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KAMATA Norihiko  鎌田 憲彦

ORCIDConnect your ORCID iD *help
Researcher Number 50211173
External Links
Affiliation (Current) 2022: 埼玉大学, 理工学研究科, 教授
Affiliation (based on the past Project Information) *help 2009 – 2020: Saitama University, 理工学研究科, 教授
2011: 埼玉大学, 大学院・理工学研究科, 教授
2007: Saitama University, School of Science and Engineering, Professor
2006: 埼玉大学, 大学院理工学研究科, 教授
2004 – 2005: Saitama University, Faculty of Engineering, Prof., 工学部, 教授 … More
1998 – 2003: 埼玉大学, 工学部, 助教授
2000 – 2001: 埼玉大学, 工学部・機能材料工学科, 助教授
1994 – 1996: 埼玉大学, 工学部, 助教授 Less
Review Section/Research Field
Principal Investigator
Applied materials science/Crystal engineering / Applied optics/Quantum optical engineering / Applied materials science/Crystal engineering / Inorganic materials/Physical properties / Crystal engineering / Basic Section 30010:Crystal engineering-related
Except Principal Investigator
電子デバイス・機器工学 / Electronic materials/Electric materials / Science and Engineering / Crystal engineering
Keywords
Principal Investigator
フォトルミネッセンス / 非発光再結合準位 / photoluminescence / GaN / 光物性 / 欠陥準位 / 禁制帯内準位 / 量子井戸構造 / 内部量子効率 / 2波長励起フォトルミネッセンス … More / non-radiative recombination center / below-gap state / quantum well / internal quantum efficiency / 量子井戸 / nonradiative recombination center / ポリシラン / ゾルゲル法 / 無機有機ハイブリッド / 光導電膜 / 2波長励起 / 非接触測定 / 半導体 / 光学評価 / 結晶工学 / 禁制帯内励起 / 希土類イオン / 蛍光ガラス / 共鳴エネルギー移動 / 蛍光体 / 濃度消光 / Rare-Earth Ions / Fluorescent Glasses / Resonant-Energy Transfer / Phosphor / Concentration Quenching / バンド間発光 / 半導体発光デバイス / 非発光最結合パラメーター / 非発光再結合パラメーター / 非発光再結合パラメータ / band-to-band emission / light emitting devices / non-radiative recombination parameters / 青色発光半導体 / 窒化ガリウム / ガリウムナイトライド / two-wavelength excited phptoluminescence / blue-light emitting semiconductor / galium nitride / 紫外・青色発光材料 / 量子ドット / UV-and blue-light emitting materials / quantum dot / 結晶評価 / 量子閉じ込め / characterization / optical properties / quantum wel / UV-LED / 青~緑色LED / 非発光再結合 / 禁制帯内励起光 / 青色LED / 緑色LED / 紫外LED / 動作時の欠陥検出 / 高効率化 … More
Except Principal Investigator
ポリシラン / エネルギー移動 / EL素子 / 結晶成長 / マイクロチャネルプレート / 2次電子増倍 / 感光性ガラス / 鉛ガラス / ゾル・ゲル法 / フォトエッチング / LED / フラットディスプレイ / シリコンエッチング / マイクロマシン / ジフェニルポリシラン / 可溶性ポリジフェニルシラン / 白色発光 / 発光 / ポリシラン合成 / 発光素子 / polysilane / Soluble polydiphenylsilane / spin-coated film / energy transfer / EL devices / white luminescence / 水溶性 / ゾルゲルガラス / 有機色素 / ゾル-ゲルガラス / ゾルーゲルガラス / シクロデキストリン / 可溶性、水溶性 / ポリジフェニルシラン / ポリシラン封止ガラス / 有機色素混合薄膜 / Polysilane / Water Soluble / Sol-Gel Glass / Electroluminescence / Organic Dyes / Energy Transfer / 特異構造結晶 / 深紫外LED / テラヘルツ量子カスケードレーザ / THz-QCL / テラヘルツQCL / THz-QCL / 深紫外LD / 量子エレクトロニクス / 量子カスケードレーザー / 窒化物半導体 / 未開拓波長 / サブバンド間遷移 / テラヘルツ / バンド内遷位 / 超格子 / バンド内遷位発光 / バンド内遷移 / 量子カスケードレーザ Less
  • Research Projects

    (16 results)
  • Research Products

    (352 results)
  • Co-Researchers

    (15 People)
  •  Characterization of defect levels in UV-LEDs by below-gap excitation light under operating conditionPrincipal Investigator

    • Principal Investigator
      Kamata Norihiko
    • Project Period (FY)
      2018 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 30010:Crystal engineering-related
    • Research Institution
      Saitama University
  •  Research on novel light emitting devices using the unique properties generated by singularity of crystal

    • Principal Investigator
      Hideki Hirayama
    • Project Period (FY)
      2016 – 2020
    • Research Category
      Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
    • Review Section
      Science and Engineering
    • Research Institution
      Institute of Physical and Chemical Research
  •  Research on unexplored frequency quantum-cascade lasers using nitride semiconductors

    • Principal Investigator
      Hirayama Hideki
    • Project Period (FY)
      2015 – 2019
    • Research Category
      Grant-in-Aid for Scientific Research (S)
    • Research Field
      Crystal engineering
    • Research Institution
      Institute of Physical and Chemical Research
  •  Luminescence Microscope for Detecting Energy Distribution of Non-Radiative Recombination CentersPrincipal Investigator

    • Principal Investigator
      KAMATA Norihiko
    • Project Period (FY)
      2013 – 2015
    • Research Category
      Grant-in-Aid for Challenging Exploratory Research
    • Research Field
      Crystal engineering
    • Research Institution
      Saitama University
  •  Comprehensive multi-level spectroscopy of below-gap states without electrodePrincipal Investigator

    • Principal Investigator
      KAMATA Norihiko
    • Project Period (FY)
      2012 – 2014
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Saitama University
  •  Characterization of Defect Levels with Energy and Spatial Distribution by Deep Level MicroscopePrincipal Investigator

    • Principal Investigator
      KAMATA Norihiko
    • Project Period (FY)
      2009 – 2011
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Saitama University
  •  2段階ゾルゲル法による広波長帯域の光導電性複合薄膜Principal Investigator

    • Principal Investigator
      鎌田 憲彦
    • Project Period (FY)
      2005 – 2006
    • Research Category
      Grant-in-Aid for Exploratory Research
    • Research Field
      Inorganic materials/Physical properties
    • Research Institution
      Saitama University
  •  Spatial and Temporal Characterization of Nonradiative recombination centers by Using the Method of Two-Wavelength Excited PhotoluminescencePrincipal Investigator

    • Principal Investigator
      KAMATA Norihiko
    • Project Period (FY)
      2005 – 2007
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Saitama University
  •  Versatile and Quantitative Spectrometer of Nonradiative recombination centers by Using Two-Wavelength Excitation methodPrincipal Investigator

    • Principal Investigator
      KAMATA Norihiko
    • Project Period (FY)
      2002 – 2004
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Saitama University
  •  Development of electroluminescence device containing water soluble polysilane and organic dyes in sol-gel glass

    • Principal Investigator
      TERUNUMA Daiyo
    • Project Period (FY)
      2002 – 2004
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Saitama University
  •  Spectroscopy of Non-Radiative Recombination Centers in Blue-Light Emitting Semiconductors by Two-Wavelength Excitation SchemePrincipal Investigator

    • Principal Investigator
      KAMATA Norihiko
    • Project Period (FY)
      2000 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      Saitama University
  •  EL devices using efficient energy transfer from polydiphenylsilane derivative to organic dyes

    • Principal Investigator
      TERAMURA Daiyo
    • Project Period (FY)
      2000 – 2001
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Saitama University
  •  Spectroscopy of Non-Radiative Recombination Centers in Semiconductors for Light Emitting DevicesPrincipal Investigator

    • Principal Investigator
      KAMATA Norihiko
    • Project Period (FY)
      1998 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Applied optics/Quantum optical engineering
    • Research Institution
      Saitama University
  •  高密度集積化フルカラーLEDディスプレイの開発

    • Principal Investigator
      高橋 幸郎
    • Project Period (FY)
      1996
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Saitama University
  •  ゾル・ゲル法による2次電子増倍膜を用いたMCPの開発

    • Principal Investigator
      TAKAHASHI Kohroh
    • Project Period (FY)
      1995
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      Saitama University
  •  Control of Emission Spectrum in Rare-Earth-Doped Glasses by Light IrradiationPrincipal Investigator

    • Principal Investigator
      KAMATA Norihiko
    • Project Period (FY)
      1994 – 1995
    • Research Category
      Grant-in-Aid for General Scientific Research (C)
    • Research Field
      Applied optics/Quantum optical engineering
    • Research Institution
      Saitama University

All 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 2002 Other

All Journal Article Presentation Book Patent

  • [Book] 新編「照明専門講座テキスト」第35期2019

    • Author(s)
      鎌田憲彦、神野雅文、清水恵一、八田章光、松島公嗣、宇山徹、池田紘一、入倉隆、佐々木淳、別所誠、鵜川浩一、上谷芳昭、田淵義彦、吉澤望、松下美紀、河合悟、稲森真、近藤俊幸、鯨井政祐、土井正、村上克介、木下忍、桑原克佳、長篤志、橋本和明
    • Publisher
      一般社団法人照明学会, 印刷所㈱サンワ
    • Data Source
      KAKENHI-PROJECT-18K04954
  • [Book] 新編「照明専門講座テキスト」第34期2018

    • Author(s)
      鎌田分担執筆
    • Total Pages
      19
    • Publisher
      一般社団法人照明学会
    • Data Source
      KAKENHI-PROJECT-18K04954
  • [Book] 信学技報2016

    • Author(s)
      大島一晟、定昌史、前田哲利、鎌田憲彦、平山秀樹
    • Total Pages
      111
    • Publisher
      電子情報通信学会
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Book] 新編「照明専門講座テキスト」第31期2015

    • Author(s)
      鎌田憲彦,池田紘一, 稲森真, 入倉隆, 上谷芳昭, 鵜川浩一, 宇山徹, 垣谷勉,河合悟, 木下忍, 坂本政佑, 佐藤孝, 神野雅文, 田淵義彦, 長篤志, 土井正, 橋本和明, 八田章光, 松島公嗣, 村上克介
    • Total Pages
      374
    • Publisher
      一般社団法人照明学会
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Book] 「光エレクトロニクス 展開編」2014

    • Author(s)
      多田邦雄, 神谷武志(監訳), 鎌田憲彦, 石川卓也, 板谷太郎, 伊藤文彦, 岡田至崇, 土屋昌弘, 中野義昭, 中林隆志, 林秀樹(共訳)
    • Publisher
      丸善出版株式会社
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Book] 新編「照明専門講座テキスト」2014

    • Author(s)
      鎌田憲彦,池田紘一, 稲森真, 入倉隆, 上谷芳昭, 鵜川浩一, 宇山徹, 垣谷勉,河合悟, 木下忍, 坂本政佑, 佐藤孝, 神野雅文, 田淵義彦, 長篤志, 土井正, 橋本和明, 八田章光, 松島公嗣, 村上克介(分担執筆)
    • Publisher
      一般社団法人照明学会
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Book] ヤリ―ヴ‐イェー 「光エレクトロニクス展開編」2014

    • Author(s)
      多田邦雄, 神谷武志(監訳), 鎌田憲彦, 石川卓也, 板谷太郎, 伊藤文彦, 岡田至崇, 土屋昌弘, 中野義昭, 中林隆志, 林秀樹(共訳)
    • Publisher
      丸善出版株式会社
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Book] 新編「照明専門講座テキスト」2014

    • Author(s)
      鎌田憲彦,池田紘一, 稲森真, 入倉隆, 上谷芳昭, 鵜川浩一, 宇山徹, 垣谷勉,河合悟, 木下忍, 坂本政佑, 佐藤孝, 神野雅文, 田淵義彦, 長篤志, 土井正, 橋本和明, 八田章光, 松島公嗣, 村上克介(分担執筆)
    • Publisher
      一般社団法人照明学会
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Book] 薄膜の評価技術ハンドブック2013

    • Author(s)
      金原粲監修, 吉田貞史他編集(鎌田分担執筆)
    • Total Pages
      620
    • Publisher
      テクノシステム
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Book] 薄膜の評価技術ハンドブック2013

    • Author(s)
      金原粲監修, 吉田貞史他編集(鎌田分担執筆)
    • Total Pages
      620
    • Publisher
      テクノシステム
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Book] 薄膜の評価技術ハンドブック2013

    • Author(s)
      金原粲監修, 吉田貞史, 他編集(鎌田分担執筆)
    • Total Pages
      620
    • Publisher
      テクノシステム
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Book] 光エレクトロニクス基礎編(2010年8月刊)2010

    • Author(s)
      Amnon Yariv, Pochi Yeh著多田邦雄・神谷武志監訳(鎌田憲彦分担訳)
    • Total Pages
      541
    • Publisher
      丸善(株)出版事業部
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Book] 電子材料ハンドブック (木村忠正他編著)2006

    • Author(s)
      鎌田憲彦(「半導体材料」主査)
    • Publisher
      朝倉書店
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Book] 電子材料ハンドブック(2006.11.30刊行)(木村忠正他編著)2006

    • Author(s)
      鎌田憲彦(「半導体材料」主査)
    • Publisher
      朝倉書店
    • Data Source
      KAKENHI-PROJECT-17656210
  • [Book] 電子材料ハンドブック(木村忠正他編著)2006

    • Author(s)
      鎌田憲彦(「半導体材料」主査)
    • Publisher
      朝倉書店(最終校正中)
    • Data Source
      KAKENHI-PROJECT-17656210
  • [Book] 電子材料ハンドブック(木村忠正他編著)2006

    • Author(s)
      鎌田 憲彦(「半導体材料」主査)
    • Publisher
      朝倉書店(最終校正中)
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Book] 電子材料ハンドブック(木村忠正, 八百隆文, 奥村次徳, 豊田太郎編集)2005

    • Author(s)
      鎌田憲彦(3章編集主査)
    • Publisher
      朝倉書店(現在編集校正中)(編集中)
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350002
  • [Journal Article] Spectroscopy of Nonradiative Recombination Levels by Two‐Wavelength Excited Photoluminescence2020

    • Author(s)
      Kamata Norihiko
    • Journal Title

      physica status solidi (b)

      Volume: 258

    • DOI

      10.1002/pssb.202000370

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-18K04954
  • [Journal Article] Temperature dependence of nonradiative recombination processes in UV-B AlGaN quantum well revealed by below-gap excitation light2020

    • Author(s)
      M. Ismail Hossain, Yuri Itokazu, Shunsuke Kuwaba, Norihiko Kamata, and Hideki Hirayama
    • Journal Title

      Optical Materials

      Volume: 105

    • DOI

      10.1016/j.optmat.2020.109878

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04954
  • [Journal Article] Superlattice period dependence on nonradiative recombination centers in the n-AlGaN layer of UV-B region revealed by below-gap excitation light2020

    • Author(s)
      M. Ismail Hossain, Yuri Itokazu, Shunsuke Kuwaba, Norihiko Kamata, Noritoshi Maeda, and Hideki Hirayama
    • Journal Title

      AIP Advances

      Volume: 10

    • DOI

      10.1063/1.5134698

    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04954
  • [Journal Article] Nonradiative recombination centers in deep UV-wavelength AIGaN quantum wells detected by below-gap excitation light2019

    • Author(s)
      Hossain M. Ismail、Itokazu Yuri、Kuwaba Shunsuke、Kamata Norihiko、Maeda Noritoshi、Hirayama Hideki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Issue: SC Pages: SCCB37-SCCB37

    • DOI

      10.7567/1347-4065/ab1069

    • NAID

      210000156272

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed / Open Access / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-18K04954
  • [Journal Article] Influence of the nucleation conditions on the quality of AlN layers with high-temperature annealing and regrowth processes2019

    • Author(s)
      Itokazu Yuri、Kuwaba Shunsuke、Jo Masafumi、Kamata Norihiko、Hirayama Hideki
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 58 Issue: SC Pages: SC1056-SC1056

    • DOI

      10.7567/1347-4065/ab1126

    • NAID

      210000156252

    • ISSN
      0021-4922, 1347-4065
    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Journal Article] Milliwatt power UV-A LEDs developed by using n-AlGaN superlattice buffer layers grown on AlN templates2019

    • Author(s)
      Matsumoto Takuma、Ajmal Khan M、Maeda Noritoshi、Fujikawa Sachie、Kamata Norihiko、Hirayama Hideki
    • Journal Title

      Journal of Physics D: Applied Physics

      Volume: 52 Pages: 115102-115102

    • DOI

      10.1088/1361-6463/aaf60a

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Journal Article] Study of Nonradiative Recombination Centers in n-GaN Grown on LT-GaN and AlN Buffer Layer by Below-Gap Excitation2018

    • Author(s)
      M. D. Haque, M. Julkarnain, A. Z. M. Touhidul Islam, N. Kamata and T. Fukuda
    • Journal Title

      Advances in Material Physics and Chemistry

      Volume: 8 Pages: 143-155

    • DOI

      10.4236/ampc.2018.83010

    • Peer Reviewed / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04954
  • [Journal Article] Impact of thermal treatment on the growth of semipolar AlN on m-plane sapphire2018

    • Author(s)
      Jo Masafumi、Morishita Naoki、Okada Narihito、Itokazu Yuri、Kamata Norihiko、Tadatomo Kazuyuki、Hirayama Hideki
    • Journal Title

      AIP Advances

      Volume: 8 Pages: 105312-105312

    • DOI

      10.1063/1.5052294

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Journal Article] AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes2017

