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MASUOKA Fujio  桝岡 富士雄

ORCIDConnect your ORCID iD *help
Researcher Number 50270822
External Links
Affiliation (based on the past Project Information) *help 1996 – 1999: 東北大学, 電気通信研究所, 教授
1997: 東北大学, 電気通信研究, 教授
Review Section/Research Field
Principal Investigator
Electronic materials/Electric materials / 電子デバイス・機器工学
Except Principal Investigator
電子デバイス・機器工学
Keywords
Principal Investigator
Flash memory / M-SGT / SGT / Structural analysis / Silicon dioxide / 構造解析 / フラッシュメモリ / シリコン酸化膜 / SGT Flash memory / Three-dimensional MOSFET … More / M-SGTM-SGT / SGT Flashメモリ / Flashメモリ / 3次元MOSFET … More
Except Principal Investigator
SGT / 3次元MOSトランジスタ / MOSトランジスタ / Three dimensional integrated circuit / Three dimensional MOS transistor / MOS transistor / 3次元MOSFET / 3次元集積回路 / Mobility / Threshold Voltage / Voltage Current Characteristics / 3-Demensional MOS Transistor / MOS Transistor / 3次元MOSトランジスター / MOSトランジスター / モビリティー / しきい値 / 電圧電流特性 Less
  • Research Projects

    (4 results)
  • Co-Researchers

    (2 People)
  •  The Investigation of break down mechanisms in silicon dioxide films by a combination of electrical and structural analysis methodsPrincipal Investigator

    • Principal Investigator
      MASAOKA Fujio
    • Project Period (FY)
      1998 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      TOHOKU UNIVERSITY
  •  Investigation of high performance three-dimensional integrated circuits using three dimensional MOS devices

    • Principal Investigator
      ENDOH Tetsuo
    • Project Period (FY)
      1998 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      TOHOKU UNIVERSITY
  •  Investigation of nano meter scale MOS transistors for integrated circuitsPrincipal Investigator

    • Principal Investigator
      MASUOKA Fujio
    • Project Period (FY)
      1997 – 1999
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      TOHOKU UNIVERSITY
  •  Research of 3 Dimensional (3D) MOSFET's operation mechanism for future LSI

    • Principal Investigator
      ENDOH Tetsuo
    • Project Period (FY)
      1996 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Research Field
      電子デバイス・機器工学
    • Research Institution
      TOHOKU UNIVERSITY
  • 1.  ENDOH Tetsuo (00271990)
    # of Collaborated Projects: 4 results
    # of Collaborated Products: 0 results
  • 2.  SAKURABA Hiroshi (60241527)
    # of Collaborated Projects: 3 results
    # of Collaborated Products: 0 results

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