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Shen Xu-Qiang  沈 旭強

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SHEN XUQIANG  沈 旭強

SHEN Xu-Qiang  沈 旭強

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Researcher Number 50272381
Affiliation (Current) 2025: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 上級主任研究員
Affiliation (based on the past Project Information) *help 2022: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 上級主任研究員
2020 – 2021: 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 総括研究主幹
1996 – 1998: 理化学研究所, 半導体工学研究室, 基礎科学特別研究員
1996: The Institute of Physical and Chemieal Research Researcher, 半導体工学研究室, 基礎特研
Review Section/Research Field
Principal Investigator
Basic Section 30010:Crystal engineering-related / Electronic materials/Electric materials
Except Principal Investigator
Basic Section 21050:Electric and electronic materials-related / Electronic materials/Electric materials
Keywords
Principal Investigator
In-doping / AlGaN / GaN / RHEED / GSMBE / SSBE / 高温 / 有機金属気相成長 / 不純物 / 高温結晶成長 … More / AlN / 微細構造 / 高温成長 / AlN薄膜 / 窒化アルミニウム / アンモニアフリー / ヘテロエピタキシャル成長 / 窒化物 / Quantum dot / フォートルミネセンス / ガスソースMBE / 超音速ビーム / Inドーピング / 量子箱 … More
Except Principal Investigator
GaAs / RHEED / GaN / 絶縁化 / 外周構造 / 高耐圧化 / GaNパワーデバイス / 硼素 / イオン注入 / 硼素イオン注入 / 電界緩和 / 終端構造 / 高耐圧 / 縦型パワーデバイス / 窒化ガリウム / Quantum dot / AlGaN / Epitaxial growth / SSBE / 吸着原子の脱離過程の観察 / 高速応答の電子線回折観察 / SSBE法 / 半導体薄膜の結晶成長 / 拡散を促進 / 素過程を制御 / 並進運動エネルギー / 短パルス超音速ビームエピタキシ法 / 結晶成長 / エピタキシャル / 短パルスビーム / 超音速 / ガスソースMBE / 量子箱 / 超音速ビーム Less
  • Research Projects

    (4 results)
  • Research Products

    (12 results)
  • Co-Researchers

    (7 People)
  •  Study of boron-implanted resistive crystal layers to enhance avalanche ruggedness of ultra-low loss GaN power devices

    • Principal Investigator
      Miura Yoshinao
    • Project Period (FY)
      2020 – 2022
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Review Section
      Basic Section 21050:Electric and electronic materials-related
    • Research Institution
      National Institute of Advanced Industrial Science and Technology
  •  High-quality hetero-epitaxial AlN research by newly proposed high temperature metalorganic vapor phase epitaxyPrincipal Investigator

    • Principal Investigator
      SHEN XUQIANG
    • Project Period (FY)
      2020 – 2022
    • Research Category
      Grant-in-Aid for Scientific Research (B)
    • Review Section
      Basic Section 30010:Crystal engineering-related
    • Research Institution
      National Institute of Advanced Industrial Science and Technology
  •  Crystal growth of III-V nitride semiconductor and its applications by short pulse supersonic beam epitaxyPrincipal Investigator

    • Principal Investigator
      SHEN Xu-Qiang
    • Project Period (FY)
      1997 – 1998
    • Research Category
      Grant-in-Aid for Scientific Research (C)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      The Institute of Physical and Chemical Research (RIKEN)
  •  Development of reactively controlled super-sonic nozzle beam epitaxial growth technique

    • Principal Investigator
      AOYAGI Yoshinobu
    • Project Period (FY)
      1995 – 1996
    • Research Category
      Grant-in-Aid for Scientific Research (A)
    • Research Field
      Electronic materials/Electric materials
    • Research Institution
      The Institute of Physical and Chemical Research (RIKEN)

All 2023 2022 2021

All Journal Article Presentation Patent

  • [Journal Article] Behaviours of the lattice-polarity inversion in AlN growth on c-Al2O3 (0001) substrates by ammonia-free high temperature metalorganic chemical vapor deposition2022

    • Author(s)
      Shen Xuqiang、Matsuhata Hirofumi、Kojima Kazutoshi
    • Journal Title