    • Author(s)
      Hirayama Hideki、Kamata Norihiko、Tsubaki Kenji
    • Journal Title

      III-Nitride Based Light Emitting Diodes and Applications

      Volume: 133 Pages: 267-299

    • DOI

      10.1007/978-981-10-3755-9_10

    • Peer Reviewed / Open Access
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Journal Article] Structural and electrical properties of semipolar (11-22) AlGaN grown on m -plane (1-100) sapphire substrates2017

    • Author(s)
      Masafumi Jo, Issei Oshima, Takuma Matsumoto, Noritoshi Maeda, Norihiko Kamata and Hideki Hirayama
    • Journal Title

      Phys. Status Solidi (c)

      Volume: -

    • DOI

      10.1002/pssc.201600248

    • Peer Reviewed
    • Data Source
      KAKENHI-PLANNED-16H06420, KAKENHI-PROJECT-15H05733
  • [Journal Article] Trap and nonradiative centers in Ba3Si6O12N2:Eu2+phosphors observed by thermoluminescence and two-wavelength excited photoluminescence methods2015

    • Author(s)
      T. Li, N. Kamata, Y. Kotsuka, T. Fukuda, Z. Honda and T. Kurushima
    • Journal Title

      Opt. Express

      Volume: 23

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Journal Article] Nonradiative centers in deep-UV AlGaN-based quantum wells revealed by two-wavelength excited photoluminescence2015

    • Author(s)
      N. Kamata, A. Z. M. Touhidul Islam, M. Julkarnain, N. Murakoshi, T. Fukuda, and H. Hirayama
    • Journal Title

      Phys. Status Solidi B

      Volume: 252 Pages: 936-939

    • DOI

      10.1002/pssb.201451582

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24360005, KAKENHI-PROJECT-25600087
  • [Journal Article] Dominant nonradiative centers in InGaN single quantum well by time-resolved and two-wavelength excited photoluminescence2015

    • Author(s)
      M. Julkarnain, N. Murakoshi, A. Z. M. Touhidul Islam, T. Fukuda, N. Kamata, and Y. Arakawa
    • Journal Title

      Phys. Status Solidi B

      Volume: 252 Pages: 952-955

    • DOI

      10.1002/pssb.201451499

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24360005, KAKENHI-PROJECT-25600087
  • [Journal Article] Below-gap emission bands in undoped GaN and its excitation density dependence2015

    • Author(s)
      M. Julkarnain, T. Fukuda, N. Kamata. and Y. Arakawa
    • Journal Title

      Phys. Status Solidi C

      Volume: 1-3 Pages: 10190-10190

    • DOI

      10.1002/pssc.201510190

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Journal Article] Direct growth and controlled coalescence of thick AlN template on micro-circle patterned Si substrate2015

    • Author(s)
      B. T. Tran, H. Hirayama, N. Maeda, M. Jo, S. Toyoda and N. Kamata
    • Journal Title

      Scientific Report, Nature

      Volume: 5 Pages: 14734-14734

    • DOI

      10.1038/srep14734

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-15H05733, KAKENHI-PROJECT-25600087
  • [Journal Article] Photoluminescence Characterization of Nonradiative Recombination Centers in Light Emitting Materials by Utilizing Below-Gap Excitation, A Mini Review of Two-Wavelength Excited Photoluminescence2015

    • Author(s)
      N. Kamata, Abu Zafor Md. Touhidul Islam
    • Journal Title

      Rajshahi University Journal of Science and Engineering

      Volume: 43 Pages: 1-9

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Journal Article] 第14回照明の科学と技術に関する国際シンポジウム(LS14)に参加して2015

    • Author(s)
      大森信哉, 明石行生, 鎌田憲彦, 神野雅文
    • Journal Title

      照明学会誌論文号

      Volume: 99 Pages: 90-93

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Journal Article] A direct evidence of allocating yellow luminescence band in undoped GaN by two-wavelength excited photoluminescence2015

    • Author(s)
      M.Julkarnain, T.Fukuda, N. Kamata and Y. Arakawa
    • Journal Title

      Appl. Phys. Lett.

      Volume: 107

    • DOI

      10.1063/1.4936243

    • Peer Reviewed / Acknowledgement Compliant / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Journal Article] 深紫外LEDの光取出し効率の向上に向けて2015

    • Author(s)
      平山秀樹、定昌史、前田哲利、鹿嶋行雄、鎌田憲彦
    • Journal Title

      月刊OPTRONICS 11月号特集「深紫外LEDの効率向上と市場展開への期待」

      Volume: 34 Pages: 101-105

    • Data Source
      KAKENHI-PROJECT-25600087
  • [Journal Article] Optical detection of nonradiative recombination centers in AlGaN quantum wells for deep UV region2014

    • Author(s)
      A. Z. M. Touhidul Islam, Naoki Murakoshi, Takeshi Fukuda, Hideki Hirayama, and Norihiko Kamata
    • Journal Title

      Phys. Status Soldi C

      Volume: 11 Pages: 832-835

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Journal Article] Optical detection of nonradiative recombination centers in AlGaN quantum wells for deep UV region2014

    • Author(s)
      A. Z. M. Touhidul Islam, Naoki Murakoshi, Takeshi Fukuda, Hideki Hirayama, and Norihiko Kamata
    • Journal Title

      Phys. Status Soldi C

      Volume: 11 Pages: 832-835

    • Peer Reviewed / Acknowledgement Compliant
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Journal Article] Optical detection of nonradiative recombination centers in AlGaN quantum wells for deep UV region2014

    • Author(s)
      59) A.Z.M.Touhidul Islam,N.Murakoshi,T.Fukuda, H.Hirayama,and N.Kamata
    • Journal Title

      Phys.Status.Solidi C

      Volume: C 11 Pages: 832-835

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Journal Article] 素子透明化によるAlGaN深紫外LEDの光取出し効率の高効率化2014

    • Author(s)
      平山秀樹、前田哲利、藤川紗知恵、豊田史郎、鎌田憲彦
    • Journal Title

      OPTRONICS

      Volume: 386 Pages: 58-66

    • Data Source
      KAKENHI-PROJECT-24360005
  • [Journal Article] MOCVDを用いたGaN/ALGaNテラヘルツ量子カスケードレーザー(THz-QCL)の作製と7THz発振動作2014

    • Author(s)
      豊田史朗, 寺嶋亘, 鎌田憲彦, 平山秀樹
    • Journal Title

      電子情報通信学会, 信学技報

      Volume: ED2014-84 Pages: 1-4

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Journal Article] MOCVDを用いたGaN/ALGaNテラヘルツ量子カスケードレーザー(THz-QCL)の作製と7THz発振動作2014

    • Author(s)
      豊田史朗, 寺嶋亘, 鎌田憲彦, 平山秀樹
    • Journal Title

      電子情報通信学会, 信学技報

      Volume: ED2014-84 Pages: 1-3

    • Data Source
      KAKENHI-PROJECT-25600087
  • [Journal Article] Optical Detection of Nonradiative Recombination Centers in AlGaN Quantum Wells for Deep UV Region2014

    • Author(s)
      A. Z. M. Touhidul Islam, N. Murakoshi, T. Fukuda, H. Hirayama and N. Kamata
    • Journal Title

      Phys. Stat. Sol. C

      Volume: 11 Pages: 832-835

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Journal Article] 「第14回照明の科学と技術に関する国際シンポジウム(LS14)に参加して」2014

    • Author(s)
      大森信哉,明石行生,鎌田憲彦,神野雅文
    • Journal Title

      照明学会誌論文号

      Volume: 99 Pages: 90-93

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Journal Article] Direct Evidence of Carrier Excitation from Intermediate Band States in GaPN by Two-Wavelength Excited Photoluminescence2013

    • Author(s)
      Abu Zafor Muhammad Touhidul Islam, Tsukasa Hanaoka, Kentaro Onabe, Shuhei Yagi, Norihiko Kamata, and Hiroyuki Yaguchi
    • Journal Title

      Appl. Phys. Express

      Volume: 6, 092401 Pages: 3-3

    • NAID

      10031199865

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Journal Article] AlGaN系率紫外LEDの進展2013

    • Author(s)
      平山秀樹、藤川紗知恵、鎌田憲彦
    • Journal Title

      電気学会論文誌 C

      Volume: 133 Pages: 1-3

    • Data Source
      KAKENHI-PROJECT-24360005
  • [Journal Article] (Zn1-xMx)3V2O8蛍光体の作製とフォトルミネッセンス評価2013

    • Author(s)
      李 廷廷, 本多 善太郎, 福田 武司, 羅 交;蓮, 鎌田 憲彦
    • Journal Title

      電子情報通信学会技術研究報告

      Volume: 112 Pages: 33-36

    • Data Source
      KAKENHI-PROJECT-25600087
  • [Journal Article] (Zn1-xMx)3V2O8蛍光体の作製とフォトルミネッセンス評価2013

    • Author(s)
      李 廷廷, 本多 善太郎, 福田 武司, 羅 交蓮, 鎌田 憲彦
    • Journal Title

      信学技報

      Volume: 112 Pages: 33-36

    • Data Source
      KAKENHI-PROJECT-24360005
  • [Journal Article] 照明機器を活用した技術の評価・活用に関する教具開発と授業実践2012

    • Author(s)
      山本利二, 玉川拓実, 鎌田憲彦
    • Journal Title

      教材学研究

      Volume: 23 Pages: 189-196

    • NAID

      130007812425

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Journal Article] Ba3Si6O12N2:Eu2+蛍光体の2波長励起フォトルミネッセンス評価2012

    • Author(s)
      石岡亮, 五十嵐航平, 福田武司, 下村康夫, 鎌田憲彦
    • Journal Title

      信学技報, EID2011-19

      Volume: Vol.111 Pages: 21-24

    • Data Source
      KAKENHI-PROJECT-21360003
  • [Journal Article] Growth of flat p-GaN contact layer by pulse flow method for high light-extraction AlGaN deep-UV LEDs with Al-based electrode2012

    • Author(s)
      M. Akiba, H. Hirayama, Y. Tomita, Y. Tsukada, N. Maeda, and A. Kamata
    • Journal Title

      Phys. Status Solidi C

      Volume: 9 Pages: 806-809

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Journal Article] Ba_3Si_6O_12N_2:Eu^<2+>蛍光体の2波長励起フォトルミネッセンス評価2012

    • Author(s)
      石岡亮、五十嵐航平、福田武司、下村康夫、鎌田憲彦
    • Journal Title

      電子情報通信学会 信学技報 電子ディスプレイ研究会EID2011-19 (2012.1.27)

      Volume: 111 Pages: 21-24

    • NAID

      10030321971

    • Data Source
      KAKENHI-PROJECT-21360003
  • [Journal Article] Ba_3Si_6O_<12>N_2 : Eu^<2+>蛍光体のフォトー及び熱ルミネッセンス評価2011

    • Author(s)
      石岡亮, 五十嵐航平, 福田武司, 木島直人, 鎌田憲彦
    • Journal Title

      電子情報通信学会EID2010-28

      Pages: 25-28

    • NAID

      10027800099

    • Data Source
      KAKENHI-PROJECT-21360003
  • [Journal Article] AlGaN系深紫外LEDの進展と展望2011

    • Author(s)
      平山秀樹、藤川紗千恵、塚田悠介、鎌田憲彦
    • Journal Title

      応用物理

      Volume: 80(Invited Review) Pages: 319-324

    • NAID

      10027969857

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Journal Article] AlGaN系深紫外LEDの進展と展望(Invited Review)2011

    • Author(s)
      平山秀樹, 藤川紗千恵, 塚田悠介, 鎌田憲彦
    • Journal Title

      応用物理

      Volume: Vol.80, No.4 Pages: 319-324

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Journal Article] 222nm Deep-Ultraviolet AlGaN Quantum WelLight-Emitting Diode with Vertical Emission Properties2010

    • Author(s)
      平山秀樹, N.Noguchi, 鎌田憲彦
    • Journal Title

      Appl.Phys.Exp. 3

      Pages: 32102-32102

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Journal Article] Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN LEDs by Using a Multiquantum-Barrier Electron Blocking Layer2010

    • Author(s)
      H. Hirayama, Y. Tsukada, T. Maeda, N. Kamata
    • Journal Title

      Appl. Phys. Exp.

      Volume: 3

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Journal Article] Ba_3Si_6O_<12>N_2:Eu^<2+>蛍光体のフォトー及び熱ルミネッセンス評価2010

    • Author(s)
      石岡亮、五十嵐航平、福田武司、木島直人、鎌田憲彦
    • Journal Title

      電子情報通信学会技術研究報告(EID2010-28)

      Volume: Vol.110,No.404 Pages: 25-28

    • NAID

      10027800099

    • Data Source
      KAKENHI-PROJECT-21360003
  • [Journal Article] 深紫外域AlGaN-LEDの高品質化2010

    • Author(s)
      鎌田憲彦, 乗松潤, 塚田悠介, 秋葉雅弘, 福田武司, 平山秀樹
    • Journal Title

      Proc.Human Photonics Forum

      Pages: 22-27

    • Data Source
      KAKENHI-PROJECT-21360003
  • [Journal Article] 222nm Deep-Ultraviolet AlGaN QW Light-Emitting Diode with Vertical Emission Properties2010

    • Author(s)
      H. Hirayama, N. Noguchi, N. Kamata
    • Journal Title

      Appl. Phys. Exp.

      Volume: 3

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Journal Article] 深紫外領域AlGaN系結晶のフォトルミネッセンス評価2010

    • Author(s)
      五十嵐航平、石岡亮、塚田悠介、福田武司、本多善太郎、平山秀樹、鎌田憲彦
    • Journal Title

      電子情報通信学会技術研究報告(EID2010-31)

      Volume: Vol.110,No.404 Pages: 41-44

    • NAID

      10027800136

    • Data Source
      KAKENHI-PROJECT-21360003
  • [Journal Article] Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer2010

    • Author(s)
      平山秀樹, 塚田悠介, T.Maeda, 鎌田憲彦
    • Journal Title

      Appl.Phys.Exp. 3

      Pages: 31002-31002

    • NAID

      10027013818

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Journal Article] Fabrication of a low threading dislocation density ELO-AlN template for application to deep-UV LEDs2010

    • Author(s)
      平山秀樹, S.Fujikawa, 乗松潤, T.Takano, K.Tsubaki, 鎌田憲彦
    • Journal Title

      Phys.Stat.Sol.(c) (in press)

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Journal Article] Fabrication of Low Threading Dislocation Density ELO-AlN Template for Application to Deep-UV LEDs2009

    • Author(s)
      H. Hirayama, S. Fujikawa, J. Norimatsu, T. Takano, K. Tsubaki, N. Kamata
    • Journal Title

      Phys. Stat. Sol.(c)

      Volume: 6, Issue S2

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Journal Article] 222nm single-peaked deep-UV LED with thin AlGaN quantum well layer2009

    • Author(s)
      N.Noguchi, 平山秀樹, T.Yatabe, 鎌田憲彦
    • Journal Title

      Phys.Stat.Sol.(c) 6

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Journal Article] 222-282nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire2009

    • Author(s)
      平山秀樹, S.Fujikawa, N.Noguchi, 乗松潤, T.Takano, K.Tsubaki, 鎌田憲彦
    • Journal Title

      Physica Status Solidi A 206

      Pages: 1176-1182

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Journal Article] 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire2009

    • Author(s)
      H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, N. Kamata
    • Journal Title

      Physica Status Solidi (a)

      Volume: 206 Pages: 1176-1182

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Journal Article] Fabrication of low threading dislocation density ELO-AlN template for application to deep-UV LEDs2009

    • Author(s)
      H. Hirayama, S. Fujikawa, J. Norimatsu, T. Takano, K. Tsubaki, N. Kamata
    • Journal Title

      Phys. Stat. Sol.(c)

      Volume: Vol.6, Issue S2

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Journal Article] 深紫外域組成InAlGaNの結晶成長とLEDの作製2008

    • Author(s)
      鎌田憲彦
    • Journal Title

      第2回フロンティアフォトニクスフォーラム No.10

      Pages: 33-35

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] 顕微光学系によるLED用結晶の2波長励起フォトルミネッセンス評価2008

    • Author(s)
      内山直威、山口朋彦、小川博久、鎌田憲彦
    • Journal Title

      電子情報通信学会電子ディスプレイ研究会 EID2007-70

      Pages: 41-44

    • NAID

      10025648416

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] Laser-Induced Formation of Nonradiative Centers Observed by Two-Wavelength Excited Photoluminescence2008

    • Author(s)
      H. Ogawa, N. Uchiyama, N. Kamata and Y. Arakawa
    • Journal Title

      Special Issue in Physica Status Solidi (Accepted for publication)

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] 顕微光学系によるLED用結晶の2波長励起フォトルミネッセンス評価2008

    • Author(s)
      内山 直威, 山口 朋彦, 小州 博久, 鎌田 憲彦
    • Journal Title

      電子情報通信学会電子ディスプレイ研究会 EID2007-70

      Pages: 41-44

    • NAID

      10025648416

    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] Characterization of Crystals for LEDs by Two-Wavelength excited Photoluminescence with Microscopic Optics2008

    • Author(s)
      N. Uchiyama, T. Yamaguchi, H. Ogawa and N. Kamata
    • Journal Title

      Electronic Display Conf. of IEICE, Jpn. E1D2007-70

      Pages: 41-44

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] Growth of InAlGaN Crystals and Fabrication of Deep-UV LEDs2008

    • Author(s)
      N. Kamata
    • Journal Title

      Proc. 2nd Frontier Photonics Forum

      Pages: 33-35

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] 深紫外域組成lnAIGaNの結晶成長とLEDの作製2008

