TORIUMI Akira 鳥海明

Researcher Number	50323530
Other IDs
Affiliation (based on the past Project Information) *help	2020: 東京大学, 大学院工学系研究科(工学部), 教授 2016 – 2018: 東京大学, 大学院工学系研究科(工学部), 教授 2012 – 2015: 東京大学, 工学(系)研究科(研究院), 教授 2009 – 2011: The University of Tokyo, 大学院・工学系研究科, 教授 2008: 東大, 工学(系)研究科(研究院), 教授 2007: The University of Tokyo, 大学院・工学系研究科, 教授 2001 – 2005: 東京大学, 大学院・工学系研究科, 教授
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Electronic materials/Electric materials / Electronic materials/Electric materials / Electronic materials/Electric materials / Electron device/Electronic equipment / 電子デバイス・機器工学 Except Principal Investigator Basic Section 21050:Electric and electronic materials-related / Physical properties of metals
Keywords	Principal Investigator ゲルマニウム / FET / 酸化 / 同位体 / 半導体物性 / 電子デバイス / 移動度 / 金属・絶縁体転移 / VO2 / 遷移金属酸化物 … More / High-k膜 / 高圧酸化 / ペンタセン / TFT / シリコン / 電子相関 / モット転移 / 遷移金属酸化薄膜 / SmNiO3 / Mott転移 / 水素 / 金属絶縁体転移 / n-MOSFET / GeOI / 酸素不純物 / 水素アニール / 原子層堆積法 / 絶縁膜 / ゲートスタック / 劣化 / Gバンド / ダングリングボンド / 酸素熱処理 / Dバンド / ラマン / グラフェン / 界面 / 同位体酸素 / Deal-Grove モデル / シリコン・ゲルマニウム / 酸化機構 / 2次元材料 / ランダムテレグラフィックシグナルズ / 原子層 / MoS2 / 遷移金属カルコゲナイド / amorphous / polarizability / germanium / silicon / lanthanum oxide / yttrium oxide / hafnium oxide / high-k dielectrics / MISキャパシタ / ゲート絶縁膜 / オフアクシススパッタリング / オープンサーキットポテンシャル / スパックリング / Open Circuit Potential法 / 分光エリプソメトリー / 斜入射X線反射率測定 / 原子状酸素 / 酸化レート / 界面制御 / 基板面方位 / 高誘電率膜 / 光学フォノン / シリケート / Y2O3 / HfO2 / 界面層 / Y_2O_3 on Ge / LaYO_3薄膜 / 遠赤外特性 / Y-doped HfO_2 / Y_2O_3 / La_2O_3 / HfO_2 / アモルファス / 分極率 / 酸化ランタン / 酸化イットリウム / 酸化ハフニウム / 高誘電率絶縁膜 / 界面散乱 / HFO / 酸化物 / HFO2 / TiO2 / HfLaOx / Si-doped HfO2 / Ge / ショットキーバリア高さ / ESR / Fermi-level Pinning / GeO2 / Higher-k膜 / 構造相転移 / XPS / 界面ダイポール / 表面・界面物性 / 超薄膜 / 誘電体物性 / 電気・電子材料 / 薄膜成長機構 / 誘電率 / 赤外特性 / 粒密度 / 臨界核サイズ / ペンタセン接触 / Au / インピーダンス / 高圧アニール / サブミクロン / 粒径 / モビリティ / 有機トランジスタ / 有機薄膜 / miniaturization / grain / hysteresis / degradation / oganic / Mobility / Pentacene … More Except Principal Investigator 酸素イオン伝導機構 / 極薄電解質臨界膜厚 / 薄膜測定 / イオン輸送機構 / 等価回路 / YSZ / インピーダンススペクトル / 酸素空孔 / 高誘電率絶縁膜 / 伝導キャリア / イオン電導 / 電解質膜中の電気伝導 / 電解質膜 / 固体電解質材料 / 極薄YSZ膜 / 結晶構造 / キャリア拡散 / 電子伝導 / イオン伝導 / 極薄電解質膜 / Molecular Thin Film / Scanning Probe Microscopy / Crystal Growth / Thin Film / 分子膜 / 走査型トンネル顕微鏡 / 結晶成長 / 薄膜 Less

Study of ion transport mechanism in ultra-thin electrolyte membrane for low temperature operation of solid oxide fuel cell
- Principal Investigator
  
  NIWA Masaaki
- Project Period (FY)
  2018 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  The University of Tokyo
  Tohoku University
Study of oxidation mechanisms in Ge and SiGePrincipal Investigator
- Principal Investigator
  
  Toriumi Akira
- Project Period (FY)
  2016 – 2018
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
Formation and characterization of MoS2 pn junction with atomically sharp impurity profilePrincipal Investigator
- Principal Investigator
  
  Akira Toriumi
- Project Period (FY)
  2015 – 2016
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
酸化物薄膜における金属・絶縁体転移のサイズ効果Principal Investigator
- Principal Investigator
  
  鳥海明
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for JSPS Fellows
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
Study of carrier scattering mechanisms by Ge isotope and interface roughness in Ge thin filmsPrincipal Investigator
- Principal Investigator
  
  Toriumi Akira
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
極薄Ｇｅチャネルにおけるキャリア輸送機構の理解と制御Principal Investigator
- Principal Investigator
  
  鳥海明
- Project Period (FY)
  2013 – 2014
- Research Category
  
  Grant-in-Aid for JSPS Fellows
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
Study of field effect transistors using transition metal oxidesPrincipal Investigator
- Principal Investigator
  
  TORIUMI AKIRA
- Project Period (FY)
  2012 – 2013
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
高性能グラフェンＦＥＴに向けたゲートスタック技術の研究Principal Investigator
- Principal Investigator
  
  鳥海明
- Project Period (FY)
  2012 – 2014
- Research Category
  
  Grant-in-Aid for JSPS Fellows
- Research Field
  
  Electron device/Electronic equipment
- Research Institution
  The University of Tokyo
Understanding and Control of Electronic Properties of Nanometer-thick Dielectric FilmsPrincipal Investigator
- Principal Investigator
  
  TORIUMI Akira
- Project Period (FY)
  2007 – 2011
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
有機薄膜の積層化による伝導キャリアの膜中蓄積効果の研究Principal Investigator
- Principal Investigator
  
  鳥海明
- Project Period (FY)
  2003 – 2004
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
シリコン基板上に作製した超薄膜・希土類金属酸化物の誘電率制御指針の構築Principal Investigator
- Principal Investigator
  
  鳥海明
- Project Period (FY)
  2001 – 2003
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo
ナノ・プラスティックFETの研究開発Principal Investigator
- Principal Investigator
  
  鳥海明
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  電子デバイス・機器工学
- Research Institution
  The University of Tokyo
Control of thin-film growth by controlling the shape of 2-dimensional nucleus during initial stage
- Principal Investigator
  
  KYUNO Kentaro
- Project Period (FY)
  2001 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Physical properties of metals
- Research Institution
  The University of Tokyo
Study of Interface Control in Ultra-thin High-k Film on Silicon SubstratePrincipal Investigator
- Principal Investigator
  
  TORIUMI Akira
- Project Period (FY)
  2001 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (S)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  The University of Tokyo

[Book] 「Silicon-germanium(SiGe) nanostructures」 edited by Y.Shiraki and N.Usami Chapter 20 「High electron mobility germanium(Ge) metal oxide semiconductor field effect transistors(MPSFETs)」2011
- Author(s)
  A.Toriumi(分担執筆)
- Publisher
  WOODHEAD PUBLISHING IN MATERIALS
- Data Source
  KAKENHI-PROJECT-19106005
[Book] Chap. 11 :"Interface Properties of High-k Dielectrics on Germanium Advanced Gate Stacks for High-Mobility Semiconductors2007
- Author(s)
  A. Toriumi, K. Kita, M. Toyama and H. Nomura
- Publisher
  Springer
- Data Source
  KAKENHI-PROJECT-19106005
[Book] Materials Engineering of High-k Gate Dielectrics, "Dielectric Films for Advanced Microelectronics, " edited by M. Baklanov, M. Green and K. Maex2007
- Author(s)
  A. Toriumi, K. Kita
- Total Pages
  40
- Publisher
  John Wiley & Sons, Ltd
- Data Source
  KAKENHI-PROJECT-19106005
[Book] Materials Engineering of High-k Gate Dielectrics in "Dielectric Films for Advanced Microelectronics"(edited by M. Baklanov, M. Green and K. Maex)2007
- Author(s)
  A. Toriumi, K. Kita
- Publisher
  John Wiley & Sons, Ltd
- Data Source
  KAKENHI-PROJECT-19106005
[Book] Interface Properties of High-k Dielectrics On Germanium, Advanced Gate Stacks for High-Mobility Semiconductors, " edited byA. Dimoulas, E. Gusev, P. AcIntyre, M. Heyns2007
- Author(s)
  A. Toriumi, K. Kita, M. Toyama, H. Nomura
- Total Pages
  11
- Publisher
  Springer
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Germanium CMOS potential from material and process perspectives2018
- Author(s)
  A. Toriumi and T. Nishimura
- Journal Title
  
  Jpn. J. Appl.　Phys
  
  Volume: 57 Issue: 1 Pages: 010101-010101
- DOI
  10.7567/jjap.57.010101
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16H02331
[Journal Article] Rigidity Enhancement of GeO2 by Y-Doping for Reliable Ge Gate Stacks2018
- Author(s)
  T. Nishimura, X. Tang, C. Lu, T. Yajima, A, Toriumi
- Journal Title
  
  IEEE J. Elec. Dev. Soc.
  
  Volume: 6 Pages: 1212-1217
- DOI
  10.1109/jeds.2018.2875927
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-16H02331
[Journal Article] "Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics"2017
- Author(s)
  N. Fang, K. Nagashio, and A. Toriumi
- Journal Title
  
  2D Materials
  
  Volume: 4 Issue: 1 Pages: 015035-015035
- DOI
  10.1088/2053-1583/aa50c4
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13941, KAKENHI-PLANNED-25107004, KAKENHI-PROJECT-16K14446, KAKENHI-PROJECT-16H04343
[Journal Article] Study of SiGe oxidation kinetics for preferential SiO2 formation under a low O2 pressure condition2017
- Author(s)
  W. Song, and A. Toriumi
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 122 Issue: 18
- DOI
  10.1063/1.5009758
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H02331
[Journal Article] Thermal oxidation kinetics of germanium2017
- Author(s)
  X. Wang, T. Nishimura, T. Yajima, and A. Toriumi
- Journal Title
  
  Applied physics Letters
  
  Volume: 111 Issue: 5
- DOI
  10.1063/1.4997298
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-16H02331
[Journal Article] "Subthreshold transport in mono- and multilayered MoS2 FETs"2015
- Author(s)
  N. Fang, K. Nagashio, and A. Toriumi
- Journal Title
  
  Applied Physics Express
  
  Volume: 8 Issue: 6 Pages: 065203-065203
- DOI
  10.7567/apex.8.065203
- NAID
  210000137562
- Peer Reviewed / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13941, KAKENHI-PROJECT-26630121, KAKENHI-PLANNED-25107004
[Journal Article] "Reliability assessment of germanium gate stacks with promising initial characteristics. "2015
- Author(s)
  Cimang Lu, Choong Hyun Lee, Tomonori Nishimura, Kosuke Nagashio, and Akira Toriumi
- Journal Title
  
  Applied Physics Express
  
  Volume: 8 Issue: 2 Pages: 021301-021301
- DOI
  10.7567/apex.8.021301
- NAID
  210000137374
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-13F03058, KAKENHI-PROJECT-25249032
[Journal Article] Non-destructive Characterization of Oxide/germanium Interface by Direct-gap Photoluminescence Analysis2015
- Author(s)
  S. Kabuyanagi, T. Nishimura, T. Yajima and A. Toriumi
- Journal Title
  
  Applied Physics Express
  
  Volume: 8 Issue: 5 Pages: 051301-051303
- DOI
  10.7567/apex.8.051301
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14J11196, KAKENHI-PROJECT-25249032
[Journal Article] Impacts of oxygen passivation on poly-crystalline germanium thin film transistor2014
- Author(s)
  S. Kabuyanagi, T. Nishimura, K. Nagashio and A. Toriumi
- Journal Title
  
  Thin Solid Films
  
  Volume: 557 Pages: 334-337
- DOI
  10.1016/j.tsf.2013.11.133
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14J11196, KAKENHI-PROJECT-25249032
[Journal Article] "Atomically flat planarization of Ge(100), (110), and (111) surfaces in H2 annealing. "2014
- Author(s)
  Tomonori Nishimura, Shoichi Kabuyanagi, Wenfeng Zhang, Choong Hyun Lee, Takeaki Yajima, Kosuke Nagashio, and Akira Toriumi
- Journal Title
  
  Applied Physics Express
  
  Volume: 7 Issue: 5 Pages: 051301-051301
- DOI
  10.7567/apex.7.051301
- NAID
  210000137073
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-13F03058, KAKENHI-PROJECT-25249032, KAKENHI-PROJECT-25420320
[Journal Article] "Structural and thermodynamic consideration of metal oxide doped GeO2 for gate stack formation on germanium."2014
- Author(s)
  Cimang Lu, Choong Hyun Lee, Wenfeng Zhang, Tomonori Nishimura, Kosuke Nagashio, and Akira Toriumi
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 116 Issue: 17
- DOI
  10.1063/1.4901205
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-13F03058, KAKENHI-PROJECT-25249032
[Journal Article] Enhancement of thermal stability and water resistance in yttrium-doped GeO2/Ge gate stack2014
- Author(s)
  C. Lu, C. H. Lee, W. Zhang, T. Nishimura, K. Nagashio, and A. Toriumi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 104 Issue: 9 Pages: 92909-92909
- DOI
  10.1063/1.4868032
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12F02061, KAKENHI-PROJECT-13F03058, KAKENHI-PROJECT-25249032
[Journal Article] "Significant enhancement of High-Ns Electron Mobility in Ge n-MOSFETs with Atomically Flat Ge/GeO2 Interface."2014
- Author(s)
  C. H. Lee, T. Nishimura, C. Lu, W. Zhang, K. Nagashio, and A. Toriumi
- Journal Title
  
  ECS Transactions
  
  Volume: 61（３） Issue: 3 Pages: 147-156
- DOI
  10.1149/06103.0147ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-13F03058, KAKENHI-PROJECT-25249032
[Journal Article] "High Electron Mobility in Germanium Junctionless n-MOSFETs"2013
- Author(s)
  S. Kabuyanagi, T. Nishimura, K. Nagashio and A. Toriumi
- Journal Title
  
  ECS Transactions
  
  Volume: 58(9) Issue: 9 Pages: 309-315
- DOI
  10.1149/05809.0309ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25249032
[Journal Article] Conduction band offset at Ge02/Ge interface determined by internal photoemission and charge-corrected x-rav photoelectron spectroscopies2013
- Author(s)
  W. F. Zhang
- Journal Title
  
  Applied Physics Letters
  
  Volume: 102 Issue: 10 Pages: 102106-1
- DOI
  10.1063/1.4794417
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-12F02061, KAKENHI-PROJECT-22656142, KAKENHI-PROJECT-25249032
[Journal Article] Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors2013
- Author(s)
  C. H. Lee, T. Nishimura, T. Tabata, D. D. Zhao, K. Nagashio, and A. Toriumi
- Journal Title
  
  Applied Physics Letters
  
  Volume: 102 Issue: 23
- DOI
  10.1063/1.4810002
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-13F03058, KAKENHI-PROJECT-25249032
[Journal Article] "Atomically Flat Germanium (111) Surface by Hydrogen Annealing"2013
- Author(s)
  T. Nishimura, S. Kabuyanagi, C. H. Lee, T. Yajima, K. Nagashio and A. Toriumi
- Journal Title
  
  ECS Transactions
  
  Volume: 58(9) Issue: 9 Pages: 201-206
- DOI
  10.1149/05809.0201ecst
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25249032
[Journal Article] Counter Dipole Layer Formation in Multi-layer High-k Gate Stacks2012
- Author(s)
  S. Hibino, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi
- Journal Title
  
  Jpn. J. Appl. Phys
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Opportunity for Phase-controlled Higher-k HfO_22011
- Author(s)
  A. Toriumi, Y. Nakajima, and K. Kita
- Journal Title
  
  ECS-Trans.
  