      CrystEngComm

      Volume: 24 Issue: 33 Pages: 5922-5929

    • DOI

      10.1039/d2ce00652a

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20H02643
  • [Journal Article] Heteroepitaxial AlN growth on c-plane sapphire substrates by ammonia-free high temperature metalorganic chemical vapor deposition2022

    • Author(s)
      Shen Xu-Qiang、Kojima Kazutoshi
    • Journal Title

      Journal of Crystal Growth

      Volume: 581 Pages: 126496-126496

    • DOI

      10.1016/j.jcrysgro.2021.126496

    • Peer Reviewed
    • Data Source
      KAKENHI-PROJECT-20H02643
  • [Patent] 半導体装置および半導体装置の製造方法2023

    • Inventor(s)
      三浦喜直、中島昭、沈旭強、平井悠久、原田信介
    • Industrial Property Rights Holder
      国立研究開発法人産業技術総合研究所
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2023-515445
    • Filing Date
      2023
    • Data Source
      KAKENHI-PROJECT-20K04590
  • [Patent] 半導体装置および半導体装置の製造方法2022

    • Inventor(s)
      三浦喜直、中島昭、沈旭強、平井悠久、原田信介
    • Industrial Property Rights Holder
      国立研究開発法人産業技術総合研究所
    • Industrial Property Rights Type
      特許
    • Filing Date
      2022
    • Overseas
    • Data Source
      KAKENHI-PROJECT-20K04590
  • [Patent] 半導体装置および半導体装置の製造方法2021

    • Inventor(s)
      三浦喜直 中島昭 沈旭強 平井悠久 原田信介
    • Industrial Property Rights Holder
      国立研究開発法人産業技術総合研究所
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2021-072595
    • Filing Date
      2021
    • Data Source
      KAKENHI-PROJECT-20K04590
  • [Presentation] Heteroepitaxial growth of AlN by ammonia-free high-temperature metalorganic chemical vapor deposition (AFHT-MOCVD)2022

    • Author(s)
      X.Q. Shen and K. Kojima
    • Organizer
      International conference on optoelectronic materials, technology and application 2022 (OMTA2022)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02643
  • [Presentation] Lattice-polarity and microstructures in AlN films grown on c-Al2O3 (0001) substrates by NH3-free high-temperature MOCVD2022

    • Author(s)
      X.Q. Shen, H. Matsuhata and K. Kojima
    • Organizer
      International Workshop on Nitride Semiconductors (IWN2022)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02643
  • [Presentation] 半極性(10-13)面AlNエピ膜中の微細構造の評価2022

    • Author(s)
      沈旭強、児島一聡
    • Organizer
      第83回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02643
  • [Presentation] High-quality semipolar (10-13) AlN epilayers grown on m-plane sapphire substrates by NH3-free high temperature MOCVD2022

    • Author(s)
      X.Q. Shen and K. Kojima
    • Organizer
      5th International Workshop on Ultraviolet Materials and Devices (IWUMD 2022)
    • Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02643
  • [Presentation] アンモニアフリー高温有機金属気相成長法による高品質(10-13)半極性面AlNヘテロエピタキシャル成長2021

    • Author(s)
      沈旭強、児島一聡
    • Organizer
      第68回応用物理学会春季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02643
  • [Presentation] High quality polar and semipolar AlN grown by ammonia-free high temperature metalorganic chemical vapor deposition2021

    • Author(s)
      X. Q. Shen, and K. Kojima
    • Organizer
      The 7th International Forum on Wide Bandgap Semiconductors (IFWS2021)
    • Invited / Int'l Joint Research
    • Data Source
      KAKENHI-PROJECT-20H02643
  • [Presentation] アンモニアフリー高温有機金属気相成長法で成長したAlNヘテロエピタキシャル薄膜中の微細構造評価2021

    • Author(s)
      沈旭強、児島一聡
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Data Source
      KAKENHI-PROJECT-20H02643
  • 1.  AOYAGI Yoshinobu (70087469)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 2.  IWAI Sohachi (40087474)
    # of Collaborated Projects: 2 results
    # of Collaborated Products: 0 results
  • 3.  Miura Yoshinao (90828287)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 4.  張 随安 (20260218)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 5.  田中 悟 (80281640)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 6.  中島 昭 (60450657)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 0 results
  • 7.  児島 一聡 (40371041)
    # of Collaborated Projects: 1 results
    # of Collaborated Products: 9 results

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