田伊理也，角嶋邦之，辰巳哲也，冨谷茂隆，若林整
- Organizer
  第71回　応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04181
[Presentation] Evaluation of radiative and non-radiative recombination lifetimes in c-plane InGaN quantum wells with different In composition2023
- Author(s)
  Keito Mori-Tamamura1, Yuya Morimoto1, Atsushi A. Yamaguchi1, Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya
- Organizer
  The 14th International Conference on Nitride Semiconductors (ICNS-14)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K03944
[Presentation] Grain-size enlargement of MoS2 film by low-rate sputtering with molybdenum grid2023
- Author(s)
  Shinya Imai, Ryo Ono, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui,　Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi
- Organizer
  The 7th Electron Devices Technology and Manufacturing Conference (IEEE EDTM 2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04181
[Presentation] Improvement of MoS2 film quality by solid-phase crystallization from PVD amorphous MoSx film2023
- Author(s)
  Ryo Ono, Shinya Imai, Takamasa Kawanago, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi
- Organizer
  The 7th Electron Devices Technology and Manufacturing Conference (IEEE EDTM 2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04181
[Presentation] Sheet Resistance Reduction of Sputtered WS2Film by Cl2Plasma Treatment for Thermoelectric Devices2023
- Author(s)
  Kurohara Keita、Imai Shinya、Hamada Takuya、Tatumi Tetsuya、Tomiya Shigetaka、Wakabayashi Hitoshi
- Organizer
  2023 21st International Workshop on Junction Technology (IWJT 2023)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-22K04181
[Presentation] スパッタWS2膜へのCl2プラズマ処理によるドーピングとエッチングの効果2023
- Author(s)
  黒原啓太、今井慎也、冨谷茂隆、辰巳哲也、若林整
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04181
[Presentation] スパッタMoS2膜に対するエッジ金属コンタクトの電流電圧特性2023
- Author(s)
  今井慎也, 梶川亮介, 川那子高暢, 宗田伊理也, 角嶋邦之, 辰巳哲也, 冨谷茂隆, 筒井一生, 若林整
- Organizer
  第84回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-22K04181

1. 山口敦史 (60449428)

# of Collaborated Projects: 2 results

# of Collaborated Products: 5 results
2. 若林整 (80700153)

# of Collaborated Projects: 1 results

# of Collaborated Products: 8 results
3. 福山敦彦 (10264368)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Tomiya Shigetaka 冨谷 茂隆

冨谷 茂隆 トミヤ シゲタカ

Research Projects

Research Products

Co-Researchers

デバイス設計に革新をもたらすキャリア・フォノンマルチモーダル解析技術の開発

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

ワイドギャップ半導体デバイスシミュレーションのための物性物理モデル構築

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

Growth mechanism and thermoelectric conversion property of transition metal dichalcogenides thin filmsPrincipal Investigator

Principal Investigator

Project Period (FY)

Research Category

Review Section

Research Institution

[Journal Article] Absolute evaluation of internal and external quantum efficiencies and light extraction efficiency in InGaN single quantum wells by simultaneous photoacoustic and photoluminescence measurements combined with integrating-sphere method2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Conductivity Enhancement of PVD-WS2 Films Using Cl2-Plasma Treatment Followed by Sulfur-Vapor Annealing2024

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Evaluation of radiative and nonradiative recombination lifetimes in c-plane InGaN quantum wells with emission colors ranging from blue to red2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Evaluation of radiative and non-radiative recombination lifetimes in InGaN quantum wells with different ion-implantation damage2023

Author(s)

Journal Title

DOI

Data Source

[Journal Article] Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing2022

Author(s)

Journal Title

DOI

Data Source

[Presentation] Simultaneous microscopic PA/PL line-scan measurements in InGaN-QWs on a stripe-core GaN Substrate2024

Author(s)

Organizer

Data Source

[Presentation] アモルファスSiO2 上のスパッタMoS2 膜に対する平面電子顕微鏡解析2024

Author(s)

Organizer

Data Source

[Presentation] Evaluation of radiative and non-radiative recombination lifetimes in c-plane InGaN quantum wells with different In composition2023

Author(s)

Organizer

Data Source

[Presentation] Grain-size enlargement of MoS2 film by low-rate sputtering with molybdenum grid2023

Author(s)

Organizer

Data Source

[Presentation] Improvement of MoS2 film quality by solid-phase crystallization from PVD amorphous MoSx film2023

Author(s)

Organizer

Data Source

[Presentation] Sheet Resistance Reduction of Sputtered WS2Film by Cl2Plasma Treatment for Thermoelectric Devices2023

Author(s)

Organizer

Data Source

[Presentation] スパッタWS2膜へのCl2プラズマ処理によるドーピングとエッチングの効果2023

Author(s)

Organizer

Data Source

[Presentation] スパッタMoS2膜に対するエッジ金属コンタクトの電流電圧特性2023

Author(s)

Organizer

Data Source

Tomiya Shigetaka 冨谷茂隆

冨谷茂隆トミヤシゲタカ