  Volume: 41(7) Pages: 125-136
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Higher-k Scalability and Leakage Current Reduction of SiO2-Doped HfO2 in Direct Tunneling Regime2011
- Author(s)
  K.Tomida, K.Kita, A.Toriumi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 50 Issue: 11R Pages: 111502-111502
- DOI
  10.1143/jjap.50.111502
- NAID
  40019072737
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Interfacial Dipole at High-k Dielectrics/SiO2 Interface: X-ray Photoelectron Spectroscopy Characteristics2011
- Author(s)
  L.Q.Zhu, K.Kita, T.Nishimura, K.Nagashio, S.K.Wang, A.Toriumi
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: Vol.50
- NAID
  40018777874
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Higher-k Scalability and Leakage Current Reduction of SiO_2-Doped HfO_2 in Direct Tunneling Regime2011
- Author(s)
  K. Tomida, K. Kita, and A. Toriumi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 50 Pages: 111502-111502
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide semiconductor devices2010
- Author(s)
  Y.Zhao, K.Kita, A.Toriumi
- Journal Title
  
  Appl.Phys.Letters
  
  Volume: 96
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Experimental Demonstration of Higher-k Phase HfO2 through Non equilibrium Thermal Treatment2010
- Author(s)
  Y.Nakajima, K.Kita, T.Nishimura, K.Nagashio, A.Toriumi
- Journal Title
  
  ECS Transactions
  
  Volume: 28(2) Pages: 203-212
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Direct LaLuO3/Ge Gate Stack Formation by Interface Scavenging and Subsequent Low Temperature O2 Annealing2010
- Author(s)
  T.Tabata, C.H.Lee, K.Kita, A.Toriumi
- Journal Title
  
  ECS Transactions
  
  Volume: 33(3) Pages: 375-382
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Oxidation, Diffusion and Desorption in Ge/GeO2 System2010
- Author(s)
  A.Toriumi, S.K.Wang, C.H.Lee, M.Yoshida, K.Kita, T.Nishimura, K.Nagashio
- Journal Title
  
  ECS Transactions
  
  Volume: 28(2) Pages: 171-180
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Thermodynamic analysis of moistureabsorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices2010
- Author(s)
  Y. Zhao, K. Kita, and A. Toriumi
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 96 Pages: 242901-242901
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Feasibility of Ge CMOS for Beyond Si-CMOS2010
- Author(s)
  A.Toriumi, C.H.Lee, T, Nishimura, K.Kita, S.K.Wang, M.Yoshida, K.Nagashio
- Journal Title
  
  ECS Transactions
  
  Volume: 33(6) Pages: 33-46
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Observation of Dipole Layer Formed at High-k Dielectrics/SiO2 Interface with X-ray Photoelectron Spectroscopy2010
- Author(s)
  L.Q.Zhu, K.Kita, T.Nishimura, K.Nagashio, S.K.Wang, A.Toriumi
- Journal Title
  
  Applied Physics Express
  
  Volume: Vol.3
- NAID
  210000014682
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Observation of Dipole Layer Formed at High-k Dielectrics/SiO_2 Interface with X-ray Photoelectron Spectroscopy2010
- Author(s)
  L. Q. Zhu, K. Kita, T. Nishimura, K. Nagashio, S. K. Wang, and A. Toriumi
- Journal Title
  
  Appl. Phys. Exp.
  
  Volume: 3 Pages: 61501-61501
- NAID
  10027015062
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Formation of Dipole Layers at Oxide Interfaces in High-k Gate Stacks2010
- Author(s)
  K.Kita, L.Q.Zhu T.Nishimura, K.Nagashio, A.Toriumi
- Journal Title
  
  ECS Transactions
  
  Volume: 33(6) Pages: 463-477
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Desorption kinetics of GeO from GeO2/Ge structure2010
- Author(s)
  S.K.Wang, K.Kita, C.H.Lee, T.Tabata, T.Nishimura, K.Nagashio , A.Toriumi
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 108
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Ge/GeO2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics2009
- Author(s)
  C.H.Lee, T.Tabata, T.Nishimura, K.Nagashio, K.Kita, A.Toriumi
- Journal Title
  
  Applied Physics Express 2
  
  Pages: 71404-71404
- NAID
  210000014403
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Thermodynamics and kinetics for suppression of GeO desorption by high pressure oxidation of Ge2009
- Author(s)
  K.Nagashio, C.H.Lee, T.Nishimura, K.Kita, A.Toriumi
- Journal Title
  
  Materials Research Society Symposium Proceedings 1155
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Origin of Electric Dipoles Formed at High-k/SiO_2 Interface2009
- Author(s)
  K. Kita, A. Toriumi
- Journal Title
  
  Appl.Phys.Lett 94
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] On the Origin of anomalous VTH shift in high-k MOSFETs2009
- Author(s)
  A.Toriumi, K.Kita
- Journal Title
  
  ECS Transactions 19(1)
  
  Pages: 243-252
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Thermodynamics and kinetics for suppression of GeO desorption by high pressure oxidation of Ge2009
- Author(s)
  K. Nagashio, C. H. Lee, T. Nishimura, K. Kita, and A. Toriumi
- Journal Title
  
  MRS Symp. Proc.
  
  Volume: 1155 Pages: 6-2
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Dielectric and electrical properties of amorphous La1.xTaxOy films as higher-k gate insulators2009
- Author(s)
  Y.Zhao, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Journal of Applied Physics 105
  
  Pages: 42901-42901
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Origin of Electric Dipoles Formed at High-k/SiO2 Interface2009
- Author(s)
  K.Kita, A.Toriumi
- Journal Title
  
  Applied Physics Letter 94
  
  Pages: 132902-132902
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Control of Properties of GeO2 Films and Ge/GeO2 Interfaces by the Suppression of GeO Volatilization2009
- Author(s)
  K.Kita, C.H.Lee, T.Nishimura, K.Nagashio, A.Toriumi
- Journal Title
  
  ECS Transactions 19(2)
  
  Pages: 101-116
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Band gap enhancement and electrical properties of La_2O_3 films doped with Y_2O_3 as high-k gate insulators2009
- Author(s)
  Y. Zhao, K. Kita, K. Kyuno, and A. Toriumi
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 94 Pages: 42901-42901
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Anomalous VFB Shift in High-k Gate Stacks-Is its origin at the top or bottom Interface?-2009
- Author(s)
  A.Toriumi, T.Nabatame
- Journal Title
  
  ECS Transactions 25(6)
  
  Pages: 3-16
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Opportunities and challenges for Ge CMOS-Control of interfacing field on Ge is a key-2009
- Author(s)
  A.Toriumi, T.Tabata, C.H.Lee, T.Nishimura, K.Kita, K.Nagashio
- Journal Title
  
  Microelectronic Engineering 86
  
  Pages: 1571-1576
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Ge/GeO2 Interface Control with High Pressure Oxidation for Improving Electrical Characteristics2009
- Author(s)
  C.H.Lee, T.Tabata, T.Nishimura, K.Nagashio, K.Kita, A.Toriumi
- Journal Title
  
  ECS Transactions 19(1)
  
  Pages: 165-173
- NAID
  210000014403
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Dielectric and electrical properties of amorphous La_<1-x> Ta_xO_y films as higher-k gate insulators2009
- Author(s)
  Y. Zhao, K. Kita, K. Kyuno, and A. Toriumi
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 105 Pages: 34103-34103
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Band gap enhancement and electrical properties of La2O3 films doped with Y2O3 as high-k gate insulators2009
- Author(s)
  Y.Zhao, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Applied Physics Letter 94
  
  Pages: 42901-42901
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film2008
- Author(s)
  T. Nishimura, K. Kita, A. Toriumi
- Journal Title
  
  Appl.Phys.Exp 1
- NAID
  10025080321
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Control of high-k/germanium interface properties through selection of high-k materials and suppression of GeO volatilization2008
- Author(s)
  K. Kita, T. Takahashi, H. Nomura, S. Suzuki, T. Nishimura and A. Toriumi
- Journal Title
  
  Appl. Surf. Sci.
  
  Volume: 254 Pages: 6100-6105
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film2008
- Author(s)
  T. Nishimura, K. Kita, and A. Toriumi
- Journal Title
  
  Appl. Phys. Exp.
  
  Volume: 1
- NAID
  10025080321
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Internal Photoemission over HfO_2 and Hf_<1-x> Si_xO_2 High-k Insulating Barriers : Band Offset and Interfacial Dipole Characterization2008
- Author(s)
  J. Widiez, K. Kita, K. Tomida, T. Nishimura, and A. Toriumi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 47 Pages: 2410-2414
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Mechanisms of and Solutions to Moisture Absorption of Lanthanum Oxide as Highk Gate Dielectric2007
- Author(s)
  Y. Zhao, K. Kita, K. Kyuno, A. Toriumi
- Journal Title
  
  ECS Transaction 6(1)
  
  Pages: 141-148
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Eividence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface2007
- Author(s)
  T. Nishimura, K. Kita, A. Toriumi
- Journal Title
  
  Applied Physics Letter 91
  
  Pages: 123123-123123
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Dramatic Improvement of GeO2/Ge MIS Characteristics by Suppression of GeO Volatilization2007
- Author(s)
  K. Kita, S. Suzuki, H. Nomura, T. Takahashi, T. Nishimura, A. Toriumi
- Journal Title
  
  ECS Transaction 11(4)
  
  Pages: 461-469
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface2007
- Author(s)
  T. Nishimura, K. Kita, and A. Toriumi
- Journal Title
  
  Appl. Phys. Lett.
  
  Volume: 91 Pages: 123123-123123
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Current Status and Perspective of High-k Gate Stack Materials Engineering for Further Scaled CMOS2007
- Author(s)
  A. Toriumi
- Journal Title
  
  ECS Transaction 11(6)
  
  Pages: 3-16
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Study of La-Induced Flat band Voltage Shift in Metal/HfLaO_x/SiO_2/Si Capacitors2007
- Author(s)
  Y. Yamamoto, K. Kita, K. Kyuno and A. Toriumi
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 46(11) Pages: 7251-7255
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Mechanisms of and Solutions to Moisture Absorption of Lanthanum Oxide as High k Gate Dielectric2007
- Author(s)
  Y. Zhao, K. Kita, K. Kyuno and A. Toriumi
- Journal Title
  
  ECS-Trans.
  
  Volume: 6(1) Pages: 141-148
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Study of La-Induced Flatband Voltage Shift in Metal/HfLaOx/SiO2/Si Capacitors2007
- Author(s)
  Y. Yamamoto, K. Kita, K. Kyuno, A. Toriumi
- Journal Title
  
  Japanese Journal of Applied Physics 46(11)
  
  Pages: 7251-7255
- NAID
  40015705092
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Suppression of Leakage Current and Moisture Absorption of La2O3 Films with Ultraviolet Ozone Post Treatment2007
- Author(s)
  Y. Zhao, K. Kita, K. Kyuno, A. Toriumi
- Journal Title
  
  Japanese Journal of Applied Physics Pt. 1 46(7)
  
  Pages: 4189-4192
- NAID
  40015465525
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19106005
[Journal Article] Doped HfO_2 for Higher-k Dielectrics2006
- Author(s)
  A.Toriumi, Y.Yamamoto, Y.Zhao, K.Tomida, K.Kita
- Journal Title
  
  ECS Transactions 1(to be published)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Origin of Permittivity Enhancement of HfSiO and HfON Film with High Temperature Annealing2006
- Author(s)
  K.Tomida, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  International Conference on Microelectronics and Interfaces (ICMI'06)
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Dielectric Properties of Metal-Doped HfO_2 for Higher-k Gate Insulators (invited paper)2006
- Author(s)
  K.Kita, K.Tomida, Y.Yamamoto, Y.Zhao, K.Kyuno, A.Toriumi
- Journal Title
  
  2006 International Meeting for Future of Electron Devices, Kansai (IMFEDK)
  
  Pages: 27-28
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Ge 系電子デバイスの展望2006
- Author(s)
  鳥海明
- Journal Title
  
  日本金属学会セミナー・非シリコン半導体の現状と展望
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon2006
- Author(s)
  Y.Zhao, M.Toyama, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Applied Physics Letters 88(7)
  
  Pages: 72904-72904
- NAID
  10022542508
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Design Methodology of Higher-k Ternary Dielectric Films with Polarizability Engineering2006
- Author(s)
  K.Kita, Y.Yamamoto, K.Tomida, Y.Zhao, A.Toriumi
- Journal Title
  
  Ext.Abst. 11th Workshop on Gate Stacks -Physics in Materials, Fabrication Processes and Characterizations-
  
  Pages: 233-238
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Prospects of Ge Devices2006
- Author(s)
  A.Toriumi
- Journal Title
  
  Present Status and Prospects of Non-Silicon Devices, The Japan Institute of Metals Seminar
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Doped HfO_2 for Higher-k Dielectrics2006
- Author(s)
  A.Toriumi, Y.Yamamoto, Y.Zhao, K.Tomida, K.Kita
- Journal Title
  
  ECS Transactions 1(出版予定)
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Moisture-absorption-induced permittivity deterioration and surface roughness enhancement of lanthanum oxide films on silicon2006
- Author(s)
  Y.Zhao, M.Toyama, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Appl.Phys.Lett. 88
  
  Pages: 72904-72904
- NAID
  10022542508
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Doped HfO^2 for Higher-k Dielectrics2006
- Author(s)
  A.Toriumi et al.
- Journal Title
  
  ECS Transactions 1(出版予定)
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Evolution of Leakage Paths in HfO_2/SiO_2 Stacked Gate Dielectrics : A Stable Direct Observation by Ultrahigh Vacuum Conducting Atomic Force Microscopy2005
- Author(s)
  K.Kyuno, K.Kita, A.Toriumi
- Journal Title
  
  Appl.Phys.Lett. 86(6)
  
  Pages: 63510-63510
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Ion-Implanted p/n Junction Characteristics p- and n-type Germanium2005
- Author(s)
  T.Nishimura, M.Toyama, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 2005 Int.Conf. on Solid State Devices and Materials (SSDM)
  
  Pages: 520-521
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] High Crystallization Temperature and Low Fixed Charge Density of HfLaOx Films2005
- Author(s)
  Y.Yamamoto, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  36th IEEE Semiconductor Interface Specialists Conference (SISC) 36
  
  Pages: 10-10
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] GIXR Analysis of High-k Multilayer Structure2005
- Author(s)
  H.Shimizu, K.Tomida, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 10th Workshop on Gate Stacks -Physics in Materials, Fabrication Processes and Characterizations-
  
  Pages: 167-172
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Thermally Robust Y_2O_3/Ge MOS Capacitors2005
- Author(s)
  H.Nomura, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 2005 Int.Conf. on Solid State Devices and Materials (SSDM)
  
  Pages: 858-859
- NAID
  10022543442
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Evolution of leakage paths in HfO_2/SiO_2 stacked gate dielectrics : A stable direct observation by ultrahigh vacuum conducting atomic force microscopy2005
- Author(s)
  K.Kyuno, K.Kita, A.Toriumi
- Journal Title
  
  Applied Physics Letters 86(6)
  
  Pages: 63510-63510
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Effects of Germanium Surface Orientation on HfO_2/Ge Interface2005
- Author(s)
  M.Toyama, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 10th Workshop on Gate Stacks -Physics in Materials, Fabrication Processes and Characterizations-
  
  Pages: 209-214
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Challenges and Prospect of High-k Gate Dielectrics Technology (invited paper)2005
- Author(s)
  A.Toriumi
- Journal Title
  
  85th Spring Meeting of The Chemical Society of Japan 2L2-25
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Design Methodology for La_2O_3-Based Ternary Higher-k Dielectrics2005
- Author(s)
  K.Kita, Yi Zhao, Y.Yamamoto, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 2005 Int.Conf. on Solid State Devices and Materials (SSDM)
  
  Pages: 252-253
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Design Methodology for La2O_3-Based Ternary Higher-k Dielectrics2005
- Author(s)
  K.Kita, Yi Zhao, Y.Yamamoto, K.Kyuno, A.Toriumi
- Journal Title
  
  Extended Abstracts of 2005 International Conference on Solid State Devices and Materials 2005
  
  Pages: 858-859
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Far- and Mid-Infrared Absorption Study of HfO_2/SiO_2/Si System2005
- Author(s)
  A.Toriumi et al.
- Journal Title
  
  207th Meeting of the Electrochemical Society 207
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Polarity Dependence of Leakage Current in HfO_2/SiO_2 Stacked Structures : An Observation by UHV-C-AFM2005
- Author(s)
  K.Kyuno, K.Kita, A.Toriumi
- Journal Title
  
  Ext.Abst. 10th Workshop on Gate Stacks -Physics in Materials, Fabrication Processes and Characterizations-
  
  Pages: 309-314
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Moisture Absorption-Induced Permittivity Deterioration and Surface Roughness Enhancement of Lanthanum Oxide Films on Silicon2005
- Author(s)
  Y.Zhao, M.Toyama, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 2005 Int.Conf. on Solid State Devices and Materials (SSDM)
  
  Pages: 546-547
- NAID
  10022542508
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Annealing Effects on CVD-SiO_2 Films Characterized by OCP Measurement2005
- Author(s)
  K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 10th Workshop on Gate Stacks -Physics in Materials, Fabrication Processes and Characterizations-
  
  Pages: 265-270
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Kinetic Model of Si Oxidation at HfO_2/Si Interface with Post Deposition Annealing2005
- Author(s)
  H.Shimizu, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Jpn.J.Appl.Phys.Pt.1 44(8)
  
  Pages: 6131-6135
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Permittivity Enhancement of Hf_<(1-x)>Si_xO_2 Film with High Temperature Annealing2005
- Author(s)
  K.Tomida, K.Kita, A.Toriumi
- Journal Title
  
  Ext.Abst. 2005 Int.Conf. on Solid State Devices and Materials (SSDM)
  
  Pages: 232-233
- NAID
  10022541528
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] A New Hf-based Dielectric Member, HfLaO_x, for Amorphous High-k Gate Insulators in Advanced CMOS2005
- Author(s)
  Y.Yamamoto, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 2005 Int.Conf. on Solid State Devices and Materials (SSDM)
  
  Pages: 254-255
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Kinetic Model of Si Oxidation at HfO_2/Si Interface with Post Deposition Annealing2005
- Author(s)
  H.Shimizu, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Japanese Journal of Applied Physics Pt.1,44
  
  Pages: 6131-6135
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Far- and Mid- Infrared Absorption Study of HfO_2/SiO_2/Si System (invited paper)2005
- Author(s)
  A.Toriumi, K.Tomida, H.Shimizu, K.Kita, K.Kyuno
- Journal Title
  
  207th Meeting of the Electrochemical Society
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Challenges and Prospect of High-k Gate Dielectrics Technology2005
- Author(s)
  A.Toriumi
- Journal Title
  
  Journal of The Surface Science Society of Japan HYOMEN KAGAKU 26(5)
  
