Sato Taketomo 佐藤威友

… Alternative Names

SATO Taketomo 佐藤威友

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Researcher Number	50343009
Other IDs
External Links
Affiliation (Current)	2025: 北海道大学, 量子集積エレクトロニクス研究センター, 准教授
Affiliation (based on the past Project Information) *help	2015 – 2024: 北海道大学, 量子集積エレクトロニクス研究センター, 准教授 2014: 北海道大学, 学内共同利用施設等, 准教授 2007 – 2013: Hokkaido University, 量子集積エレクトロニクス研究センター, 准教授 2004 – 2006: 北海道大学, 量子集積エレクトロニクス研究センター, 助教授 2002 – 2003: Hokkaido University, Graduate School of Engineering, Research Associate, 大学院・工学研究科, 助手 2002: 北海道大学, 電子情報工学専攻, 助手
Review Section/Research Field	Principal Investigator Electronic materials/Electric materials / Basic Section 21050:Electric and electronic materials-related / Electronic materials/Electric materials Except Principal Investigator Electronic materials/Electric materials / Basic Section 21060:Electron device and electronic equipment-related / Science and Engineering / Science and Engineering / Electronic materials/Electric materials / Thin film/Surface and interfacial physical properties
Keywords	Principal Investigator 窒化物半導体 / 多孔質構造 / 窒化ガリウム / ナノ材料 / ウェットエッチング / 電気化学反応 / トランジスタ / 半導体物性 / エネルギー変換 / 光電気化学 … More / 化学センサ / 半導体ナノ構造 / 電気化学 / 表面・界面物性 / 電子・電気材料 / 量子ナノ構造 / 分子線エピタキシャル成長 / 界面制御 / 窒化物半導 / 電子デバイス / 低損傷エッチング / 電気化学プロセス / 新エネルギー / 光物性 / 半導体超微細化 / 高電子移動度トランジスタ / 低損傷プロセス / 機能修飾 / 太陽電池 / 光吸収率 / 陰極分解 / 陽極酸化 / インジウムリン / 高密度ナノ構造 / ポーラス構造 / 量子閉じ込め / 自己組織化 / 表面不活性化技術 / 選択成長 / III-V族化合物半導体 / フェルミ準位ピンニング / 計算機シミュレーション / 量子集積回路 / 選択成長法 / ナノショットキー接触 / ガリウムヒソ … More Except Principal Investigator GaN / AlGaN / DLTS / 選択成長 / HEMT / 界面準位 / 有機金属気相成長 / 深い準位 / 表面準位 / Selective Area Growth / MOVPE Growth / フォトニック結晶 / C-V / 電子準位 / AlInN / 電気化学酸化 / 光電気化学エッチング / 欠陥準位 / MOSFET / MOS構造 / ヘテロ接合FET / AlN / ワイドバンドギャップ / 高周波トランジスタ / パワートランジスタ / 窒化物半導体 / 電子捕獲準位 / 周期的ナノチャネル / CV解析 / 界面制御 / 電気化学エッチング / MOS / 異種接合 / Schottky interface / surface control / carbon diffusion / deep level / AIGaN / MIS構造 / 漏れ電流 / 酸素不純物 / 窒素空孔欠陥 / プラズマ処理 / ショットキー接合 / 表面制御 / 炭素拡散 / Photonic Bands / Line defect / Point / Light Extraction Efficiency / Photoluminescence / Photonics Crystal Slabs / Photonics Crystals / whispering gallery mode / 点欠陥共振器 / 線欠陥導波路 / 時間領域差分(FDTD)法 / フォトニックバンド / 線欠陥・点欠陥導入構造 / 光取り出し効率 / フォトルミネセンス / フォトニック結晶スラブ / Photonic Bandgap / Photonic Crystal / Masked Substrate / TM偏光・TE偏光 / 3角格子 / 2次元フォトニック結晶スラブ / 再成長 / マスクパターン / フォトニックバンドギャップ / プラズマ支援分子線エピタキシー法 / 光電極 / 光支援電気化学エッチング / プラズマ支援分子線エピタキシー / InGaN / 多孔質構造 / 半導体ナノワイヤ / 電流コラプス / 多重台形チャネル / 窒素空孔 / ドライエッチング / ICP / ALD / へテロ接合 / MMC / トランジスタ / 絶縁膜 / 表面・界面 / 窒化ガリウム / バンド不連続量 / 表面フェルミ準位 / フェルミ準位安定化エネルギー / 表面酸化 / 電気化学プロセス / 表面伝導 / ガリウムナイトライド / ガリウムヒソ / 2次元電子ガス / インターディジタル型遅波構造 / テラヘルツデバイス / 半導体プラズマ / 進行波型半導体デバイス Less

Improvement of effective electron mobility in inversion-type n-channel gallium nitride MOSFET by interface control
- Principal Investigator
  
  赤澤正道
- Project Period (FY)
  2024 – 2026
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Hokkaido University
窒化物半導体異種界面パラレル伝導制御とマルチチャネル高周波トランジスタの開発Principal Investigator
- Principal Investigator
  
  佐藤威友
- Project Period (FY)
  2023 – 2025
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Hokkaido University
Development of power transistors using ultra-wide-bandgap AlN-based semiconductors
- Principal Investigator
  
  Miyoshi Makoto
- Project Period (FY)
  2021 – 2023
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21060:Electron device and electronic equipment-related
- Research Institution
  Nagoya Institute of Technology
Development of wet etching technology for nitride semiconductors using strong oxidizing agents and application to transistorsPrincipal Investigator
- Principal Investigator
  
  Sato Taketomo
- Project Period (FY)
  2020 – 2022
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Review Section
  
  Basic Section 21050:Electric and electronic materials-related
- Research Institution
  Hokkaido University
Low-damage Processing of Nitride Semiconductors Based on Self-stoping Oxdization and Transistor ApplicationsPrincipal Investigator
- Principal Investigator
  
  Sato Taketomo
- Project Period (FY)
  2017 – 2019
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Interface control of heterojunctions including singularity structures for advanced electron devices
- Principal Investigator
  
  Hashizume Tamotsu
- Project Period (FY)
  2016 – 2020
- Research Category
  
  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
- Review Section
  
  Science and Engineering
- Research Institution
  Hokkaido University
Visible light responsive photocatalysts utilizing nitride semiconductor-based nanostructures for artificial photosynthesisPrincipal Investigator
- Principal Investigator
  
  Taketomo Sato
- Project Period (FY)
  2015 – 2017
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Nanoscale control of nitride semiconductor surface using low-damaged process for high-sensitive chemical sensorsPrincipal Investigator
- Principal Investigator
  
  SATO Taketomo
- Project Period (FY)
  2013 – 2015
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Exploration of novel materials for photochemical water splitting based on semiconductor nanowires and nanostructures
- Principal Investigator
  
  MOTOHISA Junichi
- Project Period (FY)
  2012 – 2013
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
窒化物半導体混晶のバルク準位評価とナノ構造表面制御
- Principal Investigator
  
  橋詰保
- Project Period (FY)
  2009 – 2010
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Hokkaido University
Reliability improvement of GaN transistors based on the control of electronic states and a nobel gate structure
- Principal Investigator
  
  HASHIZUME Tamotsu
- Project Period (FY)
  2009 – 2012
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Thin film/Surface and interfacial physical properties
- Research Institution
  Hokkaido University
化合物半導体配列ナノ構造を基盤とする超接合光吸収体の創成と太陽電池応用Principal Investigator
- Principal Investigator
  
  佐藤威友
- Project Period (FY)
  2009 – 2010
- Research Category
  
  Grant-in-Aid for Challenging Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
High-density formation of functionalized nano-interfaces based on semiconductor porous structures for high-sensitive chemical-sensing technologyPrincipal Investigator
- Principal Investigator
  
  SATO Taketomo
- Project Period (FY)
  2009 – 2012
- Research Category
  
  Grant-in-Aid for Young Scientists (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
III族窒化物半導体混晶の欠陥準位・表面準位の評価と制御
- Principal Investigator
  
  HASHIZUME Tamotsu
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Scientific Research on Priority Areas
- Review Section
  
  Science and Engineering
- Research Institution
  Hokkaido University
Formation of three-dimensional quantum nanostructure networks based on compound semiconductor porous structuresqPrincipal Investigator
- Principal Investigator
  
  SATO Taketomo
- Project Period (FY)
  2007 – 2008
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
半導体2次元電子ガスのプラズマ波によるミリ波・テラヘルツ進行波デバイスの研究
- Principal Investigator
  
  長谷川英機
- Project Period (FY)
  2005
- Research Category
  
  Grant-in-Aid for Exploratory Research
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Reliability improvement of GaN-based devices by controlling defects and interfaces
- Principal Investigator
  
  HASHIZUME Tamotsu
- Project Period (FY)
  2005 – 2006
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
ギガ・ノード超高密度量子ナノ集積構造の作製と表面制御技術の開発Principal Investigator
- Principal Investigator
  
  佐藤威友
- Project Period (FY)
  2004 – 2005
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Fabrication of Photonic Crystals by Selective-Area Metalorganic Vapor Phase Epitaxy and Their Application to Devices
- Principal Investigator
  
  MOTOHISA Junichi
- Project Period (FY)
  2003 – 2005
- Research Category
  
  Grant-in-Aid for Scientific Research (A)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY
量子集積回路の実現に向けた高性能ナノショットキーゲート電極の開発Principal Investigator
- Principal Investigator
  
  佐藤威友
- Project Period (FY)
  2002 – 2003
- Research Category
  
  Grant-in-Aid for Young Scientists (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  Hokkaido University
Formation of Photonic Crystals by Selective Area Growth and Their Applications
- Principal Investigator
  
  MOTOHISA Junichi
- Project Period (FY)
  2000 – 2002
- Research Category
  
  Grant-in-Aid for Scientific Research (B)
- Research Field
  
  Electronic materials/Electric materials
- Research Institution
  HOKKAIDO UNIVERSITY

[Journal Article] n型GaN基板上に形成されたp型GaN層に対する低損傷光電気化学エッチングとその電気化学的評価2023
- Author(s)
  髙津海、久保広大、佐藤威友
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 123 Pages: 28-31
- Data Source
  KAKENHI-PROJECT-23K26131
[Journal Article] Investigation of dominance in near-surface region on electrical properties of AlGaN/GaN heterostructures using TLM, XPS, and PEC etching techniques2023
- Author(s)
  Ochi Ryota、Togashi Takuya、Osawa Yoshito、Horikiri Fumimasa、Fujikura Hajime、Fujikawa Kazunari、Furuya Takashi、Isono Ryota、Akazawa Masamichi、Sato Taketomo
- Journal Title
  
  Applied Physics Express
  
  Volume: 16 Issue: 9 Pages: 091002-091002
- DOI
  10.35848/1882-0786/acf644
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-23KJ0042, KAKENHI-PROJECT-23K26131
[Journal Article] 電気化学反応を利用した窒化ガリウムのウェットエッチングと機能性材料2022
- Author(s)
  佐藤威友、渡久地政周
- Journal Title
  
  信学技報 IEICE Technical Report
  
  Volume: 122 Pages: 25-28
- Data Source
  KAKENHI-PROJECT-20H02175
[Journal Article] Self-terminating contactless photo-electrochemical (CL-PEC) etching for fabricating highly uniform recessed-gate AlGaN/GaN high-electron-mobility transistors (HEMTs)2021
- Author(s)
  Toguchi Masachika、Miwa Kazuki、Horikiri Fumimasa、Fukuhara Noboru、Narita Yoshinobu、Ichikawa Osamu、Isono Ryota、Tanaka Takeshi、Sato Taketomo
- Journal Title
  
  Journal of Applied Physics
  
  Volume: 130 Issue: 2 Pages: 024501-024501
- DOI
  10.1063/5.0051045
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-20H02175, KAKENHI-PROJECT-20J14520
[Journal Article] Self-termination of contactless photo-electrochemical (PEC) etching on aluminum gallium nitride/gallium nitride heterostructures2020
- Author(s)
  2.K. Miwa, Y. Komatsu, M. Toguchi, F. Horikiri, N. Fukuhara, Y. Narita, O. Ichikawa, R. Isono, T. Tanaka, and T. Sato
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 Issue: 2 Pages: 026508-026508
- DOI
  10.35848/1882-0786/ab6f28
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06421, KAKENHI-PROJECT-17H03224
[Journal Article] Thermal-assisted contactless photoelectrochemical etching for GaN2020
- Author(s)
  Horikiri Fumimasa、Fukuhara Noboru、Ohta Hiroshi、Asai Naomi、Narita Yoshinobu、Yoshida Takehiro、Mishima Tomoyoshi、Toguchi Masachika、Miwa Kazuki、Ogami Hiroki、Sato Taketomo
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 Issue: 4 Pages: 046501-046501
- DOI
  10.35848/1882-0786/ab7e09
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17H03224
[Journal Article] Depth profiling of surface damage in n-type GaN induced by inductively coupled plasma reactive ion etching using photo-electrochemical techniques2020
- Author(s)
  Yamada Shinji、Takeda Kentaro、Toguchi Masachika、Sakurai Hideki、Nakamura Toshiyuki、Suda Jun、Kachi Tetsu、Sato Taketomo
- Journal Title
  
  Applied Physics Express
  
  Volume: 13 Issue: 10 Pages: 106505-106505
- DOI
  10.35848/1882-0786/abb787
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06421, KAKENHI-PROJECT-20J14520
[Journal Article] Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor2020
- Author(s)
  Ochi Ryota、Maeda Erika、Nabatame Toshihide、Shiozaki Koji、Sato Taketomo、Hashizume Tamotsu
- Journal Title
  
  AIP Advances
  
  Volume: 10 Issue: 6 Pages: 065215-065215
- DOI
  10.1063/5.0012687
- NAID
  120006869887
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06421
[Journal Article] Simple wet-etching technology for GaN using an electrodeless photo-assisted electrochemical reaction with a luminous array film as the UV source2019
- Author(s)
  Horikiri Fumimasa、Fukuhara Noboru、Ohta Hiroshi、Asai Naomi、Narita Yoshinobu、Yoshida Takehiro、Mishima Tomoyoshi、Toguchi Masachika、Miwa Kazuki、Sato Taketomo
- Journal Title
  
  Applied Physics Express
  
  Volume: 12 Issue: 3 Pages: 031003-031003
- DOI
  10.7567/1882-0786/ab043c
- NAID
  210000135635
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17H03224
[Journal Article] Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices2019
- Author(s)
  Horikiri Fumimasa、Sato Taketomo、Fukuhara Noboru、Ohta Hiroshi、Asai Naomi、Narita Yoshinobu、Yoshida Takehiro、Mishima Tomoyoshi、Toguchi Masachika、Miwa Kazuki
- Journal Title
  
  IEEE Transactions on Semiconductor Manufacturing
  
  Volume: 32 Issue: 4 Pages: 489-495
- DOI
  10.1109/tsm.2019.2944844
- NAID
  120006783673
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03224
[Journal Article] Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors2019
- Author(s)
  Uemura Keisuke、Deki Manato、Honda Yoshio、Amano Hiroshi、Sato Taketomo
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 58 Issue: SC Pages: SCCD20-SCCD20
- DOI
  10.7567/1347-4065/ab06b9
- NAID
  210000156115
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17H03224
[Journal Article] Electrodeless photo-assisted electrochemical etching of GaN using a H3PO4-based solution containing S2O8 2? ions2019
- Author(s)
  Toguchi Masachika、Miwa Kazuki、Horikiri Fumimasa、Fukuhara Noboru、Narita Yoshinobu、Yoshida Takehiro、Sato Taketomo
- Journal Title
  
  Applied Physics Express
  
  Volume: 12 Issue: 6 Pages: 066504-066504
- DOI
  10.7567/1882-0786/ab21a1
- NAID
  120006847765
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-17H03224
[Journal Article] Anisotropic Electrochemical Etching of Porous Gallium Nitride by Sub-Bandgap Absorption Due to Franz-Keldysh Effect2019
- Author(s)
  M. Toguchi, K. Miwa, T. Sato
- Journal Title
  
  Journal of The Electrochemical Society
  
  Volume: 166 Issue: 12 Pages: H510-H512
- DOI
  10.1149/2.0551912jes
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06421, KAKENHI-PROJECT-17H03224
[Journal Article] Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions2019
- Author(s)
  T. Sato, M. Toguchi, Y. Komatsu, and K. Uemur
- Journal Title
  
  IEEE Transactions on Semiconductor Manufacturing
  
  Volume: 32 Issue: 4 Pages: 483-488
- DOI
  10.1109/tsm.2019.2934727
- NAID
  120006783672
- Peer Reviewed
- Data Source
  KAKENHI-PLANNED-16H06421, KAKENHI-PROJECT-17H03224
[Journal Article] Effects of a photo-assisted electrochemical etching process removing dry-etching damage in GaN2018
- Author(s)
  S. Matsumoto, M. Toguchi, K. Takeda, T. Narita, T. Kachi, and T. Sato
- Journal Title
  
  Jpn. J. Appl. Phys.
  
