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TANAKA Akira  田中 昭

ORCIDConnect your ORCID iD *help
Researcher Number 50022265
Other IDs
External Links
Affiliation (based on the past Project Information) *help 2007: Shizuoka University, Research Institute of Electronics, Associate Professor
2005 – 2006: 静岡大学, 電子工学研究所, 助教授
1996 – 1998: 静岡大学, 電子工学研究所, 助教授
1987 – 1994: 静岡大学, 電子工学研究所, 助教授
1990: Research Institute of Electronics, Associate Professor, 助教授
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials
Except Principal Investigator
電子材料工学 / Electronic materials/Electric materials / Nanomaterials/Nanobioscience
Keywords
Principal Investigator
infrared detector / compositional conversion / solution growth / alloy semiconductor / 赤外受光素子 / 組成変換 / 液相成長 / 混晶半導体
Except Principal Investigator
液相成長 / liquid phase epitaxy … More / Lattice-matching / Alloy / Silicon-germanium / III-V compound / Silicon / yo-yo solute feeding method / Specific gravity difference method / 高感度なフォトダイオード / 高輝度発光素子用半導体混晶の成長 / 格子不整合緩和層の成長 / 均質組成をもつ混晶の成長法 / 重金属不純物のゲッタリング効果 / シリコンの液相成長 / シリコン-ゲルマニウム / 重力効果 / 格子整合 / 混晶 / シリコンーゲルマニウム / III-V族化合物 / シリコン / yo-yo溶質供給法 / 比重差液相成長法 / Radical / Quantum effect / MOCVD / Optical device / Zinoxide / 発光デバイス / 自己組織化ナノ構造 / 発効デバイス / 酸化物半導体 / 酸化亜鉛半導体薄膜 / ラジカル / 量子効果 / 有機金属気相堆積法 / 光デバイス / 酸化亜鉛 / compositional conversion / negative electron affinity / gallium nitride / NEA / 組成変換 / 負の電子親和力 / 窒化ガリウム / oxidation / p-n junction / crystal pulling / liquid phase crystal growth / bulk crystal / germanium-silicon alloy / thermoelectric device / 熱電変換 / バルク混晶 / ゲルマニウム-シリコン混晶 / 酸化 / p-n接合 / 引上げ法 / バルク結晶 / ゲルマニウム・シリコン混晶 / 熱電素子 / physical vapor deposition / quasi-closed slide boat / ZnSe substrate / ZnSe-GaAs alloy / ZnSe / 青色発光素子材料 / セレン化亜鉛ー砒化ガリウム混晶 / 物理的気相成長 / 擬似密閉スライドボート / セレン化亜鉛結晶基板 / 液相エピタキシャル成長 / セレン化亜鉛-砒化ガリウム混晶 / セレン化亜鉛 / Lattice-Mismatch / Liquid Phase Epitaxy / Crystal Growth / Green Light-Emitting Diode / Alloy Substrate / GaInP / 異種接合 / 燐化ガリウム・インジウム混晶 / 格子不整 / 結晶成長 / 緑色発光ダイオ-ド / 混晶基板 / 燐化ガリウム・インジウム Less
  • Research Projects

    (7 results)
  • Research Products

    (1 results)
  • Co-Researchers

    (4 People)
  •  ZnO-based semiconductor nanostructures for optical quantum devices

    • Principal Investigator
      TEMMYO Jiro
    • Project Period (FY)
      2005 – 2007
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Nanomaterials/Nanobioscience
    • Research Institution
      Shizuoka University
  •  Formation of GaN layers by liquid phase epitaxy and its application to high efficient NEA devices

    • Principal Investigator
      SUKEGAWA Tokuzo
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Shizuoka University
  •  Growth of InAsSb alloy layrs by compositional conversition and its application to mid-infrared sensing devicesPrincipal Investigator

    • Principal Investigator
      TANAKA Akira
    • Project Period (FY)
      1996 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Shizuoka University
  •  Liquid phase growth of GeSi bulk alloy and application to thermoelectric devices

    • Principal Investigator
      SUGEGAWA Tokuzo
    • Project Period (FY)
      1993 – 1994
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Shizuoka University
  •  LPE growth of ZnSe and ZnSe-GaAs alloy and their application

    • Principal Investigator
      SUKEGAWA Tokuzo
    • Project Period (FY)
      1991 – 1992
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      電子材料工学
    • Research Institution
      Shizuoka University
  •  Liquid Phase Epitaxial Growth of GaInp Alloy Thick Layer and its Application

    • Principal Investigator
      SUKEGAWA Tokuzo
    • Project Period (FY)
      1989 – 1990
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      電子材料工学
    • Research Institution
      Research Institute of Electronics, Shizuoka University
  •  Specific gravity difference method in liquid phase epitaxial growth of semiconductor

    • Principal Investigator
      SUKEGAWA Tokuzo
    • Project Period (FY)
      1987 – 1988
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      電子材料工学
    • Research Institution
      Shizuoka University

All 2005

All Patent

  • [Patent] 半導体発光素子の製造方法2005

    • Inventor(s)
      中村, 天明, 青木, 田中
    • Industrial Property Rights Holder
      静岡大学
    • Industrial Property Number
      2005-247902
    • Filing Date
      2005-08-29
    • Data Source
      KAKENHI-PROJECT-17310070
  • 1.  SUKEGAWA Tokuzo (30006225)
    # of Collaborated Projects: 6 results
    # of Collaborated Products: 0 results
  • 2.  KIMURA Masakazu (50177929)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 0 results
  • 3.  TEMMYO Jiro (90334961)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 4.  AOKI Toru (10283350)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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