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IWANO Hirotaka  岩野 博隆

ORCIDConnect your ORCID iD *help
Researcher Number 50252268
Affiliation (based on the past Project Information) *help 1998: Grad.Schhol ofd Eng., Nagoya Univ., Research Assist., 工学研究科, 助手
1997: 名古屋大学, 大学院・工学研究科, 助手
1993 – 1996: Dept.of Engineering, Research Associate, 工学部, 助手
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials
Except Principal Investigator
表面界面物性 / Applied materials science/Crystal engineering / 固体物性 / Applied materials
Keywords
Principal Investigator
クーロンブロッケード現象 / 三端子構造 / 多重トンネル接合 / ホッピング伝導 / 集束イオンビーム
Except Principal Investigator
エピタキシャル成長 / ULSI / SiGe / コンタクト / Ge … More / epitaxial growth / surface migration / 高分解能電子エネルギー損失分光法 / 表面反応 / Schottky barrier / Si interface / Metal / Contact / 水素終端効果 / 自然酸化膜の抑制 / 水素同時添加効果 / Si(100)成長 / Si構造 / 超低抵抗コンタクト / コンタクト抵抗率 / 界面固相反応 / ショットキ障壁高さ / ショットキコンタクト特性 / Coシリサイド / Si界面 / ショットキー障壁 / Si 界面 / 金属 / H-termination / contact / tunneling spectroscopy / interface / silicide / 水素終端 / トンネル分光法 / 界面 / シリサイド / Two-step growth method / Strain-relaxed Si_<1-x>Ge_x layrs / Band splittings / Impurity doping / Growth of Si_<1-x>Ge_x layrs / 磁気抵抗効果 / 不純物濃度制御 / 歪量子井戸構造 / 東縛励起子発光 / 不純物ドープ / 低温成長 / SiGe薄膜 / 二段階成長法 / 無歪基板形成技術 / バンドスプリット / 不純物ド-ピング技術 / SiGe膜成長 / surface segregation / Si epitaxy / hydrogen / high-resolution electron energy loss spectroscopy / 表面反応過程 / ダイハイドライド構造 / 未結合手 / 水素終端シリコン表面 / 初期酸化 / 高分解能電子エネルギー損失分光 / 表面偏析 / 表面拡散 / 水素 / SiGe thin film / Anderson localization / negative magnetoresistance / 1D-VRH / p-Si wire / 磁気抵抗 / 1次元ホッピング伝導 / 不純物伝導 / 擬1次元キャリア / SiGe混晶膜 / アンダーソン局在 / 負の磁気抵抗 / 一次元可変領域ホッピング伝導 / p型Si細線 / dynamic process RHEED oscillation / surface reaction / 時間分解測定 / RHEED振動 / 動的素過程 / 表面泳動 / 水素終端面 / 水素ラジカル Less
  • Research Projects

    (8 results)
  • Co-Researchers

    (5 People)
  •  Development of Low-Resistivity Contact Materials for Future ULSIs

    • Principal Investigator
      YASUDA Yukio
    • Project Period (FY)
      1996 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      表面界面物性
    • Research Institution
      Nagoya University
  •  Si量子トランジスタデバイスの開発とクーロンブロッケードに関する研究Principal Investigator

    • Principal Investigator
      岩野 博隆
    • Project Period (FY)
      1995
    • Research Category
      Grant-in-Aid for Encouragement of Young Scientists (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      Nagoya University
  •  Study of Evaluation of Silicide/Silicon Interfaces by Tunneling Spectroscopy and Effects of H-Termination

    • Principal Investigator
      ZAIMA Shigeaki
    • Project Period (FY)
      1995 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      表面界面物性
    • Research Institution
      Nagoya University
  •  A study on influences of hydrogen on growth mechanisms of thin films by electron energy loss spectroscopy

    • Principal Investigator
      YASUDA Yukio
    • Project Period (FY)
      1994 – 1995
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      表面界面物性
    • Research Institution
      NAGOYA UNIVERSITY
  •  STUDY ON INFRA-RED OPTICAL DEVICES BY Si_<1-x>Ge_x HETERO-STRUCTURES

    • Principal Investigator
      YASUDA Yukio
    • Project Period (FY)
      1994 – 1995
    • Research Category
      Grant-in-Aid for Developmental Scientific Research (B)
    • Research Field
      Applied materials science/Crystal engineering
    • Research Institution
      NAGOYA UNIVERSITY
  •  電子エネルギー損失分光法を用いたフリーラジカルと半導体表面の相互作用の研究

    • Principal Investigator
      YASUDA Yukio
    • Project Period (FY)
      1993
    • Research Category
      Grant-in-Aid for Scientific Research on Priority Areas
    • Research Institution
      Nagoya University
  •  Development of a time-resolved measurement method for detecting surface dynamic processes of epitaxial growth and studies on surface migration of reaction species.

    • Principal Investigator
      ZAIMA Shigeaki
    • Project Period (FY)
      1992 – 1993
    • Research Category
      Grant-in-Aid for General Scientific Research (A)
    • Research Field
      Applied materials
    • Research Institution
      Nagoya University
  •  Studies on Quantum Transport Mechanism of Si Quasi-One-Dimensional Carrier Systems by a Time-of-Flight Method with Pulse Lasers

    • Principal Investigator
      YASUDA Yukio
    • Project Period (FY)
      1992 – 1993
    • Research Category
      Grant-in-Aid for General Scientific Research (B)
    • Research Field
      固体物性
    • Research Institution
      Nagoya University
  • 1.  ZAIMA Shigeaki (70158947)
    # of Collaborated Projects: 7 results
    # of Collaborated Products: 0 results
  • 2.  YASUDA Yukio (60126951)
    # of Collaborated Projects: 6 results
    # of Collaborated Products: 0 results
  • 3.  小出 康夫 (70195650)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 4.  ONGA Shinji
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 5.  SUGURO Kyoich
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results

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