    • Author(s)
      鎌田 憲彦
    • Journal Title

      第2回フロンティアフォトニクスフォーラム 10

      Pages: 33-35

    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] 231-261nm AlGaN Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Multilayer Buffers Grown by Ammonia Pulse-Flow Method on Sapphire2007

    • Author(s)
      H. Hirayama, T. Yatabe, N. Noguchi, T. Ohashi, and N. Kamata
    • Journal Title

      Appl. Phys. Lett. 91

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] AINバッファー高品質化によるAlGaN量子井戸深紫外発光の飛躍的高効率化2007

    • Author(s)
      谷田部透, 大橋智昭, 平山秀樹, 野口憲路, 鎌田憲彦
    • Journal Title

      応用物理学関係連合講演会予稿集第1分冊 27a-ZM-3

      Pages: 372-372

    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] NH_3交互供給法による紫外LED用高品質AINバッファー層の実現2007

    • Author(s)
      大橋智昭, 平山秀樹, 谷田部透, 鎌田憲彦
    • Journal Title

      応用物理学関係連合講演会予稿集第1分冊 27a-ZM-4

      Pages: 372-372

    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] TMAIのパルス状供給による極性制御及びAIN/AIGaNテンプレートの高品質化2007

    • Author(s)
      野口憲路, 大橋智昭, 平山秀樹, 鎌田憲彦
    • Journal Title

      応用物理学関係連合講演会予稿集第1分冊 27a-ZM-2

      Pages: 371-371

    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] 導電性高分子/有機色素混合薄膜素子のEL特性2007

    • Author(s)
      山口廣信, 鎌田憲彦, 伊賀貴浩, 河本雄二, 小森谷光央, 小原秀彦, 横尾敏明, 木島直人
    • Journal Title

      電子情報通信学会電子ディスプレイ研究会 EID2006-56

      Pages: 49-52

    • NAID

      10018500187

    • Data Source
      KAKENHI-PROJECT-17656210
  • [Journal Article] 高品質AINバッファー層を用いた深紫外250nmシングルピーク発光LED2007

    • Author(s)
      大橋智昭, 平山秀樹, 谷田部透, 鎌田憲彦
    • Journal Title

      応用物理学関係連合講演会予稿集第1分冊 30p-ZM-8

      Pages: 419-419

    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] 250-280nm深紫外LEDに向けた高内部量子効率AlGaN量子井戸の実現2007

    • Author(s)
      平山秀樹, 大橋智昭, 谷田部透, 鎌田憲彦
    • Journal Title

      応用物理学関係連合講演会予稿集第1分冊 30p-ZM-9

      Pages: 419-419

    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] Nonradiative centers in InAs quantum dots revealed by two-wavelength excited photoluminescence2006

    • Author(s)
      Kamata N., Saravanan S., Zanardi Ocampo J. M., Vaccaro P. 0., Arakawa Y.
    • Journal Title

      Physica B 376-377

      Pages: 849-852

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] Nonradiative centers in InAs quantum dots revealed by two-wavelength excited photoluminescence2006

    • Author(s)
      Kamata N., Saravanan S., Zanardi Ocampo J.M., Vaccaro P.O., Arakawa Y.
    • Journal Title

      Physica B 376-377

      Pages: 849-852

    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] Nonradiative centers in InAs quantum dots revealed by two-wavelength excited photoluminescence2006

    • Author(s)
      N.Kamata, S.Saravanan, J.M.Zanardi Ocampo, P.O.Vaccaro, Y.Arakawa
    • Journal Title

      Physica B in Press

    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] Encapsulation and Stabilization of Emissive Molecules by Sol-Gel Glass2006

    • Author(s)
      E.Kin, T.Harada, N.Kamata, H.Ohara, T.Yokoo, N.Kijima
    • Journal Title

      Proc. 13^<th> Int. Workshop on Inorganic and Organic Electro-luminescence and 2006 Int. Conf. on the Science and Technology of Emissive Displays and Lighting (Jeju, Korea, 18-22 Sept.) Fr3-4

      Pages: 449-450

    • Data Source
      KAKENHI-PROJECT-17656210
  • [Journal Article] ゾルーゲルガラスの作製と発光特性2006

    • Author(s)
      鎌田憲彦
    • Journal Title

      技術情報協会「ゾルーゲル法による光機能性材料の作成とその応用展開」セミナー No. 612427

      Pages: 2-36

    • Data Source
      KAKENHI-PROJECT-17656210
  • [Journal Article] Nonradiative centers in InAs quantum dots revealed by two-wavelength excited photoluminescence2006

    • Author(s)
      N. Kamata, S. Saravanan, J. M. Zanardi Ocampo, P. O. Vaccaro, Y. Arakawa
    • Journal Title

      Physica B. 376-377

      Pages: 849-852

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] Frontier Photonics by advanced Materials2006

    • Author(s)
      N. Kamata
    • Journal Title

      Project Res. Report of General Res. Institute vol. 4

      Pages: 39-42

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] Multilayered Electroluminescence Device by Wet Process2006

    • Author(s)
      M.Komoriya, T.Iga, Y.kawamoto, N.Kamata
    • Journal Title

      Proc. 13^<th> Int. Workshop on Inorganic and Organic Electro-luminescence and 2006 Int. Conf. on the Science and Technology of Emissive Displays and Lighting (Jeju, Korea, 18-22 Sept.) P-I-A13

      Pages: 90-91

    • Data Source
      KAKENHI-PROJECT-17656210
  • [Journal Article] Color Controllability of Polysilane-Based Electroluminescence Device2006

    • Author(s)
      M.Komoriya, A.Matsumoto, Kamata, H.Ohara, T.Yokoo, N.Kijima
    • Journal Title

      Proc. 13^<th> Int. Workshop on Inorganic and Organic Electro-luminescence and 2006 Int. Conf on the Science and Technology of Emissive Displays and Lighting (Jeju, Korea, 18-22 Sept.) Tu3-5

      Pages: 40-41

    • Data Source
      KAKENHI-PROJECT-17656210
  • [Journal Article] Nonradiative centers in InAs quantum dots revealed by two-wavelength excited photoluminescence2005

    • Author(s)
      N. Kamata, S. Saravanan, J. M. Zanardi Ocampo, P. O. Vaccaro, Y. Arakawa
    • Journal Title

      Proc. 23rd Int. Conf. on Defects in semiconductors (ICDS-23), Awaji ThM2.3C

      Pages: 105-105

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] ゾルゲルガラスによる発光性分子の封止機能2005

    • Author(s)
      金永模, 鎌田憲彦, 尾島健太郎, 原田竜二, 幡野健, 照沼大陽, 小原秀彦, 木島直人
    • Journal Title

      電子情報通信学会シリコンフォトニクス研究会 SIPH2004-8

      Pages: 35-40

    • Data Source
      KAKENHI-PROJECT-17656210
  • [Journal Article] Observation of High Internal-Quantum-Efficiency from InAlGaN Quantum Wells Emitting 330nm Wavelength Light2005

    • Author(s)
      H. Hirayama, T. Takano, T. Ohashi, S. Fujikawa, N. Kamata, Y. Kondo,
    • Journal Title

      Electronic Device Conf. of IEICE, Jpn. Vol. 105, No. 326

      Pages: 67-72

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] Nonradiative centers in InAs quantum dots revealed by two-wavelength excited photoluminescence2005

    • Author(s)
      N.Kamata, S.Saravanan, J.M.Zanardi Ocampo, P.O.Vaccaro, Y.Arakawa
    • Journal Title

      Proc.23^<rd> Int.Conf.on Defects in semiconductors (ICDS-23), Awaji ThM2.3C

      Pages: 105-105

    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] Remarkable Increase of Deep UV Emission from Quaternary InAlGaN by Reducing Oxygen and Carbon Impurities2005

    • Author(s)
      T.Ohashi, H.Hirayama, K.Ishibashi, N.Kamata
    • Journal Title

      Proc.Materials Research Society (MRS) Fall Meeting, Boston

    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] Photoconductive Properties of Organic Film onto CMOS Readout Circuit (Invited)2005

    • Author(s)
      Aihara S., Watanabe T., Egami N., Kubota M., Tanioka K., Kamata N., Terunuma D.
    • Journal Title

      Proc.12^<th> Int.Display Workshops in conjunction with Asia Display 2005 (IDW/AD'05) IDS2-3

      Pages: 2057-2060

    • Data Source
      KAKENHI-PROJECT-17656210
  • [Journal Article] InAlGaN4元混晶紫外LEDの高効率化の検討2005

    • Author(s)
      平山秀樹, 大橋智昭, 石橋幸治, 鎌田憲彦
    • Journal Title

      電子情報通信学会技術研究報告「電子デバイス」ED2005-32、CPM2005-24、SDM2005-32 105

      Pages: 91-96

    • NAID

      10016151747

    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] InAlGaN4元混晶紫外LEDの高効率化の検討2005

    • Author(s)
      平山秀樹、大橋智昭、石橋幸治、鎌田憲彦
    • Journal Title

      電子情報通信学会技術研究報告「電子デバイス」ED2005-32、CPM2005-24、SDM2005-32 105

      Pages: 91-96

    • NAID

      10016151747

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] Improved Efficiency of InAlGaN Quaternary UV-LEDs2005

    • Author(s)
      H. Hirayama, T. Ohashi, K. Ishibashi and N. Kamata
    • Journal Title

      Electronic Device Conf. of IEICE, Jpn. Vol. 105, No. 89

      Pages: 91-96

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] ゾルゲル法によるポリシラン-シリカハイブリッド材料の作製2005

    • Author(s)
      尾島健太郎, 金永模, 鎌田憲彦, 幡野 健, 照沼 大陽
    • Journal Title

      電子情報通信学会シリコンフォトニクス研究会 SIPH2004-23

      Pages: 1-5

    • Data Source
      KAKENHI-PROJECT-17656210
  • [Journal Article] 330nm帯紫外発光InAlGaN量子井戸からの高い内部量子効率の観測2005

    • Author(s)
      平山秀樹, 高野隆義, 大橋智昭, 藤川紗千恵, 鎌田憲彦, 近藤行廣
    • Journal Title

      電子情報通信学会技術研究報告「電子デバイス」 105

      Pages: 67-72

    • NAID

      110003500207

    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] CMOS Image Sensor Overlaid with an Organic Photoconductive Film2005

    • Author(s)
      Watanabe T., Aihara S., Egami N., Kubota M., Tanioka K., Kamata N., Terunuma D.
    • Journal Title

      Proc.IEEE Workshop on CCDs and AIS

      Pages: 48-51

    • NAID

      110004046077

    • Data Source
      KAKENHI-PROJECT-17656210
  • [Journal Article] 330nm帯紫外発光InAlGaN量子井戸からの高い内部量子効率の観測2005

    • Author(s)
      平山秀樹、高野隆義、大橋智昭、藤川紗千恵、鎌田憲彦、近藤行廣
    • Journal Title

      電子情報通信学会技術研究報告「電子デバイス」 105

      Pages: 67-72

    • NAID

      110003500207

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] Photoconductive Properties of Organic Films Based on Porphine Complex Evaluated with Image Pickup Tube2005

    • Author(s)
      Aihara S., Miyakawa K., Ohkawa Y., Matsubara T., Takahata T., Suzuki S., Kubota M., Tanioka K., Kamata N., Terunuma D.
    • Journal Title

      Jpn.J.Appl.Phys. 44

      Pages: 3743-3747

    • NAID

      10016440748

    • Data Source
      KAKENHI-PROJECT-17656210
  • [Journal Article] ポリシラン/有機色素混合薄膜による光機能素子2005

    • Author(s)
      河本雄二, 鎌田憲彦, 松本晃, 幡野健, 照沼大陽, 相原聡
    • Journal Title

      電子情報通信学会シリコンフォトニクス研究会 SIPH2004-9

      Pages: 41-45

    • NAID

      120006388534

    • Data Source
      KAKENHI-PROJECT-17656210
  • [Journal Article] Remarkable Increase of Deep UV Emission from Quaternary InAlGaN by Reducing Oxygen and Carbon Impurities2005

    • Author(s)
      T. Ohashi, H. Hirayama, K. Ishibashi and N. Kamata
    • Journal Title

      Proc. Materials Research Society (MRS) Fall Meeting, Boston FF3.2

      Pages: 784-784

    • Description
      「研究成果報告書概要(和文)」より
    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] Nonradiative centers InAs quantum dots revealed by two-wavelength excited photoluminescence2005

    • Author(s)
      N.Kamata, S.Saravanan, J.M.Z.Ocampo, Y.Arakawa
    • Journal Title

      Int.Conf.on Defects in Semiconductors

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14350002
  • [Journal Article] Formation of Eu^<2+> in SiO_2 Al_2O_3 Glass During Thermal Treatment in Sol-Gel Process2004

    • Author(s)
      N.Kamata, K.Tosaka, Z.Honda, K.Yamada
    • Journal Title

      Jpn.J.Appl.Phys. 43

    • NAID

      10012705011

    • Data Source
      KAKENHI-PROJECT-14350002
  • [Journal Article] Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AlGaN quantum well2004

    • Author(s)
      N.Kamata, H.Klausing, T.Someya, Y.Arakawa et al.
    • Journal Title

      The European Phys.J.-Applied Physics 27

      Pages: 271-273

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350002
  • [Journal Article] Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AlGaN quantum well2004

    • Author(s)
      N.Kamata, H.Klausing, T.Someya, Y.Arakawa et al.
    • Journal Title

      The European Phys.J.-Applied Phys. 27

      Pages: 271-273

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14350002
  • [Journal Article] Effect of Modulation-Doping on Luminescence Properties of Plasma Assisted MBE-Growm GaN/AlGaN Quantum Well2004

    • Author(s)
      N.Kamata, H.Klausing, T.Someya, Y.Arakawa et al.
    • Journal Title

      The European Phys.J.-Appl.Phys. 27

      Pages: 271-273

    • Data Source
      KAKENHI-PROJECT-14350002
  • [Journal Article] BaMgAl_<10>O_<17>:Eu^<2+>蛍光体の熱及び光ルミネッセンス2004

    • Author(s)
      馬峰治, 鎌田憲彦, 木島直人, 下村康夫, 小原秀彦
    • Journal Title

      埼玉大学地域共同研究センター紀要 No.4

      Pages: 75-78

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350002
  • [Journal Article] Effect of modulation-doping on luminescence properties of plasma assisted MBE-grown GaN/AlGaN quantum well2003

    • Author(s)
      N.Kamata, H.Klausing, T.Someya, Y.Arakawa et al.
    • Journal Title

      10^<th> Int.Conf.on Defects : Recognition, Imaging and Physics in Semiconductors 10

      Pages: 35-35

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350002
  • [Journal Article] Improved quality of plasma assisted MBE-grown GaN/AlGaN quantum wells revealed by two-wavelength excited photoluminescence2003

    • Author(s)
      H.Klausing, N.Kamata, T.Someya, T.Arakawa et al.
    • Journal Title

      Techn.Digest,5^<th> Int, Conf.on Nitride Semiconductors 5

      Pages: 253-253

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350002
  • [Journal Article] Improved quality of plasma assisted MBE-grown GaN/AlGaN quantum wells revealed by two-wavelength excited photoluminescence2003

    • Author(s)
      H.Klausing, N.Kamata, T.Someya, Y.Arakawa et al.
    • Journal Title

      Phys.Stat.Sol.(c) 0

      Pages: 2658-2661

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350002
  • [Journal Article] Wavelength selectivities of organic photoconductive films : Dye-doped polysilanes and zinc p hthalocyanine/tris-8-hydroquinoline aluminum double layer2003

    • Author(s)
      S.Aihara, Y.Hirano, T.Tajima, K.Tanioka, M.Abe, N.Saito, N.Kamata, D.Terunuma
    • Journal Title

      Applied Physics Lett. 82

      Pages: 511-513

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350158
  • [Journal Article] Wavelength selectivities of organic photoconductive films : Dye-doped polysilanes and zinc phthalocyanine/tris-8-hydroquinoline aluminum double layer2003

    • Author(s)
      S.Aihara, Y.Hirano, T.Tajima, K.Tanioka, M.Abe, N.Saito, N.Kamata, D.Terunuma
    • Journal Title

      Applied Physics Lett. 82

      Pages: 511-513

    • Data Source
      KAKENHI-PROJECT-14350158
  • [Journal Article] Image picup from zinc phtarocyanine/bathocuproine double-layer film using picup tube2003

    • Author(s)
      S.Aihara, K.Tanioka, N.Kamata, D.Terunuma, et al.
    • Journal Title

      Jpn.J.Appl.Phys. 42

      Pages: 801-803

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350158
  • [Journal Article] Efficient energy transfer from polysilane molecules and its application to electroluminescence2003

    • Author(s)
      N.Kamata, D.Terunuma, R.Ishii, H.Satoh, S.Aihara, Y.Yaoita, S.Tonsy
    • Journal Title

      J.Organometallic Chemistry 685

      Pages: 235-242

    • Data Source
      KAKENHI-PROJECT-14350158
  • [Journal Article] Improved quality of plasma assisted MBE-grown GaN/AlGaN quantum wells revealed by two-wavelength excited photoluminescence2003

    • Author(s)
      H.Klausing, N.Kamata, T.Someya, Y.Arakawa et al.
    • Journal Title

      Techn.Digest, 5^<th> Int, Conf.on Nitride Semiconductors 5

      Pages: 253-253

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14350002
  • [Journal Article] Image picup from zinc phtarocyanine/bathocuproine double-layer film using picup tube2003

    • Author(s)
      S.Aihara, K.Tanioka, N.Kamata, D.Terunuma, et al.
    • Journal Title