  Volume: 57 Issue: 12 Pages: 121001-121001
- DOI
  10.7567/jjap.57.121001
- NAID
  120006764183
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06421, KAKENHI-PROJECT-17H03224
[Journal Article] Precise Structural Control of GaN Porous Nanostructures Utilizing Anisotropic Electrochemical and Chemical Etching for the Optical and Photoelectrochemical Applications2017
- Author(s)
  Kumazaki Yusuke、Matsumoto Satoru、Sato Taketomo
- Journal Title
  
  Journal of The Electrochemical Society
  
  Volume: 164 Issue: 7 Pages: H477-H483
- DOI
  10.1149/2.0771707jes
- NAID
  120006313473
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PROJECT-17H03224, KAKENHI-PROJECT-15K13937
[Journal Article] 光電気化学反応を利用した窒化物半導体の低損傷エッチングと電子デバイスへの応用2017
- Author(s)
  植村圭佑，松本悟，渡久地政周，伊藤圭亮，佐藤威友
- Journal Title
  
  電子情報通信学会技術研究報告
  
  Volume: 117 Pages: 23-26
- Data Source
  KAKENHI-PROJECT-17H03224
[Journal Article] Precise thickness control in recess etching of AlGaN/GaN hetero-structure using photocarrier-regulated electrochemical process2017
- Author(s)
  Kumazaki Yusuke、Uemura Keisuke、Sato Taketomo、Hashizume Tamotsu
- Journal Title
  
  J. Appl. Phys.
  
  Volume: 121 Issue: 18 Pages: 184501-184501
- DOI
  10.1063/1.4983013
- NAID
  120006463556
- Peer Reviewed / Open Access
- Data Source
  KAKENHI-PLANNED-16H06421, KAKENHI-PROJECT-17H03224, KAKENHI-PROJECT-15K13937
[Journal Article] Formation of GaN porous structures with improved structural controllability by photoassisted electrochemical etching2016
- Author(s)
  Y. Kumazaki, Z. Yatabe, and T. Sato
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: 55 Issue: 4S Pages: 04EJ12-04EJ12
- DOI
  10.7567/jjap.55.04ej12
- NAID
  120005981365
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15K13937, KAKENHI-PROJECT-14J01371, KAKENHI-PROJECT-25289079
[Journal Article] Large photocurrents in GaN porous structures with a redshift of the photoabsorption edge2016
- Author(s)
  T. Sato, Y. Kumazaki, H. Kida, A. Watanabe, Z. Yatabe and S. Matsuda
- Journal Title
  
  Semiconductor Science and Technology
  
  Volume: 31 Issue: 1 Pages: 014012-014012
- DOI
  10.1088/0268-1242/31/1/014012
- NAID
  120005905606
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15K13937, KAKENHI-PROJECT-14J01371, KAKENHI-PROJECT-25289079
[Journal Article] 電気化学加工技術を利用したAlGaN/GaNヘテロ構造の低損傷リセスエッチング2016
- Author(s)
  熊崎祐介, 植村圭佑, 佐藤威友
- Journal Title
  
  電子情報通信学会信学技報
  
  Volume: 116 Pages: 45-50
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K13937
[Journal Article] Electrochemical formation of N-type GaN and N-type InP porous structures for chemical sensor applications2016
- Author(s)
  T. Sato, X. Zhang, K. Ito, S. Matsumoto and Y. Kumazaki
- Journal Title
  
  Proceeding of 2016 IEEE SENSORS
  
  Volume: 2016 Pages: 7808443-7808443
- DOI
  10.1109/icsens.2016.7808443
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15K13937
[Journal Article] 電気化学的手法によるGaN多孔質構造の形成と紫外光応答特性2015
- Author(s)
  喜田弘文, 熊崎祐介, 谷田部然治, 佐藤威友
- Journal Title
  
  信学技報
  
  Volume: 115-170 Pages: 51-54
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-15K13937
[Journal Article] Bias-dependent Photoabsorption Properties of GaN Porous Structures under Back-side Illumination2015
- Author(s)
  T. Sato, H. Kida, Y. Kumazaki, and Z. Yatabe
- Journal Title
  
  ECS Transactions
  
  Volume: 69 Issue: 2 Pages: 161-166
- DOI
  10.1149/06902.0161ecst
- Peer Reviewed / Acknowledgement Compliant / Open Access
- Data Source
  KAKENHI-PROJECT-15K13937, KAKENHI-PROJECT-14J01371, KAKENHI-PROJECT-25289079
[Journal Article] Formation of GaN-Porous Structures Using Photo-Assisted Electrochemical Process in Back-Side Illumination Mode2015
- Author(s)
  A. Watanabe, Y. Kumazaki, Z. Yatabe, and T. Sato
- Journal Title
  
  ECS Electrochemical Letters
  
  Volume: 4 Issue: 5 Pages: H11-H13
- DOI
  10.1149/2.0031505eel
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14J01371, KAKENHI-PROJECT-25289079
[Journal Article] 分光電気化学法によるGaN/電解液界面の評価とナノ構造形成への応用2015
- Author(s)
  熊崎祐介, 渡部晃生, 谷田部然治, 佐藤威友
- Journal Title
  
  信学技報
  
  Volume: 115-63 Pages: 63-66
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289079
[Journal Article] 電気化学的手法によるGaN多孔質構造の形成と紫外光応答特性2015
- Author(s)
  喜田弘文, 熊崎祐介, 谷田部然治, 佐藤威友
- Journal Title
  
  信学技報
  
  Volume: 115-170 Pages: 51-54
- Acknowledgement Compliant
- Data Source
  KAKENHI-PROJECT-25289079
[Journal Article] Correlation between Structural and Photoelectrochemical Properties of GaN Porous Nanostructures Formed by Photo-Assisted Electrochemical Etching2014
- Author(s)
  Y. Kumazaki, A. Watanabe, Z. Yatabe, and T. Sato
- Journal Title
  
  Journal of The Electrochemical Society
  
  Volume: 141 Issue: 10 Pages: H705-H709
- DOI
  10.1149/2.1101410jes
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-14J01371, KAKENHI-PROJECT-25289079
[Journal Article] Formation and Photoelectrical Measurements of Pt Schottky Interfaces on InP Porous Structures2013
- Author(s)
  R. Jinbo, Y. Kumazaki, Z. Yatabe and T. Sato
- Journal Title
  
  ECS Transactions
  
  Volume: 50 Pages: 247-252
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289079
[Journal Article] 電気化学的手法によるInP多孔質構造の光吸収特性と光電変換2013
- Author(s)
  熊崎祐介, 神保亮平, 谷田部然治, 佐藤威友
- Journal Title
  
  信学技報
  
  Volume: vol. 113, no. 39, ED2013-27 Pages: 61-64
- Data Source
  KAKENHI-PROJECT-25289079
[Journal Article] Investigation on Optical Absorption Properties of Electrochemically Formed Porous InP using Photoelectric Conversion Devices2013
- Author(s)
  Y. Kumazaki, T. Kudo, Z. Yatabe and T. Sato
- Journal Title
  
  Applied Surface Science
  
  Volume: 279 Pages: 116-120
- DOI
  10.1016/j.apsusc.2013.04.046
- NAID
  120005322421
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-25289079
[Journal Article] Investigation on Optical Absorption Properties of Electrochemically Formed Porous InP using Photoelectric Conversion Devices2013
- Author(s)
  Y. Kumazaki, T. Kudo, Z. Yatabe and T. Sato
- Journal Title
  
  Applied Surface Science
  
  Volume: 印刷中
- NAID
  120005322421
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686028
[Journal Article] Large photocurrent-response observed at Pt/InP Schottky interface formed on anodic porous structure2012
- Author(s)
  R. Jinbo, T. Kudo, Z. Yatabe, T. Sato
- Journal Title
  
  Thin Solid Films
  
  Volume: vol. 520 Issue: 17 Pages: 5710-5714
- DOI
  10.1016/j.tsf.2012.04.031
- NAID
  120004405512
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686028
[Journal Article] Electrochemical Functionalization of InP Porous Nanostructures with a GOD Membrane for Amperometric Glucose Sensors2010
- Author(s)
  T.Sato, A.Mizohata, T.Hashizume
- Journal Title
  
  Journal of The Electrochemical Society 157
- NAID
  120001788352
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686028
[Journal Article] Low Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching2010
- Author(s)
  T.Sato, N.Yoshizawa, H.Okazaki, T.Hashizume
- Journal Title
  
  ECS Transactions
  
  Volume: 25 Pages: 83-88
- NAID
  120003783345
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686028
[Journal Article] Low Reflectance Surface Observed on InP Porous Structures after Photo electrochemical Etching2010
- Author(s)
  T.Sato, N.Yoshizawa, H. Okazaki, T.Hashizume
- Journal Title
  
  ECS Transactions
  
  Volume: 25 Pages: 83-88
- NAID
  120003783345
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21656078
[Journal Article] Realization of an extremely low reflectance surface based on InP porous nanostru ctures for application to photoelectrochemical solar cells2010
- Author(s)
  T.Sato, N.Yoshizawa, T.Hashizume
- Journal Title
  
  Thin solid films 未定(掲載決定)
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686028
[Journal Article] Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells2010
- Author(s)
  T.Sato, N.Yoshizawa, T.Hashizume
- Journal Title
  
  Thin solid films (掲載決定)
- NAID
  120002208930
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21656078
[Journal Article] Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells2010
- Author(s)
  T.Sato, N.Yoshizawa, T.Hashizume
- Journal Title
  
  Thin Solid Films
  
  Volume: 518 Pages: 4399-4402
- NAID
  120002208930
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686028
[Journal Article] Realization of an extremely low reflectance surface based on InP porous nanostructures for application to photoelectrochemical solar cells2010
- Author(s)
  T.Sato, N.Yoshizawa T.Hashizume
- Journal Title
  
  Thin Solid Films
  
  Volume: 518 Pages: 4399-4402
- NAID
  120002208930
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21656078
[Journal Article] Realization of an extremely low reflectance溶液pHとの関係(デバイスDSB)。surface based on InP porous nanostructuresfor application to photoelectrochemical solar cells2010
- Author(s)
  T. Sato, N. Yoshizawa, T. Hashizume
- Journal Title
  
  Thin Solid Films
  
  Volume: vol. 518 Issue: 15 Pages: 4399-4402
- DOI
  10.1016/j.tsf.2010.02.029
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686028
[Journal Article] Electrochemical Functionalization of InP Porous Nanostructures with a GOD Membrane for Amperometric Glucose Sensors2010
- Author(s)
  T. Sato, A. Mizohata, T. Hashizume
- Journal Title
  
  Journal of The Electrochemical Society
  
  Volume: vol. 157 Issue: 2 Pages: H165-H165
- DOI
  10.1149/1.3264634
- NAID
  120001788352
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686028
[Journal Article] Low Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching2010
- Author(s)
  T. Sato, N. Yoshizawa, H. Okazaki, T.Hashizume
- Journal Title
  
  ECS Transactions
  
  Volume: vol.25,no.42 Issue: 42 Pages: 83-88
- DOI
  10.1149/1.3416205
- NAID
  120003783345
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686028
[Journal Article] Fundamental Study of InP-Based Open-Gate Field Effect Transistors for Application to Liquid-Phase Chemical Sensors2009
- Author(s)
  N.Yoshizawa, T.Sato, T.Hashizume
- Journal Title
  
  Japanese Journal of Applied Physics 48
  
  Pages: 91102-91102
- NAID
  120001821841
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686028
[Journal Article] Fundamental Study of InP-Based Open-Gate Field Effect Transistors for Application to Liquid-Phase Chemical Sensors2009
- Author(s)
  N. Yoshizawa, T. Sato, T. Hashizume
- Journal Title
  
  Japanese Journal of Applied Physics
  
  Volume: vol. 48 Issue: 9 Pages: 91102-91102
- DOI
  10.1143/jjap.48.091102
- NAID
  120001821841
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-21686028
[Journal Article] Electrochemical formation of InP porous nano structures and its application to amperometric chemical sensors2008
- Author(s)
  T. Sato, A. Mizohata, N. Yos hizawa, T. Hashizume
- Journal Title
  
  phys. stat. sol.(c) 5
  
  Pages: 3475-3478
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760208
[Journal Article] Amperometric detection of hydrogen peroxide using InP porous nanostructures2008
- Author(s)
  T. Sato, A. Mizohata, N. Yos hizawa, T. Hashizume
- Journal Title
  
  Applied Physics Express 1
  
  Pages: 51202-51202
- NAID
  10025080209
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760208
[Journal Article] Photoelectrochemical Etching and Removal of the Irregular Top Layer Formed on InP Porous Nanostructures2008
- Author(s)
  T. Sato, A. Mizohata
- Journal Title
  
  Electrochemical and Solid-State Letters 11
- NAID
  120000952703
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760208
[Journal Article] Photoelectrochemical Etching and Removal of the Irregular Top Layer Formed on InP Porous Nanostructures2008
- Author(s)
  T. Sato, A. Mizohata
- Journal Title
  
  Electrochemical and Solid-State Letters vol.11, no.5
  
  Pages: 111-113
- NAID
  120000952703
- URL
  http://eprints.lib.hokudai.ac.jp/dspace/handle/2115/33871
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760208
[Journal Article] Amperometric detection of hydrogen peroxide using InP porous nanostructures2008
- Author(s)
  T. Sato, A. Mizohata, N. Yoshizawa, T. Hashizume
- Journal Title
  
  Applied Physics Express vol.1, no.5
  
  Pages: 51202-51202
- NAID
  10025080209
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760208
[Journal Article] Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water2007
- Author(s)
  N. Shiozaki, T. Sato, T. Hashizume
- Journal Title
  
  Japanese Journal of Applied Physics 46
  
  Pages: 1471-1473
- NAID
  10018900586
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760208
[Journal Article] Electrochemical Formation of Size-Controlled InP Nanostructures Using Anodic and Cathodic Reactions2007
- Author(s)
  T. Sato, T. Fujino, T. Hashizume
- Journal Title
  
  Electrochemical and Solid-State Letters vol.10, no.5
  
  Pages: 153-155
- NAID
  120000968293
- URL
  http://eprints.lib.hokudai.ac.jp/dspace/handle/2115/20209
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760208
[Journal Article] Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water2007
- Author(s)
  Nanako Shiozaki, Taketomo Sato, Tamotsu Hashizume
- Journal Title
  