  Pages: 242-248
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] High Crystallization Temperature and Low Fixed Charge Density of HfLaO_x Films2005
- Author(s)
  Y.Yamamoto, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  36th IEEE Semiconductor Interface Specialists Conference (SISC) P-11
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Initial Growth Mechanism Difference between HfO_2 Films on Ge and Si Substrates2004
- Author(s)
  K.Kita, M.Sasagawa, M.Toyama, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 9th Workshop on Formation, Characterization and Reliability of Ultrathin Silicon Oxides
  
  Pages: 259-264
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Growth Mechanism Difference of Sputtered HfO_2 between on Ge and on Si2004
- Author(s)
  K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Appl.Phys.Lett. 85(1)
  
  Pages: 52-54
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Materials Engineering for Hidh-k Gate Stack Technology2004
- Author(s)
  A.Toriumi
- Journal Title
  
  Ext. Abst. of 2004 Int. Workshop on Dielectric Thin Films for Future ULSI Devices-Science and Technology 2004
  
  Pages: 3-4
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Retarded Growth of Sputtered HfO_2 films on Germanium2004
- Author(s)
  K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Integration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions, MRS Symp.Proc. 811
  
  Pages: 169-174
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Generalized Model of Oxidation Mechanism at HfO_2/Si Interface with Post-Deposition Annealing2004
- Author(s)
  H.Shimizu, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 2004 Int.Conf. Solid State Dev.Mater. (SSDM)
  
  Pages: 796-797
- NAID
  10022540167
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Materials Engineering for High-k Gate Stack Technology2004
- Author(s)
  A.Toriumi
- Journal Title
  
  Ext.Abst. of 2004 Int. Workshop on Dielectric Thin Films for Future ULSI Devices - Science and Technology (IWDTF)
  
  Pages: 3-4
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Dielectric Constant Increase of Yttrium-Doped HfO_2 by Structural Phase Modification2004
- Author(s)
  K Kita, K Kyuno, A Toriumi
- Journal Title
  
  Ext.Abst. 2004 Int.Conf. Solid State Dev.Mater. (SSDM)
  
  Pages: 794-795
- NAID
  10022540160
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Oxidation Mechanism at HfO_2/Si Interface2004
- Author(s)
  H.Shimizu, K.Tomida, M.Sasagawa, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 9th Workshop on Formation, Characterization and Reliability of Ultrathin Silicon Oxides
  
  Pages: 265-270
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Permittivity Increase of Yttrium-Doped HfO_2 through Structural Phase Transformation2004
- Author(s)
  K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  35th IEEE Semiconductor Interface Specialists Conference (SISC) LP-3
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Stable Observation of the Evolution of Leakage Spots in HfO_2/SiO_2 Stacked Structures2004
- Author(s)
  K.Kyuno, K.Kita, A.Toriumi
- Journal Title
  
  Ext.Abst. 2004 Int.Conf. Solid State Dev.Mater. (SSDM)
  
  Pages: 788-789
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] IR Absorption Study of HfO_2 and HfO_2/Si Interface Ranging from 200cm^<-1> to 2000cm^<-1>2004
- Author(s)
  K.Tomida, H.Shimizu, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Integration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions, MRS Symp.Proc. 811
  
  Pages: 319-324
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Difference between O_2 and N_2 Annealing Effects on CVD-SiO_2 Film Quality Studied by Open-Circuit Measurement2004
- Author(s)
  K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 2004 Int.Conf. Solid State Dev.Mater. (SSDM)
  
  Pages: 786-787
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Far Infrared Study of Structural Distortion and Transformation of HfO_2 by Introducing a Slight Amount Si2004
- Author(s)
  K.Tomida, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 2004 Int.Conf. Solid State Dev.Mater. (SSDM)
  
  Pages: 790-791
- NAID
  10022540150
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Semiconducting Properties of Pentacene Thin Films Studied by Complex Impedance Analysis and Photo-induced Effects.2004
- Author(s)
  A.Toriumi et al.
- Journal Title
  
  206^<th> Meeting of The Electrochemical Society,(Hawaii)
- Data Source
  KAKENHI-PROJECT-15656081
[Journal Article] Permittivity Increase of Yttrium-Doped HfO_2 through Structural Phase Transformation2004
- Author(s)
  K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Appl.Phys.Lett. 86(7)102906(2005).rface Specialists Conference (SISC) LP-3
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Advantages of Ge (111) Surface for High Quality HfO_2/Ge Interface2004
- Author(s)
  M.Toyama, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 2004 Int.Conf. Solid State Dev.Mater. (SSDM)
  
  Pages: 226-227
- NAID
  10022538299
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Post-Deposition Annealing Effects on Interface States Generation in HfO_2/SiO_2/Si MOS Capacitors2004
- Author(s)
  M.Sasagawa, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 2004 Int.Conf. Solid State Dev.Mater. (SSDM)
  
  Pages: 534-535
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Oxidation-Induced Damages on Germanium MIS Capacitors with HfO_2 Gate Dielectrics2003
- Author(s)
  K.Kita, M.Sasagawa, K.Tomida, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst. 2003 Int.Conf. Solid State Dev.Mater. (SSDM)
  
  Pages: 292-293
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] New Method for Characterizing Dielectric Properties of High-k Films with Time-Dependent Open-Circuit Potential Measurement2003
- Author(s)
  K.Kita, M.Sasagawa, K.Kyuno, A.Toriumi
- Journal Title
  
  Jpn.J.Appl.Phys. 42,Pt.2(6B)
- NAID
  10011259919
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] A New Characterization Technique for Depth-Dependent Dielectric Properties of High-k Films by Open-Circuit Potential Measurement2003
- Author(s)
  K.Kita, M.Sasagawa, K.Kyuno, A.Toriumi
- Journal Title
  
  2003 Int. Conference on Characterization and Metrology for ULSI Technology, AIP Conf.Proc. 550
  
  Pages: 166-170
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Further EOT Scaling of Ge/HfO_2 over Si/HfO_2 MOS Systems2003
- Author(s)
  K.Kita, M.Sasagawa, K.Tomida, M.Toyama, K.Kyuno, A.Toriumi
- Journal Title
  
  Int. Workshop on Gate Insulator (IWGI)
  
  Pages: 186-191
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] Interface Oxidation Mechanism in HfO_2/Silicon System with Post-Deposition Annealing2003
- Author(s)
  H.Shimizu, M.Sasagawa, K.Kita, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst.Int.Conf. Solid State Dev.Mater. (SSDM)
  
  Pages: 486-487
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Journal Article] New method for Characterizing Dielectric Properties of High-k Films Using Time-Dependent Open-Circuit Potential Measurement2002
- Author(s)
  K.Kita M.Sasagawa, K.Kyuno, A.Toriumi
- Journal Title
  
  Ext.Abst.Int.Conf. Solid State Dev.Mater. (SSDM)
  