      Jpn.J.Appl. Phys. 42

      Pages: 801-803

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14350158
  • [Journal Article] Image picup from zinc phtarocyanine/bathocuproine double-layer film using picup tube.2003

    • Author(s)
      S.Aihara, K.Tanioka, N.Kamata, D.Terunuma, et al.
    • Journal Title

      Jpn.J.Appl.Phys. 42

      Pages: 801-803

    • Data Source
      KAKENHI-PROJECT-14350158
  • [Journal Article] Below-gap recombination dynamics in GaN revealed by time-resolved and two-wavelength excited photoluminescence2002

    • Author(s)
      N.Kamata, J.M.Z.Ocampo, T.Someya, Y.Arakawa et al.
    • Journal Title

      Materials Science and Engineering B91-92

      Pages: 290-293

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350002
  • [Journal Article] Temperature dependence of photoluminescence intensity change due to below-gap excitation in GaN2002

    • Author(s)
      N.Kamata, J.M.Z.Ocampo, T.Someya
    • Journal Title

      Inst.Phys.Conf.Ser. No.170

      Pages: 843-848

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350002
  • [Journal Article] Temperature dependence of photoluminescence intensity change due to below-gap excitation in GaN2002

    • Author(s)
      N.Kamata, J.M.Z.Ocampo, T.Someya, et al.
    • Journal Title

      Inst.Phys.Conf.Ser. No.170

      Pages: 843-848

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14350002
  • [Journal Article] Laser-Induced Formation of Nonradiative Centers Observed by Two-Wavelength Excited Photoluminescence

    • Author(s)
      H.Ogawa, N.Uchiyama, N.Kamata and Y.Arakawa
    • Journal Title

      Special Issue in Physica Status Solidi (Accepted for publication )

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] Photoconductive Properties of Organic Films Based on Porphine Complex Evaluated with Image Pickup Tubes

    • Author(s)
      S.Aihara, K.Miyakawa, Y.Ohkawa, T.Matsubara, T.Takahata, S.Suzuki, M.Kubota, K.Tanioka, N.Kamata, D.Terunuma
    • Journal Title

      Jpn.J.Appl. Phys. (In press)

    • NAID

      10016440748

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-14350158
  • [Journal Article] 深紫外領域AlGaN系結晶のフォトルミネッセンス評価

    • Author(s)
      五十嵐航平, 石岡亮, 塚田悠介, 福田武司, 本多善太郎, 平山秀樹, 鎌田憲彦
    • Journal Title

      電子情報通信学会EID2010-31

      Pages: 41-44

    • NAID

      10027800136

    • Data Source
      KAKENHI-PROJECT-21360003
  • [Journal Article] Photoconductive Properties of Organic Films Based on Porphine Complex Evaluated with Image pickup Tube

    • Author(s)
      相原, 宮川, 大川, 松原, 高畠, 鈴木, 久保田, 谷岡, 鎌田, 照沼
    • Journal Title

      Jpn.J.Appl.Phys. (in press)

    • NAID

      10016440748

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350158
  • [Journal Article] Nonradiative centers InAs quantum dots revealed by two-wavelength excited photoluminescence

    • Author(s)
      N.Kamata, S.Saravanan, J.M.Z.Ocampo, Y.Arakawa
    • Journal Title

      Proc.Int.Conf.on Defects in Semiconductors (accepted)

    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-14350002
  • [Journal Article] Laser-Induced Formation of Nonradiative Centers Observed by Two-Wavelength Excited Photoluminescence

    • Author(s)
      H. Ogawa, N. Uchiyama, N. Kamata and Y. Arakawa
    • Journal Title

      Physica Status Solidi (accepted for publication)

    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Journal Article] Photoconductive Properties of Organic Films Based on Porphine Complex Evaluated with Image Pickup Tube

    • Author(s)
      相原, 宮川, 大川, 松原, 高畠, 鈴木, 久保田, 谷岡, 鎌田, 照沼
    • Journal Title

      Jpn.J.Appl.Phys. In press

    • NAID

      10016440748

    • Data Source
      KAKENHI-PROJECT-14350158
  • [Patent] 顕微フォトルミネッセンス測定装置及び測定方法2010

    • Inventor(s)
      鎌田憲彦, 大木孝一
    • Industrial Property Rights Holder
      鎌田憲彦, 大木孝一
    • Acquisition Date
      2010-01-29
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Patent] 顕微フォトルミネッセンス測定装置及び測定方法2010

    • Inventor(s)
      鎌田憲彦、大木孝一
    • Industrial Property Rights Holder
      鎌田憲彦、大木孝一
    • Filing Date
      2010-01-29
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Patent] 光半導体素子及びその製造方法2010

    • Inventor(s)
      平山秀樹, 大橋智明, 鎌田憲彦
    • Industrial Property Rights Holder
      平山秀樹, 大橋智明, 鎌田憲彦
    • Acquisition Date
      2010-06-25
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Patent] 光半導体素子およびその製造方法2007

    • Inventor(s)
      平山 秀樹, 大橋 智昭, 鎌田 憲彦
    • Industrial Property Rights Holder
      理研、埼玉大学
    • Filing Date
      2007-08-27
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Patent] 光半導体素のおよびその製造方法2007

    • Inventor(s)
      平山 秀樹, 大橋 智昭, 鎌田 憲彦
    • Industrial Property Rights Holder
      理研、埼玉大学
    • Filing Date
      2007-08-27
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Patent] 光半導体素子およびその製造方法2007

    • Inventor(s)
      平山秀樹、大橋智昭、鎌田憲彦
    • Industrial Property Rights Holder
      理研、埼玉大学
    • Industrial Property Number
      2007-219890
    • Filing Date
      2007-08-27
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Patent] 光半導体素子およびその製造方法2007

    • Inventor(s)
      平山秀樹、大橋智昭、鎌田憲彦
    • Industrial Property Rights Holder
      理研、埼玉大学
    • Industrial Property Number
      2007-219910
    • Filing Date
      2007-08-27
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] InGaN-LED動作時の禁制帯内励起光照射による非発光再結合準位の検出2021

    • Author(s)
      千代田 夏樹、鎌田 憲彦、矢口 裕之
    • Organizer
      第68回応用物理学会春季学術講演会、19p-Z29-2
    • Data Source
      KAKENHI-PROJECT-18K04954
  • [Presentation] 中間バンド型GaPN混晶のキャリア再結合過程の光学的評価:窒素濃度1.4%と3.2%の比較2021

    • Author(s)
      岩井 宏樹、フェルドス サンジーダ、鎌田 憲彦、八木 修平、矢口 裕之
    • Organizer
      第68回応用物理学会春季学術講演会、19p-Z29-1
    • Data Source
      KAKENHI-PROJECT-18K04954
  • [Presentation] 電流注入と光励起を用いた UV-LED 内の欠陥準位の検出2020

    • Author(s)
      白井 草汰、千代田 夏樹、鎌田 憲彦、糸数 雄吏、山初 駿太、平山 秀樹
    • Organizer
      第67回応用物理学会春季学術講演会、14p-PB2-6、(2020.3.14)
    • Data Source
      KAKENHI-PROJECT-18K04954
  • [Presentation] 電流注入と光励起を用いたUV-LED内の欠陥準位の検出2020

    • Author(s)
      白井草汰,千代田夏樹,鎌田憲彦,糸数雄吏,山初駿太,平山秀樹
    • Organizer
      第67回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] AlGaN歪制御に向けたAlGaN/AlN界面構造とアニール効果の検討2019

    • Author(s)
      糸数雄吏,桑葉俊輔,定昌史,鎌田憲彦,平山秀樹
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] Nonradiative Recombination Centers in UVB AIGaN Quantum Well and Their Temperature Dependence Revealed by Below-Gap Excitation Light2019

    • Author(s)
      M. Ismail Hossain, Yuri Itokazu, Shunsuke Kuwaba, Norihiko Kamata, Noritoshi Maeda and Hideki Hirayama
    • Organizer
      The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019), MoP-CH-12(Poster), Okinawa, Nov.11, 2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04954
  • [Presentation] Carrier Recombination Processes in GaAs- and GaN-Based Semiconductors and Optical Characterization of Defect Levels,2019

    • Author(s)
      Norihiko Kamata
    • Organizer
      5th Int. Conf. on Computer, Communication, Chemical, Materials & Electronic Engineering (IC4ME2), Keynote-2 (Invited), Rajshahi (Bangladesh), July 12, 2019
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04954
  • [Presentation] AlGaN UVC LEDs directly grown on DC-sputtered and high temperature annealed AlN templates2019

    • Author(s)
      S. Kuwaba, Y. Itokazu, S. Motegi, Y. Mogami, A. Osawa, K. Osaki, Y. Tamioka, A. Maeoka, M. Jo, N. Kamata and H. Hirayama
    • Organizer
      13th International Conference on Nitride Semiconductors (ICNS-13)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] Nonradiative recombination centers in UVB AlGaN quantum well and their temperature dependence revealed by below-gap excitation light2019

    • Author(s)
      M. I. Hossain, Y. Itokazu, S. Kuwaba, N. Kamata, N. Maeda, and H. Hirayama
    • Organizer
      The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] Detection of Nonradiative Recombination Levels in UV-LEDs by Irradiating Below-Gap Excitation Light2019

    • Author(s)
      Norihiko Kamata, Ken Matsuda, Sota Shirai, Zentaro Honda, and Hideki Hirayama
    • Organizer
      Compound Semiconductor Week (CSW) 2019, TuP-D-11 (Poster), Nara, May 21, 2019
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04954
  • [Presentation] Nonradiative Recombination Centers in UV-LED Chips Detected by Below-Gap Excitation Light,2019

    • Author(s)
      Ken Matsuda, Sota Shirai, Zentaro Honda, and Norihiko Kamata,
    • Organizer
      2019 Asia-Pacific Conf. on Engineering and Natural Sciences (APICENS)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04954
  • [Presentation] Investigation of AlGaN/AlN interface structure and annealing effect for control of strain re- laxation2019

    • Author(s)
      Y. Itokazu, S. Kuwaba, M. Jo, N. Kamata, and H. Hirayama
    • Organizer
      The 9th Asia-Pacific Workshop on Widegap Semiconductors (APWS2019)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] Influence of the strain relaxation on the optical property of AlGaN quantum wells2019

    • Author(s)
      Y. Itokazu, Y. Mogami, S. Kuwaba, S. Motegi, A. Osawa, K. Osaki, Y. Tamioka, M. Jo, N. Kamata and H. Hirayama
    • Organizer
      13th International Conference on Nitride Semiconductors (ICNS-13)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] 固体の中の光と影 -光の科学と固体光源の可能性を拓く技術-2019

    • Author(s)
      鎌田憲彦
    • Organizer
      2019年度(第52回)照明学会全国大会(招待講演), 九州大学伊都キャンパス, 2019年9月12日
    • Invited
    • Data Source
      KAKENHI-PROJECT-18K04954
  • [Presentation] Characterization of AIGaN based lower bound (280-300nm) UVB LED device grown by MOCVD2018

    • Author(s)
      M. A. Khan, Y. Itokazu, T. Matsumoto, S. Minami, N. Maeda, M. Jo, N. Kamata and H. Hirayama
    • Organizer
      11th International Conference on Plasma-Nano Technology & Science (ISPlasma2018/IC-PLANTS2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] 深紫外AlGaN発光ダイオード特性のp-AlGaN膜厚依存性2018

    • Author(s)
      桑葉 俊輔、糸数 雄吏、定 昌史、鎌田 憲彦、平山 秀樹
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-18K04954
  • [Presentation] Milliwatt Power UVA LEDs Developed by Using AlGaN Superlattice (SL) Buffer Layers Fabricated on AlN/Sapphire Templates2018

    • Author(s)
      Muhammad Ajmal Khan, Takuma Matsumoto, Yuri Itokazu, Noritoshi Maeda, Masafumi Jo, Norihiko Kamata, and Hideki Hirayama
    • Organizer
      The 19th Int. Conf. on Metalorganic Vapor Phase Epitaxy ICMOVPE
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04954
  • [Presentation] 高温アニール処理AlN上に作製したUVC-LEDの高効率動作2018

    • Author(s)
      糸数雄吏,桑葉俊輔,定昌史,鎌田憲彦,平山秀樹
    • Organizer
      日本学術振興会162委員会第110回研究会・特別公開シンポジウム
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] 深紫外AlGaN発光ダイオード特性のp-AlGaN膜厚依存性2018

    • Author(s)
      桑葉俊輔,糸数雄吏,定昌史,鎌田憲彦,平山秀樹
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] 半極性AIN/サファイアの結晶成長とUVC-LED実現へのアプローチ2018

    • Author(s)
      定昌史, 糸数雄吏, 桑葉俊輔, 鎌田憲彦, 平山秀樹
    • Organizer
      独立行政法人日本学術振興会 ワイドギャップ半導体光・電子デバイス第162委員会, 第110回研究会・特別公開シンポジウム「紫外発光デバイスの最前線と将来展望」
    • Data Source
      KAKENHI-PROJECT-18K04954
  • [Presentation] 325nm emission from highly transparent AlGaN UVA LEDs grown on AlN template in the LP-MOCVD2018

    • Author(s)
      M. A. Khan, T. Matsumoto, Y. Itokazu, N. Maeda, M. Jo, N. Kamata and H. Hirayama
    • Organizer
      The 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] Efficient carrier injection in UVC AlGaN LEDs with thick p-AlGaN layers2018

    • Author(s)
      Shunsuke Kuwaba, Yuri Itokazu, Masafumi Jo, Norihiko Kamata, and Hideki Hirayama
    • Organizer
      The Int. Workshop on Nitride Semiconductors (IWN2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04954
  • [Presentation] Narrow band milliwatts power operation of AlGaN based UVB LED for medical applications2018

    • Author(s)
      M. A. Khan, T. Matsumoto, N. Maeda, M. Jo, N. Kamata and H. Hirayama
    • Organizer
      International Conference on UV LED Technologies & Applications (ICULTA-2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] UVCレーザダイオード実現へのアプローチ2018

    • Author(s)
      前田哲利,定昌史,松本卓磨,鎌田憲彦,平山秀樹
    • Organizer
      日本学術振興会162委員会第110回研究会・特別公開シンポジウム
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] 高温アニール・再成長により作製したAlNの結晶性に及ぼす核形成条件の影響2018

    • Author(s)
      糸数 雄吏、桑葉 俊輔、定 昌史、鎌田 憲彦、平山 秀樹
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-18K04954
  • [Presentation] 半極性AlN/サファイアの結晶成長とUVC-LED実現へのアプローチ2018

    • Author(s)
      定昌史,糸数雄吏,桑葉俊輔,鎌田憲彦,平山秀樹
    • Organizer
      日本学術振興会162委員会第110回研究会・特別公開シンポジウム
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] 高温アニール・再成長により作製したAlNの結晶性に及ぼす核形成条件の影響2018

    • Author(s)
      糸数雄吏,桑葉俊輔,定昌史,鎌田憲彦,平山秀樹
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] 325nm Emission From Highly Transparent AlGaN UVA LEDs Grown on AlN Template in the LP-MOCVD2018

    • Author(s)
      Muhammad Ajmal Khan, Takuma Matsumoto, Yuri Itokazu, Noritoshi Maeda, Masafumi Jo, Norihiko Kamata, and Hideki Hirayama
    • Organizer
      The 19th Int. Conf. on Metalorganic Vapor Phase Epitaxy (ICMOVPE)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04954
  • [Presentation] Recent Progress of high-efficiency AlGaN Deep-UV LEDs2018

    • Author(s)
      H. Hirayama, M. Jo, N. Maeda, and N. Kamata
    • Organizer
      16th Symposium on the Science and Technology of Lighting (LS-16)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] Optical Characterization of Defect Levels in AlGaN Multiple Quantum Wells by Using Below-Gap Excitation Light2018

    • Author(s)
      N. Kamata, Y. Itokazu, Md H. Ismail, and H. Hirayama
    • Organizer
      The 2018 Int. Symp. for Advanced Materials Research (ISAMR 2018)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04954
  • [Presentation] Influence of the nucleation condetions on the quality of AlN layers with high-temperature annealing and regrowth processes2018

    • Author(s)
      Y. Itokazu, S. Kuwaba, M. Jo, N. Kamata, and H. Hirayama
    • Organizer
      The International Workshop on Nitride Semiconductors 2018 (IWN2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] Investigation of crystallinity and current injection issue in 310 nm AlGaN UVB LED grown on AlN template in LP-MOVPE2018

    • Author(s)
      M. A. Khan, T. Matsumoto, N. Maeda, M. Jo, Y. Yamada, N. Kamata and H. Hirayama
    • Organizer
      International Symposium on Growth of III-Nitrides (ISGN-7)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] Nonradiative Recombination Centers in AlGaN Deep UV-LEDs Detected by Below Gap Excitation Light2018

    • Author(s)
      M. Ismail Hossain, Yuri Itokazu, Shunsuke Kuwaba, Norihiko Kamata, Noritoshi Maeda, and Hideki Hirayama
    • Organizer
      The Int. Workshop on Nitride Semiconductors (IWN2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04954
  • [Presentation] Nonradiative recombination centers in AlGaN deep UV-LEDs detected by below-gap excitation light2018

    • Author(s)
      M. I. Hossain, Y. Itokazu, S. Kuwaba, N. Kamata, N. Maeda, and H. Hirayama
    • Organizer
      The International Workshop on Nitride Semiconductors 2018 (IWN2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] Milliwatt power UVA LEDs developed by using AlGaN superlattice (SL) buffer layers fabricated on AlN/sapphire templates2018