  Jpn. J. Appl. Phys 46(in press)
- NAID
  10018900586
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Size-Controlled Porous Nanostructures Formed on InP(001) Substrates by Two-Step Electrochemical Process2007
- Author(s)
  T. Fujino, T. Sato, T. Hashizume
- Journal Title
  
  Japanese Journal of Applied Physics Vol. 46, No. 7A
  
  Pages: 4375-4380
- NAID
  40015465563
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760208
[Journal Article] Size-Controlled Porous Nanostructures Formed on InP (001) Substrates by Two-Step Electrochemical Process2007
- Author(s)
  T. Fujino, T. Sato, T. Hashizume
- Journal Title
  
  Japanese Journal of Applied Physics 46
  
  Pages: 4375-4380
- NAID
  40015465563
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760208
[Journal Article] Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water2007
- Author(s)
  N.Shiozaki, T.Sato, T.Hashizume
- Journal Title
  
  Jpn. J. Appl. Phys. 46
  
  Pages: 1471-1473
- NAID
  10018900586
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Electrochemical Formation of Size-Controlled InP Nanostructures Using Anodic and Cathodic Reactions2007
- Author(s)
  T. Sato, T. Fujino, T. Hashizume
- Journal Title
  
  Electrochemical and Solid-State Letters 10
- NAID
  120000968293
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19760208
[Journal Article] Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water2007
- Author(s)
  Nanako Shiozaki, Taketomo Sato, Tamotsu Hashizume
- Journal Title
  
  Jpn. J. Appl. Phys. 46
  
  Pages: 1471-1473
- NAID
  10018900586
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution With Glycol and Water2007
- Author(s)
  N. Shiozaki, T. Sato, T. Hashizume
- Journal Title
  
  Jpn. J. Appl. Phys. 46
  
  Pages: 1471-1473
- NAID
  10018900586
- Peer Reviewed
- Data Source
  KAKENHI-PROJECT-19032001
[Journal Article] Selective molecular beam epitaxy growth of size- and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism2006
- Author(s)
  T.Sato, T.Oikawa, H.Hasegawa, T.Hashizume
- Journal Title
  
  J. Vac. Sci. Technol B 24
  
  Pages: 2087-2092
- NAID
  120000959106
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Growth Simulation and Actual MBE Growth of Triangular GaAs Nanowires on Patterned(111)B Substrates2006
- Author(s)
  I.Tamai, T.Sato, H.Hasegawa, T.Hashizume
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology Vol.4
  
  Pages: 19-24
- NAID
  130004933903
- Data Source
  KAKENHI-PROJECT-17656099
[Journal Article] Liquid-phase sensors using open-gate AlGaN/GaN high electron mobility transistor structure2006
- Author(s)
  T.Kokawa, T.Sato, H.Hasegawa, T.Hashizume
- Journal Title
  
  J. Vac. Sci. Technol. B 24
  
  Pages: 1972-1976
- NAID
  120000956602
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Electrochemical Formation of Chaotic and Regular Nanostructures on (001) and (111)B InP Substrates and Their Photoluminescence Characterizations2006
- Author(s)
  T.Fujino, T.Kimura, T.Sato, H.Hasegawa, T.Hashizume
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology Vol.4
  
  Pages: 184-191
- NAID
  130004438993
- Data Source
  KAKENHI-PROJECT-16760239
[Journal Article] Selective molecular beam epitaxy growth of size-and position-controlled GaN/AlGaN nanowires on nonplanar (0001) substrates and its growth mechanism2006
- Author(s)
  T.Sato, T.Oikawa, H.Hasegawa, T.Hashizume
- Journal Title
  
  J. Vac. Sci. Technol. B 24
  
  Pages: 2087-2092
- NAID
  120000959106
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Liquid Phase Sensors Using Open-Gate AlGaN/GaN HEMT Structure2006
- Author(s)
  T.Kokawa, T.Sato, H.Hasegawa, T.Hashizume
- Journal Title
  
  J.Vac.Sci.Technol B 26(in press)
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Liquid-phase sensors using open-gate AlGaN/GaN high electron mobility transistor structure2006
- Author(s)
  T.Kokawa, T.Sato, H.Hasegawa, T.Hashizume
- Journal Title
  
  J. Vac. Sci. Technol B 24
  
  Pages: 1972-1976
- NAID
  120000956602
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Growth Simulation and Actual MBE Growth of Triangular GaAs Nanowires on Patterned (111)B Substrates2006
- Author(s)
  I.Tamai, T.Sato, H.Hasegawa, T.Hashizume
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology Vol.4
  
  Pages: 19-24
- NAID
  130004933903
- Data Source
  KAKENHI-PROJECT-16760239
[Journal Article] Electrochemicai Formation of Chaotic and Regular Nanostractures on (001) and (111)B InP Substrates and Their Photpluminescence Characterizations2006
- Author(s)
  T.Fujino, T.Kimura, T.Sato, H.Hasegawa, T.Hashizume
- Journal Title
  
  e-Journal of Surface Science and Nanotechnology Vol.4
  
  Pages: 184-191
- Data Source
  KAKENHI-PROJECT-17656099
[Journal Article] Growth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates2005
- Author(s)
  T.Sato, I.Tamai, H.Hasegawa
- Journal Title
  
  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 23(4)
  
  Pages: 1706-1713
- NAID
  120000958805
- Data Source
  KAKENHI-PROJECT-16760239
[Journal Article] Cross-sectional Evolution and Its Mechanism during Selective MBE Growth of GaAs Quantum Wires on (111)B Substrates2005
- Author(s)
  I.Tamai, T.Sato, H.Hasegawa
- Journal Title
  
  JAPANESE JOURNAL OF APPLIED PHYSICS 44(4B)
  
  Pages: 2652-2656
- NAID
  10022540457
- Data Source
  KAKENHI-PROJECT-17656099
[Journal Article] Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy2005
- Author(s)
  N.Shiozaki, T.Sato, H.Hasegawa
- Journal Title
  
  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 23(4)
  
  Pages: 1714-1721
- NAID
  120000961770
- Data Source
  KAKENHI-PROJECT-17656099
[Journal Article] Electrochemical processes for formation, processing and gate control of III-V semiconductor nanostructures2005
- Author(s)
  H.Hasegawa, T.Sato
- Journal Title
  
  ELECTROCHIMICAACTA 50(15)
  
  Pages: 3015-3027
- NAID
  120000964124
- Data Source
  KAKENHI-PROJECT-16760239
[Journal Article] Cross-sectional Evolution and Its Mechanism during Selective MBE Growth of GaAs Quantum Wires on (111)B Substrates2005
- Author(s)
  I.Tamai, T.Sato, H.Hasegawa
- Journal Title
  
  JAPANESE JOURNAL OF APPLIED PHYSICS (in press)
- NAID
  10022540457
- Data Source
  KAKENHI-PROJECT-16760239
[Journal Article] Study on ECR Dry Etching and Selective MBE Growth of AlGaN/GaN for Fabrication of Quantum Nanostructures on GaN(0001) Substrates2005
- Author(s)
  T.Oikawa, F.Ishikawa, T.Sato, T.Hashizume, H.Hasegawa
- Journal Title
  
  Appl. Sur. Sci. 244
  
  Pages: 84-87
- NAID
  120000953792
- Description
  「研究成果報告書概要(和文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Growth kinetics and theoretical modeling of selective molecular beam epitaxy for growth of GaAs nanowires on nonplanar (001) and (111)B substrates2005
- Author(s)
  T.Sato, I.Tamai, H.Hasegawa
- Journal Title
  
  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 23(4)
  
  Pages: 1706-1713
- NAID
  120000958805
- Data Source
  KAKENHI-PROJECT-17656099
[Journal Article] Study on ECR Dry Etching and Selective MBE Growth of AlGaN/GaN for Fabrication of Quantum Nanostructures on GaN(000l) Substrates2005
- Author(s)
  T.Oikawa, F.Ishikawa, T.Sato, T.Hashizume, H.Hasegawa
- Journal Title
  
  Appl. Sur. Sci. 244
  
  Pages: 84-87
- Description
  「研究成果報告書概要(欧文)」より
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation2005
- Author(s)
  N.Shiozaki, S.Anantathanasarn, T.Sato, T.Hashizume, H.Hasegawa
- Journal Title
  
  Applied Surface Science (in press)
- NAID
  120000955195
- Data Source
  KAKENHI-PROJECT-16760239
[Journal Article] Effects of surface states and Si-interlayer based surface passivation on GaAs quantum wires grown by selective molecular beam epitaxy2005
- Author(s)
  N.Shiozaki, T.Sato, H.Hasegawa
- Journal Title
  
  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 23(4)
  
  Pages: 1714-1721
- NAID
  120000961770
- Data Source
  KAKENHI-PROJECT-16760239
[Journal Article] Study on ECR Dry Etching and Selective MBE Growth of AlGaN/GaN for Fabrication of Quantum Nanostructures on GaN (0001) Substrates2005
- Author(s)
  T.Oikawa, F.Ishikawa, T.Sato, T.Hashizume, H.Hasegawa
- Journal Title
  
  Applied Surface Science 244(1-4)
  
  Pages: 84-87
- NAID
  120000953792
- Data Source
  KAKENHI-PROJECT-16760239
[Journal Article] Study on ECR Dry Etching and Selective MBE Growth of AlGaN/GaN for Fabrication of Quantum Nanostructures on GaN (0001) Substrates2005
- Author(s)
  T.Oikawa, F.Ishikawa, T.Sato, T.Hashizume, H.Hasegawa
- Journal Title
  
  Applied Surface Science (in press)
- NAID
  120000953792
- Data Source
  KAKENHI-PROJECT-16760239
[Journal Article] Growth of AlGaN/GaN Quantum Wire Structures by RF-Radical Assisted MBE on Pre-Patterned Substrates2005
- Author(s)
  T.Sato, T.Oikawa, H.Hasegawa
- Journal Title
  
  JAPANESE JOURNAL OF APPLIED PHYSICS 44(4B)
  
  Pages: 2487-2491
- Data Source
  KAKENHI-PROJECT-17656099
[Journal Article] Growth of AlGaN/GaN Quantum Wire Structures by RF-Radical Assisted MBE on Pre-Patterned Substrates2005
- Author(s)
  T.Sato, T.Oikawa, T.Hashizume, H.Hasegawa
- Journal Title
  
  JAPANESE JOURNAL OF APPLIED PHYSICS (in press)
- Data Source
  KAKENHI-PROJECT-16760239
[Journal Article] Study on ECR Dry Etching and Selective MBE Growth of AlGaN/GaN for Fabrication of Quantum Nanostructures on GaN (0001) Substrates2005
- Author(s)
  T.Oikawa, F.Ishikawa, T.Sato, T.Hashizume, H.Hasegawa
- Journal Title
  
  Applied Surface Science 244(1-4)
  
  Pages: 84-87
- NAID
  120000953792
- Data Source
  KAKENHI-PROJECT-17656099
[Journal Article] Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation2005
- Author(s)
  N.Shiozaki, S.Anantathanasarn, T.Sato, T.Hashizume, H.Hasegawa
- Journal Title
  
  Applied Surface Science 244(1-4)
  
  Pages: 71-74
- NAID
  120000955195
- Data Source
  KAKENHI-PROJECT-17656099
[Journal Article] Electrochemical processes for formation, processing and gate control of III-V semiconductor nanostructures2005
- Author(s)
  H.Hasegawa, T.Sato
- Journal Title
  
  ELECTROCHIMICA ACTA 50(15)
  
  Pages: 3015-3027
- NAID
  120000964124
- Data Source
  KAKENHI-PROJECT-17656099
[Journal Article] Growth of AlGaN/GaN Quantum Wire Structures by RF-Radical Assisted MBE on Pre-Patterned Substrates2005
- Author(s)
  T.Sato, T.Oikawa, H.Hasegawa
- Journal Title
  
  JAPANESE JOURNAL OF APPLIED PHYSICS 44(4B)
  
  Pages: 2487-2491
- Data Source
  KAKENHI-PROJECT-16760239
[Journal Article] Study on ECR Dry Etching and Selective MBE Growth of AlGaN/GaN for Fabrication of Quantum Nanostructures on GaN(0001) Substrates2005
- Author(s)
  T.Oikawa, F.Ishikawa, T.Sato, T.Hashizume, H.Hasegawa
- Journal Title
  
  Appl.Sur.Sci 244
  
  Pages: 84-87
- NAID
  120000953792
- Data Source
  KAKENHI-PROJECT-17360133
[Journal Article] Surface-related reduction of photoluminescence in GaAs quantum wires and its recovery by new passivation2005
- Author(s)
  N.Shiozaki, S.Anantathanasarn, T.Sato, T.Hashizume, H.Hasegawa
- Journal Title
  
  Applied Surface Science 244(1-4)
  
  Pages: 71-74
- NAID
  120000955195
- Data Source
  KAKENHI-PROJECT-16760239
[Journal Article] Cross-sectional Evolution and Its Mechanism during Selective MBE Growth of GaAs Quantum Wires on (111)B Substrates2005
- Author(s)
  I.Tamai, T.Sato, H.Hasegawa
- Journal Title
  
  JAPANESE JOURNAL OF APPLIED PHYSICS 44(4B)
  
  Pages: 2652-2656
- NAID
  10022540457
- Data Source
  KAKENHI-PROJECT-16760239
[Journal Article] Hexagonal binary decision diagram quantum circuit approach for ultra-low power III-V quantum LSIs2004
- Author(s)
  H.Hasegawa, S.Kasai, T.Sato
- Journal Title
  
  IEICE TRANSACTIONS ON ELECTRONICS E87C
  
  Pages: 1757-1768
- NAID
  110003214788
- Data Source
  KAKENHI-PROJECT-16760239
[Journal Article] Selective molecular beam epitaxy growth of GaAs hexagonal nanowire networks on (III)B patterned substrates2004
- Author(s)
  S.Yoshida, I.Tamai, T.Sato, H.Hasegawa
- Journal Title
  
  JAPANESE JOURNAL OF APPLIED PHYSICS 43(4B)
  
  Pages: 2064-2068
- Data Source
  KAKENHI-PROJECT-16760239
[Journal Article] Evolution mechanism of heterointerface cross-section during growth of GaAs ridge quantum wires by selective molecular beam epitaxy2004
- Author(s)
  T.Sato, I.Tamai, S.Yoshida, H.Hasegawa
- Journal Title
  
  APPLIED SURFACE SCIENCE 234
  
  Pages: 11-15
- NAID
  120000956218
- Data Source
  KAKENHI-PROJECT-16760239
[Journal Article] Growth kinetics and modeling of selective molecular beam epitaxial growth of GaAs ridge quantum wires on pre-patterned nonplanar substrates2004
- Author(s)
  T.Sato, I.Tamai, H.Hasegawa
- Journal Title
  
  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 22
  
  Pages: 2266-2274
- NAID
  120000954829
- Data Source
  KAKENHI-PROJECT-16760239
[Journal Article] Formation of high-density GaAs hexagonal nano-wire networks by selective MBE growth on pre-patterned (001) substrates2004
- Author(s)
  I.Tamai, T.Sato, H.Hasegawa
- Journal Title
  