  Pages: 66-67
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Patent] 特許2007
- Inventor(s)
  鳥海明, 西村知紀
- Industrial Property Rights Holder
  東京大学
- Industrial Property Number
  2007-227480
- Filing Date
  2007-09-03
- Data Source
  KAKENHI-PROJECT-19106005
[Patent] 半導体装置及びその製造方法2007
- Inventor(s)
  鳥海明, 西村知紀
- Industrial Property Rights Holder
  東京大学
- Industrial Property Number
  2007-227480
- Filing Date
  2007-09-03
- Data Source
  KAKENHI-PROJECT-19106005
[Patent] 特許2005
- Inventor(s)
  鳥海明他3名
- Industrial Property Rights Holder
  国立大学法人東京大学
- Filing Date
  2005-08-30
- Data Source
  KAKENHI-PROJECT-13852009
[Patent] 特許2005
- Inventor(s)
  鳥海明, 喜多浩之, 富田一行, 山本芳樹
- Industrial Property Rights Holder
  国立大学法人東京大学
- Filing Date
  2005-08-30
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Patent] 半導体装置及びその製造方法2004
- Inventor(s)
  鳥海明, 喜多浩之
- Industrial Property Rights Holder
  国立大学法人東京大学
- Industrial Property Number
  2004-250393
- Filing Date
  2004-08-30
- Data Source
  KAKENHI-PROJECT-13852009
[Patent] 特許2004
- Inventor(s)
  鳥海明, 喜多浩之
- Industrial Property Rights Holder
  国立大学法人東京大学
- Industrial Property Number
  2004-250393
- Filing Date
  2004-08-30
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-13852009
[Presentation] Geの酸化機構はSiと何が異なるのだろうか？2019
- Author(s)
  王旭, 西村知紀, 鳥海明
- Organizer
  第24回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] Germaniumの高圧酸素熱酸化機構と形成されたGeO2膜の性質2019
- Author(s)
  王旭、西村知紀、鳥海明
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] アモルファスネットワーク構造の安定性から見たGeO2の脆弱性2019
- Author(s)
  謝敏, 西村知紀, 矢嶋赳彬, 鳥海明
- Organizer
  第24回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] Is crystallization of GeO2 on Ge really triggered by GeO desorption?2018
- Author(s)
  Min Xie, Tomonori Nishimura, Takeaki Yajima, Akira Toriumi
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] Thermal oxidation kinetics of Ge under high pressure O22018
- Author(s)
  X. Wang, T. Nishimura, T. Yajima, and A. Toriumi
- Organizer
  SSDSM2018
- Invited
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] Network reinforcement of amorphous GeO2 by Y doping for highly reliable Ge gate stacks2018
- Author(s)
  T. Nishimura, X. Tang, C. Lu, T. Yajima, and A. Toriumi
- Organizer
  20th Workshop on Dielectrics in Microelectronics (W0DIM 2018)
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] Thermal oxidation kinetics of Ge under high O2 pressure2018
- Author(s)
  X. Wang、T. Nishimura、T. Yajima、A. Toriumi
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] Recent Achievements and Challenges in Ge-MOSFETs2018
- Author(s)
  A. Toriumi
- Organizer
  1st Joint ISTDM / ICSI 2018 Conference
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] ゲルマニウム電子デバイスに向けた界面制御2018
- Author(s)
  鳥海明
- Organizer
  第65回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] How Ge atoms behave in thermal oxidation of SiGe?2018
- Author(s)
  X. Li、Y. Noma、W. Song、T. Nishimura、A. Toriumi
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] SiGeの熱酸化機構2018
- Author(s)
  宋宇振, 李秀妍, 野間勇助, 西村知紀, 鳥海明
- Organizer
  第24回電子デバイス界面テクノロジー研究会
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] Atomically flat interface formation on Ge(111) in oxidation process2018
- Author(s)
  T. Nishimura, S. Takemura, X. Wang, S. Shibayama, T. Yajima, and A. Toriumi
- Organizer
  SSDM2018
- Invited
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] Interface Reaction, Bulk Crystallization and Electrical Degradation of GeO2 on Ge2018
- Author(s)
  S. Takemura, T. Nishimura, A. Toriumi
- Organizer
  IEEE SILICON NANOELECTRONICS WORKSHOP 2018(SNW2018)
- Invited
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] Opportunities and Challengies in Ge CMOS2018
- Author(s)
  A. Toriumi
- Organizer
  ENGE 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] Why GeO2 growth on Ge is suppressed and GeO2/Ge stack is much improved in high pressure O2 oxidation?2018
- Author(s)
  X. Wang and A. Toriumi
- Organizer
  2018 IEEE International Electron Devices Meeting (IEDM 2018)
- Invited
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] ふり返るにはまだ早い2018
- Author(s)
  鳥海明
- Organizer
  第65回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] Impact of “struggle for oxygen” at oxidized interface on SiGe gate stacks2018
- Author(s)
  X. Li, Y. Noma, W. Song, T. Nishimura, and A. Toriumi
- Organizer
  SSDM2018
- Invited
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] Recent achievements and remaining challenges in Ge-MOSFETs from interface2018
- Author(s)
  A. Toriumi
- Organizer
  ICSICT 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] Why don’t you enjoy Ge CMOS more2018
- Author(s)
  鳥海明
- Organizer
  第65回応用物理学会春季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] Ge酸化に伴う表面平坦性の劣化と酸化機構の変化2017
- Author(s)
  竹村千里、柴山茂久、西村知紀、矢嶋赳彬、鳥海明
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] "Relationship between initial properties and reliability of Ge gate stacks"2017
- Author(s)
  Tang Xiaoyu, 鳥海明
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜 (神奈川県横浜市)
- Year and Date
  2017-03-16
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] Impact of reaction kinetics at GeO2/Si for highperformance SiGe gate stacks2017
- Author(s)
  W. Song, A. Toriumi
- Organizer
  SSDM2017
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] "Atomic exchange between Ge and Si at GeO2/Si interface"2017
- Author(s)
  宋宇振, 鳥海明
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜 (神奈川県横浜市)
- Year and Date
  2017-03-16
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] SiGeの熱酸化によって界面に形成されるGe層の析出機構2017
- Author(s)
  野間勇祐、宋宇振、西村知紀、矢嶋赳彬、鳥海明
- Organizer
  第65回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] "Study of Thermal Oxidation Mechanism of Germanium"2017
- Author(s)
  Wang Xu, 西村知紀, 矢嶋赳彬, 鳥海明
- Organizer
  第64回応用物理学会春季学術講演会
- Place of Presentation
  パシフィコ横浜 (神奈川県横浜市)
- Year and Date
  2017-03-17
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] Role of Y-doping into GeO2 in Ge gate stack reliability2017
- Author(s)
  X. Tang and A. Toriumi
- Organizer
  SSDM2017
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] Ge for CMOS applications2017
- Author(s)
  A. Toriumi
- Organizer
  INFOS 2017
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] Materials fundamentals for germanium CMOS2017
- Author(s)
  A. Toriumi
- Organizer
  The 1st International Semiconductor Conference for Global Challenges (ISCGC 2017)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] Interface Control for High Performance N-Channel Ge FETs2017
- Author(s)
  A. Toriumi
- Organizer
  232nd ECS Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] A new kinetic model for thermal oxidation of Ge2017
- Author(s)
  X. Wang, T. Nishimura, T. Yajima, A. Toriumi
- Organizer
  SSDM2017
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] 「界面ダイポール密度の制御による金属/Ge界面のフェルミレベルピンニング緩和の試み」2016
- Author(s)
  西村知紀、矢嶋赳彬、鳥海明
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学（東京都・目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 「知っておくと得するｹﾞﾙﾏﾆｳﾑ制御の三つの基本」2016
- Author(s)
  鳥海　明
- Organizer
  電子デバイス界面テクノロジー研究会（第21回）
- Place of Presentation
  東レ研修センター（静岡県・三島市）
- Year and Date
  2016-01-22
- Invited
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 「Geにおける正孔と電子のフォノン周波数に対する影響の違い」2016
- Author(s)
  株柳翔一、西村知紀、矢嶋赳彬、鳥海明
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学（東京都・目黒区）
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "GeO2 reduction and Si oxidation at SiGe/GeO2 interface in UHV annealing"2016
- Author(s)
  宋宇振, 鳥海明
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ、新潟市　新潟県
- Year and Date
  2016-09-15
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] "Random telegraphic signals observed in atomically thin MoS2 FETs"2016
- Author(s)
  A. Toriumi, N. Fang and K. Nagashio
- Organizer
  5th International Symposium on Graphene Devices(ISGD 5)
- Place of Presentation
  Brisbane (Australia)
- Year and Date
  2016-07-11
- Invited
- Data Source
  KAKENHI-PROJECT-15K13941
[Presentation] "Characterization of defects in Ge substrates using deep-level transient spectroscopy (DLTS)"2016
- Author(s)
  H. Ikegaya, T. Nishimura, and A. Toriumi
- Organizer
  9th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration
- Place of Presentation
  東北大学（宮城県・仙台市）
- Year and Date
  2016-01-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Materials And Process Controls For Scalable and Reliable Germanium Gate Stacks"2016
- Author(s)
  Akira. Toriumi
- Organizer
  The IEEE 13th International Conference on Solid-State and Integrated Circuit Technology (2016 ICSICT)
- Place of Presentation
  Hangzhou (China)
- Year and Date
  2016-10-27
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] "Defect position analysis in MoS2 FETs by random telegraphic signals"2016
- Author(s)
  方楠、長汐晃輔、鳥海明
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学（東京都　目黒区）
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15K13941
[Presentation] "Experimental and Thermodynamic Investigation of SiGe Oxidation and GeO Desorption for Controlled SiGe Gate Stack Formation"2016
- Author(s)
  Woojin Song, Akira Toriumi
- Organizer
  7th International Symposium on Control of Semiconductor Interfaces(ISCSI-VII)/International SiGe Technology and Device Meeting(ISTDM 2016)
- Place of Presentation
  名古屋大学野依記念学術交流館 (愛知県名古屋市）
- Year and Date
  2016-06-10
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] "Oxygen-bond switching at GeO2/Si interface in UHV annealing"2016
- Author(s)
  Woojin Song, Akira. Toriumi
- Organizer
  47th IEEE Semiconductor Interface Spesialists Congerence(SISC)
- Place of Presentation
  San Diego (USA)
- Year and Date
  2016-12-09
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-16H02331
[Presentation] 「イオン注入操作によって単結晶ゲルマニウム中に生じる欠陥のDLTSによる解析」2016
- Author(s)
  池谷大樹、西村知紀、矢嶋赳彬、鳥海明
- Organizer
  第63回応用物理学会春季学術講演会
- Place of Presentation
  東京工業大学（東京都・目黒区）
- Year and Date
  2016-03-20
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Study of Raman Peak Shift in Heavily Doped Germanium - A new research opportunity using ultra-thin GeOI"2015
- Author(s)
  Shoichi Kabuyanagi, Tomonori Nishimura, Takeaki Yajima, and Akira Toriumi
- Organizer
  8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar
- Place of Presentation
  TOHOKU University (Miyagi,Sendai)
- Year and Date
  2015-01-29
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Materials and Process Controls in Germanium Gate Stacks"2015
- Author(s)
  A. Toriumi
- Organizer
  46th IEEE Semiconductor Interface Specialists Conference(SISC)
- Place of Presentation
  Arlington, VA (USA)
- Year and Date
  2015-12-04
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Effects of free-carriers on rigid band and bond descriptions in germanium - Key to designing and modeling in Ge nano-devices -"2015
- Author(s)
  S. Kabuyanagi, and A. Toriumi
- Organizer
  2015 IEEE International Electron Devices Meeting(IEDM)
- Place of Presentation
  Washington D.C. (USA)
- Year and Date
  2015-12-09
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Dielectric Film Engineering for Ge-rich SiGe MOS Gate Stacks"2015
- Author(s)
  C-T. Chang, T. Nishimura and A. Toriumi
- Organizer
  8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar
- Place of Presentation
  TOHOKU University (Miyagi,Sendai)
- Year and Date
  2015-01-29
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 「Design of High-k and Interfacial Layer on Germanium for 0.5nm EOT」2015
- Author(s)
  Cimang Lu, Choong Hyun Lee, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi
- Organizer
  2015 第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス（神奈川県・平塚市）
- Year and Date
  2015-03-14
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] "Structural coordination of rigidity with flexibility in gate dielectric films for sub-nm EOT Ge gate stack reliability"2015
- Author(s)
  C. Lu, and A. Toriumi
- Organizer
  2015 IEEE International Electron Devices Meeting(IEDM)
- Place of Presentation
  Washington D.C. (USA)
- Year and Date
  2015-12-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 「Non-destructive Characterization of Oxide/Ge Interface by Photoluminescence Measurement」2015
- Author(s)
  Shoichi Kabuyanagi, Tomonori Nishimura, Takeaki Yajima, Akira Toriumi
- Organizer
  2015 第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス（神奈川県　平塚市）
- Year and Date
  2015-03-12
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Impact of Hydrogen-induced Out-diffusion of Oxygen from Ge Surface on Junction Leakage and Electron Mobility in Ge n-MOSFETs"2015
- Author(s)
  C. H. Lee, T. Nishimura, C. Lu, S. Kabuyanagi, and A. Toriumi
- Organizer
  8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar
- Place of Presentation
  TOHOKU University (Miyagi,Sendai)
- Year and Date
  2015-01-29
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 「どこまでGe-CMOS技術は進んでいるのか - イントロダクション -」2015
- Author(s)
  鳥海　明
- Organizer
  第76回応用物理学会秋季学術講演会, シンポジウム（Ge-CMOSはどこまで進んでいるのか）
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2015-09-13
- Invited
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Effects of Ge Substrate Annealing in H2 on Electron Mobility and on Junction Leakage in n-Channel Ge Mosfets"2015
- Author(s)
  A. Toriumi, C. Lee, and T. Nishimura
- Organizer
  228th ECS Meeting
- Place of Presentation
  Phoenix, AZ (USA)
- Year and Date
  2015-10-14
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 「Critical Roles of Doped-Metal Cation in GeO2 for Gate Stack Formation on Ge」2015
- Author(s)
  Cimang Lu, Choong Hyun Lee, Tomonori Nishimura, Akira Toriumi
- Organizer
  第20回ゲートスタック研究会
- Place of Presentation
  東レ研修センター（静岡県・三島市）
- Year and Date
  2015-01-31
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] "H2 Annealing Effects of Ge Substrate both on Electron Mobility and on Junction Leakage in Ge n-MOSFETs"2015
- Author(s)
  A. Toriumi, C. H. Lee, and T. Nishimura
- Organizer
  The 2015 E-MRS Spring Meeting
- Place of Presentation
  Lille (France)
- Year and Date
  2015-05-14
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Thermodynamic Knob for High Performance SiGe Gate Stack Formation"2015
- Author(s)
  C.T. Chang, T. Nishimura, and A. Toriumi
- Organizer
  2015 International Conference on Solid State Devices and Materials(SSDM)
- Place of Presentation
  札幌コンベンションセンター（北海道・札幌市）
- Year and Date
  2015-09-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Direct Evidence of Defect-defect Correlation in Atomically Thin MoS2 Layer by Random Telegraphic Signals Observed in Back-gated FETs"2015
- Author(s)
  N.Fang, K.Nagashio, and A.Toriumi
- Organizer
  International Conference on Solid State Devices and Materials(SSDM2015)
- Place of Presentation
  札幌コンベンションセンター（北海道　札幌市）
- Year and Date
  2015-09-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13941
[Presentation] "Interface-aware high-k dielectric designing for deep sub-nm EOT Ge gate stack"2015
- Author(s)
  C. Lu, C. Lee, T. Nishimura, and A. Toriumi
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2015-09-14
- Invited
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Design and Demonstration of Reliability-Aware Ge Gate Stacks with 0.5 nm EOT"2015
- Author(s)
  C. Lu, C. H. Lee, T. Nishimura, and A. Toriumi
- Organizer
  2015 Symposium on VLSI Technology
- Place of Presentation
  リーガロイヤルホテル京都（京都府・京都市）
- Year and Date
  2015-06-16
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Observation of Plastic and Elastic Deformations in Ge Films of Bonded GeOI"2015
- Author(s)
  T. Nishimura, T. Nakamura, T. Yajima, and A. Toriumi
- Organizer
  2015 International Conference on Solid State Devices and Materials(SSDM)
- Place of Presentation
  札幌コンベンションセンター（北海道・札幌市）
- Year and Date
  2015-09-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 「n+Si/pGe Heterojunctions Fabricated by Narrow Membrane Bonding」2015
- Author(s)
  Chi Liu, Shoichi Kabuyanagi, Tomonori Nishimura, Akira Toriumi
- Organizer
  2015 第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス（神奈川県　平塚市）
- Year and Date
  2015-03-12
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Fabrication and Characterization of n+Si/pGe Heterojunctions by Narrow Membrane Bonding"2015
- Author(s)
  Tony C. Liu, Shoichi Kabuyanagi, Tomonori Nishimura, and Akira Toriumi
- Organizer
  8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar
- Place of Presentation
  TOHOKU University (Miyagi,Sendai)
- Year and Date
  2015-01-29
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 「電子濃度および界面の境界条件に強く依存したGeの電子構造」2015
- Author(s)
  株柳翔一, 西村知紀, 矢嶋赳彬, 鳥海明
- Organizer
  第20回ゲートスタック研究会
- Place of Presentation
  東レ研修センター（静岡県　三島市）
- Year and Date
  2015-01-31
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 「Phonon-softening in Germanium by Free Carrier Accumulation -Experimental Distinction between Impurity and Free Carrier Effect-」2015
- Author(s)
  Shoichi Kabuyanagi, Tomonori Nishimura, Takeaki Yajima, Akira Toriumi
- Organizer
  2015 第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス（神奈川県　平塚市）
- Year and Date
  2015-03-12
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Recent progress of Ge junction technology"2015
- Author(s)
  T. Nishimura, C. H. Lee, T. Nakamura, T. Yajima, K. Nagashio, K. Kita, and A. Toriumi
- Organizer
  15th International Workshop on Junction Technology (IWJT2015)
- Place of Presentation
  京都大学宇治キャンパス（京都府・宇治市）
- Year and Date
  2015-06-12
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Effect of Free Carrier Accumulation or Depletion on Zone-center Vibrational Mode in Ge"2015
- Author(s)
  S. Kabuyanagi, T. Nishimura, T. Yajima, and A. Toriumi
- Organizer
  2015 Silicon Nanoelectronics Workshop
- Place of Presentation
  リーガロイヤルホテル京都（京都府・京都市）
- Year and Date
  2015-06-15
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "How to secure both sufficient passivation and long term reliability in Ge gate stack -The key is to keep a proper network structure of oxides-"2015
- Author(s)
  C. Lu, T. Nishimura, and A. Toriumi
- Organizer
  第76回応用物理学会秋季学術講演会, シンポジウム（Ge-CMOSはどこまで進んでいるのか）
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2015-09-13
- Invited
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Preferential oxidation of Si in SiGe for shaping Ge-rich SiGe gate stacks"2015
- Author(s)
  C.T. Chang, and A. Toriumi
- Organizer
  2015 IEEE International Electron Devices Meeting(IEDM)
- Place of Presentation
  Washington D.C. (USA)
- Year and Date
  2015-12-08
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 「Design of High-k and Interfacial Layer on Germanium for 0.5nm EOT」2015
- Author(s)
  Cimang Lu, Choong Hyun Lee, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi
- Organizer
  2015 第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス（神奈川県　平塚市）
- Year and Date
  2015-03-14
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Gate-Bias Dependent Phonon Softening Observed in Ge Mosfets"2015
- Author(s)
  S. Kabuyanagi, T. Nishimura, T. Yajimia, and A. Toriumi
- Organizer
  228th ECS Meeting
- Place of Presentation
  Phoenix, AZ (USA)
- Year and Date
  2015-10-13
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 「Ge基板中酸素の役割-良いこと、悪いこと-」2015
- Author(s)
  鳥海　明
- Organizer
  NWDTF2015 in KOCHI
- Place of Presentation
  高知工科大学（高知県・高知市）
- Year and Date
  2015-12-19
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Direct Evidence of Freecarrier Induced Bandgap Narrowing in Ge"2015
- Author(s)
  S. Kabuyanagi, T. Nishimura, T. Yajimia, and A. Toriumi
- Organizer
  2015 International Conference on Solid State Devices and Materials(SSDM)
- Place of Presentation
  札幌コンベンションセンター（北海道・札幌市）
- Year and Date
  2015-09-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 「2-nm-EOT Y-Si-O Gate Stack Formation on Si0.5Ge0.5」2015
- Author(s)
  CheTsung Chang, Tomonori Nishimura, Akira Toriumi
- Organizer
  2015 第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス（神奈川県　平塚市）
- Year and Date
  2015-03-12
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 「Inspection of elastic stress and generated defects in thin Ge filmon GeOI wafer」2015
- Author(s)
  Toshimitsu Nakamura, Tomonori Nishimura, Takeaki Yajima, Akira Toriumi
- Organizer
  2015 第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス（神奈川県　平塚市）
- Year and Date
  2015-03-12
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 「Critical Roles of Doped-Metal Cation in GeO2 for Gate Stack Formation on Ge」2015
- Author(s)
  Cimang Lu, Choong Hyun Lee, Tomonori Nishimura, Akira Toriumi
- Organizer
  第20回ゲートスタック研究会
- Place of Presentation
  東レ研修センター（静岡県　三島市）
- Year and Date
  2015-01-31
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 「Reliability-aware Germanium Gate Stack Formation by GeO2 Network Modification」2015
- Author(s)
  Cimang Lu, Choong Hyun Lee, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi
- Organizer
  2015 第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス（神奈川県・平塚市）
- Year and Date
  2015-03-14
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] "Impact of Hydrogen-induced Out-diffusion of Oxygen from Ge Surface on Junction Leakage and Electron Mobility in Ge n-MOSFETs. "2015
- Author(s)
  C. H. Lee, T. Nishimura, C. Lu, S. Kabuyanagi, and A. Toriumi
- Organizer
  8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar
- Place of Presentation
  Tohoku University (Sendai, Miyagi)
- Year and Date
  2015-01-29
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] 「フリーキャリア密度に依存したGeの電子物性およびフォノン物性」2015
- Author(s)
  株柳翔一、西村知紀、矢嶋赳彬、鳥海明
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2015-09-16
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Opportunities of high performance Ge CMOS"2015
- Author(s)
  A. Toriumi
- Organizer
  Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors V
- Place of Presentation
  Lake Tahoe, California (USA)
- Year and Date
  2015-06-17
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 「Ge-CMOSのためのGeO2/Ge界面制御」2015
- Author(s)
  鳥海　明
- Organizer
  第76回応用物理学会秋季学術講演会, シンポジウム（越境する絶縁膜／半導体界面技術～ Si から Non-Si へ）
- Place of Presentation
  名古屋国際会議場（愛知県・名古屋市）
- Year and Date
  2015-09-14
- Invited
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Beyond GeO2 on Ge: Network Modification of GeO2 for Reliable Ge Gate Stacks"2015
- Author(s)
  C. Lu, C.H. Lee, T. Nishimura, and A. Toriumi
- Organizer
  2015 International Conference on Solid State Devices and Materials(SSDM)
- Place of Presentation
  札幌コンベンションセンター（北海道・札幌市）
- Year and Date
  2015-09-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 「1T-TaS2の相転移に対する温度およびゲートバイアス変調効果」2015
- Author(s)
  柴山茂久、方楠、矢嶋赳彬、西村知紀、長汐晃輔、鳥海明
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場（愛知県　名古屋市）
- Year and Date
  2015-09-15
- Data Source
  KAKENHI-PROJECT-15K13941
[Presentation] 「Reliability-aware Germanium Gate Stack Formation by GeO2 Network Modification」2015
- Author(s)
  Cimang Lu, Choong Hyun Lee, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi
- Organizer
  2015 第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学湘南キャンパス（神奈川県　平塚市）
- Year and Date
  2015-03-14
