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YAMAMOTO Yasuhiro  山本 康博

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… Alternative Names

山本 康博  ヤマモト ヤスヒロ

YAMAMOTO Yashhiro  山本 康博

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Researcher Number 50139383
Other IDs
External Links
Affiliation (Current) 2025: 法政大学, その他部局等, 名誉教授
Affiliation (based on the past Project Information) *help 1994 – 2004: 法政大学, 工学部, 教授
1986 – 1987: 法政大学, イオンビーム工学研究所, 助教授
Review Section/Research Field
Principal Investigator
Applied materials science/Crystal engineering
Except Principal Investigator
Electronic materials/Electric materials / 電子材料工学 / Electronic materials/Electric materials / Applied materials science/Crystal engineering
Keywords
Principal Investigator
IBIEC / SOI / SiGe / CeO_2 / Ion Beam Sputtering / Interface Reaction / Amorphous Silicon / Hetro Epitaxy / 核的散乱 / イオンの電子 … More / 固相エピタキシ / ランプ加熱 / イオンビームスパッタ / 界面反応 / アモルファスシリコン / イオンビーム誘起結晶化 / ヘテロエピタキシ … More
Except Principal Investigator
LSI / 高速化 / CMP / 銅配線 / 配線層 / Delamination / イオン注入 / 薄膜 / シリコン / Ohmic contact / Interconnection / Gate / Ion implantation / Silicide / フジュンブツブンプ / イオンチュウニュウ / デンキョク / 不純物プロファイル / 配線 / ゲート電極 / タングステン / シリサイド / Copper-hexafluoro-silicate electrolytic solution / Low resistivity Cu layer / Electroplating / High speed logic LSI / Cu interconnection layer / LSI's / 比抵抗 / 銅メッキ / 超LSI / 核生成制御 / 比抵抗低減 / メッキ膜 / ケイフッ化銅メッキ液 / 低比抵抗銅膜 / メッキ / 銅配線層 / planarizatrion / Adhesion strength / Thermal stability / Cu interconnection / Low ε interlayer / LSI層間絶縁膜 / 定着力向上 / 耐熱性向上 / 多層配線層 / 超LSI高速化 / 耐熱性 / 低誘電率膜 / 平坦化 / 密着力 / 界面反応 / 高速LSI / 低誘電率層間膜 / Thin layr / Sol / Si / H / Ion Implantation / ハクマク / はく離 / デラミネーション / SOI / 水素イオン / Electron Beam Irradiation / Epitaxial Growth / Silicon / Cerium Dioxide / 絶縁物薄膜 / 電子ビーム照射 / イオン化蒸着 / ヘテロエピタキシ / 二酸化セリウム(CeO_2) / Conformality / Ta / Target / Beam distribution / Collimation / Sputtering / カクドブンプ / マクシツ / チタン / コリメータ / ビーム角 / メタル膜 / オーミックコンタクト / コンフオマリティ / チタンマク / ターゲット / コリメーション / スパッタ Less
  • Research Projects

    (7 results)
  • Co-Researchers

    (5 People)
  •  An Electroplating of Low Resistivity Copper Interconnection Lines

    • Principal Investigator
      HARA Tohru
    • Project Period (FY)
      2003 – 2004
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hosei University
  •  Thermally stable low dielectric constant interlayers for high speed MOS LSI's

    • Principal Investigator
      HARA Tohru
    • Project Period (FY)
      2000 – 2002
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hosei University
  •  Epitaxial growth of Si on Insulator using Ion Beam Induced Epitaxial CrystallizationPrincipal Investigator

    • Principal Investigator
      YAMAMOTO Yasuhiro
    • Project Period (FY)
      1998 – 2000
    • Research Category
      Grant-in-Aid for Scientific Research (B).
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Hosei University
  •  Fundamental Research of the Delamination by H^+ Implantation

    • Principal Investigator
      HARA Tohru
    • Project Period (FY)
      1996 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hosei Univ.
  •  Epitaxial Growth of CeO_2(110) Layrs on Si(100) Substrates

    • Principal Investigator
      INOUE Tomoyasu
    • Project Period (FY)
      1995 – 1997
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Iwaki Meisei University
  •  Fundamental Study on The Collimation Sputtering

    • Principal Investigator
      HARA Tohru
    • Project Period (FY)
      1994 – 1995
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Hosei University
  •  Ion Implantation in Sillicides and Metals

    • Principal Investigator
      HARA Tohru
    • Project Period (FY)
      1986 – 1987
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      電子材料工学
    • Research Institution
      Hosei University
  • 1.  HARA Tohru (00147886)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 0 results
  • 2.  SATO Masataka (40215843)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 3.  INOUE Tomoyasu (60193596)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 4.  HAMANAKA Hiromi (10061235)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 5.  長野 昌三
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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