  PHYSICA E 21
  
  Pages: 521-526
- NAID
  120000954915
- Data Source
  KAKENHI-PROJECT-16760239
[Patent] 構造体の製造方法および中間構造体2019
- Inventor(s)
  堀切文正，福原昇，佐藤威友，渡久地政周
- Industrial Property Rights Holder
  堀切文正，福原昇，佐藤威友，渡久地政周
- Industrial Property Rights Type
  特許
- Filing Date
  2019
- Data Source
  KAKENHI-PROJECT-17H03224
[Patent] 構造体の製造方法と製造装置および中間構造体2019
- Inventor(s)
  堀切文正，福原昇，佐藤威友，渡久地政周
- Industrial Property Rights Holder
  堀切文正，福原昇，佐藤威友，渡久地政周
- Industrial Property Rights Type
  特許
- Filing Date
  2019
- Acquisition Date
  2020
- Data Source
  KAKENHI-PLANNED-16H06421
[Patent] エッチング方法及びエッチング装置2017
- Inventor(s)
  佐藤威友、熊崎祐介、橋詰保
- Industrial Property Rights Holder
  佐藤威友、熊崎祐介、橋詰保
- Industrial Property Rights Type
  特許
- Industrial Property Number
  2017-095458
- Filing Date
  2017
- Data Source
  KAKENHI-PROJECT-17H03224
[Patent] エッチング方法及びエッチング装置2017
- Inventor(s)
  佐藤威友、熊崎祐介、橋詰保
- Industrial Property Rights Holder
  佐藤威友、熊崎祐介、橋詰保
- Industrial Property Rights Type
  特許
- Filing Date
  2017
- Data Source
  KAKENHI-PROJECT-15K13937
[Patent] センサ及びセンサの製造方法2010
- Inventor(s)
  佐藤威友
- Industrial Property Rights Holder
  国立大学法人北海道大学
- Industrial Property Number
  2010-094012
- Filing Date
  2010-04-15
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] Photoelectrochemical Etching of III-Nitride Semiconductors for Nanostructure Fabrication2024
- Author(s)
  T. Sato
- Organizer
  International Conference on Advanced Functional Materials and Devices (AFMD2024)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K26131
[Presentation] Effects of SiO2-Cap Annealing Prior to Interface Formation on Properties of Al2O3/p-type GaN Interfaces2024
- Author(s)
  Y. Jiao, T. Nukariya, U. Takatsu, T. Sato, and M. Akazawa
- Organizer
  16th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K26131
[Presentation] コンタクトレスPECエッチングを用いたAlGaN/GaN HFETの素子間分離2023
- Author(s)
  沖勇吾，富樫拓也，越智亮太，佐藤威友
- Organizer
  第84 回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K26131
[Presentation] Low-damage Photo-electrochemical Etching and Electrochemical Characterization of p-GaN Surface2023
- Author(s)
  U. Takatsu, K. Kubo, and T. Sato
- Organizer
  14th International Conference on Nitride Semiconductors (ICNS)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K26131
[Presentation] Mgドープp-GaNを用いたMOS構造のサブバンドギャップ光支援C-V特性2023
- Author(s)
  忽滑谷崇秀、玉村祐也、高津海、佐藤威友、赤澤正道
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] Current Non-linearity of GaN-based MIS HEMTs in Forward Bias Region2023
- Author(s)
  T. Sato, and R. Ochi
- Organizer
  The International Conference on Materials and Systems for Sustainability (ICMaSS2023)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K26131
[Presentation] n型GaN基板上に形成されたp型GaN層に対する低損傷光電気化学エッチングとその電気化学的評価2023
- Author(s)
  髙津海、久保広大、佐藤威友
- Organizer
  電子情報通信学会電子デバイス研究会
- Data Source
  KAKENHI-PROJECT-23K26131
[Presentation] 光電気化学エッチングを施したp-GaN MOS界面の特性に対する界面形成プロセスの影響2023
- Author(s)
  焦一寧, 忽滑谷崇秀, 高津海, 佐藤威友, 赤澤正道
- Organizer
  第71 回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-23K26131
[Presentation] AlGaN/GaN ヘテロ構造の光電気化学エッチングと反応速度の制御2023
- Author(s)
  富樫拓也、沖勇吾、大澤由斗、越智亮太、佐藤威友
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] 光電気化学エッチングを施したp-GaNを用いたMOS構造のサブバンドギャップ光支援C-V測定2023
- Author(s)
  忽滑谷崇秀, 焦一寧，高津海, 佐藤威友, 赤澤正道
- Organizer
  第84 回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K26131
[Presentation] AlGaN/GaN HEMTsにおけるフェルミレベルピンニングに対するPECエッチングの効果2023
- Author(s)
  越智亮太、富樫拓也、大澤由斗、堀切文正、福原昇、赤澤正道、佐藤威友
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] AlGaN/GaNヘテロ構造の光電気化学エッチングと反応速度の制御2023
- Author(s)
  富樫拓也、沖勇吾、大澤由斗、越智亮太、赤澤正道、佐藤威友
- Organizer
  第84 回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K26131
[Presentation] Interface Properties of p-type GaN MOS Structures Examined by Sub-Bandgap-Light-Assisted Capacitance-Voltage Measurement2023
- Author(s)
  T. Nukariya, J. Yining, U. Takatsu, T. Sato, and M. Akazawa
- Organizer
  14th International Conference on Nitride Semiconductors (ICNS)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K26131
[Presentation] Influence of the parallel conduction on the current non-linearity of GaN based MIS-HEMTs in the forward bias region2023
- Author(s)
  R. Ochi, and T. Sato
- Organizer
  46th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K26131
[Presentation] MOS technologies for GaN power transistors2023
- Author(s)
  T. Hashizume, and T. Sato
- Organizer
  023 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-23K26131
[Presentation] GaNのコンタクトレス光電気化学（CL-PEC）エッチングにおける溶液pHの影響2023
- Author(s)
  大澤由斗、赤澤正道、佐藤威友
- Organizer
  第84 回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K26131
[Presentation] p-GaN表面層に対する低損傷PECエッチングとその電気化学的評価(2)2023
- Author(s)
  高津海、佐藤威友
- Organizer
  第84 回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-23K26131
[Presentation] p-GaN 表面層に対する低損傷 PEC エッチングとその電気化学的評価2023
- Author(s)
  高津海、久保広太、佐藤威友
- Organizer
  第70回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] Contactless-Photoelectrochemical (CL-PEC) etching on process-damaged n-GaN surface2022
- Author(s)
  Yoshito Osawa, Hiroki Ogami, Masachika Toguchi, Fumimasa Horikiri, Noboru Fukuhara, and Taketomo Sato
- Organizer
  14th Topical Workshop on Heterostructure Microelectronics (TWHM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] 光電気化学(PEC)エッチングの自己停止とAlGaN/GaN HEMTのゲートリセス加工2022
- Author(s)
  富樫拓也、伊藤滉朔、越智亮太、佐藤威友
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] AlGaN/GaN MIS-HEMTsにおけるパラレル伝導評価2022
- Author(s)
  越智亮太，橋詰保，佐藤威友
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] Self-terminating photo-electrochemical (PEC) etching for recessed-gate fabrication on AlGaN/GaN HEMTs2022
- Author(s)
  Takuya Togashi, Kosaku Ito and Taketomo Sato
- Organizer
  2022 International Conference on Solid State Devices and Materials (SSDM 2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] n-GaN加工表面に対するコンタクトレス光電気化学(CL-PEC)エッチング (2)2022
- Author(s)
  大澤由斗、大神洸貴、越智亮太、堀切文正、福原昇、佐藤威友
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] Effect of the parallel conduction on the current linearity in AlGaN/GaN MIS-HEMTs2022
- Author(s)
  Ryota Ochi, Taketomo Sato
- Organizer
  The 10th Asia-Pacific Workshop on Widegap Semiconductors (APWS2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] Fabrication of Recessed-gate AlGaN/GaN HEMTs by Low-Damage Contactless Photo-Electrochemical Etching2022
- Author(s)
  M. Toguchi, K. Miwa, F. Horikiri, N. Fukuhara, Y. Narita, O. Ichikawa, R. Isono, T. Tanaka, and T. Sato
- Organizer
  14th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, online
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] 電気化学反応を利用した窒化ガリウムのウェットエッチングと機能性材料2022
- Author(s)
  佐藤威友、渡久地政周
- Organizer
  電子情報通信学会電子デバイス研究会
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] Mgドープp-GaNを用いたMOS構造のC-V特性に対する光電気化学エッチングの効果2022
- Author(s)
  忽滑谷崇秀、玉村祐也、久保広大、佐藤威友、赤澤正道
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] n型及びp型GaN表面の電気化学的評価2022
- Author(s)
  高津海、久保広太、佐藤威友
- Organizer
  第83回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] Effect of parallel conduction on the current linearity of AlGaN/GaN MIS-HEMTs2022
- Author(s)
  Ryota Ochi, Tamotsu Hashizume, Taketomo Sato
- Organizer
  14th Topical Workshop on Heterostructure Microelectronics (TWHM2022)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] Low-Damage Etching of Nitride Semiconductors Utilizing Photo-Electrochemical Reactions2022
- Author(s)
  Taketomo Sato
- Organizer
  The AVS 68th International Symposium & Exhibition
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] n-GaN加工損傷面に対するコンタクトレス光電気化学（CL-PEC）エッチング2022
- Author(s)
  大神洸貴，大澤由斗，渡久地政周，堀切文正，福原昇，佐藤威友
- Organizer
  第69回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] 光電気化学エッチング法を用いたAlGaInN/AlGaNリセスゲートHFETの作製2021
- Author(s)
  伊藤滉朔，小松裕斗，渡久地政周，井上暁喜，三好実人，佐藤威友
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Precise control in threshold voltage of AlGaN/GaN HEMTs utilizing a photoelectrochemical (PEC) etching2021
- Author(s)
  T. Sato, M. Toguchi, K. Itoh, T. Hashizume
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] n+GaN基板上n-GaN層の光電気化学(PEC)エッチング時のカソード電極2021
- Author(s)
  福原昇，堀切文正，渡久地政周，三輪和希，大神洸貴，佐藤威友
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] 電子情報通信学会電子デバイス研究会2021
- Author(s)
  渡久地政周、三輪和希、堀切文正、福原昇、成田好伸、市川磨、磯野僚多、田中丈士、佐藤威友
- Organizer
  低損傷コンタクトレス光電気化学エッチングを利用したリセスゲーAlGaN/GaN HEMTsの作製
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] コンタクトレス光電気化学エッチングによるリセスゲートAlGaN/GaN HEMT の作製2021
- Author(s)
  渡久地政周，三輪和希，堀切文正，福原昇，成田好伸，吉田丈洋，佐藤威友
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] Precise control in threshold voltage of AlGaN/GaN HEMTs utilizing a photoelectrochemical (PEC) etching2021
- Author(s)
  T. Sato, M. Toguchi, K. Itoh, T. Hashizume
- Organizer
  The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] コンタクトレス光電気化学エッチングによるリセスゲートAlGaN/GaN HEMT の作製2021
- Author(s)
  渡久地政周，三輪和希，堀切文正，福原昇，成田好伸，吉田丈洋，佐藤威友
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] 電子情報通信学会電子デバイス研究会2021
- Author(s)
  伊藤滉朔、小松裕斗、渡久地政周、井上暁喜、田中さくら、三好実人、佐藤威友
- Organizer
  光電気化学エッチング法を用いたAlGaInN/AlGaN HFETの作製
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] HfSiOx-gate GaN MOS-HEMTs for RF power transistor2021
- Author(s)
  T. Hashizume, R. Ochi, E. Maeda, T. Nabatame, K. Shiozaki and T. Sato
- Organizer
  Society of Photographic Instrumentation Engineers (SPIE), Photonics West 2021, Gallium Nitride Materials and Devices XVI
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] 光電気化学エッチング法を用いたAlGaInN/AlGaNリセスゲートHFETの作製2021
- Author(s)
  伊藤滉朔，小松裕斗，渡久地政周，井上暁喜，三好実人，佐藤威友
- Organizer
  第68回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] HfSiOx-gate AlGaN/GaN MOS HEMTs with improved operation stability2021
- Author(s)
  R. Ochi, T. Nabatame, T. Hashizume, T. Sato
- Organizer
  2021 International Conference on Solid State Devices and Materials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] 光電気化学エッチング法を用いたAlGaInN/AlGaN HFETの作製2021
- Author(s)
  伊藤滉朔、小松祐斗、渡久地政周、井上暁喜、田中さくら、三好実人、佐藤威友
- Organizer
  電子情報通信学会 CPM/ED/LQE研究会
- Data Source
  KAKENHI-PROJECT-21H01389
[Presentation] GaN Wet Etching Process for HEMT Devices2020
- Author(s)
  F. Horikiri, N. Fukuhara, M. Toguchi, and T. Sato
- Organizer
  12th International symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] 加熱による硫酸ラジカルの生成とn-GaN光電気化学（PEC）エッチングへの応用2020
- Author(s)
  三輪和希，大神洸貴，渡久地政周，堀切文正，福原昇，成田好伸，吉田丈洋，佐藤威友
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] Fabrication of Recessed-Gate AlGaN/GaN HEMTs Utilizing Contactless Photo-Electrochemical (CLPEC) Etching2020
- Author(s)
  M. Toguchi, K. Miwa, F. Horikiri, N. Fukuhara, Y. Narita, O. Ichikawa, R. Isono, T. Tanaka, and T. Sato
- Organizer
  2020 Pacific Rim Meeting on Electrochemical and Solid State Science (PRiME 2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Photo-Electrochemical Etching and Porosification of III-Nitride Semiconductors2020
- Author(s)
  T. Sato, and M. Toguchi
- Organizer
  2020 Pacific Rim Meeting on Electrochemical and Solid State Science (PRiME 2020)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] 電気化学的手法を用いたICP-RIE加工n-GaN表面の評価2020
- Author(s)
  武田健太郎，山田真嗣，渡久地政周，加地徹，佐藤威友
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] コンタクトレス光電気化学エッチングによるリセスゲート AlGaN/GaN HEMT の作製2020
- Author(s)
  渡久地政周，三輪和希，堀切文正，福原昇，成田好伸，市川磨，磯野僚多，田中丈士，佐藤威友
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] Photo-Electrochemical Etching and Porosification of III-Nitride Semiconductors2020
- Author(s)
  T. Sato, and M. Toguchi
- Organizer
  2020 Pacific Rim Meeting on Electrochemical and Solid State Science (PRiME 2020)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] GaN の光電気化学(PEC)エッチングが有する可能性③加熱によるエッチング速度の向上2020
- Author(s)
  堀切文正，福原昇，太田博，浅井直美，成田好伸，吉田丈洋，三島友義，渡久地政周，三輪和希，大神洸貴，佐藤威友
- Organizer
  第67回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] Fabrication of Recessed-Gate AlGaN/GaN HEMTs Utilizing Contactless Photo-Electrochemical (CLPEC) Etching2020
- Author(s)
  M. Toguchi, K. Miwa, F. Horikiri, N. Fukuhara, Y. Narita, O. Ichikawa, R. Isono, T. Tanaka, and T. Sato
- Organizer
  2020 Pacific Rim Meeting on Electrochemical and Solid State Science (PRiME 2020)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-20H02175
[Presentation] Low-damage wet etching for AlGaN/GaN recessed-gate HEMTs using photo-electrochemical reactions2019
- Author(s)
  K. Uemura, Y. Komatsu, and T. Sato
- Organizer
  11th International Symposium on Advanced Plasma Science and its Applications for Nitride and Nanomaterials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] GaNの光電気化学（PEC）エッチングが有する可能性②コンタクトレスでのエッチング2019
- Author(s)
  堀切文正，福原昇，太田博，浅井直美，成田好伸，吉田丈洋，三島友義，渡久地政周，三輪和希，佐藤威友
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] III-V族化合物半導体のウェットエッチング～窒化物半導体に関する最近の話題を中心に～2019
- Author(s)
  佐藤威友，渡久地政周
- Organizer
  第80回応用物理学会秋季学術講演会
- Invited
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] GaN Wet Etching Process2019
- Author(s)
  F. Horikiri, N. Fukuhara, H. Ohta, N. Asai, Y. Narita, T. Yoshida, T. Mishima, M. Toguchi, K. Miwa, and T. Sato
- Organizer
  13th Topical Workshop on Heterostructure Microelectronics
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] Precise Control in Threshold Voltage of AlGaN/GaN HEMTs by Photoelectrochemical Etching2019
- Author(s)
  Y. Komatsu, M. Toguchi, and T. Sato
- Organizer
  Materials Research Meeting 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] 高濃度n型GaN基板に対する光電気化学(PEC)エッチングの調査2019
- Author(s)
  三輪和希，渡久地政周，佐藤威友
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] Damage-less Wet Etching for Normally-off AlGaN/GaN HEMTs using Photo-electrochemical Reactions2019
- Author(s)
  T. Sato, K. Uemura, and M. Toguchi
- Organizer
  2019 International Conference on Compound Semiconductor Manufacturing Technology
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] 電気化学インピーダンス法を用いたn-GaN加工表面の評価 (2)2019
- Author(s)
  武田健太郎，渡久地政周，佐藤威友
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] AlGaInN/AlGaNヘテロ構造の光電気化学エッチング(2)2019
- Author(s)
  小松祐斗，渡久地政周，斉藤早紀，三好実人，佐藤威友
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] GaN Wet Etching Process for Power and RF Devices2019
- Author(s)
  F. Horikiri, N. Fukuhara, H. Ohta, N. Asai, Y. Narita, T. Yoshida, T. Mishima, M. Toguchi, K. Miwa, and T. Sato
- Organizer
  2019 International Conference on Solid State Devices and Materials
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Contactless Photoelectrochemical Etching of n-GaN in K2S2O8 solution2019
- Author(s)
  M. Toguchi, K. Miwa, F. Horikiri, N. Fukuhara, Y. Narita, T. Yoshida, and T. Sato
- Organizer
  Materials Research Meeting 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] K2S2O8/H3PO4 混合溶液を用いた n-GaN のコンタクトレスエッチング2019
- Author(s)
  渡久地政周，三輪和希，堀切文正，福原昇，成田好伸，吉田丈洋，佐藤威友
- Organizer
  第80回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] GaN Wet Etching Process for Power and RF Devices2019
- Author(s)
  F. Horikiri, N. Fukuhara, H. Ohta, N. Asai, Y. Narita, T. Yoshida, T. Mishima, M. Toguchi, K. Miwa, and T. Sato
- Organizer
  2019 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] AlGaInN/AlGaNヘテロ構造の光電気化学エッチング2019
- Author(s)
  小松祐斗、植村圭佑、佐藤威友
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] Damage-less Wet Etching for Normally-off AlGaN/GaN HEMTs using Photo-electrochemical Reactions2019
- Author(s)
  T. Sato, K. Uemura, and M. Toguchi
- Organizer
  2019 International Conference on Compound Semiconductor Manufacturing Technology
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Photo-electrochemical etching optimized for high-doped n-type GaN2019
- Author(s)
  K. Miwa, M. Toguchi, T. Sato
- Organizer
  13th Topical Workshop on Heterostructure Microelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] ペルオキソ二硫酸イオン(S2O82-)含有電解液におけるGaNの電気化学特性2019
- Author(s)
  渡久地政周, 三輪和希, 堀切文正, 福原昇, 成田好伸, 吉田丈洋, 佐藤威友
- Organizer
  第66回応用物理学会春季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] Evaluation of Radical Production Rate from S2O82- ions for GaN Etching2019
- Author(s)
  M. Toguchi, K. Miwa, F. Horikiri, N. Fukuhara, Y. Narita, T. Yoshida, and T. Sato
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] Simple Photoelectrochemical Etching of GaN for RF Application2019
- Author(s)
  F. Horikiri, N. Fukuhara, Y. Narita, T. Yoshida, M. Toguchi, K. Miwa, and T. Sato
- Organizer
  Materials Research Meeting 2019