    • Author(s)
      M. A. Khan, T. Matsumoto, Y. Itokazu, N. Maeda, M. Jo, N. Kamata, and H. Hirayama
    • Organizer
      The 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] Improved Arrangement of Deep UV LEDs for Water-Purification System2018

    • Author(s)
      T. Miya, and N. Kamata
    • Organizer
      The 2018 Int. Symp. for Advanced Materials Research (ISAMR 2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04954
  • [Presentation] Efficient carrier injection in UVC AlGaN LEDs with thick p-AlGaN layers2018

    • Author(s)
      S. Kuwaba, Y. Itokazu, M. Jo, N. Kamata, and H. Hirayama
    • Organizer
      The International Workshop on Nitride Semiconductors 2018 (IWN2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] Nonradiative Recombination Centers in UV-LEDs Detected by Below-Gap Excitention Light Under Current Injection2018

    • Author(s)
      Sota Shirai, Ken Matsuda, Norihiko Kamata, and Zentaro Honda
    • Organizer
      The Int. Workshop on Nitride Semiconductors (IWN2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04954
  • [Presentation] Optical characterization of defect levels in AlGaN multiple quantum wells by using below-gap excitation light2018

    • Author(s)
      N. Kamata, Y. Itokazu, Md H. Ismail, and H. Hirayama
    • Organizer
      The 2018 Int. Symp. for Advanced Materials Research (ISAMR 2018)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] Influence of the nucleation conditions on the quality of AlN layers with high temperature annealing and regrowth processes2018

    • Author(s)
      Yuri Itokazu, Shunsuke Kuwaba, Masafumi Jo, Norihiko Kamata, and Hideki Hirayama
    • Organizer
      The Int. Workshop on Nitride Semiconductors (IWN2018)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-18K04954
  • [Presentation] Exceeding 30% IQE of AlGaN quantum well 304 nm UVB emission and single peak operation of 326nm UV LED2017

    • Author(s)
      M. A. Khan, Y. Itokazu, T. Matsumoto, N. Maeda, M. Jo, H. Hirayama and N. Kamata
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] Nonradiative recombination centers in UV-LEDs reveled by below-gap excitation light at low current injection2017

    • Author(s)
      N. Kamata, K. Matsuda, T. Fukuda and Z. Honda
    • Organizer
      The 11th Int. Symp. on Semiconductor Light Emitting Devices (ISSLED)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05733
  • [Presentation] Over 10 % EQE AlGaN Deep-UV LED developed by using Transparent p-AlGaN Contact Layer2017

    • Author(s)
      H. Hirayama, T. Takano, Jun. Sakai, T. Mino, K. Tsubaki, N. Maeda, M. Jo, I. Ohshima, T. Matsumoto and N. Kamata
    • Organizer
      SPIE Photonic West, Gallium Nitride Materials and Devices XII (OE107)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] Development of UVB LED for medical applications2017

    • Author(s)
      M. Ajmal Khan, Y. Itokazu, T. Matsumoto, S. Minami, N. Maeda, M. Jo, N. Kamata and H. Hirayama
    • Organizer
      理研シンポジウム 第5回「光量子工学」
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] Recent Progress of AlGaN Deep-UV LEDs2016

    • Author(s)
      H. Hirayama, M. Jo, N. Maeda and N. Kamata
    • Organizer
      Int. Symp. on Advanced Plasma Science and its Applications for Nitrides and Nano Materials / Int. Conf. on Plasma-Nano Technology & Science (IS-Plasma 2016 / IC-PLANTS2016)
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2016-03-06
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] Recent Progress of AlGaN Deep-UV LEDs2016

    • Author(s)
      H. Hirayama, M. Jo, N. Maeda and N. Kamata
    • Organizer
      Int. Symp. on the Science and Technology of Lighting (LS-15)
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2016-05-22
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] m面サファイア基板上半導性AlGaN/AlNの結晶成長と量子井戸発光特性2016

    • Author(s)
      大島一晟,定昌史,前田哲利,鎌田憲彦,平山秀樹
    • Organizer
      電子情報通信学会 レーザエレクトロニクス研究会
    • Place of Presentation
      京都大学桂キャンパス(京都府京都市)
    • Year and Date
      2016-12-13
    • Data Source
      KAKENHI-PROJECT-15H05733
  • [Presentation] Recent Progress of AlGaN Deep-UV LEDs2016

    • Author(s)
      H. Hirayama, M. Jo, N. Maeda and N. Kamata
    • Organizer
      IS-Plasma 2016 / IC-PLANTS2016
    • Place of Presentation
      名古屋大学東山キャンパス(名古屋市千種区)
    • Year and Date
      2016-03-08
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05733
  • [Presentation] 光取出し効率改善による高効率(>10%)深紫外LEDの実現2016

    • Author(s)
      前田哲利,定昌史,高野隆好,阪井淳,美濃卓哉,椿健治,大島一晟,松本卓磨,鎌田憲彦,鹿島行雄,松浦恵理子,平山秀樹
    • Organizer
      第4回「光量子工学研究 - 若手・中堅研究者から見た光量子工学の展開 -」
    • Place of Presentation
      理化学研究所(埼玉県和光市
    • Year and Date
      2016-11-01
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] Structural and electrical properties of semipolar (11-22) AlGaN grown on m-plane (1-100) sapphire substrates2016

    • Author(s)
      I. Oshima, T. Matsumoto, N. Maeda, M. Jo, N. Kamata and H. Hirayama
    • Organizer
      International Workshop on Nitride Semiconductors 2016 (IWN2016)
    • Place of Presentation
      Orland, USA.
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05733
  • [Presentation] Structural and electrical properties of semipolar (11-22) AlGaN grown on m-plane (1-100) sapphire substrates2016

    • Author(s)
      I. Oshima, T. Matsumoto, N. Maeda, M. Jo, N. Kamata and H. Hirayama
    • Organizer
      International Workshop on Nitride Semiconductors 2016 (IWN2016)
    • Place of Presentation
      Orland, USA.
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] AlGaN系深紫外LEDの進展と展望2016

    • Author(s)
      平山秀樹、高野隆好、阪井淳、美濃卓哉、椿健治、定昌史、前田哲利、大島一晟、松本卓磨、鎌田憲彦、鹿嶋行雄、松浦恵里子
    • Organizer
      電子情報通信学会
    • Place of Presentation
      北海道大学( 北海道札幌市)
    • Year and Date
      2016-09-20
    • Invited
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] AlGaN系深紫外レーザーダイオード(LD)実現への進展2016

    • Author(s)
      松本卓磨, 大島一晟, 前田哲利, 定昌史, 鎌田憲彦, 平山秀樹
    • Organizer
      第4回「光量子工学研究 - 若手・中堅研究者から見た光量子工学の展開 -」
    • Place of Presentation
      理研和光地区
    • Year and Date
      2016-11-01
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] Two-Wavelength Excited Photoluminescence in 4H-SiC Substrate -Dependence on BGE Power Density-2016

    • Author(s)
      K. Kondo, N. Kamata, S. Yagi, H. Yaguchi, T. Fukuda and Z. Honda
    • Organizer
      Int. Symp. on Compound Semiconductors 2016
    • Place of Presentation
      Toyama, Japan
    • Year and Date
      2016-06-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] Progress of THz Quantum Cascade Laser using Nitride Semiconductor2016

    • Author(s)
      H. Hirayama, W. Terashima, S. Toyoda and N. Kamata
    • Organizer
      74th Device Research Conference (DRC 2016)
    • Place of Presentation
      Newark, USA.
    • Year and Date
      2016-06-19
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05733
  • [Presentation] Growth of deep-UV (11-22) AlGaN quantum wells on m-plane (1-100) sapphire substrates2016

    • Author(s)
      T. Matsumoto, I. Oshima, N. Maeda, M. Jo, N. Kamata and H. Hirayama
    • Organizer
      International Workshop on Nitride Semiconductors 2016 (IWN2016)
    • Place of Presentation
      Orland, USA.
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05733
  • [Presentation] Two Wavelength Excited Photoluminescence in K2SiF6:Mn4+ Phosphor2016

    • Author(s)
      Y. Kotsuka, T. Fukuda, Z. Honda, N. Kamata, M. Kaneyoshi
    • Organizer
      Int. Symp. on the Science and Technology of Lighting (LS-15)
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2016-05-22
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] Approaches towards realizing Deep-UV Laser Diodes (LDs) by controlling p-AlGaN Layers2016

    • Author(s)
      T. Matsumoto, N. Maeda, M. Jo, N. Kamata and H. Hirayama
    • Organizer
      RAPAC2016
    • Place of Presentation
      ヒルトン東京(東京都新宿区)
    • Year and Date
      2016-08-02
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] Below-gap radiative and nonradiative channels in undoped GaN epilayers -Growth temperature dependence of buffer layer2016

    • Author(s)
      M. Julkarnain, N. Kamata, T. Fukuda and Y. Arakawa
    • Organizer
      Int. Symp. on the Science and Technology of Lighting (LS-15)
    • Place of Presentation
      Kyoto, Japan
    • Year and Date
      2016-05-22
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] AlGaN系深紫外LD実現へ向けた試み2016

    • Author(s)
      松本卓磨, 大島一晟, 前田哲利, 定昌史, 鎌田憲彦, 平山秀樹
    • Organizer
      第5回結晶工学未来塾
    • Place of Presentation
      東京農工大学(東京都府中市)
    • Year and Date
      2016-11-07
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] UVC-LDエピ構造への高密度電流注入の試み2016

    • Author(s)
      松本卓磨、大島一晟、前田哲利、定昌史、鎌田憲彦、平山秀樹
    • Organizer
      第77回応用物理学会秋季学術講演会
    • Place of Presentation
      朱鷺メッセ(新潟県新潟市)
    • Year and Date
      2016-09-13
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] Realization of Over 10 % EQE AlGaN Deep-UV LED by using Transparent p-AlGaN Contact Layer2016

    • Author(s)
      H. Hirayama, T. Takano, J. Sakai, T. Mino, K. Tsubaki, N. Maeda, M. Jo, Y. Kanazawa, I. Ohshima, T. Matsumoto, and N. Kamata
    • Organizer
      The 25th International Semiconductor Laser Conference (ISLC2016)
    • Place of Presentation
      神戸マリンパークオリエンタルホテル(兵庫県神戸市)
    • Year and Date
      2016-09-12
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] m面サファイア基板上半極性AlGaN/AlN層の結晶成長とドーピング及び量子井戸発光特性2016

    • Author(s)
      大島一晟,定昌史,前田哲利,鎌田憲彦,平山秀樹
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学大岡山キャンパス(東京都目黒区)
    • Year and Date
      2016-03-21
    • Data Source
      KAKENHI-PROJECT-15H05733
  • [Presentation] m面サファイア基板上半導性AlGaN/AlNの結晶成長と量子井戸発光特性2016

    • Author(s)
      大島一晟,定昌史,前田哲利,鎌田憲彦,平山秀樹
    • Organizer
      電子情報通信学会 レーザエレクトロニクス研究会
    • Place of Presentation
      京都大学桂キャンパス(京都府京都市)
    • Year and Date
      2016-12-13
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] 半極性結晶を用いたUVC-LEDへの進展2016

    • Author(s)
      大島一晟,定昌史,前田哲利,鎌田憲彦,平山秀樹
    • Organizer
      第5回結晶工学未来塾
    • Place of Presentation
      東京農工大学(東京都府中市)
    • Year and Date
      2016-11-07
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] Non-radiative Recombination Centers in AlGaN Quantum Well Characterized by Two-Wavelength Excited Photoluminescence2016

    • Author(s)
      M. Julkarnain, T. Fukuda, N. Kamata and H. Hirayama
    • Organizer
      Int. Symp. on Compound Semiconductors 2016
    • Place of Presentation
      Toyama, Japan
    • Year and Date
      2016-06-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] 半極性AlN基板を用いた高効率LEDの開発2016

    • Author(s)
      大島一晟,定昌史,前田哲利,鎌田憲彦,平山秀樹
    • Organizer
      第4回「光量子工学研究 - 若手・中堅研究者から見た光量子工学の展開 -」
    • Place of Presentation
      理研和光地区
    • Year and Date
      2016-11-01
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] 半極性AlN基板を用いた高効率LEDの開発2016

    • Author(s)
      大島一晟,定昌史,前田哲利,鎌田憲彦,平山秀樹
    • Organizer
      第4回「光量子工学研究-若手・中堅研究者から見た光量子工学の展開-」
    • Place of Presentation
      理化学研究所(埼玉県和光市)
    • Year and Date
      2016-11-01
    • Data Source
      KAKENHI-PROJECT-15H05733
  • [Presentation] Growth of deep-UV (11-22) AlGaN quantum wells on m-plane (1-100) sapphire substrates2016

    • Author(s)
      T. Matsumoto, I. Oshima, N. Maeda, M. Jo, N. Kamata and H. Hirayama
    • Organizer
      International Workshop on Nitride Semiconductors 2016 (IWN2016)
    • Place of Presentation
      Orland, USA.
    • Year and Date
      2016-10-02
    • Int'l Joint Research
    • Data Source
      KAKENHI-PLANNED-16H06420
  • [Presentation] Optical Characterization of Carrier Recombination Processes in GaPN by Two-Wavelength Excited Photoluminescence2016

    • Author(s)
      M. Suetsugu, *N. Kamata, S. Yagi, H. Yaguchi, T. Fukuda, F. Karlsson and Per-Olof Holtz
    • Organizer
      Int. Symp. on Compound Semiconductors 2016
    • Place of Presentation
      Toyama, Japan
    • Year and Date
      2016-06-26
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] ウェットエッチングによるサファイア表面加工基板(PSS)を用いた深紫外LED用高品質AlNテンプレートの作製2015

    • Author(s)
      金沢 裕也、豊田 史朗、大島 一晟、鎌田 憲彦、鹿嶋 行雄、松浦 恵里子、嶋谷 聡、小久保 光典、田代 貴晴、大川 貴史、上村 隆一郎、長田 大和、平山 秀樹
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      12p-B1-5, 東海大学
    • Year and Date
      2015-03-12
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] サファイア加工基板上AlNの結晶成長とそれを用いた深紫外LEDの実現2015

    • Author(s)
      金沢裕也,松本卓磨,鎌田憲彦,前田哲利,定昌史,平山秀樹
    • Organizer
      理研シンポジウム第3回「光量子工学研究」
    • Place of Presentation
      理化学研究所和光地区(埼玉県和光市)
    • Year and Date
      2015-11-12
    • Data Source
      KAKENHI-PROJECT-15H05733
  • [Presentation] 特異構造結晶の導入による高効率深紫外デバイスとTHz-QCLの開発2015

    • Author(s)
      平山 秀樹、前田 哲利、定 昌史、寺嶋 亘、豊田 史朗、鎌田 憲彦
    • Organizer
      第62回応用物理学会春季学術講演会(シンポジウム講演)
    • Place of Presentation
      14p-B1-6, 東海大学
    • Year and Date
      2015-03-14
    • Invited
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] 無極性m面サファイア上AlGaN/AlNの結晶成長と深紫外発行特性2015

    • Author(s)
      大島一晟,定昌史,前田哲利,鎌田憲彦,平山秀樹
    • Organizer
      理研シンポジウム第3回「光量子工学研究」
    • Place of Presentation
      理化学研究所和光地区(埼玉県和光市)
    • Year and Date
      2015-11-12
    • Data Source
      KAKENHI-PROJECT-15H05733
  • [Presentation] High-quality AlN template for deep-UV LEDs grown on facet controlled patterned sapphire substrate (FC-PSS)2015

    • Author(s)
      Y. Kanazawa, H. Hirayama, N. Maeda, M. Jo, N. Kamata, Y. Kashima, E. Matsuura, S. Shimatani, M. Kokubo, T. Tashiro, T. Ohkawa, R. Kamimura and Y. Osada
    • Organizer
      ISGN-6
    • Place of Presentation
      アクトシティ浜松(静岡県浜松市)
    • Year and Date
      2015-11-11
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05733
  • [Presentation] Growth and optical properties of semi-polar AlN/AlGaN layers grown on m-plane sapphire substrates2015

    • Author(s)
      I. Ohshima, M. Jo, N. Maeda, N. Kamata and H. Hirayama
    • Organizer
      ISGN-6
    • Place of Presentation
      アクトシティ浜松(静岡県浜松市)
    • Year and Date
      2015-11-11
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05733
  • [Presentation] Below-gap recombination channels in GaN revealed by two-wavelength excited photoluminescence2015

    • Author(s)
      M. Julkarnain, T. Fukuda, N. Kamata and Y. Arakawa
    • Organizer
      Int. Conf. on Defects in Semiconductors (ICDS-2015)
    • Place of Presentation
      Espoo, Finland
    • Year and Date
      2015-07-27
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] m 面サファイア基板上半極性AlN/AlGaN 層の結晶成長と光学特性2015

    • Author(s)
      大島一晟,定昌史,前田哲利,鎌田憲彦,平山秀樹
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県名古屋市)
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15H05733
  • [Presentation] Optical study on solution-processed organic thin films of energy donor-acceptor pair molecules2015

    • Author(s)
      N. Kamata, T. Ohtake, Y. Ishimaru and T. Fukuda
    • Organizer
      Int. Conf. on Defects in Semiconductors (ICDS-2015)
    • Place of Presentation
      Beijing, China
    • Year and Date
      2015-07-27
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] Terahertz Qunatum-Cascade Laser based on III-nitride Semiconductors2015

    • Author(s)
      H. Hirayama, W. Terashima, S. Toyoda and N. Kamata
    • Organizer
      Int. Symp. on Growth of III-Nitrides (ISGN-6)
    • Place of Presentation
      Nagoya, Japan
    • Year and Date
      2015-11-08
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] Progress of THz Quantum Cascade Laser Using Nitride Semiconductor2015