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] Surface Cleaning of (100) n-Ge by H2O2 Aqueous Solution2014
- Author(s)
  W. F. Zhang, C. M. Lu, C. H. Lee, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  2014年第74回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス(相模原)
- Year and Date
  2014-03-19
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] "Interface Friendly High-k Dielectrics for Sub-nm EOT Gate Stacks Formation on Germanium. "2014
- Author(s)
  C. Lu, C. H. Lee, T. Nishimura, and A. Toriumi
- Organizer
  2014 IEEE 45th SISC
- Place of Presentation
  San Diego (USA)
- Year and Date
  2014-12-13
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] "Impact of YScO3 on Ge Gate Stack in Terms of EOT Reduction as Well as Interface. "2014
- Author(s)
  C. Lu, C.H. Lee, T. Nishimura1,2, K. Nagashio and A. Toriumi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM 2014)
- Place of Presentation
  Tsukuba International Congress Center(Tsukuba, Ibaraki)
- Year and Date
  2014-09-11
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] TiO2チャネルTFTの電界効果移動度に対する表面・粒界吸着効果の重要性2014
- Author(s)
  矢嶋赳彬, 小池豪, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2014年第74回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス(神奈川県)
- Year and Date
  2014-03-20
- Data Source
  KAKENHI-PROJECT-24656200
[Presentation] "Interface Friendly High-k Dielectrics for Sub-nm EOT Gate Stacks Formation on Germanium"2014
- Author(s)
  C. Lu, C. H. Lee, T. Nishimura, and A. Toriumi
- Organizer
  2014 IEEE 45th SISC
- Place of Presentation
  San Diego （USA）
- Year and Date
  2014-12-13
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] Network modification of GeO2 by trivalent metal oxide doping2014
- Author(s)
  C. Lu, C. H. Lee, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  2014年第74回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス(相模原)
- Year and Date
  2014-03-20
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] 「Improvement of High-Ns Electron Mobility in Ge n-MOSFETs with Atomically Flat GeO2/Ge Interface」2014
- Author(s)
  李忠賢, 西村　知紀、魯　辞莽、張　文峰、長汐　晃輔、鳥海　明
- Organizer
  2014年　第74回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス（神奈川県　相模原市）
- Year and Date
  2014-03-20
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 「Conduction Band Tail States at GeO2/Ge Interface Probed by InternalPhotoemission Spectroscopy」2014
- Author(s)
  W.F. Zhang, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  2014年　第74回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス（神奈川県　相模原市）
- Year and Date
  2014-03-19
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] Mobility Enhancement in TiO2-Channel TFTs by Decreasing in-gap states in the Film and Mitigating Grain Boundary Adsorption2014
- Author(s)
  矢嶋赳彬，小池豪，西村知紀，長汐晃輔，鳥海明
- Organizer
  第74回応用物理学会春期学術講演
- Place of Presentation
  青山学院大学，神奈川
- Data Source
  KAKENHI-PROJECT-24656200
[Presentation] "Thermally Robust CMOS-aware Ge MOSFETs with High Mobility at High-carrier Densities on a Single Orientation Ge Substrate"2014
- Author(s)
  C. H. Lee, C. Lu, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  Symposium on VLSI Technology (VLSI)
- Place of Presentation
  Hawaii　（USA）
- Year and Date
  2014-06-11
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] Mobility Enhancement in TiO2 Channel TFTs by Decreasing In-Gap States in The Film and Mitigating Grain Boundary Adsorption2014
- Author(s)
  矢嶋赳彬, 小池豪, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2014年第74回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス(神奈川県)
- Year and Date
  2014-03-20
- Data Source
  KAKENHI-PROJECT-24656200
[Presentation] "High electron mobility n-channel Ge MOSFETs with sub-nm EOT"2014
- Author(s)
  A. Toriumi, C. H. Lee, C. Lu, and T. Nishimura
- Organizer
  International SiGe Technology and Device Meeting (ISTDM)
- Place of Presentation
  Singapore
- Year and Date
  2014-06-02
- Invited
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Advanced Gate Stacks on Column IV Semiconductors from Materials Perspective"2014
- Author(s)
  A. Toriumi
- Organizer
  International Conference on IC Design and Technology (ICICDT 2014)
- Place of Presentation
  Austin (USA)
- Year and Date
  2014-05-28
- Invited
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Defect Generation in Mono-layer Graphene in O2-PDA and FGA. "2014
- Author(s)
  W.J. Liu, K. Nagashio, T. Nishimura, and A. Toriumi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM 2014)
- Place of Presentation
  Tsukuba International Congress Center(Tsukuba, Ibaraki)
- Year and Date
  2014-09-10
- Data Source
  KAKENHI-PROJECT-12F02364
[Presentation] "Dramatic Effects of Hydrogen-induced Out-diffusion of Oxygen from Ge Surface on Junction Leakage as well as Electron Mobility in n-channel Ge MOSFETs"2014
- Author(s)
  C. H. Lee, T. Nishimura, C. Lu, S. Kabuyanagi and A. Toriumi
- Organizer
  IEDM 2014
- Place of Presentation
  San Francisco (USA)
- Year and Date
  2014-12-17
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] Thermodynamic selection of the desirable doping materials in GeO22014
- Author(s)
  C. Lu, C. H. Lee, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  2014年第74回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス(相模原)
- Year and Date
  2014-03-20
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] Record-high Electron Mobility in Sub-nm EOT Ge n-MOSFETs with Y-dooed GeO2 Interfacial Layer2014
- Author(s)
  李忠賢, 魯辞莽, 張文峰, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2014年第74回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス(相模原)
- Year and Date
  2014-03-20
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] 「Multiple Origins of Direct-gap Modulation in Ultra-thin Highly-doped GeOI」2014
- Author(s)
  株柳翔一, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2014年　第74回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス（神奈川県　相模原市）
- Year and Date
  2014-03-20
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] TiO2チャネルTFTの電界効果移動度に対する表面・粒界吸着効果の重要性2014
- Author(s)
  矢嶋赳彬，小池豪，西村知紀，長汐晃輔，鳥海明
- Organizer
  第74回応用物理学会春期学術講演
- Place of Presentation
  青山学院大学，神奈川
- Data Source
  KAKENHI-PROJECT-24656200
[Presentation] "Origin of Self-limiting Oxidation of Ge in High-Pressure O2 at Low Temperature. "2014
- Author(s)
  C.H. Lee, T. Nishimura1,2, K. Nagashio and A. Toriumi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM 2014)
- Place of Presentation
  Tsukuba International Congress Center(Tsukuba, Ibaraki)
- Year and Date
  2014-09-11
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] "Merits and demerits of H2-annealing in GeO2/Ge gate stacks. "2014
- Author(s)
  T. Nishimura, S. Kabuyanagi, C. H. Lee, T. Yajima, K. Nagashio, and A. Toriumi
- Organizer
  JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-large Scale Integration
- Place of Presentation
  Leuven (Belgium)
- Year and Date
  2014-11-13
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] 界面制御に依るVO2極薄膜の相転移温度変調2014
- Author(s)
  矢嶋赳彬, 二宮裕磨, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2014年第74回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス(神奈川県)
- Year and Date
  2014-03-18
- Data Source
  KAKENHI-PROJECT-24656200
[Presentation] エピタキシャルVO2薄膜中の転移応力に起因する不均質な電子層ドメイン構造2014
- Author(s)
  二宮裕磨、矢嶋赳彬、西村知紀、長汐晃輔、鳥海明
- Organizer
  第74回応用物理学会春期学術講演会
- Place of Presentation
  青山学院大学，神奈川
- Data Source
  KAKENHI-PROJECT-24656200
[Presentation] 「Record-high Electron Mobility in Sub-nm EOT Ge n-MOSFETs with Y-doped GeO2 Interfacial Layer」2014
- Author(s)
  李忠賢,魯　辞莽、張　文峰、西村　知紀、長汐　晃輔、鳥海　明
- Organizer
  2014年　第74回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス（神奈川県　相模原市）
- Year and Date
  2014-03-20
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 「Electron Mobility and Leakage Current in Double-gated Ge Junctionless n-MOSFETs」2014
- Author(s)
  株柳翔一, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2014年　第74回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス（神奈川県　相模原市）
- Year and Date
  2014-03-20
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 「Pをイオン注入したGeにおける不純物活性化と結晶性の回復過程」2014
- Author(s)
  中村俊允、西村友紀、長汐晃輔、鳥海明
- Organizer
  2014年　第74回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス（神奈川県　相模原市）
- Year and Date
  2014-03-20
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 「Thermodynamic selection of the desirable doping materials in GeO2」2014
- Author(s)
  C. Lu, C. H. Lee, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  2014年　第74回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス（神奈川県　相模原市）
- Year and Date
  2014-03-20
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] Selection of desirable trivalent metal oxides as doping material into GeO22014
- Author(s)
  C. Lu, C. H. Lee, W. Zhang, T. Nishimura, K. Nagashio and A. Toriumi
- Organizer
  7th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  東北大学、宮城県
- Year and Date
  2014-01-27
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] 「Surface Cleaning of (100) n-Ge by H2O2 Aqueous Solution 」2014
- Author(s)
  W.F. Zhang, C.M. Lu, C.H. Lee, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  2014年　第74回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス（神奈川県　相模原市）
- Year and Date
  2014-03-19
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 「Network modification of GeO2 by trivalent metal oxide doping」2014
- Author(s)
  C. Lu, C. H. Lee, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  2014年　第74回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス（神奈川県　相模原市）
- Year and Date
  2014-03-20
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Atomic-scale planarization of Ge (111), (110) and (100) surfaces"2014
- Author(s)
  T. Nishimura, C. Lee, T. Yajima, K. Nagashio, and A. Toriumi
- Organizer
  International SiGe Technology and Device Meeting (ISTDM)
- Place of Presentation
  Singapore
- Year and Date
  2014-06-03
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] Enhancement of High-Ns Electron Mobility in Ge (111) n-MOSFETs by the Formation of Atomically Flat GeO2/Ge Interface2014
- Author(s)
  C. H. Lee, T. Nishimura, C. Lu, W. F. Zhang, K. Nagashio, and A. Toriumi
- Organizer
  7th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  東北大学、宮城県
- Year and Date
  2014-01-27
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] "Merits and demerits of H2-annealing in GeO2/Ge gate stacks"2014
- Author(s)
  T. Nishimura, S. Kabuyanagi, C. H. Lee, T. Yajima, K. Nagashio, and A. Toriumi
- Organizer
  JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-large Scale Integration
- Place of Presentation
  Leuven　（Belgium）
- Year and Date
  2014-11-13
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] Defect generation in mono-and bi-layer graphene in O2 annealing2014
- Author(s)
  W. J. Liu, K. Nagashio, A. Toriumi
- Organizer
  2014年第74回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス(神奈川県)
- Year and Date
  2014-03-19
- Data Source
  KAKENHI-PROJECT-12F02364
[Presentation] "Be more positive about Ge FETs"2014
- Author(s)
  A. Toriumi
- Organizer
  AWAD 2014
- Place of Presentation
  Kanazawa Bunka Hall (Ishikawa, Kanazawa)
- Year and Date
  2014-07-03
- Invited
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] " Thermally Robust CMOS-aware Ge MOSFETs with High Mobility at High-carrier Densities on a Single Orientation Ge Substrate"2014
- Author(s)
  C. H. Lee, C. Lu, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  Symposium on VLSI Technology (VLSI)
- Place of Presentation
  Honolulu (USA)
- Year and Date
  2014-06-11
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] Improvement of High-Ns Electron Mobility in Ge n-MOSFETs with Atomically Flat GeO2/Ge Interface2014
- Author(s)
  李忠賢, 西村知紀, 魯辞莽, 張文峰, 長汐晃輔, 鳥海明
- Organizer
  2014年第74回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス(相模原)
- Year and Date
  2014-03-20
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] "High Electron Mobility n-Channel Ge MOSFETs with Sub-Nm EOT"2014
- Author(s)
  A. Toriumi, C. Lee, C. Lu, and T. Nishimura
- Organizer
  ECS　226th　Meeting
- Place of Presentation
  Cuncun　（Mexico）
- Year and Date
  2014-10-06
- Invited
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Dramatic Effects of Hydrogen-induced Out-diffusion of Oxygen from Ge Surface on Junction Leakage as well as Electron Mobility in n-channel Ge MOSFETs. "2014
- Author(s)
  C. H. Lee, T. Nishimura, C. Lu, S. Kabuyanagi and A. Toriumi
- Organizer
  IEDM 2014
- Place of Presentation
  San Francisco (USA)
- Year and Date
  2014-12-17
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] 界面制御によるVO2薄膜の相転移温度変調2014
- Author(s)
  矢嶋赳彬、二宮裕磨、西村知紀、長汐晃輔、鳥海明
- Organizer
  第74回応用物理学会春期学術講演会
- Place of Presentation
  青山学院大学，神奈川
- Data Source
  KAKENHI-PROJECT-24656200
[Presentation] エピタキシャルVO2薄膜中の転移応力に起因する不均質な電子相ドメイン構造2014
- Author(s)
  二宮裕磨, 矢嶋赳彬, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2014年第74回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学相模原キャンパス(神奈川県)
- Year and Date
  2014-03-18
- Data Source
  KAKENHI-PROJECT-24656200
[Presentation] " Significant enhancement of High-Ns Electron Mobility in Ge n-MOSFETs with Atomically Flat Ge/GeO2 Interface"2014
- Author(s)
  C. H. Lee, T. Nishimura, C. Lu, W. Zhang, K. Nagashio, and A. Toriumi
- Organizer
  The 225th Electrochemical Society Meeting (ECS)
- Place of Presentation
  Orlando (USA)
- Year and Date
  2014-05-13
- Invited
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] 「Atomically Flat Planarization of Ge (110) and (100) Surface by H2 Annealing」2013
- Author(s)
  西村知紀, 矢嶋赳彬, 長汐晃輔, 鳥海明
- Organizer
  2013年　第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス（京都府, 京田辺市）
- Year and Date
  2013-09-17
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Enhancement of High-Ns Electron Mobility in Sub-nm EOT Ge n-MOSFETs"2013
- Author(s)
  C.H. Lee, C. Lu, T. Tabata, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  2013 Symposia on VLSI Technology
- Place of Presentation
  Rihga Royal Hotel (Kyoto, Kyoto)
- Year and Date
  2013-06-11
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 酸素雰囲気熱処理によるTiO2チャネルTFT閾値電圧の大幅減少2013
- Author(s)
  小池豪, 矢嶋赳彬, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2013年第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学(神奈川県)
- Year and Date
  2013-03-29
- Data Source
  KAKENHI-PROJECT-24656200
[Presentation] "Atomically Flat Germanium (111) Surface by Hydrogen Annealing"2013
- Author(s)
  T. Nishimura, S. Kabuyanagi, C. H. Lee, T. Yajima, K. Nagashio, and A. Toriumi
- Organizer
  224th ECS Meeting
- Place of Presentation
  San Francisco (USA)
- Year and Date
  2013-10-29
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 「Oxygen Potential Lowering in N-doped GeO2 for Ge MIS Gate Stack Design in Extremely Thin EOT Region 」2013
- Author(s)
  田畑俊行, 李忠賢, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2013年　第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス（京都府, 京田辺市）
- Year and Date
  2013-09-17
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Oxygen Potential Engineering of Interfacial Layer for Deep Sub-nm EOT High-k Gate Stacks on Ge"2013
- Author(s)
  C.-H. Lee, C. Lu, T. Tabata, W. Zhang, T. Nishimura, K. Nagashio, A. Toriumi
- Organizer
  IEEE International Electron Device Meeting (IEDM)
- Place of Presentation
  Washington DC (USA)
- Year and Date
  2013-12-09
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 相選択エッチングによる100nm幅VO2ナノワイヤの作製2013
- Author(s)
  矢嶋赳彬、二宮裕磨、西村知紀、長汐晃輔、鳥海明
- Organizer
  第74回応用物理学会秋期学術講演会
- Place of Presentation
  同志社大，京都
- Data Source
  KAKENHI-PROJECT-24656200
[Presentation] 相選択エッチングによる100nm幅VO2ナノワイヤの作製2013
- Author(s)
  矢嶋赳彬, 二宮裕磨, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス(京都府)
- Year and Date
  2013-09-16
- Data Source
  KAKENHI-PROJECT-24656200
[Presentation] "Reconsideration of Electron Mobility in Ge n-MOSFETs from Ge Substrate Side -Atomically Flat Surface Formation, Layer-by-Layer Oxidation, and Dissolved Oxygen Extraction-"2013
- Author(s)
  C.H. Lee, T. Nishimura, T.Tabata, C. Lu, W. Zhang, K. Nagashio, A. Toriumi
- Organizer
  IEEE International Electron Device Meeting (IEDM)
- Place of Presentation
  Washington DC (USA)
- Year and Date
  2013-12-09
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] High-mobility TiO2-channel TFTs with Optimized Anatase Microstructures2013
- Author(s)
  T. Yajima, G. Oike, T. Nishimura, K. Nagashio and A. Toriumi
- Organizer
  International Conference on Solid-state Devices and Materials
- Place of Presentation
  Hilton Fukuoka Sea Hawk , Fukuoka
- Data Source
  KAKENHI-PROJECT-24656200
[Presentation] アナターゼ結晶相の微細構造制御によるTiO2チャネルTFTの高移動度化2013
- Author(s)
  矢嶋赳彬, 小池豪, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2013年第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学(神奈川県)
- Year and Date
  2013-03-29
- Data Source
  KAKENHI-PROJECT-24656200
[Presentation] Effects of the Interface-related and Bulk-fixed Charges in Ge/GeO2 Stack on Band Bending of Ge Studied by X-ray Photoemission Spectroscopy2013
- Author(s)
  W. F. Zhang, C. H. Lee, C. M. Lu, T. Nishimura, K. Nagashio, K. Kita and A. Toriumi
- Organizer
  2013 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  ヒルトン福岡シーホーク(福岡)
- Year and Date
  2013-09-26
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] "Effects of the Interface-related and Bulk-fixed Charges in Ge/GeO2 Stack on Band Bending of Ge Studied by X-ray Photoemission Spectroscopy"2013
- Author(s)
  W.F. Zhang, C.H. Lee, C.M. Lu, T. Nishimura, K. Nagashio, K. Kita and A. Toriumi
- Organizer
  2013 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  Hilton Fukuoka Sea Hawk (Fukuoka, Fukuoka)
- Year and Date
  2013-09-26
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Charge neutrality level shift in the Bardeen limit of Fermi-level pinning at atomically flat Ge/metal interface"2013
- Author(s)
  T. Nishimura, T. Nakamura, T. Yajima, K. Nagashio and A.Toriumi
- Organizer
  2013 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  Hilton Fukuoka Sea Hawk (Fukuoka, Fukuoka)
- Year and Date
  2013-09-26
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] Atomically Flat Germanium (111) Surface by Hydrogen Annealing2013
- Author(s)
  T. Nishimura, S. Kabuyanagi C. H. Lee, T. Yajima, K. Nagashio, and A. Toriumi
- Organizer
  224th ECS Meeting
- Place of Presentation
  サンフランシスコ、USA
- Year and Date
  2013-10-29
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] "Effects of PDA Ambient on Leakage Current in Poly-Ge TFTs"2013
- Author(s)
  S. Kabuyanagi, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  ICSI-8 and ISCSI-VI
- Place of Presentation
  Kyushu University School of Medicine (Fukuoka, Fukuoka)
- Year and Date
  2013-06-03
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] Ion Implantation-Induced Defects Generated in PN Junction For mation of Germanium2013
- Author(s)
  C. H. Lee, T. Nishimura, T., Tabata, K. Nagashio, and A. Toriumi
- Organizer
  ICSI-8 and ISCSI-VI
- Place of Presentation
  九州大学(福岡)
- Year and Date
  2013-06-03
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] Effect of Oxygen Potential Lowering in N-doped GeO2 on Suppression of GeO Desorption and Planarization of Ge Interface2013
- Author(s)
  T. Tabata, C. H. Lee, T. Nishimura, K. Nagashio and A. Toriumi
- Organizer
  2013 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  ヒルトン福岡シーホーク(福岡)
- Year and Date
  2013-09-06
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] 「多結晶Ge薄膜トランジスタの電気特性に及ぼす水素および酸素の影響」2013
- Author(s)
  株柳翔一, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2013年　第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス（京都府, 京田辺市）
- Year and Date
  2013-09-18
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] High-Mobility TiO2-Channel TFTs with Optimized Anatase Microstructures2013
- Author(s)
  T. Yajima, G. Oike, T. Nishimura, K. Nagashio and A. Toriumi
- Organizer
  2013 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  Hilton Fukuoka Sea Hawk(Fukuoka)
- Year and Date
  2013-09-26
- Data Source
  KAKENHI-PROJECT-24656200
[Presentation] Significant Enhancement of High-Ns electron mobility in Ge n-MOSFETs2013
- Author(s)
  李忠賢, 魯辞莽, 田畑俊行, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス(京都))
- Year and Date
  2013-09-17
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] Significant Conductivity Enhancement of TiO2 Films by Both Field Effect and Chemical Doping2013
- Author(s)
  G. Oike, T. Yajima, T. Nishimura, K. Nagashio and A. Toriumi
- Organizer
  2013 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  Hilton Fukuoka Sea Hawk(Fukuoka)
- Year and Date
  2013-09-26
- Data Source
  KAKENHI-PROJECT-24656200
[Presentation] Arスパッタによって形成されたHfO2薄膜中のArが結晶化相変態に与える影響2013
- Author(s)
  岩井貴雅, 矢嶋赳彬, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第18回研究会)
- Place of Presentation
  ニューウェルシティ湯河原(神奈川県)
- Year and Date
  2013-01-25
- Data Source
  KAKENHI-PROJECT-24656200
[Presentation] "Ion Implantation-Induced Defects Generated in PN Junction Formation of Germanium"2013
- Author(s)
  C. H. Lee, T. Nishimura, T. Tabata, K. Nagashio, and A. Toriumi
- Organizer
  ICSI-8 and ISCSI-VI
- Place of Presentation
  Kyushu University School of Medicine (Fukuoka, Fukuoka)
- Year and Date
  2013-06-03
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] Ultra-thin GeO2 Formation by Oxygen Radicals (0*) for Advanced Ge Gate Stacks - Reaction kinetics, film quality and MIS characteristics -2013
- Author(s)
  W. J. Song, W. F. Zhang, C. H. Lee, T. Nishimura, and A. Toriumi
- Organizer
  2013 Silicon Nanoelectronics Workshop
- Place of Presentation
  リーガロイヤルホテル京都(京都)
- Year and Date
  2013-06-09
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] "Thermodynamic consideration and experimental demonstration for solving the problems of GeO2 solubility in H2O and GeO desorption from GeO2/Ge"2013
- Author(s)
  C. Lu, C.H. Lee, W.F.Zhang, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  2013 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  Hilton Fukuoka Sea Hawk (Fukuoka, Fukuoka)
- Year and Date
  2013-09-26
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Study of Strong Fermi Level Pinning at Metal/Germanium Interface Based on the Impact of Ultra-thin Insulator Insertion"2013
- Author(s)
  T. Nishimura, T. Nakamura, and A. Toriumi
- Organizer
  ICSI-8 and ISCSI-VI
- Place of Presentation
  Kyushu University School of Medicine (Fukuoka, Fukuoka)
- Year and Date
  2013-06-04
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] cubic相HfO2薄膜の室温における安定化機構の検討2013
- Author(s)
  岩井貴雅, 矢嶋赳彬, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2013年第60回応用物理学会春季学術講演会
- Place of Presentation
  神奈川工科大学(神奈川県)
- Year and Date
  2013-03-28
- Data Source
  KAKENHI-PROJECT-24656200
[Presentation] High Electron Mobility (>16 cm2/Vsec) FETs with High On/Off Ratio (>106) and Highly Conductive Films (σ>102 S cm) by Chemical Doping in Very Thin (~20 nm) TiO2 Films on Thermally Grown SiO22013
- Author(s)
  G. Oike, T. Yajima, T. Nishimura, K. Nagashio, A. Toriumi
- Organizer
  IEDM 2013
- Place of Presentation
  Washington DC, USA.
- Year and Date
  2013-12-10
- Data Source
  KAKENHI-PROJECT-24656200