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] GaN Wet Etching Process for Power and RF Devices2019
- Author(s)
  F. Horikiri, N. Fukuhara, H. Ohta, N. Asai, Y. Narita, T. Yoshida, T. Mishima, M. Toguchi, K. Miwa, and T. Sato
- Organizer
  2019 International Conference on Solid State Devices and Materials
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] Interface control of Al2O3-based MOS structures for advanced GaN transistors2019
- Author(s)
  T. Hashizume and T. Sato
- Organizer
  13th International Conference on Nitride Semiconductors (ICNS-13)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Characterization of processing-damage induced on n-GaN surface utilizing electrochemical methods2019
- Author(s)
  K. Takeda, M. Toguchi, T. Sato
- Organizer
  13th Topical Workshop on Heterostructure Microelectronics
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] Precise control in recessed-gate etching for AlGaN/GaN HEMTs by utilizing photo- electrochemical reactions2019
- Author(s)
  Y. Komatsu, M. Toguchi, and T. Sato
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] Simple Photoelectrochemical Etching for GaN HEMT Application2019
- Author(s)
  F. Horikiri, N. Fukuhara, Y. Narita, T. Yoshida, M. Toguchi, K. Miwa, and T. Sato
- Organizer
  The 9th Asia-Pacific Workshop on Widegap Semiconductors
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] Electrochemical characterization of etching damage induced to n-GaN surface2019
- Author(s)
  K. Takeda, M. Toguchi, and T. Sato
- Organizer
  11th International Symposium on Advanced Plasma Science and its Applications for Nitride and Nanomaterials
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] AlGaN/GaNへテロ構造トランジスタを基盤とする高感度化学センサの検討2018
- Author(s)
  小松祐斗、植村圭佑、渡久地政周、佐藤威友
- Organizer
  2018 年電気化学秋季大会
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] Precisely-controlled etching of gallium nitride utilizing electrochemical reactions2018
- Author(s)
  T. Sato and M. Toguchi
- Organizer
  Nanotech Malaysia 2018
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] 電気化学インピーダンス法を用いたn-GaN加工表面の評価2018
- Author(s)
  武田健太郎, 渡久地政周,佐藤威友
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] Recessed-gate AlGaN/GaN High Electron Mobility Transistors (HEMTs) Prepared by Photo-electrochemical Etching and Post-metallization Annealing2018
- Author(s)
  K. Uemura, M. Deki, Y. Honda, H. Amano, and T. Sato
- Organizer
  第79回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] Effect of Photo-electrochemical Etching and Post-metallization Annealing on Gate-controllability of AlGaN/GaN High Electron Mobility Transistors2018
- Author(s)
  K. Uemura, M. Deki, Y. Honda, H. Amano, and T. Sato
- Organizer
  International Workshop on Nitride Semiconductors 2018 (IWN2018)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] 窒化ガリウム加工基板に対する選択的光電気化学エッチングの検討”2018
- Author(s)
  渡久地政周, 武田健太郎, 佐藤威友
- Organizer
  2018 年電気化学秋季大会
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] Control of Pore Depth in GaN Porous Structures Utilizing a Photoabsorption Process Under below-Bandgap Illumination2018
- Author(s)
  M. Toguchi, S. Matsumoto, and T. Sato
- Organizer
  233rd ECS Meeting
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] Low-damage Etching for GaN-based Electronic Devices utilizing Photo-electrochemical Reactions2018
- Author(s)
  T. Sato
- Organizer
  4th Intensive Discussion on Growht of Nitride Semiconductors
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] Electrochemical Formation and Application of Porous Gallium Nitride2018
- Author(s)
  T. Sato and M. Toguchi
- Organizer
  Americas International Meeting on Electrochemistry and Solid State Science (AiMES 2018)
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] 電気化学堆積法によるCu2O/InPヘテロ界面の形成(3)2017
- Author(s)
  近江沙也夏、熊崎祐介、佐藤威友
- Organizer
  第64回応用物理学会春期学術講演会
- Place of Presentation
  パシフィコ横浜，横浜市
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] 光電気化学(PEC)反応を利用したリセスゲートAlGaN/GaN HEMTの作製2017
- Author(s)
  植村圭佑、佐藤威友、橋詰保
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] 表面加工を施した窒化ガリウムの特異的光吸収特性と光電気化学エッチングの制御2017
- Author(s)
  渡久地政周，松本悟，佐藤威友
- Organizer
  2018年電気化学会第85回大会
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] Removal of reactive-ion-etching damage from n-GaN surface using a photoelectrochemical process2017
- Author(s)
  S. Matsumoto, M. Toguchi, and T. Sato
- Organizer
  2017 International Conference on Solid State Devices and Materials (SSDM 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] 光電気化学(PEC)反応を利用したリセスゲートAlGaN/GaN HEMTの作製2017
- Author(s)
  植村圭佑、佐藤威友、橋詰保
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Highly-controllable etching for AlGaN/GaN recessed-gate structures utilizing low-damage electrochemical reactions2017
- Author(s)
  K. Uemura, Y. Kumazaki, T. Sato, and T. Hashizume
- Organizer
  12th Topical Workshop on Heterostructure Microelectronics (TWHM 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] Photo-electrochemical Formation of Porous Nanostructures on n-type GaN utilizing Franz-Keldysh Effect2017
- Author(s)
  M. Toguchi, S. Matsumoto, and T. Sato
- Organizer
  The 8th International Symposium on Surface Science (ISSS8)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] GaN多孔質構造の形状およびキャリア濃度の違いとインピーダンス特性について2017
- Author(s)
  伊藤圭亮、張笑逸、熊崎祐介、佐藤威友
- Organizer
  第64回応用物理学会春期学術講演会
- Place of Presentation
  パシフィコ横浜，横浜市
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] 光電気化学反応を利用したn-GaN表面層の低損傷エッチング2017
- Author(s)
  松本悟，佐藤威友，成田哲生，加地徹，橋詰保
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] 光電気化学反応を利用したn-GaN表面ダメージ層の除去2017
- Author(s)
  松本悟、枝元将彰、熊崎祐介、佐藤威友
- Organizer
  第64回応用物理学会春期学術講演会
- Place of Presentation
  パシフィコ横浜，横浜市
- Year and Date
  2017-03-14
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] Precise thickness control in recess-etching for normally-off AlGaN/GaN HEMTs using a low damage photo-electrochemical reaction2017
- Author(s)
  Taketomo Sato, Keisuke Uemura, Yusuke Kumazaki, Tamotsu Hashizume
- Organizer
  12th International Conference on Nitride Semiconductors (ICNS-12)
- Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Franz-Keldysh効果を用いた窒化ガリウムの光電気化学反応制御2017
- Author(s)
  渡久地政周,佐藤威友
- Organizer
  2017年電気化学会秋季大会
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] Precise thickness control in recess-etching for normally-off AlGaN/GaN HEMTs using a low damage photo-electrochemical reaction2017
- Author(s)
  T. Sato, K. Uemura, Y. Kumazaki, and T. Hashizume
- Organizer
  12th International Conference on Nitride Semiconductors (ICNS 12)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] Improved wet-etching processes for GaN-based electron devices2017
- Author(s)
  T. Sato, K. Uemura and T. Hashizume
- Organizer
  2017 Materials Research Society Fall Meeting
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] 光電気化学反応を利用したn-GaN表面層の低損傷エッチング2017
- Author(s)
  松本悟、佐藤威友、成田哲生、加地徹、橋詰保
- Organizer
  第78回応用物理学会秋季学術講演会
- Data Source
  KAKENHI-PLANNED-16H06421
[Presentation] Improved wet-etching processes for GaN-based electron devices2017
- Author(s)
  T. Sato, K. Uemura, and T. Hashizume
- Organizer
  2017 MRS Fall Meeting and Exhibit
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-17H03224
[Presentation] Improved wet-etching processes for GaN-based electron devices2017
- Author(s)
  T. Sato, K. Uemura, and T. Hashizume
- Organizer
  2017 MRS Fall Meeting and Exhibit
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] Removal of reactive-ion-etching damage from n-GaN surface using a photoelectrochemical process2017
- Author(s)
  S. Matsumoto, M. Toguchi, and T. Sato
- Organizer
  2017 International Conference on Solid State Devices and Materials (SSDM 2017)
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] Precise Structural Tuning of Porous GaN Using Two-Step Anisotropic Etching for Optical and Photo-Electric Applications2016
- Author(s)
  Y. Kumazaki, S. Matsumoto, and T. Sato
- Organizer
  2016 Pacific Rim Meeting on Electrochemistry and Solid State Science (PRiME 2016)
- Place of Presentation
  Hawaii Convention Center, Honolulu, USA
- Year and Date
  2016-10-02
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] 電気化学堆積法による Cu2O/InP ヘテロ界面の形成2016
- Author(s)
  近江沙也夏，熊崎祐介，佐藤威友
- Organizer
  第63回応用物理学会春期学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス，東京都目黒区
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] 電気化学堆積法による Cu2O/InP 多孔質構造ヘテロ界面の形成2016
- Author(s)
  近江沙也夏、熊崎祐介、佐藤威友
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ, 新潟市
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] AlGaN/GaNヘテロ構造の光電気化学特性と低損傷加工技術への応用2016
- Author(s)
  熊崎祐介, 植村圭佑, 佐藤威友
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ, 新潟市
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] 金属有機化合物分解法によるGaN表面へのNiO粒子の形成(2)2016
- Author(s)
  喜田弘文、伊藤圭亮、熊崎祐介、佐藤威友、渡久地政周
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ, 新潟市
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] 異方性ウェットエッチングによるGaN多孔質構造の作製と光学特性評価2016
- Author(s)
  熊崎祐介，松本悟，佐藤威友
- Organizer
  第63回応用物理学会春期学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス，東京都目黒区
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Electrochemical Formation and Characterization of Cu2O Films on n-type InP Porous Structures2016
- Author(s)
  S. Omi, Y. Kumazaki, and T. Sato
- Organizer
  2016 Pacific Rim Meeting on Electrochemistry and Solid State Science (PRiME 2016)
- Place of Presentation
  Hawaii Convention Center, Honolulu, USA
- Year and Date
  2016-10-02
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] GaN多孔質構造の選択領域形成に関する検討2016
- Author(s)
  松本悟、熊崎祐介、佐藤威友
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ, 新潟市
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] 金属有機化合物分解法によるGaN表面へのNiO粒子の形成2016
- Author(s)
  喜田弘文，伊藤圭亮，熊崎祐介，佐藤威友
- Organizer
  第63回応用物理学会春期学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス，東京都目黒区
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] 電気化学インピーダンス分光法によるGaN多孔質構造の評価2016
- Author(s)
  伊藤圭亮、張笑逸、喜田弘文、熊崎祐介、佐藤威友
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ, 新潟市
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] Electrochemical characterization of GaN porous structures for photochemical sensor application2016
- Author(s)
  Xiaoyi Zhang、Keisuke Ito、Hirofumi Kida、Yusuke Kumazaki、Taketomo Sato
- Organizer
  第77回応用物理学会秋季学術講演会
- Place of Presentation
  朱鷺メッセ, 新潟市
- Year and Date
  2016-09-13
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] Electrochemical formation of N-type GaN and N-type InP porous structures for chemical sensor applications2016
- Author(s)
  T. Sato, X. Zhang, K. Ito, S. Matsumoto and Y. Kumazaki
- Organizer
  IEEE SENSORS 2016
- Place of Presentation
  Caribe Royale All-Suite Hotel and Convention Center, Orlando, USA
- Year and Date
  2016-10-30
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] AlGaN/GaNヘテロ構造の光電気化学特性と低損傷加工技術への応用2016
- Author(s)
  熊崎祐介, 植村圭佑,佐藤威友
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  京都大学, 京都市
- Year and Date
  2016-12-12
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] Fabrication of GaN Porous Structures Using Photo-Electrochemical Etching and Electrode Response2016
- Author(s)
  張笑逸、伊藤圭亮、喜田弘文、熊崎祐介、佐藤威友
- Organizer
  第63回応用物理学会春期学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス，東京都目黒区
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 光電気化学反応を利用したGaN表面の陽極酸化2016
- Author(s)
  枝元将彰，熊崎祐介，佐藤威友
- Organizer
  第63回応用物理学会春期学術講演会
- Place of Presentation
  東京工業大学大岡山キャンパス，東京都目黒区
- Year and Date
  2016-03-19
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] nterface control technologies for high-power GaN transistors: Self-stopping etching of p-GaN layers utilizing electrochemical reactions2016
- Author(s)
  T. Sato, Y. Kumazaki, M. Edamoto, M. Akazawa and T. Hashizume
- Organizer
  SPIE Photonics West 2016
- Place of Presentation
  The Moscone Center, San Francisco, USA
- Year and Date
  2016-02-13
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Photoelectrochemical characterization of n-type GaN porous structures for use in photocatalytic water-splitting system2015
- Author(s)
  H. Kida, Y. Kumazaki, Z. Yatabe and T. Sato
- Organizer
  11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015)
- Place of Presentation
  Hida Hotel Plaza, Takayama
- Year and Date
  2015-08-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] 裏面光照射電気化学法によるGaN陽極酸化表面の分析2015
- Author(s)
  枝元将彰, 熊崎祐介, 谷田部然治, 佐藤威友
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場，名古屋市
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Cu2O/GaNヘテロ構造の電気化学形成と光学的特性評価2015
- Author(s)
  熊崎祐介, 近江沙也夏, 谷田部然治, 佐藤威友
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場，名古屋市
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] Formation of Self-aligned Pore Arrays on n-GaN Substrates by Photo-assisted Electrochemical Etching Process2015
- Author(s)
  Y. Kumazaki, T. Sato and Z. Yatabe
- Organizer
  2015 International Conference on Solid State Devices and Materials (SSDM 2015)
- Place of Presentation
  Sapporo Convention Center, Sapporo
- Year and Date
  2015-09-27
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 電気化学的手法によるGaN多孔質構造の形成と紫外光応答特性2015
- Author(s)
  喜田弘文, 熊崎祐介, 谷田部然治, 佐藤威友
- Organizer
  電子情報通信学会電子デバイス研究会/電気学会フィジカルセンサ/バイオ・マイクロシステム合同研究会
- Place of Presentation
  機会振興会館, 東京都芝区
- Year and Date
  2015-08-03
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] Effect of High Electric Field on Photoabsorption Properties of GaN Porous Structures2015
- Author(s)
  T. Sato, Y. Kumazaki and Z. Yatabe
- Organizer
  11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015)
- Place of Presentation
  Hida Hotel Plaza, Takayama
- Year and Date
  2015-08-23
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 電気化学的手法によるGaN多孔質構造の形成と紫外光応答特性2015
- Author(s)
  喜田弘文, 熊崎祐介, 谷田部然治, 佐藤威友
- Organizer
  電子情報通信学会電子デバイス研究会/電気学会フィジカルセンサ/バイオ・マイクロシステム合同研究会
- Place of Presentation
  機会振興会館, 東京都芝区
- Year and Date
  2015-08-03
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Electrochemical formation of GaN porous structures for photocatalytic applications2015
- Author(s)
  T. Sato, Y. Kumazaki and Z. Yatabe
- Organizer
  11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015)
- Place of Presentation
  Hida Hotel Plaza, Takayama
- Year and Date
  2015-08-23
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] 分光電気化学法によるGaN/電解液界面の評価とナノ構造形成への応用2015
- Author(s)
  熊崎祐介, 渡部晃生, 谷田部然治, 佐藤威友
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  豊橋技術科学大学, 豊橋市
- Year and Date
  2015-05-28
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Electrochemical Formation of Cu2O Films on n-type InP and n-type GaN Substrates2015
- Author(s)
  S. Omi, Y. Kumazaki, Z. Yatabe and T. Sato
- Organizer
  11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015)
- Place of Presentation
  Hida Hotel Plaza, Takayama
- Year and Date
  2015-08-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] Size-controlled formation of high-aspect ratio porous nanostructures on GaN substrates utilizing photo-assisted electrochemical etching for photovoltaic applications2015
- Author(s)
  Y. Kumazaki, Z. Yatabe and T. Sato
- Organizer
  2015 MRS Fall Meeting & Exhibit
- Place of Presentation
  Hynes Convention Center, Boston, USA
- Year and Date
  2015-11-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] Effect of High Electric Field on Photoabsorption Properties of GaN Porous Structures2015
- Author(s)
  T. Sato, Y. Kumazaki, Z. Yatabe
- Organizer
  228th ECS meeting
- Place of Presentation
  Hyatt Regency Phoenix and Phoenix Convention Center, Phoenix, USA
- Year and Date
  2015-10-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] Influence of dry etching on Al2O3/AlGaN/GaN MOS interface properties2015
- Author(s)
  Z. Yatabe, J. Ohira, T. Sato and T. Hashizume
- Organizer
  11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015)
- Place of Presentation
  Hida Hotel Plaza, Takayama
- Year and Date
  2015-08-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Photoelectric energy conversion in GaN porous nanostructures formed by electrochemical process2015
- Author(s)
  T. Sato, Y. Kumazaki and T. Hashizume
- Organizer
  Energy, Materials and Nanotechnology: The Collaborative Conference on Crystal Growth 2015 (EMN-3CG 2015)
- Place of Presentation
  Eaton Hotel, Hong Kong, China
- Year and Date
  2015-12-09