    • Author(s)
      H. Hirayama, W. Terashima, S. Toyoda and N. Kamata
    • Organizer
      Int. Conf. on Nitride Semiconductors (ICNS 2015)
    • Place of Presentation
      Beijing, China
    • Year and Date
      2015-08-30
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] Below-Gap Emission Bands in Undoped GaN and Its Excitation Density Dependence2015

    • Author(s)
      M. Julkarnain, T. Fukuda, N. Kamata and Y. Arakawa
    • Organizer
      Int. Conf. on Nitride Semiconductors (ICNS 2015)
    • Place of Presentation
      Beijing, China
    • Year and Date
      2015-08-30
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] ファセット表面加工基板上に成長した深紫外LED 用高品質AlN テンプレート2015

    • Author(s)
      金沢裕也,平山秀樹,前田哲利,定昌史,鎌田憲彦,鹿嶋行雄,松浦恵里子,嶋谷聡,小久保光典,田代貴晴,大川貴史,上村隆一郎,長田大和
    • Organizer
      第76回応用物理学会秋季学術講演会
    • Place of Presentation
      名古屋国際会議場(愛知県名古屋市)
    • Year and Date
      2015-09-13
    • Data Source
      KAKENHI-PROJECT-15H05733
  • [Presentation] Photoluminescence Characterization of Nonradiative Recombination Centers in Light Emitting Materials by Utilizing Below-Gap Excitation, : A Mini Review of Two-Wavelength Excited Photolumineascemce2015

    • Author(s)
      N. Kamata and A. Z. M. T. Islam
    • Organizer
      ICMEIE-2015
    • Place of Presentation
      Rajshahi,Bangladesh
    • Year and Date
      2015-06-05
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] m面サファイア上AlGaN/AlNの結晶成長と光学特性2015

    • Author(s)
      大島一晟,定昌史,前田哲利,鎌田憲彦,平山秀樹
    • Organizer
      電子情報通信学会レーザ・量子エレクトロニクス研究会
    • Place of Presentation
      大阪市立大学(大阪府大阪市)
    • Year and Date
      2015-11-27
    • Data Source
      KAKENHI-PROJECT-15H05733
  • [Presentation] Trap centers and photostimulated-luminescence in Ba3Si6O12N2:Eu2+ phosphor revealed by below-gap excitation2015

    • Author(s)
      ・T. Li, Y. Kotsuka, N. Kamata, T. Fukuda, Z. Honda and T. Kurushima
    • Organizer
      Int. Conf. on Defects in Semiconductors (ICDS-2015)
    • Place of Presentation
      Espoo, Finland
    • Year and Date
      2015-07-27
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] Progress of GaN-based THz Quantum Cascade Lasers2015

    • Author(s)
      H. Hirayama, W. Terashima, S. Toyoda and N. Kamata
    • Organizer
      Asian Pacific Workshop on Nitride Semiconductors (APWS 2015)
    • Place of Presentation
      Seoul, Korea
    • Year and Date
      2015-05-17
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] THz quantum cascade lasers using nitride semiconductors2015

    • Author(s)
      H. Hirayama, W. Terashima, S. Toyoda and N. Kamata
    • Organizer
      VI Workshop on Physics and Technologies of Semiconductor Lasers
    • Place of Presentation
      Krakow, Poland
    • Year and Date
      2015-10-12
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05733
  • [Presentation] Ba3Si6O12N2:Eu2+蛍光体の2波長励起PL測定ーAGEの前照射時間依存性2015

    • Author(s)
      高塚 洋右、李 延延、福田 武司、本多 善太郎、来島 友幸、鎌田 憲彦
    • Organizer
      第62回応用物理学会春季学術講演会
    • Place of Presentation
      11a-A25-4, 東海大学
    • Year and Date
      2015-03-11
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] Nonradiative recombination pathway via the intermediate band in GaP1-xNx studied by below-gap excitation2015

    • Author(s)
      ・M. Suetsugu, M. Eriksson, K. F. Karlsson, P. O. Holtz, N. Kamata, S. Yagi and H.Yaguchi
    • Organizer
      Int. Conf. on Defects in Semiconductors (ICDS-2015)
    • Place of Presentation
      Espoo, Finland
    • Year and Date
      2015-07-27
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] AlGaN系深紫外LED高効率化の進展と展望2015

    • Author(s)
      平山秀樹,前田哲利,定昌史,鎌田憲彦
    • Organizer
      第143回結晶工学分科会研究会
    • Place of Presentation
      東京都市大学(東京都世田谷区)
    • Year and Date
      2015-06-05
    • Invited
    • Data Source
      KAKENHI-PROJECT-15H05733
  • [Presentation] Precise Growth Control for AlGaN/GaN Superlattices by MBE and MOCVD for Developing GaN-based THz Quantum Cascade Lasers2015

    • Author(s)
      H. Hirayama, W. Terashima, S. Toyoda and N. Kamata
    • Organizer
      Energy Materials and Nanotechnology Collaborative Conference on Crystal Growth (EMN3CG) 2015
    • Place of Presentation
      Hong Kong, China
    • Year and Date
      2015-12-14
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] THz Quantum Cascade Lasers using Nitirde Semiconductors2015

    • Author(s)
      H. Hirayama, W. Terashima, S. Toyoda and N. Kamata
    • Organizer
      Workshop on Physics and Technologies of Semiconductor Lasers
    • Place of Presentation
      Krakow, Poland
    • Year and Date
      2015-10-11
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] Terahertz quantum-cascade laser based on III-nitride semiconductors2015

    • Author(s)
      H. Hirayama and W. Terashima, S. Toyoda and N. Kamata
    • Organizer
      ISGN-6
    • Place of Presentation
      アクトシティ浜松(静岡県浜松市)
    • Year and Date
      2015-11-12
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-15H05733
  • [Presentation] 二波長励起PL法によるBa3Si6O12N2:Eu2+の非発光再結合準位評価2014

    • Author(s)
      李廷廷,福田武司,本多善太郎,鎌田憲彦,来島友幸
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      18p-PB8-8,北海道大学
    • Year and Date
      2014-09-18
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] MOCVDを用いたGaN系QCLの結晶成長と評価2014

    • Author(s)
      豊田史朗,寺嶋亘,鎌田憲彦,平山秀樹
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Presentation] 二波長PL測定によるGaPN混晶の中間バンドの観測2014

    • Author(s)
      末次麻希子,トウヒドルイスラム,村越尚輝,花岡司,鎌田憲彦,矢口裕之
    • Organizer
      第61回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Presentation] エネルギードナー・アクセプター発光による有機薄膜中の分子凝集の評価2014

    • Author(s)
      大竹隆明,鎌田憲彦,福田武司
    • Organizer
      第75回応用物理学会秋季学術講演会
    • Place of Presentation
      17a-PA1-7,北海道大学
    • Year and Date
      2014-09-17
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] Optical Detection of Nonradiative Recombination Centers in AlGaN Quantum Wells for Deep UV Region2013

    • Author(s)
      A. Z. M. Touhidul Islam, N. Murakoshi, T. Fukuda, H. Hirayama and N. Kamata
    • Organizer
      10th Int.ernational Conference on Nitride Semiconductors 2013
    • Place of Presentation
      Washington DC, USA
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] Directing a Spotlight on to Nonradiative Recombintion Centers2013

    • Author(s)
      N. Kamata
    • Organizer
      Special Lecture Series
    • Place of Presentation
      国立台湾大学
    • Invited
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Presentation] 二波長励起PL 法を用いたInAlGaNの非発光再結合準位評価2013

    • Author(s)
      村越尚樹,イスラム トウヒドル,福田武司,鎌田憲彦,平山秀樹
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Presentation] Optical Detection of Nonradiative Recombination Centers in AlGaN Quantum Wells for Deep UV Region2013

    • Author(s)
      A. Z. M. Touhidul Islam, N. Murakoshi, T. Fukuda, H. Hirayama and N. Kamata
    • Organizer
      10th International Conference on Nitride Semiconductors
    • Place of Presentation
      Wsshington.DC, USA
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Presentation] Directing a Spotlight on to Nonradiative Recombination Centers2013

    • Author(s)
      N. Kamata
    • Organizer
      Special Lecture Series
    • Place of Presentation
      国立台湾大学
    • Invited
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] 二波長励起PL 法を用いたInAlGaNの非発光再結合準位評価2013

    • Author(s)
      村越尚樹,イスラム トウヒドル,福田武司,鎌田憲彦,平山秀樹
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] 深紫外LED用結合ピラーAINバッファーの改善2013

    • Author(s)
      豊田史朗,水澤克哉,鎌田憲彦,平山秀樹
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Presentation] 深紫外LEDバッファー用結合ピラーAINの結晶成長技術の開拓2012

    • Author(s)
      平山秀樹、富田優志、藤川紗千恵、豊田史朗、鎌田憲彦
    • Organizer
      第5回公開シンポジウム 光・光量子科学技術の新展開
    • Place of Presentation
      富士ソフトアキバプラザ(東京)
    • Year and Date
      2012-11-23
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Presentation] Optical Characterization of Non-Radiative Recombination Centers in InGaAs/AlGaAs Quantum Wells by Below-Gap Excitation2012

    • Author(s)
      A. Z. M. Touhidul Islam, K. Hatta, N. Murakoshi, T. Fukuda, T. Takada, T. Itatani and N. Kamata
    • Organizer
      The 13^<th> Int. Symp. on Science and Technology of Lighting (LS-13)
    • Place of Presentation
      Troy, NY, USA
    • Year and Date
      2012-06-26
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Presentation] AlGaN 系深紫外LEDの高効率化への取り組み2012

    • Author(s)
      富田優志、平山秀樹、藤川紗千恵、水澤克哉、豊田史朗、鎌田憲彦
    • Organizer
      第5回公開シンポジウム 光・光量子科学技術の新展開
    • Place of Presentation
      富士ソフトアキバプラザ(東京)
    • Year and Date
      2012-11-23
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Presentation] High-Efficiency AlGaN-based Deep-UV LEDs Realized by Improving Injection and Light-Extraction Efficiency2012

    • Author(s)
      H. Hirayama, M. Akiba, Y. Tomita, S. Fujikawa and N. Kamata
    • Organizer
      The 13^<th> Int. Symp. on Science and Technology of Lighting (LS-13),
    • Place of Presentation
      Troy, NY, USA(招待講演)
    • Year and Date
      2012-06-26
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Presentation] 結合ピラーAINバッファーを用いた高効率深紫外LEDの検討2012

    • Author(s)
      平山秀樹、富田優志、藤川紗千恵、豊田史朗、鎌田憲彦
    • Organizer
      第5回公開シンポジウム 光・光量子科学技術の新展開
    • Place of Presentation
      富士ソフトアキバプラザ(東京)
    • Year and Date
      2012-11-23
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Presentation] 多重量子障壁を用いた230nm帯短波長・高効率深紫外LEDの実現2012

    • Author(s)
      平山秀樹、藤川紗千恵、鎌田憲彦
    • Organizer
      第5回公開シンポジウム 光・光量子科学技術の新展開
    • Place of Presentation
      富士ソフトアキバプラザ(東京)
    • Year and Date
      2012-11-23
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Presentation] 220-350mm帯AlGaN系深紫外LEDのこれまでの進展2012

    • Author(s)
      平山秀樹、藤川紗千恵、前田哲利、富田優志、水澤克哉、豊田史朗、鎌田憲彦
    • Organizer
      第5回公開シンポジウム 光・光量子科学技術の新展開
    • Place of Presentation
      富士ソフトアキバプラザ(東京)
    • Year and Date
      2012-11-23
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Presentation] Optical Characterization of Non-Radiative Centers and Improvement in Light Extraction Efficiency of Deep UV-LEDs2012

    • Author(s)
      N. Kamata, A. Z. M. Touhidul Islam, M. Akiba, K. Igarashi, N. Murakoshi, T. Fukuda and H. Hirayama
    • Organizer
      Proc. 5th Lighting Conf. of China, Japan and Korea
    • Place of Presentation
      東海大学高輪キャンパス(招待講演)
    • Year and Date
      2012-08-24
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Presentation] Optical Characterization with Below-Gap Excitation and Improvements on Deep-UV LEDs (Invited)2011

    • Author(s)
      N. Kamata
    • Organizer
      Asia Pacific Light Sources Workshop (APLSW) 2011
    • Place of Presentation
      Taipei, Taiwan
    • Year and Date
      2011-04-13
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] Reduction of Macro-Step Geometry and Abnormal Nuclei on AlN/Sapphire for use as Deep-UV LED Templates2011

    • Author(s)
      N.Maeda, H.Hirayama, M.Akiba, N.Kamata
    • Organizer
      9^<th> International Conference on Nitride Semiconductors (ICNS-9), PA1.18
    • Place of Presentation
      Glasgow, UK
    • Year and Date
      2011-07-12
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] Optical Characterization with Below Gap Excitation and Improvements on Deep-UV LEDs2011

    • Author(s)
      N.Kamata
    • Organizer
      Asia Pacific Light Sources Workshop (APLSW)2011
    • Place of Presentation
      Taipei, Taiwan(Invited)
    • Year and Date
      2011-04-13
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] Growth of Flat p-GaN Contact Layer by Pulse-Flow Method for High Light-Extraction AlGaN Deep-UV LEDs with Al Electrode2011

    • Author(s)
      M. Akiba, Y. Tomita, Y. Tsukada, H. Hirayama, N. Maeda, N. Kamata
    • Organizer
      Asian Pacific Workshop on Nitride Semiconductors (APWS2011)
    • Place of Presentation
      Toba, Mie, Japan
    • Year and Date
      2011-05-23
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] High-Efficiency Short-Wavelength AlGaN DUV LEDs Realized by Improving Injection Efficiency with MQB2011

    • Author(s)
      H. Hirayama, Y. Tsukada, M. Akiba, Y. Tomita, S. Fujikawa, N. Maeda, N. Kamata
    • Organizer
      Asian Pacific Workshop on Nitride Semiconductors (APWS2011)
    • Place of Presentation
      Toba, Mie, Japan
    • Year and Date
      2011-05-22
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] Reduction of Macro-Step Geometry and Abnormal Nuclei on AlN/Sapphire for use as Deep-UV LED Templates2011

    • Author(s)
      N. Maeda, H. Hirayama, M. Akiba, N. Kamata
    • Organizer
      9th Int. Conf. on Nitride Semiconductors (ICNS-9)
    • Place of Presentation
      Glasgow, UK
    • Year and Date
      2011-07-12
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] Growth of Flat and Thin p-GaN Contact Layer by NH3 Pulse-flow Method for High Light-Extraction AlGaN Deep-UV LEDs2011

    • Author(s)
      M.Akiba,Y.Tomita, H.Hirayama, Y.Tsukada, N.Maeda, N.Kamata
    • Organizer
      9^<th> International Conference on Nitride Semiconductors (ICNS-9), F5.2
    • Place of Presentation
      Glasgow, UK
    • Year and Date
      2011-07-10
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] Marked Increase of Injection Efficiency in AlGaN Deep-UV LEDs2011

    • Author(s)
      H. Hirayama, Y. Tsukada, M. Akiba, Y. Tomita, S. Fujikawa, N. Maeda, N. Kamata
    • Organizer
      9th International Conference on Nitride Semiconductors (ICNS-9)
    • Place of Presentation
      Glasgow, UK
    • Year and Date
      2011-07-10
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] Marked Increase of Injection Efficiency in AlGaN Deep-UV LEDs2011

    • Author(s)
      H.Hirayama, Y.Tsukada, M.Akiba, Y.Tomita, S.Fujikawa, N.Maeda, N.Kamata
    • Organizer
      9^<th> International Conference on Nitride Semiconductors (ICNS-9), F4.1
    • Place of Presentation
      Glasgow, UK
    • Year and Date
      2011-07-10
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] Ba_3Si_6O_<12>N_2:Eu^<2+>蛍光体のフォト-及び熱ルミネッセンス評価2011

    • Author(s)
      石岡亮、五十嵐航平、福田武司、木島直人、鎌田憲彦
    • Organizer
      発光型/非発光型ディスプレイ合同研究会
    • Place of Presentation
      高知工科大学
    • Year and Date
      2011-01-28
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] Growth of Flat p-GaN Contact Layer by Pulse-Flow Method for Hig Light-Extraction AlGaN Deep-UV LEDs with Al Electrode2011

    • Author(s)
      M.Akiba, Y.Tomita, Y.Tsukada, H.Hirayama, N.Maeda, N.Kamata
    • Organizer
      Asian Pacific Workshop on Nitride Semiconductors (APWS2011)
    • Place of Presentation
      Toba, Mie, Japan
    • Year and Date
      2011-05-23
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] 深紫外領域AlGaN系結晶のフォトルミネッセンス評価2011

    • Author(s)
      五十嵐航平、石岡亮、塚田悠介、福田武司、本多善太郎、平山秀樹、鎌田憲彦
    • Organizer
      発光型/非発光型ディスプレイ合同研究会
    • Place of Presentation
      高知工科大学
    • Year and Date
      2011-01-28
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] Growth of Flat and Thin p-GaN Contact Layer by NH3 Pulse-flow Method for High Light-Extraction AlGaN Deep-UV LEDs2011

    • Author(s)
      M. Akiba, Y. Tomita, H. Hirayama, Y. Tsukada, N. Maeda, N. Kamata
    • Organizer
      9th International Conference on Nitride Semiconductors (ICNS-9)
    • Place of Presentation
      Glasgow, UK
    • Year and Date
      2011-07-10
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] Progress of AlGaN-based Deep-UV LEDs using High-Quality AlN on Sapphire2010