[Presentation] "Demonstration of High Electron Mobility in Germanium n-channel Junctionless FETs"2013
- Author(s)
  S. Kabuyanagi, T. Nishimura, K.Nagashio and A.Toriumi
- Organizer
  2013 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  Hilton Fukuoka Sea Hawk (Fukuoka, Fukuoka)
- Year and Date
  2013-09-27
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Layer-by-Layer GeO2 Formation in the Self-Limited Oxidation Regime of Ge"2013
- Author(s)
  C.H. Lee, T. Nishimura, T. Tabata, K. Nagashio, and A. Toriumi
- Organizer
  2013 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  Hilton Fukuoka Sea Hawk (Fukuoka, Fukuoka)
- Year and Date
  2013-09-26
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] Enhancement of High-Ns Electron Mobility in Sub-nm EOT Ge n-MOSFETs2013
- Author(s)
  C. H. Lee, C. Lu, T. Tabata, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  2013 Silicon Nanoelectronics Workshop
- Place of Presentation
  リーガロイヤルホテル京都(京都
- Year and Date
  2013-06-11
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] High Mobility Polycrystalline TiO2-Channel Field Effect Transistor2013
- Author(s)
  T. Yajima, G. Oike, T. Nishimura, K. Nagashio and A. Toriumi
- Organizer
  Workshop on Oxide Electronics20
- Place of Presentation
  Singapore
- Year and Date
  2013-09-24
- Data Source
  KAKENHI-PROJECT-24656200
[Presentation] High mobility Polyrystalline TiO2 Channel Field Effect Transistor2013
- Author(s)
  T. Yajima, G. Oike, T. Nishimura， K. Nagashio, A. Toriumi
- Organizer
  Workshop on Oxide Electronics 20 (WOE20)
- Place of Presentation
  National University, Singapore
- Data Source
  KAKENHI-PROJECT-24656200
[Presentation] "High Electron Mobility in Germanium Junctionless n-MOSFETs"2013
- Author(s)
  Shoichi Kabuyanagi, Tomonori Nishimura, Kosuke Nagashio and Akira Toriumi
- Organizer
  224th ECS Meeting
- Place of Presentation
  San Francisco (USA)
- Year and Date
  2013-10-30
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] Singnificant Conductivity Enhancement of TiO2 Films by Both Field Effect and Chemical Doping2013
- Author(s)
  G. Oike, T. Yajima, T. Nishimura, K. Nagashio and A. Toriumi
- Organizer
  International Conference on Solid-state Devices and Materials
- Place of Presentation
  Hilton Fukuoka Sea Hawk , Fukuoka
- Data Source
  KAKENHI-PROJECT-24656200
[Presentation] TiO2チャネルTFT特性に及ぼす酸素雰囲気熱処理の特異な効果2013
- Author(s)
  小池豪, 矢嶋赳彬, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第18回研究会)
- Place of Presentation
  ニューウェルシティ湯河原(神奈川県)
- Year and Date
  2013-01-25
- Data Source
  KAKENHI-PROJECT-24656200
[Presentation] Layer-by-Layer GeO2 Formation in the Self-Limited Oxidation Regime of Ge2013
- Author(s)
  C. H. Lee, T. Nishimura, T. Tabata, K. Nagashio, and A. Toriumi
- Organizer
  2013 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  ヒルトン福岡シーホーク(福岡)
- Year and Date
  2013-09-26
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] Thermodynamic consideration and experimental demonstration for solving the problems of GeO2 solubility in H2O and GeO desorption from GeO2/Ge2013
- Author(s)
  C. Lu, C. H. Lee, W. F. Zhang, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  2013 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  ヒルトン福岡シーホーク(福岡)
- Year and Date
  2013-09-26
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] Y ドープGeO2 界面層のY 濃度に依存した界面酸化膜形成2013
- Author(s)
  Lu Cimang, 李忠賢, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス(京都))
- Year and Date
  2013-09-17
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] High Electron Mobility (>16 cm2/Vsec) FETs with High On/Off Ratio (>106)2013
- Author(s)
  G. Oike, T. Yajima, T. Nishimura, K. Nagashio and A. Toriumi
- Organizer
  International Electron Device Meeting　(IEDM)
- Place of Presentation
  Wshington.D.C, USA
- Data Source
  KAKENHI-PROJECT-24656200
[Presentation] 「Y ドープGeO2 界面層のY 濃度に依存した界面酸化膜形成」2013
- Author(s)
  Lu Cimang, 李忠賢, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2013年　第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス（京都府, 京田辺市）
- Year and Date
  2013-09-17
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "High performance Ge n- and p-MOSFETs for advanced CMOS"2013
- Author(s)
  A. Toriumi, C. H. Lee, T. Tabata, and T. Nishimura
- Organizer
  E-MRS 2013 SPRING MEETING
- Place of Presentation
  Strasbourg (France)
- Year and Date
  2013-05-27
- Invited
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Ultra-thin GeO2 Formation by Oxygen Radicals (O*) for Advanced Ge Gate Stacks - Reaction kinetics, film quality and MIS characteristics -"2013
- Author(s)
  W. J. Song, W. F. Zhang, C. H. Lee, T. Nishimura, and A. Toriumi
- Organizer
  2013 Silicon Nanoelectronics Workshop
- Place of Presentation
  Rihga Royal Hotel (Kyoto, Kyoto)
- Year and Date
  2013-06-09
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 「Significant Enhancement of High-Ns electron mobility in Ge n-MOSFETs」2013
- Author(s)
  李忠賢, 魯辞莽, 田畑俊行, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2013年　第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス（京都府, 京田辺市）
- Year and Date
  2013-09-17
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] High performance Ge n- and p-MOSFETs for advanced CMOS2013
- Author(s)
  A. Toriumi, C. H. Lee, T. Tabata, and T. Nishimura
- Organizer
  E-MRS 2013 SPRING MEETING
- Place of Presentation
  Strasbourg, France
- Year and Date
  2013-05-27
- Invited
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] "Effect of Oxygen Potential Lowering in N-doped GeO2 on Suppression of GeO Desorption　and Planarization of Ge Interface",2013
- Author(s)
  T. Tabata, C.H. Lee, T. Nishimura, K. Nagashio and A. Toriumi
- Organizer
  2013 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  Hilton Fukuoka Sea Hawk (Fukuoka, Fukuoka)
- Year and Date
  2013-09-26
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] Epitaxial CVD graphene growth on Cu/mica for gate stack research2013
- Author(s)
  J. L. Qi, K. Nagashio1, W. J. Liu, T. Nishimura and A. Toriumi
- Organizer
  2013 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  ヒルトン福岡シーホーク(福岡県)
- Year and Date
  2013-09-26
- Data Source
  KAKENHI-PROJECT-12F02364
[Presentation] Oxygen Potential Lowering in N-doped GeO2 for Ge MIS Gate Stack Desian in Extremely Thin EOT Region2013
- Author(s)
  田畑俊行, 李忠賢, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学京田辺キャンパス(京都))
- Year and Date
  2013-09-17
- Data Source
  KAKENHI-PROJECT-13F03058
[Presentation] "Impact of Oxidation Pressure on the Band Alignment at GeO2/GeProbed by Internal Photoemission Spectroscopy"2013
- Author(s)
  W.F. Zhang, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi
- Organizer
  ICSI-8 and ISCSI-VI
- Place of Presentation
  Kyushu University School of Medicine (Fukuoka, Fukuoka)
- Year and Date
  2013-06-06
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] 熱処理雰囲気の違いによる結晶化HfO2薄膜相変態速度への影響2012
- Author(s)
  岩井貴雅, 中嶋泰大, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Role of Ar on Structual Phase Transformation of Sputtered HfO22012
- Author(s)
  T. Iwai, Y. Nakajima, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  2012 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  京都国際会館(京都府)
- Year and Date
  2012-09-27
- Data Source
  KAKENHI-PROJECT-24656200
[Presentation] SiO2/high-k/SiO2/Siゲートスタック構造による界面ダイポール効果の打ち消し-カウンターダイポール効果の実証-2012
- Author(s)
  日比野真也, 西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] HfO2におけるcubic相からmonoclinic相への結晶相変態過程の速度論的解析2012
- Author(s)
  中嶋泰大, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第17回研究会)
- Place of Presentation
  東レ総合研究センター(静岡県)(招待講演)
- Year and Date
  2012-01-21
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 速度論的考察に基づく良好なSiC/SiO2界面形成2012
- Author(s)
  中坪俊, 西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] HfO2のcubic相からmonoclinic相への相変態機構に及ぼす酸素の効果2012
- Author(s)
  中嶋泰大, 岩井貴雅, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-17
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] AlN/Ge MISゲートスタックにおける高圧窒素アニールの効果2012
- Author(s)
  田畑俊行, 李忠賢, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  2012年春季第59回応用物理学関係連合講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-16
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Counter Dipole Layer Formation in SiO2/High-k/SiO2/Si Gate Stacks2012
- Author(s)
  S. Hibino, T. Nishimura, K. Nagashio, K. Kita, and A. Toriumi
- Organizer
  2012 IEEE Silicon Nano electronics Workshop
- Place of Presentation
  Hilton Hawaiian Village ,Hawaii, U.S.A.
- Year and Date
  2012-01-10
- Data Source
  KAKENHI-PROJECT-24656200
[Presentation] Control of Ge/High-k Interface for Ge CMOS Technology2012
- Author(s)
  K.Kita, S.K.Wang, T.Tabata, C.H.Lee, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  39th Conference on the Physics and Chemistry of Surfaces and Interfaces (PCSI-39)
- Place of Presentation
  La Fonda Hotel, Santa Fe (U.S.A.)(招待講演)
- Year and Date
  2012-01-25
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Control of Ge/High-k Interface for Ge CMOS Technology(invited)2012
- Author(s)
  K. Kita, S. K. Wang, T. Tabata, C. H. Lee, T. Nishimura, K. Nagashio and A. Toriumi
- Organizer
  39th Conf. Physics and Chemistry of Surfaces and Interfaces,(PCSI-39)
- Place of Presentation
  Santa Fe, USA
- Year and Date
  2012-01-25
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Counter Dipole Layer Formation in SiO_2/High-k/SiO_2/Si Gate Stacks2012
- Author(s)
  S. Hibino, T. Nishimura, K. Nagashio, K. Kita and A. Toriumi
- Organizer
  Silicon Nanoelectronics Workshop(2012)
- Place of Presentation
  Honolulu, USA
- Year and Date
  2012-06-10
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Thermodynamic Control of Interface Layer Formation in High-k Gate Stacs on 4H-SiC2011
- Author(s)
  S.Nakatsubo, T.Nishimura, K.Kita, K.Nagashio, A.Toriumi
- Organizer
  2011 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  WINC AICHI, Nagoya (Aichi)
- Year and Date
  2011-09-30
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] lnterface Layer Scavenging and Defect Generation in LaLuO3/Ge MIS Gate Stack2011
- Author(s)
  T.Tabata, C.H.Lee, K.Kita, A.Toriumi
- Organizer
  2011 International Workshop on Dielectric Thin Film for Future Electron Devices(IWDTF2011)
- Place of Presentation
  東京
- Year and Date
  2011-01-20
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Demonstration of Very High-k HfO2(k～50)by Suppressing Martensitic Transformation in Thin Dielectric Films2011
- Author(s)
  Y.Nakajima, K.Kita, T, Nishimura, K.Nagashio, A.Toriumi
- Organizer
  2011 International Workshop on Dielectric Thin Film for Future Electron Devices(IWDTF2011)
- Place of Presentation
  東京
- Year and Date
  2011-01-20
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Material Potential and Scalability Challenges of Germanium CMOS2011
- Author(s)
  A.Toriumi, C.H.Lee, S.K.Wang, T.Tabata, M.Yoshida, D.D.Zhao, T.Nishimura, K.Kita, K.Nagashio
- Organizer
  2011 IEEE International Electron Device Meeting (IEDM2011)
- Place of Presentation
  Hilton Washington Hotel, Washington DC (U.S.A.)(招待講演)
- Year and Date
  2011-12-07
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Phase Transformation Kinetics of HfO_2 Polymorphs in Ultra-Thin Region2011
- Author(s)
  Y. Nakajima, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  2011 Symposia on VLSI Technology
- Place of Presentation
  Kyoto, Japan
- Year and Date
  2011-06-15
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Phase Transformation Kinetics of HfO2 Polymorphs in Ultra-Thin Region2011
- Author(s)
  Y.Nakajima, K.Kita, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  2011 Symposia on VLSI Ttechnology
- Place of Presentation
  Rihga Royal Hotel Kyoto, (Kyoto)
- Year and Date
  2011-06-15
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Material Potential and Scalability Challenges of Germanium CMOS2011
- Author(s)
  A. Toriumi, C. H. Lee, S. K. Wang, T. Tabata, M. Yoshida, D. D. Zhao, T. Nishimura, K. Kita, and K. Nagashio
- Organizer
  2011 IEEE International Electron Device Mtg.(IEDM2011)
- Place of Presentation
  Washington DC, USA
- Year and Date
  2011-12-07
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Opportunities for Phase-controlled Higher-k HfO22011
- Author(s)
  A.Toriumi, Y.Nakajima, K.Kita
- Organizer
  220th ECS Meeting
- Place of Presentation
  Westin Boston Waterfront, Boston (U.S.A.)(招待講演)
- Year and Date
  2011-10-10
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 1.2 nm-EOT Al2O3 /Ge Gate Stack with GeO X-free Interface2011
- Author(s)
  T.Tabata, C.H.Lee, T.Nishimura, S.K.Wang, K.Kita, A.Toriumi
- Organizer
  2011 International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  WINC AICHI, Nagoya (Aichi)
- Year and Date
  2011-09-28
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Kinetic Effects of Oxygen Vacancy Formed by GeO2/Ge Interfacial Reaction2011
- Author(s)
  S.K.Wang, K.Kita, T, Nishimura, K.Nagashio, A, Toriumi
- Organizer
  2011 International Workshop on Dielectric Thin Film for Future Electron Devices(IWDTF2011)
- Place of Presentation
  東京
- Year and Date
  2011-01-20
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Design of Interfacing Fields for Advanced Electron Devices2010
- Author(s)
  A.Toriumi
- Organizer
  International Symposium on Technology Evolution for Silicon Nano-Electronics(ISTESNE)
- Place of Presentation
  東京
- Year and Date
  2010-06-03
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Direct LaLuO3/Ge Gate Stack Formation by Interface Layer Scavenging and Subsequent Low Temperature O2 Annealing2010
- Author(s)
  T.Tabata, C.H.Lee, K.Kita, A.Toriumi
- Organizer
  The 218th Electrochemical Society Meeting
- Place of Presentation
  Las Vegas, U.S.A
- Year and Date
  2010-10-13
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] XPSで決定するHigh-k絶縁膜価電子帯エネルギー準位の定量的再検討2010
- Author(s)
  近田侑吾, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
- Place of Presentation
  三島
- Year and Date
  2010-01-22
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Experimental Demonstration of Higher-k Phase Hf02 through Non-equilibrium Thermal Treatment2010
- Author(s)
  Y.Nakajima, K.Kita, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  217th ECS Meeting
- Place of Presentation
  Vancouver, Canada
- Year and Date
  2010-04-27
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Effects of GeO2-Metal Interaction on VFB of GeO2 MIS Gate Stacks2010
- Author(s)
  F.I.Alzakia, K.Kita, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  2010 International Conference on Solid State Devices andMaterials(SSDM)
- Place of Presentation
  東京
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Formation of Dipole Layers at Oxide Interfaces in High-k Gate Stacks2010
- Author(s)
  K. Kita, L. Q. Zhu, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  218th ECS Mtg.
- Place of Presentation
  Las Vegas, USA
- Year and Date
  2010-10-12
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] High-k材料固有のバンド端エネルギー準位のXPSによる定量的評価2010
- Author(s)
  近田侑吾, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] UV分光エリプソメトリを用いた複素屈折率測定に基づくGe上GeO2薄膜の欠陥評価2010
- Author(s)
  吉田まほろ, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
- Place of Presentation
  三島
- Year and Date
  2010-01-22
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Ge/GeO2界面から脱離するGeOのTDSによる解析2010
- Author(s)
  王盛凱, 喜多浩之, 田畑俊行, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
- Place of Presentation
  三島
- Year and Date
  2010-01-22
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 極薄TiO2膜の挿入による金属/n-Ge接合におけるオーミック接合の形成2010
- Author(s)
  西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] X-ray Photoelectron Spectroscopy Study of dipole Effects at High-k/SiO2 Interface2010
- Author(s)
  L..Q.Zhu, K.Kita, T.Nishimura, K.Nagashio, S.K.Wang, A.Toriumi
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
- Place of Presentation
  三島
- Year and Date
  2010-01-22
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] GeO Desorption Mechanism from GeO2/Ge Stack Determined by 73Ge Labeling Technique in Thermal Desorption Spectroscopy(TDS)Analysis2010
- Author(s)
  S.K.Wang, K.Kita, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  2010 International Conference on Solid State Devices and Materials(SSDM)
- Place of Presentation
  東京
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] GeO2形成時の高圧酸化と1気圧酸化の本質的な違い-バルクGeO2膜とGeO2/Ge界面の独立な制御-2010
- Author(s)
  李忠賢, 西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] TO-and LO-mode analyses in asymmetric stretching vibrations in ultra thinthermally grown GeO2 on Ge substrate2010
- Author(s)
  M.Yoshida, T.Nishimura, C.H.Lee, K.Kita, K.Nagashio , A.Toriumi
- Organizer
  2010 International Conference on Solid State Devices and Materials(SSDM)
- Place of Presentation
  東京
- Year and Date
  2010-09-24
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 「High-k/SiO2界面に形成されるダイポールの起源」(招待)2010
- Author(s)
  喜多浩之, 鳥海明
- Organizer
  ゲートスタック研究-材料・プロセス・評価の物理-(第16回研究会)
- Place of Presentation
  三島
- Year and Date
  2010-01-23
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Interfacial dipoles at high-k/SiO2 interface observed by X-ray Photoelectron Spectroscopy2010
- Author(s)
  竺立強, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Internal Photo Emission測定における絶縁膜電界の決定方法2010
- Author(s)
  鷹本靖欣, 西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Stability origin of metastable higher-k phase HfO2 at room temperature2010
- Author(s)
  Y.Nakajima, K.Kita, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  2010 International Conference on Solid State Devices and Materials(SSDM)
- Place of Presentation
  東京
- Year and Date
  2010-09-23
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Advantage of High-pressure Oxidation for Ge/GeO2 Stack Formation2010
- Author(s)
  C.H.Lee, T.Nishimura, T.Tabata, S.Wang, K.Nagashio, K.Kita, A.Toriumi
- Organizer
  2010 International Conference on Solid State Devices andMaterials(SSDM)
- Place of Presentation
  東京
- Year and Date
  2010-09-22
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Oxidation, Diffusion and Desorption in Ge/GeO2 System2010
- Author(s)
  A.Toriumi, S.K.Wang, C.H.Lee, M.Yoshida, K.Kita, T.Nishimura, K.Nagashio
- Organizer
  217th ECS Meeting
- Place of Presentation
  Vancouver, Canada
- Year and Date
  2010-04-27
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Formation of Dipole Layers at Oxide Interfaces in High-k Gate Stacks2010
- Author(s)
  K.Kita, L.Q.Zhu T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  The 218th Electrochemical Society Meeting
- Place of Presentation
  Las Vegas, U.S.A
- Year and Date
  2010-10-12
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] GeO2 MISスタックのフラットバンド電圧に対するGeO2/メタル界面の影響2010
- Author(s)
  喜多浩之, 西村知紀, 李忠賢, アルザキアファド, 長汐晃輔, 鳥海明
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Direct LaLuO3/Ge Gate Stack Formation by Interface Layer Scavenging and Subsequent Low Temperature O2 Annealing2010
- Author(s)
  T. Tabata, C. H. Lee, K. Kita, and A. Toriumi
- Organizer
  218th ECS Mtg.
- Place of Presentation
  Las Vegas, USA
- Year and Date
  2010-10-13
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 高圧O2熱処理がGe/GeO2に及ぼす影響2010
- Author(s)
  吉田まほろ, 喜多浩之, 李忠賢, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Ge/GeO2界面反応の理解に基づいたGeO2膜物性の制御とGe-MOSFETの性能向上2010
- Author(s)
  喜多浩之, 王盛凱, 李忠賢, 吉田まほろ, 西村知紀, 長汐晃浦, 鳥海明
- Organizer
  電気気学会電子デバイス研究会 EDD-10-037
- Place of Presentation
  東京
- Year and Date
  2010-03-26
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] ヘテロ界面に於けるバンドオフセットの決定に向けたInternal Photo Emission法の詳細検討2010
- Author(s)
  鷹本靖欣, 西村知紀, 長汐晃輔, 喜之浩之, 鳥海明
- Organizer
  ゲートスタック研究会-材料・プロセス・評価の物理-(第16回研究会)
- Place of Presentation
  三島
- Year and Date
  2010-01-22
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Experimental Demonstration of Higher-k Phase HfO2 through non-equilibrium Thermal Treatment2010
- Author(s)
  Y. Nakajima, K. Kita, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  217th ECS Mtg.
- Place of Presentation
  Vancouver, Canada
- Year and Date
  2010-04-27
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 「Ge CMOSの可能性と課題」(招待)2010
- Author(s)
  鳥海明, 喜多浩之, 西村知紀, 長汐晃浦
- Organizer
  2010春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Feasibility of Ge CMOS for Beyond Si-CMOS2010
- Author(s)
  A.Toriumi, C.H.Lee, T.Nishimura, K.Kita, S.K.Wang, M.Yoshida, K.Nagashio
- Organizer
  The 218th Electrochemical Society Meeting
- Place of Presentation
  Las Vegas, U.S.A
- Year and Date
  2010-10-11
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 低圧酸素雰囲気下におけるGe表面の活性酸化2010
- Author(s)
  王盛凱, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2010年春季第57回応用物理学関係連合講演会
- Place of Presentation
  神奈川
- Year and Date
  2010-03-18
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] X-ray Photoelectron spectroscopy study of dipole effects at HfO2/SiO2/Si stacks2009
- Author(s)
  L.Q.Zhu, K.Kita, T.Nishimura, K.Nagashio, S.K.Wang, A.Toriumi
- Organizer
  Int.conf. on Solid State Devices and Materials
- Place of Presentation
  Sendai
- Year and Date
  2009-10-07
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 「Ge-CMOSをめざした固相界面場制御」(招待)2009
- Author(s)
  鳥海明, 喜多浩之, 西村知紀, 長汐晃輔
- Organizer
  2009年秋季70回応用物理学会学術講演会シンポジウム『シリコンナノエレクトロニクスの新展開』
- Place of Presentation
  富山
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 180 isotope tracing of GeO Desorption from GeO2/Ge Structure2009
- Author(s)
  S.Wang, K.Kita, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  Int.conf. on Solid State Devices and Materials
- Place of Presentation
  Sendai
- Year and Date
  2009-10-09
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Thermodynamics and kinetics for suppression of GeO desorption by high pressure oxidation of Ge2009
- Author(s)
  K.Nagashio, T.Nishimura, K.Kita, A.Toriumi
- Organizer
  MRS spring meeting
- Place of Presentation
  San Francisco, USA
- Year and Date
  2009-04-15
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] GeO2膜のサブギャップ光吸収とGeO脱離量の相関の考察2009
- Author(s)
  喜多浩之, 吉田まほろ, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2009年秋季 70回応用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] On the Origin of Anomalous VTH Shift in high-k MOSFETs2009
- Author(s)
  A. Toriumi and K. Kita
- Organizer
  215th ECS Mtg.
- Place of Presentation
  San Francisco, USA
- Year and Date
  2009-05-27
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Ge高圧酸化におけるGeO脱離抑制に対する全圧と分圧の違い2009
- Author(s)
  李忠賢, 西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  2009年秋季 70回用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] GeO2膜のアニール後に観測されるサブギャップ抑制のための高圧酸素圧力の定量化2009
- Author(s)
  吉田まほろ, 喜多浩之, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2009年秋季 70回応用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Sub-gap Formation and Its Annihilation in Energy Band Gap of GeO2 by Changing O2 Pressure in PDA Process2009
- Author(s)
  M.Yoshida, K.Kita, K.Nagashio, T.Nishimura, A.Toriumi
- Organizer