- Invited / Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] Effect of High Electric Field on Photoabsorption Properties of GaN Porous Structures2015
- Author(s)
  T. Sato, Y. Kumazaki, Z. Yatabe
- Organizer
  228th ECS meeting
- Place of Presentation
  Hyatt Regency Phoenix and Phoenix Convention Center, Phoenix, USA
- Year and Date
  2015-10-11
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 光触媒水分解システムを用いたn-GaN多孔質構造の光電気化学的評価2015
- Author(s)
  喜田弘文, 熊崎祐介, 谷田部然治, 佐藤威友
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場，名古屋市
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] Size-controlled formation of high-aspect ratio porous nanostructures on GaN substrates utilizing photo-assisted electrochemical etching for photovoltaic applications2015
- Author(s)
  Y. Kumazaki, Z. Yatabe and T. Sato
- Organizer
  2015 MRS Fall Meeting & Exhibit
- Place of Presentation
  Hynes Convention Center, Boston, USA
- Year and Date
  2015-11-29
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 電気化学堆積法によるCu2O/InPヘテロ構造の形成と特性評価2015
- Author(s)
  近江沙也夏, 熊崎祐介, 谷田部然治, 佐藤威友
- Organizer
  第76回応用物理学会秋季学術講演会
- Place of Presentation
  名古屋国際会議場，名古屋市
- Year and Date
  2015-09-13
- Data Source
  KAKENHI-PROJECT-15K13937
[Presentation] High-selective etching of p-GaN layers on AlGaN/GaN heterostructures by electrochemical process2015
- Author(s)
  M. Edamoto, Y. Kumazaki, Z. Yatabe, T. Sato and T. Hashizume
- Organizer
  11th Topical Workshop on Heterostructure Microelectronics (TWHM 2015)
- Place of Presentation
  Hida Hotel Plaza, Takayama
- Year and Date
  2015-08-23
- Int'l Joint Research
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 界面・バルク電子準位がGaNトランジスタの動作特性に与える影響2014
- Author(s)
  橋詰保, 西口賢弥, 谷田部然治, 佐藤威友
- Organizer
  第1回先進パワー半導体分科会研究会「ワイドギャップ半導体パワーデバイスの信頼性」
- Place of Presentation
  東京工業大学（東京都目黒区）
- Year and Date
  2014-07-30
- Invited
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 窒化物半導体異種接合の評価と制御2014
- Author(s)
  佐藤威友, 赤澤正道, 橋詰保
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学（神奈川県相模原市）
- Invited
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] AlGaN/GaN ヘテロ構造上に形成したp-GaN層の選択的電気化学エッチング2014
- Author(s)
  熊崎祐介, 佐藤威友, 橋詰保
- Organizer
  第61回応用物理学会春季学術講演会
- Place of Presentation
  青山学院大学（神奈川県相模原市）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 電気化学的手法によるIII-V族半導体多孔質構造の形成と高感度化学センサへの応用2014
- Author(s)
  佐藤威友, 渡部晃生，熊崎祐介
- Organizer
  公益社団法人電気化学会第81回大会
- Place of Presentation
  関西大学（大阪府吹田市）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] III-V族化合物半導体多孔質構造の形成と機能素子への応用2014
- Author(s)
  佐藤威友，熊崎祐介, 渡部晃生
- Organizer
  表面技術協会第129回講演大会
- Place of Presentation
  東京理科大学（千葉県野田市）
- Invited
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Structural and Optical Characterization of GaN Porous Structures Formed by Photo-assisted Electrochemical Process2013
- Author(s)
  Y. Kumazaki, A. Watanabe, Z. Yatabe and T. Sato
- Organizer
  224th ECS meeting
- Place of Presentation
  Hilton Hotel（San Francisco, USA）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Photoabsorption and Photoelectric Conversion Properties of InP Porous Structures Formed by Electrochemical Process2013
- Author(s)
  T. Sato, Y. Kumazaki, R. Jinbo and Z. Yatabe
- Organizer
  224th ECS meeting
- Place of Presentation
  Hilton Hotel（San Francisco, USA）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 電気化学的手法によるGaN多孔質構造の形成と光電極特性2013
- Author(s)
  熊崎祐介, 渡部晃生, 谷田部然治, 佐藤威友
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  大阪大学（大阪府吹田市）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] GaN多孔質ナノ構造の表面形状と光電気化学特性2013
- Author(s)
  熊崎祐介, 渡部晃生, 谷田部然治, 佐藤威友
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学（京都府京田辺市）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 電気化学的手法と裏面光照射法によるGaN多孔質ナノ構造の形成2013
- Author(s)
  渡部晃生, 熊崎祐介, 谷田部然治, 佐藤威友
- Organizer
  第74回応用物理学会秋季学術講演会
- Place of Presentation
  同志社大学（京都府京田辺市）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 電気化学的手法によるGaN多孔質構造の形成と光学特性の評価2013
- Author(s)
  熊崎祐介，渡部晃生, 谷田部然治, 神保亮平, 佐藤威友
- Organizer
  平成２５年春期応用物理学会学術講演会
- Place of Presentation
  神奈川工科大学（神奈川県厚木市）
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] InP多孔質構造孔壁表面の機能化による光電変換素子への応用2013
- Author(s)
  神保亮平，渡部晃生, 佐藤威友
- Organizer
  第48回応用物理学会北海道支部/第９回日本光学会北海道地区合同学術講演会
- Place of Presentation
  釧路市生涯学習センター（北海道釧路市）
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] Electrochemical Formation and Optical Characterization of GaN Porous Structures2013
- Author(s)
  Y. Kumazaki, A. Watanabe, R. Jinbo, Z. Yatabe and T. Sato
- Organizer
  The 40th International Symposium on Compound Semiconductors (ISCS2013)
- Place of Presentation
  神戸コンベンションセンター（神戸市、兵庫県）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] GaN多孔質構造の形状制御と化学センサへの応用2013
- Author(s)
  渡部晃生, 熊崎祐介, 谷田部然治, 佐藤威友
- Organizer
  第49回応用物理学会北海道支部学術講演会
- Place of Presentation
  北海道大学（北海道札幌市）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Selective etching of p-GaN layers for normally-off AlGaN/GaN HEMTs by electrochemical process2013
- Author(s)
  3. Y. Kumazaki, N. Azumaishi, H. Ueda, M. Kanechika, H. Tomita, T. Sato and T. Hashizume
- Organizer
  10th International Conference on Nitride Semiconductors (ICNS-10)
- Place of Presentation
  Gaylord National Hotel and Convention Center Washington (Washington DC, USA)
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 電気化学的手法によるInP多孔質構造の光吸収特性と光電変換2013
- Author(s)
  熊崎祐介, 神保亮平, 谷田部然治, 佐藤威友
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  静岡大学（静岡県浜松市）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Electrochemical Formation and Optical Characterization of GaN Porous Structures2013
- Author(s)
  Y. Kumazaki, A. Watanabe, R. Jinbo, Z. Yatabe and T. Sato
- Organizer
  32nd Electronic Materials Symposium (EMS32)
- Place of Presentation
  ラフォーレ修善寺（滋賀県守山市）
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Photoelectric-conversion Devices Based on InP Porous Structure2012
- Author(s)
  T. Sato, R. Jinbo and Z. Yatabe
- Organizer
  2012 Pacific Rim Meeting on Electrochemical and Solid-State Science
- Place of Presentation
  ハワイコンベンションセンター（ホノルル、米国）
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] pn接合基板上に形成したInP多孔質構造の光学特性評価2012
- Author(s)
  工藤智人, 佐藤威友
- Organizer
  第47回応用物理学会北海道支部/第8回日本光学会北海道地区合同学術講演会
- Place of Presentation
  北海道大学(札幌市)
- Year and Date
  2012-01-07
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] Optical Absorption Properties of InP Porous Structures Formed by Electrochemical Process2012
- Author(s)
  Y. Kumazaki, T. Kudo, Z. Yatabe, T.Sato
- Organizer
  2012International Conference on Solid StateDevices and Materials
- Place of Presentation
  国立京都国際会館(京都府左京区)
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] High-sensitive ISFETs Based on Semiconductor Porous Nanostructures2012
- Author(s)
  T. Sato
- Organizer
  BIT's 3rd Annual World Congress of NanoMedicine-2012
- Place of Presentation
  深センコンベンションセンター(中国)
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] Optical Absorption Properties of InP Porous Structures Formed by Electrochemical Process2012
- Author(s)
  Y. Kumazaki, T. Kudo, Y. Yatabe and T. Sato
- Organizer
  2012 International Conference on Solid State Devices and Materials
- Place of Presentation
  国立京都国際会館（京都市左京区）
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] Characterization and control of dry-etched AlGaN surfaces2012
- Author(s)
  Z.Yatabe, Y.Hori, T.Sato, T.Hashizume
- Organizer
  2012 RCIQE International Workshop for Green Electronics
- Place of Presentation
  北海道大学(札幌市)
- Year and Date
  2012-03-05
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] Photo-electrical response of InP porous structures and their application to photo-electric conversion devices2012
- Author(s)
  R.Jinbo, T.Kudo, Y.Imai, Z.Yatabe, T.Sato
- Organizer
  2012 RCIQE International Workshop for Green Electronics
- Place of Presentation
  北海道大学(札幌市)
- Year and Date
  2012-03-05
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] High-sensitive ISFETs Based on Semiconductor Porous Nanostructures2012
- Author(s)
  T. Sato
- Organizer
  BIT’s 3rd Annual World Congress of NanoMedicine-2012
- Place of Presentation
  深センコンベンションセンター（深セン、中国）
- Invited
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] 電気化学的手法によるInP多孔質構造の形成と孔の位置制御2012
- Author(s)
  神保亮平, 谷田部然治, 佐藤威友
- Organizer
  平成24年春期応用物理学会学術講演会
- Place of Presentation
  早稲田大学(東京都)
- Year and Date
  2012-03-18
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] ポリスチレン微小球の自己組織化配列とリソグラフィ技術を利用した半導体加工基板の作製2012
- Author(s)
  神保亮平，今井雄大、谷田部然治、佐藤威友
- Organizer
  平成２４年秋期第７３回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学（愛媛県松山市）
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] pn接合基板上に形成したInP多孔質構造の光学応答特性の評価2012
- Author(s)
  熊崎祐介，工藤智人，谷田部然治, 佐藤威友
- Organizer
  平成２４年秋期第７３回応用物理学会学術講演会
- Place of Presentation
  愛媛大学・松山大学（愛媛県松山市）
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] ポリスチレン微小球の自己組織化配列とリソグラフィ技術を利用した多孔質構造の形成と位置制御2012
- Author(s)
  今井雄大, 神保亮平, 谷田部然治, 佐藤威友
- Organizer
  第47回応用物理学会北海道支部/第8回日本光学会北海道地区合同学術講演会
- Place of Presentation
  北海道大学(札幌市)
- Year and Date
  2012-01-06
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] Photo-electrical response of InP porous structures formed on pn substrates2011
- Author(s)
  T.Kudo, T.Sato
- Organizer
  International Symposium on Surface Science
- Place of Presentation
  タワーホール船堀(東京都)
- Year and Date
  2011-12-14
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] ドライエッチしたGaNおよびAlGaN表面の評価と制御2011
- Author(s)
  谷田部然治, 東石直樹, 佐藤威友, 橋詰保
- Organizer
  平成23年秋期第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形市)
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] Photo-electrical response of InP porous structures formed on pn substrates2011
- Author(s)
  T. Kudo, T. Sato
- Organizer
  2011 International Symposium on Surface Science
- Place of Presentation
  タワーホール船橋(東京都江戸川区)
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] ポリスチレン微小球の自己組織化配列とリソグラフィ技術を利用した多孔質構造の形成2011
- Author(s)
  今井雄大, 神保亮平, 谷田部然治, 佐藤威友
- Organizer
  平成23年秋期第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形市)
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] Photoelectric Conversion Devices based on InP Porous Structures2011
- Author(s)
  R.Jinbo, T.Kudo, T.Sato
- Organizer
  2011 International Conference on Solid State Devices and Materials
- Place of Presentation
  愛知県産業労働センター(名古屋市)
- Year and Date
  2011-09-29
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] 電気化学的手法を用いたInP多孔質構造の形成と光電変換素子への応用2011
- Author(s)
  神保亮平, 岡崎拓行, 佐藤威友
- Organizer
  平成23年秋期第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形市)
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] Characterization and control of dry-etched GaN surfaces2011
- Author(s)
  Z.Yatabe, S.-S.Kim, N.Azumaishi, T.Sato, T.Hashizume
- Organizer
  6th Interbnnational Symposium on Surface Science (ISSS-6)
- Place of Presentation
  タワーホール船堀(東京)
- Data Source
  KAKENHI-PROJECT-21246007
[Presentation] pn接合基板上に形成した畑多孔質構造の光応答特性2011
- Author(s)
  工藤智人, 岡崎拓行, 佐藤威友
- Organizer
  第46回応用物理学会北海道支部/第7回日本光学会北海道地区合同学術講演会
- Place of Presentation
  室蘭工業大学、室蘭市
- Year and Date
  2011-01-08
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] ポリスチレン微小球の自己組織化配列とリソグラフィ技術を利用した半導体パターニング技術2011
- Author(s)
  今井雄大, 岡崎拓行, 佐藤威友
- Organizer
  平成23年春期応用物理学会学術講演会
- Place of Presentation
  (講演会中止)(発表成立)
- Year and Date
  2011-03-09
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] InP多孔質構造を利用した光電変換素子の検討2011
- Author(s)
  工藤智人, 岡崎拓行, 佐藤威友
- Organizer
  平成23年春期応用物理学会学術講演会
- Place of Presentation
  (講演会中止)(発表成立)
- Year and Date
  2011-03-09
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] pn接合基板に形成したInP多孔質構造の光応答特性2011
- Author(s)
  工藤智人, 佐藤威友
- Organizer
  平成23年秋期第72回応用物理学会学術講演会
- Place of Presentation
  山形大学(山形市)
- Year and Date
  2011-08-31
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] ポリスチレン微小球の自己組織化配列を利用した半導体マイクロパターニング技術2011
- Author(s)
  今井雄大, 岡崎拓行, 佐藤威友
- Organizer
  第46回応用物理学会北海道支部/第7回日本光学会北海道地区合同学術講演会
- Place of Presentation
  室蘭工業大学(室蘭市)
- Year and Date
  2011-01-08
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] Characterization and control of dry-etched GaN surfaces2011
- Author(s)
  Z.Yatabe, S.Kim, N.Azumaishi, T.Sato, T.Hashizume
- Organizer
  International Spmposium on Surface Science
- Place of Presentation
  タワーホール船堀(東京都)
- Year and Date
  2011-12-12
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] pn接合基板上に形成したInP多孔質構造の光応答特性2011
- Author(s)
  工藤智人, 岡崎拓行, 佐藤威友
- Organizer
  第46回応用物理学会北海道支部/第7回日本光学会北海道地区合同学術講演会
- Place of Presentation
  室蘭工業大学(室蘭市)
- Year and Date
  2011-01-08
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] ポリスチレン微小球の自己組織化配列を利用した半導体マイクロパターニング技術2011
- Author(s)
  今井雄大, 岡崎拓行, 佐藤威友
- Organizer
  第46回応用物理学会北海道支部/第7回日本光学会北海道地区合同学術講演会
- Place of Presentation
  室蘭工業大学、室蘭市
- Year and Date
  2011-01-08
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] 電気化学的手法によるInPポーラス孔壁表面の機能化と電気的特性の評価2011
- Author(s)
  岡崎拓行, 神保亮平, 佐藤威友
- Organizer
  化学系学協会北海道支部2011年冬季研究発表会
- Place of Presentation
  北海道大学(札幌市)
- Year and Date
  2011-02-02
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] 電気化学的手法によるInPポーラス孔壁表面の機能化と電気的特性の評価2011
- Author(s)
  岡崎拓行, 神保亮平, 佐藤威友
- Organizer
  化学系学協会北海道支部2011年冬季研究発表会
- Place of Presentation
  北海道大学、札幌市
- Year and Date
  2011-02-02
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] 電気化学的手法を用いて形成したInPポーラス構造の電気的特性2010
- Author(s)
  岡崎拓行, 吉澤直樹, 佐藤威友, 橋詰保
- Organizer
  平成22年春期応用物理学関係連合講演会
- Place of Presentation
  東海大学、神奈川県平塚市
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] InP多孔質構造の光吸収特性と光電変換2010
- Author(s)
  佐藤威友, 岡崎拓行
- Organizer
  平成22年秋期応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎市)
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] Electrochemical formation of InP porous structures for their application to photoelectric conversion devices2010
- Author(s)
  H.Okazaki, T.Sato, T.Has hizume
- Organizer
  2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)
- Place of Presentation
  東京工業大学、東京都目黒区
- Year and Date
  2010-06-30
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] High-Sensitive ISFETs based on InP Porous Structures2010
- Author(s)
  T.Sato, N.Yoshizawa
- Organizer
  The 61^<st> Annual Meeting of the International Soci ety of Electrochemistry (ISE)
- Place of Presentation
  Acropolis会議場、ニース、フランス
- Year and Date
  2010-09-30
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] pn接合基板上に形成したInP多孔質構造の電気的評価2010
- Author(s)
  工藤智人, 岡崎拓行, 佐藤威友
- Organizer
  平成22年秋期応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎市)
- Year and Date
  2010-09-17
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] Optical and Electrical Properties of InP Porous Structures Formed on p-n Substrates2010
- Author(s)
  T.Sato, A.Mizohata, N.Yoshizawa, T.Hashizume
- Organizer
  2010 International RCIQE/CREST Joint Workshop
- Place of Presentation
  北海道大学、札幌市
- Year and Date
  2010-03-01
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] 電気化学的手法によるInP多孔質構造の形成と孔壁表面の機能化2010
- Author(s)
  岡崎拓行, 佐藤威友
- Organizer
  平成22年秋期応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎市)
- Year and Date
  2010-09-17
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] InP-pn接合基板へのポーラス構造作製と形状および位置の制御2010
- Author(s)
  岡崎拓行, 吉澤直樹, 佐藤威友
- Organizer
  平成22第45回応用物理学会北海道支部/第6回日本光学会北海道支部合同学術講演
- Place of Presentation
  北海道大学、札幌市
- Year and Date
  2010-01-08
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] ポリスチレン微小球の自己組織化配列を利用したマイクロパターニングと半導体微細加工への応用2010
- Author(s)
  今井雄大, 岡崎拓行, 佐藤威友
- Organizer
  平成22年秋期応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎市)
- Year and Date
  2010-09-17
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] Electrochemical formation of InP porous structures for their application to photoelectric conversion devices2010
- Author(s)
  H.Okazaki, T.Sato, T.Hashizume
- Organizer
  2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)
- Place of Presentation
  東京工業大学(東京都)
- Year and Date
  2010-06-30
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] Optical and Electrical Properties of InP Porous Structures Formed on p-n Substrates2010
- Author(s)
  T.Sato, A.Mizohata, N.Yoshizawa, T.Hashizume
- Organizer
  2010 International RCIQE/CREST Joint Workshop
- Place of Presentation
  北海道大学、札幌市
- Year and Date
  2010-03-01
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] InP多孔質構造の光吸収特性と光電変換2010
- Author(s)
  佐藤威友, 岡崎拓行
- Organizer
  平成22年秋期応用物理学会学術講演会
- Place of Presentation
  長崎大学、長崎市
- Year and Date
  2010-09-15