    • Author(s)
      H. Hirayama, Y. Tsukada, N. Kamata
    • Organizer
      22th Int. Semiconductor Laser Conf.(ISLC2010)
    • Place of Presentation
      Kyoto
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] AlGaN Deep-UV LEDs using Multiquantum-Barrier2010

    • Author(s)
      H. Hirayama, Y. Tsukada, N. Maeda, N. Kamata
    • Organizer
      The 8th Int. Symp. on Semiconductor Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      Beijing China
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] High-Power Short-Wavelength AlGaN Deep-UV LEDs Realized by Improving Injection Efficiency2010

    • Author(s)
      H. Hirayama, Y. Tsukada, M. Akiba, N. Maeda, N. Kamata
    • Organizer
      Int. Workshop on Nitride Semicond.(IWN2010)
    • Place of Presentation
      Tampa, Florida, USA
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] High-Power Short-Wavelength AlGaN Deep-UV LEDs Realized by Improving Injection Efficiency2010

    • Author(s)
      H.Hirayama, Y.Tsukada, M.Akiba, N.Maeda, N.Kamata
    • Organizer
      International Workshop on Nitride Semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida, USA
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] Efficiency Enhance-ment in 250 nm-band AlGaN Deep-UV LEDs using Multiquantum-Barrier2010

    • Author(s)
      H. Hirayama, Y. Tsukada, N. Maeda, N. Kamata
    • Organizer
      The 3rd Int. Symp. on Growth of III-Nitrides (ISGN-3)
    • Place of Presentation
      Montpellier, France
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] Efficiency Enhancement in AlGaN Deep-UV LEDs using High-Reflectivity Al-based p-type Electrode(IWN2010ベストポスター賞)2010

    • Author(s)
      M. Akiba, H. Hirayama, Y. Tsukada, N. Maeda, N. Kamata
    • Organizer
      Int. Workshop on Nitride Semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida, USA
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] 247-262 nm A1GaN Deep-UVLEDs using Multiquantum-Barrier2010

    • Author(s)
      H.Hirayama, Y.Tsukada, N.Maeda, N.Kamata
    • Organizer
      The 8^<th> International Symposium on Semiconduc tors Light Emitting Devices (ISSLED2010), E3
    • Place of Presentation
      Beijing China
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] Efficiency Enhancement in AlGaN Deep-UV LEDs using High-Refle ctivity Al-based p-type Electrode (IWN2010ベストポスター賞受賞)2010

    • Author(s)
      M.Akiba, H.Hirayama, Y.Tsukada N.Maeda, N.Kamata
    • Organizer
      International Workshop on Nitride Semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida, USA
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] Efficiency Enhancement in 250 nm-band AlGaN Deep-UV LEDs using Multiquantum-Barrier2010

    • Author(s)
      H.Hirayama, Y.Tsukada, N.Maeda, N.Kamata
    • Organizer
      The 3^<rd> International Symposium on Growth of III-Nitrides (ISGN-3)
    • Place of Presentation
      Montpellier, France
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] Energy distribution of below-gap states in InGaN quantum wells revealed by two-wavelength excited photoluminescence2010

    • Author(s)
      N. Kamata, T. Yamaguchi, T. Fukuda, Y. Arakawa
    • Organizer
      Proc. 12th Int. Symp. on the Science and Technology of Light Sources and Int. Conf. on White LEDs and Solid State Lighting (LS-WLED2010)
    • Place of Presentation
      Eindhoven, Netherland
    • Year and Date
      2010-07-12
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] Design of Multiquantum-barrier Electron-Blocking Layer for 230-280 nm-band AlGaN Deep-UV LEDs2010

    • Author(s)
      Y.Tsukada, H.Hirayama, N.Kamata
    • Organizer
      The 8^<th> International Symposium on Semiconduc tors Light Emitting Devices (ISSLED2010),I5
    • Place of Presentation
      Beijing China
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] Marked Efficiency Enhancement of AlGaN-based Deep-UV LEDs using Multiquantum-Barrier2010

    • Author(s)
      Y. Tsukada, H. Hirayama, N. Kamata
    • Organizer
      22th Int. Semiconductor Laser Conf.(ISLC2010)
    • Place of Presentation
      Kyoto
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] Optimization of Multiquantum-barrier (MQB) Structure of AlGaN Deep-UV LEDs for Realizing High Injection Efficiency2010

    • Author(s)
      Y.Tsukada, H.Hirayama, N.Kamata
    • Organizer
      International Workshop on Nitride Semiconductors (IWN2010)
    • Place of Presentation
      Tampa, Florida, USA
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] Design of Multiquantum-barrier Electron-Blocking Layer for 230-280 nm-band AlGaN Deep-UV LEDs2010

    • Author(s)
      Y. Tsukada, H. Hirayama, N. Kamata
    • Organizer
      The 8th Int. Symp. on Semiconductor Light Emitting Devices (ISSLED2010)
    • Place of Presentation
      Beijing China
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] Energy distribution of below-gap states in InGaN quantum wells revealed by two-wavelength excited photoluminescence2010

    • Author(s)
      N.Kamata, T.Yamaguchi, T.Fukuda, Y.Arakawa
    • Organizer
      Proc.12^<th> Int.Symp.on the Science and Technology of Light Sources and the 3^<rd> Int.Conf.on White LEDs and Solid State Lighting (LS-WLED2010), CP020
    • Place of Presentation
      Eindhoven, Netherland
    • Year and Date
      2010-07-12
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] Progress of AIGaN-based Deep-UV LEDs using High-Quality AIN on Sapphire2010

    • Author(s)
      H.Hirayama, Y.Tsukada, N.Kamata
    • Organizer
      22th International Semiconductor Laser Conference (ISLC2010)
    • Place of Presentation
      Kyoto
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] Marked Efficiency Enhancement of AlGaN-based Deep-UV LEDs using Multiquantum-Barrier2010

    • Author(s)
      Y.Tsukada, H.Hirayama, N.Kamata
    • Organizer
      22th International Semiconductor Laser Conference (ISLC2010)
    • Place of Presentation
      Kyoto
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] Optical Detection of Nonradiative Centers in GaN-Based Crystals by Photoluminescence with Below-Gap Excitation2009

    • Author(s)
      N. Kamata, T. Yamaguchi, T. Fukuda, Y. Arakawa
    • Organizer
      The 2nd Int. Conf. on White LEDs and Solid State Lighting
    • Place of Presentation
      Taipei (Taiwan)
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] 240nm AlGaN-LEDのCW1.2mW出力動作2009

    • Author(s)
      乗松潤、平山秀樹、塚田悠介、鎌田憲彦
    • Organizer
      第70回応用物理学会学術講演会、11p-X-3
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-11
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] Siドーピングによる250nm帯InドープAlGaN量子井戸LED高効率化の検討2009

    • Author(s)
      塚田悠介、藤川紗千恵、平山秀樹、乗松潤、鎌田憲彦
    • Organizer
      第70回応用物理学会学術講演会、11p-X-2
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-11
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] 二波長励起PL法を用いたInGaAs-HEMT結晶の禁制帯内準位の測定-組織依存性-2009

    • Author(s)
      山口朋彦、五十嵐航平、福田武司、高田朋幸、板谷太郎、本多善太郎、鎌田憲彦
    • Organizer
      第70回応用物理学会学術講演会、10a-TC-3
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] Optical detection of nonradiative centers in GaN-based crystals by photoluminescence with below-gap excitation2009

    • Author(s)
      鎌田憲彦, 山口朋彦, 福田武司 Y.Arakawa
    • Organizer
      The 2^<nd> Int.Conf.on White LEDs and Solid State Lighting, MA1-6,(査読有)
    • Place of Presentation
      Taipei(Taiwan)
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] In混入AlGaNの発光およびp型特性と高効率深紫外LEDへの応用2009

    • Author(s)
      藤川紗千恵、塚田悠介、乗松潤、高野隆好、野口憲路、椿健治、鎌田憲彦
    • Organizer
      第70回応用物理学会学術講演会、9p-X-7
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-09
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] 二波長励起PL法を用いたInGaAs-HEMT結晶の禁制帯内準位の測定-組成依存性-2009

    • Author(s)
      山口朋彦, 五十嵐航平, 福田武司, 高田朋幸, 板谷太郎, 本多善太郎, 鎌田憲彦
    • Organizer
      第70回応用物理学会学術講演会
    • Place of Presentation
      富山大学
    • Year and Date
      2009-09-10
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] K1, 222-273 nm AlGaN Deep Ultraviolet Light-Emitting Diodes Fabricated on High-Quality AlN Buffer on Sapphire2008

    • Author(s)
      H. Hirayama, T. Yatabe, N. Noguchi, N. Kamata
    • Organizer
      International Symposium on Semiconductor Light Emitting Devices (ISSLED)
    • Place of Presentation
      Invited.
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] 248nm ALGaN深紫外LEDの室温CWミリワット出力動作鎌田憲彦、2008

    • Author(s)
      谷田部透、平山秀樹、野月憲路、乗松潤、鎌田憲彦て
    • Organizer
      応用物理学関係連合講演会 30a-B-10
    • Place of Presentation
      日大舟橋
    • Year and Date
      2008-03-30
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] 222nm AlGaN深紫外LKDのシングルピーク発光動作2008

    • Author(s)
      野口憲路、平山秀樹、谷田部透、鎌田憲彦
    • Organizer
      応用物理学関係連合講演会 30a-B-11
    • Place of Presentation
      日大舟橋
    • Year and Date
      2008-03-30
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] アンモニアパルス供給多層成長法を用いた深紫外LED用AINバッファーの進展2008

    • Author(s)
      平山秀樹、谷田部透、野口憲路、乗松潤、鎌田憲彦
    • Organizer
      応用物理学関係連合講演会 29p-B-8
    • Place of Presentation
      日大舟橋
    • Year and Date
      2008-03-29
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] 230-350nm窒化物深紫外LEDの進展と今後の展望2007

    • Author(s)
      平山 秀樹, 谷田 部透, 野口 憲路, 藤州 紗千恵, 高野 隆好, 鎌田 憲彦, 近藤 行廣
    • Organizer
      応用物理学会学術講演会「窒化物光半導体のフロンティア」シンポジウム(招待)5p-ZR-8
    • Place of Presentation
      北海道工大
    • Year and Date
      2007-09-05
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] Control of Polarity and Reduction of Threading Dislocations density (TDD) of AlN/AlGaN Buffer on Sapphire by Using TMAl Pulse Supply Method2007

    • Author(s)
      N. Noguchi, T. Ohashi, N. Kamata and H. Hirayama
    • Organizer
      Proc. Int. Conf. on Nitride Semicond., (MP75)
    • Place of Presentation
      Las Vegas
    • Year and Date
      2007-09-17
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] Remarkable Enhancement of 254-280 nm Deep UV Emission from AlGaN Quantum Wells by Using High-Quality AIN Buffer on Sapphire2007

    • Author(s)
      T. Yatabe, H. Hirayama, T. Ohashi and N. Kamata
    • Organizer
      Proc. Int. Conf. on Nitride Semicond., WP92(査読有)
    • Place of Presentation
      Las Vegas (USA)
    • Year and Date
      2007-09-19
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] Remarkable-Enhancement of 254-288 nm Deep UV Emission from AlGaN Quantum Wells by Using High-Quality AIN Buffer on Sapphire2007

    • Author(s)
      T. Yatabe, N. Noguchi, N. Kamata and H. Hirayama
    • Organizer
      Proc. Int. Conf. on White LEDs and Solid State Lighting P29(査読有)
    • Place of Presentation
      東京
    • Year and Date
      2007-11-29
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] High-Quality AlN Buffer Fabricated on Sapphire by NH3 Pulse-Flow Multi-Layer Growth Method for Application to Deep UV-LEDs2007

    • Author(s)
      N. Noguchi, T. Yatabe, T. Ohashi, N. Kamata and H. Hirayama
    • Organizer
      Proc. Int. Conf. on White LEDs and Solid State Lighting, (P28)
    • Place of Presentation
      Tokyo
    • Year and Date
      2007-11-28
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] High-Quality AIN Buffer Fabrieated on Sapphire by NH3 Pulse-Flow Multi-Layer Growth Method for Apphication to Deep UV-LEDs,2007

    • Author(s)
      N. Noguchi, T. Yatabe, T, Ohashi N. Kamata and H.Hirayama
    • Organizer
      Proc.Int.Conf.on White LEDs and Solid State Lighting, P28(査読有)
    • Place of Presentation
      東京
    • Year and Date
      2007-11-28
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] アンモニアパルス供給多層成長法を用いた深紫外LED用ALNバッファーの進展2007

    • Author(s)
      平山 秀樹, 谷田 部透, 野口 憲路, 乗松 澗, 鎌田 憲彦
    • Organizer
      応用物理学関係連合講演会29p-B-8
    • Place of Presentation
      日大舟橋
    • Year and Date
      2007-03-29
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] 248nm AlGaN深紫外LEDの室温CWミリワット出力動作鎌田憲彦、2007

    • Author(s)
      谷田 部透, 平山 秀樹, 野口 憲路, 乗松 澗, 鎌田 憲彦
    • Organizer
      応用物理学関係連合講演会30a-B-10
    • Place of Presentation
      日大舟橋
    • Year and Date
      2007-03-30
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] High-Quality AIN Buffer Fabricated on Sapphire by NH3 Pulse-Flow Multi-Layer Growth Method for Application to Deep UV-LEDs2007

    • Author(s)
      N. Noguchi, T. Yatabe, T. Ohashi, N. Kamata and H. Hirayama
    • Organizer
      Proc. Int. Conf. on White LEDs and Solid State Lighting P28(査読有)
    • Place of Presentation
      東京
    • Year and Date
      2007-11-28
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] Laser-Induced Formation of Nonradiative Centers Observed by Two-Wavelength Excited Photoluminescence, 2007.10.15(Kyoto2007

    • Author(s)
      H. Ogawa, N. Uchiyama, N. Kamata and Y. Arakawa
    • Organizer
      Proc. Int. Symp.on Compound Semicond., MoE P4(査読有)
    • Place of Presentation
      京都
    • Year and Date
      2007-10-15
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] 231nm AlGaN量子井戸深紫外LEDのシングルピーク発光動作、2007

    • Author(s)
      野口 憲路, 谷田 部透, 鎌田 憲彦, 平山 秀樹
    • Organizer
      応用物理学会学術講演会8p-ZR-8
    • Place of Presentation
      北海道工大
    • Year and Date
      2007-09-08
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] 227-261 nm AlGaN-Based Deep Ultraviolet Light-Emitting-Diodes Fabricated on High-Quality AlN Buffer on Sapphire2007

    • Author(s)
      H. Hirayama, T. Yatabe, N. Noguchi and N. Kamata
    • Organizer
      Proc. Int. Conf. on White LEDs and Solid State Lighting, (Th-O-9)
    • Place of Presentation
      Tokyo
    • Year and Date
      2007-11-29
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] 高品質AlNバッファー層を用いた深紫外250nmシングルピーク発光LED2007

    • Author(s)
      大橋智昭、平山秀樹、谷田部透、鎌田憲彦
    • Organizer
      応用物理学関係連合講演会予稿集第1分冊
    • Place of Presentation
      青山学院大学(相模原キャンパス)
    • Year and Date
      2007-03-30
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] TMA1のパルス状供給による極性制御及びAlN/AlGaNテンプレートの高品質化2007

    • Author(s)
      野口憲路、大橋智昭、平山秀樹、鎌田憲彦
    • Organizer
      応用物理学関係連合講演会予稿集第1分冊
    • Place of Presentation
      青山学院大学(相模原キャンパス)
    • Year and Date
      2007-03-27
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] Development and Perspective of 230-350nm Nitride Deep-UV LEDs2007

    • Author(s)
      H. Hirayama, T. Yatabe, N. Noguchi, S. Fujikawa, T. Takano, N. Kamata and Y. Kondo
    • Organizer
      Conf. of Jpn. Soc. Applied Physics, Symp. on "Frontier of Nitride Semiconductors" , (5p-ZR-8)
    • Place of Presentation
      Invited, in Japanese
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] Laser-Induced Formation of Nonradiative Centers Observed by Two-Wavelength Excited Photoluminescence2007

    • Author(s)
      H. Ogawa, N. Uchiyama, N. Kamata and Y. Arakawa
    • Organizer
      Proc. Int. Symp. on Compound semiconductors, (MoE P4)
    • Place of Presentation
      Kyoto
    • Year and Date
      2007-10-15
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] Control of Polarity and Reduction of Threading Dislocations density (TDD) of AlN/AlGaN Buffer on Sapphire by Using TMA1 Pulse Supply Method2007

    • Author(s)
      N. Noguchi, T. Ohashi, N. Kamata and H. Hirayama
    • Organizer
      Proc. Int. Conf. on Nitride Semicond., MP75(査読有)
    • Place of Presentation
      Las Vegas (USA)
    • Year and Date
      2007-09-17
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] Remarkable-Enhancement of 254-288 nm Deep UV Emission from AlGaN Quantum Wells by Using High-Quality AlN Buffer on Sapphire2007

    • Author(s)
      T. Yatabe, N. Noguchi, N. Kamata and H. Hirayama
    • Organizer
      Proc. Int. Conf. on White LEDs and Solid State Lighting, (P29)
    • Place of Presentation
      Tokyo
    • Year and Date
      2007-11-29
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] 245-250 nm AIGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on High-Quality AIN Buffer on Sapphire2007