  40th IEEE Semiconductor Interface Specialists Conference(SISC2009)
- Place of Presentation
  Arlington, USA
- Year and Date
  2009-12-03
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Ge/GeO2からのGeO脱離における活性化エネルギーのTDSによる評価2009
- Author(s)
  王盛凱, 喜多浩之, 李忠賢, 西村知紀, 長汐晃輔, 鳥海明
- Organizer
  2009年秋季 70回応用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-11
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Local GeO2 Doping at LaLuO3/Ge Interface for Direct High-k/Ge Gate Stacks2009
- Author(s)
  T.Tabata, C.H.Lee, K.Kita, A.Toriumi
- Organizer
  40th IEEE Semiconductor Interface Specialists Conference(SISC2009)
- Place of Presentation
  Arlington, USA
- Year and Date
  2009-12-03
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Ge/GeO2 Interface Control with High Pressure Oxidation for Improving Electrical Characteristics2009
- Author(s)
  C.H.Lee, T.Tabata, T.Nishimura, K.Nagashio, K.Kita, A.Toriumi
- Organizer
  215th Meeting, The Electrochemical Society
- Place of Presentation
  San Francisco, USA
- Year and Date
  2009-05-26
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] "Material Science of Metal/High-k Gate Stack for Advanced CMOS"(invited)2009
- Author(s)
  A.Toriumi
- Organizer
  1st International Workshop on Si based nano-electronics and-photonics
- Place of Presentation
  Vigo, Spain
- Year and Date
  2009-09-21
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Kinetic Study of GeO Desorption from Ge/GeO2 system2009
- Author(s)
  S.K.Wang, K.Kita, C.H.Lee, T.Tabata, K.Nagashio, T.Nishimura, A.Toriumi
- Organizer
  40th IEEE Semiconductor Interface Specialists Conference(SISC2009)
- Place of Presentation
  Arlington, USA
- Year and Date
  2009-12-03
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] "Control of Properties of GeO2 Films and Ge/GeO2 Interfaces by the Suppression of GeO Volatilization"(invited)2009
- Author(s)
  K.Kita, C.Lee, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  215th Meeting, The Electrochemical Society
- Place of Presentation
  San Francisco, USA
- Year and Date
  2009-05-26
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] "Anomalous VFB Shift in High-k Gate Stacks-Is its origin at the top or bottom interface?-"(invited)2009
- Author(s)
  A.Toriumi, T.Nabatame
- Organizer
  216th The Electrochemical Society Meeting
- Place of Presentation
  Vienna, Austria
- Year and Date
  2009-10-05
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Study of La-doped GeO2 Films from Defect Annihilation Viewpoint2009
- Author(s)
  T.Tabata, K.Kita, A.Toriumi
- Organizer
  Int.conf. on Solid State Devices and Materials
- Place of Presentation
  Sendai
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 「Much More Mooreに向けたHigh-k技術」(招待)2009
- Author(s)
  鳥海明
- Organizer
  2009年秋季 70回用物理学会学術講演会シンポジウム『High-kゲートスタック研究を振り返り次のステップヘ』
- Place of Presentation
  富山
- Year and Date
  2009-09-09
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] "Opportunities and Challenges for Ge CMOS-Control of interfacing fields on Ge is a key-"(invited)2009
- Author(s)
  A.Toriumi, T.Tabata, C.H.Lee, T.Nishimura, K.Kita, K.Nagashio
- Organizer
  INFOS2009
- Place of Presentation
  Cambridge, UK
- Year and Date
  2009-06-29
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] On the Origin of Anomalous VTH Shift in high-k MOSFETs2009
- Author(s)
  A. Toriumi, K. Kita
- Organizer
  215th Meeting, The Electrochemical Society
- Place of Presentation
  USA
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 金属/Ge界面におけるショットキー障壁高さのGeO2導入効果-膜厚及び金属による違い-2009
- Author(s)
  西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  2009年秋季 70回用物理学会学術講演会
- Place of Presentation
  富山
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Anomalous VFB Shift in High-k Gate Stacks-Is its origin at the top or bottom interface?2009
- Author(s)
  A. Toriumi and T. Nabatame
- Organizer
  216th ECS Mtg.
- Place of Presentation
  Vienna, Austria
- Year and Date
  2009-10-05
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 金属/ゲルマニウム界面のフェルミレベルピンニングとその制御性2009
- Author(s)
  西村知紀, 長汐晃輔, 喜多浩之, 鳥海明
- Organizer
  ゲート絶縁薄膜、容量膜、機能膜およびメモリ技術(応用物理学会、シリコンテクノロジー分科会)、第113研究集会「ゲートスタック研究の進展-Ge系材料を中心に」との合同開催
- Place of Presentation
  東京
- Year and Date
  2009-06-19
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Record-high Electron Mobility in Ge n-MOSFETs Exceeding Si Universality2009
- Author(s)
  C.H.Lee, T.Nishimura, N.Saido, K.Nagashio, K.Kita, A.Toriumi
- Organizer
  2009IEEE International Electron Device Meeting(IEDM)
- Place of Presentation
  Baltimore, USA
- Year and Date
  2009-12-08
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] High Electron Mobility Ge n-Channel MOSFETs with GeO2 grown by High Pressure Oxidation2009
- Author(s)
  C.H.Lee, T.Nishimura, T.Tabata, K.Nagashio, K.Kita, A.Toriumi
- Organizer
  Int.conf. on Solid State Devices and Materials
- Place of Presentation
  Sendai
- Year and Date
  2009-10-09
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] XPS Analysis of High-k/SiO2/Si Stacks through Grounded Gate Metal-Estimation of Energy Levels of Electronic Structures of High-k Dielectric Films2009
- Author(s)
  Y.Chikata, K.Kita, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  40th IEEE Semiconductor Interface Specialists Conference (SISC2009)
- Place of Presentation
  Arlington, USA
- Year and Date
  2009-12-05
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Spectroscopic Ellipsometry Study on Defects Generation in GeO2/Ge stacks2009
- Author(s)
  K.Kita, M.Yoshida, T.Nishimura, K.Nagashio, A.Toriumi
- Organizer
  Int.conf.on Solid State Devices and Materials
- Place of Presentation
  Sendai
- Year and Date
  2009-10-09
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Comprehensive Study of GeO2 Oxidation, GeO Desorption and GeO2-Metal Interaction. Understanding of Ge Processing Kinetics for Perfect Interface Control-2009
- Author(s)
  K.Kita, S.K.Wang, M.Yoshida, C.H.Lee, K.Nagashio, T.Nishimura, A.Toriumi
- Organizer
  2009IEEE International Electron Device Meeting(IEDM)
- Place of Presentation
  Baltimore, USA
- Year and Date
  2009-12-09
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] "On the Origin of Anomalous VTH Shift in high-k MOSFETs"(invited)2009
- Author(s)
  A.Toriumi, K.Kita
- Organizer
  215th Meeting, The Electrochemical Society
- Place of Presentation
  San Francisco, USA
- Year and Date
  2009-05-27
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Intrinsic Origin of Electric Dipoles Formed at High-k/SiO_2 Interface2008
- Author(s)
  K. Kita and A. Toriumi
- Organizer
  2010 IEEE International Electron Device Mtg.(IEDM)
- Place of Presentation
  San Diego, USA
- Year and Date
  2008-12-15
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] アモルファス希土類High-k膜LaLuO3の基本特性とGeMISへの適用2008
- Author(s)
  田畑俊行, 喜多浩之, 鳥海明
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  習志野
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 次世代High-k絶縁膜へ向けた三元系酸化物の材科設計(依頼)2008
- Author(s)
  喜多浩之, 鳥海明
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  習志野
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 金属/ゲルマニウム接合におけるフェルミレベルピンニングの起源と制御2008
- Author(s)
  西村知紀, 高橋俊岳, 喜多浩之, 鳥海明
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会
- Place of Presentation
  三島
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] GeO2/Ge界面からのGeO脱離の抑制によるGeO2/Ge界面特性の向上2008
- Author(s)
  喜多浩之, 鈴木翔, 能村英之, 高橋俊岳, 西村知紀, 鳥海明
- Organizer
  応用物理学会薄膜・表面物理分科会・シリコンテクノロジー分科会共催特別研究会
- Place of Presentation
  三島
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Application of Advanced Atomic Layer Deposition for Understanding and Control of VTH and EOT in Metal/High-k Gate Stacks2008
- Author(s)
  A. Toriumi, T. Nabatame and H. Ota
- Organizer
  Pacific Rim Mtg. on Electrochemical and Solid-State Science
- Place of Presentation
  Honolulu, USA
- Year and Date
  2008-10-14
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] On the control of GeO2 and metal/Ge interfaces for metal source/drain Ge CMOS (Invited)2008
- Author(s)
  A. Toriumi, T. Nishimura, T. Takahashi, K. Kita
- Organizer
  2008 Materials Research Society Spring Metting
- Place of Presentation
  San Francisco
- Year and Date
  2008-03-24
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 微量SiO2添加に伴うHfO2の正方晶構造安定化の起源に関する考察2008
- Author(s)
  富田一行, 喜多浩之, 鳥海明
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  習志野
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Ge/絶縁膜およびGe/金属界面を制御したGe-MOSFET技術(依頼)2008
- Author(s)
  鳥海明, 喜多浩之, 西村知紀
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  習志野
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 金属/極薄絶縁膜/Ge接合におけるショットキー障壁変調量の絶縁膜による違い2008
- Author(s)
  西村知紀, 高橋俊岳, 喜多浩之, 鳥海明
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  習志野
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Phase Controlled HfO_2 for Higher-k Dielectrics2008
- Author(s)
  A. Toriumi, K. Kita, S. Migita and Y. Watanabe
- Organizer
  Higher-k Workshop
- Place of Presentation
  Stanford Univ., USA
- Year and Date
  2008-08-22
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 基板加熱スパッタリング法により成膜されたHfO2薄膜の誘電緩和とその起源(若手奨励賞のため招待)2008
- Author(s)
  富田一行, 喜多浩之, 鳥海明
- Organizer
  第55回応用物理学関係連合講演会
- Place of Presentation
  習志野
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 金属/Ge接合界面への極薄GeOxの導入によるフェルミレベルピンニングの緩和2007
- Author(s)
  西村知紀, 喜多浩之, 鳥海明
- Organizer
  応用物理学会秋季講演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-08
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Interfacing Control of Dielectric Films and Metals on Germanium for CMOS Application (Invited)2007
- Author(s)
  A. Toriumi, K. Kita, T. Nishimura, T. Takahashi
- Organizer
  The 34th International Symposium on Compound Semiconductors
- Place of Presentation
  京都
- Year and Date
  2007-10-16
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Thermally Robust Germanium MIS Gate Stacks with LaYO3 Dielectrics Films2007
- Author(s)
  T. Takahashi, Y. Zhao, T. Nishimura, K. Kita, A. Toriumi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  筑波
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Current Status and Perspective of High-k Gate Stack Materials Engineering for Further Scaled CMOS2007
- Author(s)
  A. Toriumi
- Organizer
  212th ECS Mtg.
- Place of Presentation
  Washington DC, USA
- Year and Date
  2007-10-10
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Materials Science-based Device Performance Engineering for Metal Gate High-k CMOS (Invited)2007
- Author(s)
  A. Toriumi, K. Kita, K. Tomida, Y. Zhao, J. Widiez, T. Nabatame, H. Ota, M. Hirose
- Organizer
  2007 International Electron Device Meeting (IEDM)
- Place of Presentation
  Washington, D. C., USA
- Year and Date
  2007-12-12
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Control of Fermi-Level Pinning at Metal/Germanium. Interface by Inserting Ultra-thin Oxides2007
- Author(s)
  T. Nishimura, K. Kita, A. Toriumi
- Organizer
  5th International Symposium on Control of Semiconductor Interface (ISCSI-V)
- Place of Presentation
  東京
- Year and Date
  2007-11-14
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Direct Evidence of GeO Volatilization from GeO2 Films and Impact of Its Suppression on GeO2/Ge MIS Characteristics2007
- Author(s)
  S. Suzuki, K. Kita, H. Nomura, T. Nishimura, A. Toriumi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  筑波
- Year and Date
  2007-09-19
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] 基板加熱スパッタによるHfO2膜の結晶化促進と著しい誘電分散の出現2007
- Author(s)
  富田一行, 喜多浩之, 鳥海明
- Organizer
  応用物理学会秋季訓演会
- Place of Presentation
  札幌
- Year and Date
  2007-09-06
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] High-k Dielectrics and Metals on Germanium2007
- Author(s)
  A. Toriumi, K. Kita and T. Nishimura
- Organizer
  International Workshop on High-k Dielectrics on High Electron Mobility Channel Materials
- Place of Presentation
  Taiwan
- Year and Date
  2007-05-25
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Interface Properties of Ge with Dielectrics and Metals (Invited)2007
- Author(s)
  A. Toriumi, H. Nomura, S. Suzuki, T. Nishimura, K. Kita
- Organizer
  5th International Conference on Silicon Epitaxy and Heterostructures (ICSI)
- Place of Presentation
  Marseille, France
- Year and Date
  2007-05-21
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Advanced Characterization of High-k Gate Stack by Internal Photo Emission (IPE): Interfacial Dipole and Band Diagram in Al/Hf(Si)O2/Si MOS Structure2007
- Author(s)
  J. Widiez, K. Kita, T. Nishimura, A. Toriumi
- Organizer
  International Conference on Solid State Devices and Materials (SSD)
- Place of Presentation
  筑波
- Year and Date
  2007-09-21
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Control of High-k/Ge Interface Properties through Selection of High-k Materials and Suppression of GeO Volatilization (Invited)2007
- Author(s)
  K. Kita, T. Takahashi, H. Nomura, S. Suzuki, T. Nishimura, A. Toriumi
- Organizer
  5th International Symposium on Control of Semiconductor Interface (ISCSI-V)
- Place of Presentation
  東京
- Year and Date
  2007-11-14
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] A Significant Shift of Strongly Pinned Charge Neutrality Level at Metal/Germanium Interface by Inserting Ultra-thin Oxides2007
- Author(s)
  T. Nishimura, K. Kita, A. Toriumi
- Organizer
  38th IEEE Semiconductor Interface Specialists Conference(SISC2007)
- Place of Presentation
  Arlington, USA
- Year and Date
  2007-12-10
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] On the control of GeO2/Ge and metal/Ge interfaces (Invited)2007
- Author(s)
  A. Toriumi, T. Nishimura, K. Kita
- Organizer
  3rd International Workshop on New Group IV Semiconductor Nanoelectronics
- Place of Presentation
  仙台
- Year and Date
  2007-11-14
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] High-k dielectric films for advanced microelectronics2007
- Author(s)
  A. Toriumi
- Organizer
  International Conf.<Micro-and Nanoelectronics 2007>
- Place of Presentation
  Moscow, Russia
- Year and Date
  2007-10-02
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Effect of Ultra-thin Al2O3 Insertion on Fermi-level Pinning at Metal/Ge Interface2007
- Author(s)
  T. Nishimura, K. Kita, A. Toriumi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  筑波
- Year and Date
  2007-09-21
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Mechanisms of and Solutions to Moisture Absorption of Lanthanum Oxide as Highk Gate Dielectric2007
- Author(s)
  Y. Zhao, K. Kita, K. Kyuno, A. Toriumi
- Organizer
  211th Meeting of The Electrochemical Society (ECS)
- Place of Presentation
  Chicago, USA
- Year and Date
  2007-05-08
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Proof of Ge-Interfacing Concepts for Metal/High-k/Ge CMOS-Ge-intimate Material Selection and Interface Conscious Process Flow2007
- Author(s)
  T. Takahashi, T. Nishimura, L. Chen, S. Sakata, K. Kita, A. Toriumi
- Organizer
  2007 International Electron Device Meeting (IEDM)
- Place of Presentation
  Washington, D. C., USA
- Year and Date
  2007-12-12
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] High-k dielectric films for advanced microelectronics2007
- Author(s)
  A. Toriumi
- Organizer
  International Conf.<Micro-and Nanoelectronics 2007>
- Place of Presentation
  Washington DC, USA
- Year and Date
  2007-10-02
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Materials Science-based Device Performance Engineering for Metal Gate High-k CMOS2007
- Author(s)
  A. Toriumi, K. Kita, K. Tomida, Y. Zhao, J. Widiez, T. Nabatame, H. Ota and M. Hirose
- Organizer
  2007 International Electron Device Mtg.(IEDM)
- Place of Presentation
  Washington DC, USA
- Year and Date
  2007-12-12
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Ternary High-k Dielectrics for Advanced CMOS2007
- Author(s)
  A. Toriumi and K. Kita
- Organizer
  International Workshop on High-k Dielectrics on High Electron Mobility Channel Materials
- Place of Presentation
  Taiwan
- Year and Date
  2007-05-25
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Ternary High-k Dielectrics for Advanced CMOS (Invited)2007
- Author(s)
  A. Toriumi, K. Kita
- Organizer
  International Workshop on High-k Dielectrics on High Electron Mobility Channel Materials
- Place of Presentation
  Taiwan
- Year and Date
  2007-05-25
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Ge/High-k膜の界面反応に着目した電気特性の制御2007
- Author(s)
  喜多浩之, 能村英幸, 鈴本翔, 高橋俊岳, 西村知紀, 鳥海明
- Organizer
  応用物理学会・シリコンテクノロジー分科会第93回研究集会「ゲートスタツク構造の新展開」
- Place of Presentation
  東広島
- Year and Date
  2007-06-08
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Origin of Structural Phase Transformation of SiO2-doped HfO22007
- Author(s)
  K. Tomida, K. Kita, A. Toriumi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM)
- Place of Presentation
  筑波
- Year and Date
  2007-09-21
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] High-k dielectric films for advanced microelectronics (Invited)2007
- Author(s)
  A. Toriumi
- Organizer
  International Conference <Micro- and Nanoelectronics 2007>
- Place of Presentation
  Moscow, Russia
- Year and Date
  2007-10-02
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] High-k Dielectrics and Metals on Germanium (Invited)2007
- Author(s)
  A. Toriumi, K. Kita, T. Nishimura
- Organizer
  International Workshop on High-k Dielectrics on High Electron Mobility Channel Materials
- Place of Presentation
  Taiwan
- Year and Date
  2007-05-25
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] A Significant Shift of Strongly Pinned Charge Neutrality Level at Metal/Germanium Interface by Inserting Ultra-thin Oxides2007
- Author(s)
  T. ishimura, K. Kita, A. Toriumi
- Organizer
  38th IEEE Semiconductor Interface Specialists Conference International (SISC2007)
- Place of Presentation
  Arlington, USA
- Year and Date
  2007-12-10
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Dramatic Improvement of GeO2/Ge MIS Characteristics by Suppression of GeO Volatilization2007
- Author(s)
  K. Kita, S. Suzuki, H. Nomura, T. Takahashi, T. Nishimura, A. Toriumi
- Organizer
  212th Electrochemical Society Meeting
- Place of Presentation
  Washington, D. C., USA
- Year and Date
  2007-10-10
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] Current Status and Perspective of High-k Gate Stack Materials Engineering for Further Scaled CMOS (Invited)2007
- Author(s)
  A. Toriumi
- Organizer
  212th Electrochemical Society Meeting
- Place of Presentation
  Washington, D. C., USA
- Year and Date
  2007-10-08
- Data Source
  KAKENHI-PROJECT-19106005
[Presentation] "Conduction-band Tail States of Thermally Grown GeO2 on Ge Detected by Internal Photoemission Spectroscopy"
- Author(s)
  W.F. Zhang, C.H. Lee, T.Nishimura,and A. Toriumi
- Organizer
  2014 Silicon nanoelectronic workshop
- Place of Presentation
  Hawaii　（USA）
- Year and Date
  2014-06-08 – 2014-06-09
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Validity of Direct-gap Photoluminescence Analysis for Nondestructive Characterization of Oxide/Germanium Interface"
- Author(s)
  S. Kabuyanagi, T. Nishimura, T. Yajima, K. Nagashio, and A. Toriumi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM 2014)
- Place of Presentation
  Tsukuba International Congress Center(Ibaraki, Tsukuba)
- Year and Date
  2014-09-08 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Impact of YScO3 on Ge Gate Stack in Terms of EOT Reduction as Well as Interface"
- Author(s)
  C. Lu, C.H. Lee, T. Nishimura1,2, K. Nagashio and A. Toriumi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM 2014)
- Place of Presentation
  Tsukuba International Congress Center(Ibaraki, Tsukuba)
- Year and Date
  2014-09-08 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Toward 1-nm-EOT Hf0.5Zr0.5O2 Ferroelectric Films"
- Author(s)
  T. Nishimura, T. Yajima, K. Nagashio, and A. Toriumi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM 2014)
- Place of Presentation
  Tsukuba International Congress Center(Ibaraki, Tsukuba)
- Year and Date
  2014-09-08 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Selection of desirable trivalent metal oxides as doping material into GeO2"
- Author(s)
  C. Lu, C. H. Lee, W. Zhang, T. Nishimura, K. Nagashio and A. Toriumi
- Organizer
  7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  TOHOKU University(Sendai, Miyagi)
- Year and Date
  2014-01-27 – 2014-01-28
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Origin of Self-limiting Oxidation of Ge in High-Pressure O2 at Low Temperature"
- Author(s)
  C.H. Lee, T. Nishimura1,2, K. Nagashio and A. Toriumi
- Organizer
  International Conference on Solid State Devices and Materials (SSDM 2014)
- Place of Presentation
  Tsukuba International Congress Center(Ibaraki, Tsukuba)
- Year and Date
  2014-09-08 – 2014-09-11
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Thermodynamically Controlled GeO2 by Introducing M2O3 for Ultra-thin EOT Ge Gate Stacks"
- Author(s)
  Cimang Lu, Choong Hyun Lee, Wenfeng Zhang, Tomonori Nishimura, Kosuke Nagashio, and Akira Toriumi
- Organizer
  2014 MRS Spring
- Place of Presentation
  San Francisco (USA)
- Year and Date
  2014-04-21 – 2014-04-26
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Enhancement of High-Ns Electron Mobility in Ge(111) n-MOSFETs by the Formation of Atomically Flat GeO2/Ge Interface"
- Author(s)
  C. H. Lee, T. Nishimura, C. Lu, W. F. Zhang, K. Nagashio, and A. Toriumi
- Organizer
  7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  TOHOKU University(Sendai, Miyagi)
- Year and Date
  2014-01-27 – 2014-01-28
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Robust Interfacial Layer Y-doped GeO2 for Scalable EOT Ge Gate Stacks"
- Author(s)
  C. H. Lee, C. Lu, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  44th IEEE Semiconductor Interface Specialists Conference (SISC)
- Place of Presentation
  Arlington (USA)
- Year and Date
  2013-12-05 – 2013-12-07
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Direct Band Gap Modulation in Ultra-thin Highly Doped n-type GeOI"
- Author(s)
  S. Kabuyanagi, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
- Place of Presentation
  TOHOKU University(Sendai, Miyagi)
- Year and Date
  2014-01-27 – 2014-01-28
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Time-evolution of Roughening Process on Atomically Flat Ge (111) Surface by Diluted H2O2 Solution"
- Author(s)
  W.F. Zhang, T. Nishimura, K. Nagashio, and A. Toriumi
- Organizer
  44th IEEE Semiconductor Interface Specialists Conference (SISC)
- Place of Presentation
  Arlington (USA)
- Year and Date
  2013-12-05 – 2013-12-07
- Data Source
  KAKENHI-PROJECT-25249032
[Presentation] "Significant enhancement of High-Ns Electron Mobility in Ge n-MOSFETs with Atomically Flat Ge/GeO2 Interface"
- Author(s)
  C. H. Lee, T. Nishimura, C. Lu, W. Zhang, K. Nagashio, and A. Toriumi
- Organizer
  The 225th Electrochemical Society Meeting (ECS)
- Place of Presentation
  Orlando (USA)
- Year and Date
  2014-05-11 – 2014-05-15
- Invited
- Data Source
  KAKENHI-PROJECT-25249032