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] InP-pn接合基板へのポーラス構造作製と形状および位置の制御2010
- Author(s)
  岡崎拓行, 吉澤直樹, 佐藤威友
- Organizer
  平成22第45回応用物理学会北海道支部/第6回日本光学会北海道支部合同学術講演
- Place of Presentation
  北海道大学、札幌市
- Year and Date
  2010-01-08
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] pn接合基板上に形成した回多孔質構造の電気的評価2010
- Author(s)
  工藤智人, 岡崎拓行, 佐藤威友
- Organizer
  平成22年秋期応用物理学会学術講演会
- Place of Presentation
  長崎大学、長崎市
- Year and Date
  2010-09-17
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] 多孔質構造を有するイオン感応性電界効果トランジスタ2010
- Author(s)
  佐藤威友, 岡崎拓行
- Organizer
  平成22年秋期応用物理学会学術講演会
- Place of Presentation
  長崎大学、長崎市
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] 電気化学的手法によるInP多孔質構造の形成と孔壁表面の機能化2010
- Author(s)
  岡崎拓行, 佐藤威友
- Organizer
  平成22年秋期応用物理学会学術講演会
- Place of Presentation
  長崎大学、長崎市
- Year and Date
  2010-09-17
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] 電気化学的手法を用いて形成したInPポーラス構造の電気的特性2010
- Author(s)
  岡崎拓行, 吉澤直樹, 佐藤威友, 橋詰保
- Organizer
  平成22年春期応用物理学関係連合講演会
- Place of Presentation
  東海大学、神奈川県平塚市
- Year and Date
  2010-03-19
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] Optical and Electrical Properties of InP Porous Structures Formed on P-N Substrates2010
- Author(s)
  H.Okazaki, T.Sato, N.Yoshizawa, T.Hashizume
- Organizer
  2010 International Conference on Indium Phosphide and Related Materials (IPRM)
- Place of Presentation
  高松シンボルタワー(高松市)
- Year and Date
  2010-06-01
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] Optical and Electrical Properties of InP Porous Structures Formed on P-N Substrates2010
- Author(s)
  H.Okazaki, T.Sato, N.Yoshiza wa, T.Hashaume
- Organizer
  2010 International Conference on Indium Phosphi de and Related Materials (IPRM)
- Place of Presentation
  高松シンボルタワー、高松市
- Year and Date
  2010-06-01
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] InP-pn接合基板へのポーラス構造形成および電気的特性評価2010
- Author(s)
  吉澤直樹, 岡崎拓行, 佐藤威友, 橋詰保
- Organizer
  平成22第45回応用物理学会北海道支部/第6回日本光学会北海道支部合同学術講演-
- Place of Presentation
  北海道大学、札幌市
- Year and Date
  2010-01-08
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] 電気化学的手法によるInP多孔質構造の形成と高感度化学センサへの応用2010
- Author(s)
  佐藤威友, 吉澤直樹, 岡崎拓行, 橋詰保
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  北陸先端科学技術大学院大学(能美市)
- Year and Date
  2010-06-17
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] High-Sensitive ISFETs based on InP Porous Structures2010
- Author(s)
  T. Sato, N. Yoshizawa
- Organizer
  The 61st Annual Meeting of the International Society of Electrochemistry (ISE)
- Place of Presentation
  Acropolisコンベンションセンター(フランス)
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] 電気化学的手法によるInP多孔質構造の形成と高感度化学センサへの応用2010
- Author(s)
  佐藤威友, 吉澤直樹, 岡崎拓行, 橋詰保
- Organizer
  電子情報通信学会電子デバイス研究会
- Place of Presentation
  北陸先端科学技術大学、能美市
- Year and Date
  2010-06-17
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] InP-pn接合基板へのポーラス構造形成および電気的特性評価2010
- Author(s)
  吉澤直樹, 岡崎拓行, 佐藤威友, 橋詰保
- Organizer
  平成22第45回応用物理学会北海道支部/第6回日本光学会北海道支部合同学術講演
- Place of Presentation
  北海道大学、札幌市
- Year and Date
  2010-01-08
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] ポリスチレン微小球の自己組織化配列を利用したマイクロパターニングと半導体微細加工への応用2010
- Author(s)
  今井雄大, 岡崎拓行, 佐藤威友
- Organizer
  平成22年秋期応用物理学会学術講演会
- Place of Presentation
  長崎大学、長崎市
- Year and Date
  2010-09-17
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] 多孔質構造を有するイオン感応性電界効果トランジスタ2010
- Author(s)
  佐藤威友, 岡崎拓行
- Organizer
  平成22年秋期応用物理学会学術講演会
- Place of Presentation
  長崎大学(長崎市)
- Year and Date
  2010-09-14
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] High-Sensitive ISFETs based on InP Porous Structures2010
- Author(s)
  T.Sato, N.Yoshizawa
- Organizer
  The 61st Annual Meeting of the International Society of Electrochemistry (ISE)
- Place of Presentation
  Acropolis Conference Center(フランス)
- Year and Date
  2010-09-30
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] Low Reflectance Surface Observed on InP Porous Structures after Photoelectroche mical Etching2009
- Author(s)
  佐藤威友, 吉澤直樹, 岡崎拓行, 橋詰保
- Organizer
  216th Meeting of the Electrochemical Society
- Place of Presentation
  Austria Center Vienna、ウィーン、オーストリア
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] InP-pn接合基板へのポーラス構造作製と形状制御2009
- Author(s)
  岡崎拓行, 吉澤直樹, 佐藤威友
- Organizer
  平成21年秋期応用物理学会学術講演会
- Place of Presentation
  富山大学、富山県富山市
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] Formation and application of InP porous structures on p-n substrates2009
- Author(s)
  佐藤威友, 吉澤直樹, 岡崎拓行, 橋詰保
- Organizer
  2009 Asia-Pacific Workshop on Fundamentals and Appli cations of Advanced Semiconductor Devices(AWAD)
- Place of Presentation
  Hae-un-dae Grand Hotel、釜山、韓国
- Year and Date
  2009-06-25
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] ポーラス構造を形成したInP-pn接合基板の電気的特性2009
- Author(s)
  吉澤直樹, 岡崎拓行, 佐藤威友, 橋詰保
- Organizer
  平成21年秋期応用物理学会学術講演会
- Place of Presentation
  富山大学、富山県富山市
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] Electrochemical formation and sensor application of InP porousna nostructures2009
- Author(s)
  T. Sato, A. Mizohata, N. Yoshizawa and T. Hashizume
- Organizer
  2009 RCIQE International Seminar on "Advan ced Semiconductor Materials and Devices"
- Place of Presentation
  北海道大学札幌市
- Year and Date
  2009-03-03
- Data Source
  KAKENHI-PROJECT-19760208
[Presentation] Formation and application of InP porous structures on p-n substrates2009
- Author(s)
  T.Sato, N.Yoshizawa, H.Okazaki, T.Hashizume
- Organizer
  2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD)
- Place of Presentation
  Hae-un-dae Grand Hotel、釜山、韓国
- Year and Date
  2009-06-25
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] InP-pn接合基板へのポーラス構造作製と形状制御2009
- Author(s)
  岡崎拓行, 吉澤直樹, 佐藤威友
- Organizer
  平成21年秋期応用物理学会学術講演会
- Place of Presentation
  富山大学、富山県富山市
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] Low Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching2009
- Author(s)
  T. Sato, N. Yoshizawa, H. Okazaki and T.Hashizume
- Organizer
  216th Meeting of the Electrochemical Society (ECS)
- Place of Presentation
  Austria Center Viena(オーストリア)
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] pH Response Characteristics of Liquid-phase Chemical Sensors using InP Onen-aate FETs2009
- Author(s)
  N. Yoshizawa, T. Sato, A. Mizohata and T. Hashizume
- Organizer
  2009 RCIQE International Seminar on "Advanced Semiconductor Materials and Devices"
- Place of Presentation
  北海道大学札幌市
- Year and Date
  2009-03-03
- Data Source
  KAKENHI-PROJECT-19760208
[Presentation] Low Reflectance Surface Observed on InP Porous Structures after Photoelectrochemical Etching2009
- Author(s)
  T.Sato, N.Yoshizawa, H.Okazaki, T.Hashizume
- Organizer
  216th Meeting of the Electrochemical Society
- Place of Presentation
  Austria Center Vienna、ウィーン、オーストリア
- Year and Date
  2009-10-08
- Data Source
  KAKENHI-PROJECT-21656078
[Presentation] ポーラス構造を形成したInP-pn接合基板の電気的特性2009
- Author(s)
  吉澤直樹, 岡崎拓行, 佐藤威友, 橋詰保
- Organizer
  平成21年秋期応用物理学会学術講演会
- Place of Presentation
  富山大学、富山県富山市
- Year and Date
  2009-09-10
- Data Source
  KAKENHI-PROJECT-21686028
[Presentation] Liquid-phase Chemical Sensors using InP-based Open-gate FETs2008
- Author(s)
  N. Yoshizawa, T. Sato, A. Mizohata and T. Hashizume
- Organizer
  THE SEVENTH IEEE CONFERENCE ON S ENSORS(IEEE SENSORS 2008)
- Place of Presentation
  Grand Hotel Tizianoレッチェ、イタリア
- Year and Date
  2008-10-28
- Data Source
  KAKENHI-PROJECT-19760208
[Presentation] pH Sensitivity of Liquid-phase Chemical Sensors using InP Open-gate FETs2008
- Author(s)
  N. Yoshizawa, T. Sato, A. Mizohata and T. Hashizume
- Organizer
  International Symposium on Surface Science and Nanotechnology (ISSS5)
- Place of Presentation
  Tokyo, Japan
- Data Source
  KAKENHI-PROJECT-19760208
[Presentation] pH Sensitivity of Liquid-phase Chemical Sensors using InP Open-eate FETs2008
- Author(s)
  N. Yoshizawa, T. Sato, A. Mizohata and T. Hashizume
- Organizer
  International Symposium on Surface Science and Nanotechnology(ISSS5)
- Place of Presentation
  早稲田大学東京都
- Year and Date
  2008-11-10
- Data Source
  KAKENHI-PROJECT-19760208
[Presentation] 電気化学プロセスによるInPポーラス構造の形成と縦および横方向へのエッチング制御2008
- Author(s)
  佐藤威友、溝畑彰規、吉澤直樹、橋詰保
- Organizer
  平成20年秋期応用物理学会学術講演会
- Place of Presentation
  中部大学愛知県春日井市
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-19760208
[Presentation] InPイオン感応性電界効果トランジスタのpH応答特性2008
- Author(s)
  吉澤直樹、溝畑彰規、佐藤威友、橋詰保
- Organizer
  平成20年秋期応用物理学会学術講演会
- Place of Presentation
  中部大学愛知県春日井市
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-19760208
[Presentation] Complete Removal of Irregular Top Layer forSensor Applications of InP Porous Nanostructures2008
- Author(s)
  T. Sato, A. Mizohata, N. Yoshizawa and T. Hashizume
- Organizer
  214th Meeting of the Electrochemical Society
- Place of Presentation
  Honolulu, Hawaii
- Data Source
  KAKENHI-PROJECT-19760208
[Presentation] 電気化学的手法によるInP表面の機能性修飾と化学センサへの応用2008
- Author(s)
  溝畑彰規、佐藤威友、橋詰保
- Organizer
  第43回応用物理学会北海道支部学術講演会
- Place of Presentation
  札幌市
- Year and Date
  2008-01-10
- Data Source
  KAKENHI-PROJECT-19760208
[Presentation] Electrochemical formation and sensor application of highly-ordered InP nanostructures2008
- Author(s)
  T. Sato, A. Mizohata, N. Yoshizawa T. Hashizume
- Organizer
  2008 RCIQE International seminar on "Advanced Semiconductor Materials and Devices"
- Place of Presentation
  札幌市
- Year and Date
  2008-03-03
- Data Source
  KAKENHI-PROJECT-19760208
[Presentation] InPポーラス構造を基盤とする電流検出型化学センサの作製2008
- Author(s)
  溝畑彰規、吉澤直樹、佐藤威友、橋詰保
- Organizer
  平成20年秋期応用物理学会学術講演会
- Place of Presentation
  中部大学愛知県春日井市
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-19760208
[Presentation] Control of Electronic States at n-GaN Surfaces by Photoelectrochemical Oxidation in Glycol Solution2008
- Author(s)
  Nanako Shiozaki, Taketomo Sato, Tamotsu Hashizume
- Organizer
  2008 International Workshop on Nitride Semiconductors (IWN-2008)
- Place of Presentation
  Montreux, Swizerland
- Data Source
  KAKENHI-PROJECT-19032001
[Presentation] Electrochemical formation and functionalization of InP porous nano structures and their application to chemical sensors2008
- Author(s)
  A. Mizohata, N. Yoshizawa, T.Sato and T. Hashizume
- Organizer
  2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  かでる2・7会議場札幌市
- Year and Date
  2008-07-11
- Data Source
  KAKENHI-PROJECT-19760208
[Presentation] Complete Removal of Irregular Top Layer forSensor Applications of InP Porous Nanostructures2008
- Author(s)
  T. Sato, A. Mizohata, N. Yoshizawa and T. Hashizume
- Organizer
  214th Meeting of the Electrochemical Society
- Place of Presentation
  Hilton Hotelホノルル、米国
- Year and Date
  2008-10-14
- Data Source
  KAKENHI-PROJECT-19760208
[Presentation] Electrochemical formation and functionalization of InP porous nanostructures and their application to chemical sensors2008
- Author(s)
  A. Mizohata, N. Yoshizawa, T.Sato and T. Hashizume
- Organizer
  2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)
- Place of Presentation
  Sapporo, Japan
- Data Source
  KAKENHI-PROJECT-19760208
[Presentation] グリコール水溶液を用いた陽極酸化によるGaN表面の電気的・光学的安定化2008
- Author(s)
  塩崎奈々子、佐藤威友、橋詰保
- Organizer
  平成20年秋期応用物理学会学術講演会
- Place of Presentation
  中部大学愛知県春日井市
- Year and Date
  2008-09-02
- Data Source
  KAKENHI-PROJECT-19760208
[Presentation] Liquid-phase Chemical Sensors using InP-based Open-gate FETs2008
- Author(s)
  N. Yoshizawa, T. Sato, A. Mizohata and T. Hashizume
- Organizer
  THE SEVENTH IEEE CONFERENCE ON SENSORS (IEEE SENSORS 2008)
- Place of Presentation
  Lecce, Italy
- Data Source
  KAKENHI-PROJECT-19760208
[Presentation] Electrochemical formation and sensor application of InP porous nanostructures2007
- Author(s)
  T. Sato, T. Fujino, T. Hashizume
- Organizer
  2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
- Place of Presentation
  慶州,韓国
- Year and Date
  2007-06-27
- Data Source
  KAKENHI-PROJECT-19760208
[Presentation] Electrochemical formation and sensor application of InP porous nanostructures2007
- Author(s)
  T.Sato, T. Fujino, T. Hashizume
- Organizer
  2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)
- Place of Presentation
  Kyongju, Korea
- Data Source
  KAKENHI-PROJECT-19760208
[Presentation] 電気化学的手法によるInPポーラスナノ構造の形成と化学センサへの応用2007
- Author(s)
  佐藤威友、溝畑彰規、橋詰保
- Organizer
  第68回応用物理学会学術講演会(2007年秋期)
- Place of Presentation
  札幌市
- Year and Date
  2007-09-04
- Data Source
  KAKENHI-PROJECT-19760208
[Presentation] Electrochemical formation of InP porous nanostructures and its application to amperometric chemical sensors2007
- Author(s)
  T. Sato, T. Fujino, A. Mizohata, T. Hashizume
- Organizer
  2007 European Materials Research Society (E-MRS) Fall Meeting : Symposium B
- Place of Presentation
  ワルシャワ,ポーランド
- Year and Date
  2007-09-20
- Data Source
  KAKENHI-PROJECT-19760208
[Presentation] Electrochemical formation of InP porous nanostructures and its application to amperometric chemical sensors2007
- Author(s)
  T.Sato, T. Fujino, A. Mizohata, T. Hashizume
- Organizer
  European Materials Research Society Fall Meeting
- Place of Presentation
  Warsaw, Poland
- Data Source
  KAKENHI-PROJECT-19760208
[Presentation] III-V族化合物半導体の電気化学エッチングと微細加工への応用
- Author(s)
  佐藤威友, 熊崎祐介, 渡部晃生，谷田部然治
- Organizer
  第75回応用物理学会秋期学術講演会
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2014-09-17 – 2014-09-20
- Invited
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 電気化学堆積法によるCu2O/GaNヘテロ構造の形成と特性評価
- Author(s)
  熊崎祐介, 近江沙也夏, 谷田部然治, 佐藤威友
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学（神奈川県平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 電気化学エッチングによるGaN多孔質構造の形成
- Author(s)
  渡部晃生, 熊崎祐介, 谷田部然治, 佐藤威友
- Organizer
  第50回応用物理学会北海道支部学術講演会
- Place of Presentation
  旭川市勤労者福祉会館（北海道旭川市）
- Year and Date
  2015-01-09 – 2015-01-10
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Electrochemical Formation of III-V Semiconductor Porous Nanostructures
- Author(s)
  T. Sato, Y. Kumazaki, A. Watanabe, Z. Yatabe
- Organizer
  The 6th IEEE International Nanoelectronics Conference 2014
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2014-07-28 – 2014-07-31
- Invited
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Structural control of GaN porous structures for high-sensitive chemical sensors
- Author(s)
  A. Watanabe, Y. Kumazaki, Z. Yatabe, T. Sato
- Organizer
  The 6th IEEE International Nanoelectronics Conference 2014
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2014-07-28 – 2014-07-31
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Electrochemical Formation of GaN Porous Structures Under UV-Light Irradiation for Photoelectrochemical Application
- Author(s)
  T. Sato, A. Watanabe, Y. Kumazaki, Z. Yatabe
- Organizer
  The 2014 ECS and SMEQ Joint International Meeting
- Place of Presentation
  Moon Palace Resort (Cancun, Mexico)
- Year and Date
  2014-10-05 – 2014-10-09
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Correlation between Structural and Optical Properties of GaN Porous Structures Formed by Photo-assisted Electrochemical Etching
- Author(s)
  Y. Kumazaki, A. Watanabe, Z. Yatabe, T. Sato
- Organizer
  The International Workshop on Nitride Semiconductors 2014
- Place of Presentation
  Wroclaw Congress Center (WROCLAW, POLAND)
- Year and Date
  2014-08-24 – 2014-08-29
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] Structural Properties and Control of GaN Porous Nanostructures Formed by Photo-assisted Electrochemical Process
- Author(s)
  A. Watanabe, Y. Kumazaki, Z. Yatabe and T. Sato
- Organizer
  The 7th International symposium on Surface Science
- Place of Presentation
  くにびきメッセ（島根県松江市）
- Year and Date
  2014-11-02 – 2014-11-06
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] ドライエッチングがAl2O3/AlGaN/GaN MOS界面特性に与える影響
- Author(s)
  谷田部然治, 大平城二, 佐藤威友, 橋詰保
- Organizer
  第62回応用物理学会春季学術講演会
- Place of Presentation
  東海大学（神奈川県平塚市）
- Year and Date
  2015-03-11 – 2015-03-14
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 電気化学エッチングによるGaN多孔質構造の形成と形状制御の向上
- Author(s)
  熊崎祐介, 渡部晃生，谷田部然治, 佐藤威友
- Organizer
  第75回応用物理学会秋期学術講演会
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2014-09-17 – 2014-09-20
- Data Source
  KAKENHI-PROJECT-25289079
[Presentation] 電気化学エッチングを用いた窒化物半導体多孔質構造の形成
- Author(s)
  渡部晃生，熊崎祐介，谷田部然治，佐藤威友
- Organizer
  2014年電気化学会秋期大会
- Place of Presentation
  北海道大学（北海道札幌市）
- Year and Date
  2014-09-27 – 2014-09-28
- Data Source
  KAKENHI-PROJECT-25289079