    • Author(s)
      H. Hirayama, T. Ohashi, T. Yatabe and N. Kamata
    • Organizer
      Proc.Int.Conf.on Nitride Semicond., ThP29(査読有)
    • Place of Presentation
      Las Vegas(USA)
    • Year and Date
      2007-09-20
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] Remarkable-Enhancement of 254-288 nm Deo UV Emission from AlGaN Quantum Wells by Using High Quality AIN Buffer on Sapphire2007

    • Author(s)
      T. Yatabe, N. Noguchi, N. Kamata and H. Hirayama
    • Organizer
      proc, Int, Conf, in White LEDs and Solid State Lighting, P29(査読有)
    • Place of Presentation
      東京
    • Year and Date
      2007-11-28
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] High-Quality AIN Buffer Fabricated on Sapphire by NH3 Pulse Flow Multi-Layer Growth Method for Application to Deep UTV-LEDs2007

    • Author(s)
      H. Hirayama, T. Ohashi and N. Kamata
    • Organizer
      Proc. Int. Conf. on Nitride Semicond., M2(査読有)
    • Place of Presentation
      Las Vegas (USA)
    • Year and Date
      2007-09-18
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] NH_3交互供給法による紫外LED用高品質AlNバッファー層の実現2007

    • Author(s)
      大橋智昭、平山秀樹、谷田部透、鎌田憲彦
    • Organizer
      応用物理学関係連合講演会予稿集第1分冊
    • Place of Presentation
      青山学院大学(相模原キャンパス)
    • Year and Date
      2007-03-27
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] Control of Polarity and Reduction of Threading Disslocations density (TDD) of AIN/AIGaN Buffer on Sapphire by Using TMAI Pulse Supply Method2007

    • Author(s)
      N. Noguchi, T. Ohashi, N. Kamata and H.Hirayama
    • Organizer
      Proc.Int.Conf.on Nitride Semicond., MP75(査読有)
    • Place of Presentation
      Las Vegas(USA)
    • Year and Date
      2007-09-17
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] High-Quality AIN Buffer Fabricated on Sapphire by NH3 Pulse Flow Multi-Layer Growth Method for Application to Deep UV-LEDs2007

    • Author(s)
      H. Hirayama, T. Ohashi and N. Kamata
    • Organizer
      Proc.Int.Cokf.on Nitride Semicond., M2(査読有)
    • Place of Presentation
      Las Vegas(USA)
    • Year and Date
      2007-09-18
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] 230-350nm窒化物深紫外LEDの進展と今後の展望2007

    • Author(s)
      平山秀樹、谷田部透、野口憲路、藤川紗千恵、高野隆好、鎌田憲彦、近藤行廣
    • Organizer
      応用物理学会学術講演会 「窒化物光半導体のフロンティア」シンポジウム(招待) 5p-ZR-8
    • Place of Presentation
      北海道工大
    • Year and Date
      2007-09-05
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] High-Quality AlN Buffer Fabricated on Sapphire by NH3 Pulse Flow Multi-Layer Growth Method for Application to Deep UV-LEDs2007

    • Author(s)
      H. Hirayama, T. Ohashi and N. Kamata
    • Organizer
      Proc. Int. Conf. on Nitride Semicond., (M2)
    • Place of Presentation
      Las Vegas
    • Year and Date
      2007-09-18
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] 250-280nm深紫外LEDに向けた高内部量子効率AlGaN量子井戸の実現2007

    • Author(s)
      平山秀樹、大橋智昭、谷田部透、鎌田憲彦
    • Organizer
      応用物理学関係連合講演会予稿集第1分冊
    • Place of Presentation
      青山学院大学(相模原キャンパス)
    • Year and Date
      2007-03-30
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] 261nm AlGaN量子井戸深紫外LEDのCWミリワット動作、2007

    • Author(s)
      谷田 部透, 野口 憲路, 鎌田 憲彦, 平由 秀樹
    • Organizer
      応用物理学会学術誰演会8p-ZR-7
    • Place of Presentation
      北海道工大
    • Year and Date
      2007-09-08
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] AlNバッファー高品質化によるAlGaN量子井戸深紫外発光の飛躍的高効率化2007

    • Author(s)
      谷田部透、大橋智昭、平山秀樹、野口憲路、鎌田憲彦
    • Organizer
      応用物理学関係連合講演会予稿集第1分冊
    • Place of Presentation
      青山学院大学(相模原キャンパス)
    • Year and Date
      2007-03-27
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] 222nm AlGaN深紫外LEDのシングルピーク発光動作2007

    • Author(s)
      野口 憲路, 平由 秀樹, 谷田 部透, 鎌田 憲彦
    • Organizer
      応用物理学関係連合講演会30a-B-11
    • Place of Presentation
      日大舟橋
    • Year and Date
      2007-03-30
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] 245-250 nm AIGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on High-Quality AIN Buffer on Sapphire2007

    • Author(s)
      H. Hirayama, T. Ohashi, T. Yatabe and N.Kamata
    • Organizer
      Proc. Int. Conf. on Nitride Semicond., ThP29(査読有)
    • Place of Presentation
      Las Vegas (USA)
    • Year and Date
      2007-09-20
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] Remarkable Enhancement of 254-280 nm Deep UV Emission from AIGa N Quantum Wbls by Using High-Quality AIN Buffer on Sapphire2007

    • Author(s)
      T. Yatabe, H. HLirayama, T. Ohashi and N. Kamata
    • Organizer
      Proc.Int.Conf.on Nitride Semicond., WP92(査読有)
    • Place of Presentation
      Las Vegas(USA)
    • Year and Date
      2007-09-19
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] 245-250nm AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on High-Quality AlN Buffer on Sapphire2007

    • Author(s)
      H. Hirayama, T. Ohashi, T. Yatabe and N. Kamata
    • Organizer
      Proc. Int. Conf. on Nitride Semicond., (ThP29)
    • Place of Presentation
      Las Vegas
    • Year and Date
      2007-09-20
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] 231nm AlGaN量子井戸深紫外LEDのシングルピーク発光動作、2007

    • Author(s)
      野口憲路、谷田部透、鎌田簿彦、平山秀樹
    • Organizer
      応用物理学会学術講演会 8p-ZR-8
    • Place of Presentation
      北海道工大
    • Year and Date
      2007-09-08
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] Remarkable-Enhancement of 254-280 nm Deep UV Emission from AlGaN Quantum Wells by Using High-Quality AlN Buffer on Sapphire2007

    • Author(s)
      T. Yatabe, N. Noguchi, N. Kamata and H. Hirayama
    • Organizer
      Proc. Int. Conf. on Nitride Semicond., (WP92)
    • Place of Presentation
      Las Vegas
    • Year and Date
      2007-09-19
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] 227-261 nm AlGaN-Based Deep Ultraviolet Light-Emitting-Diodes Fabricated on High-Quality AIN Buffer on Sapphire2007

    • Author(s)
      H. Hirayama, T. Yatabe, T. Ohashi and N. Kamata
    • Organizer
      Proc. Int. Conf. on White LEDs and Solid State Lighting(査読有)
    • Place of Presentation
      東京
    • Year and Date
      2007-11-29
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] 261nm AlGaN量子井戸深紫外LEDのCWミリワット動作、2007

    • Author(s)
      谷田部透、野口憲路、鎌田憲彦、平山秀樹
    • Organizer
      応用物理学会学術講演会 8p-ZR-7
    • Place of Presentation
      北海道工大
    • Year and Date
      2007-09-08
    • Description
      「研究成果報告書概要(和文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] Laser-Induced Formation of Nonradiative Centers Observed by Two-Wavelength Excited Photoluminescence,2007.10.15(Klyoto2007

    • Author(s)
      H. Ogawa, N. Uchiyama, N. Kamata and Y. Arakawa
    • Organizer
      proc.Int.Symp.on Compound Semicond., MoE P4(査読有)
    • Place of Presentation
      京都
    • Year and Date
      2007-10-15
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] Nonradiative centers in InAs quantum dots revealed by two-wavelength excited photoluminescence2005

    • Author(s)
      N. Kamata, S. Saravanan, J. M. Zanardi Ocampo, P. 0. Vaccaro, Y. Arakawa
    • Organizer
      23rd Int. Conf. on Defects in Semiconductors (ICDS-23)
    • Place of Presentation
      Awaj ThM2. 3C
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] Remarkable Increase of Deep UV Emission from Quaternary InAlGaN by Reducing Oxygen and Carbon Impurities2005

    • Author(s)
      T. Ohashi, H. Hirayama, K. Ishibashi and N. Kamata
    • Organizer
      Materials Research Society (MRS) Fall Meeting 2005, (FF3. 2)
    • Place of Presentation
      Boston, USA
    • Description
      「研究成果報告書概要(欧文)」より
    • Data Source
      KAKENHI-PROJECT-17360006
  • [Presentation] Nonradiative Recombination Process in AlGaN Quantum Well and Its Excitation Density Dependence

    • Author(s)
      M. Julkarnain, A. Z. M. Touhidul Islam, T. Fukuda, N. Kamata, and H. Hirayama
    • Organizer
      Int. Symp. on the Science and Technology of Lighting, (LS14)
    • Place of Presentation
      Como, Italy
    • Year and Date
      2014-06-22 – 2014-06-27
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] Optical Characterization of Non-Radiative Recombination Centers in InGaAs/AlGaAs Quantum Wells by Below-Gap Excitation

    • Author(s)
      A. Z. M. Touhidul Islam, K. Hatta, N. Murakoshi, T. Fukuda, T. Takada, T. Itatani, N. Kamata
    • Organizer
      Int. Symp. on Science and Technology of Lighting
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] MOCVD Growth and Characterization of THz Quantum Cascade Structure

    • Author(s)
      S. Toyoda, W. Terashima, N. Kamata, H. Hirayama
    • Organizer
      Int. Workshop on Nitride Semiconductors (IWN2014)
    • Place of Presentation
      Wroclaw, Poland
    • Year and Date
      2014-08-24 – 2014-08-28
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] Dominant Nonradiative Centers in InGaN Single Quantum Well by Time-Resolved and Two-Wavelength Excited Photoluminescence

    • Author(s)
      M. Julkarnain, N. Murakoshi, A. Z. M. T. Islam, T. Fukuda, N. Kamata and Y. Arakawa
    • Organizer
      Int. Workshop on Nitride Semiconductors (IWN2014)
    • Place of Presentation
      Wroclaw, Poland
    • Year and Date
      2014-08-27 – 2014-08-29
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Presentation] Nonradiative Recombination Process in AlGaN Quantum Well and Its Excitation Density Dependence

    • Author(s)
      M. Julkarnain, A. Z. M. Touhidul Islam, T. Fukuda, N. Kamata, and H. Hirayama
    • Organizer
      Int. Symp. on the Science and Technology of Lighting, (LS14)
    • Place of Presentation
      Como, Italy
    • Year and Date
      2014-06-22 – 2014-06-27
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Presentation] Luminescence and Quenching Properties in GaPN Revealed by Below-Gap Excitation

    • Author(s)
      M. Suetsugu, A. Z. M. Touhidul Islam, T. Hanaoka, T. Fukuda, N. Kamata, S. Yagi,and H. Yaguchi
    • Organizer
      Int. Symp. on the Science and Technology of Lighting, (LS14)
    • Place of Presentation
      Como, Italy
    • Year and Date
      2014-06-22 – 2014-06-27
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] Dominant Nonradiative Centers in InGaN Single Quantum Well by Time-Resolved and Two-Wavelength Excited Photoluminescence

    • Author(s)
      M. Julkarnain, N. Murakoshi, A. Z. M. T. Islam, T. Fukuda, N. Kamata and Y. Arakawa
    • Organizer
      Int. Workshop on Nitride Semiconductors (IWN2014)
    • Place of Presentation
      Wroclaw, Poland
    • Year and Date
      2014-08-24 – 2014-08-28
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] Optical Characterization of Non-Radiative Centers and Improvement in Light Extraction Efficiency of Deep UV-LEDs

    • Author(s)
      N. Kamata, A. Z. M. Touhidul Islam, M. Akiba, K. Igarashi, N. Murakoshi, T. Fukuda, H. Hirayama
    • Place of Presentation
      Jpn-China-Korea Conf.
    • Data Source
      KAKENHI-PROJECT-21360003
  • [Presentation] MOCVD Growth and Characterization of THz Quantum Cascade Structure

    • Author(s)
      S. Toyoda, W. Terashima, N. Kamata, H. Hirayama
    • Organizer
      Int. Workshop on Nitride Semiconductors (IWN2014)
    • Place of Presentation
      Wroclaw, Poland
    • Year and Date
      2014-08-27 – 2014-08-29
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Presentation] Nonradiative and Trap Centers in Ba3Si6O12N2:Eu2+Phosphors Observed by Thermal and Below-Gap Excitation

    • Author(s)
      T. Li, N. Kamatam, T. Fukuda, and T. Kurushima
    • Organizer
      Int. Symp. on the Science and Technology of Lighting, (LS14)
    • Place of Presentation
      Como, Italy
    • Year and Date
      2014-06-22 – 2014-06-27
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Presentation] Nonradiative Centers in Deep-UV AlGaN-Based Quantum Wells Revealed by Two-Wavelength Excited Photoluminescence

    • Author(s)
      N. Kamata, A. Z. M. T. Islam, M. Julkarnain, N. Murakoshi, T. Fukuda and H. Hirayama
    • Organizer
      Int. Workshop on Nitride Semiconductors (IWN2014)
    • Place of Presentation
      Wroclaw, Poland
    • Year and Date
      2014-08-24 – 2014-08-29
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Presentation] 267 nm AlGaN UVC LED using p-AlGaN superlattice transparent hole-spreading contact layer

    • Author(s)
      Y. Kanazawa, J. Yun、S. Toyoda, N. Maeda, N. Kamata and H. Hirayama
    • Organizer
      Int. Symp. on the Science and Technology of Lighting, (LS14)
    • Place of Presentation
      Como, Italy
    • Year and Date
      2014-06-22 – 2014-06-27
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Presentation] Nonradiative Centers in Deep-UV AlGaN-Based Quantum Wells Revealed by Two-Wavelength Excited Photoluminescence

    • Author(s)
      N. Kamata, A. Z. M. T. Islam, M. Julkarnain, N. Murakoshi, T. Fukuda and H. Hirayama
    • Organizer
      Int. Workshop on Nitride Semiconductors (IWN2014)
    • Place of Presentation
      Wroclaw, Poland
    • Year and Date
      2014-08-24 – 2014-08-28
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] Microscopic Configuration of Energy Donor-Acceptor Pairs in Organic Thin Films Studied by Selectively excited Photoluminescence

    • Author(s)
      T. Otake, Y. Ishimaru, N. Kamata, and T. Fukuda
    • Organizer
      International Conference Materials Science and Technology
    • Place of Presentation
      Bangkok, Thailand
    • Year and Date
      2014-12-15 – 2014-12-16
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] Microscopic Configuration of Energy Donor-Acceptor Pairs in Organic Thin Films Studied by Selectively excited Photoluminescence

    • Author(s)
      T. Otake, Y. Ishimaru, N. Kamata, and T. Fukuda
    • Organizer
      International Conference Materials Science and Technology (MSAT-8)
    • Place of Presentation
      Bangkok, Thailand
    • Year and Date
      2014-12-15 – 2014-12-16
    • Data Source
      KAKENHI-PROJECT-24360005
  • [Presentation] Nonradiative and Trap Centers in Ba3Si6O12N2:Eu2+Phosphors Observed by Thermal and Below-Gap Excitation

    • Author(s)
      T. Li, N. Kamatam, T. Fukuda, and T. Kurushima
    • Organizer
      Int. Symp. on the Science and Technology of Lighting, (LS14)
    • Place of Presentation
      Como, Italy
    • Year and Date
      2014-06-22 – 2014-06-27
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] 267 nm AlGaN UVC LED using p-AlGaN superlattice transparent hole-spreading contact layer

    • Author(s)
      Y. Kanazawa, J. Yun、S. Toyoda, N. Maeda, N. Kamata and H. Hirayama
    • Organizer
      Int. Symp. on the Science and Technology of Lighting, (LS14)
    • Place of Presentation
      Como, Italy
    • Year and Date
      2014-06-22 – 2014-06-27
    • Data Source
      KAKENHI-PROJECT-25600087
  • [Presentation] Luminescence and Quenching Properties in GaPN Revealed by Below-Gap Excitation

    • Author(s)
      M. Suetsugu, A. Z. M. Touhidul Islam, T. Hanaoka, T. Fukuda, N. Kamata, S. Yagi,and H. Yaguchi
    • Organizer
      Int. Symp. on the Science and Technology of Lighting, (LS14)
    • Place of Presentation
      Como, Italy
    • Year and Date
      2014-06-22 – 2014-06-27
    • Data Source
      KAKENHI-PROJECT-24360005
  • 1.  HIRAYAMA Hideki (70270593)
    # of Collaborated Projects: 5 results
    # of Collaborated Products: 140 results
  • 2.  HONDA Zentaroh (30332563)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 1 results
  • 3.  TAKAHASHI Kohroh (10124596)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results
  • 4.  ARAKAWA Yasuhiko (30134638)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 23 results
  • 5.  SOMEYA Takeo (90292755)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 10 results
  • 6.  TERAMURA Daiyo (10008857)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 9 results
  • 7.  FUKUDA Takeshi (40509121)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 32 results
  • 8.  寺嶋 亘 (30450406)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 3 results
  • 9.  ISLAM Touhidul (90646358)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 11 results
  • 10.  YAMAGUCHI Katsuhiko (30251143)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 11.  YAMADA Koji (30008875)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 12.  HATANO Ken (40332316)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 13.  平塚 信之 (20114217)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 14.  外岡 和彦 (00357568)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 15.  矢口 裕之 (50239737)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 2 results

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