1. KITA Koji (00343145)

# of Collaborated Projects: 4 results

# of Collaborated Products: 196 results
2. KYUNO Kentaro (40251467)

# of Collaborated Projects: 3 results

# of Collaborated Products: 41 results
3. NISHIMURA Tomonori (10396781)

# of Collaborated Projects: 3 results

# of Collaborated Products: 105 results
4. LIU Wenjun

# of Collaborated Projects: 2 results

# of Collaborated Products: 9 results
5. LEE Choong Hyun

# of Collaborated Projects: 2 results

# of Collaborated Products: 60 results
6. CHEN JIKUN

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. NIWA Masaaki (90608936)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
8. 大畠昭子 (00301747)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. 内山潔 (80403327)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
10. 蓮沼隆 (90372341)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. ZHANG Wenfeng

# of Collaborated Projects: 0 results

# of Collaborated Products: 4 results

TORIUMI Akira 鳥海 明

Research Projects

Research Products

Co-Researchers

Study of ion transport mechanism in ultra-thin electrolyte membrane for low temperature operation of solid oxide fuel cell

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Study of oxidation mechanisms in Ge and SiGePrincipal Investigator

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Formation and characterization of MoS2 pn junction with atomically sharp impurity profilePrincipal Investigator

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酸化物薄膜における金属・絶縁体転移のサイズ効果Principal Investigator

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Study of carrier scattering mechanisms by Ge isotope and interface roughness in Ge thin filmsPrincipal Investigator

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極薄Ｇｅチャネルにおけるキャリア輸送機構の理解と制御Principal Investigator

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Study of field effect transistors using transition metal oxidesPrincipal Investigator

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高性能グラフェンＦＥＴに向けたゲートスタック技術の研究Principal Investigator

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Understanding and Control of Electronic Properties of Nanometer-thick Dielectric FilmsPrincipal Investigator

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有機薄膜の積層化による伝導キャリアの膜中蓄積効果の研究Principal Investigator

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シリコン基板上に作製した超薄膜・希土類金属酸化物の誘電率制御指針の構築Principal Investigator

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ナノ・プラスティックFETの研究開発Principal Investigator

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Control of thin-film growth by controlling the shape of 2-dimensional nucleus during initial stage

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TORIUMI Akira 鳥海明