1. HASHIZUME Tamotsu (80149898)

# of Collaborated Projects: 11 results

# of Collaborated Products: 52 results
2. MOTOHISA Junichi (60212263)

# of Collaborated Projects: 7 results

# of Collaborated Products: 0 results
3. AKAZAWA Masamichi (30212400)

# of Collaborated Projects: 4 results

# of Collaborated Products: 6 results
4. KOGA Hiroaki (80519413)

# of Collaborated Projects: 3 results

# of Collaborated Products: 0 results
5. Miyoshi Makoto (30635199)

# of Collaborated Projects: 3 results

# of Collaborated Products: 3 results
6. KASAI Seiya (30312383)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
7. KANEKO Masamitsu (70374709)

# of Collaborated Projects: 2 results

# of Collaborated Products: 0 results
8. KUBO Toshiharu (10422338)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
9. YATABE Zenji (00621773)

# of Collaborated Projects: 1 results

# of Collaborated Products: 35 results
10. FUKUI Takashi (30240641)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
11. SANO Eiichi (10333650)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
12. YANG Lin (60374708)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
13. 長谷川英機 (60001781)

# of Collaborated Projects: 1 results

# of Collaborated Products: 9 results
14. 賈鋭 (30374606)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
15. 藤倉序章 (70271640)

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
16. 韓哲九

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
17. 安海岩

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results
18. プリミーラモハン

# of Collaborated Projects: 1 results

# of Collaborated Products: 0 results

Sato Taketomo 佐藤 威友

SATO Taketomo 佐藤 威友

Research Projects

Research Products

Co-Researchers

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窒化物半導体異種界面パラレル伝導制御とマルチチャネル高周波トランジスタの開発Principal Investigator

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Development of wet etching technology for nitride semiconductors using strong oxidizing agents and application to transistorsPrincipal Investigator

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Low-damage Processing of Nitride Semiconductors Based on Self-stoping Oxdization and Transistor ApplicationsPrincipal Investigator

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Visible light responsive photocatalysts utilizing nitride semiconductor-based nanostructures for artificial photosynthesisPrincipal Investigator

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Nanoscale control of nitride semiconductor surface using low-damaged process for high-sensitive chemical sensorsPrincipal Investigator

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化合物半導体配列ナノ構造を基盤とする超接合光吸収体の創成と太陽電池応用Principal Investigator

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High-density formation of functionalized nano-interfaces based on semiconductor porous structures for high-sensitive chemical-sensing technologyPrincipal Investigator

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Sato Taketomo 佐藤威友

SATO Taketomo 佐藤威友